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WO2013002601A3 - Memory device using graphene and method for manufacturing same - Google Patents

Memory device using graphene and method for manufacturing same Download PDF

Info

Publication number
WO2013002601A3
WO2013002601A3 PCT/KR2012/005186 KR2012005186W WO2013002601A3 WO 2013002601 A3 WO2013002601 A3 WO 2013002601A3 KR 2012005186 W KR2012005186 W KR 2012005186W WO 2013002601 A3 WO2013002601 A3 WO 2013002601A3
Authority
WO
WIPO (PCT)
Prior art keywords
graphene
memory device
polling
layer
programming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/005186
Other languages
French (fr)
Korean (ko)
Other versions
WO2013002601A2 (en
WO2013002601A9 (en
Inventor
이병훈
황현준
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gwangju Institute of Science and Technology
Original Assignee
Gwangju Institute of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gwangju Institute of Science and Technology filed Critical Gwangju Institute of Science and Technology
Publication of WO2013002601A2 publication Critical patent/WO2013002601A2/en
Publication of WO2013002601A3 publication Critical patent/WO2013002601A3/en
Publication of WO2013002601A9 publication Critical patent/WO2013002601A9/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/689—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/033—Manufacture or treatment of data-storage electrodes comprising ferroelectric layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/035—Manufacture or treatment of data-storage electrodes comprising conductor-insulator-conductor-insulator-semiconductor structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)

Abstract

Provided are a memory device using graphene and a method for manufacturing same. The memory device using graphene comprises: at least one programming electrode arranged so as to intersect with a graphene layer; and a ferroelectric layer interposed between the graphene layer and the programming electrode. Thus, the memory device may have non-volatile properties using a difference in resistances of the graphene layer due to the polarity of a polling voltage applied through the at least one programming electrode. Further, two or more programming electrodes are arranged, and polling voltages of the same polarity or different polarities are applied to each programming electrode, thereby achieving multi-bits. In addition, the method for manufacturing the memory device using graphene involves forming only one ferroelectric layer capable of maintaining polarization through polling, thus enabling an electric field to be continuously applied to the graphene layer contacting the ferroelectric layer.
PCT/KR2012/005186 2011-06-30 2012-06-29 Memory device using graphene and method for manufacturing same Ceased WO2013002601A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20110065159 2011-06-30
KR10-2011-0065159 2011-06-30

Publications (3)

Publication Number Publication Date
WO2013002601A2 WO2013002601A2 (en) 2013-01-03
WO2013002601A3 true WO2013002601A3 (en) 2013-04-11
WO2013002601A9 WO2013002601A9 (en) 2013-06-06

Family

ID=47424702

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005186 Ceased WO2013002601A2 (en) 2011-06-30 2012-06-29 Memory device using graphene and method for manufacturing same

Country Status (2)

Country Link
KR (1) KR20130007483A (en)
WO (1) WO2013002601A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101537492B1 (en) * 2014-12-26 2015-07-16 성균관대학교산학협력단 A method of forming a p-n junction of a two-dimensional structure material using a ferroelectric material and a method of forming a p-n-junction structure using a ferroelectric material
CN106525763B (en) * 2016-11-22 2023-10-10 福州大学 Doped graphene THz-SPR (THz-surface plasmon resonance) based gas sensor system and testing method
KR102637107B1 (en) 2018-09-18 2024-02-15 삼성전자주식회사 Electronic device and method of manufacturing the same
CN115148894A (en) * 2021-03-30 2022-10-04 中国科学院微电子研究所 A kind of Hall sensor and its preparation method and test method
KR102702223B1 (en) * 2021-10-27 2024-09-04 서울대학교산학협력단 Manufacturing method of thin film by using surface functionalized graphene and thin film manufactured by using the same
KR102824779B1 (en) * 2022-11-08 2025-06-24 성균관대학교산학협력단 Junction structure element, method for manufacturing the same and in-memory computer element comprising the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005310881A (en) * 2004-04-19 2005-11-04 Matsushita Electric Ind Co Ltd FET type ferroelectric memory cell and FET type ferroelectric memory
KR20090132874A (en) * 2008-06-23 2009-12-31 삼성전자주식회사 Ferroelectric Memory Devices
WO2010036210A1 (en) * 2008-09-23 2010-04-01 National University Of Singapore Graphene memory cell and fabrication methods thereof
US20110101309A1 (en) * 2009-11-04 2011-05-05 International Business Machines Corporation Graphene based switching device having a tunable bandgap

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005310881A (en) * 2004-04-19 2005-11-04 Matsushita Electric Ind Co Ltd FET type ferroelectric memory cell and FET type ferroelectric memory
KR20090132874A (en) * 2008-06-23 2009-12-31 삼성전자주식회사 Ferroelectric Memory Devices
WO2010036210A1 (en) * 2008-09-23 2010-04-01 National University Of Singapore Graphene memory cell and fabrication methods thereof
US20110101309A1 (en) * 2009-11-04 2011-05-05 International Business Machines Corporation Graphene based switching device having a tunable bandgap

Also Published As

Publication number Publication date
KR20130007483A (en) 2013-01-18
WO2013002601A2 (en) 2013-01-03
WO2013002601A9 (en) 2013-06-06

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