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WO2011117056A1 - Composant semi-conducteur émettant un rayonnement et procédé de fabrication d'un composant semi-conducteur émettant un rayonnement - Google Patents

Composant semi-conducteur émettant un rayonnement et procédé de fabrication d'un composant semi-conducteur émettant un rayonnement Download PDF

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Publication number
WO2011117056A1
WO2011117056A1 PCT/EP2011/053327 EP2011053327W WO2011117056A1 WO 2011117056 A1 WO2011117056 A1 WO 2011117056A1 EP 2011053327 W EP2011053327 W EP 2011053327W WO 2011117056 A1 WO2011117056 A1 WO 2011117056A1
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Prior art keywords
semiconductor layer
semiconductor
growth
active zone
active
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German (de)
English (en)
Inventor
Werner Bergbauer
Martin Strassburg
Hans-Juergen Lugauer
Patrick Rode
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
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    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
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    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures

Definitions

  • Radiation-emitting semiconductor device indicated. They are conventional nitride-based light-emitting
  • LEDs Diodes
  • an active zone for example, a multiple quantum well structure
  • an n-doped semiconductor layer, the active zone and, moreover, a p-doped semiconductor layer are grown on a substrate.
  • nitride-based semiconductor materials are commonly used in the cited
  • the growth order of the layers be reversed so that on a substrate first the p-doped layer, then the active zone and on this in turn the n-doped layer are grown.
  • this has some disadvantages, since the p-doped layer has only a small current widening.
  • advantageous polarity inversion prior to growth of the p-doped layer is usually grown an n-doped layer and a tunnel junction to be applied subsequently p-doped layer, whereby it can then be designed with a smaller thickness. tunnel junctions
  • MOVPE metal-organic vapor phase epitaxy
  • the thickness and the (energetic) height of the barrier layers between the quantum films are a hindrance to an even distribution.
  • An object of at least some embodiments is to specify a radiation-emitting semiconductor component with a nitride-based semiconductor layer sequence.
  • a further object of at least some embodiments is to provide a method for producing a
  • Growth direction is epitaxially grown and based on a group III nitride compound semiconductor material. "Based on a group III nitride compound semiconductor material” here means that essential
  • Material components of the semiconductor layer sequence is a group III material, for example one or more selected from AI, In, B and in particular Ga, and the group-V material are nitrogen.
  • the semiconductor layer sequence can have a plurality of layers that are in the respective
  • Material composition and / or doping can differ.
  • MOVPE metal-organic vapor phase epitaxy
  • MBE molecular beam epitaxy
  • Growth is perpendicular to the substrate surface. This may mean, in particular, that the semiconductor layer sequence has a main growth direction perpendicular to the substrate surface and additionally a lateral growth direction parallel to the substrate
  • Substrate surface may have a lower growth rate than in Hauptwachstungsraum. Further features and embodiments of the method for producing the radiation-emitting semiconductor component and in particular the semiconductor layer sequence are described below.
  • the semiconductor layer sequence has at least one n-doped semiconductor layer in the growth direction and an active zone above it, the active zone having at least one active layer which emits electromagnetic radiation during operation of the semiconductor component.
  • the active zone can be designed as a single quantum well structure.
  • the active zone can also be designed as a multiple quantum well structure with at least two active layers.
  • the group III nitride compound semiconductor material may be hexagonal
  • active zone which may include, for example, one or more InGaN quantum wells.
  • piezoelectric fields occur, for example, due to the polar wurtzite crystal structure, since group II atoms have one of the nitrogen atoms different and in particular lower electronegativity, which form along the corresponding crystal bonds dipoles. In the hexagonal wurtzite structure, this results in a polarization of the crystal along the
  • Crystallographic c-axis which also corresponds to the growth direction perpendicular to the surface of a growth substrate.
  • the polarity of the piezoelectric fields depends on the growth mode in which the semiconductor layer sequence
  • MOVPE organometallic vapor phase epitaxy
  • Group III polarity has grown.
  • the polarization in a group III nitride crystal having a group III polarity causes such a formation of
  • Semiconductor devices having such a group III polarity can be significantly reduced.
  • N-face polarity Nitrogen polarity or N polarity (N-face polarity) on. This means that compared to the conventional
  • the n-doped layer has a reverse sequence of the group I II atoms and the nitrogen atoms, whereby the polarization along the c-axis and along the
  • PILS polarization inverted layer structure
  • Charge carrier is lowered into the active zone, so that a lower operating voltage for carrier injection and a more homogeneous carrier concentration in the active layers of the active zone can be achieved, whereby the emission of electromagnetic radiation can be carried out with a high efficiency.
  • Electromagnetic radiation here and hereinafter means in particular light having a wavelength in the infrared to ultraviolet wavelength range and in particular in the visible wavelength range
  • Semiconductor component may thus preferably
  • the electromagnetic radiation can in the at least one active layer of the active zone by recombination of
  • Electrons and holes are generated.
  • an active zone formed as a multiple quantum well structure between at least two active layers, in particular between each two adjacent active layers one
  • the active zone can in particular at least one barrier layer with a
  • the active zone may have three or more than three active layers
  • the active zone may have five or less active layers.
  • a barrier layer may be arranged between each two adjacent active layers.
  • a layer thickness of the barrier layers of 15 nm or less, preferably 5 nm or less, more preferably 3 nm or less and preferably even 2 nm or less, an improvement in the overlap of the barrier layers
  • Wave functions and the electronic coupling between the individual active layers can be achieved. This can be advantageous in the radiation-emitting
  • Carrier distribution on the individual, arranged in the active zone active layers lead, so that a high efficiency is achieved.
  • At least one p-doped layer may be applied over the active zone, so that here
  • the above-described memory effect in the doping of a buried p-layer with magnesium can be avoided. Since the n-doped semiconductor layer, and thus also the layers grown over it, have N polarity, the radiation-emitting semiconductor component described here is nevertheless polarization-inverted
  • nanostab also: “nanorod” or “nanowire”
  • nanostab is here and below a rod or column-like semiconductor layer sequence structure referred to along the Hauptwachstumsraum a larger dimension than laterally thereto, ie perpendicular to
  • Main growth direction has.
  • the main growth direction is a direction away from the growth surface Direction, in particular a perpendicular thereto
  • the nanorod can have a diameter in the nanometer range to micrometer range, in particular greater than or equal to 10 nm, in particular greater than or equal to 100 nm, and less than or equal to 5 .mu.m, in particular less than or equal to 500 nm.
  • a height or length of the nanorod along the growth direction of the semiconductor layer sequence perpendicular to a growth substrate can be greater than or equal to 100 nm and for example be some 100 nm to a few micrometers, wherein the height or length is always greater than the diameter.
  • the nanorod can preferably have a uniform diameter over its entire length or, alternatively, at least one or more
  • the nanorod can, for example, have a round, hexagonal or polygonal outline.
  • the ratio between length and diameter and the shape of the cross section can be determined by the growth conditions of the semiconductor layer sequence
  • the proportion of lateral and vertical growth rate relative to a growth substrate surface may be adjustable via the proportion of hydrogen added to the reaction gas.
  • the semiconductor layer sequence As a nanorod, the group III nitride
  • a two-dimensional semiconductor layer sequence is designated as one which is lateral, ie along the
  • planar semiconductor layer sequences is the quality of a semiconductor layer with N polarity in terms of
  • nanostructured semiconductor layer sequence described here can be used in comparison to
  • Crystal lattice caused an increase in the Injection barrier for carriers may result in the active zone. Furthermore, the tension to the
  • the incorporation of indium into the active zone can lead to a local broadening of the nanorod cross section in the region of the active zone, whereby an elastic, at least partial stress relaxation can be achieved.
  • the crystal structure of the active zone can be improved, whereby barrier layers with a small thickness can be arranged between the active layers than with planar semiconductor layer sequences, in particular the above-mentioned thicknesses of the one or
  • Semiconductor layer sequence on a growth substrate can also be a possible bending of the semiconductor layer sequence and in particular of the active region, such as planar
  • electromagnetic radiation can be increased. According to at least one embodiment is at a
  • Semiconductor device provided a growth substrate. On the growth substrate at least one nucleation nuclei generated, on the basis of which and from
  • Semiconductor layer sequence is epitaxially grown, which is based on a group III nitride compound semiconductor material.
  • the semiconductor layer sequence is described as a nanostrip with nitrogen polarity with an n-doped semiconductor layer and above an active zone along a
  • the growth substrate may be, for example, a sapphire or SiC substrate or even a silicon substrate.
  • the nucleation seed has an area on the growth substrate that is smaller than or equal to the cross-sectional area of the growth medium
  • nucleation nuclei For the production of nucleation nuclei can on the
  • a mask layer formed with at least one opening and the nucleation nuclei in the opening be arranged or be.
  • Nucleation nuclei a nitrogen-containing surface may be formed on the growth substrate.
  • a nitrogen-containing layer can be applied to the substrate to produce the nucleation nuclei.
  • the nitrogen-containing layer can be produced in particular by growing a group III nitride
  • Compound semiconductor material such as GaN or AlN, produced with nitrogen polarity and grown with a layer thickness surface on the substrate, wherein the
  • the nitrogen-containing layer and in particular only a surface region of the nitrogen-containing layer as the nitrogen-containing layer and in particular only a surface region of the nitrogen-containing layer as
  • a mask layer containing, for example, silicon dioxide and / or silicon nitride can then be applied in situ, for example by means of a chemical vapor deposition (CVD) process or else during MOVPE growth
  • CVD chemical vapor deposition
  • an opening in the mask layer can be produced by means of a lithography method and / or by means of a laser so that the nitrogen-containing layer is exposed in a surface area of desired shape and size, for example by a wet-chemical method and thus can form the nucleation germ in the opening.
  • the nucleation nucleus can be prepared by means of a nano-imprint process known to those skilled in the art.
  • the mask layer described above can also be applied directly to the substrate surface and provided with at least one
  • Nitriding a nitrogen-containing surface region of the Auswachubstrubstrate be generated.
  • the substrate can be exposed to a nitrogen-containing atmosphere by supplying ammonia.
  • the nitriding of the substrate surface can also be carried out over a large area prior to the application of the mask layer with the at least one opening.
  • the growth conditions during the epitaxial growth of the semiconductor layer sequence can be adjusted, for example, via the amount of hydrogen supplied to the respective reaction gases such that a desired ratio of a growth rate perpendicular to the substrate surface to a lateral growth rate, ie a growth rate along the substrate surface, can be achieved.
  • the growth conditions can be adjusted so that a lateral growth of the
  • Semiconductor layer sequence is completely or at least almost completely suppressed.
  • the semiconductor layer sequence can then be in a growth direction perpendicular to the surface of the
  • Growth substrate are grown so that after the
  • the active zone is grown.
  • the growth conditions can be adjusted such that, as an alternative to or in addition to the layer surface perpendicular to the c-crystal axis, one or more layer surfaces tilted thereon form on the n-doped layer as the n-doped layer grows, the different crystal surfaces of the grown one
  • the at least one active layer of the active zone can then additionally also on the tilted layer surfaces or as appropriate
  • Semiconductor layer can be formed. This may allow the active zone to be at least two
  • the active zone is also arranged on the tilted layer surfaces and / or on the side surfaces of the n-doped semiconductor layer, this may mean that at least a part of the active zone at least partially along a main extension direction of
  • the at least one active layer of the active zone may each have at least two regions of different thicknesses. which can be on different layer surfaces. Due to the different thickness, the semiconductor layer sequence can radiate electromagnetic radiation of different wavelengths from the at least two regions during operation of the radiation-emitting semiconductor component, wherein the emitted wavelength can be, for example, proportional to the thickness of the active layer, but also to the In content, in the respective region. Furthermore, the radiation-emitting
  • the growth substrate a plurality of nucleation nuclei are generated in a desired geometric arrangement and distribution on the growth substrate, so that the plurality of semiconductor layer sequences can be grown as nanorods with just the same arrangement and distribution.
  • the nanorods may be in one or two lateral directions along the substrate surface
  • Nanorods a distance of a fraction of the radiated Wavelength up to a few wavelengths
  • Radiation-emitting semiconductor device without further surface modification such as a roughening or
  • Nanostab-shaped semiconductor layer sequences can be arranged a transparent and / or a reflective material.
  • the transparent and / or reflective material may be electrically conductive and thus at the same time an electrical
  • the material may comprise, for example, a transparent conducting oxide (TCO), for example indium tin oxide, and / or a metal
  • transparent and / or reflective material also be electrically insulating and, for example, spin-on glass and / or have a polymer or be it.
  • the transparent material can be applied between the nanorods, so that the nanorods can be mechanically stabilized on a substrate on the one hand, and coupled out into the other, on the other
  • electromagnetic radiation can take place. Furthermore, on a surface facing away from the growth substrate of the semiconductor layer sequences, for example on the p-doped semiconductor layers of
  • a reflective material and about a carrier substrate are applied.
  • the growth substrate can be at least partially removed. In this way, for example, with complete removal of the growth substrate, the crystal side of the
  • FIGS. 1A to 1C show schematic representations of a method for producing a radiation-emitting
  • Figures 2 and 3 are schematic representations of
  • Figures 4A to 4C are schematic representations of a method for producing a radiation-emitting Semiconductor device according to another
  • Figure 5 is a schematic representation of a
  • FIGS. 6A to 6F show schematic representations of a method for producing a radiation-emitting device
  • FIGS. 1A to 1C show a method for producing a radiation-emitting semiconductor component 100 according to one exemplary embodiment.
  • a growth substrate 1 is provided which is shown in FIG. 1A.
  • Embodiment of sapphire can be provided for example as a wafer.
  • the mask layer 2 has a thickness of approximately 100 nm in the exemplary embodiment shown.
  • the exposed surface 4 of the growth substrate 1 is nitrided, as indicated by the arrows 5. This is the
  • the surface 4 exposed to a nitrogen-containing atmosphere, which is generated by the supply and splitting of ammonia by a suitable elevated temperature.
  • the hydrogen released by the ammonia decomposition causes etching back of the surface 4 of the growth substrate 1 in the opening 3, which is then passivated by the nitrogen atoms.
  • the surface 4 can also be nitrided before the mask layer 2 is applied.
  • nitriding 5 of the sapphire surface an aluminum nitride-containing surface area is produced in the opening 3, which serves as nucleation seed 6 for the following
  • Growth step of the semiconductor layer sequence 10 serves, as shown in Figure IC.
  • the semiconductor layer sequence 10 is based on the one shown
  • Process parameters of the MOVPE process for example, the hydrogen content supplied, the growth of the MOVPE process
  • the n-doped semiconductor layer 11 are set such that no or at least almost no growth in a lateral direction, ie in a direction along the surface 4 of the growth substrate 1 takes place.
  • the n-type semiconductor layer 11 is grown by the MOVPE method in a hexagonal wurtzite structure whose c-axis is directed parallel to the growth direction 91.
  • the n-doped semiconductor layer 11 has a layer surface 111 in the form of the polar (000-1) -
  • an active zone 12 is grown with N polarity.
  • a p-doped semiconductor layer 13 of Mg-doped GaN with N-polarity is grown.
  • Semiconductor layer 13 may each comprise one or a plurality of functional layers such as
  • the n-doped and the p-doped semiconductor layer 11, 13 may each also comprise further group III materials such as Al and / or In.
  • the semiconductor layer sequence 10 grown by the MOVPE method mainly in the vertical growth direction 91 has a diameter of about 200 nm corresponding to the opening 3 of the mask layer 2 and a height in the growth direction of about 2 ⁇ m and is thus formed as a nanorod.
  • the active zone 12 is grown purely by way of example as a multiple quantum well structure with three active layers, between which
  • Barrier layers each having a thickness of less than 3 nm are arranged.
  • the active layers of the active zone 12 have InGaN, while the barrier layers have GaN. Due to the small cross-section of
  • Semiconductor layer sequence 10 in the form of nanostabs can elastic relaxation of the stresses in the active
  • the semiconductor layer sequence 10 in the region of the active zone 12 may have a somewhat enlarged cross section in comparison to the adjacent layers.
  • a reduction of lattice defects compared to conventional planar semiconductor layer sequences can thus be achieved.
  • this can also be designed, for example, as a single quantum well structure or as a multiple quantum well structure with a different number of active layers.
  • this can also be designed, for example, as a single quantum well structure or as a multiple quantum well structure with a different number of active layers.
  • the semiconductor layer sequence may be only partially designed as a nanorod.
  • the n-doped semiconductor layer and the active zone may be designed as a nanorod, while the cross section of the p-doped semiconductor layer may also widen.
  • the radiation-emitting semiconductor component 100 having the semiconductor layer sequence 10 produced according to the exemplary embodiment of FIGS. 1A to 1C forms a
  • LED light emitting diode
  • Semiconductor device 100 favors the formation of the semiconductor layer sequence 10 with nitrogen polarity and as a nanorod and the only small required
  • Radiation-emitting semiconductor device 100 may have a high efficiency.
  • the nanostable shape of the semiconductor layer sequence 10 enables the growth of the semiconductor layer sequence 10
  • the radiation-emitting semiconductor device 100 with the N-polarity semiconductor layer sequence 10 described herein can be configured as a high-brightness LED.
  • Semiconductor layer sequence 10 in combination with the shown layer sequence of n-doped layer 11, active zone 12 and p-doped layer 13 in the growth direction 91 without a required in the prior art tunnel diode and / or without a required in the prior art p-doped layer large thickness and / or without a p-doped layer deposited in front of the active zone.
  • a low operating voltage and avoidance of the above-described memory effect with regard to the p-type doping with magnesium can be achieved.
  • the nanostrip shape and the nitrogen polarity favor the use of the barrier layers in the active zone 12 with a small thickness and thus a large overlap of the wave functions and a large coupling of the active layers in the active zone, whereby a high carrier density and homogeneity and low Auger-like recombination losses and thus a high efficiency of the radiation-emitting semiconductor device 100 can be achieved.
  • FIG. 2 shows a radiation-emitting
  • the radiation-emitting semiconductor device 100 of Figure IC the radiation-emitting semiconductor device 101 of Figure 2, a growth substrate 1 of silicon carbide, on which a group III nitride compound semiconductor material 7 with nitrogen polarity and a layer thickness of some
  • the group III nitride compound semiconductor material 7 is shown in FIG.
  • Embodiment GaN with N polarity which is applied flat on the growth substrate 1.
  • a mask layer 2 is applied with an opening 3, so that the compound semiconductor material 7 in the opening 3 forms a nucleation 6, of which
  • the semiconductor layers 11, 12, 13 of the semiconductor layer sequence 10 Due to the formation of the semiconductor layer sequence 10 as nanostab, it is possible for the semiconductor layers 11, 12, 13 of the semiconductor layer sequence 10 to have a high level
  • the opening has a diameter of about 175 nm.
  • Semiconductor layer sequence 10 by means of an MOVPE method are set in the embodiment shown here, however, such that in addition to a crystal growth along the perpendicular to the substrate surface growth direction 91 and a growth with comparatively lesser
  • the thus formed semiconductor layer sequence 10 is a nanostrip with a
  • n-doped semiconductor layer 11 next to the layer surface 111, which corresponds to the polar (000-1) -crystal surface, forming further layer surfaces 112, 113, which in the embodiment shown to each other
  • the active zone 12 becomes at least two
  • Layer surfaces of the n-doped semiconductor layer 11 is formed and extends partially along the
  • the layer thicknesses in the corresponding regions are chosen such that in the region of the layer surface 111 light having a mean wavelength of about 450 nm, in the region of the layer surfaces 112, 113 light having a mean wavelength of about 380 nm and in the region of the transition of the layer surface 111 in the
  • the active zone has a plurality of different regions in which electromagnetic radiation having different wavelength ranges is emitted.
  • the lateral growth rate is further increased, so that the active zone 12 is additionally applied to the layer surfaces 114 and 115, which correspond to the equivalent nonpolar crystal faces (1-100) and (-1100).
  • the active zone 12 extends on the layer surfaces 114, 115 parallel to the main extension direction of the nanostable semiconductor layer sequence 10.
  • the p-doped semiconductor layer 13 is grown on the layer surfaces 111 to 115, so that an electrical contacting of the semiconductor layer sequence 10 of the p side over the entire length of the nanorod is possible.
  • FIGS. 4A to 4C show a further exemplary embodiment of a method for producing a
  • a plurality of semiconductor layer sequences 10 is grown on a growth substrate 1, which is shown in sections.
  • the arrangement of the semiconductor layer sequences 10 and their respective distance from one another can be achieved by a corresponding arrangement of the nucleation nuclei.
  • the semiconductor layer sequences 10 can also be arranged in the form of a two-dimensional photonic crystal, as a result of which the emission characteristic can be influenced without further optical elements.
  • a transparent dielectric material for example spin-on-glass or a polymer, is interposed between the
  • Semiconductor layer sequences 10 applied. For electrically contacting the p-sides of the semiconductor layer sequences 10, the semiconductor layer sequences 10 and
  • Transparent dielectric material 8 a transparent electrically conductive material, such as a TCO such as indium tin oxide, applied by the in the Can be coupled out of the radiation-emitting semiconductor device 103 plurality of semiconductor layer sequences 10 generated electromagnetic radiation.
  • a transparent electrically conductive material such as a TCO such as indium tin oxide
  • the transparent electrically conductive material 9 can also be applied between and on the semiconductor layer sequences 10, as shown in the radiation-emitting semiconductor device 104 according to the further embodiment in Figure 5.
  • FIGS. 6A to 6F show a further exemplary embodiment of a method for producing a
  • a plurality of semiconductor layer sequences 10 is grown on a growth substrate 1 and with a
  • reflective material 14 can thus additionally also an electrical contacting of the p-side of the
  • Semiconductor layer sequences 10 can be achieved.
  • a carrier substrate 15 is formed on the reflective material 14
  • a transparent can be electrically
  • Embodiment according to Figure 2 shown grown on a group III nitride compound semiconductor material as nucleation nuclei, the electrical contact from the n-side without the material 9 on the
  • Compound semiconductor material may be possible.
  • the radiation-emitting semiconductor component 105 has a high through its so-called thin-film structure

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Abstract

L'invention concerne un composant semi-conducteur émettant un rayonnement comprenant au moins une suite de couches semi-conductrices (10) à croissance épitaxiale le long d'une direction de croissance (91, 92), laquelle suite est basée sur un matériau semi-conducteur composé de groupe III-nitrure et présente dans la direction de croissance une polarité azote, la suite de couches semi-conductrices (10) présentant dans la direction de croissance (91, 92) une couche semi-conductrice (11) dopée n et sur celle-ci une zone active (12), la zone active (12) contenant au moins une couche active qui émet, lorsque le composant semi-conducteur fonctionne, un rayonnement électromagnétique, et la suite de couches semi-conductrices (10) étant conçue comme une nanobarre. L'invention concerne également un procédé de fabrication d'un composant semi-conducteur émettant un rayonnement.
PCT/EP2011/053327 2010-03-25 2011-03-04 Composant semi-conducteur émettant un rayonnement et procédé de fabrication d'un composant semi-conducteur émettant un rayonnement Ceased WO2011117056A1 (fr)

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