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WO2011014020A2 - Composition de photorésine pour former un motif double auto-aligné - Google Patents

Composition de photorésine pour former un motif double auto-aligné Download PDF

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Publication number
WO2011014020A2
WO2011014020A2 PCT/KR2010/004987 KR2010004987W WO2011014020A2 WO 2011014020 A2 WO2011014020 A2 WO 2011014020A2 KR 2010004987 W KR2010004987 W KR 2010004987W WO 2011014020 A2 WO2011014020 A2 WO 2011014020A2
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WO
WIPO (PCT)
Prior art keywords
formula
photoresist
mole
group
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/004987
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English (en)
Korean (ko)
Other versions
WO2011014020A3 (fr
Inventor
이정열
김한상
이재우
김재현
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dongjin Semichem Co Ltd
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Dongjin Semichem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd filed Critical Dongjin Semichem Co Ltd
Publication of WO2011014020A2 publication Critical patent/WO2011014020A2/fr
Publication of WO2011014020A3 publication Critical patent/WO2011014020A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H10P76/00—
    • H10P76/20—

Definitions

  • the present invention relates to a photoresist composition, and more particularly, in a self-aligned double patterning process, in a boundary layer removal process for forming a second photoresist pattern, a photoresist film of a non-exposed portion by a developer for removing a boundary layer and A photoresist composition for forming a self-aligning double pattern that can cause a thickness reduction in a pattern.
  • a photolithography process capable of forming an ultrafine photoresist pattern having a line width of 80 nm or less is required.
  • a photoresist composition containing a photosensitive polymer and a solvent is coated on a substrate such as a silicon wafer used for fabricating an integrated circuit, and heated to bake the solvent to evaporate the thin film.
  • a photoresist film in the form of a film is formed.
  • the chemical properties of the photosensitive polymer change in the exposed region.
  • the exposed photoresist film is treated with a developer solution to selectively dissolve and remove portions of the exposed or unexposed photoresist film to form a photoresist pattern.
  • the self-aligned double patterning technique forms boundary layers CAP and 22 on the first photoresist pattern 20 on the substrate 10 (A in FIG. 1), and thereon.
  • the second photoresist pattern 32 is formed by removing the boundary layer 22 (C in FIG. 1) to thereby resolve the resolution of the photoresist pattern. is to increase the resolution.
  • TMAH tetramethyl ammonium hydroxide
  • Another object of the present invention is to provide a photoresist composition for forming a self-aligning double pattern, in which no alignment issue occurs when forming the second photoresist pattern.
  • the present invention 0.5 to 15% by weight of the polymer represented by the formula (1); And a remaining solvent, wherein the thickness of the photoresist film and the pattern of the non-exposed part is reduced during the development process, thereby providing a photoresist composition for forming a self-aligning double pattern.
  • R 1 is each independently hydrogen or a methyl group
  • R 2 is hydrogen or a linear or branched alkyl group of 1 to 5 carbon atoms
  • R 3 is a linear containing a lactone group or lactone group of 4 to 10 carbon atoms Is a branched, monocyclic or polycyclic alkyl group
  • R 4 is a linear, branched, monocyclic or polycyclic alkyl group having 8 to 15 carbon atoms substituted with a hydroxy group and a fluorine group
  • X is an oxygen or ester group
  • a, b , c and d are mole% of each repeating unit with respect to the total monomer (repeating unit) constituting the polymer
  • a, b, c and d is 20 to 60 mol%, 10 to 60 mol%, 20 to 60 mol, respectively % And 0-30 mol%.
  • the photoresist composition for forming a self-aligned double pattern according to the present invention is a photoresist film (that is, in a non-exposed state) of a non-exposed portion by a developing solution such as an aqueous tetramethyl ammonium hydroxide (TMAH) solution; This can cause thickness reduction in the pattern. Therefore, in the photoresist pattern forming method using self-aligned double patterning technology (SaDPT), the second photoresist film formed on the boundary layer CAP can be easily removed.
  • TMAH aqueous tetramethyl ammonium hydroxide
  • the self-aligned double patterning technique using a conventional photoresist composition
  • a separate exposure process for removing the second photoresist film formed on the boundary layer CAP is required, but this is omitted in the present invention.
  • the process shortening effect can be obtained.
  • an alignment problem may occur in which the second photoresist pattern is not accurately positioned between the first photoresist patterns.
  • the resist composition forms a photoresist film that is dissolved in the developer even without an exposure process, and forms a second photoresist pattern between the first photoresist patterns only by the development (boundary layer removal) process, thereby causing the alignment issue. It is useful for self-aligned double patterning techniques, since no secondary alignment and mask alignment of the exposure machine are required.
  • 1 is a view for explaining the process of forming a photoresist pattern by a self-aligned double patterning technique.
  • Example 3-1 is a SEM photograph of a photoresist pattern according to Example 3-1 of the present invention.
  • the photoresist composition for forming a self-aligned double pattern according to the present invention is a method for forming a second photoresist film and a pattern in a self-aligned double pattern forming process (self-aligned double patterning technology (SADPT)).
  • it includes a polymer and a solvent represented by the following formula (1).
  • R 1 is each independently hydrogen or a methyl group
  • R 2 is hydrogen or a linear or branched alkyl group having 1 to 5, preferably 1 to 3 carbon atoms.
  • R 3 is a linear, branched, monocyclic or polycyclic alkyl group comprising a lactone group or a lactone group having 4 to 10, preferably 4 to 8 carbon atoms, for example, a single lactone structure, or a lactone group is added to an alkyl group It may have a structure in which an alkyl group is added to the lactone group.
  • R 4 is a linear, branched, monocyclic or polycyclic alkyl group having 8 to 15 carbon atoms, preferably 8 to 13, substituted with a hydroxy group and a fluorine group, X is an oxygen or ester group, and a, b, c and d are As mole% of each repeating unit with respect to the total monomer (repeating unit) which comprises the said polymer, a, b, c, and d are 20-60 mol%, 10-60 mol%, 20-60 mol%, and 0-30, respectively. Mol%, preferably 30-50 mol%, 20-40 mol%, 30-40 mol% and 0-10 mol%, respectively.
  • the thickness reduction of the second photoresist film is insufficient during development (removal of the second photoresist film and the boundary layer above the boundary layer) after the formation of the second photoresist film. It may not develop, and when too large, there exists a possibility that the thickness reduction of a 2nd photoresist film may be excessive and a pattern may not be formed.
  • the mole% of the repeating unit d is too large, there is a fear that the stability of the resist is impaired.
  • the d mol% repeating unit is used, the minimum amount thereof is, for example, 0.5 mol%, preferably 1 mol%.
  • Polymer (photosensitive polymer) represented by the formula (1) used in the present invention is a repeating unit containing a fluoroalcohol group, etc. (c mol% repeating unit) or a repeating unit containing a fluoroalcohol group, etc. (cmol A repeating unit (d mole% repeating unit) containing a% repeating unit) and an acrylic acid group, etc., in the polymer chain, and controlling the mole% of each repeating unit in the polymer to control the photoresist film and the photo.
  • TMAH tetramethyl ammonium hydroxide
  • NaOH sodium hydroxide
  • KOH potassium hydroxide
  • the content of the polymer is 0.5 to 15% by weight, preferably 1 to 10% by weight, more preferably 3 to 7% by weight, and the content of the polymer is less than 0.5% by weight.
  • the weight average molecular weight (Mw) of the polymer is 5,000 to 100,000, preferably 5,000 to 20,000. If the weight average molecular weight of the polymer is out of the above range, the solubility with the solvent may be lowered or the secondary resist may not be completely filled in the space portion of the pattern.
  • Representative examples of the polymer represented by Chemical Formula 1 may include the following Chemical Formulas 2 to 10.
  • the solvent used in the present invention is for dissolving the polymer
  • the organic solvent used in the conventional photoresist composition can be used without limitation, for example, ethylene glycol monoethyl ether, ethylene glycol monomethyl ether, ethylene glycol Monoacetate, diethylene glycol, diethylene glycol monoethyl ether, propylene glycol monomethyl ether acetate, propylene glycol, propylene glycol monoacetate, toluene, xylene, methyl ethyl ketone, methyl isoamyl ketone, cyclohexanone, dioxane , Methyl lactate, ethyl lactate, methyl pyruvate, ethyl pyruvate, methyl methoxy propionate, ethyl ethoxy propionate, N, N-dimethylformamide, N, N-dimethylacetamide, N-methyl 2-pyrrolidone, 3-ethoxyethy
  • the photoresist composition according to the present invention may further include a photoacid generator, a basic acid diffusion regulator (basic compound, Quencher), etc., if necessary.
  • the photoacid generator (PAG) used in the present invention is exposed after exposure to remove the photoresist on the boundary layer more easily in the case where the additional step of partially removing the photoresist pattern in the space direction is performed after the boundary layer removal process.
  • a compound capable of generating an acid by light can be used without limitation, and for example, a sulfonium salt or iodonium salt compound, a mixture thereof, and the like can be used.
  • triphenylsulfonium triflate phthalimidotrifluoro methanesulfonate, dinitrobenzyltosylate, n-decyl disulfone, naphthylimidotrifluoro Naphthylimidotrifluoro methanesulfonate, diphenylurido salt triflate, diphenylurido salt nonaplate, diphenylurido salt hexafluorophosphate, diphenylurido salt hexafluoroarsenate, diphenylurodoxyl hexafluoroantimonate, diphenylurodomonate Phenylparamethoxyphenylsulfonium triflate, diphenylparatoluenylsulfonium triflate, diphenylparateruylbutylphenylsulfonium triflate, diphenylparaisobutylphen
  • the content of the photoacid generator is 0.5 to 15 parts by weight, preferably 1 to 8 parts by weight, based on 100 parts by weight of the polymer represented by Chemical Formula 1.
  • the content of the photoacid generator is less than 0.5 parts by weight with respect to 100 parts by weight of the polymer represented by Formula 1, the reactivity with respect to the exposure source is low to sufficiently remove the portion (part remaining in the space portion of the pattern) to be removed. There is a possibility that the removal may not be possible, and if it exceeds 15 parts by weight, the adjustment of the sensitivity to the exposure source may not be easy.
  • the basic acid diffusion regulator used in the present invention is used to control acid diffusion, and basic acid diffusion regulators used in conventional photoresist compositions can be used without limitation, for example, triethylamine, tri One or more selected from octylamine, triisobutylamine, triisooctylamine, diethanolamine, triethanolamine, 2-piperidine ethanol and the like can be used.
  • the content thereof is 0.5 to 10 parts by weight, preferably 1 to 5 parts by weight, based on 100 parts by weight of the polymer represented by Chemical Formula 1.
  • the content of the basic acid diffusion regulator is less than 0.5 parts by weight, it is difficult to control acid diffusion by the exposure source, and when it exceeds 10 parts by weight, excessive diffusion is suppressed and unnecessary parts (parts remaining in the space portion of the pattern) Not effective for removal).
  • the self-aligned double patterning technology (SADPT) is performed on a substrate 10, such as a semiconductor substrate, on which an etched layer is formed, as shown in FIG.
  • a substrate 10 such as a semiconductor substrate, on which an etched layer is formed, as shown in FIG.
  • the photoresist composition for forming a self-aligned double pattern according to the present invention is applied to the first photoresist pattern 20 having the boundary layer 22 formed thereon, for example, at 80 to 150 ° C, preferably 95 to 125 ° C. Bake for 40 to 120 seconds, preferably 50 to 60 seconds to form a second photoresist film 30 (B in FIG.
  • the first photoresist by developing and removing the second photoresist film 30 of And a cast pattern 20, a second photoresist step (C in Fig. 1) to form the pattern 32 in between.
  • the first photoresist pattern 20 may be formed through a conventional photoresist composition and a photolithography process without particular limitation.
  • a first photoresist composition made of a conventional photoresist composition is applied on the semiconductor substrate 10 on which an etched layer is formed to form a first photoresist film, and a soft bake (eg, a temperature of 95 to 125 ° C.). Baking for 50 to 90 seconds, exposing the first photoresist film with an exposure energy (Eop) capable of realizing an optimal pattern using an exposure mask having a line and space pattern, and subjecting the resultant to 80 to 90 seconds.
  • the first photoresist pattern 20 may be formed by a method including post-baking (exposure bake, PEB) for 30 to 180 seconds at a temperature of 150 ° C., and developing the resultant.
  • PEB exposure bake
  • the boundary layer CAP 22 is a coating layer for protecting the first photoresist pattern 20 and forming a space portion after the DPT process between the first photoresist pattern 20 and the second photoresist pattern 32. It can be formed using a conventional boundary layer (CAP) forming material, 0.5 to water-soluble polymer, such as a conventional water-soluble polymer, for example, polyvinylpyrrolidone, polyacrylamide, polyimidazole containing a nitrogen group 10% by weight, water soluble anionic surfactant, cationic surfactant or amphoteric surfactant, for example alkylbenzenesulfonate surfactant, higher amine halide, quaternary ammonium salt surfactant, alkylpyridinium salt surfactant, amino acid
  • the boundary layer forming material which contains 0.01-3.0 weight% of coating film forming agents, such as surfactant type
  • the boundary layer may be formed in various thicknesses according to the resolution of the pattern, and may be generally formed in a thickness of 30 to 300 nm.
  • An example of the boundary layer (CAP) forming material and the self-aligned double patterning (SaDPT) process are disclosed in the PCT International Application No. PCT / KR2010 / 001226, etc. of the applicant, and all the contents of the PCT International Application are incorporated herein by reference. Included.
  • photoresist compositions prepared in Examples 1-1 to 1-9 and hexamethyldisilazane in a thickness of 200 nm were used as a general ArF photoresist composition (product name: DHA-3606, manufacturer: Dongjin Semichem Co., Ltd.).
  • Photoresist films (Examples 2-1 to 2-9 and Comparative Examples) were prepared by spin coating the etched layer on the silicon wafer treated with (HMDS).
  • the prepared photoresist film was subjected to soft heat treatment for 90 seconds in an oven or a hot plate at 120 ° C., and then developed by immersing in a 2.38 wt% tetramethylammonium hydroxide (TMAH) aqueous solution for 60 seconds to develop a thickness change of the photoresist film.
  • TMAH tetramethylammonium hydroxide
  • Photoresist composition DHA-3606 (manufactured by Dongjin Semichem) was applied onto the wafer and soft baked at 110 ° C. for 60 seconds. After soft baking, it exposed using the exposure mask which has a line and space (L / S) pattern, using the 193 nm ArF exposure equipment (ASML 1200B), and post-baked at 110 degreeC for 60 second. After post-baking, the solution was developed with a 2.38 wt% tetramethylammonium hydroxide (TMAH) aqueous solution to obtain a first photoresist pattern having a 50 nm L / S and 1: 3 pitch.
  • TMAH tetramethylammonium hydroxide
  • a boundary layer forming material comprising 4.0 g of polyvinylpyrrolidone (PVP) as a water-soluble polymer, 95.0 g of deionized water, and 1.0 g of sulfonimide as a coating film forming agent (surfactant) is applied onto the first photoresist pattern, After baking at 150 ° C. for 60 seconds, it was developed using deionized water to form a boundary layer having a thickness of 6 nm on the first photoresist pattern.
  • PVP polyvinylpyrrolidone
  • surfactant sulfonimide
  • the photoresist compositions of Examples 1-1 to 1-9 were applied to the resultant, respectively, and baked at 110 ° C. for 60 seconds, and then developed with a 2.38 wt% tetramethylammonium hydroxide (TMAH) solution without performing exposure. (The upper layer photoresist film and the boundary layer were removed) to obtain second photoresist patterns (Examples 3-1 to 3-9) with 60 nm L / S and 1: 3 pitch.
  • SEM scanning electron microscope
  • the photoresist films (Examples 2-1 to 2-9) prepared by using the photoresist compositions (Examples 1-1 to 1-9) according to the present invention use a general ArF photoresist composition. Unlike the photoresist film (Comparative Example) prepared by the comparative example, it can be seen that it shows partial solubility in TMAH developer.
  • the upper boundary layer (CAP) may be formed (Examples 3-1 to 3-9) by removing the second photoresist film and the boundary layer formed on the second photoresist pattern, and the second photoresist pattern is located at the center between the first photoresist patterns. It can solve the alignment problem that cannot be solved, which is useful for DPT process such as self-aligned double patterning technique.
  • the photoresist composition for forming a self-aligned double pattern according to the present invention is a photo used in a self-aligned double patterning technology (SADPT) for forming an ultra-fine photoresist pattern having a line width of 80 nm or less. It is useful as a resist composition.
  • SADPT self-aligned double patterning technology

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

L'invention concerne une composition de photorésine pour former un motif double auto-aligné qui permet d'obtenir une réduction d'épaisseur des motifs et des films de photorésine dans des zones non exposées. La composition de photorésine selon l'invention contient 0,5 à 15 % en poids d'un polymère de formule 1 de la revendication 1, un équilibre de solvants et une réduction de l'épaisseur du motif et du film de photorésine dans des zones non exposées étant obtenus à l'aide d'une solution de développement pendant le processus de développement qui est effectué dans le but de supprimer une couche limite.
PCT/KR2010/004987 2009-07-30 2010-07-29 Composition de photorésine pour former un motif double auto-aligné Ceased WO2011014020A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2009-0070079 2009-07-30
KR20090070079 2009-07-30

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WO2011014020A2 true WO2011014020A2 (fr) 2011-02-03
WO2011014020A3 WO2011014020A3 (fr) 2011-06-16

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109427686A (zh) * 2017-08-29 2019-03-05 联华电子股份有限公司 隔离结构及其形成方法
WO2022095419A1 (fr) * 2020-11-06 2022-05-12 长鑫存储技术有限公司 Procédé de préparation de dispositif à semi-conducteurs
US12166070B2 (en) 2021-07-02 2024-12-10 Changxin Memory Technologies, Inc. Semiconductor transistor structure and manufacturing method
US12278106B2 (en) 2020-11-06 2025-04-15 Changxin Memory Technologies, Inc. Preparation method of semiconductor device

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KR101863635B1 (ko) * 2011-06-10 2018-06-04 주식회사 동진쎄미켐 포토리소그래피용 세정액 조성물 및 이를 이용한 포토레지스트 미세패턴 형성방법
KR101882561B1 (ko) * 2015-10-02 2018-07-26 삼성에스디아이 주식회사 유기막 연마용 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마방법

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JP2715881B2 (ja) * 1993-12-28 1998-02-18 日本電気株式会社 感光性樹脂組成物およびパターン形成方法
JP3819531B2 (ja) * 1997-05-20 2006-09-13 富士通株式会社 レジスト組成物及びレジストパターン形成方法
TW200836002A (en) * 2006-12-19 2008-09-01 Cheil Ind Inc Photosensitive resin composition and organic insulating film produced using the same
JP4877388B2 (ja) * 2007-03-28 2012-02-15 Ｊｓｒ株式会社 ポジ型感放射線性組成物およびそれを用いたレジストパターン形成方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109427686A (zh) * 2017-08-29 2019-03-05 联华电子股份有限公司 隔离结构及其形成方法
CN109427686B (zh) * 2017-08-29 2021-04-13 联华电子股份有限公司 隔离结构及其形成方法
US11121136B2 (en) 2017-08-29 2021-09-14 United Microelectronics Corp. Insulating structure and method of forming the same
WO2022095419A1 (fr) * 2020-11-06 2022-05-12 长鑫存储技术有限公司 Procédé de préparation de dispositif à semi-conducteurs
US12278106B2 (en) 2020-11-06 2025-04-15 Changxin Memory Technologies, Inc. Preparation method of semiconductor device
US12166070B2 (en) 2021-07-02 2024-12-10 Changxin Memory Technologies, Inc. Semiconductor transistor structure and manufacturing method

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KR101738480B1 (ko) 2017-05-23
KR20110013291A (ko) 2011-02-09
WO2011014020A3 (fr) 2011-06-16

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