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WO2011070047A1 - Puce à semi-conducteur optoélectronique et procédé de production d'une puce à semi-conducteur optoélectronique - Google Patents

Puce à semi-conducteur optoélectronique et procédé de production d'une puce à semi-conducteur optoélectronique Download PDF

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Publication number
WO2011070047A1
WO2011070047A1 PCT/EP2010/069128 EP2010069128W WO2011070047A1 WO 2011070047 A1 WO2011070047 A1 WO 2011070047A1 EP 2010069128 W EP2010069128 W EP 2010069128W WO 2011070047 A1 WO2011070047 A1 WO 2011070047A1
Authority
WO
WIPO (PCT)
Prior art keywords
contact
radiation
semiconductor chip
optoelectronic semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/069128
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German (de)
English (en)
Inventor
Franz Eberhard
Wolfgang Schmid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to US13/515,261 priority Critical patent/US8829560B2/en
Publication of WO2011070047A1 publication Critical patent/WO2011070047A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

Definitions

  • the present invention relates to a
  • An optoelectronic semiconductor chip is a layer sequence produced in a semiconductor process on a
  • a semiconductor for example a III-V semiconductor, is provided. It's on a substrate
  • the substrate includes, for example, materials such as SiC, sapphire, Ge, Si, GaAs, GaN or GaP.
  • the epitaxial layers include, for example, quaternary semiconductors such as AlInGaN for a blue or green emission spectrum in the visible region, or AlInGaP for a green to red emission spectrum in the visible region.
  • the semiconductors may also have emission spectra in the invisible range, for example in the UV range.
  • the epitaxial layer can be quinternary
  • Such a semiconductor is
  • AlGalnAsP which can serve to emit radiation in the infrared range.
  • the semiconductor layer sequence contains a suitable active zone for generating electromagnetic radiation.
  • the active zone may be a double heterostructure or a
  • Quantum well structure such as a single quantum well structure (SQW, single quantum well) or multiple quantum well structure (MQW, multi quantum well) for generating radiation included.
  • SQL single quantum well structure
  • MQW multiple quantum well structure
  • LED light emitting diode
  • Efficiency ie for a high ratio of emitted electromagnetic radiation to supplied power
  • a homogeneous radiation as homogeneous a current density in the active zone, for example.
  • the problem is in particular a power supply from the side at which the light is coupled out (radiation decoupling side).
  • a current injection on the radiation outcoupling side is usually carried out by contact webs, which are applied to the semiconductor.
  • contact webs Through a dense network of contact webs, the electrical properties of an LED can be optimized. For the optical behavior of such a device, however, the webs are disadvantageous because they lead to shading or absorption. Since light in a thin-film LED travels relatively long distances before it is decoupled, light can be absorbed at the contact lands. The efficiency of the LED is reduced.
  • the present invention is the problem
  • Various embodiments of the optoelectronic semiconductor chip have a radiation outcoupling side and a contact connection. On the
  • Radiation decoupling side is a metallic one
  • Semiconductor chip has a metallic conductive compound applied to the contact material and connected to the contact terminal.
  • Radiation isolation side will be a decomposition of the
  • the contact material serves to impress a current in the
  • Semiconductor layer sequence can be limited to places where it is necessary for the function of the optoelectronic
  • Semiconductor chips is advantageous. This can be achieved, for example, by arranging the contact material in such a way that, as far as possible, a homogenous power supply takes place via the radiation-decoupling side.
  • Contact material can be optimized for its contact resistance at the radiation outcoupling side.
  • the conductive connection can be optimized so that it has a good transverse conductivity. She can also
  • the optoelectronic device be optimized in terms of their influence on the optical behavior of the optoelectronic device. For example, it can be achieved that there are fewer optically passive regions on the radiation outcoupling side.
  • Both the contact material and the conductive compound are metallic, i. E. that they comprise a metal or a metal alloy or, for example, consist of a metal or a metal alloy.
  • the electrical contacting for example, in terms of a homogeneous current injection and a low
  • the power supply can be particularly low
  • Radiation decoupling side or a low absorption of the radiation emitted by the semiconductor layer sequence radiation can be optimized.
  • an area of the contact material is smaller than an area of the conductive connection.
  • Both the contact material and the conductive connection are metallic, i. E. that they comprise a metal or a metal alloy or, for example, consist of a metal or a metal alloy.
  • materials for the conductive compound are, for example, metals or metal alloys with a high
  • a layer of TiWN as a diffusion barrier can be applied to the multilayer metallization layers as a conductive compound
  • Diffusion barrier for example, a gold layer may be applied as a line material.
  • the contact material has metals with a high reflection coefficient for the emitted radiation.
  • Suitable materials for the contact material are metals such as Ag, Ti, Pt, Au, alloys such as AuGe or AuZn or transparent conductive oxides (TCO), such as indium tin oxide (ITO).
  • TCO transparent conductive oxides
  • ITO indium tin oxide
  • the materials used for the contact material or the conductive compound are included
  • reflective metals such as platinum aluminum, gold or silver can be used for this purpose. It is also conceivable that in the metal, a reflective material is introduced, or that the metal with a
  • the reflective material is coated.
  • the reflective material may be, for example, titanium dioxide or zinc dioxide
  • Radiation decoupling side are decoupled. Overall, this achieves efficient radiation of a large part of the radiation generated in the active layer. This provides a particularly energy-efficient optoelectronic semiconductor chip.
  • a dielectric is an electrically weak or non-conductive, non-metallic substance whose charge carriers are generally not free to move. When choosing a dielectric also other properties can be
  • the dielectric can be transparent in the wavelength ranges in which the optoelectronic semiconductor emits radiation.
  • the optical refractive index may be relevant to the selection of the dielectric.
  • the dielectric can as
  • dielectric layer For example, in optoelectronic semiconductors, the following materials are used as a dielectric:
  • the conductive connection comprises a wire ridge structure.
  • the transparent conductive layer comprises a transparent conductive oxide (TCO), such as ITO.
  • TCO transparent conductive oxide
  • a dielectric is provided between the conductive connection and the radiation-decoupling side.
  • the conductive connection is spaced from the radiation extraction side.
  • the majority of the radiation is reflected back into the semiconductor layer sequence because of a total reflection at the interface with the dielectric.
  • This radiation can be coupled out via another point on the radiation-extraction side, over which no section of the conductive connection is arranged.
  • the contact material is distributed on the radiation outcoupling side in such a way that the most homogeneous possible current density is achieved over the semiconductor chip.
  • a distribution for example, takes account of a voltage drop in the conductive connection. Due to the distribution, the contact resistance to
  • Radiation decoupling side are regulated.
  • the contact material has a plurality of separate contact areas, in particular contact points. As a result, a suitable distribution of the contact material on the radiation-extraction side can be selected. In one embodiment, the contact points are distributed unevenly across the radiation extraction side. In one embodiment, the contact points
  • the layer applied in each case for example, by a photolithographic process and etching, partially opened and into the opening of the
  • FIG. 1 is a schematic representation of a plan view of a first exemplary embodiment of an optoelectronic semiconductor chip
  • Fig. 2 is a schematic representation of the
  • Fig. 3 is a schematic representation of the
  • FIG. 4 is a schematic representation of a plan view of a second exemplary embodiment of an optoelectronic semiconductor chip
  • Fig. 5 is a schematic representation of the
  • Fig. 6 is a schematic representation of the
  • Fig. 7 is a schematic representation of a variant of
  • Fig. 8 is a schematic representation of the variant of
  • Fig. 9 is a schematic representation of a
  • FIG. 10 is a schematic representation of a plan view of the third exemplary embodiment of an optoelectronic semiconductor chip
  • FIG. 11 is a schematic representation of a plan view of the third exemplary embodiment of an optoelectronic semiconductor chip with omission of the conductive
  • Fig. 12 is a schematic representation of a sequence of a
  • Fig. 1 shows the schematic representation of a plan view of a first embodiment of a
  • the semiconductor chip 100 has a radiation outcoupling side 102.
  • the semiconductor chip 100 has a radiation outcoupling side 102.
  • Radiation extraction side 102 is a radiation
  • the contact terminal 104 is for example as a Bondpad executed, which can be connected to a bonding wire.
  • the conductive connection 106 is, for example, a wire ridge structure in the form of an applied
  • the conductive connection 106 serves for
  • Semiconductor chips 100 can be embossed.
  • the conductive connection 106 is connected to a semiconductor layer sequence of the optoelectronic semiconductor chip 100.
  • Fig. 2 shows the schematic representation of
  • Optoelectronic semiconductor chip 100 is in the embodiment shown as a thin-film LED chip
  • the semiconductor chip 100 has an electrically conductive contact layer 200. Typically, it comprises a metal, or a layer sequence of conductive materials,
  • a layer sequence comprising one or more metals or a TCO.
  • Contact layer 200 may not be on one in FIG. 2
  • the contact layer 200 is also highly reflective in the wave range of the radiation emitted by the optoelectronic semiconductor chip 100, so that the contact layer 200 also serves as a reflector layer. It is also possible that on the contact layer 200 an additional thin, also
  • electrically conductive reflector layer is applied.
  • contact layer 200 As possible materials for the contact layer 200 come
  • a silver layer may be used as the contact layer 200.
  • the separation layer 202 contains a dielectric material such as SiN or SiO 2. It separates the contact layer 200 from a semiconductor layer sequence 204. In this case, the contact layer 200 and the semiconductor layer sequence 204 become electrically conductive from one another through the separation layer 202
  • the semiconductor layer sequence 204 a pn junction, a double heterostructure or a
  • Quantum well structure such as a single quantum well structure (SQW, single quantum well) or multiple quantum well structure (MQW, multi quantum well) for generating radiation included. 2, a pn junction with a depletion zone 206 is indicated.
  • Passivation layer 208 applied. About the
  • Passivation layer 208 the radiation generated in an active zone of the semiconductor layer sequence 204 is coupled out.
  • the passivation layer 208 covers the
  • Contact connection 104 is from the semiconductor layer sequence 204 electrically insulated by the passivation layer 208.
  • the passivation layer can also serve optical functions, for example an antireflection coating. As a result, no current flow from the contact connection 104 advantageously occurs in the semiconductor layer sequence 204 and it is
  • Contact connection 104 is additionally reduced by a reflection at the passivation layer 208. Overall, the efficiency of the optoelectronic semiconductor chip 100 is thus increased.
  • the conductive connection 106 is also applied. In some places below the conductive connection 106 is the
  • Contact points for example, a contact point 210 arranged. Via the contact point 210, the conductive connection 106 is electrically connected to the semiconductor layer sequence 204. The entire contact points thus serve to supply a
  • Both the conductive connection 106 and the contact points, such as the contact point 210, should include materials having a high electrical conductivity.
  • they may be metals, metallic alloys or doped semiconductor materials.
  • the contact points are by the conductive
  • Compound 106 is completely covered so that it is encapsulated by it and the passivation layer 208. Thus, the contact points are protected against degradation by external influences, for example by oxidation.
  • the distances of the contact points are shown as constant of equal length. You can, however, in others
  • Radiation extraction side 102 vary so as to one Voltage drop along the conductive connection 106 compensate such that over the chip area a homogeneous
  • the sizes of the contact points are not homogeneous, but vary over the area of the radiation-outcoupling side 102
  • the conductive connection 106 forms together with the contact points, including the contact point 210 a first
  • Electrode of the optoelectronic semiconductor chip 100 This electrode may be the anode or the cathode, for example, depending on the arrangement of a pn junction in the
  • Fig. 3 shows the schematic representation of
  • Semiconductor layer structure is substantially identical to the layer sequence of the section along the section axis A-A, as shown in Fig. 2. In contrast to the section along the cutting axis A-A, however, openings B are provided in the separating layer 202 in section B-B, within which a connecting layer 300 is introduced.
  • the connection layer 300 electrically connects the contact layer 200 to the
  • connection layer 300 thus forms the second
  • Electrode of the optoelectronic semiconductor chip 100 Electrode of the optoelectronic semiconductor chip 100.
  • connection layer 300 is provided below the conductive connection 106 and thus also below the contact points, for example the contact point 210; instead, the contact layer 200 is electrically insulated there from the semiconductor layer sequence 204 by the separation layer 202. This is below the conductive connection 106 in the
  • Semiconductor layer sequence 204 generates no radiation. radiation is thus generated in particular in areas in which the radiation can be decoupled readily via the radiation extraction side 102. But even the first electrode is optically optimized. For example, the conductive connection 106 is largely through the
  • Passivation layer 208 underlays, as is apparent from the Fig. 1 to Fig. 3.
  • the radiation generated below the conductive connection 106 or in a surrounding area does not reach the conductive connection by total reflection and can not be absorbed there. This reduces optical losses. Rather, the thus reflected radiation is reflected back into areas from which they are high
  • Probability is decoupled via radiation extraction side 102. This reduces optical losses.
  • the material of the contact points that has a high reflectivity for the radiation generated in the semiconductor layer sequence 204 the overall optical efficiency of the optoelectronic semiconductor chip 100 is increased. A large portion of the generated radiation is coupled out via the radiation-extraction side 102.
  • the semiconductor layer sequence 204 may be completely adjacent to the connection layer 300 or directly to the contact layer 200, without the need for a separation layer 202 or a connection layer 300. In this case, on the whole of the
  • Semiconductor layer sequence 204 impressed a current. Alone by the measures on the radiation extraction side 102 is already greater efficiency than in known
  • Fig. 4 shows the schematic representation of a plan view of a second embodiment of a
  • the optoelectronic semiconductor chip 400 differs substantially from the first exemplary embodiment of FIGS. 1 to 3 in that a transparent one is provided on the radiation-decoupling side 102 Lead layer is applied as a conductive connection. On the radiation extraction side 102 are also a transparent one.
  • Fig. 5 shows the schematic representation of
  • Fig. 4 along a cutting axis A-A.
  • the construction differs in particular from the radiation-decoupling side 102 in comparison to the first exemplary embodiment.
  • a transparent lead-in layer 500 is applied to the semiconductor layer sequence 204.
  • the transparent lead layer 500 serves to distribute the current and allows the coupling of the electromagnetic generated in the semiconductor layer sequence 204
  • the transparent lead layer 500 is transparent in the region of the generated radiation and a
  • conductive material It can be a non-organic or an organic material.
  • Material is a metal oxide, such as ITO.
  • the lead layer 500 covers the
  • the contact points comprise a very good conductive material and serve, as in the first embodiment for supplying the electric current in the semiconductor layer sequence 204. Because of the low
  • Semiconductor layer sequence can be supplied as a substantial proportion of the electric current.
  • Contact points can be the profile of current injection in the
  • Semiconductor layer sequence 204 can be influenced. In doing so, the aim is to achieve as homogeneous a current impression as possible in order to achieve a to create a homogeneous light image on the radiation extraction side 102. Through the contact points can thus the
  • a dense distribution for example of smaller contact points, can be provided in order to achieve the most homogeneous illumination possible.
  • a substantially lower current distribution is necessary in the upper layer of the semiconductor layer sequence 204, for example in an n-doped layer.
  • a small layer thickness of the semiconductor can be selected, as a result of which the production costs are just at an epitaxial
  • Growing the semiconductor layer sequence can be reduced.
  • FIG. 6 shows the contact connection 104 on the optoelectronic semiconductor chip. 6 shows the schematic representation of the semiconductor layer structure of the optoelectronic semiconductor chip according to the second
  • FIG. 4 Embodiment of FIG. 4 along a section axis B-B. It can be seen that the contact connection 104 is applied to the transparent supply layer 500. Thus, the lead layer 500 separates the contact pad 104 from the semiconductor layer sequence 204
  • Fig. 7 shows the schematic representation of a variant of the semiconductor layer structure of the optoelectronic semiconductor chip of Fig. 4 along the section axis AA.
  • the Variant of FIG. 7 differs from the variant of FIGS. 5 and 6 in that between the lead layer 500 and the semiconductor layer sequence 204 a
  • Passivation layer 208 is provided. In the
  • Passivation layer 208 openings are provided, in each of which a contact point, for example, a contact point 210, is introduced. As a result, the lead layer 500 becomes over the contact points with the semiconductor layer sequence 204
  • the current injection takes place on the radiation outcoupling side 102 via the contact points.
  • Connection layer 300 can be changed. This variation is conceivable in connection with all the exemplary embodiments of the optoelectronic semiconductor chip, even if it is shown in FIG. 8 in conjunction with the second exemplary embodiment. In this variation, the connection layer 300 connects the contact layer 200 to the large area over a large area
  • Lead layer 500 particularly advantageous, since so a homogeneous and bright radiation distribution on the
  • Fig. 9 shows the schematic representation of a cross section through a third embodiment of an optoelectronic semiconductor chip.
  • the optoelectronic semiconductor chip 900 contains as active zone in the
  • Semiconductor layer sequence a quantum well structure. This is exemplified by a GaN / InGaN / GaN layer sequence
  • the optoelectronic semiconductor chip 900 contains a contact layer 200, on which a semiconductor layer sequence is arranged.
  • the contact layer 200 serves as an electrode of the optoelectronic semiconductor chip 900. Accordingly, it contains a material having low contact resistance, such as a
  • Metal eg silver (Ag).
  • Ag silver
  • the contact layer 200 is advantageously in the range of in the
  • optoelectronic semiconductor chip 900 generated radiation have a high reflection coefficient.
  • Semiconductor material 902 is, for example, a p-doped gallium nitride (GaN).
  • An active zone 904 is disposed on the first semiconductor material 902.
  • the active zone 904 comprises for example one made of In x Ga (] _- x) N-type semiconductor, with 0 ⁇ x ⁇ 1, and includes a single quantum well.
  • a second semiconductor material 906 is arranged on the active zone 904.
  • the second semiconductor material 906 is doped with a dopant having a different polarity than the dopant of the first semiconductor material.
  • Semiconductor material 906 is, for example, an n-doped GaN.
  • the second semiconductor material 906 has a side facing away from the active zone 904, which has a roughened surface.
  • the electromagnetic radiation generated in the active zone 904 is roughened over the
  • the semiconductor layer sequence comprises the first semiconductor material 902, the active zone 904 and the second semiconductor material 906. Due to the roughened surface, a particularly efficient decoupling of the radiation is possible.
  • the roughened surface and the side surfaces of the semiconductor layer sequence are covered by a passivation layer 908 and are thus protected from environmental influences.
  • the passivation layer 908 may consist of the same or
  • the passivation layer 908 is on a
  • Radiation extraction side 910 opened.
  • a contact material 912 is introduced.
  • a conductive connection 914 is applied.
  • the contact material 912 is completely covered by the conductive connection 914 so that it is encapsulated by it and the passivation layer 908. Thus, the contact material 912 is protected from degradation by external influences, for example by oxidation.
  • the function of the contact material 912 is electrical contact with the semiconductor layer sequence
  • Radiation extraction side 910 is used. Accordingly, both structures can be optimized accordingly. This is illustrated by way of example with reference to FIG. 10 and FIG. 11.
  • FIG. 10 shows the schematic illustration of a plan view of the optoelectronic semiconductor chip 900.
  • the configuration of the conductive connection 914 on the radiation extraction side 910 is illustrated.
  • the conductive connection 914 is electrically connected to a contact terminal 1000.
  • the contact terminal 1000 is used for contacting the optoelectronic semiconductor chip 900 with a
  • the conductive connection 914 extends along the radiation outcoupling side 910, paying attention to the lowest possible shadowing of the radiation. As it is the function of the conductive connection in particular in the
  • Distribution of an electrical current supplied via the contact terminal 1000 is as constant as possible and high conductivity over the entire spatial extent of the conductive compound respected.
  • FIG. 11 shows the schematic illustration of a plan view of the optoelectronic semiconductor chip 900.
  • Radiation extraction side 910 shown.
  • the function of the contact material 912 is, in particular, in a homogeneous current injection over the radiation outcoupling side 910.
  • the contact material 912 has a better one
  • Fig. 12 shows the schematic representation of a method for producing an optoelectronic
  • the procedure can be part of a
  • Manufacturing method comprising known process steps for producing a semiconductor chip.
  • a semiconductor layer sequence which comprises a
  • Semiconductor layer sequence may be generated by epitaxial growth. For example, it may be part of a
  • a transparent intermediate layer is applied to the
  • the application of the Interlayer can be made by a known method, such as sputtering or a CVD method.
  • the intermediate layer may be a dielectric or a conductive material, for example ITO.
  • Step 1204 opened a recess.
  • Recess is introduced in a fourth process step 1206, a contact material.
  • These method steps may include, for example, process steps, such as
  • Embodiment after a Waferbonden and after a possible mesa etching an intermediate layer in the form of a passivation are deposited on the wafer.
  • Photo step the passivation is opened and introduced into the opening a metallic alloy as a contact material.
  • a metallic alloy as a contact material.
  • the contact material can be lifted outside the opening.
  • the conductive compound can be deposited and patterned.
  • a contact terminal for example, a bond pad, on the passivation, so that no direct current flow of the
  • the same material is used for the contact material and for the conductive connection.
  • the photoresist be removed immediately after opening the passivation and with another
  • conductive compound are deposited in a process step.
  • contact points are applied as a contact material on the radiation outcoupling side.
  • a contact connection can already be applied to the radiation extraction side.
  • Radiation outcoupling side opposite carrier side of the semiconductor layer sequence to prevent the carrier side in areas that are immediately under the contact material, electrically isolated.
  • the contact material is patterned directly on the radiation outcoupling side. Likewise, it is conceivable that initially a transparent
  • a passivation layer and / or a conductive layer are applied and then a recess is opened, in which the contact material
  • Optoelectronic semiconductor chip 900 Optoelectronic semiconductor chip 900

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Abstract

Différentes formes d'exécution de la puce à semi-conducteur optoélectronique présentent une face de sortie du rayonnement (102) et une connexion de contact. Un matériau de contact métallique (210) est appliqué sur la face de sortie du rayonnement (102). La puce à semi-conducteur optoélectronique présente une jonction (106) conductrice métallique, appliquée sur le matériau de contact (210), et liée avec la connexion de contact. L'invention concerne un procédé de production d'une puce à semi-conducteur optoélectronique.
PCT/EP2010/069128 2009-12-11 2010-12-08 Puce à semi-conducteur optoélectronique et procédé de production d'une puce à semi-conducteur optoélectronique Ceased WO2011070047A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US13/515,261 US8829560B2 (en) 2009-12-11 2010-12-08 Optoelectronic semiconductor chip and method for fabricating an optoelectronic semiconductor chip

Applications Claiming Priority (2)

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DE102009054555A DE102009054555A1 (de) 2009-12-11 2009-12-11 Optoelektronischer Halbleiterchip und Verfahren zum Herstellen eines optoelektronischen Halbleiterchips
DE102009054555.7 2009-12-11

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WO2011070047A1 true WO2011070047A1 (fr) 2011-06-16

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DE (1) DE102009054555A1 (fr)
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DE102016101612A1 (de) 2016-01-29 2017-08-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102018103291A1 (de) * 2018-02-14 2019-08-14 Osram Opto Semiconductors Gmbh Optoelektronisches halbleiterbauteil und verfahren zur herstellung eines optoelektronischen halbleiterbauteils
DE102019126506A1 (de) 2019-10-01 2021-04-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optoelektronischen halbleiterchips und optoelektronischer halbleiterchip

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DE102009054555A1 (de) 2011-06-16

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