WO2012079816A1 - Generator apparatus with improved polarity reversal protection - Google Patents
Generator apparatus with improved polarity reversal protection Download PDFInfo
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- WO2012079816A1 WO2012079816A1 PCT/EP2011/068648 EP2011068648W WO2012079816A1 WO 2012079816 A1 WO2012079816 A1 WO 2012079816A1 EP 2011068648 W EP2011068648 W EP 2011068648W WO 2012079816 A1 WO2012079816 A1 WO 2012079816A1
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- rectifier
- generator device
- schottky diode
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- H02J7/64—
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/14—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries for charging batteries from dynamo-electric generators driven at varying speed, e.g. on vehicle
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/02—Conversion of AC power input into DC power output without possibility of reversal
- H02M7/04—Conversion of AC power input into DC power output without possibility of reversal by static converters
- H02M7/12—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M7/219—Conversion of AC power input into DC power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only in a bridge configuration
Definitions
- the invention relates to a generator device with improved Verpolfestmaschine. State of the art
- AC bridges for alternators (alternators), AC bridges (rectifiers) are used for rectification.
- B6 bridges contain as rectifying elements 6 pn semiconductor diodes ZD1 to ZD6 made of silicon.
- Such a rectifier is shown in FIG. It is connected to the phase terminals U, V and W of a generator G and is together with the generator G part of a generator device.
- the semiconductor diodes of the rectifier are usually designed as Z-diodes.
- alternators with a different number of phases are also used.
- the bridges used as rectifiers are then constructed accordingly.
- a complete generator system further includes a voltage regulator, by means of which it is ensured that the voltage rectified by the rectifier has a specific value, for example 14.3 V.
- the generator device has an interference suppression capacitor of, for example, 2.2, which is connected between the positive DC voltage connection B + of the rectifier and ground.
- the regulator and the suppression capacitor are not shown in FIG.
- the Zener diodes are designed for operation at high currents in the flow direction with current densities up to about 500 A / cm 2 and high temperatures. Typically, the voltage drop in the flow direction, the forward voltage UF, is about 1 volt at the high currents used. When operating in the reverse direction, however, only a very small reverse current IR flows up to a breakdown voltage UZ.
- the diodes are usually mounted in special housing, so-called press-fit housing, as described in DE 195 49 202 B4.
- Press-fit diodes have on one side a provided with a knurling Einpresssockel, which is pressed into a corresponding recess of a rectifier assembly.
- the press-in base takes over a permanent thermal and electrical
- the other side has a connecting wire which is electrically contacted with other components of the rectifier, for example by soldering or welding.
- Insertion diodes are used for many years as a robust, reliable and cheap diodes in rectifiers of motor vehicle generators. In practice, however, often impermissible interventions and changes to the electrical system of a motor vehicle are made. For example, it sometimes happens during repair and maintenance that attempts are made to connect the battery of the respective motor vehicle with the wrong polarity. Then a very high current flows from the positive terminal of the battery via the now forward-biased diodes. Since the battery is charged only with the two forward voltages of the diodes of the rectifier except for line and contact resistance, a very high current flows. The power loss generated increases the temperature at the diodes up to their destruction limit.
- a permanent operation with polarity reversed battery is therefore not possible in principle.
- the generator device survive a short-term reverse polarity.
- a rectifier is required to withstand polarity reversal at 600 A unscathed for a period of 5 seconds.
- the rectifier protects the other electronic systems of the vehicle in that it limits the voltage at the electrical system to low values during reverse polarity. For example, it is desirable that in case of a reverse polarity during a
- the voltage drop essentially consists of the voltage drop across the diodes of the rectifier.
- three chains of two diodes connected in series are connected in parallel.
- generators with other whose number of phases is the number of chains adapted accordingly.
- a generator device having the features specified in claim 1 has the advantage that the Verpolfestmaschine the generator device is improved. In comparison to known generator devices, either the reverse polarity voltage is smaller at a fixed preset polarity reversal current, or the reverse polarity current, which leads to destruction of the diodes in known generator devices, becomes higher.
- This advantage is achieved essentially by the fact that Schottky diodes with low forward voltage are used instead of common diode in rectifiers, which represent a pn-semiconductor structure.
- TM BS trench MOS barrier Schottky diode
- This arrangement has the advantage that the forward voltage can be set lower than with pn diodes. For example, a forward voltage can be selected 20% -40% lower than conventional pn diodes.
- FIG. 2 shows, as a first exemplary embodiment, a circuit diagram of the rectifier of a pinned 3-phase generator device.
- Schottky diodes S1 to S6 are used with lower forward voltages.
- TMBS trench MOS barrier Schottky diodes
- TMBS diodes have a lower voltage dependence of the reverse current than simple Schottky diodes.
- the TMBS or Schottky diodes are in turn advantageously packaged in Einpressdiodengephinen.
- the rectifier can be operated for a longer period in the event of damage before damage to the diodes occurs.
- FIG. 3 A second embodiment of a puffed generator device is shown in FIG.
- the rectifier of the generator device is a synchronous rectifier.
- the diodes are replaced by active power switches, which are realized as a chip.
- MOSFETs MOS field effect transistors
- a synchronous rectifier still requires electronics for driving the transistors. This control electronics is not shown in FIG. 3 for reasons of clarity.
- inverse diodes are integrated. They represent pn diodes and also limit the voltage in case of reverse polarity.
- the transistors T1 to T6 each have a TMBS diode S1 to S6 connected in parallel.
- the diodes can be thermally particularly advantageous in turn be packed in Einpressdiodengephinen.
- other types of packaging are possible depending on the type of mounting of the transistors. in the
- MOSFETs are used as transistors in which inverse diodes are integrated in TMBS technology.
- Such MOSFETs are also referred to as syncfet and are described, for example, as such in US 2005/0199918 A1.
- a generator device as shown in FIG. 4 is used.
- polarity reversal protection diodes S7 and S8 are connected in a particularly advantageous manner directly between the positive DC voltage terminal B + of the rectifier and ground.
- two Schottky or TMBS diodes S7 and S8 are connected in parallel.
- fewer or more than 2 diodes may be connected in parallel.
- TJBS trench junction barrier Schottky diode
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Abstract
Description
Beschreibung Titel Description title
Generatorvorrichtung mit verbesserter Verpolfestigkeit Generator device with improved bump strength
Die Erfindung betrifft eine Generatorvorrichtung mit verbesserter Verpolfestigkeit. Stand der Technik The invention relates to a generator device with improved Verpolfestigkeit. State of the art
Bei Wechselstromgeneratoren (Lichtmaschinen) werden zur Gleichrichtung Wechselstrombrücken (Gleichrichter) verwendet. Beispielsweise werden bei 3-phasigen Drehstromsystemen sogenannte B6-Brücken verwendet, die als gleichrichtende Elemente 6 pn-Halbleiterdioden ZD1 bis ZD6 aus Silizium enthalten. Ein derartiger Gleichrichter ist in der Figur 1 gezeigt. Er ist an die Phasenanschlüsse U, V und W eines Generators G angeschlossen und ist zusammen mit dem Generator G Bestandteil einer Generatorvorrichtung. Die Halbleiterdioden des Gleichrichters werden üblicherweise als Z-Dioden ausgelegt. Neben 3-phasigen Systemen werden auch Wechselstromgeneratoren mit anderer Phasenzahl verwendet. Die als Gleichrichter verwendeten Brücken sind dann entsprechend aufgebaut. Ein komplettes Generatorsystem enthält neben dem Generator und dem Gleichrichter des Weiteren einen Spannungsregler, mittels dessen sichergestellt wird, dass die vom Gleichrichter gleichgerichtete Spannung einen bestimmten Wert, beispielsweise 14,3 V, aufweist. Ferner weist die Generatorvorrichtung einen Entstörkondensator von beispielsweise 2,2 auf, der zwischen den positiven Gleich- spannungsanschluss B+ des Gleichrichters und Masse geschaltet ist. Der Regler und der Entstörkondensator sind in der Fig. 1 nicht eingezeichnet. Die Z-Dioden sind für einen Betrieb bei hohen Strömen in Flussrichtung mit Stromdichten bis etwa 500 A/cm2 und hohen Temperaturen ausgelegt. Typischerweise beträgt der Spannungsabfall in Flussrichtung, die Flussspannung UF, bei den verwendeten hohen Strömen etwa 1 Volt. Bei Betrieb in Sperrrichtung fließt dagegen nur ein sehr kleiner Sperrstrom IR bis zu einer Durchbruchsspannung UZ. Die Dioden werden in der Regel in spezielle Gehäuse, sogenannte Einpressgehäuse, montiert, wie es in der DE 195 49 202 B4 beschrieben ist. Einpressdioden weisen auf der einen Seite einen mit einer Rändelung versehenen Einpresssockel auf, der in eine entsprechende Aussparung einer Gleichrichteranordnung eingepresst ist. Der Ein- presssockel übernimmt dabei gleichzeitig eine dauerhafte thermische und elektrischeFor alternators (alternators), AC bridges (rectifiers) are used for rectification. For example, in 3-phase three-phase systems, so-called B6 bridges are used, which contain as rectifying elements 6 pn semiconductor diodes ZD1 to ZD6 made of silicon. Such a rectifier is shown in FIG. It is connected to the phase terminals U, V and W of a generator G and is together with the generator G part of a generator device. The semiconductor diodes of the rectifier are usually designed as Z-diodes. In addition to 3-phase systems, alternators with a different number of phases are also used. The bridges used as rectifiers are then constructed accordingly. In addition to the generator and the rectifier, a complete generator system further includes a voltage regulator, by means of which it is ensured that the voltage rectified by the rectifier has a specific value, for example 14.3 V. Furthermore, the generator device has an interference suppression capacitor of, for example, 2.2, which is connected between the positive DC voltage connection B + of the rectifier and ground. The regulator and the suppression capacitor are not shown in FIG. The Zener diodes are designed for operation at high currents in the flow direction with current densities up to about 500 A / cm 2 and high temperatures. Typically, the voltage drop in the flow direction, the forward voltage UF, is about 1 volt at the high currents used. When operating in the reverse direction, however, only a very small reverse current IR flows up to a breakdown voltage UZ. The diodes are usually mounted in special housing, so-called press-fit housing, as described in DE 195 49 202 B4. Press-fit diodes have on one side a provided with a knurling Einpresssockel, which is pressed into a corresponding recess of a rectifier assembly. At the same time, the press-in base takes over a permanent thermal and electrical
Verbindung der Gleichrichterdiode mit der Gleichrichteranordnung. Die andere Seite weist einen Anschlussdraht auf, der elektrisch beispielsweise durch Löten oder Schweißen fest mit anderen Komponenten des Gleichrichters kontaktiert ist. Connection of the rectifier diode with the rectifier arrangement. The other side has a connecting wire which is electrically contacted with other components of the rectifier, for example by soldering or welding.
Einpressdioden werden seit vielen Jahren als robuste, zuverlässige und günstige Dioden in Gleichrichtern von Kraftfahrzeug-Generatoren eingesetzt. In der Praxis werden aber des öfteren unzulässige Eingriffe und Veränderungen am Bordnetz eines Kraftfahrzeugs vorgenommen. So kommt es beispielsweise bei Reparatur- und Wartungsarbeiten gelegentlich vor, dass versucht wird, die Batterie des jeweiligen Kraftfahrzeugs mit falscher Polarität anzuschließen. Dann fließt ein sehr hoher Strom von der Plusklemme der Batterie über die nun in Durchlassrichtung gepolten Dioden. Da dabei die Batterie außer mit Leitungs- und Übergangswiderständen nur mit den beiden Durchlassspannungen der Dioden des Gleichrichters belastet wird, fließt ein sehr hoher Strom. Die erzeugte Verlustleistung erhöht die Temperatur an den Dioden bis zu Ihrer Zerstörungsgrenze. Insertion diodes are used for many years as a robust, reliable and cheap diodes in rectifiers of motor vehicle generators. In practice, however, often impermissible interventions and changes to the electrical system of a motor vehicle are made. For example, it sometimes happens during repair and maintenance that attempts are made to connect the battery of the respective motor vehicle with the wrong polarity. Then a very high current flows from the positive terminal of the battery via the now forward-biased diodes. Since the battery is charged only with the two forward voltages of the diodes of the rectifier except for line and contact resistance, a very high current flows. The power loss generated increases the temperature at the diodes up to their destruction limit.
Eine dauerhafter Betrieb bei verpolter Batterie ist deshalb prinzipiell nicht möglich. Allerdings wird im Allgemeinen zumindest gefordert, dass die Generatorvorrichtung eine kurzfristige Verpolung übersteht. Beispielsweise wird für einen Gleichrichter gefordert, dass er für eine Dauer von 5 Sekunden eine Verpolung bei 600 A unbeschadet übersteht. A permanent operation with polarity reversed battery is therefore not possible in principle. However, it is generally at least required that the generator device survive a short-term reverse polarity. For example, a rectifier is required to withstand polarity reversal at 600 A unscathed for a period of 5 seconds.
Dabei schützt der Gleichrichter die übrigen elektronischen Systeme des Fahrzeugs dadurch, dass er während der Verpolung die Spannung am Bordnetz auf niedrige Werte begrenzt. Beispielsweise wird angestrebt, dass bei einer Verpolung während einerThe rectifier protects the other electronic systems of the vehicle in that it limits the voltage at the electrical system to low values during reverse polarity. For example, it is desirable that in case of a reverse polarity during a
Dauer von 100 ms nur eine Spannung von bis zu 2 V am Bordnetz auftritt. Duration of 100 ms only a voltage of up to 2 V occurs on the electrical system.
Von den Spannungsabfällen an den Leitungs- und Übergangswiderständen abgesehen besteht der Spannungsabfall im Wesentlichen aus dem Flussspannungsabfall an den Dioden des Gleichrichters. Dabei sind bei einem 3-phasigen Generator drei Ketten von jeweils zwei in Reihe geschalteten Dioden parallel geschaltet. Bei Generatoren mit an- deren Phasenzahlen ist die Anzahl der Ketten entsprechend angepasst. Apart from the voltage drops at the line and contact resistances, the voltage drop essentially consists of the voltage drop across the diodes of the rectifier. In this case, in a 3-phase generator, three chains of two diodes connected in series are connected in parallel. For generators with other whose number of phases is the number of chains adapted accordingly.
Bei einem festen Verpolstrom von beispielsweise 600 A ist es günstig, Dioden mit niedriger Flussspannung zu verwenden. At a fixed reverse polarity of, for example, 600 A, it is beneficial to use low-voltage diodes.
Offenbarung der Erfindung Disclosure of the invention
Eine Generatorvorrichtung mit den im Anspruch 1 angegebenen Merkmalen weist den Vorteil auf, dass die Verpolfestigkeit der Generatorvorrichtung verbessert ist. Im Ver- gleich zu bekannten Generatorvorrichtungen wird dabei entweder die Verpolspannung bei fest vorgegebenem Verpolstrom kleiner oder es wird der Verpolstrom, der bei bekannten Generatorvorrichtungen zu einer Zerstörung der Dioden führt, höher. A generator device having the features specified in claim 1 has the advantage that the Verpolfestigkeit the generator device is improved. In comparison to known generator devices, either the reverse polarity voltage is smaller at a fixed preset polarity reversal current, or the reverse polarity current, which leads to destruction of the diodes in known generator devices, becomes higher.
Dieser Vorteil wird im Wesentlichen dadurch erreicht, dass an Stelle von üblichen Dio- den in Gleichrichtern, die eine pn-Halbleiterstruktur darstellen, Schottkydioden mit niedriger Flussspannung eingesetzt werden. Insbesondere wird vorgeschlagen eine besonders vorteilhafte Trench-MOS-Barrier-Schottkydiode (TM BS) - also eine Kombination von Schottky-Diode und Trench-MOS-Struktur - zu verwenden. . Diese Anordnung hat den Vorteil, dass die Flussspannung niedriger als bei pn-Dioden eingestellt werden kann. Beispielsweise kann eine Flussspannung um 20% - 40% niedriger als bei herkömmlichen pn-Dioden gewählt werden. This advantage is achieved essentially by the fact that Schottky diodes with low forward voltage are used instead of common diode in rectifiers, which represent a pn-semiconductor structure. In particular, it is proposed to use a particularly advantageous trench MOS barrier Schottky diode (TM BS) - ie a combination of Schottky diode and trench MOS structure. , This arrangement has the advantage that the forward voltage can be set lower than with pn diodes. For example, a forward voltage can be selected 20% -40% lower than conventional pn diodes.
Die Fig. 2 zeigt als ein erstes Ausführungsbeispiel ein Schaltbild des Gleichrichters einer verpolfesten 3-phasigen Generatorvorrichtung. Dabei sind anstelle der üblichen pn- Dioden Schottkydioden S1 bis S6 mit niedrigeren Flussspannungen eingesetzt. ImFIG. 2 shows, as a first exemplary embodiment, a circuit diagram of the rectifier of a pinned 3-phase generator device. In this case, instead of the usual pn diodes Schottky diodes S1 to S6 are used with lower forward voltages. in the
Verpolfall ist deshalb der Spannungsabfall am Gleichrichter geringer. Als besonders vorteilhaft hat sich herausgestellt, an Stelle von einfachen Schottkydioden Trench- MOS-Barrier-Schottkydioden (TMBS) zu verwenden. TMBS-Dioden weisen eine geringere Spannungsabhängigkeit des Sperrstromes auf als einfache Schottkydioden. Die TMBS- bzw. Schottkydioden sind dabei wiederum in vorteilhafter Weise in Einpressdiodengehäusen verpackt. Infolge des geringeren Spannungsabfalls ist bei gleichbleibendem Strom auch der Leistungsabfall an den Dioden geringer. Die negative Spannung am Bordnetz ist damit geringer, d. h. die restliche Bordnetzelektronik wird besser geschützt. Außerdem kann der Gleichrichter länger im Verpolfall betrieben werden, be- vor Schäden an den Dioden auftreten. Ein zweites Ausführungsbeispiel einer verpolfesten Generatorvorrichtung ist in der Fig. 3 gezeigt. Bei diesem Ausführungsbeispiel handelt es sich bei dem Gleichrichter der Generatorvorrichtung um einen Synchrongleichrichter. Bei einem Synchrongleichrichter sind die Dioden durch aktive Leistungsschalter ersetzt, die als Chip realisiert sind. Als Leistungsschalter sind bei diesem Ausführungsbeispiel n-Kanal MOS-Feldeffekttransis- toren (MOSFETs) vorgesehen. Im Gegensatz zu Dioden benötigt ein Synchrongleichrichter noch eine Elektronik zur Ansteuerung der Transistoren. Diese Ansteuerelektronik ist in der Fig. 3 aus Gründen der Übersichtlichkeit nicht eingezeichnet. In den MOS-Transistorchips T1 bis T6 sind sogenannte Inversdioden integriert. Sie stellen pn-Dioden dar und begrenzen die Spannung im Falle einer Verpolung ebenfalls. Gemäß diesem Ausführungsbeispiel ist den Transistoren T1 bis T6 jeweils eine TMBS- Diode S1 bis S6 parallel geschaltet. Dabei können die Dioden thermisch besonders vorteilhaft wiederum in Einpressdiodengehäusen verpackt sein. Abhängig von der Montageart der Transistoren sind natürlich auch andere Verpackungsarten möglich. ImVerpolfall is therefore the voltage drop at the rectifier lower. It has proven particularly advantageous to use trench MOS barrier Schottky diodes (TMBS) instead of simple Schottky diodes. TMBS diodes have a lower voltage dependence of the reverse current than simple Schottky diodes. The TMBS or Schottky diodes are in turn advantageously packaged in Einpressdiodengehäusen. As a result of the lower voltage drop, the power drop at the diodes is also lower with the current remaining constant. The negative voltage on the electrical system is thus lower, ie the rest of the electrical system is better protected. In addition, the rectifier can be operated for a longer period in the event of damage before damage to the diodes occurs. A second embodiment of a puffed generator device is shown in FIG. In this embodiment, the rectifier of the generator device is a synchronous rectifier. In a synchronous rectifier, the diodes are replaced by active power switches, which are realized as a chip. As a circuit breaker n-channel MOS field effect transistors (MOSFETs) are provided in this embodiment. In contrast to diodes, a synchronous rectifier still requires electronics for driving the transistors. This control electronics is not shown in FIG. 3 for reasons of clarity. In the MOS transistor chips T1 to T6 so-called inverse diodes are integrated. They represent pn diodes and also limit the voltage in case of reverse polarity. According to this embodiment, the transistors T1 to T6 each have a TMBS diode S1 to S6 connected in parallel. In this case, the diodes can be thermally particularly advantageous in turn be packed in Einpressdiodengehäusen. Of course, other types of packaging are possible depending on the type of mounting of the transistors. in the
Falle einer Verpolung fällt ebenso wie beim oben beschriebenen Ausführungsbeispiel nur die geringe Flussspannung an den TMBS-Dioden ab. In the case of reverse polarity, as in the above-described embodiment, only the low forward voltage at the TMBS diodes drops.
In einem dritten Ausführungsbeispiel, das nicht in den Figuren dargestellt ist, werden als Transistoren MOSFETs verwendet, bei denen Inversdioden in TMBS-Technik integriert sind. Solche MOSFETs werden auch als Syncfet bezeichnet und sind beispielsweise als solche in der US 2005/0199918 A1 beschrieben. In a third embodiment, which is not shown in the figures, MOSFETs are used as transistors in which inverse diodes are integrated in TMBS technology. Such MOSFETs are also referred to as syncfet and are described, for example, as such in US 2005/0199918 A1.
Gemäß einem vierten Ausführungsbeispiel wird eine Generatorvorrichtung verwendet, wie sie in der Figur 4 gezeigt ist. Gemäß diesem Ausführungsbeispiel werden Verpol- schutzdioden S7 und S8 in besonders vorteilhafter Weise direkt zwischen den positiven Gleichspannungsanschluss B+ des Gleichrichters und Masse geschaltet. Im gezeigten Beispiel sind dabei zwei Schottky- oder TMBS-Dioden S7 und S8 parallel geschaltet. Natürlich können auch weniger oder mehr als 2 Dioden parallel geschaltet sein. According to a fourth embodiment, a generator device as shown in FIG. 4 is used. In this embodiment, polarity reversal protection diodes S7 and S8 are connected in a particularly advantageous manner directly between the positive DC voltage terminal B + of the rectifier and ground. In the example shown, two Schottky or TMBS diodes S7 and S8 are connected in parallel. Of course, fewer or more than 2 diodes may be connected in parallel.
Gemäß einem fünften Ausführungsbeispiel ist es in einer Anordnung, wie sie in der Figur 4 gezeigt ist, sogar möglich, an Stelle von Schottkydioden gewöhnliche pn-Dioden einzusetzen, da im Verpolfall keine Reihenschaltung von zwei Flussspannungen, son- dem nur eine Flussspannung an der Batterie anliegt. Selbstverständlich sind entsprechende Anordnungen auch für Generatoren mit anderer Phasenzahl möglich. According to a fifth embodiment, it is even possible in an arrangement as shown in FIG. 4 to use ordinary pn-diodes instead of Schottky diodes since, in the case of a polarity, there is no series connection of two forward voltages, but only one forward voltage to the battery is applied. Of course, corresponding arrangements are also possible for generators with a different number of phases.
Des Weiteren kann anstelle einer Trench-MOS-Barrier-Schottkydiode (TMBS) in ähnlich vorteilhafter Weise auch eine sogenannte Trench-Junction-Barrier-Schottky-Diode (TJBS) verwendet werden, wie sie als solche in der DE 10 2004 053 761 A1 beschrieben ist. Furthermore, instead of a trench MOS barrier Schottky diode (TMBS), a so-called trench junction barrier Schottky diode (TJBS) can also be used in a similarly advantageous manner as described as such in DE 10 2004 053 761 A1 is.
Claims
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010063041.1 | 2010-12-14 | ||
| DE102010063041A DE102010063041A1 (en) | 2010-12-14 | 2010-12-14 | Generator device with improved bump strength |
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| Publication Number | Publication Date |
|---|---|
| WO2012079816A1 true WO2012079816A1 (en) | 2012-06-21 |
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| PCT/EP2011/068648 Ceased WO2012079816A1 (en) | 2010-12-14 | 2011-10-25 | Generator apparatus with improved polarity reversal protection |
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| DE (1) | DE102010063041A1 (en) |
| WO (1) | WO2012079816A1 (en) |
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| CN114824301A (en) * | 2022-04-26 | 2022-07-29 | 国家电投集团氢能科技发展有限公司 | Anti-antipole nitrogen-carbon carrier catalyst for proton exchange membrane fuel cell and preparation method thereof |
| CN115050976A (en) * | 2022-06-09 | 2022-09-13 | 一汽解放汽车有限公司 | Anti-reversal electrode material, anti-reversal electrode slurry, preparation method and application thereof |
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| CN113497613A (en) * | 2020-04-03 | 2021-10-12 | 台达电子企业管理（上海）有限公司 | Composite switch circuit structure |
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| US20030040144A1 (en) * | 2001-08-23 | 2003-02-27 | Blanchard Richard A. | Trench DMOS transistor with embedded trench schottky rectifier |
| US20050146309A1 (en) * | 2004-01-06 | 2005-07-07 | Visteon Global Technologies, Inc. | Alternator rectifier |
| US20050199918A1 (en) | 2004-03-15 | 2005-09-15 | Daniel Calafut | Optimized trench power MOSFET with integrated schottky diode |
| DE19549202B4 (en) | 1995-12-30 | 2006-05-04 | Robert Bosch Gmbh | Rectifier diode |
| DE102004053761A1 (en) | 2004-11-08 | 2006-05-18 | Robert Bosch Gmbh | Semiconductor device and method for its production |
| US7626231B1 (en) * | 2008-06-23 | 2009-12-01 | Force Mos Technology Co., Ltd. | Integrated trench MOSFET and junction barrier schottky rectifier with trench contact structures |
| US20090315106A1 (en) * | 2008-06-23 | 2009-12-24 | Force Mos Technology Co. Ltd. | Integrated trench Mosfet and Schottky Rectifier with trench contact structure |
| US20100237414A1 (en) * | 2009-03-18 | 2010-09-23 | Force Mos Technology Co., Ltd. | MSD integrated circuits with shallow trench |
| US20100301791A1 (en) * | 2009-06-02 | 2010-12-02 | Mitsubishi Electric Corporation | Bridge rectifier circuit |
-
2010
- 2010-12-14 DE DE102010063041A patent/DE102010063041A1/en not_active Withdrawn
-
2011
- 2011-10-25 WO PCT/EP2011/068648 patent/WO2012079816A1/en not_active Ceased
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| DE19549202B4 (en) | 1995-12-30 | 2006-05-04 | Robert Bosch Gmbh | Rectifier diode |
| DE19600074A1 (en) * | 1996-01-03 | 1997-07-17 | Daimler Benz Ag | Vehicle electrical system |
| US6239515B1 (en) * | 1997-05-13 | 2001-05-29 | Daimlerchrysler Ag | Circuit for the protection of electrical devices |
| US20030040144A1 (en) * | 2001-08-23 | 2003-02-27 | Blanchard Richard A. | Trench DMOS transistor with embedded trench schottky rectifier |
| US20050146309A1 (en) * | 2004-01-06 | 2005-07-07 | Visteon Global Technologies, Inc. | Alternator rectifier |
| US20050199918A1 (en) | 2004-03-15 | 2005-09-15 | Daniel Calafut | Optimized trench power MOSFET with integrated schottky diode |
| DE102004053761A1 (en) | 2004-11-08 | 2006-05-18 | Robert Bosch Gmbh | Semiconductor device and method for its production |
| US7626231B1 (en) * | 2008-06-23 | 2009-12-01 | Force Mos Technology Co., Ltd. | Integrated trench MOSFET and junction barrier schottky rectifier with trench contact structures |
| US20090315106A1 (en) * | 2008-06-23 | 2009-12-24 | Force Mos Technology Co. Ltd. | Integrated trench Mosfet and Schottky Rectifier with trench contact structure |
| US20100237414A1 (en) * | 2009-03-18 | 2010-09-23 | Force Mos Technology Co., Ltd. | MSD integrated circuits with shallow trench |
| US20100301791A1 (en) * | 2009-06-02 | 2010-12-02 | Mitsubishi Electric Corporation | Bridge rectifier circuit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114824301A (en) * | 2022-04-26 | 2022-07-29 | 国家电投集团氢能科技发展有限公司 | Anti-antipole nitrogen-carbon carrier catalyst for proton exchange membrane fuel cell and preparation method thereof |
| CN115050976A (en) * | 2022-06-09 | 2022-09-13 | 一汽解放汽车有限公司 | Anti-reversal electrode material, anti-reversal electrode slurry, preparation method and application thereof |
| CN115050976B (en) * | 2022-06-09 | 2024-05-14 | 一汽解放汽车有限公司 | Anti-counter electrode material, anti-counter electrode slurry, and preparation methods and applications thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102010063041A1 (en) | 2012-06-14 |
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