WO2013058379A1 - Microwave heating device and microwave heating method - Google Patents

Abstract

[Problem] To provide a microwave heating device and a microwave heating method whereby it is possible to appropriately heat either a film of a conductor or semiconductor or a film of a dispersion in which a conductor or semiconductor has been dispersed. [Solution] Microwaves in a wavelength range of 1 m to 1 mm are supplied to a waveguide tube (16a), and a substrate (24), on which is formed either a film of a conductor or semiconductor or a film of a dispersion in which a conductor or semiconductor has been dispersed, is placed or moved inside the waveguide tube (16a) so that the surface on which the film is formed is substantially parallel to the direction of the electric force lines of the microwaves.

Description

Microwave heating apparatus and microwave heating method

The present invention relates to a microwave heating apparatus and a microwave heating method.

Conventionally, a technique of heat-treating a material such as a metal or a thin film thereof using a microwave is known. When the microwave is used, the heating object can be selectively heated by generating heat internally by the action of an electric field or a magnetic field.

As an example of microwave heating, in Patent Document 1 (particularly paragraph 0073, etc.) described below, a thin film formed from an inorganic metal salt material that is a precursor of a metal oxide semiconductor is subjected to atmospheric pressure (in the presence of oxygen). A technique for irradiating a microwave and converting it into a semiconductor is disclosed.

Further, in Patent Document 2 (particularly, paragraph 0024), heating is performed while passing a workpiece such as a cemented carbide, cermet, or ceramic cutting plate through a tunnel in which microwave sources (magnetrons) are arranged at equal intervals. Techniques to do this are disclosed.

Further, in the following Patent Document 3 (particularly paragraph 0019, etc.), microwave heating is performed by efficiently installing a grindstone material at a position where the electric field or magnetic field of the standing wave (combination of incident wave and reflected wave) is maximum. An apparatus is disclosed.

JP 2009-177149 A JP 2006-300309 A JP 2010-274383 PR

In general, when a conductor or semiconductor film or a film of a dispersion in which a conductor or semiconductor is dispersed is heated by microwaves, the substrate on which these films or films are formed due to the occurrence of sparks may be appropriately heated. There is a problem that it is difficult. The above conventional technology does not disclose a configuration that solves this problem.

An object of the present invention is to provide a microwave heating apparatus and a microwave heating method capable of appropriately heating a conductor or semiconductor film or a dispersion film in which a conductor or semiconductor is dispersed.

In order to achieve the above object, one embodiment of the present invention is a microwave heating apparatus, comprising: a waveguide; and a microwave supply means for supplying a microwave having a wavelength range of 1 m to 1 mm to the waveguide. A substrate in which a conductor or semiconductor film or a dispersion film in which a conductor or semiconductor is dispersed is formed in the waveguide, and the film forming surface is arranged substantially parallel to the direction of the electric lines of force of the microwave. Or a substrate supply means to be moved.

Further, the microwave heating apparatus includes a plurality of the waveguides arranged adjacent to each other in a direction parallel to the microwave traveling direction and perpendicular to the microwave traveling direction, and the microwaves in the plurality of waveguides are arranged. The phase of the waves is maintained at a state shifted by 90 degrees from each other, and the substrate supply means passes the substrate continuously through the plurality of waveguides.

In addition, the thickness of the film is preferably 10 nm to 1 mm.

The substrate is made of a base material containing polyimide, polyester, polycarbonate, paper phenol, glass epoxy, alumina, silica, zirconia, titania, silicon or silicon carbide.

The conductor or semiconductor is gold, silver, copper, aluminum, nickel, graphite, graphene, carbon nanotube, zinc oxide, tin oxide, or indium tin oxide.

Another embodiment of the present invention is a microwave heating method, wherein a microwave having a wavelength range of 1 m to 1 mm is supplied into a waveguide, and a conductor or semiconductor film or a conductor or semiconductor is provided in the waveguide. The substrate on which the film of the dispersion in which the film is dispersed is arranged or moved substantially parallel to the direction of the electric lines of force of the microwave.

According to the present invention, the generation of sparks can be suppressed and heated appropriately by making the surface of the substrate on which the film is formed substantially parallel to the direction of the lines of electric force of the microwaves.

It is a figure showing the example of composition of the microwave heating device concerning an embodiment. It is a figure which shows the structural example of the waveguide which comprises a heating part. It is explanatory drawing of the electromagnetic field distribution of the microwave which generate | occur | produces in a waveguide. It is sectional drawing of the board | substrate with which the film | membrane of the dispersion | distribution which disperse | distributed the film | membrane of a conductor or a semiconductor or a conductor or a semiconductor was formed. It is a figure which shows the other structural example of the microwave heating device concerning embodiment. It is explanatory drawing of the application | coating area | region of the ink formed in the slide glass. 6 is an explanatory diagram of the arrangement of substrates in a waveguide in Comparative Example 1. FIG. 6 is an explanatory diagram of the arrangement of substrates in a waveguide in Comparative Example 1. FIG.

Hereinafter, modes for carrying out the present invention (hereinafter referred to as embodiments) will be described with reference to the drawings.

FIG. 1 shows a configuration example of a microwave heating apparatus according to this embodiment. In FIG. 1, the microwave heating apparatus includes a microwave generation unit 10, a monitor unit 12, a tuner unit 14, a heating unit 16, a heated object supply unit 18, and a movable short-circuit unit 20.

The microwave generation unit 10 generates a microwave to be supplied to the waveguide constituting the heating unit 16. Here, the microwave is an electromagnetic wave having a wavelength range of 1 m to 1 mm (frequency is 300 MHz to 300 GHz).

The monitor unit 12 is a device that monitors the incident power of the microwave generated by the microwave generation unit 10 and the reflected power from the heating unit 16.

The tuner unit 14 generates an electromagnetic wave having a phase opposite to that of the reflected wave generated when the microwave enters the waveguide constituting the heating unit 16 to cancel the reflected wave, and the reflected wave is transmitted to the microwave generating unit 10. Prevent return.

The heating unit 16 is configured by a waveguide as described above, and heats an object to be heated by microwaves. As will be described later, in the present embodiment, an object to be heated is heated using energy of an electric field among microwave energy.

The heated object supply unit 18 includes a microwave leakage prevention mechanism, and supplies the heated object to the waveguide constituting the heating unit 16. The heated object supply unit 18 may be, for example, an opening for supplying the heated object formed in the waveguide. In this case, the object to be heated is manually inserted into the waveguide from the opening. Moreover, it is good also as a structure which supplies a to-be-heated target object in a waveguide with appropriate supply apparatuses, such as roll-to-roll. In the present embodiment, the object to be heated is a conductor or semiconductor film formed on the substrate surface or a dispersion film in which the conductor or semiconductor is dispersed.

In this application, a semiconductor means a substance having a resistivity in the range of 10 ⁻³ Ωcm to 10 ⁶ Ωcm, and a conductor means a substance having a resistivity lower than that of the semiconductor (less than 10 ⁻³ Ωcm).

The movable short-circuit portion 20 maintains the standing wave in the waveguide when the wavelength of the microwave in the waveguide constituting the heating portion 16 is shortened due to the material of the object to be heated and the standing wave changes. The tip portion 20a is arranged at an optimum position for monitoring the reflected power of the monitor unit 12 and maintaining a standing wave.

FIG. 2 shows a configuration example of a waveguide constituting the heating unit 16 (TE10 mode cavity resonator). In FIG. 2, the tuner section 14 is provided on the side of receiving a microwave in the waveguide. In addition, an iris portion 22 is formed at the entrance of the microwave, and the microwave enters the waveguide 16 a through the opening of the iris portion 22. The wave of the microwave Mw in FIG. 2 shows a curve of electric field intensity (the highest point of the wave (amplitude) (the highest point of the curve) is the maximum electric field point, and the lowest point (the lowest limit of the curve is the lowest electric field point)). Yes.

The movable short-circuit portion 20 is provided near the end of the waveguide 16a opposite to the iris portion 22, and the microwave Mw existing between the iris portion 22 and the distal end portion 20a of the movable short-circuit portion 20 is provided. The object to be heated supplied from the object supply unit 18 to be heated, that is, the film formed on the substrate 24 is heated by the electric field. In order to generate a standing wave of the microwave Mw between the iris part 22 and the tip part 20a, the distance L between the iris part 22 and the tip part 20a is set as follows:
L = (2n−1) λg / 2
λg may be a wavelength of the microwave Mw in the waveguide, and n may be a natural number. However, the microwave generated in the waveguide 16a is not limited to a standing wave, and may be a traveling wave.

3 (a), (b), and (c) are explanatory diagrams of the electromagnetic field distribution of the microwave generated in the waveguide 16a.

FIG. 3A is a perspective view of the waveguide 16a, and the waveguide 16a extends in a direction (z-axis direction) orthogonal to the xy plane of the drawing. When a microwave is supplied to the waveguide 16a, an electric field is generated in the y-axis direction (direction perpendicular to the xz plane). The electric lines of force representing the direction and strength of the electric field at this time are indicated by solid arrows. Further, the magnetic field is generated in the x-axis direction orthogonal to the electric field, and the lines of magnetic force representing the direction and strength of the magnetic field are indicated by broken arrows.

FIG. 3B is a cross-sectional view of the waveguide 16a taken along a plane parallel to the xz plane. In FIG. 3 (b), the microwave electric field lines are indicated by white circles (◯) and black circles (●). It is an electric field line in the direction of heading. The magnetic field lines are indicated by broken lines.

As shown in FIG. 3B, the substrate 24 has a surface on which a conductor or semiconductor film or a dispersion film in which the conductor or semiconductor is dispersed is formed on the surface of the microwave in the direction of electric lines of force (direction of electric field). Are arranged in the waveguide 16a in a state of being maintained substantially parallel to or moved in the waveguide 16a. Here, “substantially parallel” means a state in which the surface of the substrate 24 and the direction of the electric force lines of the microwave are parallel or maintain an angle of 30 degrees or less with respect to the direction of the electric force lines. Note that the angle within 30 degrees refers to a state in which the normal line standing on the surface of the substrate 24 and the direction of the electric force lines form an angle of 60 degrees or more. On the surface of the substrate 24, a conductor or semiconductor film or a dispersion film in which the conductor or semiconductor is dispersed is formed as an object to be heated. For this reason, the said film | membrane which is a to-be-heated object formed in the surface of the board | substrate 24 can be heated by the Joule loss and / or dielectric loss by an electric field. When the resistivity of the film is less than 1 MΩcm, Joule loss is dominant, and when it is 1 MΩcm or more, dielectric loss is dominant. Thereby, the electrical resistance of the film can be heated and sintered from the state of the insulator to the state of the conductor. As a result, the resistivity can be lowered even in a dispersion film in which conductors or semiconductors are dispersed.

As described above, the surface of the conductor or semiconductor film formed as the object to be heated or the film of the dispersion film in which the conductor or semiconductor is dispersed is parallel to the direction of the electric lines of microwave or an angle within 30 degrees. Are intersected (substantially parallel), the number of lines of electric force passing through the film is limited, and the occurrence of sparks can be suppressed. In addition, in a microwave electric field, the film containing the conductor or semiconductor can be selectively heated by internal heat generation. Therefore, it is not necessary to heat the entire substrate 24 with an oven or the like. When a semiconductor substrate such as silicon or silicon carbide is used, the substrate itself generates heat when heated by microwaves, but the film is completely sintered in a short time. Accordingly, the substrate 24 and the conductor or semiconductor film formed on the surface thereof or the dispersion film in which the conductor or semiconductor is dispersed can be appropriately heated without being damaged.

FIG. 3C is a cross-sectional view of the waveguide 16a taken along a plane parallel to the yz plane. Also in FIG. 3C, the microwave electric field lines are indicated by solid arrows. In FIGS. 2, 3B, and 3C, the surface of the conductor or semiconductor film formed on the substrate surface or the dispersion film in which the conductor or semiconductor is dispersed is parallel to the yz plane. Although a certain case is illustrated, other arrangements that are substantially parallel to the direction of the electric lines of force of the microwaves, for example, may be arranged to be parallel to the xy plane.

It is preferable that the substrate 24 pass through a region having a high density of electric lines of force (high electric field strength) because it can be heated in a shorter time. At this time, as described above, the surface of the substrate 24 is disposed substantially parallel to the direction of the electric lines of force of the microwave. 2 and 3 illustrate the case where an electric field is generated in the y-axis direction (direction orthogonal to the xz plane) and a magnetic field is generated in the x-axis direction (direction orthogonal to the yz plane). The electric field is generated in the x-axis direction (direction orthogonal to the yz plane), and the magnetic field is generated in the y-axis direction (direction orthogonal to the xz plane).

FIG. 4 shows a cross-sectional view of the substrate 24 on which a conductor or semiconductor film or a dispersion film in which the conductor or semiconductor is dispersed is formed. In FIG. 4, a conductor or semiconductor film 26 or a dispersion film 26 in which a conductor or semiconductor is dispersed is formed on at least one surface of a substrate 24. The thickness of the substrate is preferably in the range of 0.01 to 10 mm. The thickness of the film is in the range of 10 nm to 1 mm, preferably in the range of 100 nm to 100 μm. This is because it is difficult to form a film thinner than 10 nm, and a film thicker than 1 mm increases the number of lines of electric force passing therethrough and easily causes sparks.

Examples of conductors or semiconductors include gold, silver, copper, aluminum, nickel, graphite, graphene, carbon nanotubes, zinc oxide, tin oxide, and indium tin oxide. A known resin can be used as a dispersion medium for dispersing the conductor or semiconductor. Examples of these resins include cellulose, polyvinyl pyrrolidone, polyethylene glycol, polypropylene glycol, and epoxy resin. Examples of the material of the substrate 24 include base materials containing polyimide, polyester, polycarbonate, paper phenol, glass epoxy, alumina, silica, zirconia, titania, silicon, or silicon carbide. The substrate 24 is inserted into the waveguide 16a from the heated object supply unit 18 provided in the waveguide, and the film formation surface is not in the waveguide by the substrate holding and moving means (not shown). It may be arranged in the waveguide or moved in the waveguide so as to be substantially parallel to the direction of the electric lines of force of the microwave.

FIG. 5 shows another configuration example of the microwave heating apparatus according to this embodiment. In FIG. 5, the characteristic point is that the two waveguides 16a are parallel to the traveling direction of the microwave (directions of arrows A1 and A2 in the figure) and adjacent to the direction orthogonal to the traveling direction of the microwave. In other words, the microwave phases in the two waveguides 16a are maintained in a state of being shifted by 90 degrees from each other. In the above description, the term “traveling direction of microwave” is used, but this does not deny that the microwave is a standing wave. This is because the standing wave is generated by the synthesis of traveling waves traveling in opposite directions. In the present embodiment, the two waveguides 16a are arranged in parallel, but the number of the waveguides 16a is not limited to two. An appropriate number of waveguides 16a can be used depending on the shape of the substrate 24 or the like on which the above-mentioned film, which is the object to be heated, is formed, the area to be heated, and other circumstances.

Also in the embodiment shown in FIG. 5, the heated object supply unit 18 is provided, and the substrate 24 is formed with a conductor or semiconductor film or a dispersion film in which the conductor or semiconductor is dispersed. The surface is continuously passed through the waveguide 16a by the substrate holding and moving means (not shown) in a state where the surface is maintained substantially parallel to the direction of the electric lines of microwaves in each waveguide 16a. Here, “continuous passage” means that the substrate 24 passes through one waveguide 16a, and then passes through the waveguide 16a adjacent to this where the phase of the microwave is shifted by 90 degrees. In the example of FIG. 5, the substrate 24 moves in the direction from the top to the bottom (arrow B direction). In addition, the to-be-heated object supply part 18 in this embodiment may also be an opening for supplying the to-be-heated object formed in the waveguide.

Hereinafter, embodiments of the present invention will be specifically described. In addition, the following examples and comparative examples are for facilitating understanding of the present invention, and the present invention is not limited to these examples.

Example 1
A polyimide film manufactured by Toray DuPont Co., Ltd .; Kapton 150EN (film thickness: 37.5 μm) was used as a substrate, and a silver (Ag) paste (Dotite FA-353N manufactured by Fujikura Kasei Co., Ltd.) was applied to the surface of the substrate.

The silver paste was applied by printing a 2 cm × 2 cm square pattern by screen printing on the substrate. The thickness of the printed pattern (silver paste layer) was 15 μm (three-point average value) after drying.

The substrate on which the silver paste was applied and the silver paste layer was formed as described above was subjected to microwave heating using the apparatus shown in FIG. At this time, the substrate 24 was disposed in a direction including the maximum point of the microwave electric field and having the surface coated with the silver paste substantially parallel to the direction of the electric lines of force of the microwave, as described above. The frequency of the used microwave is 2.45 GHz, and the maximum point of the electric field at this time is theoretically a position away from the iris part 22 by λg / 4 (λg is 148 mm when using a microwave of 2.45 GHz). However, when the substrate is set, the microwave traveling through the substrate shortens the wavelength, and the resonance position shifts. Therefore, a microwave detector is arranged at the maximum point of the electric field that is λg / 4 away from the iris part 22, and the position of the plunger is set at the position where the voltage of the voltmeter in the waveguide connected to the microwave detector shows the maximum value. Make fine adjustments. The heating time is 30 to 60 seconds. Thereby, the surface temperature of the silver paste layer rose to about 200 ° C., and the silver particles were sintered to produce a silver film. At this time, the substrate 24 was not damaged by thermal deformation or the like. Further, no spark was generated during microwave heating, and a silver film could be formed on the surface of the substrate 24 without damaging it. The film thickness of the formed silver film was 16 μm. The resistivity of the silver paste layer and the silver film before and after the heat treatment was measured as a three-point average value using a Loresta GP manufactured by Mitsubishi Chemical Analytech Co., Ltd. The measurement results are shown in Table 1.

Example 2
An ink in which aluminum particles were dispersed was prepared by the following procedure.

4.0 g of aluminum powder (RD10-3560, manufactured by Toyo Aluminum Co., Ltd., D50 = 13 μm), 4.0 g of 35% γ-butyrolactone solution of phenoxy type epoxy resin (jER1256, manufactured by Mitsubishi Chemical Corporation), and 4.0 g of γ-butyrolactone are better. Mix to make a uniform dispersant. The particle size of the aluminum powder was measured using a microtrack particle size distribution measuring device MT3000II series USVR manufactured by Nikkiso Co., Ltd.

In the same manner as in Example 1, the dispersant was printed on a substrate surface of Kapton 150EN (film thickness: 37.5 μm) manufactured by Toray DuPont with a square pattern of 2 cm × 2 cm by screen printing, and a film in which aluminum was dispersed (Aluminum dispersion layer) was formed. The film thickness after drying was 83 μm (three-point average value). Thereafter, microwave heating was performed in the same manner as in Example 1. The substrate was not thermally deformed during microwave heating, no spark was generated, and an aluminum film could be formed on the surface without damaging the substrate. The formed aluminum film had a thickness of 102 μm. The resistivity of the aluminum dispersion layer and the aluminum film before and after the heat treatment was measured in the same manner as in Example 1. The measurement results are shown in Table 1.

Example 3
An ink in which copper particles were dispersed was prepared by the following procedure.

Copper powder (1100Y, Mitsui Mining & Mining Co., Ltd., D50 = 1.1 μm) 4.0 g, phenoxy type epoxy resin (jER1256, manufactured by Mitsubishi Chemical Co., Ltd.) 20% γ-butyrolactone solution 2.0 g, and glycerin 1.0 g are mixed well. Thus, a uniform dispersant was obtained. The particle size of the copper powder was measured using a nano particle size distribution measuring device UPA-UT151 manufactured by Nikkiso Co., Ltd.

In the same manner as in Example 1, the above dispersant was printed on a Kapton 150EN (film thickness: 37.5 μm) substrate surface manufactured by Toray DuPont with a square pattern of 2 cm × 2 cm by screen printing, and a film in which copper was dispersed (Copper dispersion layer) was formed. The film thickness after drying was 14 μm (three-point average value). Thereafter, microwave heating was performed in the same manner as in Example 1. A copper film could be formed on the surface of the substrate without causing thermal deformation of the substrate during microwave heating, generation of sparks, and damage to the substrate. The film thickness of the formed copper film was 17 μm. In the same manner as in Example 1, the resistivity of the copper dispersion layer and the copper film before and after the heat treatment was measured. The measurement results are shown in Table 1.

As shown in Table 1, the silver paste layer before the heat treatment of Example 1 had a resistivity of 2.12E-04 (2.12 × 10 ⁻⁴ ) Ωcm after the microwave heat treatment. In the silver film, the resistivity decreased to 6.81 × 10 ⁻⁶ Ωcm. Moreover, in the aluminum dispersion layer formed with the ink in which the aluminum particles of Example 2 were dispersed, the resistivity could not be measured (the resistivity was higher than the upper limit of measurement of the measurement apparatus), but after the microwave heat treatment In the aluminum film, the resistivity decreased to 4.39 × 10 ⁻⁵ Ωcm. Moreover, in the copper dispersion layer formed with the ink in which the copper particles of Example 3 were dispersed, the resistivity could not be measured (the resistivity was higher than the measurement upper limit of the measuring device), but after the microwave heat treatment In the copper film, the resistivity decreased to 3.42 × 10 ⁻³ Ωcm.

As described above, a metal film having a low resistivity could be formed by forming a dispersion film of silver, aluminum, and copper on a substrate and performing microwave heating. According to the present example, each metal particle could be internally heated without generating a microwave spark, and the resistivity of the metal film could be reduced efficiently.

Comparative Example 1
In the same manner as in Example 1, the silver paste was printed in a square pattern of 2 cm × 2 cm by screen printing on the substrate surface of Kapton 150EN (film thickness: 37.5 μm) manufactured by Toray DuPont. The thickness of the printed pattern (silver paste layer) was 15 μm (three-point average value) after drying.

The substrate 24 on which a silver paste layer is formed by applying a silver paste as described above is placed in the waveguide shown in FIGS. 2, 3B, and 3C, as shown in FIGS. Arranged as shown in (c), microwave heating was performed. In the arrangement of the substrate 24 of Comparative Example 1, as shown in FIGS. 7, 8B, and 8C, the surface of the substrate 24 coated with the silver paste is in the direction of the electric lines of force of the microwave. The direction is substantially orthogonal. For this reason, most of the electric field lines of microwaves are received by the coated surface of the silver paste, a spark is generated, and the substrate 24 and the silver paste layer are damaged. From this result, it can be seen that the direction of the substrate surface needs to be arranged in a direction substantially parallel to the direction of the electric force lines of the microwave as in Examples 1 to 3.

Comparative Examples 2-4
In Examples 1 to 3, external heating was performed at 200 ° C. for 1 hour using an electric oven (a constant temperature bath) instead of microwaves, and the resistivity of each metal dispersion layer and each metal film before and after the heat treatment was measured. The measurement results are shown in Table 2.

As shown in Table 2, the resistivity cannot be measured for an aluminum dispersion layer formed using an ink in which aluminum particles are dispersed and a copper dispersion layer formed using an ink in which copper particles are dispersed. (The resistivity was higher than the upper limit of measurement of the measuring device). Moreover, it turns out that the resistivity (film | membrane silver paste layer) formed using Ag paste is higher than the case of a microwave heat processing (Example 1).

Comparative Example 5
Two pieces of Kapton tape were laminated and pasted on a 2.6 × 7.6 cm slide glass (thickness 2 mm) to produce a 1 × 6 cm frame as shown in FIG. Each ink produced in Examples 2 and 3 was uniformly applied with a glass rod in this frame, and then dried in a thermostatic bath at 100 ° C. for 1 hour to prepare a pre-dried sample.

Next, the pre-dried sample was heated at 500 ° C., and the resistivity was measured after the heat treatment. In the film formed using the ink in which the copper particles were dispersed, the resistivity could not be measured (the resistivity was higher than the measurement upper limit of the measuring device). On the other hand, the resistivity of the film formed using the ink in which the aluminum particles are dispersed decreased to 1.76E-4 (1.76 × 10 ⁻⁴ ) Ωcm, which is higher than that of Example 2. Single-digit resistivity was high.

10 microwave generation part, 12 monitor part, 14 tuner part, 16 heating part, 16a waveguide, 18 heated object supply part, 20 movable short-circuit part, 20a tip part, 22 iris part, 22a plunger, 24 substrate , 26 membrane.

Claims (6)

A waveguide;
Microwave supply means for supplying a microwave having a wavelength range of 1 m to 1 mm to the waveguide;
A substrate in which a conductor or semiconductor film or a dispersion film in which a conductor or semiconductor is dispersed is formed in the waveguide, and the film formation surface is arranged substantially parallel to the direction of the electric lines of force of the microwave, Or a substrate supply means to be moved;
A microwave heating apparatus comprising: A plurality of the waveguides are arranged adjacent to each other in a direction parallel to the microwave traveling direction and perpendicular to the microwave traveling direction, and the phases of the microwaves in the plurality of waveguides are shifted from each other by 90 degrees. 2. The microwave heating apparatus according to claim 1, wherein the substrate supply means continuously passes the substrate through the plurality of waveguides while maintaining the state. 3. The microwave heating apparatus according to claim 1, wherein the thickness of the film is 10 nm to 1 mm. 4. The substrate according to claim 1, wherein the substrate is made of a base material containing polyimide, polyester, polycarbonate, paper phenol, glass epoxy, alumina, silica, zirconia, titania, silicon or silicon carbide. The microwave heating device according to claim 1. The conductor or semiconductor is gold, silver, copper, aluminum, nickel, graphite, graphene, carbon nanotube, zinc oxide, tin oxide, or indium tin oxide, or any one of claims 1 to 4. A microwave heating apparatus according to 1. Supply microwaves in the wavelength range 1m to 1mm into the waveguide,
A substrate in which a conductor or semiconductor film or a dispersion film in which a conductor or semiconductor is dispersed is formed in the waveguide, and a surface on which the film is formed is arranged substantially parallel to the direction of the electric lines of force of the microwave, Or move,
The microwave heating method characterized by the above-mentioned.

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