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WO2013092759A2 - Procédé de gravure de couches de sio2 sur des tranches minces - Google Patents

Procédé de gravure de couches de sio2 sur des tranches minces Download PDF

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Publication number
WO2013092759A2
WO2013092759A2 PCT/EP2012/076227 EP2012076227W WO2013092759A2 WO 2013092759 A2 WO2013092759 A2 WO 2013092759A2 EP 2012076227 W EP2012076227 W EP 2012076227W WO 2013092759 A2 WO2013092759 A2 WO 2013092759A2
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WIPO (PCT)
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volume
equal
etching
cof
gas
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Ceased
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PCT/EP2012/076227
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WO2013092759A3 (fr
Inventor
Marcello Riva
Reiner Fischer
Gerd Walther
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Solvay SA
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Solvay SA
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Publication of WO2013092759A2 publication Critical patent/WO2013092759A2/fr
Publication of WO2013092759A3 publication Critical patent/WO2013092759A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H10P50/283—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass

Definitions

  • the present invention relates to a method for etching of Si0 2 layers from solid bodies, especially from thin wafers, especially from thin Si wafers.
  • Semiconductors, flat panel displays or photovoltaic elements are manufactured in subsequent steps of applying inorganic or organic layers and etching them partially away to provide isolating layers or areas which are conductive or semi- conductive for electric current.
  • the process for the formation of layers is often performed by operations which include chemical vapor deposition and plasma etching on a substrate which, during the process, is typically located on a support provided inside a plasma process chamber.
  • substrates are semi-conducting inorganic materials ; preferred substrates in the frame of the present invention are silicon wafers.
  • Etching agents are known. F 2 and COF 2 are preferred etching agents because they have no impact on the ozone layer and have a lower Global Warming Potential ("GWP") compared to other etching agents like SF 6 ,
  • wafers For certain uses, especially for solar panels (photovoltaic elements), very thin substrates or wafers are used. Often, wafers are applied having a thickness of equal to or lower than 500 ⁇ , often equal to or lower than 230 ⁇ down to a thickness of equal to or lower than 130 ⁇ and even equal to or lower than 100 ⁇ .
  • Si0 2 (including phosphosilicate glass, "PSG") layers have to be removed. These layers may be very thin, for semiconductor items, they may be, for example, equal to or thinner than 10 nm, and in respect of solar panels, they maybe somewhat thicker, e.g. 10 ⁇ or thinner. It is known to etch them using aqueous hydrogen fluoride (hydrofluoric acid). An undesired percentage of the wafers breaks during the wet etching process due to mechanical impact.
  • aqueous hydrogen fluoride hydrofluoric acid
  • F 2 or COF 2 may be used as etching gases to etch Si0 2 layers ; but they are very reactive towards Si, and after having etched the Si0 2 layer, the etching process would continue undesirably on the layer or layers coated by Si0 2 .
  • p-n layers mainly consisting of Si (which is etched fast by F 2 or COF 2 ) are coated by the Si0 2 layer. Accordingly, it is difficult to etch thin Si0 2 layers reliably using these reactive etchants.
  • the present invention now makes available in particular an efficient process for the etching of Si0 2 layers, especially thin Si0 2 layers.
  • the invention concerns in consequence a method for the manufacture of a semiconductor item comprising a step of providing a semiconductor item having a coating of Si0 2 and etching a layer of Si0 2 from the surface of the
  • semiconductor item which comprises a step of treating the layer of Si0 2 in a plasma with a gas comprising NF 3 , SF 6 , molecular fluorine (F 2 ) or COF 2 which gas further comprises at least one additional gas selected from the group consisting of oxygen (0 2 ) or hydrogen (H 2 ), wherein the semiconductor item has a thickness of equal to or lower than 1000 ⁇ , and wherein the Si0 2 layer has a thickness of equal to or less than 10 ⁇ .
  • a gas comprising NF 3 , SF 6 , molecular fluorine (F 2 ) or COF 2 which gas further comprises at least one additional gas selected from the group consisting of oxygen (0 2 ) or hydrogen (H 2 ), wherein the semiconductor item has a thickness of equal to or lower than 1000 ⁇ , and wherein the Si0 2 layer has a thickness of equal to or less than 10 ⁇ .
  • Si0 2 includes PSG coatings.
  • the absolutely preferred embodiment of the invention is a method for the manufacture of a semiconductor item
  • etching gas comprising a step of providing a semiconductor item having a coating of Si0 2 and etching the Si0 2 layer wherein an etching gas is applied which contains F 2 or COF 2 wherein said etching gas further comprises at least one additional gas selected from the group consisting of 0 2 or H 2 , and wherein the semiconductor item has a thickness of equal to or lower than 1000 ⁇ , and wherein the Si0 2 layer has a thickness of equal to or less than 10 ⁇ .
  • the etching gas contains 0 2 or H 2 . In another embodiment, the etching gas contains 0 2 and H 2 . It is preferred that the etching gas contains H 2 .
  • the semiconductor item is constituted from a material which reacts comparably faster with F 2 or COF 2 compared to Si0 2 but which reacts with F 2 or COF 2 and 0 2 and/or H 2 to form a compound with slower reactivity.
  • the semiconductor item is constituted from a material which has a slow reactivity with HF.
  • the Si0 2 coating may extend over the whole surface of the item, or it may partially coat the surface of the item ; preferably, the semiconductor item is selected from the group consisting of a semiconductor, a flat panel display and a solar substrate, especially a solar panel.
  • the item is a flat panel display or a solar substrate, especially a solar panel.
  • it has the form of a wafer, especially preferably being a Si wafer having an Si0 2 coating or a PSG coating.
  • the semiconductor item is formed from silicon (Si).
  • the step of etching the Si0 2 layer is performed in an improved manner by applying gases which, additionally to F 2 or COF 2 , comprise 0 2 or H 2 .
  • the gas additionally contains 0 2 , it is much easier to determine the moment when the etching process of the Si0 2 layer must be stopped to prevent Si in the semiconductor item to be etched.
  • the etch rate of F 2 or COF 2 applied on Si0 2 is slow compared to the respective etch rate of Si.
  • the presence of 0 2 in the etch gas leads to the formation of Si0 2 from the Si, and thus, the etch rate is reduced, with a reduced over-etching.
  • the gas additionally contains H 2 , HF is formed. HF assists in the etching of Si0 2 , but is not reactive with Si. Thus, the etch reaction is preferential for Si0 2 etching.
  • the etching step is performed under the influence of a plasma.
  • the plasma may be a remote plasma or an in-situ plasma. It may be capacitively or inductively coupled.
  • a typical method to generate the plasma comprises exposing the gas to a high-frequency electrical field.
  • the frequency of the generated field is from 10 to 15 MHz.
  • a typical frequency is 13.56 MHz.
  • the frequency of the generated field is from 40 to 100 MHz, preferably 40 to 100 MHz.
  • a typical frequency is selected from 40 MHz and 60 MHz.
  • the frequency of the generated field is a microwave plasma with a frequency of equal to or greater than 500 MHz, preferably in the range of from 1 to 10 MHz with a typical frequency
  • Microwave frequency is preferred.
  • Plasma sources operating at the frequency ranges mentioned above either in Remote Plasma Source configuration ("RPS"), or built in into the plasma chamber (“in-situ”) are in use for the manufacture of Solar panel.
  • RPS Remote Plasma Source configuration
  • in-situ built in into the plasma chamber
  • the gas pressure is generally equal to or greater than 0.5 mbar, and often, it is equal to or greater than 0.5 Torr (0.67 mbar). Generally, the pressure is equal to or lower than 50 Torr (66.7 mbar). Preferably, the pressure is equal to or lower than 50 mbar.
  • the pressure is equal to or greater than 1 Torr (0.67 mbar), and more preferably, it is equal to or greater than 1 mbar.
  • the pressure is equal to or lower than 10 Torr (13.33 mbar), and more preferably, it is equal to or lower than 10 mbar. Especially preferably, the pressure is equal to or lower than 5 Torr (6.67 mbar).
  • a suitable pressure range is from 0.5 to 50 Torr (0.67 to 66.7 mbar). Another preferred range is from 0.5 mbar to 50 mbar. A more preferred range, according to one embodiment, often is from 1 Torr (1.33 mbar) to 10 Torr (13.33 mbar). According to another embodiment, the pressure is preferably in a range of from 1 to 10 mbar.
  • the life time of the radicals in the gas is generally from 1 to 1000 ms, more often from 400 to 700 ms.
  • the power applied to generate the plasma is generally from 1 to 100000 W, often from 5000 to 60000 W, especially preferably from 850 to 40000 W, and most preferably, from 1000 to 40000 W.
  • the treatment is carried out by the remote plasma technology.
  • in-situ plasma is generated, especially a microwave plasma.
  • such in-situ plasma is generated inside a process chamber comprising a device suitable for generating a plasma from the gases described above, in particular from purified molecular fluorine.
  • Suitable devices include, for example, a pair of electrodes capable of generating a high frequency electrical field.
  • the semiconductor item has a thickness of equal to or lower than 1000 ⁇ , preferably equal to or less than 500 ⁇ , most preferably, equal to or less than 250 ⁇ .
  • the process of the invention is especially suitable to etch thin Si0 2 layers on thin bodies of Si.
  • the term "thin Si0 2 layer” denotes preferably layers which, for solar panels, have a thickness of equal to or lower than several ⁇ , e.g. equal to or less than 10 ⁇ .
  • Other semiconductor items may have thinner Si0 2 layers, especially layers of equal to or less than 1 ⁇ , preferably equal to or less than 500 nm, more preferably, equal to or less than 150 nm, e.g. layers of equal to or less than 100 nm and sometimes even layers of equal to or less than 10 nm.
  • thin bodies of Si preferably denotes Si bodies having a thickness of equal to or less than 1000 ⁇ as mentioned above, more preferably equal to or less than 500 ⁇ , most preferably, equal to or less than 250 ⁇ .
  • These thin bodies can be, for example, part of a semiconductor, a solar panel or a thin film transistor.
  • Preferred bodies are solar substrates, e.g. panels.
  • the dimension of the solar substrates is very flexible. Substrates of any geometrical form can be etched in the process of the present invention.
  • the substrate may especially be a substrate in the form of a circle, it may be a square substrate, it may have a rectangular form or it may be an ellipse. Of course, it may have other geometrical forms.
  • the dimension of the substrate is equal to or larger than 150 mm. Preferably, the dimension is equal to or
  • the dimension may be equal to or lower than 500 mm, and is preferably equal to or lower than approximately 400 mm. It has to be noted that the technical trend in solar panels is directed towards larger panels, so in the future, the dimension may even be larger than 500 mm.
  • the method of the invention is especially suitable for such large solar substrates.
  • dimension preferably denotes the diameter of substrates in the form of a circle, the longer diameter of an ellipse, the width of a rectangular form or the length of the side of a square form.
  • the diameter of the solar panels is very flexible. Often, the diameter is equal to or larger than 150 mm.
  • the diameter is equal to or greater 20 mm.
  • the diameter may be equal to or lower than 500 mm, and is preferably equal to or lower than approximately 400 mm. It has to be noted that the technical trend in solar panels is directed towards larger panels, so in the future, the diameter may even be larger than 500mm. The same is true for elliptical, square or rectangular substrates. The method of the invention is also suitable for such large solar panels.
  • Especially preferred embodiments concern the etching of Si0 2 layers including PSG layers having a thickness of equal to or less than 250 nm on solar substrates having a thickness of equal to or less than 1000 ⁇ , preferably, equal to or less than 500 nm, and applying a microwave plasma in a range of from 1 to MHz.
  • the etching gas consists preferably of COF 2 and H 2 ; more preferably, the etching gas consists of F 2 and H 2 which provided separately into the plasma apparatus.
  • the pressure in this preferred embodiment is equal to or lower than 5 mbar, and more preferably, equal to or lower than 2 mbar.
  • the F 2 may be provided in the form of a mixture with N 2 and argon.
  • the gas atmosphere in the Si0 2 layer etching step may preferably consist of F 2 and 0 2 , F 2 and H 2 , COF 2 and 0 2 or COF 2 and H 2 . It has to be noted that F 2 and H 2 usually will form immediately HF in an exothermic reaction if F 2 and H 2 are introduced in the etching step. Thus, it may be advisable to supply H 2 and F 2 separately into the chamber under respective safety precautions.
  • one or more inert gases may be additionally present.
  • the inert gas is at least one gas selected from the group consisting of N 2 , He, Ar and Ne.
  • N 2 , Ar or N 2 and Ar are present as inert gas.
  • the etching gas comprises F 2 as etchant.
  • the content of 0 2 is preferably equal to or lower than 20 % by volume. It may be higher but an undesired loss of etching activity may be observed.
  • the content of F 2 is preferably equal to or greater than 1 % by volume.
  • the content of 0 2 is preferably equal to or greater than 1 % by volume and equal to or lower than 20 % by volume, and F 2 is the balance to 100 % by volume.
  • the etching gas consists of 1 to 99 % by volume of F 2 , 1 to 20 % by volume of 0 2 , 0 to 70 % by volume of N 2 and 0 to 20 % by volume of Ar.
  • the content of at least one of N 2 and Ar is equal or greater than 1 % by volume.
  • the content of F 2 is equal to or greater than 1 % by volume, and it is preferably equal to or lower than 30 % by volume, and especially preferably, it is equal to or lower than 20 % by volume.
  • the content of 0 2 is preferably equal to or greater than 1 % by volume, and it is preferably equal to or lower than 20 % by volume.
  • the content of Ar and/or N 2 is the balance to 100 % by volume.
  • the content of Ar is preferably equal to or greater than 5 % by volume, and equal to or lower than 15 % by volume.
  • the etching gas comprises COF 2 .
  • the content of 0 2 is preferably equal to or lower than 20 % by volume, and in mixtures comprising COF 2 and H 2 , the content of H 2 is preferably equal to or lower than 20 % by volume.
  • An undesired loss of etching activity may be observed in mixtures containing COF 2 if the content of 0 2 or H 2 is too high.
  • the content of COF 2 in mixtures containing it is preferably equal to or greater than 1 % by volume.
  • the etching gas comprises or consists of 1 to 99 % by volume of COF 2 , 1 to 20 % by volume of 0 2 , 0 to 70 % by volume of N 2 and 0 to 20 % by volume of Ar, or wherein the etching gas comprises or consists of 1 to 99 % by volume of COF 2 , 1 to 99 % by volume, preferably, 1 to 70 % by volume of H 2 , e.g. l to 20 % by volume of H 2 , 0 to 70 % by volume of N 2 and 0 to 20 % by volume of Ar.
  • the content of at least one of N 2 and Ar is equal or greater than 1 % by volume.
  • the etching gas comprises or consists of 1 to 99 % by volume of COF 2 , 1 to 99 % by volume of H 2 , 0 to 70 % by volume of N 2 and 0 to 20 % by volume of Ar.
  • the content of 0 2 or H 2 is equal to or greater than 1 % by volume and equal to or lower than 70 % by volume, e.g., the content of 0 2 or H 2 is equal to or greater than 1 % by volume and equal to or lower than 20 % by volume, and the content of COF 2 is the balance to 100 % by volume.
  • a ternary mixture comprising COF 2 , 0 2 and an inert gas selected from Ar and N 2
  • a quaternary mixture comprising COF 2 , 0 2 , Ar and N 2
  • the content of COF 2 is equal to or greater than 1 % by volume, and it is preferably equal to or lower than 70 % by volume, preferably equal to or lower than 50 % by volume. It may be, for example, equal to or lower than 30 % by volume, and even equal to or lower than 20 % by volume.
  • the content of 0 2 is preferably equal to or greater than 1 % by volume, and it is preferably equal to or lower than 20 % by volume.
  • the content of Ar and/or N 2 is the balance to 100 % by volume.
  • the content of Ar is preferably equal to or greater than 5 % by volume, and equal to or lower than 50 % by volume.
  • the content of argon may even be equal to or lower than 15 % by volume.
  • a ternary mixture comprising COF 2 , 0 2 and an inert gas selected from Ar and N2, and a quaternary mixture comprising COF 2 , 0 2 , Ar and N 2 are especially preferred.
  • the content of COF 2 is equal to or greater than 1 % by volume ; it is preferably equal to or lower than 70 % by volume, and it is more preferably equal to or lower than 50 % by volume.
  • the content of COF 2 may be equal to or lower 30 % by volume ; and it may even be equal to or lower than 20 % by volume.
  • the content of 0 2 is preferably equal to or greater than 1 % by volume, and it is preferably equal to or lower than 50 % by volume. The content of 0 2 may even be equal to or lower than 20 % by volume.
  • the content of Ar and/or N 2 is the balance to 100 % by volume. In quaternary mixtures, the content of Ar is preferably equal to or greater than 5 % by volume, and equal to or lower than 50 % by volume. The content of Ar may even be equal to or lower than 15 % by volume.
  • the invention concerns a gas mixture, consisting of 1 to 99 % by volume of COF 2 , 1 to 99 % by volume of H 2 or 0 2 , 0 to 70 % by volume of N 2 and 0 to 20 % by volume of Ar.
  • the content of H 2 and 0 2 may be even equal to or lower than 20 % by volume.
  • the invention also concerns a gas mixture, consisting of 1 to 99 % by volume of SF 6 or NF 3 , 1 to 99 % by volume of H 2 , 0 to 70 % by volume of N 2 and 0 to 20 % by volume of Ar.
  • the gas mixtures can be applied in a premixed form ; they may be stored in respective pressure resistant containers. If desired, the mixtures can be generated immediately before introduced into the chamber, or, often especially preferred because it allows a high flexibility to adapt the constitution of the mixtures, they may be introduced separately into the chamber. It is of course also possible to introduce a mixture of F 2 and N 2 (e.g. a 20/80 vol/vol mixture of F 2 and N 2 ), or a mixture of F 2 /N 2 /Ar (e.g. 20/70/10 vol/vol/vol) and to introduce 0 2 separately. The same is possible for mixtures containing COF 2 .
  • F 2 and N 2 e.g. a 20/80 vol/vol mixture of F 2 and N 2
  • F 2 /N 2 /Ar e.g. 20/70/10 vol/vol/vol
  • Molecular fluorine for use in the present invention can be produced for example by heating suitable fluorometallates such as fluoronickelate or manganese tetrafluoride.
  • suitable fluorometallates such as fluoronickelate or manganese tetrafluoride.
  • the molecular fluorine is produced by electrolysis of a molten salt electrolyte, in particular a potassium
  • purified molecular fluorine (F 2 ) is used in the present invention as etchant.
  • Purification operations which are suitable to obtain purified molecular fluorine for use in the invention include removal of particles, for example by filtering or absorption and removal of starting materials, in particular HF, for example by absorption, and impurities such as in
  • the HF content in molecular fluorine used in the present invention is lower than 10 ppm molar.
  • the fluorine used in the present invention may contain at least 0.1 molar ppm of HF.
  • purified molecular fluorine for use in the present invention is obtained by a process comprising
  • the molecular fluorine in particular produced and purified as described here before, can be supplied to the method according to the invention, for example, in a transportable container.
  • This method of supply is preferred when mixtures of fluorine gas with an inert gas in particular as described above are used in the method according to the invention.
  • the molecular fluorine can be supplied directly from its manufacture and optional purification to the method according to the invention, for example through a gas delivery system connected both to the silicon hydride removal step and to the fluorine manufacture and/or purification.
  • a gas delivery system connected both to the silicon hydride removal step and to the fluorine manufacture and/or purification.
  • the invention concerns also a process for the manufacture of a product wherein at least one treatment step for the manufacture of the product is carried out in a treatment chamber which process comprises etching an Si0 2 layer or a PSG layer by the method according to the invention.
  • the manufacture of the product comprises at least one POCI 3 diffusion step or a chemical vapor deposition step of amorphous and/or microcrystalline Si0 2 , as described above, onto a substrate.
  • Typical products are selected from the group consisting of a semiconductor, a flat panel display and a photovoltaic element such as a solar substrate, e.g. a panel.
  • the product is a solar substrate, e.g. a panel.
  • Example 1 Etching of an Si0 2 layer using F 2 /0 2 and a remote plasma
  • a Si0 2 having a thickness of 500 nm on a Si wafer having a thickness of 128 ⁇ has to be etched.
  • the Si wafer has a size of 200 mm.
  • the solar panel is located onto the chuck of a plasma chamber, a gas consisting essentially of molecular fluorine and oxygen in a molar ratio of 1 :4 (20 % by volume of F 2 ) is introduced at 35 slm, and separately thereof, oxygen at 7 slm.
  • a gas having a molar ratio of 1 :4 (20 % by volume of F 2 ) is contained inside the chamber.
  • the gases are fed into the chamber through a remote plasma (RPS) system (10 kW, 13.56 Mhz) at a pressure of 100 mbar. After a 3 min treatment, the wafer is removed from the chamber.
  • RPS remote plasma
  • Example 2 Etching of an Si0 2 layer using F 2 /0 2 and an in-situ plasma
  • a Si0 2 having a thickness of 100 nm on a Si wafer having a thickness of 128 ⁇ has to be etched.
  • the Si wafer has a size of 200 mm.
  • the solar panel is located onto the chuck of a plasma chamber, a gas consisting essentially of molecular fluorine is introduced at 35 slm into the chamber, and 0 2 is introduced at 3.5 slm separately.
  • the in-situ plasma system (10 kW) is started at a pressure of 100 mbar ; after 3 min treatment, the wafer is removed from the chamber.
  • Example 3 Etching of an Si0 2 layer using an F 2 /Ar/N 2 mixture
  • Example 2 is repeated ; the F 2 is introduced into the plasma reactor in the form of a gas mixture consisting of F 2 (20 %), N 2 (70 %) and Ar (10 %) in a rate of 100 slm. 0 2 is introduced in a rate of 4 slm.
  • Example 4 Etching of an Si0 2 layer using COF 2 in combination with 0 2 as etchant in an in- situ plasma
  • a Si wafer with a thickness of approximately 250 ⁇ for a solar cell has a coating of Si0 2 with a thickness of 250 nm is brought into a plasma apparatus.
  • a gas consisting essentially of COF 2 is introduced at 10 slm into the chamber ;
  • 0 2 is introduced at 2 slm.
  • the pressure in the plasma apparatus is pressure of 5 mbar.
  • the in situ plasma is started and stable plasma is reached.
  • Example 5 In situ plasma treatment with COF 2 and H 2
  • a Si wafer having a thickness of 128 ⁇ with a coating of 100 nm Si0 2 is brought into a plasma chamber.
  • Neat COF 2 is fed into the chamber with a rate of 10 slm, and H 2 is fed in a rate of 2 slm.
  • the in situ plasma source is activated and stable plasma is reached.
  • the desired area of the Si0 2 is substantially etched away, and the solar panel can be provided to the next treatment step.
  • Example 6 Etching of an Si0 2 layer using F 2 /H 2 and a remote plasma
  • a Si0 2 having a thickness of 500 nm on a Si wafer having a thickness of 128 ⁇ has to be etched.
  • the Si wafer has a dimension of 200 mm.
  • the solar substrate is located onto the chuck of a plasma chamber, a gas consisting essentially of molecular fluorine and hydrogen in a molar ratio of 1 : 1
  • RPS remote plasma source
  • Example 7 Etching of an Si0 2 layer using F 2 /H 2 and an in-situ plasma
  • a Si0 2 having a thickness of 100 nm on a Si wafer having a thickness of 128 ⁇ has to be etched.
  • the Si wafer has a size of 200 mm.
  • the solar substrate is located onto the chuck of a plasma chamber, a gas consisting essentially of molecular fluorine is introduced at 2 slm into the chamber, and H 2 is introduced at 2 slm separately.
  • the in-situ plasma system (2.5 kW) is started at a pressure of 1 mbar ; after 1 min treatment, the wafer is removed from the chamber.
  • Example 8 Etching of an Si0 2 layer using COF 2 in combination with H 2 as etchant in an in- situ plasma
  • a Si wafer with a thickness of approximately 250 ⁇ for a solar cell has a coating of Si0 2 with a thickness of 250 nm is brought into a plasma apparatus.
  • a gas consisting essentially of COF 2 is introduced at 6 slm into the chamber ; H 2 is introduced at 2 slm.
  • the pressure in the plasma apparatus is pressure of 1 mbar.
  • the in situ plasma is started and stable plasma is reached. After 1 min treatment, desired areas of the Si0 2 layer are substantially etched away, and the solar substrate can be provided to the next treatment step.

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Abstract

L'invention concerne un procédé de gravure de couches de SiO2 ayant une épaisseur égale ou inférieure à 10 µm sur un article semi-conducteur possédant une épaisseur égale ou inférieure à 10 µm. Ce procédé comprend une étape de gravure de la couche de SiO2, un gaz de gravure étant appliqué qui contient NF3, SF6, ou, de préférence, F2 ou COF2, et ledit gaz de gravure comprenant en outre O2 et/ou H2.
PCT/EP2012/076227 2011-12-21 2012-12-19 Procédé de gravure de couches de sio2 sur des tranches minces Ceased WO2013092759A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP11195023.4 2011-12-21
EP11195023 2011-12-21

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WO2013092759A2 true WO2013092759A2 (fr) 2013-06-27
WO2013092759A3 WO2013092759A3 (fr) 2014-02-20

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2944385A1 (fr) * 2014-05-12 2015-11-18 Solvay SA Procédé de gravure et de nettoyage d'une chambre et gaz associé

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Publication number Priority date Publication date Assignee Title
JPS61295634A (ja) * 1985-06-25 1986-12-26 Oki Electric Ind Co Ltd ドライエツチング方法
IT1200785B (it) * 1985-10-14 1989-01-27 Sgs Microelettronica Spa Migliorato procedimento di attaco in plasma (rie) per realizzare contatti metallo-semiconduttore di tipo ohmico

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2944385A1 (fr) * 2014-05-12 2015-11-18 Solvay SA Procédé de gravure et de nettoyage d'une chambre et gaz associé
WO2015173003A1 (fr) * 2014-05-12 2015-11-19 Solvay Sa Procédé de gravure et de nettoyage de chambre et gaz associé

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