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WO2013089403A1 - Composition de résine photosensible - Google Patents

Composition de résine photosensible Download PDF

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Publication number
WO2013089403A1
WO2013089403A1 PCT/KR2012/010724 KR2012010724W WO2013089403A1 WO 2013089403 A1 WO2013089403 A1 WO 2013089403A1 KR 2012010724 W KR2012010724 W KR 2012010724W WO 2013089403 A1 WO2013089403 A1 WO 2013089403A1
Authority
WO
WIPO (PCT)
Prior art keywords
weight
photoresist composition
substrate
pattern
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2012/010724
Other languages
English (en)
Korean (ko)
Inventor
윤혁민
여태훈
이상훈
김진선
윤주표
김동명
김진우
박경진
이선희
황치용
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020120142518A external-priority patent/KR102025099B1/ko
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Priority to CN201280061667.1A priority Critical patent/CN104011594B/zh
Priority to JP2014547094A priority patent/JP6154398B2/ja
Publication of WO2013089403A1 publication Critical patent/WO2013089403A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H10P76/20—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds

Definitions

  • the polymerization initiator used for solution polymerization of such monomers may use a radical polymerization initiator, specifically 2,2-azobisisobutyronitrile, 2,2-azobis (2,4-dimethylvaleronitrile ), 2,2-azobis (4-methoxy 2,4-dimethylvaleronitrile), 1,1-azobis (cyclohexane-1-carbonitrile), or dimethyl 2,2'-azobisisobutyl Rate and the like can be used.
  • a radical polymerization initiator specifically 2,2-azobisisobutyronitrile, 2,2-azobis (2,4-dimethylvaleronitrile ), 2,2-azobis (4-methoxy 2,4-dimethylvaleronitrile), 1,1-azobis (cyclohexane-1-carbonitrile), or dimethyl 2,2'-azobisisobutyl Rate and the like can be used.
  • the (c) photosensitive agent may be a known photosensitive compound, and specific examples thereof include 1,2-quinonediazide 4-sulfonic acid ester, 1,2-quinonediazide 5-sulfonic acid ester, or 1 , 2-quinonediazide 6-sulfonic acid ester and the like can be used.
  • the solvent is included as the remainder of the entire photosensitive resin composition, and preferably included to be 50 to 90% by weight. When it is in the said range, the coating property and correction stability of the photosensitive resin composition can be improved simultaneously.
  • the solid content concentration of the photosensitive resin composition of this invention which consists of the above components is 10 to 50 weight%, and the composition which has a solid content of the said range is used after filtering with a Millipore filter of 0.01-0.2 micrometer. good.
  • the present invention provides a method for forming a micropattern using the photosensitive resin composition and an electric device including the micropattern formed by the method.
  • the electric element is a semiconductor or flat panel display having a fine pattern of 0.1 to 10 um, more preferably a fine pattern of 0.1 to 4 um line width.
  • a method of forming an organic insulating film is as follows.
  • Solid content concentration of the polymer solution containing the said acrylic copolymer was 50 weight%, and the weight average molecular weight of the polymer was 5,000. At this time, the weight average molecular weight is the polystyrene reduced average molecular weight measured using GPC.
  • the photoresist composition according to the present invention is a photoresist composition for forming a micropattern of 0.1 to 10 um of a substrate including a process of forming a halftone on a silicon nitride film (SiNx) of a substrate, which is generated by HMDS during the process. It is possible to reduce gas bubbles and particle defects fundamentally, and to reduce the manufacturing cost of the panel by reducing the process cost, and it has excellent room temperature stability, excellent dispersibility due to less discoloration, and excellent adhesion to the silicon nitride film. Therefore, even if the HMDS process is omitted, there is no risk of loss of the pattern during the development of the micronized pattern or collapse of the pattern during the post process.

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)

Abstract

La présente invention concerne une composition de résine photosensible, et plus particulièrement, une composition de résine photosensible pour former un motif fin pour un substrat comprenant un processus pour former un simili sur une couche de nitrure de silicium (SiNx) du substrat. La composition de résine photosensible de la présente invention présente une stabilité excellente à température ambiante, présente une petite décoloration pour une bonne perméabilité, et présente une bonne adhérence de la couche de nitrure de silicium de telle sorte que même lorsqu'un processus HMDS est omis, il n'y a pas de possibilité de la couche d'être emportée durant le processus de formation d'un motif fin ou de la détérioration de motif dans des processus subséquents.
PCT/KR2012/010724 2011-12-13 2012-12-11 Composition de résine photosensible Ceased WO2013089403A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201280061667.1A CN104011594B (zh) 2011-12-13 2012-12-11 光致抗蚀剂组合物
JP2014547094A JP6154398B2 (ja) 2011-12-13 2012-12-11 フォトレジスト組成物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2011-0133957 2011-12-13
KR20110133957 2011-12-13
KR1020120142518A KR102025099B1 (ko) 2011-12-13 2012-12-10 포토레지스트 조성물
KR10-2012-0142518 2012-12-10

Publications (1)

Publication Number Publication Date
WO2013089403A1 true WO2013089403A1 (fr) 2013-06-20

Family

ID=48612790

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/010724 Ceased WO2013089403A1 (fr) 2011-12-13 2012-12-11 Composition de résine photosensible

Country Status (1)

Country Link
WO (1) WO2013089403A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060121694A (ko) * 2005-05-24 2006-11-29 도쿄 오카 고교 가부시키가이샤 감광성 조성물 및 이 감광성 조성물로 형성되는 컬러필터
KR20080046560A (ko) * 2006-11-22 2008-05-27 도쿄 오카 고교 가부시키가이샤 감광성 수지 조성물 및 액정 패널용 스페이서
WO2009028360A1 (fr) * 2007-08-24 2009-03-05 Toray Industries, Inc. Composition photosensible, film durci formé à partir de celle-ci et dispositif à film durci
KR20090039930A (ko) * 2007-10-19 2009-04-23 동우 화인켐 주식회사 포토레지스트 조성물 및 이를 이용한 패턴 형성 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060121694A (ko) * 2005-05-24 2006-11-29 도쿄 오카 고교 가부시키가이샤 감광성 조성물 및 이 감광성 조성물로 형성되는 컬러필터
KR20080046560A (ko) * 2006-11-22 2008-05-27 도쿄 오카 고교 가부시키가이샤 감광성 수지 조성물 및 액정 패널용 스페이서
WO2009028360A1 (fr) * 2007-08-24 2009-03-05 Toray Industries, Inc. Composition photosensible, film durci formé à partir de celle-ci et dispositif à film durci
KR20090039930A (ko) * 2007-10-19 2009-04-23 동우 화인켐 주식회사 포토레지스트 조성물 및 이를 이용한 패턴 형성 방법

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