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WO2013002008A1 - Solar cell - Google Patents

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Publication number
WO2013002008A1
WO2013002008A1 PCT/JP2012/064742 JP2012064742W WO2013002008A1 WO 2013002008 A1 WO2013002008 A1 WO 2013002008A1 JP 2012064742 W JP2012064742 W JP 2012064742W WO 2013002008 A1 WO2013002008 A1 WO 2013002008A1
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Prior art keywords
side electrode
type
oxide layer
type surface
solar cell
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French (fr)
Japanese (ja)
Inventor
孝裕 羽賀
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to a solar cell.
  • back junction solar cells are known. In the back junction solar cell, it is not necessary to provide an electrode on the light receiving surface. For this reason, in the back junction solar cell, the light receiving efficiency can be increased. Therefore, improved photoelectric conversion efficiency can be realized.
  • Patent Document 1 as a back junction solar cell, a p-side electrode layer and an n-side electrode layer, a transparent electrode disposed between each of the p-side electrode layer and the n-side electrode layer, and the photoelectric conversion unit.
  • a solar cell comprising an electrode layer is described.
  • the transparent electrode layer disposed below the p-side electrode layer and the transparent electrode layer disposed below the n-side electrode layer are spaced apart and electrically insulated.
  • Patent Document 1 describes that the transparent electrode layer is formed of a light-transmitting conductive material such as ITO, tin oxide, or zinc oxide.
  • An object of the present invention is to provide a solar cell having improved photoelectric conversion efficiency.
  • the solar cell according to the present invention includes a photoelectric conversion unit, a transparent oxide layer, a p-side electrode, and an n-side electrode.
  • the photoelectric conversion unit has first and second main surfaces.
  • the first main surface includes a p-type surface and an n-type surface.
  • the transparent oxide layer is continuously provided on the p-type surface and the n-type surface.
  • the sheet resistance of the transparent oxide layer is 1 M ⁇ / ⁇ or more.
  • the p-side electrode is disposed on a portion located on the p-type surface of the transparent oxide layer.
  • the n-side electrode is disposed on a portion located on the n-type surface of the transparent oxide layer.
  • a solar cell having improved photoelectric conversion efficiency can be provided.
  • FIG. 1 is a schematic plan view of the solar cell according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG.
  • FIG. 3 is a schematic cross-sectional view of a solar cell according to the second embodiment.
  • FIG. 1 is a schematic plan view of the solar cell according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG.
  • the solar cell 1 shown in FIGS. 1 and 2 is a back junction solar cell.
  • the solar cell 1 includes a photoelectric conversion unit 10.
  • the photoelectric conversion unit 10 includes first and second main surfaces 10a and 10b. In the solar cell 1, light is received mainly on the second main surface 10b. For this reason, the 2nd main surface 10b may be called a light-receiving surface, and the 1st main surface 10a may be called a back surface.
  • First main surface 10a includes p-type surface 10ap and n-type surface 10an.
  • the photoelectric conversion unit 10 includes a semiconductor substrate 11.
  • the semiconductor substrate 11 has one conductivity type.
  • the semiconductor substrate 11 is n-type will be described, but the semiconductor substrate may be p-type.
  • the semiconductor substrate 11 can be composed of, for example, a crystalline silicon substrate such as a single crystal silicon substrate or a polycrystalline silicon substrate.
  • the semiconductor substrate 11 has first and second main surfaces 11a and 11b. On the second main surface 11b, an i-type semiconductor layer 12i, which is a substantially intrinsic semiconductor layer, an n-type semiconductor layer 13n, and a protective layer 14 are arranged in this order.
  • the i-type semiconductor layer 12i can be made of, for example, substantially intrinsic amorphous silicon containing hydrogen.
  • the n-type semiconductor layer 13n can be made of, for example, n-type amorphous silicon containing hydrogen.
  • the protective layer 14 has a function as a reflection suppression layer in addition to a function as a protective layer.
  • the protective layer 14 can be made of, for example, silicon nitride.
  • a p-type semiconductor layer 15p and an n-type semiconductor layer 16n are disposed on the first main surface 11a.
  • the p-type semiconductor layer 15p and the n-type semiconductor layer 16n are disposed on different portions of the first main surface 11a.
  • the p-type surface 10ap is constituted by a p-type semiconductor layer 15p.
  • the n-type surface 10an is constituted by an n-type semiconductor layer 16n.
  • the p-type semiconductor layer 15p can be made of, for example, p-type amorphous silicon containing hydrogen.
  • the n-type semiconductor layer 16n can be made of, for example, n-type amorphous silicon containing hydrogen.
  • a substantially intrinsic i-type semiconductor layer 15i having a thickness that does not substantially contribute to power generation is disposed between the p-type semiconductor layer 15p and the first main surface 11a. Between the n-type semiconductor layer 16n and the first major surface 11a, a substantially intrinsic i-type semiconductor layer 16i having a thickness that does not substantially contribute to power generation is disposed.
  • the i-type semiconductor layers 15i and 16i can be made of, for example, substantially intrinsic amorphous silicon containing hydrogen.
  • both end portions in the x direction of the semiconductor layers 15i and 15p are arranged on the semiconductor layer 16n. Both end portions of the semiconductor layers 15i and 15p in the x direction and the semiconductor layer 16n are isolated by the insulating layer 17 and electrically insulated.
  • the insulating layer 17 can be made of, for example, silicon nitride or silicon oxide.
  • a transparent oxide layer 18 that transmits at least part of light having a wavelength that contributes to power generation is disposed on the first main surface 10a of the photoelectric conversion unit 10.
  • the transparent oxide layer 18 is continuously provided on the p-type surface 10ap and the n-type surface 10an. Specifically, in the present embodiment, the transparent oxide layer 18 is disposed on substantially the entire first major surface 10a.
  • the sheet resistance of the transparent oxide layer 18 is preferably 1 M ⁇ / ⁇ or more.
  • the transparent oxide layer 18 includes indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), tin oxide (SnO2), indium tungsten oxide (IWO), and zinc oxide (ZnO). And at least one oxide selected from the group consisting of:
  • the thickness of the transparent oxide layer 18 is preferably in the range of 10 nm to 200 nm.
  • a p-side electrode 19p is disposed on the portion of the transparent oxide layer 18 located on the p-type surface 10ap.
  • an n-side electrode 20n is disposed on the portion of the transparent oxide layer 18 located on the n-type surface 10an.
  • the p-side electrode 19p and the n-side electrode 20n are arranged at a distance from each other.
  • the distance D between the p-side electrode 19p and the n-side electrode 20n is preferably at least 100 times the thickness of the transparent oxide layer 18.
  • the surface on the transparent oxide layer 18 side of each of the p-side electrode 19p and the n-side electrode 20n constitutes a light reflecting surface that reflects at least part of light having a wavelength that contributes to power generation of the solar cell 1.
  • Each of the p-side electrode 19p and the n-side electrode 20n is made of, for example, a metal such as Ag or Cu or an alloy containing at least one of these metals.
  • Each of the p-side electrode 19p and the n-side electrode 20n may be constituted by a plating film or may be constituted by a conductive paste layer.
  • the transparent electrode layer disposed below the p-side electrode and the transparent electrode layer disposed below the n-side electrode are arranged at an interval. And is electrically insulated.
  • the transparent electrode layer is made of a material having a low electric resistance.
  • the concentration of the carrier contained in the oxide constituting the transparent electrode layer is increased, the light absorption rate of the transparent electrode layer is increased. Therefore, the amount of light that is reflected again to the photoelectric conversion unit side by the electrode and re-enters the photoelectric conversion unit with respect to the amount of light transmitted through the photoelectric conversion unit is reduced.
  • a transparent electrode layer is not provided between the electrodes, light emitted from a portion located between the electrodes of the photoelectric conversion unit is not reflected to the photoelectric conversion unit side by the transparent electrode layer. Therefore, the light utilization efficiency is lowered.
  • the transparent oxide layer 18 is continuously provided on the p-type surface and the n-type surface.
  • the sheet resistance of the transparent oxide layer 18 is as high as 1 M ⁇ / ⁇ or more. For this reason, the light absorption rate of the transparent oxide layer 18 is low. Therefore, it is possible to increase the amount of light that is reflected again to the photoelectric conversion unit 10 by the electrodes 19p and 20n and reenters the photoelectric conversion unit 10 with respect to the amount of light transmitted through the photoelectric conversion unit 10. Further, a part of the light emitted from the portion located between the p-side electrode 19p and the n-side electrode 20n of the photoelectric conversion unit 10 is reflected by the transparent oxide layer 18 to the photoelectric conversion unit 10 side. Therefore, the utilization efficiency of the light radiate
  • the transparent oxide layer 18 Since the transparent oxide layer 18 has a high sheet resistance as described above, holes are collected by the n-side electrode 20n via the transparent oxide layer 18, and electrons are collected by the p-side electrode 19p. As a result, the photoelectric conversion efficiency is not substantially lowered.
  • the thickness of the transparent oxide layer 18 is smaller than the distance D between the p-side electrode 19p and the n-side electrode 20n, even if the transparent oxide layer 18 is provided, the p-type surface 10ap The electrical resistance between the p-side electrode 19p and the electrical resistance between the n-type surface 10an and the n-side electrode 20n do not increase so much.
  • the thickness of the transparent oxide layer 18 is preferably in the range of 10 nm to 200 nm. If the thickness of the transparent oxide layer 18 is too thick, the electrical resistance between the p-type surface 10ap and the p-side electrode 19p and the electrical resistance between the n-type surface 10an and the n-side electrode 20n may become too large. . On the other hand, if the thickness of the transparent oxide layer 18 is too thin, pinholes may be generated in the transparent oxide layer 18.
  • the distance D between the p-side electrode 19p and the n-side electrode 20n is preferably 100 times or more the thickness of the transparent oxide layer 18. In this case, it can suppress more effectively that a hole is collected by the n side electrode 20n via the transparent oxide layer 18, or an electron is collected by the p side electrode 19p. However, if the distance D between the p-side electrode 19p and the n-side electrode 20n is too large with respect to the thickness of the transparent oxide layer 18, the resistance of the p-side electrode 19p and the n-side electrode 20n increases, Photoelectric conversion efficiency may decrease.
  • the content of tin is preferably about 1% by mass to 10% by mass.
  • the content of tin is preferably about 1% by mass to 10% by mass.
  • the transparent oxide layer 18 is made of AZO, the aluminum content is preferably about 1% by mass to 10% by mass.
  • the adhesion between the photoelectric conversion unit 10 and the electrodes 19p and 20n can be enhanced. Therefore, peeling of the electrodes 19p and 20n can be suppressed.
  • FIG. 3 is a schematic cross-sectional view of a solar cell according to the second embodiment.
  • the photoelectric conversion unit 10 includes the semiconductor substrate 11 and the semiconductor layers 15p and 16n has been described.
  • the present invention is not limited to this configuration.
  • the photoelectric conversion unit 10 is provided with a p-type dopant diffusion region 11p constituting the p-type surface 10ap and an n-type dopant diffusion region 11n constituting the n-type surface 10an.
  • the semiconductor substrate 11 may be included.

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  • Photovoltaic Devices (AREA)

Abstract

Provided is a solar cell which has improved photoelectric conversion efficiency. A solar cell (1) is provided with a photoelectric conversion part (10), a transparent oxide layer (18), a p-side electrode (19p), and an n-side electrode (20n). The photoelectric conversion part (10) has first and second main surfaces (10a, 10b). The first main surface (10a) comprises a p-type surface (10ap) and an n-type surface (10an). The transparent oxide layer (18) is continuously provided on the p-type surface (10ap) and the n-type surface (10an). The sheet resistance of the transparent oxide layer (18) is 1 MΩ/□ or more. The p-side electrode (19p) is arranged on a portion of the transparent oxide layer (18), said portion being positioned above the p-type surface (10ap). The n-side electrode (20n) is arranged on a portion of the transparent oxide layer (18), said portion being positioned above the n-type surface (10an).

Description

太陽電池Solar cell

　本発明は、太陽電池に関する。 The present invention relates to a solar cell.

　従来、裏面接合型の太陽電池が知られている。裏面接合型の太陽電池では、受光面の上に電極を設ける必要がない。このため、裏面接合型の太陽電池では、光の受光効率を高めることができる。従って、改善された光電変換効率を実現し得る。 Conventionally, back junction solar cells are known. In the back junction solar cell, it is not necessary to provide an electrode on the light receiving surface. For this reason, in the back junction solar cell, the light receiving efficiency can be increased. Therefore, improved photoelectric conversion efficiency can be realized.

　特許文献１には、裏面接合型の太陽電池として、ｐ側電極層及びｎ側電極層と、ｐ側電極層とｎ側電極層とのそれぞれと光電変換部との間に配されている透明電極層とを備える太陽電池が記載されている。ｐ側電極層の下方に配された透明電極層と、ｎ側電極層の下方に配された透明電極層とは、間隔をおいて配されており、電気的に絶縁されている。特許文献１には、透明電極層を、ＩＴＯ、酸化スズ、酸化亜鉛などの透光性を有する導電性材料によって形成する旨が記載されている。 In Patent Document 1, as a back junction solar cell, a p-side electrode layer and an n-side electrode layer, a transparent electrode disposed between each of the p-side electrode layer and the n-side electrode layer, and the photoelectric conversion unit. A solar cell comprising an electrode layer is described. The transparent electrode layer disposed below the p-side electrode layer and the transparent electrode layer disposed below the n-side electrode layer are spaced apart and electrically insulated. Patent Document 1 describes that the transparent electrode layer is formed of a light-transmitting conductive material such as ITO, tin oxide, or zinc oxide.

特開２００９－２００２６７号公報JP 2009-200277 A

　近年、裏面接合型の太陽電池の光電変換効率をさらに向上したいという要望がある。 In recent years, there has been a desire to further improve the photoelectric conversion efficiency of back junction solar cells.

　本発明の目的は、改善された光電変換効率を有する太陽電池を提供することにある。 An object of the present invention is to provide a solar cell having improved photoelectric conversion efficiency.

　本発明に係る太陽電池は、光電変換部と、透明酸化物層と、ｐ側電極と、ｎ側電極とを備えている。光電変換部は、第１及び第２の主面を有する。第１の主面は、ｐ型表面及びｎ型表面を含む。透明酸化物層は、ｐ型表面及びｎ型表面の上に連続して設けられている。透明酸化物層のシート抵抗は、１ＭΩ／□以上である。ｐ側電極は、透明酸化物層のｐ型表面の上に位置する部分の上に配されている。ｎ側電極は、透明酸化物層のｎ型表面の上に位置する部分の上に配されている。 The solar cell according to the present invention includes a photoelectric conversion unit, a transparent oxide layer, a p-side electrode, and an n-side electrode. The photoelectric conversion unit has first and second main surfaces. The first main surface includes a p-type surface and an n-type surface. The transparent oxide layer is continuously provided on the p-type surface and the n-type surface. The sheet resistance of the transparent oxide layer is 1 MΩ / □ or more. The p-side electrode is disposed on a portion located on the p-type surface of the transparent oxide layer. The n-side electrode is disposed on a portion located on the n-type surface of the transparent oxide layer.

　本発明によれば、改善された光電変換効率を有する太陽電池を提供することができる。 According to the present invention, a solar cell having improved photoelectric conversion efficiency can be provided.

図１は、第１の実施形態に係る太陽電池の略図的平面図である。FIG. 1 is a schematic plan view of the solar cell according to the first embodiment. 図２は、図１の線ＩＩ－ＩＩにおける略図的断面図である。FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG. 図３は、第２の実施形態に係る太陽電池の略図的断面図である。FIG. 3 is a schematic cross-sectional view of a solar cell according to the second embodiment.

　以下、本発明を実施した好ましい形態の一例について説明する。但し、下記の実施形態は、単なる例示である。本発明は、下記の実施形態に何ら限定されない。 Hereinafter, an example of a preferable embodiment in which the present invention is implemented will be described. However, the following embodiment is merely an example. The present invention is not limited to the following embodiments.

　また、実施形態等において参照する各図面において、実質的に同一の機能を有する部材は同一の符号で参照することとする。また、実施形態等において参照する図面は、模式的に記載されたものであり、図面に描画された物体の寸法の比率などは、現実の物体の寸法の比率などとは異なる場合がある。図面相互間においても、物体の寸法比率等が異なる場合がある。具体的な物体の寸法比率等は、以下の説明を参酌して判断されるべきである。 In each drawing referred to in the embodiment and the like, members having substantially the same function are referred to by the same reference numerals. The drawings referred to in the embodiments and the like are schematically described, and the ratio of the dimensions of the objects drawn in the drawings may be different from the ratio of the dimensions of the actual objects. The dimensional ratio of the object may be different between the drawings. The specific dimensional ratio of the object should be determined in consideration of the following description.

　（第１の実施形態）
　図１は、第１の実施形態に係る太陽電池の略図的平面図である。図２は、図１の線ＩＩ－ＩＩにおける略図的断面図である。 (First embodiment)
FIG. 1 is a schematic plan view of the solar cell according to the first embodiment. FIG. 2 is a schematic cross-sectional view taken along line II-II in FIG.

　図１及び図２に示す太陽電池１は、裏面接合型の太陽電池である。太陽電池１は、光電変換部１０を備えている。光電変換部１０は、第１及び第２の主面１０ａ、１０ｂを有する。太陽電池１では、主として第２の主面１０ｂにおいて受光する。このため、第２の主面１０ｂを受光面といい、第１の主面１０ａを裏面ということがある。第１の主面１０ａは、ｐ型表面１０ａｐとｎ型表面１０ａｎとを含む。 The solar cell 1 shown in FIGS. 1 and 2 is a back junction solar cell. The solar cell 1 includes a photoelectric conversion unit 10. The photoelectric conversion unit 10 includes first and second main surfaces 10a and 10b. In the solar cell 1, light is received mainly on the second main surface 10b. For this reason, the 2nd main surface 10b may be called a light-receiving surface, and the 1st main surface 10a may be called a back surface. First main surface 10a includes p-type surface 10ap and n-type surface 10an.

　具体的には、本実施形態では、光電変換部１０は、半導体基板１１を有する。半導体基板１１は、一の導電型を有する。以下、半導体基板１１がｎ型である例について説明するが、半導体基板は、ｐ型であってもよい。 Specifically, in this embodiment, the photoelectric conversion unit 10 includes a semiconductor substrate 11. The semiconductor substrate 11 has one conductivity type. Hereinafter, an example in which the semiconductor substrate 11 is n-type will be described, but the semiconductor substrate may be p-type.

　半導体基板１１は、例えば、単結晶シリコン基板や多結晶シリコン基板などの結晶性シリコン基板などにより構成することができる。 The semiconductor substrate 11 can be composed of, for example, a crystalline silicon substrate such as a single crystal silicon substrate or a polycrystalline silicon substrate.

　半導体基板１１は、第１及び第２の主面１１ａ、１１ｂを有する。第２の主面１１ｂの上には、実質的に真性な半導体層であるｉ型半導体層１２ｉと、ｎ型半導体層１３ｎと、保護層１４とがこの順番で配されている。ｉ型半導体層１２ｉは、例えば、水素を含む実質的に真性なアモルファスシリコンにより構成することができる。ｎ型半導体層１３ｎは、例えば、水素を含むｎ型アモルファスシリコンにより構成することができる。保護層１４は、保護層としての機能に加え、反射抑制層としての機能も兼ね備えている。保護層１４は、例えば窒化ケイ素等により構成することができる。 The semiconductor substrate 11 has first and second main surfaces 11a and 11b. On the second main surface 11b, an i-type semiconductor layer 12i, which is a substantially intrinsic semiconductor layer, an n-type semiconductor layer 13n, and a protective layer 14 are arranged in this order. The i-type semiconductor layer 12i can be made of, for example, substantially intrinsic amorphous silicon containing hydrogen. The n-type semiconductor layer 13n can be made of, for example, n-type amorphous silicon containing hydrogen. The protective layer 14 has a function as a reflection suppression layer in addition to a function as a protective layer. The protective layer 14 can be made of, for example, silicon nitride.

　第１の主面１１ａの上には、ｐ型半導体層１５ｐとｎ型半導体層１６ｎとが配されている。ｐ型半導体層１５ｐとｎ型半導体層１６ｎとは、第１の主面１１ａの互いに異なる部分の上に配されている。ｐ型表面１０ａｐは、ｐ型半導体層１５ｐにより構成されている。ｎ型表面１０ａｎは、ｎ型半導体層１６ｎにより構成されている。ｐ型半導体層１５ｐは、例えば、水素を含むｐ型のアモルファスシリコンにより構成することができる。ｎ型半導体層１６ｎは、例えば、水素を含むｎ型のアモルファスシリコンにより構成することができる。 A p-type semiconductor layer 15p and an n-type semiconductor layer 16n are disposed on the first main surface 11a. The p-type semiconductor layer 15p and the n-type semiconductor layer 16n are disposed on different portions of the first main surface 11a. The p-type surface 10ap is constituted by a p-type semiconductor layer 15p. The n-type surface 10an is constituted by an n-type semiconductor layer 16n. The p-type semiconductor layer 15p can be made of, for example, p-type amorphous silicon containing hydrogen. The n-type semiconductor layer 16n can be made of, for example, n-type amorphous silicon containing hydrogen.

　ｐ型半導体層１５ｐと第１の主面１１ａとの間には、実質的に発電に寄与しない程度の厚みの、実質的に真性なｉ型半導体層１５ｉが配されている。ｎ型半導体層１６ｎと第１の主面１１ａとの間には、実質的に発電に寄与しない程度の厚みの、実質的に真性なｉ型半導体層１６ｉが配されている。ｉ型半導体層１５ｉ、１６ｉは、例えば水素を含む実質的に真性なアモルファスシリコンにより構成することができる。 Between the p-type semiconductor layer 15p and the first main surface 11a, a substantially intrinsic i-type semiconductor layer 15i having a thickness that does not substantially contribute to power generation is disposed. Between the n-type semiconductor layer 16n and the first major surface 11a, a substantially intrinsic i-type semiconductor layer 16i having a thickness that does not substantially contribute to power generation is disposed. The i-type semiconductor layers 15i and 16i can be made of, for example, substantially intrinsic amorphous silicon containing hydrogen.

　なお、本実施形態では、半導体層１５ｉ、１５ｐのｘ方向における両端部は、半導体層１６ｎの上に配されている。半導体層１５ｉ、１５ｐのｘ方向における両端部と、半導体層１６ｎとは、絶縁層１７によって隔離され、電気的に絶縁されている。なお、絶縁層１７は、例えば窒化ケイ素や酸化ケイ素等により構成することができる。 In this embodiment, both end portions in the x direction of the semiconductor layers 15i and 15p are arranged on the semiconductor layer 16n. Both end portions of the semiconductor layers 15i and 15p in the x direction and the semiconductor layer 16n are isolated by the insulating layer 17 and electrically insulated. The insulating layer 17 can be made of, for example, silicon nitride or silicon oxide.

　光電変換部１０の第１の主面１０ａの上には、発電に寄与する波長の光の少なくとも一部を透過させる透明酸化物層１８が配されている。この透明酸化物層１８は、ｐ型表面１０ａｐ及びｎ型表面１０ａｎの上に連続して設けられている。具体的には、本実施形態では、透明酸化物層１８は、第１の主面１０ａの実質的に全体の上に配されている。透明酸化物層１８のシート抵抗は、１ＭΩ／□以上であることが好ましい。 A transparent oxide layer 18 that transmits at least part of light having a wavelength that contributes to power generation is disposed on the first main surface 10a of the photoelectric conversion unit 10. The transparent oxide layer 18 is continuously provided on the p-type surface 10ap and the n-type surface 10an. Specifically, in the present embodiment, the transparent oxide layer 18 is disposed on substantially the entire first major surface 10a. The sheet resistance of the transparent oxide layer 18 is preferably 1 MΩ / □ or more.

　透明酸化物層１８は、インジウムスズ酸化物（ＩＴＯ）、インジウム亜鉛酸化物（ＩＺＯ）、アルミニウム亜鉛酸化物（ＡＺＯ）、酸化スズ（ＳｎＯ２），インジウムタングステン酸化物（ＩＷＯ）及び酸化亜鉛（ＺｎＯ）からなる群から選ばれた少なくとも一種の酸化物により構成することができる。 The transparent oxide layer 18 includes indium tin oxide (ITO), indium zinc oxide (IZO), aluminum zinc oxide (AZO), tin oxide (SnO2), indium tungsten oxide (IWO), and zinc oxide (ZnO). And at least one oxide selected from the group consisting of:

　透明酸化物層１８の厚みは、１０ｎｍ～２００ｎｍの範囲内にあることが好ましい。 The thickness of the transparent oxide layer 18 is preferably in the range of 10 nm to 200 nm.

　透明酸化物層１８のｐ型表面１０ａｐの上に位置している部分の上には、ｐ側電極１９ｐが配されている。一方、透明酸化物層１８のｎ型表面１０ａｎの上に位置している部分の上には、ｎ側電極２０ｎが配されている。ｐ側電極１９ｐとｎ側電極２０ｎとは、互いに間隔をおいて配置されている。ｐ側電極１９ｐとｎ側電極２０ｎとの間の間隔Ｄは、透明酸化物層１８の厚みの１００倍以上であることが好ましい。 On the portion of the transparent oxide layer 18 located on the p-type surface 10ap, a p-side electrode 19p is disposed. On the other hand, an n-side electrode 20n is disposed on the portion of the transparent oxide layer 18 located on the n-type surface 10an. The p-side electrode 19p and the n-side electrode 20n are arranged at a distance from each other. The distance D between the p-side electrode 19p and the n-side electrode 20n is preferably at least 100 times the thickness of the transparent oxide layer 18.

　ｐ側電極１９ｐ及びｎ側電極２０ｎのそれぞれの透明酸化物層１８側の表面は、太陽電池１の発電に寄与する波長の光の少なくとも一部を反射させる光反射面を構成している。 The surface on the transparent oxide layer 18 side of each of the p-side electrode 19p and the n-side electrode 20n constitutes a light reflecting surface that reflects at least part of light having a wavelength that contributes to power generation of the solar cell 1.

　ｐ側電極１９ｐ及びｎ側電極２０ｎのそれぞれは、例えば、Ａｇ、Ｃｕ等の金属やそれらの金属の少なくとも一方を含む合金等により構成されている。ｐ側電極１９ｐ及びｎ側電極２０ｎのそれぞれは、めっき膜により構成されていてもよいし、導電性ペースト層により構成されていてもよい。 Each of the p-side electrode 19p and the n-side electrode 20n is made of, for example, a metal such as Ag or Cu or an alloy containing at least one of these metals. Each of the p-side electrode 19p and the n-side electrode 20n may be constituted by a plating film or may be constituted by a conductive paste layer.

　太陽電池においては、光電変換部において生成された正孔をｐ側電極で収集し、電子をｎ側電極で収集する。高い光電変換効率を得る観点からは、ｐ側電極による正孔の収集率及びｎ側電極により電子の収集率を高めることが重要である。このため、特許文献１に記載のように、通常は、ｐ側電極の下方に配された透明電極層と、ｎ側電極の下方に配された透明電極層とは、間隔をおいて配されており、電気的に絶縁されている。また、透明電極層は、低い電気抵抗を有する材料により構成されている。 In the solar cell, holes generated in the photoelectric conversion unit are collected by the p-side electrode, and electrons are collected by the n-side electrode. From the viewpoint of obtaining high photoelectric conversion efficiency, it is important to increase the hole collection rate by the p-side electrode and the electron collection rate by the n-side electrode. For this reason, as described in Patent Document 1, normally, the transparent electrode layer disposed below the p-side electrode and the transparent electrode layer disposed below the n-side electrode are arranged at an interval. And is electrically insulated. The transparent electrode layer is made of a material having a low electric resistance.

　しかしながら、透明電極層の電気抵抗を低くする必要がある。透明電極層を構成している酸化物に含まれるキャリアの濃度を高くすると、透明電極層の光吸収率が高くなる。よって、光電変換部を透過した光の量に対する、電極によって再び光電変換部側に反射され、光電変換部に再入射する光の量が少なくなる。また、電極間の間には、透明電極層が設けられていないため、光電変換部の電極間に位置する部分から出射する光は、透明電極層によって光電変換部側に反射されない。よって、光の利用効率が低くなる。 However, it is necessary to lower the electrical resistance of the transparent electrode layer. When the concentration of the carrier contained in the oxide constituting the transparent electrode layer is increased, the light absorption rate of the transparent electrode layer is increased. Therefore, the amount of light that is reflected again to the photoelectric conversion unit side by the electrode and re-enters the photoelectric conversion unit with respect to the amount of light transmitted through the photoelectric conversion unit is reduced. In addition, since a transparent electrode layer is not provided between the electrodes, light emitted from a portion located between the electrodes of the photoelectric conversion unit is not reflected to the photoelectric conversion unit side by the transparent electrode layer. Therefore, the light utilization efficiency is lowered.

　それに対して本実施形態では、透明酸化物層１８がｐ型表面及びｎ型表面の上に連続して設けられている。そして、透明酸化物層１８のシート抵抗は、１ＭΩ／□以上と高い。このため、透明酸化物層１８の光吸収率は低い。よって、光電変換部１０を透過した光の量に対する、電極１９ｐ、２０ｎによって再び光電変換部１０側に反射され、光電変換部１０に再入射する光の量を多くすることができる。また、光電変換部１０のｐ側電極１９ｐとｎ側電極２０ｎとの間に位置する部分から出射した光の一部は、透明酸化物層１８によって光電変換部１０側に反射される。よって、光電変換部１０のｐ側電極１９ｐとｎ側電極２０ｎとの間に位置する部分から出射した光の利用効率を高めることができる。その結果、改善された光電変換効率を実現することができる。 In contrast, in this embodiment, the transparent oxide layer 18 is continuously provided on the p-type surface and the n-type surface. And the sheet resistance of the transparent oxide layer 18 is as high as 1 MΩ / □ or more. For this reason, the light absorption rate of the transparent oxide layer 18 is low. Therefore, it is possible to increase the amount of light that is reflected again to the photoelectric conversion unit 10 by the electrodes 19p and 20n and reenters the photoelectric conversion unit 10 with respect to the amount of light transmitted through the photoelectric conversion unit 10. Further, a part of the light emitted from the portion located between the p-side electrode 19p and the n-side electrode 20n of the photoelectric conversion unit 10 is reflected by the transparent oxide layer 18 to the photoelectric conversion unit 10 side. Therefore, the utilization efficiency of the light radiate | emitted from the part located between the p side electrode 19p and the n side electrode 20n of the photoelectric conversion part 10 can be improved. As a result, improved photoelectric conversion efficiency can be realized.

　なお、透明酸化物層１８は上述のように高いシート抵抗を有するため、透明酸化物層１８を経由して正孔がｎ側電極２０ｎに収集されたり、電子がｐ側電極１９ｐに収集されたりすることによる光電変換効率の低下は実質的に生じない。一方、透明酸化物層１８の厚みは、ｐ側電極１９ｐとｎ側電極２０ｎとの間の間隔Ｄよりも小さいため、透明酸化物層１８を設けた場合であっても、ｐ型表面１０ａｐとｐ側電極１９ｐとの間の電気抵抗やｎ型表面１０ａｎとｎ側電極２０ｎとの間の電気抵抗はそれほど増大しない。 Since the transparent oxide layer 18 has a high sheet resistance as described above, holes are collected by the n-side electrode 20n via the transparent oxide layer 18, and electrons are collected by the p-side electrode 19p. As a result, the photoelectric conversion efficiency is not substantially lowered. On the other hand, since the thickness of the transparent oxide layer 18 is smaller than the distance D between the p-side electrode 19p and the n-side electrode 20n, even if the transparent oxide layer 18 is provided, the p-type surface 10ap The electrical resistance between the p-side electrode 19p and the electrical resistance between the n-type surface 10an and the n-side electrode 20n do not increase so much.

　以上のような観点から、透明酸化物層１８の厚みは、１０ｎｍ～２００ｎｍの範囲内にあることが好ましい。透明酸化物層１８の厚みが厚すぎると、ｐ型表面１０ａｐとｐ側電極１９ｐとの間の電気抵抗やｎ型表面１０ａｎとｎ側電極２０ｎとの間の電気抵抗が大きくなりすぎる場合がある。一方、透明酸化物層１８の厚みが薄すぎると、透明酸化物層１８にピンホールが発生する場合がある。 From the above viewpoint, the thickness of the transparent oxide layer 18 is preferably in the range of 10 nm to 200 nm. If the thickness of the transparent oxide layer 18 is too thick, the electrical resistance between the p-type surface 10ap and the p-side electrode 19p and the electrical resistance between the n-type surface 10an and the n-side electrode 20n may become too large. . On the other hand, if the thickness of the transparent oxide layer 18 is too thin, pinholes may be generated in the transparent oxide layer 18.

　また、ｐ側電極１９ｐとｎ側電極２０ｎとの間の間隔Ｄは、透明酸化物層１８の厚みの１００倍以上であることが好ましい。この場合、透明酸化物層１８を経由して正孔がｎ側電極２０ｎに収集されたり、電子がｐ側電極１９ｐに収集されたりすることをより効果的に抑制することができる。但し、ｐ側電極１９ｐとｎ側電極２０ｎとの間の間隔Ｄが透明酸化物層１８の厚みに対して大きすぎると、ｐ側電極１９ｐ及びｎ側電極２０ｎの抵抗が高くなり、太陽電池の光電変換効率が低下する場合がある。 In addition, the distance D between the p-side electrode 19p and the n-side electrode 20n is preferably 100 times or more the thickness of the transparent oxide layer 18. In this case, it can suppress more effectively that a hole is collected by the n side electrode 20n via the transparent oxide layer 18, or an electron is collected by the p side electrode 19p. However, if the distance D between the p-side electrode 19p and the n-side electrode 20n is too large with respect to the thickness of the transparent oxide layer 18, the resistance of the p-side electrode 19p and the n-side electrode 20n increases, Photoelectric conversion efficiency may decrease.

　透明酸化物層１８がＩＴＯからなる場合は、スズの含有率は、１質量％～１０質量％程度であることが好ましい。透明酸化物層１８がＩＺＯからなる場合は、スズの含有率は、１質量％～１０質量％程度であることが好ましい。透明酸化物層１８がＡＺＯからなる場合は、アルミニウムの含有率は、１質量％～１０質量％程度であることが好ましい。 When the transparent oxide layer 18 is made of ITO, the content of tin is preferably about 1% by mass to 10% by mass. When the transparent oxide layer 18 is made of IZO, the content of tin is preferably about 1% by mass to 10% by mass. When the transparent oxide layer 18 is made of AZO, the aluminum content is preferably about 1% by mass to 10% by mass.

　また、光電変換部１０が透明酸化物層１８により保護されるため、耐湿性や耐アルカリ性を向上することができる。 Moreover, since the photoelectric conversion part 10 is protected by the transparent oxide layer 18, moisture resistance and alkali resistance can be improved.

　透明酸化物層１８を設けることによって、光電変換部１０と電極１９ｐ、２０ｎとの密着性を高めることができる。よって、電極１９ｐ、２０ｎの剥離を抑制することができる。 By providing the transparent oxide layer 18, the adhesion between the photoelectric conversion unit 10 and the electrodes 19p and 20n can be enhanced. Therefore, peeling of the electrodes 19p and 20n can be suppressed.

　以下、本発明の好ましい実施形態の他の例について説明する。以下の説明において、上記第１の実施形態と実質的に共通の機能を有する部材を共通の符号で参照し、説明を省略する。 Hereinafter, another example of the preferred embodiment of the present invention will be described. In the following description, members having substantially the same functions as those of the first embodiment are referred to by the same reference numerals, and description thereof is omitted.

　（第２の実施形態）
　図３は、第２の実施形態に係る太陽電池の略図的断面図である。 (Second Embodiment)
FIG. 3 is a schematic cross-sectional view of a solar cell according to the second embodiment.

　第１の実施形態では、光電変換部１０が半導体基板１１と半導体層１５ｐ、１６ｎを有する例について説明した。但し、本発明は、この構成に限定されない。図３に示すように、光電変換部１０は、ｐ型表面１０ａｐを構成しているｐ型ドーパント拡散領域１１ｐと、ｎ型表面１０ａｎを構成しているｎ型ドーパント拡散領域１１ｎとが設けられた半導体基板１１を有していてもよい。 In the first embodiment, the example in which the photoelectric conversion unit 10 includes the semiconductor substrate 11 and the semiconductor layers 15p and 16n has been described. However, the present invention is not limited to this configuration. As shown in FIG. 3, the photoelectric conversion unit 10 is provided with a p-type dopant diffusion region 11p constituting the p-type surface 10ap and an n-type dopant diffusion region 11n constituting the n-type surface 10an. The semiconductor substrate 11 may be included.

　本発明はここでは記載していない様々な実施形態を含む。従って、本発明の技術的範囲は上記の説明から妥当な特許請求の範囲に係る発明特定事項によってのみ定められるものである。 The present invention includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

１…太陽電池 
１０…光電変換部
１０ａ…光電変換部の第１の主面
１０ｂ…光電変換部の第２の主面
１０ａｎ…ｎ型表面
１０ａｐ…ｐ型表面
１１…半導体基板
１１ａ…半導体基板の第１の主面
１１ｂ…半導体基板の第２の主面
１１ｎ…ｎ型ドーパント拡散領域
１１ｐ…ｐ型ドーパント拡散領域
１５ｐ…ｐ型半導体層
１６ｎ…ｎ型半導体層
１８…透明酸化物層
１９ｐ…ｐ側電極
２０ｎ…ｎ側電極 1 ... Solar cell
DESCRIPTION OF SYMBOLS 10 ... Photoelectric conversion part 10a ... 1st main surface 10b of a photoelectric conversion part ... 2nd main surface 10an of a photoelectric conversion part ... n-type surface 10ap ... p-type surface 11 ... Semiconductor substrate 11a ... 1st main surface of a semiconductor substrate Surface 11b ... Second main surface 11n of semiconductor substrate ... n-type dopant diffusion region 11p ... p-type dopant diffusion region 15p ... p-type semiconductor layer 16n ... n-type semiconductor layer 18 ... transparent oxide layer 19p ... p-side electrode 20n ... n-side electrode

Claims (6)

　第１及び第２の主面を有し、前記第１の主面がｐ型表面及びｎ型表面を含む光電変換部と、
　前記ｐ型表面及び前記ｎ型表面の上に連続して設けられており、シート抵抗が１ＭΩ／□以上である透明酸化物層と、
　前記透明酸化物層の前記ｐ型表面の上に位置する部分の上に配されたｐ側電極と、
　前記透明酸化物層の前記ｎ型表面の上に位置する部分の上に配されたｎ側電極と、
を備える、太陽電池。 A photoelectric conversion unit having first and second main surfaces, wherein the first main surface includes a p-type surface and an n-type surface;
A transparent oxide layer provided continuously on the p-type surface and the n-type surface and having a sheet resistance of 1 MΩ / □ or more;
A p-side electrode disposed on a portion of the transparent oxide layer located on the p-type surface;
An n-side electrode disposed on a portion of the transparent oxide layer located on the n-type surface;
A solar cell comprising: 　前記透明酸化物層は、インジウムスズ酸化物、インジウム亜鉛酸化物、アルミニウム亜鉛酸化物、酸化スズ、インジウムタングステン酸化物及び酸化亜鉛からなる群から選ばれた少なくとも一種の酸化物により構成されている、請求項１に記載の太陽電池。 The transparent oxide layer is composed of at least one oxide selected from the group consisting of indium tin oxide, indium zinc oxide, aluminum zinc oxide, tin oxide, indium tungsten oxide, and zinc oxide. The solar cell according to claim 1. 　前記透明酸化物層の厚みが、１０ｎｍ～２００ｎｍの範囲内にある、請求項１または２に記載の太陽電池。 The solar cell according to claim 1 or 2, wherein the transparent oxide layer has a thickness in the range of 10 nm to 200 nm. 　前記ｐ側電極と前記ｎ側電極との間の距離は、前記透明酸化物層の厚み１００倍以上である、請求項１～３のいずれか一項に記載の太陽電池。 4. The solar cell according to claim 1, wherein the distance between the p-side electrode and the n-side electrode is 100 times or more the thickness of the transparent oxide layer. 　前記光電変換部は、
　一の導電型を有する半導体基板と、
　前記半導体基板の一主面の上に配されており、前記ｐ型表面を構成しているｐ型半導体層と、
　前記半導体基板の一主面の上に配されており、前記ｎ型表面を構成しているｎ型半導体層と、
を有する、請求項１～４のいずれか一項に記載の太陽電池。 The photoelectric converter is
A semiconductor substrate having one conductivity type;
A p-type semiconductor layer disposed on one main surface of the semiconductor substrate and constituting the p-type surface;
An n-type semiconductor layer disposed on one main surface of the semiconductor substrate and constituting the n-type surface;
The solar cell according to any one of claims 1 to 4, comprising 　前記光電変換部は、前記ｐ型表面を構成しているｐ型ドーパント拡散領域と、前記ｎ型表面を構成しているｎ型ドーパント拡散領域とが設けられた半導体基板を有する、請求項１～４のいずれか一項に記載の太陽電池。 The photoelectric conversion unit has a semiconductor substrate provided with a p-type dopant diffusion region constituting the p-type surface and an n-type dopant diffusion region constituting the n-type surface. The solar cell according to any one of 4.
PCT/JP2012/064742 2011-06-29 2012-06-08 Solar cell Ceased WO2013002008A1 (en)

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