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WO2012067204A1 - Substrat pour élément de génération de lumière, et dispositif de génération de lumière - Google Patents

Substrat pour élément de génération de lumière, et dispositif de génération de lumière Download PDF

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Publication number
WO2012067204A1
WO2012067204A1 PCT/JP2011/076578 JP2011076578W WO2012067204A1 WO 2012067204 A1 WO2012067204 A1 WO 2012067204A1 JP 2011076578 W JP2011076578 W JP 2011076578W WO 2012067204 A1 WO2012067204 A1 WO 2012067204A1
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WIPO (PCT)
Prior art keywords
conductor layer
inner conductor
emitting element
light
substrate
Prior art date
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Ceased
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PCT/JP2011/076578
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English (en)
Japanese (ja)
Inventor
篤人 ▲橋▼本
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AGC Inc
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Asahi Glass Co Ltd
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Filing date
Publication date
Application filed by Asahi Glass Co Ltd filed Critical Asahi Glass Co Ltd
Publication of WO2012067204A1 publication Critical patent/WO2012067204A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8582—Means for heat extraction or cooling characterised by their shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/858—Means for heat extraction or cooling
    • H10H20/8585—Means for heat extraction or cooling being an interconnection

Definitions

  • the present invention relates to a light emitting element substrate and a light emitting device.
  • a penetrating metal body having a thermal conductivity higher than that of an insulating base mainly constituting the light-emitting element substrate is provided through the insulating base. Then, by mounting the light emitting element on the through metal body, heat generated from the light emitting element is dissipated.
  • the penetrating metal body for example, one having Cu, Ag, Au or the like as a main component and larger than the mounting area of the light emitting element is known (for example, see Patent Document 1).
  • a substrate for a light-emitting element with higher heat dissipation is demanded from the viewpoint of ensuring the lifetime.
  • the light-emitting element is likely to become high temperature, so that characteristic deterioration such as a decrease in luminance is likely to occur, and the mold resin that covers the light-emitting element and the phosphor contained therein are deteriorated. Is likely to occur.
  • the distance between the pair of external electrode terminals may be a problem on the back side opposite to the main surface on which the light emitting element is mounted.
  • the electrical distance such as the distance between the electrodes of the pair of external electrode terminals on the back side Electrical insulation is likely to be a problem.
  • the input power is large, such as a high-power type light-emitting device, or when the cross-sectional area of the through metal body is increased to ensure heat dissipation, electrical insulation such as the distance between electrodes becomes a problem. Cheap.
  • the present invention has been made to solve the above-described problem, and in a light emitting element substrate having a metal body on which a light emitting element is suitably mounted, while suppressing a decrease in heat dissipation, the back side electric
  • the purpose is to provide a material that can secure a good insulating property.
  • Another object of the present invention is to provide a light emitting device using such a light emitting element substrate.
  • the light-emitting element substrate of the present invention has a substrate body, a first internal conductor layer, and a second internal conductor layer having the following configurations.
  • the substrate body has a first main surface on which the light emitting element is mounted and a second main surface opposite to the first main surface, and is made of an inorganic insulating material.
  • the first inner conductor layer is disposed inside the substrate body, and extends in a column shape from the first main surface in the thickness direction so as not to reach the second main surface.
  • the second inner conductor layer is disposed inside the substrate body, extends in the horizontal direction, and is connected to the first inner conductor layer.
  • the first inner conductor layer is formed in a mounting region where the light emitting element of the first main surface is mounted.
  • the second inner conductor layer is formed at a position where the distance from the second main surface is 5 to 60% of the distance between the first main surface and the second main surface, and
  • the horizontal area is 200% or more of the horizontal area of the first inner conductor layer.
  • the light-emitting device of the present invention has the above-described light-emitting element substrate and a light-emitting element mounted in the mounting region of the light-emitting element substrate.
  • the first inner conductor layer formed in a predetermined position and size so as not to reach the second main surface, and connected to the first inner conductor layer. And having a second inner conductor layer that is formed in a predetermined position and spreads in the horizontal direction so as to have a predetermined size, while suppressing a decrease in heat dissipation and also providing electrical insulation on the back side. It can be secured. Further, according to the light emitting device of the present invention, by having the light emitting element substrate, it is possible to secure the electrical insulation on the back side while suppressing the decrease in heat dissipation, and as a result, ensure the life and reliability. it can.
  • Sectional drawing which shows an example of the board
  • substrate for light emitting elements shown in FIG. Sectional drawing which shows an example of the board
  • substrate for light emitting elements shown in FIG. Sectional drawing which shows an example of the light-emitting device of embodiment.
  • the top view of the light-emitting device shown in FIG. Sectional drawing which shows the light-emitting device of Example 2.
  • Sectional drawing which shows the light-emitting device of Example 3.
  • FIG. 1 is a cross-sectional view illustrating a light emitting device substrate according to an embodiment.
  • the light emitting element substrate 1 includes a substrate body 11, a first inner conductor layer 12, and a second inner conductor layer 13.
  • the substrate body 11 has a first main surface 11a on which a light-emitting element such as an LED element (not shown) is mounted, and a second main surface 11b facing the first main surface 11a, and is made of an inorganic insulating material.
  • the first inner conductor layer 12 is disposed inside the substrate body 11 and extends from the first main surface 11a in a columnar shape in the thickness direction so as not to reach the second main surface 11b.
  • the second inner conductor layer 13 is disposed inside the substrate main body 11 and extends in the horizontal direction (that is, the direction parallel to the first main surface 11a and the second main surface 11b of the substrate main body) and the first inner conductor layer 13.
  • the conductor layer 12 is connected.
  • the first inner conductor layer 12 is larger than the area of the mounting region 14 on which the light emitting element of the first main surface 11 a of the substrate body 11 is mounted, and includes the mounting region 14. Is formed.
  • the second inner conductor layer 13 has a distance L1 from the second main surface 11b such that the inter-surface distance L2 between the first main surface 11a and the second main surface 11b. Is formed at a position where 5 to 60% (5 ⁇ L1 / L2 ⁇ 100 ⁇ 60).
  • the second inner conductor layer 13 has a horizontal area of 200% or more of the horizontal area of the first inner conductor layer 12.
  • the horizontal area of the first inner conductor layer 12 and the second inner conductor layer 13 is an area in a plan view as shown in FIG.
  • the mounting area 14 is a central portion of the first main surface 11a.
  • a first wiring conductor layer 15 and a second wiring conductor layer 16 to which a pair of element electrodes of a light emitting element are electrically connected are provided on the first main surface 11a.
  • the first wiring conductor layer 15 is provided at a predetermined interval from the mounting region 14.
  • the second wiring conductor layer 16 covers the mounting area 14 and is continuously formed outward from the mounting area 14.
  • a frame body 23 is provided on the first main surface 11 a so as to surround the mounting region 14, the first wiring conductor layer 15, and the second wiring conductor layer 16, for example.
  • the “mounting area” is the same size as the mounting surface of a light emitting element such as an LED element. That is, when a plurality of light emitting elements such as LED elements are used, a plurality of mounting areas are formed. In this case, the size of the mounting area is the sum of all mounting areas.
  • a first external electrode terminal 17 and a second external electrode terminal 18 are provided on the second main surface 11b.
  • the first external electrode terminal 17 is electrically connected to the first wiring conductor layer 15 via a columnar first connection via 21 provided in the thickness direction inside the substrate body 11.
  • the second external electrode terminal 18 is also electrically connected to the second wiring conductor layer 16 via a columnar second connection via 22 provided in the thickness direction inside the substrate body 11. Yes.
  • the light-emitting element substrate 1 is suitably used for mounting a light-emitting element having a one-wire type, that is, an element electrode on each of an upper surface and a lower surface. That is, the element electrode on the upper surface of the light emitting element is electrically connected to the first wiring conductor layer 15 by the bonding wire, and the element electrode on the lower surface is electrically connected to the mounting region 14 of the second wiring conductor layer 16. .
  • the first inner conductor layer 12 provided in the thickness direction inside the substrate body 11 is provided so as not to reach the second main surface 11b.
  • the electrical insulation on the main surface 11b side can be effectively ensured.
  • the second inner conductor layer 13 is connected to the first inner conductor layer 12 and spreads in the horizontal direction. For this reason, it is possible to ensure a heat dissipation property close to the case where the first inner conductor layer 12 reaches the second main surface 11b.
  • the distance L1 from the second main surface 11b to the second inner conductor layer 13 is set to 5 to 60% of the inter-surface distance L2 between the first main surface 11a and the second main surface 11b.
  • the position of the second inner conductor layer 13 is formed in the middle of the first inner conductor layer, for example, as shown in FIG. 3, from the mounting region of the first inner conductor layer 12 to the second inner conductor layer 13.
  • the length of the first inner conductor layer 12 becomes shorter, there is a possibility that the heat radiation effect to the second main surface 11b side of the first inner conductor layer 12 cannot be sufficiently obtained.
  • the second inner conductor layer 13 is disposed at a position close to the light emitting element, that is, at a high temperature, it is difficult to obtain a sufficient heat dissipation effect.
  • the position of the second inner conductor layer 13 (L1 / L2 ⁇ 100 [%]) is preferably 5 to 60%, more preferably 5 to 40%, more preferably 10 to 30% is more preferable.
  • the area of the second inner conductor layer 13 in the horizontal direction is less than 200% of the area of the first inner insulating layer 12, even if the second inner conductor layer 13 is formed at the above position, sufficient heat dissipation is achieved. The effect cannot be obtained.
  • the area of the second inner conductor layer 13 is preferably 400% or more of the area of the first inner insulating layer 12, and more preferably 600% or more. Further, for the substrate body 11, from the viewpoint of ensuring the reliability of the substrate body 11 as will be described later, 95% or less of the horizontal area of the substrate body 11 is preferable, and 90% or less is more preferable.
  • the substrate body 11 and the frame body 23 are not necessarily limited as long as they are made of an inorganic insulating material.
  • an aluminum oxide sintered body alumina ceramic
  • an aluminum nitride sintered body a nitride sintered body
  • a mullite sintered body a sintered body of a glass ceramic composition including glass powder and ceramic powder (LTCC: Low Temperature Co-fired Ceramics) and the like.
  • LTCC Low Temperature Co-fired Ceramics
  • LTCC Low Temperature Co-fired Ceramics
  • the first inner conductor layer 12 and the second inner conductor layer 13 are not necessarily limited as long as they are made of a metal material, but it is preferable that at least one of Cu, Ag, and Au is a main component.
  • at least one of Cu, Ag, and Au is a main component.
  • the main component means the component having the largest mass among the constituent components.
  • the area of the first inner conductor layer 12 is preferably 0.2 to 4 times the area of the mounting region 14.
  • the area of the first inner conductor layer 12 is an area in a plan view as shown in FIG. 2, and the area of the mounting region 14 is an area in a plan view as shown in FIG.
  • the area of the first internal conductor layer 12 is:
  • the area of the second main surface of the substrate body 11 is preferably 5 to 30%.
  • the area of the substrate body 11 also means the area in plan view as shown in FIG.
  • the first inner conductor layer is formed in the mounting region, but may be one or plural.
  • the cross-sectional shape of the first inner conductor layer 12 is not necessarily limited, but from the viewpoint of ensuring the function as a heat transfer path and improving the productivity, it is a circular shape, an elliptical shape, or a square shape. A shape or a rectangular shape is preferable.
  • the end portion of the second inner conductor layer 13 is provided so as not to reach the side surface portion of the substrate body 11.
  • the substrate body 11 is completely divided vertically by the second inner conductor layer 13.
  • the peeling at the position of the inner conductor layer 13 is likely to occur.
  • the conductor layer reaches the outside, there is a concern that the reliability may be deteriorated such that the sulfide gas is likely to be discolored and migration is likely to occur.
  • the area of the second inner conductor layer 13 (that is, the area in the horizontal direction) is preferably 95% or less, and 90% or less of the area of the substrate body 11 (that is, the area in the horizontal direction) as described above. More preferred.
  • the thickness of the second inner conductor layer 13 is preferably 5 to 50 ⁇ m. By setting the thickness of the second inner conductor layer 13 to 5 ⁇ m or more, the quality of each part of the second inner conductor layer 13 as a homogeneous film can be easily made constant, and the cross-sectional area when transferring heat in the lateral direction can be easily obtained. By increasing the heat transfer, it is possible to increase heat transfer and secure sufficient heat dissipation. In addition, by setting the thickness of the second inner conductor layer 13 to 50 ⁇ m or less, it is easy to suppress deterioration in characteristics of the substrate body 11 due to a difference in thermal expansion coefficient. The thickness of the second inner conductor layer 13 is preferably 10 to 40 ⁇ m, more preferably 10 to 30 ⁇ m, from the viewpoint of heat transfer and ease of formation. The second inner conductor layer 13 preferably has a uniform thickness.
  • the shape of the second inner conductor layer 13 is not necessarily limited, but a circular shape, an elliptical shape, a square shape, or a rectangular shape is preferable from the viewpoint of securing a heat radiation area.
  • the second inner conductor layer 13 may be partially formed with a hole from the viewpoint of ensuring electrical insulation with the first connection via 21 and the like.
  • the shape of the second inner conductor layer 13 needs to be continuous from the viewpoint of heat transfer, but the shape is not limited as long as the whole is continuous.
  • the first wiring conductor layer 15, the second wiring conductor layer 16, the first external electrode terminal 17, the second external electrode terminal 18, the first connection via 21, and the second connection via 22 are made of a metal material.
  • at least one of Cu, Ag, and Au is a main component.
  • Cu, Ag, and Au is a main component.
  • these shapes and the like are not particularly limited, and are particularly limited as long as the electrical insulation on the second main surface 11b side can be effectively secured and the heat dissipation property is not excessively lowered.
  • the shape can be basically the same as that of a known light-emitting element substrate.
  • 3 and 4 are a cross-sectional view and a plan view showing a light-emitting element substrate 1 according to a modification of the present invention.
  • the light emitting element substrate 1 is not necessarily separated from the first internal conductor layer 12 and the second internal conductor layer 13, and is separated from the second wiring conductor layer 16 and the second connection via.
  • the second wiring conductor layer 16 and the second connection via 22 may have the functions of the first inner conductor layer 12 and the second inner conductor layer 13.
  • the second connection via 22 may be formed to extend from the second internal conductor layer 13 to the second external electrode terminal 18.
  • the end portion 12 b on the second main surface 11 b side of the first inner conductor layer 12 does not necessarily have to be at the same position as the second inner conductor layer 13, and is second than the second inner conductor layer 13. It may protrude to the main surface 11b side.
  • the end 12b has a distance L3 from the second main surface 11b to the end 12b of 5 to 60% of the inter-surface distance L2 between the first main surface 11a and the second main surface 11b ( A position satisfying 5 ⁇ L3 / L2 ⁇ 100 ⁇ 60) is preferable.
  • the second inner conductor layer 13 has a circular shape and is slightly smaller than the frame body 23.
  • the light emitting device 31 includes the light emitting element substrate 1, and a light emitting element 32 such as an LED element is fixed to the mounting region 14 of the second wiring conductor layer 16 by a bonding portion 33 made of a die bond material.
  • the light emitting element 32 has electrodes 32a and 32b on the upper surface and the lower surface, for example.
  • the upper surface electrode 32 a is electrically connected to the first wiring conductor layer 15 by a bonding wire 34.
  • the lower surface electrode 32 b is electrically connected to the second wiring conductor layer 16 by the joint portion 33.
  • a sealing layer 35 made of mold resin is provided so as to cover these light emitting elements 32 and bonding wires 34.
  • the light emitting element substrate 1 in which the thermal diffusibility and the electrical insulation on the second main surface 11 b side are ensured since the light emitting element substrate 1 in which the thermal diffusibility and the electrical insulation on the second main surface 11 b side are ensured, the light emitting element having an input power of 0.1 W to 5 W is provided.
  • the light emitting element substrate 1 in which the thermal diffusibility and the electrical insulation on the second main surface 11 b side are ensured the light emitting element having an input power of 0.1 W to 5 W is provided.
  • 32 is mounted, it is possible to suppress deterioration of its characteristics and obtain good reliability.
  • a plurality of light emitting elements 32 such as 0.1 W to 5 W LED elements may be mounted on the first main surface 11a so that a plurality of mounting regions 14 are formed, so that a high output light emitting device 31 may be formed. .
  • Such a light emitting device 31 can be suitably used as, for example, a backlight of a mobile phone or a liquid crystal display, an illumination for automobiles or decoration, and other light sources, and can be suitably used for a light source that particularly requires high power.
  • the light emitting element substrate 1 can be manufactured by a manufacturing method including the following steps (A) to (D). More specifically, the light emitting element substrate according to the present invention is preferably manufactured according to the following steps (A) to (D) in this order.
  • the light emitting element substrate 1 shown in FIG. 1 will be described as an example.
  • members used for manufacturing the light emitting element substrate 1 will be described with the same reference numerals as those of the finished product.
  • the base body and the green sheet for the main body are represented by the same 11 symbol
  • the first inner conductor layer and the first unfired inner conductor layer are represented by the same 12 symbol
  • Others are the same.
  • (A) Green sheet production process for main body Using a glass ceramic composition containing glass powder and ceramic powder, a green sheet (green sheet for main body) or the like for forming the substrate main body 11 is produced.
  • the main body green sheet 11 can be divided in the thickness direction according to the internal structure of the substrate main body 11 and the like.
  • a green sheet for a frame is also produced in order to form a frame.
  • (B) Conductive paste layer forming step By forming a conductive paste layer at a predetermined position on each main body green sheet 11, the first and second unfired internal conductor layers 12, 13, the first and second uncoated layers are formed. The fired wiring conductor layers 15 and 16, the first and second unfired external electrode terminals 17 and 18, and the first and second unfired connection vias 21 and 22 are formed, respectively.
  • (C) Laminating Step A plurality of unfired main body members 11 (hereinafter also referred to as green sheets with a conductor paste layer) on which a conductor paste layer is formed are stacked on the main body green sheet 11 and integrated by thermocompression bonding. An unfired substrate 1 is obtained.
  • Green sheet production process for main body Green sheet 11 for main body is made of glass ceramic composition (for example, LTCC composition) containing glass powder and ceramic powder, binder, plasticizer, dispersant, solvent as necessary. Etc. are added to prepare a slurry, which is then formed into a sheet by a doctor blade method or the like and dried. Moreover, the green sheet for frames is obtained by processing this green sheet into a predetermined shape.
  • glass ceramic composition for example, LTCC composition
  • the glass powder for main body for producing the green sheet for main body preferably has a glass transition point (Tg) of 550 to 700 ° C.
  • Tg glass transition point
  • degreasing may be difficult, and when it exceeds 700 ° C., the shrinkage start temperature becomes high and the dimensional accuracy may be lowered.
  • the glass powder is such that crystals are precipitated when fired at 800 to 930 ° C. In the case where crystals do not precipitate, there is a possibility that sufficient mechanical strength cannot be obtained. Furthermore, the thing whose crystallization peak temperature (Tc) measured by DTA (differential thermal analysis) is 880 degrees C or less is preferable. When Tc exceeds 880 ° C., the dimensional accuracy may be reduced.
  • SiO 2 is 57 to 65%
  • B 2 O 3 is 13 to 18%
  • CaO is 9 to 23%
  • Al 2 O 3 is 3% in terms of mol% based on oxide.
  • Those containing at least one selected from K 2 O and Na 2 O in a total of 0.5 to 6% are preferable. By using such a thing, it becomes easy to improve the surface flatness of the substrate body 2.
  • SiO 2 serves as a glass network former.
  • the content of SiO 2 is preferably 58% or more, more preferably 59% or more, and particularly preferably 60% or more. Further, the content of SiO 2 is preferably 64% or less, more preferably 63% or less.
  • B 2 O 3 is a glass network former. If the content of B 2 O 3 is less than 13%, there is a possibility that the glass melting temperature or Tg may be too high. On the other hand, when the content of B 2 O 3 exceeds 18%, it is difficult to obtain a stable glass, and the chemical durability may be lowered.
  • the content of B 2 O 3 is preferably 14% or more, more preferably 15% or more. Further, the content of B 2 O 3 is preferably 17% or less, more preferably 16% or less.
  • Al 2 O 3 is added to increase the stability, chemical durability, and strength of the glass. If the content of Al 2 O 3 is less than 3%, the glass may become unstable. On the other hand, when the content of Al 2 O 3 exceeds 8%, the glass melting temperature and Tg may be excessively high.
  • the content of Al 2 O 3 is preferably 4% or more, more preferably 5% or more. Further, the content of Al 2 O 3 is preferably 7% or less, more preferably 6% or less.
  • CaO is added to increase glass stability and crystal precipitation, and to lower the glass melting temperature and Tg.
  • the content of CaO is less than 9%, the glass melting temperature may be excessively high.
  • the content of CaO exceeds 23%, the glass may become unstable.
  • the content of CaO is preferably 12% or more, more preferably 13% or more, and particularly preferably 14% or more. Further, the content of CaO is preferably 22% or less, more preferably 21% or less, and particularly preferably 20% or less.
  • K 2 O and Na 2 O are added to lower Tg.
  • the glass melting temperature and Tg may be excessively high.
  • the total content of K 2 O and Na 2 O exceeds 6%, chemical durability, particularly acid resistance may be lowered, and electrical insulation may be lowered.
  • the total content of K 2 O and Na 2 O is preferably 0.8% or more and 5% or less.
  • the glass powder for main bodies is not necessarily limited to what consists only of the said component, Other components can be contained in the range with which various characteristics, such as Tg, are satisfy
  • the glass powder for main body is obtained by blending and mixing each glass raw material so as to become a glass having the above composition, producing glass by a melting method, and pulverizing by a dry pulverization method or a wet pulverization method.
  • a dry pulverization method it is preferable to use water or ethyl alcohol as a solvent.
  • the pulverizer include a roll mill, a ball mill, and a jet mill.
  • the 50% particle size (D50) of the glass powder for main body is preferably 0.5 to 2 ⁇ m.
  • D50 of the glass powder is less than 0.5 ⁇ m, the glass powder tends to aggregate and difficult to handle, and uniform dispersion becomes difficult.
  • the D50 of the glass powder exceeds 2 ⁇ m, there is a possibility that the glass softening temperature rises or the sintering is insufficient.
  • the particle diameter may be adjusted by classification as necessary after pulverization, for example.
  • the ceramic powder those conventionally used for the production of LTCC substrates can be used.
  • alumina powder, zirconia powder, or a mixture of alumina powder and zirconia powder can be suitably used.
  • a ceramic powder hereinafter referred to as a high refractive index ceramic powder
  • a high refractive index ceramic powder having a higher refractive index than alumina together with the alumina powder.
  • the high refractive index ceramic powder is a component for improving the reflectance of the sintered body (sintered substrate), and examples thereof include titania powder, zirconia powder, and stabilized zirconia powder. While the refractive index of alumina is about 1.8, the refractive index of titania is about 2.7 and the refractive index of zirconia is about 2.2, which is higher than that of alumina. .
  • the D50 of these ceramic powders is preferably 0.5 to 4 ⁇ m.
  • a glass ceramic composition is obtained by blending and mixing such glass powder and ceramic powder such that the glass powder is 30 to 50 mass% and the ceramic powder is 50 to 70 mass%, for example.
  • a slurry can be obtained by adding a binder and, if necessary, a plasticizer, a dispersant, a solvent, and the like to the glass ceramic composition.
  • binder for example, polyvinyl butyral, acrylic resin or the like can be suitably used.
  • plasticizer for example, dibutyl phthalate, dioctyl phthalate, butyl benzyl phthalate and the like can be used.
  • solvent organic solvents such as toluene, xylene, 2-propanol and 2-butanol can be preferably used.
  • the slurry thus obtained is formed into a sheet by a doctor blade method or the like and dried to produce two green sheets 11 for the main body (green sheet for upper layer, green sheet for lower layer).
  • the length of the first inner conductor layer 12 in the thickness direction of the substrate body 11 and the position of the second inner conductor layer 13 are adjusted by adjusting the thickness and ratio of the upper layer green sheet and the lower layer green sheet. Can be adjusted.
  • the green sheet 23 for frames is produced by processing the green sheet manufactured similarly to a predetermined shape.
  • (B) Conductive paste layer forming step The first and second unfired internal conductor layers 12 and 13, the first and second unfired wiring conductors are formed on the surface and inside of the green sheet 11 for the main body produced in the above step. Conductive paste layers to be the layers 15, 16, the first and second unfired external electrode terminals 17, 18, the first and second unfired connection vias 21, 22 are formed. With respect to the upper layer green sheet 11, a hole portion is formed by punching a region to be the first unfired conductor layer 12, the first unfired connection via 21, and the second unfired connection via 22. Fill with conductor paste. In addition, a conductor paste is applied to the regions to be the first unfired wiring layer 15 and the second unfired wiring layer 16. The application and filling of the conductor paste can be suitably performed by screen printing of the conductor paste and metal mask printing.
  • a region to be the first unfired connection via 21 and the second unfired connection via 22 is punched to form a hole, and the hole is filled with a conductive paste.
  • a conductor paste is applied to a surface region that becomes the second unfired inner conductor layer 13.
  • the horizontal size of the second inner conductor layer 13 can be adjusted by adjusting the application range of the conductor paste.
  • a conductor paste is applied to the region of the other surface that becomes the first unfired external electrode terminal 17 and the second unfired external electrode terminal 18.
  • a paste obtained by adding a vehicle such as ethyl cellulose to a metal material mainly composed of Cu, Ag, Au, or the like, and a solvent as required may be used.
  • a metal material Ag powder, metal powder composed of Ag and Pt, or metal powder composed of Ag and Pd are preferably used.
  • Step (C) Laminating Step Green Sheet 11 with Conductive Paste Layer (Unfired Main Body Member 11) Obtained in Step (B) is Overlaid in Predetermined Order, and Frame Green Sheet 23 on Upper Layer Green Sheet 11 After being stacked, they are integrated by thermocompression bonding. In this way, the unfired substrate 1 is obtained.
  • Degreasing is performed, for example, under conditions of holding at 500 to 600 ° C. for 1 to 10 hours.
  • the degreasing temperature is less than 500 ° C. or the degreasing time is less than 1 hour, the binder or the like may not be sufficiently removed.
  • the degreasing temperature is about 600 ° C. and the degreasing time is about 10 hours, the binder and the like can be sufficiently removed, and if it exceeds this, productivity and the like may be lowered.
  • the firing can be appropriately adjusted in the temperature range of 800 to 930 ° C. in consideration of obtaining a dense structure of the base body 11 and productivity. Specifically, it is preferably held at 850 to 900 ° C. for 20 to 60 minutes, particularly preferably 860 to 880 ° C. If the firing temperature is less than 800 ° C., the base body 11 may not be obtained as a dense structure. On the other hand, when the firing temperature exceeds 930 ° C., the productivity may be lowered due to deformation of the base body 11.
  • the conductor paste when a metal paste containing a metal powder containing Ag as a main component is used as the conductor paste, if the firing temperature exceeds 880 ° C., the conductor paste is excessively softened, so that the predetermined shape may not be maintained. .
  • the light-emitting element substrate 1 is obtained.
  • the first wiring conductor layer 15 and the second wiring conductor layer 16 exposed on the mounting surface are covered with Ni so as to cover the surface as necessary.
  • a conductive protective film used for conductor protection in a normal light emitting element substrate such as / Au plating (plating of two layers of Ni plating and Au plating) can also be provided.
  • the frame green sheet 23 does not have to be a single green sheet, and may be a laminate of a plurality of green sheets as required. Good. Further, the number of the main body green sheets 11 excluding the frame green sheet 23 is not necessarily two, and can be appropriately changed as necessary. Furthermore, the order of forming each part can be changed as appropriate as long as the light emitting element substrate 1 can be manufactured.
  • the light emitting element 32 is mounted on the light emitting element substrate 1 thus obtained, and the electrode 32 a on the upper surface thereof is electrically connected to the first wiring conductor layer 15 by the bonding wire 34. By connecting to, the light emitting device 31 can be obtained.
  • Example 1 As shown below, the thermal resistance value of the light emitting devices 31 of Examples 1 to 4 was obtained by numerical analysis, and the thermal resistance increase rate was obtained.
  • Example 1 is an example of the present invention, and Examples 2 to 4 are comparative examples of the present invention.
  • Example 1 A light emitting device 31 as shown in FIG. 5, that is, a 1-wire type LED element (size 0.6 mm in length, 0.6 mm in width, 0.1 mm in thickness) in the mounting region 14 of the light emitting element substrate 1 shown in FIG. was assumed, and the first wiring conductor layer 15 was fixed by a die-bonding material containing Ag, and the thermal resistance of this evaluation model was obtained by numerical analysis.
  • ANSYS ICEPAK Version 12.1.6 was used, and the input power was 1.0 W. The results are shown in Table 1.
  • the constituent material of the substrate body 11 is LTCC, the size is 5 mm ⁇ 5 mm, and the thickness (that is, the inter-surface distance L2 between the first main surface 11a and the second main surface 11b of the substrate body 11).
  • the thickness that is, the inter-surface distance L2 between the first main surface 11a and the second main surface 11b of the substrate body 11.
  • Each conductor that is, the first internal conductor layer 12, the second internal conductor layer 13, the first wiring conductor layer 15, the second wiring conductor layer 16, the first external electrode terminal 17, and the second external electrode terminal 18, the 1st connection via 21 and the 2nd connection via 22 were made into the metal material which has Ag as a main component.
  • the first inner conductor layer 12 was 1.3 mm ⁇ 1.3 mm in size.
  • Table 2 shows the physical property values (thermal conductivity) of each component of the evaluation model used for the analysis.
  • the thermal conductivity of the substrate body formed by LTCC shown in Table 2 is a value measured for a substrate manufactured by the following method. That is, as represented by mol% based on oxides, glass composition, SiO 2 is 60.4%, B 2 O 3 is 15.6%, Al 2 O 3 is 6%, CaO is 15%, K 2 O is The raw materials are blended and mixed so that 1% and Na 2 O become 2%. The raw material mixture is put in a platinum crucible and melted at 1600 ° C. for 60 minutes, and then the molten glass is poured out and cooled. This glass is pulverized by an alumina ball mill for 40 hours to produce glass powder for a main body. In addition, ethyl alcohol is used as a solvent for pulverization.
  • the glass powder was 38% by mass
  • the alumina filler manufactured by Showa Denko KK, trade name: AL-45H
  • the zirconia filler manufactured by Daiichi Rare Element Chemical Co., Ltd., trade name: HSY-3F-J.
  • this glass ceramic composition 15 g of an organic solvent (mixed with toluene, xylene, 2-propanol, 2-butanol in a mass ratio of 4: 2: 2: 1), a plasticizer (di-2-ethylhexyl phthalate) 2.5 g, 5 g of polyvinyl butyral (made by Denka, trade name: PVK # 3000K) as a binder, and 0.5 g of a dispersant (trade name: BYK180, made by Big Chemie) are mixed and mixed to prepare a slurry. .
  • an organic solvent mixed with toluene, xylene, 2-propanol, 2-butanol in a mass ratio of 4: 2: 2: 1
  • a plasticizer di-2-ethylhexyl phthalate
  • polyvinyl butyral made by Denka, trade name: PVK # 3000K
  • a dispersant trade name: BYK180, made by Big Che
  • the slurry is applied onto a PET film by a doctor blade method, and the dried green sheets are laminated so that the thickness after firing becomes 0.5 mm, thereby producing a green sheet for a main body.
  • This green sheet is degreased by holding at 550 ° C. for 5 hours, and further, kept at 870 ° C. for 30 minutes and fired, and then the thermal conductivity of the sintered body (substrate body) is measured.
  • the thermal resistance increase rate (%) in Table 1 is a relative evaluation of the difference between the thermal resistance values of Examples 2 to 4 and Example 1 with the thermal resistance value of Example 1 as a reference.
  • Examples 5 to 12 The area of the first inner conductor layer 12 is constant at 1.2 mm ⁇ 1.2 mm, and the ratio [%] of the area of the second inner conductor layer 13 to the area of the first inner conductor layer 12 (second inner).
  • the analysis of the thermal resistance value was basically performed for the light emitting device 31 similar to Example 1 except that the area of the conductor layer 13 / the area of the first inner conductor layer 12 ⁇ 100) was changed as shown in Table 3. Then, the relative thermal resistance value was obtained. In addition, the relative thermal resistance value here was represented as 1.00 which is based on the thermal resistance value when the first inner conductor layer 12 and the second inner conductor layer 13 have the same area.
  • the analysis results are shown in Table 3 and FIG. Examples 5 and 6 are comparative examples for the present invention, and Examples 7 to 12 are examples of the present invention.
  • the effect of suppressing the thermal resistance value increases.
  • the ratio of the area of the second inner conductor layer 13 to the area of the first inner conductor layer 12 is 400% or more, a sufficient effect is obtained, and particularly when the ratio is 600% or more, a further sufficient effect is obtained. It is done.
  • the relative thermal resistance value is expressed by assuming that the area of the first inner conductor layer 12 is the same as the size of the LED element, that is, the thermal resistance value of Example 14 is 1.00 as a reference.
  • the analysis results are shown in Table 4 and FIG. Examples 13 to 19 are all examples of the present invention.
  • the area of the first inner conductor layer 12 is preferably determined in view of the balance between required heat dissipation performance and cost, and is preferably 0.2 to 16 times the area of the LED element, and 0.2 More preferably, it is ⁇ 4.0.
  • the first inner conductor layer 12 and the second inner conductor layer 13 are assumed to be square pillars having a square horizontal cross section and the same top surface and bottom surface of each inner conductor layer.
  • the “area of the inner conductor layer and the area of the second inner conductor layer” and the “area of the first inner conductor layer and the area of the LED element” are compared.
  • the first inner conductor layer or the second inner conductor layer has a shape with a different horizontal cross-sectional area (for example, a truncated cone or a truncated pyramid), it is compared with the minimum value of the horizontal cross-sectional area.
  • the present invention it is possible to provide a substrate for a light-emitting element capable of ensuring electrical insulation on the back surface side while suppressing a decrease in heat dissipation, and by providing the light-emitting element substrate, heat dissipation is achieved. Therefore, it is possible to provide a light-emitting element that can ensure electrical insulation on the back surface side while suppressing deterioration of the property, and as a result can ensure life and reliability, and is useful as a high-power type light-emitting device.
  • SYMBOLS 1 Light emitting element substrate (unfired substrate), 11 ... Substrate main body (green sheet for main body, green sheet with conductive paste layer), 11a ... First main surface, 11b ... Second main surface, 12 ... First Inner conductor layer (first unfired inner conductor layer), 13 ... second inner conductor layer (second unfired inner conductor layer), 14 ... mounting region, 31 ... light emitting device, 32 ... light emitting element, 32a ... Upper electrode, 32b ... Lower electrode

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
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  • Power Engineering (AREA)

Abstract

Le substrat pour élément de génération de lumière (1) de l'invention possède : un corps principal de substrat (11), une première couche conductrice interne (12), et une seconde couche conductrice interne (13). Ledit corps principal de substrat (11) possède : une première face principale (11a) et une seconde face principale (11b) sur lesquelles est monté un élément de génération de de lumière. La première couche conductrice interne (12) est disposée dans la partie interne du corps principal de substrat (11), et se prolonge dans la direction de l'épaisseur à partir de la première face principale (11a) de sorte à ne pas atteindre la seconde face principale (11b). La seconde couche conductrice interne (13) est disposée dans la partie interne du corps principal de substrat (11), et est connectée à la première couche conductrice interne (12) tout en s'étendant dans la direction horizontale. En outre, la seconde couche conductrice interne (13) est formée en une position distante de 5 à 60% dans la distance interfaciale entre la première face principale (11a) et la seconde face principale (11b) à partir de la seconde face principale (11b). Enfin, la seconde couche conductrice interne (13) présente une surface dans la direction horizontale qui est supérieure ou égale à 200% de la surface dans la direction horizontale de la première couche conductrice interne (12).
PCT/JP2011/076578 2010-11-19 2011-11-17 Substrat pour élément de génération de lumière, et dispositif de génération de lumière Ceased WO2012067204A1 (fr)

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CN104409614A (zh) * 2014-10-24 2015-03-11 苏州德鲁森自动化系统有限公司 一种二引脚3528led灯的焊盘
EP2919286A4 (fr) * 2012-11-06 2016-05-11 Ngk Insulators Ltd Substrat pour diodes électroluminescentes

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US20220367759A1 (en) * 2019-10-30 2022-11-17 Kyocera Corporation Light emitting element mounting package and light emitting device

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JP2004214436A (ja) * 2003-01-06 2004-07-29 Sharp Corp 半導体発光装置およびその製造方法
JP2006066519A (ja) * 2004-08-25 2006-03-09 Kyocera Corp 発光素子用配線基板ならびに発光装置
JP2006093565A (ja) * 2004-09-27 2006-04-06 Kyocera Corp 発光素子用配線基板ならびに発光装置およびその製造方法

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JP2004214436A (ja) * 2003-01-06 2004-07-29 Sharp Corp 半導体発光装置およびその製造方法
JP2006066519A (ja) * 2004-08-25 2006-03-09 Kyocera Corp 発光素子用配線基板ならびに発光装置
JP2006093565A (ja) * 2004-09-27 2006-04-06 Kyocera Corp 発光素子用配線基板ならびに発光装置およびその製造方法

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EP2919286A4 (fr) * 2012-11-06 2016-05-11 Ngk Insulators Ltd Substrat pour diodes électroluminescentes
US9402300B2 (en) 2012-11-06 2016-07-26 Ngk Insulators, Ltd. Substrate for light-emitting diode
CN104409614A (zh) * 2014-10-24 2015-03-11 苏州德鲁森自动化系统有限公司 一种二引脚3528led灯的焊盘
CN104409614B (zh) * 2014-10-24 2017-02-15 新黎明科技股份有限公司 一种二引脚3528led灯的焊盘

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