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WO2012050072A1 - Film de polyimide, son procédé de fabrication et procédé de fabrication de produit feuilleté - Google Patents

Film de polyimide, son procédé de fabrication et procédé de fabrication de produit feuilleté Download PDF

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Publication number
WO2012050072A1
WO2012050072A1 PCT/JP2011/073295 JP2011073295W WO2012050072A1 WO 2012050072 A1 WO2012050072 A1 WO 2012050072A1 JP 2011073295 W JP2011073295 W JP 2011073295W WO 2012050072 A1 WO2012050072 A1 WO 2012050072A1
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Prior art keywords
film
polyimide film
polyimide
layer
lubricant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2011/073295
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English (en)
Japanese (ja)
Inventor
奥山　哲雄
杉原　秀紀
俊之 土屋
政宏 玉田
郷司 前田
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Toyobo Co Ltd
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Toyobo Co Ltd
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Priority to JP2011548445A priority Critical patent/JP5742725B2/ja
Publication of WO2012050072A1 publication Critical patent/WO2012050072A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/0008—Electrical discharge treatment, e.g. corona, plasma treatment; wave energy or particle radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/22—Polybenzoxazoles
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C65/00—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor
    • B29C65/02—Joining or sealing of preformed parts, e.g. welding of plastics materials; Apparatus therefor by heating, with or without pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/02—Preparation of the material, in the area to be joined, prior to joining or welding
    • B29C66/026—Chemical pre-treatments
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/01—General aspects dealing with the joint area or with the area to be joined
    • B29C66/02—Preparation of the material, in the area to be joined, prior to joining or welding
    • B29C66/028—Non-mechanical surface pre-treatments, i.e. by flame treatment, electric discharge treatment, plasma treatment, wave energy or particle radiation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/71—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material characterised by the composition of the plastics material of the parts to be joined
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/74—Joining plastics material to non-plastics material
    • B29C66/742—Joining plastics material to non-plastics material to metals or their alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C66/00—General aspects of processes or apparatus for joining preformed parts
    • B29C66/70—General aspects of processes or apparatus for joining preformed parts characterised by the composition, physical properties or the structure of the material of the parts to be joined; Joining with non-plastics material
    • B29C66/74—Joining plastics material to non-plastics material
    • B29C66/746—Joining plastics material to non-plastics material to inorganic materials not provided for in groups B29C66/742 - B29C66/744
    • B29C66/7465—Glass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/02—Temperature
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
    • B32B2309/08—Dimensions, e.g. volume
    • B32B2309/10—Dimensions, e.g. volume linear, e.g. length, distance, width
    • B32B2309/105—Thickness
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2379/00—Other polymers having nitrogen, with or without oxygen or carbon only, in the main chain
    • B32B2379/08—Polyimides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/14—Semiconductor wafers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors

Definitions

  • 1st invention of this application is a polyimide film used for manufacture of the laminated body comprised from the board
  • the film is made of a thin film such as polyimide having excellent heat resistance and insulation, and a glass plate, a ceramic plate, a silicon wafer, and a metal having approximately the same linear expansion coefficient as those having a low linear expansion coefficient in a specific range.
  • Polyimide for obtaining a laminated body excellent in dimensional stability, heat resistance, and insulating properties laminated with a selected kind of inorganic substrate, and a semiconductor addition laminated body in which a semiconductor element is formed using the laminated body The present invention relates to a film and a manufacturing method thereof.
  • the present invention relates to a multilayer polyimide film that can be effectively used for copper-clad laminates, circuit boards, and the like. More specifically, a polyimide film is supported temporarily (or semipermanently if necessary) when forming a thin film such as a semiconductor element, MEMS element, or display element that requires fine processing on the polyimide film surface.
  • the second invention of the present application is a method for producing a laminate comprising a polyimide film and an inorganic substrate, and more specifically, a thin film such as a semiconductor element, a MEMS element or a display element, which requires fine processing.
  • the method relates to a lamination method for obtaining a laminate in which the polyimide film is temporarily or semi-permanently bonded to a substrate made of an inorganic material as a support.
  • the film is selected from a thin polyimide film having excellent heat resistance and insulation and a glass plate, a ceramic plate, a silicon wafer, and a metal having approximately the same linear expansion coefficient as those having a low linear expansion coefficient in a specific range.
  • the present invention relates to a laminate having excellent dimensional stability, heat resistance, and insulating properties on which a kind of inorganic substrate is laminated, and a semiconductor additional laminate having a semiconductor element formed using the laminate.
  • the polymer film is bonded to a rigid support substrate made of an inorganic material such as a metal plate, wafer, or glass substrate, and the desired infrastructure is formed and then peeled off from the support substrate. It becomes possible to obtain a functional element formed on the film by using it.
  • the surface smoothness, cleanliness, resistance to process temperature, resistance to chemicals used for microfabrication are not problematic for the formation of such functional elements. Is required.
  • the formation temperature of the functional element is high, not only the heat resistance of the polymer film but also the bonding surface of the laminate must withstand the processing temperature.
  • Si has a linear expansion coefficient of about 3 ppm / ° C.
  • ceramic has been used as a base material for electronic components such as information communication equipment (broadcast equipment, mobile radio equipment, portable communication equipment, etc.), radar, high-speed information processing equipment, and the like.
  • a base material made of ceramic has heat resistance, and can cope with a recent increase in the signal band of information communication equipment (reaching the GHz band).
  • ceramics are not flexible and cannot be thinned, so the fields that can be used are limited. For this reason, studies using polymer films made of organic materials as base materials for electronic components have been made, and polymer films made of polymers such as polyethylene naphthalate and polyethylene terephthalate, films made of polyimide, and films made of polytetrafluoroethylene have been proposed. Has been.
  • a film made of polyimide is excellent in heat resistance and has an advantage that the film can be thin because it is tough.
  • These polyimide films generally have a large coefficient of linear expansion, have a significant dimensional change due to a temperature change, and are not suitable for the production of circuits having fine wiring.
  • a film having sufficient physical properties for a substrate having heat resistance, high mechanical properties, and flexibility has not been obtained yet.
  • a polyimide film having a high tensile modulus a polyimide benzoxazole film made of polyimide having a benzoxazole ring in the main chain has been proposed (see Patent Document 1).
  • a printed wiring board using the polyimide benzoxazole film as a dielectric layer has also been proposed (see Patent Document 2 and Patent Document 3).
  • polyimide benzoxazole films made of polyimide having a benzoxazole ring in the main chain are improved in tensile strength at break and tensile elastic modulus, and have a satisfactory range of linear expansion coefficient.
  • thermoplastic resin a thermoplastic resin
  • the low tends to ruin the heat resistance of the folded polyimide film.
  • a step of forming a resin substrate on a fixed substrate through an amorphous silicon film serving as a release layer, a step of forming at least a TFT element on the resin substrate, and a laser beam on the amorphous silicon film The step of peeling the resin substrate from the fixed substrate in the amorphous silicon film by irradiating and manufacturing a flexible display device using the resin substrate is disclosed (Patent Document 4).
  • laser irradiation or etching means is used for the adhesive layer at the time of peeling, which causes a complicated process and high cost.
  • the first invention of the present application while being supported by a heat-resistant inorganic layer substrate, precise positioning can be performed at the time of circuit wiring creation and semiconductor formation, thin film formation, circuit formation, etc. can be performed in multiple layers.
  • a polyimide film that can be used for a circuit-added laminate and a semiconductor-added laminate in which a semiconductor element is formed, by which a thin film can be deposited without being peeled off even in a high-temperature process. Precise positioning during circuit wiring creation, thin film formation in multiple layers, circuit formation, etc.
  • the film changes in shape that is inferior in dimensional stability, positioning is difficult for device creation, so it is hard with excellent dimensional stability
  • a laminate having a peel strength that can be smoothly peeled off from the substrate and does not peel off after passing through the process has been demanded.
  • the conventional electronic device creation process can be used as it is, and the device creation on the film can be carried out stably and accurately.
  • it can also be used as a board
  • thin solar cells made of monocrystalline and polycrystalline Si which are becoming thinner, are thin, so they are prone to cracking, and there are problems with handling during the process and durability after completion. It can also be used as a reinforcing substrate.
  • a varnish is applied on the wafer and then peeled to form a film, the wafer has a concentric film thickness distribution and the difference in structure between the front and back of the film causes warping It is difficult to maintain proper peel strength while maintaining appropriate peel strength, and it is difficult to maintain physical properties as a film.
  • the film thickness in a narrow area such as wafer or glass is quite the same Since the circuit is high, the circuit can be pasted after the circuit is made first, or the circuit can be created after the circuit is pasted, which is suitable for circuit manufacture. Also, when creating circuit wiring, when positioning accurately, creating thin films in multiple layers, forming circuits, etc., the surface shape remains the same as a normal film, and there is no crater shape. Can be handled.
  • a planarization layer is often applied, but when a crater is provided on the opposite film surface, Crater shape is useful when applying a planarization layer as a moderate anchor. Further, when the average surface roughness Ra of the opposite film surface is small, the planarizing layer can be made thin.
  • precise positioning can be performed at the time of circuit wiring creation and semiconductor formation, thin film formation, circuit formation, etc. can be performed in multiple layers. A circuit-added laminate and a semiconductor-added laminate in which semiconductor elements are formed are provided.
  • the present inventors have found that a glass plate or ceramic having a linear expansion coefficient in a specific range having a lower level and having a linear expansion coefficient almost equal to that of a polyimide film having a higher level of heat resistance and flexibility. It is found that a laminate having excellent heat resistance and insulation laminated with a kind of inorganic layer selected from a plate, a silicon wafer, and a metal is extremely significant when used for electronic device creation, The present inventors have found a polyimide film excellent in adhesiveness that can be bonded without using an inorganic layer and an adhesive that can be used for it. That is, the first invention of the present application has the following configuration. 1.
  • the polyimide film described in 1. 3. It has 2 to 100 craters having a diameter of 10 to 500 nm per 100 ⁇ m 2 when observed by AFM method on both sides of the film.
  • Aromatic diamines are aromatic diamines containing 70 mol% or more of benzoxazole structure, and aromatic tetracarboxylic acids are aromatic tetracarboxylic acids containing 70 mol% or more of pyromellitic acid residues. ⁇ 4. The polyimide film according to any one of the above. 6). 1. Aromatic diamines are aromatic diamines containing 70 mol% or more of phenylenediamine structures, and aromatic tetracarboxylic acids are aromatic tetracarboxylic acids containing 70 mol% or more of biphenyltetracarboxylic acid structures. ⁇ 4. The polyimide film according to any one of the above. 7.
  • a lubricant having an average particle size of 0.05 to 2.5 ⁇ m in one polyimide precursor solution obtained by reaction of aromatic diamines and aromatic tetracarboxylic acids.
  • the polyimide film obtained by using the solution is plasma-treated on one side of the polyimide film so that at least a part of the lubricant near the surface is exposed to the surface, and the surface is acid-treated, thereby 1. It is obtained by dissolving and removing at least part of the lubricant particles.
  • a lubricant particles having an average particle size of 0.05 to 2.5 ⁇ m in one polyimide precursor solution obtained by reaction of aromatic diamines and aromatic tetracarboxylic acids.
  • a lubricant particles having an average particle size of 0.05 to 2.5 ⁇ m in one polyimide precursor solution obtained by reaction of aromatic diamines and aromatic tetracarboxylic acids.
  • exposing at least a part of the lubricant near the both surfaces to the surface by plasma treatment on both sides of the polyimide film obtained using the solution, and acid-treating both sides 2. It is obtained by dissolving and removing at least a part of the lubricant particles.
  • a lubricant (particles) having an average particle size of 0.03 to 2.5 ⁇ m is added to the polyimide precursor solution (a) obtained by the reaction of aromatic diamines and aromatic tetracarboxylic acids.
  • the other polyimide precursor solution (b) does not contain a lubricant (particles) having an average particle size of 0.03 to 2.5 ⁇ m, or the content thereof is 0.01% by mass or less.
  • Plasma treatment is performed on at least the surface of the a layer using polyimide films prepared by using different solutions, each of which includes a polyimide film (a layer) containing a lubricant and a polyimide layer (b layer) containing no lubricant.
  • the lubricant near the surface is exposed on the surface, and the surface is acid-treated to obtain and dissolve and remove at least a part of the lubricant particles near the film surface. 4 to do .
  • the manufacturing method of the polyimide film of description. Further, the second invention of the present application has the following configuration. 10.
  • a method for producing a laminate comprising at least a substrate made of an inorganic material and a polyimide film, comprising the following steps (1) to (4): (1) a step of plasma-treating at least one surface of a polyimide film containing an inorganic filler in the vicinity of the surface (2) a step of acid-treating at least one surface of the film, (3) A step of treating at least one side of the polyimide film and / or at least one side of the substrate made of an inorganic material with a coupling agent (4) Superimposing the polyimide film and the substrate made of the inorganic material and subjecting the substrate to a pressure heat treatment Step of joining by 9.
  • At least a part of the inorganic filler in the vicinity of the film surface is exposed to the surface by the plasma treatment.
  • the manufacturing method of the laminated body as described in any one of. 12 9. At least a part of the inorganic filler in the vicinity of the film surface is dissolved and removed by the acid treatment. Or 11.
  • the manufacturing method of the laminated body as described in any one of. 13. 9. The pressurizing and heating treatment is performed with a roll. To 12.
  • the pressure heat treatment is performed under vacuum.
  • a laminate obtained using the polyimide film is composed of a kind of inorganic layer selected from a glass plate, a ceramic plate, a silicon wafer, and a metal.
  • the opposite surface of the polyimide film (the surface not bonded to the substrate) has a Ra of 1.0 nm to 4.0 nm, or 100 ⁇ m 2 when observed by AFM.
  • the crater in the present invention has a function of promoting adhesion between the polyimide film and the substrate, and this function is presumed to be a sucker effect by the crater.
  • the laminate of the present invention when a circuit is formed on a thin film that is insulating, flexible, and heat resistant, and when an electronic device is created by mounting electronic components, the dimension is stable even if the film is thin. Accurate positioning is possible by laminating and fixing to an inorganic substrate with excellent properties.
  • Thin film formation and circuit formation can be performed in multiple layers, and it does not peel off even if heat is applied during the process. Necessary after device creation Therefore, when peeling off this inorganic substrate, it is a laminate that has a peel strength that can be smoothly peeled off between the film and the substrate and does not peel off when passing through the process. It is possible to use, especially because the device creation on the film is excellent in adhesion and smoothness due to the surface characteristics of the film. Every well can be carried out, flexible insulation, is very significant in such an electronic device fabrication forming and circuits on a thin film having both heat resistance.
  • this part of the process can be made into a roll-to-roll process and can be processed efficiently.
  • the film roll that has been subjected to the plasma treatment has a lubricant
  • the handling property as a roll is equivalent to that before the plasma treatment.
  • roll-to-roll transportability is ensured by attaching an appropriate protective film to the opposite side of the application surface before acid treatment as required, and the opposite side of application is the device Because it is a creation surface, it also has the meaning of preventing scratches on this surface.
  • the plasma treatment can be performed with a roll and then the cut sheet can be used for the acid treatment, a simple implementation is possible.
  • the laminate obtained by the second invention of the present application is composed of one surface of a substrate made of a kind of inorganic layer selected from a glass plate, a ceramic plate, a silicon wafer, and a metal, and aromatic tetracarboxylic acids and aromatic diamines.
  • One side of the polyimide film obtained by the reaction preferably having a linear expansion coefficient of 100 ° C. to 200 ° C. (both in the length direction and width direction of the film) of ⁇ 3 ppm / ° C. to +20 ppm / ° C.
  • the 180 ° peel strength between the laminate film and the inorganic layer is 0.5 N / cm or more and 3 N / cm or less, and is insulating, flexible, and heat resistant.
  • the thin film is laminated and fixed on an inorganic substrate with excellent dimensional stability.
  • This enables precise positioning, multi-layer thin film creation, circuit formation, etc., and when the inorganic substrate is peeled off as necessary after device creation, the film and substrate can be smoothly peeled off.
  • the conventional electronic device creation process can be used as it is, and device creation on the film can be carried out stably and accurately.
  • it is extremely useful for making an electronic device in which a circuit or the like is formed on a thin film having insulation, flexibility and heat resistance.
  • Example of AFM image of crater Example of AFM image of the crater section Cross section image of the straight line part
  • Example of AFM image including crater: 10 ⁇ m square Example of cross-sectional display of unevenness of polyimide film layer and crater part diameter
  • Figure showing the height of unevenness of polyimide film layer in shades of color (high white position, low black position) (2)
  • Example of cross-sectional display of unevenness of polyimide film layer in white line (3)
  • Crater diameter Cross-sectional display of the unevenness of the polyimide film layer
  • the figure showing the height of the unevenness of the polyimide film layer in shades of color (the position where white is high, the position where black is low) (2)
  • Example of cross-sectional display and straight line of layer irregularities threshold (3) ⁇ ⁇ binarized by threshold (4) filled circular ring part (5)
  • (3) inverted (6) Logical AND of 4
  • the polyimide film particularly useful in the present invention comprises a polyimide having the composition described later, and has a glass transition temperature of 250 ° C. or higher, preferably 300 ° C. or higher, more preferably 350 ° C. or higher.
  • the thickness of the polyimide film in the present invention is not particularly limited, but is preferably 1 ⁇ m to 200 ⁇ m, and more preferably 3 ⁇ m to 60 ⁇ m.
  • the thickness unevenness of these films is also preferably 20% or less.
  • the thickness is 1 ⁇ m or less, it is difficult to control the thickness, and it is difficult to peel off the inorganic layer.
  • the thickness is 200 ⁇ m or more, the film is easily bent when the film is peeled off.
  • the lubricant (particles) or inorganic filler in the present invention has a volume average particle diameter (hereinafter also referred to as average particle diameter) of 0.001 to 10 ⁇ m, preferably 0.03 to 2.5 ⁇ m, more preferably 0.05 to Particles made of 2.5 ⁇ m inorganic particles, such as metals, metal oxides, metal nitrides, metal carbonides, metal acid salts, phosphates, carbonates, talc, mica, clay, other clay minerals, etc.
  • metal oxide such as silicon oxide, calcium phosphate, calcium hydrogen phosphate, calcium dihydrogen phosphate, calcium pyrophosphate, hydroxyapatite, calcium carbonate, glass filler, phosphate, carbonate is used. be able to.
  • the volume average particle diameter of the lubricant (particles) further preferably used in the present invention is 0.05 to 1 ⁇ m, still more preferably 0.05 to 0.7 ⁇ m, particularly preferably 0.05 to 0.3 ⁇ m. .
  • the volume average particle diameter is based on a measurement value obtained by a light scattering method. If the particle size is smaller than the lower limit, the industrial production of the film becomes difficult, and if the particle size exceeds the upper limit, the surface irregularities become too large, causing practical problems.
  • the content of the lubricant added to the solution is 0.05 to 50% by mass, preferably 0.1 to 3% by mass, more preferably 0.20 to 1.0% by mass. .
  • the addition amount of the lubricant is too small, it is difficult to expect the effect of the addition of the lubricant, and it is not preferable because the slipperiness is not secured so much.
  • the amount is too large, the film production is hindered, the surface unevenness becomes too large, and even if the sliding property is ensured, the smoothness is lowered, the breaking strength of the film, the breaking elongation is lowered, and the CTE rises. It will leave the problem by inviting.
  • the polyimide film in the present invention is preferably a roll film obtained by winding in the form of a long film having a width of 300 mm or more and a length of 10 m or more at the time of production.
  • the thing of the form is more preferable.
  • the surface form of the polyimide film used is preferably such that the average surface roughness Ra of at least one surface is 100 nm or less at the time of production.
  • the protrusion height, number density, and average surface roughness Ra are based on values obtained by measurement by AFM.
  • the polyimide film of the present invention is preferably obtained by subjecting at least one surface of a polyimide film as a raw material to plasma treatment and post-acid treatment as a production method thereof. Since the surface of the polyimide film after the acid treatment is eluted by the acid, the surface of the film has 2 to 100 craters having a diameter of 10 to 500 nm per 100 ⁇ m 2 when one surface of the film is observed by the AFM method.
  • a preferred first embodiment of the first invention of the present application is a polyimide film obtained by subjecting only one surface of a polyimide film containing a lubricant to the plasma treatment and the acid treatment, and the treated surface has 2 per 100 ⁇ m 2.
  • the film has -100 craters with a diameter of 10 to 500 nm, the other surface has a Ra of 1.0 to 4.0 nm, and the processed surface has a convex portion on the surface compared to the polyimide film at the time of manufacture. Decrease.
  • a preferred second embodiment of the first invention of the present application is a polyimide film obtained by performing the plasma treatment and the acid treatment on both surfaces of a polyimide film containing a lubricant, and both surfaces of the film are observed by an AFM method. Each surface has 2 to 100 craters with a diameter of 10 to 500 nm per 100 ⁇ m 2 .
  • a preferred third embodiment of the first invention of the present application uses a multilayer polyimide film in which a lubricant-containing polyimide layer (a layer) and a polyimide layer not containing a lubricant (b layer) are laminated. At least a part of the lubricant near the surface is exposed to the surface by plasma treatment on the surface of the material-containing polyimide layer, and at least a part of the lubricant particles near the film surface is dissolved and removed by acid-treating the surface.
  • the polyimide film obtained by the above process is a smooth surface having an average surface roughness Ra of 0.2 nm to 1.0 nm on one side of the film, and 2 to 100 per 100 ⁇ m 2 when the other side is observed by the AFM method.
  • the method of multilayering (lamination) of the multilayer polyimide film is not particularly limited as long as there is no problem in adhesion between the two layers, and the multilayer polyimide film can be adhered without interposing another layer such as an adhesive layer.
  • the other polyamic acid solution is continuously applied onto the polyimide film and imidized, and one polyamic acid solution is cast to create a polyamic acid precursor film.
  • the other polyamic acid solution is continuously applied onto the polyamic acid film, followed by imidization, coextrusion, and (b) the polyamic acid solution (a) is applied onto the layer by spray coating or the like.
  • one polyamic acid solution is cast to produce a polyamic acid precursor film.
  • the polyimide film of the present invention can produce an inorganic layer and a laminate without interposing an adhesive layer. Instead of the adhesive layer, a very heat-resistant layer, that is, silane coupling is used to laminate the inorganic layer.
  • the second invention of the present application is a method for producing a laminate comprising at least a substrate made of an inorganic substance and a polyimide film, comprising the following steps (1) to (4): It is a manufacturing method. (1) A step of plasma-treating at least one surface of a polyimide film containing an inorganic filler near the surface. (2) A step of acid-treating at least one surface of the film.
  • the coupling agent is not particularly limited, but a silane coupling agent is preferable, and one having an amino group or an epoxy group is particularly preferable.
  • Specific examples of the silane coupling agent include N-2- (aminoethyl) -3-aminopropylmethyldimethoxysilane, N-2- (aminoethyl) -3-aminopropyltrimethoxysilane, N-2- (amino Ethyl) -3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, 3-aminopropyltriethoxysilane, 3-triethoxysilyl-N- (1,3-dimethylbutylidene) propylamine, 2- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, 3-glycidoxypropyltrimethoxysilane, 3-g
  • a method for treating a silane coupling agent during production of a laminate a method in which a solution of a silane coupling agent is applied to a substrate made of an inorganic material (inorganic layer), dried and heat-treated.
  • the method include drying and heat-treating the polyimide film after immersion, adding at the time of polyimide film creation, and treating the coupling agent simultaneously with film creation.
  • the pH during the treatment greatly affects the performance, and the pH may be adjusted as appropriate.
  • a substrate (inorganic layer) made of an inorganic material when the polyimide film in the present invention is bonded and laminated to an inorganic layer a glass plate, a ceramic plate, a silicon wafer, a metal plate, and the glass plate, ceramic plate,
  • silicon wafers and metal composites include those obtained by laminating them, those in which these inorganic substances are dispersed, and those containing these inorganic fibers.
  • quartz glass As a glass plate as a substrate (inorganic layer) made of an inorganic substance when the polyimide film in the present invention is bonded and laminated to an inorganic layer, quartz glass, high silicate glass (96% silica), soda lime glass, lead glass, Aluminoborosilicate glass, borosilicate glass (Pyrex (registered trademark)), borosilicate glass (non-alkali), borosilicate glass (microsheet), and aluminosilicate glass are included. Among them, those having a linear expansion coefficient of 5 ppm / ° C. or lower are desirable, and liquid crystal glass Corning 1753, Asahi Glass AN100, and the like are desirable.
  • a ceramic plate as a substrate (inorganic layer) made of an inorganic substance when the polyimide film in the present invention is bonded and laminated to an inorganic layer
  • AL 2 O 3 Mullite, AlN, SiC, Si 3 N 4 , crystallized glass, Cordierite, Spodumene, Pb-BSG + CaZrO 3 + Al 2 O 3 , Crystallized glass + Al2O3, Crystallized Ca-BSG, BSG + Quartz, BSG + Quartz, BSG + Al2O3, Pb- BSG + Al2O3, Glass-ceramic, based ceramics such as Zerodur material, TiO 2, strontium titanate, calcium titanate, magnesium titanate.
  • Capacitor materials such as alumina, MgO, steatite, BaTi4O9, BaTi03, BaTi03 + CaZrO3, BaSrCaZrTio3, Ba (TiZr) O3, PMN-PT PFN-PFW, PbNb2O6, Pb0.5Be0.5Nb2O6, Piezoelectric materials such as PbTiO3, BaTiO3, PZT, 0.855PZT-.95PT-0.5BT, 0.873PZT-0.97PT-0.3BT, PLZT are included.
  • the silicon wafer as the substrate (inorganic layer) made of an inorganic material when the polyimide film is bonded and laminated to the inorganic layer in the present invention includes all n-type or p-type doped silicon wafers and intrinsic silicon wafers. Further, a silicon wafer in which a silicon oxide layer or various thin films are deposited on the surface of the silicon wafer is also included. In addition to silicon wafers, germanium, silicon-germanium, gallium-arsenic, aluminum-gallium-indium, and nitrogen-phosphorus-arsenic-antimony are often used.
  • InP Indium Phosphate
  • InGaAs InGaAs
  • GaInNAs GaInNAs
  • LT Long Term Evolution
  • LN Long Term Evolution
  • ZnO zinc oxide
  • CdTe cadmium tellurium
  • ZnSe zinc selenide
  • general-purpose semiconductor wafers InP (Indium Phosphate), InGaAs, GaInNAs, LT, LN, ZnO (zinc oxide), CdTe (cadmium tellurium), ZnSe (zinc selenide)
  • general-purpose semiconductor wafers General-purpose semiconductor wafers.
  • the metal as the substrate (inorganic layer) made of an inorganic material when the polyimide film is bonded and laminated to the inorganic layer includes single element metals such as W, Mo, Pt, Fe, Ni, and Au, Inconel, Monel, and mnemonic. , Carbon copper, Fe—Ni-based Invar alloy, and Super Invar alloy.
  • the multilayer metal plate which added the other metal layer and the ceramic layer to said metal is also contained. In this case, if the total CTE with the additional layer is low, Cu, Al or the like is also used for the main metal layer.
  • the metal used as the additional metal layer is limited as long as it has strong adhesion to the polyimide film, no diffusion, and good chemical resistance and heat resistance. However, chromium, nickel, TiN, and Mo-containing Cu can be cited as preferable examples.
  • the plasma treatment preferably used in producing the polyimide film in the present invention is not particularly limited, but RF plasma treatment in a vacuum, microwave plasma treatment, microwave ECR plasma treatment, atmospheric pressure plasma treatment , Corona treatment, etc., including gas treatment containing fluorine, ion implantation treatment using ion source, treatment using PBII method, flame treatment, intro treatment, etc.
  • RF plasma treatment, microwave plasma treatment, and atmospheric pressure plasma treatment in vacuum are preferable.
  • the effects of plasma treatment include the addition of surface functional groups, the change in contact angle associated therewith, the improvement of adhesion, the removal of surface contamination, and the removal of irregularly shaped objects, called desmears, etc. Has the effect of etching.
  • Polyimide is highly resistant to acid, so even in an extremely thin layer, if polyimide is on the surface of the lubricant (particle), the acid will not directly contact the surface of the lubricant (particle), so it will not be eroded by the acid.
  • the polymer polyimide layer
  • the acid is in direct contact with the surface of the lubricant (particles). It is possible to etch only the lubricant. It is considered that at least a part of the lubricant in the vicinity of the film surface is dissolved and removed by etching of the lubricant to produce a crater. At this time, the polyimide is not etched.
  • the polyimide film of the first invention of the present application having 2 to 100 craters with a diameter of 10 to 500 nm per 100 ⁇ m 2 is obtained.
  • the polyimide film according to the first preferred embodiment of the first invention of the present application in which Ra on the other surface is 1.0 to 4.0 nm can be obtained.
  • the polyimide film is provided with a smoothness required for joining and laminating on one side having a crater without an adhesive with an inorganic layer.
  • the present invention has two or more craters having a diameter of 10 to 500 nm per 100 ⁇ m 2 when both surfaces of the film containing a lubricant are subjected to the above plasma treatment and acid treatment when observed by the AFM method.
  • the polyimide film according to the second preferred embodiment of the first invention is obtained.
  • the polyimide film is provided with a smoothness necessary for producing a fine electric circuit in addition to adhesiveness on both sides.
  • the surface of the lubricant-containing polyimide layer is subjected to plasma treatment, and the vicinity of the surface
  • the average surface roughness Ra of one surface of the film is a smooth surface having a thickness of 0.2 nm to 1.0 nm, and the other surface is
  • a polyimide film according to the third preferred embodiment of the first invention of the present application having 2 to 100 craters with a diameter of 10 to 500 nm per 100 ⁇ m 2 is obtained.
  • the polyimide film has a crater on one side to which a smoothness necessary for bonding and laminating without an adhesive with an inorganic layer is provided, and the other side is a smooth surface with Ra of 0.2 nm to 1.0 nm.
  • Ra exceeds 2.0 nm, the metal foil film formed thereon is adversely affected by adhesiveness, smoothness and the like.
  • This smoothness can be produced by using a polyamic acid solution for forming a polyimide (polyimide precursor solution) without using a lubricant, but it is difficult to obtain a smoothness of less than 0.2 nm. Even in such a case, the adhesiveness and smoothness are not so effective.
  • a polyamic acid solution for forming a polyimide containing a lubricant on one side, roll winding property at the time of film formation and appropriate slipperiness are imparted, and film production becomes easy.
  • a polyimide film having 2 to 100 craters with a diameter of 10 to 500 nm per 100 ⁇ m 2 has an appropriate peel strength in bonding lamination without an adhesive with an inorganic layer. It will have.
  • Crater of 100 [mu] m 2 per 2-100 of desirably, 100 [mu] m 2 per 5-30 in diameter 10 ⁇ 500 nm, preferably crater diameter 30 ⁇ 100 nm are those having a diameter less than 10nm
  • the adhesive If the thickness exceeds 500 nm, excessive etching is performed, which adversely affects the film strength and does not improve the adhesion.
  • the crater in the present invention refers to a recess having a bulge in the peripheral portion, not a recess like a dent.
  • a polyimide film containing a lubricant can be manufactured by using a polyamide acid solution for polyimide formation (polyimide precursor solution) to which a lubricant is added. Slip properties are imparted and film production is facilitated.
  • Suitable conditions for plasma treatment of the present invention oxygen plasma, CF4, C, etc. 2 F 6 plasma containing fluorine such as chemical plasma that is high etching effect is known, or physically as Ar plasma It is desirable to use plasma with a high effect of applying energy to the polyimide surface and physically etching it. Further, it is also preferable to add plasma such as CO 2 , H 2 , N 2 , a mixed gas thereof, or further water vapor.
  • plasma having high plasma energy density, high kinetic energy of ions in the plasma, and high number density of active species is desirable. For this reason, microwave plasma, microwave ECR plasma, plasma irradiation with an ion source that easily implants high-energy ions, PBII method, and the like are also desirable.
  • other means that can be used as means for allowing the acid to directly contact the surface of the lubricant (particles) other than plasma treatment include polishing with a pad including a case where a chemical solution is used in combination, brush Examples include polishing, polishing with a sponge soaked with a chemical solution, polishing with a polishing pad containing abrasive particles, sand blasting, wet blasting, and the like.
  • the acid treatment in the present invention includes immersion in HF or BHF chemical solution and application of these chemical solutions. At this time, ultrasonic cleaning or the like may be used together.
  • the concentration of HF is preferably 20% or less and 10% to 3%. If it is thinner than this, the etching time takes and the productivity is lowered, and if it is thicker than this, the etching time is too early and it is exposed to the chemical solution more than necessary.
  • acid treatment preferably HF aqueous solution or BHF aqueous solution has an action of dissolving SiO 2 and glass, and is frequently used in the semiconductor industry.
  • the efficiency of HF SiO 2 dissolution has been well studied, and the SiO 2 etching rate of 10% HF is about 12 liters / sec at room temperature.
  • the SiO 2 lubricant of about 80 nm in about 1 minute can be sufficiently performed by contact with the liquid and renewal of the liquid. Because of such knowledge and use results, SiO 2 is preferable as a lubricant type. However, the type of lubricant is not limited to SiO 2 .
  • Plasma treatment and acid treatment methods include plasma treatment on one side of the polyimide film and acid treatment on both sides, plasma treatment on one side of the polyimide film and acid treatment on one side, both sides of the polyimide film Examples of the method include performing plasma treatment and acid treatment on one side, and may be appropriately selected and adopted.
  • plasma treatment on one side is performed by applying plasma treatment only to the surface of the polyimide film that is not in contact with the electrode by placing the film in contact with the electrode on one side in the plasma treatment with parallel plate electrodes.
  • double-sided processing can be performed by placing a polyimide film in a state where it is electrically floated in a space between two electrodes.
  • single-side processing can be performed by performing plasma processing in a state where a protective film is attached to one side of a polyimide film.
  • the acid treatment can be performed on both sides by immersing the polyimide film in an acid or spraying on both sides. Even when such a processing apparatus is used, acid treatment on only one side can be realized by attaching a protective film to one side of the polyimide film during this processing.
  • the protective film include a PET film with an adhesive and an olefin film.
  • the pressure heat treatment preferably used when laminating and laminating the polyimide film in the present invention on an inorganic layer refers to pressing, laminating, and roll laminating, each of which is performed while applying temperature, preferably These operations are performed in a vacuum.
  • Press in vacuum for example, press using 11FD manufactured by Imoto Seisakusho, roll type film laminator by vacuum, or film laminator that can apply pressure to the entire glass surface by a thin rubber film after evacuation, for example, by Meiki Seisakusho MVLP
  • a method such as vacuum lamination can be used.
  • the polyimide film of the present invention is a polyimide film obtained by the reaction of aromatic diamines and aromatic tetracarboxylic acids, and has a linear expansion coefficient (both in the film length direction and width direction) of ⁇ 5 ppm / ° C. a ⁇ + 15 ppm / ° C., and at least one side of the film has a crater 100 [mu] m 2 per 2-100 of diameter 10 ⁇ 500 nm when observed by AFM method, a polyimide film, an aromatic diamine and an aromatic
  • the polyimide film whose group tetracarboxylic acid is the following combination is preferable.
  • a lubricant (particle) is contained in a polyimide precursor solution obtained by a reaction between an aromatic diamine and an aromatic tetracarboxylic acid to obtain a polyimide film, and the polyimide film is used.
  • polyimide is a green film (precursor film or polyamic acid film) by applying a polyamic acid (polyimide precursor) solution obtained by reacting diamines and tetracarboxylic anhydride in a solvent to a support and drying.
  • the green film is obtained by subjecting the green film to high-temperature heat treatment on the support or in a state where it is peeled off from the support, thereby carrying out a dehydration ring-closing reaction.
  • the solvent used in the solution include N-methyl-2-pyrrolidone, N, N-dimethylformamide, N, N-dimethylacetamide and the like.
  • Specific examples of the aromatic diamine having a benzoxazole structure preferably used in the present invention include the following, and the diamine can be used alone or in combination of two or more.
  • the molecular structure of aromatic diamines having a benzoxazole structure is not particularly limited, and specific examples include the following.
  • amino (aminophenyl) benzoxazole isomers are preferable from the viewpoint of ease of synthesis, and 5-amino-2- (p-aminophenyl) benzoxazole is more preferable.
  • each isomer refers to each isomer in which the two amino groups of amino (aminophenyl) benzoxazole are determined according to the coordinate position (eg, “Formula 1” to “Formula 4” above). Each compound described in the above. These diamines may be used alone or in combination of two or more.
  • one or two or more diamines exemplified below may be used in combination as long as they are 30 mol% or less of the total diamine.
  • diamines include 4,4′-bis (3-aminophenoxy) biphenyl, bis [4- (3-aminophenoxy) phenyl] ketone, and bis [4- (3-aminophenoxy) phenyl].
  • aromatic tetracarboxylic acid anhydrides used in the present invention include the following.
  • tetracarboxylic dianhydrides may be used alone or in combination of two or more.
  • the solvent used when the polyamic acid is obtained by reacting (polymerizing) the aromatic tetracarboxylic acid and the aromatic diamine is not particularly limited as long as it dissolves both the raw material monomer and the produced polyamic acid.
  • polar organic solvents such as N-methyl-2-pyrrolidone, N-acetyl-2-pyrrolidone, N, N-dimethylformamide, N, N-diethylformamide, N, N-dimethylacetamide, dimethylsulfoxide, Examples include hexamethylphosphoric amide, ethyl cellosolve acetate, diethylene glycol dimethyl ether, sulfolane, and halogenated phenols.
  • the amount of the solvent used may be an amount sufficient to dissolve the monomer as a raw material.
  • the weight of the monomer in the solution in which the monomer is dissolved is usually 5 to 40% by weight, The amount is preferably 10 to 30% by weight.
  • the conditions for the polymerization reaction (hereinafter also simply referred to as “polymerization reaction”) for obtaining the polyamic acid may be conventionally known conditions.
  • the polymerization reaction is carried out in an organic solvent at a temperature range of 0 to 80 ° C. Stirring and / or mixing continuously for min to 30 hours. If necessary, the polymerization reaction may be divided or the temperature may be increased or decreased. In this case, the order of adding both monomers is not particularly limited, but it is preferable to add aromatic tetracarboxylic acid anhydrides to the solution of aromatic diamines.
  • the weight of the polyamic acid in the polyamic acid solution obtained by the polymerization reaction is preferably 5 to 40% by weight, more preferably 10 to 30% by weight.
  • the viscosity of the solution is measured with a Brookfield viscometer (25 ° C.). From the viewpoint of liquid feeding stability, it is preferably 10 to 2000 Pa ⁇ s, and more preferably 100 to 1000 Pa ⁇ s.
  • Vacuum degassing during the polymerization reaction is effective in producing a good quality polyamic acid solution.
  • polymerization by adding a small amount of terminal blockers to aromatic diamine before polymerization reaction.
  • the end-capping agent include compounds having a carbon-carbon double bond such as maleic anhydride.
  • the amount of maleic anhydride used is preferably 0.001 to 1.0 mole per mole of aromatic diamine.
  • a green film self-supporting precursor film
  • the application of the polyamic acid solution to the support includes, for example, casting from a die with a slit, extrusion by an extruder, and the like, but is not limited thereto, and conventionally known solution application means can be appropriately used.
  • the above-mentioned lubricant is added to and contained in the polyimide to give fine irregularities on the surface of the layer (film). It is preferable to ensure slipperiness.
  • it is necessary to contain it in the range of 0.05 to 50% by mass with respect to at least one polyimide, preferably 0.1 The range is from 3 to 3% by mass, and more preferably from 0.20 to 1.0% by mass.
  • the average linear expansion coefficient between 30 and 300 ° C. of the polyimide film in the present invention is more preferably ⁇ 5 ppm / ° C. to +15 ppm / ° C., and most preferably 1 ppm / ° C. to +10 ppm / ° C. If it is out of this range, the difference in the coefficient of linear expansion from the inorganic substrate becomes large, so that the film and the inorganic layer are easily peeled off during the process of applying heat, making it difficult to use.
  • the linear expansion coefficient of the polyimide film in the present invention uses an average value between 30 and 200 ° C.
  • the temperature range of interest varies depending on the application, and in consideration of the process at a high temperature
  • the range of 30 ° C. to 400 ° C. it may be in the range of 100 ° C. to 400 ° C.
  • the operating temperature range is ⁇ 50 ° C. to 150 ° C. In some cases, the temperature range may be emphasized.
  • the linear expansion coefficient in the present invention is calculated as an average value measured between 30 to 300 ° C. as CTE.
  • CTE may change in this temperature range for polyimide films, but even if the lower limit of measurement is replaced with 0 ° C, 30 ° C, 50 ° C, etc. It is possible to replace the upper limit of measurement with 200 ° C, 300 ° C, or 400 ° C.
  • a polyimide film obtained by a reaction between an aromatic tetracarboxylic acid having a linear expansion coefficient of ⁇ 5 ppm / ° C. to +15 ppm / ° C. and an aromatic diamine, and when one surface thereof is observed by an AFM method
  • At least one surface of a substrate made of a kind of inorganic layer selected from wafer and metal is subjected to silane coupling treatment, the silane coupling treatment surface and the polyimide film are overlapped, and both are bonded by pressure.
  • the laminated body to be manufactured can be manufactured.
  • Examples of the pressurizing method include a normal press in the air or a press in a vacuum. In order to obtain a stable peel strength on the entire surface, a press in a vacuum is preferable. As for the degree of vacuum, a vacuum by a normal oil rotary pump is sufficient, and it is sufficient if it is about 10 Torr or less.
  • a preferable pressure for pressing the sample is 1 MPa to 20 MPa, more preferably 3 to 10 MPa. If the pressure is high, the substrate may be damaged. If the pressure is low, a portion that does not adhere may come out.
  • the preferable temperature is 150 ° C. to 400 ° C., more preferably 250 ° C. to 350 ° C., if the temperature is high, the film is damaged, and if the temperature is low, the adhesion is weak. In the heating and pressurizing treatment, the method using the roll described above is preferably used.
  • the part is not particularly limited, but is preferably filled with a metal whose main component is a metal such as Cu, Al, Ag, Au, or formed by a mechanical drill or laser drilling.
  • Examples of the formed holes and the wall surfaces of the holes include a metal film formed by sputtering, electroless plating seed layer formation, or the like.
  • an adhesive layer is not interposed between the inorganic layer (substrate made of an inorganic substance) and the polyimide film, and the intervening is Si derived from the silane coupling agent. Only those containing more than 10% by weight.
  • the silane coupling agent layer the intermediate layer can be made thin, so that there are few degassing components during heating, it is difficult to elute even in the wet process, and even if the elution occurs, there is an effect that it remains in a very small amount.
  • the layer derived from the silane coupling agent has many heat-resistant silicon oxide components and has heat resistance at a temperature of about 400 ° C.
  • the layer derived from this silane coupling agent is less than 0.4 ⁇ m and is usually prepared. Then, it becomes about 0.2 ⁇ m or less, and the range to be used is 100 nm or less (0.1 ⁇ m or less), preferably 50 nm or less, more preferably 10 nm. In processes where it is desired to have as little silane coupling agent as possible, even a thickness of 5 nm or less can be used. If the thickness is 1 nm or less, the peel strength may be reduced, or a portion that is not partially attached may appear.
  • the planar portion of the inorganic layer (substrate made of an inorganic material) is desirably sufficiently flat, and the surface roughness PV value is 50 nm or less, and more desirably 20 nm or less. Rougher than this, the peel strength decreases.
  • Examples of the semiconductor element in the present invention include a solar cell, a thin film transistor, a MEMS element, a sensor, and a logic circuit.
  • the solar cell using the film of the present invention as a substrate is formed by forming a laminate including a photoelectric conversion layer made of a semiconductor on the above-described film base of the laminate.
  • the said laminated body has a photoelectric converting layer which converts the energy of sunlight into an electrical energy as an essential structure, and usually further has an electrode layer etc. for taking out the obtained electrical energy.
  • a laminated structure in which a photoelectric conversion layer is sandwiched between a pair of electrode layers will be described as a typical example of the laminated body formed so as to constitute a film-like solar cell.
  • a structure in which several photoelectric conversion layers are stacked can be said to be a solar cell of the present invention if it is produced by PVD or CVD.
  • the laminated structure formed in the present invention is not limited to the embodiment described below, and the structure of the laminated body of the solar cell of the prior art may be referred to as appropriate, and a protective layer and known auxiliary means may be added.
  • One electrode layer (hereinafter also referred to as a back electrode layer) of the pair of electrode layers is preferably formed on one main surface of the film substrate.
  • the back electrode layer can be obtained by laminating a conductive inorganic material by a method known per se, for example, a CVD (Chemical Vapor Deposition) method or a sputtering method.
  • conductive inorganic materials include metal thin films such as Al, Au, Ag, Cu, Ni, and stainless steel, and oxide semiconductors such as In2O3, SnO2, ZnO, Cd2SnO4, and ITO (In2O3 with Sn added). Examples include conductive materials.
  • the thickness of the back electrode layer is not particularly limited, and is usually about 30 to 1000 nm.
  • the back electrode layer is a metal thin film. Further, even if a film formation that does not use a vacuum such as Ag paste is used for extracting some electrodes, it can be said to be the solar cell of the present invention.
  • the photoelectric conversion layer for converting the energy of sunlight into electric energy is a layer made of a semiconductor, and a compound semiconductor thin film (chalcopyrite structure semiconductor thin film) made of a group I element, a group III element and a group VI element, CuInSe2 ( CIS) film, or a Cu (In, Ga) Se2 (CIGS) film (hereinafter collectively referred to as a CIS film) in which Ga is dissolved, and a layer made of a silicon-based semiconductor.
  • the silicon-based semiconductor include a thin film silicon layer, an amorphous silicon layer, and a polycrystalline silicon layer.
  • the photoelectric conversion layer may be a laminate having a plurality of layers made of different semiconductors.
  • dye may be sufficient.
  • an organic thin film semiconductor made of an organic compound such as a conductive polymer or fullerene may be used.
  • the thin film silicon layer is a silicon layer obtained by a plasma CVD method, a thermal CVD method, a sputtering method, a cluster ion beam method, a vapor deposition method, or the like.
  • the amorphous silicon layer is a layer made of silicon having substantially no crystallinity. The lack of crystallinity can be confirmed by not giving a diffraction peak even when irradiated with X-rays.
  • Means for obtaining an amorphous silicon layer are known, and examples of such means include a plasma CVD method and a thermal CVD method.
  • the polycrystalline silicon layer is a layer made of an aggregate of microcrystals made of silicon.
  • the above amorphous silicon layer is distinguished by giving a diffraction peak by irradiation with X-rays.
  • Means for obtaining a polycrystalline silicon layer are known, and such means include means for heat-treating amorphous silicon.
  • the photoelectric conversion layer used in the present invention is not limited to a silicon-based semiconductor layer, and may be, for example, a thick film semiconductor layer.
  • the thick film semiconductor layer is a semiconductor layer formed from a paste of titanium oxide, zinc oxide, copper iodide or the like.
  • the means for constituting the semiconductor material as the photoelectric conversion layer may refer to a known method as appropriate.
  • an a-Si (n layer) of about 20 nm is formed by performing high-frequency plasma discharge in a gas obtained by adding phosphine (PH3) to SiH4 at a temperature of 200 to 500 ° C., and then using only SiH4 gas.
  • a-Si (i layer) can be formed, followed by adding diborane (B2H6) to SiH4 to form about 10 nm of p-Si (p layer).
  • an electrode layer (hereinafter also referred to as a current collecting electrode layer) provided on the side opposite to the film substrate is formed by solidifying a conductive paste containing a conductive filler and a binder resin. It may be an electrode layer or a transparent electrode layer.
  • Transparent electrode layers include In2O3, SnO2, ZnO, Cd2SnO4, ITO (In2O3 with Sn added)
  • An oxide semiconductor-based material such as can be preferably used.
  • a film-like solar cell in which transparent electrode / p-type a-Si / i-type a-Si / n-type a-Si / metal electrode / polymer film are laminated in this order, which is a preferred embodiment of the present invention.
  • the p layer may be a-Si
  • the n layer may be polycrystalline silicon
  • a thin and doped a-Si layer may be inserted between them.
  • an antireflection layer, a surface protective layer, or the like may be added in addition to the above structure.
  • a thin film transistor is one in which a semiconductor layer constituting a transistor and an insulating film, an electrode, a protective insulating film constituting an element, and the like are formed by depositing a thin film. It is usually distinguished from silicon wafers that use silicon as the semiconductor layer. Usually, a thin film is produced by a method using a vacuum such as PVD (physical vapor deposition) such as vacuum vapor deposition or CVD (chemical vapor deposition) such as plasma CVD. For this reason, what is not a single crystal like a silicon wafer is included. Even if Si is used, it includes microcrystalline silicon TFT, high-temperature polysilicon TFT, low-temperature polysilicon TFT, oxide semiconductor TFT, organic semiconductor TFT, and so on.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • MEMS elements include those created using MEMS technology.
  • Inkjet printer heads, probes for scanning probe microscopes, contactors for LSI floating bars, optical spatial modulators for maskless exposure, optical integrated elements, infrared sensors Flow rate sensor, acceleration sensor, MEMS gyro sensor, RF Includes video switches using MEMS switches, internal and external blood pressure sensors, grating light valves, and digital micromirror devices.
  • Strain gauge (strain gauge), load cell, semiconductor pressure sensor , Photo sensor, photoelectric element, photodiode, magnetic sensor, contact temperature sensor, thermistor temperature sensor, resistance temperature sensor temperature sensor, thermocouple temperature sensor , Non-contact temperature sensor, radiation thermometer, microphone, ion concentration sensor, gas concentration sensor, displacement sensor, potentiometer, differential transformer displacement sensor, rotation angle sensor, linear encoder, tachometer generator, rotary encoder, optical position sensor (PSD ), Ultrasonic distance meter, capacitance displacement meter , Laser doppler vibrometer, laser doppler velocimeter, gyro sensor, accelerometer, earthquake sensor, one dimensional image, linear image sensor, 2D image, CCD image sensor, CMOS image sensor, Liquid, Leak sensor (Leak sensor), Liquid sensor (Level sensor), Hardness sensor, Electric field sensor, current sensor, voltage sensor, power sensor, infrared sensor, radiation sensor, humidity sensor, odor sensor, flow sensor, tilt sensor, It includes a vibration sensor,
  • the logic circuit includes a logic circuit based on NAND and OR and a circuit synchronized by a clock.
  • Tensile modulus, tensile breaking strength and tensile breaking elongation of a polymer film Tested by measuring a polyimide film to be measured into strips of 100 mm ⁇ 10 mm in the flow direction (MD direction) and the width direction (TD direction), respectively. A piece. Using a tensile tester (manufactured by Shimadzu Corp., Autograph (R) model name AG-5000A) under the conditions of a tensile speed of 50 mm / min and a distance between chucks of 40 mm, the tensile modulus of elasticity and tensile rupture in each of the MD and TD directions. Strength and tensile elongation at break were measured.
  • CTE Linear expansion coefficient
  • the Ra value measurement surface morphology was measured using a scanning probe microscope with a surface physical property evaluation function (SP300 / nonavi, manufactured by SII Nanotechnology Inc.). The measurement was performed in the DFM mode, and DF3 or DF20 manufactured by SII Nano Technology Co., Ltd. was used as the cantilever. The scanner used was FS-20A, the scanning range was 10 ⁇ m square, and the measurement resolution was 512 ⁇ 512 pixels. For the measurement image, after performing the secondary inclination correction, if noise accompanying the measurement is included after the observation, other flattening processing is appropriately used. For example, the flat processing is performed. Thereafter, Ra value and PV value were calculated by software attached to the apparatus, and the same operation was performed by changing three extraction (photographing) areas, and an average value of the calculated Ra value and PV value was adopted.
  • SP300 / nonavi manufactured by SII Nanotechnology Inc.
  • Average particle size of inorganic particles Inorganic particles to be measured are dispersed in a solvent as described later, and the particle size distribution is determined by a laser scattering particle size distribution analyzer LB-500 manufactured by Horiba, Ltd. The weight (volume) average particle size CV value was calculated. 8).
  • Measuring method of silane coupling agent layer thickness The silane coupling layer thickness was determined by measuring the thickness of a Si wafer. The film thickness was measured by ellipsometry, and the measuring instrument used was FE-5000 manufactured by Hottal. The hardware specifications of this measuring instrument are as follows.
  • the wavelength dependence C1 to C6 was obtained by the following formula.
  • AFM method A crater measurement on the surface of the polyimide film was performed using a scanning probe microscope with a surface physical property evaluation function (SP300 / nanonavi manufactured by SII Nanotechnology Inc.). The measurement was performed in the DFM mode, and DF3 or DF20 manufactured by SII Nano Technology Co., Ltd. was used as the cantilever. The scanner used was FS-20A, and the scanning range was a 10 ⁇ m square measurement image. The measurement resolution was 1024 ⁇ 512 pixels.
  • the shape of the crater portion was obtained after correcting the secondary inclination with the software attached to the apparatus.
  • the crater shape has a depression after it rises once from the flat part.
  • the distance between the maximum heights in the cross-section at the position of the diameter is the diameter of the crater part.
  • the same operation was performed by changing the extraction (photographing) area at three places, and the average value of the diameters of the calculated craters was adopted.
  • the obtained 10 ⁇ m square AFM image was subjected to particle analysis by software, and the number of craters was measured.
  • a binarization operation for classifying into two parts that is, a part having a higher position and a part having a lower position according to a certain threshold, was first performed.
  • the threshold value the position of 12% of the lubricant particle diameter from the maximum point of the distribution of information in the height direction of the AFM image was used as a threshold value, and the position 10 nm higher when the lubricant diameter was 80 nm.
  • This number was obtained by image processing by creating a black and white image by binarization and taking out an annular portion of the image.
  • the recognition of the annular shape can be obtained by comparing the image filled in the ring with the image not filled in because an operation of filling the enclosed circle is possible. Only the inside of the ring is extracted by obtaining the image logical product of the image obtained by inverting the image filled in the ring and the image not filled in the ring.
  • the above operation is realized by the image processing software ImageJ. Calculate the number of craters by counting craters with a diameter of 10 to 500 nm from the image logical product images obtained by these operations, and perform the same operation by changing the extraction (photographing) area at three locations. The average value was adopted.
  • Snowtex (DMAC-ST30, manufactured by Nissan Chemical Industries, Ltd.) obtained by dissolving in mass parts N, N-dimethylacetamide and dispersing colloidal silica in dimethylacetamide was added so that the amount of silica was as shown in Table 2, and the temperature was adjusted to 20
  • the polyamic acid solutions B1 to B3 were obtained by reacting in the same manner while maintaining the temperature at or below °C.
  • the polyamic acid solution obtained in the production example was coated on a stainless steel endless continuous belt mirror-finished using a die coater (coating width 1240 mm) and dried at 90 to 115 ° C. for 10 minutes.
  • the polyamic acid film which became self-supporting after drying was peeled off from the support and cut at both ends to obtain respective green films.
  • the obtained green film is passed through a pin tenter having a pin sheet in which pins are arranged so that the pin interval is constant when the pin sheets are arranged, and the film is held by inserting the end of the film into the pin.
  • the pin sheet interval is adjusted so that it does not break and unnecessary tarmi is generated, and the final pin sheet interval is 1140 mm, and it is conveyed so that the first stage is 170 ° C. for 2 minutes, and the second stage is 230.
  • the imidization reaction was allowed to proceed by heating for 2 minutes at 0 ° C and 6 minutes at 485 ° C for the third stage. Then, it is cooled to room temperature in 2 minutes, and the portions with poor flatness at both ends of the film are cut off with a slitter, rolled up into a roll, and each of the polyimide films 1 to 5 and 7 to 9 exhibiting brown color is obtained. Obtained.
  • Tables 5 and 6 show measurement results such as characteristics of the obtained polyimide films.
  • polyimide film 6 The polyamic acid solution A1 was coated on the non-lubricant surface of polyethylene terephthalate film A-4100 (manufactured by Toyobo Co., Ltd.) using a comma coater, dried at 110 ° C. for 5 minutes, and without peeling off from the support. The laminate of the polyamic acid film A1 layer and the support was wound into a roll. The thickness of the obtained polyamic acid film A1 layer was 30 ⁇ m after becoming a polyimide film.
  • a roll of a laminate of the obtained polyamic acid film A1 layer and a support was attached to the unwinding part of the film forming machine, and the above polyamic acid solution A2 was converted to a polyimide film so that the thickness became 8 ⁇ m.
  • the polyamic acid film A1 layer surface was coated using a coater and dried at 110 ° C. for 20 minutes to obtain a polyamic acid film having a two-layer structure.
  • the multilayer polyamic acid film is peeled from the support, it is passed through a pin tenter having three heat treatment zones and subjected to heat treatment at the first stage of 150 ° C. ⁇ 2 minutes, the second stage of 220 ° C. ⁇ 2 minutes, and the third stage of 475 ° C. ⁇ 4 minutes. And slit to 500 mm width to obtain a multilayer polyimide film.
  • the resulting film was designated as film 6.
  • Table 5 shows the measurement results such as the characteristics of the obtained polyimide film.
  • a multilayer polyimide film was obtained in exactly the same manner as in polyimide film preparation 6 except that the polyamic acid solution A1 was changed to C1 and the polyamic acid solution A2 was changed to C2.
  • the resulting film was designated as film 10.
  • Table 6 shows the measurement results such as the properties of the obtained polyimide film.
  • Example 11 of film creation The polyamic acid solution A2 was coated on the non-slip surface of polyethylene terephthalate film A-4100 (manufactured by Toyobo Co., Ltd.) using a comma coater, dried at 110 ° C. for 5 minutes, and then not peeled off from the support. The polyamic acid film was wound up. The obtained polyamic acid film is attached to the unwinding part of the film forming machine, and the above polyamic acid solution A4 is coated with a polyamide coater using a comma coater so that the coating amount of the polyamic acid solution A2 becomes the thickness ratio shown in Table 7. The acid film surface was coated and dried at 110 ° C.
  • This multilayer polyamic acid film is passed through a pin tenter having three heat treatment zones, heat-treated at 150 ° C. for 2 minutes for the first stage, 220 ° C. for 2 minutes for the second stage, and 475 ° C. for 4 minutes for the third stage, and slit to 500 mm width
  • a multilayer polyimide film was obtained.
  • film A a film having a slightly adhesive layer on a PET film was laminated on the polyamic acid solution A2 side, and then wound.
  • the resulting film was designated as film 11.
  • Example 12 of film production A film 12 was obtained in the same manner as in Example 11 except that the polyamic acid solution A4 was changed to A1. The contents are shown in Table 7 similarly to the film 11.
  • Example 13 of film creation A film 13 was obtained in the same manner as in Preparation Example 11 except that the thickness of each film layer was changed. The contents are shown in Table 7 in the same manner as in Preparation Example 11.
  • Example 14 of film creation A film 4 was obtained in the same manner as in Preparation Example 1, except that the polyamic acid solution A2 was changed to A3. The contents are shown in Table 7 in the same manner as in Preparation Example 11.
  • the unit in the table is ⁇ m in thickness, ppm / ° C. in CTE, and GPa in tensile modulus.
  • CTE and tensile modulus are average values in the flow direction (MD direction) and the width direction (TD direction).
  • Comparative film making example 1 The polyamic acid solution A3 was coated on the non-slip surface of polyethylene terephthalate film A-4100 (manufactured by Toyobo Co., Ltd.) using a comma coater, dried at 110 ° C. for 5 minutes, and then not peeled off from the support. The polyamic acid film was wound up. The obtained polyamic acid film is passed through a pin tenter having three heat treatment zones, and heat treatment is performed at 150 ° C. ⁇ 2 minutes for the first stage, 220 ° C. ⁇ 2 minutes for the second stage, and 475 ° C. ⁇ 4 minutes for the third stage to obtain a width of 500 mm. A single layer polyimide film 15 was obtained by slitting. The contents are also shown in Table 3. The contents are also shown in Table 8.
  • Comparative film production example 2 A single-layer polyimide film 16 was obtained in the same manner as in Comparative Example 1 except that the polyamic acid solution A3 was changed to the polyamic acid solution A2. The contents are also shown in Table 8. The film yield and product properties were not satisfactory.
  • the unit in the table is ⁇ m in thickness, ppm / ° C. in CTE, and GPa in tensile modulus.
  • CTE and tensile modulus are average values in the flow direction (MD direction) and the width direction (TD direction).
  • Example 1 (Surface treatment of polyimide film)
  • the polyimide film 1 was surface treated.
  • the processing was performed by RIE mode RF plasma using parallel plate type electrodes as vacuum plasma processing, and single-sided processing was performed.
  • the treatment time is shown in Table 5 by introducing O 2 gas into the vacuum chamber and introducing high frequency power of 13.54 MHz.
  • Subsequent acid treatment was immersed for 3 minutes in 10 mass% HF aqueous solution.
  • the liquid temperature is room temperature. Thereafter, washing with water was sequentially performed in two tanks, dried by air blow, and then dried on a hot plate at 100 ° C. for 5 minutes.
  • Table 9 shows the evaluation results of the obtained film.
  • the evaluation of the surface is an evaluation using the treated surface as the (a layer), and is an evaluation result of evaluating the non-treated surface with another plasma as the (b layer).
  • the unit in the table is ⁇ m in thickness, MPa in tensile strength at break, GPa in tensile modulus, ppm / ° C. in CTE, and nm in Ra.
  • Example 5 to 8 Surface treatment of polyimide film
  • the polyimide film 8 was surface treated.
  • the processing was performed by RIE mode RF plasma using parallel plate type electrodes as vacuum plasma processing, and single-sided processing was performed.
  • the treatment time was described in the table 6 by introducing O 2 gas into the vacuum chamber and introducing high frequency power of 13.54 MHz.
  • Subsequent acid treatment was immersed for 3 minutes in 10 mass% HF aqueous solution.
  • the liquid temperature is room temperature. Thereafter, washing with water was sequentially performed in two tanks, dried by air blow, and then dried on a hot plate at 100 ° C. for 5 minutes.
  • Table 10 shows the evaluation results of the obtained film.
  • the evaluation of the surface is an evaluation using the treated surface as the (a layer), and is an evaluation result of evaluating the other non-treated surface as the (b layer).
  • the unit in the table is ⁇ m in thickness, MPa in tensile strength at break, GPa in tensile modulus, ppm / ° C. in CTE, and nm in Ra.
  • Comparative Example 5 The polyimide film 1 was surface treated. Of the same operations as in Example 1, the one without the plasma treatment is referred to as Comparative Example 5. Of the same operations as in Example 1, the one without the HF immersion treatment is referred to as Comparative Example 2. The polyimide film 8 was surface treated. Of the same operations as in Example 5, the plasma processing is eliminated and Comparative Example 7 is used. Of the same operations as in Example 5, the one without the HF immersion treatment is referred to as Comparative Example 8. Table 12 summarizes the results.
  • the unit in the table is ⁇ m in thickness, MPa in tensile strength at break, GPa in tensile modulus, ppm / ° C. in CTE, and nm in Ra.
  • the unit in the table is ⁇ m in thickness, MPa in tensile strength at break, GPa in tensile modulus, ppm / ° C. in CTE, and nm in Ra.
  • the crater diameter is not measured because there was no crater.
  • Double-sided plasma treatment / single-sided acid treatment (such as a method of bringing acid into contact with one side of the treated film) and single-sided plasma treatment / single-sided acid treatment were carried out in the same manner, but the results were almost the same.
  • Example 9 to 12 Surface treatment of polyimide film
  • the polyimide film 1 was surface treated.
  • the treatment was performed by RIE mode RF plasma using a parallel plate type electrode as vacuum plasma treatment, and double-sided treatment was performed.
  • the treatment time is shown in Table 5 by introducing O 2 gas into the vacuum chamber and introducing high frequency power of 13.56 MHz.
  • Subsequent acid treatment was immersed for 3 minutes in 10 mass% HF aqueous solution.
  • the liquid temperature is room temperature. Thereafter, washing with water was sequentially performed in two tanks, dried by air blow, and then dried on a hot plate at 100 ° C. for 5 minutes.
  • Table 13 shows the evaluation results of the obtained film.
  • the evaluation of the surface was performed on only one surface, and the evaluation results on the other surfaces were almost the same.
  • the unit in the table is ⁇ m in thickness, MPa in tensile strength at break, GPa in tensile modulus, ppm / ° C. in CTE, and nm in Ra.
  • Example 13 to 16 Surface treatment of polyimide film
  • the polyimide film 8 was surface treated.
  • the treatment was performed by RIE mode RF plasma using a parallel plate type electrode as vacuum plasma treatment, and double-sided treatment was performed.
  • the treatment time was listed in the table 6 by introducing O 2 gas into the vacuum chamber and introducing high frequency power of 13.56 MHz.
  • Subsequent acid treatment was immersed for 3 minutes in 10 mass% HF aqueous solution.
  • the liquid temperature is room temperature. Thereafter, washing with water was sequentially performed in two tanks, dried by air blow, and then dried on a hot plate at 100 ° C. for 5 minutes.
  • Table 14 shows the evaluation results of the obtained film. The evaluation of the surface was performed on only one surface, and the evaluation results on the other surfaces were almost the same.
  • the unit in the table is ⁇ m in thickness, MPa in tensile strength at break, GPa in tensile modulus, and ppm / ° C. in CTE.
  • Comparative Example 13 The polyimide film 1 was surface treated. Of the same operations as in Example 9, the plasma processing is eliminated and Comparative Example 13 is used. Of the same operations as in Example 9, the one without the HF immersion treatment is referred to as Comparative Example 14. The polyimide film 8 was surface treated. Of the same operations as in Example 13, the one in which the plasma treatment is eliminated is referred to as Comparative Example 15. Of the same operations as in Example 13, the one without the HF immersion treatment is referred to as Comparative Example 16. Table 16 summarizes the results.
  • the unit in the table is ⁇ m in thickness, MPa in tensile strength at break, GPa in tensile modulus, and ppm / ° C. in CTE.
  • the unit in the table is ⁇ m in thickness, MPa in tensile strength at break, GPa in tensile modulus, and ppm / ° C. in CTE.
  • the unit in the table is ⁇ m in thickness, MPa in tensile strength at break, GPa in tensile modulus, and ppm / ° C. in CTE.
  • Example 15 of film creation The polyamic acid solution C2 was coated on the non-slip surface of polyethylene terephthalate film A-4100 (manufactured by Toyobo Co., Ltd.) using a comma coater, dried at 110 ° C. for 5 minutes, and then not peeled off from the support. The polyamic acid film was wound up. The obtained polyamic acid film is attached to the unwinding part of the film forming machine, and the above polyamic acid solution C3 is polyamide-coated using a comma coater so that the coating amount of the polyamic acid solution C2 becomes the thickness ratio shown in Table 17.
  • the acid film surface was coated and dried at 110 ° C for 20 minutes to obtain a polyamic acid film having a two-layer structure.
  • the coating thickness was adjusted so that the thickness of the entire two layers became the thickness shown in Table 5 after the heat treatment.
  • This multilayer polyamic acid film is passed through a pin tenter having three heat treatment zones, heat-treated at 150 ° C. for 2 minutes for the first stage, 220 ° C. for 2 minutes for the second stage, and 475 ° C. for 4 minutes for the third stage, and slit to 500 mm width
  • a multilayer polyimide film was obtained.
  • film A a film with a slightly adhesive layer on a PET film was laminated on the polyamic acid solution C2 side, and then wound.
  • the resulting film was designated as film 17.
  • Example 16 of film production A film 18 was obtained in the same manner as in Preparation Example 15 except that the polyamic acid solution B1 was changed to C1 and B2 was changed to C2. The contents are shown in Table 17 as in Preparation Example 15.
  • Comparative Film Creation Example 3 The polyamic acid solution C2 was coated on the non-slip surface of polyethylene terephthalate film A-4100 (manufactured by Toyobo Co., Ltd.) using a comma coater, dried at 110 ° C. for 5 minutes, and then not peeled off from the support. The polyamic acid film was wound up. The obtained polyamic acid film is passed through a pin tenter having three heat treatment zones, and the first stage 150 ° C. ⁇ 2 minutes, the second stage 220 ° C. ⁇ 2 minutes, and the third stage 475 ° C. ⁇ 4 minutes are performed to obtain a width of 500 mm. A single layer polyimide film 19 was obtained by slitting.
  • a film (film A) with a slightly adhesive layer was laminated on a PET film and then wound.
  • the resulting film was designated as Film 19.
  • the contents are also shown in Table 17. The film yield and product properties were not satisfactory.
  • Comparative Film Preparation Example 4 A single-layer polyimide film 20 was obtained in the same manner as in Comparative Example 3 except that the polyamic acid solution C2 was changed to the polyamic acid solution B2. The contents are also shown in Table 17. The film yield and product properties were not satisfactory.
  • the unit in the table is ⁇ m in thickness, ppm / ° C. in CTE, and GPa in tensile modulus.
  • CTE and tensile modulus are average values in the flow direction (MD direction) and the width direction (TD direction).
  • Example 17 Using polyimide film 11, the polyimide side (a layer surface) containing the lubricant of this film is vacuum plasma treated, then the same surface is acid treated, then air-dried, on a hot plate at 110 ° C. for 1 hour The dehydration process was performed.
  • the vacuum plasma treatment was a treatment by RIE mode RF plasma using parallel plate type electrodes.
  • O2 gas was introduced into the vacuum chamber and a high frequency power of 13.54 MHz was introduced for a treatment time of 3 minutes.
  • Subsequent acid treatment was immersed in a 10 wt% HF aqueous solution for 1 minute, washed and dried to obtain a treated film.
  • Table 18 shows the evaluation results of the obtained film after treatment.
  • Table 18 shows the evaluation results of each of the obtained films after the same treatment as in Example 17 except that 12 to 14 and 17 were used instead of 11.
  • Examples 22 to 26 were carried out in the same manner as in Example 17 except that the time for plasma treatment of the film was changed as shown in Table 19. In addition, the film 17 was used, and the time for plasma treatment of the film was similarly changed as shown in Table 19 to perform the implementations 25 and 26.
  • Comparative Examples 17 to 21 Table 20 shows the evaluation results of the treated film (Comparative Example 17) obtained by performing the treatment in the same manner as in Example 17 except that the treated surface of the film is b layer and the non-treated surface is a layer.
  • Film No. The films Nos. 15, 19, and 20 were not processed because they were not satisfactory in terms of yield and product properties.
  • the treated surface was regarded as (a layer) and the non-treated surface was regarded as (b layer) (hereinafter the same).
  • the polyimide film 11 was surface treated.
  • Comparative Example 18 Of the same operations as in Example 17, the one without the plasma treatment is referred to as Comparative Example 18.
  • Comparative Example 19 Comparative Example 19
  • the polyimide film 17 was surface treated. Of the same operations as in Example 21, the one without the plasma treatment is referred to as Comparative Example 20. Of the same operations as in Example 21, the one without the HF immersion treatment is referred to as Comparative Example 21. Table 20 summarizes the results.
  • the unit is ⁇ m for thickness, ppm / ° C. for CTE, GPa for tensile modulus, and nm for Ra.
  • the number of craters is the average value of craters having a diameter of 10 nm to 500 nm per 100 ⁇ m 2 , and the crater diameter is the average value in units (nm).
  • CTE and tensile modulus were measured in two orthogonal directions, but no difference was observed.
  • the unit is ⁇ m for thickness, ppm / ° C. for CTE, GPa for tensile modulus, and nm for Ra.
  • the number of craters is the average value of craters having a diameter of 10 nm to 500 nm per 100 ⁇ m 2 , and the crater diameter is the average value in units (nm).
  • CTE and tensile modulus were measured in two orthogonal directions, but no difference was observed.
  • the unit is ⁇ m for thickness, ppm / ° C. for CTE, GPa for tensile modulus, and nm for Ra.
  • the number of craters is the average value of craters having a diameter of 10 nm to 500 nm per 100 ⁇ m 2 , and the crater diameter is the average value in units (nm).
  • CTE and tensile modulus were measured in two orthogonal directions, but no difference was observed.
  • the silane coupling agent (3-aminopropyltrimethoxysilane) is diluted to 0.5% with isopropyl alcohol in the glove box in which N2 is flowing, and then washed and dried separately.
  • glass Cornning # 1737 100 mm ⁇ 100 mm
  • SC represents a silane coupling agent
  • SC represents a silane coupling agent
  • SC represents a silane coupling agent
  • the substrate temperature was set at 2 ° C.
  • plasma treatment of the film surface was performed.
  • the plasma treatment conditions were argon gas, frequency 13.56 MHz, output 200 W, gas pressure 1 ⁇ 10 ⁇ 3 Torr, treatment temperature 2 ° C., treatment time 2 minutes.
  • a condition of frequency 13.56 MHz, output 450 W, gas pressure 3 ⁇ 10 ⁇ 3 Torr, a nickel-chromium (chromium 10 mass%) alloy target was used, and a DC magnetron sputtering method was performed at 1 nm / second in an argon atmosphere.
  • a nickel-chromium alloy film (underlayer) having a thickness of 7 nm is formed at a rate, and then a coolant whose temperature is controlled to 2 ° C.
  • the substrate temperature is set to 2 ° C.
  • Sputtering was performed in contact with the SUS plate of the substrate holder. Copper was deposited at a rate of 10 nm / second to form a copper thin film having a thickness of 0.25 ⁇ m. A base metal thin film forming film was obtained from each film. The thickness of the copper and NiCr layers was confirmed by the fluorescent X-ray method. Then, the base metal thin film formation film from each film was fixed to the frame made of Cu, and a thick copper layer was formed using a copper sulfate plating bath.
  • the electrolytic plating conditions were immersed in an electrolytic plating solution (copper sulfate 80 g / l, sulfuric acid 210 g / l, HCl, a small amount of brightener), and electricity was passed through 1.5 Adm2. Thereby, a thick copper plating layer (thickening layer) having a thickness of 4 ⁇ m was formed, followed by heat treatment and drying at 120 ° C. for 10 minutes to obtain a metallized polyimide film / glass laminate. Using each obtained metallized polyimide film / glass laminate, photoresist: FR-200, manufactured by Shipley Co., Ltd.
  • Electroless tin plating was performed to a thickness of 5 ⁇ m. Thereafter, annealing was performed at 125 ° C. for 1 hour. The pattern from each polyimide film was evaluated by observing drool, pattern residue, pattern peeling, and the like with an optical microscope.
  • Polyimide films Nos. 1 to 8 in Examples 1 to 8 For 1A to 3D, a good pattern with no sagging, no pattern remaining, and no pattern peeling was obtained. Polyimide film Nos. 1 to 4 in Comparative Examples 1 to 4 As for 2A to 2D, no pattern, residual pattern, and pattern peeling were observed, and no good pattern was obtained. Polyimide film Nos. With 1E, 1F, 3E, and 3F, the peel strength was about 0.1 N / cm, and the pasting strength was extremely weak, so the process could not be performed. From the results of Application Example 13, the linear expansion coefficient (both in the film length direction and the width direction) is ⁇ 5 ppm / ° C.
  • a film having -100 craters with a diameter of 10 to 500 nm and having another surface of 1.0 to 4.0 nm can obtain an appropriate peel strength in a laminate with an inorganic layer, and these It turned out that it became a laminated body which can endure processes, such as metallization using a laminated body, and a favorable pattern can be obtained also in subsequent pattern creation.
  • SC represents a silane coupling agent
  • SC represents a silane coupling agent
  • SC represents a silane coupling agent
  • Application Example 26 A laminate was prepared and evaluated using the films of Examples 9 to 16 and Comparative Examples 9 to 12 in the same manner as Application Example 13.
  • the linear expansion coefficient (both in the length direction and the width direction of the film) is ⁇ 5 ppm / ° C. to +15 ppm / ° C., and 2 to 100 ⁇ m 2 when both surfaces are observed by the AFM method.
  • a film having 100 craters with a diameter of 10 to 500 nm can obtain an appropriate peel strength in a laminate with an inorganic layer, and can withstand a process such as metallization using these laminates. It turned out that a good pattern can be obtained also in subsequent pattern creation.
  • SC represents a silane coupling agent
  • SC represents a silane coupling agent
  • the silane coupling agent (3-aminopropyltrimethoxysilane) is diluted to 0.5% with isopropyl alcohol in the glove box in which N2 is flowing, and then washed and dried separately.
  • glass Cornning # 1737 100 mm ⁇ 100 mm
  • Application Example 42 A laminate was prepared and evaluated using the films of Examples 17 to 21 and Comparative Examples 17 to 21 by the same method as Application Example 13.
  • the polyimide films of Examples 17 to 21 had good patterns with no sagging, pattern remaining, and pattern peeling. In the polyimide films of Comparative Examples 17 to 21, there were dripping, pattern remaining, and pattern peeling, and none of them had a good pattern.
  • the film having 2 to 100 craters with a diameter of 10 to 500 nm per 100 ⁇ m 2 when the other surface is observed by the AFM method can obtain an appropriate peel strength in a laminate with an inorganic layer. It was found that the laminate could withstand the process of metallization using these laminates, and a good pattern could be obtained in the subsequent pattern formation.
  • the silane coupling agent (3-aminopropyltrimethoxysilane) is diluted to 0.5% with isopropyl alcohol in the glove box in which N 2 is flowing, washed, and dried. Glass (Corning # 1737 100 mm ⁇ 100 mm) was placed on a spin coater, dropped onto the center of rotation, rotated at 500 rpm, and then rotated at 2000 rpm. When the rotation was stopped 30 seconds after dropping, it looked dry.
  • the vacuum press was evacuated with a rotary pump and pressed at 300 ° C. for 10 minutes at a pressure of 10 MPa at a degree of vacuum of 10 +2 Pa or less.
  • polyimide film 1 Prior to this vacuum pressing, polyimide film 1 was used, and this film was subjected to vacuum plasma treatment, followed by acid treatment, followed by air drying and dehydration treatment on a 110 ° C. hot plate for 1 hour.
  • the vacuum plasma treatment was a treatment using RIE mode RF plasma using parallel plate type electrodes.
  • the treatment time was 3 minutes by introducing O 2 gas into the vacuum chamber and introducing high frequency power of 13.54 MHz.
  • Subsequent acid treatment was immersed for 1 min in a 10 wt% HF aqueous solution.
  • Table 29 shows the evaluation results.
  • the sample for measuring peel strength after heating is a laminate sample cooled in a heating furnace of N2 atmosphere after heat treatment at 400 ° C. for 1 hour, and the measurement temperature of peel strength is room temperature.
  • Example 28 The same operation as in Example 27 was performed except that the inorganic layer was a silicon wafer. Table 29 shows the evaluation results.
  • Example 29 This was carried out in the same manner as in Example 27, except that the polyimide layer was changed to a polyimide film 3 of 10 ⁇ m. Table 29 shows the evaluation results.
  • Example 30 Using the polyimide film 1, this film was subjected to a vacuum plasma treatment, followed by an acid treatment, followed by air drying, dehydration treatment on a 110 ° C. hot plate for 1 hour, and then a silane coupling agent treatment.
  • the vacuum plasma treatment was a treatment using RIE mode RF plasma using parallel plate type electrodes.
  • the treatment time was 3 minutes by introducing O 2 gas into the vacuum chamber and introducing high frequency power of 13.54 MHz.
  • Subsequent acid treatment was immersed for 1 min in a 10 wt% HF aqueous solution.
  • Example 31 The process was carried out in the same manner as in Example 27 except that N-2- (aminoethyl) -3-aminopropyltrimethoxysilane was used as the silane coupling agent (3-aminopropyltrimethoxysilane). Table 30 shows the evaluation results.
  • Example 32 The same operation as in Example 27 was performed except that the polyimide layer was film 6 and the A1 surface was affixed. Table 30 shows the evaluation results.
  • Example 33 The process was performed in the same manner as in Example 27 except that the Si wafer was a mirror polished surface of an Al 2 O 3 substrate. Table 30 shows the evaluation results.
  • Example 34 The test was performed in the same manner as in Example 27 except that the treatment time with HF was 0.5 min. Table 30 shows the evaluation results.
  • Example 35 The same operation as in Example 27 was performed except that the polyimide layer was changed to polyimide film 4. Table 31 shows the evaluation results.
  • Example 36 The same operation as in Example 27 was performed except that the polyimide layer was changed to polyimide film 7. Table 31 shows the evaluation results.
  • Example 37 The same operation as in Example 27 was performed except that the polyimide layer was changed to the C1 surface of the polyimide film 10. Table 31 shows the evaluation results.
  • Example 38 The same procedure as in Example 36 was performed except that the treatment time with HF was 0.5 min. Evaluation results and the like are shown in 31.
  • Example 39 This was carried out in the same manner as in Example 36 except that the inorganic layer was a silicon wafer. Table 32 shows the evaluation results.
  • Example 40 The same operation as in Example 30 was performed except that the polyimide layer was changed to polyimide film 7. Table 32 shows the evaluation results.
  • Example 41 This was carried out in the same manner as in Example 31 except that the polyimide layer was changed to polyimide film 7.
  • Table 32 shows the evaluation results.
  • Example 43 This was carried out in the same manner as in Example 27 except that the polyimide layer was changed to polyimide film 17.
  • Table 33 shows the evaluation results.
  • the heating temperature for the peel strength after heating was 200 ° C.
  • Example 44 This was carried out in the same manner as in Example 27 except that the polyimide layer was changed to the polyimide film 18.
  • Table 33 shows the evaluation results.
  • the heating temperature for the peel strength after heating was 200 ° C.
  • Example 45 This was carried out in the same manner as in Example 27 except that the polyimide layer was changed to polyimide film 19.
  • Table 33 shows the evaluation results.
  • the heating temperature for the peel strength after heating was 200 ° C.
  • Example 46 This was carried out in the same manner as in Example 27 except that the polyimide layer was changed to the polyimide film 20.
  • Table 33 shows the evaluation results.
  • the heating temperature for the peel strength after heating was 200 ° C.
  • Example 47 The same operation as in Example 27 was performed except that the polyimide layer was changed to the polyimide film 21.
  • Table 34 shows the evaluation results.
  • the heating temperature of the peel strength after heating in the following examples was 400 ° C.
  • Example 48 The same operation as in Example 27 was performed except that the polyimide layer was changed to the polyimide film 22.
  • Table 34 shows the evaluation results.
  • the film before sticking refers to a film after plasma treatment and acid treatment.
  • the film before sticking refers to a film after plasma treatment and acid treatment.
  • the film before sticking refers to a film after plasma treatment and acid treatment.
  • the film before sticking refers to a film after plasma treatment and acid treatment.
  • the film before sticking refers to a film after plasma treatment and acid treatment.
  • the film before sticking refers to a film after plasma treatment and acid treatment.
  • the temperature of the film can be set by flowing a coolant through the substrate holder.
  • the substrate temperature was set at 2 ° C.
  • plasma treatment of the film surface was performed.
  • the plasma treatment conditions were argon gas, frequency 13.56 MHz, output 200 W, gas pressure 1 ⁇ 10 ⁇ 3 Torr, treatment temperature 2 ° C., treatment time 2 minutes.
  • Copper was deposited at a rate of 10 nm / second to form a copper thin film having a thickness of 0.25 ⁇ m.
  • a base metal thin film forming film was obtained from each film.
  • the thickness of the copper and NiCr layers was confirmed by the fluorescent X-ray method.
  • a base metal thin film forming film from each film was fixed to a Cu frame and a copper sulfate plating bath was used to form a thick copper layer having a thickness described in the table.
  • the electrolytic plating conditions were immersed in an electrolytic plating solution (copper sulfate 80 g / l, sulfuric acid 210 g / l, HCl, a small amount of brightener), and electricity was passed through 1.5 Adm2.
  • a thick copper plating layer (thickening layer) having a thickness of 4 ⁇ m was formed, followed by heat treatment and drying at 120 ° C. for 10 minutes to obtain a metallized polyimide film / glass laminate.
  • photoresist FR-200, manufactured by Shipley Co., Ltd. was applied and dried, then contacted with a glass photomask, and further developed with a 1.2 mass% KOH aqueous solution. .
  • etching with a cupric chloride etching line containing HCl and hydrogen peroxide at 40 ° C.
  • Si thin film creation example In the vacuum plasma CVD apparatus, the laminate 100 mm ⁇ 100 mm prepared in Example 27 was introduced, the substrate temperature was 170 ° C., the reaction gas was introduced into SiSC 4 at 42 sccm, and H 2 at 14 sccm. The pressure was set to 0.15 Torr and discharge was performed to produce an intrinsic Si thin film having a thickness of 500 nm. Even if the thin film was taken out into the atmosphere or peeled off from the glass, a thin film that did not warp or peeled off was obtained. Similarly, Si thin films were produced for Examples 28 to 34. Even if the thin film was taken out into the atmosphere or peeled off from the glass, a thin film that did not warp or peeled off was obtained.
  • Example 5 Before performing the vacuum press, the polyimide film was implemented in the same manner as in Example 27 except that the vacuum plasma treatment was not performed. Table 35 shows the evaluation results.
  • Example 6 The same as Example 27, except that no silane coupling agent was used in the Si wafer layer prior to vacuum pressing. Table 35 shows the evaluation results.
  • Comparative Example 7 The same procedure as in Comparative Example 5 was performed except that the inorganic layer was a Si wafer. Table 35 shows the evaluation results.
  • Example 9 The film used was film 2, and the polyimide film was implemented in the same manner as in Example 27 except that acid treatment was not performed. Table 36 shows the evaluation results.
  • Example 10 (Comparative Example 10) The same operation as in Example 27 was performed except that the vacuum pressing was performed at room temperature. Table 36 shows the evaluation results.
  • Example 13 The same process as in Example 27 was performed except that the polyimide layer was changed to film 4 and acid treatment was not performed. Table 37 shows the evaluation results.
  • Example 14 The same process as in Example 27 was performed except that the polyimide layer was changed to film 7 and acid treatment was not performed. Table 37 shows the evaluation results.
  • Example 18 The same process as in Example 27 was performed except that the polyimide layer was changed to film 17 and acid treatment was not performed. Table 38 shows the evaluation results.
  • the heating temperature for the peel strength after heating was 200 ° C.
  • Example 19 The same procedure as in Example 27 was performed except that the polyimide layer was changed to film 18 and acid treatment was not performed. Table 38 shows the evaluation results.
  • the heating temperature for the peel strength after heating was 200 ° C.
  • Example 20 The same process as in Example 27 was performed except that the polyimide layer was changed to a film 19 and acid treatment was not performed. Table 38 shows the evaluation results. The heating temperature of the peel strength after heating thereafter was 400 ° C.
  • Example 22 The same process as in Example 27 was performed except that the polyimide layer was changed to the film 21 and acid treatment was not performed. Table 39 shows the evaluation results.
  • Example 23 The same process as in Example 27 was performed except that the polyimide layer was changed to the film 22 and acid treatment was not performed. Table 39 shows the evaluation results.
  • the film before sticking refers to a film after plasma treatment and acid treatment.
  • the film before sticking refers to a film after plasma treatment and acid treatment.
  • the film before sticking refers to a film after plasma treatment and acid treatment.
  • the film before sticking refers to a film after plasma treatment and acid treatment.
  • the film before sticking refers to a film after plasma treatment and acid treatment.
  • the polyimide film of the present invention is a polyimide film significant for the production of a laminate bonded to one surface of a kind of inorganic layer selected from a glass plate, a ceramic plate, a silicon wafer, and a metal, and the polyimide film of the present invention is
  • the laminate used can be effectively used for ultra-thin device structures, etc., and the inorganic substrate can be peeled off smoothly if necessary, and has excellent ultra-thin insulation, heat resistance, and dimensional stability. Circuits and devices can be formed on a polymer film with high accuracy.
  • sensors, display devices, probes, integrated circuits, and composite devices thereof, amorphous Si thin film solar cells, Se and CIGS-based compound semiconductor thin film solar cell substrates It is also effective for solar cells using these.
  • the linear expansion coefficient (none in the length direction and width direction of the film) -5 ppm / ° C. ⁇ + was 15 ppm / ° C., and at least one surface 100 [mu] m 2 per 2-100 of diameter 10 ⁇ when observed by AFM method
  • a polyimide film having a crater of 500 nm can obtain an appropriate peel strength in a laminate with an inorganic layer, and can also be a laminate that can withstand a process such as metallization using these laminates.
  • a good pattern can be obtained in the subsequent pattern creation.
  • Device structures such as these ultra-thin sensor display devices, probes, integrated circuits, and composite devices thereof, amorphous Si thin film solar cells, Se and CIGS-based compound semiconductor thin film solar cell substrates, and solar cells using these. It is extremely meaningful for manufacturing and has a significant contribution to industry.

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  • Plasma & Fusion (AREA)
  • Thermal Sciences (AREA)
  • Laminated Bodies (AREA)
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  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

La présente invention a pour but de proposer un film de polyimide résistant à la chaleur qui a une résistance supérieure à la chaleur et qui peut être utilisé dans des produits feuilletés, des cartes de circuits imprimés feuilletés et autres applications de fabrication de dispositifs. À cet effet, l'invention concerne un film composé d'un polyimide obtenu par une réaction entre une diamine aromatique et un acide tétracarboxylique aromatique, le film étant obtenu par l'utilisation d'un film de polyimide contenant un lubrifiant, le traitement d'un côté du film par un plasma, l'exposition d'une partie du lubrifiant sur la surface, et le traitement de la surface par un acide pour dissoudre au moins une partie des particules de lubrifiant dans le voisinage de la surface du film. Dans le film de polyimide, le coefficient d'expansion linéaire (à la fois dans la direction de la longueur et dans la direction de la largeur du film) est de -5 ppm/°C à +15 ppm/°C, et au moins une surface du film présente 2-100 cratères ayant des diamètres de 10-500 nm pour 100 µm2 lorsqu'ils sont observés au microscope à force atomique (AFM).
PCT/JP2011/073295 2010-10-13 2011-10-11 Film de polyimide, son procédé de fabrication et procédé de fabrication de produit feuilleté Ceased WO2012050072A1 (fr)

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* Cited by examiner, † Cited by third party
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WO2013147009A1 (fr) * 2012-03-29 2013-10-03 宇部興産株式会社 Procédé de fabrication d'un film de polyimide et film de polyimide
WO2014003451A1 (fr) 2012-06-29 2014-01-03 Kolon Industries, Inc. Polyimide et film de polyimide le comprenant
TWI460211B (zh) * 2012-04-20 2014-11-11 Taimide Technology Inc 芳香族聚醯亞胺膜、其製備方法、及其應用
US9276139B2 (en) 2011-03-25 2016-03-01 Ube Industries, Ltd. Polyimide film production method, polyimide film production apparatus, and polyimide film
JP2016060128A (ja) * 2014-09-18 2016-04-25 三菱樹脂株式会社 転写フィルム及びそれを用いた樹脂／ガラス積層体の製造方法、並びに樹脂／ガラス積層体
JP2017504195A (ja) * 2013-12-31 2017-02-02 北京北方▲微▼▲電▼子基地▲設▼▲備▼工▲芸▼研究中心有限▲責▼任公司Ｂｅｉｊｉｎｇ Ｎｍｃ Ｃｏ．，Ｌｔｄ． 静電チャック、チャンバ及び静電チャックの製造方法
JP2018059070A (ja) * 2016-09-30 2018-04-12 住友化学株式会社 光学フィルム及びその製造方法
EP3187331A4 (fr) * 2014-08-25 2018-04-25 Toyobo Co., Ltd. Film polymère revêtu par une couche d'agent de couplage au silane
JP2018203906A (ja) * 2017-06-06 2018-12-27 旭化成株式会社 ポリイミドフィルム、ポリイミドフィルムを用いた製品、及び、積層体
WO2019135367A1 (fr) * 2018-01-05 2019-07-11 東洋紡株式会社 Raidisseur
US20210122143A1 (en) * 2017-05-29 2021-04-29 Toyobo Co., Ltd. Laminate of polyimide film and inorganic substrate
WO2021124865A1 (fr) * 2019-12-17 2021-06-24 東洋紡株式会社 Corps stratifié
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WO2023037774A1 (fr) * 2021-09-08 2023-03-16 国立大学法人 筑波大学 Appareil à semi-conducteur et son procédé de fabrication
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08150687A (ja) * 1994-11-28 1996-06-11 Ind Technol Res Inst 除去されやすいポリイミド樹脂膜の製造方法
JPH08259714A (ja) * 1995-03-15 1996-10-08 W R Grace & Co 表面に微細な凹みを有する樹脂成形体の製造方法
JP2004051972A (ja) * 2002-05-30 2004-02-19 Sekisui Chem Co Ltd 樹脂シート
WO2006093272A1 (fr) * 2005-03-04 2006-09-08 Murata Manufacturing Co., Ltd. Substrat de connexion, procédé de fabrication idoine et procédé de traitement de surface de corps de résine

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3321901B2 (ja) * 1993-04-27 2002-09-09 宇部興産株式会社 粗面化ポリイミドフィルムの製造法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08150687A (ja) * 1994-11-28 1996-06-11 Ind Technol Res Inst 除去されやすいポリイミド樹脂膜の製造方法
JPH08259714A (ja) * 1995-03-15 1996-10-08 W R Grace & Co 表面に微細な凹みを有する樹脂成形体の製造方法
JP2004051972A (ja) * 2002-05-30 2004-02-19 Sekisui Chem Co Ltd 樹脂シート
WO2006093272A1 (fr) * 2005-03-04 2006-09-08 Murata Manufacturing Co., Ltd. Substrat de connexion, procédé de fabrication idoine et procédé de traitement de surface de corps de résine

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JPWO2013147009A1 (ja) * 2012-03-29 2015-12-14 宇部興産株式会社 ポリイミドフィルムの製造方法およびポリイミドフィルム
WO2013147009A1 (fr) * 2012-03-29 2013-10-03 宇部興産株式会社 Procédé de fabrication d'un film de polyimide et film de polyimide
TWI460211B (zh) * 2012-04-20 2014-11-11 Taimide Technology Inc 芳香族聚醯亞胺膜、其製備方法、及其應用
US9982103B2 (en) 2012-06-29 2018-05-29 Kolon Industries, Inc. Polyimide and polyimide film comprising the same
WO2014003451A1 (fr) 2012-06-29 2014-01-03 Kolon Industries, Inc. Polyimide et film de polyimide le comprenant
JP2015521687A (ja) * 2012-06-29 2015-07-30 コーロン インダストリーズ インク ポリイミドおよびこれを含むポリイミドフィルム
EP2867276A4 (fr) * 2012-06-29 2016-03-02 Kolon Inc Polyimide et film de polyimide le comprenant
JP2017504195A (ja) * 2013-12-31 2017-02-02 北京北方▲微▼▲電▼子基地▲設▼▲備▼工▲芸▼研究中心有限▲責▼任公司Ｂｅｉｊｉｎｇ Ｎｍｃ Ｃｏ．，Ｌｔｄ． 静電チャック、チャンバ及び静電チャックの製造方法
EP3187331A4 (fr) * 2014-08-25 2018-04-25 Toyobo Co., Ltd. Film polymère revêtu par une couche d'agent de couplage au silane
JP2016060128A (ja) * 2014-09-18 2016-04-25 三菱樹脂株式会社 転写フィルム及びそれを用いた樹脂／ガラス積層体の製造方法、並びに樹脂／ガラス積層体
JP2018059070A (ja) * 2016-09-30 2018-04-12 住友化学株式会社 光学フィルム及びその製造方法
JP7021887B2 (ja) 2016-09-30 2022-02-17 住友化学株式会社 光学フィルムの製造方法
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JP7192799B2 (ja) 2018-01-05 2022-12-20 東洋紡株式会社 スティフナー
JPWO2019135367A1 (ja) * 2018-01-05 2021-01-07 東洋紡株式会社 スティフナー
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