WO2010139116A1 - Light emitting diode lamp heat dissipation method - Google Patents

Abstract

A light emitting diode (LED) lamp heat dissipation method is provided, the lamp includes a substrate (1), a LED lamp electronic module provided on the substrate (1) and electrode sheets (2), the method includes the following steps of :1) forming a through hole (3) on the position where a LED chip or chip module (5) is pre-arranged on the substrate, for accommodating the LED chip or chip module (5); 2) jointing the substrate (1) and a metal heat dissipation plate (4) in the state of electrical insulation; 3) arranging the chip or chip module (5) on the metal heat dissipation plate (4) corresponding to the through hole (3) of the substrate to obtain heat conducting contact between the heat dissipation surface of the chip or chip module (5) and the metal heat dissipation plate (4); and 4) connecting electrically the chip or chip module (5) and the electrode sheets (2) via leads (6), thereby obtain better heat dissipation of the chip or chip module (5).

Description

 Instruction manual

 LED lamp cooling method

Technical field

 The present invention relates to the field of semiconductor lighting application technologies, and in particular, to a method for fabricating an efficient and energy-saving LED lamp heat dissipation substrate.

Background technique

High-power LED lighting is currently facing many technical challenges. However, in order to solve these technical problems, the LED industry has applied many different methods to solve core problems including heat dissipation, light type, brightness, service life and cost. . In the production process of existing high-light power LED lamps, the substrate capable of conducting heat is an essential guarantee for high-power LED lamps. If the high-power LED heat dissipation problem is not solved well, the brightness attenuation phenomenon will be accelerated, thereby reducing the brightness and use of the product. life. In order to satisfy the heat dissipation effect of the LED lamp, the substrate of the common LED lamp usually has a metal base layer, which is generally aluminum. The aluminum base layer has the characteristics of thin insulation layer, low thermal resistance, non-magnetic property, good heat dissipation, and excellent processing performance. However, whether it is a rubber layer or aluminum metal carrier board (ll~2 W/mk), the thermal conductivity is too poor to guide the heat smoothly, and the heat dissipation function is not ideal. It also uses the production technology of ceramic direct copper-clad method. It combines the excellent thermal conductivity of copper sheet with high-insulation ceramic board into a composite board with high thermal conductivity, high insulation and excellent solder resistance. Relatively speaking, there are many process steps, and copper raw materials have been rising, affecting mass production and revenue. In order to achieve satisfactory thermal conduction between the conductive layer and the substrate, and to maintain the insulation capability, many manufacturers have spent a considerable amount of effort to develop various layers capable of conducting heat. This material always has a certain thermal resistance, due to the final Epoxy adhesive encapsulated wafer epoxy is low Thermally conductive material, so the heat generated at the PN junction is difficult to be dissipated and conducted through the epoxy adhesive. Most of the heat can only pass through the substrate, silver paste, shell, epoxy bonding layer, PCB. The heat diverges below the sediment. Obviously, all materials in the existing technical solutions will affect the heat dissipation efficiency of the components.

Summary of the invention

 SUMMARY OF THE INVENTION An object of the present invention is to provide a method for fabricating an LED lamp substrate which is simple in manufacturing, low in cost, convenient for popularization, and has high heat dissipation performance, overcoming the deficiencies of the prior art.

 In order to achieve the above object, the present invention adopts the following technical solutions:

 The method for manufacturing a heat dissipation substrate for an LED lamp comprises a substrate, and the electrode sheet is disposed on the substrate, comprising the following steps:

 The LED lamp heat dissipation method comprises a substrate, an LED lamp assembly and an electrode sheet disposed on the substrate, wherein:

 Including the following steps:

 1), a through hole for accommodating a wafer or a wafer electrical component is disposed at a preset LED wafer or a wafer electrical component on the substrate;

 2) electrically insulating the substrate from the metal heat sink;

 3), providing a wafer or a crystal element on a corresponding metal heat sink on the substrate through hole, so that the heat dissipation surface of the wafer or the crystal element is in thermal contact with the metal heat sink;

 4), electrically connecting the wafer or the wafer electrical component to the electrode pad through the wire;

 Also includes the following steps

5), the wafer, the electrode sheet and the wire assembly are encapsulated by epoxy glue or silicone. The substrate is a single-sided printed circuit board, or a double-sided printed circuit board, or a multilayer printed circuit board; or the substrate is a single-sided flexible circuit board, or a double-sided flexible circuit board, or a multilayer flexible circuit board .

 The substrate and the metal plate are joined by bonding, or by pressure bonding, or by heat bonding by a connector.

 The step 3 described includes the following sub-steps:

 3.1) If the metal heat sink is a solderable metal heat sink, the wafer or wafer electrical component is directly soldered to the metal heat sink at the through hole;

 3.2) If the metal heat sink is a metal heat sink without solderability, first pretreat the metal heat sink at the through hole, plating a layer of copper, tin, or gold, or silver, and then crystal a meta or crystal element electrical component is soldered to the plating layer;

Or 3.3) directly bonding the wafer or the wafer electrical component to the metal heat sink at the through hole by a thermally conductive adhesive.

 When the bottom of the crystal cell is a negative electrode, the bottom portion thereof is a heat dissipating surface, and the heat dissipating surface is directly in contact with the metal heat dissipating plate, and the top portion thereof is electrically connected to the electrode sheet through the soldering wire.

 When the polarities of the crystal cells are all at the top, the two poles are respectively electrically connected to the electrode sheets through the wires. The LED electrical component is a high power semiconductor switching device.

 The heat dissipating surface of the crystal cell is a crystal case or a cell negative.

 This technology is also suitable for the fabrication of high power device substrates that require heat dissipation.

 Through the above technical solution, the invention has the following beneficial effects:

1. Due to the open hole on the plate at the wafer setting, and the bottom of the through hole is a metal heat sink, the heat dissipation of the wafer can be directly passed through the metal heat sink. Now, the heat dissipation performance is high;

 2. Innovative design, firm and reliable, can be manufactured according to actual needs;

3. Easy to manufacture, low cost and high degree of automation;

 4. The product has long service life, stable quality and energy saving.

DRAWINGS

 1 is a schematic structural view of a single-sided substrate of an LED lamp heat dissipation method according to the present invention.

 Fig. 2 is a schematic view showing the structure of a single-sided substrate of a method for dissipating heat of an LED lamp according to the present invention.

 3 is a schematic structural view of a double-sided substrate of the LED lamp heat dissipation method of the present invention.

 Fig. 4 is a schematic view showing the structure of a double-sided substrate in which a method for dissipating heat of an LED lamp according to the present invention is provided with a wafer.

detailed description

 The invention will now be described in detail with reference to the accompanying drawings.

 As shown in FIG. 1 and FIG. 2, the LED lamp heat dissipation method comprises a substrate 1, and the LED lamp electrical component and the electrode chip 2 are disposed on the substrate, and the following steps are included:

 1), a through hole 3 is formed in the preset crystal cell on the single-sided substrate;

 2) adding an insulating layer (not shown) on the back surface of the substrate, and the substrate is glued and fixed to the aluminum metal heat sink 4 through the adhesive layer;

 3) pre-treating the through-hole on the aluminum metal heat sink, plating a layer of tin, and then soldering the wafer 5 on the tin layer, the bottom of the wafer is the negative electrode, and the negative electrode is the heat-dissipating surface; or directly The thermally conductive adhesive bonds the wafer to the iron metal heat sink;

4), connecting the wafer to the corresponding electrode sheet through the wire 6; 5), the wafer, the electrode sheet and the wire assembly epoxy glue 7 are packaged.

 In the second embodiment, as shown in FIG. 3 and FIG. 4, the method for manufacturing the heat dissipation substrate of the LED lamp comprises a substrate Γ, and the electrode sheet 2 ′ is disposed on the substrate, comprising the following steps:

 1), an insulating layer 3a' is added on the back surface of the double-sided substrate, and a through hole 3' for accommodating the crystal element is opened at the predetermined crystal element of the substrate, and the through hole penetrates the insulating layer;

 2), an insulating layer is applied on the insulating layer of the substrate, and the substrate and the insulating layer are glued and fixed to the iron metal heat sink 4 through a glue layer (not shown);

 3), bonding the wafer 5' to the iron metal heat sink through the heat conductive adhesive on the corresponding through hole of the iron metal heat sink; or directly soldering the wafer 5' to the iron metal heat sink Upper

 4), connecting the wafer to the corresponding electrode sheet through the wire 6', the polarity of the wafer is at the top;

5), the wafer, electrode sheet and wire assembly epoxy glue 7' package.

 Of course, the circuit board can be a PCB board or an FPC board, and the through holes can be automatically stamped.

 Or, in the process of the method, before the step 1, the method may further include:

1.1) If the substrate is a double-panel without an insulating layer, an insulating layer is first connected to the back surface of the substrate by bonding or solid pressing, and the through hole penetrates the insulating layer;

 1.2), if the substrate is a double-panel without an insulating layer but with an insulating layer, the through-hole penetrates the insulating layer;

 1.3) If the substrate is a double panel with an insulating layer, the through hole penetrates the insulating layer. Between the steps 1 and 2 described above, the following steps are further included:

2.1), if the substrate is a single panel that has been bonded with an insulating layer or is already bonded The insulating plate or the double panel with the insulating plate is provided with a glue layer on the back surface of the substrate insulating layer, and the substrate is thermally bonded to the metal heat sink through the glue layer; the through hole penetrates the insulating rubber layer;

 2.2) If the substrate is a double-panel without an insulating layer but with an insulating layer, directly heat-bond the substrate to the metal heat sink.

 Or the substrate is a double-panel with a glue layer, and it is only necessary to directly bond the substrate to the metal heat sink.

 Alternatively, the substrate and the metal heat sink may be fixed by soldering, crimping, or the like.

 Alternatively, the arrangement of the through holes is not a die, but a die electrical component. Similarly, directly soldering or bonding the electrical component to the metal heat sink at the through hole is within the scope of the present invention.

 At the same time, this method is not only suitable for LED lamps, but also for the fabrication of heat-emitting substrates of the same type of high-power devices that require heat dissipation, such as semiconductor switching devices.

 Compared with the prior art, since the through hole is formed on the substrate where the crystal element or the crystal element is disposed, and the bottom of the hole is a metal heat dissipation plate, the wafer or the electrical component can be directly contacted with the metal heat dissipation plate. Therefore, the heat generated by the LED can be directly transmitted and transmitted through the metal heat sink, and the heat dissipation performance is high; the innovative design is firm and reliable, and can be manufactured according to actual needs; the manufacturing is easy, the cost is low, the degree of automation is high; and the product has a long service life. Stable quality and energy saving.

Claims

Claim  A method for dissipating heat of an LED lamp, comprising: a substrate, an LED lamp assembly and an electrode sheet disposed on the substrate, wherein:  Including the following steps:  1), a through hole for accommodating a wafer or a wafer electrical component is disposed at a preset LED wafer or a wafer electrical component on the substrate;  2) electrically insulating the substrate from the metal heat sink;  3), providing a wafer or a crystal element on a corresponding metal heat sink on the substrate through hole, so that the heat dissipation surface of the wafer or the crystal element is in thermal contact with the metal heat sink;  4), electrically connecting the wafer or the wafer electrical component to the electrode pad through the wire.  2. The method of dissipating heat of an LED lamp according to claim 1, further comprising the steps of  5), the wafer, the electrode sheet and the wire assembly are encapsulated by epoxy glue or silicone.  The heat dissipation method for an LED lamp according to claim 1, wherein: the substrate is a single-sided printed circuit board, or a double-sided printed circuit board, or a multilayer printed circuit board; or the substrate is a single A flexible circuit board, or a double-sided flexible circuit board, or a multilayer flexible circuit board. The method of dissipating heat of an LED lamp according to claim 1 or 2 or 3, wherein the substrate and the metal plate are joined by bonding, or by pressure bonding, or by heat-dissipating by a connecting member.  The method of dissipating heat of an LED lamp according to claim 1 or 2 or 3, wherein the step 3 comprises the following substeps: 3.1) If the metal heat sink is a solderable metal heat sink, then the crystal or crystal The electrical component is directly soldered to the metal heat sink at the through hole;  3.2) If the metal heat sink is a metal heat sink without solderability, first pretreat the metal heat sink at the through hole, plating a layer of copper, tin, or gold, or silver, and then crystal a meta or crystal element electrical component is soldered to the plating layer; Or 3.3) directly bonding the wafer or the wafer electrical component to the metal heat sink at the through hole by a thermally conductive adhesive.  The heat dissipation method for an LED lamp according to claim 1 or 2 or 3, wherein: when the bottom of the wafer is a heat dissipating surface and is a negative electrode, the anode of the wafer directly contacts the metal heat sink, and the top of the wafer passes The welding wire is electrically connected to the electrode piece.  The method of dissipating heat of an LED lamp according to claim 1 or 2 or 3, wherein: when the polarities of the crystal cells are all at the top, the two poles are respectively electrically connected to the electrode sheets through the wires.  The LED lamp heat dissipation method according to claim 1 or 2 or 3, wherein the LED electrical component is a high power device requiring heat dissipation.  The method of dissipating heat of an LED lamp according to claim 1 or 2 or 3, wherein: the heat dissipating surface of the wafer is a crystal case or a cell negative.