WO2011116495A1 - Hybrid vacuum deposition device - Google Patents

Abstract

A hybrid vacuum deposition device comprises a vacuum chamber (4), a cathode electric arc evaporating source (2), an intermediate frequency magnetron sputtering source (7), a DC magnetron sputtering source (8), a reaction gas ion source (10) and a work-piece bracket (3). Working gas enters the vacuum chamber (4) through gas intake pipes (6) set near the intermediate frequency magnetron sputtering source (7) and the DC magnetron sputtering source (8). Through optimal arrangement of said components, the gas concentration near the intermediate frequency magnetron sputtering source (7) and the DC magnetron sputtering source (8) is lower than that near the cathode electric arc evaporating source (2). Thus the advantages of each film forming source are exerted and the film faults are restrained.

Description

 Composite vacuum deposition equipment

Technical field:

 The invention patent relates to a novel composite vacuum deposition apparatus for surface modification of materials and functional film deposition. Background technique:

 Magnetron sputtering and cathodic arc ion plating have been widely used in the fields of wear parts, optical films, tooling, decoration, and microelectronics. In coating materials prepared by magnetron sputtering and vacuum cathodic arc ion plating, compound materials occupy an important position.

 Magnetron sputtering can be used to prepare a compound coating by sputtering a compound target, or a compound coating can be prepared by reactive magnetron sputtering of a metal or alloy target. The former generally requires RF sputtering power supply and high-cost compound target, and the deposition rate is low. The reactive sputtering target is easy to obtain and suitable for large-area uniform deposition. It has been widely used in industry, but it is caused by target poisoning. The ignition and sputtering states are unstable, and the coating defects are many. The main reason is that the surface of the target sputtering region will form a poorly deposited compound layer and the compound deposition caused by charge accumulation on the deposited layer. Layer breakdown discharge. Various methods have been developed, such as using a reactive gas pulse gas supply technique, obstructing the reaction gas from reaching the target surface, and using an alternating current sputtering power source, etc., which significantly suppress the adverse effects of target poisoning. However, the current reactive gas pulse gas supply technology and the zoned gas supply technology that hinder the reaction gas from reaching the target surface have the disadvantages of complicated structure, difficult control, and low ionization rate of the reaction gas.

 Reactive magnetron sputtering equipment also has insufficient ionization rate and low membrane/base bonding force. It needs to be matched with a cathodic arc evaporation source or an auxiliary ion source to further improve the ionization rate of the film-forming particles and improve the coating quality. Cathodic arc ion plating has high production efficiency, and the prepared coating has good mechanical properties and good film/base bonding force. It is an ideal industrial production method for thin films; however, there are many defects such as droplets to improve the coating performance. Various methods for suppressing coating defects prepared by cathodic arc ion plating have been tried, such as optimizing the magnetic field distribution of the target surface, reducing the current of the cathodic arc evaporation source, setting the magnetic filter tube in front of the target, and increasing the vicinity of the vacuum cathode arc evaporation source. The reaction gas partial pressure and other methods have received good results. The gas ion source can ionize the reaction gas and then reach the surface of the substrate, thereby significantly improving the reactivity of the reaction gas and the coating quality; however, the generated ion beam directly bombards the surface of the workpiece, and the sputtering gas and the sputtered particles are separated. There is no improvement. Simultaneous integration of multiple film forming devices including magnetron sputtering sources, cathodic arc evaporation sources, and auxiliary ion sources in the same device is one of the current vacuum coating equipment.

 At present, the composite coating equipment of the integrated magnetron sputtering source, cathode arc evaporation source and auxiliary ion source has not been developed to achieve the optimal distribution of the reaction gas, and the magnetron sputtering source poisoning and vacuum cathode arc sputtering are prepared when the coating is prepared. The adverse effects are still serious, and the development of new composite vacuum deposition equipment is of great significance.

Summary of the invention:

In order to overcome the deficiencies of the current coating equipment, the present invention proposes a novel composite vacuum deposition apparatus, characterized in that the composite vacuum coating equipment is mainly composed of a coating chamber 4, a cathode arc evaporation source 2, and an intermediate frequency magnetron sputtering. Source 7, DC magnetron sputtering source 8, gas ion source 10, working gas inlet pipe 6, workpiece holder 3 and vacuum acquisition system, vacuum measurement system, intake system, power supply and control system, etc., by composite vacuum deposition The optimized configuration of each component of the equipment realizes the optimal distribution of the concentration of the reaction gas, suppresses the problems of poisoning of the magnetron sputtering source target, vacuum cathode arc sputtering, etc., and lays a foundation for the thin film synthesis technology that obtains less micro defects. In the above composite vacuum deposition apparatus, the suction port 1 is mounted on the rear side of the vacuum chamber and connected to the vacuum obtaining system.

 In the above composite vacuum deposition apparatus, the cathode arc evaporation source 2 is installed on both sides of the vacuum chamber near the suction port 1, and the target surface faces the center line of the vacuum chamber.

 In the above composite vacuum deposition apparatus, the intermediate frequency magnetron sputtering source 7 is installed at an intermediate position on the left and right sides of the vacuum chamber, and the target surface faces the center line of the vacuum chamber.

 In the above composite vacuum deposition apparatus, the DC magnetron sputtering source 8 is mounted on the front door 9 of the vacuum chamber remote from the suction port, and the target surface faces the center line of the vacuum chamber.

 In the above composite vacuum deposition apparatus, the gas ion source 10 is installed at the center of the vacuum chamber 4, the ion beam is sprayed toward the suction port 1, and the gas ion source baffle 5 is disposed on the back and sides of the gas ion source 10 to suppress the reaction gas direction. The intermediate frequency magnetron sputtering source 7 and the DC magnetron sputtering source 8 are diffused in the direction, and the opening direction of the gas ion source shutter 5 faces the suction port 1.

 In the above composite vacuum deposition apparatus, the reaction gas is introduced into the vacuum chamber through the ion source 10.

 In the above composite vacuum apparatus, the working gas is introduced into the vacuum chamber 4 from the working gas intake duct 6 installed near the intermediate frequency magnetron sputtering source 7 and the DC magnetron sputtering source 8, and the working gas intake duct has a plurality of sets of intake holes of a specific diameter, the diameter of the intake holes on the working gas intake duct 6 near the DC magnetron sputtering source 8 is larger than the intake air on the working gas intake duct 6 near the intermediate frequency magnetron sputtering source 7 Hole diameter.

 In the above composite vacuum deposition apparatus, the cathode arc evaporation source 2 has a high reaction gas concentration, the reaction gas concentration near the DC magnetron sputtering source 8 is sufficiently low, and the reaction gas concentration near the intermediate frequency magnetron sputtering source 7 is centered.

 In the above composite vacuum deposition apparatus, the workpiece holder adopts a planetary rotating structure to improve the uniformity of the coating.

 The advantage of the design proposed by the patent of the present invention is that the flow of the working gas supplied from the intermediate frequency magnetron sputtering source 7 and the working gas inlet pipe 6 near the DC magnetron sputtering source 8 to the suction port suppresses the emission of the gas ion source 10. The diffusion of the reactive gas ions to the intermediate frequency magnetron sputtering source 7 and the DC magnetron sputtering source 8 reduces the concentration of the reaction gas near the intermediate frequency magnetron sputtering source 7 and the DC magnetron sputtering source 8, and the DC magnetron The concentration of the reaction gas in the attachment of the sputtering source 8 is lower than the concentration of the reaction gas in the vicinity of the intermediate frequency magnetron sputtering source 7. The concentration of the reaction gas in the vacuum chamber 4 can satisfy the optimized working range of the cathodic arc evaporation source, the intermediate frequency magnetron sputtering source, and the DC magnetron sputtering source, and significantly reduce the coating defects. The cathode arc evaporation source 2 has a high reaction gas concentration, and can form a high melting point compound on the target surface, and suppress the droplet ejection of the cathode arc evaporation source; the DC gas sputtering source 8 has the lowest reaction gas concentration, and the sputtering area surface There is basically no deposition of the compound film; the concentration of the reaction gas near the intermediate frequency magnetron sputtering source 7 is moderate, and it is advantageous to ensure that the coating composition satisfies the ideal stoichiometric ratio while suppressing the target ignition. By changing the gas flow rate into the gas ion source 10 and the working gas inlet duct 6, the intermediate frequency magnetron sputtering source 7 and the direct current magnetron sputtering source 8 close to the aperture of the working gas inlet duct 6 can further Control the concentration of the reaction gas concentration in the vacuum chamber.

BRIEF DESCRIPTION OF THE DRAWINGS - Figure 1 is a schematic view showing the structure of a composite vacuum deposition apparatus proposed by the present invention.

 Figure 1 is marked as follows -

1 - suction port, 2 - vacuum cathode evaporation source, 3 - workpiece holder, 4 - vacuum chamber, 5 - gas ion source baffle, 6 - working gas inlet pipe, 7 - intermediate frequency magnetron Sputtering source, 8 - DC magnetron sputtering source, 9 - vacuum chamber front door, 10 - gas ion source

Replacement page (Article 26) Implementation method:

 The invention will be described in detail below with reference to the accompanying drawings.

 A novel composite vacuum deposition apparatus mainly comprises a coating chamber 4, a cathodic arc evaporation source 2, an intermediate frequency magnetron sputtering source 7, a DC magnetron sputtering source 8, a gas ion source 10, a working gas inlet pipe 6, and a workpiece Shelf 3 and vacuum acquisition system, vacuum measurement system, air intake system, power supply and control system. The suction port 1 is installed on the rear side of the vacuum chamber and is connected to the vacuum obtaining system. The cathode arc evaporation source 2 is mounted on the wall of the vacuum chamber adjacent to both sides of the suction port 1, and the intermediate frequency magnetron sputtering source 7 is mounted on the wall of the vacuum chamber at the intermediate positions on the left and right sides, and the DC magnetron sputtering source 8 is installed away from the wall. On the front door 9 of the vacuum chamber of the suction port, the target surfaces of the cathode arc evaporation source 2, the intermediate frequency magnetron sputtering source 7 and the DC magnetron sputtering source 8 are all directed toward the center line of the vacuum chamber. The gas ion source 10 is installed at the center of the vacuum chamber 4, the ion beam is sprayed toward the suction port 1, and the gas ion source baffle 5 is disposed on the back and sides of the gas ion source 10 to suppress the reaction gas to the intermediate frequency magnetron sputtering source 7 and the DC magnetic field. The sputtering source 8 is diffused in the direction in which the opening direction of the gas ion source shutter 5 faces the suction port 1, and the opening size thereof is as small as possible without blocking the emission of the gas ion beam. The reaction gas is introduced into the vacuum chamber through the gas ion source 10, and the working gas is introduced into the vacuum chamber 4 from the working gas inlet pipe 6 installed near the intermediate frequency magnetron sputtering source 7 and the DC magnetron sputtering source 8, and the working gas is introduced. The pipeline has a plurality of sets of inlet holes of a specific diameter, and the diameter of the inlet holes on the working gas inlet duct 6 near the DC magnetron sputtering source 8 is larger than that of the working gas inlet duct 6 near the intermediate frequency magnetron sputtering source 7. Air intake hole diameter. The workpiece holder uses a planetary rotating structure to improve the uniformity of the coating.

 The flow of the working gas supplied from the intermediate frequency magnetron sputtering source 7 and the working gas inlet pipe 6 near the DC magnetron sputtering source 8 to the suction port suppresses the reaction gas ions emitted from the gas ion source 10 to the intermediate frequency magnetron sputtering. The diffusion of the source 7 and the DC magnetron sputtering source 8 reduces the concentration of the reaction gas in the vicinity of the intermediate frequency magnetron sputtering source 7 and the DC magnetron sputtering source 8, and the reaction gas concentration ratio of the accessory of the DC magnetron sputtering source 8 The concentration of the reaction gas in the vicinity of the intermediate frequency magnetron sputtering source 7 is lower. The concentration of the reaction gas in the vacuum chamber 4 can fully exert the advantages of the respective film forming sources: The high concentration of the reaction gas in the vicinity of the cathode arc evaporation source 2 contributes to the formation of a compound having a high melting point on the target surface, and suppresses droplet ejection of the cathode arc; The low reaction gas concentration of DC magnetron sputtering source 8 can significantly inhibit the deposition of compound film on the surface of the sputtering zone, which is beneficial to increase the deposition rate and film quality. The moderate reaction gas concentration of medium frequency magnetron sputtering source 7 suppresses target ignition. At the same time, it can ensure that the coating composition meets the ideal stoichiometric ratio. Further control can be further controlled by varying the gas flow rate into the gas ion source 10 and the working gas inlet conduit 6, the intermediate frequency magnetron sputtering source 7 and the pore size of the inlet port of the working gas inlet conduit 6 near the DC magnetron sputtering source 8. The concentration of the reaction gas in the vacuum chamber.

Claims

1. A composite vacuum coating apparatus, characterized in that: the composite vacuum coating equipment mainly comprises a coating chamber 4, a cathode arc evaporation source 2, an intermediate frequency magnetron sputtering source 7, a DC magnetron sputtering source 8, and a gas ion source. 10. Working gas inlet pipe 6, workpiece holder 3 and vacuum obtaining system, vacuum measuring system, air intake system, power supply and control system, etc., the optimal distribution of reaction gas concentration is achieved through the optimal configuration of each component of the composite vacuum deposition equipment. It inhibits the problems of magnetron sputtering source target poisoning, vacuum cathode arc sputtering, etc., and lays the foundation for thin film synthesis technology with less micro defects.  A composite vacuum coating apparatus according to claim 1, wherein: the suction port 1 is mounted on the rear side of the vacuum chamber and is connected to the vacuum obtaining system.  A composite vacuum coating apparatus according to claim 1, wherein: the cathode arc evaporation source 2 is mounted on both sides of the vacuum chamber adjacent to the suction port 1, and the target surface faces the center line of the vacuum chamber.  A composite vacuum coating apparatus according to claim 1, wherein the intermediate frequency magnetron sputtering source 7 is installed at an intermediate position on the left and right sides of the vacuum chamber, and the target surface faces the center line of the vacuum chamber.  A composite vacuum coating apparatus according to claim 1, wherein: the DC magnetron sputtering source 8 is mounted on the front door 9 of the vacuum chamber remote from the suction port, the target surface being oriented toward the center line of the vacuum chamber.  A composite vacuum coating apparatus according to claim 1, wherein: the gas ion source 10 is installed at a center position of the vacuum chamber 4, the ion beam is sprayed toward the suction port 1, and gas is disposed on the back and sides of the gas ion source 10. The ion source shutter 5 suppresses the diffusion of the reaction gas toward the intermediate frequency magnetron sputtering source 7 and the DC magnetron sputtering source 8, and the opening direction of the gas ion source shutter 5 faces the suction port 1.  A composite vacuum coating apparatus according to claim 1, wherein the reaction gas is introduced into the vacuum chamber through the gas ion source 10.  A composite vacuum coating apparatus according to claim 1, wherein: the working gas is introduced into the vacuum chamber from the working gas intake duct 6 installed near the intermediate frequency magnetron sputtering source 7 and the DC magnetron sputtering source 8. 4. The working gas inlet pipe has a plurality of sets of inlet holes of a specific diameter, and the diameter of the intake holes on the working gas inlet pipe 6 near the DC magnetron sputtering source 8 is larger than that of the medium frequency magnetron sputtering source 7 The diameter of the intake hole on the gas intake duct 6.  A composite vacuum coating apparatus according to claim 1, wherein: the cathode arc evaporation source 2 has a high concentration of a reactive gas, and the concentration of the reaction gas near the DC magnetron sputtering source 8 is sufficiently low, and the intermediate frequency magnetron sputtering The concentration of the reaction gas near the source 7 is centered.  10. The composite vacuum coating apparatus according to claim 1, wherein: the workpiece holder adopts a planetary rotating structure to improve uniformity of the coating.