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WO2012095117A1 - Capteur de pression micromécanique et son procédé de fabrication - Google Patents

Capteur de pression micromécanique et son procédé de fabrication Download PDF

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Publication number
WO2012095117A1
WO2012095117A1 PCT/EP2011/000096 EP2011000096W WO2012095117A1 WO 2012095117 A1 WO2012095117 A1 WO 2012095117A1 EP 2011000096 W EP2011000096 W EP 2011000096W WO 2012095117 A1 WO2012095117 A1 WO 2012095117A1
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WO
WIPO (PCT)
Prior art keywords
layer
pressure sensor
membrane
silicon
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2011/000096
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German (de)
English (en)
Inventor
Joachim Knoch
Klaus KALLIS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technische Universitaet Dortmund
Original Assignee
Technische Universitaet Dortmund
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technische Universitaet Dortmund filed Critical Technische Universitaet Dortmund
Priority to PCT/EP2011/000096 priority Critical patent/WO2012095117A1/fr
Priority to EP11702921.5A priority patent/EP2663849A1/fr
Publication of WO2012095117A1 publication Critical patent/WO2012095117A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0098—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means using semiconductor body comprising at least one PN junction as detecting element
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00158—Diaphragms, membranes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate

Definitions

  • the present invention relates to a micromechanical pressure sensor with a membrane formed in a first semiconductor layer and a sacrificial layer on which the semiconductor layer is applied. Furthermore, the invention relates to a method for producing such a pressure sensor and a use thereof for high-resolution pressure measurement.
  • Micromechanical pressure sensors so-called pressure cans, have been used in various technological fields for several years. For example, pressure cans in the automotive sector are used to monitor tire pressure. In the medical field, pressure sensors are used to monitor blood pressure. Three methods are used for reading today's micromechanical pressure cans. In a first method, the sensor is read out via the piezo-resistive change of the resistance of a silicon membrane. In a piezo-resistive sensor, the change of the electronic
  • Transport properties of a material in particular silicon used to make a mechanical strain as an electrical signal measurable.
  • mechanical stress essentially a change in resistance is achieved, which can be measured.
  • the reason for this is microscopic nature.
  • Either the band structure can change and / or the frequency of scattering of the electrons in the strained material, which manifests itself as a change in resistance.
  • Resistance change can then be made a statement about the pressure.
  • the piezo-resistive readout provides only a change in resistance of at most 30%, which is why so-called Wheatstone bridges must be used to ensure sufficient sensitivity of the sensor, as in the publications "A novel MEMS pressure sensor with MOSFET on chip", IEEE Sensors 2008 , 1564 (2008), Z.-H, Zhang, Y.-H. Zhang, LT. Liu and T.-L. Ren, and "A Silicon Piezoresistive Pressure Sensor", Proc. Is IEEE boarding. Workshop Electron Design, Test Appl. (2002), R. Singh, LL Ngo, HS Seng, FNC Mok.
  • the Wheatstone bridge responds to changes in resistance with a change in voltage.
  • the change in capacitance of the pressure sensor between the membrane and the underlying substrate is used for pressure determination.
  • the capacitive reading is e.g. on the change in current of an integrated into the silicon membrane of the pressure sensor MOSFETs (Metal Oxide Semiconductor Field Effect Transistor) in the on state.
  • MOSFETs Metal Oxide Semiconductor Field Effect Transistor
  • Readout signal can be reached from the pressure, where d ox is the decisive factor for the value of the capacitance oxide thickness.
  • d ox is the decisive factor for the value of the capacitance oxide thickness.
  • a third possibility is the reading about the changed resonant frequency of a resonant circuit due to the capacitance change of the pressure cell, see eg the publication of H. Dudaicevs, M. Kandier, Y. Manoli, W. Mokwa and E. Spiegel in Sensors Actuators A, 43, 157 (1994).
  • the pressure cell must have comparatively large lateral dimensions in order to realize the necessary capacity in the pF range.
  • a further reduction and integration of pressure cans can not be achieved with this readout technology thus.
  • the membranes of micromechanical pressure sensors are manufactured today from polycrystalline silicon.
  • a sacrificial layer for example made of silicon nitride, of suitable lateral and vertical dimensions is applied to an oxidized substrate (oxide) and subsequently polysilicon is grown over this structure. If the sacrificial layer is now etched away, a polysilicon membrane remains, which is closed by further growth of the polysilicon, so that a cavity arises in between the polysilicon and the oxidized substrate.
  • a sacrificial layer for example made of silicon nitride
  • Membrane due to the variation in mechanical properties of polysilicon, which in turn is related to the varying morphology.
  • a polysilicon membrane is mechanically much less stable than a crystalline silicon material membrane.
  • Hydrogen atmosphere is a cavity in the silicon forming the substrate, i. in so-called bulk silicon, which is then bounded on all sides by the silicon.
  • the use of the first two readout methods is not possible with such a sensor, since the membrane is not electrically insulated from the silicon lying opposite it, with which it is integrally formed.
  • the application of a capacitive readout then leads to unacceptable leakage currents.
  • Another disadvantage of this technology is that the dimensions of the cavity, in particular its height, depends on the thickness of the membrane and therefore is freely adjustable only to a small extent. A to a special application
  • a micromechanical pressure sensor with a membrane formed in a first semiconductor layer and a sacrificial layer on which the
  • Semiconductor layer is proposed, proposed in which in the membrane, a drain region and a source region is present, which are opposite to each other and which are separated by a duct, wherein the sacrificial layer is a
  • Insulation layer forms, below which another layer is located with a gate electrode which is opposite to the duct, and wherein between the further layer and the membrane, a cavity is formed in the insulating layer.
  • Layer structure consisting of a first semiconductor layer, a sacrificial layer and a further layer is produced, wherein the sacrificial layer forms an insulating layer and is located between the first semiconductor layer and the further layer, then depressions are introduced into the first semiconductor layer such that a recess to the sides respectively is bounded by a web and extends to the insulating layer, then a Unterforden a cavity in the insulating layer is such that the cavity is bounded by the first semiconductor layer and the further layer, wherein the first semiconductor layer for forming a in the
  • a pressure sensor produced in this way forms a field-effect transistor (FET) and has an exponentially read-out signal dependent on the pressure. As a result, it has a much higher sensitivity than the state of the art allows.
  • FET field-effect transistor
  • the measurable range can be significantly increased, and especially the low pressure range becomes accessible.
  • the dimensions of the cavity and the membrane can be determined by the thickness of the
  • Isolation layer and the width of the recesses or the webs are set independently, so that a reduction in the dimensions of the pressure sensor is possible.
  • the use of an insulating layer makes it possible to produce a gate electrode isolated from the membrane underneath the membrane.
  • the first semiconductor layer consists of silicon, in particular monocrystalline silicon.
  • Silicon has the advantage that it is particularly easy to process. In particular, structures can be etched particularly simply and precisely in this structure, and limited regions can be easily doped. The use of monocrystalline silicon has the advantage that this results in a higher mechanical strength of the membrane compared to polycrystalline silicon (ie
  • the further layer may consist of a second semiconductor layer, in particular of silicon.
  • a second semiconductor layer in particular of silicon.
  • single- or polycrystalline silicon can be used.
  • the formation of a gate electrode in the further layer can then take place by implanting ions into the second silicon layer through the membrane. This ion-implanted region becomes conductive, leaving a
  • the gate electrode can also be produced by using a metal as the further layer.
  • the layer structure can then be produced by oxidizing a silicon substrate, then applying a sufficiently thick, in particular several 10 ⁇ m thick, metal layer for sufficient mechanical stability, and then grinding away the substrate until the substrate is removed
  • the insulating layer may consist of silicon oxide (SiO 2 ).
  • silicon oxide is a good insulator, which can easily be made of silicon, and on the other hand can be well etched.
  • the recesses to be introduced into the first semiconductor layer may preferably form trenches which run parallel to one another. These can be particularly easily and precisely determined by anisotropic etching, i. by vertical etching, in the first
  • the recesses may be formed by holes, each forming a row.
  • trenches have the advantage that with their width and spacing, the thickness of the desired membrane can be determined more easily.
  • the drain region and the source region are the same
  • a pressure sensor is formed as a field effect transistor (FET) with short channel behavior, which can be called short channel on nothing FET (SCHONFET) due to the lying above the cavity line channel.
  • FET field effect transistor
  • short channel and “short channel effect” refers to the short channel
  • the gate capacitance CG for the pressure sensor according to the invention corresponds to the product of relative dielectric constant ⁇ o and gate area through the distance d o of the gate electrode to the membrane.
  • the drain-source capacitance Cos can approximately from the product of relative dielectric constant ⁇ & , the width W of the doped regions and the membrane thickness dsi, divided by the channel length L are calculated. From the capacity relation follows in a first approximation:
  • Zo * is the relative dielectric constant of the insulating layer that is air between the gate and the membrane, so that
  • si is the relative dielectric constant of the first semiconductor layer, in particular the silicon layer
  • W is the width of the FET
  • L is its channel length
  • d ox is the distance between the membrane and the gate, ie the air gap.
  • the two capacitances should be approximately equal.
  • L 2 Esi / eox * dsi * d ox .
  • the drain region and the source region may be formed by oppositely highly doped regions in the first semiconductor layer, wherein the thickness of the membrane, its distance from the gate electrode and the width and spacing of the doped regions are chosen such or ., the capacitance between the gate electrode and the conduction channel is much larger than the capacitance between the drain region and the source region.
  • the one area is thus n-doped while the other area is p-doped.
  • the pressure sensor is implemented as a field effect transistor (FET) without short channel behavior, in which the electrical charge carriers in the semiconductor structure of the
  • the doping of the drain and the source region is above an amount of 1 * 10 19 charge carriers per cm 3 .
  • a highly doped area allows the Depletion zone in the contacts relative to the bends of the
  • Neglecting conduction band / valence band in the channel which simplifies the design of the pressure sensor.
  • the ions which make the charge carriers available may be, for example, by diffusion or implantation into the respective ones
  • the drain region and the source region are formed by metals.
  • a pressure sensor is obtained as a Schottky barrier MOSFET (SB MOSFET).
  • SB MOSFET Schottky barrier MOSFET
  • a potential barrier is formed at the metal-semiconductor junction, in particular at the source-channel junction. This barrier becomes thinner when pressure is applied to the sensor, resulting in an exponential dependence of the current on the pressure.
  • Tunnel current through the barrier depends exponentially on its thickness.
  • the SB MOSFET does not have short channel effects
  • the drain region and the source region overlap the gate electrode respectively. This causes no areas to exist that are not properly affected by the gate.
  • Membrane used which may have a thickness in the range between 5 to 50nm. This is particularly advantageous in the SB MOSFET or in the tunnel FET, since otherwise the tunnel currents may become very small.
  • ions can be introduced into the second silicon layer to form the gate electrode.
  • the introduction can take place by implantation, wherein the ions are implanted through the membrane into the second silicon layer.
  • This process step fits well into the process order after the annealing and before the formation of the drain region and the source region. This has the advantage that the layer structure is always only from above, i. must be handled from one direction. Turning over the
  • the layer structure is not necessary.
  • the layer structure can preferably be produced by two different methods.
  • the insulating layer is formed of silicon oxide, which can be produced by implantation of oxygen ions in silicon and subsequent annealing.
  • This manufacturing method is known and is called SIMOX (Separation by Implantation of Oxygen).
  • oxygen is implanted in a silicon wafer.
  • the wafer oxidizes from the inside, in contrast to the conventional oxidation, which takes place only on the surface of the wafer, because there is the oxygen.
  • the oxygen is located below the wafer surface where it creates a buried oxide layer.
  • the layer structure can be produced from a bonded SOI wafer (silicone-on-insulator).
  • Manufacturing method is known.
  • a wafer is oxidized from a silicon monocrystal and pressed a second wafer upside down on the oxidized wafer.
  • This layer structure is then tempered and then a wafer is ground.
  • SiO 2 insulator
  • Such a layer structure is called SOI wafer.
  • the introduction of the recesses can by anisotropic etching of the first
  • the cavity can be made by isotropic etching. This can be done wet-chemically or by reactive ion etching. Anisotropic etching etches in one direction only. That is, the pits are made only by vertical etching. In the case of isotropic etching, etching is the same in all directions. This means that the cavity is etched both vertically and horizontally.
  • the depressions are introduced into the first semiconductor layer in such a way that the width of the depressions is smaller than the width of the webs. This ensures that the webs during annealing to widen their height so that their sides to a closed membrane touch.
  • the membrane thickness can be determined by the width of the depressions and the width of the webs.
  • the proposed pressure sensor can be used according to the invention for pressure measurement.
  • a method for reading the pressure sensor is proposed in which applied between the drain region and the source region, a voltage and the current through the drain-source region at a
  • this ambient pressure is determined.
  • the field effect transistor integrated in the pressure sensor is consequently operated below the threshold voltage in the off state due to a voltage between the gate electrode and the source region, since the threshold voltage is the voltage at which the component changes over to the on state.
  • This has the particular advantage that the power loss is minimized. Because the missing gate voltage leads to a very small current, the so-called outflow, which also decreases exponentially depending on the pressure exerted on the membrane. This allows the use of such pressure sensors in energy self-sufficient sensor networks. Together with the possibility of reducing the dimensions of the pressure sensor, sensors for the medical sector, for example, become possible in this way.
  • FIG. 1a to 1h illustrating the manufacturing process of a
  • Fig. 2a conduction band in a MOSFET with short channel effects
  • FIG. 2b Drain current for a component with increasing gate oxide thickness.
  • FIG. 3a Schematic diagram of the buried gate pressure sensor.
  • FIG. 3b conduction band course through the component integrated in the silicon membrane.
  • Fig. 3c drain current as a function of pressure
  • Fig. 4a pressure sensor with integrated Schottky barrier MOSFET
  • Fig. 4b Illustration of the exponential change of the current at a
  • Fig. 4c exemplary experimental curves showing the strong dependence of
  • Fig. 5a top: pressure sensor with integrated tunnel FET
  • Fig. 5b experimental characteristics of a tunnel FET for two
  • FIGS. 1a to 1h show the production steps for the production of a micromechanical pressure sensor 1 according to the invention with a membrane 3 formed in a first silicon layer 2 and an insulation layer 4 on which the silicon layer 2 is applied.
  • a second silicon layer 5 in which ions are introduced to form a gate electrode 6.
  • the membrane 3 two separate areas 7, 8 separated from one another by a line channel 12 of the channel length L are formed, in which ions are introduced for forming a respective drain region 7 and a source region 8 overlapping the gate electrode 6.
  • Membrane 3 a cavity 9 is formed in the insulating layer 4, in which the membrane 3 can move into or bend in at an environmental pressure exerted on the pressure sensor 1. Under negative pressure, it moves out of the cavity.
  • the insulating layer 4 consists of silicon oxide (S1O2) and is also referred to below as the oxide layer. Being located between the first and second silicon layers 2, 5, it constitutes a so-called "buried layer.”
  • the first silicon layer 2 consists of monocrystalline silicon.
  • the drain region 7 and the source region 8 are each with negatively charged ions n ++ heavily doped. These regions 7, 8, the gate electrode 6 overlap each other by at least a quarter of its width.
  • a first production step not shown in FIGS. 1a to h, the layer structure with the buried oxide layer 4 is produced. This can
  • bonded SOI Silicon on Insulator
  • the thickness of the buried oxide layer 4 essentially determines the height of the cavity 3.
  • the height of the cavity 3 can be adjusted completely freely, which is particularly crucial for the readout method according to the invention.
  • trenches 10 are anisotropically etched out into the first silicon layer 2 in such a way that a trench 10 is delimited in each case by a web 11 and extends to the insulating layer 4.
  • a cavity 9 is introduced into the buried oxide layer 4 with an isotropic etching step, FIG. 1 b. This can be done either wet-chemically or by means of reactive ion etching.
  • the webs 11 In a subsequent annealing step in pure hydrogen (H2), the webs 11 increasingly round, see FIGS. 1c and 1d. Finally, they form a closed membrane 3 of thickness dsi, as can be seen in FIG. 1e.
  • H2 pure hydrogen
  • ions are implanted through the membrane 3 into the second silicon layer 5 below the buried oxide layer 4, which ions form a gate electrode 6 after activation, see FIG. 1f.
  • the last step involves defining a source region 7 and a drain region 8. This is done by a mask 12 covering those regions of the top silicon layer 2 into which no ions are to be implanted, see FIG. 1g.
  • FIG. 1 g shows the subsequent ion implantation of similar ions n ++ into the regions 7, 8 not covered by the mask 12, which form the source region 7 and the drain region 8 after the ion implantation.
  • the finished pressure sensor 1 is shown in Fig. 1 h.
  • the source region 7, drain region 8 and the gate electrode 6 form a transistor which is an integral part of the pressure sensor 1, wherein the
  • the height of the cavity 9 is determined essentially by the thickness of the oxide layer 4 and not by the silicon webs 11. As a result, the dimensions of the pressure sensor 1 can be flexibly optimized to the desired application. If e.g. a pressure sensor with a thin membrane and large cavity height is desired, this can be done with the known method of silicon forming
  • the membrane 3 is covered by a thermally grown silica 4, i. by the buried oxide, isolated from the substrate 5.
  • the excellent insulating properties of silicon oxide make the SCHONFET technology presented here possible in the first place.
  • Manufacturing method can be both the diaphragm thickness dsi, the height d ox of the cavity 9 (equal oxide thickness) and the channel length L set exactly defined and thus achieve the desired short channel effects. This will also be one
  • Fig. 3 (a) schematically shows the device structure of the pressure sensor 1, and the variation of the outflow of the pressure sensor 1 is illustrated in Fig. 3 (c). If a pressure p is exerted on the membrane 3, then the effective oxide thickness d ox , ie the air gap between the membrane 3 and the gate electrode 6, is reduced, as a result of which the capacitance CG between gate electrode 6 and conduction channel 12
  • Transistor is. This will drain current through the transistor, even in the
  • FIG. 3 (c) shows the drain current as a function of the pressure for a pressure sensor 1 according to the invention.
  • the strong dependence of the current on the pressure with a circumference of almost 6 is clearly evident Orders of magnitude.
  • the thickness of the oxide layer 4 the thickness of the first silicon layer 2 (SOI layer) and the width and spacing of the trenches 10 to be etched into the first silicon layer, see FIG. 1 (a), as already mentioned, the membrane thickness dsi, the lateral dimension of the pressure sensor 1 and the channel length L of the MOSFET integrated in the pressure sensor 1 are optimized for the respective field of application.
  • An exponentially pressure-dependent sensor signal can also be achieved with a Schottky barrier MOSFET integrated in the pressure sensor 1, see FIG. 4 (a) and a band-to-band tunnel FET, see FIG. 5 (a).
  • the source region 7 and the drain region 8 are formed by metals, whereas the source and drain are highly doped in the band-to-band tunnel FET having different ion types n ++ and p ++ .
  • very thin membranes are used in the band-to-band tunneling MOSFET to get a significant tunneling current.
  • thin membranes should preferably be used.
  • the sensitivity of a pressure sensor based on tunnels Schottky barrier MOSFET or band-to-band tunnel FET will be greater than achievable with existing piezoresistive pressure sensors, it will be worse compared to the SCHON-FET technology presented earlier fail.
  • the presented invention enables the realization of micromechanical pressure sensors with an exponentially dependent on the pressure readout signal, so that a much higher sensitivity of the pressure cans is achieved than is possible with the current state of the art.
  • the measurable pressure range of a micromechanical pressure sensor can be significantly increased, which makes the low pressure range accessible in particular.
  • the invention allows use in energy-autonomous sensor networks.
  • the technique presented here is completely CMOS-compatible and can be produced in planar technology.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

L'invention porte sur un capteur de pression micromécanique (1) et sur son procédé de fabrication, le capteur présentant une membrane (3) placée dans une première couche de semi-conducteur (2) et une couche sacrificielle (4) sur laquelle la couche de semi-conducteur (2) est déposée. Dans la membrane (3), se trouvent une région de drain (7) et une région de source (8) qui se font mutuellement face et qui sont séparées l'une de l'autre par un canal de passage (12), la couche sacrificielle (4) formant une couche isolante (4) au-dessous de laquelle se trouve une autre couche (5) comportant une électrode de grille (6) qui fait face au canal de passage (12). Une cavité (9) est formée entre l'autre couche (5) et la membrane (3), ladite cavité étant placée dans la couche isolante (4) et la membrane pouvant s'engager dans ladite cavité en réponse à une pression exercée sur le capteur de pression. L'invention porte en outre sur un procédé de mesure de la pression.
PCT/EP2011/000096 2011-01-12 2011-01-12 Capteur de pression micromécanique et son procédé de fabrication Ceased WO2012095117A1 (fr)

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PCT/EP2011/000096 WO2012095117A1 (fr) 2011-01-12 2011-01-12 Capteur de pression micromécanique et son procédé de fabrication
EP11702921.5A EP2663849A1 (fr) 2011-01-12 2011-01-12 Capteur de pression micromécanique et son procédé de fabrication

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013028412A1 (fr) * 2011-08-24 2013-02-28 Qualcomm Mems Technologies, Inc. Transistor à couches minces avec interstice de siliciure
DE102012023429B3 (de) * 2012-11-29 2013-08-22 Elmos Semiconductor Ag CMOS kompatibler Drucksensor auf Tunneleffekt-Basis mit Verfahren
CN108467005A (zh) * 2017-02-09 2018-08-31 英飞凌科技股份有限公司 半导体装置和用于形成半导体装置的方法
CN109721021A (zh) * 2017-10-30 2019-05-07 中芯国际集成电路制造(上海)有限公司 一种mems器件及制备方法、电子装置
CN111415993A (zh) * 2020-03-16 2020-07-14 中国科学院微电子研究所 一种多介质检测传感器及其制作方法

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WO2009128084A1 (fr) * 2008-04-15 2009-10-22 Indian Institute Of Science Capteur tec de déviation élastique sous le seuil pour détecter une pression/force, procédé et système à cet effet

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