WO2011081130A1 - Semiconductor wafer, semiconductor device, and semiconductor device manufacturing method - Google Patents

Abstract

Disclosed is a semiconductor wafer provided with: a semiconductor substrate having a first surface and a second surface on the opposite side of the first surface wherein multiple circuit elements are formed on the first surface and a first scribe line area is disposed between the areas where said circuit elements are formed; an insulating film formed on the second surface side of the aforementioned semiconductor substrate; and wiring formed on the aforementioned insulating film. A second scribe line area is provided on the aforementioned second surface side of the aforementioned semiconductor substrate along the aforementioned first scribe line area in an area where the aforementioned insulating film has not been formed.

Description

Semiconductor wafer, semiconductor device, and manufacturing method of semiconductor device

The present invention relates to a semiconductor wafer, a semiconductor device, and a semiconductor device manufacturing method using a semiconductor substrate covered with an insulating film. In particular, the present invention relates to a semiconductor wafer, a semiconductor device, and a method for manufacturing the semiconductor device that prevent peeling of an insulating film in a dicing process.
This application claims priority based on Japanese Patent Application No. 2009-296880 filed in Japan on December 28, 2009, the contents of which are incorporated herein by reference.

Conventionally, for example, in a semiconductor package such as a so-called dual inline package (DIP) or quad flat package (QFP) in which a silicon chip is sealed with a resin, the side surface of the resin package is used. Peripheral terminal arrangement type in which metal leads are arranged in the part or the peripheral part has been the mainstream.

On the other hand, as a semiconductor package structure widely spread in recent years, for example, there is a ball grid array (BGA) type. Since this BGA type has a structure in which electrodes called solder bumps are two-dimensionally arranged on the flat surface of the package, it can be mounted at a higher density than DIP or QFP. For this reason, the BGA type is used as a package for a CPU and a memory of a computer. The package size of the BGA type semiconductor package is larger than the chip size. However, among BGA type packages, a package that is downsized to almost the size of the chip is called a chip scale package (CSP), and greatly contributes to the reduction in size and weight of electronic devices. .

A BGA type semiconductor package cuts a wafer substrate on which a circuit is formed and mounts the semiconductor chip on a substrate called an interposer to complete the package. In addition to the need for a patterned interposer, individual semiconductors A process of individually mounting the chip on the interposer is necessary. For this reason, a dedicated material or manufacturing apparatus has to be used, and there is a drawback that the cost is increased.

On the other hand, in the manufacturing method called CSP, especially “wafer level CSP”, an insulating resin layer, a rewiring layer, a sealing resin layer, a solder bump, etc. are formed on this wafer substrate, and a semiconductor wafer is formed in the final process. A semiconductor device having a package structure can be obtained by cutting to a predetermined chip size (see, for example, Patent Document 1). Therefore, since the package structure is collectively formed on the wafer-like semiconductor substrate, an interposer is not required as in the prior art, and since processing is performed in the wafer state, a dedicated apparatus is not required. For this reason, the manufacturing efficiency is high and the cost disadvantage is reduced.

A semiconductor device obtained from a semiconductor wafer by wafer level CSP is obtained by performing package processing on the entire surface of the wafer and then dicing into individual pieces. Therefore, the size of the singulated chip itself becomes a packaged semiconductor device, and a semiconductor device having a minimum projected area with respect to the mounting substrate can be obtained. Further, the wiring distance is shorter than that of the conventional package, and the parasitic capacitance of the wiring is also small.

Among the semiconductor device manufacturing processes employing the wafer level CSP, in a dicing process for separating a semiconductor wafer, a scribe line region is cut using a dicing blade. At the time of dicing, in order to prevent mechanical defects from occurring inside the circuit element, control is performed such as adjusting the rotational speed of the dicing blade, the dicing speed (relative speed between the wafer and the dicing blade), and the like.

In addition, as a technique for realizing further miniaturization of a semiconductor device, a wafer level CSP using a through-electrode (Through-Silicon Via, TSV) has been proposed. The through electrode is an alternative to conventional wire bonding, and is used as an electrode by filling a through hole formed perpendicularly to the inside of a semiconductor device with a conductive metal. The through electrode technology can greatly reduce the wiring distance as compared with the conventional method of connecting by wire bonding, and thus contributes to higher speed, power saving, and downsizing of the semiconductor device.
These excellent features are extremely advantageous in that high-density mounting and high-speed information processing can be realized, which are currently progressing rapidly.

As a semiconductor wafer using a conventional through electrode, for example, there is one described in Patent Document 2. FIG. 7A is a view showing a cross section of a conventional semiconductor wafer 100.
In the conventional semiconductor wafer 100, a circuit element 103 is provided on a first surface 102a of a wafer-like semiconductor substrate 102 made of Si (silicon), and penetrates from the second surface 102b of the semiconductor substrate 102 to the first surface 102a. A through-hole 107 is provided. An insulating film 105 is formed on the inner surface of the through hole 107 and at least the second surface side 102 b of the semiconductor substrate 102. A wiring 106 is formed on the insulating film 105. The insulating film 105, the wiring 106, and the through hole 107 constitute a through electrode 120.

Reference numeral 104 denotes an electrode pad that is electrically connected to the through electrode 120, and is covered with a passivation layer 108. Reference numeral 109 denotes a protective layer covering the circuit element region on the second surface side 102 b of the semiconductor substrate 102. The above semiconductor elements are bonded to a supporting substrate 110 made of glass by an adhesive layer 111.
Reference numeral 115 denotes a dicing tape for holding the semiconductor device 100 in the dicing process.

A first scribe line region R10 is provided on the first surface side 102a of the semiconductor substrate 102, and a second scribe line is provided on the second surface side 102b in order to prevent the protective layer 109 from being involved in the dicing process. A region R11 is provided. In the second scribe line region R11, the protective layer 109 is removed along the scribe line L, and a groove 130 is formed in advance along the scribe line L, thereby facilitating dicing and dicing. The circuit element 103 is prevented from being damaged in the process.

Japanese Unexamined Patent Publication No. 2002-280476 Japanese Patent Laid-Open No. 5-152435

FIG. 7B is a cross-sectional view showing a state in which the dicing blade B is inserted during the dicing process of the semiconductor wafer 100 having the above configuration.
As shown in FIG. 7B, when dicing is performed on the conventional semiconductor wafer 100, since the insulating film 105 exists in the second scribe line region R11, when the dicing blade B contacts the insulating film 105, the insulating film 105 is insulated. There was a problem that peeling of the film 105 (indicated by reference numeral C1) occurred.
FIG. 8 is a top view of the vicinity of a dicing line after the conventional semiconductor wafer 100 is diced by the dicing blade B. FIG. The peeling of the insulating film 105 occurs from the dicing line L in the direction in which the through electrode 120 and the circuit element are formed. As shown in FIGS. 7B and 8, the insulating film 105 is peeled off from the upper surface in the vicinity of the dicing line L. Further, the insulating film 105 on the inner surface of the through hole 107 may be peeled off. Further, the peeling of the insulating film 105 reaches the circuit element region, which causes a defect in the semiconductor device 100. As a result, the semiconductor substrate 102 may be chipped near the dicing blade B as the insulating film 105 is peeled off.

The present invention has been made in view of such circumstances, and provides a semiconductor wafer, a semiconductor device, and a method for manufacturing the semiconductor device that can prevent the insulating film constituting the semiconductor wafer from peeling off in the dicing process. Objective.

In order to solve the above problems, the present invention adopts the following configuration.
(1) In the semiconductor wafer according to one aspect of the present invention, a first surface on which a plurality of circuit elements and a first scribe line region provided between the plurality of circuit elements are formed is opposite to the first surface. A semiconductor wafer comprising: a semiconductor substrate having a second surface on the side; an insulating film formed on the second surface side of the semiconductor substrate; and a wiring formed on the insulating film, A second scribe line region that is a region where the insulating film is not formed is provided along the first scribe line region on the second surface side of the substrate.
(2) In the semiconductor wafer, a recess may be formed on the second surface of the semiconductor substrate along the second scribe line region.
(3) A through hole penetrating from the second surface to the first surface may be formed in the semiconductor substrate; and the insulating film may be formed on an inner surface of the through hole.
(4) The circuit element may be an optical element, and a transparent substrate may be bonded to the first surface on which the circuit element is formed.

(5) A semiconductor device according to an aspect of the present invention is a semiconductor device formed by cutting a semiconductor wafer along a scribe line, the first surface on which circuit elements are formed, and the first surface, Comprises a semiconductor substrate having a second surface on the opposite side, an insulating film formed on the second surface side of the semiconductor substrate, and a wiring formed on the insulating film, the insulating film comprising: It is located inside the cutting surface formed by cutting along the scribe line.

(6) A method for manufacturing a semiconductor device according to one embodiment of the present invention provides a semiconductor substrate in which a plurality of circuit elements are formed on a first surface side and a first scribe line region is provided between the plurality of circuit elements. A semiconductor substrate preparing step, an insulating film forming step of forming an insulating film on an inner surface of the through hole and the second surface side of the semiconductor substrate, a wiring forming step of forming a wiring on the insulating film, and the semiconductor Forming a protective layer for individually covering the area where the circuit elements are formed on the second surface side of the substrate, and forming a second scribe line area between the protective layers; and forming the protective layer Then, an insulating film removing step for removing the insulating film exposed to the second scribe line region, and a dicing step for cutting the semiconductor wafer from the second surface side along the scribe line are provided.
(7) In the manufacturing method of the semiconductor device, the insulating film removing step may be performed, and a recess may be formed on the second surface of the semiconductor substrate along the second scribe line region.
(8) The method for manufacturing a semiconductor device may further include a through hole forming step of forming a through hole penetrating from the second surface of the semiconductor substrate to the first surface of the semiconductor substrate; The insulating film may be formed on the inner surface of the through hole and on the second surface side of the semiconductor substrate.
(9) The method for manufacturing a semiconductor device further includes a step of adhering a support substrate to the first surface side of the semiconductor substrate; in the dicing step, the semiconductor substrate and the support substrate are diced in one step. May be.

According to the semiconductor wafer according to the aspect of the present invention, the first scribe line region is provided on the first surface side of the semiconductor substrate constituting the semiconductor wafer, and the insulating film formed on the second surface side of the semiconductor substrate has the first A second scribe line region, which is a region where the insulating film is separated, is provided along one scribe line region. Therefore, an effect that the peeling of the insulating film in the dicing process can be prevented can be obtained.

According to the semiconductor device according to the aspect of the present invention, the insulating film ends on the first surface side and the second surface side of the semiconductor substrate are separated from the end portions of the semiconductor device. However, it is not affected by the stress generated at the end portion of the semiconductor substrate by dicing, so that the defect that the insulating film peels can be reduced. In addition, even when an external stress is generated in the end portion of the semiconductor device, it can be prevented that the insulating film is affected.

In the method of manufacturing a semiconductor device according to the aspect of the present invention, a protective layer that individually covers a region where a circuit element is formed is formed on the second surface side of the semiconductor substrate, and a second scribe line region is provided between the protective layers. A protective layer forming step; and an insulating film removing step of removing the insulating film exposed to the second scribe line region after forming the protective layer. Therefore, an effect that the peeling of the insulating film in the dicing process can be prevented can be obtained.

1 is a plan view of a semiconductor wafer according to a first embodiment of the present invention. FIG. 2 is a cross-sectional view taken along line AA in FIG. It is sectional drawing which shows the modification of the semiconductor wafer which concerns on 1st embodiment of this invention. It is sectional drawing which shows the dicing process of the semiconductor wafer before the dicing concerning this invention. It is sectional drawing which shows the dicing process of the semiconductor wafer in the dicing which concerns on this invention. It is sectional drawing of the semiconductor device separated into pieces by dicing. It is sectional drawing explaining the removal process of an insulating film. It is sectional drawing explaining the removal process of the insulating film after FIG. 5A. It is sectional drawing explaining the removal process of the insulating film after FIG. 5B. It is a fragmentary sectional view of a semiconductor wafer concerning a second embodiment of the present invention. It is sectional drawing which shows the dicing process of the semiconductor wafer before the conventional dicing. It is sectional drawing which shows the dicing process of the semiconductor wafer in the conventional dicing. It is a top view at the time of dicing the conventional semiconductor wafer.

<First embodiment>
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a plan view showing a semiconductor wafer according to a first embodiment of the present invention, and shows a semiconductor wafer 1 before being separated into semiconductor devices. 2A is a cross-sectional view taken along the line AA in FIG. 1, and shows the periphery of the scribe line L. FIG.
As shown in FIG. 1, the semiconductor wafer 1 according to the first embodiment of the present invention is cut into pieces into a plurality of semiconductor devices by cutting along a predetermined scribe line L. A circuit element 3 is formed in a region defined by the scribe line L on the semiconductor wafer 1. A through electrode 20 is formed in the region of the circuit element 3.

2A, reference numeral 1 is a semiconductor wafer, reference numeral 2 is a semiconductor substrate, reference numeral 3 is a circuit element, reference numeral 4 is an electrode pad, reference numeral 5 is an insulating film, reference numeral 6 is a wiring, reference numeral 7 is a through hole, reference numeral 8 is a passivation layer. Reference numeral 9 denotes a protective layer, reference numeral 10 denotes a support substrate, and reference numeral 11 denotes an adhesive layer. The through electrode 20 includes the insulating film 5, the wiring 6, and the through hole 7.

In this semiconductor wafer 1, as shown in FIG. 2A, the semiconductor substrate 2 provided with the through electrodes 20 and the like is bonded to the support substrate 10 by the adhesive layer 11.
An electrode pad 4 is provided on the first surface side 2 a of the semiconductor substrate 2. A through hole 7 is formed from the second surface 2 b of the semiconductor substrate 2 to the first surface 2 a of the semiconductor substrate 2 where the electrode pads 4 are provided. The surface on which the electrode pad 4 is provided is protected by the passivation layer 8.

An insulating film 5 is provided on both surfaces (first surface and second surface) of the semiconductor substrate 2 and the inner surface of the through hole 7. The insulating film 5 is, for example, SiO ₂ , SiN, or a resin film. Furthermore, wiring 6 is formed on the insulating film 5 on the inner surface of the through hole 7 and on the second surface side 2 b of the semiconductor substrate 2. The wiring 6 is electrically connected to the electrode pad 4.
The second surface 2 b of the semiconductor wafer 2 is covered with a protective layer 9. The protective layer 9 is not always necessary, and the through electrode 20 and the wiring 6 may be exposed.

The semiconductor substrate 2 is, for example, a semiconductor substrate such as silicon or GaAs.
The support substrate 10 is a substrate formed of a material different from that of the semiconductor substrate 2, and a material whose thermal expansion coefficient is close to that of the semiconductor substrate 2 is desirable.
As the adhesive constituting the adhesive layer 11, an adhesive made of a material having electrical insulation is used. As the adhesive forming the adhesive layer 11, for example, polyimide resin, epoxy resin, benzocyclobutane (BCB) resin, silicone resin, acrylic resin, and the like are desirable.
The semiconductor substrate 2 may be a transparent substrate or an opaque substrate. The adhesive layer 11 may be a transparent resin layer or an opaque resin layer. The semiconductor substrate 2 and the adhesive layer 11 can be appropriately selected according to the properties of the circuit element 3 provided on the semiconductor substrate 2.

The circuit element 3 is, for example, a semiconductor functional element such as a memory, an IC, an imaging element, and a MEMS element. The wiring 6 is a wiring layer formed of a conductor (such as various metals or alloys) such as Cu, Al, Ni, Ag, Pb, Sn, Au, Co, Cr, Ti, TiW. The formation method of the circuit element 3 as a wiring layer is not specifically limited, For example, sputtering method, a vapor deposition method, a plating method etc., or the combination of these 2 or more methods is mentioned. Further, the circuit element 3 as the wiring layer may be a single conductor layer or a laminate of multiple conductor layers. Moreover, a photolithography technique is suitably used for patterning the wiring layer.
The circuit element 3 may be, for example, a light emitting type or a light receiving type optical element. For example, the circuit element 3 may be an element that receives light from the support substrate 10 and changes the optical signal into an electrical signal. Further, the circuit element 3 may be a light emitter that emits light by itself.
When the circuit element 3 is an optical element, a transparent glass substrate or a transparent resin substrate can be selected as the support substrate 10. Furthermore, the adhesive layer 11 is also preferably transparent.
When the circuit element 3 is an optical element, it is preferable to select a resin whose optical characteristics are close to that of the support substrate 10 for the adhesive layer 11. For example, the adhesive layer 11 may be formed of a resin whose refractive index is close to that of the support substrate 10. Specifically, for example, when the support substrate 10 is made of glass (refractive index: about 1.5), a silicone resin (refractive index: about 1.4 to 1.5) is used as the adhesive layer 11 close to the refractive index of glass. Can be selected. In addition, an acrylic resin (refractive index: about 1.5) or an epoxy resin (about 1.5 to 1.6) can be selected. In the present embodiment, the transparent adhesive layer 11 is employed, but the present embodiment is not limited to this. For example, an opaque resin can be selected as the adhesive layer 11. In this case, as shown in FIG. 2B, the adhesive layer 11 is not formed in a portion corresponding to the formation region of the circuit element 3. Therefore, light can freely enter or exit through the region where the adhesive layer 11 is not formed.
In the present embodiment, a support substrate 10 is provided on the first surface 2a on which the circuit element 3 is formed. Therefore, when the circuit element 3 is an optical element, the protection of the support substrate 10 can prevent the optical element from being affected by dust or the like.

Reference symbol L is a scribe line referred to when the semiconductor wafer 1 is diced.
A first scribe line region R <b> 1 is provided on the first surface side 2 a of the semiconductor substrate 2. The scribe line region is for separating the region into individual semiconductor devices by cutting the region with a dicing blade. In FIG. 2A, the symbol R1 indicates the width of the first scribe line region. On the first surface side 2 a of the semiconductor substrate 2, the insulating film 5 has a region separated along the scribe line L by the width of the first scribe line region R 1. That is, the insulating film 5 is not provided in the first scribe line region R1 on the first surface side 2a. Further, the center line of the first scribe line region R1 coincides with the scribe line L.

On the second surface side 2b of the semiconductor substrate 2, a second scribe line region R2 having a slightly larger width than the first scribe line region R1 is provided. In the second scribe line region R2, the protective layer 9 is not formed along the scribe line L. That is, in the present embodiment, the width R1 of the first scribe line region and the width R2 of the second scribe line region satisfy the relationship R1 <R2.
Usually, the peeling of the insulating film occurs on both surfaces (first surface and second surface) of the semiconductor substrate. Among them, since the first surface of the semiconductor substrate is covered with an adhesive layer and the second surface of the semiconductor substrate is exposed to the outside, the insulating film is more easily peeled off on the second surface than the first surface. . In this embodiment, the width of the second scribe line region R2 is relatively wide (R1 <R2), so that the peeling of the insulating film on the second surface can be reliably ensured.
In the semiconductor wafer 1 according to the first embodiment of the present invention, the insulating film 5 formed on the second surface side 2b of the semiconductor substrate 2 also includes a region separated along the scribe line L. The separation width is the same as that of the second scribe line region R2. That is, the insulating film 5 is not provided in the second scribe line region R2 on the second surface side 2b.
Further, the center line of the second scribe line region R2 coincides with the scribe line region L. That is, the center line of the first scribe line region R1 and the center line of the second scribe line region R2 are coincident.

Furthermore, a recess 13 is provided in the semiconductor substrate 2 in the second scribe line region R2. The recess 13 is a part where the surface of the semiconductor substrate 2 is scraped over a predetermined depth with respect to the second surface 2 b of the semiconductor substrate 2. In other words, in the second scribe line region R2, the semiconductor substrate 2 is provided with a step with respect to the second surface 2b, and the semiconductor substrate 2 is thinner than the other regions.
Since the thickness of the semiconductor substrate in the region to be cut becomes thinner as the height of the step becomes larger, dicing can be easily performed. As a result, chipping defects during dicing can be reduced.
When forming a through hole in a semiconductor substrate, the semiconductor substrate is usually shaved to reduce its thickness, and then the through hole is formed. At this time, since various circuit elements are formed on the first surface of the semiconductor substrate, the second surface is shaved. However, the surface of the second surface has defects in the crystal lattice or fine cracks. Therefore, conventionally, when the insulating film is diced together with the second surface of the semiconductor substrate by the dicing blade B, there is a problem that the insulating film formed on the second surface is easily peeled off.
However, in this embodiment, since the insulating film is not formed in the second scribe line region R2, dicing can be performed more easily. Furthermore, it is possible to reliably prevent the insulating film from peeling off.
The through electrode is usually formed at a corner of the circuit element. That is, the through hole of the through electrode is formed in a region near the scribe line L. Therefore, in the conventional semiconductor wafer 100, the through hole is easily affected by dicing along the scribe line L. Therefore, when dicing along the scribe line L, the insulating film 105 formed on the second surface 102a of the semiconductor substrate 102 is easily peeled off. As the insulating film 105 is peeled off, the insulating film formed inside the through hole may be peeled off. Furthermore, since the crystal lattice on the second surface has defects or fine cracks, the semiconductor substrate in the part of the insulating film 105 that has been peeled off may be lost.
However, the insulating film 5 is not provided in the second scribe line region R2 on the second surface side 2b of the semiconductor substrate 2 according to the present embodiment. Therefore, peeling of the insulating film 5 on the second surface side 2b can be reliably prevented. As a result, peeling of the insulating film 5 inside the through hole can be surely prevented. Furthermore, since the semiconductor substrate is thinned by the recess 13 in the scribe line region R2, dicing can be easily performed. Accordingly, the semiconductor substrate can be prevented from being chipped.
Furthermore, when the circuit element is an optical element, it is necessary to increase the formation area of the circuit element in order to ensure the characteristics of the optical element. In this case, the formation region of the through electrode 20 comes closer to the scribe line L side (outside). Therefore, in the conventional semiconductor wafer 100, the insulating film, the through hole, and the like are more easily affected by dicing. On the other hand, according to the present embodiment, even if the circuit element is an optical element, it is possible to reliably prevent the insulating film from peeling while securing a sufficient formation area.

Next, with reference to FIG. 3A and FIG. 3B, the dicing process which cut | disconnects the semiconductor wafer 2 along the scribe line L and separates into pieces is demonstrated.
The dicing process of the semiconductor wafer 1 is performed by attaching the dicing tape 15 to the front surface of the first side of the semiconductor wafer (opposite the dicing surface) and fixing the entire semiconductor wafer 1 to a frame (not shown). As the dicing tape 15, for example, a UV tape whose viscosity is changed by irradiating ultraviolet rays can be used.

Next, the semiconductor wafer 1 is cut along the scribe line L using the dicing blade B.
By cutting the semiconductor wafer 1, the semiconductor wafer 1 is separated into individual semiconductor devices. The dicing tape 15 loses its adhesive force by irradiating ultraviolet rays or the like, and then removes the semiconductor device from the dicing tape 15.
As shown in FIG. 3B, the second scribe line region R <b> 2 has a width that is slightly larger than the width of the dicing blade B. That is, the protective layer 9 and the insulating film 5 are separated from the end face of the dicing blade B by a predetermined dimension. Specifically, the width of the scribe line region R2 is preferably about 140 μm with respect to the width of the dicing blade B of 70 μm.
The width of the first scribe line region R1 is preferably 100 μm.

Through the above steps, a semiconductor device 50 as shown in FIG. 4 can be manufactured. As shown in FIG. 4, the end portions of the insulating films formed on both surfaces of the semiconductor substrate constituting the semiconductor device are separated from the end portion 50a of the semiconductor device by a predetermined distance.
Specifically, the distance D1 between the end portion of the insulating film 5 formed on the first surface side 2a of the semiconductor substrate 2 and the end surface 50a of the semiconductor device 50 is 15 μm. The distance D2 between the end of the insulating film 5 formed on the second surface side 2b of the semiconductor substrate 2 and the end surface 50a of the semiconductor device 50 is 35 μm.

Next, a method for forming the second scribe line region R2 according to the first embodiment of the present invention will be described with reference to FIGS. 5A, 5B, and 5C. 5A to 5C are partial cross-sectional views of the semiconductor wafer 1 according to the first embodiment of the present invention, in particular, an enlarged view of a portion where the second scribe line region R2 is provided.

In forming the second scribe line region R2, first, as shown in FIG. 5A, a protective layer 9a having a thickness T1 is formed. The thickness T1 of the protective layer 9a is appropriately determined according to the finally desired thickness of the protective layer 9. The protective layer 9a having such a shape can be manufactured by a photolithography technique using a photosensitive resin. The protective layer 9a having such a shape can also be manufactured by pattern-etching a non-photosensitive resin.

Next, as shown in FIG. 5B, etching is performed on the second surface (dicing surface) of the semiconductor wafer 1. This etching is performed by introducing a CF etching gas as a reaction gas and generating plasma. In this step, scum generated during the formation of the protective layer 9a is removed, and the protective layer 9a, the insulating film 5, and the semiconductor substrate 2 are etched to a predetermined thickness by etching. 5B shows the surface of the protective layer 9a before etching.
By this etching, the protective layer 9a formed by the process shown in FIG. 5A is etched, and at the same time, the insulating film 5 and the semiconductor substrate 2 are etched.

Finally, as shown in FIG. 5C, a scribe line region R2 is formed. In the scribe line region R <b> 2, the protective layer 9 and the insulating film 5 are not formed along the scribe line region L, and a recess 13 in which a step portion is provided with respect to the semiconductor substrate 2 is formed.

The semiconductor wafer 1 according to the first embodiment of the present invention is characterized in that the second scribe line region R2 having the above-described configuration is provided. By adopting a configuration in which the insulating film 5 is not provided in the second scribe line region R2, problems that the insulating film 5 is peeled off in the dicing process can be reduced.
Furthermore, according to the semiconductor wafer 1 according to the first embodiment of the present invention, since the recess 13 is provided in the second scribe line region R2, the thickness of the semiconductor substrate 2 in the second scribe line region R2 is reduced. Further, chipping defects of the semiconductor substrate 2 in the dicing process can be reduced.
Usually, the semiconductor substrate and the support substrate are formed of different materials to form a composite substrate. Conventionally, in order to dice a composite substrate formed of different materials, it has been necessary to select a rotation speed of a dicing blade, a raw material, or the like according to the material, so that it is very difficult to perform dicing in one step. However, in the present embodiment, by forming the recess 13, the composite substrate can be diced in one step, and can be diced more easily and in a short time.

<Second embodiment>
FIG. 6 is a partial sectional view showing a semiconductor wafer according to the second embodiment of the present invention, and corresponds to FIG. 2 of the first embodiment.
The second embodiment differs from the first embodiment in the widths of the first scribe line region and the second scribe line region.

The semiconductor wafer 1b according to the second embodiment can be manufactured by substantially the same manufacturing method as the semiconductor wafer 1 according to the first embodiment.
In the dicing process, the semiconductor wafer 1b according to the second embodiment performs cutting along the scribe line region R2b provided on the second surface side 2b. As a result, the positioning of the dicing blade is facilitated, and a problem that the dicing blade comes off the scribe line region R1b on the first surface side 2a and contacts the insulating film 5 during dicing can be avoided.
In the present embodiment, the width R1 of the first scribe line region and the width R2 of the second scribe line region satisfy the relationship R1> R2. As shown in FIG. 6, when dicing with the dicing blade B, the first surface 2a is not visible. However, since the width R2 of the second scribe line region is smaller than the width R1 of the first scribe line region, dicing on the first surface can be ensured in the first scribe line region. Therefore, in addition to the effect in the first embodiment, the dicing range on the first surface is shifted, and the influence on the insulating film on the first surface can be reliably prevented.

The present invention can be widely applied to semiconductor devices including an insulating film on a substrate and a through electrode separated by a dicing process.

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 Semiconductor substrate 3 Circuit element 4 Electrode pad 5 Insulating film 6 Wiring 7 Through-hole 8 Passivation layer 9 Protective layer 10 Support substrate 11 Adhesive layer 13 Recessed part 15 Dicing tape 20 Through electrode 50 Semiconductor device

Claims (9)

A semiconductor substrate having a first surface on which a plurality of circuit elements and a first scribe line region provided between the plurality of circuit elements are formed; and a second surface opposite to the first surface;
An insulating film formed on the second surface side of the semiconductor substrate;
A wiring formed on the insulating film;
A semiconductor wafer comprising:
A semiconductor wafer, wherein a second scribe line region, which is a region where the insulating film is not formed, is provided along the first scribe line region on the second surface side of the semiconductor substrate. The semiconductor wafer according to claim 1, wherein a recess is formed in the second surface of the semiconductor substrate along the second scribe line region. A through-hole penetrating from the second surface to the first surface is formed in the semiconductor substrate;
The semiconductor wafer according to claim 1, wherein the insulating film is formed on an inner surface of the through hole. The circuit element is an optical element,
The semiconductor wafer according to claim 1, wherein a transparent substrate is bonded to the first surface on which the circuit element is formed. A semiconductor device formed by cutting a semiconductor wafer along a scribe line,
A semiconductor substrate having a first surface on which circuit elements are formed and a second surface opposite to the first surface;
An insulating film formed on the second surface side of the semiconductor substrate;
Wiring formed on the insulating film; and
The semiconductor device according to claim 1, wherein the insulating film is located inside a cutting surface formed by cutting along the scribe line. A semiconductor substrate preparation step of preparing a semiconductor substrate in which a plurality of circuit elements are formed on the first surface side and a first scribe line region is provided between the plurality of circuit elements;
An insulating film forming step of forming an insulating film on the second surface side of the semiconductor substrate;
A wiring forming step of forming a wiring on the insulating film;
Forming a protective layer individually covering the area where the circuit elements are formed on the second surface side of the semiconductor substrate, and providing a second scribe line area between the protective layers;
An insulating film removing step of removing the insulating film exposed to the second scribe line region after forming the protective layer;
A dicing step of cutting the semiconductor wafer from the second surface side;
A method for manufacturing a semiconductor device comprising: The method for manufacturing a semiconductor device according to claim 6, wherein the insulating film removing step is performed and a recess is formed in the second surface of the semiconductor substrate along the second scribe line region. A through hole forming step of forming a through hole penetrating from the second surface of the semiconductor substrate to the first surface of the semiconductor substrate;
8. The method of manufacturing a semiconductor device according to claim 6, wherein in the insulating film forming step, the insulating film is formed on an inner surface of the through hole and on the second surface side of the semiconductor substrate. A step of adhering a support substrate to the first surface side of the semiconductor substrate;
8. The method of manufacturing a semiconductor device according to claim 6, wherein in the dicing step, the semiconductor substrate and the support substrate are diced in one step.

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