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WO2011014020A3 - Photoresist composition for forming a self-aligned double pattern - Google Patents

Photoresist composition for forming a self-aligned double pattern Download PDF

Info

Publication number
WO2011014020A3
WO2011014020A3 PCT/KR2010/004987 KR2010004987W WO2011014020A3 WO 2011014020 A3 WO2011014020 A3 WO 2011014020A3 KR 2010004987 W KR2010004987 W KR 2010004987W WO 2011014020 A3 WO2011014020 A3 WO 2011014020A3
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist composition
self
forming
aligned double
double pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/004987
Other languages
French (fr)
Korean (ko)
Other versions
WO2011014020A2 (en
Inventor
이정열
김한상
이재우
김재현
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
Original Assignee
Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of WO2011014020A2 publication Critical patent/WO2011014020A2/en
Publication of WO2011014020A3 publication Critical patent/WO2011014020A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H10P76/00—
    • H10P76/20—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

Disclosed is a photoresist composition for forming a self-aligned double pattern, which can bring about a thickness reduction in patterns and photoresist films in unexposed areas. The photoresist composition comprises: from 0.5 to 15 wt.% of a polymer represented by Chemical formula 1 of Claim 1; and a balance of solvent, and a reduction in the thickness of the pattern and the photoresist film in unexposed areas is brought about by means of a developing solution during development processing carried out in order to remove a boundary layer.
PCT/KR2010/004987 2009-07-30 2010-07-29 Photoresist composition for forming a self-aligned double pattern Ceased WO2011014020A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0070079 2009-07-30
KR20090070079 2009-07-30

Publications (2)

Publication Number Publication Date
WO2011014020A2 WO2011014020A2 (en) 2011-02-03
WO2011014020A3 true WO2011014020A3 (en) 2011-06-16

Family

ID=43529880

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004987 Ceased WO2011014020A2 (en) 2009-07-30 2010-07-29 Photoresist composition for forming a self-aligned double pattern

Country Status (2)

Country Link
KR (1) KR101738480B1 (en)
WO (1) WO2011014020A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101863635B1 (en) * 2011-06-10 2018-06-04 주식회사 동진쎄미켐 Cleaning composition for photolithography and method for forming photoresist fine pattern using the same
KR101882561B1 (en) * 2015-10-02 2018-07-26 삼성에스디아이 주식회사 Cmp slurry composition for organic film and polishing method using the same
CN109427686B (en) 2017-08-29 2021-04-13 联华电子股份有限公司 Isolation structure and method of forming the same
US12278106B2 (en) 2020-11-06 2025-04-15 Changxin Memory Technologies, Inc. Preparation method of semiconductor device
CN114446769B (en) * 2020-11-06 2024-09-13 长鑫存储技术有限公司 Method for preparing semiconductor device
CN115565979A (en) 2021-07-02 2023-01-03 长鑫存储技术有限公司 Semiconductor transistor structure and manufacturing method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07199467A (en) * 1993-12-28 1995-08-04 Nec Corp Photosensitive resin composition and pattern forming method
JPH10319595A (en) * 1997-05-20 1998-12-04 Fujitsu Ltd Resist composition and method for forming resist pattern
US20080145783A1 (en) * 2006-12-19 2008-06-19 Cheil Industries Inc. Photosensitive Resin Composition and Organic Insulating Film Produced Using the Same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4877388B2 (en) * 2007-03-28 2012-02-15 Ｊｓｒ株式会社 Positive radiation-sensitive composition and resist pattern forming method using the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07199467A (en) * 1993-12-28 1995-08-04 Nec Corp Photosensitive resin composition and pattern forming method
JPH10319595A (en) * 1997-05-20 1998-12-04 Fujitsu Ltd Resist composition and method for forming resist pattern
US20080145783A1 (en) * 2006-12-19 2008-06-19 Cheil Industries Inc. Photosensitive Resin Composition and Organic Insulating Film Produced Using the Same

Also Published As

Publication number Publication date
KR101738480B1 (en) 2017-05-23
KR20110013291A (en) 2011-02-09
WO2011014020A2 (en) 2011-02-03

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