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WO2013080072A3 - Solarzelle und verfahren zum herstellen einer solarzelle - Google Patents

Solarzelle und verfahren zum herstellen einer solarzelle Download PDF

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Publication number
WO2013080072A3
WO2013080072A3 PCT/IB2012/056412 IB2012056412W WO2013080072A3 WO 2013080072 A3 WO2013080072 A3 WO 2013080072A3 IB 2012056412 W IB2012056412 W IB 2012056412W WO 2013080072 A3 WO2013080072 A3 WO 2013080072A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cell
emitter
contact
producing
terminal structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2012/056412
Other languages
English (en)
French (fr)
Other versions
WO2013080072A2 (de
Inventor
Michael Grimm
Wilhelm Stein
Martin PLETTIG
Giuseppe Citarella
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meyer Burger Germany GmbH
Original Assignee
Roth and Rau AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth and Rau AG filed Critical Roth and Rau AG
Priority to EP12812364.3A priority Critical patent/EP2786420A2/de
Priority to CN201280068873.5A priority patent/CN104185904A/zh
Priority to US14/362,092 priority patent/US20150027527A1/en
Publication of WO2013080072A2 publication Critical patent/WO2013080072A2/de
Publication of WO2013080072A3 publication Critical patent/WO2013080072A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/906—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells characterised by the materials of the structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/93—Interconnections
    • H10F77/933—Interconnections for devices having potential barriers
    • H10F77/935—Interconnections for devices having potential barriers for photovoltaic devices or modules
    • H10F77/937—Busbar structures for modules
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)

Abstract

Die vorliegende Erfindung betrifft eine Solarzelle sowie ein Verfahren zum Herstellen einer solchen Solarzelle, bei welchen ein Solarzellenkern hergestellt wird, in welchem bei Lichteinfall in einer Vorderseite der Solarzelle eine Ladungstrennung und ein Ladungstransport zu einem Emitter und zu einer auf einer dem Emitter gegenüber liegenden Seite der Solarzelle befindlichen Basis vorgesehen ist; eine elektrisch leitfähige Emitter-Kontaktstruktur in Form von Kontaktfingern hergestellt wird, die in direktem elektrischen Kontakt mit dem Emitter sind; und eine lötbare metallische Emitter- Anschlussstruktur in Form von Stromschienen hergestellt wird, die in direktem elektrischen Kontakt mit der Emitter-Kontaktstruktur sind und die Kontaktfinger der Emitter-Kontaktstruktur quer verbinden; wobei Emitter und Basis auf gegenüber liegenden Seiten der Solarzelle kontaktiert werden. Es ist die Aufgabe der vorliegenden Erfindung, eine einfach aufgebaute und zuverlässig funktionierende Solarzelle der genannten Gattung sowie ein entsprechendes Solarzellenherstellungsverfahren vorzuschlagen, mit welchen Solarzellenherstellungskosten verringerbar sind. Diese Aufgabe wird durch eine Solarzelle und ein Solarzellenherstellungsverfahren der genannten Gattung gelöst, wobei die lötbare metallische Emitter-Anschlussstruktur wenigstens aus Nickel, einer Nickel-Legierung, Zinn und/oder einer Zinn-Legierung hergestellt wird und auf diese Emitter-Anschlussstruktur ein Lot oder eine mit einem Lot bedeckte, elektrisch leitfähige Bandanordnung aufgebracht wird.
PCT/IB2012/056412 2011-12-01 2012-11-14 Solarzelle und verfahren zum herstellen einer solarzelle Ceased WO2013080072A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP12812364.3A EP2786420A2 (de) 2011-12-01 2012-11-14 Solarzelle und verfahren zum herstellen einer solarzelle
CN201280068873.5A CN104185904A (zh) 2011-12-01 2012-11-14 太阳能电池和用于制造太阳能电池的方法
US14/362,092 US20150027527A1 (en) 2011-12-01 2012-11-14 Solar Cell and Process for Producing a Solar Cell

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011055912A DE102011055912A1 (de) 2011-12-01 2011-12-01 Solarzelle und Verfahren zum Herstellen einer Solarzelle
DE102011055912.4 2011-12-01

Publications (2)

Publication Number Publication Date
WO2013080072A2 WO2013080072A2 (de) 2013-06-06
WO2013080072A3 true WO2013080072A3 (de) 2013-11-21

Family

ID=47520183

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2012/056412 Ceased WO2013080072A2 (de) 2011-12-01 2012-11-14 Solarzelle und verfahren zum herstellen einer solarzelle

Country Status (6)

Country Link
US (1) US20150027527A1 (de)
EP (1) EP2786420A2 (de)
CN (1) CN104185904A (de)
DE (1) DE102011055912A1 (de)
TW (1) TW201340361A (de)
WO (1) WO2013080072A2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9153729B2 (en) * 2012-11-26 2015-10-06 International Business Machines Corporation Atomic layer deposition for photovoltaic devices
WO2017027769A1 (en) * 2015-08-13 2017-02-16 3M Innovative Properties Company Photovoltaic cell with frontside busbar tape on narrow front busbars
WO2017113299A1 (zh) * 2015-12-31 2017-07-06 中海阳能源集团股份有限公司 一种背电极异质结太阳能电池及其制备方法
CN109346560A (zh) * 2018-11-27 2019-02-15 江苏拓正茂源新能源有限公司 一种太阳能电池芯的制备方法
CN111900216A (zh) * 2020-09-10 2020-11-06 陕西众森电能科技有限公司 一种接触太阳电池导电表面的电极结构及其制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2068372A1 (de) * 2006-09-28 2009-06-10 Sanyo Electric Co., Ltd. Solarbatteriemodul
US20110048492A1 (en) * 2009-08-31 2011-03-03 Sanyo Electric Co., Ltd. Solar cell and solar cell module

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4542258A (en) * 1982-05-28 1985-09-17 Solarex Corporation Bus bar interconnect for a solar cell
JP2744847B2 (ja) * 1991-06-11 1998-04-28 エイエスイー・アメリカス・インコーポレーテッド 改良された太陽電池及びその製造方法
JP2004146464A (ja) * 2002-10-22 2004-05-20 Sharp Corp 太陽電池およびその製造方法、太陽電池用インターコネクター、ストリングならびにモジュール
JP2008135654A (ja) * 2006-11-29 2008-06-12 Sanyo Electric Co Ltd 太陽電池モジュール
US8101231B2 (en) * 2007-12-07 2012-01-24 Cabot Corporation Processes for forming photovoltaic conductive features from multiple inks
DE102009016268A1 (de) 2008-10-31 2010-05-12 Bosch Solar Energy Ag Solarzelle und Verfahren zu deren Herstellung
CN101740646A (zh) * 2009-12-08 2010-06-16 云南师范大学 隐蔽型发射极硅太阳电池
US8691694B2 (en) * 2009-12-22 2014-04-08 Henry Hieslmair Solderless back contact solar cell module assembly process
DE102010014554A1 (de) 2010-04-01 2011-10-06 Somont Gmbh Standardsolarzelle mit kleiner Abschattung
DE102011001799B4 (de) * 2011-02-02 2018-01-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines Halbleiterbauelements sowie Halbleiterbauelement

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2068372A1 (de) * 2006-09-28 2009-06-10 Sanyo Electric Co., Ltd. Solarbatteriemodul
US20110048492A1 (en) * 2009-08-31 2011-03-03 Sanyo Electric Co., Ltd. Solar cell and solar cell module

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GUY BEAUCARNE ET AL: "Summary of the Third Workshop on Metallization for Crystalline Silicon Solar Cells", ENERGY PROCEDIA, vol. 21, 25 October 2011 (2011-10-25) - 26 October 2011 (2011-10-26), pages 2 - 13, XP028493612, ISSN: 1876-6102, [retrieved on 20120615], DOI: 10.1016/J.EGYPRO.2012.05.002 *
TOUS L ET AL: "Large Area Copper Plated Silicon Solar Cell Exceeding 19.5% Efficiency", ENERGY PROCEDIA, vol. 21, 25 October 2011 (2011-10-25) - 26 October 2011 (2011-10-26), pages 58 - 65, XP028493618, ISSN: 1876-6102, [retrieved on 20120615], DOI: 10.1016/J.EGYPRO.2012.05.008 *
VERENA JUNG ET AL: "Long-term stable encapsulated solder joints on an Al/Ni:V/Ag metallization for silicon solar cells", ENERGY PROCEDIA, vol. 21, 25 October 2011 (2011-10-25) - 26 October 2011 (2011-10-26), pages 84 - 91, XP028493621, ISSN: 1876-6102, [retrieved on 20120615], DOI: 10.1016/J.EGYPRO.2012.05.011 *

Also Published As

Publication number Publication date
WO2013080072A2 (de) 2013-06-06
DE102011055912A1 (de) 2013-06-06
EP2786420A2 (de) 2014-10-08
US20150027527A1 (en) 2015-01-29
CN104185904A (zh) 2014-12-03
TW201340361A (zh) 2013-10-01

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