WO2011099473A1 - Dicing/die-bonding tape and method for manufacturing semiconductor chip provided with adhesive layer - Google Patents

Abstract

Disclosed is a dicing/die-bonding tape, whereby an adhesive layer (3) can be accurately diced, and performance of picking up a semiconductor chip provided with an adhesive layer can be improved. The dicing/die-bonding tape (1) is provided with the adhesive layer, and a base material layer (4) which is laminated on one surface (3a) of the adhesive layer. At the time of performing dicing, a dicing ring (26) is adhered on the outer circumferential portion of the base material layer. The base material layer has an adhesion start point (4C) on the outer circumferential portion. When the width of the base material layer portion adhered to the dicing ring, excluding the portion with the adhesion start point, is W (mm), and the outer diameter of the base material layer portion, excluding the portion with the adhesion start point, is D (mm), the length L (mm) on the adhesion start point, which is on a position at a distance of 0.3W (mm) to the inside from the outer circumferential leading end on the adhesion start point side of the base material layer, is within the range of 0.30D-0.44D (mm).

Description

Dicing-die bonding tape and method for manufacturing semiconductor chip with adhesive layer

The present invention is used for obtaining a semiconductor chip with an adhesive layer, and a dicing die bonding tape used for die bonding the semiconductor chip with an adhesive layer, and the dicing die bonding tape. It is related with the manufacturing method of the used semiconductor chip with an adhesive layer.

When a semiconductor chip is cut out from a semiconductor wafer, a dicing method called a pre-dicing method is used. An example of the prior dicing method is disclosed in Patent Document 1 below, for example.

In the tip dicing method, first, a cut is formed on the surface of a semiconductor wafer. Next, a protective sheet is affixed on the surface of the semiconductor wafer on which the cuts are formed. Thereafter, the back surface of the semiconductor wafer is ground to the notched portion to reduce the thickness of the semiconductor wafer and divide it into individual semiconductor chips. A protective sheet is attached to the surface of the divided semiconductor wafer divided into individual semiconductor chips.

Also, in order to easily mount individual semiconductor chips obtained by the above-described dicing method on a substrate, a die bonding layer is often attached to the back surface of the semiconductor chip. In order to obtain this semiconductor chip with a die bonding layer, a dicing die bonding tape including a die bonding layer and a dicing layer is used.

As an example of a dicing-die bonding tape, in Patent Document 2 below, a die bonding layer is laminated on a release sheet, and a dicing layer is formed on the release sheet and the die bonding layer so as to cover the die bonding layer. A dicing-die bonding tape in which is laminated is disclosed. The die bonding layer is a layer taken out together with the semiconductor chip after dicing and used for die bonding of the semiconductor chip. In order to easily peel the dicing layer from the release sheet, a protrusion is provided on the outer peripheral edge of the dicing layer.

JP 2006-245467 A JP 2005-116790 A

When a semiconductor chip with a die bonding layer is obtained using the dicing-die bonding tape described in Patent Document 1, the die bonding layer and the dicing layer are peeled off from the release sheet using the protruding portion of the dicing layer as a peeling starting point. The die bonding layer and the outer peripheral portion of the dicing layer are exposed. Next, the exposed die bonding layer is attached to the semiconductor wafer after being divided, and the outer peripheral portion of the exposed dicing layer is attached to the dicing ring. Next, the protective sheet affixed on the surface of the divided semiconductor wafer is peeled off. Thereafter, the die bonding layer is diced along the cut portion of the divided semiconductor wafer. After dicing, the semiconductor chip with the die bonding layer is peeled off from the dicing layer and taken out. The taken-out semiconductor chip with a die bonding layer is mounted on the substrate from the die bonding layer side.

In the dicing-die bonding tape described in Patent Document 1, the tape may be attached to the dicing ring in a locally deformed state.

In that case, after the dicing layer is attached to the dicing ring, the dicing layer usually has a contracting force that relaxes the tensile stress at the time of attaching, and the contracting force of the dicing layer may be partially different. For this reason, a dicing line that is a cut portion of the divided semiconductor wafer may be curved (a phenomenon called kerf shift). In particular, when the protective sheet is heated and peeled off, the tensile stress at the time of attaching the dicing layer is easily relaxed by heating, and the dicing line is easily bent. Therefore, the die bonding layer may not be diced with high accuracy, or the space between the chips may not spread evenly, and the pick-up property of the semiconductor chip with the die-boarding layer may be low.

It is an object of the present invention to suppress partial deformation when attaching to a dicing ring when obtaining a semiconductor chip with an adhesive layer, to increase the accuracy of dicing, and to achieve uniform chip spacing. The present invention provides a dicing-die bonding tape that can enhance the pick-up property of a semiconductor chip with an adhesive layer by spreading to the surface, and a semiconductor chip manufacturing method using the dicing-die-boarding tape.

According to a wide aspect of the present invention, the adhesive layer and a base material layer laminated on one surface of the adhesive layer are provided, and dicing is performed on the outer peripheral portion of the base material layer at the time of dicing. A ring is affixed, and the base material layer has a sticking start point to be attached to the dicing ring at the start of sticking on the outer peripheral portion, and is attached to the dicing ring of the base material layer in a portion excluding the sticking start point. When the width of the part is W (mm) and the outer diameter of the base material layer in the part excluding the sticking start point is D (mm), the base layer is directed inward from the outer peripheral tip on the sticking start point side. A dicing-die bonding tape is provided in which the length L (mm) of the sticking origin at a distance of 0.3 W (mm) is in the range of 0.30D to 0.44D (mm).

In a specific aspect of the dicing die-bonding tape according to the present invention, the curvature of the outer peripheral tip of the base material layer on the sticking start point side is more than the curvature of the outer peripheral end of the base layer excluding the sticking start point. large.

In another specific aspect of the dicing-die bonding tape according to the present invention, the base material layer has a convex portion at an outer peripheral end on the sticking starting point side, and an outer peripheral tip on the sticking starting point side of the base material layer is , The top of the convex part.

In still another specific aspect of the dicing die-bonding tape according to the present invention, the base material layer has a plurality of convex portions at an outer peripheral end on the sticking origin side, and the plurality of convex portions are connected in a curved line. Yes.

The method of manufacturing a semiconductor chip with an adhesive layer according to the present invention includes a dicing die bonding tape constructed according to the present invention, a protective sheet, laminated on one surface of the protective sheet, and individual semiconductors. Bonding the adhesive layer of the dicing die-bonding tape to the post-split semiconductor wafer of the laminate using a laminate having the post-split semiconductor wafer divided into chips; and A step of pasting the pasting starting point of the base material layer on an annular dicing ring, and then pasting an outer peripheral portion of the base material layer excluding the pasting starting point to the dicing ring; A step of peeling from the wafer, a step of dicing the adhesive layer along the cut portion of the semiconductor wafer after the division, After, the adhesive layer in which the semiconductor chip is adhered is peeled from the base layer, and a step of taking out each said adhesive layer of the semiconductor chip. The step of attaching the adhesive layer of the dicing die-bonding tape to the divided semiconductor wafer of the laminate, and attaching the starting point of the base material layer to an annular dicing ring Then, the step of attaching the outer peripheral portion of the base material layer excluding the attachment starting point to the dicing ring may be performed simultaneously.

In a specific aspect of the method for manufacturing a semiconductor chip with an adhesive layer according to the present invention, a step of forming a cut for dividing the semiconductor wafer into individual semiconductor chips on the surface of the semiconductor wafer, A step of attaching a protective sheet to the surface of the formed semiconductor wafer, and grinding the back surface of the semiconductor wafer to which the protective sheet is attached, dividing the semiconductor wafer into individual semiconductor chips, The obtaining step is further provided.

Another method for manufacturing a semiconductor chip with an adhesive layer according to the present invention includes the dicing die bonding tape constructed according to the present invention and a semiconductor wafer, and the adhesive bonding of the dicing die bonding tape. A step of affixing the agent layer to the semiconductor wafer, and affixing the sticking origin of the base material layer to an annular dicing ring, and then attaching the outer peripheral portion of the base material layer excluding the sticking origin to the dicing ring The step of attaching to the semiconductor wafer, the step of dicing the semiconductor wafer and the adhesive layer, and after dicing, the adhesive layer to which the semiconductor chip is attached is peeled from the base material layer, And a step of taking out the semiconductor chip together with the adhesive layer. The step of affixing the laminated body to the divided semiconductor wafer, the affixing origin of the base material layer to an annular dicing ring, and then the outer peripheral portion of the base material layer excluding the adhering origin May be performed simultaneously with the step of adhering to the dicing ring.

In the dicing die bonding tape according to the present invention, the width of the portion to be attached to the dicing ring of the base material layer in the portion excluding the sticking origin is W (mm), and the outer diameter of the base material layer in the portion excluding the sticking origin is set. When D (mm), the length L (mm) of the sticking origin at a distance of 0.3 W (mm) from the outer peripheral tip of the base material layer toward the inside is 0.30 D- Since it is within the range of 0.44 D (mm), the base material layer sticking start point is attached to an annular dicing ring, and then the base material layer excluding the sticking start point is attached to the dicing ring. The dicing die bonding tape can be attached to the dicing ring while suppressing local deformation. For this reason, the dicing line after dicing is difficult to bend. Therefore, the pick-up property of the semiconductor chip with an adhesive layer can be improved.

Further, when a semiconductor chip with an adhesive layer is obtained using a laminate of a protective sheet and a semiconductor wafer after division, the adhesive wafer layer of the dicing die bonding tape is used for the semiconductor wafer after division of the laminate. Even if the protective sheet is peeled off from the semiconductor wafer after the division, the dicing line that is a cut portion of the semiconductor wafer after the division is not easily curved. For this reason, the adhesive layer can be diced with high accuracy and the pickup property can be improved.

1A and 1B are a partially cutaway plan view and a partially cutaway front sectional view schematically showing a dicing die bonding tape according to an embodiment of the present invention. FIG. 2 is a partially cutaway plan view schematically showing only the base material layer of the dicing-die bonding tape shown in FIG. 1 in an enlarged manner. FIG. 3 is a partially cutaway plan view schematically showing a modification of the base material layer of the dicing die bonding tape. FIG. 4 is a partially cutaway plan view schematically showing another modification of the base material layer of the dicing-die bonding tape. FIGS. 5A to 5D are partially cutaway front cross-sectional views for explaining an example of each process for obtaining a laminated body used when manufacturing a semiconductor chip with an adhesive layer. 6 (a) to 6 (b) are partially cutaway front views for explaining an example of a method of manufacturing a semiconductor chip with an adhesive layer using a dicing die bonding tape according to an embodiment of the present invention. It is sectional drawing. FIGS. 7A to 7B are partially cutaway front views for explaining an example of a method of manufacturing a semiconductor chip with an adhesive layer using a dicing die bonding tape according to an embodiment of the present invention. It is sectional drawing. FIG. 8A is a front sectional view showing a state when the dicing die bonding tape is attached to the dicing ring, and FIG. 8B is a view after the dicing die bonding tape is attached to the dicing ring. It is a top view which shows a state. FIGS. 9A and 9B are partially cutaway front views for explaining another method for manufacturing a semiconductor chip with an adhesive layer using a dicing die bonding tape according to an embodiment of the present invention. It is sectional drawing. 10 is a partially cutaway plan view schematically showing the shape of the base material layer of Comparative Example 1. FIG. FIG. 11 is a partially cutaway plan view schematically showing the shape of the base material layer of Comparative Example 2. FIG. 12 is a partially cutaway plan view schematically showing the shape of the base material layer of Comparative Example 3. FIG. 13 is a partially cutaway plan view schematically showing the shape of the base material layer of Comparative Example 4. FIG. 14 is a partially cutaway plan view schematically showing the shape of the base material layer of Comparative Example 5. FIG. 15 is a partially cutaway plan view schematically showing a modification of the dicing-die bonding tape shown in FIG.

Hereinafter, the present invention will be clarified by describing specific embodiments and examples of the present invention with reference to the drawings.

(Dicing-die bonding tape)
FIGS. 1A and 1B are diagrams schematically showing a dicing die bonding tape according to an embodiment of the present invention. FIG. 1A is a partially cutaway plan view, and FIG. 1B is a partially cutaway front sectional view taken along line II in FIG. 1A. In FIG. 1 and the drawings to be described later, for the convenience of illustration, dimensions and sizes are appropriately changed from actual dimensions and sizes.

As shown in FIGS. 1A and 1B, the dicing die bonding tape 1 has a long release layer 2. On the upper surface 2 a of the release layer 2, the adhesive layer 3, the base material layer 4, and the dicing layer 5 are laminated in this order. A base material layer 4 is laminated on one surface 3 a (first surface) of the adhesive layer 3. The release layer 2 is laminated on the other surface 3 b (second surface) of the adhesive layer 3.

A plurality of laminates having an adhesive layer 3, a base material layer 4, and a dicing layer 5 are arranged at equal intervals on the upper surface 2 a of the long release layer 2. A protective sheet may be provided on the upper surface 2a of the release layer 2 on the side of the laminate.

The release layer 2 is, for example, a release film. The release layer 2 is used for protecting the other surface 3b to which the semiconductor wafer of the adhesive layer 3 is attached. Note that the release layer 2 is not necessarily used.

The material constituting the release layer 2 includes polyester resins such as polyethylene terephthalate resin, polytetrafluoroethylene resins, polyethylene resins, polypropylene resins, polymethylpentene resins, polyolefin resins such as polyvinyl acetate resins, and polyvinyl chloride resins. And plastic resins such as polyimide resins.

The surface of the release layer 2 may be subjected to a release treatment. The release layer may be a single layer or a plurality of layers. When the release layer is a plurality of layers, each layer may be formed of different resins.

From the viewpoint of further improving the handleability or releasability of the release layer 2, the thickness of the release layer 2 is preferably in the range of 10 to 100 μm.

The adhesive layer 3 is a layer used for die bonding of semiconductor chips. The adhesive layer 3 is used for bonding a semiconductor chip to a substrate or another semiconductor chip.

The adhesive layer 3 is formed of, for example, a curable resin composition containing a curable compound such as an appropriate curable resin, or a thermoplastic resin. Since the curable resin composition before curing is soft, it is easily deformed by an external force. After obtaining the semiconductor chip with the adhesive layer 3, the obtained semiconductor chip with the adhesive layer 3 is laminated on an adherend such as a substrate from the adhesive layer 3 side. Thereafter, the semiconductor chip can be firmly bonded to the adherend via the adhesive layer 3 by applying heat or light energy to cure the adhesive layer 3.

A curing agent is used to cure the curable resin composition. Examples of the curing agent include heat curing acid anhydride curing agents such as trialkyltetrahydrophthalic anhydride, latent curing agents such as phenol curing agents, amine curing agents or dicyandiamide, and cationic catalyst curing. Agents and the like. In order to adjust the curing speed or the physical properties of the cured product, the curing agent and the curing accelerator may be used in combination.

The thickness of the adhesive layer 3 is not particularly limited. The thickness of the adhesive layer 3 is preferably in the range of 1 to 100 μm. The more preferable lower limit of the thickness of the adhesive layer 3 is 3 μm, and the more preferable upper limit is 60 μm. When the thickness of the adhesive layer 3 is within the above range, it is easy to attach the semiconductor chip, and it is possible to cope with the thinning of the semiconductor device.

The base material layer 4 has a non-adhesive part 4A having non-adhesiveness. The non-adhesive portion 4 </ b> A is provided in the central region of the base material layer 4. The non-adhesive portion 4A is provided at a portion corresponding to a position where the semiconductor wafer of the adhesive layer 3 is attached. The planar shape of the non-adhesive portion 4A is a circle. In plan view, the base material layer 4 is larger than the adhesive layer 3, and the non-adhesive part 4 </ b> A is larger than the adhesive layer 3. Accordingly, the non-adhesive portion 4A has a region that protrudes laterally from the outer peripheral side surface 3c of the adhesive layer 3. For this reason, when a semiconductor wafer is affixed to the adhesive layer 3, the semiconductor wafer can be accurately aligned with the portion where the non-adhesive portion 4A of the adhesive layer 3 is affixed. After pasting, the non-adhesive part 4A can be reliably arranged on one surface 3a of the adhesive layer 3 to which the semiconductor wafer is pasted. For this reason, the semiconductor chip with the adhesive layer 3 can be easily peeled off from the non-adhesive portion 4 </ b> A of the base material layer 4 after dicing. For this reason, production loss can be reduced and yield can be improved.

Note that “non-adhesive” includes not only the surface having no adhesiveness but also the case where the surface has an adhesiveness that does not stick when touched with a finger. Specifically, “non-adhesive” means that the adhesive strength is 0 when the non-adhesive portion 4A of the base material layer 4 is attached to a stainless steel plate and the base material layer 4 is peeled off at a peeling speed of 300 mm / min. .05 N / 25 mm width or less.

The base material layer 4 has the adhesive part 4B which has adhesiveness in the area | region of the outer part of 4 A of non-adhesive parts. The adhesive part 4B is annular. The base material layer 4 covers the adhesive layer 3, and the adhesive portion 4 </ b> B of the base material layer 4 is attached to the upper surface 2 a of the release layer 2. The non-adhesive part 4 </ b> A of the base material layer 4 is laminated on the entire one surface 3 a of the adhesive layer 3. The adhesive portion 4B is not laminated on the one surface 3a of the adhesive layer 3. A dicing ring is affixed to the adhesion part 4B of the base material layer 4 at the time of dicing.

FIG. 2 is an enlarged plan view showing only the base material layer 4 of the dicing die bonding tape 1.

As shown in FIG. 2, the base material layer 4 has a sticking start point 4C attached to the dicing ring at the start of sticking on the outer peripheral portion. The sticking start point 4C is a sticking start portion. When obtaining a semiconductor chip with an adhesive layer, the outer peripheral part of the base material layer 4 is stuck to the dicing ring from the sticking origin 4C. The part pasted on the dicing ring of the base material layer 4 is an adhesive part 4B having adhesiveness.

The planar shape of the base material layer 4 is substantially circular, and the planar shape of the base material layer 4 excluding the pasting start point 4C is a part of a circle. In FIG. 2, the imaginary line when the planar shape of the whole base material layer 4 is circular is indicated by a one-dot chain line.

The width of the part pasted on the dicing ring of the base material layer 4 excluding the sticking start point 4C is W (mm), and the outer diameter (diameter) of the base material layer 4 in the part excluding the sticking start point 4C is D (mm). . In the present embodiment, the length L (mm) of the sticking start point 4C at a distance of 0.3 W (mm) from the outer peripheral tip on the sticking start point 4C side of the base material layer 4 toward the inside is 0.30D to 0. Within the range of .44D (mm). When the length L is less than 0.30D, the possibility of local deformation occurring at the time of attachment increases. Also, if the length L exceeds 0.44D, the possibility of protruding from the dicing ring increases, and if the length L protrudes, it sticks to another dicing ring during conveyance to the next process, It may cause troubles such as sticking to the part. Furthermore, if the length of the sticking start point is too short, stress tends to concentrate on the sticking start point at the start of sticking. By increasing the length of the sticking start point, the stress at the start of sticking can be dispersed in the length direction of the sticking start point. For this reason, it is possible to prevent positional deviation of a plurality of semiconductor chips in the pre-diced semiconductor wafer after division.

The length at which the tip of the sticking origin 4C protrudes in the sticking direction from the tip in the sticking direction of the imaginary line (one-dot chain line in FIG. 2) when the planar shape of the entire base material layer 4 is circular is the protrusion length Z. (Mm). In the embodiment described later, the length that protrudes in the same manner is referred to as a protrusion length Z (mm). The protrusion length Z (mm) is preferably smaller than 0.20 W, and the protrusion degree is preferably small. When the protruding amount is large, the width of the portion to be affixed to the dicing ring may become uneven or stick out of the dicing ring when affixed to the dicing ring. The “sticking direction” is a direction connecting one end of the base material layer provided with a sticking start point to be stuck to the dicing ring at the start of sticking and the other end opposite to the one end.

The width W is the distance from the inner peripheral edge of the dicing ring to the outer peripheral edge of the base material layer 4 in a portion excluding the sticking start point 4C when the base material layer 4 is attached to the dicing ring.

The planar shape of the base material layer 4 excluding the sticking origin 4C portion is a part of a circle, and the outer diameter D indicates the outer diameter (diameter) of the base material layer 4 in the circular portion.

The sticking start point 4C has a width direction and a length direction longer than the width direction. The length L indicates the lengthwise dimension of the sticking start point 4C at a distance of 0.3 W from the outer peripheral tip of the base material layer 4 on the sticking start point 4C side inward, that is, inward in the sticking direction. . The length L is the length direction of the sticking start point 4C at a position of 0.3 W from the outer peripheral tip of the base material layer 4 on the sticking start point 4C side toward the side opposite to the sticking start point 4C side of the base material layer 4. Show dimensions.

The base material layer 4 has three convex portions 4a to 4c at the outer peripheral end on the sticking start point 4C side. The convex part 4b is located between the convex part 4a and the convex part 4c. The vertex of the convex part 4a is shown in FIG. 2 as B1, the vertex of the convex part 4b is A1, and the vertex of the convex part 4c is B2. A1 is the outer peripheral tip of the base material layer 4 on the side of the sticking origin 4C.

In the base material layer 4, B1 and A1 are connected in a straight line, and A1 and B2 are connected in a straight line. The planar shape of the portion surrounded by three straight lines connecting B1, A1 and B2 is an isosceles triangle in which the lengths of the straight line connecting B1 and A1 and the straight line connecting A1 and B2 are equal. An intersection of a straight line connecting B1 and B2 and a perpendicular line dropped from A1 on the straight line is shown as A11 in FIG.

B1 and the circular part of the base material layer 4, and B2 and the circular part of the base material layer 4 are connected in a straight line. The contact between B1 and the circular portion of the base material layer 4 is shown as C1, and the contact between B2 and the circular portion of the base material layer 4 is shown as C2 in FIG. A straight line connecting B <b> 1 and C <b> 1 is a tangent at C <b> 1 of the circular portion of the base material layer 4. A straight line connecting B <b> 2 and C <b> 2 is a tangent at C <b> 2 of the circular portion of the base material layer 4.

The non-adhesive part 4A and the adhesive part 4B of the base material layer 4 are integrally formed. The non-adhesive part 4A and the adhesive part 4B are formed of the same material, and are not formed of different materials.

The base material layer 4 can be formed using, for example, an active energy ray-curable or thermosetting adhesive composition. In the case of an active energy ray-curable composition, the adhesiveness of the base material layer 4 can be partially varied by partially adjusting the irradiation amount of the active energy ray with respect to the composition. In order for the base material layer 4 to have non-adhesiveness, the irradiation amount of the active energy rays may be increased. In order to make the base material layer 4 have adhesiveness, it is only necessary not to irradiate active energy rays or to reduce the irradiation amount of active energy rays.

The base material layer 4 is preferably formed of a composition containing an acrylic polymer. The base material layer 4 is preferably formed of a crosslinked body obtained by crosslinking a composition containing an acrylic polymer. In this case, the machinability during dicing can be further enhanced. Further, the polarity, storage elastic modulus, or elongation at break of the base material layer 4 can be easily controlled and designed.

The acrylic polymer is not particularly limited. The acrylic polymer is preferably a (meth) acrylic acid alkyl ester polymer. As the (meth) acrylic acid alkyl ester polymer, a (meth) acrylic acid alkyl ester polymer having an alkyl group having 1 to 18 carbon atoms is preferably used. By using a (meth) acrylic acid alkyl ester polymer having an alkyl group having 1 to 18 carbon atoms, the polarity of the base material layer 4 can be made sufficiently low, and the surface energy of the base material layer 4 can be made low. And the peelability from the base material layer 4 of the adhesive layer 3 can be made high.

The above composition preferably contains at least one of an active energy ray reaction initiator and a thermal reaction initiator, and more preferably contains an active energy ray reaction initiator. The active energy ray reaction initiator is preferably a photoreaction initiator.

The active energy rays include ultraviolet rays, electron rays, α rays, β rays, γ rays, X rays, infrared rays and visible rays. Among these active energy rays, ultraviolet rays or electron beams are preferable because they are excellent in curability and hardened products are hardly deteriorated.

As the photoreaction initiator, for example, a photo radical generator or a photo cation generator can be used. Examples of the thermal reaction initiator include a thermal radical generator. An isocyanate-based crosslinking agent may be added to the composition in order to control the adhesive force.

The thickness of the base material layer 4 is not particularly limited. The thickness of the base material layer 4 is preferably in the range of 1 to 100 μm. The more preferable lower limit of the thickness of the base material layer 4 is 5 μm, and the more preferable upper limit is 60 μm. When the thickness of the base material layer 4 satisfies the preferable lower limit, the expandability can be further enhanced. When the thickness of the base material layer 4 satisfies the preferable upper limit, the thickness becomes even more uniform, and the accuracy of dicing can be further improved.

The dicing layer 5 is, for example, a dicing film. As the material constituting the dicing layer 5, polyester resins such as polyethylene terephthalate resin, polytetrafluoroethylene resins, polyethylene resins, polypropylene resins, polymethylpentene resins, polyolefin resins such as polyvinyl acetate resins, polyvinyl chloride resins, And plastic resins such as polyimide resins. Of these, polyolefin resin is suitably used because of its excellent expandability and low environmental impact.

The thickness of the dicing layer 5 is not particularly limited. The thickness of the dicing layer 5 is preferably in the range of 10 to 200 μm. The more preferable lower limit of the thickness of the dicing layer 5 is 60 μm, and the more preferable upper limit is 150 μm. When the thickness of the dicing layer 5 is within the above range, the peelability of the release layer 2 and the expandability of the dicing layer 5 can be further enhanced.

In this embodiment, the planar shape of the dicing layer 5 is equal to the planar shape of the base material layer 4. The planar shape of the dicing layer 5 may be different from the planar shape of the base material layer 4. The size of the dicing layer 5 may be larger or smaller than the size of the base material layer 4 within a range that does not impair the effects of the present invention. The size of the dicing layer 5 is preferably larger than the size of the base material layer 4.

In the dicing-die bonding tape 1, a dicing layer 5 is used. The dicing layer 5 may be omitted, and the base material layer 4 may also serve as the dicing layer. In the dicing die bonding tape 1, since the dicing ring can be attached to the adhesive portion 4 </ b> B of the base material layer 4, it is not necessary to attach the dicing ring to the dicing layer 5. For this reason, the dicing layer 5 can be omitted. Since it is not necessary to attach a dicing ring to the dicing layer 5, the dicing layer 5 may not have adhesive force. Therefore, the material and composition which comprise the dicing layer 5 can be selected from a wider range.

Since dicing of the semiconductor chip can be more effectively prevented during dicing, the dicing layer is formed on the other surface of the base material layer 4 opposite to the one surface on which the adhesive layer 3 is attached. It is preferable that 5 is affixed. In this case, since expandability etc. are not requested | required largely by the base material layer 4, the material and composition which comprise the base material layer 4 can be selected from a wider range.

3 and 4 show a modification of the base material layer.

The base material layers 11 and 12 shown in FIGS. 3 and 4 are configured in the same manner as the base material layer 4 except that the shape of the sticking start point is different. The base material layers 11 and 12 have non-adhesive portions 11A and 12A, and adhesive portions 11B and 12B in the region of the outer peripheral portion of the non-adhesive portions 11A and 12A. The portions pasted on the dicing rings of the base material layers 11 and 12 are adhesive portions 11B and 12B having adhesiveness.

The planar shape of the base material layers 11 and 12 is substantially circular, and the planar shape of the base material layers 11 and 12 excluding the sticking start points 11C and 12C is a part of a circular shape. 3 and 4, the imaginary line when the planar shape of the entire base material layer 11, 12 is circular is indicated by a one-dot chain line. The width W (mm) of the portion pasted on the dicing ring of the base material layers 11 and 12 in the portion excluding the sticking starting points 11C and 12C of the base material layers 11 and 12, and the base material layer in the portion excluding the sticking starting points 11C and 12C The outer diameters of 11 and 12 are D (mm). The length L (mm) of the sticking starting points 11C and 12C at a position of 0.3 W (mm) from the outer peripheral tips of the base material layers 11 and 12 on the side of the sticking starting points 11C and 12C to the inside is 0.30D˜ It is within the range of 0.44D (mm). When the length L is less than 0.30D, the possibility of local deformation occurring at the time of attachment increases. Also, if the length L exceeds 0.44D, the possibility of protruding from the dicing ring increases, and if the length L protrudes, it sticks to another dicing ring during conveyance to the next process, It may cause troubles such as sticking to the part.

The base material layer 11 shown in FIG. 3 has four convex portions 11a to 11d at the outer peripheral end on the sticking start point 11C side. The convex part 11b and the convex part 11c are located between the convex part 11a and the convex part 11d, the convex part 11b is located on the convex part 11a side, and the convex part 11c is located on the convex part 11d side. ing. FIG. 3 shows the vertex of the convex portion 11a as B1, the vertex of the convex portion 11b as A1, the vertex of the convex portion 11c as A2, and the vertex of the convex portion 11d as B2. A1 and A2 are the outer peripheral tips of the base material layer 11 on the sticking start point 11C side.

In the base material layer 11, B1 and A1 are connected in a straight line, A1 and A2 are connected in a curve, and A2 and B2 are connected in a straight line. The planar shape of the portion surrounded by the four straight lines connecting B1, A1, A2, and B2 is an isosceles trapezoid with the straight line connecting A1 and A2 as the upper base and the straight line connecting B1 and B2 as the lower base. . The deepest part of the concave part between the convex part 11b and the convex part 11c is shown as A11 in FIG. Further, the intersection of the straight line connecting B1 and B2 and the perpendicular line dropped from A1 to the straight line is A21, and the intersection of the straight line connecting B1 and B2 and the perpendicular line dropped from A2 to the straight line is A22. It was shown in 3.

B1 and the circular part of the base material layer 11, and B2 and the circular part of the base material layer 11 are connected in a straight line. The contact point between B1 and the circular portion of the base material layer 11 is shown as C1, and the contact point between B2 and the circular portion of the base material layer 11 is shown as C2 in FIG. A straight line connecting B1 and C1 and a straight line connecting B2 and C2 are tangents at C1 and C2 of the circular portion of the base material layer 11, respectively.

The base material layer 12 shown in FIG. 4 has four convex portions 12a to 12d at the outer peripheral end on the sticking start point 12C side. The convex part 12b and the convex part 12c are located between the convex part 12a and the convex part 12d, the convex part 12b is located on the convex part 12a side, and the convex part 12c is located on the convex part 12d side. ing. FIG. 4 shows the vertex of the convex portion 12a as A1, the vertex of the convex portion 12b as A2, the vertex of the convex portion 21c as A3, and the vertex of the convex portion 21d as A4. A1, A2, A3, and A4 are all outer peripheral tips on the side of the sticking origin 12C of the base material layer 12.

In the base material layer 12, A1 and A2, A2 and A3, and A3 and A4 are connected by curves. The deepest part of the concave part between the convex part 12a and the convex part 12b is A11, the deepest part of the concave part between the convex part 12b and the convex part 12c is A12, and the deepest part of the concave part between the convex part 12c and the convex part 12d. The part is shown as A13 in FIG.

The circular part of A1 and the base material layer 12, and the circular part of A4 and the base material layer 12 are connected. The contact between A1 and the circular part of the base material layer 12 is shown as C1, and the contact between A4 and the circular part of the base material layer 12 is shown as C2 in FIG. A1 and C1 are connected by a curve and a straight line, the A1 side is a curve, and the C1 side is a straight line. The boundary between the curve extending from A1 and the straight line extending from C1 is shown in FIG. 4 as B1. A4 and C2 are connected by a curve and a straight line, the A4 side is a curve, and the C2 side is a straight line. The boundary between the curve extending from A4 and the straight line extending from C2 is shown in FIG. 4 as B2. The straight line extending from C1 and the straight line extending from C2 are tangents at C1 and C2 of the circular portion of the base material layer 12, respectively.

Let A21 be the intersection of the straight line connecting B1 and B2 and the perpendicular line dropped from A1 to the straight line, and let A22 be the intersection of the straight line connecting B1 and B2 and the perpendicular line dropped from A2 to the straight line. FIG. 4 shows the intersection of the straight line connecting B2 and the perpendicular line dropped from A3 as A23, and the intersection of the straight line connecting B1 and B2 and the perpendicular line dropped from A4 as A24 in FIG. .

The tips of the convex portions 12a to 12d are curved. The curvature at A1 to A4 of the outer peripheral tip of the base material layer 12 on the side of the sticking start point 12C is larger than the curvature of the outer peripheral end of the portion excluding the sticking start point 12C of the base material layer 12.

As shown in FIGS. 3 and 4, the length L (mm) of the sticking origin at a distance of 0.3 W (mm) from the outer peripheral tip of the base material layer toward the inside is 0.30D- As long as it is within the range of 0.44 D (mm), the planar shape of the sticking origin of the base material layer can be changed as appropriate.

Like the base material layer 12, it is preferable that the curvature of the outer periphery tip of the base material layer on the sticking start point side is larger than the curvature of the outer peripheral end of the portion excluding the sticking start point of the base material layer. In this case, when peeling from the release layer 2, the outer peripheral tip of the base material layer on the sticking start point side becomes a peel start point and can be easily peeled off to obtain a semiconductor chip with an adhesive layer. At this time, the adhesive layer can be diced with higher accuracy.

The outer peripheral tip of the base material layer 4 on the sticking start point 4C side is the vertex A1 of the convex portion 4b. The outer peripheral tips of the base material layer 11 on the side of the sticking origin 11C are the vertices A1 and A2 of the convex portions 11b and 11c. The outer peripheral tips of the base material layer 12 on the sticking start point 12C side are vertices A1 to A4 of the convex portions 12a to 12d. Thus, it is preferable that the base material layer has a convex portion at the outer peripheral end on the sticking start point side, and the outer peripheral tip on the sticking start point side of the base material layer 3 is the apex of the convex portion. In this case, when peeling from the release layer 2, the convex portion on the sticking start point side of the base material layer becomes the peeling start point, and can be easily peeled off, and a semiconductor chip with an adhesive layer is obtained. At this time, the adhesive layer can be diced with higher accuracy.

The base material layer 11 has a plurality of convex portions 11a to 11d at the outer peripheral end on the sticking start point 11C side, and the convex portions 11b and the convex portions 11c are connected by a curve. The base material layer 12 has a plurality of protrusions 12a to 12d at the outer peripheral end on the sticking start point 12C side, and the plurality of protrusions 12a to 12d are connected by a curve. Thus, it is preferable that a base material layer has a some convex part in the outer peripheral end by the side of sticking origin, and this some convex part is continued with the curve. In this case, when it peels from the release layer 2, it becomes a peeling start point and can be easily peeled off. When obtaining a semiconductor chip with an adhesive layer, the adhesive layer can be diced with higher accuracy.

Further, in the base material layers 4, 11, and 12, the internal angle formed by the sticking start points 4C, 11C, and 12C and the portions excluding the sticking start points 4C, 11C, and 12C is 180 degrees or less. That is, in the base end portions at the sticking starting points 4C, 11C, and 12C, the sticking starting points 4C, 11C, and 12C and the portions other than the sticking starting points 4C, 11C, and 12C are connected so that the inner angle is 180 degrees or less. Thus, when the internal angle is 180 degrees or less, the base material layer can be prevented from being cut at the base end of the sticking origin. When the internal angle exceeds 180 degrees, the base material layer tends to be easily cut at the base end of the sticking start point.

In the dicing die bonding tape 1 shown in FIG. 1, only one sticking start point 4C is provided on one base material layer 4. The sticking start point 4 </ b> C is provided on one end side in the length direction of the long release layer 2. FIG. 15 shows a modification of the dicing-die bonding tape. The dicing-die bonding tape 1 shown in FIG. 1 and the dicing-die bonding tape 51 shown in FIG. 15 differ in the number of sticking starting points and the formation position in the base material layer, and the dicing layer also differs accordingly. The shape of the sticking start point 4C provided on the dicing-die bonding tape 1 and the sticking start point 52C of the base material layer 52 provided on the dicing-die bonding tape 51 are the same. The shape of the base material layer 52 and the dicing layer 53 provided on the dicing-die bonding tape 51 is the same. In FIG. 15, the base material layer 52 is covered with a dicing layer 53.

In the dicing die bonding tape 51 shown in FIG. 15, two base points 52C are provided on one base material layer 52. The sticking start point 52C is provided on one end side in the length direction of the long release layer 2 and on the other end side opposite to the one end side. Thus, it is preferable that a plurality of sticking start points are provided on one base material layer, and it is preferable that at least two sticking start points are provided. When a plurality of sticking start points are provided on one base material layer, the sticking start points are preferably provided on one end side of the base material layer and the other end side opposite to the one end side. In this case, the directionality when using the dicing die bonding tape can be eliminated. For example, when a base material layer cannot be stuck well from the sticking origin of one end side, it is possible to stick a base material layer from the sticking origin of the other end side. More specifically, when the base material layer cannot be applied well from the starting point on one end side, once the long dicing-die bonding tape is wound up and then unwound again, the other end side is recovered. It is possible to affix the base material layer from the affixing starting point.

(Manufacturing method of semiconductor chip with adhesive layer)
Next, an example of a method for manufacturing a semiconductor chip with an adhesive layer when the dicing die bonding tape 1 shown in FIGS. 1A, 1B and 2 is used will be described.

First, a dicing die bonding tape 1 and a laminate 21 are provided.

As shown in FIG. 5 (d), the laminate 21 has a protective sheet 22 and a divided semiconductor wafer 23 laminated on one surface 22 a of the protective sheet 22. After the division, the semiconductor wafer 23 is divided into individual semiconductor chips. The planar shape of the divided semiconductor wafer 23 is a circle.

The laminate 21 can be obtained through the steps shown in FIGS. 5A to 5D as follows.

First, as shown in FIG. 5A, a semiconductor wafer 23A is prepared. The semiconductor wafer 23A is a pre-division semiconductor wafer. The planar shape of the semiconductor wafer 23A is a circle. On the surface 23a of the semiconductor wafer 23A, circuits for forming individual semiconductor chips are formed in each region partitioned by streets in a matrix.

As shown in FIG. 5B, the prepared semiconductor wafer 23A is diced from the surface 23a side. After the dicing, the semiconductor wafer 23A is not divided. On the surface 23a of the semiconductor wafer 23A, cuts 23c for dividing into individual semiconductor chips are formed. The dicing is performed using, for example, a dicing apparatus including a blade that rotates at high speed.

Next, as shown in FIG. 5C, a protective sheet 22 is attached to the surface 23a of the semiconductor wafer 23A. Thereafter, the back surface 23b of the semiconductor wafer 23A is ground to reduce the thickness of the semiconductor wafer 23A. Here, the back surface 23b of the semiconductor wafer 23A is ground to the notch 23c portion. In this way, the laminate 21 shown in FIG. 5 (d) can be obtained.

The back surface 23b of the semiconductor wafer 23A is preferably ground to the notch 23c portion. Grinding is performed using a grinder such as a grinder equipped with a grinding magnet or the like. At the time of grinding, since the protective sheet 22 is affixed to the surface 23a of the semiconductor wafer 23A, grinding waste does not adhere to the circuit. Moreover, even if the semiconductor wafer 23A is divided into individual semiconductor chips after grinding, the plurality of semiconductor chips remain attached to the protective sheet 22 without being separated.

After obtaining the laminated body 21, as shown in FIG. 6A, the laminated body 21 is placed on the stage 25 from the protective sheet 22 side. An annular dicing ring 26 is provided on the stage 25 at a position spaced apart from the outer peripheral side surface of the divided semiconductor wafer 23 by a predetermined distance. Dicing—During the release layer 2 of the die bonding tape 1 or after peeling the release layer 2, the exposed other surface 3 b of the adhesive layer 3 is applied to the back surface 23 b of the divided semiconductor wafer 23. paste. Further, the exposed outer peripheral portion of the base material layer 4 is pasted to the dicing ring 26 from the pasting starting point 4C.

FIG. 8A shows a state in which the base material layer 4 is attached to the dicing ring 26 in a front sectional view, and FIG. 8B shows a state after the base material layer 4 is attached to the dicing ring 26 in a plan view. Shown in the figure.

As shown in FIGS. 8A and 8B, when the base material layer 4 is attached to the dicing ring 26, the base material layer 4 and the dicing layer 5 are usually separated from each other by using the peeling edge 32. 2 is peeled off from the upper surface 2a. The sticking start point 4C of the base material layer 4 is stuck to the dicing ring 26, and the top of the sticking start point 4C is pressed by the roll 31. And the outer periphery of the base material layer 4 is extended, extending the adhesive agent layer 3, the base material layer 4, and the dicing layer 5 so that a wrinkle may not arise in the adhesive layer 3, the base material layer 4, and the dicing layer 5. The part is attached to the dicing ring 26. A shrinkage force acts on the base material layer 4 and the dicing layer 5 attached to the dicing ring 26.

When the shrinkage force is partially different, for example, after the base material layer is attached to the dicing ring or after the protective sheet is peeled off from the divided semiconductor wafer, the cut portion of the divided semiconductor wafer, that is, the dicing line is curved. Cheap.

In the dicing-die bonding tape 1, the length L (mm) is in the range of 0.30D to 0.44D (mm). That is, when the base material layer 4 of the dicing die-bonding tape 1 is attached to the dicing ring, the dicing ring is positioned at a distance of 0.3 W inward from the outer peripheral tip of the base material layer 4 on the sticking start point 4C side. Then, the outer peripheral portion of the base material layer 4 excluding the sticking origin 4C is stuck to the dicing ring 26. In other words, the length L (mm) of the portion of the base material layer 4 to be affixed to the dicing ring 26 at the start of affixing is within the range of 0.30D to 0.44D (mm). Therefore, the shrinkage force of the base material layer 4 attached to the dicing ring 26 and the adhesive layer 3 and the dicing layer 5 laminated on the base material layer 4 are not easily greatly different.

Therefore, after the base material layer 4 is attached to the dicing ring 26 or after the protective sheet 22 is peeled off from the divided semiconductor wafer 23 attached to the adhesive layer 3, the dicing line of the divided semiconductor wafer 23 is obtained. Is difficult to bend. For this reason, the adhesive layer 3 can be diced with high accuracy. Furthermore, the pick-up property of the semiconductor chip with the adhesive layer 3 can be enhanced.

After the base material layer 4 is attached to the dicing ring 26, as shown in FIG. 6B, the divided semiconductor wafer 23 to which the adhesive layer 3 is attached is taken out from the stage 25 and turned over. At this time, the dicing ring 26 is taken out in a state of being attached to the adhesive portion 4B of the base material layer 4. The separated semiconductor wafer 23 taken out is turned over so that the front surface 23a faces upward, and is placed on another stage 27.

Next, as shown in FIG. 7A, the protective sheet 22 is peeled off from the surface 23a of the semiconductor wafer 23 after the division. When the protective sheet 22 is peeled off, the protective sheet 22 may be heated to facilitate peeling.

Next, as shown in FIG. 7B, the adhesive layer 3 is diced along the cuts 23c (cut portions) of the divided semiconductor wafer 23, that is, along the dicing lines. The adhesive layer 3 is diced so as to penetrate both sides, and divided into individual semiconductor chip sizes. After dicing, a cut portion 3d is formed in the adhesive layer 3. When the dicing die bonding tape 1 is used, a non-adhesive portion 4A having non-adhesiveness is located below the adhesive layer 3 portion to which the divided semiconductor wafer 23 is attached. Therefore, dicing can be performed with high accuracy. For this reason, the pick-up property of the semiconductor chip with an adhesive layer can be improved after dicing.

Dicing is not particularly limited as long as it is performed so as to penetrate the adhesive layer 3. Examples of the method for dicing the adhesive layer 3 include a method using a dicing blade and a method for laser dicing. When using the divided semiconductor wafer 23, a method of laser dicing is generally used.

When the non-adhesive part 4A of the intermediate layer 4 is hardened, for example, the non-adhesive part 4A hardly reacts by irradiation with laser light. For this reason, the base material layer 4 is hardly fused to the adhesive layer 3. Therefore, even when dicing using laser light is performed, the semiconductor chip can be picked up without difficulty.

After the semiconductor wafer is diced and divided into individual semiconductor chips, the dicing layer 5 is extended to expand the interval between the divided individual semiconductor chips. Thereafter, the semiconductor chip is peeled off from the base material layer 4 together with the adhesive layer 3 and taken out. In this way, a semiconductor chip with the adhesive layer 3 can be obtained.

Also, it is preferable to take out the semiconductor chip after dicing without changing the peeling force between the adhesive layer 3 and the non-adhesive portion 4A. The non-adhesive part 4A attached to the adhesive layer 3 of the base material layer 4 has non-adhesiveness. Therefore, the semiconductor chip with the adhesive layer 3 can be taken out without difficulty after dicing without changing the peeling force.

Next, another example of the manufacturing method of the semiconductor chip with an adhesive layer using the dicing die bonding tape 1 shown in FIGS. 9A and 9B will be described below.

First, the dicing-die bonding tape 1 and the semiconductor wafer 41 described above are prepared. The planar shape of the semiconductor wafer 41 is a circle. The semiconductor wafer 41 is not divided into individual semiconductor chips.

As shown in FIG. 9A, the semiconductor wafer 41 is turned over and the semiconductor wafer 41 turned over is placed on the stage 25 from the surface 41a side. An annular dicing ring 26 is provided on the stage 25 at a position spaced apart from the outer peripheral side surface of the semiconductor wafer 41 by a certain distance. Dicing—Delging the release layer 2 of the die bonding tape 1 or after peeling the release layer 2, the other surface 3 b of the exposed adhesive layer 3 is attached to the back surface 41 b of the semiconductor wafer 41. . Further, the exposed outer peripheral portion of the base material layer 4 is pasted to the dicing ring 26 from the pasting starting point 4C.

Next, as shown in FIG. 9B, the semiconductor wafer 41 to which the adhesive layer 3 is attached is taken out of the stage 25 and turned over. At this time, the dicing ring 26 is taken out in a state of being attached to the adhesive portion 4B of the base material layer 4. The taken-out semiconductor wafer 41 is turned over so that the front surface 41 a faces upward, and placed on another stage 27. Next, the semiconductor wafer 41 is diced together with the adhesive layer 3 and divided into individual semiconductor chips. The semiconductor wafer 41 and the adhesive layer 3 are each divided so as to penetrate both surfaces. After dicing, a cut portion 41 c is formed in the semiconductor wafer 41, a cut portion 3 d is formed in the adhesive layer 3, and a cut is formed in the base material layer 4.

Next, the semiconductor chip with the adhesive layer 3 can be obtained by extending the dicing layer 5 and peeling the semiconductor chip together with the adhesive layer 3 from the base material layer 4 and taking it out.

Hereinafter, the present invention will be specifically described by giving examples and comparative examples. The present invention is not limited to the following examples.

(Acrylic polymer 1)
95 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of 2-hydroxyethyl acrylate, 0.2 parts by weight of Irgacure 651 (manufactured by Ciba Geigy Co., Ltd., 50% ethyl acetate solution), and 0.01 parts by weight of lauryl mercaptan Was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Furthermore, 3.5 parts by weight of 2-methacryloyloxyethyl isocyanate (produced by Showa Denko KK, Karenz MOI) is reacted with 100 parts by weight of the solid content of this solution to obtain an acrylic copolymer (acrylic polymer 1). Obtained. The obtained acrylic polymer 1 had a weight average molecular weight of 700,000 and an acid value of 0.86 (mgKOH / g).

Further, the following compounds were prepared as materials constituting the composition for forming the base material layer.

(Photopolymerization initiator)
Irgacure 651 (Ciba Japan)

(Oligomer)
U324A: manufactured by Shin-Nakamura Chemical Co., Ltd., urethane acrylic oligomer (10 functional urethane acrylic oligomer), weight average molecular weight: 1,300

(Crosslinking agent)
Coronate L-45: manufactured by Nippon Polyurethane Industry Co., Ltd., isocyanate-based crosslinking agent

(Dicing layer)
A polyethylene film as a dicing layer having a thickness of 100 μm was manufactured by a T-die method using polyethylene (manufactured by Prime Polymer Co., Ltd., M12) as a raw material.

Example 1
In Example 1, a dicing die bonding tape and a base material layer having the shapes shown in FIGS. 1A, 1B and 2 were formed.

(1) Production of first laminate 100 parts by weight of the above-mentioned acrylic polymer 1, 1 part by weight of Irgacure 651, 15 parts by weight of U324A which is a urethane acrylic oligomer, and 1 part by weight of Coronate L-45 Was added to obtain an adhesive composition. The obtained pressure-sensitive adhesive composition was coated on a release PET film, dried at 110 ° C. for 5 minutes, the solvent was removed, and a composition layer was formed.

The surface on which the base material layer of the polyethylene film that is the dicing layer was laminated was subjected to mirror finishing and corona treatment. The polyethylene film was affixed on the surface of the composition layer opposite to the surface on which the release PET film was affixed. Thereafter, it was stored at 40 ° C. for 24 hours.

Next, light was applied to the central region of the obtained composition layer using a mercury lamp so as to have an energy of 2000 mJ / cm ² to cure the composition layer. Thus, the base material layer (thickness 20 micrometers) which has a non-adhesion part in the center area | region and has an adhesion part in the area | region of the outer part of this non-adhesion part was obtained.

Thus, a first laminate in which the release PET film, the base material layer, and the dicing layer were laminated in this order was obtained.

(2) Production of second laminate G-2050M (manufactured by NOF Corporation, epoxy-containing acrylic polymer, weight average molecular weight Mw 200,000) 15 parts by weight, EXA-7200HH (DIC Corporation, dicyclopentadiene type epoxy) 70 Parts by weight, 15 parts by weight of HP-4032D (manufactured by DIC, naphthalene type epoxy), 38 parts by weight of YH-309 (manufactured by Mitsubishi Chemical Corporation, acid anhydride curing agent), and 2MAOK-PW (manufactured by Shikoku Kasei Co., Ltd.) 8 parts by weight of imidazole), 2 parts by weight of S320 (manufactured by Chisso Corporation, aminosilane) and 4 parts by weight of MT-10 (manufactured by Tokuyama Corporation, surface hydrophobized fumed silica) were blended to obtain a blend. The obtained blend was added to methyl ethyl ketone (MEK) as a solvent so as to have a solid content of 60% by weight and stirred to obtain a coating solution.

The obtained coating liquid was applied on a release PET film so as to have a thickness of 10 μm, and dried by heating in an oven at 110 ° C. for 2 minutes.

Thereafter, the second laminate is processed so that the planar shape of the adhesive layer is a circle having the diameter shown in Table 1 below, and the adhesive layer is laminated on the release PET film. Got.

(3) Production of dicing-dyne bonding tape Next, the release PET film of the first laminate was peeled to expose the base material layer. A laminate of the base material layer and the dicing layer was laminated at 60 ° C. on the adhesive layer from the base material layer side to obtain a laminate. Thereafter, the substrate layer and the dicing layer were cut out so as to have the shapes shown in FIGS. 1A, 1B and 2 and the dimensions shown in Table 1 below. In this way, a dicing die bonding tape having a laminated structure of four layers in which the release PET film / adhesive layer / base material layer / dicing layer was laminated in this order was produced.

In the obtained dicing die-bonding tape, the non-adhesive part was larger than the adhesive layer, and the non-adhesive part had a region projecting laterally from the outer peripheral side surface of the adhesive layer. .

(Examples 2 to 4)
In Examples 2 to 4, a dicing die bonding tape and a base material layer having the shapes shown in FIGS. 1A and 1B and FIG. 2 were formed. A dicing die bonding tape was produced in the same manner as in Example 1 except that the dimensions of the base material layer and the dicing layer were changed as shown in Table 1 below. In FIG. 2, the tip of the sticking starting point 4C does not protrude in the sticking direction from the tip in the sticking direction of the imaginary line (dotted line) when the planar shape of the entire base material layer 4 is circular. In Example 4, the tip of the sticking start point 4C protrudes in the sticking direction from the tip in the sticking direction of the virtual line.

(Examples 5 to 6)
In Examples 2 to 6, dicing was performed in the same manner as in Example 1 except that the shapes and dimensions of the base material layer and the dicing layer were as shown in FIG. 3 and changed to the dimensions shown in Table 2 below. -Die bonding tape was made. In addition, in FIG. 3, although the front-end | tip of sticking origin 11C does not protrude in the sticking direction from the front-end | tip in the sticking direction of the virtual line (one-dot chain line) when the planar shape of the whole base material layer 11 is circular, it implemented. In Example 6, the tip of the sticking start point 11C protruded in the sticking direction from the tip in the sticking direction of the virtual line.

(Example 7)
In Example 7, the shape and dimensions of the base material layer and the dicing layer were as shown in FIG. 4 and changed to the dimensions shown in Table 3 below. A bonding tape was prepared.

(Comparative Examples 1 to 5)
In Comparative Examples 1 to 5, the shape and dimensions of the base material layer and the dicing layer were any of the shapes shown in FIGS. 10 to 14 shown in Table 4 below and changed to the dimensions shown in Table 4 below. A dicing die bonding tape was prepared in the same manner as in Example 1 except that.

In Comparative Examples 1, 2, 4, and 5, the planar shape of the base material layer was substantially circular, and the planar shape of the base material layer excluding the sticking origin portion was a part of a circle. 10 to 11 and 13 to 14, imaginary lines when the planar shapes of the entire base material layers 101 to 102 and 104 to 105 are circular are indicated by alternate long and short dash lines. In Comparative Example 3, the planar shape of the base material layer 103 was circular.

(Evaluation)
A notch with a depth of 100 μm was made on the surface of a semiconductor wafer (silicon wafer, thickness 80 μm) having a diameter of 300 mm (12 inches). Next, a backgrinding tape ICROS SB135S-BN (made by Mitsui Chemicals Co., Ltd., with an acrylic adhesive applied to one side of an olefin) as a protective sheet was laminated on the surface of the semiconductor wafer from the acrylic adhesive side. Next, after grinding the back surface of the semiconductor wafer until the thickness of the semiconductor wafer reached 35 μm, the back surface of the semiconductor wafer was mirror-finished using CMP slurry until the thickness of the semiconductor wafer reached 30 μm. Thus, the laminated body of the protection sheet and the semiconductor wafer after a division | segmentation was obtained.

Next, using a wafer mounter DAM-812M (manufactured by Takatori Co., Ltd.), the dicing die bonding film was bonded to the back surface of the semiconductor wafer and the dicing ring (outer diameter 400 mm, inner diameter 350 mm) after dividing the laminate. The stage on which the semiconductor wafer was placed after the division of the laminate was set to 60 ° C.

Next, the divided semiconductor wafer with the adhesive layer attached was taken out of the stage, turned over, and placed on another stage. Thereafter, the protective sheet was peeled off at 60 ° C. from the surface of the divided semiconductor wafer.

Next, using a dicing apparatus DFL7160 (manufactured by Disco Corporation), the laser output is 0.5 W, the frequency is 50 kHz, the feed rate is 100 mm / second, the defocus amount is -0.05 mm, and the focal position adhesive layer surface is adhesive. The adhesive layer was diced into individual semiconductor chip sizes. After dicing, using a die bonder best D-02 (manufactured by Canon Machinery Co., Ltd.), 20 semiconductor chips with an adhesive layer were formed under the conditions of a collet size of 8 mm square, a push-up speed of 5 mm / second, and a pickup temperature of 23 ° C. Picked up continuously.

In the production of the semiconductor chip with an adhesive layer, the following evaluation items (1) to (4) were evaluated.

(1) Extrusion property The extrusion property at the time of sticking the outer peripheral part of a base material layer to a dicing ring from the sticking origin was determined by the following criteria.

[Criteria for protruding properties]
○: The base material layer could be attached to the dicing ring without any problems. ×: The base material layer sticking origin could not be attached to the dicing ring.

(2) Presence or absence of breakage or deformation of base material layer after pasting The presence or absence of breakage or deformation of the base material layer after pasting to the semiconductor wafer after division was determined according to the following criteria.

[Criteria for determining whether the base material layer is cut or deformed after pasting]
○: No cutting or deformation of the base material layer after pasting Δ: Although the base material layer was not cut after pasting, it was stretched ×: The base material layer was cut after pasting

(3) Extrusion of base material layer Extrusion of the base material layer when the outer peripheral portion of the base material layer was attached to the dicing ring from the sticking origin was determined according to the following criteria.

[Criteria for protrusion of base material layer after pasting]
○: The base material layer did not protrude from the dicing ring after pasting ×: The base material layer protruded from the dicing ring after pasting

(4) Calf shift After the protective sheet was peeled off, the cut portion of the divided semiconductor wafer was observed, and the kerf shift was determined according to the following criteria.

[Criteria for kerf shift]
○: There is no alignment abnormality of a plurality of semiconductor chips, and there is no portion where there is no cut portion between two semiconductor chips adjacent to the two semiconductor chips on the extended line of the cut portion between the two semiconductor chips. The semiconductor chip is misaligned, and there is a portion where the cut portion between two semiconductor chips adjacent to the two semiconductor chips does not exist on the extended line of the cut portion between the two semiconductor chips.

(5) Pickup property The pickup property of the semiconductor chip with an adhesive layer was determined according to the following criteria.

[Pickup criteria]
○: No semiconductor chip that could not be picked up ×: Semiconductor chip that could not be picked up

This pickup failure was mainly caused by the inclination of the semiconductor chip due to the kerf abnormality (semiconductor chip alignment abnormality), and was due to insufficient recognition of the semiconductor chip.

The results are shown in Table 5 below.

DESCRIPTION OF SYMBOLS 1 ... Dicing-die bonding tape 2 ... Release layer 2a ... Upper surface 3 ... Adhesive layer 3a ... One side 3b ... Other side 3c ... Outer peripheral side 3d ... Cutting part 4 ... Base material layer 4A ... Non-adhesive part 4B ... Adhesive part 4C ... Pasting start point 4a-4c ... Convex part 5 ... Dicing layer 11, 12 ... Base material layer 11A, 12A ... Non-adhesive part 11B, 12B ... Adhesive part 11C, 12C ... Pasting start point 11a-11d, 12a- 12d ... convex part 21 ... laminated body 22 ... protective sheet 22a ... one side 23 ... divided semiconductor wafer 23A ... semiconductor wafer 23a ... front side 23b ... back side 23c ... notch 25 ... stage 26 ... dicing ring 27 ... stage 31 ... roll 32 ... Peeling edge 41 ... Semiconductor wafer 41a ... Front side 41b ... Back side 41c ... Cut part 51 ... Dicing die bonding tape 52 ... base layer 52c ... sticking origin 53 ... Dicing layer

Claims (7)

An adhesive layer;
A base material layer laminated on one surface of the adhesive layer,
During dicing, a dicing ring is attached to the outer peripheral portion of the base material layer,
The base material layer has an application starting point to be attached to the dicing ring at the start of application to the outer peripheral part,
The width of the portion of the base material layer that is affixed to the dicing ring in the portion excluding the sticking starting point is W (mm), and the outer diameter of the base material layer in the portion excluding the sticking starting point is D (mm). sometimes,
The length L (mm) of the sticking starting point at a position of 0.3 W inward from the outer peripheral tip of the base material layer on the sticking starting point side is in the range of 0.30D to 0.44D (mm). Dicing die bonding tape. The dicing-die bonding tape according to claim 1, wherein a curvature of an outer peripheral tip of the base material layer on the sticking start point side is larger than a curvature of an outer peripheral end of a portion excluding the sticking start point of the base material layer. The base material layer has a convex portion at the outer peripheral end on the sticking origin point side,
The dicing-die bonding tape according to claim 1 or 2, wherein an outer peripheral tip of the base material layer on the sticking start point side is an apex of the convex portion. 2. The dicing die bonding tape according to claim 1, wherein the base material layer has a plurality of convex portions at an outer peripheral end on the sticking origin side, and the plurality of convex portions are connected in a curved line. The dicing-die bonding tape according to any one of claims 1 to 4, a protective sheet, and a semiconductor wafer after division that is laminated on one surface of the protective sheet and is divided into individual semiconductor chips With a laminate having
Bonding the adhesive layer of the dicing die-bonding tape to the divided semiconductor wafer of the laminate;
Affixing the sticking starting point of the base material layer to an annular dicing ring, and then sticking the outer peripheral portion of the base material layer excluding the sticking starting point to the dicing ring;
Peeling the protective sheet from the divided semiconductor wafer;
Dicing the adhesive layer along the cut portion of the semiconductor wafer after the division; and
A semiconductor with an adhesive layer, comprising: after dicing, peeling off the adhesive layer to which the semiconductor chip is attached from the base material layer and taking out the semiconductor chip together with the adhesive layer. Chip manufacturing method. Forming a notch for dividing the semiconductor wafer into individual semiconductor chips on the surface of the semiconductor wafer;
A step of attaching a protective sheet to the surface of the semiconductor wafer in which the cuts are formed;
The pressure-sensitive adhesive layer according to claim 5, further comprising the step of grinding the back surface of the semiconductor wafer to which the protective sheet is attached, dividing the semiconductor wafer into individual semiconductor chips, and obtaining the laminate. For manufacturing a semiconductor chip with a chip. Using the dicing die bonding tape according to any one of claims 1 to 4 and a semiconductor wafer,
Bonding the adhesive layer of the dicing-die bonding tape to the semiconductor wafer;
Affixing the sticking starting point of the base material layer to an annular dicing ring, and then sticking the outer peripheral portion of the base material layer excluding the sticking starting point to the dicing ring;
Dicing the semiconductor wafer and the adhesive layer;
A semiconductor with an adhesive layer, comprising: after dicing, peeling off the adhesive layer to which the semiconductor chip is attached from the base material layer and taking out the semiconductor chip together with the adhesive layer. Chip manufacturing method.

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