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WO2011061694A3 - Procédé de fabrication de cellules photovoltaïques, cellules photovoltaïques produites selon ce procédé, et utilisations de celles-ci - Google Patents

Procédé de fabrication de cellules photovoltaïques, cellules photovoltaïques produites selon ce procédé, et utilisations de celles-ci Download PDF

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Publication number
WO2011061694A3
WO2011061694A3 PCT/IB2010/055221 IB2010055221W WO2011061694A3 WO 2011061694 A3 WO2011061694 A3 WO 2011061694A3 IB 2010055221 W IB2010055221 W IB 2010055221W WO 2011061694 A3 WO2011061694 A3 WO 2011061694A3
Authority
WO
WIPO (PCT)
Prior art keywords
photovoltaic cells
layer
manufacturing
produced
cells produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2010/055221
Other languages
English (en)
Other versions
WO2011061694A2 (fr
Inventor
Marat Zaks
Galina Kolomoets
Andrey Sitnikov
Oleg Solodukha
Lev Kreinin
Naftali P. Eisenberg
Ninel Bordin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
B-Solar Ltd
SOLAR WIND TECHNOLOGIES Inc
Original Assignee
B-Solar Ltd
SOLAR WIND TECHNOLOGIES Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/591,391 external-priority patent/US20110114147A1/en
Priority claimed from US12/591,390 external-priority patent/US8586862B2/en
Application filed by B-Solar Ltd, SOLAR WIND TECHNOLOGIES Inc filed Critical B-Solar Ltd
Priority to JP2012539462A priority Critical patent/JP2013511839A/ja
Priority to EP10793317A priority patent/EP2502277A2/fr
Priority to CN2010800616051A priority patent/CN102754215A/zh
Priority to CA2780913A priority patent/CA2780913A1/fr
Publication of WO2011061694A2 publication Critical patent/WO2011061694A2/fr
Publication of WO2011061694A3 publication Critical patent/WO2011061694A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne de nouveaux procédés de fabrication de cellules photovoltaïques, ainsi que des cellules photovoltaïques produites selon ces procédés et les utilisations de celles-ci. Dans certains modes de réalisation, un tel procédé consiste à doper un substrat de façon à former une couche dopée p+ sur une face et une couche dopée n+ sur l'autre face, à appliquer un revêtement antireflet sur la couche dopée p+, à enlever au moins une partie de la couche dopée n+, puis à former une seconde couche dopée n+ de façon que la concentration de dopant n dans la seconde couche dopée n+ soit variable dans l'ensemble de la surface du substrat.
PCT/IB2010/055221 2009-11-18 2010-11-17 Procédé de fabrication de cellules photovoltaïques, cellules photovoltaïques produites selon ce procédé, et utilisations de celles-ci Ceased WO2011061694A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2012539462A JP2013511839A (ja) 2009-11-18 2010-11-17 光起電力セルの製造方法、それによって製造された光起電力セル、およびその用途
EP10793317A EP2502277A2 (fr) 2009-11-18 2010-11-17 Procédé de fabrication de cellules photovoltaïques, cellules photovoltaïques produites selon ce procédé, et utilisations de celles-ci
CN2010800616051A CN102754215A (zh) 2009-11-18 2010-11-17 制造光伏电池的方法、由该方法制造的光伏电池及其应用
CA2780913A CA2780913A1 (fr) 2009-11-18 2010-11-17 Procede de fabrication de cellules photovoltaiques, cellules photovoltaiques produites selon ce procede, et utilisations de celles-ci

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/591,391 2009-11-18
US12/591,390 2009-11-18
US12/591,391 US20110114147A1 (en) 2009-11-18 2009-11-18 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US12/591,390 US8586862B2 (en) 2009-11-18 2009-11-18 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof

Publications (2)

Publication Number Publication Date
WO2011061694A2 WO2011061694A2 (fr) 2011-05-26
WO2011061694A3 true WO2011061694A3 (fr) 2012-01-19

Family

ID=44060135

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/IB2010/055221 Ceased WO2011061694A2 (fr) 2009-11-18 2010-11-17 Procédé de fabrication de cellules photovoltaïques, cellules photovoltaïques produites selon ce procédé, et utilisations de celles-ci
PCT/IB2010/055219 Ceased WO2011061693A2 (fr) 2009-11-18 2010-11-17 Procédé de fabrication de cellules photovoltaïques, cellules photovoltaïques produites selon ce procédé, et utilisations de celles-ci

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/IB2010/055219 Ceased WO2011061693A2 (fr) 2009-11-18 2010-11-17 Procédé de fabrication de cellules photovoltaïques, cellules photovoltaïques produites selon ce procédé, et utilisations de celles-ci

Country Status (5)

Country Link
EP (2) EP2502278A2 (fr)
JP (2) JP6027443B2 (fr)
CN (2) CN102754215A (fr)
CA (2) CA2781085A1 (fr)
WO (2) WO2011061694A2 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8586862B2 (en) 2009-11-18 2013-11-19 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US8796060B2 (en) 2009-11-18 2014-08-05 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
KR101627029B1 (ko) * 2014-02-20 2016-06-03 제일모직주식회사 Ibc 태양전지의 제조방법
KR101627028B1 (ko) * 2014-02-20 2016-06-03 제일모직주식회사 양면형 태양전지의 제조방법
CN104051575B (zh) * 2014-06-20 2016-08-17 润峰电力有限公司 一种仿生双面受光太阳能电池的制作工艺
WO2017072758A1 (fr) 2015-10-25 2017-05-04 Solaround Ltd. Procédé de fabrication de cellule bifaciale
CN107340785B (zh) * 2016-12-15 2021-05-18 江苏林洋新能源科技有限公司 一种基于智能化控制的双面光伏电池组件跟踪方法及控制器
CH713453A1 (de) 2017-02-13 2018-08-15 Evatec Ag Verfahren zur Herstellung eines Substrates mit einer bordotierten Oberfläche.
EP3738139A4 (fr) * 2018-01-08 2021-10-06 Solaround Ltd. Cellule photovoltaïque bifaciale et son procédé de fabrication
CN113711367A (zh) * 2019-01-30 2021-11-26 特古拉屋顶解决方案有限责任公司 光伏电池、封装光伏电池制造工艺、光伏瓦的电连接组件和光伏屋顶瓦
CN113540269B (zh) 2021-09-14 2022-04-12 浙江晶科能源有限公司 太阳能电池及其制备方法、光伏组件
CN119850580B (zh) * 2025-01-03 2025-11-21 香港理工大学深圳研究院 一种接触网零部件检测方法、装置、终端及存储介质

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US6147297A (en) * 1995-06-21 2000-11-14 Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Solar cell having an emitter provided with a surface texture and a process for the fabrication thereof
WO2009010585A2 (fr) * 2007-07-18 2009-01-22 Interuniversitair Microelektronica Centrum Vzw Procédé pour produire une structure d'émetteur et structures d'émetteur obtenues par ce procédé

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JPH11512886A (ja) * 1995-10-05 1999-11-02 エバラ・ソーラー・インコーポレーテッド 自己整列的に部分的に深く拡散したエミッタの太陽電池
US5871591A (en) 1996-11-01 1999-02-16 Sandia Corporation Silicon solar cells made by a self-aligned, selective-emitter, plasma-etchback process
US6552414B1 (en) 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
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RU2139601C1 (ru) 1998-12-04 1999-10-10 ООО Научно-производственная фирма "Кварк" Способ изготовления солнечного элемента с n+-p-p+ структурой
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JP4232597B2 (ja) * 2003-10-10 2009-03-04 株式会社日立製作所 シリコン太陽電池セルとその製造方法
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US6147297A (en) * 1995-06-21 2000-11-14 Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Solar cell having an emitter provided with a surface texture and a process for the fabrication thereof
WO2009010585A2 (fr) * 2007-07-18 2009-01-22 Interuniversitair Microelektronica Centrum Vzw Procédé pour produire une structure d'émetteur et structures d'émetteur obtenues par ce procédé

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Also Published As

Publication number Publication date
WO2011061694A2 (fr) 2011-05-26
EP2502277A2 (fr) 2012-09-26
JP2013511838A (ja) 2013-04-04
JP2013511839A (ja) 2013-04-04
JP6027443B2 (ja) 2016-11-16
WO2011061693A2 (fr) 2011-05-26
WO2011061693A3 (fr) 2012-01-05
EP2502278A2 (fr) 2012-09-26
CA2781085A1 (fr) 2011-05-26
CN102725854B (zh) 2015-11-25
CN102725854A (zh) 2012-10-10
CA2780913A1 (fr) 2011-05-26
CN102754215A (zh) 2012-10-24

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