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WO2012121972A3 - Sheet wafer growth stabilization - Google Patents

Sheet wafer growth stabilization Download PDF

Info

Publication number
WO2012121972A3
WO2012121972A3 PCT/US2012/027280 US2012027280W WO2012121972A3 WO 2012121972 A3 WO2012121972 A3 WO 2012121972A3 US 2012027280 W US2012027280 W US 2012027280W WO 2012121972 A3 WO2012121972 A3 WO 2012121972A3
Authority
WO
WIPO (PCT)
Prior art keywords
sheet wafer
wafer growth
crucible
interior chamber
growth stabilization
Prior art date
Application number
PCT/US2012/027280
Other languages
French (fr)
Other versions
WO2012121972A2 (en
Inventor
Brian D. Kernan
Weidong Huang
Original Assignee
Evergreen Solar, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evergreen Solar, Inc. filed Critical Evergreen Solar, Inc.
Publication of WO2012121972A2 publication Critical patent/WO2012121972A2/en
Publication of WO2012121972A3 publication Critical patent/WO2012121972A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

An apparatus for forming a sheet wafer has an enclosure forming an interior chamber, and a crucible within the interior chamber and having a top surface. The crucible is configured to contain a volume of molten material. The apparatus also has a wafer guide spaced from the top surface of the crucible and within the interior chamber. The wafer guide forms a channel for passing a growing sheet wafer.
PCT/US2012/027280 2011-03-04 2012-03-01 Sheet wafer growth stabilization WO2012121972A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161449150P 2011-03-04 2011-03-04
US61/449,150 2011-03-04

Publications (2)

Publication Number Publication Date
WO2012121972A2 WO2012121972A2 (en) 2012-09-13
WO2012121972A3 true WO2012121972A3 (en) 2015-06-11

Family

ID=46798706

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2012/027280 WO2012121972A2 (en) 2011-03-04 2012-03-01 Sheet wafer growth stabilization

Country Status (2)

Country Link
TW (1) TW201300583A (en)
WO (1) WO2012121972A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6064596B2 (en) * 2012-02-28 2017-01-25 三菱マテリアル株式会社 Casting apparatus and casting method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4550655A (en) * 1983-08-01 1985-11-05 Franz Haas Waffelmaschinen Industriegesellschaft M.B.H. Apparatus for making wafer blocks
US6189591B1 (en) * 1997-11-19 2001-02-20 Shibaura Mechatronics Corporation Wafer sheet expanding apparatus and pellet bonding apparatus using thereof
US20050032391A1 (en) * 1998-03-13 2005-02-10 Semitool, Inc. Method for processing a semiconductor wafer
US7407550B2 (en) * 2002-10-18 2008-08-05 Evergreen Solar, Inc. Method and apparatus for crystal growth
US20100055398A1 (en) * 2008-08-29 2010-03-04 Evergreen Solar, Inc. Single-Sided Textured Sheet Wafer

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4550655A (en) * 1983-08-01 1985-11-05 Franz Haas Waffelmaschinen Industriegesellschaft M.B.H. Apparatus for making wafer blocks
US6189591B1 (en) * 1997-11-19 2001-02-20 Shibaura Mechatronics Corporation Wafer sheet expanding apparatus and pellet bonding apparatus using thereof
US20050032391A1 (en) * 1998-03-13 2005-02-10 Semitool, Inc. Method for processing a semiconductor wafer
US7407550B2 (en) * 2002-10-18 2008-08-05 Evergreen Solar, Inc. Method and apparatus for crystal growth
US20100055398A1 (en) * 2008-08-29 2010-03-04 Evergreen Solar, Inc. Single-Sided Textured Sheet Wafer

Also Published As

Publication number Publication date
WO2012121972A2 (en) 2012-09-13
TW201300583A (en) 2013-01-01

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