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WO2011070805A1 - Processus de production d'un dispositif de conversion photoélectrique - Google Patents

Processus de production d'un dispositif de conversion photoélectrique Download PDF

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Publication number
WO2011070805A1
WO2011070805A1 PCT/JP2010/057784 JP2010057784W WO2011070805A1 WO 2011070805 A1 WO2011070805 A1 WO 2011070805A1 JP 2010057784 W JP2010057784 W JP 2010057784W WO 2011070805 A1 WO2011070805 A1 WO 2011070805A1
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Prior art keywords
layer
photoelectric conversion
concentration
film
raman ratio
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English (en)
Japanese (ja)
Inventor
弘臣 宮原
真之 呉屋
智嗣 坂井
立享 西宮
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Mitsubishi Heavy Industries Ltd
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Mitsubishi Heavy Industries Ltd
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Priority to CN2010800341453A priority Critical patent/CN102473757A/zh
Priority to US13/388,297 priority patent/US8507312B2/en
Publication of WO2011070805A1 publication Critical patent/WO2011070805A1/fr
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1224—The active layers comprising only Group IV materials comprising microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a method for manufacturing a photoelectric conversion device, and more particularly to a method for manufacturing a thin film solar cell in which a power generation layer is formed by film formation.
  • a thin film silicon solar cell including a photoelectric conversion layer formed by a method or the like is known.
  • the advantages of the thin film silicon solar cell include that the area can be easily increased, the film thickness is as thin as about 1/100 that of the crystalline solar cell, and the material can be reduced. It is done. For this reason, the thin film silicon solar cell can be manufactured at a lower cost than the crystalline solar cell.
  • a film mainly composed of amorphous silicon or a film mainly composed of crystalline silicon is generally used for a photoelectric conversion layer used in a thin film silicon solar cell.
  • impurities oxygen and nitrogen
  • Patent Document 1 discloses that in a solar battery cell including a film mainly composed of crystalline silicon as a photoelectric conversion layer, there is a correlation between the Raman ratio (crystallization rate) of the crystalline silicon film and the cell efficiency. ing.
  • JP 2008-66343 A paragraphs [0037] to [0038], FIGS. 7 to 8)
  • An object of the present invention is to obtain a highly efficient photoelectric conversion device including a crystalline silicon i layer in a photoelectric conversion layer.
  • the present invention provides a method for manufacturing a photoelectric conversion device including a step of forming a photoelectric conversion layer including an i layer mainly composed of crystalline silicon on a substrate, According to the Raman ratio, an upper limit value of the impurity concentration in the i layer is determined, and a method for manufacturing a photoelectric conversion device for forming the i layer below the upper limit value of the determined impurity concentration is provided.
  • the battery performance of the photoelectric conversion device including the crystalline silicon i layer is more susceptible to the impurity concentration in the film as the Raman ratio is higher, and the conversion efficiency due to the increase in the impurity concentration in the film.
  • the decrease was found to be significant. From the above knowledge, it can be said that the allowable amount of the impurity concentration contained in the crystalline silicon i layer varies depending on the Raman ratio of the crystalline silicon i layer.
  • photoelectric conversion having excellent battery performance is achieved by forming the film while controlling the impurity concentration in the crystalline silicon i layer so as not to exceed the upper limit value of the impurity concentration determined according to the Raman ratio.
  • the device can be manufactured.
  • the Raman ratio in the present invention is the peak intensity lc of the crystalline silicon phase of 520 cm ⁇ 1 with respect to the peak intensity la of the amorphous silicon phase of 480 cm ⁇ 1 in the Raman spectrum measured using a laser beam having a wavelength of 532 nm. It is defined by the ratio lc / la.
  • the upper limit of the impurity concentration is 5 ⁇ 10 18 cm ⁇ 3 when the Raman ratio is in the range of 3.5 to 4.5, and the Raman ratio is 4.5 to 5.5.
  • 2 ⁇ 10 18 cm ⁇ 3 when the range is within the range 8 ⁇ 10 17 cm ⁇ 3 when the Raman ratio is within the range of 5.5 to 6.5, and the Raman ratio is 6.5 to 7.5
  • it is preferably 7 ⁇ 10 17 cm ⁇ 3 .
  • a highly efficient photoelectric conversion device can be produced by controlling the impurity concentration in the crystalline silicon i layer below the upper limit value according to the desired Raman ratio.
  • the present invention is a method for manufacturing a photoelectric conversion device comprising a step of forming a photoelectric conversion layer comprising an i layer mainly composed of crystalline silicon on a substrate, and depending on the Raman ratio of the i layer,
  • a method of manufacturing a photoelectric conversion device for determining an upper limit value of the concentration of an impurity gas in a film forming atmosphere and forming the i layer by controlling the concentration of the impurity gas so as to be equal to or less than the determined upper limit value I will provide a.
  • the concentration of the impurity gas in the film formation By controlling the concentration of the impurity gas in the film formation, the concentration of impurities contained in the crystalline silicon i layer can be controlled. For this reason, it is possible to stably produce a photoelectric conversion device that maintains high battery performance.
  • the upper limit value of the impurity gas concentration is 10 ppm when the Raman ratio is in the range of 3.5 to 4.5, and the Raman ratio is in the range of 4.5 to 5.5. 8 ppm, 2 ppm when the Raman ratio is within the range of 5.5 to 6.5, 1.5 ppm when the Raman ratio is within the range of 6.5 to 7.5, and the Raman ratio is 7.5 or more In this case, it is preferably 2 ppm.
  • a highly efficient photoelectric conversion device can be produced by controlling the impurity concentration in the i-layer film-forming atmosphere to be equal to or lower than the upper limit value according to the desired Raman ratio.
  • the film can be formed while controlling the impurity concentration in the film or in the film forming atmosphere according to the Raman ratio of the crystalline silicon i-layer film. can do.
  • FIG. 1 is a schematic diagram showing the configuration of the photoelectric conversion device of the present invention.
  • the photoelectric conversion device 100 is a tandem silicon solar cell, and includes a substrate 1, a transparent electrode layer 2, a first cell layer 91 (amorphous silicon system) and a second cell layer 92 ( Crystalline silicon), intermediate contact layer 5 and back electrode layer 4.
  • the silicon-based is a generic name including silicon (Si), silicon carbide (SiC), and silicon germanium (SiGe).
  • the crystalline silicon system means a silicon system other than the amorphous silicon system, and includes microcrystalline silicon and polycrystalline silicon.
  • a method for manufacturing a photoelectric conversion device according to the first embodiment will be described by taking a process for manufacturing a solar cell panel as an example.
  • 2 to 5 are schematic views showing a method for manufacturing the solar cell panel of the present embodiment.
  • FIG. 2 (a) A soda float glass substrate (for example, 1.4 m ⁇ 1.1 m ⁇ plate thickness: 3.5 mm to 4.5 mm) is used as the substrate 1.
  • the end face of the substrate is preferably subjected to corner chamfering or R chamfering to prevent damage due to thermal stress or impact.
  • FIG. 2 (b) As the transparent electrode layer 2, a transparent conductive film having a thickness of about 500 nm to 800 nm and having tin oxide (SnO 2 ) as a main component is formed at about 500 ° C. with a thermal CVD apparatus. At this time, a texture with appropriate irregularities is formed on the surface of the transparent electrode film.
  • an alkali barrier film (not shown) may be formed between the substrate 1 and the transparent electrode film in addition to the transparent electrode film.
  • a silicon oxide film (SiO 2 ) is formed at a temperature of about 500 ° C. with a thermal CVD apparatus at 50 nm to 150 nm.
  • FIG. 2 (c) Thereafter, the substrate 1 is set on an XY table, and the first harmonic (1064 nm) of the YAG laser is irradiated from the film surface side of the transparent electrode film as indicated by an arrow in the figure.
  • the laser power is adjusted to be appropriate for the processing speed, and the transparent electrode film is moved relative to the direction perpendicular to the series connection direction of the power generation cells so that the substrate 1 and the laser light are moved relative to each other to form the groove 10.
  • FIG. 2 (d) As the first cell layer 91, a p layer, an i layer, and an n layer made of an amorphous silicon thin film are formed by a plasma CVD apparatus. Using SiH 4 gas and H 2 gas as main raw materials, the amorphous silicon p layer 31 from the side on which sunlight is incident on the transparent electrode layer 2 at a reduced pressure atmosphere: 30 Pa to 1000 Pa and a substrate temperature: about 200 ° C. Then, an amorphous silicon i layer 32 and an amorphous silicon n layer 33 are formed in this order.
  • the amorphous silicon p layer 31 is mainly made of amorphous B-doped silicon and has a thickness of 10 nm to 30 nm.
  • the amorphous silicon i layer 32 has a thickness of 200 nm to 350 nm.
  • the amorphous silicon n layer 33 is mainly P-doped silicon containing microcrystalline silicon in amorphous silicon, and has a thickness of 30 nm to 50 nm.
  • a buffer layer may be provided between the amorphous silicon p layer 31 and the amorphous silicon i layer 32 in order to improve interface characteristics.
  • a crystalline material as the second cell layer 92 is formed on the first cell layer 91 by a plasma CVD apparatus at a reduced pressure atmosphere: 3000 Pa or less, a substrate temperature: about 200 ° C., and a plasma generation frequency: 40 MHz or more and 100 MHz or less.
  • a silicon p layer 41, a crystalline silicon i layer 42, and a crystalline silicon n layer 43 are sequentially formed.
  • the crystalline silicon p layer 41 is mainly made of B-doped microcrystalline silicon and has a thickness of 10 nm to 50 nm.
  • the crystalline silicon i layer 42 is mainly made of microcrystalline silicon and has a film thickness of 1.2 ⁇ m or more and 3.0 ⁇ m or less.
  • the crystalline silicon n layer 43 is mainly made of P-doped microcrystalline silicon and has a thickness of 20 nm to 50 nm.
  • the distance d between the plasma discharge electrode and the surface of the substrate 1 is preferably 3 mm or more and 10 mm or less. If it is smaller than 3 mm, it is difficult to keep the distance d constant from the accuracy of each component device in the film forming chamber corresponding to the large substrate, and there is a possibility that the discharge becomes unstable because it is too close. When it is larger than 10 mm, it is difficult to obtain a sufficient film forming speed (1 nm / s or more), and the uniformity of the plasma is lowered and the film quality is lowered by ion bombardment.
  • the impurity concentration in the film is controlled to be equal to or lower than the upper limit value determined based on the Raman ratio of the crystalline silicon i layer.
  • Nitrogen, oxygen, phosphorus, antimony, and arsenic are examples of impurities that are mixed into the crystalline silicon i layer during film formation and affect the battery performance.
  • FIG. 6 is a graph showing the relationship between the nitrogen atom concentration in the i layer and the cell efficiency for a single solar cell including a crystalline silicon i layer having various Raman ratios.
  • the horizontal axis represents the nitrogen atom concentration
  • the vertical axis represents the cell efficiency.
  • FIG. 7 is a graph showing the influence of the Raman ratio of the i layer and the nitrogen atom concentration on the cell efficiency.
  • the abscissa indicates the Raman ratio
  • the ordinate indicates the crystalline silicon i layer with 1 ⁇ 10 19 cm ⁇ 3 relative to the efficiency of the cell having the crystalline silicon i layer with a nitrogen atom concentration of 7 ⁇ 10 17 cm ⁇ 3.
  • the ratio of the efficiency of cells having As shown in FIGS.
  • the activation energy is 0.3 to 0.5 eV for the crystalline silicon i layer and 0.7 to 0.9 eV for the amorphous silicon i layer. From this, it is considered that crystalline (microcrystalline) silicon and amorphous silicon have different bonding states, and crystalline (microcrystalline) silicon is more likely to be activated by impurities.
  • FIG. 8 is a distribution diagram of the cell efficiency with respect to the nitrogen atom concentration in the crystalline silicon i layer and the Raman ratio of the crystalline silicon i layer prepared based on FIG.
  • the horizontal axis represents the nitrogen atom concentration
  • the vertical axis represents the Raman ratio.
  • an approximate straight line was created for the plot of each Raman ratio range in FIG. 6, and the nitrogen atom concentration and cell efficiency at each Raman ratio were determined from the approximate straight line.
  • the upper limit value of the nitrogen atom concentration in the crystalline silicon i layer is determined in consideration of the following preconditions. (1) Raman ratio is 3.5 or more (to make microcrystalline silicon), (2) Cell efficiency is 7.5% or more (to maintain sufficient performance as a product).
  • Raman ratio is 3.5 or more (to make microcrystalline silicon)
  • Cell efficiency is 7.5% or more (to maintain sufficient performance as a product).
  • the area where the cell efficiency of 7.5% or more can be achieved is shown by shading.
  • the upper limit of the nitrogen atom concentration in the film that can achieve a cell efficiency of 7.5% or more in a predetermined Raman ratio range is shown in Table 1. That is, it is possible to obtain a highly efficient photoelectric conversion device by controlling the nitrogen atom concentration in the crystalline silicon i layer to a value equal to or lower than the upper limit value shown in Table 1 according to the desired Raman ratio. From Table 1, it was shown that the nitrogen atom concentration needs to be controlled lower in order to obtain a high-performance solar cell as the Raman ratio increases.
  • the values of the Raman ratio range shown in Table 1 may be set as appropriate according to the control accuracy of the Raman ratio required in production.
  • Examples of a method for controlling the nitrogen atom concentration in the crystalline silicon i layer include a method for controlling and forming a film while monitoring the nitrogen gas concentration in the film forming gas.
  • a gas purifier is installed between the raw material gas cylinder and the film forming chamber to reduce the nitrogen gas concentration in the supply raw material gas, or the raw material gas is set to a liquid oxygen temperature or lower.
  • the source gas cylinder may be replaced with one having a low nitrogen concentration.
  • the impurity is oxygen, it can be controlled while monitoring the oxygen gas concentration in the film forming gas in the same manner as nitrogen.
  • An intermediate contact layer 5 serving as a semi-reflective film is provided between the first cell layer 91 and the second cell layer 92 in order to improve the contact property and obtain current matching.
  • a GZO (Ga-doped ZnO) film having a thickness of 20 nm or more and 100 nm or less is formed by a sputtering apparatus using a target: Ga-doped ZnO sintered body. Further, the intermediate contact layer 5 may not be provided.
  • FIG. 2 (e) The substrate 1 is placed on an XY table, and the second harmonic (532 nm) of the laser diode-pumped YAG laser is irradiated from the film surface side of the photoelectric conversion layer 3 as shown by the arrow in the figure.
  • Pulse oscillation 10 kHz to 20 kHz
  • laser power is adjusted so as to be suitable for the processing speed
  • laser etching is performed so that grooves 11 are formed on the lateral side of the laser etching line of the transparent electrode layer 2 from about 100 ⁇ m to 150 ⁇ m.
  • this laser may be irradiated from the substrate 1 side.
  • the photoelectric conversion layer is formed by utilizing a high vapor pressure generated by the energy absorbed in the amorphous silicon-based first cell layer of the photoelectric conversion layer 3. Since 3 can be etched, a more stable laser etching process can be performed. The position of the laser etching line is selected in consideration of positioning tolerances so as not to intersect with the etching line in the previous process.
  • FIG. 3 An Ag film / Ti film is formed as the back electrode layer 4 by a sputtering apparatus at a reduced pressure atmosphere and at a film forming temperature of 150 ° C. to 200 ° C.
  • an Ag film 150 nm or more and 500 nm or less
  • a Ti film having a high anticorrosion effect 10 nm or more and 20 nm or less are stacked in this order to protect them.
  • the back electrode layer 4 may have a laminated structure of an Ag film having a thickness of 25 nm to 100 nm and an Al film having a thickness of 15 nm to 500 nm.
  • a film thickness of 50 nm or more and 100 nm or less is formed between the photoelectric conversion layer 3 and the back electrode layer 4 by a sputtering apparatus.
  • a GZO (Ga-doped ZnO) film may be formed and provided.
  • FIG. 3 (b) The substrate 1 is placed on an XY table, and the second harmonic (532 nm) of the laser diode-pumped YAG laser is irradiated from the substrate 1 side as indicated by the arrow in the figure.
  • the laser light is absorbed by the photoelectric conversion layer 3, and the back electrode layer 4 is exploded and removed using the high gas vapor pressure generated at this time.
  • Pulse oscillation laser power is adjusted so as to be suitable for the processing speed from 1 kHz to 10 kHz, and laser etching is performed so that grooves 12 are formed on the lateral side of the laser etching line of the transparent electrode layer 2 from 250 ⁇ m to 400 ⁇ m. .
  • FIG. 3 (c) and FIG. 4 (a) The power generation region is divided, and the film edge around the substrate edge is laser-etched to eliminate the effect of short circuit at the serial connection portion.
  • the substrate 1 is set on an XY table, and the second harmonic (532 nm) of the laser diode pumped YAG laser is irradiated from the substrate 1 side.
  • the laser light is absorbed by the transparent electrode layer 2 and the photoelectric conversion layer 3, and the back electrode layer 4 explodes using the high gas vapor pressure generated at this time, and the back electrode layer 4 / photoelectric conversion layer 3 / transparent electrode layer 2 is removed.
  • Pulse oscillation 1 kHz or more and 10 kHz or less
  • the laser power is adjusted so as to be suitable for the processing speed, and the position of 5 mm to 20 mm from the end of the substrate 1 is placed in the X-direction insulating groove as shown in FIG.
  • Laser etching is performed to form 15.
  • FIG.3 (c) since it becomes X direction sectional drawing cut
  • the insulating groove formed to represent the Y-direction cross section at the position will be described as the X-direction insulating groove 15.
  • the Y-direction insulating groove does not need to be provided because the film surface polishing removal processing of the peripheral film removal region of the substrate 1 is performed in a later process.
  • the insulating groove 15 exhibits an effective effect in suppressing external moisture intrusion into the solar cell module 6 from the end portion of the solar cell panel by terminating the etching at a position of 5 mm to 15 mm from the end of the substrate 1. Therefore, it is preferable.
  • the laser beam in the above steps is a YAG laser
  • a YVO4 laser or a fiber laser there are some that can use a YVO4 laser or a fiber laser in the same manner.
  • FIG. 4 (a: view from the solar cell film side, b: view from the substrate side of the light receiving surface) Since the laminated film around the substrate 1 (peripheral film removal region 14) has a step and is easy to peel off in order to ensure a sound adhesion / seal surface with the back sheet 24 via EVA or the like in a later process, The film is removed to form a peripheral film removal region 14. When removing the film over the entire periphery of the substrate 1 at 5 to 20 mm from the end of the substrate 1, the X direction is closer to the substrate end than the insulating groove 15 provided in the step of FIG.
  • the back electrode layer 4 / photoelectric conversion layer 3 / transparent electrode layer 2 are removed by using grinding stone polishing, blast polishing, or the like on the substrate end side with respect to the groove 10 near the side portion. Polishing debris and abrasive grains were removed by cleaning the substrate 1.
  • FIGS. 5 (a) and 5 (b) An attachment portion of the terminal box 23 is provided with an opening through window in the back sheet 24 to take out the current collector plate. Insulating materials are installed in a plurality of layers in the opening through window portion to suppress intrusion of moisture and the like from the outside. Processing so that power can be taken out from the terminal box 23 on the back side of the solar battery panel by collecting copper foil from one end of the photovoltaic power generation cells arranged in series and the other end of the solar power generation cell. To do. In order to prevent a short circuit with each part, the copper foil arranges an insulating sheet wider than the copper foil width.
  • an adhesive filler sheet made of EVA (ethylene vinyl acetate copolymer) or the like is disposed so as to cover the entire solar cell module 6 and not protrude from the substrate 1.
  • a back sheet 24 having a high waterproof effect is installed on the EVA.
  • the back sheet 24 has a three-layer structure of PET sheet / Al foil / PET sheet so that the waterproof and moisture-proof effect is high.
  • the one with the back sheet 24 arranged in a predetermined position is deaerated inside in a reduced pressure atmosphere by a laminator and pressed at about 150 to 160 ° C., and EVA is crosslinked and brought into close contact.
  • FIG. 5 (a) The terminal box 23 is attached to the back side of the solar cell module 6 with an adhesive.
  • FIG. 5 (b) The copper foil and the output cable of the terminal box 23 are connected by solder or the like, and the inside of the terminal box 23 is filled with a sealing agent (potting agent) and sealed. Thus, the solar cell panel 50 is completed.
  • FIG. 5 (c) A power generation inspection and a predetermined performance test are performed on the solar cell panel 50 formed in the steps up to FIG. The power generation inspection is performed using a solar simulator of AM1.5 and solar radiation standard sunlight (1000 W / m 2 ).
  • FIG. 5 (d) Before and after the power generation inspection (FIG. 5C), a predetermined performance inspection is performed including an appearance inspection.
  • the concentration of the impurity gas in the film forming atmosphere is controlled when the crystalline silicon i layer 42 is formed.
  • Impurity gases in the film forming atmosphere include nitrogen gas and oxygen gas contained in SiH 4 gas and H 2 gas, and PH 3 which is an n-layer source gas remaining in the film forming chamber.
  • FIG. 9 shows the relationship between the nitrogen gas concentration in the film forming atmosphere and the nitrogen atom concentration in the crystalline silicon i layer.
  • the nitrogen gas concentration and the nitrogen atom concentration in the film are in a linear relationship.
  • the nitrogen atom concentration in the film shown in FIG. 6 is converted into the nitrogen gas concentration in the film forming atmosphere using the correspondence relationship in FIG. 9, and the distribution chart of the cell efficiency with respect to the nitrogen gas concentration and the Raman ratio in the film forming atmosphere is shown. can get.
  • the horizontal axis represents the nitrogen gas concentration
  • the vertical axis represents the Raman ratio.
  • the upper limit value of the nitrogen gas concentration in the film forming atmosphere is determined in consideration of the same preconditions as in the first embodiment.
  • the area where the cell efficiency of 7.5% or more can be achieved is indicated by shading.
  • Table 2 shows the upper limit of the nitrogen gas concentration that can achieve a cell efficiency of 7.5% or more in a predetermined Raman ratio range. That is, a highly efficient photoelectric conversion device can be obtained by controlling the nitrogen gas concentration in the film forming atmosphere to be equal to or lower than the upper limit value shown in Table 2 according to the desired Raman ratio. From Table 2, it can be seen that the higher the Raman ratio, the lower the nitrogen gas concentration needs to be controlled.
  • the values of the Raman ratio range shown in Table 2 may be appropriately set according to the control accuracy of the Raman ratio required in production.
  • FIG. 11 shows the relationship between the nitrogen gas concentration in the crystalline silicon i-layer film formation and the module output for the tandem solar cell module including the crystalline silicon i layer formed by controlling the nitrogen gas concentration in the atmosphere.
  • the horizontal axis represents the nitrogen gas concentration
  • the vertical axis represents the relative value of the module output based on the nitrogen gas concentration of 2 ppm.
  • the film forming conditions other than the nitrogen gas concentration were the same.
  • the Raman ratio of the crystalline silicon i layer has a distribution in the range of 4 to 10 in the plane, and the average value is 6.5.
  • the output decreased as the nitrogen gas concentration increased. Under the condition of an in-plane average Raman ratio of 6.5, a high output can be secured by controlling the nitrogen gas concentration in the film forming atmosphere to 2 ppm or less.
  • the nitrogen (impurity) gas concentration in the film forming atmosphere is measured by gas chromatography or the like.
  • the nitrogen gas concentration is determined by a method of reducing the nitrogen gas concentration in the feed gas using a gas purifier, a method of changing the nitrogen partial pressure by setting the source gas to a liquid oxygen temperature or lower, and a source gas cylinder. Is controlled to be equal to or less than the above upper limit value by a method of exchanging for a low nitrogen concentration.
  • control is performed while monitoring the oxygen gas concentration in the film forming gas in the same manner as nitrogen.
  • an image of the surface of the deposited crystalline silicon i layer is obtained online, and a method for determining the presence or absence of a white-looking region (referred to as a high-intensity reflective region) or from the glass substrate side
  • the Raman ratio of the crystalline silicon i layer can be estimated by a method of measuring the reflected light online by entering infrared light. Alternatively, the Raman ratio of the crystalline silicon i layer may be directly measured.
  • tandem solar cell has been described as a solar cell, but the present invention is not limited to this example.
  • the present invention can be similarly applied to other types of thin film solar cells including a crystalline silicon i layer such as a single solar cell and a triple solar cell.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un dispositif de conversion photoélectrique à fort rendement comportant une couche de type i de silicium cristallin formée dans une couche de conversion photoélectrique. Elle concerne aussi un processus de production d'un dispositif de conversion photoélectrique (100) dont une étape consiste à former, sur un substrat (1), une couche de conversion photoélectrique (3) qui contient une couche de type i (42) principalement composée de silicium. Dans le processus, la limite supérieure de la concentration d'une impureté dans la couche de type i (42) est déterminée en fonction du rapport de Raman de la couche de type i (42) et la couche de type i (42) dont la concentration d'impureté est égale ou inférieure à la limite supérieure déterminée est formée. En variante, la limite supérieure de la concentration en un gaz d'impureté dans l'atmosphère de formation de pellicule est déterminée en fonction du rapport de Raman de la couche de type i (42), et la couche de type i (42) est formée tandis que l'on contrôle la concentration du gaz d'impureté de telle manière que la concentration peut être ajustée à un niveau égal ou inférieur à la limite supérieure déterminée.
PCT/JP2010/057784 2009-12-11 2010-05-07 Processus de production d'un dispositif de conversion photoélectrique Ceased WO2011070805A1 (fr)

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WO2013065522A1 (fr) * 2011-10-31 2013-05-10 三洋電機株式会社 Dispositif photovoltaïque et son procédé de fabrication
JP6438249B2 (ja) * 2014-09-16 2018-12-12 株式会社東芝 電極材料およびそれを用いた電極層、電池並びにエレクトロクロミック素子
US11049894B2 (en) 2018-11-07 2021-06-29 Omnivision Technologies, Inc. Solder mask dam design

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JP2000182975A (ja) * 1998-12-18 2000-06-30 Tdk Corp 半導体の製造方法

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JPH1154773A (ja) * 1997-08-01 1999-02-26 Canon Inc 光起電力素子及びその製造方法
WO2003073515A1 (fr) * 2002-02-28 2003-09-04 National Institute Of Advanced Industrial Science And Technology Cellule solaire a couche mince et procede permettant de produire cette cellule
JP5473187B2 (ja) 2006-09-04 2014-04-16 三菱重工業株式会社 製膜条件設定方法、光電変換装置の製造方法及び検査方法
JP5330723B2 (ja) * 2008-03-28 2013-10-30 三菱重工業株式会社 光電変換装置
JP5308225B2 (ja) * 2009-05-08 2013-10-09 三菱重工業株式会社 光電変換装置及びその製造方法

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JP2000182975A (ja) * 1998-12-18 2000-06-30 Tdk Corp 半導体の製造方法

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