WO2012114825A1 - Junction device, junction system and junction method - Google Patents

Abstract

The present invention is a junction device for joining substrates to one another that has: a first holding member for causing a first substrate to adhere to and be held on the lower surface thereof; a second holding member that is provided below the first holding member, and has a second substrate mounted on the upper surface thereof and held thereon; a pushing member that is positioned on the first holding member and applies pressure to the center section of the first substrate by pushing thereon; and a guiding member that adheres to and holds the first substrate, fixes the location of the first substrate in the horizontal direction, and is capable of movement in the vertical direction.

Description

Joining apparatus, joining system, and joining method

The present invention relates to a bonding apparatus and a bonding system for bonding substrates together.

In recent years, higher integration of semiconductor devices has progressed. When a plurality of highly integrated semiconductor devices are arranged in a horizontal plane and these semiconductor devices are connected by wiring to produce a product, the wiring length increases, thereby increasing the wiring resistance and wiring delay. There is concern about becoming.

Therefore, it has been proposed to use a three-dimensional integration technique in which semiconductor devices are stacked three-dimensionally. In this three-dimensional integration technique, two semiconductor wafers (hereinafter referred to as “wafers”) are bonded using, for example, a bonding apparatus. For example, the bonding apparatus includes a chamber that accommodates two wafers arranged vertically (hereinafter, the upper wafer is referred to as an “upper wafer” and the lower wafer is referred to as a “lower wafer”), And a push pin that presses the center portion of the upper wafer, and a spacer that supports the outer periphery of the upper wafer and can be retracted from the outer periphery of the upper wafer. When such a bonding apparatus is used, the wafers are bonded to each other in a vacuum atmosphere in order to suppress the generation of voids between the wafers. Specifically, first, in a state where the upper wafer is supported by the spacer, the central portion of the upper wafer is pressed by the push pin, and the central portion is brought into contact with the lower wafer. Thereafter, the spacer supporting the upper wafer is retracted, and the entire surface of the upper wafer is brought into contact with the entire surface of the lower wafer and bonded together (Patent Document 1).

Japanese Unexamined Patent Publication No. 2004-207436

However, when the bonding apparatus described in Patent Document 1 is used, it is necessary to make the entire chamber in a vacuum atmosphere, so it takes a long time to form the vacuum atmosphere after the wafer is accommodated in the chamber. . As a result, the throughput of the entire wafer bonding process may be reduced.

In addition, when such a bonding apparatus is used, when the center portion of the upper wafer is pressed by the push pin, the upper wafer is only supported by the spacer, and therefore the position of the upper wafer may be shifted with respect to the lower wafer. It was.

The present invention has been made in view of such a point, and an object thereof is to appropriately and efficiently bond substrates together while suppressing the generation of voids between the substrates.

In order to achieve the above object, the present invention is a bonding apparatus for bonding substrates to each other, and is provided below the first holding member, a first holding member that sucks and holds the first substrate on the lower surface. A second holding member for placing and holding the second substrate on the upper surface, a pushing member provided on the first holding member and pressing the central portion of the first substrate, A guide member that holds the substrate by suction and fixes the horizontal position of the first substrate and is movable in the vertical direction.

According to the present invention, in a state where the first substrate is sucked and held by the guide member, the first substrate is lowered while pressing the central portion of the first substrate by the pushing member, and the first substrate The center portion and the center portion of the second substrate can be brought into contact with each other and pressed. Then, for example, even when there is air between the first substrate and the second substrate, when the first substrate is lowered, the horizontal position of the first substrate with respect to the second substrate is shifted by the guide member. There is nothing. Accordingly, the substrates can be appropriately bonded. Then, the first substrate and the second substrate are sequentially moved from the center portion of the first substrate toward the outer peripheral portion in a state where the center portion of the first substrate and the center portion of the second substrate are pressed. Can be joined. Then, for example, even when air that can be a void exists between the first substrate and the second substrate, the air is always on the outer peripheral side from the position where the second substrate is in contact with the first substrate. Therefore, the air can escape from the central portion to the outer peripheral portion between the substrates. Therefore, generation | occurrence | production of the void between board | substrates can be suppressed and board | substrates can be joined more appropriately. Moreover, according to the present invention, it is not necessary to use a vacuum atmosphere when bonding the substrates as in the prior art, so that the substrates can be bonded efficiently in a short time, and the throughput of the substrate bonding process is improved. Can be made.

Another aspect of the present invention is a bonding system including the bonding apparatus, wherein a processing station including the bonding apparatus, a first substrate, a second substrate, or a first substrate and a second substrate are provided. A plurality of bonded superposed substrates can be held, and a loading / unloading station for loading / unloading the first substrate, the second substrate or the superposed substrate with respect to the processing station is provided. The processing station includes a surface activation device that activates a surface to be bonded of the first substrate or the second substrate, and a surface of the first substrate or the second substrate activated by the surface activation device. A surface hydrophilizing device that hydrophilizes, a transport region for transporting the first substrate, the second substrate, or the polymerization substrate to the surface activating device, the surface hydrophilizing device, and the bonding device; have. In the bonding apparatus, the first substrate and the second substrate whose surfaces are hydrophilized by the surface hydrophilizing apparatus are bonded.

According to another aspect of the present invention, there is provided a bonding method for bonding substrates using a bonding apparatus, the bonding apparatus including a first holding member that holds the first substrate by suction on the lower surface, and the first holding member. A second holding member provided on the upper surface for holding and holding the second substrate, and a pressing member provided on the first holding member for pressing the central portion of the first substrate. A moving member; and a guide member that holds the first substrate by suction and fixes the position of the first substrate in the horizontal direction, and is movable in the vertical direction. The bonding method includes an arrangement step in which a first substrate held by the first holding member and a second substrate held by the second holding member are arranged to face each other at a predetermined interval; The suction holding of the first substrate by the first holding member is stopped, the first substrate is sucked and held by the guide member, and the first portion is pressed while pressing the central portion of the first substrate by the pushing member. A pressing step of lowering the substrate and bringing the central portion of the first substrate into contact with the central portion of the second substrate, and then pressing the central portion of the first substrate and the center of the second substrate A bonding step of sequentially bonding the first substrate and the second substrate from the central portion of the first substrate toward the outer peripheral portion in a state where the portion is pressed.

According to the present invention, it is possible to appropriately and efficiently bond the substrates while suppressing the generation of voids between the substrates.

It is a top view which shows the outline of a structure of the joining system concerning this Embodiment. It is a side view which shows the outline of the internal structure of the joining system concerning this Embodiment. It is a side view which shows the outline of a structure of an upper wafer and a lower wafer. It is a longitudinal cross-sectional view which shows the outline of a structure of a surface activation apparatus. It is a top view of a lower electrode. It is a longitudinal cross-sectional view which shows the outline of a structure of a surface hydrophilization apparatus. It is a cross-sectional view which shows the outline of a structure of a surface hydrophilization apparatus. It is a cross-sectional view which shows the outline of a structure of a joining apparatus. It is a longitudinal cross-sectional view which shows the outline of a structure of a joining apparatus. It is a side view which shows the outline of a structure of a position adjustment mechanism. It is a side view which shows the outline of a structure of the inversion mechanism. It is a longitudinal cross-sectional view which shows the outline of a structure of an upper chuck | zipper and a lower chuck | zipper. It is the top view which looked at the upper chuck from the lower part. It is the top view which looked at the lower chuck from the upper part. It is a flowchart which shows the main processes of a wafer joining process. It is explanatory drawing which shows a mode that the position of the horizontal direction of an upper wafer and a lower wafer is adjusted. It is explanatory drawing which shows a mode that the position of the vertical direction of an upper wafer and a lower wafer is adjusted. It is explanatory drawing which shows a mode that an upper wafer is lowered | hung. It is explanatory drawing which shows a mode that the center part of an upper wafer and the center part of a lower wafer are contacted, and are pressed. It is explanatory drawing which shows a mode that the upper wafer and the lower wafer were joined. It is a longitudinal cross-sectional view which shows the outline of a structure of the upper chuck | zipper and lower chuck | zipper concerning other embodiment. It is a longitudinal cross-sectional view which shows the outline of a structure of the upper chuck | zipper and lower chuck | zipper concerning other embodiment.

Hereinafter, embodiments of the present invention will be described. FIG. 1 is a plan view showing the outline of the configuration of the joining system 1 according to the present embodiment. FIG. 2 is a side view illustrating the outline of the internal configuration of the joining system 1.

In the interface system 1, bonding the wafer W _U, W _L as substrate, for example two as shown in FIG. Hereinafter, the wafer disposed on the upper side is referred to as “upper wafer W _U ” as the first substrate, and the wafer disposed on the lower side is referred to as “lower wafer W _L ” as the second substrate. Further, a bonding surface to which the upper wafer W _U is bonded is referred to as “front surface W _U1 ”, and a surface opposite to the front surface W _U1 is referred to as “back surface W _U2 ”. Similarly, the bonding surface to which the lower wafer W _L is bonded is referred to as “front surface W _L1 ”, and the surface opposite to the front surface W _L1 is referred to as “back surface _{WL 2} ”. Then, in the bonding system 1, by joining the upper wafer W _U and _the lower wafer W _L, to form the overlapped wafer W _T as a polymerization substrate.

As shown in FIG. 1, the bonding system 1 carries in and out cassettes C _U , C _L , and C _T that can accommodate a plurality of wafers W _U and W _L and a plurality of superposed wafers W _T , respectively, with the outside. The loading / unloading station 2 and the processing station 3 including various processing apparatuses that perform predetermined processing on the wafers W _U , W _L , and the overlapped wafer W _T are integrally connected.

The loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the horizontal X direction (vertical direction in FIG. 1). These cassette mounting plates 11, cassettes _C U to the outside of the interface system _1, C L, when loading and unloading the _{C T,} a cassette _{C U,} C L, it is possible to place the _{C T} . Thus, carry-out station 2, a wafer over multiple W _U, a plurality of lower wafer W _L, and is configured to be held by a plurality of overlapped wafer W _T. The number of cassette mounting plates 11 is not limited to the present embodiment, and can be arbitrarily determined. One of the cassettes may be used for collecting abnormal wafers. That is a cassette a wafer abnormality occurs in the bonding of the upper wafer W _U and _the lower wafer W _L, it can be separated from the other normal overlapped wafer W _T by various factors. In the present embodiment, among the plurality of cassettes C _T, using a one cassette C _T for the recovery of the abnormal wafer, and using other cassettes C _T for the accommodation of a normal overlapped wafer W _T.

In the loading / unloading station 2, a wafer transfer unit 20 is provided adjacent to the cassette mounting table 10. The wafer transfer unit 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the X direction. The wafer transfer device 22 is also movable in the vertical direction and around the vertical axis (θ direction), and includes cassettes C _U , C _L , C _T on each cassette mounting plate 11 and a third of the processing station 3 described later. The wafers W _U and W _L and the superposed wafer W _T can be transferred between the transition devices 50 and 51 in the processing block G3.

The processing station 3 is provided with a plurality of, for example, three processing blocks G1, G2, G3 provided with various devices. For example, a first processing block G1 is provided on the front side of the processing station 3 (X direction negative direction side in FIG. 1), and on the back side of the processing station 3 (X direction positive direction side in FIG. 1) Two processing blocks G2 are provided. Further, a third processing block G3 is provided on the loading / unloading station 2 side of the processing station 3 (Y direction negative direction side in FIG. 1).

For example, in the first processing block G1, a surface activation device 30 that activates the surfaces W _U1 and W _L1 of the wafers W _U and W _L is arranged.

For example, the second processing block G2 includes, for example, a surface hydrophilizing device 40 that hydrophilizes the surfaces W _U1 and W _L1 of the wafers W _U and W _L with pure water and cleans the surfaces W _U1 and W _{L1. U,} bonding device 41 for bonding the W _L are arranged side by side in the horizontal direction of the Y-direction in this order from the carry-out station 2 side.

For example, the third processing block G3, the wafer _W U as shown in FIG. 2, _{W L,} a transition unit 50, 51 of the overlapped wafer _{W T} are provided in two tiers from the bottom in order.

As shown in FIG. 1, a wafer transfer region 60 is formed in a region surrounded by the first processing block G1 to the third processing block G3. For example, a wafer transfer device 61 is disposed in the wafer transfer region 60.

The wafer transfer device 61 has, for example, a transfer arm that can move around the vertical direction, horizontal direction (Y direction, X direction), and vertical axis. The wafer transfer device 61 moves in the wafer transfer region 60, and adds wafers W _U , W _L , and W to predetermined devices in the surrounding first processing block G1, second processing block G2, and third processing block G3. You can transfer the overlapping wafer _{W T.}

Next, the configuration of the surface activation device 30 described above will be described. As shown in FIG. 4, the surface activation device 30 has a processing container 70 capable of sealing the inside. The side surface of the wafer transfer area 60 side of the processing container 70, the wafer W _U, the transfer port 71 of W _L is formed, the gate valve 72 is provided in the transfer port 71.

A lower electrode 80 for placing the wafers W _U and W _L is provided inside the processing container 70. The lower electrode 80 is made of a conductive material such as aluminum. Below the lower electrode 80, for example, a drive unit 81 including a motor or the like is provided. The lower electrode 80 can be moved up and down by the drive unit 81.

A heat medium circulation channel 82 is provided inside the lower electrode 80. A heat medium whose temperature is adjusted to an appropriate temperature by a temperature adjusting means (not shown) is introduced into the heat medium circulation passage 82 via a heat medium introduction pipe 83. The heat medium introduced from the heat medium introduction pipe 83 circulates in the heat medium circulation channel 82, whereby the lower electrode 80 is adjusted to a desired temperature. The heat of the lower electrode 80, the wafer W _U which is placed on the upper surface of the lower electrode _80, is transmitted to the W _L, the wafer W _U, W _L is adjusted to a desired temperature.

Note that the temperature adjustment mechanism for adjusting the temperature of the lower electrode 80 is not limited to the heat medium circulation passage 82, and other mechanisms such as a cooling jacket and a heater can also be used.

The upper part of the lower electrode 80 is configured as an electrostatic chuck 90 for electrostatically attracting the wafers W _U and W _L. The electrostatic chuck 90 has a structure in which a conductive film 93 such as a copper foil is disposed between two films 91 and 92 made of a polymer insulating material such as polyimide resin. The conductive film 93 is connected to a high-voltage power source 96 through a wiring 94 and a filter 95 such as a coil. At the time of the plasma processing, a high voltage set to an arbitrary DC voltage is cut from the high voltage power source 96 by the filter 95 and applied to the conductive film 93. Thus by the Coulomb force generated by the high voltage applied to the conductive film 93, wafer W _U to the upper surface (the upper surface of the electrostatic chuck 90) of the lower electrode _80, W _L is brought into electrostatic attraction.

The upper surface of the lower electrode 80, the wafer W _U, a plurality of heat transfer gas supply holes 100 for supplying a heat transfer gas toward the rear surface of the W _L is provided. As shown in FIG. 5, the plurality of heat transfer gas supply holes 100 are uniformly arranged in a plurality of concentric circles on the upper surface of the lower electrode 80.

As shown in FIG. 4, a heat transfer gas supply pipe 101 is connected to each heat transfer gas supply hole 100. The heat transfer gas supply pipe 101 communicates with a gas supply source (not shown), and a heat transfer gas such as helium is transferred from the gas supply source to the upper surface of the lower electrode 80 and the back surfaces W _U2 and W of the wafers W _U and W _L. It is supplied to a minute space formed between _L2 . Thereby, heat is efficiently transmitted from the upper surface of the lower electrode 80 to the wafers W _U and W _L.

Incidentally, the wafer W _U, if sufficient heat is efficiently transferred to W _L may be omitted heat transfer gas supply holes 100 and the heat transfer gas supply pipe 101.

Around the upper surface of the lower electrode 80, the wafer W _U which is placed on the upper surface of the lower electrode _80, so as to surround the outer periphery of W _L, an annular focus ring 102 is disposed. The focus ring 102 is made of an insulating or conductive material that does not attract reactive ions, and acts so that the reactive ions are effectively incident only on the inner wafers W _U and W _L.

An exhaust ring 103 having a plurality of baffle holes is disposed between the lower electrode 80 and the inner wall of the processing vessel 70. By the exhaust ring 103, the atmosphere in the processing container 70 is uniformly exhausted from the processing container 70.

A power feeding rod 104 made of a hollow conductor is connected to the lower surface of the lower electrode 80. A first high-frequency power source 106 is connected to the power feed rod 104 via a matching unit 105 made of, for example, a blocking capacitor. During the plasma processing, a high frequency voltage of 2 MHz, for example, is applied to the lower electrode 80 from the first high frequency power supply 106.

An upper electrode 110 is disposed above the lower electrode 80. The upper surface of the lower electrode 80 and the lower surface of the upper electrode 110 are arranged in parallel with each other with a predetermined distance therebetween. A distance between the upper surface of the lower electrode 80 and the lower surface of the upper electrode 110 is adjusted by the driving unit 81.

A second high frequency power source 112 is connected to the upper electrode 110 via a matching unit 111 made of, for example, a blocking capacitor. During the plasma processing, a high frequency voltage of 60 MHz, for example, is applied to the upper electrode 110 from the second high frequency power supply 112. As described above, the high frequency voltage is applied to the lower electrode 80 and the upper electrode 110 from the first high frequency power source 106 and the second high frequency power source 112, thereby generating plasma in the processing container 70.

A high voltage power supply 96 that applies a high voltage to the conductive film 93 of the electrostatic chuck 90, a first high frequency power supply 106 that applies a high frequency voltage to the lower electrode 80, and a second high frequency power supply that applies a high frequency voltage to the upper electrode 110. 112 is controlled by the control part 300 mentioned later.

A hollow portion 120 is formed inside the upper electrode 110. A gas supply pipe 121 is connected to the hollow portion 120. The gas supply pipe 121 communicates with a gas supply source 122 that stores processing gas therein. Further, the gas supply pipe 121 is provided with a supply device group 123 including a valve for controlling the flow of the processing gas, a flow rate adjusting unit and the like. Then, the flow rate of the processing gas supplied from the gas supply source 122 is controlled by the supply device group 123 and is introduced into the hollow portion 120 of the upper electrode 110 via the gas supply pipe 121. For example, oxygen gas, nitrogen gas, argon gas or the like is used as the processing gas.

In the hollow portion 120, a baffle plate 124 for promoting uniform diffusion of the processing gas is provided. The baffle plate 124 is provided with a large number of small holes. On the lower surface of the upper electrode 110, a large number of gas jets 125 for ejecting a processing gas from the hollow portion 120 into the processing container 70 are formed.

A suction port 130 is formed below the processing container 70. An intake pipe 132 that communicates with a vacuum pump 131 that reduces the atmosphere inside the processing container 70 to a predetermined degree of vacuum is connected to the intake port 130.

Note that below the lower electrode 80, the wafer W _U, the lift pins for supporting and elevating the the W _L from below (not shown) is provided. The elevating pin is inserted through a through hole (not shown) formed in the lower electrode 80 and can protrude from the upper surface of the lower electrode 80.

Next, the structure of the surface hydrophilization apparatus 40 mentioned above is demonstrated. As shown in FIG. 6, the surface hydrophilizing device 40 has a processing container 150 capable of sealing the inside. The side surface of the wafer transfer area 60 side of the processing chamber 150, the wafer _W U, the transfer port 151 of the _{W L} is formed as shown in FIG. 7, the opening and closing a shutter 152 is provided to the out port 151.

A spin chuck 160 that holds and rotates the wafers W _U and W _L is provided at the center of the processing container 150 as shown in FIG. The spin chuck 160 has a horizontal upper surface, and the upper surface is, for example, the wafer W _U, suction port for sucking the W _L (not shown) is provided. By suction from the suction port, the wafers W _U and W _L can be sucked and held on the spin chuck 160.

The spin chuck 160 has a chuck drive unit 161 provided with, for example, a motor, and can be rotated at a predetermined speed by the chuck drive unit 161. The chuck driving unit 161 is provided with an elevating drive source such as a cylinder, and the spin chuck 160 can be moved up and down.

Around the spin chuck 160, there is provided a cup 162 that receives and collects the liquid scattered or dropped from the wafers W _U and W _L. Connected to the lower surface of the cup 162 are a discharge pipe 163 for discharging the collected liquid and an exhaust pipe 164 for evacuating and exhausting the atmosphere in the cup 162.

As shown in FIG. 7, a rail 170 extending along the Y direction (left and right direction in FIG. 7) is formed on the negative side of the cup 162 in the X direction (downward direction in FIG. 7). For example, the rail 170 is formed from the outside of the cup 162 on the Y direction negative direction (left direction in FIG. 7) to the outside on the Y direction positive direction (right direction in FIG. 7). For example, a nozzle arm 171 and a scrub arm 172 are attached to the rail 170.

The nozzle arm 171, pure water nozzle 173 is supported for supplying pure water to the wafer _W U, _{W L} as shown in FIGS. The nozzle arm 171 is movable on the rail 170 by a nozzle driving unit 174 shown in FIG. As a result, the pure water nozzle 173 can move from the standby unit 175 installed on the outer side of the cup 162 on the positive side in the Y direction to the upper part of the center of the wafers W _U and W _L in the cup 162. _U, movable on _{W L} wafer _W U, in the radial direction of _{W L.} The nozzle arm 171 can be moved up and down by a nozzle driving unit 174, and the height of the pure water nozzle 173 can be adjusted.

As shown in FIG. 6, a supply pipe 176 that supplies pure water to the pure water nozzle 173 is connected to the pure water nozzle 173. The supply pipe 176 communicates with a pure water supply source 177 that stores pure water therein. The supply pipe 176 is provided with a supply device group 178 including a valve for controlling the flow of pure water, a flow rate adjusting unit, and the like.

A scrub cleaning tool 180 is supported on the scrub arm 172. At the tip of the scrub cleaner 180, for example, a plurality of thread-like or sponge-like brushes 180a are provided. The scrub arm 172 is movable on the rail 170 by a cleaning tool driving unit 181 shown in FIG. 7, and the scrub cleaning tool 180 is moved from the outside of the cup 162 in the negative Y direction side to the wafer W _U in the cup 162. it can be moved to above the central portion of the W _L. Further, the scrub arm 172 can be moved up and down by the cleaning tool driving unit 181, and the height of the scrub cleaning tool 180 can be adjusted.

In the above configuration, the pure water nozzle 173 and the scrub cleaning tool 180 are supported by separate arms, but may be supported by the same arm. Further, the pure water nozzle 173 may be omitted and pure water may be supplied from the scrub cleaning tool 180. Further, the cup 162 may be omitted, and a discharge pipe that discharges liquid to the bottom surface of the processing container 150 and an exhaust pipe that exhausts the atmosphere in the processing container 150 may be connected. Further, in the surface hydrophilizing device 40 having the above configuration, an antistatic ionizer (not shown) may be provided.

Next, the structure of the joining apparatus 41 mentioned above is demonstrated. As shown in FIG. 8, the bonding apparatus 41 includes a processing container 190 that can seal the inside. The side surface of the wafer transfer area 60 side of the processing vessel 190, the wafer _W U, _{W L,} the transfer port 191 of the overlapped wafer _{W T} is formed, close shutter 192 is provided to the out port 191.

The inside of the processing container 190 is divided into a transport region T1 and a processing region T2 by an inner wall 193. The loading / unloading port 191 described above is formed on the side surface of the processing container 190 in the transfer region T1. In addition, on the inner wall 193, a loading / unloading port 194 for the wafers W _U and W _L and the overlapped wafer W _T is formed.

A transition 200 for temporarily placing the wafers W _U and W _L and the superposed wafer W _T is provided on the positive side in the X direction of the transfer region T1. The transition 200 is formed in, for example, two stages, and any two of the wafers W _U , W _L , and the superposed wafer W _T can be placed at the same time.

In the transfer region T1, a wafer transfer body 202 that is movable on a transfer path 201 extending in the X direction is provided. As shown in FIGS. 8 and 9, the wafer transfer body 202 is also movable in the vertical direction and the vertical axis, and the wafers W _U , W in the transfer area T1 or between the transfer area T1 and the processing area T2 are used. _L, the polymerization wafer _{W T} can be conveyed. In the present embodiment, the transfer path 201 and the wafer transfer body 202 constitute a transfer mechanism.

A position adjustment mechanism 210 that adjusts the horizontal direction of the wafers W _U and W _L is provided on the X direction negative direction side of the transfer region T1. Position adjusting mechanism 210 includes a base 211, as shown in FIG. 10, the wafer _W U, _{W L} and a holding portion 212 for holding and rotating suction, detection for detecting a position of the notch portion of the wafer _W U, _{W L} Part 213. Then, the position adjusting mechanism 210, the wafer _W U sucked and held by the holding portion 212, the detection unit 213 while rotating the _{W L} by detecting the position of the notch portion of the wafer _W U, _{W L,} the notch Are adjusted to adjust the horizontal orientation of the wafers W _U and W _L.

Further, in the transfer region T1 is inverting mechanism 220 which moves between the transfer region T1 and the processing region T2, to and reverses the front and rear surfaces of the upper wafer W _U is provided. Inverting mechanism 220 has a holding arm 221 which holds the upper wafer _{W U} as shown in FIG. 11. On the holding arm 221, the suction pads 222 held horizontally by suction on the wafer W _U is provided. The holding arm 221 is supported by the first driving unit 223. By the first drive unit 223, the holding arm 221 can be rotated around the horizontal axis and can be expanded and contracted in the horizontal direction. A second driving unit 224 is provided below the first driving unit 223. By this second drive unit 224, the first drive unit 223 can rotate about the vertical axis and can be moved up and down in the vertical direction. Further, the second drive unit 224 is attached to a rail 225 extending in the Y direction shown in FIGS. The rail 225 extends from the processing area T2 to the transport area T1. The second driving unit 224 allows the reversing mechanism 220 to move between the position adjusting mechanism 210 and an upper chuck 230 described later along the rail 225. The inverting mechanism 220 also functions as a transport mechanism for transporting the wafer _W U, _{W L,} the overlapped wafer _{W T.} The configuration of the inverting mechanism 220 is not limited to the configuration of the above embodiment, it is sufficient to invert the front and rear surfaces of the upper wafer W _U. Further, the reversing mechanism 220 may be provided in the processing region T2. Further, a reversing mechanism may be added to the wafer transport body 202, and another transport means may be provided at the position of the reversing mechanism 220. Further, a reversing mechanism may be added to the position adjusting mechanism 210, and another conveying unit may be provided at the position of the reversing mechanism 220.

The processing region T2, the upper chuck 230 as a first holding member for sucking and holding the upper wafer W _U at the lower surface as shown in FIGS. 8 and 9, the suction holding and mounting the lower wafer W _L with the upper surface And a lower chuck 231 as a second holding member. The lower chuck 231 is provided below the upper chuck 230 and is configured to be disposed so as to face the upper chuck 230. That is, the lower wafer W _L held by the wafer W _U and the lower chuck 231 on which is held in the upper chuck 230 is adapted to be placed opposite.

As shown in FIG. 9, the upper chuck 230 is supported by a support member 232 provided on the ceiling surface of the processing container 190. The support member 232 supports the outer peripheral portion of the upper surface of the upper chuck 230. A chuck driving unit 234 is provided below the lower chuck 231 via a shaft 233. By the chuck driving unit 234, the lower chuck 231 can be moved up and down in the vertical direction and can be moved in the horizontal direction. Further, the lower chuck 231 is rotatable about the vertical axis by the chuck driving unit 234. Below the lower chuck 231, the lift pins for lifting and supporting the lower wafer W _L from below (not shown) is provided. The elevating pins are inserted through through holes (not shown) formed in the lower chuck 231 and can protrude from the upper surface of the lower chuck 231. In the present embodiment, the shaft 233 and the chuck driving unit 234 constitute a moving mechanism.

As shown in FIG. 12, the upper chuck 230 is divided into a plurality of, for example, three regions 230a, 230b, and 230c. These regions 230a, 230b, and 230c are provided in this order from the center of the upper chuck 230 toward the outer periphery as shown in FIG. The region 230a has a circular shape in plan view, and the regions 230b and 230c have an annular shape in plan view. Each region 230a, 230b, the 230c, the suction pipe 240a for sucking and holding the upper wafer _{W U} as shown in FIG. 12, 240b, 240c are provided independently. Different vacuum pumps 241a, 241b, 241c are connected to the suction tubes 240a, 240b, 240c, respectively. Thus, the upper chuck 230, each region 230a, 230b, and is capable of setting the vacuum of the upper wafer _{W U} per 230c.

A through hole 242 that penetrates the upper chuck 230 in the thickness direction is formed at the center of the upper chuck 230. Central portion of the upper chuck 230 corresponds to the central portion of the upper wafer W _U which is attracted and held on the upper chuck 230. A push pin 251 of a push member 250 described later is inserted into the through hole 242.

On the upper surface of the upper chuck 230, pressing member 250 for pressing the central portion of the upper wafer W _U it is provided. The pushing member 250 has a cylinder structure, and includes a pushing pin 251 and an outer cylinder 252 that serves as a guide when the pushing pin 251 moves up and down. The push pin 251 is movable up and down in the vertical direction through the through hole 242 by, for example, a drive unit (not shown) incorporating a motor. The pressing member 250, the wafer W _U to be described _later, at the time of bonding of W _L, can be pressed by contacting the center portion of the center and lower wafer W _L of the upper wafer W _U.

The distal end portion of the upper wafer W _U side in pressing pin 251 of the pressing member 250, guide member 253 for attracting and holding the on the wafer W _U is provided. A vacuum pump 255 is connected to the guide member 253 via a push pin 251 and a suction pipe 254 connected to the base end of the push pin 251. For this reason, the push pin 251 has a hollow structure so that air flows therethrough. The guide member 253 can be held by suction on the wafer W _U fixes the horizontal position of the on the wafer W _U. Further, as the push pin 251 moves up and down in the vertical direction, the guide member 253 is also movable in the vertical direction.

The upper chuck 230, the upper imaging member 256 as a second imaging member for imaging the surface W _L1 of the lower wafer W _L is provided. For the upper imaging member 256, for example, a wide-angle CCD camera is used. Note that the upper imaging member 256 may be provided on the upper chuck 230.

As shown in FIG. 14, the lower chuck 231 is divided into a plurality of, for example, two regions 231a and 231b. These regions 231a and 231b are provided in this order from the center of the lower chuck 231 toward the outer periphery. The region 231a has a circular shape in plan view, and the region 231b has an annular shape in plan view. Each region 231a, the 231b, the suction pipe 260a for sucking and holding the upper wafer _{W U} as shown in FIG. 12, 260b are provided independently. Different vacuum pumps 261a and 261b are connected to the suction pipes 260a and 260b, respectively. Therefore, the lower chuck 231, each region 231a, and is capable of setting the vacuum of the lower wafer _{W L} per 231b.

The outer peripheral portion of the lower chuck 231, the wafer _W U, _{W L,} or jump out from the overlapped wafer _{W T} is the lower chuck 231, the stopper member 262 to prevent the sliding is provided. The stopper member 262, the top portion extends in the vertical direction so as to be positioned above the overlapped wafer W _T on at least a lower chuck 231. Further, as shown in FIG. 14, the stopper member 262 is provided at a plurality of places, for example, five places on the outer peripheral portion of the lower chuck 231.

The lower chuck 231 is provided with a lower imaging member 263 as a first imaging member that images the surface W _U1 of the upper wafer W _U as shown in FIG. For the lower imaging member 263, for example, a wide-angle CCD camera is used. The lower imaging member 263 may be provided on the lower chuck 231.

The above joining system 1 is provided with a control unit 300 as shown in FIG. The control unit 300 is a computer, for example, and has a program storage unit (not shown). The program storage unit stores a program for controlling processing of the wafers W _U and W _L and the overlapped wafer W _{T in} the bonding system 1. The program storage unit also stores a program for controlling operations of driving systems such as the above-described various processing apparatuses and transfer apparatuses to realize later-described wafer bonding processing in the bonding system 1. The program is recorded on a computer-readable storage medium H such as a computer-readable hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical desk (MO), or a memory card. May have been installed in the control unit 300 from the storage medium H.

Next, a method for bonding the wafers W _U and W _L performed using the bonding system 1 configured as described above will be described. FIG. 15 is a flowchart showing an example of main steps of the wafer bonding process.

First, the cassette C _U, the cassette C _L accommodating the lower wafer W _L of the _plurality, and the empty cassette C _T is a predetermined cassette mounting plate 11 of the carry-out station 2 accommodating the wafers W _U on the plurality Placed on. Thereafter, _the upper wafer W _U in the cassette C _U is taken out by the wafer transfer device 22 is conveyed to the transition unit 50 of the third processing block G3 in the processing station 3.

Then the upper wafer W _U is transported to the first processing block surface activation device G1 30 by the wafer transfer apparatus 61. Upper wafer W _U which is carried on the surface activation device 30 is mounted is passed from the wafer transfer unit 61 on the upper surface of the lower electrode 80. Thereafter, the wafer transfer device 61 leaves the surface activation device 30 and the gate valve 72 is closed.

Thereafter, the vacuum pump 131 is operated, and the atmosphere inside the processing container 70 is reduced to a predetermined degree of vacuum, for example, 67 Pa to 333 Pa (0.5 Torr to 2.5 Torr) via the air inlet 130. Then, processing on the wafer W _U as described below, the atmosphere in the processing chamber 70 is maintained at the predetermined degree of vacuum.

Further, a high voltage set to, for example, a DC voltage of 2500 V is applied from the high voltage power source 96 to the conductive film 93 of the electrostatic chuck 90. By the Coulomb force generated by thus high voltage applied to the electrostatic chuck 90, the upper wafer W _U is is electrostatically adsorbed on the upper surface of the lower electrode 80. Further, the upper wafer W _U electrostatically attracted to the lower electrode 80 is maintained at a predetermined temperature, for example, 25 ° C. to 30 ° C. by the heat medium in the heat medium circulation channel 82.

Thereafter, the processing gas supplied from the gas supply source 122 is uniformly supplied into the processing vessel 70 from the gas outlet 125 on the lower surface of the upper electrode 110. Then, a high frequency voltage of 2 MHz, for example, is applied from the first high frequency power supply 106 to the lower electrode 80, and a high frequency voltage of 60 MHz, for example, is applied from the second high frequency power supply 112 to the upper electrode 110. As a result, an electric field is formed between the upper electrode 110 and the lower electrode 80, and the processing gas supplied into the processing container 70 is turned into plasma by the electric field.

The plasma of the processing gas (hereinafter sometimes referred to as “processing plasma”) activates the surface W _U1 of the upper wafer W _U on the lower electrode 80 and removes organic substances on the surface W _U1. Is done. At this time, the oxygen gas plasma in the processing plasma mainly contributes to the removal of organic substances on the surface W _U1 . Further, the oxygen gas plasma can promote the oxidation of the surface W _U1 of the upper wafer W _U , that is, the hydrophilization. Further, the argon gas plasma in the processing plasma has a certain amount of high energy, and organic substances on the surface W _U1 are positively (physically) removed by the argon gas plasma. Further, the argon gas plasma has an effect of removing residual moisture contained in the atmosphere in the processing vessel 70. In this way, the surface W _U1 of the upper wafer W _U is activated by the processing plasma (step S1 in FIG. 15).

Then the upper wafer W _U is transferred to a surface hydrophilizing apparatus 40 of the second processing block G2 by the wafer transfer apparatus 61. Surface hydrophilizing device wafer after being carried into the 40 W _U is the passed suction holding the wafer transfer apparatus 61 to the spin chuck 160.

Subsequently, the pure water nozzle 173 of the standby unit 175 is moved to above the center of the upper wafer W _U by the nozzle arm 171, and the scrub cleaning tool 180 is moved onto the upper wafer W _U by the scrub arm 172. Thereafter, while rotating the upper wafer _{W U} by the spin chuck 160, for supplying pure water onto the upper wafer _{W U} from the pure water nozzle 173. Then, hydroxyl groups adhere to the surface W _U1 of the upper wafer W _U , and the surface W _U1 is hydrophilized. Further, the surface W _U1 of the upper wafer W _U is cleaned by pure water from the pure water nozzle 173 and the scrub cleaning tool 180 (step S2 in FIG. 15).

Then the upper wafer W _U is transferred to the bonding apparatus 41 of the second processing block G2 by the wafer transfer apparatus 61. Upper wafer _{W U} which is carried into the joining device 41 is conveyed to the position adjusting mechanism 210 by the wafer transfer body 202 via the transition 200. Then the position adjusting mechanism 210, the horizontal orientation of the upper wafer _{W U} is adjusted (step S3 in FIG. 15).

Thereafter, the upper wafer _{W U} is transferred from the position adjusting mechanism 210 to the holding arm 221 of the inverting mechanism 220. Subsequently, in transfer region T1, by reversing the holding arm 221, the front and back surfaces of the upper wafer W _U is inverted (step S4 in FIG. 15). That is, the surface W _U1 of the upper wafer W _U is directed downward. Incidentally, reversal of the front and rear surfaces of the upper wafer W _U may be performed during movement of the reversing mechanism 220 to be described later.

Thereafter, the reversing mechanism 220 is moved to the upper chuck 230 side, the upper wafer _{W U} is transferred from the inverting mechanism 220 in the upper chuck 230. Upper wafer _{W U,} the back surface _{W U2} is held by suction to the upper chuck 230 (step S5 in FIG. 15). At this time, all of the vacuum pumps 241a, 241b, operates the 241c, all the regions 230a of the upper chuck 230, 230b, in 230c, are evacuated upper wafer _{W U.} Upper wafer W _U, the process waits at the upper chuck 230 to the lower wafer W _L is transported to the bonding apparatus 41 described later. Incidentally, when sucking and holding the upper wafer W _U in the upper chuck 230, may perform evacuation of the upper wafer W _U by the guide member 253 may have to stop the evacuation. In the present embodiment, evacuation by the guide member 253 is stopped.

During the processing of steps S1 ~ S5 mentioned above in the upper wafer W _U is being performed, the processing of the lower wafer W _L Following the on wafer W _U is performed. First, the lower wafer W _L in the cassette C _L is taken out by the wafer transfer device 22 is conveyed to the transition unit 50 in the processing station 3.

Lower wafer _{W L} then is conveyed to a surface activation device 30 by the wafer transfer apparatus 61, the surface _{W L1} of the lower wafer _{W L} is activated (step S6 in FIG. 15). Note that activation of the surface _{W L1} of the lower wafer _{W L} in step S6 is the same as step S1 of the aforementioned.

Thereafter, the lower wafer _{W L} is transferred to the surface hydrophilizing apparatus 40 by the wafer transfer apparatus 61, the surface _{W L1} of the lower wafer _{W L} is the surface _{W L1} together is hydrophilized is cleaned (Fig. 15 step S7 ). Incidentally, hydrophilic and cleaning of the surface W _L1 of the lower wafer W _L in step S7, to omit the detailed description is the same as step S2 of the above-described.

Thereafter, the lower wafer _{W L} is transported to the bonding apparatus 41 by the wafer transfer apparatus 61. Lower wafer _{W L} which is transported to the bonding unit 41 is conveyed to the position adjusting mechanism 210 by the wafer transfer body 202 via the transition 200. Then the position adjusting mechanism 210, the horizontal orientation of the lower wafer _{W L} are adjusted (step S8 in FIG. 15).

Thereafter, the lower wafer _{W L} is transferred to the lower chuck 231 by the wafer transfer body 202, it is attracted and held by the lower chuck 231 (step S9 in FIG. 15). At this time, all of the vacuum pumps 261a, actuates the 261b, all the regions 231a of the lower chuck 231, in 231b, are evacuated lower wafer _{W L.} The surface _{W L1} of the lower wafer _{W L} is to face upwards, the back surface _{W L2} of the lower wafer _{W L} is sucked and held by the lower chuck 231.

Next, the adjusted horizontal position of the wafer W _U and the lower wafer held by the lower chuck 231 W _L after being held in the upper chuck 230. As shown in FIG. 16, a plurality of predetermined reference points A, for example, four or more reference points A are formed on the surface W _L1 of the lower wafer W _L , and similarly, predetermined on the surface W _U1 of the upper wafer W _U. A plurality of, for example, four or more reference points B are formed. As these reference points A and B, for example, predetermined patterns formed on the wafers W _L and W _U are used, respectively. Then, by moving the upper imaging member 256 in the horizontal direction, the surface _{W L1} of the lower wafer _{W L} is imaged. Further, the lower imaging member 263 is moved in the horizontal direction, and the surface W _U1 of the upper wafer W _U is imaged. Thereafter, the position of the reference point A of the lower wafer W _L the upper imaging member 256 are displayed on the image captured, and the position of the reference point B of the wafer W _U on the lower imaging member 263 is displayed in the image captured Consistently, the horizontal position of the lower wafer W _L by the lower chuck 231 (including the horizontal direction) is adjusted. That is, the chuck drive unit 234 to move the lower chuck 231 in the horizontal direction is adjusted horizontal position of the lower wafer W _L. Horizontal position of the upper wafer _{W U} and the lower wafer _{W L} is adjusted in this way (step S10 in FIG. 15).

The horizontal direction of the wafers W _U and W _L is adjusted by the position adjusting mechanism 210 in steps S3 and S8, but fine adjustment is performed in step S10. In the step S10 of the present embodiment, the predetermined patterns formed on the wafers W _L and W _U are used as the reference points A and B. However, other reference points can be used. For example, the outer peripheral portion and the notch portion of the wafers W _L and W _U can be used as the reference points.

Thereafter, the chuck drive unit 234 raises the lower chuck 231 as shown in FIG. 17, to place the lower wafer W _L to a predetermined position. In this case, as the distance D between the surface _{W U1} of the surface _{W L1} and the upper wafer _{W U} of the lower wafer _{W L} is a predetermined distance, for example 50 [mu] m, to place the lower wafer _{W L.} Vertical position of the upper wafer _{W U} and the lower wafer _{W L} is adjusted in this way (step S11 in FIG. 15). In the step S5 ~ step S11, all areas 230a of the upper chuck 230, 230b, in 230c, are evacuated upper wafer _{W U.} Similarly, in step S9 ~ step S11, all areas 231a of the lower chuck 231, in 231b, are evacuated lower wafer _{W L.}

Thereafter, the suction pipe 240a in the upper chuck 230 as shown in FIG. 18, 240b, to stop the evacuation of _the upper wafer _{W U} from 240c, it initiates evacuation of the upper wafer _{W U} by the guide member 253. That is, by stopping the suction holding of the upper wafer _{W U} by the upper chuck 230, for attracting and holding the upper wafer _{W U} by the guide member 253. Then, by pressing the pin 251 of the pressing member 250, while pressing the center portion of the upper wafer W _U lowering the on wafer W _U. In this case, the pressing pin 251, load as the pressing pin 251 in the absence of the upper wafer _{W U} is 70μm moves, for example, 200g is applied. Further, upon lowering of the pressing pin 251, it is never shifted horizontal position of the upper wafer W _U with respect to the lower wafer W _L by the guide member 253. Then, the pressing member 250 as shown in FIG. 19, it is brought into contact with the central portion of the central portion and the lower wafer _{W L} of the upper wafer _{W U} is pressed (step S12 in FIG. 15). At this time, the surface _{W L1} of the surface _{W U1} and the lower wafer _{W L} of the upper wafer _{W U} is in contact with the entire surface.

Thereafter, the bonding is started between the central portion of the central portion and the lower wafer W _L of _the upper wafer W _U which pressed (thick line portion in FIG. 19). That is, since the surface W _U1 of the upper wafer W _U and the surface W _L1 of the lower wafer W _L are activated in steps S1 and S6, respectively, first, Van der Waals force is generated between the surfaces W _U1 and W _L1 . The surfaces W _U1 and W _L1 are joined to each other. Thereafter, since the surface W _U1 of the upper wafer W _U and the surface W _L1 of the lower wafer W _L have been hydrophilized in steps S2 and S7, respectively, the hydrophilic groups between the surfaces W _U1 and W _L1 are hydrogen-bonded. _U1 and _WL1 are firmly joined to each other. In a state where the center of the central portion and the lower wafer W _L of the upper wafer W _U is pressed toward the peripheral portion from the central portion of the upper wafer W _U, coupled sequentially spreads described above. Thus, _the upper wafer _{W U} and _the lower wafer _{W L} is bonded as shown in FIG. 20 (step S13 in FIG. 15). Then, stop the vacuuming of the upper wafer _{W U} by the guide member 253 to raise the pressing member 250 to the upper chuck 230. The suction pipe 260a in the lower chuck 231, to stop the evacuation of the lower wafer _{W L} from 260b, stopping the suction and holding of the lower wafer _{W L} by the lower chuck 231.

The upper wafer W _U and _the lower wafer W _L overlapped wafer bonded W _T is transferred to the transition unit 51 by the wafer transfer apparatus 61, then carry out by the wafer transfer apparatus 22 of the station 2 of a predetermined cassette mounting plate 11 It is conveyed to the cassette _{C T.} Thus, a series of wafers _W U, bonding process of _{W L} is completed.

According to the above embodiment, lowering in the step S12, while sucking and holding the upper wafer W _U by the guide member 253, the upper wafer W _U while pressing the center portion of the upper wafer W _U by pressing member 250 are allowed, it is possible to press by contacting the central portion of the central portion and the lower wafer W _L of the on the wafer W _U. Then, for example, even when there is air between the upper wafer W _U and the lower wafer W _L , when the upper wafer W _U is lowered, the horizontal position of the upper wafer W _U with respect to the lower wafer W _L is lowered by the guide member 253. There is no deviation. Therefore, the wafers W _U and W _L can be appropriately bonded.

In the step S13, in a state where the center portion of the center and lower wafer W _L of the upper wafer W _U is pressed toward the peripheral portion from the central portion of the upper wafer W _{U, the} upper wafer W _U and _the lower wafer W _L can be joined sequentially. Then, for example, even if the air is present which can be a void between the upper wafer W _U and _the lower wafer W _L, always the outer peripheral portion side of the point the air that is in contact with the upper wafer W _U and the lower wafer W _L Therefore, the air can be released from the central portion to the outer peripheral portion between the wafers W _U and W _L. Thus, the wafer _W U, can suppress the generation of voids between _{W L,} it is possible to more suitably joined wafers _W U, the _{W L} together.

In addition, according to the present embodiment, it is not necessary to use a vacuum atmosphere for bonding the wafers W _U and W _L as in the prior art, so that the bonding of the wafers W _U and W _L can be performed efficiently in a short time. And the throughput of the wafer bonding process can be improved.

In the step S12, while sucking and holding the upper wafer W _U by the guide member 253, since lowering the upper wafer W _U while pressing the center portion of the upper wafer W _U by pressing member 250, the upper wafer W _U is brought into contact with the central portion and the central portion of the lower wafer W _L of the time of pressing, it is not possible to the upper wafer W _U bends. Therefore, the present embodiment is useful when it is not possible to deflect the upper wafer W _U.

Further, the stopper member 262 to the outer peripheral portion of the lower chuck 231 is provided, it is possible to prevent the wafer _W U, _{W L,} or popping overlapped wafer _{W T} is the lower chuck 231, from sliding down.

In addition to the upper chuck 230 and the lower chuck 231 for bonding the wafers W _U and W _L , the bonding apparatus 41 includes a position adjusting mechanism 210 that adjusts the horizontal direction of the wafers W _U and W _L , since also has a reversing mechanism 220 for reversing the front and back surfaces of the wafer W _U, it can be performed efficiently bonding the wafer W _U, W _L in one device. Further, in addition to the bonding apparatus 41, the bonding system 1 hydrophilizes the surface W _U1 and W _L1 and the surface activation apparatus 30 that activates the surfaces W _U1 and W _L1 of the wafers W _U and W _L and the surfaces W _U1 and W _L1. Since the surface hydrophilizing device 40 for cleaning the surfaces W _U1 and W _L1 is also provided, the wafers W _U and W _L can be efficiently bonded in one system. Accordingly, the throughput of the wafer bonding process can be further improved.

In the above embodiment, the guide member 253 is provided on the distal end of the pressing pin 251 of the pressing member 250, in addition to the guide member 253 as shown in FIG. 21, to the upper wafer W _U A plurality of other guide members 400 may be provided. The guide member 400 has the same configuration and function as the guide member 253. The guide member 400 is connected to the vacuum pump 255 described above via a suction pipe (not shown). The guide member 400 can be sucked and held on the wafer _{W U.} The guide member 400 is supported by a support member 401 provided on the lower surface of the upper chuck 230, for example. The support member 401 is configured to be stretchable in the vertical direction, and the guide member 400 is also movable in the vertical direction by the support member 401.

In this case, it is possible to suction-held on the wafer _{W U} by a plurality of guide members 400 in addition to the guide member 253, the pressing pin 251 of the pressing member 250 in the second process S12 described above, pressing the central portion of the upper wafer _{W U} the on wafer W _U when lowering, it is possible to prevent the horizontal position of the upper wafer W _U is displaced more reliably with respect to the lower wafer W _L while. Therefore, the wafers W _U and W _L can be more appropriately bonded.

In the above embodiment, the upper chuck 230 is provided with the guide member 400 in addition to the guide member 253. However, as shown in FIG. 22, the guide member 253 is omitted and a plurality of guide members 400 are provided. Also good. Even such a case, it is possible to reliably prevent the horizontal position of the upper wafer W _U as described above is shifted.

Furthermore, keep the above embodiments, for example, the shape in the plan view of the guide member 253,400 by the rectangular shape, may prevent the horizontal position of the upper wafer W _U is shifted.

In the above embodiment, the lower chuck 231 can be moved up and down in the vertical direction and movable in the horizontal direction by the chuck driving unit 234, but the upper chuck 230 can be moved up and down in the vertical direction or moved in the horizontal direction. You may comprise. Further, both the upper chuck 230 and the lower chuck 231 may be configured to be vertically movable and movable in the horizontal direction.

In order to strengthen the bonding of the wafers W _U and W _L in the bonding apparatus 41, the surfaces W _U1 and W _L1 may be more activated. From this point of view, oxygen gas or argon gas may be used as the processing gas to be converted into plasma in the surface activation device 30, but it is more preferable to use nitrogen gas. This is because the use of nitrogen gas produces more hydroxyl groups (—OH) than the use of oxygen gas or argon gas. Then, this hydroxyl group, the wafer _W U, _{W L} is joined more firmly. Thus, by using nitrogen gas as the processing gas, the bonding time of the wafers W _U and W _L in the bonding apparatus 41 is further shortened, and bonding is started as soon as the wafers W _U and W _L come into contact with each other. since, it is possible to further reduce the positional deviation of the wafer _W U, _{W L.}

In addition, you may implement combining a part of embodiment mentioned above, and it is possible to acquire the same effect | action and effect.

The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to such examples. It is obvious for those skilled in the art that various changes or modifications can be conceived within the scope of the idea described in the claims, and these naturally belong to the technical scope of the present invention. It is understood. The present invention is not limited to this example and can take various forms. The present invention can also be applied to a case where the substrate is another substrate such as an FPD (flat panel display) other than a wafer or a mask reticle for a photomask.

DESCRIPTION OF SYMBOLS 1 Bonding system 2 Loading / unloading station 3 Processing station 30 Surface activation apparatus 40 Surface hydrophilization apparatus 41 Bonding apparatus 60 Wafer conveyance area 201 Conveyance path 202 Wafer conveyance body 210 Position adjustment mechanism 220 Inversion mechanism 230 Upper chuck 231 Lower chuck 233 Shaft 234 Chuck driving unit 250 Pushing member 253 Guide member 256 Upper imaging member 262 Stopper member 263 Lower imaging member 300 Control unit 400 Guide member W _U upper wafer W _U1 surface W _L lower wafer W _L1 surface W _T superposition wafer

Claims (12)

A joining device for joining substrates,
A first holding member that sucks and holds the first substrate on the lower surface;
A second holding member provided below the first holding member and placing and holding the second substrate on the upper surface;
A pressing member provided on the first holding member and pressing a central portion of the first substrate;
And a guide member which holds the first substrate by suction and fixes the position of the first substrate in the horizontal direction and is movable in the vertical direction. The joining apparatus according to claim 1,
The guide member is provided at a distal end portion of the push member on the first substrate side. The joining apparatus according to claim 1,
A plurality of the guide members are provided for the first substrate. The joining apparatus according to claim 1,
A stopper member for the first substrate, the second substrate, or the superposed substrate in which the first substrate and the second substrate are bonded is provided on the outer peripheral portion of the second holding member. The joining apparatus according to claim 1,
A moving mechanism for moving the first holding member or the second holding member in a relatively horizontal direction;
A first imaging member that images the surface of the first substrate;
A second imaging member that images the surface of the second substrate,
The moving mechanism matches a reference point of the first substrate in the image captured by the first imaging member with a reference point of the second substrate in the image captured by the second imaging member. In this manner, the relative horizontal position of the first holding member and the second holding member is adjusted. The joining apparatus according to claim 1,
A position adjusting mechanism for adjusting the horizontal direction of the first substrate or the second substrate;
A reversing mechanism for reversing the front and back surfaces of the first substrate;
And a transport mechanism that transports the first substrate, the second substrate, or the superposed substrate in which the first substrate and the second substrate are bonded in the bonding apparatus. A bonding system including a bonding device for bonding substrates,
A processing station comprising the joining device;
Each of the first substrate, the second substrate, or a plurality of superposed substrates bonded with the first substrate and the second substrate can be held, and the first substrate, the second substrate, or the superposed over the processing station. A loading / unloading station for loading and unloading substrates,
The joining device includes:
A first holding member that sucks and holds the first substrate on the lower surface;
A second holding member provided below the first holding member and placing and holding the second substrate on the upper surface;
A pressing member provided on the first holding member and pressing a central portion of the first substrate;
A guide member that sucks and holds the first substrate to fix the position of the first substrate in the horizontal direction and is movable in the vertical direction;
The processing station is
A surface activation device for activating the surface to be bonded of the first substrate or the second substrate;
A surface hydrophilizing device that hydrophilizes the surface of the first substrate or the second substrate activated by the surface activating device;
A transport region for transporting the first substrate, the second substrate, or the polymerization substrate to the surface activation device, the surface hydrophilization device, and the bonding device;
The joining device joins the first substrate and the second substrate whose surfaces have been hydrophilized by the surface hydrophilizing device. The joining system according to claim 7.
The surface activation device activates a surface to which the first substrate or the second substrate is bonded by converting nitrogen gas into plasma. A bonding method for bonding substrates using a bonding apparatus,
The joining device includes:
A first holding member that sucks and holds the first substrate on the lower surface;
A second holding member provided below the first holding member and placing and holding the second substrate on the upper surface;
A pressing member provided on the first holding member and pressing a central portion of the first substrate;
A guide member that sucks and holds the first substrate to fix the position of the first substrate in the horizontal direction and is movable in the vertical direction;
The joining method is:
An arrangement step of disposing the first substrate held by the first holding member and the second substrate held by the second holding member to face each other at a predetermined interval;
Thereafter, the suction holding of the first substrate by the first holding member is stopped, the first substrate is sucked and held by the guide member, and the central portion of the first substrate is pressed by the pushing member. A pressing step of lowering the first substrate and bringing the central portion of the first substrate into contact with the central portion of the second substrate;
Thereafter, the first substrate and the second substrate are sequentially joined from the center portion of the first substrate toward the outer peripheral portion in a state where the center portion of the first substrate and the center portion of the second substrate are pressed. And a joining step. The joining method according to claim 9,
The guide member is provided at a distal end portion of the push member on the first substrate side. The joining method according to claim 9,
A plurality of the guide members are provided for the first substrate. The joining method according to claim 9,
Before the placing step, the surface of the first substrate and the surface of the second substrate are imaged, respectively, and the reference point of the first substrate in the captured image and the reference point of the second substrate in the captured image The relative horizontal positions of the first substrate and the second substrate are adjusted so as to match.

Images