[go: up one dir, main page]

WO2011158291A1 - Procédé de fabrication d'élément électroluminescent organique - Google Patents

Procédé de fabrication d'élément électroluminescent organique Download PDF

Info

Publication number
WO2011158291A1
WO2011158291A1 PCT/JP2010/004009 JP2010004009W WO2011158291A1 WO 2011158291 A1 WO2011158291 A1 WO 2011158291A1 JP 2010004009 W JP2010004009 W JP 2010004009W WO 2011158291 A1 WO2011158291 A1 WO 2011158291A1
Authority
WO
WIPO (PCT)
Prior art keywords
organic light
light emitting
bank
light
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2010/004009
Other languages
English (en)
Japanese (ja)
Inventor
南野裕隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Priority to PCT/JP2010/004009 priority Critical patent/WO2011158291A1/fr
Publication of WO2011158291A1 publication Critical patent/WO2011158291A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Definitions

  • the present invention relates to a method for manufacturing an organic light emitting device, and more particularly to a method for manufacturing an organic light emitting device by applying an ink for forming a functional layer and a light emitting layer between banks.
  • organic electroluminescence element (hereinafter referred to as “organic EL element”), which has been researched and developed in recent years, is a light-emitting element utilizing an electroluminescence phenomenon of an organic material, and includes a lower electrode (anode) and an upper part. A light emitting layer is interposed between the electrode (cathode). Such organic EL elements are arranged in a matrix to form an organic EL display.
  • pixels are partitioned by a bank made of an insulating material, and the shape of the light emitting layer is defined by the bank.
  • a hole injection layer, a hole transport layer, or a hole injection / transport layer is interposed between the lower electrode and the light emitting layer as necessary, and electrons are also inserted between the upper electrode and the light emitting layer as necessary.
  • An injection layer, an electron transport layer, or an electron injection / transport layer is interposed.
  • the lower electrode, the hole injection layer, the electron injection layer, and the upper electrode perform specific functions of injecting charges, these layers are referred to as “functional layers”.
  • Such an organic EL display includes a step of forming a functional layer including a lower electrode, a bank forming step of forming a bank that partitions adjacent pixel portions on the functional layer, and an ink including an organic light emitting material. It is produced through a step of forming a light emitting layer for forming an organic light emitting layer and a step of forming an upper electrode above the organic light emitting layer.
  • the ink (coating liquid) in which the material is dissolved in a solvent is filled between the banks by an inkjet method or the like. Many wet methods for drying ink are also used.
  • a solvent having a relatively high boiling point is used as a solvent so that each opening is filled with an equal amount of ink, and when the filled ink is dried, the solvent having a high boiling point is evaporated. Therefore, the substrate filled with ink is dried under reduced pressure in a dryer.
  • the driving voltage of the organic light emitting device is increased or the light emission efficiency is decreased because the residue of the bank material remains on the bottom surface of the opening between the banks, and the charge injection characteristic of the functional layer is the residue of the bank material. It is thought that it is inhibited by.
  • Patent Documents 2 and 3 by forming a bank and then treating with O2 plasma or irradiating with UV light, the bottom of the opening between the banks is formed. There is also a method of removing the residue remaining in the substrate, but O2 plasma treatment and UV light irradiation have a problem that the contact angle of the bank is lowered and the ink overflows, making it difficult to form the light emitting layer with a wet method with high accuracy. .
  • the present invention can stably produce an organic light emitting device having a low driving voltage and good luminous efficiency by reducing the residue of the bank material while ensuring the liquid repellency of the bank surface. It aims to provide a method.
  • a first step of preparing a substrate, and a second step of forming a functional layer including a lower electrode above the substrate A photosensitive resist material containing a fluorine component and a resin component is applied above the functional layer, and the photosensitive resist material is exposed and patterned to form openings corresponding to the pixel portions and adjacent pixels.
  • a fifth step of forming an organic light emitting layer and a sixth step of forming an upper electrode above the organic light emitting layer are formed in the fourth step.
  • the vibration energy of light is 458 to 472 kJ / mol.
  • the sum of the amount of light to be irradiated is decided to irradiation so that 690 ⁇ 1035mJ / cm 2.
  • vibration energy of light refers to the energy E of photons and is obtained from the wavelength of light.
  • the total amount of light to be irradiated (integrated light amount) is 690 to 1035 mJ / cm 2 using ultraviolet light having a vibration energy of light in the range of 458 to 472 kJ / mol. Since the opening and the bank are irradiated, the residue of the bank material can be reduced while ensuring the liquid repellency of the bank surface.
  • the organic light emitting layer can be accurately formed in the fifth step, and the bank residue is reduced.
  • favorable light emission characteristics an improvement in light emission efficiency, a decrease in driving voltage, and a longer life
  • uniform light emission characteristics can be obtained throughout the panel, and good light emission characteristics as an organic light emitting device can be obtained.
  • a part of the bank constituent materials (fluorine component and resin material) remains as a residual component on the functional layer in the opening between the banks. If the light emitting layer is formed in the opening between the banks while the residual component remains, the charge injection characteristic of the functional layer is deteriorated.
  • the resin is mainly used as a residual component remaining on the functional layer of the opening by irradiating the opening and the bank with the ultraviolet light having the vibration energy in the specific range.
  • the binding of the components is dissociated and the residual components are reduced.
  • a light emitting layer is formed in the opening part between banks in the state in which the residual component was reduced, the fall of a charge injection characteristic is suppressed.
  • the ultraviolet rays irradiated in the fourth step have energy in the above range and the integrated light amount is also irradiated in the above range, the bond of the fluorine component is not actively dissociated. Therefore, the bond of fluorine components on the bank surface is not damaged by ultraviolet rays, and the liquid repellency of the bank surface is maintained.
  • the opening is filled with ink containing an organic light emitting material in the fifth step, the ink does not overflow from the opening, and the organic light emitting layer can be formed satisfactorily.
  • a first step of preparing a substrate a second step of forming a functional layer including a lower electrode above the substrate, and above the functional layer, By applying a photosensitive resist material containing a fluorine component and a resin component, and exposing and patterning the photosensitive resist material, an opening corresponding to the pixel portion is formed and a bank that partitions adjacent pixel portions is formed.
  • the fourth step of irradiating the opening and the bank with ultraviolet rays and after the fourth step, the organic light emitting layer is coated with an ink containing an organic light emitting material and dried.
  • a sixth step of forming the upper electrode above the organic light emitting layer is one embodiment of the present invention.
  • ultraviolet light having a vibration energy of light in the range of 458 to 472 kJ / mol is used.
  • Sum morphism that amount (integrated light quantity) is decided to irradiation so that 690 ⁇ 1035mJ / cm 2.
  • the organic light emitting layer can be formed with high accuracy and the residue of the bank material is reduced, so that the organic light emitting device has good light emission characteristics (improvement of light emission efficiency, decrease in driving voltage, and longer life). can get.
  • the vibration energy of the ultraviolet light irradiated in the fourth step is set to be larger than the maximum value of the bond dissociation energy of the resin component and smaller than the minimum value of the bond dissociation energy of the fluorine component.
  • the integrated light quantity in the fourth step is represented by the product of the illuminance and the irradiation time.
  • the illuminance is set in the range of 5 to 150 mW / cm 2 and the irradiation time is set to 5 to 200 seconds.
  • a hole injection layer (HIL) containing tungsten oxide (WOx) is used as the functional layer, and the normalized ionic strength of the fluorine component on the functional layer after the fourth step (standardized with reference to the tungsten oxide component). Value) is 3.0 ⁇ 10 0 or more and 1.0 ⁇ 10 1 or less.
  • the normalized ionic strength of the fluorine component in the bank after the fourth step is 0.3 or more and less than 1 with respect to the normalized ionic strength of the fluorine component in the bank after the third step. To do. By doing so, the residual amount of the fluorine component does not change greatly before and after the UV irradiation, so that the liquid repellency of the bank surface is maintained.
  • the contact angle of the ink containing the organic light emitting material with respect to the bank after being irradiated with ultraviolet rays is set to 35 ° to 60 °. If it does so, in an 5th process, since an ink does not overflow easily from an opening part, an organic light emitting layer can be formed favorably.
  • the resin material diffused from the bank to the hole injection layer in the third step by irradiating the opening with ultraviolet rays in the fourth step. Remove.
  • An organic light emitting display device can be constituted by the organic light emitting device manufactured by the above manufacturing method and a drive circuit for driving the organic light emitting device.
  • a first step of preparing a substrate a second step of forming a functional layer including a lower electrode above the substrate, and an upper portion of the functional layer
  • a photosensitive resist material containing a fluorine component and a resin component is applied, and the photosensitive resist material is exposed and patterned to form an opening corresponding to the pixel portion and to partition adjacent pixel portions.
  • an ink containing an organic light-emitting material is applied to the opening and dried.
  • a fifth step of forming the light emitting layer and a sixth step of forming the upper electrode are provided above the organic light emitting layer.
  • the vibration energy of the ultraviolet light is determined from the dissociation energy of the resin component used. The value is larger and smaller than the dissociation energy of the fluorine component to be used. Further, the total amount of light to be irradiated (integrated light amount) is the normalized ion intensity of the fluorine component in the bank after the fourth step. The ratio value was 0.3 or more and less than 1 with respect to the normalized ionic strength of the fluorine component in the later bank.
  • uniform light emission characteristics can be obtained throughout the panel, and good light emission characteristics as an organic light emitting device can be obtained.
  • the dissociation energy of the resin material is 335 to 457 kJ / mol
  • the dissociation energy of the fluorine component is 472 to 524 kJ / mol
  • the vibration energy of the ultraviolet light is 458 to 472 kJ / mol
  • the integrated light quantity is 690 to 1035 mJ / cm 2. It is preferable that
  • the energy of the UV light for removing the resin component is smaller than the energy of the UV light for removing the fluorine component.
  • the fluorine component contained in the bank can be left by setting the irradiation time appropriately.
  • the TFT substrate 1 includes, for example, alkali-free glass, soda glass, non-fluorescent glass, phosphoric acid glass, boric acid glass, quartz, acrylic resin, styrene resin, polycarbonate resin, epoxy resin, polyethylene, polyester, and silicone.
  • An amorphous TFT (EL element drive circuit) is formed on a base substrate made of an insulating material such as a resin or alumina.
  • the protective resist covering the TFT substrate 1 is peeled off, an organic resin is spin-coated on the TFT substrate 1, and patterned by PR / PE (photoresist / photoetching).
  • PR / PE photoresist / photoetching
  • a planarizing film 1a thickness 4 ⁇ m is formed.
  • An anode electrode as a lower electrode is formed on the planarizing film 1a.
  • a first anode electrode 2 made of silver-palladium-copper alloy (APC) is formed on the planarizing film 1a.
  • the first anode electrode 2 is formed, for example, by forming a thin film by APC by sputtering and patterning the thin film in a matrix form by PR / PE (thickness 150 nm).
  • the first anode electrode 2 may be formed by vacuum deposition or the like.
  • the second anode electrode 3 is formed in a matrix.
  • the second anode electrode 3 is formed, for example, by forming an ITO thin film by a plasma vapor deposition method and patterning the ITO thin film by PR / PE (thickness 110 nm).
  • a hole injection layer 4 is formed on the second anode electrode 3.
  • the hole injection layer 4 is formed by sputtering a material that performs a hole injection function, such as metal oxide, metal nitride, or metal nitride, for example, WOx (tungsten oxide) and patterning it with PR / PE (thickness). 40 nm).
  • the hole injection layer 4 is formed not only on the anode electrode but over the entire upper surface of the substrate 1.
  • the anode electrode and hole injection layer 4 formed as described above correspond to a functional layer.
  • the second anode electrode 3 is interposed between the first anode electrode 2 and the hole injection layer 4 and has a function of improving the bonding property between the layers.
  • Bank formation process As shown in FIG. 1G, a bank 5 is formed on the hole injection layer 4.
  • a region where the bank 5 is formed on the hole injection layer 4 is a region corresponding to a boundary between adjacent light emitting layer formation scheduled regions.
  • the bank 5 is formed by forming a bank material layer so as to cover the whole of the hole injection layer 4 and removing a part of the formed bank material layer by PR / PE (thickness: 1 ⁇ m).
  • FIG. 1 shows a cross-sectional shape of the substrate 1 cut in the horizontal direction
  • the bank 5 extends along the top surface of the substrate 1 in the vertical direction (the front and back direction in FIG. 1).
  • a plurality of banks 5 are arranged over the entire top surface of the substrate 1.
  • the bank 5 may be a striped line bank that extends only in the vertical direction, or may be a pixel bank that extends in the vertical and horizontal directions and has a planar shape in the form of a cross.
  • FIG. 2 is a diagram for specifically explaining the bank formation process.
  • a substrate on which a hole injection layer is formed is put, and a bank material is applied thereon by spin coating as shown in FIG. 2 (b), thereby forming a bank material layer 5a.
  • the bank material a photosensitive resist material containing a fluorine component compound and a resin component material is used.
  • this bank material is subjected to an etching process, a baking process, etc. after application, and ink is applied to the bank surface in the next process, so that it has resistance to organic solvents, It is desirable to use a material that does not easily cause alteration.
  • a photosensitive resist containing a fluororesin such as a fluorinated polyolefin resin, a fluorinated polyimide resin, or a fluorinated polyacrylic resin
  • a fluororesin such as a fluorinated polyolefin resin, a fluorinated polyimide resin, or a fluorinated polyacrylic resin
  • the fluororesin include a fluorine-containing polymer described in JP-T-2002-543469; LUMIFLON (registered trademark, Asahi Glass) which is a copolymer of fluoroethylene and vinyl ether.
  • a photomask having an opening corresponding to the bank formation scheduled region is overlaid on the bank material layer 5a. Then, when UV exposure is performed, only the portion of the bank material layer 5a irradiated with UV light is polymerized and cured.
  • the bank material layer 5a is patterned into a bank shape because the uncured portion is removed and the cured portion remains.
  • a forward-tapered bank 5 is formed as shown in FIG.
  • a recess is formed between the banks 5, and the hole injection layer 4 is exposed on the bottom surface of the recess.
  • the uncured portion of the bank material layer 5a is basically removed, but usually a portion of the bank material layer 5a remains on the bottom surface of the recess as a residue 5c.
  • the next UV cleaning step is performed.
  • UV cleaning process Ultraviolet light having a vibration energy of light in the range of 458 to 472 kJ / mol is irradiated from the substrate on which the bank 5 is formed.
  • a low-pressure mercury lamp having a main radiation intensity at a main wavelength of 254 nm is used.
  • a wavelength of 254 nm corresponds to vibration energy of 472 kJ / mol.
  • the illuminance when the substrate is irradiated with UV light is preferably set in the range of 5 to 150 mW / cm 2 .
  • the irradiation time is set so that the total amount of UV light to be irradiated (integrated light amount) is 690 to 1035 mJ / cm 2 .
  • Hole transport layer formation process The hole transport layer 6 is formed as shown in FIG. 3A by filling the recesses between the banks 5 with ink containing the material of the hole transport layer and drying.
  • Examples of the material for the hole transport layer 6 include poly (3,4-ethylenedioxythiophene) doped with polystyrene sulfonic acid (PEDOT-PSS) and derivatives thereof (such as copolymers).
  • the thickness of the hole transport layer 6 is usually 10 nm or more and 100 nm or less, for example, 20 nm.
  • Light emitting layer forming process The recesses between the banks 5 are filled with ink containing an organic light emitting material. That is, ink is printed by a droplet discharge method (inkjet method) between the plurality of banks 5 over the entire substrate 1.
  • a dispenser method As a method for filling the ink between the banks, a dispenser method, a nozzle coating method, a spin coating method, intaglio printing, letterpress printing, or the like may be used.
  • the thickness of the light emitting layer 7 is 60 to 90 nm.
  • organic light-emitting materials include, for example, oxinoid compounds, perylene compounds, coumarin compounds, azacoumarin compounds, oxazole compounds, oxadiazole compounds, perinone compounds, pyrrolopyrrole compounds, naphthalene compounds, anthracene compounds described in JP-A-5-163488 , Fluorene compounds, fluoranthene compounds, tetracene compounds, pyrene compounds, coronene compounds, quinolone compounds and azaquinolone compounds, pyrazoline derivatives and pyrazolone derivatives, rhodamine compounds, chrysene compounds, phenanthrene compounds, cyclopentadiene compounds, stilbene compounds, diphenylquinone compounds, styryl compounds , Butadiene compound, dicyanomethylenepyran compound, dicyanomethylenethiopyran compound, fluorescein compound , Pyrylium compounds, thiapyrylium compounds, ser
  • the ink is manufactured by dissolving the organic light emitting material constituting the light emitting layer 7 as a solute and dissolving it in a solvent containing a solvent having a relatively high boiling point (boiling point: 170 to 300 ° C.).
  • the high boiling point solvent examples include cyclohexylbenzene, diethylbenzene, decahydronaphthalene, methylbenzoate, acetophenone, phenylbenzene, benzyl alcohol, tetrahydronaphthalene, isophorone, n-dodecane, dicyclohexyl, and p-xylene glycol dimethyl ether.
  • These solvents may be used alone, or may be a mixture of a plurality of solvents, or a mixture of the above high boiling point solvent and a low boiling point solvent.
  • Electron injection layer, upper electrode, sealing layer formation process As shown in FIGS. 3C to 3E, an electron transport layer 8, a cathode electrode 9 as an upper electrode, and a sealing layer 10 are sequentially formed so as to cover the bank 5 and the light emitting layer 7.
  • the electron transport layer 8, the cathode electrode 9, and the sealing layer 10 are formed so as to be continuous with the pixel planned region of the adjacent organic EL element beyond the pixel planned region defined by each bank 5.
  • the electron transport layer 8 is formed by, for example, ETL vapor deposition (thickness 20 nm) using barium, lithium fluoride, or a combination thereof.
  • the electron transport layer 8 has a function of transporting electrons injected from the cathode electrode 9 to the light emitting layer 7.
  • the cathode electrode 9 is formed by plasma deposition of a light transmissive material, for example, ITO, IZO (indium zinc oxide) or the like (thickness: 100 nm).
  • a light transmissive material for example, ITO, IZO (indium zinc oxide) or the like (thickness: 100 nm).
  • the sealing layer 10 is formed of a material such as SiN (silicon nitride) or SiON (silicon oxynitride) by CVD (thickness: 1 ⁇ m).
  • the sealing layer 10 has a role of suppressing the light emitting layer 7 and the like from being exposed to moisture or being exposed to air.
  • an organic EL display panel in which top emission type organic EL elements are arranged in a matrix is manufactured.
  • the color filter substrate is bonded to the panel produced as described above via a sealing material.
  • the panel is divided into a predetermined size.
  • the drive circuit is mounted.
  • an organic light emitting display device is manufactured.
  • FIG. 4 is a chart showing the binding energy of various molecules and the vibration energy (kJ / mol) of light of various lamps.
  • the CF bond dissociation energy in fluorobenzene is 524 kJ / mol
  • the CF bond energy in fluoromethane is 472 kJ / mol
  • the UV light (254 nm) of a low-pressure mercury lamp Is less than or equal to the C—F bond energy because its vibrational energy is 472 kJ / mol. Therefore, the C—F bond is not dissociated by the vibrational energy of the UV light (254 nm).
  • FIG. 4 shows methyl group, CH bond energy (457 kJ / mol, 432 kJ / mol) of methane, etc.
  • the vibration energy (458 to 472 kJ / mol) of the UV light is larger than the bond energy of the CH bond in a general resin component. Therefore, irradiation with UV light having vibration energy of 458 to 472 kJ / mol can dissociate the C—H bond and decompose the resin component.
  • FIG. 6 schematically shows a state in which when the UV light (wavelength 254 nm) is irradiated from above the bank, the residue and the CH bond on the bank surface are dissociated and the CF bond remains without dissociation.
  • the total sum of UV light (integrated light amount) is also set within the range of 690 to 1035 mJ / cm 2 .
  • the resin component in the residue is decomposed while reliably suppressing the decomposition of the fluorine component present on the surface of the bank 5 and ensuring the liquid repellency of the surface of the bank 5.
  • the area occupied by the bank residue on the hole injection layer 4 can be reduced.
  • Experiment 1 Residual amount of fluorine A bank was formed on a substrate by spin-coating a bank material on a flat glass and patterning it with a photolithographic technique. Here, it was formed on a substrate (a bank having a width of 30 ⁇ m with a gap of 60 ⁇ m).
  • the illuminance for irradiating the UV light (wavelength 254 nm) from above the bank is constant at 23 mW / cm 2 , and the irradiation time of the UV light is 0 seconds, 10 It was examined how the residual amount of fluorine on the surface of the hole injection layer 4 was changed by changing the seconds, 30 seconds, and 60 seconds.
  • the measurement of the residual amount of fluorine was performed by measuring the negative ion intensity on the surface of the hole injection layer 4 under the following analysis conditions using a time-of-flight secondary ion mass spectrometry (TOF-SIMS) method.
  • TOF-SIMS time-of-flight secondary ion mass spectrometry
  • FIG. 7 is a graph showing the measurement results, in which the negative ionic strength measurement value before UV irradiation is normalized as the reference value 10.
  • Rf is a measured value when the bank 5 is not formed on the hole injection layer 4.
  • the normalized ion intensity is 3.0 ⁇ 10 0 to 1 It is within the range of 0.0 ⁇ 10 0 and is smaller in the range of 0.3 or more and less than 1 compared with the normalized fluorine ion intensity (1.0 ⁇ 10 1 ) before irradiation (0 second). However, it can be seen that about 100 times as much fluorine remains as compared with Rf.
  • the ink used was butyl benzoate as solvent, polyfluorene polymer (product name: Poly (9,9-di-n-dodecylfluorenyl-2,7-diyl), manufactured by Aldrich), and the concentration was 1.0 wt% It is.
  • FIG. 8 is a diagram and a table showing the results.
  • the contact angle is 45 ° in the initial stage (0 seconds), the contact angle gradually decreases as the irradiation time elapses, and the contact angle decreases to 35 ° when 45 seconds elapse. Yes.
  • the printability of the ink is good when the contact angle of the ink with respect to the bank surface is 35 ° or more. That is, if the contact angle is in the range of 35 ° or more and 60 ° or less, the ink is unlikely to overflow from between the banks when the ink is filled in the openings between the banks as shown in FIG. 6C. Experience has shown that the light emitting layer 7 can be satisfactorily formed over the entire panel.
  • the contact angle of the ink with respect to the banks is maintained at 35 ° or more, and ink can be printed favorably between the banks (inkjet It can be filled with.
  • the contact angle of the ink with respect to the bank surface varies somewhat depending on the type of the bank material used and the solvent of the ink, but if a bank material and an ink solvent containing a fluorine component and a resin component that are generally used in an organic EL element are used. It is considered that a result almost similar to the result shown in FIGS.
  • the second anode electrode 3 (ITO layer, thickness 100 nm), the hole injection layer 4 (WOx layer, thickness 30 nm), and the bank 5 are formed on the substrate. Then, after irradiating UV light (wavelength 254 nm) at an illuminance of 23 mW / cm 2 for 0 seconds, 30 seconds, and 45 seconds, the ink is applied between the banks and dried, the hole transport layer 6 (thickness 30 nm), A light emitting layer 7 (thickness 95 nm) is formed, and an electron transport layer 8 (Ba layer, thickness 5 nm) and a cathode electrode 9 (Al layer, thickness 120 nm) are formed in this order to form a device sample for testing. did.
  • FIG. 9 is a graph of J- ⁇ characteristics showing the result.
  • FIG. 10 is a graph of VJ characteristics showing the result.
  • the drive voltage required to obtain the same current density is higher than that when the UV light is not irradiated (0 seconds). It is low.
  • the degree of decrease in the drive voltage is about 2 V at a current density of 10 mA / cm 2 .
  • FIG. 11 is a graph showing the results. It can be seen that the element sample irradiated with UV light has less decrease in luminance over time.
  • FIG. 12 is a graph showing the results.
  • the element sample irradiated with UV light has a smaller initial driving voltage and a smaller increase in driving voltage over time than the element sample not irradiated with UV light.
  • the light emission color of the light emitting layer in the organic EL display is not mentioned, but the present invention can be applied not only to a single color display but also to a full color display organic EL display.
  • the organic EL element corresponds to a subpixel of each RGB color, and adjacent RGB subpixels are combined to form one pixel, and this pixel is arranged in a matrix to form an image display area Is formed.
  • the top emission type organic EL display has been described as an example.
  • the present invention can be similarly applied to the case where the light emitting layer of the bottom emission type organic EL display is formed.
  • the present invention can also be applied to an organic TFT (Thin Film Transistor).
  • the present invention is effective for manufacturing an organic EL panel such as an organic EL display as well as an organic EL light source by a method of forming a light emitting layer by a wet method.
  • the light emission characteristics are good and uniform light emission characteristics can be obtained in the image display surface, which contributes to the improvement of the image quality.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un procédé de production stable d'un élément électroluminescent organique doté d'une faible tension de pilotage et d'une bonne efficacité lumineuse, par la réduction des résidus de matériau de batterie tout en garantissant une résistance au liquide des surfaces de batterie. A cet effet, un matériau photorésistant photosensible présente un constituant fluorine et un constituant résine comme matériau de batterie, et des batteries (5) sont formées sur une couche d'injection de trou. Une lumière ultra-violette dotée d'une énergie de vibration lumineuse de 458 à 472 kJ/mol est projetée depuis la partie supérieure d'un substrat dans laquelle les batteries (5) sont formées. Le temps d'exposition est réglé de telle sorte que le volume total de lumière UV projetée (volume cumulé de lumière) est de 690 à 1,035 mJ/cm2. Des couches de transport de trou sont formées dans des sections concaves entre les batteries (5) par remplissage des sections concaves avec une encre d'un matériau de couche de transport de trou, et par leur séchage. Les sections concaves entre les batteries (5) sont également remplies d'une encre comprenant un matériau électroluminescent organique, qui est ensuite séchée sous l'effet d'une pression réduite et cuite pour former une couche électroluminescente.
PCT/JP2010/004009 2010-06-16 2010-06-16 Procédé de fabrication d'élément électroluminescent organique Ceased WO2011158291A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2010/004009 WO2011158291A1 (fr) 2010-06-16 2010-06-16 Procédé de fabrication d'élément électroluminescent organique

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2010/004009 WO2011158291A1 (fr) 2010-06-16 2010-06-16 Procédé de fabrication d'élément électroluminescent organique

Publications (1)

Publication Number Publication Date
WO2011158291A1 true WO2011158291A1 (fr) 2011-12-22

Family

ID=45347724

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2010/004009 Ceased WO2011158291A1 (fr) 2010-06-16 2010-06-16 Procédé de fabrication d'élément électroluminescent organique

Country Status (1)

Country Link
WO (1) WO2011158291A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110164948A (zh) * 2019-06-13 2019-08-23 京东方科技集团股份有限公司 一种像素界定层、制作方法和显示面板

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073222A (ja) * 2004-08-31 2006-03-16 Asahi Glass Co Ltd 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
JP2006185869A (ja) * 2004-12-28 2006-07-13 Asahi Glass Co Ltd 有機電界発光素子及びその製造方法
JP2009117392A (ja) * 2007-05-31 2009-05-28 Panasonic Corp 有機ｅｌディスプレイパネル、およびその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006073222A (ja) * 2004-08-31 2006-03-16 Asahi Glass Co Ltd 有機ｅｌ表示装置及び有機ｅｌ表示装置の製造方法
JP2006185869A (ja) * 2004-12-28 2006-07-13 Asahi Glass Co Ltd 有機電界発光素子及びその製造方法
JP2009117392A (ja) * 2007-05-31 2009-05-28 Panasonic Corp 有機ｅｌディスプレイパネル、およびその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110164948A (zh) * 2019-06-13 2019-08-23 京东方科技集团股份有限公司 一种像素界定层、制作方法和显示面板
CN110164948B (zh) * 2019-06-13 2021-12-28 京东方科技集团股份有限公司 一种像素界定层、制作方法和显示面板
US12029076B2 (en) 2019-06-13 2024-07-02 Boe Technology Group Co., Ltd. Pixel defining layer, manufacturing method therefor, and display panel

Similar Documents

Publication Publication Date Title
CN102106186B (zh) 有机电致发光显示面板
CN103038909B (zh) 有机el元件及其制造方法
CN103314462B (zh) 有机el显示面板和有机el显示装置
JP5096648B1 (ja) 有機ｅｌディスプレイパネル及びその製造方法
US9029843B2 (en) Organic electroluminescence element
US8530922B2 (en) Organic EL device and method for manufacturing same
US9012897B2 (en) Organic EL element, display device, and light-emitting device
JP6019376B2 (ja) 有機ｅｌ表示パネル
CN103053040B (zh) 有机el元件
US9012896B2 (en) Organic EL element
US9000475B2 (en) Light-emitter and transistor
JP6336042B2 (ja) 有機ｅｌ素子および有機ｅｌ素子の製造方法
JP6142213B2 (ja) 有機ｅｌ素子および有機ｅｌ素子の製造方法
WO2011122481A1 (fr) Procédé de fabrication de substrat pour dispositif électroluminescent
US9324964B2 (en) Organic light-emitting element with hole injection layer having concave portion
US9318728B2 (en) Method for producing organic light-emitting element, method for aging organic light-emitting element, organic light-emitting element, organic light-emitting device, organic display panel, and organic display device
JP6040445B2 (ja) 有機ｅｌパネルとその製造方法
US9065069B2 (en) Method for producing organic light-emitting element
WO2011158291A1 (fr) Procédé de fabrication d'élément électroluminescent organique
WO2013183093A1 (fr) Elément el organique, son procédé de production, panneau el organique, dispositif électroluminescent el organique, et dispositif d'affichage el organique

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10853177

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10853177

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP