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WO2011122139A1 - Dispositif d'interférence à faisceau d'électrons - Google Patents

Dispositif d'interférence à faisceau d'électrons Download PDF

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Publication number
WO2011122139A1
WO2011122139A1 PCT/JP2011/053162 JP2011053162W WO2011122139A1 WO 2011122139 A1 WO2011122139 A1 WO 2011122139A1 JP 2011053162 W JP2011053162 W JP 2011053162W WO 2011122139 A1 WO2011122139 A1 WO 2011122139A1
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WIPO (PCT)
Prior art keywords
electron beam
electron
biprism
lens
sample
Prior art date
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Ceased
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PCT/JP2011/053162
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English (en)
Japanese (ja)
Inventor
研 原田
哲也 明石
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2012508134A priority Critical patent/JP5512797B2/ja
Publication of WO2011122139A1 publication Critical patent/WO2011122139A1/fr
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/10—Lenses
    • H01J37/12—Lenses electrostatic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/151—Electrostatic means
    • H01J2237/1514—Prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/2614—Holography or phase contrast, phase related imaging in general, e.g. phase plates

Definitions

  • the present invention relates to an electron beam interference device equipped with an electron beam biprism.
  • the present application is an electron beam interferometer equipped with an electron beam biprism, and is made to make the relative position between the electron beam biprism and the electromagnetic lens in the electron optical system suitable.
  • the electron beam interference microscope equipped with two stages the effect is great.
  • An electromagnetic lens, an electron beam biprism, and a two-stage electron beam biprism interferometer will be described in this order.
  • Electromagnetic lens> For an electron beam, both an electric field and a magnetic field are used as an electron lens or a deflector, but in general, a magnetic field type is used as a lens and an electric field type is used as a deflector.
  • a magnetic lens will be described as an electron lens.
  • FIG. 1A shows elements such as a magnetic lens and an electromagnetic coil attached to the lens. Since the magnetic lens requires a magnetic field parallel to the traveling direction of the electron beam, an electromagnetic coil 515 around the optical axis 2 of the electron optical system and a magnetic circuit for confining the magnetic field within a predetermined range. (Yoke 516) and a magnetic pole pair (pole piece 511) for concentrating the magnetic field on the optical path of the electron beam.
  • the electromagnetic coil 515 is configured to allow a large current to flow, and incorporates a cooling device 517 (usually water-cooled) for removing Joule heat generated by energization.
  • the yoke 516 is made of a high magnetic permeability material such as pure iron or permalloy, and has a shape surrounding the electromagnetic coil 515.
  • the pole piece 511 is a mechanism used to apply the magnetic field introduced by the yoke 516 by locally concentrating a strong magnetic field at a predetermined position on the optical path of the electron beam, and a space between the pair of magnetic poles. A strong magnetic field is applied.
  • the magnetic field applied by the pole piece 511 acts as an electron lens.
  • the pole piece holds the upper magnetic pole 512 made of a high magnetic permeability material, the lower magnetic pole 513 made of the same high magnetic permeability material, and the upper and lower magnetic pole pairs in a spatially separated state.
  • the focal length f of the magnetic type electromagnetic lens is such that the distance between the magnetic poles of the pole piece 511 is dg, the hole diameter of the pole piece 511 is dp, and excitation is performed with an ampere turn NI (N: number of coil turns, I: current).
  • the electron beam is represented by the formula (1) shown in FIG. That is, the focal distance f is shortened by increasing the local magnetic field by decreasing the distance dg between the magnetic poles of the pole piece or decreasing the hole diameter dp, or by increasing the number of turns N of the coil and the amount I of energization current. it can.
  • the focal length f in the current transmission electron microscope of 100 kV to 300 kV is 1 to 2 mm for the objective lens, 10 to 20 mm for the lens of the imaging lens system used for the enlarged imaging under the objective lens, and to the sample.
  • a lens of an irradiation optical system for adjusting the electron beam to be irradiated it is generally used at a length of about 20 mm to 50 mm.
  • the pole piece 511 of the magnetic lens has a shape as shown in FIG. 1A, the main surface of the lens is located between the magnetic poles of the pole piece 511. Therefore, only the pole piece is often called an electron lens.
  • the electromagnetic coil flange the three elements of the magnetic piece type electromagnetic lens of the pole piece 511, the electromagnetic coil 515, and the yoke 516 are collectively referred to as an electronic lens, and a schematic diagram of an optical system as shown in FIG. It is illustrated as a single optical lens (for example, the objective lens 5).
  • FIG. 1B shows an optical system in which the magnetic field type electromagnetic lens is used as an objective lens 5 to form an image of the sample 3.
  • An image 14 of the light source created by the irradiation system optical system 4 is formed above the sample 3, and the sample 3 is irradiated with an electron beam using the image 14 of the light source as a new light source.
  • the amount of electron beam irradiation depends on the amount of current generated by the electron gun 1.
  • the irradiation range and irradiation angle of the electron beam on the sample can be controlled by the position on the optical axis 2 of the image 14 of the light source.
  • the irradiation optical system 4 controls the irradiation conditions of the electron beam on the sample 3.
  • the light source 14 is located above the sample 3 and above the focal length of the objective lens 5 by a sufficient distance, so that the enlarged image formation on the image plane 7 of the sample 3 by the objective lens 5 is performed by the objective lens 5. This is accompanied by reduced image formation (light source image 11) on the image plane 711 of the light source 14 (near the rear focal position of the objective lens 5).
  • magnification in the vertical direction (optical axis direction) in imaging is the square of the lateral magnification (perpendicular to the optical axis: normal meaning magnification)
  • the position of the light source 14 that irradiates the sample 3 on the optical axis 2 Even if the irradiation condition changes, that is, even if the irradiation condition (the electron dose per unit area on the sample or the irradiation angle of the electron beam) changes, the position 711 of the image 11 of the light source by the objective lens 5 hardly changes.
  • a light source image 11 of an electron beam transmitted through the sample 3 is accompanied by an electron diffraction image of the sample 3.
  • the image formation position of the electron diffraction image (the image plane 711 of the light source 14 by the objective lens 5) does not depend on the irradiation condition of the electron beam to the sample 3, and therefore the electron diffraction image is observed. Adjustment of the optical system of the imaging lens system subsequent to the objective lens is easy.
  • the objective lens 5 is strongly excited in order to reduce spherical aberration at the time of image formation and is used under the condition of a short focal length. It is also effective for image observation and suppressing the enlargement of the apparatus by increasing the magnification per lens. Instead, since the sample 3 is positioned between the magnetic poles of the objective lens pole piece 511, the sample 3 is observed in a state immersed in a magnetic field, and the sample diaphragm 3 and an objective aperture 54 for eliminating scattered / diffracted electron beams from the sample are provided. A device for holding between the magnetic poles of the pole piece 511 is required.
  • the electron beam rotates about the direction of the lens magnetic field.
  • this appears as a rotation of the azimuth angle of the image about the optical axis, but it does not essentially affect the contents of the present application, so this case will be explained with a figure. Omitted.
  • an electro-optically identical deflection surface a plane including the optical axis
  • An electron biprism is an electron optical device that works in the same way as Fresnel's biprism in optics, and uses an electrostatic force to deflect an electron beam.
  • An electric field biprism is a Lorentz force between a magnetic field and an electron beam. What is used is called a magnetic field type electron biprism. Of these, the field-type electron biprism is widely used. For convenience of explanation, the field-type electron biprism will be described in this application. However, the field-type electron biprism is not limited to the field-type electron biprism. .
  • the electric field type electron biprism has a shape shown in FIG.
  • the ultrafine wire electrode 9 is composed of the ultrafine wire electrode 9 in the center and the parallel plate type ground electrode 99 held so as to sandwich the electrode.
  • the electron beams passing near the ultrafine wire electrode 9 are deflected in a direction facing each other by sensing the potential of the ultrafine wire electrode 9. (See the electron beam trajectory 22).
  • the electric field acting on the electron beam decreases as the distance from the extra fine wire electrode 9 decreases, the applied spatial range is long.
  • the deflection angle ⁇ of the electron beam is applied to the extra fine wire electrode 9 regardless of the incident position. proportional to the voltage V F. That is, the deflection angle ⁇ by using the voltage V F and the deflection coefficient k F applied to the filament electrode 9, having a simple relation of the formula (2) shown in FIG.
  • the deflection angle ⁇ of the electron beam does not depend on the incident position is an important feature for an electron optical device.
  • the electron beam is regarded as a plane wave
  • the plane wave 25 remains a plane wave and only the propagation direction is deflected, It will be ejected.
  • This is called an electron biprism because it corresponds to the effect of a double prism in which two prisms are combined.
  • the electron biprism is an indispensable device for creating electron beam interference in an electron beam that does not have a beam splitter like a half mirror in optics.
  • the reason for this lies in the function of separating the wavefront 25 of one electron beam into two waves and deflecting them in directions facing each other, as is apparent from FIG.
  • the electron beam that has passed through the electron biprism and separated into two waves is superimposed behind the electron biprism to generate interference fringes 8.
  • Such an electron optical system is generically called an electron beam interference optical system.
  • electron biprism when “electron biprism” is described, it means the entire electron biprism as an electron beam deflecting device in a broad sense including an ultrathin wire electrode, and refers to a precise position in an electron optical system. In principle, it is described as “Electron biprism ultrafine wire electrode”.
  • the two-stage electron biprism interferometer was developed to solve the disadvantages of the first-stage electron biprism interferometer, in which the two parameters of the electron interference microscope image, the interference fringe spacing s and the interference area width W cannot be controlled independently. It is a thing.
  • a two-stage electron biprism interference optical system is shown in FIG. In FIG. 3, as described above, the rotation of the azimuth angle of the propagating electron beam by the lens magnetic field is omitted, and the both ultrafine electrodes (91, 93) of the electron biprism including the optical axis 2 are used as the same deflection surface electro-optically.
  • the plane perpendicular to is drawn as a paper surface. Therefore, in FIG. 3, only the electrode cross section is drawn by a small circle for the both ultrafine wire electrodes (91, 93).
  • the omission in this illustration is the same in the following drawings unless otherwise specified.
  • the first electron biprism 91 is disposed on the first image surface 71 of the lower sample of the objective lens 5, and the second electron biprism 93 is lower than the first image surface 71.
  • the image plane 712 of the light source 12 imaged by the first imaging lens 61 located at the first imaging lens 61 and the second image plane 72 of the sample below the first imaging lens 61 and the first It is arranged in a shaded area (represented by dark hatching in FIG. 3) of the ultrafine wire electrode 91 of the electron biprism.
  • interference fringe spacing s and interference area width W Two parameters (interference fringe spacing s and interference area width W) of the interference microscope image (8 and 32) with this configuration are back-projected onto the sample surface, and are shown as interference fringe spacing s obj and interference area width W obj . 13 is represented by formulas (3) and (4).
  • alpha U is the deflection angle of the electron beam by the first electron biprism 91
  • the alpha L is a deflection angle of the second electron biprism 93.
  • Characters in other formulas mainly relate to distances between elements such as objects, lenses, and images in the optical system and are shown in FIG. That, a U is the distance of the sample 3 (the object plane) distance between the main surface of the objective lens 5, b U to the first image plane 71 of the main surface and the sample 3 of the objective lens 5, a L is the sample No.
  • the distance between one image plane 71 (the object plane of the first imaging lens 61) and the main surface of the first imaging lens 61, b L is the first imaging lens 61 and the second image plane 72 of the sample 3.
  • a 2 is the distance between the image plane 711 of the light source directly below the objective lens and the main surface of the first imaging lens 61
  • b 2 is the main surface of the first imaging lens 61 and the first imaging lens.
  • the distance from the image plane 712 of the light source directly below, D U is the distance from the image plane 711 of the light source directly below the objective lens to the image plane 71 of the sample by the objective lens 5, and D L is the distance of the light source directly below the first imaging lens.
  • L L is the second electron beam Baipurizu Is a distance to the second image plane 72 of the filament electrode 93 and the specimen 3.
  • M L b L / a L of the imaging optical system
  • d U is filament electrode of the first electron biprism The diameter is 91.
  • the interference fringe spacing s obj is expressed as a function of the deflection angle ⁇ U
  • the interference region width W obj is expressed as a function of the deflection angles ⁇ L and ⁇ L.
  • FIG. 4 schematically shows an electron microscope system that constitutes a two-stage electron biprism interference optical system. That is, a first electron biprism 91 is disposed below the objective lens 5, and a second electron biprism 93 is disposed below the first imaging lens 61.
  • the interference microscopic images in which the interference fringe interval s and the interference region width W are determined by the first and second electron biprisms (91, 93) are the second, third, and fourth imaging lenses (62, 63, 64), the image is adjusted to a predetermined magnification and recorded on the observation recording surface 89 by an image observation / recording medium 79 (for example, a TV camera or a CCD camera). Thereafter, it is reproduced as an amplitude image, a phase image, etc. by the arithmetic processing unit 77 and displayed on the monitor 76, for example.
  • an image observation / recording medium 79 for example, a TV camera or a CCD camera
  • FIG. 5A shows the mechanical positional relationship between the electromagnetic lens and the electron biprism
  • FIG. 5B shows the corresponding optical system.
  • the imaging lens below the objective lens has a configuration in which a pole piece is disposed at the center of the electromagnetic coil, and the electron biprism is installed between the electromagnetic lens flanges. That is, as shown in FIG. 5A, the first electron biprism 91 is between the objective lens flange 550 and the first imaging lens flange 561, and the second electron biprism 93 is the first imaging lens flange. It is installed between 561 and the second imaging lens flange 562.
  • the second electron biprism 93 is positioned considerably below the lens main surface of the first imaging lens 61 for the first imaging lens 61, and thus has two stages.
  • the first imaging lens 61 In order to construct an electron biprism interference optical system, the first imaging lens 61 must be used under weak excitation conditions. Therefore, the second image plane position 72 by the first imaging lens 61 may be too close to the main surface of the second imaging lens 62 or behind the main surface of the second imaging lens. A great restriction is imposed on the excitation conditions of the second imaging lens and the subsequent imaging lens such as the third imaging lens 63.
  • the light source image 12 by the first imaging lens 61 is not sufficiently reduced and focused on the light source image 11 by the objective lens 5 (there may be enlargement).
  • the irradiation condition of the electron beam to the sample 3 is changed by the irradiation optical system 4 (the position of the light source image 14 above the sample is changed)
  • the position of the light source image 12 on the optical axis 2 is greatly changed. End up. That is, the parameter D L (see FIG. 3) in the equation (3) in FIG. 13 changes greatly, and as a result, the interference condition (interference fringe interval s and interference region width W) changes greatly. For this reason, in order to obtain an interference microscope image under the same interference condition, it is necessary to readjust the optical system every time the irradiation condition of the electron beam to the sample 3 is changed.
  • the present invention combines an electron beam light source, an irradiation optical system for irradiating the sample with the electron beam, and an image of the sample obtained by irradiating the sample with the electron beam.
  • An electron beam interference apparatus comprising: an objective lens for imaging; and at least a first electromagnetic lens and a second electromagnetic lens for enlarging or reducing an image of the sample imaged by the objective lens.
  • a first electron biprism arranged at a position corresponding to the image plane of the sample imaged by the lens, the electron beam traveling direction downstream of the first electron biprism, and the A second electron biprism disposed in a space behind the first electron biprism, wherein the first electromagnetic lens is upstream of the second electromagnetic lens in the traveling direction of the electron beam.
  • the first electron biprism is provided an electron beam interference device disposed within a magnetic lens.
  • interference fringe spacing s and interference area width W Without changing the interference conditions (interference fringe spacing s and interference area width W) due to the change in the irradiation conditions of the electron beam on the sample, it is necessary to modify the optical system in accordance with the change of the observation area and the observation magnification.
  • a highly versatile two-stage electron biprism interferometer can be realized.
  • FIG. 6A shows the configuration of the objective lens flange 550 of the electron beam interferometer equipped with the two-stage electron biprism in the present application, and the two imaging lens flanges (561, 562) on the lower side of the objective lens flange 550.
  • the sample 3 and the objective aperture 53 are arranged between the magnetic poles of the objective lens pole piece 511 depicted in the upper part.
  • the sample 3 and the objective aperture 54 are side-entry type and are depicted by a mechanism that is inserted from the side surface of the objective lens flange 550, but this is an example and is not limited to this type.
  • the electromagnetic coil 515 of the objective lens 5 has a three-stage configuration, and a cooling device 517 for cooling Joule heat due to an exciting current is arranged between the electromagnetic coils.
  • the number of stages of the electromagnetic coils 515, the shape of the yoke 516, and the position configuration of the cooling device 517 are not limited to this figure.
  • a first imaging lens flange 561 is disposed below the objective lens flange 550 (downstream in the direction of travel of the electron beam), and a second imaging lens flange is further provided below the first imaging lens flange 561. 562 is depicted.
  • the upper magnetic pole 612 of the pole piece 611 of the first imaging lens 61 is provided with means for installing the first electron beam biprism 91, and the second electron beam biprism 93 is the first electron beam biprism 93. In this configuration, it is arranged directly below the imaging lens pole piece 611.
  • the electromagnetic coil 615 of the first imaging lens 61 is not integrated, but has an electron beam biprism holder (92, 94) or a structure in which the electromagnetic coil 615 is vertically divided with the attachment / detachment and drive mechanism interposed therebetween, so that the first connection is achieved.
  • the first electron biprism 91 is disposed on the upper magnetic pole 612 of the first imaging lens pole piece 611 located at the center of the image lens flange 561, and the second just below the first imaging lens pole piece 611.
  • the electron biprism 93 can be arranged.
  • Both the electron beam biprism holders (92, 94) are also of a side entry type, similar to the sample holder 35 and the objective aperture holder 54, and are introduced from the side surface of the first imaging lens flange 561. For this purpose, measures such as making a hole in the yoke 616 are taken.
  • the electromagnetic coil 615 of the first imaging lens 61 has the same three-stage configuration as the electromagnetic coil 515 of the objective lens 5, which is used under the same strong excitation conditions as the objective lens 5. In order to make the electromagnetic lens short focus, not only the method of increasing the number of turns N and increasing the ampere turn NI of the electromagnetic coil as shown in FIG.
  • the shape of the yoke 616 and the configuration of the electromagnetic coil cooling device 617 are not limited to the configuration of FIG. 6A.
  • the configuration of a conventional electromagnetic coil 625, yoke 626, and pole piece 621 is shown as an example.
  • FIG. 6B shows an example of a two-stage electron biprism interference optical system constructed with the configuration of the electron lens depicted in FIG. 6A.
  • An image 31 of the sample is formed on the position 71 of the ultrafine wire electrode 91 of the first electron biprism by the objective lens 5, and the image 31 is further formed by the first imaging lens 61 and the second imaging lens 62. (The second image plane 72).
  • the ultrafine wire electrode 93 of the second electron biprism is arranged in the area behind the ultrafine wire electrode 91 of the first electron biprism.
  • the ultrathin wire electrode 91 of the first electron biprism is positioned on the upper side in the vicinity of the main surface of the first imaging lens 61 (for example, in the vicinity of the upper magnetic pole 612 of the pole piece 611 (FIG. 6A)). Therefore, the first imaging lens 61 can be used as a sufficiently short focal length expanding optical system.
  • the second electron biprism 93 is near the lower side of the main surface of the first imaging lens 61 (for example, the first imaging lens 61 directly below the pole piece 611 of the first imaging lens 61 is a light source). Therefore, the ultrafine electrode 93 of the second electron biprism can be easily placed in the area behind the ultrafine electrode 91 of the first electron biprism. It becomes possible to arrange.
  • the optical system of the first embodiment includes the first imaging lens 61 as is clear when compared with the optical system of the conventional two-stage electron biprism interference system described in FIG. 5B.
  • the enlargement ratio of the passed sample image 72 is improved, and the reduction ratio of the light source image 12 is also improved. That is, even if the irradiation condition of the electron beam to the sample 3 is changed by the irradiation optical system 4, the position on the optical axis 2 of the image 12 of the light source by the first imaging lens 61 hardly changes (in FIG. 13).
  • the values of D L and L L in Equation (3) and Equation (4) do not change), and as a result, the interference condition (s and W) does not change. That is, the interference condition does not change with the change of the irradiation condition, and the same interference microscope image can be obtained.
  • the first electron biprism 91 is replaced with the first imaging lens pole piece 611 in the space including the upper (first) magnetic pole 612 and the lower (second) 613 magnetic pole.
  • the second electron biprism 93 is disposed directly below the first imaging lens pole piece 611 and the objective lens flange is configured in two stages (551, 552).
  • the structure of the Example of this is shown typically.
  • the first objective lens flange 551 has a strong excitation type structure similar to the conventional one, and an example is shown in which the objective aperture holder 54 as well as the sample holder 35 is a side entry type.
  • the second objective lens flange 552 has the same configuration as a conventional imaging lens. These configurations are examples, and the present invention is not limited to this example. Between the first objective lens flange 551 and the second objective lens flange 552, an electron biprism 45 and an aperture holder 44 (mainly assumed to be used as a limited field stop) are arranged. . An electron biprism is also provided between the second objective lens flange 552 and the first imaging lens flange 561 and between the first imaging lens flange 561 and the second imaging lens flange 562, respectively. 45 and the aperture holder 44 are arranged so that a two-stage electron biprism interference optical system (see FIG.
  • FIG. 8 shows a third embodiment of the present application.
  • an objective lens flange 550 drawn at the top and a second imaging lens flange 562 drawn at the bottom have the same configuration as in the first embodiment.
  • the upper magnetic pole 612 of the pole piece 611 of the first imaging lens 61 is provided with means for installing the first electron biprism 91 with the same configuration as in the first embodiment. is there.
  • means for installing the second electron biprism 93 is provided on the lower magnetic pole 613 of the first imaging lens pole piece 611.
  • the second electron biprism 93 is excited more strongly in the vicinity of the image 12 of the light source by the first imaging lens 61, particularly the first imaging lens 61, than the optical system of the first embodiment. It becomes possible to arrange the light source in the vicinity of the image 12 of the light source under the condition, and a large interference region width W can be obtained even when the deflection angle ⁇ L to the electron beam by the second electron biprism 93 is small. It becomes possible.
  • the requirements for the withstand voltage performance of the ultrafine wire electrode are relaxed.
  • the upper and lower magnetic poles (612, 613) of the first imaging lens pole piece 611 are used. Similar to the first embodiment, the structure and mechanism are considered, and the electromagnetic coil 615 is divided and distributed, the holes are installed in the yoke 616, and the electron beam biprism is attached and removed and the drive mechanism is installed. is there.
  • pole pieces (511, 611, 621) and electromagnetic coils (515, 615) of the objective lens flange 550, the first imaging lens flange 561, and the second imaging lens flange 562 depicted in FIG. 625), yokes (516, 616, 626), and electromagnetic coil cooling devices (517, 617, 627) are merely examples, and the configuration is not limited to the illustrated configuration, and is similar to the first embodiment. It is.
  • the objective lens system is composed of a plurality of electromagnetic lenses, a plurality of separate electron biprisms 45 and a plurality of aperture holders 44 are installed between the electromagnetic lens flanges, and the like.
  • the configuration for improving the versatility of the above can be implemented.
  • the distance between the first imaging lens 61 and the second electron biprism 93 is that of the first embodiment (FIG. Although different from 6B), the features of the optical system are the same, and the illustration is omitted.
  • FIG. 9 shows a fourth embodiment of the present application.
  • the objective lens flange 550 drawn at the top and the second imaging lens flange 562 drawn at the bottom have the same configuration as the first and third embodiments.
  • the means for installing the first electron biprism 91 is provided on the upper magnetic pole 612 of the pole piece 611 of the first imaging lens 61 as in the first and third embodiments. It is a configuration.
  • means for installing the second electron biprism 93 is provided between the magnetic poles of the first imaging lens pole piece 611.
  • the installation position of the second electron biprism 93 corresponds to the installation position of the objective aperture 54 in the objective lens pole piece 511.
  • the second electron biprism 93 is made to coincide with the image plane 712 of the light source by the first imaging lens 61 when strongly excited, or very close to the image plane 712 of the light source by the first imaging lens. It is the structure which becomes possible to arrange
  • position. This is a configuration that can easily realize the condition of D L ⁇ L L 0 with respect to the position of the second electron biprism 93 in the above-described two-stage electron biprism interference optical system. (Interference fringe interval s and interference area width W) can be controlled completely independently.
  • the upper and lower magnetic poles (612, 613) of the first imaging lens pole piece 611 are used.
  • Example 1 implementation of considerations such as structural and mechanical considerations, division and distribution of electromagnetic coils 615, installation of holes in the yoke 616 and installation / removal of the electron biprism / drive mechanism, etc. Similar to Example 3.
  • pole pieces (511, 611, 621) and electromagnetic coils (515, 615) of the objective lens flange 550, the first imaging lens flange 561, and the second imaging lens flange 562 depicted in FIG. 625), yokes (516, 616, 626), and electromagnetic coil cooling devices (517, 617, 627) are merely examples, and the first embodiment is not limited to the illustrated configurations. Similar to Example 3.
  • the objective lens system is composed of a plurality of electromagnetic lenses, a plurality of separate electron biprisms 45 and a plurality of aperture holders 44 are installed between the electromagnetic lens flanges, and the like.
  • the configuration for improving the versatility of the above can be implemented.
  • the distance between the first imaging lens 61 and the second electron biprism 93 is the same as that of the first embodiment (FIG. 6B).
  • the characteristics of the optical system are the same, and the illustration is omitted.
  • FIG. 10 shows a fifth embodiment of the present application.
  • the objective lens flange 550 drawn at the top and the second imaging lens flange 562 drawn at the bottom have the same configurations as those of the first, third, and fourth embodiments.
  • the means for installing the second electron biprism 93 is provided immediately below the pole piece 611 of the first imaging lens 61, which is the same configuration as in the first embodiment.
  • the first electron biprism 91 is disposed between the magnetic poles of the first imaging lens pole piece 611 in the space including the upper (first) magnetic pole and the lower (second) magnetic pole. Means for installing are provided.
  • the installation position of the first electron biprism 91 corresponds to the position of the sample 3 in the objective lens pole piece 511. That is, the first imaging lens 61 can be used under the same strong excitation condition as that of the objective lens 5, and the focal length f is further shorter than that of the above embodiment, and can be about 1 mm to 2 mm. .
  • the position on the optical axis 2 of the image 12 of the light source on the lower side of the first imaging lens 61 further than in the above embodiment does not depend on the use conditions of the irradiation optical system 4, and the expression ( The values of D L and L L in 3) and Equation (4) do not change, and it is possible to observe an interference microscope image under the same interference conditions.
  • the upper and lower magnetic poles (612, 613) of the first imaging lens pole piece 611 are used. Considerations on structure and mechanism, division / distribution arrangement of electromagnetic coils 615, installation of holes in the yoke 616, attachment / detachment of electron beam biprism, installation of drive mechanism, etc. are made in the first embodiment and the like. It is the same as that of an Example. Further, the pole pieces (511, 611, 621) and electromagnetic coils (515, 615) of the objective lens flange 550, the first imaging lens flange 561, and the second imaging lens flange 562 depicted in FIG.
  • the objective lens system is composed of a plurality of electromagnetic lenses, a plurality of separate electron biprisms 45 and a plurality of aperture holders 44 are installed between the electromagnetic lens flanges, and the like.
  • the configuration for improving the versatility of the above can be implemented.
  • the distance between the first electron biprism 91 and the first imaging lens 61 is the same as that of the first embodiment (FIG. 6B).
  • the characteristics of the optical system are the same, and the illustration is omitted.
  • FIG. 11 shows a sixth embodiment of the present application.
  • the objective lens flange 550 drawn at the top and the second imaging lens flange 562 drawn at the bottom have the same configuration as the first, third, fourth, and fifth embodiments. .
  • the means for installing the first electron biprism 91 between the magnetic poles of the pole piece 611 of the first imaging lens 61 is the same as the fifth embodiment and the first connection.
  • the means for installing the second electron biprism 93 on the lower magnetic pole 613 of the image lens pole piece 611 is the same as that of the third embodiment.
  • the installation position of the first electron biprism 91 corresponds to the position of the sample 3 in the objective lens pole piece 511, and the first imaging lens 61 is under the strong excitation condition as much as the objective lens, that is, It can be used with a short focal length of about 1 mm to 2 mm.
  • the position on the optical axis 2 of the image 12 of the light source below the first imaging lens 61 on the optical axis 2 becomes a use condition of the irradiation optical system 4 more than in the first, third, and fourth embodiments.
  • the values of D L and L L in the equations (3) and (4) in FIG. 13 do not change, and the interference microscope image observation under the same interference conditions becomes possible.
  • the second electron biprism 93 has a stronger excitation condition in the vicinity of the image 12 of the light source by the first imaging lens 61, in particular, the first imaging lens 61 than the optical system of the fifth embodiment.
  • the deflection angle ⁇ L to the electron beam by the second electron biprism 93 is small, a large interference area width W can be obtained. It becomes. That is, in the case of an electric field type electron biprism, the requirements for the withstand voltage performance of the ultrafine wire electrode are relaxed.
  • the upper and lower magnetic poles (612, 613) of the first imaging lens pole piece 611 are used. Considerations on structure and mechanism, division / distribution arrangement of electromagnetic coils 615, installation of holes in the yoke 616, attachment / detachment of electron beam biprism, installation of drive mechanism, etc. are made in the first embodiment and the like. It is the same as that of an Example. Further, the pole pieces (511, 611, 621) and electromagnetic coils (515, 615) of the objective lens flange 550, the first imaging lens flange 561, and the second imaging lens flange 562 depicted in FIG.
  • the objective lens system is composed of a plurality of electromagnetic lenses, a plurality of separate electron biprisms 45 and a plurality of aperture holders 44 are installed between the electromagnetic lens flanges, and the like.
  • the configuration for improving the versatility of the above can be implemented.
  • the optical system of the two-stage electron biprism interferometer constructed by the configuration of the sixth embodiment includes the distance between the first electron biprism 91 and the first imaging lens 61, and the first connection. Although the distance between the image lens 61 and the second electron biprism 93 is different from that of the first embodiment (FIG. 6B), the optical system has the same characteristics and is not shown.
  • FIG. 12 shows a seventh embodiment of the present application.
  • the objective lens flange 550 drawn at the top and the second imaging lens flange 562 drawn at the bottom are the same as those in the first, third, fourth, fifth, and sixth embodiments. It is a configuration.
  • the means for installing the first electron biprism 91 is provided between the magnetic poles of the pole piece 611 of the first imaging lens 61 in the fifth and sixth embodiments
  • the means for installing the second electron biprism 93 is also provided between the magnetic poles of the first imaging lens pole piece 611 and has the same configuration as that of the fourth embodiment.
  • the installation position of the first electron biprism 91 corresponds to the position of the sample 3 in the objective lens pole piece 511, and the first imaging lens 61 is under the same strong excitation condition as the objective lens 5. That is, it can be used with a short focal length of about 1 mm to 2 mm.
  • the position on the optical axis 2 of the image 12 of the light source below the first imaging lens 61 on the optical axis 2 further depends on the use conditions of the irradiation optical system than in the first, third, and fourth embodiments. Accordingly, the values of DL and L L in the equations (3) and (4) in FIG. 13 do not change, and the interference microscope image observation under the same interference conditions becomes possible.
  • the installation position of the second electron biprism 93 corresponds to the installation position of the objective aperture 54 in the objective lens pole piece 511. That is, the second electron biprism 93 is made to coincide with the image surface 712 of the light source by the first imaging lens 61 when the strong excitation condition is used, or is arranged at a position very close to the image surface 712 of the light source.
  • This is a configuration that can easily realize the condition of D L ⁇ L L 0 with respect to the position of the electron biprism in the above-described two-stage electron biprism interference optical system.
  • the interferometer can control the fringe spacing s and the interference area width W) completely independently.
  • the upper and lower magnetic poles (612, 613) of the first imaging lens pole piece 611 are used. Considerations on structure and mechanism, division / distribution arrangement of electromagnetic coils 615, installation of holes in the yoke 616, attachment / detachment of electron beam biprism, installation of drive mechanism, etc. are made in the first embodiment and the like. It is the same as that of an Example. Further, the pole pieces (511, 611, 621) and electromagnetic coils (515, 615) of the objective lens flange 550, the first imaging lens flange 561, and the second imaging lens flange 562 depicted in FIG.
  • the objective lens system is composed of a plurality of electromagnetic lenses, a plurality of separate electron biprisms 45 and a plurality of aperture holders 44 are installed between the electromagnetic lens flanges, and the like.
  • the configuration for improving the versatility of the above can be implemented.
  • the optical system of the two-stage electron biprism interferometer constructed by the configuration of the seventh embodiment includes the distance between the first electron biprism 91 and the first imaging lens 61, and the first connection. Although the distance between the image lens 61 and the second electron biprism 93 is different from that of the first embodiment (FIG. 6B), the optical system has the same characteristics and is not shown.
  • the configuration of an electromagnetic lens in which an electron biprism is disposed in order to realize an interference optical system suitable as a two-stage electron biprism interferometer, the configuration of an electromagnetic lens in which an electron biprism is disposed, The configuration of the relative position of the electron biprism and the electromagnetic lens in the interference optical system, (1) using the first imaging lens below the first electron biprism under strong excitation conditions; (2) installing the first and second electron biprisms near the main surface of the first imaging lens and above and below the main surface; (3) In order to realize (2), providing means for installing an electron biprism on the pole piece of the first imaging lens; (4) In addition to (3), devise structural and mechanical measures such as dividing the electromagnetic coil of the first imaging lens, or separating the spatial position of the electromagnetic coil and the pole piece, Thus, it is possible to suppress the change in the interference condition that occurs with the change in the irradiation condition of the electron beam to the sample.
  • the configuration of the first imaging lens flange 561 in which the two-stage electron biprisms (91, 93) are arranged the configuration in which the electromagnetic coil 615 is distributed vertically. Although these are illustrated (FIGS. 6 to 12), these are merely examples, and the electron biprisms (91, 93) can be arranged in the vicinity of the pole piece 611 of the first imaging lens 61.
  • the present application can be implemented.
  • the configuration of the objective lens flange 550 can be used as the first imaging lens flange 561.
  • the electron beam light source an irradiation optical system for irradiating the sample with the electron beam, and irradiating the sample with the electron beam are obtained.
  • An objective lens that forms an image of the sample, and at least a first electromagnetic lens and a second electromagnetic lens for enlarging or reducing the image of the sample imaged by the objective lens.
  • a first electron biprism arranged at a position corresponding to the image plane of the sample imaged by the objective lens, and a downstream side of the first electron biprism in the traveling direction of the electron beam, And a second electron biprism disposed in a space behind the first electron biprism, wherein the first electromagnetic lens travels the electron beam more than the second electromagnetic lens. Placed upstream in the direction It is intended to include electron beam interference device, wherein the first electron biprism is disposed within the first magnetic lens.
  • the first electromagnetic lens upstream in the traveling direction of the electron beam belonging to the imaging lens system includes an electromagnetic coil for generating a magnetic field, a first magnetic pole located upstream in the traveling direction of the electron beam, A pole piece having a second magnetic pole located downstream of the first magnetic pole, a member for connecting and fixing the first magnetic pole and the second magnetic pole, and detachable from the magnetic path;
  • a first electron biprism is disposed in a space including the first magnetic pole and the second magnetic pole, and is located downstream of the first electron biprism in the traveling direction of the electron beam and the first electron beam biprism. It includes an electron beam interference device in which a second electron beam biprism is disposed in the space behind the prism.
  • SYMBOLS 1 Electron source or electron gun, 11 ... Image of electron source under objective lens, 12 ... Image of electron source under 1st imaging lens, 14 ... Image of electron source under irradiation optical system, 18 DESCRIPTION OF SYMBOLS ... Vacuum unit, 19 ... Control unit of electron source, 2 ... Optical axis, 21 ... Object wave, 22 ... Orbit of electron beam, 23 ... Reference wave, 25 ... Wave front of electron wave, 3 ... Sample, 31 ... By objective lens An image of the imaged sample, 32... An image of the sample imaged by the first imaging lens, 35... Sample holder, 39... Sample control unit, 4. First irradiation lens 42...
  • Second irradiation lens 44 Diaphragm holder 45. Electron beam biprism holder 47. Second irradiation lens control unit 48. First irradiation lens control unit 49. Control unit, 5 ... objective lens, 53 ... objective aperture holder, 51 ... objective lens pole piece, 512 ... upper magnetic pole of objective lens pole piece, 513 ... lower magnetic pole of objective lens pole piece, 514 ... magnetic pole connection fixing part of objective lens pole piece, 515 ... electromagnetic coil of objective lens, 516 ... objective Lens magnetic path (yoke), 517 ... cooling device for objective lens electromagnetic coil, 521 ... first objective lens pole piece, 522 ... second objective lens pole piece, 54 ... objective aperture or objective aperture holder, 550 ...
  • objective Lens flange 551 ... first objective lens flange, 552 ... second objective lens flange, 561 ... first imaging lens flange, 562 ... second imaging lens flange, 56 ... control system computer, 57 ... control Computer monitor, 58 ... control system computer interface, 59 ... objective lens Control unit 61... First imaging lens 611. First imaging lens pole piece 612. Upper magnetic pole of first imaging lens pole piece 613. Lower magnetic pole of first imaging lens pole piece 614. Magnetic pole connection fixing portion of first imaging lens pole piece, 615... Electromagnetic coil of first imaging lens, 616. Magnetic path (yoke) of first imaging lens, 617. Cooling device for first imaging lens electromagnetic coil , 62 ... Second imaging lens, 621 ...
  • Second imaging lens pole piece 625 ... Electromagnetic coil of the second imaging lens, 626 ... Magnetic path (yoke) of the second imaging lens, 627 ... Second imaging Lens electromagnetic coil cooling device 63 ... third imaging lens 64 ... fourth imaging lens 66 ... fourth imaging lens control unit 67 ... third imaging lens control unit 68 ... second connection Image lens control unit, 69: Control unit of the first imaging lens, 7: Image surface of the sample, 71: Image surface of the sample by the objective lens, 711: Image surface of the electron source by the objective lens, 72: Sample image by the first imaging lens Image plane 712 ... Image plane of electron source by first imaging lens, 714 ... Image plane of electron source by irradiation optical system, 76 ... Image display device, 77 ...
  • Image recording / arithmetic processing device 78 ... Image observation / Control unit for recording medium, 79 ... image observation / recording medium, 8 ... interference fringe, 88 ... interference microscopic image, 89 ... observation / recording surface, 9 ... filament electrode of electron biprism, 91 ... first electron beam by Prism, 92... First electron biprism holder, 93. Second electron biprism, 94. Second electron biprism holder, 96. Second electron biprism control unit, 98. ... first electron beam bar The control unit of the prisms, 99 ... parallel plate ground electrodes

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

L'invention porte sur un système optique à interférence d'un microscope électronique à transmission, dans lequel des moyens pour disposer un premier biprisme de faisceau d'électrons (91) à l'intérieur d'une première lentille de réalisation d'image (61) dans un système de lentille de réalisation d'image sont disposés de telle sorte que le premier biprisme de faisceau d'électrons est disposé au voisinage du côté supérieur de la surface principale de la première lentille de réalisation d'image, et qu'un second biprisme de faisceau d'électrons (93) est disposé au voisinage du côté inférieur de la surface principale de la première lentille de réalisation d'image. Par conséquent, même si les conditions pour une irradiation d'un échantillon avec un faisceau d'électrons sont changées, les conditions d'interférence (l'intervalle (s) entre des bandes d'interférence et la largeur (W) d'une zone d'interférence) ne changent pas, et une image de microscope à interférence peut être obtenue.
PCT/JP2011/053162 2010-03-30 2011-02-15 Dispositif d'interférence à faisceau d'électrons Ceased WO2011122139A1 (fr)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10770264B2 (en) 2018-03-22 2020-09-08 Riken Interference optical system unit, charged particle beam interference apparatus, and method for observing charged particle beam interference image

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197165A (ja) * 2004-01-09 2005-07-21 Institute Of Physical & Chemical Research 干渉装置
WO2006090556A1 (fr) * 2005-02-23 2006-08-31 Riken Interferometre
JP2007115409A (ja) * 2004-03-31 2007-05-10 Institute Of Physical & Chemical Research 電子線干渉装置および電子顕微鏡
JP2009193834A (ja) * 2008-02-15 2009-08-27 Hitachi Ltd 電子線装置
WO2010026867A1 (fr) * 2008-09-02 2010-03-11 株式会社日立製作所 Dispositif à faisceau d'électrons

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005197165A (ja) * 2004-01-09 2005-07-21 Institute Of Physical & Chemical Research 干渉装置
JP2007115409A (ja) * 2004-03-31 2007-05-10 Institute Of Physical & Chemical Research 電子線干渉装置および電子顕微鏡
WO2006090556A1 (fr) * 2005-02-23 2006-08-31 Riken Interferometre
JP2009193834A (ja) * 2008-02-15 2009-08-27 Hitachi Ltd 電子線装置
WO2010026867A1 (fr) * 2008-09-02 2010-03-11 株式会社日立製作所 Dispositif à faisceau d'électrons

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10770264B2 (en) 2018-03-22 2020-09-08 Riken Interference optical system unit, charged particle beam interference apparatus, and method for observing charged particle beam interference image

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