WO2012081144A1 - Semiconductor device and production method for same - Google Patents

Abstract

Provided is a semiconductor device with a metal microparticle layer (51) formed on top of a supporting member (50). An adhesion layer (12) comprising metal microparticles constituting the metal microparticle layer (51) is formed on top of the top part of an electrode (11) formed on top of a substrate (10), by bringing the top part of the electrode (11) into contact with the metal microparticle layer (51) on top of the supporting member (50) and adhering part of the metal microparticle layer (51) to the top of the top part of the electrode (11). The substrate (10) and a substrate (20) are laminated by making the electrode (11) formed on top of the substrate (10) face an electrode (21) formed on top of the substrate (20), and by connecting the electrode (11) and the electrode (21) via the adhesion layer (12).

Description

Semiconductor device and manufacturing method thereof

The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a chip-chip stacking, a chip-wafer stacking or a wafer-wafer stacking semiconductor device and a manufacturing method thereof.

In recent years, as semiconductor integrated circuit devices have become highly integrated, highly functional, and high-speed, for example, three-dimensional integration technology by chip-chip stacking, chip-wafer stacking, or wafer-wafer stacking of substrates using through electrodes, etc. Has been proposed (see Non-Patent Document 1, for example).

In two-dimensional miniaturization like the conventional SoC (System on （Chip), an increase in wiring resistance caused by grain boundary scattering or interface scattering of electrons accompanying reduction in the cross-sectional area of wiring, and wiring length This is because there is a concern that the performance deteriorates due to an increase in wiring delay caused by an increase in the number of lines.

Therefore, in the three-dimensional integration technology, the semiconductor integrated circuit device is three-dimensionally stacked to expand the wiring area, thereby enabling the wiring cross-sectional area to be increased and the wiring length to be shortened. That is, it is possible to improve performance while increasing the degree of integration.

In addition, when a substrate such as a silicon substrate is stacked in the three-dimensional integration technology, bonding between electrodes of each substrate is essential for electrical connection between the substrates. Usually, the electrodes are joined together by a method in which the electrodes are thermocompression-bonded in chip-chip lamination, chip-wafer lamination, or wafer-wafer lamination.

JP 2006-128272 A

ITRS (The International Technology Roadmap for Semiconductors) 2007 Assembly and Packaging Chapter (Japanese translation), P.41-42

However, the above-described conventional three-dimensional integration technique has a problem that bonding failure occurs between the electrodes of each substrate. Hereinafter, it demonstrates concretely, referring drawings.

FIG. 5 shows a cross-sectional configuration of a semiconductor device in which substrates are stacked using a conventional three-dimensional integration technique. As shown in FIG. 5, a through electrode 101 is formed in a first substrate 100 having an element formation surface (front surface) 100a and an opposite surface (back surface) 100b. A transistor 102 is formed over the surface 100 a of the first substrate 100, and a wiring layer 103 having a multilayer wiring electrically connected to the transistor 102 and the through electrode 101 is formed. On the back surface 100b of the first substrate 100, the top portion of the through electrode 101 serving as the back surface side electrode is exposed. The first substrate 100 includes a second substrate 200 having an element formation surface (front surface) 200a and an opposite surface (back surface) 200b, a back surface 100 of the first substrate 100, and a front surface 200a of the second substrate 200. They are stacked so as to face each other. A transistor 201 is formed over the surface 200 a of the second substrate 200, and a wiring layer 202 having a multilayer wiring electrically connected to the transistor 201 is formed. On the outermost surface portion of the wiring layer 202, an electrode pad 203 connected to the top portion of the through electrode 101 serving as the back side electrode of the first substrate 100 is formed.

However, when the back surface side electrode is formed by exposing the top of the through electrode 101 on the back surface 100b side of the first substrate 100 using grinding, CMP (chemical mechanical polishing), dry etching, or the like, as shown in FIG. In addition, the position of the top portion (bottom surface of the exposed portion) of the through electrode 101 varies. Here, the diameter of the through electrode 101 is typically about 5 μm to about 100 μm, and the height of the exposed portion (back surface side electrode) of the through electrode 101 is typically about 0.5 μm to about 10 μm. The size of the position variation at the top of the through electrode 101 is typically about 0.1 μm to about 1 μm.

Such positional variations include the thickness variation of the first substrate 100 itself, the resist pattern dimensional variation in the lithography process when the through electrode 101 is formed, and the penetration due to the variation in the dry etching rate within the wafer surface. This occurs due to variations in the height of the exposed portion of the electrode 101 itself.

Further, as shown in FIG. 5, the bottom surface of the through electrode 101 of the first substrate 100 and the top surface of the electrode pad 203 of the second substrate 200 are parallel to each other due to substrate thickness variation or warpage within the wafer surface. Since it cannot be held, the distance between the top portion of the through electrode 101 (the bottom surface of the back-side electrode) and the upper surface of the electrode pad 203 also varies within the wafer surface.

Due to variations in electrode height and distance between electrodes on each substrate as described above, the pressure applied within the wafer surface varies when electrodes on each substrate are thermocompression bonded. Occurs. As a result, in the worst case, there occurs a defect that a gap is generated between the opposing electrodes in a part of the wafer and a bond is not formed.

In order to solve the problems of the conventional three-dimensional integration technique, a technique has been proposed in which an assembly of metal particles is interposed between the electrodes when the electrodes of each substrate are joined together (Patent Literature). 1). However, in the method disclosed in Patent Document 1, it is necessary to dispose a liquid material containing metal particles on each electrode using an ink jet apparatus, which complicates the process and deteriorates the throughput. At the same time, an increase in cost is inevitable.

In view of the above, an object of the present invention is to provide a new three-dimensional integration technique that can easily prevent a bonding failure between electrodes of each substrate.

In order to achieve the above object, a method of manufacturing a semiconductor device according to the present invention includes a first substrate on which a plurality of first electrodes are formed, and each first electrode of the first substrate. A method of manufacturing a semiconductor device in which a second substrate on which a plurality of second electrodes are formed at corresponding positions is laminated, wherein a first metal fine particle layer is formed on a first support member Step (a), and the top of each first electrode of the first substrate is brought into contact with the first metal fine particle layer on the first support member so as to be on the top of each first electrode. Forming a first adhesion layer made of metal fine particles constituting the first metal fine particle layer on the top of each first electrode by adhering a part of the first metal fine particle layer; (B) and, after the step (b), the first electrodes and the first electrodes corresponding to the first electrodes. The second electrodes are opposed to each other, and the first electrodes and the second electrodes corresponding to the first electrodes are connected via the first adhesion layer, A step (c) of laminating a first substrate and the second substrate.

According to the method of manufacturing a semiconductor device according to the present invention, when the electrodes of each substrate are connected to each other, a layer made of metal fine particles is interposed between the electrodes. For this reason, even if there is a variation in the distance between the electrodes of each substrate due to the variation in the height of the electrodes, the variation in the thickness of the substrate (wafer), etc., a layer made of metal fine particles is formed according to the distance between the electrodes. By deform | transforming, the electrodes of each substrate can be reliably joined. In addition, in order to form a layer made of metal fine particles on the top of each electrode by bringing the tops of the plurality of electrodes on the substrate into contact with the metal fine particle layer formed on the support member in advance, Throughput can be improved and costs can be reduced as compared with the case where a liquid material containing metal particles is arranged on each electrode using an ink jet device.

Therefore, according to the method of manufacturing a semiconductor device according to the present invention, it is possible to easily prevent poor bonding between the electrodes of each substrate.

In the method for manufacturing a semiconductor device according to the present invention, in the step (c), heat treatment is performed while the first electrodes and the second electrodes corresponding to the first electrodes are pressure-bonded to each other. Thus, each of the metal fine particles constituting the first adhesion layer is melted and integrated, whereby each of the first electrodes and each of the second electrodes corresponding to the first electrodes. And may be joined. If it does in this way, the electrodes of each board | substrate can be joined reliably. In this case, the temperature of the heat treatment in the step (c) may be 150 ° C. or higher.

In the method for manufacturing a semiconductor device according to the present invention, in the step (a), the surface of the metal fine particles constituting the first metal fine particle layer may be coated with a first organic material film. If it does in this way, oxidation and aggregation of metal particulates can be prevented. In this case, in the step (c), the first organic material film covering the surface of the metal fine particles constituting the first adhesion layer may be detached from the surface. If it does in this way, since each metal microparticle can be fuse | melted and integrated, the electrodes of each board | substrate can be joined reliably. Here, the first organic material film may be, for example, a SAM film, and the SAM film may contain, for example, alkanethiol.

In the method of manufacturing a semiconductor device according to the present invention, in the step (b), heat treatment may be performed while the top of each first electrode is pressed against the first metal fine particle layer. If it does in this way, a part of metal fine particle layer can adhere reliably on the top part of each electrode on a board | substrate. In this case, the temperature of the heat treatment in the step (b) may be 50 ° C. or higher and 200 ° C. or lower. In this way, it is possible to prevent an increase in melting point due to aggregation due to melting of the metal fine particles while reliably attaching a part of the metal fine particle layer on the top of each electrode on the substrate. The electrodes can be joined at a predetermined temperature.

In the method of manufacturing a semiconductor device according to the present invention, the metal fine particles constituting the first metal fine particle layer may have a particle size of 1 mm (0.1 nm) or more and 1 μm (1000 nm) or less, More preferably, it may be several tens or more and several hundreds of nm or less. In particular, when the average particle size of the metal fine particles is 50 nm or less, the metal fine particles can be melted in a low-temperature process of, for example, about 350 ° C. or less, so that the bonding strength between the electrodes is reduced while reducing damage to the semiconductor device. Can be strong. Such an effect can be obtained if the majority of the metal fine particles have a particle size of about 50 nm or less. In other words, metal fine particles having a particle diameter exceeding 50 nm may be present. More preferably, the average particle diameter of the metal fine particles may be about 40 nm or less in order to melt the metal fine particles in a low temperature process of about 250 ° C. or less. Also in this case, the particle size of the majority of the metal fine particles may be about 40 nm or less, and metal fine particles having a particle size exceeding 40 nm may be present. The above relationship between the particle size and the process temperature is for the case where the metal fine particles are copper fine particles, but the same tendency (particle size) may be obtained for other metal fine particles such as gold and silver. The melting point decreases as the size of the material decreases.

In the method for manufacturing a semiconductor device according to the present invention, the first metal fine particle layer may include fine particles having hardness higher than that of each of the first electrodes and each of the second electrodes. In this way, when the electrodes of each substrate are joined together, the natural oxide film and the contamination layer formed on the electrode surfaces are removed by the polishing effect by the fine particles having hardness higher than that of the electrodes to expose the electrode surfaces. Therefore, the junction yield between the electrodes can be further improved.

In the method of manufacturing a semiconductor device according to the present invention, the first metal fine particle layer may be one or more metal fine particles selected from a metal group composed of copper, silver, and gold, or the metal It may contain fine particles of an alloy of two or more metals selected from the group. In this case, the first metal fine particle layer has a higher hardness than any of copper, silver and gold (that is, a Mohs hardness of 4 or more) and a conductivity of 1 × 10 ⁷ / mΩ or more. The metal fine particles may further be included. In this way, when the electrodes of each substrate are joined together, the natural oxide film and the contaminated layer formed on the electrode surfaces can be removed by the polishing effect of fine particles of other metals to expose the electrode surfaces. Therefore, the junction yield between the electrodes can be further improved. Here, the other metal is a metal selected from one or more metals selected from the group consisting of tungsten, cobalt, nickel, ruthenium, rhodium, iridium, molybdenum, and osmium. An alloy of two or more metals selected from may be used.

In the method for manufacturing a semiconductor device according to the present invention, before the step (c), a step (d) of forming a second metal fine particle layer on the second support member, and the respective steps of the second substrate. The top part of the second electrode is brought into contact with the second metal fine particle layer on the second support member, and a part of the second metal fine particle layer is adhered on the top part of each second electrode. (E) further comprising a step (e) of forming a second adhesion layer made of metal fine particles constituting the second metal fine particle layer on the top of each second electrode, and in the step (c) By connecting the first electrodes and the second electrodes corresponding to the first electrodes through the first adhesion layer and the second adhesion layer, the first electrodes The substrate and the second substrate may be laminated. In this case, in the step (d), the surface of the metal fine particles constituting the second metal fine particle layer may be coated with a second organic material film. If it does in this way, oxidation and aggregation of metal particulates can be prevented. In this case, in the step (c), the second organic material film covering the surface of the metal fine particles constituting the second adhesion layer may be detached from the surface. If it does in this way, since each metal microparticle can be fuse | melted and integrated, the electrodes of each board | substrate can be joined reliably. Here, the second organic material film may be, for example, a SAM film, and the SAM film may contain, for example, alkanethiol.

In the method for manufacturing a semiconductor device according to the present invention, in the step (e), heat treatment may be performed while the top of each second electrode is pressed against the second metal fine particle layer. If it does in this way, a part of metal fine particle layer can adhere reliably on the top part of each electrode on a board | substrate. In this case, the temperature of the heat treatment in the step (e) may be 50 ° C. or higher and 200 ° C. or lower. In this way, it is possible to prevent an increase in melting point due to aggregation due to melting of the metal fine particles while reliably attaching a part of the metal fine particle layer on the top of each electrode on the substrate. The electrodes can be joined at a predetermined temperature.

In the method of manufacturing a semiconductor device according to the present invention, the metal fine particles constituting the second metal fine particle layer may have a particle size of 1 mm (0.1 nm) or more and 1 μm (1000 nm) or less, More preferably, it may be several tens or more and several hundreds of nm or less. In particular, when the average particle size of the metal fine particles is 50 nm or less, the metal fine particles can be melted in a low-temperature process of, for example, about 350 ° C. or less, so that the bonding strength between the electrodes is reduced while reducing damage to the semiconductor device. Can be strong. Such an effect can be obtained if the majority of the metal fine particles have a particle size of about 50 nm or less. In other words, metal fine particles having a particle diameter exceeding 50 nm may be present. More preferably, the average particle diameter of the metal fine particles may be about 40 nm or less in order to melt the metal fine particles in a low temperature process of about 250 ° C. or less. Also in this case, the particle size of the majority of the metal fine particles may be about 40 nm or less, and metal fine particles having a particle size exceeding 40 nm may be present. The above relationship between the particle size and the process temperature is for the case where the metal fine particles are copper fine particles, but the same tendency (particle size) may be obtained for other metal fine particles such as gold and silver. The melting point decreases as the size of the material decreases.

In the method for manufacturing a semiconductor device according to the present invention, the second metal fine particle layer may include fine particles having hardness higher than that of each of the first electrodes and each of the second electrodes. In this way, when the electrodes of each substrate are joined together, the natural oxide film and the contamination layer formed on the electrode surfaces are removed by the polishing effect by the fine particles having hardness higher than that of the electrodes to expose the electrode surfaces. Therefore, the junction yield between the electrodes can be further improved.

In the method of manufacturing a semiconductor device according to the present invention, the second metal fine particle layer may be one or more metal fine particles selected from a metal group composed of copper, silver, and gold, or the metal It may contain fine particles of an alloy of two or more metals selected from the group. In this case, the second metal fine particle layer has a hardness higher than any of copper, silver and gold (that is, a Mohs hardness of 4 or more) and a conductivity of 1 × 10 ⁷ / mΩ or more. The metal fine particles may further be included. In this way, when the electrodes of each substrate are joined together, the natural oxide film and the contaminated layer formed on the electrode surfaces can be removed by the polishing effect of fine particles of other metals to expose the electrode surfaces. Therefore, the junction yield between the electrodes can be further improved. Here, the other metal is a metal selected from one or more metals selected from the group consisting of tungsten, cobalt, nickel, ruthenium, rhodium, iridium, molybdenum, and osmium. An alloy of two or more metals selected from may be used.

In the method for manufacturing a semiconductor device according to the present invention, at least one of the first electrodes and the second electrodes may be a tip portion of a through electrode.

In the method for manufacturing a semiconductor device according to the present invention, at least one of the first electrodes and the second electrodes may be made of metal. In this case, the metal constituting at least one of the first electrodes and the second electrodes may be copper or a copper alloy.

A semiconductor device according to the present invention includes a first substrate, a plurality of first electrodes formed on the first substrate, a second substrate, and the first substrate on the second substrate. A plurality of second electrodes formed at positions corresponding to the first electrodes, and the first electrodes and the second electrodes corresponding to the first electrodes, A plurality of metal fine particles are connected via a layer formed by melting and integrating, whereby the first substrate and the second substrate are laminated.

According to the semiconductor device of the present invention, the electrodes of each substrate are connected through a layer formed by melting and integrating a plurality of metal fine particles. For this reason, even if there is a variation in the distance between the electrodes of each substrate due to the variation in the height of the electrodes, the variation in the thickness of the substrate (wafer), etc., a layer made of metal fine particles is formed according to the distance between the electrodes. By deform | transforming, the electrodes of each substrate can be reliably joined.

In the semiconductor device according to the present invention, the particle diameter of the plurality of metal fine particles may be 1 mm (0.1 nm) or more and 1 μm (1000 nm) or less, more preferably several mm or more and several hundreds. It may be less than or equal to nm. In particular, when the average particle size of the metal fine particles is 50 nm or less, the metal fine particles can be melted in a low-temperature process of, for example, about 350 ° C. or less, so that the bonding strength between the electrodes is reduced while reducing damage to the semiconductor device. Can be strong. Such an effect can be obtained if the majority of the metal fine particles have a particle size of about 50 nm or less. In other words, metal fine particles having a particle diameter exceeding 50 nm may be present. More preferably, the average particle diameter of the metal fine particles may be about 40 nm or less in order to melt the metal fine particles in a low temperature process of about 250 ° C. or less. Also in this case, the particle size of the majority of the metal fine particles may be about 40 nm or less, and metal fine particles having a particle size exceeding 40 nm may be present. The above relationship between the particle size and the process temperature is for the case where the metal fine particles are copper fine particles, but the same tendency (particle size) may be obtained for other metal fine particles such as gold and silver. The melting point decreases as the size of the material decreases.

In the semiconductor device according to the present invention, the plurality of metal fine particles may include fine particles having hardness higher than that of each of the first electrodes and each of the second electrodes. In this way, when the electrodes of each substrate are joined together, the natural oxide film and the contamination layer formed on the electrode surfaces are removed by the polishing effect by the fine particles having hardness higher than that of the electrodes to expose the electrode surfaces. Therefore, the junction yield between the electrodes can be further improved.

In the semiconductor device according to the present invention, the plurality of metal fine particles are selected from one or two or more metal fine particles selected from a metal group composed of copper, silver, and gold, or the metal group. Two or more metal alloy fine particles may be included. In this case, the plurality of metal fine particles have higher hardness than any of copper, silver, and gold metals (that is, Mohs hardness is 4 or more) and other metals having conductivity of 1 × 10 ⁷ / mΩ or more. Further fine particles may be included. In this way, when the electrodes of each substrate are joined together, the natural oxide film and the contaminated layer formed on the electrode surfaces can be removed by the polishing effect of fine particles of other metals to expose the electrode surfaces. Therefore, the junction yield between the electrodes can be further improved. The other metal is one selected from the group consisting of tungsten, cobalt, nickel, ruthenium, rhodium, iridium, molybdenum and osmium, or a metal selected from the group of metals. It may be an alloy of two or more selected metals.

In the semiconductor device according to the present invention, at least one of the first electrodes and the second electrodes may be a tip portion of a through electrode.

In the semiconductor device according to the present invention, at least one of the first electrodes and the second electrodes may be made of metal. In this case, the metal constituting at least one of the first electrodes and the second electrodes may be copper or a copper alloy.

In the semiconductor device according to the present invention, each of the first electrodes is formed so as to protrude from the surface of the first substrate, and the upper surface of each of the second electrodes is the surface of the second electrode. It may be formed so as to be substantially flush with the surface of the second substrate.

According to the present invention, it is possible to provide a new three-dimensional integration technique that can easily prevent a bonding failure between electrodes of each substrate.

FIGS. 1A to 1E are cross-sectional views showing respective steps of the semiconductor device manufacturing method according to the first embodiment. FIG. 2 is a cross-sectional view showing the semiconductor device according to the first embodiment. FIG. 3 is a cross-sectional view showing a semiconductor device according to a modification of the first embodiment. 4A to 4H are cross-sectional views showing respective steps of a method for manufacturing a semiconductor device according to a modification of the first embodiment. FIG. 5 is a cross-sectional view of a semiconductor device in which substrates are stacked using a conventional three-dimensional integration technique.

(First embodiment)
The semiconductor device and the manufacturing method thereof according to the first embodiment will be described below with reference to the drawings.

FIGS. 1A to 1E are cross-sectional views showing respective steps of a semiconductor device manufacturing method according to the first embodiment.

First, as shown in FIG. 1A, a metal fine particle layer 51 is formed on a support member 50 made of, for example, a silicon substrate. The metal fine particle layer 51 is formed by, for example, using a solution in which copper fine particles having a SAM film (self-assembled monomolecular film) formed on the surface and having a diameter of several tens to several hundreds of nanometers are dispersed. You may carry out by carrying out spin coating on 50. As the polymer constituting the SAM film, for example, alkanethiol having 7 or more carbon atoms may be used. More specifically, 3- (6-mercaptohexyl) thiophene known as a polymer that can coordinate to the surface of copper fine particles and stabilize the fine particles can also be used. Good (see Journal of Nanomaterials Volume 2008, Article ID649130). By such a thiol group of the SAM film being coordinated to the surface of the metal fine particles, oxidation and aggregation of the metal fine particles can be prevented. Moreover, you may set the rotation speed and processing time in the spin coating of the solution which disperse | distributed copper microparticles | fine-particles, for example in the range from about 1000 rpm to about 5000 rpm, and the range from about 50 second to about 300 second, respectively.

Next, after the metal fine particle layer 51 is formed on the support member 50 by spin coating, the solvent in the solution in which the above-described copper fine particles are dispersed is performed, for example, at a temperature of about 60 ° C. to about 150 ° C. Volatilize.

Next, a plurality of electrodes 11 made of, for example, copper are formed on a substrate 10 made of, for example, silicon. Here, the electrode 11 may be formed on the substrate 10 using, for example, an electroless plating method. Alternatively, for example, a through electrode is formed in advance in the substrate 10, and then the substrate 10 is ground from the back surface (opposite surface of the element forming surface) to expose the front end portion of the through electrode. The part may be used as the electrode 11. In the present embodiment, the height of the electrodes 11 is, for example, about 5 μm, and the distance between the electrodes 11 is, for example, about 5 μm.

Next, as shown in FIG. 1B, the tops of the electrodes 11 of the substrate 10 are brought into pressure contact with the metal fine particle layer 51 on the support member 50 at a pressure of 2 MPa, for example, for about 2 minutes. Thereafter, as shown in FIG. 1C, when the top of each electrode 11 of the substrate 10 is separated from the metal fine particle layer 51 on the support member 50, a part of the metal fine particle layer 51 adheres on the top of each electrode 11. Thus, the adhesion layer 12 made of metal fine particles constituting the metal fine particle layer 51 is formed on the top of each electrode 11.

In addition, when the top part of each electrode 11 of the board | substrate 10 is crimped | bonded to the metal fine particle layer 51 on the support member 50, a part of metal fine particle layer 51 is reliably ensured on the top part of each electrode 11 by heat-processing. It becomes possible to adhere to. The temperature of this heat treatment may be set, for example, in a range from about 50 ° C. to about 200 ° C., but is not limited to this temperature range. However, it is desirable to set the temperature of the heat treatment to about 200 ° C. or less. The reason is that when a part of the metal fine particle layer 51 is attached on the top of each electrode 11 at a temperature exceeding about 200 ° C., the metal fine particles constituting a part of the attached metal fine particle layer 51 This is because some of them may melt and cause aggregation. When metal fine particles having an enlarged particle diameter are generated by such aggregation, the melting point of the metal fine particles becomes higher depending on the particle size. In other words, the melting point of the metal fine particles whose particle diameter is expanded by aggregation is higher than the melting point of the original metal fine particles before aggregation. As a result, the temperature required for joining the electrodes in the next process rises, causing damage to the semiconductor device.

Next, as shown in FIG. 1D, a plurality of electrodes 21 made of, for example, copper are formed on a substrate 20 made of, for example, silicon. Each electrode 21 is provided at a position corresponding to each electrode 11 of the substrate 10. Here, the formation of the electrode 21 on the substrate 20 may be performed using, for example, an electroless plating method. Alternatively, for example, a through electrode is formed in the substrate 20 in advance, and then the substrate 20 is ground from the back surface (opposite surface of the element forming surface) to expose the front end portion of the through electrode. The part may be used as the electrode 21. In the present embodiment, the height of the electrodes 21 is, for example, about 5 μm, and the distance between the electrodes 21 is, for example, about 5 μm.

Next, after the substrate 10 on which the adhesion layer 12 made of metal fine particles is formed on the top of each electrode 11 is arranged so that each electrode 11 and each electrode 21 on the substrate 20 face each other, FIG. ), The electrodes 11 and the electrodes 22 are pressure-bonded to each other at a pressure of 5 MPa, for example, for about 5 minutes through the adhesion layer 12. Thereby, the board | substrate 10 and the board | substrate 20 are laminated | stacked.

Note that an adhesive may be applied between the substrate 10 and the substrate 20 when the substrate 10 and the substrate 20 are laminated. Specifically, an adhesive called underfill may be filled between the substrate 10 and the substrate 20. In addition, as a method for filling the adhesive, after the electrodes are bonded by the adhesion layer 12 made of metal fine particles, the underfill material is sucked into the gap between the substrate 10 and the substrate 20 using surface tension. Before forming the bonding between the electrodes by the adhesion layer 12 made of metal fine particles, or by applying an adhesive to at least one of the substrate 10 and the substrate 20 in advance. A method of curing the adhesive after bonding may be used.

In the present embodiment, when the electrodes 11 and the electrodes 22 are pressure-bonded to each other, the heat treatment may be performed at a temperature of about 150 ° C. or more, for example. As a result, the SAM film covering the surface of each metal fine particle constituting the adhesion layer 12 is detached, and the metal surface of each metal fine particle is exposed. For this reason, melting of the metal fine particles occurs even at a relatively low temperature, and as a result, the metal fine particles are integrated, so that the electrode 11 and the electrode 21 can be reliably bonded via the adhesion layer 12. At this time, since the adhesion layer 12 made of metal fine particles undergoes plastic deformation, as shown in FIG. 2, when the distance between the electrode 11 and the electrode 21 is relatively narrow, the adhesion layer 12 made of metal fine particles is relatively When the distance between the electrode 11 and the electrode 12 is relatively wide, the adhesion layer 12 made of metal fine particles is deformed relatively small. That is, in the bonding between each electrode 11 and the electrode 21, the adhesion layer 12 made of metal fine particles acts as a buffer region. For this reason, even if the space | interval of each electrode 11 and each electrode 21 varies, each electrode 11 and each electrode 21 can be reliably joined by crimping | compression-bonding, Therefore Formation of highly reliable electrode joining is high yield. Is possible.

The semiconductor device of this embodiment manufactured by the method described above corresponds to the substrate 10, the plurality of electrodes 11 formed on the substrate 10, the substrate 20, and each electrode 11 of the substrate 10 on the substrate 20. Each electrode 11 and each electrode 21 corresponding to each electrode 11 are connected via an adhesion layer 12 formed by melting and integrating a plurality of metal fine particles. Thus, the substrate 10 and the substrate 20 are laminated.

According to this embodiment, when each electrode 11 on the substrate 10 and each electrode 21 on the substrate 20 are connected, the adhesion layer 12 made of metal fine particles is interposed between each electrode 11 and each electrode 21. ing. For this reason, the distance between each electrode 11 on the substrate 10 and each electrode 21 on the substrate 20 varies due to the height variation of the electrode 11 or the electrode 21 or the thickness variation of the substrate 10 or the substrate 20. Even if there is, the adhesion layer 12 made of metal fine particles is deformed according to the distance between the electrodes, so that each electrode 11 on the substrate 10 and each electrode 21 on the substrate 20 can be reliably bonded. . In addition, the top of each electrode 11 on the substrate 10 is brought into contact with the metal fine particle layer 51 previously formed on the support member 50, whereby the adhesion layer made of metal fine particles is respectively formed on the top of each electrode 11. Therefore, the throughput can be improved and the cost can be reduced as compared with the case where a liquid material containing metal particles is disposed on each electrode using an inkjet apparatus.

Therefore, according to this embodiment, it is possible to easily prevent a bonding failure between each electrode 11 on the substrate 10 and each electrode 21 on the substrate 20.

In the present embodiment, the particle size of the metal fine particles constituting the metal fine particle layer 51 may be 1 mm (0.1 nm) or more and 1 μm (1000 nm) or less, more preferably several mm or more. And it may be several hundred nm or less. In particular, when the average particle diameter of the metal fine particles constituting the metal fine particle layer 51 is 50 nm or less, the metal fine particles can be melted in a low temperature process of, for example, about 350 ° C. or less, thereby reducing damage to the semiconductor device. The bonding strength between the electrodes can be increased. Such an effect can be obtained when the particle size of the majority of the metal fine particles in the metal fine particle layer 51 is about 50 nm or less. In other words, metal fine particles having a particle diameter exceeding 50 nm may exist in the metal fine particle layer 51. More preferably, the average particle diameter of the metal fine particles constituting the metal fine particle layer 51 may be about 40 nm or less in order to melt the metal fine particles in a low temperature process of about 250 ° C. or less, for example. Also in this case, the particle diameter of the majority of the metal fine particles in the metal fine particle layer 51 may be about 40 nm or less, and metal fine particles having a particle diameter exceeding 40 nm may exist in the metal fine particle layer 51. The above relationship between the particle size and the process temperature is for the case where the metal fine particles constituting the metal fine particle layer 51 are copper fine particles, but even if the metal fine particles are other metal fine particles such as gold and silver. , The same tendency (decrease in melting point with the refinement of particle size) is observed.

In the present embodiment, the metal fine particle layer 51 may include fine particles having a hardness higher than that of each electrode 11 and each electrode 21. In this way, when each electrode 11 on the substrate 10 and each electrode 21 on the substrate 20 are joined, the surface of each electrode 11 or the natural oxide film or the contamination layer formed on the surface of each electrode 21 is Since the surface of each electrode 11 and the surface of each electrode 21 can be exposed by removing by the polishing effect by the fine particles having higher hardness than the electrode 11 and each electrode 21, the bonding yield between each electrode 11 and each electrode 21 can be further increased. Can be improved.

In the present embodiment, the metal fine particle layer 51 is composed of one or more metal fine particles selected from a metal group composed of copper, silver, gold, platinum, nickel, or the like, or of the metal group. It may contain fine particles of an alloy of two or more metals selected from the inside. In this case, the metal fine particle layer 51 is made of other metals having higher hardness than any of copper, silver and gold (that is, Mohs hardness of 4 or more) and conductivity of 1 × 10 ⁷ / mΩ or more. It may further contain fine particles. In this way, when each electrode 11 on the substrate 10 and each electrode 21 on the substrate 20 are joined, the surface of each electrode 11 and the natural oxide film, the contamination layer, etc. formed on the surface of each electrode 21 are Since the surface of each electrode 11 and the surface of each electrode 21 can be exposed by the polishing effect of other metal fine particles having a high hardness, the bonding yield between each electrode 11 and each electrode 21 can be further improved. it can. Here, the other metal having high hardness is one or more selected from the metal group consisting of tungsten, cobalt, nickel, ruthenium, rhodium, iridium, molybdenum and osmium, or the metal It may be an alloy of two or more metals selected from the metal group.

In the present embodiment, copper is used as the material of the electrode 11 and the electrode 21, but the material of the electrode 11 and the electrode 21 is not particularly limited as long as the material has conductivity. For example, as a material of the electrode 11 and the electrode 21, a copper alloy or other metal may be used instead of copper. Further, the material of the electrode 11 and the material of the electrode 21 may be different.

In the present embodiment, when the plurality of electrodes 21 are formed on the substrate 20, each electrode 21 is formed on the surface of the substrate 20 (if an interlayer film including wiring or the like is formed on the substrate 20, the interlayer Each electrode 21 was formed so as to protrude from the outermost surface of the film: the same applies hereinafter. However, instead of this, for example, as shown in FIG. 3, each electrode 21 is formed so that the surface of the substrate 20 and the upper surface of each electrode 21 are substantially flush with each other, and each electrode 21 and the substrate 10 are formed. You may join each electrode 11 above.

In this embodiment, silicon substrates are used as the substrate 10 and the substrate 20, but the substrate materials of the substrate 10 and the substrate 20 are not particularly limited, and the material of the substrate 10 and the material of the substrate 20 are not limited. And may be different.

In this embodiment, a silicon substrate is used as the support member 50, but the support member 50 is not particularly limited to a substrate or the like as long as a metal fine particle layer can be formed.

In addition, the semiconductor device and the manufacturing method thereof according to the present embodiment include chip-chip stacking (stacking of chip-state semiconductor devices obtained by wafer dicing), chip-wafer stacking (chip-state semiconductor device and pre-dicing semiconductor device). The semiconductor device can be applied to any of the semiconductor devices in which the wafer state semiconductor device is laminated) or the wafer-wafer lamination (lamination of the wafer state semiconductor devices) and the manufacturing method thereof.

(Modification of the first embodiment)
Hereinafter, a semiconductor device and a method for manufacturing the same according to a modification of the first embodiment will be described with reference to the drawings.

FIGS. 4A to 4H are cross-sectional views showing respective steps of a semiconductor device manufacturing method according to a modification of the first embodiment. 4A to 4H, the same components as those of the first embodiment shown in FIGS. 1A to 1E are denoted by the same reference numerals.

First, similarly to the process shown in FIG. 1A of the first embodiment, as shown in FIG. 4A, a metal fine particle layer 51 is formed on a support member 50 made of, for example, a silicon substrate. The metal fine particle layer 51 is formed in the same manner as in the first embodiment, for example, with a SAM film (self-assembled monomolecular film) formed on the surface and a diameter of about several to several hundred nm. You may carry out by spin-coating the solution which disperse | distributed copper fine particles on the support member 50. FIG. Further, the rotational speed and processing time in the spin coating of the solution in which the copper fine particles are dispersed are, for example, in the range from about 1000 rpm to about 5000 rpm, and from about 50 seconds to about 300 seconds, respectively, as in the first embodiment. You may set to the range.

Next, after the metal fine particle layer 51 is formed on the support member 50 by spin coating, the heat treatment is performed at a temperature from about 60 ° C. to about 150 ° C., for example, as in the first embodiment. The solvent in the solution in which the copper fine particles are dispersed is volatilized.

Next, a plurality of electrodes 11 made of, for example, copper are formed on a substrate 10 made of, for example, silicon. Here, the electrode 11 on the substrate 10 may be formed using, for example, an electroless plating method, as in the first embodiment. Alternatively, for example, a through electrode is formed in advance in the substrate 10, and then the substrate 10 is ground from the back surface (opposite surface of the element forming surface) to expose the front end portion of the through electrode. The part may be used as the electrode 11. Also in this modification, the height of the electrodes 11 is, for example, about 5 μm, and the distance between the electrodes 11 is, for example, about 5 μm.

Next, similarly to the step shown in FIG. 1B of the first embodiment, as shown in FIG. 4B, the top of each electrode 11 of the substrate 10 is placed on the metal fine particle layer 51 on the support member 50. For example, the pressure contact is performed at a pressure of 2 MPa for about 2 minutes. Thereafter, similarly to the step shown in FIG. 1C of the first embodiment, the top of each electrode 11 of the substrate 10 is separated from the metal fine particle layer 51 on the support member 50 as shown in FIG. Then, a part of the metal fine particle layer 51 adheres to the top of each electrode 11, and the adhesion layer 12 made of the metal fine particles constituting the metal fine particle layer 51 is formed on the top of each electrode 11.

In this modified example, when the top of each electrode 11 of the substrate 10 is pressure-bonded to the metal fine particle layer 51 on the support member 50, the metal fine particle layer is formed on the top of each electrode 11 by performing heat treatment. It becomes possible to adhere a part of 51 reliably. The temperature of this heat treatment may be set, for example, in a range from about 50 ° C. to about 200 ° C., but is not limited to this temperature range. However, it is desirable to set the temperature of the heat treatment to about 200 ° C. or less. The reason is that when a part of the metal fine particle layer 51 is attached on the top of each electrode 11 at a temperature exceeding about 200 ° C., the metal fine particles constituting a part of the attached metal fine particle layer 51 This is because some of them may melt and cause aggregation. When metal fine particles having an enlarged particle diameter are generated by such aggregation, the melting point of the metal fine particles becomes higher depending on the particle size. In other words, the melting point of the metal fine particles whose particle diameter is expanded by aggregation is higher than the melting point of the original metal fine particles before aggregation. As a result, the temperature required for joining the electrodes in the next process rises, causing damage to the semiconductor device.

Next, as shown in FIG. 4D, a metal fine particle layer 61 is formed on a support member 60 made of, for example, a silicon substrate. The formation of the metal fine particle layer 61 is similar to the formation of the metal fine particle layer 51 described above. For example, a SAM film (self-assembled monomolecular film) is formed on the surface, and the thickness is about several to several hundred nm. You may carry out by spin-coating the solution which disperse | distributed the copper fine particle with a diameter on the supporting member 50. FIG. As the polymer constituting the SAM film, for example, alkanethiol having 7 or more carbon atoms may be used as in the formation of the metal fine particle layer 51 described above, and more specifically, coordination is performed on the surface of the copper fine particles. Then, 3- (6-mercaptohexyl) thiophene, which is known as a polymer capable of stabilizing the fine particles, may be used. By such a thiol group of the SAM film being coordinated to the surface of the metal fine particles, oxidation and aggregation of the metal fine particles can be prevented. In addition, the number of rotations and the processing time in the spin coating of the solution in which copper fine particles are dispersed are, for example, in the range from about 1000 rpm to about 5000 rpm, and from about 50 seconds to 300 seconds, as in the formation of the metal fine particle layer 51. You may set to the range to about second.

Next, after the metal fine particle layer 61 is formed on the support member 60 by spin coating, a heat treatment is performed at a temperature from about 60 ° C. to about 150 ° C., for example. Volatilize.

Next, a plurality of electrodes 21 made of, for example, copper are formed on a substrate 20 made of, for example, silicon. Each electrode 21 is provided at a position corresponding to each electrode 11 of the substrate 10. Here, the formation of the electrode 21 on the substrate 20 may be performed using, for example, an electroless plating method. Alternatively, for example, a through electrode is formed in the substrate 20 in advance, and then the substrate 20 is ground from the back surface (opposite surface of the element forming surface) to expose the front end portion of the through electrode. The part may be used as the electrode 21. In the present modification, the height of the electrodes 21 is, for example, about 5 μm, and the distance between the electrodes 21 is, for example, about 5 μm.

Next, as shown in FIG. 4E, the tops of the electrodes 21 of the substrate 20 are brought into pressure contact with the metal fine particle layer 61 on the support member 60 at a pressure of 2 MPa, for example, for about 2 minutes. Thereafter, as shown in FIG. 4 (f), when the top of each electrode 21 of the substrate 20 is separated from the metal fine particle layer 61 on the support member 60, a part of the metal fine particle layer 61 adheres on the top of each electrode 21. Thus, the adhesion layer 22 made of metal fine particles constituting the metal fine particle layer 61 is formed on the top of each electrode 21.

In addition, when the top part of each electrode 21 of the board | substrate 20 is crimped | bonded to the metal fine particle layer 61 on the supporting member 60, a part of metal fine particle layer 61 is ensured on the top part of each electrode 21 by performing heat processing. It becomes possible to adhere to. The temperature of this heat treatment may be set, for example, in a range from about 50 ° C. to about 200 ° C., but is not limited to this temperature range. However, it is desirable to set the temperature of the heat treatment to about 200 ° C. or less. The reason is that when a part of the metal fine particle layer 61 is attached on the top of each electrode 21 at a temperature exceeding about 200 ° C., the metal fine particles constituting a part of the attached metal fine particle layer 61 This is because some of them may melt and cause aggregation. When metal fine particles having an enlarged particle diameter are generated by such aggregation, the melting point of the metal fine particles becomes higher depending on the particle size. In other words, the melting point of the metal fine particles whose particle diameter is expanded by aggregation is higher than the melting point of the original metal fine particles before aggregation. As a result, the temperature required for joining the electrodes in the next process rises, causing damage to the semiconductor device.

Next, as shown in FIG. 4G, the substrate 10 on which the adhesion layer 12 made of metal fine particles is formed on the top of each electrode 11, and the adhesion layer 22 made of metal fine particles on the top of each electrode 21. After the formed substrate 20 is arranged so that each electrode 11 and each electrode 21 face each other, as shown in FIG. 4 (h), each electrode 11 and The electrodes 22 are bonded to each other at a pressure of 5 MPa, for example, for about 5 minutes. Thereby, the board | substrate 10 and the board | substrate 20 are laminated | stacked.

Note that an adhesive may be applied between the substrate 10 and the substrate 20 when the substrate 10 and the substrate 20 are laminated. Specifically, an adhesive called underfill may be filled between the substrate 10 and the substrate 20. In addition, as a method for filling the adhesive, after the electrodes are bonded by the adhesion layer 12 made of metal fine particles, the underfill material is sucked into the gap between the substrate 10 and the substrate 20 using surface tension. Before forming the bonding between the electrodes by the adhesion layer 12 made of metal fine particles, or by applying an adhesive to at least one of the substrate 10 and the substrate 20 in advance. A method of curing the adhesive after bonding may be used.

Moreover, in this modification, when each electrode 11 and each electrode 22 are pressure-bonded to each other, for example, heat treatment may be performed at a temperature of about 150 ° C. or higher. As a result, the SAM film covering the surface of each metal fine particle constituting the adhesion layer 12 and the adhesion layer 22 is detached, and the metal surface of each metal fine particle is exposed. For this reason, melting of each metal fine particle occurs even at a relatively low temperature, and as a result, each metal fine particle is integrated, so that the electrode 11 and the electrode 21 can be reliably bonded via the adhesion layer 12 and the adhesion layer 22. Can do. At this time, since the adhesion layer 12 and the adhesion layer 22 each made of metal fine particles cause plastic deformation, when the distance between the electrode 11 and the electrode 21 is relatively narrow, the adhesion layer 12 and the adhesion layer each made of metal fine particles, respectively. When 22 is relatively greatly deformed and the distance between the electrode 11 and the electrode 12 is relatively wide, the adhesion layer 12 and the adhesion layer 22 made of metal fine particles are respectively relatively deformed. That is, in the bonding between each electrode 11 and the electrode 21, the adhesion layer 12 and the adhesion layer 22 each made of metal fine particles act as a buffer region. For this reason, even if the space | interval of each electrode 11 and each electrode 21 varies, each electrode 11 and each electrode 21 can be reliably joined by crimping | compression-bonding, Therefore Formation of highly reliable electrode joining is high yield. Is possible.

The semiconductor device of this modification manufactured by the method described above corresponds to the substrate 10, the plurality of electrodes 11 formed on the substrate 10, the substrate 20, and each electrode 11 of the substrate 10 on the substrate 20. The adhesion layer 12 and the adhesion layer 22 are formed by integrating each electrode 11 and each electrode 21 corresponding to each electrode 11 by melting a plurality of metal fine particles. Thus, the substrate 10 and the substrate 20 are laminated.

According to this modification, when each electrode 11 on the substrate 10 and each electrode 21 on the substrate 20 are connected, the adhesion layer 12 made of metal fine particles and the adhesion between each electrode 11 and each electrode 21. Layer 22 is interposed. For this reason, the distance between each electrode 11 on the substrate 10 and each electrode 21 on the substrate 20 varies due to the height variation of the electrode 11 or the electrode 21 or the thickness variation of the substrate 10 or the substrate 20. Even if there is, the adhesion layer 12 and the adhesion layer 22 made of metal fine particles are deformed according to the distance between the electrodes, so that each electrode 11 on the substrate 10 and each electrode 21 on the substrate 20 are securely connected. Can be joined. Further, by bringing the tops of the electrodes 11 and 21 on the substrates 10 and 20 into contact with the metal fine particle layers 51 and 61 formed on the support members 50 and 60 in advance, In order to form the adhesion layer 12 and the adhesion layer 22 each made of metal fine particles on the top, the throughput is improved as compared with the case where a liquid material containing metal particles is arranged on each electrode using an ink jet device. And cost can be reduced.

Therefore, according to this modification, it is possible to easily prevent a bonding failure between each electrode 11 on the substrate 10 and each electrode 21 on the substrate 20.

In this modification, the particle size of the metal fine particles constituting the metal fine particle layers 51 and 61 may be 1 mm (0.1 nm) or more and 1 μm (1000 nm) or less, more preferably several mm. Above and several hundred nm or less may be sufficient. In particular, when the average particle diameter of the metal fine particles constituting the metal fine particle layers 51 and 61 is 50 nm or less, the metal fine particles can be melted in a low temperature process of, for example, about 350 ° C. or less, thereby reducing damage to the semiconductor device. However, the bonding strength between the electrodes can be increased. Such an effect can be obtained if the particle diameters of the majority of the metal fine particles in the metal fine particle layers 51 and 61 are about 50 nm or less. In other words, metal fine particles having a particle diameter exceeding 50 nm may be present in the metal fine particle layers 51 and 61. More preferably, the average particle diameter of the metal fine particles constituting the metal fine particle layers 51 and 61 may be about 40 nm or less in order to melt the metal fine particles in a low temperature process of about 250 ° C. or less, for example. Also in this case, the particle diameters of the majority of the metal fine particles in the metal fine particle layers 51 and 61 may be about 40 nm or less, and even if metal fine particles having a particle diameter exceeding 40 nm exist in the metal fine particle layers 51 and 61. Good. The above relationship between the particle size and the process temperature is for the case where the metal fine particles constituting the metal fine particle layers 51 and 61 are copper fine particles. However, the same tendency (decrease in melting point accompanying the refinement of particle size) is observed.

Further, in the present modification, at least one of the metal fine particle layers 51 and 61 may contain fine particles having a hardness higher than that of each electrode 11 and each electrode 21. In this way, when each electrode 11 on the substrate 10 and each electrode 21 on the substrate 20 are joined, the surface of each electrode 11 or the natural oxide film or the contamination layer formed on the surface of each electrode 21 is Since the surface of each electrode 11 and the surface of each electrode 21 can be exposed by removing by the polishing effect by the fine particles having higher hardness than the electrode 11 and each electrode 21, the bonding yield between each electrode 11 and each electrode 21 can be further increased. Can be improved.

Further, in the present modification, at least one of the metal fine particle layers 51 and 61 is a metal fine particle selected from one or two or more of a metal group composed of copper, silver, gold, platinum, nickel, and the like, Alternatively, it may contain fine particles of an alloy of two or more metals selected from the metal group. In this case, at least one of the metal fine particle layers 51 and 61 is higher in hardness than any metal of copper, silver, and gold (that is, the Mohs hardness is 4 or more) and has a conductivity of 1 × 10 ⁷ / mΩ or more. It may further contain other metal fine particles. In this way, when each electrode 11 on the substrate 10 and each electrode 21 on the substrate 20 are joined, the surface of each electrode 11 and the natural oxide film, the contamination layer, etc. formed on the surface of each electrode 21 are Since the surface of each electrode 11 and the surface of each electrode 21 can be exposed by the polishing effect of other metal fine particles having a high hardness, the bonding yield between each electrode 11 and each electrode 21 can be further improved. it can. Here, the other metal having high hardness is one or more selected from the metal group consisting of tungsten, cobalt, nickel, ruthenium, rhodium, iridium, molybdenum and osmium, or the metal It may be an alloy of two or more metals selected from the metal group.

In this modification, copper is used as the material of the electrode 11 and the electrode 21, but the material of the electrode 11 and the electrode 21 is not particularly limited as long as the material has conductivity. For example, as a material of the electrode 11 and the electrode 21, a copper alloy or other metal may be used instead of copper. Further, the material of the electrode 11 and the material of the electrode 21 may be different.

In this modification, silicon substrates are used as the substrate 10 and the substrate 20, but the substrate materials of the substrate 10 and the substrate 20 are not particularly limited, and the material of the substrate 10 and the material of the substrate 20 are not limited. And may be different.

In this modification, silicon substrates are used as the support member 50 and the support member 60. However, the support member 50 and the support member 60 are particularly limited to a substrate or the like as long as a metal fine particle layer can be formed. However, the support member 50 and the support member 60 may be different types of members.

In addition, the semiconductor device and the manufacturing method thereof according to this modification include chip-chip stacking (stacking of chip-state semiconductor devices obtained by wafer dicing), chip-wafer stacking (chip-state semiconductor device and before dicing) The semiconductor device can be applied to any of the semiconductor devices in which the wafer state semiconductor device is laminated) or the wafer-wafer lamination (lamination of the wafer state semiconductor devices) and the manufacturing method thereof.

As described above, in the semiconductor device and the manufacturing method thereof according to the present invention, in the connection between the stacked substrates, the bonding failure between the electrodes of each substrate due to the variation in the height of the electrodes, the variation in the thickness of the substrates, and the like. In particular, it is useful as a method for bonding electrodes using metal fine particles in a chip-chip stacked, chip-wafer stacked or wafer-wafer stacked semiconductor device.

10, 20 Substrate 11, 21 Electrode 12, 22 Adhesive layer 50, 60 Support member 51, 61 Metal fine particle layer

Claims (39)

A first substrate on which a plurality of first electrodes are formed; a second substrate on which a plurality of second electrodes are formed at positions corresponding to the first electrodes of the first substrate; Is a method of manufacturing a semiconductor device in which
Forming a first metal fine particle layer on the first support member (a);
The top of each first electrode of the first substrate is brought into contact with the first metal fine particle layer on the first support member so that the first metal fine particles are formed on the top of each first electrode. Forming a first adhesion layer made of metal fine particles constituting the first metal fine particle layer on the top of each first electrode by adhering a part of the layer (b);
After the step (b), the first electrodes and the second electrodes corresponding to the first electrodes are opposed to each other, and the first electrodes are interposed through the first adhesion layer. A step (c) of laminating the first substrate and the second substrate by connecting the second electrode corresponding to the first electrode and the second electrode corresponding to the first electrode. A method of manufacturing a semiconductor device. In the manufacturing method of the semiconductor device according to claim 1,
In the step (c), the first adhesion layer is formed by performing heat treatment while pressing the first electrodes and the second electrodes corresponding to the first electrodes. Each of the metal fine particles to be melted and integrated, thereby joining each first electrode and each second electrode corresponding to each first electrode Manufacturing method. In the manufacturing method of the semiconductor device according to claim 2,
The method of manufacturing a semiconductor device, wherein the temperature of the heat treatment in the step (c) is 150 ° C. or higher. The method for manufacturing a semiconductor device according to any one of claims 1 to 3,
In the step (a), the surface of the metal fine particles constituting the first metal fine particle layer is coated with a first organic material film. In the manufacturing method of the semiconductor device according to claim 4,
In the step (c), the method of manufacturing a semiconductor device, wherein the first organic material film covering the surface of the metal fine particles constituting the first adhesion layer is detached from the surface. In the manufacturing method of the semiconductor device according to claim 4 or 5,
The method of manufacturing a semiconductor device, wherein the first organic material film is a SAM film. In the manufacturing method of the semiconductor device according to claim 6,
The method of manufacturing a semiconductor device, wherein the SAM film contains alkanethiol. The method of manufacturing a semiconductor device according to any one of claims 1 to 7,
In the step (b), the semiconductor device manufacturing method is characterized in that heat treatment is performed while the top of each first electrode is pressed against the first metal fine particle layer. In the manufacturing method of the semiconductor device according to claim 8,
The method for manufacturing a semiconductor device, wherein the temperature of the heat treatment in the step (b) is 50 ° C. or higher and 200 ° C. or lower. The method of manufacturing a semiconductor device according to any one of claims 1 to 9,
The method of manufacturing a semiconductor device, wherein the metal fine particles constituting the first metal fine particle layer have a particle diameter of 1 to 1 μm. The method of manufacturing a semiconductor device according to any one of claims 1 to 10,
The method of manufacturing a semiconductor device, wherein the first metal fine particle layer includes fine particles having hardness higher than that of each of the first electrodes and each of the second electrodes. The method of manufacturing a semiconductor device according to any one of claims 1 to 11,
The first metal fine particle layer may be one or more metal fine particles selected from a metal group composed of copper, silver and gold, or two or more metal fine particles selected from the metal group. A method for manufacturing a semiconductor device, comprising fine particles of a metal alloy. In the manufacturing method of the semiconductor device according to claim 12,
The first metal fine particle layer further includes fine particles of another metal having a higher hardness than any one of copper, silver and gold and having an electric conductivity of 1 × 10 ⁷ / mΩ or more. Device manufacturing method. In the manufacturing method of the semiconductor device according to claim 13,
The other metal is selected from one or more metals selected from the group consisting of tungsten, cobalt, nickel, ruthenium, rhodium, iridium, molybdenum and osmium, or selected from the group of metals. A method of manufacturing a semiconductor device, which is an alloy of two or more metals. The method of manufacturing a semiconductor device according to any one of claims 1 to 14,
Before the step (c),
A step (d) of forming a second metal fine particle layer on the second support member;
The top of each second electrode of the second substrate is brought into contact with the second metal fine particle layer on the second support member so that the second metal fine particles are formed on the top of each second electrode. A step (e) of forming a second adhesion layer made of metal fine particles constituting the second metal fine particle layer on the top of each second electrode by adhering a part of the layer; Prepared,
In the step (c), the first electrodes and the second electrodes corresponding to the first electrodes are connected via the first adhesive layer and the second adhesive layer. Thus, the method of manufacturing a semiconductor device, wherein the first substrate and the second substrate are stacked. In the manufacturing method of the semiconductor device according to claim 15,
In the step (d), the surface of the metal fine particles constituting the second metal fine particle layer is coated with a second organic material film. In the manufacturing method of the semiconductor device according to claim 16,
In the step (c), the method of manufacturing a semiconductor device, wherein the second organic material film covering the surface of the metal fine particles constituting the second adhesion layer is detached from the surface. In the manufacturing method of the semiconductor device according to claim 16 or 17,
The method of manufacturing a semiconductor device, wherein the second organic material film is a SAM film. In the manufacturing method of the semiconductor device according to claim 18,
The method of manufacturing a semiconductor device, wherein the SAM film contains alkanethiol. The method of manufacturing a semiconductor device according to any one of claims 15 to 19,
In the step (e), a semiconductor device manufacturing method is characterized in that heat treatment is performed while the top of each second electrode is pressed against the second metal fine particle layer. In the manufacturing method of the semiconductor device according to claim 20,
The method for manufacturing a semiconductor device, wherein the temperature of the heat treatment in the step (e) is 50 ° C. or higher and 200 ° C. or lower. The method for manufacturing a semiconductor device according to any one of claims 15 to 21,
The method of manufacturing a semiconductor device, wherein the metal fine particles constituting the second metal fine particle layer have a particle size of 1 to 1 μm. The method for manufacturing a semiconductor device according to any one of claims 15 to 22,
The method for manufacturing a semiconductor device, wherein the second metal fine particle layer includes fine particles having hardness higher than that of the first electrodes and the second electrodes. The method of manufacturing a semiconductor device according to any one of claims 15 to 23,
The second metal fine particle layer may be one or more metal fine particles selected from a metal group composed of copper, silver and gold, or two or more metal fine particles selected from the metal group. A method for manufacturing a semiconductor device, comprising fine particles of a metal alloy. In the manufacturing method of the semiconductor device according to claim 24,
The second metal fine particle layer further includes fine particles of another metal having higher hardness than any one of copper, silver, and gold and having an electric conductivity of 1 × 10 ⁷ / mΩ or more. Device manufacturing method. In the manufacturing method of the semiconductor device according to claim 25,
The other metal is selected from one or more metals selected from the group consisting of tungsten, cobalt, nickel, ruthenium, rhodium, iridium, molybdenum and osmium, or selected from the group of metals. A method of manufacturing a semiconductor device, which is an alloy of two or more metals. In the method of manufacturing a semiconductor device according to any one of claims 1 to 26,
At least one of each said 1st electrode and each said 2nd electrode is a front-end | tip part of a penetration electrode, The manufacturing method of the semiconductor device characterized by the above-mentioned. The method for manufacturing a semiconductor device according to any one of claims 1 to 27,
At least one of each said 1st electrode and each said 2nd electrode is comprised from the metal, The manufacturing method of the semiconductor device characterized by the above-mentioned. The method of manufacturing a semiconductor device according to claim 28.
The method of manufacturing a semiconductor device, wherein the metal constituting at least one of the first electrodes and the second electrodes is copper or a copper alloy. A first substrate;
A plurality of first electrodes formed on the first substrate;
A second substrate;
A plurality of second electrodes formed on the second substrate at positions corresponding to the first electrodes of the first substrate;
The first electrodes and the second electrodes corresponding to the first electrodes are connected via a layer formed by melting and integrating a plurality of metal fine particles, whereby the A semiconductor device, wherein a first substrate and the second substrate are stacked. The semiconductor device according to claim 30, wherein
The semiconductor device according to claim 1, wherein a particle diameter of the plurality of metal fine particles is 1 μm or more and 1 μm or less. The semiconductor device according to claim 30 or 31,
The semiconductor device, wherein the plurality of metal fine particles include fine particles having hardness higher than that of each of the first electrodes and each of the second electrodes. The semiconductor device according to any one of claims 30 to 32,
The plurality of metal fine particles may be one or more metal fine particles selected from a metal group composed of copper, silver, and gold, or two or more metal particles selected from the metal group. A semiconductor device comprising fine particles of an alloy. The semiconductor device according to claim 33.
The plurality of metal fine particles further includes fine particles of another metal having a higher hardness than any one of copper, silver, and gold and having an electric conductivity of 1 × 10 ⁷ / mΩ or more. The semiconductor device according to claim 34, wherein
The other metal is selected from one or more metals selected from the group consisting of tungsten, cobalt, nickel, ruthenium, rhodium, iridium, molybdenum and osmium, or selected from the group of metals. A semiconductor device comprising an alloy of two or more metals. The semiconductor device according to any one of claims 30 to 35,
At least one of each said 1st electrode and each said 2nd electrode is a front-end | tip part of a penetration electrode, The semiconductor device characterized by the above-mentioned. The semiconductor device according to any one of claims 30 to 36,
At least one of each said 1st electrode and each said 2nd electrode is comprised from the metal, The semiconductor device characterized by the above-mentioned. 38. The semiconductor device according to claim 37, wherein
The semiconductor device, wherein the metal constituting at least one of the first electrodes and the second electrodes is copper or a copper alloy. The semiconductor device according to any one of claims 30 to 38,
Each of the first electrodes is formed so as to protrude from the surface of the first substrate,
Each of the second electrodes is formed so that the upper surface of each of the second electrodes is substantially flush with the surface of the second substrate.

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