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WO2011027276A1 - Dispositif delo à matériau à faible indice - Google Patents

Dispositif delo à matériau à faible indice Download PDF

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Publication number
WO2011027276A1
WO2011027276A1 PCT/IB2010/053873 IB2010053873W WO2011027276A1 WO 2011027276 A1 WO2011027276 A1 WO 2011027276A1 IB 2010053873 W IB2010053873 W IB 2010053873W WO 2011027276 A1 WO2011027276 A1 WO 2011027276A1
Authority
WO
WIPO (PCT)
Prior art keywords
low
electrode layer
index material
layer
oled device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2010/053873
Other languages
English (en)
Inventor
Hans-Peter Loebl
Herbert F. Boerner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Intellectual Property and Standards GmbH
Koninklijke Philips NV
Original Assignee
Philips Intellectual Property and Standards GmbH
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Intellectual Property and Standards GmbH, Koninklijke Philips Electronics NV filed Critical Philips Intellectual Property and Standards GmbH
Publication of WO2011027276A1 publication Critical patent/WO2011027276A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses

Definitions

  • the invention relates to an OLED device and a method for its production, said OLED device comprising a low-index intermediate material.
  • an Organic Light Emitting Diode (OLED) device which comprises common OLED components like a transparent substrate, a transparent ITO anode, an organic electroluminescent layer, and a cathode. Moreover, a grid of silicon dioxide (Si0 2 ) is disposed on the ITO layer in order to improve the outcoupling of light into the substrate.
  • OLED Organic Light Emitting Diode
  • the invention relates to an OLED device comprising the following sequence of components:
  • a first electrode layer to which a first electrical potential can be applied during operation will preferably be transparent to allow the passage of light. It may for example consist of ITO.
  • Typical values of the refractive index of the low-index material range between about 1.3 and about 1.7.
  • the low-index material will usually be transparent.
  • the low-index material is arranged on the first electrode layer in an irregular pattern and/or a pattern of "islands". The term “islands” shall denote in this context small, unconnected regions or spots of material.
  • the organic electroluminescent layer may comprise several sub-layers for electron or hole injection, charge transportation and/or light generation. Suitable examples of such layers may be found in literature (e.g. Shinar, Joseph (Ed.), "Organic Light-Emitting Devices: A Survey", NY: Springer- Verlag (2004); Klaus Muellen, Ullrich Scherf (Eds.), “Organic Light Emitting Devices: Synthesis, Properties and Applications", John Wiley & Sons (2006)).
  • a second electrode layer to which, during operation, a second electrical potential can be applied.
  • said second electrical potential will be higher than the first electrical potential applied to the first electrode layer, making the latter operate as an anode and the second electrode operate as a cathode.
  • the invention relates to a method for manufacturing an OLED device, particularly an OLED device of the aforementioned kind.
  • the method comprises the following steps, which are preferably executed at least once in the listed sequence:
  • the OLED device and the method make use of a low-index material disposed on a first electrode layer and embedded in a subsequent organic electroluminescent layer. Functionally, this material has the positive effect to improve the light outcoupling from the organic layer into the first electrode layer and a substrate beneath it. Moreover, the irregular and/or island pattern of the material can readily be manufactured by various methods, allowing to keep production costs of the OLED device low.
  • the step b) of depositing a low-index material on the first electrode layer may particularly comprise the following sub-steps:
  • a photoresist layer on the first electrode layer.
  • Suitable photoresist materials e.g. SU-8 and procedures to deposit them are known to a person skilled in the art. It should be noted that “positive” and “negative” photoresist materials can be distinguished. In negative photoresist materials, regions exposed to light (and heated afterwards) stabilize and hence remain after development. In positive photoresist materials, on the contrary, regions exposed to light become soluble, and it are the unexposed regions which remain after development.
  • the step b2) of opening the photoresist layer to create holes may particularly comprise exposing the photoresist layer locally to light and removing subsequently the exposed or unexposed regions of this layer.
  • exposing the photoresist layer locally to light may particularly comprise exposing the photoresist layer locally to light and removing subsequently the exposed or unexposed regions of this layer.
  • regions of the photoresist material are removed that were not exposed to light.
  • regions of the photoresist material are removed that were exposed to light.
  • the selective local exposure of the photoresist layer to light can be done in several ways.
  • the exposure to light is done through a suitable mask.
  • This mask may for example be a metal sheet with holes at positions where the photoresist layer shall be irradiated. In this case a positive photoresist will typically be used. These holes in the metal mask can be fabricated easily and cost effective e.g. by means of a laser.
  • the photoresist layer may comprise opaque particles, wherein these particles may for example comprise small colored and/or non-transparent glass beads in the size of about 0.5 ⁇ to about 10 ⁇ .
  • the diameters and/or the average mutual distances of the opaque particles typically lie in the range of the desired diameters of the holes in the photoresist layer.
  • the particles shadow the photoresist material below them.
  • the corresponding shadowed regions will later remain while the rest of the photoresist (and the particles) can be removed.
  • step b) of depositing comprises the sub-step of spraying a low-index material onto the first electrode layer.
  • spray shall denote an aerosol comprising droplets with the low-index material or a precursor thereof. Structures (e.g.
  • the size and density of the structures can hence readily be controlled via the parameters of the spray (droplet size, droplet density etc.).
  • the spray conditions may for example be chosen such that islands with a size (diameter) between about 0.5 ⁇ and about 30 ⁇ are generated.
  • the spraying procedure automatically guarantees that the resulting structures have a smooth shape without steep edges, such that the organic layers and the metals of the second electrode can be deposited by e.g. vacuum evaporation without creating cracks or holes.
  • the spray may comprise a precursor of a sol-gel process.
  • Sol-gel polymerization may particularly comprise the use of an ultrasonically sprayed aerosol with such a precursor.
  • precursors are acidid solutions comprising tetraethyl orthosilicate (TEOS) (TEOS : ethanol : water : HC1).
  • the low-index material is preferably cured, i.e. its chemical and/or physical state is altered at elevated temperatures and/or in a special atmosphere.
  • a deposited spray comprising a polymer solution may for example be dried and backed according to the manufactures specification to achieve structures of hardened polymer that do not contain any solvent.
  • Sprayed droplets of a sol-gel precursor may for example receive a bakeout at temperatures above about 80° C to form Si0 2 islands with a low index of refraction of about 1.4.
  • Islands of the low-index material may have equal sizes and shapes or different sizes and shapes. Moreover, the islands may be arranged in a regular pattern or in an irregular pattern on the first electrode layer.
  • irregular patterns have the advantage that they may readily be produced (e.g. by distributing opaque particles in the photoresist layer or by spraying) because they require little fine tuning. Moreover, irregular patterns help to avoid optical artifacts like Moire patterns or other optical effects due to optical interference at a regular grating.
  • the thickness of the low-index material on the first electrode layer preferably ranges between about 50 nm and about 500 nm, most preferably being about 100 nm ⁇ 10 %, wherein the thickness is measured perpendicularly to the layers of the OLED device.
  • the low- index material When the low- index material is arranged in islands, their diameter typically ranges between about 0.1 ⁇ and about 100 ⁇ , preferably between about 1 ⁇ and about 20 ⁇ , most preferably between about 2 ⁇ and about 15 ⁇ , wherein the diameter is measured parallel to the layers of the OLED device.
  • the area covered by the low-index material may typically range between about 1 and 20 %, preferably between about 2 and 15 %, most preferably between about 5 and 10 % of the area of the first electrode layer.
  • the refractive index of the low- index material has to be lower than the refractive index of the organic layers (which is typically smaller than about 1.8 - 2.0) and therefore preferably ranges between about 1.3 and about 1.7. In this case the outcoupling efficiency can be optimized.
  • the low- index material may preferably comprise at least one the following materials: Si0 2 (silicon dioxide), A1F 3 , A1 2 0 3 , BaF 2 , CaF 2 , CeF 3 , CsF, DyF 3 , ErF 3 , GdF 3 , HfF 2 , HoF 3 , LaF 3 , LiF, MgF 2 , Na 3 AlF 6 , Na 5 Al 3 Fi 4 , NaF, NdF 3 , PrF 3 , ScF 3 , SrF 2 , YF 3 , YbF 3 , ZrF 4 , amorphous fluoropolymers (e.g. available as Teflon AF® series from DuPont), transparent low k dielectrics (e.g. available as Cyclotene® from Dow Chemical).
  • Si0 2 silicon dioxide
  • A1F 3 A1 2 0 3
  • BaF 2 CaF 2
  • CeF 3 CeF 3
  • CsF DyF 3
  • the first electrode layer may preferably be disposed on a substrate layer.
  • the substrate may comprise any flexible or rigid material that is suited as a carrier of the subsequent components.
  • the substrate will be transparent and for example consist of plastic or glass.
  • FIGS 1-8 illustrate consecutive steps of the manufacturing of an OLED
  • Figures 9 and 10 illustrate consecutive steps of the manufacturing of an OLED device according to a spraying process.
  • Si0 2 approximately 1 ⁇ and a pitch in the order of 5 ⁇ . It is fabricated by depositing Si0 2 first by PECVD and patterning by conventional photolithography (using positive resist, exposure, hard bake, and dissolving the photoresist, thus opening the area in which Si0 2 is chemically etched). This is a relative costly procedure.
  • low-index structures can be produced by spraying a suitable polymer solution and/or a precursor aerosol for a sol-gel polymerization.
  • Figure 1 shows in a side view the provision of a glass substrate 1 on which a first electrode layer 2 (anode) is deposited.
  • the electrode layer typically consists of ITO.
  • the subsequent structuring of the photoresist layer 10 may be done in two alternative ways.
  • the first alternative is illustrated in Figure 3a and comprises the
  • FIG. 3b The second alternative is illustrated in Figure 3b.
  • a positive photoresist with embedded opaque particles 11 is used.
  • the opaque particles 11 shadow the photoresist material beneath them.
  • the particles 11 and the exposed material between and above them can be removed.
  • Figure 4 shows the stack of layers with the opened photoresist layer 10', i.e. after the removal of the exposed photoresist material (the Figure particularly continues the example of Figure 3a; in case of Figure 3b, the top surfaces of the photoresist-remainders would be more irregular).
  • the opened photoresist layer 10' now comprises a pattern of holes 12.
  • a layer of Si0 2 has been deposited, creating islands 3 of Si0 2 in the holes of the photoresist layer 10' and depositions 3' of Si0 2 on the lands of photoresist material.
  • the islands 3 may typically have a thickness of approximately 100 nm.
  • the polymer may be solved in a fluorocarbon-based electronics coolant liquid (e.g. Fluoroinert® FC-72, 77, 75 from 3M; Flutec® PP2, 6, 50 from Rhone-Poulenc; Galden® HT 10, HT 35 from Ausimont).
  • a fluorocarbon-based electronics coolant liquid e.g. Fluoroinert® FC-72, 77, 75 from 3M; Flutec® PP2, 6, 50 from Rhone-Poulenc; Galden® HT 10, HT 35 from Ausimont).
  • the aerosol particles 13 may be precursors for a sol-gel polymerization. They may for example consist of acidid solutions comprising tetraethyl orthosilicate (TEOS : ethanol : water : HC1).
  • TEOS tetraethyl orthosilicate
  • Figure 10 shows the setup after (at least some of) the particles of the aerosol have settled upon the electrode layer 2 and have been cured.
  • the curing may for instance comprise heating to temperatures above 80° C, at which the precursor material transforms to Si0 2 with a low index of refraction of 1.4. Further processing of the device may be done as explained with respect to

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention porte sur un dispositif électroluminescent organique (DELO) (100) et sur son procédé de fabrication, ledit dispositif DELO (100) comprenant une première couche d'électrode (2), une couche électroluminescente organique (4) et une seconde couche d'électrode (5). En outre, un matériau à faible indice (3) est agencé sur la première couche d'électrode (2) et incorporé dans la couche électroluminescente organique (4). Le matériau à faible indice (3) peut en particulier comprendre SiO2 et être agencé selon un motif régulier ou irrégulier, de préférence selon un motif d'îlots (3).
PCT/IB2010/053873 2009-09-04 2010-08-30 Dispositif delo à matériau à faible indice Ceased WO2011027276A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP09169467.9 2009-09-04
EP09169467 2009-09-04

Publications (1)

Publication Number Publication Date
WO2011027276A1 true WO2011027276A1 (fr) 2011-03-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2010/053873 Ceased WO2011027276A1 (fr) 2009-09-04 2010-08-30 Dispositif delo à matériau à faible indice

Country Status (2)

Country Link
TW (1) TW201119486A (fr)
WO (1) WO2011027276A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160072858A (ko) * 2014-12-15 2016-06-24 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
US11985841B2 (en) 2020-12-07 2024-05-14 Oti Lumionics Inc. Patterning a conductive deposited layer using a nucleation inhibiting coating and an underlying metallic coating
US12113279B2 (en) 2020-09-22 2024-10-08 Oti Lumionics Inc. Device incorporating an IR signal transmissive region

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI643524B (zh) * 2017-10-03 2018-12-01 王欽戊 Asymmetric structure electroluminescent element with photothermal separation technology

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040188690A1 (en) * 2003-03-26 2004-09-30 Fuji Photo Film Co., Ltd. Light emitting diode
GB2400235A (en) * 2003-04-03 2004-10-06 Qinetiq Ltd Optoelectronic device
US20080265757A1 (en) 2007-03-30 2008-10-30 Stephen Forrest Low Index Grids (LIG) To Increase Outcoupled Light From Top or Transparent OLED

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040188690A1 (en) * 2003-03-26 2004-09-30 Fuji Photo Film Co., Ltd. Light emitting diode
GB2400235A (en) * 2003-04-03 2004-10-06 Qinetiq Ltd Optoelectronic device
US20080265757A1 (en) 2007-03-30 2008-10-30 Stephen Forrest Low Index Grids (LIG) To Increase Outcoupled Light From Top or Transparent OLED

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
KLAUS MUELLEN, ULLRICH SCHERF: "Organic Light Emitting Devices: Synthesis, Properties and Applications", 2006, JOHN WILEY & SONS
NATURE PHOTONICS, vol. 2, 2008, pages 483
SHINAR, JOSEPH: "Organic Light-Emitting Devices: A Survey", 2004, SPRINGER-VERLAG
YIRU SUN, STEPHEN R. FORREST: "Enhanced light out-coupling of organic light-emitting devices using embedded low-index grids", NATURE PHOTONICS, vol. 2, 11 July 2008 (2008-07-11), pages 483 - 487, XP002608855 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160072858A (ko) * 2014-12-15 2016-06-24 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
KR102577984B1 (ko) * 2014-12-15 2023-09-13 엘지디스플레이 주식회사 유기전계발광표시장치 및 그 제조방법
US12113279B2 (en) 2020-09-22 2024-10-08 Oti Lumionics Inc. Device incorporating an IR signal transmissive region
US11985841B2 (en) 2020-12-07 2024-05-14 Oti Lumionics Inc. Patterning a conductive deposited layer using a nucleation inhibiting coating and an underlying metallic coating

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