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WO2011060764A3 - Formation d'émetteur au moyen d'un laser - Google Patents

Formation d'émetteur au moyen d'un laser Download PDF

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Publication number
WO2011060764A3
WO2011060764A3 PCT/DE2010/001344 DE2010001344W WO2011060764A3 WO 2011060764 A3 WO2011060764 A3 WO 2011060764A3 DE 2010001344 W DE2010001344 W DE 2010001344W WO 2011060764 A3 WO2011060764 A3 WO 2011060764A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser
solar cell
emitter formation
contact
contact solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/DE2010/001344
Other languages
German (de)
English (en)
Other versions
WO2011060764A2 (fr
Inventor
Peter Grabitz
Gerhard Wahl
Frank Schomann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SYSTAIC CELLS GmbH
Original Assignee
SYSTAIC CELLS GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SYSTAIC CELLS GmbH filed Critical SYSTAIC CELLS GmbH
Publication of WO2011060764A2 publication Critical patent/WO2011060764A2/fr
Publication of WO2011060764A3 publication Critical patent/WO2011060764A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10P34/42—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

La présente invention concerne une pile solaire à contact arrière (4) et un procédé pour réaliser une pile solaire à contact arrière (4), une étape de traitement supplémentaire consistant à mettre en contact un substrat transparent avec le côté arrière d'une tranche de silicium, à introduire un agent de dopage localement par application d'un laser, puis à mettre en contact la base du silicium de type n à l'aide d'un film recouvert de métal et d'un autre traitement laser.
PCT/DE2010/001344 2009-11-19 2010-11-19 Formation d'émetteur au moyen d'un laser Ceased WO2011060764A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009053776A DE102009053776A1 (de) 2009-11-19 2009-11-19 Emitterbildung mit einem Laser
DE102009053776.7 2009-11-19

Publications (2)

Publication Number Publication Date
WO2011060764A2 WO2011060764A2 (fr) 2011-05-26
WO2011060764A3 true WO2011060764A3 (fr) 2012-02-02

Family

ID=43877159

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2010/001344 Ceased WO2011060764A2 (fr) 2009-11-19 2010-11-19 Formation d'émetteur au moyen d'un laser

Country Status (2)

Country Link
DE (1) DE102009053776A1 (fr)
WO (1) WO2011060764A2 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011015283B4 (de) * 2011-03-28 2013-03-07 Bayerisches Zentrum für Angewandte Energieforschung e.V. Herstellung eines Halbleiter-Bauelements durch Laser-unterstütztes Bonden und damit hergestelltes Halbleiter-Bauelement
DE102011077450A1 (de) * 2011-06-14 2012-12-20 Robert Bosch Gmbh Verfahren und Anordnung zur Herstellung einer kristallinen Solarzelle
DE102012003866B4 (de) 2012-02-23 2013-07-25 Universität Stuttgart Verfahren zum Kontaktieren eines Halbleitersubstrates, insbesondere zum Kontaktieren von Solarzellen, sowie Solarzellen
DE102012214254A1 (de) * 2012-08-10 2014-05-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Laserbasiertes Verfahren und Bearbeitungstisch zur lokalen Kontaktierung eines Halbleiterbauelements
EP2709162A1 (fr) * 2012-09-13 2014-03-19 Roth & Rau AG Cellule photovoltaïque et module de cellule photovoltaïque reposant sur celle-ci
EP2956966A1 (fr) * 2013-02-14 2015-12-23 Universität Konstanz Cellule solaire à contact arrière, sans barre omnibus, procédé de fabrication et module solaire présentant ces cellules solaires
CN104282771B (zh) * 2013-07-09 2017-04-12 英稳达科技股份有限公司 背面接触型太阳能电池
CN103413860A (zh) * 2013-07-17 2013-11-27 湖南红太阳光电科技有限公司 一种局域背面钝化晶体硅电池的制备方法
EP3169824A4 (fr) * 2014-07-15 2018-02-28 Natcore Technology Inc. Cellules solaires à contact arrière interdigité (ibc) transférées par laser
CN105914249B (zh) * 2016-06-27 2018-07-17 泰州隆基乐叶光伏科技有限公司 全背电极接触晶硅太阳能电池结构及其制备方法
CN106653881B (zh) * 2017-02-24 2018-12-25 泰州中来光电科技有限公司 一种背接触太阳能电池串及其制备方法和组件、系统
CN107425080B (zh) * 2017-03-03 2019-11-15 广东爱康太阳能科技有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN106952972B (zh) * 2017-03-03 2019-04-19 广东爱旭科技股份有限公司 P型perc双面太阳能电池及其组件、系统和制备方法
CN111524797A (zh) * 2020-04-26 2020-08-11 泰州中来光电科技有限公司 一种选择性发射极的制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080202577A1 (en) * 2007-02-16 2008-08-28 Henry Hieslmair Dynamic design of solar cell structures, photovoltaic modules and corresponding processes
DE102007010872A1 (de) * 2007-03-06 2008-09-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Präzisionsbearbeitung von Substraten und dessen Verwendung
DE102008057228A1 (de) * 2008-01-17 2009-07-23 Schmid Technology Gmbh Verfahren und Vorrichtung zur Herstellung einer Solarzelle

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004036220B4 (de) 2004-07-26 2009-04-02 Jürgen H. Werner Verfahren zur Laserdotierung von Festkörpern mit einem linienfokussierten Laserstrahl
DE102006044936B4 (de) 2006-09-22 2008-08-07 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Metallisierung von Solarzellen und dessen Verwendung

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080202577A1 (en) * 2007-02-16 2008-08-28 Henry Hieslmair Dynamic design of solar cell structures, photovoltaic modules and corresponding processes
DE102007010872A1 (de) * 2007-03-06 2008-09-18 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Präzisionsbearbeitung von Substraten und dessen Verwendung
DE102008057228A1 (de) * 2008-01-17 2009-07-23 Schmid Technology Gmbh Verfahren und Vorrichtung zur Herstellung einer Solarzelle

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ROBBELEIN J ET AL: "Industrial type passivation on interdigitated back junction solar cells", PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2009 34TH IEEE, IEEE, PISCATAWAY, NJ, USA, 7 June 2009 (2009-06-07), pages 964 - 967, XP031626418, ISBN: 978-1-4244-2949-3 *

Also Published As

Publication number Publication date
WO2011060764A2 (fr) 2011-05-26
DE102009053776A1 (de) 2011-06-01

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