WO2012160845A1 - Mems sensor - Google Patents
Mems sensor Download PDFInfo
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- WO2012160845A1 WO2012160845A1 PCT/JP2012/053473 JP2012053473W WO2012160845A1 WO 2012160845 A1 WO2012160845 A1 WO 2012160845A1 JP 2012053473 W JP2012053473 W JP 2012053473W WO 2012160845 A1 WO2012160845 A1 WO 2012160845A1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/03—Microengines and actuators
- B81B2201/033—Comb drives
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
Definitions
- the present invention relates to a capacitive MEMS sensor formed by processing a silicon (Silicon) layer or the like, and more particularly to an electrode structure.
- the capacitive MEMS sensor is configured to have a weight portion, a movable electrode portion, and a fixed electrode portion. For example, when acceleration acts on the MEMS sensor, the weight portion and the movable electrode portion move, and a capacitance change occurs between the movable electrode portion and the fixed electrode portion. It is possible to detect acceleration based on the change in capacitance.
- FIG. 17 is an explanatory view (plan view) schematically showing a movable electrode portion and a fixed electrode portion of a conventional MEMS sensor.
- the MEMS sensor detects an acceleration in the in-plane direction, and can detect an acceleration acting in, for example, the X1-X2 direction.
- FIG. 17 (a) shows the stationary state of the MEMS sensor.
- the MEMS sensor includes a first detection unit 1 and a second detection unit 2, and the first detection unit 1 and the second detection unit 2 each have a plurality of comb teeth.
- the fixed electrodes 1a and 2a and the plurality of comb-teeth-shaped movable electrodes 1b and 2b are alternately arranged at intervals in the X1-X2 direction.
- a first gap a having a predetermined distance between the movable electrode 1b and the fixed electrode 1a positioned on the X1 side with respect to the movable electrode 1b. 0 is provided in the first detection unit 1. Also the second detector 2, the second gap b 0 of a predetermined distance between the fixed electrode 2a positioned on the X2 side and the movable electrode 2b with respect to the movable electrode 2b is provided.
- FIG. 17B when the movable electrode 1b in the first detection unit 1 and the movable electrode 2b in the second detection unit 2 respectively move in the X1 direction by the action of acceleration, FIG. first gap a 1 in is smaller than the gap a 0 in the stationary state shown in FIG. 17 (a), while the second gap b 1 than the gap b 0 in the stationary state shown in FIG. 17 (a) Will also grow.
- the accelerations acting in the X1-X2 direction change the gaps a and b between the movable electrodes 1b and 2b and the fixed electrodes 1a and 2a. This changes the capacitance.
- the change in electrostatic capacitance in the first detection unit 1 and the change in electrostatic capacitance in the second detection unit 2 are reversed.
- Patent Document 1 describes an electrode structure that causes a capacitance change by a change in the gap between the movable electrode and the fixed electrode, as in FIG. 17 described above.
- Patent Document 1 also describes an electrode structure capable of detecting a capacitance change due to a change in the facing area between a movable electrode and a fixed electrode.
- variation of an opposing area is also described in patent document 2, 3.
- JP 2007-139505 A Japanese Patent Application Laid-Open No. 2002-22446 JP 10-313123 A
- the present invention is intended to solve the above-mentioned conventional problems, and it is an object of the present invention to provide a MEMS sensor which is smaller and can obtain high sensitivity as compared with the prior art.
- the present invention relates to a MEMS sensor having a movable electrode portion and a fixed electrode portion,
- the first direction is a moving direction of the movable electrode portion
- the movable electrode portions are arranged at intervals in the first direction, and extend in the second direction, and a plurality of movable support portions are formed, and each movable support portion in the first direction
- a plurality of movable electrode elements extending from the side portion of the second support and spaced apart in the second direction at each movable support portion
- the fixed electrode portion is arranged at intervals in the first direction, and a plurality of fixed support portions whose extension direction from the proximal end side to the distal end side is opposite to the movable support portion, and each fixed A plurality of fixed electrodes which extend from the side of the support in a direction opposite to the extending direction of the movable electrode and are spaced apart from each other in the second direction by each fixed support;
- the plurality of movable electrode elements and the plurality of fixed electrode elements are alternately arranged at intervals in the second direction between the movable support portion and the fixed support portion of each set. Yes, The movement of the movable electrode portion in the first direction detects a change in electrostatic capacitance based on a change in the facing area between each movable electrode and each fixed electrode.
- a plurality of movable support portions constituting the movable electrode portion and a plurality of fixed support portions constituting the fixed electrode portion are alternately arranged in the first direction. Then, the movable support portions and the fixed support portions adjacent to each other are made in the same set, and a plurality of movable electrode elements and the fixed electrode elements are arranged in the second direction between the movable support portion and the fixed support portion in each set. Arranged alternately.
- a large number of movable electrode elements and fixed electrode elements can be efficiently disposed in the detection unit, and a smaller size and higher sensitivity can be obtained as compared with the conventional electrode structure.
- the plurality of movable support portions and the plurality of fixed support portions are not alternately arranged at intervals in the first direction. Then, as in the present invention, the movable support portion and the fixed support portion are divided into a plurality of sets, and in each set, the movable electrode element and the fixed electrode element are alternately arranged at an interval in the second direction.
- the electrode structure is not disclosed.
- the electrode structure of the present invention compared to the electrode structure disclosed in the patent document, it is possible to efficiently increase the variation area of the facing area between the movable electrode and the fixed electrode in the same detection unit. Can be raised enough.
- the capacitance is in inverse proportion to the gap (the distance)
- the change in capacitance becomes abrupt with respect to the change in distance, and the effective detection range (dynamic range) of the physical quantity by the MEMS sensor becomes narrow.
- the linearity of sensitivity within the effective detection range is deteriorated.
- the capacitance is proportional to the facing area, and the electrode described above
- the effective detection range (dynamic range) of the physical quantity can be broadened and the linearity of the sensitivity within the effective detection range can be effectively improved, as compared with the method of changing the capacitance by the fluctuation of the distance between Become.
- the present invention includes a first detection unit and a second detection unit, and each of the detection units includes the movable electrode unit and the fixed electrode unit.
- the extending directions of the movable electrode element and the fixed electrode element in the first direction are reversed between the first detection unit and the second detection unit, and are obtained by the first detection unit.
- a differential output can be obtained by the change in capacitance and the change in capacitance obtained by the second detection unit.
- each of the first detection unit and the second detection unit is divided into a plurality of detection areas, and each of the detection areas is provided with the movable electrode section and the fixed electrode section.
- the movable electrode portion and the fixed electrode portion can be efficiently arranged while maintaining the strength of each electrode portion, and the miniaturization of the MEMS sensor can be realized, and the sensitivity can be more effectively enhanced.
- the distance from the side portion of the movable support to the tip of the fixed electrode in the first direction is L1
- the second of the movable electrode and the fixed electrode is (L1-L2) 2 / T1 is 2 ( ⁇ m)
- T1 is the width dimension in the direction of L
- L2 is the maximum movable distance when the movable electrode moves in the direction toward the fixed support portion. Or more) is preferable.
- the distance in the first direction between the movable support portion of the adjacent set and the fixed support portion is L3, and the movable electrode element and the fixed electrode element
- the width dimension in the second direction is T1
- the maximum movable distance when the movable electrode element moves in the direction approaching the fixed support portion of the adjacent set is L4, (L3-L4)
- 2 ⁇ T 1 be 4 ( ⁇ m 3 ) or more. This can effectively improve the linearity of sensitivity.
- the MEMS sensor of the present invention it is possible to obtain a small size and high sensitivity as compared with the conventional electrode structure.
- FIG. 1 is a plan view showing a functional layer of a MEMS sensor according to an embodiment of the present invention.
- Fig.2 (a) is a partial enlarged plan view of a stationary state which shows a part of a movable electrode part shown in FIG. 1 and a fixed electrode part
- FIG.2 (b) receives acceleration from the stationary state of Fig.2 (a).
- It is a partial enlarged plan view which shows the state which the movable electrode part moved to X2 direction.
- 3 (a) is a partially enlarged plan view of a stationary state showing a part of the movable electrode portion and the fixed electrode portion shown in FIG. 1, and
- FIG. 3 (b) is a direction of the movable electrode portion X1 from the stationary state shown in FIG.
- FIG. 3 (c) is a partially enlarged plan view showing a state in which the movable electrode portion has moved in the X2 direction from the stationary state shown in FIG.
- FIG. 4 is a partial longitudinal cross-sectional view of the MEMS sensor shown in FIG. 1 taken along the line AA and viewed in the direction of the arrow.
- FIG. 5 (a) is a simulation result showing the relationship between the acceleration and the capacitance in the comparative example
- FIG. 5 (b) is a graph showing the relationship between FIG. 5 (a) without changing the size of the detection unit of the MEMS sensor. Is also a simulation result showing the relationship between the acceleration and the capacitance when the sensitivity is increased.
- FIG. 6 shows differential output curves of the capacitance change in the graph of (1) in FIG.
- FIG. 7 is a simulation result showing the relationship between acceleration and sensitivity.
- FIG. 8 is a simulation result showing the relationship between the acceleration and the capacitance in the example.
- FIG. 9 shows a differential output curve of the capacitance change shown in the graph (3) in FIG. 8 and the capacitance change shown in the graph (4).
- FIG. 10 is a simulation result showing the relationship between acceleration and sensitivity in the example. It is a simulation result which shows the relationship between the acceleration and the sensitivity in the Example which shows the relationship between the magnitude
- FIG. 14 is an explanatory view (plan view) for schematically showing a conventional electrode structure and for explaining a change in electrostatic capacity due to the movement of the movable electrode in the X1-X2 direction.
- FIG. 1 is a plan view showing a functional layer of a MEMS sensor according to an embodiment of the present invention
- FIG. 2 (a) is a partially enlarged plan view of a stationary state showing a part of a movable electrode portion and a fixed electrode portion shown in FIG. 2 (b) is a partially enlarged plan view showing the movable electrode portion moved in the X2 direction under acceleration from the stationary state of FIG. 2 (a)
- FIG. 3 (a) is the movable electrode shown in FIG. 3 (b) is a partially enlarged plan view showing the movable electrode portion moved in the X2 direction from the stationary state shown in FIG.
- FIG. (C) is a partial enlarged plan view showing a state in which the movable electrode part has moved in the X1 direction from the stationary state shown in FIG. 1
- FIG. 4 is a partial longitudinal sectional view of the MEMS sensor in the present embodiment.
- the MEMS sensor S has, for example, a rectangular shape having a long side in the X1-X2 direction (first direction) and a short side in the Y1-Y2 direction (second direction).
- the MEMS sensor S shown in FIG. 1 constitutes a single-axis detection acceleration sensor for detecting an acceleration acting in the X1-X2 direction.
- FIG. 1 only the functional layer 11 of the MEMS sensor S is taken up, and further, the weight 22 and the electrode portion positioned inside the frame 16 (see FIG. 4) of the functional layer 11 are illustrated.
- the support substrate 10 and the functional layer 11 are made of silicon, and the insulating layer 12 is made of SiO 2 .
- the fixed electrode portions 20a to 20d, the movable electrode portions 21a to 21d, the weight portion 22 and the frame 16 are separated from the silicon substrate.
- the planar shape of the functional layer 11 is rotationally symmetrical 180 degrees with respect to the center (center of gravity) O in the X1-X2 direction and the Y1-Y2 direction, and passes through the center O in the X direction It is symmetrical in the vertical direction (Y1-Y2 direction) with respect to the extending line.
- the first detection unit 23 is provided on the X1 side with respect to the center O, and the second detection unit 24 is provided on the X2 side. Furthermore, the first detection unit 23 is divided into a first detection area 23a on the Y1 side and a first detection area 23b on the Y2 side. The second detection unit 24 is divided into a second detection area 24a on the Y1 side and a second detection area 24b on the Y2 side.
- the first detection area 23a on the Y1 side is composed of the fixed electrode portion 20a and the movable electrode portion 21a.
- the first detection area 23b on the Y2 side is composed of the fixed electrode portion 20b and the movable electrode portion 21b.
- the second detection region 24a on the Y1 side is configured by the fixed electrode portion 20c and the movable electrode portion 21c.
- the second detection area 24b on the Y2 side is composed of the fixed electrode portion 20d and the movable electrode portion 21d.
- the insulating layer 12 is not formed between the movable electrode portions 21a to 21d and the support substrate 10 (see FIG. 4).
- the fixed electrode portions 20a to 20d are fixed to the support substrate 10 via the insulating layer 12.
- the portion excluding the first detection unit 23 and the second detection unit 24 in the movable region is the weight 22.
- the weight 22 is located around the first detection unit 23 and the second detection unit 24.
- the weight portion 22 is configured to have an X1 side region 22a, a Y1 side region 22b, an X2 side region 22c, and a Y2 side region 22d.
- a first anchor portion 26 formed separately from the weight portion 22 is provided closer to the Y1 side region 22 b of the weight portion 22 than the Y1 side region 22 b.
- the first anchor portion 26 is formed to be elongated in the X1-X2 direction.
- the first anchor portion 26 is fixed via the support substrate 10 and the insulating layer 12 shown in FIG.
- a second anchor portion 27 formed separately from the weight portion 22 is provided on the Y2 side of the Y2 side region 22 d of the weight portion 22.
- the second anchor portion 27 is formed to be elongated in the X1-X2 direction.
- the second anchor portion 27 is fixed via the support substrate 10 and the insulating layer 12 shown in FIG.
- the X1 side region 22 a of the weight portion 22 extends further to the X1 side than the first anchor portion 26 and the second anchor portion 27.
- a gap (interval) 28 having a predetermined width is formed between the Y1 side end 22a1 of the X1 side area 22a and the first anchor portion 26.
- a gap 29 having a predetermined width is formed between the Y2 side end 22a2 of the X1 side region 22a and the second anchor portion 27.
- the width dimensions of the gaps 28 and 29 in the X1-X2 direction are the same, and the gaps 28 and 29 restrict the dimension in which the weight 22 can move in the X1 direction from the resting state of FIG.
- the X2 side region 22c of the weight portion 22 extends further to the X2 side than the first anchor portion 26 and the second anchor portion 27.
- a gap 30 having a predetermined width is formed between the Y1 side end 22c1 of the X2 side region 22c and the first anchor portion 26.
- a gap 31 having a predetermined width is formed between the Y2 side end 22c2 of the X2 side region 22c and the second anchor portion 27.
- the width dimensions of the gaps 30 and 31 in the X1-X2 direction are the same, and the gaps 30 and 31 regulate the dimension in which the weight 22 can move in the X2 direction from the stationary state of FIG.
- a space 35 which extends from the respective gaps 28 and 29 to the inside in the Y1-Y2 direction and has a width slightly larger than the respective gaps 28 and 29. , 36 are formed.
- space portions 37, 38 which extend from the respective gaps 30, 31 to the inside in the Y1-Y2 direction and whose width dimension is slightly wider than the respective gaps 30, 31 are formed There is.
- spring portions 40 to 43 connecting the anchor portions 26 and 27 and the weight portion 22 are formed.
- the respective spring portions 40 to 43 are portions where the silicon substrate is cut out integrally with the respective anchor portions 26 and 27 and the weight portion 22 to have elasticity in the X1-X2 direction.
- the insulating layer 12 is not formed between the spring portions 40 to 43 and the weight portion 22 and the support substrate 10 (see FIG. 4). Therefore, when acceleration is received, the weight portion 22 can be moved in the X1-X2 direction by elastic deformation of the spring portions 40-43.
- each of the spring portions 40 to 43 are formed long in the Y1-Y2 direction, and are formed so as to be folded back between the respective anchor portions 26 and 27 and the weight portion 22.
- each of the spring portions 40 to 43 has rigidity in the Y1-Y2 direction, and suppresses the vibration of the weight portion 22 in the Y1-Y2 direction.
- the movable electrode portions 21a to 21d are formed integrally with the weight portion 22.
- Each of the movable electrode portions 21a to 21d is provided with a plurality of movable support portions 50 extending in the Y1-Y2 direction at intervals in the X1-X2 direction.
- Each movable support portion 50 extends inward from the Y1 side region 22b and the Y2 side region 22d of the weight portion 22.
- only one movable support portion 50 is denoted by a reference numeral for each of the movable electrode portions 21a to 21d.
- FIG. 1 only one movable support portion 50 is denoted by a reference numeral for each of the movable electrode portions 21a to 21d.
- the fixed electrode portions 20a to 20d are spaced apart from the fixed base 52 in the X1-X2 direction, and extend from the fixed base 52 in the Y1-Y2 direction.
- a plurality of fixed support portions 51 are provided. Note that, in FIG. 1, only one fixed support portion 51 is given a code for each of the fixed electrode portions 20a to 20d.
- the extending direction of the movable support 50 and the fixed support 51 is reverse.
- a plurality of movable support portions 50 and a plurality of fixed support portions 51 are alternately arranged at intervals in the X1-X2 direction.
- each fixed base 52 is fixed via the support substrate 10 and the insulating layer 12.
- the insulating layer 12 may be interposed between each fixed support 51 and the support substrate 10, since the fixed support 51 is thin, the insulating layer 12 between the fixed support 51 and the support substrate 10 is removed by etching.
- the fixed support portion 51 floats from the support substrate 10 in the same manner as the movable support portion 50. However, since each fixed support portion 51 is connected to the fixed base 52, it does not move in the X1-X2 direction even if it receives acceleration.
- the comb-like movable members are spaced apart in the Y1-Y2 direction from the side in the X1-X2 direction of each movable support 50 and the side in the X1-X2 direction from each fixed support 51.
- An electrode and a fixed electrode are formed. The movable electrode element and the fixed electrode element will be described with reference to FIGS. 2 and 3.
- FIG. 2 (a) shows a first detection area 23a and a second detection area 24a around the circle II shown in FIG.
- a movable support 50 elongated in the Y2 direction from the inner portion 22b1 of the Y1 side area 22b of the weight 22 is formed in a straight line.
- a plurality of movable support portions 50 are formed at intervals in the X1-X2 direction.
- a movable support 50 elongated in the Y2 direction from the inner portion 22b1 of the Y1 side area 22b of the weight 22 is formed in a straight line.
- a plurality of movable support portions 50 are formed at intervals in the X1-X2 direction.
- movable electrode elements 60 extending in the X2 direction from the X2 side end 50a of the movable support portion 50 provided in the first detection area 23a are spaced in the Y1-Y2 direction. Multiple bottles are formed. In FIG. 2A, only one movable electrode element 60 is given a code with respect to the movable support portion 50.
- movable electrode elements 61 extending in the X1 direction from the X1 side end 50b of the movable support portion 50 provided in the second detection area 24a are spaced in the Y1-Y2 direction. A plurality of bottles are formed.
- only one movable electrode element 61 is attached to the movable support portion 50, and the reference numeral is attached.
- the length dimension of the movable electrode element 60, 61 in the X1-X2 direction is sufficiently shorter than the length dimension of the movable support 50 in the Y1-Y2 direction. There is.
- a fixed support portion 51 elongated from the fixed base 52 in the Y1 direction is formed in a linear shape.
- the fixed support portions 51 are formed at intervals in the X1-X2 direction in a plurality of detection regions 23 a and 24 a, and each fixed support portion 51 is a movable support portion 50. And are arranged alternately.
- fixed electrode elements 62 extending in the X1 direction from the X1 side end 51b of the fixed support portion 51 provided in the first detection area 23a are spaced in the Y1-Y2 direction. Multiple bottles are formed. As shown in FIG. 2A, these fixed electrode elements 62 are alternately arranged in the Y1-Y2 direction at intervals from the movable electrode element 60. In FIG. 2A, only one fixed electrode element 62 is attached to the fixed support portion 51 with a reference numeral.
- fixed electrode elements 63 extending in the X2 direction from the X2 side end 51a of the fixed support portion 51 provided in the second detection area 24a are spaced in the Y1-Y2 direction. A plurality of bottles are formed. As shown in FIG. 2A, these fixed electrodes 63 are alternately arranged in the Y1-Y2 direction at intervals from the movable electrode 61. In FIG. 2A, only one fixed electrode 63 is attached to the fixed support portion 51, and the reference numeral is attached. As shown in FIG. 2A, the length dimension of the fixed electrode elements 62 and 63 in the X1-X2 direction is sufficiently shorter than the length dimension of the fixed support portion 51 in the Y1-Y2 direction. There is.
- FIG. 2A the electrode structure of the first detection area 23a on the Y1 side and the second detection area 24a on the Y1 side shown in FIG. 1 has been described, but the first detection area 23b on the Y2 side and the second on the Y2 side Each electrode structure in the detection region 24b is in a line symmetrical relationship with the electrode structure of FIG. 2A with respect to a line extending in the X1-X2 direction through the center O.
- FIG. 3 (a) illustrates the electrode structure around circle III shown in FIG.
- the movable support portions 50 and the fixed support portions 51 alternately arranged in the X1-X2 direction are respectively combined into one set 66.
- a plurality of movable electrode elements 60 and a plurality of fixed electrode elements 62 are alternately arranged at intervals in the Y1-Y2 direction between the movable support portion 50 and the fixed support portion 51 of each set 66. There is.
- the distance from the X2-side end 50a of the movable support 50 to the tip 62a of the fixed electrode 62 in the X1-X2 direction is L1. is there.
- the width dimension of the movable electrode 60 and the fixed electrode 62 in the Y1-Y2 direction is T1.
- the width dimension of the movable electrode 60 is represented by T1.
- an interval in the X1-X2 direction between the movable support portion 50 of the adjacent pair 66 and the fixed support portion 51 is indicated by L3.
- the overlapping length of the movable electrode element 60 and the fixed electrode element 62 is L5.
- Each movable electrode element 60 is located substantially at the center between the fixed electrode elements 62 located on both sides in the Y1-Y2 direction.
- each movable support 50 when the MEMS sensor S receives acceleration and the weight moves in the X2 direction, each movable support 50 also moves in the X2 direction, and each movable electrode 60 in each group 66
- the facing area (the area facing in the Y1-Y2 direction) between each fixed electrode element 62 is larger than that in the stationary state of FIG. 3A.
- the stationary state shown in FIG. The interval L1 in the state is L1-L2.
- the interval L3 in the stationary state in FIG. 3A is L3 + L2.
- each movable support 50 when the MEMS sensor S receives acceleration and the weight 22 moves in the X1 direction, each movable support 50 also moves in the X1 direction, and each movable electrode in each group 66 The facing area between the element 60 and each fixed electrode element 62 is smaller than that in the stationary state of FIG. 3 (a).
- the stationary state shown in FIG. The interval L3 in the state is L3-L4.
- the interval L1 in the stationary state in FIG. 3A is L1 + L4.
- the movable electrodes in the first detection areas 23a and 23b are as described in FIG. 3 (b).
- the facing area between the child 60 and the fixed electrode 62 increases, the facing area between the movable electrode 61 and the fixed electrode 63 decreases in the second detection regions 24a and 24b.
- the X1-X2 directions of the movable electrode elements 60 and 61 and the fixed electrode elements 62 and 63 This is because the extending direction is reversed.
- the movable electrode 61 and the second detection regions 24a and 24b increase.
- the opposing area between the fixed electrode pieces 63 is reduced to reduce the capacitance.
- the opposing area between the movable electrode element 60 and the fixed electrode element 62 decreases in the first detection areas 23a and 23b and the capacitance decreases, the second detection areas 24a and 24b are fixed to the movable electrode element 61.
- the opposing area between the electrode elements 63 is increased to increase the capacitance.
- the maximum movable distances L2 and L4 of the weight portion 22 and the movable electrode portions 21a to 21d described above are regulated by the sizes of the gaps 28 to 31 shown in FIG. 1 in the X1-X2 direction.
- the frame 16 not shown in FIG. 1 is separated from the weight 22 shown in FIG. 1 and surrounds the periphery of the weight 22. As shown in FIG. It is fixed through twelve.
- the frame 16 and the fixed bases 52 constituting the functional layer 11 and the wiring board 15 are connected by the metal connection portion 14.
- the wiring substrate 15 is illustrated as a single layer structure, but in practice, an insulating layer is formed on the surface of the silicon substrate (the surface facing the functional layer 11), and the wiring layer 70 is formed inside the insulating layer. It is a formed structure.
- the wiring layer 70 is electrically connected to the fixed base 52 via the metal connection portion 14, and the wiring layer 70 is connected to the pad portion 71 outside the frame 16. Further, although not shown in FIG. 4, a ground pad or the like is also formed on the outside of the frame 16.
- the action direction of the acceleration can be known from the magnitude of the acceleration and the sign (plus value or minus value) of the differential output based on the differential output.
- Example 1 Relationship between Acceleration and Capacitance and Relationship between Acceleration and Sensitivity in Comparative Example
- the movable electrode elements 60 and 61 and the fixed electrode elements 62 and 63 shown in FIGS. 1 to 3 are not formed, and a plurality of movable support portions 50 and a plurality of fixed support portions 51 are comb-shaped electrodes.
- An experiment was conducted using the electrode structure as a comparative example. In the comparative example, when the weight 22 moves in the X1-X2 direction by receiving an acceleration, it is possible to obtain a capacitance change by changing the gap (distance) between the comb-like electrodes (see FIG. 17).
- FIG. 5A is a simulation result showing the relationship between the acceleration and the capacitance in the comparative example.
- the size of the gaps a and b shown in FIG. 17 is set to 1.7 ⁇ m.
- the graph (1) shown in FIG. 5A when a positive acceleration is applied, the gap between the movable electrode and the fixed electrode is increased, the capacitance is decreased, and a negative acceleration is applied. The change in the electrostatic capacitance in the detection part which the gap between a movable electrode and a fixed electrode becomes small, and an electrostatic capacitance increases is shown.
- the gap between the movable electrode and the fixed electrode is increased, the capacitance is decreased, and a positive acceleration is applied.
- the change in the electrostatic capacitance in the detection part which the gap between a movable electrode and a fixed electrode becomes small, and an electrostatic capacitance increases is shown.
- the “plus value” and the “minus value” indicate, for example, a relationship in which the minus value is the reverse X2 direction, assuming that the acceleration of the plus value is the X1 direction.
- FIG. 5 (b) shows the acceleration and the electrostatics when the spring constant of the spring parts 40 to 43 is made smaller than that of FIG. 5 (a) to increase the sensitivity without changing the size of the detection part of the MEMS sensor. It is a simulation result which shows a relation with capacity.
- the size of the gaps a and b shown in FIG. 17 was set to 1.7 ⁇ m.
- the change in capacitance becomes sharper than in FIG. 5 (a)
- the effective detection range (dynamic range) r2 of acceleration in FIG. 5 (b) is shown in FIG. 5 (a). It has been found that the dynamic range r1 is narrower than the dynamic range r1.
- FIG. 6 shows a differential output curve based on the capacitance change in the graph of (1) in FIG. 5A and the capacitance change in the graph of (2). As shown in FIG. 6, it was found that as the acceleration (absolute value) increases, the change in capacitance (differential output) increases.
- FIG. 7 is a simulation result showing the relationship between acceleration and sensitivity.
- the sensitivity is indicated by the slope of the differential output curve shown in FIG. As shown in FIG. 7, it was found that the sensitivity curve did not become flat and linear with respect to the acceleration (absolute value), and the sensitivity curve changed more greatly as the acceleration (absolute value) became larger.
- FIG. 8 is a simulation result showing the relationship between the acceleration and the capacitance in the example.
- L1 and L3 shown in FIG. 3A were set in the range of 4 to 6 ⁇ m, and the width dimension T1 of the electrode was set to 1.2 ⁇ m.
- the graph of (3) shown in FIG. 8 when an acceleration with a positive value acts, the opposing area between the movable electrode and the fixed electrode decreases and the capacitance decreases (the state of FIG.
- FIG. 9 shows a differential output curve based on the capacitance change shown in the graph (3) in FIG. 8 and the capacitance change shown in the graph (4).
- FIG. 10 is a simulation result which shows the relationship between the acceleration and the sensitivity in an Example. The sensitivity is indicated by the slope of the differential output curve shown in FIG.
- the differential output curve is linearly inclined with respect to the acceleration (absolute value) (linear curve), and as shown in FIG. 10, the sensitivity is substantially equal to the acceleration (absolute value). It turned out to be flat.
- the number of comb-teeth electrodes must be increased to increase the opposing area of the electrodes. It can be seen that the size will increase.
- the effective detection range dynamic range
- the maximum movable distance L2 of the movable support portion 50 when the movable electrode elements 60 approach the fixed support portion 51 which is a set is 2 ⁇ m. 2 ⁇ m corresponds to the case where an acceleration (absolute value) of 100 G acts.
- L1 is about 3 ⁇ m or more
- the sensitivity (at rest) in the stationary state in FIG. 3A is measured
- the movable support 50 is 2 ⁇ m in the direction of the fixed support 51.
- the sensitivity when moving (100 G (absolute value)) was measured.
- [Sensitivity (100 G (absolute value)) / Sensitivity (at rest)] ⁇ 100 (%) was taken as the maximum swing width of the vertical axis in FIG.
- the maximum fluctuation range of the sensitivity increases as L1 decreases.
- the fact that the maximum swing width of sensitivity is increased due to the decrease in L1 is not only the change in the facing area between the movable electrode and the fixed electrode, but also the change in portions other than the facing area. This is because the capacitance is easily changed.
- FIG. 12 shows the relationship between L1-L2 (L2 is 2 ⁇ m) shown in FIG. 3B and the maximum swing of the sensitivity. As shown in FIG. 12, it was found that the maximum fluctuation width (absolute value) of the sensitivity can be suppressed to 10% or less by setting L1-L2 to approximately 1.6 ⁇ m or more.
- FIG. 13 shows the relationship between (L 1 ⁇ L 2 ) 2 / T 1 and the maximum fluctuation range of the sensitivity.
- FIG. 15 shows the relationship between L3-L4 (L4 is 2 ⁇ m) shown in FIG. 3C and the maximum swing of the sensitivity.
- the graph of (5) shown in FIG. 15 is based on the graph of (5) of FIG. 14, and the graph of (6) shown in FIG. 15 is based on the graph of (6) of FIG. .
- L1 and L3 are interlocked with each other
- L1 and L3 are interlocked with each other
- the width of the electrode is
- the experiment (the graph of (8)) which set dimension T1 to 1.6 micrometers was also conducted.
- FIG. 16 shows the relationship between (L3 ⁇ L4) 2 ⁇ T1 and the maximum amplitude of the sensitivity.
- Three curves shown in FIG. 16 are based on the graphs of (6), (7) and (8) shown in FIG.
- (L3 ⁇ L4) 2 ⁇ T1 has substantially the same curve regardless of the size of the width dimension T1 of the electrode element (normalization). Then, as shown in FIG. 16, it was found that by setting (L3 ⁇ L4) 2 ⁇ T1 to 4 ( ⁇ m 3 ) or more, the maximum amplitude (absolute value) of the sensitivity can be suppressed to 10% or less.
- L1 and L3 are not interlocked with each other, it is preferable to set L3> L1 in the stationary state of FIG. 3 (a).
- L1 is about 3.6 ⁇ m when the maximum fluctuation range of the sensitivity is 10 (%). At this time, L3 is 5 ⁇ m.
- L3 when the maximum swing of the sensitivity is 10 (%) is about 4.4 ⁇ m. At this time, L1 is 5 ⁇ m.
- the smaller dimension (L1) can be set smaller in the experiment of FIG. 11 where L3> L1. Therefore, miniaturization of the MEMS sensor can be promoted while maintaining high sensitivity and good linearity.
- L5 is greater than or equal to L2 and L4.
- the MEMS sensor S in the present embodiment includes a plurality of movable support portions 50 constituting the movable electrode portions 21a to 21d and a plurality of fixed support portions 51 constituting the fixed electrode portions 20a to 20d in the same detection portion. They are alternately arranged in the X1-X2 direction (first direction). Then, the movable support 50 and the fixed support 51 adjacent to each other are formed in the same set 66, and fixed between the movable support 60 and the plurality of movable electrodes 60 and 61 between the movable support 50 and the fixed support 51 in each set 66. Electrode elements 62 and 63 were alternately arranged in the Y1-Y2 direction (second direction).
- the electrode structure shown in each patent document obtains the capacitance change based on the change in the facing area between the movable electrode and the fixed electrode, but only one set of movable electrode and fixed electrode is provided in the same detection unit. . That is, in the electrode structure described in the patent document, a plurality of movable support portions 50 and a plurality of fixed support portions 51 are alternately arranged at intervals in the X1-X2 direction as in the present embodiment.
- the movable support 50 and the fixed support 51 are divided into a plurality of sets, and in each set, the movable electrode elements 60 and 61 and the fixed electrode elements 62 and 63 have an interval in the Y1-Y2 direction.
- the movable electrode elements 60 and 61 and the fixed electrode elements 62 and 63 have an interval in the Y1-Y2 direction.
- the electrode structure of this embodiment compared with the electrode structure disclosed in the patent document, the opposing area between the movable electrode element 60, 61 and the fixed electrode element 62, 63
- the fluctuation range can be effectively increased, and the sensitivity can be enhanced.
- the capacitance is inversely proportional to the gap (distance), as shown in FIG. 5 to FIG.
- the electrostatic capacitance changes rapidly with respect to the distance fluctuation (see FIG. 5B), and the effective detection range (dynamic range) of the physical quantity by the MEMS sensor becomes narrow.
- the linearity of sensitivity within the effective detection range can not be improved (see FIG. 7).
- the capacitance is made proportional to the facing area
- the effective detection range (dynamic range) of the physical quantity can be broadened and the linearity of sensitivity within the effective detection range is improved. Becomes possible.
- (L1-L2) 2 / T1 is set to 2 ( ⁇ m) or more, and (L3-L4) 2 ⁇ T1 is set to 4 ( ⁇ m 3 ) or more.
- (L1-L2) 2 / T1 is set to 2 ( ⁇ m) or more
- (L3-L4) 2 ⁇ T1 is set to 4 ( ⁇ m 3 ) or more.
- the first detection unit 23 is divided into a plurality of detection areas 23a and 23b
- the second detection unit 24 is divided into a plurality of detection areas 24a and 24b
- each detection area 23a, 23b, 24a and 24b is divided.
- FIG. 1 shows a MEMS sensor for detecting an acceleration acting in the X1-X2 direction, but if rotated 90 degrees from the state of FIG. 1, a MEMS sensor for detecting an acceleration acting in the Y1-Y2 direction it can.
- the present embodiment is applicable not only to acceleration sensors but also to physical quantity sensors in general, such as angular velocity sensors and impact sensors.
- S MEMS sensor 10 support substrate 11 functional layer 12 insulating layer 13 SOI substrate 14 metal connection portion 15 wiring substrate 16 frame 20a to 20d fixed electrode portion 21a to 21d movable electrode portion 22 weight portion 23 first detection portion 23a, 23b first Detection area 24 Second detection section 24a, 24b Second detection area 26, 27 Anchor section 28 to 31 Gap 40 to 43 Spring section 50 Movable support section 51 Fixed support section 52 Fixed base 60, 61 Movable electrode element 62, 63 Fixed electrode Child 66 Pair 70 Wiring Layer
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Abstract
Description
本発明は、シリコン(Silicon)層を加工するなどして形成された静電容量型のMEMSセンサに係り、特に、電極構造に関する。 The present invention relates to a capacitive MEMS sensor formed by processing a silicon (Silicon) layer or the like, and more particularly to an electrode structure.
静電容量型のMEMSセンサは、錘部、可動電極部及び固定電極部を有して構成される。例えば加速度がMEMSセンサに作用すると、錘部及び可動電極部が移動し、可動電極部と固定電極部との間で静電容量変化が生じる。この静電容量変化に基づいて加速度を検出することが可能である。 The capacitive MEMS sensor is configured to have a weight portion, a movable electrode portion, and a fixed electrode portion. For example, when acceleration acts on the MEMS sensor, the weight portion and the movable electrode portion move, and a capacitance change occurs between the movable electrode portion and the fixed electrode portion. It is possible to detect acceleration based on the change in capacitance.
図17は従来のMEMSセンサの可動電極部及び固定電極部を模式的に示した説明図(平面図)である。このMEMSセンサは、面内方向での加速度を検出するものであり、例えばX1-X2方向に作用する加速度を検出可能とされている。 FIG. 17 is an explanatory view (plan view) schematically showing a movable electrode portion and a fixed electrode portion of a conventional MEMS sensor. The MEMS sensor detects an acceleration in the in-plane direction, and can detect an acceleration acting in, for example, the X1-X2 direction.
図17(a)はMEMSセンサの静止状態を示している。図17(a)に示すようにMEMSセンサには、第1検出部1と第2検出部2とがあり、第1検出部1及び第2検出部2に夫々、複数本の櫛歯状の固定電極1a,2aと複数本の櫛歯状の可動電極1b,2bとがX1-X2方向に間隔を空けて交互に配置されている。
FIG. 17 (a) shows the stationary state of the MEMS sensor. As shown in FIG. 17A, the MEMS sensor includes a
図17(a)に示すように、第1検出部1では、可動電極1bと前記可動電極1bに対してX1側に位置する固定電極1aとの間に所定の距離からなる第1のギャップa0が設けられている。また第2検出部2では、可動電極2bと前記可動電極2bに対してX2側に位置する固定電極2aとの間に所定の距離からなる第2のギャップb0が設けられている。
As shown in FIG. 17A, in the
図17(b)に示すように、加速度の作用により、第1検出部1での可動電極1b及び第2検出部2での可動電極2bが夫々、X1方向に移動すると、図17(b)での第1のギャップa1は図17(a)の静止状態でのギャップa0よりも小さくなり、一方、第2のギャップb1は図17(a)の静止状態でのギャップb0よりも大きくなる。
As shown in FIG. 17B, when the movable electrode 1b in the
また図17(c)に示すように、加速度の作用により、第1検出部1での可動電極1b及び第2検出部2での可動電極2bが夫々、X2方向に移動すると、図17(c)での第1のギャップa2は図17(a)の静止状態でのギャップa0よりも大きくなり、一方、第2のギャップb2は図17(a)の静止状態でのギャップb0よりも小さくなる。
Further, as shown in FIG. 17C, when the movable electrode 1b in the
図17(b)及び図17(c)に示したように加速度がX1-X2方向に作用することで、可動電極1b,2bと固定電極1a,2aとの間のギャップa,bが変化し、これにより静電容量が変化する。このとき、第1検出部1での静電容量変化と第2検出部2での静電容量変化は逆になる。
As shown in FIGS. 17B and 17C, the accelerations acting in the X1-X2 direction change the gaps a and b between the
特許文献1には、上記した図17と同様に可動電極と固定電極との間のギャップの変化により静電容量変化を生じさせる電極構造が記載されている。また、それ以外に特許文献1には、可動電極と固定電極との間の対向面積の変動による静電容量変化を検出可能な電極構造も記載されている。対向面積の変動により静電容量変化を生じさせる電極構造は特許文献2,3にも記載されている。
しかしながら従来の電極構造では、MEMSセンサの小型化とともに感度の向上を十分に図ることが困難になっていた。 However, in the conventional electrode structure, it has been difficult to sufficiently improve the sensitivity as well as to miniaturize the MEMS sensor.
そこで本発明は上記従来の課題を解決するものであり、従来に比べて、小型で且つ、高い感度を得ることが可能なMEMSセンサを提供することを目的としている。 Therefore, the present invention is intended to solve the above-mentioned conventional problems, and it is an object of the present invention to provide a MEMS sensor which is smaller and can obtain high sensitivity as compared with the prior art.
本発明は、可動電極部および固定電極部を有するMEMSセンサにおいて、
水平面内にて直交する2方向を第1の方向と第2の方向としたとき、前記第1の方向が前記可動電極部の移動方向であり、
前記可動電極部は、前記第1の方向に間隔を空けて配置され前記第2の方向に延出して形成された複数本の可動支持部と、前記第1の方向に向けて各可動支持部の側部から延出し、各可動支持部にて前記第2の方向に間隔を空けて配置された複数本の可動電極子と、を有し、
前記固定電極部は、前記第1の方向に間隔を空けて配置され基端側から先端側への延出方向が前記可動支持部とは逆方向である複数本の固定支持部と、各固定支持部の側部から前記可動電極子の延出方向とは逆方向に延出し、各固定支持部にて前記第2の方向に間隔を空けて配置された複数本の固定電極子と、を有し、
複数本の前記可動支持部と複数本の前記固定支持部とが前記第1の方向に間隔を空けて交互に配列されており、隣り合う前記可動支持部と前記固定支持部とが組にされて、各組の前記可動支持部と前記固定支持部の間にて複数本の前記可動電極子と複数本の前記固定電極子とが前記第2の方向に間隔を空けて交互に配列されており、
前記可動電極部の前記第1の方向への移動により、各可動電極子と各固定電極子間の対向面積の変化に基づく静電容量変化を検出することを特徴とするものである。
The present invention relates to a MEMS sensor having a movable electrode portion and a fixed electrode portion,
When two directions orthogonal to each other in a horizontal plane are a first direction and a second direction, the first direction is a moving direction of the movable electrode portion,
The movable electrode portions are arranged at intervals in the first direction, and extend in the second direction, and a plurality of movable support portions are formed, and each movable support portion in the first direction A plurality of movable electrode elements extending from the side portion of the second support and spaced apart in the second direction at each movable support portion,
The fixed electrode portion is arranged at intervals in the first direction, and a plurality of fixed support portions whose extension direction from the proximal end side to the distal end side is opposite to the movable support portion, and each fixed A plurality of fixed electrodes which extend from the side of the support in a direction opposite to the extending direction of the movable electrode and are spaced apart from each other in the second direction by each fixed support; Have
A plurality of the movable support portions and a plurality of the fixed support portions are alternately arranged at intervals in the first direction, and the adjacent movable support portions and the fixed support portions are combined. The plurality of movable electrode elements and the plurality of fixed electrode elements are alternately arranged at intervals in the second direction between the movable support portion and the fixed support portion of each set. Yes,
The movement of the movable electrode portion in the first direction detects a change in electrostatic capacitance based on a change in the facing area between each movable electrode and each fixed electrode.
本発明では、同じ検出部内に、可動電極部を構成する複数本の可動支持部と、固定電極部を構成する複数本の固定支持部とを第1の方向に交互に配列している。そして、隣り合う可動支持部と固定支持部とを同じ組にし、各組での可動支持部と固定支持部との間に、複数本の可動電極子と固定電極子とを第2の方向に交互に配列した。これにより検出部内に効率よく、多数の可動電極子と固定電極子を配置でき、従来の電極構造に比べて、小型で且つ、高い感度を得ることが出来る。特許文献1~3では、複数本の可動支持部と複数本の固定支持部とが第1の方向に間隔を空けて交互に配列されたものでない。そして本発明のように前記可動支持部と前記固定支持部が複数組に区分けされ、各組にて、可動電極子と固定電極子とが第2の方向に間隔を空けて交互に配列された電極構造は開示されていない。
In the present invention, in the same detection unit, a plurality of movable support portions constituting the movable electrode portion and a plurality of fixed support portions constituting the fixed electrode portion are alternately arranged in the first direction. Then, the movable support portions and the fixed support portions adjacent to each other are made in the same set, and a plurality of movable electrode elements and the fixed electrode elements are arranged in the second direction between the movable support portion and the fixed support portion in each set. Arranged alternately. As a result, a large number of movable electrode elements and fixed electrode elements can be efficiently disposed in the detection unit, and a smaller size and higher sensitivity can be obtained as compared with the conventional electrode structure. In
本発明の電極構造とすることで、特許文献に開示された電極構造に比べて、同じ検出部内に、可動電極子と固定電極子間の対向面積の変動領域を効率よく増やすことができ、感度を十分高めることが可能になる。 According to the electrode structure of the present invention, compared to the electrode structure disclosed in the patent document, it is possible to efficiently increase the variation area of the facing area between the movable electrode and the fixed electrode in the same detection unit. Can be raised enough.
また、図17で示したように可動電極と固定電極間のギャップ(距離)を変動させて静電容量変化を生じさせる電極構造では、静電容量はギャップ(距離)に反比例し、後述する比較例として示すように、感度を高めると、距離の変動に対して静電容量変化が急激なものとなり、MEMSセンサによる物理量の有効検出範囲(ダイナミックレンジ)が狭くなる。さらに前記有効検出範囲内での感度のリニアリティが悪化する問題も生じる。 Further, in the electrode structure in which the capacitance (the distance) between the movable electrode and the fixed electrode is changed to cause the capacitance change as shown in FIG. 17, the capacitance is in inverse proportion to the gap (the distance) As shown as an example, when the sensitivity is increased, the change in capacitance becomes abrupt with respect to the change in distance, and the effective detection range (dynamic range) of the physical quantity by the MEMS sensor becomes narrow. Furthermore, there is also a problem that the linearity of sensitivity within the effective detection range is deteriorated.
これに対して本発明のように可動電極子と固定電極子間の対向面積を変動させて静電容量を変化させる電極構造では、静電容量は対向面積に比例することになり、上記した電極間の距離の変動で静電容量を変化させる方式に比べて、物理量の有効検出範囲(ダイナミックレンジ)を広くできるとともに前記有効検出範囲内での感度のリニアリティを効果的に向上させることが可能になる。 On the other hand, in the electrode structure in which the capacitance is changed by changing the facing area between the movable electrode and the fixed electrode as in the present invention, the capacitance is proportional to the facing area, and the electrode described above The effective detection range (dynamic range) of the physical quantity can be broadened and the linearity of the sensitivity within the effective detection range can be effectively improved, as compared with the method of changing the capacitance by the fluctuation of the distance between Become.
本発明では、第1検出部と第2検出部とを有し、各検出部の夫々に、前記可動電極部及び前記固定電極部を備え、
前記可動電極子と前記固定電極子との前記第1の方向への延出方向が、前記第1検出部と前記第2検出部とで逆にされており、前記第1検出部により得られた静電容量変化と、前記第2検出部により得られた静電容量変化により差動出力を得ることができることが好ましい。
The present invention includes a first detection unit and a second detection unit, and each of the detection units includes the movable electrode unit and the fixed electrode unit.
The extending directions of the movable electrode element and the fixed electrode element in the first direction are reversed between the first detection unit and the second detection unit, and are obtained by the first detection unit. Preferably, a differential output can be obtained by the change in capacitance and the change in capacitance obtained by the second detection unit.
また上記の構成において、前記第1検出部及び前記第2検出部の夫々が、複数の検出領域に区分されており、各検出領域の夫々に、前記可動電極部及び前記固定電極部を備えることが好ましい。これにより、各電極部の強度を保ちながら可動電極部と固定電極部とを効率よく配置できMEMSセンサの小型化を実現できるとともに、感度をより効果的に高めることができる。 In the above configuration, each of the first detection unit and the second detection unit is divided into a plurality of detection areas, and each of the detection areas is provided with the movable electrode section and the fixed electrode section. Is preferred. As a result, the movable electrode portion and the fixed electrode portion can be efficiently arranged while maintaining the strength of each electrode portion, and the miniaturization of the MEMS sensor can be realized, and the sensitivity can be more effectively enhanced.
また本発明では、静止状態において、前記可動支持部の側部から前記固定電極子の先端までの前記第1の方向への間隔をL1とし、前記可動電極子及び前記固定電極子の前記第2の方向への幅寸法をT1とし、前記可動電極子が前記固定支持部へ近づく方向に移動したときの最大の移動可能距離をL2としたとき、(L1-L2)2/T1が2(μm)以上であることが好ましい。これにより、効果的に感度のリニアリティを向上させることができる。 In the present invention, in the stationary state, the distance from the side portion of the movable support to the tip of the fixed electrode in the first direction is L1, and the second of the movable electrode and the fixed electrode is (L1-L2) 2 / T1 is 2 (μm), where T1 is the width dimension in the direction of L and L2 is the maximum movable distance when the movable electrode moves in the direction toward the fixed support portion. Or more) is preferable. Thereby, the linearity of the sensitivity can be effectively improved.
また本発明では、静止状態において、隣り合う前記組の前記可動支持部と前記固定支持部との間における前記第1の方向への間隔をL3とし、前記可動電極子及び前記固定電極子の前記第2の方向への幅寸法をT1とし、前記可動電極子が隣り合う前記組の前記固定支持部へ近づく方向に移動したときの最大の移動可能距離をL4としたとき、(L3-L4)2×T1が4(μm3)以上であることが好ましい。これにより効果的に感度のリニアリティを向上させることができる。
Further, in the present invention, in the stationary state, the distance in the first direction between the movable support portion of the adjacent set and the fixed support portion is L3, and the movable electrode element and the fixed electrode element Assuming that the width dimension in the second direction is T1, and the maximum movable distance when the movable electrode element moves in the direction approaching the fixed support portion of the adjacent set is L4, (L3-L4) It is preferable that 2 ×
本発明のMEMSセンサによれば、従来の電極構造に比べて、小型で且つ、高い感度を得ることができる。 According to the MEMS sensor of the present invention, it is possible to obtain a small size and high sensitivity as compared with the conventional electrode structure.
図1は本発明の実施の形態のMEMSセンサの機能層を示す平面図、図2(a)は、図1に示す可動電極部及び固定電極部の一部を示す静止状態の部分拡大平面図、図2(b)は図2(a)の静止状態から加速度を受けて可動電極部がX2方向に移動した状態を示す部分拡大平面図、図3(a)は、図1に示す可動電極部及び固定電極部の一部を示す静止状態の部分拡大平面図、図3(b)は図1に示す静止状態から可動電極部がX2方向に移動した状態を示す部分拡大平面図、図3(c)は、図1に示す静止状態から可動電極部がX1方向に移動した状態を示す部分拡大平面図、図4は本実施形態におけるMEMSセンサの部分縦断面図である。 FIG. 1 is a plan view showing a functional layer of a MEMS sensor according to an embodiment of the present invention, and FIG. 2 (a) is a partially enlarged plan view of a stationary state showing a part of a movable electrode portion and a fixed electrode portion shown in FIG. 2 (b) is a partially enlarged plan view showing the movable electrode portion moved in the X2 direction under acceleration from the stationary state of FIG. 2 (a), and FIG. 3 (a) is the movable electrode shown in FIG. 3 (b) is a partially enlarged plan view showing the movable electrode portion moved in the X2 direction from the stationary state shown in FIG. 1, FIG. (C) is a partial enlarged plan view showing a state in which the movable electrode part has moved in the X1 direction from the stationary state shown in FIG. 1, and FIG. 4 is a partial longitudinal sectional view of the MEMS sensor in the present embodiment.
図1に示すように、MEMSセンサSは、例えばX1-X2方向(第1の方向)が長辺でY1-Y2方向(第2の方向)が短辺の長方形状である。図1に示すMEMSセンサSは、X1-X2方向に作用する加速度を検出するための一軸検出の加速度センサを構成している。 As shown in FIG. 1, the MEMS sensor S has, for example, a rectangular shape having a long side in the X1-X2 direction (first direction) and a short side in the Y1-Y2 direction (second direction). The MEMS sensor S shown in FIG. 1 constitutes a single-axis detection acceleration sensor for detecting an acceleration acting in the X1-X2 direction.
図4に示すようにMEMSセンサSは、支持基板10と機能層11とが絶縁層12を介して積層されたSOI基板13と、SOI基板13と高さ方向に対向し金属接続部14を介して接合された配線基板15とを有して構成される。ここで図1ではMEMSセンサSのうち機能層11のみを取り上げ、さらに機能層11のうち枠体16(図4参照)の内側に位置する錘部22及び電極部を図示している。
As shown in FIG. 4, in the MEMS sensor S, the
例えば、支持基板10及び機能層11はシリコンからなり、絶縁層12は、SiO2からなる。
For example, the
図1,図4に示すように、機能層11は、シリコン基板から固定電極部20a~20d、可動電極部21a~21d、錘部22および枠体16が分離されて形成されている。
As shown in FIGS. 1 and 4, in the
図1に示すように、機能層11の平面形状は、X1-X2方向及びY1-Y2方向の中心(図心)Oに対して180度の回転対称であり、且つ中心Oを通りX方向に延びる線に対して上下方向(Y1-Y2方向)に対称である。
As shown in FIG. 1, the planar shape of the
図1に示すように、中心OよりもX1側に第1検出部23が設けられ、X2側に第2検出部24が設けられる。さらに第1検出部23は、Y1側の第1検出領域23aとY2側の第1検出領域23bとに区分されている。また第2検出部24は、Y1側の第2検出領域24aとY2側の第2検出領域24bとに区分されている。
As shown in FIG. 1, the
図1に示すようにY1側の第1検出領域23aは固定電極部20aと可動電極部21aとで構成されている。またY2側の第1検出領域23bは固定電極部20bと可動電極部21bとで構成されている。またY1側の第2検出領域24aは固定電極部20cと可動電極部21cとで構成されている。またY2側の第2検出領域24bは固定電極部20dと可動電極部21dとで構成されている。各可動電極部21a~21dと支持基板10との間に絶縁層12は形成されていない(図4参照)。一方、各固定電極部20a~20dは支持基板10に絶縁層12を介して固定されている。
As shown in FIG. 1, the
可動領域において第1検出部23及び第2検出部24を除いた部分が錘部22である。図1では前記錘部22は第1検出部23及び第2検出部24の周囲に位置している。
The portion excluding the
図1に示すように錘部22は、X1側領域22a、Y1側領域22b、X2側領域22c及びY2側領域22dを有して構成される。
As shown in FIG. 1, the
図1に示すように錘部22のY1側領域22bよりもY1側には、錘部22と分離して形成された第1アンカ部26が設けられている。第1アンカ部26はX1-X2方向に長い細長状で形成されている。第1アンカ部26は、図4に示す支持基板10と絶縁層12を介して固定されている。
As shown in FIG. 1, a
また図1に示すように、錘部22のY2側領域22dよりもY2側には、錘部22と分離して形成された第2アンカ部27が設けられている。第2アンカ部27はX1-X2方向に長い細長状で形成されている。第2アンカ部27は、図4に示す支持基板10と絶縁層12を介して固定されている。
Further, as shown in FIG. 1, a
図1に示すように、錘部22のX1側領域22aは、第1アンカ部26及び第2アンカ部27よりも更にX1側に延びている。そしてX1側領域22aのY1側端部22a1と、第1アンカ部26との間には所定幅からなるギャップ(間隔)28が形成されている。また、X1側領域22aのY2側端部22a2と、第2アンカ部27との間には所定幅からなるギャップ29が形成されている。前記ギャップ28,29のX1-X2方向への幅寸法は同じ寸法であり、前記ギャップ28,29は、錘部22が図1の静止状態からX1方向へ移動可能な寸法を規制する。
As shown in FIG. 1, the
また、図1に示すように、錘部22のX2側領域22cは、第1アンカ部26及び第2アンカ部27よりも更にX2側に延びている。そしてX2側領域22cのY1側端部22c1と、第1アンカ部26との間には所定幅からなるギャップ30が形成されている。また、X2側領域22cのY2側端部22c2と、第2アンカ部27との間には所定幅からなるギャップ31が形成されている。前記ギャップ30,31のX1-X2方向への幅寸法は同じ寸法であり、前記ギャップ30,31は、錘部22が図1の静止状態からX2方向へ移動可能な寸法を規制する。
Further, as shown in FIG. 1, the
また図1に示すように、錘部22のX1側領域22aには、各ギャップ28,29からY1-Y2方向への内側に延び、各ギャップ28,29よりも幅寸法のやや広い空間部35,36が形成されている。また、錘部22のX2側領域22cには、各ギャップ30,31からY1-Y2方向への内側に延び、各ギャップ30,31よりも幅寸法のやや広い空間部37,38が形成されている。
Further, as shown in FIG. 1, in the
そして各空間部35~38では、各アンカ部26,27と錘部22とを繋げるバネ部40~43が形成されている。各バネ部40~43は、シリコン基板を各アンカ部26,27及び錘部22と一体に切り出してX1-X2方向への弾性を持たせた箇所である。バネ部40~43及び錘部22と支持基板10との間に絶縁層12は形成されていない(図4参照)。よって、加速度を受けると、錘部22はバネ部40~43の弾性変形によりX1-X2方向へ移動できるようになっている。
In each of the
図1に示すように各バネ部40~43はY1-Y2方向に長く形成されており、また各アンカ部26,27と錘部22との間で折り返して形成されている。これにより各バネ部40~43はY1-Y2方向へ剛性を持ち、錘部22のY1-Y2方向への振動を抑制している。
As shown in FIG. 1, the
図1に示すように、錘部22と一体となって各可動電極部21a~21dが形成されている。各可動電極部21a~21dには、X1-X2方向に間隔を空けてY1-Y2方向に延出する複数本の可動支持部50が設けられている。各可動支持部50は錘部22のY1側領域22b及びY2側領域22dから内方向に向けて延出している。なお図1では、各可動電極部21a~21dに対して夫々、一本の可動支持部50にのみ符号を付した。また、図1に示すように、各固定電極部20a~20dは、固定基部52と、X1-X2方向に間隔を空けて配置され、前記固定基部52からY1-Y2方向に延出して形成された複数本の固定支持部51が設けられている。なお図1では、各固定電極部20a~20dに対して夫々、一本の固定支持部51にのみ符号を付した。各検出領域23a,23b,24a,24bにおいて、可動支持部50と固定支持部51との延出方向は逆方向である。そして、各検出領域23a,23b,24a,24bにおいて、複数本の可動支持部50と複数本の固定支持部51とがX1-X2方向に間隔を空けて交互に配列されている。
As shown in FIG. 1, the
図4に示すように各固定基部52は支持基板10と絶縁層12を介して固定されている。なお各固定支持部51と支持基板10との間に絶縁層12が介在していてもよいが、固定支持部51は細いためエッチングにより固定支持部51と支持基板10間の絶縁層12が除去されてしまい、前記固定支持部51は図4に示すように可動支持部50と同様、支持基板10から浮いた状態となっている。ただし、各固定支持部51は固定基部52に接続されているため、加速度を受けてもX1-X2方向へ移動しない。
As shown in FIG. 4, each fixed
図1に示すように、各可動支持部50のX1-X2方向の側部及び各固定支持部51のX1-X2方向の側部にはY1-Y2方向に間隔を空けて櫛歯状の可動電極子及び固定電極子が形成されている。可動電極子及び固定電極子を図2及び図3により説明する。
As shown in FIG. 1, the comb-like movable members are spaced apart in the Y1-Y2 direction from the side in the X1-X2 direction of each
図2(a)は図1に示す円で囲ったII辺りの第1検出領域23a及び第2検出領域24aを示している。図2(a)に示すように、第1検出領域23aでは、錘部22のY1側領域22bの内側部22b1からY2方向に向けて細長い可動支持部50が直線状で形成されている。そして第1検出領域23aでは、複数本の可動支持部50がX1-X2方向に間隔を空けて形成されている。同様に、第2検出領域24aでは、錘部22のY1側領域22bの内側部22b1からY2方向に向けて細長い可動支持部50が直線状で形成されている。そして第2検出領域24aでは、複数本の可動支持部50がX1-X2方向に間隔を空けて形成されている。
FIG. 2 (a) shows a
図2(a)に示すように、第1検出領域23aに設けられた可動支持部50のX2側端部50aからX2方向に延出する可動電極子60がY1-Y2方向に間隔を空けて複数本、形成されている。なお図2(a)では、前記可動支持部50に対して一本の可動電極子60にのみ符号を付した。
As shown in FIG. 2A,
また図2(a)に示すように、第2検出領域24aに設けられた可動支持部50のX1側端部50bからX1方向に延出する可動電極子61がY1-Y2方向に間隔を空けて複数本、形成されている。なお図2(a)では、前記可動支持部50に対して一本の可動電極子61にのみ符号を付した。図2(a)に示すように、可動電極子60,61のX1-X2方向への長さ寸法は、可動支持部50のY1-Y2方向への長さ寸法に比べて十分に短くなっている。
Further, as shown in FIG. 2A,
また図2(a)に示すように、各検出領域23a,24aでは、夫々、固定基部52からY1方向に向けて細長い固定支持部51が直線状で形成されている。図1,図3に示すように固定支持部51は、各検出領域23a,24aにて複数本、X1-X2方向に間隔を空けて形成されており、各固定支持部51は可動支持部50と交互に配列されている。
Further, as shown in FIG. 2A, in each of the
図2(a)に示すように、第1検出領域23aに設けられた固定支持部51のX1側端部51bからX1方向に延出する固定電極子62がY1-Y2方向に間隔を空けて複数本、形成されている。図2(a)に示すようにこれら固定電極子62は可動電極子60と間隔を空けてY1-Y2方向にて交互に配列されている。なお図2(a)では、前記固定支持部51に対して一本の固定電極子62にのみ符号を付した。
As shown in FIG. 2A, fixed
また図2(a)に示すように、第2検出領域24aに設けられた固定支持部51のX2側端部51aからX2方向に延出する固定電極子63がY1-Y2方向に間隔を空けて複数本、形成されている。図2(a)に示すようにこれら固定電極子63は可動電極子61と間隔を空けてY1-Y2方向にて交互に配列されている。なお図2(a)では、前記固定支持部51に対して一本の固定電極子63にのみ符号を付した。図2(a)に示すように、固定電極子62,63のX1-X2方向への長さ寸法は、固定支持部51のY1-Y2方向への長さ寸法に比べて十分に短くなっている。
Further, as shown in FIG. 2A, fixed
図2(a)では、図1に示すY1側の第1検出領域23a及びY1側の第2検出領域24aの電極構造を説明したが、Y2側の第1検出領域23b及びY2側の第2検出領域24bでの各電極構造は、中心Oを通りX1-X2方向に延びる線に対して図2(a)の電極構造と線対称の関係である。
In FIG. 2A, the electrode structure of the
図3(a)は図1に示す丸で囲ったIII辺りの電極構造を図示したものである。
図3(a)に示すように、同じ検出領域23a内では、X1-X2方向に交互に配列された各可動支持部50と各固定支持部51とが夫々一つずつ、組66にされて、各組66の可動支持部50と固定支持部51との間にて複数本の可動電極子60と複数本の固定電極子62とがY1-Y2方向に間隔を空けて交互に配列されている。
FIG. 3 (a) illustrates the electrode structure around circle III shown in FIG.
As shown in FIG. 3A, in the
図3(a)に示す静止状態(物理量の作用していない状態)において、可動支持部50のX2側端部50aから固定電極子62の先端62aまでのX1-X2方向への間隔はL1である。また可動電極子60及び固定電極子62のY1-Y2方向への幅寸法はT1である。図3(a)では代表的に可動電極子60の幅寸法をT1で示した。
In the stationary state (state in which no physical quantity is applied) shown in FIG. 3A, the distance from the X2-
また図3(a)に示す静止状態において、隣り合う組66の可動支持部50と固定支持部51との間におけるX1-X2方向への間隔をL3で示した。また図3(a)に示す静止状態において、可動電極子60と固定電極子62との重なり長さをL5とした。
Further, in the stationary state shown in FIG. 3A, an interval in the X1-X2 direction between the
また各可動電極子60は、Y1-Y2方向の両側に位置する固定電極子62,62の間の略中心に位置している。
Each
図3(b)に示すように、MEMSセンサSが加速度を受けて錘部がX2方向に移動すると、各可動支持部50もX2方向に移動し、各組66における、各可動電極子60と各固定電極子62との間の対向面積(Y1-Y2方向にて対面する面積)は図3(a)の静止状態よりも増す。このとき可動支持部50がX2方向へ移動した際の最大の移動可動距離をL2とし、図3(b)にて可動支持部50がL2、移動したとすれば、図3(a)の静止状態のときL1であった間隔は、L1-L2となる。また図3(a)の静止状態のときL3であった間隔はL3+L2となる。
As shown in FIG. 3B, when the MEMS sensor S receives acceleration and the weight moves in the X2 direction, each
また、図3(c)に示すように、MEMSセンサSが加速度を受けて錘部22がX1方向に移動すると、各可動支持部50もX1方向に移動し、各組66における、各可動電極子60と各固定電極子62との間の対向面積は図3(a)の静止状態よりも減少する。このとき可動支持部50がX1方向へ移動した際の最大の移動可動距離をL4とし、図3(b)にて可動支持部50がL4、移動したとすれば、図3(a)の静止状態のときL3であった間隔は、L3-L4となる。また図3(a)の静止状態のときL1であった間隔はL1+L4となる。
Further, as shown in FIG. 3C, when the MEMS sensor S receives acceleration and the
図3(a)、図3(b)、図3(c)に示した距離の変動関係は、図1に示すY2側の第1検出領域23bにおいても同じである。
The variation relationships of the distances shown in FIGS. 3A, 3B, and 3C are the same in the
一方、図3(b)に示すように、MEMSセンサSが加速度を受けて錘部がX2方向に移動すると、第1検出領域23a,23bでは図3(b)で説明したように、可動電極子60と固定電極子62間の対向面積が増加するが、第2検出領域24a,24bでは、可動電極子61と固定電極子63間の対向面積は減少する。これは図1,図2に示すように、第1検出領域23a,23bと、第2検出領域24a,24bとでは、可動電極子60,61と固定電極子62,63とのX1-X2方向への延出方向が逆にされているためである。
On the other hand, as shown in FIG. 3 (b), when the MEMS sensor S receives acceleration and the weight moves in the X2 direction, the movable electrodes in the
これにより、第1検出領域23a,23bで、可動電極子60と固定電極子62間の対向面積が増加して静電容量が大きくなると、第2検出領域24a,24bでは、可動電極子61と固定電極子63間の対向面積が減少して静電容量が小さくなる。一方、第1検出領域23a,23bで、可動電極子60と固定電極子62間の対向面積が減少して静電容量が小さくなると、第2検出領域24a,24bでは、可動電極子61と固定電極子63間の対向面積が増加して静電容量が大きくなる。
As a result, when the opposing area between the
なお、上記した錘部22及び可動電極部21a~21dの最大の移動可能距離L2,L4は、図1に示した各ギャップ28~31のX1-X2方向への大きさで規制される。
The maximum movable distances L2 and L4 of the
図1に図示しない枠体16は、図1に示した錘部22とは分離して前記錘部22の周囲を取り囲んでおり、図4に示すように枠体16は支持基板10に絶縁層12を介して固定されている。
The
図4に示すように、機能層11を構成する枠体16及び各固定基部52と配線基板15との間が金属接続部14により接続されている。図4では、配線基板15を単層構造で図示したが、実際にはシリコン基板の表面(機能層11との対向面側)に絶縁層が形成され、前記絶縁層の内部に配線層70が形成された構造である。配線層70は固定基部52と金属接続部14を介して電気的に接続されており、配線層70は枠体16よりも外側にてパッド部71に接続されている。
また図4では図示しないが、枠体16の外側にはグランドパッド等も形成されている。
As shown in FIG. 4, the
Further, although not shown in FIG. 4, a ground pad or the like is also formed on the outside of the
本実施形態では、第1検出部23より得られた静電容量変化と、第2検出部24より得られた静電容量変化とにより差動出力を得ることが可能である。そして差動出力に基づいて加速度の大きさや差動出力の符号(プラス値かマイナス値)から加速度の作用方向を知ることができる。
In the present embodiment, it is possible to obtain a differential output from the capacitance change obtained from the
(実験1;比較例における加速度と静電容量との関係、及び加速度と感度との関係について)
図1~図3に示す可動電極子60,61及び固定電極子62,63が形成されておらず、複数本の可動支持部50及び複数本の固定支持部51を櫛歯状の電極とする電極構造を比較例として実験を行った。比較例では、加速度を受けて錘部22がX1-X2方向に移動したときに、櫛歯状電極間のギャップ(距離)が変化することで静電容量変化を得ることが可能である(図17参照)。
(
The
なお以下の実験で示す比較例においても電極構造以外の構成は実施例と同じである。また、実施例及び比較例においても図1に示す検出部を同じ大きさとし、ただし比較例では実施例のように可動電極子60,61及び固定電極子62,63が無い分、櫛歯状の可動電極(実施例の可動支持部50に相当する部分)と固定電極(実施例の固定支持部51に相当する部分)との間の間隔を詰めて、電極の本数を増やした。比較例での静電容量変化の原理は、図17で説明した通りである。
In addition, also in the comparative example shown by the following experiment, structures other than an electrode structure are the same as an Example. Also in the embodiment and the comparative example, the detection portions shown in FIG. 1 have the same size, but in the comparative example, the
図5(a)は、比較例における加速度と静電容量との関係を示すシミュレーション結果である。図5(a)の実験では、図17に示すギャップa,bの大きさを1.7μmに設定した。ここで図5(a)に示す(1)のグラフは、プラス値の加速度が作用すると、可動電極と固定電極間のギャップが大きくなって静電容量が減少し、マイナス値の加速度が作用すると、可動電極と固定電極間のギャップが小さくなって静電容量が増大する検出部での静電容量変化を示している。一方、図5(a)に示す(2)のグラフは、マイナス値の加速度が作用すると、可動電極と固定電極間のギャップが大きくなって静電容量が減少し、プラス値の加速度が作用すると、可動電極と固定電極間のギャップが小さくなって静電容量が増大する検出部での静電容量変化を示している。ここで「プラス値」及び「マイナス値」とは、例えばプラス値の加速度をX1方向とすれば、マイナス値はその逆のX2方向である関係を指す。 FIG. 5A is a simulation result showing the relationship between the acceleration and the capacitance in the comparative example. In the experiment of FIG. 5A, the size of the gaps a and b shown in FIG. 17 is set to 1.7 μm. Here, in the graph (1) shown in FIG. 5A, when a positive acceleration is applied, the gap between the movable electrode and the fixed electrode is increased, the capacitance is decreased, and a negative acceleration is applied. The change in the electrostatic capacitance in the detection part which the gap between a movable electrode and a fixed electrode becomes small, and an electrostatic capacitance increases is shown. On the other hand, in the graph (2) shown in FIG. 5A, when a negative acceleration is applied, the gap between the movable electrode and the fixed electrode is increased, the capacitance is decreased, and a positive acceleration is applied. The change in the electrostatic capacitance in the detection part which the gap between a movable electrode and a fixed electrode becomes small, and an electrostatic capacitance increases is shown. Here, the “plus value” and the “minus value” indicate, for example, a relationship in which the minus value is the reverse X2 direction, assuming that the acceleration of the plus value is the X1 direction.
図5(b)は、MEMSセンサの検出部の大きさを変更することなく、図5(a)よりもバネ部40~43のバネ定数を小さくし、感度を高めた場合の加速度と静電容量との関係を示すシミュレーション結果である。図5(b)の実験では、図17に示すギャップa,bの大きさを1.7μmに設定した。図5(b)に示すように、静電容量変化は図5(a)に比べて急激になり、図5(b)における加速度の有効検出範囲(ダイナミックレンジ)r2は、図5(a)でのダイナミックレンジr1よりも狭くなることがわかった。
FIG. 5 (b) shows the acceleration and the electrostatics when the spring constant of the
図6は、図5(a)における(1)のグラフにおける静電容量変化と、(2)のグラフにおける静電容量変化とに基づく差動出力カーブを示す。図6に示すように加速度(絶対値)が大きくなるほど、静電容量(差動出力)の変化が大きくなることがわかった。 FIG. 6 shows a differential output curve based on the capacitance change in the graph of (1) in FIG. 5A and the capacitance change in the graph of (2). As shown in FIG. 6, it was found that as the acceleration (absolute value) increases, the change in capacitance (differential output) increases.
図7は、加速度と感度との関係を示すシミュレーション結果である。感度は図6に示す差動出力カーブの傾きで示される。図7に示すように感度曲線は加速度(絶対値)に対してフラットな直線状にならず、加速度(絶対値)が大きくなるほど大きく変化することがわかった。 FIG. 7 is a simulation result showing the relationship between acceleration and sensitivity. The sensitivity is indicated by the slope of the differential output curve shown in FIG. As shown in FIG. 7, it was found that the sensitivity curve did not become flat and linear with respect to the acceleration (absolute value), and the sensitivity curve changed more greatly as the acceleration (absolute value) became larger.
(実験2;実施例における加速度と静電容量との関係、及び加速度と感度との関係について)
図8は、実施例における加速度と静電容量との関係を示すシミュレーション結果である。図8の実験では、図3(a)に示すL1,L3を4~6μmの範囲内とし、また電極子の幅寸法T1を1.2μmに設定した。ここで図8に示す(3)のグラフは、プラス値の加速度が作用すると、可動電極子と固定電極子間の対向面積が小さくなって静電容量が減少し(図3(c)の状態)、マイナス値の加速度が作用すると、可動電極子と固定電極子間の対向面積が大きくなって静電容量が増大する(図3(b)の状態)検出部での静電容量変化を示している。一方、図8に示す(4)のグラフは、マイナス値の加速度が作用すると、可動電極子と固定電極子間の対向面積が小さくなって静電容量が減少し、プラス値の加速度が作用すると、可動電極子と固定電極子間の対向面積が大きくなって静電容量が増大する検出部での静電容量変化を示している。ここで「プラス値」及び「マイナス値」とは、例えばプラス値の加速度をX1方向とすれば、マイナス値はその逆のX2方向である関係を指す。
(
FIG. 8 is a simulation result showing the relationship between the acceleration and the capacitance in the example. In the experiment of FIG. 8, L1 and L3 shown in FIG. 3A were set in the range of 4 to 6 μm, and the width dimension T1 of the electrode was set to 1.2 μm. Here, in the graph of (3) shown in FIG. 8, when an acceleration with a positive value acts, the opposing area between the movable electrode and the fixed electrode decreases and the capacitance decreases (the state of FIG. 3 (c)) When a negative acceleration is applied, the opposing area between the movable electrode and the fixed electrode increases and the capacitance increases (state in FIG. 3B). ing. On the other hand, in the graph of (4) shown in FIG. 8, when an acceleration with a negative value acts, the opposing area between the movable electrode and the fixed electrode decreases, the capacitance decreases, and an acceleration with a positive value acts. The electrostatic capacitance change in the detection part which the opposing area between a movable electrode element and a fixed electrode element becomes large, and an electrostatic capacitance increases is shown. Here, the “plus value” and the “minus value” indicate, for example, a relationship in which the minus value is the reverse X2 direction, assuming that the acceleration of the plus value is the X1 direction.
図9は、図8における(3)のグラフに示す静電容量変化と、(4)のグラフに示す静電容量変化とに基づく差動出力カーブを示す。また図10は、実施例における加速度と感度との関係を示すシミュレーション結果である。感度は図9に示す差動出力カーブの傾きで示される。 FIG. 9 shows a differential output curve based on the capacitance change shown in the graph (3) in FIG. 8 and the capacitance change shown in the graph (4). Moreover, FIG. 10 is a simulation result which shows the relationship between the acceleration and the sensitivity in an Example. The sensitivity is indicated by the slope of the differential output curve shown in FIG.
実施例では図9に示すように、差動出力カーブは加速度(絶対値)に対して直線状に傾き(一次曲線)、また図10に示すように感度が加速度(絶対値)に対して略フラットになることがわかった。 In the embodiment, as shown in FIG. 9, the differential output curve is linearly inclined with respect to the acceleration (absolute value) (linear curve), and as shown in FIG. 10, the sensitivity is substantially equal to the acceleration (absolute value). It turned out to be flat.
図7の比較例での感度と図10の実施例での感度を比較すると、図10の感度は、図7に示す感度曲線の底部での感度に比べて大きくなることがわかった。 Comparing the sensitivity in the comparative example of FIG. 7 with the sensitivity in the example of FIG. 10, it was found that the sensitivity of FIG. 10 is larger than the sensitivity at the bottom of the sensitivity curve shown in FIG.
従って、比較例では実施例と同等の感度を加速度の小さい領域の部分で得ようとすると、例えば、櫛歯状の電極の数を増加させて電極どうしの対向面積を大きくしなくてはならず、大型化してしまうことがわかる。実施例では、比較例に比べてMEMSセンサの高い感度を維持したうえで、加速度の有効検出範囲(ダイナミックレンジ)を広げることができるとともに、有効検出範囲内での感度のリニアリティを向上させることができるとわかった。 Therefore, in the comparative example, if it is intended to obtain the same sensitivity as that of the example in the area with a small acceleration, for example, the number of comb-teeth electrodes must be increased to increase the opposing area of the electrodes. It can be seen that the size will increase. In the embodiment, while maintaining high sensitivity of the MEMS sensor as compared with the comparative example, it is possible to widen the effective detection range (dynamic range) of acceleration and to improve the linearity of the sensitivity within the effective detection range. I knew I could.
(実験3;図3(a)に示すL1の適正化の実験について)
次に、図3(a)に示す電極子の幅寸法T1を1.2μm、0.8μmあるいは1.6μmとし、図3(a)でのL3を5μmに固定した。
(
Next, the width dimension T1 of the electrode shown in FIG. 3A was set to 1.2 μm, 0.8 μm or 1.6 μm, and L3 in FIG. 3A was fixed at 5 μm.
また図3(b)のように、各可動電極子60が組となる固定支持部51に近づいたときの可動支持部50の最大の移動可能距離L2を2μmとした。2μmは、100Gの加速度(絶対値)が作用した場合に該当する。
Further, as shown in FIG. 3B, the maximum movable distance L2 of the
図11に示すように、L1を約3μm以上として、図3(a)での静止状態での感度(静止時)を測定し、さらに、可動支持部50が2μm、固定支持部51の方向へ移動したときの感度(100G(絶対値))を測定した。そして、[感度(100G(絶対値))/感度(静止時)]×100(%)を図11の縦軸の最大振れ幅とした。
As shown in FIG. 11, L1 is about 3 μm or more, the sensitivity (at rest) in the stationary state in FIG. 3A is measured, and the
図11に示すように、L1が小さくなるほど、感度の最大振れ幅が大きくなることがわかった。感度の最大振れ幅は小さいほどよい。実用化には最大振れ幅(絶対値)を10%以下に設定することが好適である。感度の最大振れ幅を10%以下に設定するにはL1を約3.6μm以上とすることが好ましいとわかった。このようにL1が小さくなることで感度の最大振れ幅が大きくなるのは、可動電極子と固定電極子との間の対向面積の変動のみならず、前記対向面積以外の部分の変動も加わって静電容量が変化しやすくなるためである。 As shown in FIG. 11, it was found that the maximum fluctuation range of the sensitivity increases as L1 decreases. The smaller the maximum swing of the sensitivity, the better. For practical use, it is preferable to set the maximum swing (absolute value) to 10% or less. It was found that it is preferable to set L1 to about 3.6 μm or more in order to set the maximum fluctuation range of the sensitivity to 10% or less. As described above, the fact that the maximum swing width of sensitivity is increased due to the decrease in L1 is not only the change in the facing area between the movable electrode and the fixed electrode, but also the change in portions other than the facing area. This is because the capacitance is easily changed.
図12は、図3(b)に示すL1-L2(L2は2μm)と感度の最大振れ幅との関係を示したものである。図12に示すように、L1-L2を約1.6μm以上とすることで感度の最大振れ幅(絶対値)を10%以下に抑えることができるとわかった。 FIG. 12 shows the relationship between L1-L2 (L2 is 2 μm) shown in FIG. 3B and the maximum swing of the sensitivity. As shown in FIG. 12, it was found that the maximum fluctuation width (absolute value) of the sensitivity can be suppressed to 10% or less by setting L1-L2 to approximately 1.6 μm or more.
続いて(L1-L2)2/T1を計算し、(L1-L2)2/T1と感度の最大振れ幅との関係を示したのが図13である。
Subsequently, (
図13に示すように、(L1-L2)2/T1は、電極子の幅寸法T1の大きさに係らず、ほぼ同じ曲線となることがわかった(規格化)。そして図13に示すように、(L1-L2)2/T1を2(μm)以上とすることで感度の最大振れ幅(絶対値)を10%以内に抑えることができるとわかった。
As shown in FIG. 13, it was found that (
(実験4;図3(a)に示すL3の適正化の実験について)
次に、図3(a)に示す電極子の幅寸法T1を1.2μmとし、図3(a)(静止時)でのL1を5μmに固定した。そして図3(c)のように、各可動電極子60が隣の組の固定支持部51に近づいたときの可動支持部50の最大の移動可能距離L4を2μmとした。2μmは、100G(絶対値)の加速度が作用した場合に該当する。図14に示すように、L3を約3μm以上として、図3(a)での静止状態での感度(静止時)を測定し、さらに上記したように、可動支持部50が2μm、隣の組の固定支持部51の方向へ移動したときの感度(100G)を測定した。そして、[感度(100G(絶対値))/感度(静止時)]×100(%)を図14の縦軸の最大振れ幅とした。その実験結果が図14に示す(5)のグラフである。
(
Next, the width dimension T1 of the electrode shown in FIG. 3A was 1.2 μm, and L1 in FIG. 3A (at rest) was fixed at 5 μm. Then, as shown in FIG. 3C, the maximum movable distance L4 of the
さらに、図3(a)に示す電極子の幅寸法T1を1.2μmとし、図3(a)(静止時)でのL1をL3と連動させた実験も行った。すなわち、L3を4μmとすればL1も4μmに設定した。そして上記の(5)のグラフでの実験と同様に、各可動電極子60が隣の組の固定支持部51に近づいたときの可動支持部50の最大の移動可能距離L4を2μm(100G(絶対値)の加速度作用時)として、[感度(100G(絶対値))/感度(静止時)]×100(%)を測定した。その実験結果が図14に示す(6)のグラフである。
Furthermore, an experiment was also conducted in which the width dimension T1 of the electrode shown in FIG. 3A was 1.2 μm, and L1 in FIG. 3A (at rest) was interlocked with L3. That is, when L3 is 4 μm, L1 is also set to 4 μm. Then, as in the experiment of the graph of (5) above, the maximum movable distance L4 of the
図14に示すように、感度の最大振れ幅(絶対値)を10%以下に設定するにはL3を約3.8μm以上とすることが好ましいとわかった。 As shown in FIG. 14, in order to set the maximum amplitude (absolute value) of the sensitivity to 10% or less, it was found that it is preferable to set L3 to about 3.8 μm or more.
図15は、図3(c)に示すL3-L4(L4は2μm)と感度の最大振れ幅との関係を示したものである。なお図15に示す(5)のグラフは、図14の(5)のグラフに基づくものであり、図15に示す(6)のグラフは、図14の(6)のグラフに基づくものである。また図15では、L1とL3とを連動させるとともに、電極子の幅寸法T1を0.8μmとした実験((7)のグラフ)、及び、L1とL3とを連動させるとともに、電極子の幅寸法T1を1.6μmとした実験((8)のグラフ)も行った。 FIG. 15 shows the relationship between L3-L4 (L4 is 2 μm) shown in FIG. 3C and the maximum swing of the sensitivity. The graph of (5) shown in FIG. 15 is based on the graph of (5) of FIG. 14, and the graph of (6) shown in FIG. 15 is based on the graph of (6) of FIG. . In FIG. 15, L1 and L3 are interlocked with each other, the experiment (graph (7)) in which the width dimension T1 of the electrode is 0.8 μm, and L1 and L3 are interlocked with each other, and the width of the electrode is The experiment (the graph of (8)) which set dimension T1 to 1.6 micrometers was also conducted.
図15に示すように、L3-L4(L4=2μm)を約1.8μm以上とすることで感度の最大振れ幅(絶対値)を10%以下に抑えることができるとわかった。 As shown in FIG. 15, it was found that the maximum swing width (absolute value) of the sensitivity can be suppressed to 10% or less by setting L3-L4 (L4 = 2 μm) to approximately 1.8 μm or more.
続いて(L1-L2)2×T1を計算し、(L3-L4)2×T1と感度の最大振れ幅との関係を示したのが図16である。なお図16に示す3つの曲線は、図15に示す(6)(7)(8)のグラフに基づくものである。 Subsequently, (L1−L2) 2 × T1 is calculated, and FIG. 16 shows the relationship between (L3−L4) 2 × T1 and the maximum amplitude of the sensitivity. Three curves shown in FIG. 16 are based on the graphs of (6), (7) and (8) shown in FIG.
図16に示すように、(L3-L4)2×T1は、電極子の幅寸法T1の大きさに係らず、ほぼ同じ曲線となることがわかった(規格化)。そして図16に示すように、(L3-L4)2×T1を4(μm3)以上とすることで感度の最大振れ幅(絶対値)を10%以内に抑えることができるとわかった。 As shown in FIG. 16, it was found that (L3−L4) 2 × T1 has substantially the same curve regardless of the size of the width dimension T1 of the electrode element (normalization). Then, as shown in FIG. 16, it was found that by setting (L3−L4) 2 × T1 to 4 (μm 3 ) or more, the maximum amplitude (absolute value) of the sensitivity can be suppressed to 10% or less.
L1とL3とを連動させない場合には、図3(a)の静止時においてL3>L1とすることが好適である。図11に示す実験では感度の最大振れ幅が10(%)となるときのL1は約3.6μmである。このときL3は5μmである。一方、図14の実験では、(5)のグラフに示すように、感度の最大振れ幅が10(%)となるときのL3は約4.4μmである。このときL1は5μmである。このように静止時のL1とL3との寸法関係をみると、L3>L1とした図11での実験のほうが、小さいほうの寸法(L1)をより小さく設定できる。したがって高い感度及び良好なリニアリティを維持しつつMEMSセンサの小型化を促進することができる。 When L1 and L3 are not interlocked with each other, it is preferable to set L3> L1 in the stationary state of FIG. 3 (a). In the experiment shown in FIG. 11, L1 is about 3.6 μm when the maximum fluctuation range of the sensitivity is 10 (%). At this time, L3 is 5 μm. On the other hand, in the experiment of FIG. 14, as shown in the graph of (5), L3 when the maximum swing of the sensitivity is 10 (%) is about 4.4 μm. At this time, L1 is 5 μm. As seen from the dimensional relationship between L1 and L3 at rest, the smaller dimension (L1) can be set smaller in the experiment of FIG. 11 where L3> L1. Therefore, miniaturization of the MEMS sensor can be promoted while maintaining high sensitivity and good linearity.
また図3においてL5はL2及びL4以上である。これにより、図3(b)(c)のように可動電極子が最大限、X1-X2方向に移動しても、可動電極子が固定電極子の外側に外れず、感度のリニアリティの低下を抑制できる。 In FIG. 3, L5 is greater than or equal to L2 and L4. As a result, even if the movable electrode moves as much as possible in the X1-X2 direction as shown in FIGS. 3 (b) and 3 (c), the movable electrode does not come out of the fixed electrode, and the sensitivity linearity decreases. It can be suppressed.
本実施形態におけるMEMSセンサSは、同じ検出部内に、可動電極部21a~21dを構成する複数本の可動支持部50と、固定電極部20a~20dを構成する複数本の固定支持部51とをX1-X2方向(第1の方向)に交互に配列している。そして、隣り合う可動支持部50と固定支持部51とを同じ組66にし、各組66での可動支持部50と固定支持部51との間に、複数本の可動電極子60,61と固定電極子62,63とをY1-Y2方向(第2の方向)に交互に配列した。これにより検出部内に効率よく、多数の可動電極子60,61と固定電極子62,63を配置でき、従来の電極構造に比べて、小型で且つ、高い感度を得ることが出来る。各特許文献に示す電極構造は、可動電極と固定電極間の対向面積の変動に基づき静電容量変化を得るものであるが、同じ検出部内に一組の可動電極と固定電極しか設けられていない。すなわち特許文献に記載された電極構造は、本実施形態のように、複数本の可動支持部50と複数本の固定支持部51とがX1-X2方向に間隔を空けて交互に配列されたものでない。そして本実施形態のように可動支持部50と固定支持部51が複数組に区分けされ、各組にて、可動電極子60,61と固定電極子62,63とがY1-Y2方向に間隔を空けて交互に配列された電極構造は開示されていない。
The MEMS sensor S in the present embodiment includes a plurality of
本実施形態の電極構造とすることで、特許文献に開示された電極構造に比べて、同じ大きさの検出領域内に、可動電極子60,61と固定電極子62,63間の対向面積の変動領域を効果的に増やすことができ、感度を高めることが可能になる。
By using the electrode structure of this embodiment, compared with the electrode structure disclosed in the patent document, in the detection area of the same size, the opposing area between the
また、可動電極と固定電極間のギャップ(距離)を変動させて静電容量変化を生じさせる方式では、静電容量はギャップ(距離)に反比例し、図5ないし図7に示したように、感度を高めると、距離の変動に対して静電容量変化が急激なものとなり(図5(b)参照)、MEMSセンサによる物理量の有効検出範囲(ダイナミックレンジ)が狭くなる。さらに有効検出範囲内での感度のリニアリティを向上させることができないといった問題も生じる(図7参照)。 Further, in the method of changing the gap (distance) between the movable electrode and the fixed electrode to generate the capacitance change, the capacitance is inversely proportional to the gap (distance), as shown in FIG. 5 to FIG. When the sensitivity is increased, the electrostatic capacitance changes rapidly with respect to the distance fluctuation (see FIG. 5B), and the effective detection range (dynamic range) of the physical quantity by the MEMS sensor becomes narrow. Furthermore, there also arises a problem that the linearity of sensitivity within the effective detection range can not be improved (see FIG. 7).
これに対して本実施形態のように可動電極子60,61と固定電極子62,63間の対向面積を変動させて静電容量を変化させる方式では、静電容量を対向面積に比例させることができ、上記した距離の変動で静電容量を変化させる比較例の方式に比べて、物理量の有効検出範囲(ダイナミックレンジ)を広くできるとともに前記有効検出範囲内での感度のリニアリティを向上させることが可能になる。
On the other hand, in the method of changing the electrostatic capacitance by changing the facing area between the
また本実施形態では、上記の実験で示したように、(L1-L2)2/T1を2(μm)以上とし、また(L3-L4)2×T1を4(μm3)以上に設定することで、効果的に、感度のリニアリティを向上させることが可能である。 In the present embodiment, as described in the above experiment, (L1-L2) 2 / T1 is set to 2 (μm) or more, and (L3-L4) 2 × T1 is set to 4 (μm 3 ) or more. Thus, it is possible to effectively improve the linearity of sensitivity.
また図1に示すように第1検出部23を複数の検出領域23a,23bに分け、第2検出部24を複数の検出領域24a,24bに分け、各検出領域23a,23b,24a,24bに夫々、可動電極部21a~21d及び固定電極部20a~20dを設けることで、本実施形態の可動支持部50及び固定支持部51を極端に長く形成しなくてもよくなり、各電極部の強度を十分に保ったうえで、感度の向上を図ることができる。
As shown in FIG. 1, the
図1はX1-X2方向に作用する加速度を検出するためのMEMSセンサであったが、図1の状態から90度回転させればY1-Y2方向に作用する加速度を検出するためのMEMSセンサにできる。また、図1に示すX軸方向の加速度を検出するMEMSセンサと、図1のMEMSセンサを90度回転させたY軸方向の加速度を検出するMEMSセンサとを組み合わせて2軸の加速度検出センサにすることも可能である。 FIG. 1 shows a MEMS sensor for detecting an acceleration acting in the X1-X2 direction, but if rotated 90 degrees from the state of FIG. 1, a MEMS sensor for detecting an acceleration acting in the Y1-Y2 direction it can. In addition, a MEMS sensor for detecting acceleration in the X-axis direction shown in FIG. 1 and a MEMS sensor for detecting acceleration in the Y-axis direction obtained by rotating the MEMS sensor of FIG. It is also possible.
本実施形態は加速度センサのみならず角速度センサ、衝撃センサ等、物理量センサ全般に適用可能である。 The present embodiment is applicable not only to acceleration sensors but also to physical quantity sensors in general, such as angular velocity sensors and impact sensors.
S MEMSセンサ
10 支持基板
11 機能層
12 絶縁層
13 SOI基板
14 金属接続部
15 配線基板
16 枠体
20a~20d 固定電極部
21a~21d 可動電極部
22 錘部
23 第1検出部
23a、23b 第1検出領域
24 第2検出部
24a、24b 第2検出領域
26、27 アンカ部
28~31 ギャップ
40~43 バネ部
50 可動支持部
51 固定支持部
52 固定基部
60、61 可動電極子
62、63 固定電極子
66 組
70 配線層
Claims (5)
水平面内にて直交する2方向を第1の方向と第2の方向としたとき、前記第1の方向が前記可動電極部の移動方向であり、
前記可動電極部は、前記第1の方向に間隔を空けて配置され前記第2の方向に延出して形成された複数本の可動支持部と、前記第1の方向に向けて各可動支持部の側部から延出し、各可動支持部にて前記第2の方向に間隔を空けて配置された複数本の可動電極子と、を有し、
前記固定電極部は、前記第1の方向に間隔を空けて配置され基端側から先端側への延出方向が前記可動支持部とは逆方向である複数本の固定支持部と、各固定支持部の側部から前記可動電極子の延出方向とは逆方向に延出し、各固定支持部にて前記第2の方向に間隔を空けて配置された複数本の固定電極子と、を有し、
複数本の前記可動支持部と複数本の前記固定支持部とが前記第1の方向に間隔を空けて交互に配列されており、隣り合う前記可動支持部と前記固定支持部とが組にされて、各組の前記可動支持部と前記固定支持部の間にて複数本の前記可動電極子と複数本の前記固定電極子とが前記第2の方向に間隔を空けて交互に配列されており、
前記可動電極部の前記第1の方向への移動により、各可動電極子と各固定電極子間の対向面積の変化に基づく静電容量変化を検出することを特徴とするMEMSセンサ。 In a MEMS sensor having a movable electrode portion and a fixed electrode portion,
When two directions orthogonal to each other in a horizontal plane are a first direction and a second direction, the first direction is a moving direction of the movable electrode portion,
The movable electrode portions are arranged at intervals in the first direction, and extend in the second direction, and a plurality of movable support portions are formed, and each movable support portion in the first direction A plurality of movable electrode elements extending from the side portion of the second support and spaced apart in the second direction at each movable support portion,
The fixed electrode portion is arranged at intervals in the first direction, and a plurality of fixed support portions whose extension direction from the proximal end side to the distal end side is opposite to the movable support portion, and each fixed A plurality of fixed electrodes which extend from the side of the support in a direction opposite to the extending direction of the movable electrode and are spaced apart from each other in the second direction by each fixed support; Have
A plurality of the movable support portions and a plurality of the fixed support portions are alternately arranged at intervals in the first direction, and the adjacent movable support portions and the fixed support portions are combined. The plurality of movable electrode elements and the plurality of fixed electrode elements are alternately arranged at intervals in the second direction between the movable support portion and the fixed support portion of each set. Yes,
A MEMS sensor characterized by detecting a change in electrostatic capacity based on a change in an opposing area between each movable electrode and each fixed electrode by moving the movable electrode portion in the first direction.
前記可動電極子と前記固定電極子との前記第1の方向への延出方向が、前記第1検出部と前記第2検出部とで逆にされており、前記第1検出部により得られた静電容量変化と、前記第2検出部により得られた静電容量変化により差動出力を得ることができる請求項1記載のMEMSセンサ。 A first detection unit and a second detection unit, wherein each of the detection units includes the movable electrode unit and the fixed electrode unit;
The extending directions of the movable electrode element and the fixed electrode element in the first direction are reversed between the first detection unit and the second detection unit, and are obtained by the first detection unit. The MEMS sensor according to claim 1, wherein a differential output can be obtained by the capacitance change and the capacitance change obtained by the second detection unit.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113016132A (en) * | 2018-11-16 | 2021-06-22 | 国立大学法人东京大学 | Vibration power generation element |
| CN116068222A (en) * | 2021-10-29 | 2023-05-05 | 精工爱普生株式会社 | Physical quantity sensor and inertial measurement device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0989927A (en) * | 1995-09-28 | 1997-04-04 | Zexel Corp | Multi-axial acceleration sensor |
| JP2010513888A (en) * | 2006-12-19 | 2010-04-30 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Accelerometer with comb-like electrode |
-
2012
- 2012-02-15 WO PCT/JP2012/053473 patent/WO2012160845A1/en not_active Ceased
- 2012-05-21 JP JP2012115792A patent/JP2013007743A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0989927A (en) * | 1995-09-28 | 1997-04-04 | Zexel Corp | Multi-axial acceleration sensor |
| JP2010513888A (en) * | 2006-12-19 | 2010-04-30 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Accelerometer with comb-like electrode |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113016132A (en) * | 2018-11-16 | 2021-06-22 | 国立大学法人东京大学 | Vibration power generation element |
| CN116068222A (en) * | 2021-10-29 | 2023-05-05 | 精工爱普生株式会社 | Physical quantity sensor and inertial measurement device |
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