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WO2011074755A1 - Procédé de traitement de substrat - Google Patents

Procédé de traitement de substrat Download PDF

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Publication number
WO2011074755A1
WO2011074755A1 PCT/KR2010/004663 KR2010004663W WO2011074755A1 WO 2011074755 A1 WO2011074755 A1 WO 2011074755A1 KR 2010004663 W KR2010004663 W KR 2010004663W WO 2011074755 A1 WO2011074755 A1 WO 2011074755A1
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WO
WIPO (PCT)
Prior art keywords
chamber
substrate
layer
reaction chamber
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2010/004663
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English (en)
Korean (ko)
Inventor
홍성재
한석만
진주
정진열
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ligadp Co Ltd
Original Assignee
Ligadp Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020090124224A external-priority patent/KR101062463B1/ko
Priority claimed from KR1020090124226A external-priority patent/KR101062459B1/ko
Priority claimed from KR1020090124678A external-priority patent/KR101075179B1/ko
Priority claimed from KR1020090135715A external-priority patent/KR101078596B1/ko
Priority claimed from KR1020090135707A external-priority patent/KR101071249B1/ko
Application filed by Ligadp Co Ltd filed Critical Ligadp Co Ltd
Priority to CN2010800638633A priority Critical patent/CN102804413A/zh
Publication of WO2011074755A1 publication Critical patent/WO2011074755A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H10P72/3311—
    • H10P72/0456—
    • H10P72/0468—
    • H10P72/3304—
    • H10P72/3402—

Definitions

  • an LED Light Emitting Diode
  • One such method for forming an n-type layer, an active layer, or a p-type layer is a metal organic chemical vapor deposition method (Metal Organic Chemical Vapor Deposition).
  • the organometallic chemical vapor deposition method is a method of injecting a metal organic compound gas toward a heated substrate and causing a chemical reaction on the heated substrate surface to form a desired film on the surface of the substrate.
  • the cause of the problem is that the temperature and gas atmosphere required for each step of depositing the layers are different, so that the temperature must be raised or lowered to the required temperature, or each step must be stopped and waited while adjusting the gas atmosphere.
  • n-type comprising a group-III element and a group-V element on the substrate by a vapor deposition process in the first chamber
  • Forming an n-type layer Removing the substrate from the first chamber into a buffer chamber and then loading the substrate into a second chamber different from the first chamber; And forming an active layer including a group-III element and a group-V element on the substrate by a vapor deposition process in the second chamber.
  • group-III element may include at least one of aluminum (Al), gallium (Ga), and indium (In).
  • the n-type layer may include n-type GaN (n-type GaN).
  • the active layer may include at least one of GaN, InGaN, AlGaN, InAlGaN.
  • the internal temperature of the second chamber may be about 700 to 900 degrees Celsius.
  • the internal temperature of the buffer chamber may be about 600 ⁇ 900 degrees Celsius.
  • the internal gas atmosphere of the buffer chamber may be a hydrogen gas atmosphere.
  • the n-type layer may include two or more layers selected from an n-type GaN layer, an n-type AlGaN layer, and an n-type InGaN layer, and each of the two or more selected layers may be formed by vapor deposition in a different chamber. Can be formed on.
  • the method may further include carrying out the substrate from the second chamber to the buffer chamber, and carrying the substrate into a third chamber different from the first and second chambers; And forming a p-type layer including a group-III element and a group-V element on the substrate by a vapor deposition process in the third chamber. It may further include.
  • the p-type layer may include at least one of p-type GaN and p-type AlGaN.
  • a group-III element and a group-V element are formed on the substrate by a vapor deposition process in a fourth chamber different from the first to third chambers. forming an undoped layer comprising an element; And removing the substrate from the fourth chamber to the buffer chamber and then carrying the substrate into the first chamber.
  • the undoped layer may include undoped-GaN.
  • each process can be carried out immediately by bringing the substrate into each reaction chamber. Therefore.
  • the time required for temperature control or gas atmosphere control can be shortened.
  • the buffer chamber is previously adjusted to the temperature required for the next step of the process, the time required to adjust the temperature of the substrate in the reaction chamber in which the next step of the process will be carried out can be saved.
  • the buffer chamber can prevent the film quality deterioration due to a sudden temperature change.
  • the temperature of the buffer chamber may be adjusted to be similar to the temperature of the first reaction chamber.
  • the process time can be shortened because the next process can be performed without interruption by bringing the substrate into another reaction chamber.
  • the yield per unit time may be increased.
  • FIG. 1 is a schematic plan view of a first embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment.
  • FIG. 2 is a schematic cross-sectional view A-A 'of the chemical vapor deposition apparatus of FIG.
  • FIG. 4 is a schematic plan view of a third embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment.
  • FIG. 5 is a schematic plan view of a fourth embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment.
  • FIG. 7 is a flowchart of a substrate processing method using a chemical vapor deposition apparatus including nine reaction chambers.
  • FIG. 8 is a flowchart of a substrate processing method using a chemical vapor deposition apparatus including six reaction chambers.
  • FIG. 9 is a flow chart of a substrate processing method using a chemical vapor deposition apparatus including three reaction chambers.
  • FIG. 1 is a schematic plan view of a first embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment.
  • the chemical vapor deposition apparatus includes a reaction chamber 1100, a buffer chamber 1200, a transfer apparatus, a gas supply unit 1400, and a power supply unit ( 1500, and a control unit 1600.
  • the transfer device includes a substrate supply / discharge device 1310, a first pickup device 1320, an actuator unit 1330, a robot arm 1340, a first plate 1350a, a second plate 1350b, and a first device. It may include a three plate (1350c) and the second pickup device (1370).
  • the substrate supply / discharge apparatus 1310 is a means for supplying a substrate (W) in the form of a wafer (wafer) to the workplace or to discharge the substrate to the outside of the workplace, conveyor, transport robot, pickup robot or linear actuator ( linear actuator) or the like.
  • the actuator unit 1330 includes a first actuator 1331, a second actuator 1332, and a third actuator 1333.
  • the first actuator 1331, the second actuator 1332, and the third actuator 1333 respectively include the first plate 1350a, the second plate 1350b, and the third plate 1350c in the respective reaction chambers 1100.
  • the first plate 1350a, the second plate 1350b, and the third plate 1350c are the same plates on which the substrate or susceptor can be loaded.
  • Each plate is provided with a recess or hole through which the lift unit 1380 can be lifted and lifted so as to lift the substrate or susceptor loaded on the plate upper surface.
  • the robot arm 1340 may hold the susceptor S and enter the buffer chamber 1200 to lower the susceptor on the upper surface of the first plate 1350a.
  • the robot arm 1340 may transfer the susceptor mounted on the upper surface of the first plate 1350a to the second plate 1350b in the buffer chamber 1200, and may be loaded on the upper surface of the second plate 1350b.
  • the susceptor may be transferred to the third plate 1350c.
  • the lift unit 1380 may be provided inside the buffer chamber as a member for elevating the susceptor.
  • the robot arm 1340 enters the buffer chamber and then lifts the lifter 1380 to lift the susceptor S.
  • the lift unit 1380 descends to lower the susceptor S on the plates 1350a, 1350b, and 1350c.
  • the robot arm 1340 may enter the buffer chamber 1200 through the buffer chamber gate 1213.
  • the susceptor placed on the first plate 1350a may be transferred to the second plate 1350b or the third plate 1350c.
  • the configuration of the transfer device is not limited to the embodiments described below, and various modifications are possible to carry out or carry the substrate into the plurality of reaction chambers and the buffer chamber.
  • the gas supply unit 1400 includes a hydrogen supply unit 1410, a nitrogen supply unit 1420, an ammonia (NH 3) supply unit 1430, a silane (SiH 4) supply unit 1440, a trimethylgallium (TMG) supply unit 1450, and trimethyl indium ( TMI) supply unit 1460, Cp2Mg (bis-cyclopentadienyl magnesium) supply unit 1470, and the like.
  • the silane (SiH 4) supply unit 1440 may supply the silane (SiH 4) to the reaction chamber 1100.
  • a supply unit for supplying another n-type doping gas eg, a gas containing Ge, Sn, etc.
  • SiH 4 a gas containing Ge, Sn, etc.
  • the trimethyl indium supply unit 1460 may supply trimethyl indium to the reaction chamber 1100.
  • an embodiment including a supply for supplying other group III gas in addition to trimethyl indium is also possible.
  • a supply unit for supplying trimethyl aluminum (TMA) as a group III gas may be provided.
  • the Cp2Mg supply unit 1470 may supply Cp2Mg (bis-cyclopentadienyl-magnesium) to the reaction chamber 1100.
  • the embodiment also includes a supply for supplying other p-type doping gas (for example, gas containing Zn, Ca, Be, etc.) in addition to the Cp2Mg gas containing magnesium (Mg) as a p-type doping gas It is possible.
  • the power supply unit 1500 may supply power to the reaction chamber 1100 or the buffer chamber 1200.
  • the power supply unit 1500 includes a first power supply unit 1510, a second power supply unit 1520, and a third power supply unit 1530.
  • the reaction chamber 1100 includes a first reaction chamber 1110, a second reaction chamber 1120, and a third reaction chamber 1130 arranged in a row.
  • the reaction chamber is not necessarily limited to three, but may be composed of two to nine or more.
  • the gas supply unit 1400 may form a hydrogen atmosphere or a mixed gas atmosphere of hydrogen and nitrogen inside the first reaction chamber 1110.
  • the foreign material layer such as an oxide layer on the substrate may be removed by controlling the temperature inside the first reaction chamber 1110 to about 1000 to 1200 degrees Celsius by a heater (not shown).
  • a process of growing a GaN buffer layer may be performed.
  • the hydrogen supply atmosphere may be formed inside the first reaction chamber 1110 by the gas supply unit 1400, and trimethylgallium (TMG) and ammonia gas may be introduced.
  • TMG trimethylgallium
  • the substrate or susceptor may be heated by about 450 degrees to about 700 degrees Celsius, and more specifically about 500 to 600 degrees Celsius.
  • the GaN buffer layer may be grown on the upper surface of the substrate heat-treated by this process.
  • the buffer layer may be an AlN layer including an aluminum element and a nitrogen element.
  • the buffer layer may include an AlGaN layer.
  • a process of growing a GaN buffer layer and then growing an undoped GaN layer may be performed.
  • a process of growing an undoped InGaN layer or an undoped AlGaN layer may be performed.
  • the inside of the first reaction chamber 1110 is heated so that the temperature of the substrate is about 1000 degrees to 1200 degrees Celsius, and more specifically, about 1030 degrees to 1080 degrees Celsius so that the undoped GaN layer can grow.
  • the process of growing the buffer layer and the undoped GaN layer on the sapphire substrate can improve the electrical and crystallographic growth efficiency of the GaN thin film.
  • a process of growing an n-type GaN layer may be performed on the undoped GaN layer.
  • the hydrogen supply atmosphere may be formed inside the first reaction chamber 1110 by the gas supply unit 1400, and trimethylgallium (TMG) and ammonia gas may be introduced.
  • TMG trimethylgallium
  • Silane (SiH 4) or Germane (Germane) (GeH 4) may be further added to dope Si or Ge.
  • the substrate or susceptor may be heated to about 1000 ⁇ 1200 degrees Celsius by the heater. By this process, an n-type GaN layer may be grown on the upper surface of the GaN layer.
  • the n-type layer may be a stacked structure of n-GaN / n-AlGaN / n-InGaN.
  • the n-type layer is formed of n-GaN / n-AlGaN, n-GaN / n-AlGaN / n-GaN, n-GaN / n-InGaN / n-AlGaN / n-GaN, or the like. It may be a structure.
  • Each n-type layer may be formed on the substrate by a vapor deposition process in a different reaction chamber.
  • the n-type layer may include an n-AlGaN layer.
  • a process of growing an active layer may be performed.
  • Nitrogen (N2) gas atmosphere may be formed inside the reaction chamber by the gas supply unit 1400.
  • Tri-methyl-gallium (TMG), tri-methyl-indium (TMI) and ammonia gas may be formed. It can be put in.
  • the temperature of the substrate or susceptor can be adjusted by about 700 degrees to 900 degrees Celsius by the heater.
  • the active layer may be a single quantum well (SQW) layer or a multi quantum well (MQW) layer having a plurality of quantum wells. That is, multiple quantum well layers may be formed by alternately stacking a barrier layer and a quantum well layer having different indium (In) and gallium (Ga) contents.
  • a process of growing a p-type GaN layer may be performed.
  • a hydrogen gas atmosphere may be formed inside the reaction chamber by the gas supply unit 1400, and trimethylgallium (TMG), bis-cyclopentadienyl-magnesium (Cp2Mg), and ammonia gas may be introduced.
  • TMG trimethylgallium
  • Cp2Mg bis-cyclopentadienyl-magnesium
  • ammonia gas may be introduced.
  • the temperature of the substrate or susceptor may be adjusted by about 900 to 1200 degrees Celsius by a heater (not shown). By this process, a p-type GaN layer may be grown on the active layer.
  • the p-type GaN layer may have a stacked structure of p-AlGaN / p-GaN, p-AlGaN / p-GaN / p-AlGaN / p-GaN, p-GaN / p-AlGaN / p-GaN.
  • the gas supply unit may supply hydrogen, group III gas (TMA: trimethylaluminium), and group V gas required to form the AlGaN layer.
  • an annealing process may be performed in the third reaction chamber 1130.
  • annealing may be performed on the thin film formed in the previous process by maintaining the temperature inside the reaction chamber at 600 to 900 degrees Celsius.
  • a cooling process may be performed or only the cooling process may be performed without the annealing process.
  • a process of irradiating a low energy electron beam irradiation treatment may be performed instead of the annealing process in the third reaction chamber.
  • an annealing process may be performed in the buffer chamber 1200.
  • the buffer chamber 1200 is connected to the plurality of reaction chambers 1100 and serves as a passage through which the susceptor passes when the susceptor is taken out from one reaction chamber and then brought into the other reaction chamber.
  • the temperature of the buffer chamber 1200 may be adjusted similarly to the temperatures of the first reaction chamber 1110 and the second reaction chamber 1120. That is, before the heat treatment process is performed in the first reaction chamber 1110, the temperature inside the buffer chamber 1200 may be adjusted in advance to about 500 to 1200 degrees Celsius, and more specifically to about 600 to 900 degrees Celsius. Accordingly, the time required to heat the substrate to the temperature required for the heat treatment process can be reduced.
  • the hydrogen supply unit 1410 and the nitrogen supply unit 1420 the inside of the buffer chamber 1200 may be previously adjusted to a hydrogen atmosphere or a nitrogen atmosphere.
  • FIG. 2 is a schematic cross-sectional view A-A 'of the chemical vapor deposition apparatus of FIG.
  • the first actuator 1331 passes through the buffer chamber gate 1213 to pass the first plate 1350a into the buffer chamber 1200.
  • Imported into The robot arm 1340 loads the susceptor S on the first plate 1350a in the buffer chamber.
  • the thermal shock to the substrate is reduced when the substrate is removed from the reaction chamber 1100.
  • the temperature can be adjusted to about 500-1200 degrees in advance.
  • the gas atmosphere inside the buffer chamber 1200 may be adjusted to a hydrogen atmosphere.
  • the lift part 1119 provided in the rotating part 1112 is raised to lift the susceptor loaded on the upper part of the rotating part 1112.
  • the first plate 1350a is carried into the first reaction chamber 1110 and is positioned between the rotating part 1112 and the susceptor S.
  • the lift unit 1119 descends, the susceptor S is loaded on the first plate 1350a, and the first plate is carried out to the buffer chamber 1200.
  • the first plate 1350a passes through the first reaction chamber gate 1115 and is buffered from the first reaction chamber 1110. It may be transferred to the chamber 1200.
  • the lift unit 1380 on the upper surface of the pedestal 1351 may be raised so that the robot arm 1340 may hold the susceptor S transferred to the buffer chamber 1200 (see FIG. 1).
  • the robot arm 1340 grips the susceptor S.
  • the susceptor is mounted on the second plate 1350b positioned in front of the second reaction chamber gate 1125.
  • FIG. 3 is a schematic plan view of a second embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment.
  • the description overlapping with the first embodiment of FIG. 1 will be omitted.
  • the second embodiment includes three reaction chambers, and the manner of conveying the susceptor is different from that of the first embodiment.
  • the actuator unit 2330 includes an actuator 2331, an actuator transfer motor 2332, and an actuator transfer rail 2333.
  • the actuator 2331 is slidably coupled to the actuator transfer rail 2333, and the actuator 2331 is slidable along the actuator transfer rail 2333 by the actuator transfer motor 2332.
  • the actuator transfer motor 2332 is positioned so that the susceptor S is located in front of the second reaction chamber. Move the actuator 2331.
  • the actuator 2331 moves, the susceptor S is transferred in a state located inside the buffer chamber 2200. Accordingly, the substrate may be loaded into each reaction chamber 2100 or the buffer chamber 2200 using only one actuator.
  • FIG. 4 is a schematic plan view of a third embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment. The description overlapping with the first and second embodiments is omitted.
  • the third embodiment includes four reaction chambers, and the manner of conveying the susceptor is different from that of the first and second embodiments.
  • the transfer apparatus includes a first robot arm 3706, a first robot arm transfer rail 3705, a second robot arm 3708, a second robot arm transfer rail 3707, and a first plate.
  • Reference numeral 3702a may include a second plate 3702b, a third plate 3702c, a fourth plate 3702d, and a roller portion 3701.
  • the second robot arm 3708 may receive the unprocessed substrate W from the substrate supply unit 3801, pick up the substrate, and load the substrate on the susceptor.
  • the second robot arm 3708 is coupled to the second robot arm transfer rail 3707 to be slidably movable.
  • the second robot arm 3708 may access the susceptor placed in the susceptor carrying part 3803, pick up the processed substrate, and transfer the processed substrate to the substrate carrying part 3804.
  • the roller part 3701 is provided inside the buffer chamber 3200 and is rotatable in place so that the first plate 3702a may be conveyed to the first reaction chamber.
  • the roller portion 3701 includes one or a plurality of rotatable rollers. The roller and the plate may be coupled to each other by a gear provided to transfer the plate.
  • FIG. 5 is a schematic plan view of a fourth embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment.
  • the description overlapping with the first to third embodiments is omitted.
  • the fourth embodiment includes four reaction chambers, and the manner of conveying the susceptor is different from that of the first to third embodiments.
  • the transfer apparatus includes a substrate supply / discharge apparatus 4310, a first pickup apparatus 4320, a first actuator 4331, a second actuator 4332, a third actuator 4333, and a third actuator 4 actuator 4340, first plate 4350a, second plate 4350b, third plate 4350c, fourth plate 4350d, first robot arm 4340, second robot arm 4360a, A third robot arm 4360b, a fourth robot arm 4360c, and a second pickup device 4370 may be included.
  • the second robot arm 4360a may transport the susceptor mounted on the upper surface of the first plate 4350a to the upper surface of the second plate 4350b inside the buffer chamber 4200.
  • the lower portion of each plate is provided with a lift portion 4380 for lifting the substrate or susceptor. Therefore, when the lift unit 4380 raises the susceptor loaded on the upper surface of the first plate 4350a, the second robot arm 4360a may enter between the susceptor and the first plate 4350a. Next, when the lift part 4380 lowers the susceptor, the susceptor is loaded on the upper surface of the second robot arm 4360a.
  • the third robot arm 4360b may transport the susceptor mounted on the upper surface of the second plate 4350b to the upper surface of the third plate 4350c inside the buffer chamber 4200.
  • the second robot arm 4360a to the fourth robot arm 4360c are preferably made of a heat resistant material to operate stably at a temperature of about 1000 degrees Celsius.
  • the buffer chamber 4200 is provided with a first buffer chamber gate 4213, a first buffer chamber gate valve 4214, a second buffer chamber gate 4223, and a second buffer chamber gate valve 4224.
  • FIG. 6 is a schematic plan view of a fifth embodiment of a chemical vapor deposition apparatus for performing a substrate processing method according to the present embodiment.
  • the fifth embodiment includes six reaction chambers, and the manner of conveying the susceptor is different from that of the first to fourth embodiments.
  • the transfer apparatus includes a substrate supply / discharge apparatus 5310, a first pickup apparatus 5320, an actuator 5330, a plurality of plates 5340, and a second pickup apparatus 5260.
  • Actuator 5330 includes first to sixth actuators 5331, 5332, 5333, 5334, 5335, and 5336.
  • the plate 5340 is detachable from the actuator 5330, and when the plate 5340 is loaded on the plate carrying part 5350 and then separated from the actuator 5330, the plate 5340 and the plate 5340 are separated from the actuator 5330.
  • the susceptor S is transferred horizontally to the other reaction chamber.
  • the plate carrier 5350 may be a conveyor belt or similar device.
  • a coupling device (not shown) is provided at the rod end of the actuator 5330 so that the plate 5340 and the actuator 5330 are coupled or separated. Therefore, when the process is completed in any one reaction chamber and the plate is taken out, a control signal is transmitted to the coupling device to separate the plate 5340 and the actuator 5330.
  • the thin film to be formed by this method is composed of a buffer layer / undoped GaN layer / n-type GaN layer / n-type AlGaN layer / active layer / p-type AlGaN layer / p-type GaN layer.
  • a type of processes that may be performed in each reaction chamber may be modified, and a plurality of processes may be performed in any one reaction chamber.
  • the step S103 of carrying out the substrate from the first reaction chamber to the buffer chamber and carrying it into the second reaction chamber is performed.
  • the buffer chamber is heated to a predetermined temperature in advance so that a sudden temperature change does not occur with respect to the substrate.
  • a step (S104) of forming a buffer layer on the substrate in the second reaction chamber is performed. That is, hydrogen, trimethylgallium (TMG) and ammonia gas are introduced into the second reaction chamber, and the substrate or susceptor is heated to a predetermined temperature (for example, about 600 degrees). By this process, the GaN buffer layer may be grown on the heat treated substrate.
  • TMG trimethylgallium
  • step (S105) of carrying out the substrate from the second reaction chamber to the buffer chamber and carrying it into the third reaction chamber is performed.
  • step S106 an undoped GaN layer is formed on the substrate in the third reaction chamber.
  • Hydrogen (H 2), trimethylgallium (TMG), ammonia (NH 3) are injected into the third reaction chamber, and the substrate or susceptor may be heated to, for example, 1200 degrees.
  • H 2 Hydrogen
  • TMG trimethylgallium
  • NH 3 ammonia
  • step S107 of carrying out the substrate from the third reaction chamber to the buffer chamber and carrying it into the fourth reaction chamber is performed.
  • step S108 an n-type GaN layer is formed on the substrate in the fourth reaction chamber. That is, hydrogen (H 2), trimethylgallium (TMG), ammonia (NH 3), and SiH 4 are injected into the fourth reaction chamber, and the substrate or susceptor is heated at, for example, 1200 degrees. By this process, an n-type GaN layer (Si doping) is grown on the undoped GaN layer.
  • the buffer chamber may be heated to a predetermined temperature so that a sudden temperature change does not occur with respect to the substrate.
  • the heating temperature may be set between approximately 500 to 1200 degrees Celsius, and in some cases, may be set to about 700 degrees.
  • step S110 an n-type AlGaN layer is formed on the substrate in the fifth reaction chamber.
  • SiH 4, trimethylaluminum, trimethylgallium, ammonia and hydrogen may be supplied into the fifth reaction chamber to form a si-doped AlGaN layer.
  • step S111 of carrying out the substrate from the fifth reaction chamber to the buffer chamber and carrying it into the sixth reaction chamber is performed.
  • N 2 nitrogen
  • TMG trimethylgallium
  • TMI trimethyl indium
  • NH 3 ammonia
  • step S113 of carrying out the substrate from the sixth reaction chamber to the buffer chamber and carrying it into the seventh reaction chamber is performed.
  • Mp-doped AlGaN layer is formed on the substrate in the seventh reaction chamber. That is, Mp-doped AlGaN layer may be formed by supplying Cp 2 Mg, trimethylaluminum, trimethylgallium, ammonia, and hydrogen.
  • step S115 of carrying out the substrate from the seventh reaction chamber to the buffer chamber and carrying it into the eighth reaction chamber is performed.
  • a p-type GaN layer on the substrate in the eighth reaction chamber (S116) is performed.
  • Cp 2 Mg, trimethylgallium, ammonia and hydrogen are injected into the eighth reaction chamber, and the substrate or susceptor is variably controlled at about 1200 degrees.
  • the Mg-doped GaN layer may be grown on the active layer.
  • Cp2Mg as the p-type doping gas
  • a cleaning operation is necessary because the magnesium component may be attached inside the reaction chamber, and such magnesium component may adversely affect other processes. While the eighth reaction chamber is cleaned, each process may proceed without interruption in the remaining reaction chambers.
  • step S118 of performing annealing in the ninth reaction chamber is performed. That is, the interior of the chamber is adjusted to 600-900 degrees Celsius while maintaining a nitrogen atmosphere.
  • a cooling process may be performed after annealing in the ninth reaction chamber, and a cooling process may be performed without annealing in the ninth reaction chamber.
  • the cooling process may be performed in the buffer chamber.
  • the cooling process may be, for example, a process of naturally cooling the substrate to about 100 to 300 degrees.
  • the susceptor is carried out to the outside, and the substrate on the upper surface of the susceptor is picked up by the pickup device and transferred to the substrate supply and discharge device.
  • the thin film to be formed by this method consists of a buffer layer / n-type GaN layer / active layer / p-type GaN layer.
  • step S206 the n-type GaN layer is formed in the third reaction chamber, and the substrate is carried out from the third reaction chamber to the buffer chamber and then loaded into the fourth reaction chamber (S207).
  • reaction chambers are included.
  • a chemical vapor device can be used. That is, forming the buffer layer and forming the undoped GaN layer may be performed in the second reaction chamber.
  • the forming of the n-type GaN layer and the forming of the n-type AlGaN layer may be performed in the third reaction chamber.
  • the forming of the p-type AlGaN layer and the forming of the p-type GaN layer may be performed in the fifth reaction chamber.
  • FIG. 9 is a flow chart of a substrate processing method using a chemical vapor deposition apparatus including three reaction chambers.
  • the thin film to be formed by this method consists of a buffer layer / n-type GaN layer / active layer / p-type GaN layer.
  • a step (S301) of carrying a substrate into the first reaction chamber and a step (S302) of heat treating the substrate in the first reaction chamber are performed.
  • the step S303 of carrying out the substrate from the first reaction chamber to the buffer chamber and carrying it into the second reaction chamber is performed.
  • forming a buffer layer on the substrate in the second reaction chamber (S304), forming an n-type GaN layer (S305), and forming an active layer (S306) are performed.
  • the substrate is carried out from the second reaction chamber to the buffer chamber and loaded into the third reaction chamber.
  • heat treating the substrate and forming the buffer layer may be performed in different reaction chambers. This process separation reduces the time required to adjust the temperature inside the reaction chamber to the process temperature required, and also prevents the problem that the gas used in the previous process affects the next process.

Abstract

L'invention concerne un procédé de traitement de substrat nécessaire dans un processus de formation de couche mince sur un substrat pour améliorer l'efficacité du processus et former une couche mince de haute qualité. Le procédé selon l'invention consiste : à former une couche de type n contenant un élément du groupe III et un élément du groupe V sur un substrat, dans la première chambre, par un processus de dépôt en phase vapeur ; à transporter le substrat de la première chambre à une chambre tampon, puis à la deuxième chambre qui est différente de la première ; et à former une couche active contenant un élément du groupe III et un élément du groupe V sur un substrat, dans la deuxième chambre, par un processus de dépôt en phase vapeur.
PCT/KR2010/004663 2009-12-14 2010-07-16 Procédé de traitement de substrat Ceased WO2011074755A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2010800638633A CN102804413A (zh) 2009-12-14 2010-07-16 衬底处理方法

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
KR1020090124224A KR101062463B1 (ko) 2009-12-14 2009-12-14 금속유기물 화학기상증착장치 및 이를 이용한 금속유기물 화학기상증착방법
KR10-2009-0124224 2009-12-14
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CN103074616A (zh) * 2012-12-26 2013-05-01 光达光电设备科技（嘉兴）有限公司 在衬底上沉积多层材料层的方法及化学气相沉积设备
CN103276369B (zh) * 2013-05-06 2016-02-17 南方科技大学 一种pecvd镀膜系统

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