WO2013075269A1 - High-voltage ac light emitting diode structure - Google Patents

Abstract

Provided is a high-voltage AC light emitting diode structure (100), including: a circuit substrate (200); and a plurality of high-voltage LED chips (300). The high-voltage LED chip (300) includes: a first substrate (21), an adhesive layer (22), a first Ohm connection layer (23), an epitaxy layer (24), a first insulation layer (25), at least two first conductive plates (26), at least two second conductive plates (27), and a second substrate (50). A high-voltage LED chip (300) with the wafer level can be combined with the circuit substrate (200) to manufacture a small high-voltage AC light emitting diode structure (100).

Description

 High voltage AC light emitting diode structure

 The present invention relates to a high voltage alternating current light emitting diode structure, and more particularly to a high voltage alternating current light emitting diode structure for use in illumination. Background technique

 U.S. Patent No. 6,853,011 discloses a luminescent epitaxial layer structure comprising a temporary substrate having a light absorbing type at one end and a transparent transparent substrate adhered to the other end by a benzene ring . The portion of the light absorbing temporary substrate is then removed. The LED structure then forms a connection channel for connecting the first ohmic contact electrode and an insulating trench to separate the active layer of the LED structure into two portions. Then, a second ohmic contact electrode is formed on the cladding layer, a bonding metal layer is filled in the first via hole and successfully formed on the second ohmic contact electrode. Since the two bonding metal layers have the same height, the resulting LED structure can be more conveniently applied to the flip chip structure.

 U.S. Patent No. 6,998,642 discloses a semiconductor structure having two light emitting diodes in a series connected state. The above semiconductor structure includes two light emitting diodes having the same stacked structure, and is isolated by insulating trenches. The stacked structure forms a thermally conductive substrate from the bottom; an insulating protective layer; a metal adhesion layer; a reflective protective layer; a P-type ohmic connection epitaxial layer; an upper cladding layer; an active layer and a lower cladding layer . Two P-type ohmic contact metal electrodes belonging to two light emitting diodes are formed on an interface between the reflective protective layer and the ohmic contact epitaxial layer, and are buried in the reflective protective layer.

 However, although US Patent Publication No. 6, 85 3, 01 1 can be applied to a flip chip structure, if there is no second substrate, the connection between the two light emitting diodes cannot be performed, and the flip chip process is performed. When it is necessary to process multiple chips, the process complexity is increased. Although US Patent Publication No. 6,998,642 can electrically connect two LEDs, the use of metal for bonding must be achieved by a complicated process, which is prone to problems in production efficiency and cost. .

 In the above prior art, most of the light-emitting diodes used are general diodes fabricated in a non-wafer-level process, and it is not considered to connect a plurality of light-emitting diodes in series, parallel or series-parallel to meet the requirements of use, so how to achieve It is an important issue to manufacture high-voltage AC light-emitting diodes in a simple and convenient manner. Summary of the invention

The main object of the present invention is to overcome the defects of the existing light emitting diodes and provide a high voltage alternating current light emitting diode structure. The technical problem to be solved is to make a small volume. High voltage AC LED structure. The invention provides a high-power AC light-emitting diode structure: it comprises:, a circuit! ^ board; and a plurality of high voltage LED chips. The high voltage LED chip comprises: a first substrate; an adhesive layer; a first ohmic connection layer; an epitaxial layer; a first insulating layer; at least two first conductive plates; at least two second conductive plates; and a second substrate. The invention is to combine a low-cost circuit substrate with a high-voltage LED chip of a wafer level process to fabricate a small-sized high-voltage AC light-emitting diode structure.

 The invention provides a high voltage alternating current light emitting diode structure, a package-circuit substrate thereof, and a plurality of high voltage LED chips fixed and electrically connected to the circuit substrate and forming a series connection of the high voltage LED chips by the circuit substrate. And a "high voltage LED chip ^: a first substrate having a first surface and a second surface; an adhesive layer formed on the first surface; at least two first ohmic connecting layers formed on the adhesive layer At least two epitaxial layers, a first trench is formed between any two epitaxial layers, each epitaxial layer has: a lower cladding layer formed on a first ohmic connection layer; and an active layer formed on the lower cladding layer And a top coating layer formed on the active layer; a first insulating layer covering each of the first ohmic connecting layer and the exposed surface of each of the upper cladding layers, and formed on any two Between the first ohmic connection layers, the first insulating layer is formed with a first opening and a second opening at each of the upper cladding layer and each of the first ohmic connecting layers; at least two first Conductive plates, formed separately Each of the first openings is electrically connected to an upper cladding layer; at least two second conductive plates are respectively formed in each of the second openings and electrically connected to a first ohmic connection layer; a second substrate having a third surface, the third surface is formed with at least two third conductive plates and at least two fourth conductive plates, and the second substrate is formed with a plurality of circuit structures for electrically connecting the above a third conductive plate and the fourth conductive plate, and each of the third conductive plates and each of the fourth conductive plates are electrically connected to the corresponding first conductive plate and the second conductive plate by solder joints, and first The substrate is a transparent substrate and the adhesive layer is a transparent adhesive layer, and a reflective layer is formed on the third surface at portions other than the third conductive plate and the fourth conductive plate.

The invention further provides a high voltage alternating current light emitting diode structure, which comprises a substrate and a plurality of high voltage LED chips, which are fixedly and electrically connected to the circuit substrate and form a series connection of the high voltage LED chips by the circuit substrate. The high voltage LED chip comprises: a first substrate having a first surface and a second surface; an adhesive layer formed on the first surface; at least two first ohmic connecting layers formed on the adhesive layer; at least two The epitaxial layer, each epitaxial layer has: a lower cladding layer formed on a first ohmic connection layer; an active layer formed on the lower cladding layer; and an upper cladding layer formed on the active layer _; And a second trench extending vertically through the upper cladding layer and the active layer, and partially extending through the lower cladding layer; a second insulating layer covering each of the upper cladding layers and formed on any two epitaxial layers and Between any two first ohmic connection layers, a second insulating layer is formed on the upper cladding layer and inside the second trench, and a third opening and a fourth opening are respectively formed; at least two fifth conductive plates are respectively formed on Inside each third opening, and electricity Sexually connected to an upper cladding layer; and at least two sixth conductive plates, Optionally, it is formed in each of the fourth openings, and has an extending portion extending downwardly. The extending portion vertically penetrates the epitaxial layer and is electrically connected to the first ohmic connecting layer.

 By the implementation of the present invention, at least the following advancements can be achieved:

 1. A high-voltage LED chip with a wafer-level process can be combined with a lower-cost circuit substrate to make a small-sized high-voltage AC LED structure.

 2. The high voltage AC LED structure can be formed more easily and quickly.

 3. A more diverse high voltage AC LED structure can be combined.

 In order to make the technical content of the present invention familiar to those skilled in the art and to implement the present invention, and in light of the disclosure, the scope of the invention and the drawings, the related objects and advantages of the present invention can be easily understood by those skilled in the art. The detailed features and advantages of the present invention will be described in detail in the embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

 FIG. 1A is a schematic structural diagram of a high voltage alternating current light emitting diode according to an embodiment of the present invention. FIG. 1B is a series equivalent circuit diagram of an embodiment of the present invention.

 2A shows an equivalent circuit structure 1 after series connection and parallel connection according to an embodiment of the present invention.

 FIG. 2B is an equivalent circuit structure 2 of a series connection and a parallel connection according to an embodiment of the present invention.

 3 is a cross-sectional view of a high voltage LED chip according to an embodiment of the present invention, which is completed by unit division.

 Fig. 4A is a view showing an embodiment of the manufacturing method before the first etching in Fig. 3;

 Fig. 4B is a view showing an embodiment of a manufacturing method in which the second etching is performed again after completion of Fig. 4A.

 FIG. 5 is a cross-sectional view showing the embodiment of FIG. 3 after the first insulating layer and the conductive plate are further completed.

 6A is a cross-sectional view of a high voltage LED chip further incorporating a second substrate in accordance with an embodiment of the present invention.

 Figure 6B is a top plan view of Figure 6A.

 Fig. 6C is an equivalent circuit diagram of Fig. 6A.

 Figure 7A is a cross-sectional view of a high voltage LED chip of the present invention further forming a first conductor layer.

 Figure 7B is a top plan view of Figure 7A.

 Figure 8 is a cross-sectional view showing a high voltage LED chip of the present invention after cell division, epitaxial layer division, and second trench fabrication.

 Figure 9 is a cross-sectional view showing a high voltage LED chip of the present invention further incorporating a second substrate.

 Figure 10 is a cross-sectional view showing a high voltage LED chip of the present invention further forming a second conductor layer.

11A to 11G are respectively equivalent circuit embodiments of various high voltage LED chips of the present invention Figure.

 [Main component symbol description]

 100 high voltage AC LED structure 200 circuit board

 300, 301, 302 high voltage LED chip 400 series circuit

 21 first substrate

 211 first surface 212 second surface

 22 adhesive layer 23, 23, first ohmic connecting layer

 231 dews 24th day 3⁄4■

 241 undercoat 242 layer

 243 upper coating 25 first insulation

 251 first opening 252 second opening

 26 first conductive plate 27 second conductive plate

 28 LEDs 291 First trench

 292 second ohmic connection layer 293 first conductor layer

 31 second insulating layer 32 fifth conductive plate

 33 sixth conductive plate 331 extension

 34 second groove 35 third opening

 36 fourth opening 37 second conductor layer

 50 second substrate 51 third surface

 52 third conductive plate 53 fourth conductive plate

 60 solder joints A1 , , A2 , A3 units The best way to achieve the invention

 In order to further illustrate the technical means and functions of the present invention for achieving the intended purpose of the present invention, the specific embodiments, structures, features and structures of the high voltage AC light emitting diode structure according to the present invention will be described below with reference to the accompanying drawings and preferred embodiments. Its efficacy, detailed description as follows.

 FIG. 1A is a schematic structural diagram of a high voltage alternating current light emitting diode according to an embodiment of the present invention. FIG. 1B is a series equivalent circuit diagram of an embodiment of the present invention. 2A is an equivalent circuit structure 1 of a series connection and parallel connection according to an embodiment of the present invention. 2B shows an equivalent circuit structure 2 after series connection and parallel connection according to an embodiment of the present invention.

 As shown in FIG. 1A, this embodiment is a high voltage AC LED structure 100, which includes: a circuit substrate 200; and a plurality of high voltage LED chips 300. The high voltage LED chip 300 is a high voltage LED chip 301 and a high voltage LED chip 302 representing different embodiments below.

The circuit substrate 200 can be an aluminum substrate or a ceramic substrate. When the high voltage LED chip 300 is bonded to the circuit substrate 200, the circuit substrate 200 is much larger than the high voltage LED chip 300, so that the circuit substrate 200 can be supplied with a high voltage. The circuit connection required for the LED chip 300, By designing a variety of series-parallel circuits, a more diverse high-voltage AC LED structure 100 can be combined more easily and quickly.

 In addition to providing circuit connections, each substrate 200 also provides heat dissipation. Furthermore, when the circuit substrate 200 is a ceramic substrate, a plurality of heat conducting columns or a plurality of conductors may be further disposed in the substrate of the ceramic substrate, so that the heat generated by the operation of the high voltage LED chip 300 is effectively transmitted, and at the same time The electrodes of the high voltage LED chip 300 can smoothly extend to the other side of the ceramic substrate.

 As shown in FIG. 1B, a plurality of high voltage LED chips 300 are fixedly and electrically connected to the circuit substrate 200 and connected to the circuit board 200 to form a series circuit 400. When the high voltage LED chip 300 is a high voltage LED chip 300 in the form of an alternating current, it can become a high voltage alternating current light emitting diode structure 100, which is the most basic structure of the series circuit 400 of the present embodiment.

 As shown in FIG. 2A and FIG. 2B, in addition to the above-mentioned most basic structure, any two high voltage LED chips 300 may be further connected to each other in parallel, so that the series circuit 400 further has at least one parallel connection, and the series circuit 400 may further Further, at least one series circuit 400 is connected in parallel to thereby combine various high voltage AC circuits.

 The structure of the high voltage LED chip 300 will be described in detail below, and in the following embodiments, the respective layer structures of the high voltage LED chip 300 are fabricated by conventional semiconductor molding techniques, and the details thereof will not be described again. In order to avoid lengthy descriptions, the terms "etching process" or "etching method" are specifically defined as the abbreviation covering the entire complete yellow light process. Further, the high voltage LED chip 300 can form a multi-dimensional array, which is not limited to the number in the embodiment, which is described above.

[First Embodiment of High Voltage LED Chip 300]

 3 is a cross-sectional view of a high voltage LED chip according to an embodiment of the present invention, which is completed by unit division. Fig. 4A is a view showing an embodiment of the manufacturing method before the first etching in Fig. 3. Fig. 4B is a view showing an embodiment of a method of fabricating the second etching again after completion of Fig. 4A. Fig. 5 is a cross-sectional view showing the embodiment of Fig. 3 after further completing the first insulating layer and the conductive plate. 6A is a cross-sectional view of a high voltage LED chip further incorporating a second substrate in accordance with an embodiment of the present invention. Figure 6B is a top plan view of Figure 6A. Fig. 6C is an equivalent circuit diagram of Fig. 6A. Figure 7A is a cross-sectional view of a high voltage LED chip of the present invention further forming a first conductor layer. Figure 7B is a top plan view of Figure 7A.

 Generally, the high-voltage LED chip 300 is fabricated on a wafer by a semiconductor process in which a pre-process high-voltage LED chip that has not been subjected to cell division and that has not completed other insulating layers and conductive plates is formed. However, when the actual high voltage LED chip 300 is applied, since the thickness of the wafer is too thick and has an opaque property, it cannot be applied and must be removed. Therefore, the wafer is only a temporary substrate in the process of manufacturing the high voltage LED chip 300, that is, a temporary substrate.

In the method of generally removing the temporary substrate, the etching method is the most commonly used one. In order to protect the high voltage LED chip 300 during the etching process, the high voltage LED chip 300 is not caused by excessive etching. The damage is therefore set to an etch stop layer. Most of the etch stop layer is also etched away during the etching process of the wafer. By the action of the etch stop layer, the effect of protecting the high voltage LED chip 300 can be achieved. After the above process is completed, a high-voltage LED chip of the pre-process can be produced. As shown in FIG. 3 to FIG. 7B , the embodiment is a high voltage LED chip 301 comprising: a first substrate 21 , an adhesive layer 22 , at least two first ohmic connection layers 23 , and at least two epitaxial layers 24 . a first insulating layer 25, at least two first conductive plates 26, and at least two second conductive plates 27.

 The first substrate 21 has a first surface 211 and a second surface 212. The first substrate 21 is mainly used to support the entire high voltage LED chip 301. The first substrate 21 may be a single crystal, a polycrystalline or an amorphous structure substrate, such as glass (glas s), sapphire (sapphi re), silicon carbide (SiC), gallium phosphide (GaP), phosphorus arsenic. A substrate made of a material such as gallium (GaAsP), zinc selenide (ZnSe), zinc sulfide (ZnS) or strontium sulfide (AmSSe). In addition, the first substrate 21 may be a transparent substrate or a non-transparent substrate, which is mainly considered according to the light-emitting direction of the high-voltage LED chip 301 or the design of the reflective layer, so as to simultaneously guide the upward/downward two-way. When the light is emitted, the first substrate 21 must be a transparent substrate.

 The adhesive layer 22 is formed on the first surface 211 for bonding the first substrate 21 and the first ohmic connecting layer 23. The adhesive layer 22 may be selected from the group consisting of B-s tagged benzocyclobutene (BCB), an epoxy tree, a stone gelatin (si 1 icone), and a polymethyl methacry. , PMMA), a polymer and a spin-on glas s (S0G). The adhesive layer 22 may be a transparent adhesive layer 22 or a non-transparent adhesive layer 22, which is also considered in accordance with the light-emitting direction of the high-voltage LED chip 301 or the design of the reflective layer. To simultaneously guide the upward/downward bidirectional light, the adhesive layer is adhered. Layer 22 must be a transparent adhesive layer 22.

 As shown in FIG. 3, the light emitting diode 28 includes a first ohmic connecting layer 23 and an epitaxial layer 24, which are disposed on the same first substrate 21 and the adhesive layer 22, so that the unit split only needs to be for the first ohmic connecting layer. 23 and the epitaxial layer 24 are divided, and units such as Al, A2, A3, ... are formed.

 As shown in FIG. 4A, a first ohmic connection layer 23 is formed on the adhesion layer 22, and the first ohmic connection layer 23 may be a P-type ohmic connection layer, and a first ohmic connection layer 23 originally formed on the wafer, It can be etched to distinguish different units.

 As shown in FIG. 3, the epitaxial layer 24, which is a single LED unit 28, is also etched to distinguish different cells. The epitaxial layer 24 is also formed by an etching process to form the first trench 291. The formation of the first trench 291 will cause the first ohmic connection layer 23 to produce a partially exposed exposed portion 231, thereby facilitating the arrangement of the second conductive plate 27, and also because of the arrangement of the second conductive plate 27, The unit's light-emitting diodes 28 can be easily designed in series/parallel, thus enabling the high-voltage LEDs 28 to be easily fabricated.

3, shown in FIGS. ⁴ A and 4B, the first ohmic contact layer and a first dividing unit 23 making trenches 291, can be achieved by means of different etching steps. In many etching steps, In one etching, a gap of the same size and relative position between the two first ohmic connecting layers 23 is first etched, and the second etching is performed by etching the first trench 291 after the first etching. The method makes the process easier.

 As shown in FIG. 5, each epitaxial layer 24 has at least: a lower cladding layer 241, an active layer 242, and an upper cladding layer 243. Each of the underlying cladding layers 241 is formed on a first ohmic connecting layer 23, and the lower cladding layer 241 may be a P-type galvanized aluminum indium gallium (Al Ga l nP) cladding layer. An active layer 242 is formed on the lower cladding layer 241, which may be a single heterostructure (Single Hetero - s tructure, SH), a double Hetero - s tructure (DH) or A multi-quantum well structure (Mul t iple Quantum Wel ls, MQW) „ an upper cladding layer 243 formed on the active layer 242, and the upper cladding layer 243 may be an N-type aluminum indium gallium arsenide coating layer. A second ohmic connection layer 292 may be further formed between the cladding layer 243 and the first conductive plate 26.

 The first insulating layer 25 is made of, for example, silicon oxide (S iO), covering the exposed surface of each of the first ohmic connecting layer 23 and each of the upper cladding layers 243, and is formed on any two first ohmic connections. Layer 23. By the arrangement of the first insulating layer 25, in addition to completely insulating the LEDs 28 of different units without affecting each other, the LEDs 28 can be protected from the external environment, such as moisture or moisture, thereby detracting from the life.

 A first opening 251 and a second opening 252 are formed in each of the upper insulating layer 25 and the exposed portion 231 of each of the first ohmic connecting layers 23, and the first opening 251 is formed in the first opening 251. And the second opening 252 is formed by etching after the first insulating layer 25 is completed.

 The first conductive plates 26 are respectively formed in the first openings 251 of each unit and electrically connected to the corresponding upper cladding layers 243. The second conductive plates 27 are respectively formed in the second openings 252 of each unit and electrically connected to the corresponding first ohmic connecting layers 23. The first conductive plate 26 and the second conductive plate 27 are disposed to provide power so that the epitaxial layer 24 can receive power to generate light.

 When the high voltage LED chip 301 is designed as a face up structure. At this time, the first substrate 21 is designed as a transparent substrate, and the adhesive layer 22 is designed as a transparent adhesive layer 22, and a reflective layer is formed on the second surface 212 of the first substrate 21 (not shown). The light emitted by the epitaxial layer 24 can be reflected by the reflective layer, so that the high-voltage LED chip 301 can achieve better light-emitting efficiency. In addition, the adhesive layer 22 may be designed as a transparent adhesive layer 22, and a reflective layer (not shown) may be formed between the first substrate 21 and the adhesive layer 22, so that light reflection can also be achieved. The same effect makes the high voltage LED chip 301 achieve better light extraction efficiency.

As shown in FIG. 6A to FIG. 6C, the high voltage LED chip 301 includes a second substrate 50, so that a flip-chip structure can be produced. In the flip chip structure, the first substrate 21 is a transparent substrate and the adhesive layer 11 is a transparent adhesive layer 11. A second substrate 50 having at least a third surface 51, the third surface ⁵¹ is formed with at least two third conductive plate ^52, and at least two fourth conductive plate 53, each A third conductive plate 52 and a fourth conductive plate 53 are electrically connected to the corresponding first conductive plate 26 and second conductive plate 27 by solder joints 60, respectively.

 Between the third conductive plate 52 and the fourth conductive plate 53 , in addition to directly expanding the area of the conductive plate to electrically connect each other, a plurality of circuit structures may be formed on the second substrate 50 (not shown). ), so that the third conductive plate 52 and the fourth conductive plate 53 are electrically connected. A complicated circuit structure can be formed by the above connection method. The advantage of using the second substrate 50 will allow the serial/parallel circuit between the different light emitting diodes 28 to be performed on the second substrate 50. Since the area and thickness of the second substrate 50 can be made relatively flexible, it is sufficient to cope with a very complicated circuit structure. The application of the high voltage LED chip 301 will be more versatile when complex circuit structures are available.

 The second substrate 50 may be a silicon substrate, a printed circuit board / a printed circuit board (PCB) or a ceramic substrate (ceramic subs tra te). For example: alumina (A1203), aluminum nitride (A1N), beryllium oxide (BeO), low temperature co-existing ceramics (LTCC) or high temperature co-fired multi-layer ceramics (High Temperature Cof i Red Ceramic, HTCC)...etc.

 In the design of the flip chip structure, in order to provide the light emitting diode 28 with better light extraction efficiency, on the third surface 51 of the second substrate 50, at portions other than the third conductive plate 52 and the fourth conductive plate 53, A reflective layer is further formed. A reflective layer may also be formed on the exposed surface of the first insulating layer 25, that is, the first insulating layer 25.

 Each of the above reflective layers may be selected from one of aluminum (Al), silver (Ag), and gold (Au). It should be noted that when the reflective layer is a conductive material, the reflective layer cannot be in contact with the third conductive plate 52 or the fourth conductive plate 53, nor with the first conductive plate 26 or the second conductive plate 27. Contact, and the reflective layer preferably maintains a certain gap with each of the conductive plates to avoid short circuit between the conductive plates.

 As shown in FIG. 7A and FIG. 7B, the high voltage LED chip 301 further includes a first conductor layer 293 formed with at least one conductor and covering the first insulating layer 25, and the two ends of each conductor are respectively electrically connected. The second conductive plate 27 and the first conductive plate 26 are connected to different units. In this way, different ^^ and tube 28 can be easily connected in series/and supported by the first color edge layer 25, so that the first conductor layer 293 can also perform complicated circuit layout design.

 Thereby, the high-voltage LED chip 301 can be configured by the reverse connection of at least two light-emitting diodes 28 to form an AC-type high-voltage LED chip 301, and then the AC-type high-voltage LED chip 301 is provided through the circuit substrate 200. The circuit is connected to form a high voltage AC light emitting diode structure having a high voltage LED chip 301 of a series, parallel or series-parallel AC type.

[High Voltage LED Chip Second Embodiment]

FIG. 8 is a cross-sectional view showing a high voltage LED chip of the present invention after cell division, epitaxial layer division, and second trench fabrication. Figure 9 is a high voltage LED chip of the present invention A step-by-step embodiment of a second substrate is combined. Figure 10 is a cross-sectional view showing a high voltage LED chip of the present invention further forming a second conductor layer. 11A to 11G are diagrams showing an equivalent circuit embodiment of various high voltage LED chips of the present invention, respectively.

 As shown in FIG. 8 to FIG. 10, the embodiment is a high voltage LED chip 302, comprising: a first substrate 21, an adhesive layer 22, at least two first ohmic connection layers 23, and at least two epitaxial layers. 24. A second insulating layer 31, at least two fifth conductive plates 32, and at least two sixth conductive plates 33.

 The high voltage LED chip 302 of the present example can be combined with the first substrate 21 coated with the adhesive layer 22 and the front process light emitting diode 28 formed on the wafer, similarly to the first embodiment. Then, the temporary substrate and the etch stop layer are removed by etching or the like to obtain a high voltage LED chip which has not been subjected to cell division.

 The first substrate 21 has a first surface 211 and a second surface 212. The first substrate 21 is mainly used to support the entire high voltage LED chip 302. The first substrate 21 may be a single crystal, a polycrystalline or an amorphous structure substrate, such as glass, sapphire, silicon carbide, gallium phosphide, gallium arsenide, zinc selenide, zinc sulfide or antimony sulfide. . Substrate made of materials. In addition, the first substrate 21 can be a transparent substrate or a non-transparent substrate, which is mainly considered according to the light-emitting direction of the high-voltage LED chip 302 or the design of the reflective layer, so as to simultaneously guide the upward/downward two-way. When the light is emitted, the first substrate 21 must be a transparent substrate.

 The adhesive layer 22 is formed on the first surface 211 for bonding the first substrate 21 and the first ohmic connecting layer 23. The adhesive layer 22 is selected from the group consisting of monophenylene butylene, an epoxy resin, a silica gel, a polydecylmercaptoacrylate, a polymer, and a spin-on glass. The adhesive layer 22 may be a transparent adhesive layer 22 or a non-transparent adhesive layer 22, which is also considered according to the light-emitting direction of the high-voltage LED chip 302 or the design of the reflective layer. If the upward/downward bidirectional light is simultaneously guided, the adhesive layer is adhered. Layer 22 must be a transparent adhesive layer 22.

 As shown in FIG. 8, each of the high voltage LED chips 302 of the present embodiment also shares the first substrate 21 and the adhesive layer 22. Therefore, the cell division is also divided only for the first ohmic connection layer 23 and the epitaxial layer 24, and is divided. Units such as Al, A2, A3, . . . may also be formed later.

 The first ohmic connection layer 23, is formed on the adhesive layer 22. The first ohmic connection layer 23 may be a P-type ohmic connection layer. The first ohmic connection layer 23, which was originally formed on the wafer, can be etched to distinguish different cells.

 The epitaxial layer 24, which is an LED unit, is also etched to distinguish different cells. Each of the epitaxial layers 24 has a lower cladding layer 241, an active layer 242, an upper cladding layer 243, and a second trench 34.

Each of the underlying cladding layers 241 is formed on a first ohmic connecting layer 23, and the lower cladding layer 241 is a P-type aluminum indium gallium arsenide coating layer. The active layer 242 is formed on the lower cladding layer 241, which may be a single heterostructure, a double heterostructure or a multiple quantum well structure. The upper cladding layer 243 is formed on the active layer 242, and the upper cladding layer 243 may be an N-type aluminum indium gallium arsenide coating layer. The second trench 34 is formed by etching. The second trench 34 vertically penetrates the upper cladding layer 243 and the active layer 242, and partially penetrates the lower cladding layer 241, and the gap between the second trenches 34 is The active layer 242 and the upper cladding layer 243 on both sides of the second trench 34 can be electrically isolated. For the convenience of manufacturing in the process, the second trench 34 may be formed around the periphery of the sixth conductive plate 33 so that the active layer 242 can be effectively electrically isolated, so that the extending portion 331 of the sixth conductive plate 33 can The power is smoothly conducted to the first ohmic connection layer 23, . Further, in order to make the subsequent process easier to operate, when the second insulating layer 31 is formed, the second trench 34 may be filled with the second insulating layer 31.

 The second insulating layer 31 is made of, for example, silicon oxide, covering the exposed surface of each of the upper cladding layers 243, and formed between any two epitaxial layers 24 and any two first ohmic connecting layers 23. By the arrangement of the second insulating layer 31, in addition to completely ignoring the LEDs of different units without affecting each other, the LED can be protected from the external environment, such as moisture or moisture, thereby detracting from the life. The second insulating layer 31 defines a third opening 35 and a fourth opening 36 on the upper cladding layer 243 and the second trench 34. The third opening 35 and the fourth opening 36 are in the first After the second insulating layer 31 is completed, it is formed by etching.

 The fifth conductive plates 32 are respectively formed in each of the third openings 35 and electrically connected to the corresponding upper cladding layer 243. A second ohmic connection layer 292 may be formed between the upper cladding layer 243 and the fifth conductive plate 32. The sixth conductive plate 33 is formed in each of the fourth openings 36, and has an extending portion 331 extending downwardly. The extending portion 331 vertically penetrates the epitaxial layer 24 and is electrically connected to the corresponding first ohm. Connection layer 23, . The fifth conductive plate 32 and the sixth conductive plate 33 are disposed to supply electric power so that the epitaxial layer 24 can receive power to generate light.

 When the high voltage LED chip 302 is designed as an upper structure. At this time, the first substrate 21 is designed as a transparent substrate, and the adhesive layer 22 is designed as a transparent adhesive layer 22, and a reflective layer is formed on the second surface 212 of the first substrate 21, which can be used by The reflective layer reflects the light emitted by the epitaxial layer 24, so that the high voltage LED chip 302 can achieve better light extraction efficiency. In addition, it is also possible to design only the adhesive layer 22 as a transparent adhesive layer 22, and to form a reflective layer between the first substrate 21 and the adhesive layer 22, so that the light reflection effect can also be achieved. The high voltage LED chip 302 achieves better light extraction efficiency.

 As shown in Fig. 9, the high voltage LED chip 302 further includes a second substrate 50, which produces a flip chip structure. In the flip chip structure, the first substrate 21 is a transparent substrate and the adhesive layer 22 is a transparent adhesive layer 22. The second substrate 50 has at least one third surface 51. The third surface 51 is formed with at least two third conductive plates 52 and at least two fourth conductive plates 53, each of the third conductive plates 52 and the fourth conductive plates 53. The solder joints 60 are electrically connected to the corresponding fifth conductive plate 32 and sixth conductive plate 33, respectively. '

Between the third conductive plate 52 and the fourth conductive plate 53, in addition to directly expanding the area of the conductive plate to electrically connect each other, a plurality of circuit structures may be formed on the second substrate 50 (Fig. Not shown), the third conductive plate 52 and the fourth conductive plate 53 are electrically connected to each other. A complicated circuit structure can be formed by the above connection method. The advantage of using the second substrate 50 will allow the serial/parallel circuit between the different light emitting diodes to be performed on the second substrate 50. Since the area and thickness of the second substrate 50 can be relatively elastic, it is sufficient to cope with a very complicated circuit structure. The application of the high voltage LED chip 302 will be more versatile when complex circuit structures are available.

 The second substrate 50 can be a silicon substrate, a printed circuit board/printed circuit multilayer board or a ceramic substrate. For example: alumina, aluminum nitride, yttria low temperature co-fired multilayer ceramics or high temperature co-fired multi-layer ceramics...etc.

 In the design of the flip chip structure, in order to provide a light-emitting diode with better light-emitting efficiency, the third conductive substrate 52 and the fourth conductive plate 53 may be further on the third surface 51 of the second substrate 50. A reflective layer is formed. Alternatively, a reflective layer may be formed on the exposed surface of the second insulating layer 31, that is, the second insulating layer 31.

 Each of the above reflective layers may be selected from one of aluminum, silver, gold, and the like. When making the reflective layer, it must be noted that if the reflective layer is a conductive material, the reflective layer cannot be in contact with the third conductive plate 52 or the fourth conductive plate 53 and cannot be in contact with the fifth conductive plate 32 or the sixth conductive plate 33, and Preferably, the reflective layer can maintain a certain gap with each of the conductive plates to avoid short circuit between the conductive plates.

 In order to make the light-emitting diodes of the high-voltage LED chip 302 more easily connected to each other. Or in order to make the high-voltage LED chip 302 and the second substrate 50 more flat and complete, the surface height of the sixth conductive plate 33 of all the fifth conductive plates 32 is the same level of height, which will be advantageous for the process. Casting.

 As shown in FIG. 10, the high voltage LED chip 302 further includes a second conductor layer 37 formed with at least one conductor and covering the second insulating layer 31, and two ends of each conductor are electrically connected to different units. The fifth conductive plate 32 or the sixth conductive plate 33. This makes it easy to connect different LEDs in series/parallel. By the support of the second insulating layer 31, the second conductor layer 37 can also be subjected to complicated circuit layout design.

 As shown in FIG. 11A to FIG. 11G, since the high voltage LED chip 302 of the present embodiment has the complete first insulating layer 25 and the second insulating layer 31, the same can be made on each insulating layer as shown in FIGS. 11A to 11G. Similar complex circuits, especially when using the second substrate 50 to form a flip chip structure, are easier to achieve with related circuits.

 In addition, when the high voltage LED chip 302 can be reversely connected in parallel with at least two light emitting tubes and tubes to form an alternating current type high voltage LED chip 302, the alternating current type high voltage LED chip 302 is connected through a plurality of circuits provided by the circuit substrate 200. To form a high voltage AC LED structure having a high voltage LED chip 302 of series, parallel or series-parallel AC type.

In addition, when the high voltage LED chips 301, 302 are DC type high voltage LED chips 301, 302, at least two DC types can also be connected through the various circuit connections provided by the circuit substrate 200. The high voltage LED chips 301, 302 are connected in anti-parallel to form a high voltage AC light emitting diode structure. Generally speaking, the high voltage LED chips 301 and 302 can be connected to the high voltage AC light emitting diode structure through the circuit substrate 200. The manner in which the high voltage LED chips 301 and 302 are connected will not be described herein.

 The above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention. The skilled person can make some modifications or modifications to the equivalent embodiments by using the above-disclosed technical contents without departing from the technical scope of the present invention, but without departing from the technical solution of the present invention, according to the present invention. Technical simplifications Any simple modifications, equivalent changes and modifications made to the above embodiments are still within the scope of the technical solutions of the present invention.

Claims

Rights request A high voltage alternating current light emitting diode structure, characterized in that it comprises:  a circuit substrate;  a plurality of high voltage LED chips are fixedly and electrically connected to the circuit substrate, and the high voltage LED chips are formed into a series circuit by the circuit substrate, and each of the high voltage LED chips comprises: a first substrate, having a a first surface and a second surface;  An adhesive layer formed on the first surface;  At least two first ohmic connecting layers are formed on the adhesive layer;  At least two epitaxial layers, a first trench is formed between the two epitaxial layers, and each of the epitaxial layers has: a lower cladding layer formed on the first ohmic connecting layer; and an active layer formed on The lower cladding layer; and an upper coating layer formed on the active layer;  a first insulating layer covering each of the first ohmic connecting layer and a surface of each of the upper cladding layers, and formed between any two of the first ohmic connecting layers, the first insulating layer is a first opening and a second opening are respectively formed at the exposed portion of the upper cladding layer and each of the first ohmic connecting layers;  The at least two first conductive plates are respectively formed in each of the first openings, and are electrically connected to the upper cladding layer;  The at least two second conductive plates are respectively formed in each of the second openings, and are electrically connected to the first ohmic connection layer;  a second substrate having a third surface, the third surface is formed with at least two third conductive plates and at least two fourth conductive plates, and the second substrate is formed with a plurality of circuit structures for electrical Connecting the third conductive plate and the fourth conductive plate, and each of the third conductive plates and each of the fourth conductive plates are electrically connected to the corresponding first conductive plate and the second by solder joints And a conductive substrate, wherein the first substrate is a transparent substrate and the adhesive layer is a transparent adhesive layer, and a reflective layer is formed on the third surface at portions other than the third conductive plate and the fourth conductive plate.  2. The high voltage AC light emitting diode structure according to claim 1, wherein the circuit substrate is an aluminum substrate or a ceramic substrate.  3. The high voltage AC light emitting diode structure according to claim 2, wherein the ceramic substrate is provided with a plurality of heat conducting columns or a plurality of conductive columns.  4. The high voltage AC light emitting diode structure of claim 1 wherein any two of the high voltage LED chips are further connected in parallel such that the series circuit further has a parallel circuit.  5. The high voltage AC light emitting diode structure of claim 1 wherein the series circuit further parallels at least one of the series circuits. 6. The high voltage alternating current light emitting diode structure of claim 1 wherein The first step includes a first conductive layer formed with at least one conductor and covering the first insulating layer, and each of the two ends of the conductor is electrically connected to the second conductive plate or the first conductive of the different unit board.  7. A high voltage alternating current light emitting diode structure, characterized in that it comprises:  a circuit substrate;  a plurality of high voltage LED chips are fixedly and electrically connected to the circuit substrate, and the high voltage LED chips are formed into a series circuit by the circuit substrate, and each of the high voltage LED chips comprises: a first substrate, having a a first surface and a second surface;  An adhesive layer formed on the first surface;  At least two first ohmic connecting layers are formed on the adhesive layer;  At least two epitaxial layers, each of the epitaxial layers having: a lower cladding layer formed on the first ohmic connecting layer; an active layer formed on the lower cladding layer; and an overlying cladding layer formed On the active layer; and a second trench extending vertically through the upper cladding layer and the active layer, and partially penetrating the lower cladding layer;  a second insulating layer overlying each of the upper cladding layers and formed between the two epitaxial layers and any two of the first ohmic connection layers, the second insulating layer being on the upper cladding layer and a third opening and a fourth opening are formed on the inner side of the second groove;  At least two fifth conductive plates are respectively formed in each of the third openings, and are electrically connected to an upper cladding layer;  The at least two sixth conductive plates are respectively formed in each of the fourth openings, and have an extending portion extending downwardly, the extending portion vertically penetrating the epitaxial layer and electrically connected to the first ohmic connecting layer .  8. The high voltage AC light emitting diode structure according to claim 7, wherein the circuit substrate is an aluminum substrate or a ceramic substrate.  9. The high voltage alternating current light emitting diode structure according to claim 8, wherein the ceramic substrate is provided with a plurality of heat conducting columns or a plurality of conductive columns.  10. The high voltage AC light emitting diode structure of claim 7, wherein any two of the high voltage LED chips are further connected in parallel to each other such that the series circuit further has a parallel circuit.  11. The high voltage AC light emitting diode structure of claim 7 wherein the series circuit is further coupled in parallel with at least one of the series circuits.  12. The high voltage AC light emitting diode structure of claim 7, wherein the second insulating layer is formed in the second trench. 13. The high voltage AC light emitting diode structure of claim 7, wherein the first substrate is a transparent substrate and the adhesive layer is a transparent adhesive layer, and a reflective layer is formed on the second surface. . 14. The high voltage AC light emitting diode structure according to claim 7, wherein the adhesive layer is a transparent adhesive layer, and a reflective layer is formed between the first substrate and the adhesive layer.  The high voltage alternating current light emitting diode structure of claim 7 further comprising a second substrate having a third surface, the third surface being formed with at least two third conductive plates and at least two a fourth conductive plate, the second substrate is formed with a plurality of circuit structures for electrically connecting the third conductive plate and the fourth conductive plate, and each of the third conductive plates and each of the fourth conductive plates And electrically connecting to the corresponding fifth conductive plate and the sixth conductive plate respectively by solder joints, wherein the first substrate is a transparent substrate and the adhesive layer is a transparent adhesive layer.  The high voltage AC light emitting diode structure according to claim 15, wherein a reflective layer is formed on a portion of the second substrate other than the third conductive plate and the fourth conductive plate.  17. The high voltage AC light emitting diode structure according to claim 15, wherein a reflective layer is formed on the second insulating layer.  18. The high voltage AC light emitting diode structure according to claim 7, wherein a surface height of said fifth conductive plate and said sixth conductive plate is the same level.  19. The high voltage AC light emitting diode structure of claim 7 further comprising a second conductor layer formed with at least one conductor overlying the second insulating layer, and each of the conductors The two ends are electrically connected to the fifth conductive plate or the sixth conductive plate of different units, respectively.