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WO2012078530A9 - System for wafer-level phosphor deposition - Google Patents

System for wafer-level phosphor deposition Download PDF

Info

Publication number
WO2012078530A9
WO2012078530A9 PCT/US2011/063345 US2011063345W WO2012078530A9 WO 2012078530 A9 WO2012078530 A9 WO 2012078530A9 US 2011063345 W US2011063345 W US 2011063345W WO 2012078530 A9 WO2012078530 A9 WO 2012078530A9
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
semiconductor wafer
phosphor deposition
level phosphor
resist material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2011/063345
Other languages
French (fr)
Other versions
WO2012078530A1 (en
Inventor
Tao Xu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bridgelux Inc
Original Assignee
Bridgelux Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/963,011 external-priority patent/US8841145B2/en
Priority claimed from US12/963,057 external-priority patent/US8482020B2/en
Application filed by Bridgelux Inc filed Critical Bridgelux Inc
Priority to JP2013543241A priority Critical patent/JP6166659B2/en
Priority to CN2011800658345A priority patent/CN103339720A/en
Publication of WO2012078530A1 publication Critical patent/WO2012078530A1/en
Publication of WO2012078530A9 publication Critical patent/WO2012078530A9/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means

Landscapes

  • Led Device Packages (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

System for wafer-level phosphor deposition. A method for phosphor deposition on a semiconductor wafer that has a plurality of LED dies includes the operations of covering the semiconductor wafer with a selected thickness of photo resist material, removing portions of the photo resist material to expose portions of the semiconductor wafer so that electrical contacts associated with the plurality of LED dies remain unexposed, and depositing phosphor on the exposed portions of the semiconductor wafer.
PCT/US2011/063345 2010-12-08 2011-12-05 System for wafer-level phosphor deposition Ceased WO2012078530A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2013543241A JP6166659B2 (en) 2010-12-08 2011-12-05 Wafer level phosphor deposition system
CN2011800658345A CN103339720A (en) 2010-12-08 2011-12-05 Systems for Wafer-Level Phosphor Deposition

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/963,011 2010-12-08
US12/963,011 US8841145B2 (en) 2010-12-08 2010-12-08 System for wafer-level phosphor deposition
US12/963,057 2010-12-08
US12/963,057 US8482020B2 (en) 2010-12-08 2010-12-08 System for wafer-level phosphor deposition

Publications (2)

Publication Number Publication Date
WO2012078530A1 WO2012078530A1 (en) 2012-06-14
WO2012078530A9 true WO2012078530A9 (en) 2012-11-22

Family

ID=46207471

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/063345 Ceased WO2012078530A1 (en) 2010-12-08 2011-12-05 System for wafer-level phosphor deposition

Country Status (4)

Country Link
JP (1) JP6166659B2 (en)
CN (1) CN103339720A (en)
TW (1) TWI608522B (en)
WO (1) WO2012078530A1 (en)

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006505118A (en) * 2002-10-30 2006-02-09 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング Method for manufacturing a light emitting diode light source with a luminescence conversion layer
CN100508221C (en) * 2002-10-30 2009-07-01 奥斯兰姆奥普托半导体有限责任公司 Method for producing light-emitting diode light source for mixed colors
JP4415572B2 (en) * 2003-06-05 2010-02-17 日亜化学工業株式会社 Semiconductor light emitting device and manufacturing method thereof
US8012774B2 (en) * 2005-01-11 2011-09-06 SemiLEDs Optoelectronics Co., Ltd. Coating process for a light-emitting diode (LED)
JP2007073733A (en) * 2005-09-07 2007-03-22 Konica Minolta Holdings Inc Light emitting diode (LED) and method for manufacturing light emitting diode
KR100658970B1 (en) * 2006-01-09 2006-12-19 주식회사 메디아나전자 Light Emitting Diodes Generate Complex Light
US8080828B2 (en) * 2006-06-09 2011-12-20 Philips Lumileds Lighting Company, Llc Low profile side emitting LED with window layer and phosphor layer
TWI396298B (en) * 2007-08-29 2013-05-11 Everlight Electronics Co Ltd Method for coating fluorescent powder on luminescent semiconductor element and application thereof
US7939350B2 (en) * 2008-01-03 2011-05-10 E. I. Du Pont De Nemours And Company Method for encapsulating a substrate and method for fabricating a light emitting diode device
US9287469B2 (en) * 2008-05-02 2016-03-15 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
US8038497B2 (en) * 2008-05-05 2011-10-18 Cree, Inc. Methods of fabricating light emitting devices by selective deposition of light conversion materials based on measured emission characteristics
US7897419B2 (en) * 2008-12-23 2011-03-01 Cree, Inc. Color correction for wafer level white LEDs
US7994531B2 (en) * 2009-04-02 2011-08-09 Visera Technologies Company Limited White-light light emitting diode chips and fabrication methods thereof

Also Published As

Publication number Publication date
WO2012078530A1 (en) 2012-06-14
TWI608522B (en) 2017-12-11
TW201250792A (en) 2012-12-16
CN103339720A (en) 2013-10-02
JP2014502056A (en) 2014-01-23
JP6166659B2 (en) 2017-07-19

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