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WO2011025241A2 - Bonding wire antenna communication module - Google Patents

Bonding wire antenna communication module Download PDF

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Publication number
WO2011025241A2
WO2011025241A2 PCT/KR2010/005668 KR2010005668W WO2011025241A2 WO 2011025241 A2 WO2011025241 A2 WO 2011025241A2 KR 2010005668 W KR2010005668 W KR 2010005668W WO 2011025241 A2 WO2011025241 A2 WO 2011025241A2
Authority
WO
WIPO (PCT)
Prior art keywords
bonding wire
semiconductor chip
amplifiers
communication module
antennas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/005668
Other languages
French (fr)
Korean (ko)
Other versions
WO2011025241A3 (en
Inventor
๊น€ํƒœ์šฑ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industry Academic Cooperation Foundation of Yonsei University
Original Assignee
Industry Academic Cooperation Foundation of Yonsei University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090079220A external-priority patent/KR20110021427A/en
Priority claimed from KR1020090079208A external-priority patent/KR101133146B1/en
Priority claimed from KR1020100007502A external-priority patent/KR101129553B1/en
Application filed by Industry Academic Cooperation Foundation of Yonsei University filed Critical Industry Academic Cooperation Foundation of Yonsei University
Publication of WO2011025241A2 publication Critical patent/WO2011025241A2/en
Publication of WO2011025241A3 publication Critical patent/WO2011025241A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
    • H10W44/20—
    • H10W72/30—
    • H10W90/00—
    • H10W20/20—
    • H10W44/206—
    • H10W44/248—
    • H10W70/60—
    • H10W72/251—
    • H10W72/29—
    • H10W72/50—
    • H10W72/5445—
    • H10W72/5453—
    • H10W72/5473—
    • H10W72/879—
    • H10W72/884—
    • H10W72/932—
    • H10W72/942—
    • H10W74/15—
    • H10W90/297—
    • H10W90/722—
    • H10W90/724—
    • H10W90/732—
    • H10W90/734—
    • H10W90/754—
    • H10W99/00—

Definitions

  • An embodiment of the present invention relates to a communication module.
  • the quality, security, reliability, and high speed transmission rate of a communication service may depend on a communication module.
  • the antenna in the communication module is the main component that determines the quality of the communication system.
  • the demand for a communication module having an excellent antenna is increasing.
  • a communication module optimized for high integration and high efficiency for building a wireless network between portable devices and other electronic devices has been in the spotlight.
  • One object of the present invention is to provide a communication module having a small antenna.
  • Another object of the present invention is to provide a communication module optimized for high efficiency.
  • Another technical problem to be achieved by the present invention is to provide a communication module that can be produced at a low price.
  • the bonding wire antenna communication module is electrically connected to a substrate, a semiconductor chip on the substrate, a plurality of bonding pads on the semiconductor chip, and the plurality of bonding pads, and transmit and receive signals. It includes.
  • the semiconductor chip may include a plurality of amplifiers electrically connected to the bonding pads.
  • the plurality of amplifiers may include at least one of a power amplifier and a low noise amplifier.
  • At least one of the plurality of amplifiers may be provided using a CMOS process.
  • the semiconductor chip may include a transceiver connected to the plurality of amplifiers.
  • the bonding wire antennas are spaced apart at regular intervals, and each of the signals input from the transceiver to the plurality of amplifiers has a phase difference, and the plurality of bonding wire antennas are beamforming. Can be used).
  • it may further include a switch connecting the plurality of amplifiers and the transceiver.
  • the switch may comprise a transistor.
  • the plurality of bonding wire antennas can output signals having the same phase.
  • output signals output from the plurality of bonding wire antennas may constitute one wide area signal.
  • whether to operate each of the plurality of amplifiers can be adjusted according to the output power of the wide area signal.
  • the bonding wire antenna communication module further includes connection pads disposed on the substrate, and the plurality of bonding wire antennas may be connected to the connection pads.
  • the lengths of the plurality of moving wire antennas may be substantially the same.
  • the length of the plurality of bonding wire antennas may be 0.8 mm to 1 mm.
  • the plurality of bonding wire antenna may be provided in the same process as the bonding wire.
  • the semiconductor substrate may further include additional semiconductor chips interposed between the substrate and the semiconductor chip.
  • a bonding wire antenna communication module includes a semiconductor chip including a substrate, a plurality of amplifiers on the substrate, and a transceiver connected to the plurality of amplifiers, a first bonding pad on the semiconductor chip, and the plurality of amplifiers. And a plurality of bonding wire antennas connected to each other, a bonding wire electrically connected to the first bonding pads, and a plurality of bonding wire antennas electrically connected to the plurality of second bonding pads and transmitting and receiving signals.
  • a communication module includes a substrate, a semiconductor chip disposed on the substrate, the semiconductor chip including a plurality of amplifiers and a transceiver, a plurality of bonding pads on the semiconductor chip, and a plurality of bonding pads. And a plurality of bonding wire antennas respectively outputting output signals, wherein the output signals constitute one wide area signal, and whether each of the plurality of amplifiers is operated according to the output power of the wide area signal.
  • the monopole bonding wire antenna communication module includes a substrate, a semiconductor chip on the substrate, a bonding pad on the semiconductor chip, and a bonding wire antenna electrically connected to the bonding pad and transmitting and receiving a signal.
  • the semiconductor chip may include an amplifier electrically connected to the bonding pad.
  • the amplifier may include at least one of a power amplifier and a low noise amplifier.
  • the semiconductor chip may include a transceiver connected to the amplifier.
  • the monopole bonding wire antenna communication module may further include a switch connecting the amplifier and the transceiver.
  • the switch may include a transistor.
  • the monopole bonding wire antenna communication module further includes connection pads disposed on the substrate, and the bonding wire antennas may be connected to the connection pads.
  • the length of the bonding wire antenna may vary depending on a frequency used in the bonding wire antenna communication module.
  • the length of the bonding wire antenna may be 0.8 mm to 1.5 mm.
  • the monopole bonding wire antenna communication module further includes a bonding wire electrically connected to the bonding pad, and the bonding wire antenna may be provided in the same process as the bonding wire.
  • the monopole bonding wire antenna communication module may further include additional semiconductor chips interposed between the substrate and the semiconductor chip.
  • the monopole bonding wire antenna communication module may further include a bump disposed between the semiconductor chip and the substrate.
  • the monopole bonding wire antenna communication module may adjust a direction of a signal transmitted from the bonding wire antenna according to the shape of the bonding wire antenna.
  • a communication module includes a substrate, a plurality of semiconductor chips on the substrate, a plurality of bonding pads on the plurality of semiconductor chips, and a plurality of bonding electrically connected to the plurality of bonding pads and transmitting and receiving signals. And a wire antenna.
  • the plurality of semiconductor chips may include a plurality of amplifiers electrically connected to the plurality of bonding pads, and at least one amplifier may be provided using a CMOS process.
  • the plurality of semiconductor chips may include a plurality of transceivers connected to the plurality of amplifiers.
  • each of the signals input from the plurality of transceivers to the plurality of amplifiers has a phase difference
  • the plurality of bonding wire antennas may be used for beamforming.
  • the plurality of bonding wire antennas may output signals having the same phase.
  • the output signals output from the plurality of bonding wire antennas may constitute one wide area signal.
  • whether each of the plurality of amplifiers is operated may be adjusted according to the output power of the wide area signal.
  • the lengths of the plurality of bonding wire antennas may be substantially the same.
  • a monopole bonding wire antenna communication module is a substrate, a semiconductor chip disposed on the substrate, including a plurality of amplifiers and transceivers, a plurality of bonding pads on the semiconductor chip, the plurality of bonding pads And a plurality of bonding wire antennas electrically connected to and outputting the output signals, respectively, wherein the output signals constitute one wide area signal, and whether each of the plurality of amplifiers is operated according to the output power of the wide area signal. Controlled.
  • the communication module includes a semiconductor chip and a plurality of antennas spaced apart from each other and transmitting and receiving signals.
  • one end and the other end of each of the plurality of antennas may be connected to the semiconductor chip, respectively, and at least some of the portions except for the one end and the other end of each of the plurality of antennas may be spaced apart from the semiconductor chip. .
  • the semiconductor chip may further include a plurality of amplifiers electrically connected to the ends of the plurality of antennas, respectively.
  • the plurality of amplifiers may include at least one of a power amplifier and a low noise amplifier.
  • At least one of the plurality of amplifiers may be provided using a CMOS process.
  • the semiconductor chip may further include a transceiver connected to the plurality of amplifiers.
  • the plurality of antennas are spaced apart from each other at regular intervals, and each of the signals input from the transceiver to the plurality of amplifiers has a phase difference, and the plurality of antennas are formed by beamforming.
  • In this embodiment may further include a switch element for connecting the plurality of amplifiers and the transceiver.
  • the plurality of antennas may output a signal having the same phase.
  • the signals output from the plurality of antennas may constitute one wide area signal.
  • whether each of the plurality of amplifiers is operated may be adjusted according to the output power of the wide area signal.
  • the antenna may have a length of 0.8 mm to 1 mm.
  • the communication module may further include a bonding pad disposed on the semiconductor chip, a substrate on which the semiconductor chip is disposed, a connection pad on the substrate, and a bonding wire connecting the bonding pad and the connection pad.
  • a communication module includes a substrate on which the semiconductor chip is disposed, a connection pad connected to the substrate, a connection pad disposed between the semiconductor chip and the substrate, the semiconductor chip, The device may further include a via contact plug that electrically connects the connection pad.
  • the communication module may further include a plurality of additional semiconductor chips disposed between the substrate and the semiconductor chip, wherein the via contact plug may further penetrate the additional semiconductor chip.
  • the communication module includes a semiconductor chip including a transceiver and a plurality of amplifiers connected to the transceiver and a plurality of antennas disposed on the semiconductor chip and outputting signals, respectively; One ends of are respectively connected to the plurality of amplifiers, at least some of the portions except for the one end of each of the plurality of antennas are spaced apart from the semiconductor chip, and the output signals constitute one wide area signal.
  • the plurality of amplifiers are power amplifiers, and at least one of the power amplifiers may be provided using a CMOS process.
  • whether each of the power amplifiers is operated may be controlled according to the output power of the wide area signal.
  • a plurality of bonding wire antennas and amplifiers are disposed on a semiconductor chip, and each of the low cost CMOS implemented amplifiers can operate at maximum output, which is optimized for high efficiency, high integration, and low cost.
  • a communication module can be provided.
  • a plurality of antennas and amplifiers are disposed on a semiconductor chip, and signals output from each antenna may constitute one wide area signal, and thus the amplifiers may be implemented in CMOS.
  • each of the amplifiers can operate at maximum output, providing a communication module optimized for high efficiency, high integration and low cost.
  • FIG. 1 is a perspective view illustrating a bonding wire antenna communication module according to an exemplary embodiment of the present invention.
  • FIG. 2 is a cross-sectional view illustrating a bonding wire antenna communication module according to an exemplary embodiment of the present invention.
  • FIG. 3 is a plan view illustrating a bonding wire antenna communication module according to an exemplary embodiment.
  • FIG. 4 is a cross-sectional view illustrating a bonding wire antenna communication module according to another modified example of the embodiment of the present invention.
  • FIG. 5 is a perspective view illustrating a bonding wire antenna communication module according to another exemplary embodiment of the present disclosure.
  • FIG. 6 is a cross-sectional view illustrating a bonding wire antenna communication module according to another exemplary embodiment of the present invention.
  • FIG. 7 is a diagram for describing application examples according to example embodiments.
  • FIG. 8 is a perspective view illustrating a monopole bonding wire communication module according to an embodiment of the present invention.
  • FIG. 9 is a cross-sectional view for describing a monopole bonding wire communication module according to an embodiment of the present invention.
  • FIG. 10 is a plan view illustrating a monopole bonding wire communication module according to an embodiment of the present invention.
  • FIG. 11 is a cross-sectional view illustrating a monopole bonding wire communication module according to another modified example of the embodiment of the present invention.
  • FIG. 12 is a perspective view illustrating a monopole bonding wire communication module according to another embodiment of the present invention.
  • FIG. 13 is a cross-sectional view illustrating a monopole bonding wire communication module according to another embodiment of the present invention.
  • FIG. 14 is a perspective view illustrating a monopole bonding wire communication module according to another embodiment of the present invention.
  • 15 is a plan view illustrating a monopole bonding wire communication module according to another embodiment of the present invention.
  • 16 and 17 are graphs illustrating simulation results of a monopole bonding wire communication module according to embodiments of the present invention.
  • FIG. 18 is a diagram for describing a communication module according to one embodiment of the present invention.
  • 19 and 20 are diagrams for describing a communication module according to another embodiment of the present invention.
  • 21 and 22 are diagrams for describing a communication module according to another exemplary embodiment of the present invention.
  • 23 and 24 are diagrams for describing a communication module according to another example of the present invention.
  • a bonding wire communication module according to an embodiment of the present invention is described.
  • FIG. 1 is a perspective view illustrating a bonding wire communication module according to an embodiment of the present invention
  • FIG. 2 is a cross-sectional view taken along line II โ€ฒ of FIG. 1
  • FIG. 3 is a plan view of FIG. 1.
  • a substrate 100 is provided.
  • the substrate 100 may be a substrate for a package.
  • An insulating material 134 may be disposed under the substrate 100.
  • the junction electrode 136 may be disposed under the substrate 100.
  • Solder balls 138 connected to the junction electrode 136 may be disposed under the substrate 100.
  • the semiconductor chip 200 may be disposed on the substrate 100.
  • An adhesive pad 130 may be interposed between the semiconductor chip 200 and the substrate 100.
  • the adhesive pad 130 may include a conductive material. In this case, the adhesive pad 130 may be used for connection with the ground. In contrast, the adhesive pad 130 may be an insulating material.
  • An adhesive material 132 may be interposed between the adhesive pad 130 and the semiconductor chip 200.
  • the semiconductor chip 200 may be fixed on the substrate 100 by the adhesive material 132.
  • the semiconductor chip 200 may be mounted in a ball grid array package structure on the substrate 100.
  • the semiconductor chip 200 may include an integrated circuit.
  • First connection pads 110 and second connection pads 120 may be disposed on the substrate 100.
  • the first connection pads 110 and the second connection pads 120 may include the same material having conductivity.
  • the first connection pads 110 and the second connection pads 120 may include other materials.
  • the second connection pads 120 may include an insulating material.
  • the second connection pads 120 may be electrically insulated from the substrate 100.
  • First bonding pads 240 and second bonding pads 245 may be disposed on the semiconductor chip 200.
  • the bonding pads 240 and 245 may be disposed at edges of the semiconductor chip 200.
  • the bonding pads 240 and 245 may be spaced apart at regular intervals.
  • the bonding pads 240 and 245 may include a conductive material.
  • Bonding wires 260 electrically connected to the first bonding pads 240 may be disposed on the substrate 100.
  • the bonding wires 260 may be electrically connected to the first connection pad 110.
  • the first connection pad 110 may be electrically connected to the solder ball 138.
  • the bonding wires 260 may electrically connect the integrated circuit of the semiconductor chip 200 and the substrate 100.
  • a plurality of bonding wire antennas 250 electrically connected to the second bonding pads 245 may be disposed on the substrate 100.
  • the bonding wire antennas 250 may be used as antennas of a communication module.
  • the bonding wire antennas 250 may be connected to the second connection pad 120. Unlike the drawing, the bonding wire antennas 250 may not be connected to the second connection pad 120.
  • the length of the bonding wire antennas 250 may be substantially the same.
  • the length of the bonding wire antenna 250 may be 0.8mm โ‡ 1mm.
  • the bonding wire antennas 250 may transmit and receive signals. In general, the length of the antenna may be โ‡ / 4 ( โ‡ : wavelength).
  • the communication module when the length of the bonding wire antenna 250 is 0.8mm โ‡ 1mm, the communication module according to an embodiment of the present invention can be used in a communication system using a frequency of 60GHz or 77GHz band.
  • the bonding wire antennas 250 may be provided in the same process as the bonding wire 260.
  • bonding wire antennas 250 Although four bonding wire antennas 250 are shown in the figure, two to three or more bonding wire antennas may be disposed. Although the bonding wire antennas 250 are disposed on one side of the semiconductor chip 200, bonding wire antennas may be disposed on each side of the semiconductor chip 200.
  • the semiconductor chip 200 may include a plurality of amplifiers 230.
  • the amplifiers 230 may include at least one of a power amplifier and a low noise amplifier.
  • the power amplifier may be used for the bonding wire antennas 250 to transmit a signal.
  • the low noise amplifier may be used for the bonding wire antennas 250 to receive a signal.
  • At least one of the amplifiers 230 may be provided using a CMOS process.
  • the semiconductor chip 200 may include a transceiver 210.
  • the transceiver 210 may be electrically connected to the amplifiers 230.
  • Switches 220 may be disposed between the amplifiers 230 and the transceiver 210.
  • the switches 220 may include transistors.
  • Signals may be input from the transceiver 210 to the amplifiers 230.
  • the signals input to the amplifiers 230 may be output from the bonding wire antennas 250 via the second bonding pads 245.
  • the amplifiers 230 may be power amplifiers PA.
  • Output signals 10, 20, 30, and 40 may be output from the bonding wire antenna 250.
  • the phase of the signal input from the transceiver 210 to the amplifiers 230 may be the same so that the output signals 10, 20, 30, and 40 have the same phase. As the output signals 10, 20, 30, and 40 have the same phase, the output signals 10, 20, 30, and 40 may constructively interfere with each other.
  • the output signals 10, 20, 30, and 40 are combined to form one wide area signal.
  • the reliability of the amplifier may be degraded due to the constraint of the output power of the amplifier.
  • the output power that can be used with reliability may be about 10 dBm due to constraints such as a hot carrier effect. Accordingly, there is a limitation that amplifiers provided using CMOS processes cannot be used in communication systems that require output powers of around 30 dBm. Accordingly, in a communication system requiring an output power of about 30 dBm, an amplifier implemented with a compound semiconductor has been used.
  • the plurality of bonding wire antennas 250 output the output signals 10, 20, 30, and 40 each having the same phase to form one wide area signal.
  • Each of the output powers of the amplifiers 230 may be smaller than the case where one amplifier is disposed on the semiconductor chip 200.
  • the semiconductor chip 200 includes six amplifiers provided by using a CMOS process having an output power of 10 dBm
  • the output signals of 10 dBm output by each amplifier are about 28 dBm high power wide area signals.
  • the amplifiers 230 may be implemented as a compound semiconductor, as well as inexpensive CMOS, a low-cost bonding wire antenna communication module can be provided.
  • the amplifier when designing an amplifier included in the communication module, the amplifier is designed to have an output power corresponding to the maximum output power of the communication module. Accordingly, when the communication module operates at a lower output power than the maximum output power, the efficiency of the amplifier may be lowered due to the characteristics of the amplifier having the highest efficiency at the maximum output power.
  • the switch 220 for connecting the transceiver 210 and the amplifier 230 is disposed on the semiconductor chip 200, the operation of each of the amplifier 230 is controlled Can be. Thus, depending on the strength of the output of the wide area signal required, the operation of the amplifiers 230 may be adjusted by the switch 220.
  • each of the amplifiers it is possible to implement the maximum output power of the output signal required by the communication module, even if the communication module operates at an output power lower than the maximum output power, each amplifier is the maximum It can operate with output power of.
  • the semiconductor chip 200 includes eight amplifiers, six of the eight amplifiers.
  • Amplifiers operate at 10dBm, capable of outputting a wide range signal of 28dBm.
  • the amplifiers 230 may operate at maximum output power. Accordingly, the amplifiers operating among the plurality of amplifiers can operate at the highest efficiency, and thus a communication module optimized for high efficiency can be provided.
  • Signals may be received through the bonding wire antennas 250.
  • Signals received by the bonding wire antennas 250 may be input to the transceiver 210 through the amplifiers 230.
  • the amplifiers 230 may be low noise amplifiers (LNAs).
  • a bonding wire communication module according to a variation of an embodiment of the present invention is described.
  • the bonding wire antennas 250 may be spaced apart at regular intervals.
  • the bonding wire antennas 250 may be spaced at regular intervals with an interval of โ‡ / 2 ( โ‡ : wavelength of a communication frequency in which the present invention is used).
  • functional blocks may be provided to delay a signal through a phase shift and overlap the delayed signals.
  • the phases of the signals input to the amplifiers 230 from the transceiver 210 may be different.
  • Signals input to the amplifiers 230 may each have a constant phase difference.
  • Phases of the output signals 10, 20, 30, and 40 of the bonding wire antennas 250 may have a predetermined difference.
  • the output signals 10, 20, 30, and 40 may each have a phase difference of 45 ยฐ.
  • the bonding wire antennas 250 may be used for beamforming.
  • a bonding wire communication module according to another modification of an embodiment of the present invention is described.
  • FIG. 4 is a cross-sectional view illustrating a bonding wire communication module according to another modified example of the embodiment of the present invention.
  • symbol of FIG. 2 corresponds to the same structure.
  • conductive pads 124 may be disposed below the semiconductor chip 200 and above the substrate 100.
  • Bumps 126 may be disposed between the conductive pads 124 of the semiconductor chip 200 and the conductive pads 124 of the substrate 100.
  • the space between the substrate 100 and the semiconductor chip 200 may be filled with an underfill 122.
  • the underfill 122 may include an epoxy.
  • the integrated circuit of the semiconductor chip 200 may be electrically connected to the substrate 100 through the conductive pads 124 and the bump 126.
  • bonding wires may be omitted.
  • a plurality of bonding wire antennas 250 may be connected to the bonding pads 240 disposed on the semiconductor chip 200, respectively.
  • the plurality of bonding wire antennas 250 may be connected to a transceiver and amplifiers of the semiconductor chip 200 to transmit and receive a signal.
  • a bonding wire communication module according to another embodiment of the present invention is described.
  • FIG. 5 is a perspective view illustrating a bonding wire communication module according to another embodiment of the present invention.
  • 6 is a cross-sectional view taken along line II-II 'of FIG. 5 to describe another bonding wire communication module according to another embodiment of the present invention.
  • symbol of FIG. 1 corresponds to the same structure.
  • Another embodiment of the present invention is a case in which a communication module according to an embodiment of the present invention is applied to a package structure in which a plurality of chips are stacked.
  • additional semiconductor chips 300 and 400 may be interposed between the substrate 100 and the semiconductor chip 200.
  • An adhesive material 132 may be interposed between the semiconductor chip 200 and the first additional semiconductor chip 300.
  • a first additional adhesive material 340 may be interposed between the first additional semiconductor chip 300 and the second additional semiconductor chip 400.
  • a second additional adhesive material 440 may be interposed between the second additional semiconductor chip 400 and the insulating layer 130.
  • Bonding pads 240, 245, 340, and 440 may be disposed on the semiconductor chips 200, 300, and 400.
  • the bonding pads 240, 245, 340, and 440 may be disposed at edges of the semiconductor chips 200, 300, and 400.
  • Additional bonding wires 360 and 460 electrically connected to the additional bonding pads 340 and 440 disposed on the additional semiconductor chips 300 and 400 may be disposed.
  • the additional bonding wires 360 and 460 may be connected to the connection pads 110 and 120.
  • the additional bonding wires 360 and 460 may electrically connect the additional semiconductor chips 300 and 400 and the substrate 100.
  • the length of the bonding wire antennas 250 may be longer than in the case where the additional semiconductor chips 300 and 400 are not interposed between the semiconductor chip 200 and the substrate 100.
  • the communication module according to another embodiment of the present invention may be used in a communication system of a lower frequency band than a communication system of a frequency band in which the communication module according to an embodiment of the present invention is used.
  • some of the additional bonding wires 360 and 460 connected to the additional semiconductor chips 300 and 400 may be used as the bonding wire antennas.
  • FIG. 7 is a view for explaining an application example embodiments of the present invention.
  • a mobile phone 1100, an MP3 player 1200, a camera 1300, a DVD 1400, a TV 1500, a PC 1600, a speaker 1700, and the like may be used.
  • Modules may be included. Since the electronic devices listed above include a communication module according to embodiments of the present invention, a wireless network may be established between each electronic device.
  • the mobile phone 1100 and the TV 1500 include a communication module according to embodiments of the present invention, so that a large data file (for example, between the mobile phone 1100 and the TV 1500) is provided. , Video files) can be exchanged wirelessly.
  • image files may be exchanged between the camera 1300 and the PC 1600, and a sound file may be exchanged between the speaker 1700 and the MP3 player 1200, so that the MP3 may be exchanged. Sound inherent in the player 1200 may be output through the speaker 1700.
  • the communication module according to the embodiments of the present invention may be optimized for high integration and high efficiency, and may be actively used in portable electronic devices such as the mobile phone 1100 and the MP3 player 1200.
  • a monopole bonding wire communication module according to an embodiment of the present invention is described.
  • FIG. 8 is a perspective view illustrating a monopole bonding wire communication module according to an embodiment of the present invention
  • FIG. 9 is a line II โ€ฒ of FIG. 8 illustrating a monopole bonding wire communication module according to an embodiment of the present invention
  • 10 is a cross-sectional view taken along the line
  • FIG. 10 is a plan view illustrating a monopole bonding wire communication module according to an exemplary embodiment of the present invention.
  • the substrate 100 may be a substrate for a package.
  • An insulating material 134 may be disposed under the substrate 100.
  • the junction electrode 136 may be disposed under the substrate 100.
  • Solder balls 138 connected to the junction electrode 136 may be disposed under the substrate 100.
  • the semiconductor chip 200 may be disposed on the substrate 100.
  • An adhesive pad 130 may be interposed between the semiconductor chip 200 and the substrate 100.
  • the adhesive pad 130 may include a conductive material. In this case, the adhesive pad 130 may be used for connection with the ground. In contrast, the adhesive pad 130 may be an insulating material.
  • An adhesive material 132 may be interposed between the adhesive pad 130 and the semiconductor chip 200.
  • the semiconductor chip 200 may be fixed on the substrate 100 by the adhesive material 132.
  • the semiconductor chip 200 may be mounted in a ball grid array package structure on the substrate 100.
  • the semiconductor chip 200 may include an integrated circuit.
  • First connection pads 110 and second connection pads 120 may be disposed on the substrate 100.
  • the first connection pads 110 and the second connection pads 120 may include the same material having conductivity.
  • the first connection pads 110 and the second connection pads 120 may include other materials.
  • the first connection pads 110 may include an insulating material.
  • the first connection pads 110 may be electrically insulated from the substrate 100.
  • First bonding pads 240 and second bonding pads 245 may be disposed on the semiconductor chip 200.
  • the bonding pads 240 and 245 may be disposed at edges of the semiconductor chip 200.
  • the bonding pads 240 and 245 may be spaced apart at regular intervals.
  • the bonding pads 240 and 245 may include a conductive material.
  • Bonding wires 260 electrically connected to the first bonding pads 240 may be disposed on the substrate 100.
  • the bonding wires 260 may be electrically connected to the first connection pad 110.
  • the first connection pad 110 may be electrically connected to the solder ball 138.
  • the bonding wires 260 may electrically connect the integrated circuit of the semiconductor chip 200 and the substrate 100.
  • a plurality of bonding wire antennas 250 electrically connected to the second bonding pads 245 may be disposed on the substrate 100.
  • the bonding wire antennas 250 may be used as antennas of a communication module.
  • the bonding wire antennas 250 may be connected to the second connection pad 120. Unlike the drawing, the bonding wire antennas 250 may not be connected to the second connection pad 120.
  • the bonding wire antennas 250 may transmit and receive signals.
  • the bonding wire antennas 250 may be provided in the same process as the bonding wire 260.
  • the length of the bonding wire antenna 250 may vary depending on the wavelength of the signal used. In general, the length of the antenna may be โ‡ / 4 ( โ‡ : wavelength). For example, when the communication module uses a frequency of 60GHz band, the wavelength of the signal is 5mm, so the length of the bonding wire antenna may be 1.25mm, and when the communication module uses the frequency of 77GHz band, the wavelength of the signal Since 3.9mm, the length of the bonding wire antenna 250 may be 0.97mm.
  • the length of the bonding wire antennas 250 may be substantially the same.
  • the bonding wire antenna 250 may have a length of about 0.8 mm to about 1.5 mm.
  • the semiconductor chip 200 may include an amplifier 230.
  • the amplifier 230 may include any one of a power amplifier and a low noise amplifier.
  • the power amplifier may be used for the bonding wire antenna 250 to transmit a signal.
  • the low noise amplifier may be used by the bonding wire antenna 250 to receive a signal.
  • the semiconductor chip 200 may include a transceiver 210.
  • the transceiver 210 may be electrically connected to the amplifiers 230.
  • a switch 220 may be disposed between the amplifiers 230 and the transceiver 210.
  • the switch 220 may include a transistor.
  • Signals may be input from the transceiver 210 to the amplifier 230.
  • the signals input to the amplifier 230 may be output from the bonding wire antenna 250 via the second bonding pad 245.
  • the amplifiers 230 may be power amplifiers PA.
  • the output signal 10 may be output from the bonding wire antenna 250. According to the direction of the bonding wire antenna 250, the output direction of the output signal 10 can be adjusted.
  • Signals may be received through the bonding wire antenna 250.
  • the signal received by the bonding wire antenna 250 may be input to the transceiver 210 via the amplifier 230.
  • the amplifier 230 may be a low noise amplifier (LNA).
  • a micro-antenna may be implemented without developing a separate manufacturing process.
  • a monopole bonding wire antenna communication module which is inexpensive and includes an ultra-small antenna and is optimized for a highly integrated communication module that can be utilized in various communication systems and electronic devices including a wireless network, may be provided.
  • a monopole bonding wire communication module according to a variation of an embodiment of the present invention is described.
  • FIG. 11 is a cross-sectional view illustrating a monopole bonding wire communication module according to another modified example of the embodiment of the present invention.
  • symbol of FIG. 9 corresponds to the same structure.
  • conductive pads 124 may be disposed below the semiconductor chip 200 and above the substrate 100.
  • Bumps 126 may be disposed between the conductive pads 124 of the semiconductor chip 200 and the conductive pads 124 of the substrate 100.
  • the space between the substrate 100 and the semiconductor chip 200 may be filled with an underfill 122.
  • the underfill 122 may include an epoxy.
  • the integrated circuit of the semiconductor chip 200 may be electrically connected to the substrate 100 through the conductive pads 124 and the bump 126.
  • a bonding wire antenna 250 may be connected to the second bonding pad 245 disposed on the semiconductor chip 200.
  • the bonding wire antenna 250 may be connected to a transceiver and an amplifier of the semiconductor chip 200 to transmit and receive a signal.
  • a monopole bonding wire communication module according to another embodiment of the present invention is described.
  • FIG. 12 is a perspective view illustrating a communication module according to another embodiment of the present invention.
  • FIG. 13 is a cross-sectional view taken along line II-II 'of FIG. 12 to describe another communication module according to another embodiment of the present invention.
  • symbol of FIG. 8 corresponds to the same structure.
  • symbol of FIG. 8 corresponds to the same structure.
  • Another embodiment of the present invention is a case in which a communication module according to an embodiment of the present invention is applied to a package structure in which a plurality of chips are stacked.
  • additional semiconductor chips 300 and 400 may be interposed between the substrate 100 and the semiconductor chip 200.
  • An adhesive material 132 may be interposed between the semiconductor chip 200 and the first additional semiconductor chip 300.
  • a first additional adhesive material 340 may be interposed between the first additional semiconductor chip 300 and the second additional semiconductor chip 400.
  • a second additional adhesive material 440 may be interposed between the second additional semiconductor chip 400 and the insulating layer 130.
  • Bonding pads 240, 245, 340, and 440 may be disposed on the semiconductor chips 200, 300, and 400.
  • the bonding pads 240, 245, 340, and 440 may be disposed at edges of the semiconductor chips 200, 300, and 400.
  • Additional bonding wires 360 and 460 electrically connected to the additional bonding pads 340 and 440 disposed on the additional semiconductor chips 300 and 400 may be disposed.
  • the additional bonding wires 360 and 460 may be connected to the connection pads 110 and 120.
  • the additional bonding wires 360 and 460 may electrically connect the additional semiconductor chips 300 and 400 and the substrate 100.
  • the length of the bonding wire antenna 250 may be longer than that of the case where the additional semiconductor chips 300 and 400 are not interposed between the semiconductor chip 200 and the substrate 100.
  • the communication module according to another embodiment of the present invention may be used in a communication system of a lower frequency band than a communication system of a frequency band in which the communication module according to an embodiment of the present invention is used.
  • some of the additional bonding wires 360 and 460 connected to the additional semiconductor chips 300 and 400 may be used as the bonding wire antennas.
  • a monopole bonding wire communication module according to another embodiment of the present invention is described.
  • FIG. 14 is a perspective view illustrating a communication module according to another embodiment of the present invention
  • FIG. 15 is a plan view of FIG. 14.
  • Another embodiment of the present invention is a case in which a communication module according to an embodiment of the present invention is applied to a structure in which a plurality of semiconductor chips are mounted on a substrate (multi-chip module).
  • a substrate 100 is provided.
  • the substrate 100 may be the substrate described with reference to FIG. 8.
  • Semiconductor chips 200a, 200b, 200c, and 200d may be disposed on the substrate 100.
  • Adhesive pads 130a, 130b, 130c and 130d may be interposed between the semiconductor chips 200a, 200b, 200c and 200d and the substrate 100, respectively.
  • Adhesive materials 132a, 132b, 132c, and 132d may be interposed between the adhesive pads 130a, 130b, 130c, and 130d and the semiconductor chips 200a, 200b, 200c, and 200d, respectively.
  • the semiconductor chips 200a, 200b, 200c, and 200d may be mounted on the substrate 100 in a ball grid array package structure.
  • the semiconductor chips 200a, 200b, 200c, and 200d may include an integrated circuit. Sizes of the semiconductor chips 200 may be different.
  • First connection pads 110a, 110b, 110c and 110d 110 and second connection pads 120a, 120b, 120c and 120d may be disposed on the substrate 100.
  • the first connection pads 110a, 110b, 110c and 110d and the second connection pads 120a, 120b, 120c and 120d may include the same material having conductivity.
  • the first connection pads 110a, 110b, 110c and 110d and the second connection pads 120a, 120b, 120c and 120d may include other materials.
  • the second connection pads 120a, 120b, 120c, and 120d may include an insulating material.
  • the second connection pads 120a, 120b, 120c, and 120d may be electrically insulated from the substrate 100.
  • First bonding pads 240a, 240b, 240c, and 240d and second bonding pads 245a, 245b, 245c, and 245d may be disposed on the semiconductor chips 200a, 200b, 200c, and 200d.
  • Bonding wires 260a, 260b, 260c, and 260d electrically connected to the first bonding pads 240a, 240b, 240c, and 240d may be disposed on the substrate 100.
  • the bonding wires 260a, 260b, 260c, and 260d may be electrically connected to the first connection pads 110a, 110b, 110c, and 110d, respectively.
  • the bonding wires 260a, 260b, 160c, and 260d may electrically connect the integrated circuits of the semiconductor chips 200a, 200b, 200c, and 200d and the substrate 100.
  • Bonding wire antennas 250a, 250b, 250c, and 250d electrically connected to the second bonding pads 245a, 245b, 245c, and 245d may be disposed on the substrate 100.
  • the bonding wire antennas 250a, 250b, 250c, and 250d may be used as antennas of a communication module.
  • the bonding wire antennas 250a, 250b, 250c, and 250d may be connected to the second connection pads 120a, 120b, 120c, and 120d, respectively. , 250b, 250c, and 250d may not be connected to the second connection pads 120a, 120b, 120c, and 120d
  • the bonding wire antennas 250a, 250b, 250c, and 250d may transmit and receive a signal.
  • the bonding wire antennas 250a, 250b, 250c, and 250d may be provided in the same process as the bonding wires 260a, 260b, 260c, and 260d.
  • the length of the bonding wire antennas 250a, 250b, 250c, and 250d may vary depending on the wavelength of the signal used. In general, the length of the antenna may be โ‡ / 4 ( โ‡ : wavelength). For example, when the communication module uses a frequency of the 60Ghz band, since the wavelength of the signal is about 5mm, the length of the bonding wire antennas 250a, 250b, 250c, 250d may be about 1.25mm, and the communication module is When the frequency of the 77 GHz band is used, the wavelength of the signal is about 3.9 mm, so that the length of the bonding wire antennas 250a, 250b, 250c, and 250d may be about 0.97 mm. The lengths of the bonding wire antennas 250a, 250b, 250c, and 250d may be substantially the same. The length of the bonding wire antennas 250a, 250b, 250c, and 250d may be 0.8 mm to 1.5 mm.
  • each of the semiconductor chips 200a, 200b, 200c, and 200d disposed on the substrate 100 includes a bonding wire antenna, but some semiconductor chips include a bonding wire antenna, and some of the semiconductor chips It may not include a bonding wire antenna.
  • the semiconductor chips 200a, 200b, 200c, and 200d may include amplifiers 230a, 230b, 230c, and 230d.
  • the amplifiers 230a, 230b, 230c, and 230d may include at least one of a power amplifier and a low noise amplifier.
  • the power amplifier may be used for the bonding wire antennas 250a, 250b, 250c, 250d to transmit a signal.
  • the low noise amplifier may be used for the bonding wire antennas 250a, 250b, 250c, 250d to receive a signal.
  • At least one of the amplifiers 230a, 230b, 230c, and 230d may be provided using a CMOS process.
  • the semiconductor chips 200a, 200b, 200c, and 200d may include transceivers 210a, 210b, 210c, and 210d, respectively.
  • the transceivers 210a, 210b, 210c, and 210d may be electrically connected to the amplifiers 230a, 230b, 230c, and 230d, respectively.
  • Switches 220a, 220b, 220c and 220d may be disposed between the amplifiers 230a, 230b, 230c and 230d and the transceivers 210a, 210b, 210c and 210d.
  • the switches 220a, 220b, 220c and 220d may include transistors.
  • Signals may be input from the transceivers 210a, 210b, 210c, and 210d to the amplifiers 230a, 230b, 230c, and 230d, respectively.
  • Signals input to the amplifiers 230a, 230b, 230c, and 230d are transferred from the bonding wire antennas 250a, 250b, 250c, and 250d via the second bonding pads 245a, 245b, 245c, and 245d.
  • the amplifiers 230a, 230b, 230c, and 230d may be power amplifiers PA.
  • Output signals 10, 20, 30, and 40 may be output from the bonding wire antennas 250a, 250b, 250c, and 250d, respectively.
  • Signals input to the amplifiers 230a, 230b, 230c, 230d from the transceivers 210a, 210b, 201c, 210d so that the output signals 10, 20, 30, 40 may have the same phase. These phases may be the same. As the output signals 10, 20, 30, and 40 have the same phase, the output signals 10, 20, 30, and 40 may constructively interfere with each other. The output signals 10, 20, 30, and 40 are combined to form one wide area signal.
  • the reliability of the amplifier may be lowered due to the constraint of the output power of the amplifier.
  • the output power that can be used with reliability may be about 10 dBm due to constraints such as a hot carrier effect. Accordingly, there is a limitation that amplifiers provided using CMOS processes cannot be used in communication systems that require output powers of around 30 dBm. Accordingly, in a communication system requiring an output power of about 30 dBm, an amplifier implemented with a compound semiconductor has been used.
  • the plurality of bonding wire antennas 250a, 250b, 250c, and 250d respectively output the output signals 10, 20, 30, and 40 having the same phase to each other.
  • the gain of each of the amplifiers 230a, 230b, 230c, 230d can be small compared to the case where one semiconductor chip and a bonding wire antenna are disposed on the substrate 100. have.
  • the semiconductor chips each include one amplifier provided using a CMOS process having an output power of 10 dBm
  • the output signals of 10 dBm output by each amplifier are one. It can be combined into a high power wide area signal of around 28dBm.
  • the amplifiers 230a, 230b, 230c, and 230d may be implemented as compound semiconductors, or may be implemented as low cost CMOSs.
  • the amplifier when designing an amplifier included in the communication module, the amplifier is designed to have an output power corresponding to the maximum output power of the communication module. Accordingly, when the communication module operates at a lower output power than the maximum output power, the efficiency of the amplifier may be lowered due to the characteristics of the amplifier having the highest efficiency at the maximum output power.
  • a switch connecting the transceivers 210a, 210b, 210c, 210d and the amplifiers 230a, 230b, 230c, 230d on the semiconductor chips 200a, 200b, 200c, 200d.
  • the operation of the respective amplifiers 230a, 230b, 230c, and 230d may be controlled.
  • the operation of the amplifiers 230a, 230b, 230c, 230d may be adjusted by the respective switches 220a, 220b, 220c, 220d. That is, by controlling the operation of each of the amplifiers, it is possible to implement the maximum output power of the output signal required by the communication module, even if the communication module operates at an output power lower than the maximum output power, each amplifier is the maximum It can operate with output power of.
  • the respective amplifiers have a maximum output of 10 dBm, and eight semiconductor chips with amplifiers are placed on the substrate, six of the eight amplifiers to 10 dBm.
  • the wideband signal of 28dBm can be output.
  • the amplifiers can operate at maximum output power. Accordingly, the amplifiers operating among the plurality of amplifiers can operate at the highest efficiency, and thus a communication module optimized for high efficiency can be provided.
  • Signals may be received via the bonding wire antennas 250a, 250b, 250c, 250d. Signals received by the bonding wire antennas 250a, 250b, 250c, and 250d may be input to the transceivers 210a, 210b, 210c, and 210d through the amplifiers 230a, 230b, 230c, and 230d, respectively. have. In this case, the amplifiers 230a, 230b, 230c, and 230d may be low noise amplifiers (LNAs).
  • LNAs low noise amplifiers
  • a monopole bonding wire communication module according to a modification of another embodiment of the present invention is described.
  • the bonding wire antennas 250a, 250b, 250c, and 250d may be spaced apart at regular intervals.
  • the bonding wire antennas 250a, 250b, 250c, and 250d may be spaced at regular intervals with a spacing of lambda / 2 ( โ‡ : wavelength of a communication frequency in which the present invention is used).
  • functional blocks may be provided to delay signals through phase shifts and to overlap the delayed signals. Phases of the signals input to the amplifiers 230a, 230b, 230c, and 230d from the transceivers 210a, 210b, 210c, and 210d may be different.
  • Signals input to the amplifiers 230a, 230b, 230c, and 230d may have a predetermined phase difference, respectively.
  • the phases of the output signals 10, 20, 30, and 40 of the bonding wire antennas 250a, 250b, 250c, and 250d may have a predetermined difference, respectively.
  • the output signals 10, 20, 30, and 40 may each have a phase difference of 45 ยฐ.
  • the communication module according to the present invention can be used for beamforming.
  • 16 and 17 are graphs illustrating simulation results of a monopole bonding wire communication module according to embodiments of the present invention.
  • the horizontal axis of the graph represents frequency
  • the vertical axis of the graph represents output power.
  • the monopole bonding wire antenna communication module according to the embodiments of the present invention successfully transmits or receives a signal in a frequency band of 60 GHz in this simulation.
  • the monopole bonding wire antenna communication module according to the embodiments of the present invention may be used in a communication system using a high frequency band such as 60 GHz as the simulation result, as well as by using different frequency bands by varying the length of the bonding wire antenna. Can also be used in communication systems.
  • the X axis may be a direction in which the bonding wire antenna is disposed, and the Y axis and Z axis may be directions of an output signal output from the bonding wire antenna.
  • the output signal may be radiated from the bonding wire antenna and output from the bonding wire antenna.
  • the monopole bonding wire antenna communication module may output a signal as shown in the simulation result, and thus may be used as an antenna of the communication module. Accordingly, a communication module optimized for high integration having an ultra small antenna can be provided.
  • a communication module 100 according to an embodiment of the present invention is described.
  • 18 is a diagram for describing a communication module according to a first embodiment of the present invention.
  • the semiconductor chip SC1 may include a transceiver Tx / Rx, a plurality of amplifiers Amp1, Amp2, Amp3, and Amp4, and a plurality of switch elements S1, S2, S3, and S4.
  • the plurality of switch elements S1 to S4 may connect the plurality of amplifiers Amp1 to Amp4 to the transceivers Tx / Rx, respectively.
  • the plurality of amplifiers Amp1 to Amp4 may include a power amplifier and / or a low noise amplifier. At least one of the amplifiers Amp1 to Amp4 may be provided using a CMOS process.
  • the operation of the plurality of amplifiers Amp1 to Amp4 may be controlled by the plurality of switch elements S1 to S4.
  • the plurality of switch elements S1 to S4 may be transistors.
  • the semiconductor chip SC1 may include a memory device, a microprocessor device, and various electronic devices.
  • a plurality of antennas Ant1, Ant2, Ant3, and Ant4 may be provided on the semiconductor chip SC1.
  • One end and the other end of each of the antennas may be directly contacted with the semiconductor chip SC1. At least some of the remaining portions of the plurality of antennas except for one end may be spaced apart from the semiconductor chip SC1. For example, portions except the one end and the other end of each of the plurality of antennas may be spaced apart from the semiconductor chip SC1.
  • Shapes of the plurality of antennas may be implemented in various ways. For example, while the one end and the other end of the plurality of antennas contact the semiconductor chip SC1, each of the plurality of antennas has an arcuate shape convex from an upper surface of the semiconductor chip SC1. It may have a curved shape.
  • Portions other than the one end and the other end of each of the antennas may protrude from the semiconductor chip SC1.
  • the plurality of antennas may have a semicircular shape disposed on the semiconductor chip SC1.
  • the ends of the plurality of antennas may be connected to the plurality of switch elements S1 to S4, respectively.
  • Each of the antennas may have the same length.
  • each of the plurality of antennas may have a length of 0.8 mm to 1 mm.
  • Signals may be input from the transceiver Tx / Rx to the amplifiers Amp1 to Amp4.
  • the plurality of amplifiers Amp1 to Amp4 may be power amplifiers.
  • the signals input to the plurality of amplifiers Amp1 to Amp4 from the transceiver Tx / Rx may have the same phase.
  • the plurality of antennas receiving the signal may output output signals, respectively.
  • the output signals respectively output from the plurality of antennas may have the same phase. By having the output signals have the same phase, the output signals may be constructively interfered with each other to constitute one wide area signal.
  • the reliability of the amplifier may be lowered due to the constraint of the output power of the amplifier.
  • an amplifier provided using a CMOS process is limited by a hot carrier effect, and the like, and the output power that can be used with reliability may be about 10 dBm. Accordingly, there is a limitation that amplifiers provided using CMOS processes cannot be used in communication systems that require output powers of around 30 dBm. Accordingly, in a communication system requiring an output power of about 30 dBm, an amplifier implemented with a compound semiconductor has been used.
  • the plurality of antennas output the output signals each having the same phase to form one wide area signal, so that each of the plurality of amplifiers Amp1 to Amp4
  • the output powers may be small compared with the case where one amplifier is disposed on the semiconductor chip SC1.
  • the semiconductor chip SC1 includes six amplifiers provided by using a CMOS process having an output power of 10 dBm
  • the output signals of 10 dBm output by each amplifier are about 28 dBm high power wide area signals.
  • the plurality of amplifiers Amp1 to Amp4 may not only be implemented as compound semiconductors, but also may be implemented as low cost CMOS, and thus a low cost communication module may be provided.
  • the amplifier when designing an amplifier included in the communication module, the amplifier is designed to have an output power corresponding to the maximum output power of the communication module. Accordingly, when the communication module operates at a lower output power than the maximum output power, the efficiency of the amplifier may be lowered due to the characteristics of the amplifier having the highest efficiency at the maximum output power.
  • a plurality of switch elements for connecting the transceiver (Tx / Rx) and the plurality of amplifiers (Amp1 โ‡ Amp4) on the semiconductor chip (SC1), respectively
  • S1 โ‡ S4 for connecting the transceiver (Tx / Rx) and the plurality of amplifiers (Amp1 โ‡ Amp4) on the semiconductor chip (SC1), respectively
  • each of the amplifiers it is possible to implement the maximum output power of the output signal required by the communication module, even if the communication module operates at an output power lower than the maximum output power, each amplifier is the maximum It can operate with output power of.
  • the necessary strength of the wide area signal is 28 dBm
  • the maximum output of the amplifier is 10 dBm
  • the semiconductor chip SC1 includes eight amplifiers, six of the eight amplifiers operate at 10 dBm. It can output 28dBm wide area signal.
  • the amplifiers can operate at maximum output power. Accordingly, amplifiers operating among the plurality of amplifiers can operate at the highest efficiency, and thus a communication module optimized for high efficiency can be provided.
  • Signals may be received via the antenna. Signals received from the plurality of antennas may be input to the transceiver Tx / Rx through the plurality of amplifiers Amp1 to Amp4. In this case, the plurality of amplifiers Amp1 to Amp4 may be low noise amplifiers.
  • the plurality of antennas Ants may be spaced apart from each other at regular intervals on the semiconductor chip SC1.
  • the plurality of antennas may be spaced at regular intervals at intervals of โ‡ / 2 ( โ‡ : wavelength of a communication frequency in which the present invention is used).
  • functional blocks may be provided to delay a signal through a phase shift and overlap the delayed signals.
  • the phases of the signals input to the plurality of amplifiers Amp1 to Amp4 from the transceiver Tx / Rx may be different.
  • Signals input to the plurality of amplifiers Amp1 to Amp4 may each have a predetermined phase difference.
  • the phases of the output signals of the plurality of antennas may have a constant difference.
  • the output signals may each have a phase difference of 45 ยฐ.
  • the plurality of antennas may be used for beamforming.
  • FIG. 20 is a cross-sectional view taken along line II โ€ฒ of FIG. 19.
  • the bonding pads 122 may be disposed on the semiconductor chip SC1.
  • a plurality of bonding pads 122 may be provided along edges of the semiconductor chip SC1.
  • the substrate 110 on which the semiconductor chip SC1 is mounted may be provided.
  • the semiconductor chip SC1 may be disposed on an upper surface of the substrate 110.
  • the area of the substrate 110 may be larger than the area of the semiconductor chip SC1.
  • the substrate 110 may be a substrate for a package.
  • An insulating material 136 may be disposed on the bottom surface of the substrate 110. Junction electrodes 138 and solder balls 139 penetrating the insulating material 136 may be disposed on the lower surface of the substrate 110.
  • An adhesive pad 134 and an adhesive material 132 may be sequentially disposed between the upper surface of the substrate 110 and the semiconductor chip SC1.
  • the adhesive pad 134 may include a conductive material. In this case, the adhesive pad 134 may be used for connection with the ground. Alternatively, the adhesive pad 134 may include an insulating material.
  • the adhesive material 132 may fix the semiconductor chip SC1 on the upper surface of the substrate 110.
  • the semiconductor chip SC1 may be mounted on the substrate 110 in a ball grid array package
  • connection pad 126 may be disposed on the upper surface of the substrate 110.
  • the connection pad 126 may be provided in plural along the edge of the substrate 110.
  • a bonding wire 124 connecting the connection pad 126 and the bonding pad 122 may be provided.
  • the bonding wire 124 may electrically connect various electronic elements included in the semiconductor chip SC1 with the substrate 110.
  • a communication module 300 according to another embodiment of the present invention is described.
  • 21 and 22 illustrate a communication module according to another embodiment of the present invention, and
  • FIG. 22 is a cross-sectional view taken along line II-II 'of FIG. 21.
  • the communication module 100 described with reference to FIG. 1 may be provided.
  • the semiconductor chip SC1 may be disposed on the upper surface of the substrate 110.
  • An adhesive pad 112 may be disposed between the semiconductor chip SC1 and the substrate 110 so that the semiconductor chip SC1 may be fixed to the substrate 110.
  • the substrate 110 may be the substrate 110 described with reference to FIGS. 19 and 20.
  • the junction electrode 138, the solder ball 139, and the insulating material 136 described with reference to FIGS. 19 and 20 may be disposed on the lower surface of the substrate 110.
  • the semiconductor chip SC1 may include a connection electrode 142.
  • the connection pad 144 may be disposed on the upper surface of the substrate 110.
  • the connection pad 144 may be interposed between an upper surface of the substrate 110 and the semiconductor chip SC1.
  • a via contact plug 140 may be provided through the connection pad 142 and the semiconductor chip SC1 to be electrically connected to the connection pad 144.
  • the via contact plug 140 may electrically connect various electronic devices in the semiconductor chip SC1 and the substrate 110.
  • a communication module 400 according to another embodiment of the present invention is described.
  • 23 and 24 illustrate a communication module according to another embodiment of the present invention, and
  • FIG. 24 is a cross-sectional view taken along line III-III โ€ฒ of FIG. 23.
  • the communication module 300 described with reference to FIGS. 21 and 22 may be provided.
  • Additional semiconductor chips SC2 and SC3 may be interposed between the semiconductor chip SC1 and the substrate 110.
  • the additional semiconductor chips SC2 and SC3 may include a memory device and a microprocessor device. Although two additional semiconductor chips SC2 and SC3 are shown in the figure, one or two or more semiconductor chips may be disposed.
  • the semiconductor chips SC1 to SC3 may include connection electrodes 142, respectively.
  • the semiconductor chips SC1 to SC3 may be stacked on the substrate 110.
  • the stacked semiconductor chips SC1 to SC3 may be fixedly disposed on the substrate 110 by adhesive pads 112, 113, and 114.
  • the via contact plug 140 may be electrically connected to the connection pad 144 disposed on the substrate 110 through the semiconductor chips SC1 to SC3 and the connection electrodes 142.
  • the via contact plug 140 may electrically connect various electronic devices in the semiconductor chips SC1 to SC3 and the substrate 110.
  • Embodiments of the present invention may be used in a communication module.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)

Abstract

Provided is a bonding wire antenna communication module. The bonding wire antenna communication module comprises: a semiconductor chip including bonding pads arranged on a substrate; and bonding wire antennas electrically connected to the bonding pads. The semiconductor chip of the communication module comprises inexpensive CMOS amplifiers, and each of the amplifiers operates at the highest efficiency, thereby providing an inexpensive, high-efficiency and optimized highly integrated communication module.

Description

๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆBonding Wire Antenna Communication Module

๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋Š” ํ†ต์‹  ๋ชจ๋“ˆ์— ๊ด€ํ•œ ๊ฒƒ์ด๋‹ค. An embodiment of the present invention relates to a communication module.

๊ณ ์† ์ „์†ก ๋ฌด์„  ๋„คํŠธ์›Œํฌ์—์„œ ํ†ต์‹  ์„œ๋น„์Šค์˜ ํ’ˆ์งˆ, ๋ณด์•ˆ, ์‹ ๋ขฐ์„ฑ ๋ฐ ๊ณ ์† ์ „์†ก๋น„๋Š” ํ†ต์‹  ๋ชจ๋“ˆ์— ์˜ํ•ด ์ขŒ์šฐ๋  ์ˆ˜ ์žˆ๋‹ค. ํ†ต์‹  ๋ชจ๋“ˆ์—์„œ ์•ˆํ…Œ๋‚˜๋Š” ํ†ต์‹  ์‹œ์Šคํ…œ์˜ ํ’ˆ์งˆ์„ ๊ฒฐ์ •ํ•˜๋Š” ์ฃผ์š” ๊ตฌ์„ฑ์ด๋‹ค. ๋ฌด์„  ํ†ต์‹  ๋„คํŠธ์›Œํฌ ํ™˜๊ฒฝ์ด ๊ตฌ์ถ•๋จ์— ๋”ฐ๋ผ, ํ’ˆ์งˆ์ด ์šฐ์ˆ˜ํ•œ ์•ˆํ…Œ๋‚˜๋ฅผ ๊ฐ–๋Š” ํ†ต์‹ ๋ชจ๋“ˆ์— ๋Œ€ํ•œ ์ˆ˜์š”๊ฐ€ ์ฆ๊ฐ€ํ•˜๊ณ  ์žˆ๋‹ค. ํŠนํžˆ, ํœด๋Œ€์šฉ ๊ธฐ๊ธฐ๋“ค ๋ฐ ๊ธฐํƒ€ ์ „์ž ๊ธฐ๊ธฐ๋“ค ์‚ฌ์ด์˜ ๋ฌด์„  ๋„คํŠธ์›Œํฌ์˜ ๊ตฌ์ถ•์„ ์œ„ํ•ด ๊ณ ์ง‘์ ํ™” ๋ฐ ๊ณ ํšจ์œจํ™”์— ์ตœ์ ํ™”๋œ ํ†ต์‹ ๋ชจ๋“ˆ์ด ๊ฐ๊ด‘๋ฐ›๊ณ  ์žˆ๋‹ค. In a high speed transmission wireless network, the quality, security, reliability, and high speed transmission rate of a communication service may depend on a communication module. The antenna in the communication module is the main component that determines the quality of the communication system. As the wireless communication network environment is established, the demand for a communication module having an excellent antenna is increasing. In particular, a communication module optimized for high integration and high efficiency for building a wireless network between portable devices and other electronic devices has been in the spotlight.

ํ†ต์‹  ๋ชจ๋“ˆ์˜ ์†Œํ˜•ํ™” ์ถ”์„ธ์— ๋งž์ถ”์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ์†Œํ˜•ํ™”ํ•˜์—ฌ ๊ณ ์ง‘์ ํ™”๋œ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์ œ๊ณตํ•˜๊ธฐ ์œ„ํ•œ ๋งŽ์€ ์—ฐ๊ตฌ๋“ค์ด ์ง„ํ–‰ ์ค‘์ด๋‹ค. ๋‹ค๋งŒ, ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” ์ผ๋ฐ˜์ ์œผ๋กœ ์‚ฌ์šฉํ•˜๋Š” ํŒŒ์žฅ์˜ 1/4์˜ ๊ธธ์ด๋ฅผ ํ•„์š”๋กœ ํ•˜์—ฌ ์†Œํ˜• ์•ˆํ…Œ๋‚˜์˜ ๊ตฌํ˜„์—๋Š” ์ œ์•ฝ์ด ์žˆ๋‹ค. In accordance with the trend of miniaturization of communication modules, many studies are being conducted to miniaturize antennas to provide highly integrated communication modules. However, since the length of the antenna generally requires a length of 1/4 of the wavelength used, there is a limitation in the implementation of a small antenna.

ํ•˜์ง€๋งŒ, ๋ฌด์„  ๊ฐœ์ธ ์˜์—ญ ๋„คํŠธ์›Œํฌ(WPAN: Wireless Personal Area Network)์—์„œ๋Š” ์ฃผ๋กœ ๋ฐ€๋ฆฌ๋ฏธํ„ฐ ์ฃผํŒŒ์ˆ˜ ๋Œ€์—ญ์˜ ์‹ ํ˜ธ๋ฅผ ์‚ฌ์šฉํ•˜์—ฌ, ์ดˆ์†Œํ˜•์˜ ์•ˆํ…Œ๋‚˜์˜ ๊ตฌํ˜„์ด ๊ฐ€๋Šฅํ•˜๋‹ค. ๋ฌด์„  ๊ฐœ์ธ ์˜์—ญ ๋„คํŠธ์›Œํฌ(WPAN) ํ™˜๊ฒฝ์„ ๊ตฌ์ถ•ํ•˜๊ธฐ ์œ„ํ•˜์—ฌ ๊ณ ์‹ ๋ขฐ์„ฑ, ์ €๊ฐ€๊ฒฉ ๋ฐ ๊ณ ํšจ์œจ์— ์ตœ์ ํ™”๋œ ์†Œํ˜• ์•ˆํ…Œ๋‚˜๋ฅผ ๊ฐ€์ง€๋Š” ํ†ต์‹  ๋ชจ๋“ˆ์„ ๊ตฌํ˜„ํ•˜๊ธฐ ์œ„ํ•œ ๋งŽ์€ ์—ฐ๊ตฌ๋“ค์ด ์ง„ํ–‰ ์ค‘์ด๋‹ค. However, in a wireless personal area network (WPAN), it is possible to implement a very small antenna using a signal of a millimeter frequency band. In order to build a wireless personal area network (WPAN) environment, many studies are underway to implement a communication module having a small antenna optimized for high reliability, low cost and high efficiency.

๋ณธ ๋ฐœ๋ช…์ด ์ด๋ฃจ๊ณ ์ž ํ•˜๋Š” ์ผ ๊ธฐ์ˆ ์  ๊ณผ์ œ๋Š” ์†Œํ˜• ์•ˆํ…Œ๋‚˜๋ฅผ ๊ตฌ๋น„ํ•˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ์„ ์ œ๊ณตํ•˜๋Š” ๋ฐ ์žˆ๋‹ค. One object of the present invention is to provide a communication module having a small antenna.

๋ณธ ๋ฐœ๋ช…์ด ์ด๋ฃจ๊ณ ์ž ํ•˜๋Š” ๋‹ค๋ฅธ ๊ธฐ์ˆ ์  ๊ณผ์ œ๋Š” ๊ณ ํšจ์œจ์— ์ตœ์ ํ™”๋œ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์ œ๊ณตํ•˜๋Š” ๋ฐ ์žˆ๋‹ค. Another object of the present invention is to provide a communication module optimized for high efficiency.

๋ณธ ๋ฐœ๋ช…์ด ์ด๋ฃจ๊ณ ์ž ํ•˜๋Š” ๋˜ ๋‹ค๋ฅธ ๊ธฐ์ˆ ์  ๊ณผ์ œ๋Š” ์ €๋ ดํ•œ ๊ฐ€๊ฒฉ์— ์ƒ์‚ฐ์ด ๊ฐ€๋Šฅํ•œ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์ œ๊ณตํ•˜๋Š” ๋ฐ ์žˆ๋‹ค. Another technical problem to be achieved by the present invention is to provide a communication module that can be produced at a low price.

๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ๊ธฐํŒ, ๊ธฐํŒ ์ƒ์˜ ๋ฐ˜๋„์ฒด ์นฉ, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์˜ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋˜๊ณ , ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•˜๋Š” ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•œ๋‹ค. The bonding wire antenna communication module according to an embodiment of the present invention is electrically connected to a substrate, a semiconductor chip on the substrate, a plurality of bonding pads on the semiconductor chip, and the plurality of bonding pads, and transmit and receive signals. It includes.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the semiconductor chip may include a plurality of amplifiers electrically connected to the bonding pads.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋Š” ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier) ๋ฐ ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Amplifier) ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the plurality of amplifiers may include at least one of a power amplifier and a low noise amplifier.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜์˜ ์ฆํญ๊ธฐ๋Š” CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, at least one of the plurality of amplifiers may be provided using a CMOS process.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ์™€ ์—ฐ๊ฒฐ๋œ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the semiconductor chip may include a transceiver connected to the plurality of amplifiers.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ์ผ์ •ํ•œ ๊ฐ„๊ฒฉ์œผ๋กœ ์ด๊ฒฉ๋˜์–ด ๋ฐฐ์น˜๋˜๊ณ , ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€์—์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋กœ ์ž…๋ ฅ๋˜๋Š” ๊ฐ๊ฐ์˜ ์‹ ํ˜ธ๋“ค์€ ์œ„์ƒ์˜ ์ฐจ์ด๋ฅผ ๊ฐ€์ง€๊ณ , ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ๋น”ํฌ๋ฐ(Beamforming)์— ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the bonding wire antennas are spaced apart at regular intervals, and each of the signals input from the transceiver to the plurality of amplifiers has a phase difference, and the plurality of bonding wire antennas are beamforming. Can be used).

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๋ฐ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ์—ฐ๊ฒฐํ•˜๋Š” ์Šค์œ„์น˜๋ฅผ ๋” ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, it may further include a switch connecting the plurality of amplifiers and the transceiver.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ์Šค์œ„์น˜๋Š” ํŠธ๋žœ์ง€์Šคํ„ฐ๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the switch may comprise a transistor.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ–๋Š” ์‹ ํ˜ธ๋ฅผ ์ถœ๋ ฅํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the plurality of bonding wire antennas can output signals having the same phase.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์—์„œ ์ถœ๋ ฅ๋˜๋Š” ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, output signals output from the plurality of bonding wire antennas may constitute one wide area signal.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๊ฐ๊ฐ์˜ ๋™์ž‘ ์—ฌ๋ถ€๋Š”, ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅํŒŒ์›Œ์— ๋”ฐ๋ผ์„œ ์กฐ์ ˆ๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, whether to operate each of the plurality of amplifiers can be adjusted according to the output power of the wide area signal.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ์ƒ๊ธฐ ๊ธฐํŒ ์ƒ์— ๋ฐฐ์น˜๋œ ์ ‘์† ํŒจ๋“œ๋“ค์„ ๋” ํฌํ•จํ•˜๋˜, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ์ƒ๊ธฐ ์ ‘์† ํŒจ๋“œ๋“ค๊ณผ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the bonding wire antenna communication module further includes connection pads disposed on the substrate, and the plurality of bonding wire antennas may be connected to the connection pads.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋™ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” ์‹ค์งˆ์ ์œผ๋กœ ๋™์ผํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the lengths of the plurality of moving wire antennas may be substantially the same.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” 0.8mm ~1mm ์ผ ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the length of the plurality of bonding wire antennas may be 0.8 mm to 1 mm.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณธ๋”ฉ ์™€์ด์–ด๋ฅผ ๋” ํฌํ•จํ•˜๊ณ , ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด์™€ ๋™์ผํ•œ ๊ณต์ •์—์„œ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, further comprising a bonding wire electrically connected to the bonding pad, the plurality of bonding wire antenna may be provided in the same process as the bonding wire.

์ด ์‹ค์‹œ ํ˜•ํƒœ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๊ธฐํŒ ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด์นฉ ์‚ฌ์ด์— ๊ฐœ์žฌ๋œ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด์นฉ๋“ค์„ ๋” ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the semiconductor substrate may further include additional semiconductor chips interposed between the substrate and the semiconductor chip.

๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ๊ธฐํŒ, ์ƒ๊ธฐ ๊ธฐํŒ ์ƒ์˜ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๋ฐ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ์™€ ์—ฐ๊ฒฐ๋œ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ํฌํ•จํ•˜๋Š” ๋ฐ˜๋„์ฒด ์นฉ, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์˜ ์ œ1 ๋ณธ๋”ฉ ํŒจ๋“œ ๋ฐ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ์™€ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ, ์ƒ๊ธฐ ์ œ1 ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณธ๋”ฉ ์™€์ด์–ด ๋ฐ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋˜๊ณ , ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•˜๋Š” ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•œ๋‹ค. According to another aspect of the present invention, a bonding wire antenna communication module includes a semiconductor chip including a substrate, a plurality of amplifiers on the substrate, and a transceiver connected to the plurality of amplifiers, a first bonding pad on the semiconductor chip, and the plurality of amplifiers. And a plurality of bonding wire antennas connected to each other, a bonding wire electrically connected to the first bonding pads, and a plurality of bonding wire antennas electrically connected to the plurality of second bonding pads and transmitting and receiving signals.

๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์€ ๊ธฐํŒ, ์ƒ๊ธฐ ๊ธฐํŒ ์ƒ์— ๋ฐฐ์น˜๋˜๊ณ , ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๋ฐ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ํฌํ•จํ•˜๋Š” ๋ฐ˜๋„์ฒด ์นฉ, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์˜ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋˜๊ณ , ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์„ ๊ฐ๊ฐ ์ถœ๋ ฅํ•˜๋Š” ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜๋˜, ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•˜๊ณ , ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๊ฐ๊ฐ์˜ ๋™์ž‘ ์—ฌ๋ถ€๋Š” ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅํŒŒ์›Œ์— ๋”ฐ๋ผ ์ œ์–ด๋œ๋‹ค.According to another embodiment of the present invention, a communication module includes a substrate, a semiconductor chip disposed on the substrate, the semiconductor chip including a plurality of amplifiers and a transceiver, a plurality of bonding pads on the semiconductor chip, and a plurality of bonding pads. And a plurality of bonding wire antennas respectively outputting output signals, wherein the output signals constitute one wide area signal, and whether each of the plurality of amplifiers is operated according to the output power of the wide area signal.

๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ๊ธฐํŒ, ์ƒ๊ธฐ ๊ธฐํŒ ์ƒ์˜ ๋ฐ˜๋„์ฒด ์นฉ, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์˜ ๋ณธ๋”ฉ ํŒจ๋“œ, ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋˜๊ณ , ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•œ๋‹ค. The monopole bonding wire antenna communication module according to an embodiment of the present invention includes a substrate, a semiconductor chip on the substrate, a bonding pad on the semiconductor chip, and a bonding wire antenna electrically connected to the bonding pad and transmitting and receiving a signal.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the semiconductor chip may include an amplifier electrically connected to the bonding pad.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋Š” ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier) ๋ฐ ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Amplifier) ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the amplifier may include at least one of a power amplifier and a low noise amplifier.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ์ฆํญ๊ธฐ์™€ ์—ฐ๊ฒฐ๋œ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the semiconductor chip may include a transceiver connected to the amplifier.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ์ƒ๊ธฐ ์ฆํญ๊ธฐ ๋ฐ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ์—ฐ๊ฒฐํ•˜๋Š” ์Šค์œ„์น˜๋ฅผ ๋” ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the monopole bonding wire antenna communication module may further include a switch connecting the amplifier and the transceiver.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ์Šค์œ„์น˜๋Š” ํŠธ๋žœ์ง€์Šคํ„ฐ๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the switch may include a transistor.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ์ƒ๊ธฐ ๊ธฐํŒ ์ƒ์— ๋ฐฐ์น˜๋œ ์ ‘์† ํŒจ๋“œ๋ฅผ ๋” ํฌํ•จํ•˜๋˜, ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค์€ ์ƒ๊ธฐ ์ ‘์† ํŒจ๋“œ๋“ค๊ณผ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the monopole bonding wire antenna communication module further includes connection pads disposed on the substrate, and the bonding wire antennas may be connected to the connection pads.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์— ์‚ฌ์šฉ๋˜๋Š” ์ฃผํŒŒ์ˆ˜์— ๋”ฐ๋ผ ๋‹ฌ๋ผ์งˆ ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the length of the bonding wire antenna may vary depending on a frequency used in the bonding wire antenna communication module.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” 0.8mm ~1.5mm ์ผ ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the length of the bonding wire antenna may be 0.8 mm to 1.5 mm.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณธ๋”ฉ ์™€์ด์–ด๋ฅผ ๋” ํฌํ•จํ•˜๊ณ , ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด์™€ ๋™์ผํ•œ ๊ณต์ •์—์„œ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the monopole bonding wire antenna communication module further includes a bonding wire electrically connected to the bonding pad, and the bonding wire antenna may be provided in the same process as the bonding wire.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ์ƒ๊ธฐ ๊ธฐํŒ ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด์นฉ ์‚ฌ์ด์— ๊ฐœ์žฌ๋œ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด์นฉ๋“ค์„ ๋” ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the monopole bonding wire antenna communication module may further include additional semiconductor chips interposed between the substrate and the semiconductor chip.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ ์‚ฌ์ด์— ๋ฐฐ์น˜๋œ ๋ฒ”ํ”„๋ฅผ ๋” ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the monopole bonding wire antenna communication module may further include a bump disposed between the semiconductor chip and the substrate.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๋ชจ์–‘์— ๋”ฐ๋ผ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์—์„œ ์†ก์‹ ๋˜๋Š” ์‹ ํ˜ธ์˜ ๋ฐฉํ–ฅ์ด ์กฐ์ ˆ๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the monopole bonding wire antenna communication module may adjust a direction of a signal transmitted from the bonding wire antenna according to the shape of the bonding wire antenna.

๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์€ ๊ธฐํŒ, ์ƒ๊ธฐ ๊ธฐํŒ ์ƒ์˜ ๋ณต์ˆ˜์˜ ๋ฐ˜๋„์ฒด ์นฉ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์˜ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋˜๊ณ , ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•˜๋Š” ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•œ๋‹ค. According to another aspect of the present invention, a communication module includes a substrate, a plurality of semiconductor chips on the substrate, a plurality of bonding pads on the plurality of semiconductor chips, and a plurality of bonding electrically connected to the plurality of bonding pads and transmitting and receiving signals. And a wire antenna.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋˜, ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜์˜ ์ฆํญ๊ธฐ๋Š” CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the plurality of semiconductor chips may include a plurality of amplifiers electrically connected to the plurality of bonding pads, and at least one amplifier may be provided using a CMOS process.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ์™€ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the plurality of semiconductor chips may include a plurality of transceivers connected to the plurality of amplifiers.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์†ก์ˆ˜์‹ ๋ถ€์—์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋กœ ์ž…๋ ฅ๋˜๋Š” ๊ฐ๊ฐ์˜ ์‹ ํ˜ธ๋“ค์€ ์œ„์ƒ์˜ ์ฐจ์ด๋ฅผ ๊ฐ€์ง€๊ณ , ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ๋น”ํฌ๋ฐ(Beamforming)์— ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, each of the signals input from the plurality of transceivers to the plurality of amplifiers has a phase difference, and the plurality of bonding wire antennas may be used for beamforming.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ–๋Š” ์‹ ํ˜ธ๋ฅผ ์ถœ๋ ฅํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the plurality of bonding wire antennas may output signals having the same phase.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์—์„œ ์ถœ๋ ฅ๋˜๋Š” ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the output signals output from the plurality of bonding wire antennas may constitute one wide area signal.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๊ฐ๊ฐ์˜ ๋™์ž‘ ์—ฌ๋ถ€๋Š”, ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅํŒŒ์›Œ์— ๋”ฐ๋ผ์„œ ์กฐ์ ˆ๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, whether each of the plurality of amplifiers is operated may be adjusted according to the output power of the wide area signal.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” ์‹ค์งˆ์ ์œผ๋กœ ๋™์ผํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the lengths of the plurality of bonding wire antennas may be substantially the same.

๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ๊ธฐํŒ, ์ƒ๊ธฐ ๊ธฐํŒ ์ƒ์— ๋ฐฐ์น˜๋˜๊ณ , ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๋ฐ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ํฌํ•จํ•˜๋Š” ๋ฐ˜๋„์ฒด ์นฉ, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์˜ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋˜๊ณ , ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์„ ๊ฐ๊ฐ ์ถœ๋ ฅํ•˜๋Š” ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜๋˜, ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•˜๊ณ , ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๊ฐ๊ฐ์˜ ๋™์ž‘ ์—ฌ๋ถ€๋Š” ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅํŒŒ์›Œ์— ๋”ฐ๋ผ ์ œ์–ด๋œ๋‹ค. A monopole bonding wire antenna communication module according to another embodiment of the present invention is a substrate, a semiconductor chip disposed on the substrate, including a plurality of amplifiers and transceivers, a plurality of bonding pads on the semiconductor chip, the plurality of bonding pads And a plurality of bonding wire antennas electrically connected to and outputting the output signals, respectively, wherein the output signals constitute one wide area signal, and whether each of the plurality of amplifiers is operated according to the output power of the wide area signal. Controlled.

๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์€ ๋ฐ˜๋„์ฒด ์นฉ ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์— ์„œ๋กœ ์ด๊ฒฉ๋˜์–ด ๋ฐฐ์น˜๋˜๊ณ , ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•˜๋Š” ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•œ๋‹ค.The communication module according to another embodiment of the present invention includes a semiconductor chip and a plurality of antennas spaced apart from each other and transmitting and receiving signals.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜ ๊ฐ๊ฐ์˜ ์ผ๋‹จ ๋ฐ ํƒ€๋‹จ์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๊ณผ ๊ฐ๊ฐ ์—ฐ๊ฒฐ๋˜๊ณ , ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜ ๊ฐ๊ฐ์˜ ์ƒ๊ธฐ ์ผ๋‹จ ๋ฐ ์ƒ๊ธฐ ํƒ€๋‹จ์„ ์ œ์™ธํ•œ ๋ถ€๋ถ„ ์ค‘ ์ ์–ด๋„ ์ผ๋ถ€๋Š” ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์œผ๋กœ๋ถ€ํ„ฐ ์ด๊ฒฉ๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, one end and the other end of each of the plurality of antennas may be connected to the semiconductor chip, respectively, and at least some of the portions except for the one end and the other end of each of the plurality of antennas may be spaced apart from the semiconductor chip. .

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜์˜ ์ƒ๊ธฐ ์ผ๋‹จ๋“ค๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ๊ฐ๊ฐ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋ฅผ ๋” ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the semiconductor chip may further include a plurality of amplifiers electrically connected to the ends of the plurality of antennas, respectively.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋Š” ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier) ๋˜๋Š” ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Amplifier) ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the plurality of amplifiers may include at least one of a power amplifier and a low noise amplifier.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜์˜ ์ฆํญ๊ธฐ๋Š” CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, at least one of the plurality of amplifiers may be provided using a CMOS process.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ์™€ ์—ฐ๊ฒฐ๋œ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ๋” ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the semiconductor chip may further include a transceiver connected to the plurality of amplifiers.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜๋Š” ์ผ์ •ํ•œ ๊ฐ„๊ฒฉ์œผ๋กœ ์„œ๋กœ ์ด๊ฒฉ๋˜์–ด ๋ฐฐ์น˜๋˜๊ณ , ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€์—์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋กœ ์ž…๋ ฅ๋˜๋Š” ๊ฐ๊ฐ์˜ ์‹ ํ˜ธ๋“ค์€ ์œ„์ƒ์˜ ์ฐจ์ด๋ฅผ ๊ฐ€์ง€๊ณ , ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜๋Š” ๋น”ํฌ๋ฐ(beamforming)์— ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the plurality of antennas are spaced apart from each other at regular intervals, and each of the signals input from the transceiver to the plurality of amplifiers has a phase difference, and the plurality of antennas are formed by beamforming. Can be used for

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๋ฐ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ์—ฐ๊ฒฐํ•˜๋Š” ์Šค์œ„์น˜ ์†Œ์ž๋ฅผ ๋” ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment may further include a switch element for connecting the plurality of amplifiers and the transceiver.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜๋Š” ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ–๋Š” ์‹ ํ˜ธ๋ฅผ ์ถœ๋ ฅํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the plurality of antennas may output a signal having the same phase.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜์—์„œ ์ถœ๋ ฅ๋˜๋Š” ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the signals output from the plurality of antennas may constitute one wide area signal.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๊ฐ๊ฐ์˜ ๋™์ž‘ ์—ฌ๋ถ€๋Š”, ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅํŒŒ์›Œ์— ๋”ฐ๋ผ์„œ ์กฐ์ ˆ๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, whether each of the plurality of amplifiers is operated may be adjusted according to the output power of the wide area signal.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” 0.8mm~1mm ์ผ ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the antenna may have a length of 0.8 mm to 1 mm.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ํ†ต์‹  ๋ชจ๋“ˆ์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์— ๋ฐฐ์น˜๋œ ๋ณธ๋”ฉ ํŒจ๋“œ, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์ด ๋ฐฐ์น˜๋˜๋Š” ๊ธฐํŒ, ์ƒ๊ธฐ ๊ธฐํŒ ์ƒ์˜ ์ ‘์† ํŒจ๋“œ ๋ฐ ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ ๋ฐ ์ƒ๊ธฐ ์ ‘์† ํŒจ๋“œ๋ฅผ ์—ฐ๊ฒฐํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด๋ฅผ ๋” ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the communication module may further include a bonding pad disposed on the semiconductor chip, a substrate on which the semiconductor chip is disposed, a connection pad on the substrate, and a bonding wire connecting the bonding pad and the connection pad. have.

๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์ด ๋ฐฐ์น˜๋˜๋Š” ๊ธฐํŒ, ์ƒ๊ธฐ ๊ธฐํŒ๊ณผ ์—ฐ๊ฒฐ๋˜๊ณ , ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ ์‚ฌ์ด์— ๋ฐฐ์น˜๋œ ์ ‘์† ํŒจ๋“œ ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์„ ๊ด€ํ†ตํ•˜๊ณ , ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ๋ฐ ์ƒ๊ธฐ ์ ‘์† ํŒจ๋“œ๋ฅผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐํ•˜๋Š” ๋น„์•„ ์ฝ˜ํƒ ํ”Œ๋Ÿฌ๊ทธ๋ฅผ ๋” ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. According to another embodiment of the present invention, a communication module includes a substrate on which the semiconductor chip is disposed, a connection pad connected to the substrate, a connection pad disposed between the semiconductor chip and the substrate, the semiconductor chip, The device may further include a via contact plug that electrically connects the connection pad.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ํ†ต์‹  ๋ชจ๋“ˆ์€ ์ƒ๊ธฐ ๊ธฐํŒ ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์‚ฌ์ด ๋ฐฐ์น˜๋œ ๋ณต์ˆ˜์˜ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ์„ ๋” ํฌํ•จํ•˜๋˜, ์ƒ๊ธฐ ๋น„์•„ ์ฝ˜ํƒ ํ”Œ๋Ÿฌ๊ทธ๋Š” ์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ์„ ๋” ๊ด€ํ†ตํ•  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the communication module may further include a plurality of additional semiconductor chips disposed between the substrate and the semiconductor chip, wherein the via contact plug may further penetrate the additional semiconductor chip.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ํ†ต์‹  ๋ชจ๋“ˆ์€ ์†ก์ˆ˜์‹ ๋ถ€ ๋ฐ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€์™€ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋Š” ๋ฐ˜๋„์ฒด ์นฉ ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์— ๋ฐฐ์น˜๋˜๊ณ , ์‹ ํ˜ธ๋“ค์„ ๊ฐ๊ฐ ์ถœ๋ ฅํ•˜๋Š” ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜๋˜, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜์˜ ์ผ๋‹จ๋“ค์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ์™€ ๊ฐ๊ฐ ์—ฐ๊ฒฐ๋˜๊ณ , ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜ ๊ฐ๊ฐ์˜ ์ƒ๊ธฐ ์ผ๋‹จ์„ ์ œ์™ธํ•œ ๋ถ€๋ถ„ ์ค‘ ์ ์–ด๋„ ์ผ๋ถ€๋Š” ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์œผ๋กœ๋ถ€ํ„ฐ ์ด๊ฒฉ๋˜๊ณ , ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•œ๋‹ค. In this embodiment, the communication module includes a semiconductor chip including a transceiver and a plurality of amplifiers connected to the transceiver and a plurality of antennas disposed on the semiconductor chip and outputting signals, respectively; One ends of are respectively connected to the plurality of amplifiers, at least some of the portions except for the one end of each of the plurality of antennas are spaced apart from the semiconductor chip, and the output signals constitute one wide area signal.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋Š” ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier)๋“ค์ด๊ณ , ์ƒ๊ธฐ ํŒŒ์›Œ ์ฆํญ๊ธฐ๋“ค ์ค‘ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜๋Š” CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, the plurality of amplifiers are power amplifiers, and at least one of the power amplifiers may be provided using a CMOS process.

์ด ์‹ค์‹œ ์˜ˆ์— ์žˆ์–ด์„œ ์ƒ๊ธฐ ํŒŒ์›Œ ์ฆํญ๊ธฐ๋“ค ๊ฐ๊ฐ์˜ ๋™์ž‘ ์—ฌ๋ถ€๋Š” ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅ ํŒŒ์›Œ์— ๋”ฐ๋ผ ์ œ์–ด๋  ์ˆ˜ ์žˆ๋‹ค. In this embodiment, whether each of the power amplifiers is operated may be controlled according to the output power of the wide area signal.

๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅด๋ฉด, ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์— ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค ๋ฐ ์ฆํญ๊ธฐ๋“ค์ด ๋ฐฐ์น˜๋˜๊ณ , ๊ฐ๊ฐ์˜ ์ €๋ ดํ•œ CMOS๋กœ ๊ตฌํ˜„๋œ ์ฆํญ๊ธฐ๋“ค์€ ์ตœ๋Œ€ ์ถœ๋ ฅ์œผ๋กœ ๋™์ž‘ํ•  ์ˆ˜ ์žˆ์–ด, ๊ณ ํšจ์œจ, ๊ณ ์ง‘์ ํ™” ๋ฐ ์ €๊ฐ€๊ฒฉ์— ์ตœ์ ํ™”๋œ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. According to an embodiment of the present invention, a plurality of bonding wire antennas and amplifiers are disposed on a semiconductor chip, and each of the low cost CMOS implemented amplifiers can operate at maximum output, which is optimized for high efficiency, high integration, and low cost. A communication module can be provided.

๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅด๋ฉด, ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์— ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜๋“ค ๋ฐ ์ฆํญ๊ธฐ๋“ค์ด ๋ฐฐ์น˜๋˜๋˜, ๊ฐ๊ฐ์˜ ์•ˆํ…Œ๋‚˜์—์„œ ์ถœ๋ ฅ๋œ ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ ๊ด‘์—ญ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•  ์ˆ˜ ์žˆ์–ด, ์ฆํญ๊ธฐ๋“ค์€ CMOS๋กœ ๊ตฌํ˜„๋  ์ˆ˜ ์žˆ๋‹ค. ์ด์™€ ๋™์‹œ์—, ๊ฐ๊ฐ์˜ ์ฆํญ๊ธฐ๋“ค์ด ์ตœ๋Œ€ ์ถœ๋ ฅ์œผ๋กœ ๋™์ž‘ํ•  ์ˆ˜ ์žˆ์–ด, ๊ณ ํšจ์œจ, ๊ณ ์ง‘์ ํ™” ๋ฐ ์ €๊ฐ€๊ฒฉ์— ์ตœ์ ํ™”๋œ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. According to an embodiment of the present invention, a plurality of antennas and amplifiers are disposed on a semiconductor chip, and signals output from each antenna may constitute one wide area signal, and thus the amplifiers may be implemented in CMOS. At the same time, each of the amplifiers can operate at maximum output, providing a communication module optimized for high efficiency, high integration and low cost.

๋„ 1์€ ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ์‚ฌ์‹œ๋„์ด๋‹ค. 1 is a perspective view illustrating a bonding wire antenna communication module according to an exemplary embodiment of the present invention.

๋„ 2๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋‹จ๋ฉด๋„์ด๋‹ค.2 is a cross-sectional view illustrating a bonding wire antenna communication module according to an exemplary embodiment of the present invention.

๋„ 3์€ ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ํ‰๋ฉด๋„์ด๋‹ค. 3 is a plan view illustrating a bonding wire antenna communication module according to an exemplary embodiment.

๋„ 4๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์˜ ๋‹ค๋ฅธ ๋ณ€ํ˜• ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋‹จ๋ฉด๋„์ด๋‹ค. 4 is a cross-sectional view illustrating a bonding wire antenna communication module according to another modified example of the embodiment of the present invention.

๋„ 5๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ์‚ฌ์‹œ๋„์ด๋‹ค. 5 is a perspective view illustrating a bonding wire antenna communication module according to another exemplary embodiment of the present disclosure.

๋„ 6์€ ๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋‹จ๋ฉด๋„์ด๋‹ค. 6 is a cross-sectional view illustrating a bonding wire antenna communication module according to another exemplary embodiment of the present invention.

๋„ 7์€ ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋“ค์— ๋”ฐ๋ฅธ ์ ์šฉ ์˜ˆ๋“ค์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋„๋ฉด์ด๋‹ค. 7 is a diagram for describing application examples according to example embodiments.

๋„ 8์€ ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ์‚ฌ์‹œ๋„์ด๋‹ค. 8 is a perspective view illustrating a monopole bonding wire communication module according to an embodiment of the present invention.

๋„ 9๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋‹จ๋ฉด๋„์ด๋‹ค.9 is a cross-sectional view for describing a monopole bonding wire communication module according to an embodiment of the present invention.

๋„ 10์€ ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ํ‰๋ฉด๋„์ด๋‹ค. 10 is a plan view illustrating a monopole bonding wire communication module according to an embodiment of the present invention.

๋„ 11์€ ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์˜ ๋‹ค๋ฅธ ๋ณ€ํ˜• ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋‹จ๋ฉด๋„์ด๋‹ค. 11 is a cross-sectional view illustrating a monopole bonding wire communication module according to another modified example of the embodiment of the present invention.

๋„ 12๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ์‚ฌ์‹œ๋„์ด๋‹ค. 12 is a perspective view illustrating a monopole bonding wire communication module according to another embodiment of the present invention.

๋„ 13์€ ๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋‹จ๋ฉด๋„์ด๋‹ค. 13 is a cross-sectional view illustrating a monopole bonding wire communication module according to another embodiment of the present invention.

๋„ 14๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ์‚ฌ์‹œ๋„์ด๋‹ค. 14 is a perspective view illustrating a monopole bonding wire communication module according to another embodiment of the present invention.

๋„ 15๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ํ‰๋ฉด๋„์ด๋‹ค. 15 is a plan view illustrating a monopole bonding wire communication module according to another embodiment of the present invention.

๋„ 16 ๋ฐ 17์€ ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋“ค์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์‹œ๋ฎฌ๋ ˆ์ด์…˜ํ•œ ๊ฒฐ๊ณผ๋ฅผ ๋‚˜ํƒ€๋‚ด๋Š” ๊ทธ๋ž˜ํ”„์ด๋‹ค.16 and 17 are graphs illustrating simulation results of a monopole bonding wire communication module according to embodiments of the present invention.

๋„ 18์€ ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋„๋ฉด์ด๋‹ค. 18 is a diagram for describing a communication module according to one embodiment of the present invention.

๋„ 19 ๋ฐ ๋„ 20์€ ๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋„๋ฉด๋“ค์ด๋‹ค. 19 and 20 are diagrams for describing a communication module according to another embodiment of the present invention.

๋„ 21 ๋ฐ ๋„ 22๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์‹ค์‹œ์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋„๋ฉด๋“ค์ด๋‹ค.21 and 22 are diagrams for describing a communication module according to another exemplary embodiment of the present invention.

๋„ 23 ๋ฐ ๋„ 24๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋„๋ฉด๋“ค์ด๋‹ค. 23 and 24 are diagrams for describing a communication module according to another example of the present invention.

์ดํ•˜, ์ฒจ๋ถ€๋œ ๋„๋ฉด์„ ์ฐธ์กฐํ•˜์—ฌ ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋ฅผ ์ƒ์„ธํžˆ ์„ค๋ช…ํ•˜๊ธฐ๋กœ ํ•œ๋‹ค. ๊ทธ๋Ÿฌ๋‚˜ ๋ณธ ๋ฐœ๋ช…์€ ์—ฌ๊ธฐ์„œ ์„ค๋ช…๋˜๋Š” ์‹ค์‹œ ์˜ˆ์— ํ•œ์ •๋˜์ง€ ์•Š๊ณ  ๋‹ค๋ฅธ ํ˜•ํƒœ๋กœ ๊ตฌ์ฒดํ™”๋  ์ˆ˜๋„ ์žˆ๋‹ค. ์˜คํžˆ๋ ค, ์—ฌ๊ธฐ์„œ ์†Œ๊ฐœ๋˜๋Š” ์‹ค์‹œ ์˜ˆ๋Š” ๊ฐœ์‹œ๋œ ๋‚ด์šฉ์ด ์ฒ ์ €ํ•˜๊ณ  ์™„์ „ํ•ด ์งˆ ์ˆ˜ ์žˆ๋„๋ก ๊ทธ๋ฆฌ๊ณ  ๋‹น์—…์ž์—๊ฒŒ ๋ณธ ๋ฐœ๋ช…์˜ ์‚ฌ์ƒ์ด ์ถฉ๋ถ„ํžˆ ์ „๋‹ฌ๋  ์ˆ˜ ์žˆ๋„๋ก ํ•˜๊ธฐ ์œ„ํ•ด ์ œ๊ณต๋˜๋Š” ๊ฒƒ์ด๋‹ค. ๋˜ํ•œ, ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๊ฒƒ์ด๊ธฐ ๋•Œ๋ฌธ์—, ์„ค๋ช…์˜ ์ˆœ์„œ์— ๋”ฐ๋ผ ์ œ์‹œ๋˜๋Š” ์ฐธ์กฐ ๋ถ€ํ˜ธ๋Š” ๊ทธ ์ˆœ์„œ์— ๋ฐ˜๋“œ์‹œ ํ•œ์ •๋˜์ง€๋Š” ์•Š๋Š”๋‹ค. ๋„๋ฉด๋“ค์— ์žˆ์–ด์„œ, ๋ง‰ ๋ฐ ์˜์—ญ๋“ค์˜ ๋‘๊ป˜๋Š” ๋ช…ํ™•์„ฑ์„ ๊ธฐํ•˜๊ธฐ ์œ„ํ•˜์—ฌ ๊ณผ์žฅ๋œ ๊ฒƒ์ด๋‹ค. ๋˜ํ•œ, ๋ง‰์ด ๋‹ค๋ฅธ ๋ง‰ ๋˜๋Š” ๊ธฐํŒ์ƒ์— ์žˆ๋‹ค๊ณ  ์–ธ๊ธ‰๋˜๋Š” ๊ฒฝ์šฐ์— ๊ทธ๊ฒƒ์€ ๋‹ค๋ฅธ ๋ง‰ ๋˜๋Š” ๊ธฐํŒ ์ƒ์— ์ง์ ‘ ํ˜•์„ฑ๋  ์ˆ˜ ์žˆ๊ฑฐ๋‚˜ ๋˜๋Š” ๊ทธ๋“ค ์‚ฌ์ด์— ์ œ 3์˜ ๋ง‰์ด ๊ฐœ์žฌ๋  ์ˆ˜๋„ ์žˆ๋‹ค. ๋ณธ ๋ช…์„ธ์„œ์—์„œ '๋ฐ/๋˜๋Š”' ์ด๋ž€ ํ‘œํ˜„์€ ์ „ํ›„์— ๋‚˜์—ด๋œ ๊ตฌ์„ฑ์š”์†Œ๋“ค ์ค‘ ์ ์–ด๋„ ํ•˜๋‚˜๋ฅผ ํฌํ•จํ•˜๋Š” ์˜๋ฏธ๋กœ ์‚ฌ์šฉ๋œ๋‹ค. Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention; However, the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosed contents can be thorough and complete, and enough to convey the spirit of the present invention to those skilled in the art. In addition, since according to the embodiment, reference numerals presented in the order of description are not necessarily limited to the order. In the drawings, the thicknesses of films and regions are exaggerated for clarity. Also, if it is mentioned that the film is on another film or substrate, it may be formed directly on the other film or substrate or a third film may be interposed therebetween. The expression 'and / or' is used herein to include at least one of the components listed before and after.

(๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ)(Bonding wire communication module)

๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์ด ์„ค๋ช…๋œ๋‹ค. A bonding wire communication module according to an embodiment of the present invention is described.

๋„ 1์€ ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ์‚ฌ์‹œ๋„์ด๊ณ , ๋„ 2 ๋Š” ๋„ 1์˜ I-I'๋ฅผ ๋”ฐ๋ผ ์ทจํ•œ ๋‹จ๋ฉด๋„์ด๊ณ , ๋„ 3 ์€ ๋„ 1์˜ ํ‰๋ฉด๋„์ด๋‹ค. 1 is a perspective view illustrating a bonding wire communication module according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line II โ€ฒ of FIG. 1, and FIG. 3 is a plan view of FIG. 1.

๋„ 1, ๋„ 2 ๋ฐ ๋„ 3์„ ์ฐธ์กฐํ•˜๋ฉด, ๊ธฐํŒ(100)์ด ์ œ๊ณต๋œ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100)์€ ํŒจํ‚ค์ง€์šฉ ๊ธฐํŒ์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100)์˜ ํ•˜๋ถ€์— ์ ˆ์—ฐ๋ฌผ์งˆ(134)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100)์˜ ํ•˜๋ถ€์— ์ ‘ํ•ฉ ์ „๊ทน(136)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100)์˜ ํ•˜๋ถ€์— ์ƒ๊ธฐ ์ ‘ํ•ฉ ์ „๊ทน(136)๊ณผ ์—ฐ๊ฒฐ๋œ ์†”๋”๋ณผ(138)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ๋ฐ˜๋„์ฒด์นฉ(200)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ(100) ์‚ฌ์ด์— ์ ‘์ฐฉํŒจ๋“œ(130)๊ฐ€ ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ ‘์ฐฉํŒจ๋“œ(130)๋Š” ๋„์ „๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ด ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ ‘์ฐฉํŒจ๋“œ(130)๋Š” ๊ทธ๋ผ์šด๋“œ์™€ ์—ฐ๊ฒฐ์„ ์œ„ํ•ด ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ด์™€๋Š” ๋‹ฌ๋ฆฌ, ์ƒ๊ธฐ ์ ‘์ฐฉํŒจ๋“œ(130)๋Š” ์ ˆ์—ฐ๋ฌผ์งˆ์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ ‘์ฐฉํŒจ๋“œ(130) ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ์‚ฌ์ด์— ์ ‘์ฐฉ๋ฌผ์งˆ(132)์ด ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์€ ์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ์ƒ๊ธฐ ์ ‘์ฐฉ ๋ฌผ์งˆ(132)์— ์˜ํ•ด ๊ณ ์ •๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์€ ์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ๋ณผ ๊ทธ๋ฆฌ๋“œ ์–ด๋ ˆ์ด ํŒจํ‚ค์ง€ ๊ตฌ์กฐ๋กœ ์‹ค์žฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์€ ์ง‘์ ํšŒ๋กœ๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. 1, 2, and 3, a substrate 100 is provided. The substrate 100 may be a substrate for a package. An insulating material 134 may be disposed under the substrate 100. The junction electrode 136 may be disposed under the substrate 100. Solder balls 138 connected to the junction electrode 136 may be disposed under the substrate 100. The semiconductor chip 200 may be disposed on the substrate 100. An adhesive pad 130 may be interposed between the semiconductor chip 200 and the substrate 100. The adhesive pad 130 may include a conductive material. In this case, the adhesive pad 130 may be used for connection with the ground. In contrast, the adhesive pad 130 may be an insulating material. An adhesive material 132 may be interposed between the adhesive pad 130 and the semiconductor chip 200. The semiconductor chip 200 may be fixed on the substrate 100 by the adhesive material 132. The semiconductor chip 200 may be mounted in a ball grid array package structure on the substrate 100. The semiconductor chip 200 may include an integrated circuit.

์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ์ œ1 ์ ‘์† ํŒจ๋“œ(110)๋“ค ๋ฐ ์ œ2 ์ ‘์† ํŒจ๋“œ(120)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ œ1 ์ ‘์† ํŒจ๋“œ(110)๋“ค ๋ฐ ์ œ2 ์ ‘์† ํŒจ๋“œ(120)๋“ค์€ ๋„์ „์„ฑ์„ ๊ฐ–๋Š” ๋™์ผํ•œ ๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ด์™€๋Š” ๋‹ฌ๋ฆฌ, ์ƒ๊ธฐ ์ œ1 ์ ‘์† ํŒจ๋“œ(110)๋“ค ๋ฐ ์ƒ๊ธฐ ์ œ2 ์ ‘์† ํŒจ๋“œ(120)๋“ค์€ ๋‹ค๋ฅธ ๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ์ƒ๊ธฐ ์ œ2 ์ ‘์† ํŒจ๋“œ(120)๋“ค์€ ์ ˆ์—ฐ์„ฑ์„ ๊ฐ–๋Š” ๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ œ2 ์ ‘์†ํŒจ๋“œ(120)๋“ค์€ ์ƒ๊ธฐ ๊ธฐํŒ(100)๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์ ˆ์—ฐ๋  ์ˆ˜ ์žˆ๋‹ค. First connection pads 110 and second connection pads 120 may be disposed on the substrate 100. The first connection pads 110 and the second connection pads 120 may include the same material having conductivity. Alternatively, the first connection pads 110 and the second connection pads 120 may include other materials. For example, the second connection pads 120 may include an insulating material. The second connection pads 120 may be electrically insulated from the substrate 100.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ์ƒ์— ์ œ1 ๋ณธ๋”ฉ ํŒจ๋“œ(240)๋“ค ๋ฐ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ(245)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(240, 245)์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ๊ฐ€์žฅ ์ž๋ฆฌ์— ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(240, 245)์€ ์ผ์ •ํ•œ ๊ฐ„๊ฒฉ์œผ๋กœ ์ด๊ฒฉ๋˜์–ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(240. 245)์€ ๋„์ „์„ฑ์„ ๊ฐ–๋Š” ๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค.First bonding pads 240 and second bonding pads 245 may be disposed on the semiconductor chip 200. The bonding pads 240 and 245 may be disposed at edges of the semiconductor chip 200. The bonding pads 240 and 245 may be spaced apart at regular intervals. The bonding pads 240 and 245 may include a conductive material.

์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ์ƒ๊ธฐ ์ œ1 ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(240)๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณธ๋”ฉ ์™€์ด์–ด(260)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด(260)๋“ค์€ ์ƒ๊ธฐ ์ œ1 ์ ‘์† ํŒจ๋“œ(110)์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ œ1 ์ ‘์† ํŒจ๋“œ(110)๋Š” ์ƒ๊ธฐ ์†”๋”๋ณผ(138)๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด(260)๋“ค์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ์ง‘์ ํšŒ๋กœ ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ(100)์„ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ์‹œํ‚ฌ ์ˆ˜ ์žˆ๋‹ค.Bonding wires 260 electrically connected to the first bonding pads 240 may be disposed on the substrate 100. The bonding wires 260 may be electrically connected to the first connection pad 110. The first connection pad 110 may be electrically connected to the solder ball 138. The bonding wires 260 may electrically connect the integrated circuit of the semiconductor chip 200 and the substrate 100.

์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ์ƒ๊ธฐ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ(245)๋“ค๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ํ†ต์‹  ๋ชจ๋“ˆ์˜ ์•ˆํ…Œ๋‚˜๋กœ ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ์ƒ๊ธฐ ์ œ2 ์ ‘์† ํŒจ๋“œ(120)์™€ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ๋„๋ฉด์— ๋„์‹œ๋œ ๋ฐ”์™€๋Š” ๋‹ฌ๋ฆฌ, ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ์ƒ๊ธฐ ์ œ2 ์ ‘์† ํŒจ๋“œ(120)์™€ ์—ฐ๊ฒฐ๋˜์ง€ ์•Š์„ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์˜ ๊ธธ์ด๋Š” ์‹ค์งˆ์ ์œผ๋กœ ๋™์ผํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์˜ ๊ธธ์ด๋Š” 0.8mm~1mm ์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•  ์ˆ˜ ์žˆ๋‹ค. ์ผ๋ฐ˜์ ์œผ๋กœ ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” ฮป/4 (ฮป:ํŒŒ์žฅ)์ผ ์ˆ˜ ์žˆ๋‹ค. ๋”ฐ๋ผ์„œ, ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์˜ ๊ธธ์ด๊ฐ€ 0.8mm~1mm์ธ ๊ฒฝ์šฐ, ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์€ 60GHz ๋˜๋Š” 77GHz ๋Œ€์—ญ์˜ ์ฃผํŒŒ์ˆ˜๋ฅผ ์‚ฌ์šฉํ•˜๋Š” ํ†ต์‹  ์‹œ์Šคํ…œ์— ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด(260)์™€ ๋™์ผํ•œ ๊ณต์ •์—์„œ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. A plurality of bonding wire antennas 250 electrically connected to the second bonding pads 245 may be disposed on the substrate 100. The bonding wire antennas 250 may be used as antennas of a communication module. The bonding wire antennas 250 may be connected to the second connection pad 120. Unlike the drawing, the bonding wire antennas 250 may not be connected to the second connection pad 120. The length of the bonding wire antennas 250 may be substantially the same. The length of the bonding wire antenna 250 may be 0.8mm ~ 1mm. The bonding wire antennas 250 may transmit and receive signals. In general, the length of the antenna may be ฮป / 4 (ฮป: wavelength). Therefore, when the length of the bonding wire antenna 250 is 0.8mm ~ 1mm, the communication module according to an embodiment of the present invention can be used in a communication system using a frequency of 60GHz or 77GHz band. The bonding wire antennas 250 may be provided in the same process as the bonding wire 260.

๋„๋ฉด ์ƒ์—๋Š” 4๊ฐœ์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์ด ๋„์‹œ๋˜์—ˆ์ง€๋งŒ, 2~3๊ฐœ ๋˜๋Š” ์ด๋ณด๋‹ค ๋งŽ์€ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๊ฐ€ ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ๋„๋ฉด ์ƒ์—๋Š”, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ์ผ๋ณ€์— ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250)์ด ๋ฐฐ์น˜๋˜์—ˆ์ง€๋งŒ, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ๊ฐ๊ฐ์˜ ๋ณ€์— ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. Although four bonding wire antennas 250 are shown in the figure, two to three or more bonding wire antennas may be disposed. Although the bonding wire antennas 250 are disposed on one side of the semiconductor chip 200, bonding wire antennas may be disposed on each side of the semiconductor chip 200.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์€ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(230)๋“ค์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค์€ ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier) ๋ฐ ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Amplifier) ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier)๋Š” ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์ด ์‹ ํ˜ธ๋ฅผ ์†ก์‹ ํ•˜๊ธฐ ์œ„ํ•ด ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Amplifier)๋Š” ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์ด ์‹ ํ˜ธ๋ฅผ ์ˆ˜์‹ ํ•˜๊ธฐ ์œ„ํ•ด ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜์˜ ์ฆํญ๊ธฐ๋Š” CMOS๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. The semiconductor chip 200 may include a plurality of amplifiers 230. The amplifiers 230 may include at least one of a power amplifier and a low noise amplifier. The power amplifier may be used for the bonding wire antennas 250 to transmit a signal. The low noise amplifier may be used for the bonding wire antennas 250 to receive a signal. At least one of the amplifiers 230 may be provided using a CMOS process.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์€ ์†ก์ˆ˜์‹ ๋ถ€(210)๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(210)๋Š” ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค ๋ฐ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(210) ์‚ฌ์ด์— ์Šค์œ„์น˜(220)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์Šค์œ„์น˜(220)๋“ค์€ ํŠธ๋žœ์ง€์Šคํ„ฐ๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. The semiconductor chip 200 may include a transceiver 210. The transceiver 210 may be electrically connected to the amplifiers 230. Switches 220 may be disposed between the amplifiers 230 and the transceiver 210. The switches 220 may include transistors.

์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(210)๋กœ๋ถ€ํ„ฐ ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค๋กœ ์‹ ํ˜ธ๋“ค์ด ์ž…๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค๋กœ ์ž…๋ ฅ๋œ ์‹ ํ˜ธ๋“ค์€ ์ƒ๊ธฐ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ(245)๋“ค์„ ๊ฒฝ์œ ํ•˜์—ฌ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์—์„œ ์ถœ๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ด ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค์€ ํŒŒ์›Œ ์ฆํญ๊ธฐ(PA)์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)์—์„œ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์ด ์ถœ๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์ด ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋„๋ก, ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(210)์—์„œ ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค๋กœ ์ž…๋ ฅ๋˜๋Š” ์‹ ํ˜ธ์˜ ์œ„์ƒ์€ ๋™์ผํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์ด ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ€์ง์œผ๋กœ์จ, ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์€ ์„œ๋กœ ๋ณด๊ฐ• ๊ฐ„์„ญ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์ด ํ•ฉ์ณ์ ธ, ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๊ฐ€ ๊ตฌ์„ฑ๋  ์ˆ˜ ์žˆ๋‹ค. Signals may be input from the transceiver 210 to the amplifiers 230. The signals input to the amplifiers 230 may be output from the bonding wire antennas 250 via the second bonding pads 245. In this case, the amplifiers 230 may be power amplifiers PA. Output signals 10, 20, 30, and 40 may be output from the bonding wire antenna 250. The phase of the signal input from the transceiver 210 to the amplifiers 230 may be the same so that the output signals 10, 20, 30, and 40 have the same phase. As the output signals 10, 20, 30, and 40 have the same phase, the output signals 10, 20, 30, and 40 may constructively interfere with each other. The output signals 10, 20, 30, and 40 are combined to form one wide area signal.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์ด CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋œ ํ•˜๋‚˜์˜ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋Š” ๊ฒฝ์šฐ, ์ฆํญ๊ธฐ์˜ ์ถœ๋ ฅํŒŒ์›Œ์— ์˜ํ•œ ์ œ์•ฝ์œผ๋กœ, ์ฆํญ๊ธฐ์˜ ์‹ ๋ขฐ์„ฑ์ด ์ €ํ•˜๋  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋œ ์ฆํญ๊ธฐ์˜ ๊ฒฝ์šฐ ํ•ซ ์บ๋ฆฌ์–ด ์ดํŽ™ํŠธ(Hot Carrier Effect) ๋“ฑ์— ์˜ํ•œ ์ œ์•ฝ์œผ๋กœ, ์‹ ๋ขฐ์„ฑ์„ ๊ฐ€์ง€๊ณ  ์‚ฌ์šฉํ•  ์ˆ˜ ์žˆ๋Š” ์ถœ๋ ฅ ํŒŒ์›Œ๋Š” 10dBm ๋‚ด์™ธ ์ผ ์ˆ˜ ์žˆ๋‹ค. ์ด์— ๋”ฐ๋ผ, CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋œ ์ฆํญ๊ธฐ๋Š” 30dBm ๋‚ด์™ธ์˜ ์ถœ๋ ฅ ํŒŒ์›Œ๋ฅผ ์š”๊ตฌํ•˜๋Š” ํ†ต์‹  ์‹œ์Šคํ…œ์— ์‚ฌ์šฉ๋  ์ˆ˜ ์—†๋Š” ์ œ์•ฝ์ด ์žˆ๋‹ค. ์ด์— ๋”ฐ๋ผ, ์ข…๋ž˜ 30dBm ๋‚ด์™ธ์˜ ์ถœ๋ ฅ ํŒŒ์›Œ๋ฅผ ์š”๊ตฌํ•˜๋Š” ํ†ต์‹  ์‹œ์Šคํ…œ์—์„œ๋Š” ํ™”ํ•ฉ๋ฌผ ๋ฐ˜๋„์ฒด๋กœ ๊ตฌํ˜„๋œ ์ฆํญ๊ธฐ๊ฐ€ ์‚ฌ์šฉ๋˜์—ˆ๋‹ค. ๋‹ค๋งŒ, ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅด๋ฉด, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์ด ๊ฐ๊ฐ ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ–๋Š” ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์„ ์ถœ๋ ฅํ•˜์—ฌ ํ•˜๋‚˜์˜ ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•จ์œผ๋กœ์จ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค์˜ ๊ฐ๊ฐ์˜ ์ถœ๋ ฅํŒŒ์›Œ๋“ค์€, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ์ƒ์— ํ•˜๋‚˜์˜ ์ฆํญ๊ธฐ๊ฐ€ ๋ฐฐ์น˜๋˜๋Š” ๊ฒฝ์šฐ์™€ ๋น„๊ตํ•˜์—ฌ, ์ž‘์„ ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์ด 10dBm ์˜ ์ถœ๋ ฅ ํŒŒ์›Œ๋ฅผ ๊ฐ–๋Š” CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋œ 6๊ฐœ์˜ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋Š” ๊ฒฝ์šฐ, ๊ฐ๊ฐ์˜ ์ฆํญ๊ธฐ๊ฐ€ ์ถœ๋ ฅํ•˜๋Š” 10dBm์˜ ์ถœ๋ ฅ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ 28dBm ๋‚ด์™ธ์˜ ๊ณ ์ถœ๋ ฅ ๊ด‘์—ญ ์‹ ํ˜ธ๋กœ ํ•ฉ์ณ์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ด์— ๋”ฐ๋ผ, 28dBm์˜ ์ถœ๋ ฅํŒŒ์›Œ๋ฅผ ๊ฐ–๋Š” ์ฆํญ๊ธฐ ๋ฐฐ์น˜๋œ ๊ฒƒ๊ณผ ๋™์ผํ•œ ํšจ๊ณผ๋ฅผ ํ˜„์ถœํ•  ์ˆ˜ ์žˆ๋‹ค. ๋”ฐ๋ผ์„œ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค์€ ํ™”ํ•ฉ๋ฌผ ๋ฐ˜๋„์ฒด๋กœ ๊ตฌํ˜„๋  ์ˆ˜ ์žˆ์Œ์€ ๋ฌผ๋ก , ๊ฐ€๊ฒฉ์ด ์ €๋ ดํ•œ CMOS๋กœ ๊ตฌํ˜„๋  ์ˆ˜๋„ ์žˆ์–ด, ์ €๋ ดํ•œ ๊ฐ€๊ฒฉ์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. When the semiconductor chip 200 includes one amplifier provided by using a CMOS process, the reliability of the amplifier may be degraded due to the constraint of the output power of the amplifier. For example, in the case of an amplifier provided using a CMOS process, the output power that can be used with reliability may be about 10 dBm due to constraints such as a hot carrier effect. Accordingly, there is a limitation that amplifiers provided using CMOS processes cannot be used in communication systems that require output powers of around 30 dBm. Accordingly, in a communication system requiring an output power of about 30 dBm, an amplifier implemented with a compound semiconductor has been used. However, according to an exemplary embodiment of the present disclosure, the plurality of bonding wire antennas 250 output the output signals 10, 20, 30, and 40 each having the same phase to form one wide area signal. Each of the output powers of the amplifiers 230 may be smaller than the case where one amplifier is disposed on the semiconductor chip 200. For example, if the semiconductor chip 200 includes six amplifiers provided by using a CMOS process having an output power of 10 dBm, the output signals of 10 dBm output by each amplifier are about 28 dBm high power wide area signals. Can be combined. Accordingly, the same effect as that of the amplifier arrangement having an output power of 28 dBm can be exhibited. Therefore, the amplifiers 230 may be implemented as a compound semiconductor, as well as inexpensive CMOS, a low-cost bonding wire antenna communication module can be provided.

์ผ๋ฐ˜์ ์œผ๋กœ ํ†ต์‹  ๋ชจ๋“ˆ์— ํฌํ•จ๋œ ์ฆํญ๊ธฐ๋ฅผ ์„ค๊ณ„ํ•˜๋Š” ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋Š” ํ†ต์‹  ๋ชจ๋“ˆ์˜ ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ์— ์ƒ์‘ํ•˜๋Š” ์ถœ๋ ฅํŒŒ์›Œ๋ฅผ ๊ฐ–๋„๋ก ์„ค๊ณ„๋œ๋‹ค. ์ด์— ๋”ฐ๋ผ, ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ์—์„œ ์ตœ๊ณ  ํšจ์œจ์„ ๋‚˜ํƒ€๋‚ด๋Š” ์ฆํญ๊ธฐ์˜ ํŠน์„ฑ์ƒ, ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ์— ๋น„ํ•˜์—ฌ ๋‚ฎ์€ ์ถœ๋ ฅํŒŒ์›Œ๋กœ ๋™์ž‘ํ•˜๋Š” ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ์˜ ํšจ์œจ์ด ๋‚ฎ์•„์งˆ ์ˆ˜ ์žˆ๋‹ค. ๋ฐ˜๋ฉด, ๋ณธ ๋ฐœ๋ช…์— ๋”ฐ๋ฅด๋ฉด, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ์ƒ์— ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(210) ๋ฐ ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค์„ ์—ฐ๊ฒฐํ•˜๋Š” ์Šค์œ„์น˜(220)๋“ค์ด ๋ฐฐ์น˜๋จ์œผ๋กœ์จ, ์ƒ๊ธฐ ๊ฐ๊ฐ์˜ ์ฆํญ๊ธฐ(230)๋“ค์˜ ๋™์ž‘ ์—ฌ๋ถ€๊ฐ€ ์ œ์–ด๋  ์ˆ˜ ์žˆ๋‹ค. ๋”ฐ๋ผ์„œ, ํ•„์š”ํ•œ ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅ์˜ ์„ธ๊ธฐ์— ๋”ฐ๋ผ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค์˜ ๋™์ž‘์ด ์ƒ๊ธฐ ์Šค์œ„์น˜(220)์— ์˜ํ•ด ์กฐ์ ˆ๋  ์ˆ˜ ์žˆ๋‹ค. ์ฆ‰, ๊ฐ๊ฐ์˜ ์ฆํญ๊ธฐ๋“ค์˜ ๋™์ž‘ ์—ฌ๋ถ€๋ฅผ ์ œ์–ดํ•˜์—ฌ, ํ†ต์‹  ๋ชจ๋“ˆ์ด ํ•„์š”๋กœ ํ•˜๋Š” ์ถœ๋ ฅ์‹ ํ˜ธ์˜ ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ๋ฅผ ๊ตฌํ˜„ํ•  ์ˆ˜ ์žˆ์–ด, ์ตœ๋Œ€ ์ถœ๋ ฅ ํŒŒ์›Œ๋ณด๋‹ค ๋‚ฎ์€ ์ถœ๋ ฅ ํŒŒ์›Œ๋กœ ํ†ต์‹  ๋ชจ๋“ˆ์ด ๋™์ž‘ํ•˜๋Š” ๊ฒฝ์šฐ์—๋„, ๊ฐ๊ฐ์˜ ์ฆํญ๊ธฐ๋“ค์€ ์ตœ๋Œ€์˜ ์ถœ๋ ฅ ํŒŒ์›Œ๋ฅผ ๊ฐ€์ง€๊ณ  ๋™์ž‘ํ•  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ํ•„์š”ํ•œ ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์„ธ๊ธฐ๊ฐ€ 28dBm์ด๊ณ , ๊ฐ๊ฐ์˜ ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230)์ด ์ตœ๋Œ€ ์ถœ๋ ฅ์ด 10dBm์ด๊ณ , ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์ด 8๊ฐœ์˜ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋Š” ๊ฒฝ์šฐ, ์ƒ๊ธฐ 8๊ฐœ์˜ ์ฆํญ๊ธฐ ์ค‘์—์„œ 6๊ฐœ์˜ ์ฆํญ๊ธฐ๋“ค์ด 10dBm๋กœ ๋™์ž‘ํ•˜์—ฌ, 28dBm์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ์ถœ๋ ฅํ•  ์ˆ˜ ์žˆ๋‹ค. ํ†ต์‹  ๋ชจ๋“ˆ์—์„œ ํ•„์š”ํ•œ ์ถœ๋ ฅํŒŒ์›Œ์— ๋”ฐ๋ผ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค์€ ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ๋กœ ๋™์ž‘ํ•  ์ˆ˜ ์žˆ๋‹ค. ์ด์— ๋”ฐ๋ผ, ๋ณต์ˆ˜๊ฐœ์˜ ์ฆํญ๊ธฐ ์ค‘์—์„œ ๋™์ž‘ํ•˜๋Š” ์ฆํญ๊ธฐ๋“ค์€ ์ตœ๊ณ  ํšจ์œจ์—์„œ ๋™์ž‘ํ•  ์ˆ˜ ์žˆ๊ณ , ๋”ฐ๋ผ์„œ, ๊ณ ํšจ์œจ์— ์ตœ์ ํ™”๋œ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. In general, when designing an amplifier included in the communication module, the amplifier is designed to have an output power corresponding to the maximum output power of the communication module. Accordingly, when the communication module operates at a lower output power than the maximum output power, the efficiency of the amplifier may be lowered due to the characteristics of the amplifier having the highest efficiency at the maximum output power. On the other hand, according to the present invention, the switch 220 for connecting the transceiver 210 and the amplifier 230 is disposed on the semiconductor chip 200, the operation of each of the amplifier 230 is controlled Can be. Thus, depending on the strength of the output of the wide area signal required, the operation of the amplifiers 230 may be adjusted by the switch 220. That is, by controlling the operation of each of the amplifiers, it is possible to implement the maximum output power of the output signal required by the communication module, even if the communication module operates at an output power lower than the maximum output power, each amplifier is the maximum It can operate with output power of. For example, if the strength of the wide-area signal required is 28 dBm, each of the amplifiers 230 has a maximum output of 10 dBm, and the semiconductor chip 200 includes eight amplifiers, six of the eight amplifiers. Amplifiers operate at 10dBm, capable of outputting a wide range signal of 28dBm. Depending on the output power required by the communication module, the amplifiers 230 may operate at maximum output power. Accordingly, the amplifiers operating among the plurality of amplifiers can operate at the highest efficiency, and thus a communication module optimized for high efficiency can be provided.

์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์„ ํ†ตํ•ด ์‹ ํ˜ธ๋“ค์ด ์ˆ˜์‹ ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์—์„œ ์ˆ˜์‹ ๋œ ์‹ ํ˜ธ๋“ค์€ ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค์„ ๊ฑฐ์ณ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(210)๋กœ ์ž…๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ด ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค์€ ์ €์žก์Œ ์ฆํญ๊ธฐ(LNA)์ผ ์ˆ˜ ์žˆ๋‹ค. Signals may be received through the bonding wire antennas 250. Signals received by the bonding wire antennas 250 may be input to the transceiver 210 through the amplifiers 230. In this case, the amplifiers 230 may be low noise amplifiers (LNAs).

๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์˜ ๋ณ€ํ˜• ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์ด ์„ค๋ช…๋œ๋‹ค. A bonding wire communication module according to a variation of an embodiment of the present invention is described.

๋„ 1์„ ๋‹ค์‹œ ์ฐธ์กฐํ•˜๋ฉด, ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ์ผ์ •ํ•œ ๊ฐ„๊ฒฉ์œผ๋กœ ์ด๊ฒฉ๋˜์–ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ฮป/2 (ฮป: ๋ณธ ๋ฐœ๋ช…์ด ์‚ฌ์šฉ๋˜๋Š” ํ†ต์‹  ์ฃผํŒŒ์ˆ˜์˜ ํŒŒ์žฅ)์˜ ๊ฐ„๊ฒฉ์„ ๊ฐ€์ง€๊ณ , ์ผ์ •ํ•˜๊ฒŒ ์ด๊ฒฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(210) ๋‚ด๋ถ€์—๋Š” ์œ„์‚ฐ ์ฒœ์ด(phase shift)๋ฅผ ํ†ตํ•˜์—ฌ ์‹ ํ˜ธ๋ฅผ ์ง€์—ฐ์‹œํ‚ค๊ณ , ์ƒ๊ธฐ ์ง€์—ฐ๋œ ์‹ ํ˜ธ๋“ค์„ ์ค‘์ฒฉํ•˜๋Š” ๊ธฐ๋Šฅ ๋ธ”๋Ÿญ๋“ค์ด ๊ตฌ๋น„๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(210)์—์„œ ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค๋กœ ์ž…๋ ฅ๋˜๋Š” ์‹ ํ˜ธ๋“ค์˜ ์œ„์ƒ์€ ์ƒ์ดํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค๋กœ ์ž…๋ ฅ๋˜๋Š” ์‹ ํ˜ธ๋“ค์€ ๊ฐ๊ฐ ์ผ์ •ํ•œ ์œ„์ƒ์˜ ์ฐจ์ด๋ฅผ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์˜ ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์˜ ์œ„์ƒ์€ ๊ฐ๊ฐ ์ผ์ •ํ•œ ์ฐจ์ด๋ฅผ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์€ ๊ฐ๊ฐ 45ยฐ์˜ ์œ„์ƒ์ฐจ์ด๋ฅผ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ด๋กœ์จ, ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ๋น”ํฌ๋ฐ(Beamfirming)์— ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. Referring back to FIG. 1, the bonding wire antennas 250 may be spaced apart at regular intervals. For example, the bonding wire antennas 250 may be spaced at regular intervals with an interval of ฮป / 2 (ฮป: wavelength of a communication frequency in which the present invention is used). In the transceiver 210, functional blocks may be provided to delay a signal through a phase shift and overlap the delayed signals. The phases of the signals input to the amplifiers 230 from the transceiver 210 may be different. Signals input to the amplifiers 230 may each have a constant phase difference. Phases of the output signals 10, 20, 30, and 40 of the bonding wire antennas 250 may have a predetermined difference. For example, the output signals 10, 20, 30, and 40 may each have a phase difference of 45 ยฐ. As a result, the bonding wire antennas 250 may be used for beamforming.

๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์˜ ๋‹ค๋ฅธ ๋ณ€ํ˜• ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์ด ์„ค๋ช…๋œ๋‹ค. A bonding wire communication module according to another modification of an embodiment of the present invention is described.

๋„ 4๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์˜ ๋‹ค๋ฅธ ๋ณ€ํ˜• ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋‹จ๋ฉด๋„์ด๋‹ค. ๋„ 2 ์˜ ๋ถ€ํ˜ธ์™€ ๋™์ผํ•œ ๋ถ€ํ˜ธ๋Š” ๋™์ผํ•œ ๊ตฌ์„ฑ์— ํ•ด๋‹นํ•œ๋‹ค. 4 is a cross-sectional view illustrating a bonding wire communication module according to another modified example of the embodiment of the present invention. The same code | symbol as the code | symbol of FIG. 2 corresponds to the same structure.

๋„ 4๋ฅผ ์ฐธ์กฐํ•˜๋ฉด, ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ํ•˜๋ถ€ ๋ฐ ๊ธฐํŒ(100)์˜ ์ƒ๋ถ€์— ๋„์ „ ํŒจ๋“œ(124)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ๋„์ „ ํŒจ๋“œ(124)๋“ค๊ณผ ์ƒ๊ธฐ ๊ธฐํŒ(100)์˜ ๋„์ „ ํŒจ๋“œ(124)๋“ค ์‚ฌ์ด์— ๋ฒ”ํ”„(126)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100) ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ์‚ฌ์ด์˜ ๊ณต๊ฐ„์€ ์–ธ๋”ํ•„(122)๋กœ ์ฑ„์›Œ์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์–ธ๋”ํ•„(122)์€ ์—ํญ์‹œ๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ์ง‘์ ํšŒ๋กœ๋Š” ์ƒ๊ธฐ ๊ธฐํŒ(100)๊ณผ ์ƒ๊ธฐ ๋„์ „ ํŒจ๋“œ(124)๋“ค ๋ฐ ์ƒ๊ธฐ ๋ฒ”ํ”„(126)์„ ํ†ตํ•˜์—ฌ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. Referring to FIG. 4, conductive pads 124 may be disposed below the semiconductor chip 200 and above the substrate 100. Bumps 126 may be disposed between the conductive pads 124 of the semiconductor chip 200 and the conductive pads 124 of the substrate 100. The space between the substrate 100 and the semiconductor chip 200 may be filled with an underfill 122. The underfill 122 may include an epoxy. The integrated circuit of the semiconductor chip 200 may be electrically connected to the substrate 100 through the conductive pads 124 and the bump 126.

์ƒ๊ธฐ ๋ฒ”ํ”„(126)๋“ค์„ ์ด์šฉํ•˜์—ฌ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ(100)์ด ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋จ์œผ๋กœ์จ, ๋ณธ๋”ฉ ์™€์ด์–ด๋“ค์ด ์ƒ๋žต๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ์ƒ์— ๋ฐฐ์น˜๋œ ๋ณธ๋”ฉ ํŒจ๋“œ(240)๋“ค์—๋Š” ๋ณต์ˆ˜๊ฐœ์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์ด ๊ฐ๊ฐ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ์†ก์ˆ˜์‹ ๋ถ€ ๋ฐ ์ฆํญ๊ธฐ๋“ค๊ณผ ์—ฐ๊ฒฐ๋˜์–ด, ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•  ์ˆ˜ ์žˆ๋‹ค. Since the semiconductor chip 200 and the substrate 100 are electrically connected using the bumps 126, bonding wires may be omitted. A plurality of bonding wire antennas 250 may be connected to the bonding pads 240 disposed on the semiconductor chip 200, respectively. The plurality of bonding wire antennas 250 may be connected to a transceiver and amplifiers of the semiconductor chip 200 to transmit and receive a signal.

๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์ด ์„ค๋ช…๋œ๋‹ค. A bonding wire communication module according to another embodiment of the present invention is described.

๋„ 5๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ์‚ฌ์‹œ๋„์ด๋‹ค. ๋„ 6์€ ๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋‹ค๋ฅธ ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•ด ๋„ 5์˜ II-II'๋ฅผ ๋”ฐ๋ผ ์ทจํ•œ ๋‹จ๋ฉด๋„์ด๋‹ค. ๋„ 1์˜ ๋ถ€ํ˜ธ์™€ ๋™์ผํ•œ ๋ถ€ํ˜ธ๋Š” ๋™์ผํ•œ ๊ตฌ์„ฑ์— ํ•ด๋‹นํ•œ๋‹ค. 5 is a perspective view illustrating a bonding wire communication module according to another embodiment of the present invention. 6 is a cross-sectional view taken along line II-II 'of FIG. 5 to describe another bonding wire communication module according to another embodiment of the present invention. The same code | symbol as the code | symbol of FIG. 1 corresponds to the same structure.

๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ๋Š” ๋ณต์ˆ˜์˜ ์นฉ์ด ์ ์ธต๋œ ํŒจํ‚ค์ง€ ๊ตฌ์กฐ์— ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ ์šฉ๋œ ๊ฒฝ์šฐ์ด๋‹ค. Another embodiment of the present invention is a case in which a communication module according to an embodiment of the present invention is applied to a package structure in which a plurality of chips are stacked.

๋„ 5 ๋ฐ ๋„ 6์„ ์ฐธ์กฐํ•˜๋ฉด, ๊ธฐํŒ(100) ๋ฐ ๋ฐ˜๋„์ฒด์นฉ(200) ์‚ฌ์ด์— ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(300, 400)์ด ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ๋ฐ ์ƒ๊ธฐ ์ œ1 ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ(300) ์‚ฌ์ด์— ์ ‘์ฐฉ๋ฌผ์งˆ(132)์ด ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ œ1 ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด์นฉ(300) ๋ฐ ์ƒ๊ธฐ ์ œ2 ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ(400) ์‚ฌ์ด์— ์ œ1 ์ถ”๊ฐ€ ์ ‘์ฐฉ ๋ฌผ์งˆ(340)์ด ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ œ2 ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ(400) ๋ฐ ์ ˆ์—ฐ๋ง‰(130) ์‚ฌ์ด์— ์ œ2 ์ถ”๊ฐ€ ์ ‘์ฐฉ ๋ฌผ์งˆ(440)์ด ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. 5 and 6, additional semiconductor chips 300 and 400 may be interposed between the substrate 100 and the semiconductor chip 200. An adhesive material 132 may be interposed between the semiconductor chip 200 and the first additional semiconductor chip 300. A first additional adhesive material 340 may be interposed between the first additional semiconductor chip 300 and the second additional semiconductor chip 400. A second additional adhesive material 440 may be interposed between the second additional semiconductor chip 400 and the insulating layer 130.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(200, 300, 400) ์ƒ์— ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(240, 245, 340, 440)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(240, 245, 340, 440)์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(200, 300, 400)์˜ ๊ฐ€์žฅ ์ž๋ฆฌ์— ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. Bonding pads 240, 245, 340, and 440 may be disposed on the semiconductor chips 200, 300, and 400. The bonding pads 240, 245, 340, and 440 may be disposed at edges of the semiconductor chips 200, 300, and 400.

์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(300, 400) ์ƒ์— ๋ฐฐ์น˜๋œ ์ถ”๊ฐ€ ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(340, 440)๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ์ถ”๊ฐ€ ๋ณธ๋”ฉ ์™€์ด์–ด๋“ค(360, 460)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ณธ๋”ฉ ์™€์ด์–ด๋“ค(360, 460)์€ ์ ‘์† ํŒจ๋“œ๋“ค(110, 120)๊ณผ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ณธ๋”ฉ ์™€์ด์–ด๋“ค(360, 460)์€ ์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(300, 400) ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ(100)์„ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ์‹œํ‚ฌ ์ˆ˜ ์žˆ๋‹ค. Additional bonding wires 360 and 460 electrically connected to the additional bonding pads 340 and 440 disposed on the additional semiconductor chips 300 and 400 may be disposed. The additional bonding wires 360 and 460 may be connected to the connection pads 110 and 120. The additional bonding wires 360 and 460 may electrically connect the additional semiconductor chips 300 and 400 and the substrate 100.

๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250)์˜ ๊ธธ์ด๋Š”, ์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ(300, 400)์ด ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ(100) ์‚ฌ์ด์— ๊ฐœ์žฌ๋˜์ง€ ์•Š์€ ๊ฒฝ์šฐ์™€ ๋น„๊ตํ•˜์—ฌ, ๊ธธ์–ด์งˆ ์ˆ˜ ์žˆ๋‹ค. ๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์€, ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์‚ฌ์šฉ๋˜๋Š” ์ฃผํŒŒ์ˆ˜ ๋Œ€์—ญ์˜ ํ†ต์‹  ์‹œ์Šคํ…œ๋ณด๋‹ค, ๋‚ฎ์€ ์ฃผํŒŒ์ˆ˜ ๋Œ€์—ญ์˜ ํ†ต์‹  ์‹œ์Šคํ…œ์— ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. The length of the bonding wire antennas 250 may be longer than in the case where the additional semiconductor chips 300 and 400 are not interposed between the semiconductor chip 200 and the substrate 100. The communication module according to another embodiment of the present invention may be used in a communication system of a lower frequency band than a communication system of a frequency band in which the communication module according to an embodiment of the present invention is used.

์ด์™€๋Š” ๋‹ฌ๋ฆฌ, ์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(300, 400)๊ณผ ์—ฐ๊ฒฐ๋œ ์ถ”๊ฐ€ ๋ณธ๋”ฉ ์™€์ด์–ด๋“ค(360, 460)์˜ ์ผ๋ถ€๊ฐ€ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋กœ ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. Alternatively, some of the additional bonding wires 360 and 460 connected to the additional semiconductor chips 300 and 400 may be used as the bonding wire antennas.

๋„ 7์€ ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋“ค์ด ์ ์šฉ ์˜ˆ๋ฅผ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋„๋ฉด์ด๋‹ค. 7 is a view for explaining an application example embodiments of the present invention.

๋„ 7์„ ์ฐธ์กฐํ•˜๋ฉด, ํ•ธ๋“œํฐ(1100), MP3 ํ”Œ๋ ˆ์ด์–ด(1200), ์นด๋ฉ”๋ผ(1300), DVD(1400), TV(1500), PC(1600) ๋ฐ ์Šคํ”ผ์ปค(1700)๋“ฑ์— ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋“ค์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์ด ํฌํ•จ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์—ด๊ฑฐ๋œ ์ „์ž ๊ธฐ๊ธฐ๋“ค์ด ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋“ค์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์„ ํฌํ•จํ•˜๊ณ  ์žˆ์–ด, ๊ฐ๊ฐ์˜ ์ „์ž ๊ธฐ๊ธฐ ์‚ฌ์ด์— ๋ฌด์„  ๋„คํŠธ์›Œํฌ๊ฐ€ ๊ตฌ์ถ•๋  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ์ƒ๊ธฐ ํ•ธ๋“œํฐ(1100) ๋ฐ ์ƒ๊ธฐ TV(1500)์€ ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋“ค์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์„ ํฌํ•จํ•˜๊ณ  ์žˆ์–ด, ์ƒ๊ธฐ ํ•ธ๋“œํฐ(1100) ๋ฐ ์ƒ๊ธฐ TV(1500) ์‚ฌ์ด์— ๋Œ€์šฉ๋Ÿ‰ ๋ฐ์ดํ„ฐ ํŒŒ์ผ(์˜ˆ๋ฅผ ๋“ค์–ด, ๋™์˜์ƒ ํŒŒ์ผ)์ด ๋ฌด์„ ์œผ๋กœ ๊ตํ™˜๋  ์ˆ˜ ์žˆ๋‹ค. ๋˜ ๋‹ค๋ฅธ ์˜ˆ๋ฅผ ๋“ค๋ฉด, ์ƒ๊ธฐ ์นด๋ฉ”๋ผ(1300) ๋ฐ ์ƒ๊ธฐ PC(1600) ์‚ฌ์ด์— ์ด๋ฏธ์ง€ ํŒŒ์ผ๋“ค์ด ์ƒํ˜ธ ๊ตํ™˜๋  ์ˆ˜ ์žˆ๊ณ , ์ƒ๊ธฐ ์Šคํ”ผ์ปค(1700) ๋ฐ ์ƒ๊ธฐ MP3 ํ”Œ๋ ˆ์ด์–ด(1200) ์‚ฌ์ด์— ์‚ฌ์šด๋“œ ํŒŒ์ผ์ด ๊ตํ™˜๋˜์–ด, ์ƒ๊ธฐ MP3 ํ”Œ๋ ˆ์ด์–ด(1200)์— ๋‚ด์žฌ๋œ ์‚ฌ์šด๋“œ๊ฐ€ ์ƒ๊ธฐ ์Šคํ”ผ์ปค(1700)๋ฅผ ํ†ตํ•ด ์ถœ๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. Referring to FIG. 7, a mobile phone 1100, an MP3 player 1200, a camera 1300, a DVD 1400, a TV 1500, a PC 1600, a speaker 1700, and the like according to embodiments of the present disclosure may be used. Modules may be included. Since the electronic devices listed above include a communication module according to embodiments of the present invention, a wireless network may be established between each electronic device. For example, the mobile phone 1100 and the TV 1500 include a communication module according to embodiments of the present invention, so that a large data file (for example, between the mobile phone 1100 and the TV 1500) is provided. , Video files) can be exchanged wirelessly. In another example, image files may be exchanged between the camera 1300 and the PC 1600, and a sound file may be exchanged between the speaker 1700 and the MP3 player 1200, so that the MP3 may be exchanged. Sound inherent in the player 1200 may be output through the speaker 1700.

ํŠนํžˆ, ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋“ค์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์€ ๊ณ ์ง‘์ ํ™” ๋ฐ ๊ณ ํšจ์œจ์— ์ตœ์ ํ™”๋˜์–ด, ์ƒ๊ธฐ ํ•ธ๋“œํฐ(1100) ๋ฐ ์ƒ๊ธฐ MP3 ํ”Œ๋ ˆ์ด์–ด(1200)์™€ ๊ฐ™์€ ํœด๋Œ€์šฉ ์ „์ž๊ธฐ๊ธฐ์— ์ ๊ทน ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. In particular, the communication module according to the embodiments of the present invention may be optimized for high integration and high efficiency, and may be actively used in portable electronic devices such as the mobile phone 1100 and the MP3 player 1200.

(๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ)(Monopole Bonding Wire Communication Module)

๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์ด ์„ค๋ช…๋œ๋‹ค. A monopole bonding wire communication module according to an embodiment of the present invention is described.

๋„ 8์€ ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ์‚ฌ์‹œ๋„์ด๊ณ , ๋„ 9๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•ด ๋„ 8์˜ I-I'๋ฅผ ๋”ฐ๋ผ ์ทจํ•œ ๋‹จ๋ฉด๋„์ด๊ณ , ๋„ 10 ์€ ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ํ‰๋ฉด๋„์ด๋‹ค. FIG. 8 is a perspective view illustrating a monopole bonding wire communication module according to an embodiment of the present invention, and FIG. 9 is a line II โ€ฒ of FIG. 8 illustrating a monopole bonding wire communication module according to an embodiment of the present invention. 10 is a cross-sectional view taken along the line, and FIG. 10 is a plan view illustrating a monopole bonding wire communication module according to an exemplary embodiment of the present invention.

๋„ 8, ๋„ 9 ๋ฐ ๋„ 10์„ ์ฐธ์กฐํ•˜๋ฉด, ๊ธฐํŒ(100)์ด ์ œ๊ณต๋œ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100)์€ ํŒจํ‚ค์ง€์šฉ ๊ธฐํŒ์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100)์˜ ํ•˜๋ถ€์— ์ ˆ์—ฐ๋ฌผ์งˆ(134)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100)์˜ ํ•˜๋ถ€์— ์ ‘ํ•ฉ ์ „๊ทน(136)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100)์˜ ํ•˜๋ถ€์— ์ƒ๊ธฐ ์ ‘ํ•ฉ ์ „๊ทน(136)๊ณผ ์—ฐ๊ฒฐ๋œ ์†”๋”๋ณผ(138)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ๋ฐ˜๋„์ฒด์นฉ(200)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ(100) ์‚ฌ์ด์— ์ ‘์ฐฉํŒจ๋“œ(130)๊ฐ€ ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ ‘์ฐฉํŒจ๋“œ(130)๋Š” ๋„์ „๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ด ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ ‘์ฐฉํŒจ๋“œ(130)๋Š” ๊ทธ๋ผ์šด๋“œ์™€ ์—ฐ๊ฒฐ์„ ์œ„ํ•ด ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ด์™€๋Š” ๋‹ฌ๋ฆฌ, ์ƒ๊ธฐ ์ ‘์ฐฉํŒจ๋“œ(130)๋Š” ์ ˆ์—ฐ๋ฌผ์งˆ์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ ‘์ฐฉํŒจ๋“œ(130) ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ์‚ฌ์ด์— ์ ‘์ฐฉ๋ฌผ์งˆ(132)์ด ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์€ ์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ์ƒ๊ธฐ ์ ‘์ฐฉ ๋ฌผ์งˆ(132)์— ์˜ํ•ด ๊ณ ์ •๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์€ ์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ๋ณผ ๊ทธ๋ฆฌ๋“œ ์–ด๋ ˆ์ด ํŒจํ‚ค์ง€ ๊ตฌ์กฐ๋กœ ์‹ค์žฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์€ ์ง‘์ ํšŒ๋กœ๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. 8, 9, and 10, a substrate 100 is provided. The substrate 100 may be a substrate for a package. An insulating material 134 may be disposed under the substrate 100. The junction electrode 136 may be disposed under the substrate 100. Solder balls 138 connected to the junction electrode 136 may be disposed under the substrate 100. The semiconductor chip 200 may be disposed on the substrate 100. An adhesive pad 130 may be interposed between the semiconductor chip 200 and the substrate 100. The adhesive pad 130 may include a conductive material. In this case, the adhesive pad 130 may be used for connection with the ground. In contrast, the adhesive pad 130 may be an insulating material. An adhesive material 132 may be interposed between the adhesive pad 130 and the semiconductor chip 200. The semiconductor chip 200 may be fixed on the substrate 100 by the adhesive material 132. The semiconductor chip 200 may be mounted in a ball grid array package structure on the substrate 100. The semiconductor chip 200 may include an integrated circuit.

์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ์ œ1 ์ ‘์† ํŒจ๋“œ(110)๋“ค ๋ฐ ์ œ2 ์ ‘์† ํŒจ๋“œ(120)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ œ1 ์ ‘์† ํŒจ๋“œ(110)๋“ค ๋ฐ ์ œ2 ์ ‘์† ํŒจ๋“œ(120)๋“ค์€ ๋„์ „์„ฑ์„ ๊ฐ–๋Š” ๋™์ผํ•œ ๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ด์™€๋Š” ๋‹ฌ๋ฆฌ, ์ƒ๊ธฐ ์ œ1 ์ ‘์† ํŒจ๋“œ(110)๋“ค ๋ฐ ์ƒ๊ธฐ ์ œ2 ์ ‘์† ํŒจ๋“œ(120)๋“ค์€ ๋‹ค๋ฅธ ๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ์ƒ๊ธฐ ์ œ1 ์ ‘์† ํŒจ๋“œ(110)๋“ค์€ ์ ˆ์—ฐ์„ฑ์„ ๊ฐ–๋Š” ๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ œ1 ์ ‘์†ํŒจ๋“œ(110)๋“ค์€ ์ƒ๊ธฐ ๊ธฐํŒ(100)๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์ ˆ์—ฐ๋  ์ˆ˜ ์žˆ๋‹ค. First connection pads 110 and second connection pads 120 may be disposed on the substrate 100. The first connection pads 110 and the second connection pads 120 may include the same material having conductivity. Alternatively, the first connection pads 110 and the second connection pads 120 may include other materials. For example, the first connection pads 110 may include an insulating material. The first connection pads 110 may be electrically insulated from the substrate 100.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ์ƒ์— ์ œ1 ๋ณธ๋”ฉ ํŒจ๋“œ(240) ๋ฐ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ(245)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(240, 245)์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ๊ฐ€์žฅ ์ž๋ฆฌ์— ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(240, 245)์€ ์ผ์ •ํ•œ ๊ฐ„๊ฒฉ์œผ๋กœ ์ด๊ฒฉ๋˜์–ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(240, 245)์€ ๋„์ „์„ฑ์„ ๊ฐ–๋Š” ๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค.First bonding pads 240 and second bonding pads 245 may be disposed on the semiconductor chip 200. The bonding pads 240 and 245 may be disposed at edges of the semiconductor chip 200. The bonding pads 240 and 245 may be spaced apart at regular intervals. The bonding pads 240 and 245 may include a conductive material.

์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ์ƒ๊ธฐ ์ œ1 ๋ณธ๋”ฉ ํŒจ๋“œ(240)๋“ค๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณธ๋”ฉ ์™€์ด์–ด(260)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด(260)๋“ค์€ ์ƒ๊ธฐ ์ œ1 ์ ‘์† ํŒจ๋“œ(110)์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ œ1 ์ ‘์† ํŒจ๋“œ(110)๋Š” ์ƒ๊ธฐ ์†”๋”๋ณผ(138)๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด(260)๋“ค์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ์ง‘์ ํšŒ๋กœ ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ(100)์„ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ์‹œํ‚ฌ ์ˆ˜ ์žˆ๋‹ค.Bonding wires 260 electrically connected to the first bonding pads 240 may be disposed on the substrate 100. The bonding wires 260 may be electrically connected to the first connection pad 110. The first connection pad 110 may be electrically connected to the solder ball 138. The bonding wires 260 may electrically connect the integrated circuit of the semiconductor chip 200 and the substrate 100.

์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ์ƒ๊ธฐ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ(245)๋“ค๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ํ†ต์‹  ๋ชจ๋“ˆ์˜ ์•ˆํ…Œ๋‚˜๋กœ ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ์ƒ๊ธฐ ์ œ2 ์ ‘์† ํŒจ๋“œ(120)์™€ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ๋„๋ฉด์— ๋„์‹œ๋œ ๋ฐ”์™€๋Š” ๋‹ฌ๋ฆฌ, ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ์ƒ๊ธฐ ์ œ2 ์ ‘์† ํŒจ๋“œ(120)์™€ ์—ฐ๊ฒฐ๋˜์ง€ ์•Š์„ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์€ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด(260)์™€ ๋™์ผํ•œ ๊ณต์ •์—์„œ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค.A plurality of bonding wire antennas 250 electrically connected to the second bonding pads 245 may be disposed on the substrate 100. The bonding wire antennas 250 may be used as antennas of a communication module. The bonding wire antennas 250 may be connected to the second connection pad 120. Unlike the drawing, the bonding wire antennas 250 may not be connected to the second connection pad 120. The bonding wire antennas 250 may transmit and receive signals. The bonding wire antennas 250 may be provided in the same process as the bonding wire 260.

์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)์˜ ๊ธธ์ด๋Š” ์‚ฌ์šฉ๋˜๋Š” ์‹ ํ˜ธ์˜ ํŒŒ์žฅ์— ๋”ฐ๋ผ์„œ ๋‹ฌ๋ผ์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ผ๋ฐ˜์ ์œผ๋กœ ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” ฮป/4 (ฮป:ํŒŒ์žฅ)์ผ ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ํ†ต์‹  ๋ชจ๋“ˆ์ด 60GHz ๋Œ€์—ญ์˜ ์ฃผํŒŒ์ˆ˜๋ฅผ ์‚ฌ์šฉํ•˜๋Š” ๊ฒฝ์šฐ, ์‹ ํ˜ธ์˜ ํŒŒ์žฅ์€ 5mm ์ด๋ฏ€๋กœ, ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” 1.25mm ์ผ ์ˆ˜ ์žˆ๊ณ , ํ†ต์‹  ๋ชจ๋“ˆ์ด 77GHz ๋Œ€์—ญ์˜ ์ฃผํŒŒ์ˆ˜๋ฅผ ์‚ฌ์šฉํ•˜๋Š” ๊ฒฝ์šฐ, ์‹ ํ˜ธ์˜ ํŒŒ์žฅ์€ 3.9mm ์ด๋ฏ€๋กœ, ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)์˜ ๊ธธ์ด๋Š” 0.97mm์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์˜ ๊ธธ์ด๋Š” ์‹ค์งˆ์ ์œผ๋กœ ๋™์ผํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋“ค์˜ ๊ธธ์ด๋Š” 0.8mm~1.5mm ์ผ ์ˆ˜ ์žˆ๋‹ค.์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์€ ์ฆํญ๊ธฐ(230)๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋Š” ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier) ๋˜๋Š” ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Amplifier) ์ค‘์—์„œ ์–ด๋Š ํ•˜๋‚˜๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier)๋Š” ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๊ฐ€ ์‹ ํ˜ธ๋ฅผ ์†ก์‹ ํ•˜๊ธฐ ์œ„ํ•ด ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Amplifier)๋Š” ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๊ฐ€ ์‹ ํ˜ธ๋ฅผ ์ˆ˜์‹ ํ•˜๊ธฐ ์œ„ํ•ด ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. The length of the bonding wire antenna 250 may vary depending on the wavelength of the signal used. In general, the length of the antenna may be ฮป / 4 (ฮป: wavelength). For example, when the communication module uses a frequency of 60GHz band, the wavelength of the signal is 5mm, so the length of the bonding wire antenna may be 1.25mm, and when the communication module uses the frequency of 77GHz band, the wavelength of the signal Since 3.9mm, the length of the bonding wire antenna 250 may be 0.97mm. The length of the bonding wire antennas 250 may be substantially the same. The bonding wire antenna 250 may have a length of about 0.8 mm to about 1.5 mm. The semiconductor chip 200 may include an amplifier 230. The amplifier 230 may include any one of a power amplifier and a low noise amplifier. The power amplifier may be used for the bonding wire antenna 250 to transmit a signal. The low noise amplifier may be used by the bonding wire antenna 250 to receive a signal.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์€ ์†ก์ˆ˜์‹ ๋ถ€(210)๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(210)๋Š” ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค ๋ฐ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(210) ์‚ฌ์ด์— ์Šค์œ„์น˜(220)๊ฐ€ ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์Šค์œ„์น˜(220)๋Š” ํŠธ๋žœ์ง€์Šคํ„ฐ๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. The semiconductor chip 200 may include a transceiver 210. The transceiver 210 may be electrically connected to the amplifiers 230. A switch 220 may be disposed between the amplifiers 230 and the transceiver 210. The switch 220 may include a transistor.

์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(210)๋กœ๋ถ€ํ„ฐ ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋กœ ์‹ ํ˜ธ๋“ค์ด ์ž…๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋กœ ์ž…๋ ฅ๋œ ์‹ ํ˜ธ๋“ค์€ ์ƒ๊ธฐ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ(245)๋ฅผ ๊ฒฝ์œ ํ•˜์—ฌ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)์—์„œ ์ถœ๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ด ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋“ค์€ ํŒŒ์›Œ ์ฆํญ๊ธฐ(PA)์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)์—์„œ ์ถœ๋ ฅ ์‹ ํ˜ธ(10)๊ฐ€ ์ถœ๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)์˜ ๋ฐฉํ–ฅ์— ๋”ฐ๋ผ์„œ, ์ถœ๋ ฅ ์‹ ํ˜ธ(10)์˜ ์ถœ๋ ฅ ๋ฐฉํ–ฅ์ด ์กฐ์ ˆ๋  ์ˆ˜ ์žˆ๋‹ค. Signals may be input from the transceiver 210 to the amplifier 230. The signals input to the amplifier 230 may be output from the bonding wire antenna 250 via the second bonding pad 245. In this case, the amplifiers 230 may be power amplifiers PA. The output signal 10 may be output from the bonding wire antenna 250. According to the direction of the bonding wire antenna 250, the output direction of the output signal 10 can be adjusted.

์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋ฅผ ํ†ตํ•ด ์‹ ํ˜ธ๋“ค์ด ์ˆ˜์‹ ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)์—์„œ ์ˆ˜์‹ ๋œ ์‹ ํ˜ธ๋Š” ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋ฅผ ๊ฒฝ์œ ํ•˜์—ฌ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(210)๋กœ ์ž…๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ด ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ(230)๋Š” ์ €์žก์Œ ์ฆํญ๊ธฐ(LNA)์ผ ์ˆ˜ ์žˆ๋‹ค. Signals may be received through the bonding wire antenna 250. The signal received by the bonding wire antenna 250 may be input to the transceiver 210 via the amplifier 230. In this case, the amplifier 230 may be a low noise amplifier (LNA).

๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅด๋ฉด, ๋ฐ˜๋„์ฒด ํŒจํ‚ค์ง€ ๊ณต์ •์—์„œ ์ œ๊ณต๋˜๋Š” ๋ณธ๋”ฉ ์™€์–ด์ด๋ฅผ ์•ˆํ…Œ๋‚˜๋กœ ํ™œ์šฉํ•จ์œผ๋กœ์จ, ๋ณ„๋„์˜ ์ œ์กฐ ๊ณต์ •์˜ ๊ฐœ๋ฐœ์ด ํ•„์š”์—†์ด, ์ดˆ์†Œํ˜• ์•ˆํ…Œ๋‚˜๋ฅผ ๊ตฌํ˜„ํ•  ์ˆ˜ ์žˆ๋‹ค. ์ด๋กœ์จ, ๊ฐ€๊ฒฉ์ด ์ €๋ ดํ•˜๋ฉด์„œ๋„ ๋™์‹œ์— ์ดˆ์†Œํ˜•์˜ ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜๊ณ , ๋ฌด์„  ๋„คํŠธ์›Œํฌ๋ฅผ ๋น„๋กฏํ•œ ๊ฐ์ข… ํ†ต์‹  ์‹œ์Šคํ…œ ๋ฐ ์ „์ž๊ธฐ๊ธฐ ๋“ฑ์—์„œ ํ™œ์šฉ ๊ฐ€๋Šฅํ•œ ๊ณ ์ง‘์  ํ†ต์‹ ๋ชจ๋“ˆ์— ์ตœ์ ํ™”๋œ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. According to an embodiment of the present invention, by using a bonding wire provided in a semiconductor package process as an antenna, a micro-antenna may be implemented without developing a separate manufacturing process. As a result, a monopole bonding wire antenna communication module, which is inexpensive and includes an ultra-small antenna and is optimized for a highly integrated communication module that can be utilized in various communication systems and electronic devices including a wireless network, may be provided.

๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์˜ ๋ณ€ํ˜• ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์ด ์„ค๋ช…๋œ๋‹ค. A monopole bonding wire communication module according to a variation of an embodiment of the present invention is described.

๋„ 11์€ ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์˜ ๋‹ค๋ฅธ ๋ณ€ํ˜• ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋‹จ๋ฉด๋„์ด๋‹ค. ๋„ 9์˜ ๋ถ€ํ˜ธ์™€ ๋™์ผํ•œ ๋ถ€ํ˜ธ๋Š” ๋™์ผํ•œ ๊ตฌ์„ฑ์— ํ•ด๋‹นํ•œ๋‹ค. 11 is a cross-sectional view illustrating a monopole bonding wire communication module according to another modified example of the embodiment of the present invention. The same code | symbol as the code | symbol of FIG. 9 corresponds to the same structure.

๋„ 11์„ ์ฐธ์กฐํ•˜๋ฉด, ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ํ•˜๋ถ€ ๋ฐ ๊ธฐํŒ(100)์˜ ์ƒ๋ถ€์— ๋„์ „ ํŒจ๋“œ(124)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ๋„์ „ ํŒจ๋“œ(124)๋“ค๊ณผ ์ƒ๊ธฐ ๊ธฐํŒ(100)์˜ ๋„์ „ ํŒจ๋“œ(124)๋“ค ์‚ฌ์ด์— ๋ฒ”ํ”„(126)๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100) ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ์‚ฌ์ด์˜ ๊ณต๊ฐ„์€ ์–ธ๋”ํ•„(122)๋กœ ์ฑ„์›Œ์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์–ธ๋”ํ•„(122)์€ ์—ํญ์‹œ๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ์ง‘์ ํšŒ๋กœ๋Š” ์ƒ๊ธฐ ๊ธฐํŒ(100)๊ณผ ์ƒ๊ธฐ ๋„์ „ ํŒจ๋“œ(124)๋“ค ๋ฐ ์ƒ๊ธฐ ๋ฒ”ํ”„(126)์„ ํ†ตํ•˜์—ฌ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. Referring to FIG. 11, conductive pads 124 may be disposed below the semiconductor chip 200 and above the substrate 100. Bumps 126 may be disposed between the conductive pads 124 of the semiconductor chip 200 and the conductive pads 124 of the substrate 100. The space between the substrate 100 and the semiconductor chip 200 may be filled with an underfill 122. The underfill 122 may include an epoxy. The integrated circuit of the semiconductor chip 200 may be electrically connected to the substrate 100 through the conductive pads 124 and the bump 126.

์ƒ๊ธฐ ๋ฒ”ํ”„(126)๋“ค์„ ์ด์šฉํ•˜์—ฌ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ(100)์ด ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋จ์œผ๋กœ์จ, ๋ณธ๋”ฉ ์™€์ด์–ด๋“ค์ด ์ƒ๋žต๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ์ƒ์— ๋ฐฐ์น˜๋œ ์ƒ๊ธฐ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ(245)์—๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๊ฐ€ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)๋Š” ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200)์˜ ์†ก์ˆ˜์‹ ๋ถ€ ๋ฐ ์ฆํญ๊ธฐ์™€ ์—ฐ๊ฒฐ๋˜์–ด, ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•  ์ˆ˜ ์žˆ๋‹ค. Since the semiconductor chip 200 and the substrate 100 are electrically connected using the bumps 126, bonding wires may be omitted. A bonding wire antenna 250 may be connected to the second bonding pad 245 disposed on the semiconductor chip 200. The bonding wire antenna 250 may be connected to a transceiver and an amplifier of the semiconductor chip 200 to transmit and receive a signal.

๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์ด ์„ค๋ช…๋œ๋‹ค. A monopole bonding wire communication module according to another embodiment of the present invention is described.

๋„ 12๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ์‚ฌ์‹œ๋„์ด๋‹ค. ๋„ 13์€ ๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋‹ค๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•ด ๋„ 12์˜ II-II'๋ฅผ ๋”ฐ๋ผ ์ทจํ•œ ๋‹จ๋ฉด๋„์ด๋‹ค. ๋„ 8์˜ ๋ถ€ํ˜ธ์™€ ๋™์ผํ•œ ๋ถ€ํ˜ธ๋Š” ๋™์ผํ•œ ๊ตฌ์„ฑ์— ํ•ด๋‹นํ•œ๋‹ค. ๋„ 8์˜ ๋ถ€ํ˜ธ์™€ ๋™์ผํ•œ ๋ถ€ํ˜ธ๋Š” ๋™์ผํ•œ ๊ตฌ์„ฑ์— ํ•ด๋‹นํ•œ๋‹ค. 12 is a perspective view illustrating a communication module according to another embodiment of the present invention. FIG. 13 is a cross-sectional view taken along line II-II 'of FIG. 12 to describe another communication module according to another embodiment of the present invention. The same code | symbol as the code | symbol of FIG. 8 corresponds to the same structure. The same code | symbol as the code | symbol of FIG. 8 corresponds to the same structure.

๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ๋Š” ๋ณต์ˆ˜์˜ ์นฉ์ด ์ ์ธต๋œ ํŒจํ‚ค์ง€ ๊ตฌ์กฐ์— ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ ์šฉ๋œ ๊ฒฝ์šฐ์ด๋‹ค. Another embodiment of the present invention is a case in which a communication module according to an embodiment of the present invention is applied to a package structure in which a plurality of chips are stacked.

๋„ 12 ๋ฐ ๋„ 13์„ ์ฐธ์กฐํ•˜๋ฉด, ๊ธฐํŒ(100) ๋ฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ์‚ฌ์ด์— ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(300, 400)์ด ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ๋ฐ ์ƒ๊ธฐ ์ œ1 ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ(300) ์‚ฌ์ด์— ์ ‘์ฐฉ๋ฌผ์งˆ(132)์ด ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ œ1 ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด์นฉ(300) ๋ฐ ์ƒ๊ธฐ ์ œ2 ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ(400) ์‚ฌ์ด์— ์ œ1 ์ถ”๊ฐ€ ์ ‘์ฐฉ ๋ฌผ์งˆ(340)์ด ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ œ2 ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ(400) ๋ฐ ์ ˆ์—ฐ๋ง‰(130) ์‚ฌ์ด์— ์ œ2 ์ถ”๊ฐ€ ์ ‘์ฐฉ ๋ฌผ์งˆ(440)์ด ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. 12 and 13, additional semiconductor chips 300 and 400 may be interposed between the substrate 100 and the semiconductor chip 200. An adhesive material 132 may be interposed between the semiconductor chip 200 and the first additional semiconductor chip 300. A first additional adhesive material 340 may be interposed between the first additional semiconductor chip 300 and the second additional semiconductor chip 400. A second additional adhesive material 440 may be interposed between the second additional semiconductor chip 400 and the insulating layer 130.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(200, 300, 400) ์ƒ์— ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(240, 245, 340, 440)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(240, 245, 340, 440)์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(200, 300, 400)์˜ ๊ฐ€์žฅ ์ž๋ฆฌ์— ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. Bonding pads 240, 245, 340, and 440 may be disposed on the semiconductor chips 200, 300, and 400. The bonding pads 240, 245, 340, and 440 may be disposed at edges of the semiconductor chips 200, 300, and 400.

์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(300, 400) ์ƒ์— ๋ฐฐ์น˜๋œ ์ถ”๊ฐ€ ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(340, 440)๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ์ถ”๊ฐ€ ๋ณธ๋”ฉ ์™€์ด์–ด๋“ค(360, 460)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ณธ๋”ฉ ์™€์ด์–ด๋“ค(360, 460)์€ ์ ‘์† ํŒจ๋“œ๋“ค(110, 120)๊ณผ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ณธ๋”ฉ ์™€์ด์–ด๋“ค(360, 460)์€ ์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(300, 400) ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ(100)์„ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ์‹œํ‚ฌ ์ˆ˜ ์žˆ๋‹ค. Additional bonding wires 360 and 460 electrically connected to the additional bonding pads 340 and 440 disposed on the additional semiconductor chips 300 and 400 may be disposed. The additional bonding wires 360 and 460 may be connected to the connection pads 110 and 120. The additional bonding wires 360 and 460 may electrically connect the additional semiconductor chips 300 and 400 and the substrate 100.

๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250)์˜ ๊ธธ์ด๋Š”, ์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ(300, 400)์ด ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200) ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ(100) ์‚ฌ์ด์— ๊ฐœ์žฌ๋˜์ง€ ์•Š์€ ๊ฒฝ์šฐ์™€ ๋น„๊ตํ•˜์—ฌ, ๊ธธ์–ด์งˆ ์ˆ˜ ์žˆ๋‹ค. ๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์€, ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์‚ฌ์šฉ๋˜๋Š” ์ฃผํŒŒ์ˆ˜ ๋Œ€์—ญ์˜ ํ†ต์‹  ์‹œ์Šคํ…œ๋ณด๋‹ค, ๋‚ฎ์€ ์ฃผํŒŒ์ˆ˜ ๋Œ€์—ญ์˜ ํ†ต์‹  ์‹œ์Šคํ…œ์— ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. The length of the bonding wire antenna 250 may be longer than that of the case where the additional semiconductor chips 300 and 400 are not interposed between the semiconductor chip 200 and the substrate 100. The communication module according to another embodiment of the present invention may be used in a communication system of a lower frequency band than a communication system of a frequency band in which the communication module according to an embodiment of the present invention is used.

์ด์™€๋Š” ๋‹ฌ๋ฆฌ, ์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ(300, 400)๊ณผ ์—ฐ๊ฒฐ๋œ ์ถ”๊ฐ€ ๋ณธ๋”ฉ ์™€์ด์–ด๋“ค(360, 460)์˜ ์ผ๋ถ€๊ฐ€ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋กœ ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. Alternatively, some of the additional bonding wires 360 and 460 connected to the additional semiconductor chips 300 and 400 may be used as the bonding wire antennas.

๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์ด ์„ค๋ช…๋œ๋‹ค. A monopole bonding wire communication module according to another embodiment of the present invention is described.

๋„ 14๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ์‚ฌ์‹œ๋„์ด๊ณ , ๋„ 15๋Š” ๋„ 14์˜ ํ‰๋ฉด๋„์ด๋‹ค. 14 is a perspective view illustrating a communication module according to another embodiment of the present invention, and FIG. 15 is a plan view of FIG. 14.

๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ๋Š” ๊ธฐํŒ ์ƒ์— ๋ณต์ˆ˜์˜ ๋ฐ˜๋„์ฒด ์นฉ์ด ์‹ค์žฅ๋œ ๊ตฌ์กฐ(๋‹ค์ค‘ ์นฉ ๋ชจ๋“ˆ, Multi-Chip-Module)์— ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ ์šฉ๋œ ๊ฒฝ์šฐ์ด๋‹ค. Another embodiment of the present invention is a case in which a communication module according to an embodiment of the present invention is applied to a structure in which a plurality of semiconductor chips are mounted on a substrate (multi-chip module).

๋„ 14 ๋ฐ ๋„ 15๋ฅผ ์ฐธ์กฐํ•˜๋ฉด, ๊ธฐํŒ(100)์ด ์ œ๊ณต๋œ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100)์€ ๋„ 8 ์„ ์ฐธ์กฐํ•˜์—ฌ ์„ค๋ช…๋œ ๊ธฐํŒ ์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ๋ฐ˜๋„์ฒด ์นฉ ๋“ค(200a, 200b, 200c, 200d)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ๋“ค(200a, 200b, 200c, 200d) ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ(100) ์‚ฌ์ด์— ์ ‘์ฐฉํŒจ๋“œ๋“ค(130a, 130b, 130c, 130d)์ด ๊ฐ๊ฐ ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ ‘์ฐฉํŒจ๋“œ๋“ค(130a, 130b, 130c, 130d) ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ๋“ค(200a, 200b, 200c, 200d) ์‚ฌ์ด์— ์ ‘์ฐฉ๋ฌผ์งˆ๋“ค(132a, 132b, 132c, 132d)์ด ๊ฐ๊ฐ ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ๋“ค(200a, 200b, 200c, 200d)์€ ์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ๋ณผ ๊ทธ๋ฆฌ๋“œ ์–ด๋ ˆ์ด ํŒจํ‚ค์ง€ ๊ตฌ์กฐ๋กœ ์‹ค์žฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(200a, 200b, 200c, 200d)์€ ์ง‘์ ํšŒ๋กœ๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(200)์˜ ํฌ๊ธฐ๋Š” ์ƒ์ดํ•  ์ˆ˜ ์žˆ๋‹ค. 14 and 15, a substrate 100 is provided. The substrate 100 may be the substrate described with reference to FIG. 8. Semiconductor chips 200a, 200b, 200c, and 200d may be disposed on the substrate 100. Adhesive pads 130a, 130b, 130c and 130d may be interposed between the semiconductor chips 200a, 200b, 200c and 200d and the substrate 100, respectively. Adhesive materials 132a, 132b, 132c, and 132d may be interposed between the adhesive pads 130a, 130b, 130c, and 130d and the semiconductor chips 200a, 200b, 200c, and 200d, respectively. The semiconductor chips 200a, 200b, 200c, and 200d may be mounted on the substrate 100 in a ball grid array package structure. The semiconductor chips 200a, 200b, 200c, and 200d may include an integrated circuit. Sizes of the semiconductor chips 200 may be different.

์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ์ œ1 ์ ‘์† ํŒจ๋“œ๋“ค(110a, 110b, 110c, 110d: 110)๋“ค ๋ฐ ์ œ2 ์ ‘์† ํŒจ๋“œ๋“ค(120a, 120b, 120c, 120d)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ œ1 ์ ‘์† ํŒจ๋“œ๋“ค(110a, 110b, 110c, 110d) ๋ฐ ์ œ2 ์ ‘์† ํŒจ๋“œ๋“ค(120a, 120b, 120c, 120d)์€ ๋„์ „์„ฑ์„ ๊ฐ–๋Š” ๋™์ผํ•œ ๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ด์™€๋Š” ๋‹ฌ๋ฆฌ, ์ƒ๊ธฐ ์ œ1 ์ ‘์† ํŒจ๋“œ๋“ค(110a, 110b, 110c, 110d) ๋ฐ ์ƒ๊ธฐ ์ œ2 ์ ‘์† ํŒจ๋“œ๋“ค(120a, 120b, 120c, 120d)์€ ๋‹ค๋ฅธ ๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ์ƒ๊ธฐ ์ œ2 ์ ‘์† ํŒจ๋“œ๋“ค(120a, 120b, 120c, 120d)์€ ์ ˆ์—ฐ์„ฑ์„ ๊ฐ–๋Š” ๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ œ2 ์ ‘์†ํŒจ๋“œ๋“ค(120a, 120b, 120c, 120d)์€ ์ƒ๊ธฐ ๊ธฐํŒ(100)๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์ ˆ์—ฐ๋  ์ˆ˜ ์žˆ๋‹ค. First connection pads 110a, 110b, 110c and 110d: 110 and second connection pads 120a, 120b, 120c and 120d may be disposed on the substrate 100. The first connection pads 110a, 110b, 110c and 110d and the second connection pads 120a, 120b, 120c and 120d may include the same material having conductivity. Alternatively, the first connection pads 110a, 110b, 110c and 110d and the second connection pads 120a, 120b, 120c and 120d may include other materials. For example, the second connection pads 120a, 120b, 120c, and 120d may include an insulating material. The second connection pads 120a, 120b, 120c, and 120d may be electrically insulated from the substrate 100.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(200a, 200b, 200c, 200d) ์ƒ์— ์ œ1 ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(240a, 240b, 240c, 240d) ๋ฐ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(245a, 245b, 245c, 245d)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. First bonding pads 240a, 240b, 240c, and 240d and second bonding pads 245a, 245b, 245c, and 245d may be disposed on the semiconductor chips 200a, 200b, 200c, and 200d.

์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ์ƒ๊ธฐ ์ œ1 ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(240a, 240b, 240c, 240d)๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณธ๋”ฉ ์™€์ด์–ด๋“ค(260a, 260b, 260c, 260d)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด๋“ค(260a, 260b, 260c, 260d)์€ ์ƒ๊ธฐ ์ œ1 ์ ‘์† ํŒจ๋“œ๋“ค(110a, 110b, 110c, 110d)๊ณผ ๊ฐ๊ฐ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด(260a, 260b, 160c, 260d)๋“ค์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(200a, 200b, 200c, 200d)์˜ ์ง‘์ ํšŒ๋กœ ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ(100)์„ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ์‹œํ‚ฌ ์ˆ˜ ์žˆ๋‹ค.Bonding wires 260a, 260b, 260c, and 260d electrically connected to the first bonding pads 240a, 240b, 240c, and 240d may be disposed on the substrate 100. The bonding wires 260a, 260b, 260c, and 260d may be electrically connected to the first connection pads 110a, 110b, 110c, and 110d, respectively. The bonding wires 260a, 260b, 160c, and 260d may electrically connect the integrated circuits of the semiconductor chips 200a, 200b, 200c, and 200d and the substrate 100.

์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ์ƒ๊ธฐ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ(245a, 245b, 245c, 245d)๋“ค๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์€ ํ†ต์‹  ๋ชจ๋“ˆ์˜ ์•ˆํ…Œ๋‚˜๋กœ ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d๋“ค์€ ์ƒ๊ธฐ ์ œ2 ์ ‘์† ํŒจ๋“œ๋“ค(120a, 120b, 120c, 120d)๊ณผ ๊ฐ๊ฐ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ๋„๋ฉด์— ๋„์‹œ๋œ ๋ฐ”์™€๋Š” ๋‹ฌ๋ฆฌ, ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์€ ์ƒ๊ธฐ ์ œ2 ์ ‘์† ํŒจ๋“œ๋“ค(120a, 120b, 120c, 120d)๊ณผ ์—ฐ๊ฒฐ๋˜์ง€ ์•Š์„ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์€ ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์€ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด๋“ค(260a, 260b, 260c, 260d)๊ณผ ๋™์ผํ•œ ๊ณต์ •์—์„œ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค.Bonding wire antennas 250a, 250b, 250c, and 250d electrically connected to the second bonding pads 245a, 245b, 245c, and 245d may be disposed on the substrate 100. The bonding wire antennas 250a, 250b, 250c, and 250d may be used as antennas of a communication module. The bonding wire antennas 250a, 250b, 250c, and 250d may be connected to the second connection pads 120a, 120b, 120c, and 120d, respectively. , 250b, 250c, and 250d may not be connected to the second connection pads 120a, 120b, 120c, and 120d The bonding wire antennas 250a, 250b, 250c, and 250d may transmit and receive a signal. The bonding wire antennas 250a, 250b, 250c, and 250d may be provided in the same process as the bonding wires 260a, 260b, 260c, and 260d.

์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์˜ ๊ธธ์ด๋Š” ์‚ฌ์šฉ๋˜๋Š” ์‹ ํ˜ธ์˜ ํŒŒ์žฅ์— ๋”ฐ๋ผ์„œ ๋‹ฌ๋ผ์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ผ๋ฐ˜์ ์œผ๋กœ ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” ฮป/4 (ฮป:ํŒŒ์žฅ)์ผ ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ํ†ต์‹  ๋ชจ๋“ˆ์ด 60Ghz ๋Œ€์—ญ์˜ ์ฃผํŒŒ์ˆ˜๋ฅผ ์‚ฌ์šฉํ•˜๋Š” ๊ฒฝ์šฐ, ์‹ ํ˜ธ์˜ ํŒŒ์žฅ์€ ์•ฝ 5mm ์ด๋ฏ€๋กœ, ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์˜ ๊ธธ์ด๋Š” ์•ฝ 1.25mm ์ผ ์ˆ˜ ์žˆ๊ณ , ํ†ต์‹  ๋ชจ๋“ˆ์ด 77GHz ๋Œ€์—ญ์˜ ์ฃผํŒŒ์ˆ˜๋ฅผ ์‚ฌ์šฉํ•˜๋Š” ๊ฒฝ์šฐ, ์‹ ํ˜ธ์˜ ํŒŒ์žฅ์€ ์•ฝ 3.9mm ๋‚ด์™ธ์ด๋ฏ€๋กœ, ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์˜ ๊ธธ์ด๋Š” ์•ฝ 0.97mm์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์˜ ๊ธธ์ด๋Š” ์‹ค์งˆ์ ์œผ๋กœ ๋™์ผํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์˜ ๊ธธ์ด๋Š” 0.8mm~1.5mm ์ผ ์ˆ˜ ์žˆ๋‹ค.The length of the bonding wire antennas 250a, 250b, 250c, and 250d may vary depending on the wavelength of the signal used. In general, the length of the antenna may be ฮป / 4 (ฮป: wavelength). For example, when the communication module uses a frequency of the 60Ghz band, since the wavelength of the signal is about 5mm, the length of the bonding wire antennas 250a, 250b, 250c, 250d may be about 1.25mm, and the communication module is When the frequency of the 77 GHz band is used, the wavelength of the signal is about 3.9 mm, so that the length of the bonding wire antennas 250a, 250b, 250c, and 250d may be about 0.97 mm. The lengths of the bonding wire antennas 250a, 250b, 250c, and 250d may be substantially the same. The length of the bonding wire antennas 250a, 250b, 250c, and 250d may be 0.8 mm to 1.5 mm.

๋„๋ฉด ์ƒ์—๋Š” 4๊ฐœ์˜ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(200a, 200b, 200c, 200d)์ด ๋„์‹œ๋˜์—ˆ์ง€๋งŒ, 2~3๊ฐœ ๋˜๋Š” ์ด๋ณด๋‹ค ๋งŽ์€ ๋ฐ˜๋„์ฒด ์นฉ๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ๋„๋ฉด ์ƒ์—๋Š” ์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ๋ฐฐ์น˜๋œ ๊ฐ๊ฐ์˜ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(200a, 200b, 200c, 200d)์ด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜์ง€๋งŒ, ์ผ๋ถ€์˜ ๋ฐ˜๋„์ฒด ์นฉ๋“ค์ด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜๊ณ , ๋‚˜๋จธ์ง€ ์ผ๋ถ€์˜ ๋ฐ˜๋„์ฒด ์นฉ๋“ค์€ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜์ง€ ์•Š์„ ์ˆ˜ ์žˆ๋‹ค. Although four semiconductor chips 200a, 200b, 200c, and 200d are illustrated in the drawing, two or three or more semiconductor chips may be disposed. In the drawing, each of the semiconductor chips 200a, 200b, 200c, and 200d disposed on the substrate 100 includes a bonding wire antenna, but some semiconductor chips include a bonding wire antenna, and some of the semiconductor chips It may not include a bonding wire antenna.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(200a, 200b, 200c, 200d)์€ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)์€ ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier) ๋ฐ ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Amplifier) ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier)๋Š” ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์ด ์‹ ํ˜ธ๋ฅผ ์†ก์‹ ํ•˜๊ธฐ ์œ„ํ•ด ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Amplifier)๋Š” ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์ด ์‹ ํ˜ธ๋ฅผ ์ˆ˜์‹ ํ•˜๊ธฐ ์œ„ํ•ด ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d) ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜์˜ ์ฆํญ๊ธฐ๋Š” CMOS๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. The semiconductor chips 200a, 200b, 200c, and 200d may include amplifiers 230a, 230b, 230c, and 230d. The amplifiers 230a, 230b, 230c, and 230d may include at least one of a power amplifier and a low noise amplifier. The power amplifier may be used for the bonding wire antennas 250a, 250b, 250c, 250d to transmit a signal. The low noise amplifier may be used for the bonding wire antennas 250a, 250b, 250c, 250d to receive a signal. At least one of the amplifiers 230a, 230b, 230c, and 230d may be provided using a CMOS process.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(200a, 200b, 200c, 200d)์€ ๊ฐ๊ฐ ์†ก์ˆ˜์‹ ๋ถ€๋“ค(210a, 210b, 210c, 210d)์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋“ค(210a, 210b, 210c, 210d)์€ ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)๊ณผ ๊ฐ๊ฐ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d) ๋ฐ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋“ค(210a, 210b, 210c, 210d) ์‚ฌ์ด์— ์Šค์œ„์น˜๋“ค(220a, 220b, 220c, 220d)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์Šค์œ„์น˜๋“ค(220a, 220b, 220c, 220d)์€ ํŠธ๋žœ์ง€์Šคํ„ฐ๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. The semiconductor chips 200a, 200b, 200c, and 200d may include transceivers 210a, 210b, 210c, and 210d, respectively. The transceivers 210a, 210b, 210c, and 210d may be electrically connected to the amplifiers 230a, 230b, 230c, and 230d, respectively. Switches 220a, 220b, 220c and 220d may be disposed between the amplifiers 230a, 230b, 230c and 230d and the transceivers 210a, 210b, 210c and 210d. The switches 220a, 220b, 220c and 220d may include transistors.

์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋“ค(210a, 210b, 210c, 210d)๋กœ๋ถ€ํ„ฐ ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)๋กœ ์‹ ํ˜ธ๋“ค์ด ๊ฐ๊ฐ ์ž…๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)๋กœ ์ž…๋ ฅ๋œ ์‹ ํ˜ธ๋“ค์€ ์ƒ๊ธฐ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ๋“ค(245a, 245b, 245c, 245d)์„ ๊ฒฝ์œ ํ•˜์—ฌ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์—์„œ ์ถœ๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ด ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)์€ ํŒŒ์›Œ ์ฆํญ๊ธฐ(PA)์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์—์„œ ๊ฐ๊ฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์ด ์ถœ๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์ด ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋„๋ก, ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋“ค(210a, 210b, 201c, 210d)์—์„œ ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)๋กœ ์ž…๋ ฅ๋˜๋Š” ์‹ ํ˜ธ๋“ค์˜ ์œ„์ƒ์€ ๋™์ผํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์ด ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ€์ง์œผ๋กœ์จ, ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์€ ์„œ๋กœ ๋ณด๊ฐ• ๊ฐ„์„ญ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์ด ํ•ฉ์ณ์ ธ, ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๊ฐ€ ๊ตฌ์„ฑ๋  ์ˆ˜ ์žˆ๋‹ค. Signals may be input from the transceivers 210a, 210b, 210c, and 210d to the amplifiers 230a, 230b, 230c, and 230d, respectively. Signals input to the amplifiers 230a, 230b, 230c, and 230d are transferred from the bonding wire antennas 250a, 250b, 250c, and 250d via the second bonding pads 245a, 245b, 245c, and 245d. Can be output. In this case, the amplifiers 230a, 230b, 230c, and 230d may be power amplifiers PA. Output signals 10, 20, 30, and 40 may be output from the bonding wire antennas 250a, 250b, 250c, and 250d, respectively. Signals input to the amplifiers 230a, 230b, 230c, 230d from the transceivers 210a, 210b, 201c, 210d so that the output signals 10, 20, 30, 40 may have the same phase. These phases may be the same. As the output signals 10, 20, 30, and 40 have the same phase, the output signals 10, 20, 30, and 40 may constructively interfere with each other. The output signals 10, 20, 30, and 40 are combined to form one wide area signal.

์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์—, CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋œ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋Š” ํ•˜๋‚˜์˜ ๋ฐ˜๋„์ฒด ์นฉ ๋ฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๊ฐ€ ๋ฐฐ์น˜๋˜๋Š” ๊ฒฝ์šฐ, ์ฆํญ๊ธฐ์˜ ์ถœ๋ ฅํŒŒ์›Œ์— ์˜ํ•œ ์ œ์•ฝ์œผ๋กœ, ์ฆํญ๊ธฐ์˜ ์‹ ๋ขฐ์„ฑ์ด ์ €ํ•˜๋  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋œ ์ฆํญ๊ธฐ์˜ ๊ฒฝ์šฐ ํ•ซ ์บ๋ฆฌ์–ด ํšจ๊ณผ(Hot Carrier Effect) ๋“ฑ์— ์˜ํ•œ ์ œ์•ฝ์œผ๋กœ, ์‹ ๋ขฐ์„ฑ์„ ๊ฐ€์ง€๊ณ  ์‚ฌ์šฉํ•  ์ˆ˜ ์žˆ๋Š” ์ถœ๋ ฅ ํŒŒ์›Œ๋Š” 10dBm ๋‚ด์™ธ ์ผ ์ˆ˜ ์žˆ๋‹ค. ์ด์— ๋”ฐ๋ผ, CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋œ ์ฆํญ๊ธฐ๋Š” 30dBm ๋‚ด์™ธ์˜ ์ถœ๋ ฅ ํŒŒ์›Œ๋ฅผ ์š”๊ตฌํ•˜๋Š” ํ†ต์‹  ์‹œ์Šคํ…œ์— ์‚ฌ์šฉ๋  ์ˆ˜ ์—†๋Š” ์ œ์•ฝ์ด ์žˆ๋‹ค. ์ด์— ๋”ฐ๋ผ, ์ข…๋ž˜ 30dBm ๋‚ด์™ธ์˜ ์ถœ๋ ฅ ํŒŒ์›Œ๋ฅผ ์š”๊ตฌํ•˜๋Š” ํ†ต์‹  ์‹œ์Šคํ…œ์—์„œ๋Š” ํ™”ํ•ฉ๋ฌผ ๋ฐ˜๋„์ฒด๋กœ ๊ตฌํ˜„๋œ ์ฆํญ๊ธฐ๊ฐ€ ์‚ฌ์šฉ๋˜์—ˆ๋‹ค. ๋‹ค๋งŒ, ๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅด๋ฉด, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜(250a, 250b, 250c, 250d)๊ฐ€ ๊ฐ๊ฐ ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ–๋Š” ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์„ ์ถœ๋ ฅํ•˜์—ฌ ํ•˜๋‚˜์˜ ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•จ์œผ๋กœ์จ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)์˜ ๊ฐ๊ฐ์˜ ์ด๋“์€, ์ƒ๊ธฐ ๊ธฐํŒ(100) ์ƒ์— ํ•˜๋‚˜์˜ ๋ฐ˜๋„์ฒด ์นฉ ๋ฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๊ฐ€ ๋ฐฐ์น˜๋˜๋Š” ๊ฒฝ์šฐ์™€ ๋น„๊ตํ•˜์—ฌ, ์ž‘์„ ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ๊ธฐํŒ ์ƒ์— 6๊ฐœ์˜ ๋ฐ˜๋„์ฒด ์นฉ์ด ๋ฐฐ์น˜๋˜๊ณ , ๋ฐ˜๋„์ฒด ์นฉ๋“ค์ด 10dBm ์˜ ์ถœ๋ ฅ ํŒŒ์›Œ๋ฅผ ๊ฐ–๋Š” CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋œ ์ฆํญ๊ธฐ๋ฅผ ๊ฐ๊ฐ ํ•˜๋‚˜์”ฉ ํฌํ•จํ•˜๋Š” ๊ฒฝ์šฐ, ๊ฐ๊ฐ์˜ ์ฆํญ๊ธฐ๊ฐ€ ์ถœ๋ ฅํ•˜๋Š” 10dBm์˜ ์ถœ๋ ฅ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ 28dBm ๋‚ด์™ธ์˜ ๊ณ ์ถœ๋ ฅ ๊ด‘์—ญ ์‹ ํ˜ธ๋กœ ํ•ฉ์ณ์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ด์— ๋”ฐ๋ผ, 28dBm์˜ ์ถœ๋ ฅํŒŒ์›Œ๋ฅผ ๊ฐ–๋Š” ์ฆํญ๊ธฐ ๋ฐฐ์น˜๋œ ๊ฒƒ๊ณผ ๋™์ผํ•œ ํšจ๊ณผ๋ฅผ ํ˜„์ถœํ•  ์ˆ˜ ์žˆ๋‹ค. ๋”ฐ๋ผ์„œ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)์€ ํ™”ํ•ฉ๋ฌผ ๋ฐ˜๋„์ฒด๋กœ ๊ตฌํ˜„๋  ์ˆ˜ ์žˆ์Œ์€ ๋ฌผ๋ก , ๊ฐ€๊ฒฉ์ด ์ €๋ ดํ•œ CMOS๋กœ ๊ตฌํ˜„๋  ์ˆ˜๋„ ์žˆ๋‹ค. When one semiconductor chip and a bonding wire antenna including an amplifier provided by using a CMOS process are disposed on the substrate 100, the reliability of the amplifier may be lowered due to the constraint of the output power of the amplifier. For example, in the case of an amplifier provided using a CMOS process, the output power that can be used with reliability may be about 10 dBm due to constraints such as a hot carrier effect. Accordingly, there is a limitation that amplifiers provided using CMOS processes cannot be used in communication systems that require output powers of around 30 dBm. Accordingly, in a communication system requiring an output power of about 30 dBm, an amplifier implemented with a compound semiconductor has been used. However, according to an exemplary embodiment of the present invention, the plurality of bonding wire antennas 250a, 250b, 250c, and 250d respectively output the output signals 10, 20, 30, and 40 having the same phase to each other. By constructing the wide area signal, the gain of each of the amplifiers 230a, 230b, 230c, 230d can be small compared to the case where one semiconductor chip and a bonding wire antenna are disposed on the substrate 100. have. For example, if six semiconductor chips are placed on a substrate and the semiconductor chips each include one amplifier provided using a CMOS process having an output power of 10 dBm, the output signals of 10 dBm output by each amplifier are one. It can be combined into a high power wide area signal of around 28dBm. Accordingly, the same effect as that of the amplifier arrangement having an output power of 28 dBm can be exhibited. Therefore, the amplifiers 230a, 230b, 230c, and 230d may be implemented as compound semiconductors, or may be implemented as low cost CMOSs.

์ผ๋ฐ˜์ ์œผ๋กœ ํ†ต์‹  ๋ชจ๋“ˆ์— ํฌํ•จ๋œ ์ฆํญ๊ธฐ๋ฅผ ์„ค๊ณ„ํ•˜๋Š” ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋Š” ํ†ต์‹  ๋ชจ๋“ˆ์˜ ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ์— ์ƒ์‘ํ•˜๋Š” ์ถœ๋ ฅํŒŒ์›Œ๋ฅผ ๊ฐ–๋„๋ก ์„ค๊ณ„๋œ๋‹ค. ์ด์— ๋”ฐ๋ผ, ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ์—์„œ ์ตœ๊ณ  ํšจ์œจ์„ ๋‚˜ํƒ€๋‚ด๋Š” ์ฆํญ๊ธฐ์˜ ํŠน์„ฑ์ƒ, ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ์— ๋น„ํ•˜์—ฌ ๋‚ฎ์€ ์ถœ๋ ฅํŒŒ์›Œ๋กœ ๋™์ž‘ํ•˜๋Š” ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ์˜ ํšจ์œจ์ด ๋‚ฎ์•„์งˆ ์ˆ˜ ์žˆ๋‹ค. ๋ฐ˜๋ฉด, ๋ณธ ๋ฐœ๋ช…์— ๋”ฐ๋ฅด๋ฉด, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(200a, 200b, 200c, 200d) ์ƒ์— ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋“ค(210a, 210b, 210c, 210d) ๋ฐ ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)์„ ์—ฐ๊ฒฐํ•˜๋Š” ์Šค์œ„์น˜๋“ค(220a, 220b, 220c, 220d)์ด ๊ฐ๊ฐ ๋ฐฐ์น˜๋จ์œผ๋กœ์จ, ์ƒ๊ธฐ ๊ฐ๊ฐ์˜ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)์˜ ๋™์ž‘ ์—ฌ๋ถ€๊ฐ€ ์ œ์–ด๋  ์ˆ˜ ์žˆ๋‹ค. ๋”ฐ๋ผ์„œ, ํ•„์š”ํ•œ ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅ์˜ ์„ธ๊ธฐ์— ๋”ฐ๋ผ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)์˜ ๋™์ž‘์ด ์ƒ๊ธฐ ๊ฐ๊ฐ์˜ ์Šค์œ„์น˜๋“ค(220a, 220b, 220c, 220d)์— ์˜ํ•ด ์กฐ์ ˆ๋  ์ˆ˜ ์žˆ๋‹ค. ์ฆ‰, ๊ฐ๊ฐ์˜ ์ฆํญ๊ธฐ๋“ค์˜ ๋™์ž‘ ์—ฌ๋ถ€๋ฅผ ์ œ์–ดํ•˜์—ฌ, ํ†ต์‹  ๋ชจ๋“ˆ์ด ํ•„์š”๋กœ ํ•˜๋Š” ์ถœ๋ ฅ์‹ ํ˜ธ์˜ ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ๋ฅผ ๊ตฌํ˜„ํ•  ์ˆ˜ ์žˆ์–ด, ์ตœ๋Œ€ ์ถœ๋ ฅ ํŒŒ์›Œ๋ณด๋‹ค ๋‚ฎ์€ ์ถœ๋ ฅ ํŒŒ์›Œ๋กœ ํ†ต์‹  ๋ชจ๋“ˆ์ด ๋™์ž‘ํ•˜๋Š” ๊ฒฝ์šฐ์—๋„, ๊ฐ๊ฐ์˜ ์ฆํญ๊ธฐ๋“ค์€ ์ตœ๋Œ€์˜ ์ถœ๋ ฅ ํŒŒ์›Œ๋ฅผ ๊ฐ€์ง€๊ณ  ๋™์ž‘ํ•  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ํ•„์š”ํ•œ ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์„ธ๊ธฐ๊ฐ€ 28dBm์ด๊ณ , ๊ฐ๊ฐ์˜ ์ฆํญ๊ธฐ๋“ค์ด ์ตœ๋Œ€ ์ถœ๋ ฅ์ด 10dBm์ด๊ณ , ๊ธฐํŒ ์ƒ์— ์ฆํญ๊ธฐ๋ฅผ ๊ฐ–๋Š” ๋ฐ˜๋„์ฒด ์นฉ์ด 8๊ฐœ ๋ฐฐ์น˜๋˜๋Š” ๊ฒฝ์šฐ, ์ƒ๊ธฐ 8๊ฐœ์˜ ์ฆํญ๊ธฐ ์ค‘์—์„œ 6๊ฐœ์˜ ์ฆํญ๊ธฐ๋“ค์ด 10dBm๋กœ ๋™์ž‘ํ•˜์—ฌ, 28dBm์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ์ถœ๋ ฅํ•  ์ˆ˜ ์žˆ๋‹ค. ํ†ต์‹  ๋ชจ๋“ˆ์—์„œ ํ•„์š”ํ•œ ์ถœ๋ ฅํŒŒ์›Œ์— ๋”ฐ๋ผ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค์€ ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ๋กœ ๋™์ž‘ํ•  ์ˆ˜ ์žˆ๋‹ค. ์ด์— ๋”ฐ๋ผ, ๋ณต์ˆ˜๊ฐœ์˜ ์ฆํญ๊ธฐ ์ค‘์—์„œ ๋™์ž‘ํ•˜๋Š” ์ฆํญ๊ธฐ๋“ค์€ ์ตœ๊ณ  ํšจ์œจ์—์„œ ๋™์ž‘ํ•  ์ˆ˜ ์žˆ๊ณ , ๋”ฐ๋ผ์„œ, ๊ณ ํšจ์œจ์— ์ตœ์ ํ™”๋œ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค.In general, when designing an amplifier included in the communication module, the amplifier is designed to have an output power corresponding to the maximum output power of the communication module. Accordingly, when the communication module operates at a lower output power than the maximum output power, the efficiency of the amplifier may be lowered due to the characteristics of the amplifier having the highest efficiency at the maximum output power. On the other hand, according to the present invention, a switch connecting the transceivers 210a, 210b, 210c, 210d and the amplifiers 230a, 230b, 230c, 230d on the semiconductor chips 200a, 200b, 200c, 200d. Since the fields 220a, 220b, 220c, and 220d are disposed, the operation of the respective amplifiers 230a, 230b, 230c, and 230d may be controlled. Thus, depending on the intensity of the output of the wide area signal required, the operation of the amplifiers 230a, 230b, 230c, 230d may be adjusted by the respective switches 220a, 220b, 220c, 220d. That is, by controlling the operation of each of the amplifiers, it is possible to implement the maximum output power of the output signal required by the communication module, even if the communication module operates at an output power lower than the maximum output power, each amplifier is the maximum It can operate with output power of. For example, if the strength of the wide-area signal required is 28 dBm, the respective amplifiers have a maximum output of 10 dBm, and eight semiconductor chips with amplifiers are placed on the substrate, six of the eight amplifiers to 10 dBm. In operation, the wideband signal of 28dBm can be output. Depending on the output power required by the communication module, the amplifiers can operate at maximum output power. Accordingly, the amplifiers operating among the plurality of amplifiers can operate at the highest efficiency, and thus a communication module optimized for high efficiency can be provided.

์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์„ ํ†ตํ•ด ์‹ ํ˜ธ๋“ค์ด ์ˆ˜์‹ ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์—์„œ ์ˆ˜์‹ ๋œ ์‹ ํ˜ธ๋“ค์€ ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)์„ ๊ฑฐ์ณ ๊ฐ๊ฐ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋“ค(210a, 210b, 210c, 210d)๋กœ ์ž…๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ด ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)์€ ์ €์žก์Œ ์ฆํญ๊ธฐ(LNA)์ผ ์ˆ˜ ์žˆ๋‹ค. Signals may be received via the bonding wire antennas 250a, 250b, 250c, 250d. Signals received by the bonding wire antennas 250a, 250b, 250c, and 250d may be input to the transceivers 210a, 210b, 210c, and 210d through the amplifiers 230a, 230b, 230c, and 230d, respectively. have. In this case, the amplifiers 230a, 230b, 230c, and 230d may be low noise amplifiers (LNAs).

๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์˜ ๋ณ€ํ˜• ์˜ˆ์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์ด ์„ค๋ช…๋œ๋‹ค. A monopole bonding wire communication module according to a modification of another embodiment of the present invention is described.

๋„ 14๋ฅผ ๋‹ค์‹œ ์ฐธ์กฐํ•˜๋ฉด, ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์€ ์ผ์ •ํ•œ ๊ฐ„๊ฒฉ์œผ๋กœ ์ด๊ฒฉ๋˜์–ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์€ ฮป/2 (ฮป: ๋ณธ ๋ฐœ๋ช…์ด ์‚ฌ์šฉ๋˜๋Š” ํ†ต์‹  ์ฃผํŒŒ์ˆ˜์˜ ํŒŒ์žฅ)์˜ ๊ฐ„๊ฒฉ์„ ๊ฐ€์ง€๊ณ , ์ผ์ •ํ•˜๊ฒŒ ์ด๊ฒฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋“ค(210a, 210b, 210c, 210d) ๋‚ด๋ถ€์—๋Š” ์œ„์‚ฐ ์ฒœ์ด(phase shift)๋ฅผ ํ†ตํ•˜์—ฌ ์‹ ํ˜ธ๋ฅผ ์ง€์—ฐ์‹œํ‚ค๊ณ , ์ƒ๊ธฐ ์ง€์—ฐ๋œ ์‹ ํ˜ธ๋“ค์„ ์ค‘์ฒฉํ•˜๋Š” ๊ธฐ๋Šฅ ๋ธ”๋Ÿญ๋“ค์ด ๊ฐ๊ฐ ๊ตฌ๋น„๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋“ค(210a, 210b, 210c, 210d)์—์„œ ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)๋กœ ์ž…๋ ฅ๋˜๋Š” ๊ฐ๊ฐ์˜ ์‹ ํ˜ธ๋“ค์˜ ์œ„์ƒ์€ ์ƒ์ดํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค(230a, 230b, 230c, 230d)๋กœ ์ž…๋ ฅ๋˜๋Š” ์‹ ํ˜ธ๋“ค์€ ๊ฐ๊ฐ ์ผ์ •ํ•œ ์œ„์ƒ์˜ ์ฐจ์ด๋ฅผ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค(250a, 250b, 250c, 250d)์˜ ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์˜ ์œ„์ƒ์€ ๊ฐ๊ฐ ์ผ์ •ํ•œ ์ฐจ์ด๋ฅผ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค(10, 20, 30, 40)์€ ๊ฐ๊ฐ 45ยฐ์˜ ์œ„์ƒ์ฐจ์ด๋ฅผ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ด๋กœ์จ, ๋ณธ ๋ฐœ๋ช…์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์€ ๋น”ํฌ๋ฐ(Beamfirming)์— ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. Referring back to FIG. 14, the bonding wire antennas 250a, 250b, 250c, and 250d may be spaced apart at regular intervals. For example, the bonding wire antennas 250a, 250b, 250c, and 250d may be spaced at regular intervals with a spacing of lambda / 2 (ฮป: wavelength of a communication frequency in which the present invention is used). In the transceivers 210a, 210b, 210c, and 210d, functional blocks may be provided to delay signals through phase shifts and to overlap the delayed signals. Phases of the signals input to the amplifiers 230a, 230b, 230c, and 230d from the transceivers 210a, 210b, 210c, and 210d may be different. Signals input to the amplifiers 230a, 230b, 230c, and 230d may have a predetermined phase difference, respectively. The phases of the output signals 10, 20, 30, and 40 of the bonding wire antennas 250a, 250b, 250c, and 250d may have a predetermined difference, respectively. For example, the output signals 10, 20, 30, and 40 may each have a phase difference of 45 ยฐ. Thus, the communication module according to the present invention can be used for beamforming.

๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋“ค์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์˜ ์‹œ๋ฎฌ๋ ˆ์ด์…˜ ํ…Œ์ŠคํŠธ๊ฐ€ ์„ค๋ช…๋œ๋‹ค. Simulation test of the monopole bonding wire communication module according to embodiments of the present invention is described.

๋„ 16 ๋ฐ 17์€ ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋“ค์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ์„ ์‹œ๋ฎฌ๋ ˆ์ด์…˜ํ•œ ๊ฒฐ๊ณผ๋ฅผ ๋‚˜ํƒ€๋‚ด๋Š” ๊ทธ๋ž˜ํ”„์ด๋‹ค.16 and 17 are graphs illustrating simulation results of a monopole bonding wire communication module according to embodiments of the present invention.

๋„ 16์„ ์ฐธ์กฐํ•˜๋ฉด, ๊ทธ๋ž˜ํ”„์˜ ๊ฐ€๋กœ์ถ•์€ ์ฃผํŒŒ์ˆ˜๋ฅผ ๋‚˜ํƒ€๋‚ด๊ณ , ๊ทธ๋ž˜ํ”„์˜ ์„ธ๋กœ์ถ•์€ ์ถœ๋ ฅํŒŒ์›Œ๋ฅผ ๋‚˜ํƒ€๋‚ธ๋‹ค. ๊ทธ๋ž˜ํ”„์—์„œ๋„ ์•Œ ์ˆ˜ ์žˆ๋“ฏ์ด, ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋“ค์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ๋ณธ ์‹œ๋ฎฌ๋ ˆ์ด์…˜์—์„œ, 60GHz ์˜ ์ฃผํŒŒ์ˆ˜ ๋Œ€์—ญ์—์„œ ์‹ ํ˜ธ๋ฅผ ์„ฑ๊ณต์ ์œผ๋กœ ์†ก์‹ ํ•˜๊ฑฐ๋‚˜ ์ˆ˜์‹ ํ•˜์˜€๋‹ค. ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋“ค์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ์ƒ๊ธฐ ์‹œ๋ฎฌ๋ ˆ์ด์…˜ ๊ฒฐ๊ณผ์™€ ๊ฐ™์ด, 60GHz์™€ ๊ฐ™์€ ๊ณ ์ฃผํŒŒ์ˆ˜ ๋Œ€์—ญ์„ ์‚ฌ์šฉํ•œ ํ†ต์‹  ์‹œ์Šคํ…œ์—์„œ ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ์Œ์€ ๋ฌผ๋ก , ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋ฅผ ๋‹ฌ๋ฆฌํ•˜์—ฌ, ๋‹ค๋ฅธ ์ฃผํŒŒ์ˆ˜ ๋Œ€์—ญ์„ ์‚ฌ์šฉํ•˜๋Š” ํ†ต์‹  ์‹œ์Šคํ…œ์—์„œ๋„ ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. Referring to FIG. 16, the horizontal axis of the graph represents frequency, and the vertical axis of the graph represents output power. As can be seen from the graph, the monopole bonding wire antenna communication module according to the embodiments of the present invention successfully transmits or receives a signal in a frequency band of 60 GHz in this simulation. The monopole bonding wire antenna communication module according to the embodiments of the present invention may be used in a communication system using a high frequency band such as 60 GHz as the simulation result, as well as by using different frequency bands by varying the length of the bonding wire antenna. Can also be used in communication systems.

๋„ 17์„ ์ฐธ์กฐํ•˜๋ฉด, X ์ถ•์€ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๋ฐฐ์น˜ ๋ฐฉํ–ฅ์ผ ์ˆ˜ ์žˆ๊ณ , Y ์ถ• ๋ฐ Z ์ถ•์€ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์—์„œ ์ถœ๋ ฅ๋œ ์ถœ๋ ฅ์‹ ํ˜ธ์˜ ๋ฐฉํ–ฅ์ผ ์ˆ˜ ์žˆ๋‹ค. ๋„๋ฉด์— ๋„์‹œ๋œ ๋ฐ”์™€ ๊ฐ™์ด, ์ƒ๊ธฐ ์ถœ๋ ฅ์‹ ํ˜ธ๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์—์„œ ๋ฐฉ์‚ฌ๋˜์–ด, ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋กœ๋ถ€ํ„ฐ ์ถœ๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋“ค์— ๋”ฐ๋ฅธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์€ ์ƒ๊ธฐ ์‹œ๋ฎฌ๋ ˆ์ด์…˜ ๊ฒฐ๊ณผ์™€ ๊ฐ™์ด, ์‹ ํ˜ธ๋ฅผ ์ถœ๋ ฅํ•  ์ˆ˜ ์žˆ์–ด, ํ†ต์‹  ๋ชจ๋“ˆ์˜ ์•ˆํ…Œ๋‚˜๋กœ ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ด์— ๋”ฐ๋ผ, ์ดˆ์†Œํ˜•์˜ ์•ˆํ…Œ๋‚˜๋ฅผ ๊ฐ–๋Š” ๊ณ ์ง‘์ ํ™”์— ์ตœ์ ํ™”๋œ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. Referring to FIG. 17, the X axis may be a direction in which the bonding wire antenna is disposed, and the Y axis and Z axis may be directions of an output signal output from the bonding wire antenna. As shown in the figure, the output signal may be radiated from the bonding wire antenna and output from the bonding wire antenna. The monopole bonding wire antenna communication module according to the embodiments of the present invention may output a signal as shown in the simulation result, and thus may be used as an antenna of the communication module. Accordingly, a communication module optimized for high integration having an ultra small antenna can be provided.

(ํ†ต์‹  ๋ชจ๋“ˆ)(Communication module)

๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ(100)์ด ์„ค๋ช…๋œ๋‹ค. ๋„ 18์€ ๋ณธ ๋ฐœ๋ช…์˜ ์ œ1 ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๋„๋ฉด์ด๋‹ค. A communication module 100 according to an embodiment of the present invention is described. 18 is a diagram for describing a communication module according to a first embodiment of the present invention.

๋„ 18์„ ์ฐธ์กฐํ•˜๋ฉด, ๋ฐ˜๋„์ฒด ์นฉ(SC1)์ด ์ œ๊ณต๋œ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์€ ์†ก์ˆ˜์‹ ๋ถ€(Tx/Rx), ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1, Amp2, Amp3, Amp4) ๋ฐ ๋ณต์ˆ˜์˜ ์Šค์œ„์น˜ ์†Œ์ž(S1, S2, S3, S4)๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์Šค์œ„์น˜ ์†Œ์ž(S1~S4)๋Š” ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4)๋ฅผ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(Tx/Rx)์— ๊ฐ๊ฐ ์—ฐ๊ฒฐํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4)๋Š” ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier) ๋ฐ/๋˜๋Š” ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Ampilfier)๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4) ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜๋Š” CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์Šค์œ„์น˜ ์†Œ์ž(S1~S4)์— ์˜ํ•ด ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4)์˜ ๋™์ž‘ ์—ฌ๋ถ€๊ฐ€ ์ œ์–ด๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์Šค์œ„์น˜ ์†Œ์ž(S1~S4)๋Š” ํŠธ๋žœ์ง€์Šคํ„ฐ์ผ ์ˆ˜ ์žˆ๋‹ค. ๊ทธ ๋ฐ–์—, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์€ ๋ฉ”๋ชจ๋ฆฌ ์†Œ์ž, ๋งˆ์ดํฌ๋กœ ํ”„๋กœ์„ธ์„œ ์†Œ์ž ๋ฐ ๋‹ค์–‘ํ•œ ์ „์ž ์†Œ์ž๋ฅผ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. Referring to FIG. 18, a semiconductor chip SC1 is provided. The semiconductor chip SC1 may include a transceiver Tx / Rx, a plurality of amplifiers Amp1, Amp2, Amp3, and Amp4, and a plurality of switch elements S1, S2, S3, and S4. The plurality of switch elements S1 to S4 may connect the plurality of amplifiers Amp1 to Amp4 to the transceivers Tx / Rx, respectively. The plurality of amplifiers Amp1 to Amp4 may include a power amplifier and / or a low noise amplifier. At least one of the amplifiers Amp1 to Amp4 may be provided using a CMOS process. The operation of the plurality of amplifiers Amp1 to Amp4 may be controlled by the plurality of switch elements S1 to S4. The plurality of switch elements S1 to S4 may be transistors. In addition, the semiconductor chip SC1 may include a memory device, a microprocessor device, and various electronic devices.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1) ์ƒ์— ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ant1, Ant2, Ant3, Ant4: Ants)๊ฐ€ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants) ๊ฐ๊ฐ์˜ ์ผ๋‹จ ๋ฐ ํƒ€๋‹จ์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)๊ณผ ์ง์ ‘ ์ ‘์ด‰๋˜์–ด ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants)์˜ ์ƒ๊ธฐ ์ผ๋‹จ์„ ์ œ์™ธํ•œ ๋‚˜๋จธ์ง€ ๋ถ€๋ถ„ ์ค‘ ์ ์–ด๋„ ์ผ๋ถ€๋Š” ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด์นฉ(SC1)์œผ๋กœ๋ถ€ํ„ฐ ์ด๊ฒฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants) ๊ฐ๊ฐ์˜ ์ƒ๊ธฐ ์ผ๋‹จ ๋ฐ ์ƒ๊ธฐ ํƒ€๋‹จ์„ ์ œ์™ธํ•œ ๋ถ€๋ถ„์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์œผ๋กœ๋ถ€ํ„ฐ ์ด๊ฒฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants)์˜ ๋ชจ์–‘์€ ๋‹ค์–‘ํ•˜๊ฒŒ ๊ตฌํ˜„๋  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants)์˜ ์ƒ๊ธฐ ์ผ๋‹จ ๋ฐ ์ƒ๊ธฐ ํƒ€๋‹จ์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)๊ณผ ์ ‘์ด‰ํ•˜๋ฉด์„œ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants) ๊ฐ๊ฐ์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์˜ ์ƒ๋ถ€๋ฉด์œผ๋กœ๋ถ€ํ„ฐ ๋ณผ๋กํ•œ ์•„์น˜ํ˜•์˜ ๊ณก์„  ๋ชจ์–‘์„ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋‹ค. A plurality of antennas Ant1, Ant2, Ant3, and Ant4: Ants may be provided on the semiconductor chip SC1. One end and the other end of each of the antennas may be directly contacted with the semiconductor chip SC1. At least some of the remaining portions of the plurality of antennas except for one end may be spaced apart from the semiconductor chip SC1. For example, portions except the one end and the other end of each of the plurality of antennas may be spaced apart from the semiconductor chip SC1. Shapes of the plurality of antennas may be implemented in various ways. For example, while the one end and the other end of the plurality of antennas contact the semiconductor chip SC1, each of the plurality of antennas has an arcuate shape convex from an upper surface of the semiconductor chip SC1. It may have a curved shape.

์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants) ๊ฐ๊ฐ์˜ ์ƒ๊ธฐ ์ผ๋‹จ ๋ฐ ์ƒ๊ธฐ ํƒ€๋‹จ์„ ์ œ์™ธํ•œ ๋ถ€๋ถ„์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์œผ๋กœ๋ถ€ํ„ฐ ๋Œ์ถœ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants)๋Š” ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด์นฉ(SC1) ์ƒ์— ๋ฐฐ์น˜๋œ ๋ฐ˜ ์›ํ˜•์˜ ํ˜•ํƒœ์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants)์˜ ์ƒ๊ธฐ ์ผ๋‹จ๋“ค์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์Šค์œ„์น˜ ์†Œ์ž(S1~S4)์™€ ๊ฐ๊ฐ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants) ๊ฐ๊ฐ์˜ ๊ธธ์ด๋Š” ๋™์ผํ•  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants) ๊ฐ๊ฐ์˜ ๊ธธ์ด๋Š” 0.8mm~1mm ์ผ ์ˆ˜ ์žˆ๋‹ค. ๋„๋ฉด ์ƒ์—๋Š” 4๊ฐœ์˜ ์•ˆํ…Œ๋‚˜๋“ค(Ants)์ด ๋„์‹œ๋˜์—ˆ์ง€๋งŒ, 2~3 ๊ฐœ ๋˜๋Š” 5๊ฐœ ์ด์ƒ์˜ ์•ˆํ…Œ๋‚˜๊ฐ€ ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. Portions other than the one end and the other end of each of the antennas may protrude from the semiconductor chip SC1. The plurality of antennas may have a semicircular shape disposed on the semiconductor chip SC1. The ends of the plurality of antennas may be connected to the plurality of switch elements S1 to S4, respectively. Each of the antennas may have the same length. For example, each of the plurality of antennas may have a length of 0.8 mm to 1 mm. Although four antennas (Ants) are shown in the figure, two or three or five or more antennas may be arranged.

์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(Tx/Rx)๋กœ๋ถ€ํ„ฐ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4)๋กœ ์‹ ํ˜ธ๋“ค์ด ์ž…๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ด ๊ฒฝ์šฐ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4)๋Š” ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier)์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(Tx/Rx)์—์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4)๋กœ ์ž…๋ ฅ๋˜๋Š” ์ƒ๊ธฐ ์‹ ํ˜ธ๋“ค์€ ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์‹ ํ˜ธ๋ฅผ ์ž…๋ ฅ๋ฐ›์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants)๋Š” ๊ฐ๊ฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์„ ์ถœ๋ ฅํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants)์—์„œ ๊ฐ๊ฐ ์ถœ๋ ฅ๋œ ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์€ ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์ด ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ€์ง์œผ๋กœ์จ, ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์€ ์ƒํ˜ธ ๋ณด๊ฐ• ๊ฐ„์„ญ๋˜์–ด, ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•  ์ˆ˜ ์žˆ๋‹ค. Signals may be input from the transceiver Tx / Rx to the amplifiers Amp1 to Amp4. In this case, the plurality of amplifiers Amp1 to Amp4 may be power amplifiers. The signals input to the plurality of amplifiers Amp1 to Amp4 from the transceiver Tx / Rx may have the same phase. The plurality of antennas receiving the signal may output output signals, respectively. The output signals respectively output from the plurality of antennas may have the same phase. By having the output signals have the same phase, the output signals may be constructively interfered with each other to constitute one wide area signal.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์ด CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋œ ํ•˜๋‚˜์˜ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋Š” ๊ฒฝ์šฐ, ์ฆํญ๊ธฐ์˜ ์ถœ๋ ฅํŒŒ์›Œ์— ์˜ํ•œ ์ œ์•ฝ์œผ๋กœ, ์ฆํญ๊ธฐ์˜ ์‹ ๋ขฐ์„ฑ์ด ์ €ํ•˜๋  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ์ผ๋ฐ˜์ ์œผ๋กœ CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋œ ์ฆํญ๊ธฐ์˜ ๊ฒฝ์šฐ ํ•ซ ์บ๋ฆฌ์–ด ํšจ๊ณผ(Hot Carrier Effect) ๋“ฑ์— ์˜ํ•œ ์ œ์•ฝ์œผ๋กœ, ์‹ ๋ขฐ์„ฑ์„ ๊ฐ€์ง€๊ณ  ์‚ฌ์šฉํ•  ์ˆ˜ ์žˆ๋Š” ์ถœ๋ ฅ ํŒŒ์›Œ๋Š” 10dBm ๋‚ด์™ธ ์ผ ์ˆ˜ ์žˆ๋‹ค. ์ด์— ๋”ฐ๋ผ, CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋œ ์ฆํญ๊ธฐ๋Š” 30dBm ๋‚ด์™ธ์˜ ์ถœ๋ ฅ ํŒŒ์›Œ๋ฅผ ์š”๊ตฌํ•˜๋Š” ํ†ต์‹  ์‹œ์Šคํ…œ์— ์‚ฌ์šฉ๋  ์ˆ˜ ์—†๋Š” ์ œ์•ฝ์ด ์žˆ๋‹ค. ์ด์— ๋”ฐ๋ผ, ์ข…๋ž˜ 30dBm ๋‚ด์™ธ์˜ ์ถœ๋ ฅ ํŒŒ์›Œ๋ฅผ ์š”๊ตฌํ•˜๋Š” ํ†ต์‹  ์‹œ์Šคํ…œ์—์„œ๋Š” ํ™”ํ•ฉ๋ฌผ ๋ฐ˜๋„์ฒด๋กœ ๊ตฌํ˜„๋œ ์ฆํญ๊ธฐ๊ฐ€ ์‚ฌ์šฉ๋˜์—ˆ๋‹ค. When the semiconductor chip SC1 includes one amplifier provided by using a CMOS process, the reliability of the amplifier may be lowered due to the constraint of the output power of the amplifier. For example, in general, an amplifier provided using a CMOS process is limited by a hot carrier effect, and the like, and the output power that can be used with reliability may be about 10 dBm. Accordingly, there is a limitation that amplifiers provided using CMOS processes cannot be used in communication systems that require output powers of around 30 dBm. Accordingly, in a communication system requiring an output power of about 30 dBm, an amplifier implemented with a compound semiconductor has been used.

๋‹ค๋งŒ, ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅด๋ฉด, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants)๊ฐ€ ๊ฐ๊ฐ ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ–๋Š” ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์„ ์ถœ๋ ฅํ•˜์—ฌ ํ•˜๋‚˜์˜ ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•จ์œผ๋กœ์จ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4)์˜ ๊ฐ๊ฐ์˜ ์ถœ๋ ฅํŒŒ์›Œ๋“ค์€, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1) ์ƒ์— ํ•˜๋‚˜์˜ ์ฆํญ๊ธฐ๊ฐ€ ๋ฐฐ์น˜๋˜๋Š” ๊ฒฝ์šฐ์™€ ๋น„๊ตํ•˜์—ฌ, ์ž‘์„ ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์ด 10dBm ์˜ ์ถœ๋ ฅ ํŒŒ์›Œ๋ฅผ ๊ฐ–๋Š” CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋œ 6๊ฐœ์˜ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋Š” ๊ฒฝ์šฐ, ๊ฐ๊ฐ์˜ ์ฆํญ๊ธฐ๊ฐ€ ์ถœ๋ ฅํ•˜๋Š” 10dBm์˜ ์ถœ๋ ฅ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ 28dBm ๋‚ด์™ธ์˜ ๊ณ ์ถœ๋ ฅ ๊ด‘์—ญ ์‹ ํ˜ธ๋กœ ํ•ฉ์ณ์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ด์— ๋”ฐ๋ผ, 28dBm์˜ ์ถœ๋ ฅํŒŒ์›Œ๋ฅผ ๊ฐ–๋Š” ์ฆํญ๊ธฐ ๋ฐฐ์น˜๋œ ๊ฒƒ๊ณผ ๋™์ผํ•œ ํšจ๊ณผ๋ฅผ ํ˜„์ถœํ•  ์ˆ˜ ์žˆ๋‹ค. ๋”ฐ๋ผ์„œ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4)๋Š” ํ™”ํ•ฉ๋ฌผ ๋ฐ˜๋„์ฒด๋กœ ๊ตฌํ˜„๋  ์ˆ˜ ์žˆ์Œ์€ ๋ฌผ๋ก , ๊ฐ€๊ฒฉ์ด ์ €๋ ดํ•œ CMOS๋กœ ๊ตฌํ˜„๋  ์ˆ˜๋„ ์žˆ์–ด, ์ €๋ ดํ•œ ๊ฐ€๊ฒฉ์˜ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. However, according to an exemplary embodiment of the present invention, the plurality of antennas output the output signals each having the same phase to form one wide area signal, so that each of the plurality of amplifiers Amp1 to Amp4 The output powers may be small compared with the case where one amplifier is disposed on the semiconductor chip SC1. For example, when the semiconductor chip SC1 includes six amplifiers provided by using a CMOS process having an output power of 10 dBm, the output signals of 10 dBm output by each amplifier are about 28 dBm high power wide area signals. Can be combined. Accordingly, the same effect as that of the amplifier arrangement having an output power of 28 dBm can be exhibited. Accordingly, the plurality of amplifiers Amp1 to Amp4 may not only be implemented as compound semiconductors, but also may be implemented as low cost CMOS, and thus a low cost communication module may be provided.

์ผ๋ฐ˜์ ์œผ๋กœ ํ†ต์‹  ๋ชจ๋“ˆ์— ํฌํ•จ๋œ ์ฆํญ๊ธฐ๋ฅผ ์„ค๊ณ„ํ•˜๋Š” ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋Š” ํ†ต์‹  ๋ชจ๋“ˆ์˜ ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ์— ์ƒ์‘ํ•˜๋Š” ์ถœ๋ ฅํŒŒ์›Œ๋ฅผ ๊ฐ–๋„๋ก ์„ค๊ณ„๋œ๋‹ค. ์ด์— ๋”ฐ๋ผ, ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ์—์„œ ์ตœ๊ณ  ํšจ์œจ์„ ๋‚˜ํƒ€๋‚ด๋Š” ์ฆํญ๊ธฐ์˜ ํŠน์„ฑ์ƒ, ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ์— ๋น„ํ•˜์—ฌ ๋‚ฎ์€ ์ถœ๋ ฅํŒŒ์›Œ๋กœ ๋™์ž‘ํ•˜๋Š” ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ์˜ ํšจ์œจ์ด ๋‚ฎ์•„์งˆ ์ˆ˜ ์žˆ๋‹ค. In general, when designing an amplifier included in the communication module, the amplifier is designed to have an output power corresponding to the maximum output power of the communication module. Accordingly, when the communication module operates at a lower output power than the maximum output power, the efficiency of the amplifier may be lowered due to the characteristics of the amplifier having the highest efficiency at the maximum output power.

๋ฐ˜๋ฉด, ๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅด๋ฉด, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1) ์ƒ์— ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(Tx/Rx) ๋ฐ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4)๋ฅผ ๊ฐ๊ฐ ์—ฐ๊ฒฐํ•˜๋Š” ๋ณต์ˆ˜์˜ ์Šค์œ„์น˜ ์†Œ์ž(S1~S4)๊ฐ€ ๋ฐฐ์น˜๋จ์œผ๋กœ์จ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4) ๊ฐ๊ฐ์˜ ๋™์ž‘ ์—ฌ๋ถ€๊ฐ€ ์ œ์–ด๋  ์ˆ˜ ์žˆ๋‹ค. ๋”ฐ๋ผ์„œ, ํ•„์š”ํ•œ ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅ์˜ ์„ธ๊ธฐ์— ๋”ฐ๋ผ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4) ๊ฐ๊ฐ์˜ ๋™์ž‘์ด ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์Šค์œ„์น˜(S1~S4)์— ์˜ํ•ด ์กฐ์ ˆ๋  ์ˆ˜ ์žˆ๋‹ค. ์ฆ‰, ๊ฐ๊ฐ์˜ ์ฆํญ๊ธฐ๋“ค์˜ ๋™์ž‘ ์—ฌ๋ถ€๋ฅผ ์ œ์–ดํ•˜์—ฌ, ํ†ต์‹  ๋ชจ๋“ˆ์ด ํ•„์š”๋กœ ํ•˜๋Š” ์ถœ๋ ฅ์‹ ํ˜ธ์˜ ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ๋ฅผ ๊ตฌํ˜„ํ•  ์ˆ˜ ์žˆ์–ด, ์ตœ๋Œ€ ์ถœ๋ ฅ ํŒŒ์›Œ๋ณด๋‹ค ๋‚ฎ์€ ์ถœ๋ ฅ ํŒŒ์›Œ๋กœ ํ†ต์‹  ๋ชจ๋“ˆ์ด ๋™์ž‘ํ•˜๋Š” ๊ฒฝ์šฐ์—๋„, ๊ฐ๊ฐ์˜ ์ฆํญ๊ธฐ๋“ค์€ ์ตœ๋Œ€์˜ ์ถœ๋ ฅ ํŒŒ์›Œ๋ฅผ ๊ฐ€์ง€๊ณ  ๋™์ž‘ํ•  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ํ•„์š”ํ•œ ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์„ธ๊ธฐ๊ฐ€ 28dBm์ด๊ณ , ์ฆํญ๊ธฐ์˜ ์ตœ๋Œ€ ์ถœ๋ ฅ์ด 10dBm์ด๊ณ , ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์ด 8๊ฐœ์˜ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋Š” ๊ฒฝ์šฐ, ์ƒ๊ธฐ 8๊ฐœ์˜ ์ฆํญ๊ธฐ ์ค‘์—์„œ 6๊ฐœ์˜ ์ฆํญ๊ธฐ๋“ค์ด 10dBm๋กœ ๋™์ž‘ํ•˜์—ฌ, 28dBm์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ์ถœ๋ ฅํ•  ์ˆ˜ ์žˆ๋‹ค. ํ†ต์‹  ๋ชจ๋“ˆ์—์„œ ํ•„์š”ํ•œ ์ถœ๋ ฅํŒŒ์›Œ์— ๋”ฐ๋ผ, ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋“ค์€ ์ตœ๋Œ€ ์ถœ๋ ฅํŒŒ์›Œ๋กœ ๋™์ž‘ํ•  ์ˆ˜ ์žˆ๋‹ค. ์ด์— ๋”ฐ๋ผ, ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ์ค‘์—์„œ ๋™์ž‘ํ•˜๋Š” ์ฆํญ๊ธฐ๋“ค์€ ์ตœ๊ณ  ํšจ์œจ์—์„œ ๋™์ž‘ํ•  ์ˆ˜ ์žˆ๊ณ , ๋”ฐ๋ผ์„œ, ๊ณ ํšจ์œจ์— ์ตœ์ ํ™”๋œ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. On the other hand, according to an embodiment of the present invention, a plurality of switch elements (S1 ~ S4) for connecting the transceiver (Tx / Rx) and the plurality of amplifiers (Amp1 ~ Amp4) on the semiconductor chip (SC1), respectively By the arrangement, whether each of the plurality of amplifiers Amp1 to Amp4 is operated may be controlled. Therefore, according to the intensity of the output of the wide-area signal required, the operation of each of the plurality of amplifiers Amp1 to Amp4 may be adjusted by the plurality of switches S1 to S4. That is, by controlling the operation of each of the amplifiers, it is possible to implement the maximum output power of the output signal required by the communication module, even if the communication module operates at an output power lower than the maximum output power, each amplifier is the maximum It can operate with output power of. For example, if the necessary strength of the wide area signal is 28 dBm, the maximum output of the amplifier is 10 dBm, and the semiconductor chip SC1 includes eight amplifiers, six of the eight amplifiers operate at 10 dBm. It can output 28dBm wide area signal. Depending on the output power required by the communication module, the amplifiers can operate at maximum output power. Accordingly, amplifiers operating among the plurality of amplifiers can operate at the highest efficiency, and thus a communication module optimized for high efficiency can be provided.

์ƒ๊ธฐ ์•ˆํ…Œ๋‚˜(Ants)๋ฅผ ํ†ตํ•ด ์‹ ํ˜ธ๋“ค์ด ์ˆ˜์‹ ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants)์—์„œ ์ˆ˜์‹ ๋œ ์‹ ํ˜ธ๋“ค์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4)๋ฅผ ๊ฑฐ์ณ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(Tx/Rx)๋กœ ์ž…๋ ฅ๋  ์ˆ˜ ์žˆ๋‹ค. ์ด ๊ฒฝ์šฐ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4)๋Š” ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Amplifier)์ผ ์ˆ˜ ์žˆ๋‹ค. Signals may be received via the antenna. Signals received from the plurality of antennas may be input to the transceiver Tx / Rx through the plurality of amplifiers Amp1 to Amp4. In this case, the plurality of amplifiers Amp1 to Amp4 may be low noise amplifiers.

๋ณธ ๋ฐœ๋ช…์˜ ์ผ ์‹ค์‹œ ์˜ˆ์˜ ๋ณ€ํ˜• ์˜ˆ๊ฐ€ ๋„ 18์„ ์žฌ์ฐจ ์ฐธ์กฐํ•˜์—ฌ ์„ค๋ช…๋œ๋‹ค. A modification of one embodiment of the present invention is described with reference to FIG. 18 again.

๋„ 18์„ ๋‹ค์‹œ ์ฐธ์กฐํ•˜๋ฉด, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants)๋Š” ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1) ์ƒ์—์„œ ์ผ์ •ํ•œ ๊ฐ„๊ฒฉ์œผ๋กœ ์„œ๋กœ ์ด๊ฒฉ๋˜์–ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants)๋Š” ฮป/2 (ฮป: ๋ณธ ๋ฐœ๋ช…์ด ์‚ฌ์šฉ๋˜๋Š” ํ†ต์‹  ์ฃผํŒŒ์ˆ˜์˜ ํŒŒ์žฅ)์˜ ๊ฐ„๊ฒฉ์„ ๊ฐ€์ง€๊ณ , ์ผ์ •ํ•˜๊ฒŒ ์ด๊ฒฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(Tx/Rx) ๋‚ด๋ถ€์—๋Š” ์œ„์ƒ ์ฒœ์ด(phase shift)๋ฅผ ํ†ตํ•˜์—ฌ ์‹ ํ˜ธ๋ฅผ ์ง€์—ฐ์‹œํ‚ค๊ณ , ์ƒ๊ธฐ ์ง€์—ฐ๋œ ์‹ ํ˜ธ๋“ค์„ ์ค‘์ฒฉํ•˜๋Š” ๊ธฐ๋Šฅ ๋ธ”๋Ÿญ๋“ค์ด ๊ตฌ๋น„๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€(Tx/Rx)์—์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4)๋กœ ์ž…๋ ฅ๋˜๋Š” ์‹ ํ˜ธ๋“ค์˜ ์œ„์ƒ์€ ์ƒ์ดํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ(Amp1~Amp4)๋กœ ์ž…๋ ฅ๋˜๋Š” ์‹ ํ˜ธ๋“ค์€ ๊ฐ๊ฐ ์ผ์ •ํ•œ ์œ„์ƒ์˜ ์ฐจ์ด๋ฅผ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋‹ค. ๋”ฐ๋ผ์„œ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants)์˜ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์˜ ์œ„์ƒ์€ ๊ฐ๊ฐ ์ผ์ •ํ•œ ์ฐจ์ด๋ฅผ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋‹ค. ์˜ˆ๋ฅผ ๋“ค์–ด, ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์€ ๊ฐ๊ฐ 45ยฐ์˜ ์œ„์ƒ์ฐจ์ด๋ฅผ ๊ฐ€์งˆ ์ˆ˜ ์žˆ๋‹ค. ์ด๋กœ์จ, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜(Ants)๋“ค์€ ๋น”ํฌ๋ฐ(Beamfirming)์— ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค.Referring back to FIG. 18, the plurality of antennas Ants may be spaced apart from each other at regular intervals on the semiconductor chip SC1. For example, the plurality of antennas may be spaced at regular intervals at intervals of ฮป / 2 (ฮป: wavelength of a communication frequency in which the present invention is used). In the transceiver Tx / Rx, functional blocks may be provided to delay a signal through a phase shift and overlap the delayed signals. The phases of the signals input to the plurality of amplifiers Amp1 to Amp4 from the transceiver Tx / Rx may be different. Signals input to the plurality of amplifiers Amp1 to Amp4 may each have a predetermined phase difference. Accordingly, the phases of the output signals of the plurality of antennas may have a constant difference. For example, the output signals may each have a phase difference of 45 ยฐ. As a result, the plurality of antennas may be used for beamforming.

๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์ด ์„ค๋ช…๋œ๋‹ค. ๋„ 19 ๋ฐ 20์€ ๋ณธ ๋ฐœ๋ช…์˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๊ฒƒ์œผ๋กœ, ๋„ 20์€ ๋„ 19์˜ I-I'๋ฅผ ๋”ฐ๋ผ ์ทจํ•œ ๋‹จ๋ฉด๋„์ด๋‹ค. A communication module according to another embodiment of the present invention is described. 19 and 20 illustrate a communication module according to another exemplary embodiment. FIG. 20 is a cross-sectional view taken along line II โ€ฒ of FIG. 19.

๋„ 19 ๋ฐ ๋„ 20์„ ์ฐธ์กฐํ•˜๋ฉด, ๋„ 18์„ ์ฐธ์กฐํ•˜์—ฌ ์„ค๋ช…๋œ ํ†ต์‹  ๋ชจ๋“ˆ(100)์ด ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. ๋ฐ˜๋„์ฒด ์นฉ(SC1) ์ƒ์— ๋ณธ๋”ฉ ํŒจ๋“œ(122)๊ฐ€ ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ(122)๋Š” ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์˜ ๊ฐ€์žฅ ์ž๋ฆฌ๋ฅผ ๋”ฐ๋ผ ๋ณต์ˆ˜ ๊ฐœ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. 19 and 20, the communication module 100 described with reference to FIG. 18 may be provided. The bonding pads 122 may be disposed on the semiconductor chip SC1. A plurality of bonding pads 122 may be provided along edges of the semiconductor chip SC1.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์ด ์žฅ์ฐฉ(mount)๋˜๋Š” ๊ธฐํŒ(110)์ด ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์€ ์ƒ๊ธฐ ๊ธฐํŒ(110)์˜ ์ƒ๋ถ€๋ฉด ์ƒ์— ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(110)์˜ ๋ฉด์ ์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์˜ ๋ฉด์ ๋ณด๋‹ค ๋„“์„ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(110)์€ ํŒจํ‚ค์ง€์šฉ ๊ธฐํŒ ์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(110)์˜ ํ•˜๋ถ€๋ฉด ์ƒ์— ์ ˆ์—ฐ ๋ฌผ์งˆ(136)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(110)์˜ ํ•˜๋ถ€๋ฉด ์ƒ์— ์ƒ๊ธฐ ์ ˆ์—ฐ ๋ฌผ์งˆ(136)์„ ๊ด€ํ†ตํ•˜๋Š” ์ ‘ํ•ฉ ์ „๊ทน(138) ๋ฐ ์†”๋”๋ณผ(139) ๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(110)์˜ ์ƒ๋ถ€๋ฉด ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1) ์‚ฌ์ด์— ์ ‘์ฐฉ ํŒจ๋“œ(134) ๋ฐ ์ ‘์ฐฉ ๋ฌผ์งˆ(132)์ด ์ฐจ๋ก€๋กœ ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ ‘์ฐฉ ํŒจ๋“œ(134)๋Š” ๋„์ „ ๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ด ๊ฒฝ์šฐ, ์ƒ๊ธฐ ์ ‘์ฐฉ ํŒจ๋“œ(134) ๊ทธ๋ผ์šด๋“œ์™€ ์—ฐ๊ฒฐ์„ ์œ„ํ•ด ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค. ์ด์™€๋Š” ๋‹ฌ๋ฆฌ, ์ƒ๊ธฐ ์ ‘์ฐฉ ํŒจ๋“œ(134)๋Š” ์ ˆ์—ฐ๋ฌผ์งˆ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ ‘์ฐฉ ๋ฌผ์งˆ(132)์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์„ ์ƒ๊ธฐ ๊ธฐํŒ(110)์˜ ์ƒ๋ถ€๋ฉด ์ƒ์— ๊ณ ์ •์‹œํ‚ฌ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์€ ์ƒ๊ธฐ ๊ธฐํŒ(110) ์ƒ์— ๋ณผ ๊ทธ๋ฆฌ๋“œ ์–ด๋ ˆ์ด ํŒจํ‚ค์ง€ ๊ตฌ์กฐ๋กœ ์‹ค์žฅ๋  ์ˆ˜ ์žˆ๋‹ค. The substrate 110 on which the semiconductor chip SC1 is mounted may be provided. The semiconductor chip SC1 may be disposed on an upper surface of the substrate 110. The area of the substrate 110 may be larger than the area of the semiconductor chip SC1. The substrate 110 may be a substrate for a package. An insulating material 136 may be disposed on the bottom surface of the substrate 110. Junction electrodes 138 and solder balls 139 penetrating the insulating material 136 may be disposed on the lower surface of the substrate 110. An adhesive pad 134 and an adhesive material 132 may be sequentially disposed between the upper surface of the substrate 110 and the semiconductor chip SC1. The adhesive pad 134 may include a conductive material. In this case, the adhesive pad 134 may be used for connection with the ground. Alternatively, the adhesive pad 134 may include an insulating material. The adhesive material 132 may fix the semiconductor chip SC1 on the upper surface of the substrate 110. The semiconductor chip SC1 may be mounted on the substrate 110 in a ball grid array package structure.

์ƒ๊ธฐ ๊ธฐํŒ(110)์˜ ์ƒ๊ธฐ ์ƒ๋ถ€๋ฉด ์ƒ์— ์ ‘์† ํŒจ๋“œ(126)๊ฐ€ ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ ‘์† ํŒจ๋“œ(126)๋Š” ์ƒ๊ธฐ ๊ธฐํŒ(110)์˜ ๊ฐ€์žฅ์ž๋ฆฌ๋ฅผ ๋”ฐ๋ผ ๋ณต์ˆ˜ ๊ฐœ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ ‘์† ํŒจ๋“œ(126) ๋ฐ ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ(122)๋ฅผ ์—ฐ๊ฒฐํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด(124)๊ฐ€ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด(124)๋Š” ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์— ํฌํ•จ๋œ ๋‹ค์–‘ํ•œ ์ „์ž ์†Œ์ž๋ฅผ ์ƒ๊ธฐ ๊ธฐํŒ(110)๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐํ•  ์ˆ˜ ์žˆ๋‹ค. The connection pad 126 may be disposed on the upper surface of the substrate 110. The connection pad 126 may be provided in plural along the edge of the substrate 110. A bonding wire 124 connecting the connection pad 126 and the bonding pad 122 may be provided. The bonding wire 124 may electrically connect various electronic elements included in the semiconductor chip SC1 with the substrate 110.

๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ(300)์ด ์„ค๋ช…๋œ๋‹ค. ๋„ 21 ๋ฐ ๋„ 22๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๊ฒƒ์œผ๋กœ, ๋„ 22๋Š” ๋Š” ๋„ 21์˜ II-II'๋ฅผ ๋”ฐ๋ผ ์ทจํ•œ ๋‹จ๋ฉด๋„์ด๋‹ค. A communication module 300 according to another embodiment of the present invention is described. 21 and 22 illustrate a communication module according to another embodiment of the present invention, and FIG. 22 is a cross-sectional view taken along line II-II 'of FIG. 21.

๋„ 21 ๋ฐ ๋„ 22๋ฅผ ์ฐธ์กฐํ•˜๋ฉด, ๋„ 1 ์„ ์ฐธ์กฐํ•˜์—ฌ ์„ค๋ช…๋œ ํ†ต์‹  ๋ชจ๋“ˆ(100)์ด ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. ๋ฐ˜๋„์ฒด ์นฉ(SC1)์€ ๊ธฐํŒ(110)์˜ ์ƒ๋ถ€๋ฉด ์ƒ์— ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1) ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ(110) ์‚ฌ์ด์— ์ ‘์ฐฉ ํŒจ๋“œ(112)๊ฐ€ ๋ฐฐ์น˜๋˜์–ด, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์€ ์ƒ๊ธฐ ๊ธฐํŒ(110)์— ๊ณ ์ •๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(110)์€ ๋„ 19 ๋ฐ ๋„ 20์„ ์ฐธ์กฐํ•˜์—ฌ ์„ค๋ช…๋œ ๊ธฐํŒ(110)์ผ ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(110)์˜ ํ•˜๋ถ€๋ฉด ์ƒ์— ๋„ 19 ๋ฐ ๋„ 20์„ ์ฐธ์กฐํ•˜์—ฌ ์„ค๋ช…๋œ ์ ‘ํ•ฉ ์ „๊ทน(138), ์†”๋”๋ณผ(139) ๋ฐ ์ ˆ์—ฐ๋ฌผ์งˆ(136)์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค.21 and 22, the communication module 100 described with reference to FIG. 1 may be provided. The semiconductor chip SC1 may be disposed on the upper surface of the substrate 110. An adhesive pad 112 may be disposed between the semiconductor chip SC1 and the substrate 110 so that the semiconductor chip SC1 may be fixed to the substrate 110. The substrate 110 may be the substrate 110 described with reference to FIGS. 19 and 20. The junction electrode 138, the solder ball 139, and the insulating material 136 described with reference to FIGS. 19 and 20 may be disposed on the lower surface of the substrate 110.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์€ ์ ‘์† ์ „๊ทน(142)์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(110)์˜ ์ƒ๋ถ€๋ฉด ์ƒ์— ์ ‘์† ํŒจ๋“œ(144)๊ฐ€ ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ ‘์† ํŒจ๋“œ(144)๋Š” ์ƒ๊ธฐ ๊ธฐํŒ(110)์˜ ์ƒ๋ถ€๋ฉด ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1) ์‚ฌ์ด์— ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ ‘์† ํŒจ๋“œ(142), ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1)์„ ๊ด€ํ†ตํ•˜์—ฌ ์ƒ๊ธฐ ์ ‘์† ํŒจ๋“œ(144)์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋˜๋Š” ๋น„์•„ ์ฝ˜ํƒ ํ”Œ๋Ÿฌ๊ทธ(140)๊ฐ€ ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋น„์•„ ์ฝ˜ํƒ ํ”Œ๋Ÿฌ๊ทธ(140)๋Š” ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ(SC1) ๋‚ด์˜ ๋‹ค์–‘ํ•œ ์ „์ž ์†Œ์ž์™€ ์ƒ๊ธฐ ๊ธฐํŒ(110)์„ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐํ•  ์ˆ˜ ์žˆ๋‹ค. The semiconductor chip SC1 may include a connection electrode 142. The connection pad 144 may be disposed on the upper surface of the substrate 110. The connection pad 144 may be interposed between an upper surface of the substrate 110 and the semiconductor chip SC1. A via contact plug 140 may be provided through the connection pad 142 and the semiconductor chip SC1 to be electrically connected to the connection pad 144. The via contact plug 140 may electrically connect various electronic devices in the semiconductor chip SC1 and the substrate 110.

๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ(400)์ด ์„ค๋ช…๋œ๋‹ค. ๋„ 23 ๋ฐ ๋„ 24๋Š” ๋ณธ ๋ฐœ๋ช…์˜ ๋˜ ๋‹ค๋ฅธ ์‹ค์‹œ ์˜ˆ์— ๋”ฐ๋ฅธ ํ†ต์‹  ๋ชจ๋“ˆ์„ ์„ค๋ช…ํ•˜๊ธฐ ์œ„ํ•œ ๊ฒƒ์œผ๋กœ, ๋„ 24๋Š” ๋„ 23์˜ III-III'๋ฅผ ๋”ฐ๋ผ ์ทจํ•œ ๋‹จ๋ฉด๋„์ด๋‹ค. A communication module 400 according to another embodiment of the present invention is described. 23 and 24 illustrate a communication module according to another embodiment of the present invention, and FIG. 24 is a cross-sectional view taken along line III-III โ€ฒ of FIG. 23.

๋„ 23 ๋ฐ ๋„ 24๋ฅผ ์ฐธ์กฐํ•˜๋ฉด, ๋„ 21 ๋ฐ ๋„ 22๋ฅผ ์ฐธ์กฐํ•˜์—ฌ ์„ค๋ช…๋œ ํ†ต์‹  ๋ชจ๋“ˆ(300)์ด ์ œ๊ณต๋  ์ˆ˜ ์žˆ๋‹ค. ๋ฐ˜๋„์ฒด ์นฉ(SC1) ๋ฐ ๊ธฐํŒ(110) ์‚ฌ์ด์— ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(SC2, SC3)์ด ๊ฐœ์žฌ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(SC2, SC3)์€ ๋ฉ”๋ชจ๋ฆฌ ์†Œ์ž ๋ฐ ๋งˆ์ดํฌ๋กœ ํ”„๋กœ์„ธ์„œ ์†Œ์ž ๋“ฑ์„ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ๋„๋ฉด์—๋Š” 2๊ฐœ์˜ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(SC2, SC3)์ด ๋„์‹œ๋˜์—ˆ์ง€๋งŒ, 1 ๊ฐœ ํ˜น์€ 2๊ฐœ ์ด์ƒ์˜ ๋ฐ˜๋„์ฒด ์นฉ๋“ค์ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. 23 and 24, the communication module 300 described with reference to FIGS. 21 and 22 may be provided. Additional semiconductor chips SC2 and SC3 may be interposed between the semiconductor chip SC1 and the substrate 110. The additional semiconductor chips SC2 and SC3 may include a memory device and a microprocessor device. Although two additional semiconductor chips SC2 and SC3 are shown in the figure, one or two or more semiconductor chips may be disposed.

์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(SC1~SC3)์€ ์ ‘์† ์ „๊ทน(142)์„ ๊ฐ๊ฐ ํฌํ•จํ•  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๊ธฐํŒ(110) ์ƒ์— ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(SC1~SC3)์ด ์ ์ธต๋  ์ˆ˜ ์žˆ๋‹ค. ์ ์ธต๋œ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(SC1~SC3)์€ ์ ‘์ฐฉ ํŒจ๋“œ๋“ค(112, 113, 114)์— ์˜ํ•ด ์ƒ๊ธฐ ๊ธฐํŒ(110) ์ƒ์— ๊ณ ์ •๋˜์–ด ๋ฐฐ์น˜๋  ์ˆ˜ ์žˆ๋‹ค. ๋น„์•„ ์ฝ˜ํƒ ํ”Œ๋Ÿฌ๊ทธ(140)๋Š” ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(SC1~SC3) ๋ฐ ์ ‘์† ์ „๊ทน๋“ค(142)์„ ๊ด€ํ†ตํ•˜์—ฌ ์ƒ๊ธฐ ๊ธฐํŒ(110) ์ƒ์— ๋ฐฐ์น˜๋œ ์ ‘์† ํŒจ๋“œ(144)์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋  ์ˆ˜ ์žˆ๋‹ค. ์ƒ๊ธฐ ๋น„์•„ ์ฝ˜ํƒ ํ”Œ๋Ÿฌ๊ทธ(140)๋Š” ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๋“ค(SC1~SC3) ๋‚ด์˜ ๋‹ค์–‘ํ•œ ์ „์ž ์†Œ์ž์™€ ์ƒ๊ธฐ ๊ธฐํŒ(110)์„ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐํ•  ์ˆ˜ ์žˆ๋‹ค. The semiconductor chips SC1 to SC3 may include connection electrodes 142, respectively. The semiconductor chips SC1 to SC3 may be stacked on the substrate 110. The stacked semiconductor chips SC1 to SC3 may be fixedly disposed on the substrate 110 by adhesive pads 112, 113, and 114. The via contact plug 140 may be electrically connected to the connection pad 144 disposed on the substrate 110 through the semiconductor chips SC1 to SC3 and the connection electrodes 142. The via contact plug 140 may electrically connect various electronic devices in the semiconductor chips SC1 to SC3 and the substrate 110.

์ด์ƒ์˜ ์ƒ์„ธํ•œ ์„ค๋ช…์€ ๋ณธ ๋ฐœ๋ช…์„ ์˜ˆ์‹œํ•˜๊ณ  ์„ค๋ช…ํ•˜๋Š” ๊ฒƒ์ด๋‹ค. ๋˜ํ•œ, ์ „์ˆ ํ•œ ๋‚ด์šฉ์€ ๋ณธ ๋ฐœ๋ช…์˜ ๋ฐ”๋žŒ์งํ•œ ์‹ค์‹œ ํ˜•ํƒœ๋ฅผ ๋‚˜ํƒ€๋‚ด๊ณ  ์„ค๋ช…ํ•˜๋Š” ๊ฒƒ์— ๋ถˆ๊ณผํ•˜๋ฉฐ, ์ „์ˆ ํ•œ ๋ฐ”์™€ ๊ฐ™์ด ๋ณธ ๋ฐœ๋ช…์€ ๋‹ค์–‘ํ•œ ๋‹ค๋ฅธ ์กฐํ•ฉ, ๋ณ€๊ฒฝ ๋ฐ ํ™˜๊ฒฝ์—์„œ ์‚ฌ์šฉํ•  ์ˆ˜ ์žˆ์œผ๋ฉฐ, ๋ณธ ๋ช…์„ธ์„œ์— ๊ฐœ์‹œ๋œ ๋ฐœ๋ช…์˜ ๊ฐœ๋…์˜ ๋ฒ”์œ„, ์ €์ˆ ํ•œ ๊ฐœ์‹œ ๋‚ด์šฉ๊ณผ ๊ท ๋“ฑํ•œ ๋ฒ”์œ„ ๋ฐ/๋˜๋Š” ๋‹น์—…๊ณ„์˜ ๊ธฐ์ˆ  ๋˜๋Š” ์ง€์‹์˜ ๋ฒ”์œ„ ๋‚ด์—์„œ ๋ณ€๊ฒฝ ๋˜๋Š” ์ˆ˜์ •์ด ๊ฐ€๋Šฅํ•˜๋‹ค. ๋”ฐ๋ผ์„œ, ์ด์ƒ์˜ ๋ฐœ๋ช…์˜ ์ƒ์„ธํ•œ ์„ค๋ช…์€ ๊ฐœ์‹œ๋œ ์‹ค์‹œ ์ƒํƒœ๋กœ ๋ณธ ๋ฐœ๋ช…์„ ์ œํ•œํ•˜๋ ค๋Š” ์˜๋„๊ฐ€ ์•„๋‹ˆ๋‹ค. ๋˜ํ•œ, ์ฒจ๋ถ€๋œ ์ฒญ๊ตฌ๋ฒ”์œ„๋Š” ๋‹ค๋ฅธ ์‹ค์‹œ ์ƒํƒœ๋„ ํฌํ•จํ•˜๋Š” ๊ฒƒ์œผ๋กœ ํ•ด์„๋˜์–ด์•ผ ํ•œ๋‹ค.The foregoing detailed description illustrates and describes the present invention. In addition, the foregoing description merely shows and describes preferred embodiments of the present invention, and as described above, the present invention can be used in various other combinations, modifications, and environments, and the scope of the concept of the invention disclosed in the present specification and writing Changes or modifications may be made within the scope equivalent to the disclosure and / or within the skill or knowledge of the art. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed as including other embodiments.

๋ณธ ๋ฐœ๋ช…์˜ ์‹ค์‹œ ์˜ˆ๋“ค์€ ํ†ต์‹  ๋ชจ๋“ˆ์— ์‚ฌ์šฉ๋  ์ˆ˜ ์žˆ๋‹ค.Embodiments of the present invention may be used in a communication module.

Claims (57)

๊ธฐํŒ ์ƒ์˜ ๋ฐ˜๋„์ฒด ์นฉ;A semiconductor chip on a substrate; ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์˜ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ; ๊ทธ๋ฆฌ๊ณ A plurality of bonding pads on the semiconductor chip; And ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋˜๊ณ , ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•˜๋Š” ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.Bonding wire antenna communication module electrically connected to the plurality of bonding pads, comprising a plurality of bonding wire antenna for transmitting and receiving signals. ์ œ1 ํ•ญ์— ์žˆ์–ด์„œ,According to claim 1, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And the semiconductor chip comprises a plurality of amplifiers electrically connected to the plurality of bonding pads. ์ œ2 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 2, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋Š” ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier) ๋ฐ ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Amplifier) ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜๋ฅผ ํฌํ•จํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ํ†ต์‹  ๋ชจ๋“ˆ.And the plurality of amplifiers include at least one of a power amplifier and a low noise amplifier. ์ œ2 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 2, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜์˜ ์ฆํญ๊ธฐ๋Š” CMOS๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.At least one amplifier of the plurality of amplifiers is provided using a CMOS process. ์ œ2 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 2, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ์™€ ์—ฐ๊ฒฐ๋œ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ํฌํ•จํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.The semiconductor chip includes a bonding wire antenna communication module including a transceiver connected to the plurality of amplifiers. ์ œ5 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 5, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ์ผ์ •ํ•œ ๊ฐ„๊ฒฉ์œผ๋กœ ์ด๊ฒฉ๋˜์–ด ๋ฐฐ์น˜๋˜๊ณ , ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€์—์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋กœ ์ž…๋ ฅ๋˜๋Š” ๊ฐ๊ฐ์˜ ์‹ ํ˜ธ๋“ค์€ ์œ„์ƒ์˜ ์ฐจ์ด๋ฅผ ๊ฐ€์ง€๊ณ , ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ๋น”ํฌ๋ฐ(Beamforming)์— ์‚ฌ์šฉ๋˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.The plurality of bonding wire antennas are spaced apart at regular intervals, and each of the signals inputted from the transceiver to the plurality of amplifiers has a phase difference, and the plurality of bonding wire antennas are used for beamforming. Bonding wire antenna communication module. ์ œ5 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 5, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๋ฐ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ์—ฐ๊ฒฐํ•˜๋Š” ์Šค์œ„์น˜๋ฅผ ๋” ํฌํ•จํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ. Bonding wire antenna communication module further comprises a switch connecting the plurality of amplifiers and the transceiver. ์ œ7 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 7, wherein ์ƒ๊ธฐ ์Šค์œ„์น˜๋Š” ํŠธ๋žœ์ง€์Šคํ„ฐ๋ฅผ ํฌํ•จํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And the switch comprises a transistor. ์ œ8 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 8, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ–๋Š” ์‹ ํ˜ธ๋ฅผ ์ถœ๋ ฅํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And a plurality of bonding wire antennas outputting signals having the same phase. ์ œ9 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 9, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์—์„œ ์ถœ๋ ฅ๋˜๋Š” ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ. Bonding wire antenna communication module output signals outputted from the plurality of bonding wire antennas constitute a wide area signal. ์ œ 10ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 10, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๊ฐ๊ฐ์˜ ๋™์ž‘ ์—ฌ๋ถ€๋Š”, ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅํŒŒ์›Œ์— ๋”ฐ๋ผ์„œ ์กฐ์ ˆ๋˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.The operation of each of the plurality of amplifiers, the bonding wire antenna communication module is adjusted according to the output power of the wide area signal. ์ œ1 ํ•ญ์— ์žˆ์–ด์„œ,According to claim 1, ์ƒ๊ธฐ ๊ธฐํŒ ์ƒ์— ๋ฐฐ์น˜๋œ ์ ‘์† ํŒจ๋“œ๋“ค์„ ๋” ํฌํ•จํ•˜๋˜, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ์ƒ๊ธฐ ์ ‘์† ํŒจ๋“œ๋“ค๊ณผ ์—ฐ๊ฒฐ๋œ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.Bonding wire antennas disposed on the substrate, wherein the plurality of bonding wire antennas are connected to the connection pads. ์ œ1 ํ•ญ์— ์žˆ์–ด์„œ,According to claim 1, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” ์‹ค์งˆ์ ์œผ๋กœ ๋™์ผํ•œ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And a bonding wire antenna communication module having substantially the same length of the plurality of bonding wire antennas. ์ œ13 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 13, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” 0.8mm ~1mm ์ธ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.Bonding wire antenna communication module of the plurality of bonding wire antenna length of 0.8mm ~ 1mm. ์ œ1 ํ•ญ์— ์žˆ์–ด์„œ,According to claim 1, ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณธ๋”ฉ ์™€์ด์–ด๋ฅผ ๋” ํฌํ•จํ•˜๊ณ ,Further comprising a bonding wire electrically connected to the bonding pad, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด์™€ ๋™์ผํ•œ ๊ณต์ •์—์„œ ์ œ๊ณต๋˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ. The bonding wire antenna communication module is provided in the same process as the plurality of bonding wire antenna. ์ œ1 ํ•ญ์— ์žˆ์–ด์„œ,According to claim 1, ์ƒ๊ธฐ ๊ธฐํŒ ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด์นฉ ์‚ฌ์ด์— ๊ฐœ์žฌ๋œ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด์นฉ๋“ค์„ ๋” ํฌํ•จํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.Bonding wire antenna communication module further comprising additional semiconductor chips interposed between the substrate and the semiconductor chip. ๊ธฐํŒ ์ƒ์˜ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๋ฐ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ์™€ ์—ฐ๊ฒฐ๋œ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ํฌํ•จํ•˜๋Š” ๋ฐ˜๋„์ฒด ์นฉ;A semiconductor chip including a plurality of amplifiers on a substrate and a transceiver connected to the plurality of amplifiers; ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์˜ ์ œ1 ๋ณธ๋”ฉ ํŒจ๋“œ ๋ฐ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ์™€ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ; ๊ทธ๋ฆฌ๊ณ ,A plurality of second bonding pads connected to the first bonding pads on the semiconductor chip and the plurality of amplifiers; And, ์ƒ๊ธฐ ์ œ1 ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณธ๋”ฉ ์™€์ด์–ด ๋ฐ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ œ2 ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋˜๊ณ , ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•˜๋Š” ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ.And a bonding wire electrically connected to the first bonding pad and a plurality of bonding wire antennas electrically connected to the plurality of second bonding pads to transmit and receive signals. ๊ธฐํŒ ์ƒ์— ๋ฐฐ์น˜๋˜๊ณ , ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๋ฐ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ํฌํ•จํ•˜๋Š” ๋ฐ˜๋„์ฒด ์นฉ;A semiconductor chip disposed on the substrate, the semiconductor chip including a plurality of amplifiers and a transceiver; ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์˜ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ; ๊ทธ๋ฆฌ๊ณ ,A plurality of bonding pads on the semiconductor chip; And, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋˜๊ณ , ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์„ ๊ฐ๊ฐ ์ถœ๋ ฅํ•˜๋Š” ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜๋ฉฐ,A plurality of bonding wire antennas electrically connected to the plurality of bonding pads and outputting output signals, respectively; ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•˜๊ณ , ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๊ฐ๊ฐ์˜ ๋™์ž‘ ์—ฌ๋ถ€๋Š” ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅํŒŒ์›Œ์— ๋”ฐ๋ผ ์ œ์–ด๋˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ. The output signals constitute a wide area signal, and whether or not operation of each of the plurality of amplifiers is controlled according to the output power of the wide area signal. ๊ธฐํŒ ์ƒ์˜ ๋ฐ˜๋„์ฒด ์นฉ;A semiconductor chip on a substrate; ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์˜ ๋ณธ๋”ฉ ํŒจ๋“œ; ๊ทธ๋ฆฌ๊ณ ,Bonding pads on the semiconductor chip; And, ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋˜๊ณ , ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And a bonding wire antenna electrically connected to the bonding pad, the bonding wire antenna transmitting and receiving a signal. ์ œ19 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 19, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And the semiconductor chip comprises an amplifier electrically connected to the bonding pads. ์ œ20 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 20, ์ƒ๊ธฐ ์ฆํญ๊ธฐ๋Š” ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier) ๋ฐ ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Amplifier) ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜๋ฅผ ํฌํ•จํ•˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And the amplifier comprises at least one of a power amplifier and a low noise amplifier. ์ œ20 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 20, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ์ฆํญ๊ธฐ์™€ ์—ฐ๊ฒฐ๋œ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ํฌํ•จํ•˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.The semiconductor chip includes a monopole bonding wire antenna communication module including a transceiver connected to the amplifier. ์ œ22 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 22, ์ƒ๊ธฐ ์ฆํญ๊ธฐ ๋ฐ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ์—ฐ๊ฒฐํ•˜๋Š” ์Šค์œ„์น˜๋ฅผ ๋” ํฌํ•จํ•˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ. And a switch connecting the amplifier and the transceiver. ์ œ23 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 23, wherein ์ƒ๊ธฐ ์Šค์œ„์น˜๋Š” ํŠธ๋žœ์ง€์Šคํ„ฐ๋ฅผ ํฌํ•จํ•˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And said switch comprises a transistor. ์ œ19 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 19, ์ƒ๊ธฐ ๊ธฐํŒ ์ƒ์— ๋ฐฐ์น˜๋œ ์ ‘์† ํŒจ๋“œ๋ฅผ ๋” ํฌํ•จํ•˜๋˜, ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋“ค์€ ์ƒ๊ธฐ ์ ‘์† ํŒจ๋“œ๋“ค๊ณผ ์—ฐ๊ฒฐ๋œ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And a connection pad disposed on the substrate, wherein the bonding wire antennas are connected to the connection pads. ์ œ19 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 19, ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ์— ์‚ฌ์šฉ๋˜๋Š” ์ฃผํŒŒ์ˆ˜์— ๋”ฐ๋ผ ๋‹ฌ๋ผ์ง€๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.Bonding wire antenna communication module is the length of the bonding wire antenna varies depending on the frequency used in the bonding wire antenna communication module. ์ œ19 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 19, ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” 0.8mm ~1.5mm ์ธ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.The length of the bonding wire antenna is 0.8mm ~ 1.5mm monopole bonding wire antenna communication module. ์ œ19 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 19, ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณธ๋”ฉ ์™€์ด์–ด๋ฅผ ๋” ํฌํ•จํ•˜๊ณ ,Further comprising a bonding wire electrically connected to the bonding pad, ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด์™€ ๋™์ผํ•œ ๊ณต์ •์—์„œ ์ œ๊ณต๋˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ. And the bonding wire antenna is provided in the same process as the bonding wire. ์ œ19 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 19, ์ƒ๊ธฐ ๊ธฐํŒ ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด์นฉ ์‚ฌ์ด์— ๊ฐœ์žฌ๋œ ํ•˜๋‚˜ ์ด์ƒ์˜ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด์นฉ์„ ๋” ํฌํ•จํ•˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ. And at least one additional semiconductor chip interposed between the substrate and the semiconductor chip. ์ œ19 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 19, ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ ์‚ฌ์ด์— ๋ฐฐ์น˜๋œ ๋ฒ”ํ”„๋ฅผ ํฌํ•จํ•˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And a bump disposed between the semiconductor chip and the substrate. ์ œ19 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 19, ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๋ชจ์–‘์— ๋”ฐ๋ผ ์ƒ๊ธฐ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์—์„œ ์†ก์‹ ๋˜๋Š” ์‹ ํ˜ธ์˜ ๋ฐฉํ–ฅ์ด ์กฐ์ ˆ๋˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And a monopole bonding wire antenna communication module in which a direction of a signal transmitted from the bonding wire antenna is adjusted according to a shape of the bonding wire antenna. ์ƒ๊ธฐ ๊ธฐํŒ ์ƒ์˜ ๋ณต์ˆ˜์˜ ๋ฐ˜๋„์ฒด ์นฉ;A plurality of semiconductor chips on the substrate; ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์˜ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ; ๊ทธ๋ฆฌ๊ณ ,A plurality of bonding pads on the plurality of semiconductor chips; And, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋˜๊ณ , ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•˜๋Š” ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And a plurality of bonding wire antennas electrically connected to the plurality of bonding pads, the plurality of bonding wire antennas transmitting and receiving signals. ์ œ 31ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 31, wherein ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ํŒจ๋“œ์™€ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋˜, ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜์˜ ์ฆํญ๊ธฐ๋Š” CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.The plurality of semiconductor chips includes a plurality of amplifiers electrically connected to the plurality of bonding pads, wherein at least one amplifier is provided using a CMOS process. ์ œ 31ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 31, wherein ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ์™€ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ํฌํ•จํ•˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ๋ชจ๋“ˆ.And the plurality of semiconductor chips include a plurality of transceivers connected to the plurality of amplifiers. ์ œ 34ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 34, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์†ก์ˆ˜์‹ ๋ถ€์—์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋กœ ์ž…๋ ฅ๋˜๋Š” ๊ฐ๊ฐ์˜ ์‹ ํ˜ธ๋“ค์€ ์œ„์ƒ์˜ ์ฐจ์ด๋ฅผ ๊ฐ€์ง€๊ณ , ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ๋น”ํฌ๋ฐ(Beamforming)์— ์‚ฌ์šฉ๋˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.Each signal input to the plurality of amplifiers from the plurality of transceivers has a phase difference, and the plurality of bonding wire antennas are used for beamforming. ์ œ34 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 34, wherein ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜๋Š” ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ–๋Š” ์‹ ํ˜ธ๋ฅผ ์ถœ๋ ฅํ•˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And the plurality of bonding wire antennas output signals having the same phase. ์ œ36 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 36, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์—์„œ ์ถœ๋ ฅ๋˜๋Š” ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ. And output signals output from the plurality of bonding wire antennas constitute one wide area signal. ์ œ 37ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 37, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๊ฐ๊ฐ์˜ ๋™์ž‘ ์—ฌ๋ถ€๋Š”, ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅํŒŒ์›Œ์— ๋”ฐ๋ผ์„œ ์กฐ์ ˆ๋˜๋Š” ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.The operation of each of the plurality of amplifiers, the monopole bonding wire antenna communication module is adjusted according to the output power of the wide area signal. ์ œ32 ํ•ญ์— ์žˆ์–ด์„œ,33. The method of claim 32 wherein ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” ์‹ค์งˆ์ ์œผ๋กœ ๋™์ผํ•œ ๋ชจ๋…ธํด ๋ณธ๋”ฉ ์™€์ด์–ด ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋“ˆ.And a monopole bonding wire antenna communication module having substantially the same length of the plurality of bonding wire antennas. ๋ฐ˜๋„์ฒด ์นฉ; ๋ฐ Semiconductor chips; And ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์— ์„œ๋กœ ์ด๊ฒฉ๋˜์–ด ๋ฐฐ์น˜๋˜๊ณ , ์‹ ํ˜ธ๋ฅผ ์†ก์ˆ˜์‹ ํ•˜๋Š” ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ.And a plurality of antennas disposed on the semiconductor chip spaced apart from each other and transmitting and receiving signals. ์ œ40 ํ•ญ์— ์žˆ์–ด์„œ, 41. The method of claim 40 wherein ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜ ๊ฐ๊ฐ์˜ ์ผ๋‹จ ๋ฐ ํƒ€๋‹จ์€ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ๊ณผ ๊ฐ๊ฐ ์—ฐ๊ฒฐ๋˜๊ณ , One end and the other end of each of the plurality of antennas are respectively connected to the semiconductor chip, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜ ๊ฐ๊ฐ์˜ ์ƒ๊ธฐ ์ผ๋‹จ ๋ฐ ์ƒ๊ธฐ ํƒ€๋‹จ์„ ์ œ์™ธํ•œ ๋ถ€๋ถ„ ์ค‘ ์ ์–ด๋„ ์ผ๋ถ€๋Š” ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์œผ๋กœ๋ถ€ํ„ฐ ์ด๊ฒฉ๋œ ํ†ต์‹  ๋ชจ๋“ˆ. And at least some of the portions except the one end and the other end of each of the plurality of antennas are spaced apart from the semiconductor chip. ์ œ41 ํ•ญ์— ์žˆ์–ด์„œ,42. The method of claim 41 wherein ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜์˜ ์ƒ๊ธฐ ์ผ๋‹จ๋“ค๊ณผ ์ „๊ธฐ์ ์œผ๋กœ ๊ฐ๊ฐ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ. The semiconductor chip includes a plurality of amplifiers electrically connected to the ends of the plurality of antennas, respectively. ์ œ42 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 42, wherein ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋Š” ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier) ๋ฐ ์ €์žก์Œ ์ฆํญ๊ธฐ(Low Noise Amplifier) ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜๋ฅผ ํฌํ•จํ•˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ. The plurality of amplifiers include at least one of a power amplifier and a low noise amplifier. ์ œ43 ํ•ญ์— ์žˆ์–ด์„œ,44. The method of claim 43, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ์ค‘์—์„œ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜์˜ ์ฆํญ๊ธฐ๋Š” CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ. At least one of the plurality of amplifiers is provided using a CMOS process. ์ œ42 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 42, wherein ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ์™€ ์—ฐ๊ฒฐ๋œ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ํฌํ•จํ•˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ. The semiconductor chip includes a communication module connected to the plurality of amplifiers. ์ œ45 ํ•ญ์— ์žˆ์–ด์„œ,46. The method of claim 45, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜๋Š” ์ผ์ •ํ•œ ๊ฐ„๊ฒฉ์œผ๋กœ ์„œ๋กœ ์ด๊ฒฉ๋˜์–ด ๋ฐฐ์น˜๋˜๊ณ , The plurality of antennas are spaced apart from each other at regular intervals, ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€์—์„œ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋กœ ์ž…๋ ฅ๋˜๋Š” ๊ฐ๊ฐ์˜ ์‹ ํ˜ธ๋“ค์€ ์œ„์ƒ์˜ ์ฐจ์ด๋ฅผ ๊ฐ€์ง€๊ณ , Each signal input from the transceiver to the plurality of amplifiers has a phase difference, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜๋Š” ๋น”ํฌ๋ฐ(beamforming)์— ์‚ฌ์šฉ๋˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ. And the plurality of antennas are used for beamforming. ์ œ45 ํ•ญ์— ์žˆ์–ด์„œ,46. The method of claim 45, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๋ฐ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€๋ฅผ ์—ฐ๊ฒฐํ•˜๋Š” ์Šค์œ„์น˜ ์†Œ์ž๋ฅผ ๋” ํฌํ•จํ•˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ. The communication module further comprises a switch element for connecting the plurality of amplifiers and the transceiver. ์ œ40 ํ•ญ์— ์žˆ์–ด์„œ,41. The method of claim 40 wherein ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜๋Š” ๋™์ผํ•œ ์œ„์ƒ์„ ๊ฐ–๋Š” ์‹ ํ˜ธ๋ฅผ ์ถœ๋ ฅํ•˜๋Š” ์•ˆํ…Œ๋‚˜ ํ†ต์‹  ๋ชจ๋‘˜. The antenna communication module for outputting a signal having the same phase of the plurality of antennas. ์ œ48 ํ•ญ์— ์žˆ์–ด์„œ,49. The method of claim 48 wherein ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜์—์„œ ์ถœ๋ ฅ๋˜๋Š” ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ. The signals output from the plurality of antennas constitute a wide area signal. ์ œ 49ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 49, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ ๊ฐ๊ฐ์˜ ๋™์ž‘ ์—ฌ๋ถ€๋Š”, ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅํŒŒ์›Œ์— ๋”ฐ๋ผ์„œ ์กฐ์ ˆ๋˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ.The operation of each of the plurality of amplifiers, the communication module is adjusted according to the output power of the wide area signal. ์ œ40 ํ•ญ์— ์žˆ์–ด์„œ,41. The method of claim 40 wherein ์ƒ๊ธฐ ์•ˆํ…Œ๋‚˜์˜ ๊ธธ์ด๋Š” 0.8mm~1mm ์ธ ํ†ต์‹  ๋ชจ๋“ˆ. The length of the antenna is 0.8mm ~ 1mm communication module. ์ œ41 ํ•ญ์— ์žˆ์–ด์„œ,42. The method of claim 41 wherein ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์— ๋ฐฐ์น˜๋œ ๋ณธ๋”ฉ ํŒจ๋“œ;Bonding pads disposed on the semiconductor chip; ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์ด ๋ฐฐ์น˜๋˜๋Š” ๊ธฐํŒ;A substrate on which the semiconductor chip is disposed; ์ƒ๊ธฐ ๊ธฐํŒ ์ƒ์˜ ์ ‘์† ํŒจ๋“œ; ๊ทธ๋ฆฌ๊ณ ,A connection pad on the substrate; And, ์ƒ๊ธฐ ๋ณธ๋”ฉ ํŒจ๋“œ ๋ฐ ์ƒ๊ธฐ ์ ‘์† ํŒจ๋“œ๋ฅผ ์—ฐ๊ฒฐํ•˜๋Š” ๋ณธ๋”ฉ ์™€์ด์–ด๋ฅผ ๋” ํฌํ•จํ•˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ. And a bonding wire connecting the bonding pad and the connection pad. ์ œ41 ํ•ญ์— ์žˆ์–ด์„œ,42. The method of claim 41 wherein ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์ด ๋ฐฐ์น˜๋˜๋Š” ๊ธฐํŒ; A substrate on which the semiconductor chip is disposed; ์ƒ๊ธฐ ๊ธฐํŒ๊ณผ ์—ฐ๊ฒฐ๋˜๊ณ , ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ๋ฐ ์ƒ๊ธฐ ๊ธฐํŒ ์‚ฌ์ด์— ๋ฐฐ์น˜๋œ ์ ‘์† ํŒจ๋“œ; ๊ทธ๋ฆฌ๊ณ A connection pad connected to the substrate and disposed between the semiconductor chip and the substrate; And ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์„ ๊ด€ํ†ตํ•˜๊ณ , ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ๋ฐ ์ƒ๊ธฐ ์ ‘์† ํŒจ๋“œ๋ฅผ ์ „๊ธฐ์ ์œผ๋กœ ์—ฐ๊ฒฐํ•˜๋Š” ๋น„์•„ ์ฝ˜ํƒ ํ”Œ๋Ÿฌ๊ทธ๋ฅผ ๋” ํฌํ•จํ•˜๋Š” ์™€์ด์–ด ํ†ต์‹  ๋ชจ๋“ˆ. And a via contact plug penetrating the semiconductor chip and electrically connecting the semiconductor chip and the connection pad. ์ œ53 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 53, ์ƒ๊ธฐ ๊ธฐํŒ ๋ฐ ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์ด ๋ฐฐ์น˜๋œ ๋ณต์ˆ˜์˜ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ์„ ๋” ํฌํ•จํ•˜๋ฉฐ,Further comprising a plurality of additional semiconductor chips disposed on the substrate and the semiconductor chip, ์ƒ๊ธฐ ๋น„์•„ ์ฝ˜ํƒ ํ”Œ๋Ÿฌ๊ทธ๋Š” ์ƒ๊ธฐ ์ถ”๊ฐ€ ๋ฐ˜๋„์ฒด ์นฉ์„ ๋” ๊ด€ํ†ตํ•˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ. And the via contact plug further penetrates through the additional semiconductor chip. ์†ก์ˆ˜์‹ ๋ถ€ ๋ฐ ์ƒ๊ธฐ ์†ก์ˆ˜์‹ ๋ถ€์™€ ์—ฐ๊ฒฐ๋œ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋ฅผ ํฌํ•จํ•˜๋Š” ๋ฐ˜๋„์ฒด ์นฉ; ๊ทธ๋ฆฌ๊ณ  A semiconductor chip including a transceiver and a plurality of amplifiers connected to the transceiver; And ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ ์ƒ์— ๋ฐฐ์น˜๋˜๊ณ , ์‹ ํ˜ธ๋“ค์„ ๊ฐ๊ฐ ์ถœ๋ ฅํ•˜๋Š” ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜๋ฅผ ํฌํ•จํ•˜๋ฉฐ,A plurality of antennas disposed on the semiconductor chip and outputting signals, respectively; ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜์˜ ์ผ๋‹จ๋“ค์€ ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ์™€ ๊ฐ๊ฐ ์—ฐ๊ฒฐ๋˜๊ณ , One ends of the plurality of antennas are respectively connected to the plurality of amplifiers, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์•ˆํ…Œ๋‚˜ ๊ฐ๊ฐ์˜ ์ƒ๊ธฐ ์ผ๋‹จ์„ ์ œ์™ธํ•œ ๋ถ€๋ถ„ ์ค‘ ์ ์–ด๋„ ์ผ๋ถ€๋Š” ์ƒ๊ธฐ ๋ฐ˜๋„์ฒด ์นฉ์œผ๋กœ๋ถ€ํ„ฐ ์ด๊ฒฉ๋˜๊ณ , At least some of the portions except the one end of each of the plurality of antennas are spaced apart from the semiconductor chip, ์ƒ๊ธฐ ์ถœ๋ ฅ ์‹ ํ˜ธ๋“ค์€ ํ•˜๋‚˜์˜ ๊ด‘์—ญ ์‹ ํ˜ธ๋ฅผ ๊ตฌ์„ฑํ•˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ. And said output signals constitute one wide area signal. ์ œ55 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 55, ์ƒ๊ธฐ ๋ณต์ˆ˜์˜ ์ฆํญ๊ธฐ๋Š” ํŒŒ์›Œ ์ฆํญ๊ธฐ(Power Amplifier)๋“ค์ด๊ณ , The plurality of amplifiers are power amplifiers, ์ƒ๊ธฐ ํŒŒ์›Œ ์ฆํญ๊ธฐ๋“ค ์ค‘ ์ ์–ด๋„ ์–ด๋Š ํ•˜๋‚˜๋Š” CMOS ๊ณต์ •์„ ์ด์šฉํ•˜์—ฌ ์ œ๊ณต๋˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ. At least one of the power amplifiers is provided using a CMOS process. ์ œ55 ํ•ญ์— ์žˆ์–ด์„œ,The method of claim 55, ์ƒ๊ธฐ ํŒŒ์›Œ ์ฆํญ๊ธฐ๋“ค ๊ฐ๊ฐ์˜ ๋™์ž‘ ์—ฌ๋ถ€๋Š” ์ƒ๊ธฐ ๊ด‘์—ญ ์‹ ํ˜ธ์˜ ์ถœ๋ ฅ ํŒŒ์›Œ์— ๋”ฐ๋ผ ์ œ์–ด๋˜๋Š” ํ†ต์‹  ๋ชจ๋“ˆ.The operation of each of the power amplifiers is a communication module controlled according to the output power of the wide area signal.
PCT/KR2010/005668 2009-08-26 2010-08-24 Bonding wire antenna communication module Ceased WO2011025241A2 (en)

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KR1020090079220A KR20110021427A (en) 2009-08-26 2009-08-26 Monopole Bonding Wire Antenna Communication Module
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KR1020090079208A KR101133146B1 (en) 2009-08-26 2009-08-26 Bonding Wire Antenna Communication Module
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CN108963420A (en) * 2018-04-23 2018-12-07 ๆ˜“ๅŠ›ๅฃฐ็ง‘ๆŠ€(ๆทฑๅœณ)ๆœ‰้™ๅ…ฌๅธ A kind of high resiliency antenna being made by closing line
US10566679B2 (en) 2017-01-05 2020-02-18 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Ribbon bond antennas
CN112420526A (en) * 2019-08-20 2021-02-26 ๆฑŸ่‹้•ฟ็”ต็ง‘ๆŠ€่‚กไปฝๆœ‰้™ๅ…ฌๅธ Double-substrate laminated structure and packaging method thereof
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US10566679B2 (en) 2017-01-05 2020-02-18 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Ribbon bond antennas
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US11967569B2 (en) 2019-10-03 2024-04-23 Texas Instruments Incorporated Ex-situ manufacture of metal micro-wires and FIB placement in IC circuits
CN115295509A (en) * 2022-08-17 2022-11-04 ็”ฌ็Ÿฝ็”ตๅญ(ๅฎๆณข)่‚กไปฝๆœ‰้™ๅ…ฌๅธ IC radio frequency packaging structure and preparation method thereof

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