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WO2011119895A3 - Method for forming phase change memory device - Google Patents

Method for forming phase change memory device Download PDF

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Publication number
WO2011119895A3
WO2011119895A3 PCT/US2011/029880 US2011029880W WO2011119895A3 WO 2011119895 A3 WO2011119895 A3 WO 2011119895A3 US 2011029880 W US2011029880 W US 2011029880W WO 2011119895 A3 WO2011119895 A3 WO 2011119895A3
Authority
WO
WIPO (PCT)
Prior art keywords
phase change
change material
pcm
change memory
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2011/029880
Other languages
French (fr)
Other versions
WO2011119895A2 (en
Inventor
Weimin Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Publication of WO2011119895A2 publication Critical patent/WO2011119895A2/en
Publication of WO2011119895A3 publication Critical patent/WO2011119895A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H10N70/8265—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices on sidewalls of dielectric structures, e.g. mesa-shaped or cup-shaped devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

Phase change memory (PCM) device structures are described, in which the phase change material is seamless, thereby obviating void issues that are associated with decreased device performance. Such PCM device structures can be readily formed by a trench technique in which phase change material is conformally deposited on trench side wall and bottom surfaces, followed by removal of the phase change material from the bottom surface, deposition of a dielectric passivation layer and thereafter oxide and/or nitride material, followed by CMP to remove dielectric and oxide/nitride material, and expose top surfaces of the phase change material. A top electrode then is formed in contact with the exposed top surfaces of the phase change material to provide a top electrode/PCM device structure including the seamless PCM material.
PCT/US2011/029880 2010-03-24 2011-03-24 Method for forming phase change memory device Ceased WO2011119895A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31688010P 2010-03-24 2010-03-24
US61/316,880 2010-03-24

Publications (2)

Publication Number Publication Date
WO2011119895A2 WO2011119895A2 (en) 2011-09-29
WO2011119895A3 true WO2011119895A3 (en) 2011-12-22

Family

ID=44673874

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/029880 Ceased WO2011119895A2 (en) 2010-03-24 2011-03-24 Method for forming phase change memory device

Country Status (1)

Country Link
WO (1) WO2011119895A2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6750079B2 (en) * 1999-03-25 2004-06-15 Ovonyx, Inc. Method for making programmable resistance memory element
US20080035961A1 (en) * 2006-08-14 2008-02-14 Industrial Technology Research Institute Phase-change memory and fabrication method thereof
US20080078984A1 (en) * 2006-09-29 2008-04-03 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US20080290335A1 (en) * 2007-05-21 2008-11-27 Industrial Technology Research Institute Phase change memory device and method for fabricating the same
US20090227066A1 (en) * 2008-03-06 2009-09-10 International Business Machines Corporation Method of forming ring electrode

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6750079B2 (en) * 1999-03-25 2004-06-15 Ovonyx, Inc. Method for making programmable resistance memory element
US20080035961A1 (en) * 2006-08-14 2008-02-14 Industrial Technology Research Institute Phase-change memory and fabrication method thereof
US20080078984A1 (en) * 2006-09-29 2008-04-03 Samsung Electronics Co., Ltd. Semiconductor device and method of fabricating the same
US20080290335A1 (en) * 2007-05-21 2008-11-27 Industrial Technology Research Institute Phase change memory device and method for fabricating the same
US20090227066A1 (en) * 2008-03-06 2009-09-10 International Business Machines Corporation Method of forming ring electrode

Also Published As

Publication number Publication date
WO2011119895A2 (en) 2011-09-29

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