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WO2012020274A1 - Procédé et appareil pour texturiser un substrat à semi-conducteur plat - Google Patents

Procédé et appareil pour texturiser un substrat à semi-conducteur plat Download PDF

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Publication number
WO2012020274A1
WO2012020274A1 PCT/IB2010/001980 IB2010001980W WO2012020274A1 WO 2012020274 A1 WO2012020274 A1 WO 2012020274A1 IB 2010001980 W IB2010001980 W IB 2010001980W WO 2012020274 A1 WO2012020274 A1 WO 2012020274A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor substrate
solution
texturization
top side
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2010/001980
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English (en)
Inventor
Eckhardt Wefringhaus
Steffen Queisser
Denise Nagel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rena GmbH
Original Assignee
Rena GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rena GmbH filed Critical Rena GmbH
Priority to PCT/IB2010/001980 priority Critical patent/WO2012020274A1/fr
Priority to TW099127725A priority patent/TW201207928A/zh
Publication of WO2012020274A1 publication Critical patent/WO2012020274A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H10P72/0426—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H10P72/0424—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a process for texturizing a flat semiconductor substrate according to the preamble of claim 1 and to an apparatus for carrying out this process.
  • flat semiconductor substrates like silicon wafers have been texturized on an industrial scale by immersing the substrate completely into a texturization solution, as it is described for example in WO 2004/100244 Al .
  • both sides of the flat substrate are etched and in this way textur ⁇ ized roughly to the same extent. For that reason, it is some ⁇ times, referred to this kind of texturization as symmetrical texturization .
  • said additional handling steps might result in an increased rate of breakage of the semiconductor substrates.
  • said methods are not used on an industrial scale .
  • WO 2005/093788 Al discloses a method for the treatment of substrate surfaces, according to which an underside of a silicon wafer is .lowered into a solution and horizontally transported through the solution, whereas a top side of the silicon wafer -is not covered by the solution.
  • a texturization solution in order to provide an asymmetrically texturized substrate.
  • the substrate, or wafer respectively and_ particularly an as-cut-wafer is deformed, so that it shows a bow.
  • Such a bow increases the rate of substrate breakage during subsequent processing steps like, for example, cleaning or handling steps.
  • the described bow of the substrate or wafer can cause undesirable inhomogeneities in several processing steps like, for example, cleaning steps.
  • the present invention is based on the problem to provide a low-complexity process for asymmetrically texturizing a flat semiconductor substrate that at least partly avoids a bow of the semiconductor substrate.
  • the present invention is based on the problem to provide an apparatus for carrying out the process according to the invention.
  • the process according to the invention is based on the concept of arranging the semiconductor substrate in such a way that an underside to be texturized is being orientated facing down and contact from below by a texturization solution during a tex- ' turization time and providing an etching solution on a top side of the semiconductor substrate in order to etch off semiconductor material from the top side of the semiconductor substrate during an etching time.
  • the etching solution and the etching time are chosen such that less semiconductor material is etched of from the top side than from the underside of the semiconductor substrate.
  • underside and top side of the semiconductor substrate mean those sides of the flat semiconductor substrate, which have the largest areas.
  • the underside of the semiconductor substrate, which is orientated facing down, is the one that shall be texturized.
  • that underside usually corresponds to a front side of the solar cell.
  • Texturization time starts when the underside ' of the substrate is brought into contact with the texturization solution and ends when this contact is disrupted, for example due to removal of the texturization solution from the underside of the substrate by rinsing the substrate in " water.
  • Etching- time starts when the top side of the substrate gets into contact with the etching solution and ends when this contact is disrupted, for example by removal of the etching solution from the top side of the substrate.
  • the process according to the invention is a wet chemical process and therefore less elaborate than plasma processes or dicing processes. Furthermore, it can be easily integrated " into widely used industrial inline production processes. Well known texturization solutions that have been used so far for symmetrical texturization of substrates can also be used for the process according to the invention. It has turned out that a bending of the semiconductor substrate can be avoided by etching off semiconductor material from the top side although less material is etched of from the topside than from the underside of the semiconductor substrate. Therefore, the process according to the invention makes it possible, to provide asymmetrically texturized semiconductor substrates without bow.
  • the semiconductor substrate is arranged at the surface of the texturization solution such that the texturization solution is prevented from contacting the top side of the semi- conductor substrate.
  • WO 2005/093788 Al illustrates how this might be realized.
  • the substrate not necessarily needs to be arranged at the surface of the texturization solution in the described way during all of the texturization time.
  • the etching solution is provided on the top side of the semiconductor substrate by temporarily arranging said top side below the surface of the texturization solution during a part of the etching time.
  • the top side is below the surface, if the substrate is arranged in the texturization solution such that the top side is completely wetted by the texturization solution. This can for example be realized by dipping the substrate completely into the texturization solution. In this embodiment the texturiza- ' tion solution is simultaneously used as etching solution.
  • the etching solution is sprayed onto the top side the semiconductor substrate.
  • etching solutions different from the texturization solution can comfortably be arranged on the top side of the semiconductor substrate.
  • Such etching solutions can therefore be easily adapted to the required etching time and the amount of semiconductor material that shall be etched off during the etching time.
  • the etching solution can be of the same kind as the texturiza tion solution. Compositions of these solutions might be the same or differ.
  • a diluted texturization solu- tion might be used as etching solution. Solutions containing HF, HN0 3 and H 2 0, for example, can be used as texturization so lutions .
  • etching time can start after the end of the tex turization time or texturization time can begin after the end of the etching time.
  • the etching solution is removed from the top side o the semiconductor substrate by the end of the etching time, preferably by blowing it off said top side of the semiconductor substrate.
  • etching of the top side can be com ⁇ fortably stopped at a suitable point of time, particularly be ⁇ fore the end of the texturization time, i.e. when the underside of the semiconductor substrate is still contacted by the texturization solution.
  • Blowing off the etching solution can in principle be realized by means of any known blow off device, particularly by means of one or more so called air knives, whereas the used gas not necessarily needs to be air. Also other gases or gas mixtures can be used.
  • the etching solution is provided on the top side of the semiconductor substrate within a first half of the tex- turization time, preferably within a first fifth of the texturization time, and removed from said top side before the end of the texturization time.
  • semiconductor material is etched off from the top side of the semiconductor substrate quite shortly after beginning of the texturization time, so that bending of the semiconductor substrate, in short referred to as substrate, during the texturization time can be avoided. Consequently, the substrates have no bow during the- texturization time and can be homogeneously texturized.
  • the etching solution is provided on the top side of the semiconductor substrate at the beginning of the texturization time, so that etching and texturization time begin simultaneously.
  • Removal of the etching solution can, for example, be realized by blowing it off the top side as described above.
  • the etching solution is removed within the first half of the texturization time, preferably within' the first fifth of the texturization time.
  • the etching solution can in principle also remain on the top side of the substrate until the end of the texturization time.
  • the usage of an etching solution that differs from the texturization solution increases complexity of the process and might cause, contamination of the texturization solution by etching solution sprayed in or blown into the texturization solution. If the etching rate of the etching solution decreases during the etching time, e. g. because the etching solution is depleted during the etching time, the same kind of solution might be used as .
  • the etching solution is provided on the top side of the semiconductor substrate before the end of the texturization time and removed together with the texturization solution at the end of the texturization time.
  • the etching solution is provided on the top side of the substrate within the last half of the texturization time, and especially preferred it is provided within 'the last fifth of the texturization time. Simultaneous removal of etching solution and texturization solution is preferably realized by rinsing the semiconductor substrate in water.
  • the semiconductor substrate is transported horizontally through a basin filled with texturization solution during the texturization time.
  • a filled basin shall not be understood in such that the basin necessarily needs to be completely filled, although this might be the case.
  • the top side of the semiconductor substrate is single side etched in a chemical polishing solution after expiration of the etching time and the texturization time.
  • a chemical polishing solution after expiration of the etching time and the texturization time.
  • the semiconductor substrate is arranged in such a way that an underside is being orientated facing down and contacted from below, by an etching solution during an etching time.
  • a texturization solution is provided on a top side of the semiconductor substrate . in order to texturize the top side of the semiconductor substrate during a texturization time.
  • the etching solution and the etching time are chosen such that less semiconductor material is etched off from the underside than from the top side of the semiconductor substrate.
  • the top side of the semiconductor substrate corresponds to a front " side of the solar cell.
  • the texturization time starts when the top side of the substrate is brought into contact ' with the texturization solution and ends when this contact is disrupted.
  • Etching time starts when the under ⁇ side of the substrate gets into contact with the etching solu ⁇ tion and ends when this contact is disrupted.
  • the semiconductor substrate is arranged at a surface of the etching solution such that the etching solution is prevented from contacting the top side of the semiconductor substrate.
  • WO 2005/093788 Al illustrates how this might be realized.
  • the substrate not necessarily needs to be arranged at the surface of the etching, solution in the described way during all of the etching time.
  • a texturization solution is used as etching solution.
  • the texturization solution is then provided on the top side of the semiconductor substrate by temporarily arranging said top side below the surface of the etching solu ⁇ tion during a part of the texturization time.
  • the top side is below the surface, if the substrate is arranged in the etching solution such that the top side is completely wetted by the etching solution.
  • the texturization solution is sprayed onto the top side of the semiconductor substrate.
  • texturization solutions different from the etching solution can comfortably be arranged on the top side of the semiconductor substrate.
  • the etching solution can be of the same kind as the texturization solution. Compositions of these solutions might be the same or differ.
  • etching time can in principle start after the end of the texturization time or texturization time can begin after the end of the etching time.
  • the texturization solution is removed from the top side of the* semiconductor substrate by .the end of the etching time, preferably again by blowing it off said top side of the semiconductor substrate.
  • blowing off the texturization solution can in principle be realized by means of any known blow off device, particularly by means of one or more air knives, whereas the used gas not necessarily needs to be air. Also other gases or gas mixtures can be used.
  • the texturization solution is provided on the top side of the semiconductor substrate within a first half of the etching time, preferably within a first fifth of the etching time.
  • the texturization solution is provided on the top side of the semiconductor substrate at the beginning of the etching time, so that etching and , texturization time begin . simultaneously. In doing so, the substrates have no bow during the tex- turization time and can be homogeneously texturized.
  • the texturization solution is preferably removed from the top side before the end of the etching time.
  • the texturization solution is provided on the top side of the semiconductor substrate before the beginning of the etching time and removed together with the etching solution at . the end of the etching time.
  • Simultaneous removal of etching solution and texturization solution is preferably realized by rinsing the . semiconductor substrate in water.
  • complexity of the process can be further reduced, as no separate step for removal of the texturization solution is required.
  • the substrates might become deformed during the texturization time before the etching solution is brought into contact with the underside of the substrate. After the etching solution is brought into contact with said underside and a sufficient amount of semiconductor material is etched off from said underside, the possibly previously formed bow diminishes again. But the bow existing temporarily during the texturization time might in certain cases already have caused an inhomogeneous texturization on the top side of the substrate.
  • the semiconductor substrate is transported horizontally through a ' basin filled with etching solution during the etching time.
  • the underside of the semiconductor substrate is single side etched in a chemical polishing solution after expiration of the etching time and the texturization time.
  • An apparatus comprises a basin filled with a first etching solution, a bearing device for arranging a semiconductor substrate such that ' an underside of the semiconductor substrate is orientated facing down and contacted from below by the first etching solution. Furthermore, it comprises a spraying device for spraying a second etching solution onto a top side of the ' semiconductor substrate.
  • a '" filled basin does not necessarily mean that the basin is completely filled with the first etching solution.
  • a partly filled basin is, in principle, sufficient.
  • a texturization solu- tion is provided as . first etching solution.
  • first etching solution is provided as second etching solution.
  • second etching solution is provided as second etching solution.
  • the same kind of texturization solution is provided as first etching solution and as second etching solu- ⁇ tion.
  • second etching solu- ⁇ tion is provided as first etching solution and as second etching solution.
  • the spraying device makes it possible to provide the second etching solution on the top side of the substrate at a suitable point .of time.
  • the spraying device is arranged above a surface of the first etching solution.
  • a horizontal transport device for transporting the semiconductor substrate horizontally through the basin is provided as bearing device.
  • Such ⁇ a horizontal transport device might for example be formed by an appropriately arranged set of transport rollers .
  • the spraying device is arranged in an exit area of the basin.
  • an exit area of the basin means an area where the transport of the semiconductor substrate through the basin ends and includes also a region above the basin.
  • the spraying device is arranged in an entrance area of the basin, so that the second etching solution can be sprayed onto the top side of the substrate quite shortly after the underside of the substrate is contacted from below by the first etching solution; i.e. at the beginning of the texturization or etching time, or within the first half of the texturization or etching time or preferably within the first fifth of the texturization or etching time.
  • entrance area of the basin means an area where the transport of the semiconductor substrate through the basin starts and includes also a region above the basin.
  • An advantageous embodiment of the apparatus further comprises a blow-off device for blowing off the sprayed-on second etching solution from the top side of the semiconductor substrate.
  • any blow-off device that is appropriate for the specific application can be used.
  • one or more so called air knives can be provided as blow-off device.
  • Air is preferably used with the blow-off device as medium for blowing off the second etching solution.
  • gases or gas mixtures can be used in principle.
  • the blow-off device is advantageously arranged downstream of the spraying device in a transport direction of the transport device .
  • a further- apparatus for carrying out the process according to the invention comprises a basin- filled with a texturization solution, and a bearing device for arranging a semiconductor substrate such that an underside of the semiconductor substrate is orientated facing down and contacted from below by the texturization solution.
  • the bearing device is set up to lower the semiconductor substrate into the texturization solution in such a way that a top side of the semiconductor substrate is temporarily located below the surface of the texturization solution.
  • a blow-off device for subsequently blowing off the texturization solution from the top side of the semiconductor substrate is provided.
  • the top side is regarded as being located below the surface of the texturization solution, if the substrate is lowered into the texturization solution in such a way that the top side is completely wetted by the texturization solution.
  • the bearing device can be either set up to lower the substrate into the texturization solution in an exit area of the basin or to lower them into the texturization solution in an entrance area of the basin.
  • a blow-off device is provided for blowing off the texturization solution from the top side of the substrate.
  • one or more air knives might be provided as blow-off device. This is particularly advantageous, if the bearing device is set up to lower the substrate into the texturization solution in the entrance area of the basin.
  • gases or gas mixtures described above can be used as medium of the blow-off device.
  • the bearing device is realiz by means of transport rollers.
  • some of those transport rollers are set up to transport the semiconducto substrate horizontally through a part of the basin.
  • FIG. 1 Schematic illustration of a first embodiment of the process according to the invention and of a first embodiment of an apparatus according to the invention
  • FIG. 2 Schematic illustration of a second embodiment of the process according to the invention and of a second embodiment of an apparatus according to the invention
  • FIG. 3 Schematic illustration of a third embodiment of the process according to the invention and of a third embodiment of an apparatus according to the invention
  • Figure 1 schematically illustrates a first embodiment of a process as well as of an apparatus according to the invention.
  • the apparatus comprises a basin 4 filled with a texturization solution 5.
  • said texturization solution is provided as first etching solution.
  • Transport rollers 9 are -provided as a bearing device for semiconductor substrates 1. Said transport rollers 9 are arranged in a horizontal plane and in this way form a horizontal transport device for trans- porting the semiconductor substrates 1, in short referred to as substrates 1, horizontally through the basin 4.
  • the transport rollers 9 are arranged such that undersides 2 of the substrates 1 are orientated facing down and contacted from below by the texturization solution 5.
  • the transport rollers 9 are furthermore positioned such that the substrates 1 are arranged at a surface 6 of the texturization solution 5 such that the texturization solution ' 5 is prevented from contacting a top side 3 of the substrates 1.
  • a spraying device 11 for spraying an etching solution 7 onto the top sides 3 of the substrates 1 is provided in an entrance area 13 of the basin 4 .
  • said etching solution 7 forms the second etching solution.
  • the spraying device is arranged above the surface 6 of the texturization solution.
  • an air knife 15 is provided for blowing off the sprayed-on etching solution 7 from the substrates 1.
  • Said air knife 15 uses a gas 16 as medium for blowing off the etching solution 7.
  • any gas 16 or gas mixture 16 suit- able for the specific application might be used as medium.
  • air is used.
  • the substrates 1 are arranged in such a way that their undersides 2 are orientated facing down and contacted from below by a texturization solution 5. This is realized by means of the transport rollers 9.
  • the undersides 2 of the substrates 1 are texturized by the texturization solution 5. Therefore, texturization starts as soon as the substrates enter the basin 4 and are brought into contact with the texturization solution 5. This is also the point of time when ⁇ the texturization time begins. Said texturization time lasts until the substrates l.exit from the basin 4 and the texturization solution is removed from their undersides 2, for example by rinsing them in water.
  • the etching solution 7 is sprayed onto the top .sides 3 of the substrates in the entrance area 13 of the basin 4. At this point of time the etching time starts and the top sides 3 are etched. Later on, i.e. at the end of the etching time, the etching solution 7 is removed from the top sides 3 of the substrates 1 by blowing it off from the top sides 3 using the air knife 15. As the air knife 15 is arranged away from an exit of the basin 4, the etching solution 7 is removed from the top sides 3 before the end of the texturization time.
  • the etching solution 7 is provided on the top sides 3 of the substrates 1 within a first fifth of the texturization time.
  • the position of the air knife 15 can vary according to the etching time to be realized. In case of shorter etching times it would be arranged in Figure 1 more to the left, otherwise more to the right.
  • the same kind of solution used as texturization solution 5 is also used as etching solution 7.
  • spraying device 11 and air knife 15 are positioned such that the resulting etching time in combination with the used kind of etching solution ensures that less semi- conductor material is etched off from the top sides 3 than from the undersides 2 of the substrates 1.
  • etching solution 55 is sprayed onto the top side 3 of the substrate 1 by means of the spraying device 11.
  • the texturization time starts and the top sides , 3 are texturi ' zed.
  • the texturization solution 57 is removed from, the top sides 3 of the substrates 1 by blowing it off from the top sides 3 using the air knife 15.
  • the air knife 15 is ar- ranged away from an exit of the basin 4, the texturization solution 57 is removed from the top sides 3 before the end of the etching time.
  • spraying device 11 and air knife 15 are positioned such that the resulting texturiza- tion time in combination with the used etching solution 55 and the used texturization solution 55 ensures that less semiconductor material is etched off from the undersides 2 than from the top sides 3 of the substrates 1.
  • the embodiment of Figure 2 differs from the one of Figure 1 in that the spraying device 11 is arranged in an exit area 25 of the basin 4. No air knife is provided. Instead, a water basin 27 filled with water, further on referred to as rinsing water 29, is provided. When substrates 1 exit from the basin 4, a film 23 of texturization solution remains on their undersides 2. This film 23 is subsequently removed together with the etching solution 7 on the top sides 3 of the substrates 1 by rinsing them.- in the rinsing water 29. -Consequently, in the em-
  • the etching solution 7 is provided on the top sides 3 of the wafers before the end of the texturization ⁇ time and etching time ends together with the texturization time when substrates 1 are rinsed in the rinsing water 29.
  • the begin of the etching time is set by the position of the " spray- ing device 11.
  • the spraying device is arranged such that the etching solution 7 is provided within the last half or last fifth of the texturization time.
  • the etching solution 7 can, in principle, again be replaced by the texturization solution 57 and texturization solution 5 can again be replaced by etching solution 55 in order to provide a further embodiment of the additional form of the process according to the invention.
  • it can be appropriate to move the spraying device 11 more to the ⁇ left in order to lengthen the texturization time during which the texturization solution 57 texturizes the top sides 3 of the substrates 1.
  • transport rollers 9 are provided as bearing device. The transport rollers 9 again form a horizontal plane and transport the substrates 1 horizontally through the basin 4. As compared to these transport rollers 9, there exist displaced transport rollers 30 for transporting the substrates 1 out of the basin.
  • transport rollers 33 are provided for transporting the substrates into the water basin 27, which comprises transport rollers 31 for transporting the substrates 1 through the water basin 27.
  • Figure 3 which is like all other figures not true to scale, differs from Figure 1 in such that no spraying device is provided. Instead, a bearing device 9, 49 formed by means of transport rollers 9, 49 is set up to lower the substrates 1 into the texturization solution such that the top sides 3 of the substrates 1 are temporarily located below the surface 6 of the texturization solution.5.' This is realized by means of displaced transport rollers 49 which are displaced as compared to transport rollers 9 being arranged in a horizontal plane as explained above.
  • etching solution 47 is provided on the top sides 3 of the substrates 1. Etching time starts when texturization solution 5 gets in contact with the top sides 3 of the substrates 1. In analogy with Figure 1, etching time ends when the texturization solution 47 used as etching solution is blown off from the top sides ⁇ 3 of the substrates by the air knife 15.
  • the bearing device can be set up to lower the substrates 1 into the texturization solution by other means than displaced transport rollers 49, e.g. by lifting systems or conveyor belts.
  • displaced transport rollers 49 are arranged in an entrance area 43 of a basin 45 filled with texturization solution 5.
  • the displaced transport rollers 49 could be arranged in an exit area 44 of the basin 45 and the air knife 15 could be removed.
  • the apparatus shown in Figure 4 can be used to perform such a process according to the invention, wherein the underside of the substrate is to be texturized and contacted from below by a texturization solution as described above. Furthermore, said apparatus can apparently be used to perform the additional form of the process according to the invention, wherein the top side of the substrate is texturized.
  • a per se known single-side polishing etching step can be added for chemically polishing the top sides 3 of the substrates 1.
  • Corresponding chemical polishing devices can be added to the apparatuses de- scribed above.
  • the polishing etching step is realized using a chemical polishing solution.

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Abstract

La présente invention concerne un procédé pour texturiser un substrat à semi-conducteur plat (1). Ledit procédé consiste à agencer le substrat à semi-conducteur (1) de manière telle qu'un côté inférieur (2) destiné à être texturisé soit orienté de façon à être tourné vers le bas et en contact à partir du dessous avec une solution de texturisation (5) durant une période de texturisation, à fournir une solution de gravure (7 ; 47) sur un côté supérieur (3) du substrat à semi-conducteur (1) afin d'éliminer par gravure un matériau à semi-conducteur à partir du côté supérieur (3) du substrat à semi-conducteur (1) durant une période de gravure, et à choisir la solution de gravure (7) et la période de gravure de sorte qu'une quantité inférieure de matériau à semi-conducteur soit éliminé par gravure à partir du côté supérieur (3) qu'à partir du côté inférieur (2) du substrat à semi-conducteur (1). La présente invention concerne également un appareil pour réaliser ce procédé.
PCT/IB2010/001980 2010-08-10 2010-08-10 Procédé et appareil pour texturiser un substrat à semi-conducteur plat Ceased WO2012020274A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/IB2010/001980 WO2012020274A1 (fr) 2010-08-10 2010-08-10 Procédé et appareil pour texturiser un substrat à semi-conducteur plat
TW099127725A TW201207928A (en) 2010-08-10 2010-08-19 Process and apparatus for texturizing a flat semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IB2010/001980 WO2012020274A1 (fr) 2010-08-10 2010-08-10 Procédé et appareil pour texturiser un substrat à semi-conducteur plat

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WO2012020274A1 true WO2012020274A1 (fr) 2012-02-16

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014110222A1 (de) * 2014-07-21 2016-01-21 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Strukturierung von Ober- und Unterseite eines Halbleitersubstrats
WO2016082826A1 (fr) * 2014-11-25 2016-06-02 Rena Gmbh Procédé et dispositif pour le traitement de la face inférieure d'un substrat
WO2017007988A1 (fr) * 2015-07-08 2017-01-12 Deca Technologies Inc. Procédé de traitement de dispositifs semi-conducteurs pour le retrait de matériau
WO2018162546A1 (fr) * 2017-03-10 2018-09-13 Gebr. Schmid Gmbh Procédé pour la production de plaquettes texturées et dispositif de traitement d'abrasion par pulvérisation
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