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WO2013062158A1 - Scanning electron microscope having an electronic beam aligning function, and method for controlling a wien filter for a scanning electron microscope - Google Patents

Scanning electron microscope having an electronic beam aligning function, and method for controlling a wien filter for a scanning electron microscope Download PDF

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Publication number
WO2013062158A1
WO2013062158A1 PCT/KR2011/008082 KR2011008082W WO2013062158A1 WO 2013062158 A1 WO2013062158 A1 WO 2013062158A1 KR 2011008082 W KR2011008082 W KR 2011008082W WO 2013062158 A1 WO2013062158 A1 WO 2013062158A1
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WO
WIPO (PCT)
Prior art keywords
empty filter
electron beam
electric field
sample
alignment
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Ceased
Application number
PCT/KR2011/008082
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French (fr)
Korean (ko)
Inventor
김석
금우락
안재형
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SNU Precision Co Ltd
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SNU Precision Co Ltd
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Priority to PCT/KR2011/008082 priority Critical patent/WO2013062158A1/en
Publication of WO2013062158A1 publication Critical patent/WO2013062158A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02Details
    • H01J37/244Detectors; Associated components or circuits therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15Means for deflecting or directing discharge
    • H01J2237/1501Beam alignment means or procedures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244Detection characterized by the detecting means
    • H01J2237/2449Detector devices with moving charges in electric or magnetic fields

Definitions

  • the present invention relates to an empty filter control method for a scanning electron microscope and a scanning electron microscope having an electron beam alignment function. More particularly, the scanning electron microscope can be aligned to achieve a desired target point by using an empty filter.
  • the present invention relates to a scanning electron microscope having an empty filter control method and an electron beam alignment function.
  • the surface of a sample placed in a vacuum is scanned in a two-dimensional direction with a fine electron beam of about 1 to 100 nm to detect a signal of secondary electrons generated on the surface of the sample, and to display or record an enlarged image on a cathode ray and a screen, Scanning electron microscopes for analyzing morphological microstructures and the like are widely used.
  • a separate positioning device is required to align the moving trajectory of the electron beam so that the emitted electron beam may reach a desired target point.
  • an object of the present invention is to solve such a conventional problem, the empty filter control method for a scanning electron microscope that can be controlled to reach the desired target point on the sample by using the empty filter without any additional device and A scanning electron microscope having an electron beam alignment function is provided.
  • the above object is, according to the present invention, a method used in a scanning electron microscope for detecting an electron beam generated from a light source through an empty filter and incident on a sample, and then emitting electrons emitted through the empty filter and incident on a detector. And the final electric field and the final electric field to be applied to the empty filter so that the electron beam passing through the empty filter reaches the target point of the sample and at the same time the emitted electrons passing through the empty filter reach the detector. Calculating a magnetic field; And applying the final electric field and the final magnetic field to the empty filter.
  • the empty filter control method for a scanning electron microscope comprising: a.
  • an initial electric field is applied to the empty filter so that the electron beam passing through the empty filter moves vertically downwards, and at the same time, the emission electrons emitted from the sample and passing through the empty filter reach the detector.
  • the method may further include a correction information obtaining step of obtaining a correction electric field required for the empty filter to correct the cross-sectional shape of the electron beam before the applying step, wherein the applying step is applied to the empty filter in the correcting electric field obtaining step.
  • the final electric field may include the corrected electric field information.
  • the alignment information acquiring step may include: a target point acquiring step of acquiring a position of the target point on the sample; A distance measuring step of measuring the target point linear distance from the bin filter; And a final horizontal force calculation step of calculating a final horizontal force to be provided to the electron beam from the empty filter in order for the electron beam to reach a position of the target point.
  • the alignment information acquiring step is required after the final horizontal force calculation step, so that the final horizontal force is applied to the electron beam and the emission electrons passing through the empty filter reach the detector.
  • the method may further include calculating alignment information for calculating the alignment electric field and the alignment magnetic field.
  • the electrostatic force applied to the electron beam by the alignment electric field may have the same magnitude in the same direction as the magnetic force applied to the electron beam by the alignment magnetic field.
  • the object is, according to the present invention, a scanning electron microscope for injecting an electron beam generated from a light source into a sample to measure the emitted electrons emitted from the sample, wherein the scanning electron microscope is disposed between the sample and the sample to detect the emitted electrons.
  • Detector A bin filter disposed below the detector and configured to control a movement trajectory of the electron beam and the emission electrons by generating a magnetic field and an electric field;
  • Control unit for controlling the electric and magnetic fields applied to the empty filter is achieved by a scanning electron microscope having an electron beam alignment function.
  • the control unit may further include a first calculation unit configured to calculate an initial electric field and an initial magnetic field applied to the empty filter so that the electron beam passing through the empty filter moves vertically downward; And a second calculation unit configured to calculate an alignment electric field and an alignment magnetic field applied to the empty filter so that the electron beam reaches a desired target point on the sample.
  • the control unit may further include a third calculator configured to calculate a correction electric field applied to the empty filter in order to control the shape of the cross section of the electron beam passing through the empty filter.
  • an empty filter control method for a scanning electron microscope that can easily control a movement trajectory of an electron beam by using an empty filter.
  • the shape deformation of the electron beam can be easily corrected by using the empty filter.
  • a scanning electron microscope having an electron beam alignment function that can easily control the movement trajectory and shape of an electron beam by using an empty filter.
  • FIG. 1 schematically illustrates a scanning electron microscope with an electron beam alignment function according to an embodiment of the present invention
  • FIG. 2 schematically illustrates the empty filter of the scanning electron microscope with the electron beam alignment function of FIG. 1,
  • FIG. 3 is a flowchart of a method of controlling a blank filter for a scanning electron microscope according to a first embodiment of the present invention
  • FIG. 4 is for explaining the initial information acquisition step of the empty filter control method for the scanning electron microscope of FIG.
  • FIG. 5 is for explaining a target point acquisition step of the empty filter control method for the scanning electron microscope of FIG.
  • FIG. 6 illustrates an operation of calculating alignment information of the empty filter control method for the scanning electron microscope of FIG. 3.
  • FIG. 7 illustrates an application step of the empty filter control method for the scanning electron microscope of FIG. 3.
  • FIG. 8 is a flowchart of a method of controlling a blank filter for a scanning electron microscope according to a second embodiment of the present invention.
  • FIG. 9 illustrates an operation of obtaining correction information of the empty filter control method for the scanning electron microscope of FIG. 8.
  • Figure 1 schematically shows a scanning electron microscope with an electron beam alignment function according to an embodiment of the present invention.
  • the scanning electron microscope 100 having the electron beam alignment function includes a barrel 110, a light source 120, a focusing lens 130, an aperture 140, a detector 150, and an empty filter. 160, an objective lens 170, a sample holder 180, and a controller 190.
  • the barrel 110 is an exterior material for accommodating the light source 120, the focusing lens 130, the aperture 140, the detector 150, the bin filter 160, and the objective lens 170, which will be described later.
  • the end of the side from which the electron beam exits that is, the end of the sample side on which the sample is mounted, is configured to maintain the vacuum state.
  • the light source 120 is a member for scanning the electron beam generated by heating the cathode in the barrel 110 toward the sample holder 180 on which the lower sample S is mounted.
  • the focusing lens 130 is a member for focusing the electron beam emitted from the light source 120 described above.
  • the aperture 140 is a member for converting the focused electron beam into a constant wavelength by passing through the focusing lens 130.
  • the detector 150 is a member for detecting electrons emitted from the sample S after the electron beam is incident, that is, emission electrons including secondary electrons. Disposed between filters 160.
  • the front end surface of the detector 150 may receive the emitted electrons vertically. It is desirable to form a slope so that it can.
  • FIG. 2 schematically illustrates the empty filter of the scanning electron microscope with the electron beam alignment function of FIG. 1.
  • the empty filter 160 is provided between the detector 150 and the sample holder 180, that is, the lower side of the detector 150, and the empty filter 160 passes downward. It is a member for controlling the movement trajectory of the electron beam to reach this desired target point or controlling the movement trajectory of the emission electrons so that the emission electrons passing upward are deflected toward the detector 150.
  • the empty filter 160 is composed of an electric field generating unit for generating an electric field by applying an applied voltage to apply an electrostatic force to the electron beam or emitting electrons, and a magnetic field generating unit for generating a magnetic field to apply a magnetic force to the moving electron beam or emitting electrons
  • an electric field generating unit for generating an electric field by applying an applied voltage to apply an electrostatic force to the electron beam or emitting electrons
  • a magnetic field generating unit for generating a magnetic field to apply a magnetic force to the moving electron beam or emitting electrons
  • a plurality of pole electrodes 161 are mounted around the ring-shaped support member 162 surrounding the movement trajectory of the electron beam or the emission electrons.
  • the number of pole electrodes 161 is described as eight, but the number of pole electrodes 161 is not limited thereto.
  • the control unit 190 is to control the electric and magnetic fields generated from the empty filter 160, the application unit 191, the first output unit 192, the second output unit 193 and the third output unit ( 194).
  • the applying unit 191 is connected to the first calculating unit 192, the second calculating unit 193, and the third calculating unit 194, which will be described later, is obtained from the calculation units 192, 193, and 194.
  • the final electric field and the final magnetic field information is applied to the empty filter 160.
  • the first calculation unit 192 allows the electron beam generated from the upper light source 120 to move vertically downward without being deflected, so that the emission electrons emitted from the lower sample S are incident on the detector 150. It is a member for calculating the initial electric field and the initial magnetic field information required from the empty filter 160 to deflect the movement traces of the emission electrons.
  • the second calculation unit 193 does not affect the movement trajectory of the emission electrons emitted from the sample S, and the empty filter 160 to concentrate the electron beam emitted from the light source 120 at a desired target point of the sample. Is a member for calculating the alignment electric field and alignment magnetic field information required from the.
  • the second calculating unit 193 aligns the electron beam to a desired target point. In order to calculate the alignment electric field and the alignment magnetic field information required from the empty filter 160.
  • the third calculation unit 194 is a member that calculates correction electric field information required from the empty filter 160 to control the shape of the cross section of the electron beam emitted from the light source 120.
  • the cross section of the electron beam may be non-circular in the moving direction and the cross section in the vertical direction.
  • the reliability of the measurement result of the sample S may be ensured. Since it is not possible to apply an additional correction electric field from the empty filter 160 to correct the shape of the electron beam.
  • the third calculation unit 194 calculates the information of the electric field required from the empty filter 160 to correct the shape of the electron beam and provides it to the application unit 191 described above.
  • the electron beam scanned from the light source 120 reaches the empty filter 160 after passing through the focusing lens 130 and the aperture 140.
  • the empty filter 160 generates the final electric field and the final magnetic field by the controller 190.
  • the electron beam applied with electrostatic force and magnetic force by the electric and magnetic fields generated from the empty filter 160 passes through the objective lens 170 to reach the target point on the sample S. After the electron beam is incident, 2 Emitting electrons, including the charge electrons, are emitted.
  • the emission electrons move upward and pass through the empty filter 160.
  • the emission electrons affected by the electrostatic and magnetic forces by the final electric field and the final magnetic field applied from the empty filter 160 move to the detector 150. It is deflected and detected by the last incident on the detector 150.
  • FIG. 3 is a flowchart of a method of controlling an empty filter for a scanning electron microscope according to a first embodiment of the present invention.
  • the scanning filter microscopy empty filter control method (S100) is for aligning an electron beam using the empty filter 160. (S120).
  • the calculating step S110 is a step of calculating and obtaining final electric field and final magnetic field information applied to the empty filter 160, and includes an initial information obtaining step S111 and an alignment information obtaining step S112.
  • FIG. 4 illustrates an initial information acquisition step of the empty filter control method for the scanning electron microscope of FIG. 3.
  • the electron beam passing downward through the empty filter 160 is moved vertically downward without deflection of the trajectory, and simultaneously passes upward through the empty filter 160.
  • the movement trajectory of the emitted electrons is deflected to calculate and obtain the initial electric field and the initial magnetic field information required from the empty filter in order for the emitted electrons to move toward the detector 150 through the first calculation unit 192.
  • the region of the sample S to be measured is in a state vertically below the empty filter 160, and this state is defined as an initial state.
  • this initial state the trajectory change of the electron beam due to the empty filter 160 is not required, and only the movement trajectory of the emission electrons is deflected toward the detector 150.
  • the electrostatic force F M, I1 applied to the electron beam and the electrostatic force F M, I2 applied to the emission electrons are the same, but the magnetic force F E, I1 applied to the electron beam is the same.
  • the magnetic force F E, I2 applied to the emission electrons sets the initial electric field and the initial magnetic field information to have the same intensity in the opposite direction.
  • the calculating and acquiring step includes a target point obtaining step S113, a distance measuring step S114, a final horizontal force calculating step S115, and an alignment information calculating step S116.
  • FIG. 5 is for explaining a target point acquisition step of the empty filter control method for the scanning electron microscope of FIG.
  • the target point obtaining step S113 is a step of receiving a target point T on the sample S from the outside or by specifying an arbitrary target point T internally.
  • the distance measuring step S114 is a step of detecting or measuring the linear distance d from the position of the empty filter 160 to which the electrostatic force and the magnetic force are applied to the electron beam from the target point T of the sample S.
  • the final horizontal force calculating step (S115) is a target point in consideration of the linear distance (d) from the empty filter 160 measured in the above-described distance measuring step (S114) to the target point (T) and the moving speed of the electron beam. It is a step of calculating the horizontal force, that is, the final horizontal force, which should be applied to the electron beam in order to reach (T).
  • FIG. 6 illustrates an operation of calculating alignment information of the empty filter control method for the scanning electron microscope of FIG. 3.
  • the final horizontal force calculated in the final horizontal force calculating step S115 is provided to the electron beam, but the empty filter 160 does not affect the emitted electrons. Calculating the required alignment electric field and the alignment magnetic field.
  • the combination of the electrostatic force (F M, A1 ) and the magnetic force (F E, A1 ) applied to the electron beam passing downward through the empty filter 160 is the first horizontal force, but the empty filter ( Electrostatic forces (F M, A2 ) and magnetic forces (F E, A2 ) applied to the emission electrons passing upward through 160 are canceled to calculate the alignment electric field and the alignment magnetic field so as not to affect the emission electrons.
  • FIG. 7 illustrates an application step of the empty filter control method for the scanning electron microscope of FIG. 3.
  • the applying step S120 calculates the final electric field and the final magnetic field by combining the initial electric field, the initial magnetic field and the alignment electric field, and the alignment magnetic field obtained in the calculating step S110.
  • the electron beam passing through the empty filter 160 to reach the desired target point (T) on the sample (S) while being emitted from the sample (S)
  • the emission electrons are controlled to be incident on the detector 150.
  • the applying unit 191 calculates the initial electric field and initial magnetic field information calculated and obtained by the first calculating unit 192 and the correction electric field and correction magnetic field information obtained by the second calculating unit 193. By integrating, the final and final magnetic fields are calculated and the final and final magnetic fields are generated from the empty filter.
  • FIG. 8 is a flowchart of a method of controlling a blank filter for a scanning electron microscope according to a second embodiment of the present invention.
  • the scanning filter microscopic empty filter control method (S200) is for aligning an electron beam using the empty filter 160. (S120).
  • the calculating step (S110) is a step of calculating and obtaining final electric field and final magnetic field information applied to the empty filter 160.
  • the initial information obtaining step (S111), the alignment information obtaining step (S112), and the correction information obtaining step ( S217), and the initial information acquiring step S111 and the alignment information acquiring step S112 are the same as described above in the first embodiment, and thus redundant description is omitted.
  • FIG. 9 illustrates an operation of obtaining correction information of the empty filter control method for the scanning electron microscope of FIG. 8.
  • the correction information acquiring step S217 may remove the correction electric field required from the empty filter 160 to correct the abnormal shape of the electron beam passing through the empty filter 160 to the normal shape. It is the step of calculating and acquiring through the three calculating unit 194.
  • the third calculation unit 194 calculates the correction electric field information required from the empty filter 160 to correct this.
  • the third calculation unit 194 calculates a correction electric field required from the empty filter 160 in order for the electrostatic force F C applied to the electron beam to correct the shape of the electron beam.
  • the calculated corrected electric field information is transmitted to the applying unit 191, and in the applying step (S191), the final electric field in consideration of the corrected electric field information is generated from the empty filter 160.
  • the empty filter control method for a scanning electron microscope which can control an electron beam to reach a desired target point on a sample using an empty filter without a separate additional apparatus is provided.

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  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

The present invention relates to a method for controlling a Wien filter for a scanning electron microscope. The method for controlling the Wien filter for the scanning electron microscope is used for a scanning electron microscope which detects electrons by passing them through the Wien filter and making same enter a detector, wherein the electrons are emitted after electronic beams generated from a light source enter a sample through the Wien filter. The method is characterized by including: the production of a final electric field and a final magnetic field which are applied to the Wien filter to allow the electronic beams passing through the Wien filter to reach a target point on the sample and, at the same time, to allow the electrons emitted from the sample and passing through the Wien filter to reach the detector; and the application of the final electric field and final magnetic field to the Wien filter.

Description

주사전자현미경용 빈필터 제어방법 및 전자빔 정렬 기능을 구비한 주사전자현미경Scanning electron microscope with empty filter control method and scanning electron microscope

본 발명은 주사전자현미경용 빈필터 제어방법 및 전자빔 정렬 기능을 구비한 주사전자현미경에 관한 것으로서, 보다 상세하게는 빈필터를 이용하여 전자빔이 원하는 목표점에 도달할 수 있도록 정렬할 수 있는 주사전자현미경용 빈필터 제어방법 및 전자빔 정렬 기능을 구비한 주사전자현미경에 관한 것이다.The present invention relates to an empty filter control method for a scanning electron microscope and a scanning electron microscope having an electron beam alignment function. More particularly, the scanning electron microscope can be aligned to achieve a desired target point by using an empty filter. The present invention relates to a scanning electron microscope having an empty filter control method and an electron beam alignment function.

최근 정보기기들의 극소화 추세 뿐만 아니라 첨단 소재 분야에서도 극미세 기술의 산업화로 인하여 미세 구조물 또는 재료 표면 형상에 대한 정보가 절실히 요구되고 있다. 특히, 1990년대 후반부터 전세계적으로 나노 연구가 활발해지면서 나노물질의 구조와 특성을 규명하기 위한 다양한 연구들이 진행되고 있으며, 전자현미경은 중요한 축을 담당하고 있다.Recently, information on microstructures or material surface shapes is urgently needed due to the industrialization of micro technology in the field of advanced materials as well as minimization of information devices. In particular, as nanotechnology has been actively researched around the world since the late 1990s, various studies have been conducted to investigate the structure and properties of nanomaterials, and electron microscopy plays an important role.

최근들어 진공 중에 놓여진 시료의 표면을 1 내지 100nm 정도의 미세한 전자빔으로 이차원 방향으로 주사하여 시료 표면에서 발생하는 2차전자의 신호를 검출하여 음극선과 화면상에 확대화상을 표시하거나, 기록하여 시료의 형태 미세구조 등을 분석하는 주사전자 현미경이 널리 이용되고 있다.Recently, the surface of a sample placed in a vacuum is scanned in a two-dimensional direction with a fine electron beam of about 1 to 100 nm to detect a signal of secondary electrons generated on the surface of the sample, and to display or record an enlarged image on a cathode ray and a screen, Scanning electron microscopes for analyzing morphological microstructures and the like are widely used.

다만, 종래에는 방출되는 전자빔이 원하는 목표점으로 도달될 수 있도록 전자빔의 이동궤적을 정렬하기 위해서는 별도의 포지셔닝 장치가 필요한 문제가 있었다.However, in the related art, a separate positioning device is required to align the moving trajectory of the electron beam so that the emitted electron beam may reach a desired target point.

또한, 전자빔 이동시에 단면 형상의 변형으로 인하여 시료측정시의 신뢰도가 저하되는 문제가 있었다.In addition, there is a problem that the reliability at the time of sample measurement is lowered due to the deformation of the cross-sectional shape during the electron beam movement.

따라서, 본 발명의 목적은 이와 같은 종래의 문제점을 해결하기 위한 것으로서, 별도의 추가적인 장치 없이 빈필터를 이용하여 시료 상의 원하는 목표점에 전자빔이 도달하도록 제어할 수 있는 주사전자현미경용 빈필터 제어방법 및 전자빔 정렬 기능을 구비한 주사전자현미경을 제공함에 있다.Accordingly, an object of the present invention is to solve such a conventional problem, the empty filter control method for a scanning electron microscope that can be controlled to reach the desired target point on the sample by using the empty filter without any additional device and A scanning electron microscope having an electron beam alignment function is provided.

상기 목적은, 본 발명에 따라, 광소스로부터 생성되는 전자빔이 빈필터를 통과하여 시료에 입사된 후 방출되는 방출전자를 빈필터에 통과시켜 디텍터에 입사시킴으로써 검출하는 주사전자 현미경에 이용되는 방법으로서, 상기 빈필터를 통과한 전자빔이 상기 시료의 목표점에 도달되도록 하는 동시에 상기 시료로부터 방출되어 상기 빈필터를 통과하는 방출전자가 상기 디텍터에 도달되도록 하기 위하여 상기 빈필터에 인가되어야 하는 최종전기장 및 최종자기장을 산출하는 산출단계; 상기 최종전기장 및 상기 최종자기장을 상기 빈필터에 인가하는 인가단계;를 포함하는 것을 특징으로 하는 주사전자현미경용 빈필터 제어방법에 의해 달성된다.The above object is, according to the present invention, a method used in a scanning electron microscope for detecting an electron beam generated from a light source through an empty filter and incident on a sample, and then emitting electrons emitted through the empty filter and incident on a detector. And the final electric field and the final electric field to be applied to the empty filter so that the electron beam passing through the empty filter reaches the target point of the sample and at the same time the emitted electrons passing through the empty filter reach the detector. Calculating a magnetic field; And applying the final electric field and the final magnetic field to the empty filter. The empty filter control method for a scanning electron microscope, comprising: a.

또한, 상기 산출단계는 상기 빈필터를 통과한 전자빔이 수직하방으로 이동되도록 하는 동시에 상기 시료로부터 방출되어 상기 빈필터를 통과하는 방출전자가 상기 디텍터에 도달되도록 하기 위하여 상기 빈필터에 인가되는 초기전기장 및 초기자기장을 획득하는 초기정보 획득단계; 및 상기 전자빔이 상기 시료의 목표점에 도달되도록 하기 위하여 상기 빈필터에 인가되어야 하는 정렬전기장 및 정렬자기장을 획득하는 정렬정보 획득단계;를 포함할 수 있다.In the calculating step, an initial electric field is applied to the empty filter so that the electron beam passing through the empty filter moves vertically downwards, and at the same time, the emission electrons emitted from the sample and passing through the empty filter reach the detector. And an initial information acquiring step of acquiring an initial magnetic field. And obtaining alignment information for obtaining an alignment electric field and an alignment magnetic field to be applied to the empty filter so that the electron beam reaches the target point of the sample.

또한, 상기 인가단계 이전에 상기 전자빔의 단면형상을 보정하기 위해 상기 빈필터에 필요한 보정전기장을 획득하는 보정정보 획득단계를 더 포함하며, 상기 인가단계에서는 상기 보정전기장 획득단계에서 상기 빈필터에 인가되는 최종전기장은 상기 보정전기장정보를 포함할 수 있다.The method may further include a correction information obtaining step of obtaining a correction electric field required for the empty filter to correct the cross-sectional shape of the electron beam before the applying step, wherein the applying step is applied to the empty filter in the correcting electric field obtaining step. The final electric field may include the corrected electric field information.

또한, 상기 정렬정보 획득단계는 상기 시료상의 상기 목표점의 위치를 획득하는 목표점 획득단계; 상기 빈필터로에서부터 상기 목표점 직선거리를 측정하는 거리측정단계; 상기 전자빔이 상기 목표점의 위치에 도달하기 위하여 상기 빈필터로부터 상기 전자빔에 제공되어야 하는 최종 수평력을 산출하는 최종 수평력 산출단계;를 포함할 수 있다.The alignment information acquiring step may include: a target point acquiring step of acquiring a position of the target point on the sample; A distance measuring step of measuring the target point linear distance from the bin filter; And a final horizontal force calculation step of calculating a final horizontal force to be provided to the electron beam from the empty filter in order for the electron beam to reach a position of the target point.

또한, 상기 정렬정보 획득단계는 상기 최종 수평력 산출단계 이후에, 상기 전자빔에 상기 최종 수평력이 가해지도록 하는 동시에 상기 빈필터를 통과하는 상기 방출전자가 상기 디텍터에 도달하도록 하기 위하여 상기 빈필터로부터 요구되는 정렬전기장 및 정렬자기장을 산출하는 정렬정보 산출단계를 더 포함할 수 있다.In addition, the alignment information acquiring step is required after the final horizontal force calculation step, so that the final horizontal force is applied to the electron beam and the emission electrons passing through the empty filter reach the detector. The method may further include calculating alignment information for calculating the alignment electric field and the alignment magnetic field.

또한, 상기 정렬전기장에 의하여 상기 전자빔에 가해지는 정전기력은 상기 정렬자기장에 의하여 상기 전자빔에 가해지는 자기력과 동일한 방향의 동일한 크기를 가질 수 있다.In addition, the electrostatic force applied to the electron beam by the alignment electric field may have the same magnitude in the same direction as the magnetic force applied to the electron beam by the alignment magnetic field.

상기 목적은, 본 발명에 따라, 광소스로부터 생성되는 전자빔을 시료에 입사시켜 상기 시료로부터 방출되는 방출전자를 측정하는 주사전자현미경에 있어서, 상기 시료와 상기 시료 사이에 배치되며 상기 방출전자를 검출하는 디텍터; 상기 디텍터의 하방에 배치되며, 자기장 및 전기장을 발생시킴으로써 상기 전자빔 및 상기 방출전자의 이동궤적을 제어하는 빈필터; 상기 빈필터에 인가되는 전기장 및 자기장을 제어하는 제어부;를 포함하는 것을 특징으로 하는 전자빔 정렬 기능을 구비한 주사전자현미경에 의해 달성된다.The object is, according to the present invention, a scanning electron microscope for injecting an electron beam generated from a light source into a sample to measure the emitted electrons emitted from the sample, wherein the scanning electron microscope is disposed between the sample and the sample to detect the emitted electrons. Detector; A bin filter disposed below the detector and configured to control a movement trajectory of the electron beam and the emission electrons by generating a magnetic field and an electric field; Control unit for controlling the electric and magnetic fields applied to the empty filter is achieved by a scanning electron microscope having an electron beam alignment function.

또한, 상기 제어부는 상기 빈필터를 통과한 전자빔이 수직하방으로 이동하도록 상기 빈필터에 가해지는 최초전기장 및 최초자기장을 산출하는 제1산출부; 상기 시료 상에서 상기 전자빔이 원하는 목표점에 도달되도록 상기 빈필터에 가해지는 정렬전기장 및 정렬자기장을 산출하는 제2산출부;를 포함할 수 있다.The control unit may further include a first calculation unit configured to calculate an initial electric field and an initial magnetic field applied to the empty filter so that the electron beam passing through the empty filter moves vertically downward; And a second calculation unit configured to calculate an alignment electric field and an alignment magnetic field applied to the empty filter so that the electron beam reaches a desired target point on the sample.

또한, 상기 제어부는 상기 빈필터를 통과하는 전자빔 단면의 형상을 제어하기 위하여 상기 빈필터에 가해지는 보정전기장을 산출하는 제3산출부를 더 포함할 수 있다.The control unit may further include a third calculator configured to calculate a correction electric field applied to the empty filter in order to control the shape of the cross section of the electron beam passing through the empty filter.

본 발명에 따르면, 빈필터를 이용하여 전자빔의 이동궤적을 용이하게 제어할 수 있는 주사전자현미경용 빈필터 제어방법이 제공된다.According to the present invention, there is provided an empty filter control method for a scanning electron microscope that can easily control a movement trajectory of an electron beam by using an empty filter.

또한, 빈필터를 이용하여 전자빔의 형상변형을 용이하게 보정할 수 있다.In addition, the shape deformation of the electron beam can be easily corrected by using the empty filter.

또한, 본 발명에 따르면, 빈필터를 이용하여 전자빔의 이동궤적 및 형상을 용이하게 제어할 수 있는 전자빔 정렬 기능을 구비한 주사전자현미경이 제공된다.In addition, according to the present invention, there is provided a scanning electron microscope having an electron beam alignment function that can easily control the movement trajectory and shape of an electron beam by using an empty filter.

도 1은 본 발명의 일실시예에 따른 전자빔 정렬 기능을 구비한 주사전자현미경을 개략적으로 도시한 것이고,1 schematically illustrates a scanning electron microscope with an electron beam alignment function according to an embodiment of the present invention,

도 2는 도 1의 전자빔 정렬 기능을 구비한 주사전자현미경의 빈필터를 개략적으로 도시한 것이고,FIG. 2 schematically illustrates the empty filter of the scanning electron microscope with the electron beam alignment function of FIG. 1,

도 3은 본 발명의 제1실시예에 따른 주사전자현미경용 빈필터 제어방법의 흐름도이고,3 is a flowchart of a method of controlling a blank filter for a scanning electron microscope according to a first embodiment of the present invention;

도 4는 도 3의 주사전자현미경용 빈필터 제어방법의 초기정보 획득단계를 설명하기 위한 것이고,4 is for explaining the initial information acquisition step of the empty filter control method for the scanning electron microscope of FIG.

도 5는 도 3의 주사전자현미경용 빈필터 제어방법의 목표점 획득단계를 설명하기 위한 것이고,5 is for explaining a target point acquisition step of the empty filter control method for the scanning electron microscope of FIG.

도 6은 도 3의 주사전자현미경용 빈필터 제어방법의 정렬정보 산출단계를 설명하기 위한 것이고,FIG. 6 illustrates an operation of calculating alignment information of the empty filter control method for the scanning electron microscope of FIG. 3.

도 7은 도 3의 주사전자현미경용 빈필터 제어방법의 인가단계를 설명하기 위한 것이고, FIG. 7 illustrates an application step of the empty filter control method for the scanning electron microscope of FIG. 3.

도 8은 본 발명의 제2실시예에 따른 주사전자현미경용 빈필터 제어방법의 흐름도이고,8 is a flowchart of a method of controlling a blank filter for a scanning electron microscope according to a second embodiment of the present invention;

도 9는 도 8의 주사전자현미경용 빈필터 제어방법의 보정정보 획득단계를 설명하기 위한 것이다.FIG. 9 illustrates an operation of obtaining correction information of the empty filter control method for the scanning electron microscope of FIG. 8.

설명에 앞서, 여러 실시예에 있어서, 동일한 구성을 가지는 구성요소에 대해서는 동일한 부호를 사용하여 대표적으로 제1실시예에서 설명하고, 그 외의 실시예에서는 제1실시예와 다른 구성에 대해서 설명하기로 한다.Prior to the description, in the various embodiments, components having the same configuration will be representatively described in the first embodiment using the same reference numerals, and in other embodiments, different configurations from the first embodiment will be described. do.

이하, 첨부한 도면을 참조하여 본 발명의 제1실시예에 따른 주사전자현미경용 빈필터 제어방법에 대하여 상세하게 설명한다.Hereinafter, an empty filter control method for a scanning electron microscope according to a first embodiment of the present invention will be described in detail with reference to the accompanying drawings.

본 발명의 제1실시예에 따른 주사전자현미경용 빈필터 제어방법(S100)에 대하여 설명하기 전에, 본 실시예의 방법에 이용되는 전자빔 정렬 기능을 구비한 주사전자현미경(100) 및 이를 이용한 측정방법에 대해서 먼저 설명한다.Before describing the empty filter control method (S100) for the scanning electron microscope according to the first embodiment of the present invention, the scanning electron microscope (100) having an electron beam alignment function used in the method of the present embodiment and a measuring method using the same This is described first.

도 1은 본 발명의 일실시예에 따른 전자빔 정렬 기능을 구비한 주사전자현미경을 개략적으로 도시한 것이다.Figure 1 schematically shows a scanning electron microscope with an electron beam alignment function according to an embodiment of the present invention.

도 1을 참조하면, 상기 전자빔 정렬 기능을 구비한 주사전자현미경(100)은 경통(110)과 광소스(120)와 집속렌즈(130)와 어퍼쳐(140)와 디텍터(150)와 빈필터(160)와 대물렌즈(170)와 시료홀더(180)와 제어부(190)를 포함한다.Referring to FIG. 1, the scanning electron microscope 100 having the electron beam alignment function includes a barrel 110, a light source 120, a focusing lens 130, an aperture 140, a detector 150, and an empty filter. 160, an objective lens 170, a sample holder 180, and a controller 190.

상기 경통(110)는 후술하는 광소스(120), 집속렌즈(130), 어퍼쳐(140), 디텍터(150), 빈필터(160), 대물렌즈(170)를 내부에 수용하기 위한 외장재로서, 전자빔이 출사하는 측의 단부, 즉, 시료가 장착되는 시료 측의 단부는 진공상태가 유지되도록 구성된다.The barrel 110 is an exterior material for accommodating the light source 120, the focusing lens 130, the aperture 140, the detector 150, the bin filter 160, and the objective lens 170, which will be described later. The end of the side from which the electron beam exits, that is, the end of the sample side on which the sample is mounted, is configured to maintain the vacuum state.

상기 광소스(120)는 경통(110) 내의 음극을 가열하여 발생되는 전자빔을 하방의 시료(S)가 장착되어 있는 시료홀더(180) 측으로 주사하기 위한 부재이다.The light source 120 is a member for scanning the electron beam generated by heating the cathode in the barrel 110 toward the sample holder 180 on which the lower sample S is mounted.

상기 집속렌즈(130)는 상술한 광소스(120)로부터 방출되는 전자빔을 한점으로 집속하기 위한 부재이다.The focusing lens 130 is a member for focusing the electron beam emitted from the light source 120 described above.

상기 어퍼쳐(140)는 집속렌즈(130)를 통과함으로써 집속된 전자빔을 파장이 일정한 형태로 변환하기 위한 부재이다.The aperture 140 is a member for converting the focused electron beam into a constant wavelength by passing through the focusing lens 130.

상기 디텍터(150)는 전자빔이 입사된 후 시료(S)로부터 방출되는 전자, 즉, 2차전자(Secondary Electron)을 포함하는 방출전자를 검출하기 위한 부재로서, 광소스(120)와 후술하는 빈필터(160) 사이에 배치된다.The detector 150 is a member for detecting electrons emitted from the sample S after the electron beam is incident, that is, emission electrons including secondary electrons. Disposed between filters 160.

한편, 방출전자는 시료(S)로부터 상측으로 이동하는 도중에 빈필터(160)에 의하여 측방으로 편향되어 디텍터(150)에 입사되는 것이므로, 디텍터(150)의 전단면은 방출전자가 수직으로 입사될 수 있도록 경사를 형성하는 것이 바람직하다.On the other hand, since the emitted electrons are deflected laterally by the empty filter 160 and are incident on the detector 150 while moving upward from the sample S, the front end surface of the detector 150 may receive the emitted electrons vertically. It is desirable to form a slope so that it can.

도 2는 도 1의 전자빔 정렬 기능을 구비한 주사전자현미경의 빈필터를 개략적으로 도시한 것이다.FIG. 2 schematically illustrates the empty filter of the scanning electron microscope with the electron beam alignment function of FIG. 1.

도 2를 참조하면, 상기 빈필터(160)는 디텍터(150)와 시료홀더(180)의 사이, 즉, 디텍터(150)의 하측에 마련되는 것으로서, 빈필터(160)는 하방을 통과하는 전자빔이 원하는 목표점에 도달하도록 전자빔의 이동궤적을 제어하거나 상방을 통과하는 방출전자가 디텍터(150) 측으로 편향되도록 방출전자의 이동궤적을 제어하는 부재이다.Referring to FIG. 2, the empty filter 160 is provided between the detector 150 and the sample holder 180, that is, the lower side of the detector 150, and the empty filter 160 passes downward. It is a member for controlling the movement trajectory of the electron beam to reach this desired target point or controlling the movement trajectory of the emission electrons so that the emission electrons passing upward are deflected toward the detector 150.

한편, 빈필터(160)는 인가되는 전압에 의하여 전기장을 발생시켜 전자빔 또는 방출전자에 정전기력을 가하는 전기장 발생부, 자기장을 발생시켜 이동하는 전자빔 또는 방출전자에 자기력이 가해지도록 하는 자기장 발생부로 구성되는 폴 전극(161) 다수개가 전자빔 또는 방출전자의 이동궤적을 둘러싸는 링 형상의 지지부재(162)의 둘레에 장착되는 구조를 갖는다.On the other hand, the empty filter 160 is composed of an electric field generating unit for generating an electric field by applying an applied voltage to apply an electrostatic force to the electron beam or emitting electrons, and a magnetic field generating unit for generating a magnetic field to apply a magnetic force to the moving electron beam or emitting electrons A plurality of pole electrodes 161 are mounted around the ring-shaped support member 162 surrounding the movement trajectory of the electron beam or the emission electrons.

한편, 본 실시예에서 이러한 폴 전극(161)의 갯수는 8개로 기술하였으나, 폴 전극(161)의 갯수는 이에 제한되는 것은 아니다.Meanwhile, in the present embodiment, the number of pole electrodes 161 is described as eight, but the number of pole electrodes 161 is not limited thereto.

상기 제어부(190)는 빈필터(160)로부터 발생하는 전기장 및 자기장을 제어하기 위한 것으로서, 인가부(191)와 제1산출부(192)와 제2산출부(193)와 제3산출부(194)를 포함한다.The control unit 190 is to control the electric and magnetic fields generated from the empty filter 160, the application unit 191, the first output unit 192, the second output unit 193 and the third output unit ( 194).

상기 인가부(191)는 후술하는 제1산출부(192), 제2산출부(193), 제3산출부(194)와 연결되어 각 산출부(192, 193, 194)로부터 획득되어 산출되는 최종전기장 및 최종자기장 정보를 빈필터(160)에 인가하는 부재이다.The applying unit 191 is connected to the first calculating unit 192, the second calculating unit 193, and the third calculating unit 194, which will be described later, is obtained from the calculation units 192, 193, and 194. The final electric field and the final magnetic field information is applied to the empty filter 160.

상기 제1산출부(192)는 상측의 광소스(120)로부터 발생하는 전자빔은 편향되지 않고 수직하방으로 이동하도록 하되, 하측의 시료(S)로부터 방출되는 방출전자는 디텍터(150)에 입사되도록 방출전자의 이동궤적을 편향시키기 위하여 빈필터(160)로부터 요구되는 초기전기장 및 초기자기장 정보를 산출하는 부재이다.The first calculation unit 192 allows the electron beam generated from the upper light source 120 to move vertically downward without being deflected, so that the emission electrons emitted from the lower sample S are incident on the detector 150. It is a member for calculating the initial electric field and the initial magnetic field information required from the empty filter 160 to deflect the movement traces of the emission electrons.

상기 제2산출부(193)는 시료(S)로부터 방출되는 방출전자의 이동궤적에는 영향을 주지 않고, 광소스(120)로부터 방출되는 전자빔을 시료의 원하는 목표점에 집중시키기 위하여 빈필터(160)로부터 요구되는 정렬전기장 및 정렬자기장 정보를 산출하는 부재이다.The second calculation unit 193 does not affect the movement trajectory of the emission electrons emitted from the sample S, and the empty filter 160 to concentrate the electron beam emitted from the light source 120 at a desired target point of the sample. Is a member for calculating the alignment electric field and alignment magnetic field information required from the.

즉, 방출전자를 디텍터(150) 측으로 편향시키기 위하여 빈필터(160)로부터 필요한 전기장 및 자기장은 제1산출부(192)에 의하여 산출되므로, 제2산출부(193)에서는 전자빔을 원하는 목표점으로 정렬시키기 위해 빈필터(160)로부터 요구되는 정렬전기장 및 정렬자기장 정보를 산출하게 된다.That is, since the electric field and the magnetic field required from the empty filter 160 to deflect the emitted electrons toward the detector 150 are calculated by the first calculating unit 192, the second calculating unit 193 aligns the electron beam to a desired target point. In order to calculate the alignment electric field and the alignment magnetic field information required from the empty filter 160.

상기 제3산출부(194)는 광소스(120)로부터 방출되는 전자빔의 단면의 형상을 제어하기 위해 빈필터(160)로부터 요구되는 보정전기장 정보를 산출하는 부재이다.The third calculation unit 194 is a member that calculates correction electric field information required from the empty filter 160 to control the shape of the cross section of the electron beam emitted from the light source 120.

즉, 빈필터(160) 통과시에 전자빔은 이동방향과 수직 방향 단면의 형상이 원형이 아닌 경우가 발생하며, 전자빔 단면 형상에 변혀 발생하는 경우에는 시료(S)의 측정 결과의 신뢰도를 확보할 수 없으므로 빈필터(160)로부터 추가적인 보정전기장을 인가하여 전자빔의 형상을 보정하게 된다. In other words, when the electron beam passes through the empty filter 160, the cross section of the electron beam may be non-circular in the moving direction and the cross section in the vertical direction. When the electron beam crosses the cross section, the reliability of the measurement result of the sample S may be ensured. Since it is not possible to apply an additional correction electric field from the empty filter 160 to correct the shape of the electron beam.

따라서, 제3산출부(194)에서는 전자빔의 형상의 보정을 위하여 빈필터(160)로부터 요구되는 전기장의 정보를 산출하여 상술한 인가부(191)에 제공하게 된다.Therefore, the third calculation unit 194 calculates the information of the electric field required from the empty filter 160 to correct the shape of the electron beam and provides it to the application unit 191 described above.

지금부터는 상술한 전자빔 정렬 기능을 구비한 주사전자현미경의 작동에 대해서 간략하게 설명한다.The operation of the scanning electron microscope with the electron beam alignment function described above will now be briefly described.

먼저, 광소스(120)로부터 주사되는 전자빔은 집속렌즈(130), 어퍼쳐(140)를 통과한 후에 빈필터(160)에 도달하게 된다. 이때, 빈필터(160)는 제어부(190)에 의하여 최종전기장과 최종자기장을 발생시킨다.First, the electron beam scanned from the light source 120 reaches the empty filter 160 after passing through the focusing lens 130 and the aperture 140. In this case, the empty filter 160 generates the final electric field and the final magnetic field by the controller 190.

빈필터(160)로부터 발생하는 전기장 및 자기장에 의하여 정전기력 및 자기력이 가해진 전자빔은 대물렌즈(170)를 통과하여 시료(S) 상의 목표점에 도달하게 되고, 전자빔이 입사된 후에 시료(S)로부터 2차전자를 포함하는 방출전자가 방출된다.The electron beam applied with electrostatic force and magnetic force by the electric and magnetic fields generated from the empty filter 160 passes through the objective lens 170 to reach the target point on the sample S. After the electron beam is incident, 2 Emitting electrons, including the charge electrons, are emitted.

이러한 방출전자는 상측으로 이동하여 빈필터(160)를 통과하며, 빈필터(160)로부터 인가되는 최종전기장과 최종자기장에 의한 정전기력 및 자기력의 영향을 받은 방출전자는 이동궤적이 디텍터(150) 측으로 편향되어 디텍터(150)에 최종 입사됨으로써 검출된다.The emission electrons move upward and pass through the empty filter 160. The emission electrons affected by the electrostatic and magnetic forces by the final electric field and the final magnetic field applied from the empty filter 160 move to the detector 150. It is deflected and detected by the last incident on the detector 150.

한편, 상술한 전자빔 정렬 기능을 구비한 주사전자현미경의 작동에 있어서 빈필터를 제어하는 방법의 제1실시예에 대해서 상세하게 후술한다.Meanwhile, a first embodiment of the method for controlling the empty filter in the operation of the scanning electron microscope with the electron beam alignment function described above will be described in detail below.

도 3은 본 발명의 제1실시예에 따른 주사전자현미경용 빈필터 제어방법의 흐름도이다.3 is a flowchart of a method of controlling an empty filter for a scanning electron microscope according to a first embodiment of the present invention.

도 3을 참조하면, 본 발명의 제1실시예에 따른 주사전자현미경용 빈필터 제어방법(S100)은 빈필터(160)를 이용하여 전자빔을 정렬하기 위한 것으로서, 산출단계(S110)와 인가단계(S120)를 포함한다.Referring to FIG. 3, the scanning filter microscopy empty filter control method (S100) according to the first exemplary embodiment of the present invention is for aligning an electron beam using the empty filter 160. (S120).

상기 산출단계(S110)는 빈필터(160)에 인가되는 최종전기장 및 최종자기장 정보를 산출, 획득하는 단계로서, 초기정보 획득단계(S111)와 정렬정보 획득단계(S112)를 포함한다.The calculating step S110 is a step of calculating and obtaining final electric field and final magnetic field information applied to the empty filter 160, and includes an initial information obtaining step S111 and an alignment information obtaining step S112.

도 4는 도 3의 주사전자현미경용 빈필터 제어방법의 초기정보 획득단계를 설명하기 위한 것이다.FIG. 4 illustrates an initial information acquisition step of the empty filter control method for the scanning electron microscope of FIG. 3.

도 4를 참조하여 설명하면, 상기 초기정보 획득단계(S111)는 빈필터(160)를 하방으로 통과하는 전자빔이 궤적의 편향 없이 수직하방으로 이동되도록 하는 동시에, 빈필터(160)를 상방으로 통과하는 방출전자의 이동궤적은 편향되어 방출전자가 디텍터(150) 측으로 이동하도록 하기 위하여 빈필터로부터 요구되는 초기전기장 및 초기자기장 정보를 제1산출부(192)를 통하여 산출, 획득하는 단계이다.Referring to FIG. 4, in the initial information acquiring step S111, the electron beam passing downward through the empty filter 160 is moved vertically downward without deflection of the trajectory, and simultaneously passes upward through the empty filter 160. The movement trajectory of the emitted electrons is deflected to calculate and obtain the initial electric field and the initial magnetic field information required from the empty filter in order for the emitted electrons to move toward the detector 150 through the first calculation unit 192.

다시 설명하면, 측정 대상이 되는 시료(S)의 영역이 빈필터(160)의 수직 하방에 있는 상태로 가정하며, 이러한 상태를 초기상태라 정의한다. 이러한 초기상태에서는 빈필터(160)로 인한 전자빔의 궤적 변화는 요구되지 않고, 방출전자의 이동궤적만 디텍터(150) 측으로 편향되도록 한다.In other words, it is assumed that the region of the sample S to be measured is in a state vertically below the empty filter 160, and this state is defined as an initial state. In this initial state, the trajectory change of the electron beam due to the empty filter 160 is not required, and only the movement trajectory of the emission electrons is deflected toward the detector 150.

따라서, 제1산출부(192)에서는 전자빔에 가해지는 정전기력(FM,I1)과 방출전자에 가해지는 정전기력(FM,I2)은 동일하되, 전자빔에 가해지는 자기력(FE,I1)과 방출전자에 가해지는 자기력(FE,I2)은 반대방향의 동일한 세기를 갖도록 초기전기장 및 초기자기장 정보를 설정한다.Therefore, in the first calculation unit 192, the electrostatic force F M, I1 applied to the electron beam and the electrostatic force F M, I2 applied to the emission electrons are the same, but the magnetic force F E, I1 applied to the electron beam is the same. The magnetic force F E, I2 applied to the emission electrons sets the initial electric field and the initial magnetic field information to have the same intensity in the opposite direction.

상기 정렬정보 획득단계(S112)는 전자빔의 입사 목표점이 수직하방이 아닌 경우에, 전자빔을 정렬하기 위하여 빈필터(160)에 요구되는 정렬전기장 및 정렬자기장 정보를 제2산출부(193)를 통하여 산출, 획득하는 단계로서, 목표점 획득단계(S113)와 거리측정단계(S114)와 최종 수평력 산출단계(S115)와 정렬정보 산출단계(S116)를 포함한다.In the obtaining of the alignment information (S112), when the incident target point of the electron beam is not vertically downward, the second field unit 193 receives the alignment electric field and the alignment magnetic field information required for the empty filter 160 to align the electron beam. The calculating and acquiring step includes a target point obtaining step S113, a distance measuring step S114, a final horizontal force calculating step S115, and an alignment information calculating step S116.

도 5는 도 3의 주사전자현미경용 빈필터 제어방법의 목표점 획득단계를 설명하기 위한 것이다.5 is for explaining a target point acquisition step of the empty filter control method for the scanning electron microscope of FIG.

도 5를 참조하여 설명하면, 상기 목표점 획득단계(S113)는 외부로부터 시료(S) 상에서의 목표점(T)을 입력받거나 또는 내부적으로 임의의 목표점(T)을 지정하여 획득하는 단계이다.Referring to FIG. 5, the target point obtaining step S113 is a step of receiving a target point T on the sample S from the outside or by specifying an arbitrary target point T internally.

상기 거리측정단계(S114)는 전자빔에 정전기력 및 자기력이 가해지는 빈필터(160)의 위치로부터 시료(S)의 목표점(T)까지의 직선거리(d)를 감지 또는 측정하는 단계이다.The distance measuring step S114 is a step of detecting or measuring the linear distance d from the position of the empty filter 160 to which the electrostatic force and the magnetic force are applied to the electron beam from the target point T of the sample S.

상기 최종 수평력 산출단계(S115)는 상술한 거리측정단계(S114)에서 측정되는 빈필터(160)로부터 목표점(T)까지의 직선거리(d)와 전자빔의 이동속도 등을 고려하여, 전자빔이 목표점(T)에 도달되기 위하여 전자빔에 인가되어야 하는 수평방향의 힘, 즉, 최종 수평력을 산출하는 단계이다.The final horizontal force calculating step (S115) is a target point in consideration of the linear distance (d) from the empty filter 160 measured in the above-described distance measuring step (S114) to the target point (T) and the moving speed of the electron beam. It is a step of calculating the horizontal force, that is, the final horizontal force, which should be applied to the electron beam in order to reach (T).

도 6은 도 3의 주사전자현미경용 빈필터 제어방법의 정렬정보 산출단계를 설명하기 위한 것이다.FIG. 6 illustrates an operation of calculating alignment information of the empty filter control method for the scanning electron microscope of FIG. 3.

도 6을 참조하여 설명하면, 상기 정렬정보 산출단계(S116)는 상술한 최종 수평력 산출단계(S115)에서 산출되는 최종 수평력이 전자빔에 제공되되, 방출전자에는 영향을 미치지 않도록 하기 위하여 빈필터(160)로부터 요구되는 정렬전기장 및 정렬자기장을 산출하는 단계이다.Referring to FIG. 6, in the alignment information calculating step S116, the final horizontal force calculated in the final horizontal force calculating step S115 is provided to the electron beam, but the empty filter 160 does not affect the emitted electrons. Calculating the required alignment electric field and the alignment magnetic field.

즉, 본 단계에서는 빈필터를(160)를 하방으로 통과하는 전자빔에 가해지는 정전기력(FM,A1) 및 자기력(FE,A1)의 조합이 상기의 최종 수평력과 일차되도록 하되, 빈필터(160)를 상방으로 통과하는 방출전자에 가해지는 정전기력(FM,A2)과 자기력(FE,A2)이 상쇄되어 방출전자에는 영향을 미치지 않도록 정렬전기장 및 정렬자기장를 산출한다.That is, in this step, the combination of the electrostatic force (F M, A1 ) and the magnetic force (F E, A1 ) applied to the electron beam passing downward through the empty filter 160 is the first horizontal force, but the empty filter ( Electrostatic forces (F M, A2 ) and magnetic forces (F E, A2 ) applied to the emission electrons passing upward through 160 are canceled to calculate the alignment electric field and the alignment magnetic field so as not to affect the emission electrons.

도 7은 도 3의 주사전자현미경용 빈필터 제어방법의 인가단계를 설명하기 위한 것이다.FIG. 7 illustrates an application step of the empty filter control method for the scanning electron microscope of FIG. 3.

도 7을 참조하여 설명하면, 상기 인가단계(S120)는 상술한 산출단계(S110)에서 획득되는 초기전기장, 초기자기장 및 정렬전기장, 정렬자기장을 조합하여 최종전기장 및 최종자기장을 산출하고 이러한 정보를 이용하여 빈필터(160)로부터 최종전기장 및 최종자기장이 발생하도록 함으로써, 빈필터(160)를 통과하는 전자빔이 시료(S) 상에서 원하는 목표점(T)에 도달하도록 하는 동시에 시료(S)로부터 방출되는 방출전자가 디텍터(150)에 입사될 수 있도록 제어한다.Referring to FIG. 7, the applying step S120 calculates the final electric field and the final magnetic field by combining the initial electric field, the initial magnetic field and the alignment electric field, and the alignment magnetic field obtained in the calculating step S110. By using this to generate the final electric field and the final magnetic field from the empty filter 160, the electron beam passing through the empty filter 160 to reach the desired target point (T) on the sample (S) while being emitted from the sample (S) The emission electrons are controlled to be incident on the detector 150.

다시 말해, 본 단계에서는 인가부(191)가 제1산출부(192)에 의하여 계산, 획득되는 초기전기장 및 초기자기장 정보와 제2산출부(193)에 의하여 획득되는 보정전기장 및 보정자기장 정보를 통합하여 최종전기장 및 최종자기장을 산출하고, 빈필터로부터 최종전기장 및 최종자기장이 발생하도록 하는 것이다.In other words, in this step, the applying unit 191 calculates the initial electric field and initial magnetic field information calculated and obtained by the first calculating unit 192 and the correction electric field and correction magnetic field information obtained by the second calculating unit 193. By integrating, the final and final magnetic fields are calculated and the final and final magnetic fields are generated from the empty filter.

다음으로, 본 발명의 제2실시예에 따른 주사전자현미경용 빈필터 제어방법(S200)에 대해서 후술한다.Next, the empty filter control method (S200) for the scanning electron microscope according to the second embodiment of the present invention will be described later.

도 8은 본 발명의 제2실시예에 따른 주사전자현미경용 빈필터 제어방법의 흐름도이다.8 is a flowchart of a method of controlling a blank filter for a scanning electron microscope according to a second embodiment of the present invention.

도 8을 참조하면, 본 발명의 제2실시예에 따른 주사전자현미경용 빈필터 제어방법(S200)은 빈필터(160)를 이용하여 전자빔을 정렬하기 위한 것으로서, 산출단계(S110)와 인가단계(S120)를 포함한다.Referring to FIG. 8, the scanning filter microscopic empty filter control method (S200) according to the second exemplary embodiment of the present invention is for aligning an electron beam using the empty filter 160. (S120).

상기 산출단계(S110)는 빈필터(160)에 인가되는 최종전기장 및 최종자기장 정보를 산출, 획득하는 단계로서, 초기정보 획득단계(S111)와 정렬정보 획득단계(S112)와 보정정보 획득단계(S217)를 포함하며, 초기정보 획득단계(S111) 및 정렬정보 획득단계(S112)는 제1실시예에서 상술한 것과 동일한 것이므로 중복설명은 생략한다.The calculating step (S110) is a step of calculating and obtaining final electric field and final magnetic field information applied to the empty filter 160. The initial information obtaining step (S111), the alignment information obtaining step (S112), and the correction information obtaining step ( S217), and the initial information acquiring step S111 and the alignment information acquiring step S112 are the same as described above in the first embodiment, and thus redundant description is omitted.

도 9는 도 8의 주사전자현미경용 빈필터 제어방법의 보정정보 획득단계를 설명하기 위한 것이다.FIG. 9 illustrates an operation of obtaining correction information of the empty filter control method for the scanning electron microscope of FIG. 8.

도 9를 참조하여 설명하면, 상기 보정정보 획득단계(S217)는 빈필터(160)를 통과하는 전자빔의 비정상적인 형상을 변형시킴으로써 정상형태로 보정하기 위하여 빈필터(160)로부터 요구되는 보정전기장을 제3산출부(194)를 통하여 산출, 획득하는 단계이다.Referring to FIG. 9, the correction information acquiring step S217 may remove the correction electric field required from the empty filter 160 to correct the abnormal shape of the electron beam passing through the empty filter 160 to the normal shape. It is the step of calculating and acquiring through the three calculating unit 194.

즉, 전자빔의 이동방향에 수직 단면의 형상이 원형이 아닌 타원형인 경우와 같이 비정상 전자빔을 이용한 시료(S) 측정 시에는 측정(S) 신뢰도가 저하되는 문제가 발생하므로, 제3산출부(194)는 이를 보정하기 위하여 빈필터(160)부로부터 요구되는 보정전기장 정보를 산출한다. 다시 말해, 제3산출부(194)는 전자빔에 가해지는 정전기력(FC)이 전자빔의 형상을 보정하기 위하여 빈필터(160)로부터 요구되는 보정전기장을 산출하는 것이다.That is, when measuring the sample S using the abnormal electron beam, such as the case where the shape of the cross section perpendicular to the moving direction of the electron beam is not a circular shape, the measurement S reliability decreases, and thus, the third calculation unit 194 ) Calculates the correction electric field information required from the empty filter 160 to correct this. In other words, the third calculation unit 194 calculates a correction electric field required from the empty filter 160 in order for the electrostatic force F C applied to the electron beam to correct the shape of the electron beam.

따라서, 산출되는 보정전기장 정보는 인가부(191)에 전달되어 상기 인가단계(S191)에서는 이러한 보정전기장 정보를 고려한 최종전기장이 빈필터(160)로부터 발생하도록 제어한다.Therefore, the calculated corrected electric field information is transmitted to the applying unit 191, and in the applying step (S191), the final electric field in consideration of the corrected electric field information is generated from the empty filter 160.

본 발명의 권리범위는 상술한 실시예에 한정되는 것이 아니라 첨부된 특허청구범위 내에서 다양한 형태의 실시예로 구현될 수 있다. 특허청구범위에서 청구하는 본 발명의 요지를 벗어남이 없이 당해 발명이 속하는 기술 분야에서 통상의 지식을 가진 자라면 누구든지 변형 가능한 다양한 범위까지 본 발명의 청구범위 기재의 범위 내에 있는 것으로 본다.The scope of the present invention is not limited to the above-described embodiment, but may be embodied in various forms of embodiments within the scope of the appended claims. Without departing from the gist of the invention claimed in the claims, it is intended that any person skilled in the art to which the present invention pertains falls within the scope of the claims described in the present invention to various extents which can be modified.

별도의 추가적인 장치 없이 빈필터를 이용하여 시료 상의 원하는 목표점에 전자빔이 도달하도록 제어할 수 있는 주사전자현미경용 빈필터 제어방법이 제공된다.The empty filter control method for a scanning electron microscope which can control an electron beam to reach a desired target point on a sample using an empty filter without a separate additional apparatus is provided.

Claims (9)

광소스로부터 생성되는 전자빔이 빈필터를 통과하여 시료에 입사된 후 방출되는 방출전자를 상기 빈필터에 통과시켜 디텍터에 입사시킴으로써 검출하는 주사전자 현미경에 이용되는 방법으로서,A method used in a scanning electron microscope for detecting an electron beam generated from a light source by passing through a bin filter and entering a sample and then emitting emitted electrons through the bin filter and entering the detector. 상기 빈필터를 통과한 전자빔이 상기 시료의 목표점에 도달되도록 하는 동시에 상기 시료로부터 방출되어 상기 빈필터를 통과하는 방출전자가 상기 디텍터에 도달되도록 하기 위하여 상기 빈필터에 인가되어야 하는 최종전기장 및 최종자기장을 산출하는 산출단계;The final electric field and the final magnetic field that must be applied to the empty filter so that the electron beam passing through the empty filter reaches the target point of the sample and at the same time, the emission electrons emitted from the sample and passing through the empty filter reach the detector. Calculating step of calculating; 상기 빈필터에 상기 최종전기장 및 상기 최종자기장을 인가하는 인가단계;를 포함하는 것을 특징으로 하는 주사전자현미경용 빈필터 제어방법.And an applying step of applying the final electric field and the final magnetic field to the empty filter. 제1항에 있어서,The method of claim 1, 상기 산출단계는 상기 빈필터를 통과한 전자빔이 수직하방으로 이동되도록 하는 동시에 상기 시료로부터 방출되어 상기 빈필터를 통과하는 방출전자가 상기 디텍터에 도달되도록 하기 위하여 상기 빈필터에 인가되는 초기전기장 및 초기자기장을 획득하는 초기정보 획득단계; 및 상기 전자빔이 상기 시료의 목표점에 도달되도록 하기 위하여 상기 빈필터에 인가되어야 하는 정렬전기장 및 정렬자기장을 획득하는 정렬정보 획득단계;를 포함하는 것을 특징으로 하는 주사전자현미경용 빈필터 제어방법.The calculating step includes an initial electric field and an initial stage applied to the empty filter so that the electron beam passing through the empty filter is moved vertically downward and at the same time, the electrons emitted from the sample to pass through the empty filter reach the detector. Initial information obtaining step of obtaining a magnetic field; And an alignment information acquiring step of acquiring an alignment electric field and an alignment magnetic field to be applied to the empty filter so that the electron beam reaches a target point of the sample. 제2항에 있어서,The method of claim 2, 상기 인가단계 이전에 상기 전자빔의 단면형상을 보정하기 위해 상기 빈필터에 필요한 보정전기장을 획득하는 보정정보 획득단계를 더 포함하며,And a correction information acquiring step of acquiring a correction electric field required for the empty filter to correct the cross-sectional shape of the electron beam before the applying step. 상기 인가단계에서는 상기 보정정보 획득단계에서 상기 빈필터에 인가되는 최종전기장은 상기 보정전기장정보를 포함하는 것을 특징으로 하는 주사전자현미경용 빈필터 제어방법.And in the applying step, the final electric field applied to the empty filter in the obtaining correction information includes the corrected electric field information. 제2항에 있어서,The method of claim 2, 상기 정렬정보 획득단계는 상기 시료상의 상기 목표점의 위치를 획득하는 목표점 획득단계; 상기 빈필터로에서부터 상기 목표점 직선거리를 측정하는 거리측정단계; 상기 전자빔이 상기 목표점의 위치에 도달하기 위하여 상기 빈필터로부터 상기 전자빔에 제공되어야 하는 최종 수평력을 산출하는 최종 수평력 산출단계;를 포함하는 것을 특징으로 하는 주사전자현미경용 빈필터 제어방법.The alignment information acquiring step may include: a target point acquiring step of acquiring a position of the target point on the sample; A distance measuring step of measuring the target point linear distance from the bin filter; And a final horizontal force calculation step of calculating a final horizontal force to be provided to the electron beam from the empty filter so that the electron beam reaches the position of the target point. 제4항에 있어서,The method of claim 4, wherein 상기 정렬정보 획득단계는 상기 최종 수평력 산출단계 이후에,The obtaining of the alignment information is performed after the final horizontal force calculating step, 상기 전자빔에 상기 최종 수평력이 가해지도록 하는 동시에 상기 빈필터를 통과하는 상기 방출전자가 상기 디텍터에 도달하도록 하기 위하여 상기 빈필터로부터 요구되는 정렬전기장 및 정렬자기장을 산출하는 정렬정보 산출단계를 더 포함하는 것을 특징으로 하는 주사전자현미경용 빈필터 제어방법.And an alignment information calculating step of calculating an alignment electric field and an alignment magnetic field required from the empty filter to allow the final horizontal force to be applied to the electron beam and to allow the emission electrons passing through the empty filter to reach the detector. Empty filter control method for a scanning electron microscope, characterized in that. 제5항에 있어서,The method of claim 5, 상기 정렬전기장에 의하여 상기 전자빔에 가해지는 정전기력은 상기 정렬자기장에 의하여 상기 전자빔에 가해지는 자기력과 동일한 방향의 동일한 크기를 가지는 것을 특징으로 하는 주사전자현미경용 빈필터 제어방법.The electrostatic force applied to the electron beam by the alignment electric field has the same magnitude in the same direction as the magnetic force applied to the electron beam by the alignment magnetic field. 광소스로부터 생성되는 전자빔을 시료에 입사시켜 상기 시료로부터 방출되는 방출전자를 측정하는 주사전자현미경에 있어서,In a scanning electron microscope for measuring the emission electrons emitted from the sample by injecting an electron beam generated from the light source into the sample, 상기 시료와 상기 시료 사이에 배치되며 상기 방출전자를 검출하는 디텍터;A detector disposed between the sample and the sample and detecting the emission electrons; 상기 디텍터의 하방에 배치되며, 자기장 및 전기장을 발생시킴으로써 상기 전자빔 및 상기 방출전자의 이동궤적을 제어하는 빈필터;A bin filter disposed below the detector and configured to control a movement trajectory of the electron beam and the emission electrons by generating a magnetic field and an electric field; 상기 빈필터에 인가되는 전기장 및 자기장을 제어하는 제어부;를 포함하는 것을 특징으로 하는 전자빔 정렬 기능을 구비한 주사전자현미경.And a control unit for controlling an electric field and a magnetic field applied to the empty filter. The scanning electron microscope having an electron beam alignment function of the empty filter. 제6항에 있어서,The method of claim 6, 상기 제어부는 상기 빈필터를 통과한 전자빔이 수직하방으로 이동하도록 상기 빈필터에 가해지는 최초전기장 및 최초자기장을 산출하는 제1산출부; 상기 시료 상에서 상기 전자빔이 원하는 목표점에 도달되도록 상기 빈필터에 가해지는 정렬전기장 및 정렬자기장을 산출하는 제2산출부;를 포함하는 것을 특징으로 하는 전자빔 정렬 기능을 구비한 주사전자현미경.The control unit may include a first calculation unit configured to calculate an initial electric field and an initial magnetic field applied to the empty filter so that the electron beam passing through the empty filter moves vertically downward; And a second calculation unit configured to calculate an alignment electric field and an alignment magnetic field applied to the empty filter so that the electron beam reaches a desired target point on the sample. 제6항 또는 제7항에 있어서,The method according to claim 6 or 7, 상기 제어부는 상기 빈필터를 통과하는 전자빔 단면의 형상을 제어하기 위하여 상기 빈필터에 가해지는 보정전기장을 산출하는 제3산출부를 더 포함하는 것을 특징으로 하는 전자빔 정렬 기능을 구비한 주사전자현미경.And the control unit further comprises a third calculation unit for calculating a correction electric field applied to the empty filter to control the shape of the cross section of the electron beam passing through the empty filter.
PCT/KR2011/008082 2011-10-27 2011-10-27 Scanning electron microscope having an electronic beam aligning function, and method for controlling a wien filter for a scanning electron microscope Ceased WO2013062158A1 (en)

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Publication number Priority date Publication date Assignee Title
CN110660633A (en) * 2019-08-28 2020-01-07 中科晶源微电子技术(北京)有限公司 Wien filter and charged particle beam imaging apparatus
US11239044B2 (en) 2019-08-28 2022-02-01 Zhongke Jingyuan Electron Limited, Beijing (CN) Wien filter and charged particle beam imaging apparatus
CN110660633B (en) * 2019-08-28 2022-03-25 中科晶源微电子技术(北京)有限公司 Wien filter and charged particle beam imaging apparatus
US11756761B2 (en) 2019-08-28 2023-09-12 Zhongke Jingyuan Electron Limited, Beijing (CN) Wien filter and charged particle beam imaging apparatus

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