WO2010104039A1 - Glass substrate and method for manufacturing same - Google Patents
Glass substrate and method for manufacturing same Download PDFInfo
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- WO2010104039A1 WO2010104039A1 PCT/JP2010/053800 JP2010053800W WO2010104039A1 WO 2010104039 A1 WO2010104039 A1 WO 2010104039A1 JP 2010053800 W JP2010053800 W JP 2010053800W WO 2010104039 A1 WO2010104039 A1 WO 2010104039A1
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- WIPO (PCT)
- Prior art keywords
- glass substrate
- polishing
- chamfered
- end surface
- chamfered surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J17/00—Gas-filled discharge tubes with solid cathode
- H01J17/02—Details
- H01J17/16—Vessels; Containers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/08—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass
- B24B9/10—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of glass of plate glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/24—Manufacture or joining of vessels, leading-in conductors or bases
- H01J9/241—Manufacture or joining of vessels, leading-in conductors or bases the vessel being for a flat panel display
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2217/00—Gas-filled discharge tubes
- H01J2217/38—Cold-cathode tubes
- H01J2217/49—Display panels, e.g. not making use of alternating current
- H01J2217/492—Details
- H01J2217/49264—Vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
- H01J2329/86—Vessels
- H01J2329/8605—Front or back plates
- H01J2329/861—Front or back plates characterised by the shape
Definitions
- the present invention relates to a glass substrate formed by optimizing the surface properties of a boundary portion between a front surface and a back surface and end surfaces existing between outer peripheral ends of both surfaces, and a manufacturing method thereof.
- image (video) display devices in recent years are flat panel displays (FPD) represented by a liquid crystal display (LCD), a plasma display (PDP), a field emission display (FED), an organic EL display (OLED), and the like.
- FPD flat panel displays
- LCD liquid crystal display
- PDP plasma display
- FED field emission display
- OLED organic EL
- planar light source such as a backlight of an LCD or a light source for indoor lighting by causing only three colors (for example, white) to emit light without causing the three primary colors to be flickered by a TFT unlike OLED.
- FPDs and illuminations are each configured by attaching and combining various components including respective elements and wirings on the surface of the glass substrate.
- FPD is formed by forming a plurality of FPD panel elements on a single large glass substrate, and finally dividing them appropriately to obtain individual FPD glass panels. So-called multi-taking is performed. Since this multi-collection improves the efficiency as the glass substrate becomes larger, a glass substrate having a side length of more than 3 m has been used. Further, in recent years, since the size of the FPD itself has been promoted, a thinner glass substrate is required to meet the demand for preventing the increase in weight. Moreover, this kind of glass substrate has come to be used as a glass substrate for solar cells in addition to the above-mentioned FPD and organic EL illumination.
- the glass substrate when the glass substrate is increased in size and thinned, an extremely large deflection occurs when it is lifted, and tensile stress acts on the convex surface due to the deflection, and the concave surface becomes. Compressive stress acts.
- the glass substrate has a form in which the front surface and the back surface and the end surfaces existing between the outer peripheral ends of both surfaces are connected via a boundary portion, respectively. The stress concentrates on the part. Therefore, when the glass substrate is bent, a large tensile stress is generated around the boundary between the convex surface or back surface and the end surface connected to the surface.
- this kind of glass substrate is made to have a desired size by dividing.
- a scribe line is engraved on the surface of the glass substrate with a diamond chip or the like, and tensile stress is applied to the scribe line.
- splitting in which a glass substrate is cut by applying a force so as to act, is generally employed.
- innumerable minute defects are generated at the boundary between the front and back surfaces and the end surface of the glass substrate after the division, so that the glass substrate is deformed or heat-treated as described above. The probability of breakage increases.
- a chamfered surface is formed by subjecting a boundary portion between the front and back surfaces of the glass substrate and the end surface to a chamfered surface, and a chamfered surface after polishing from the end surface. Smoothing out is disclosed.
- the end surface of the glass substrate is perpendicular to both the front and back surfaces, the surface maximum unevenness of the end surface is 0.05 mm or less, and the surface maximum unevenness of the chamfered surface is 0.007 mm or less. It is described that it is preferable.
- the end surface of the glass substrate is curved outwardly from the outer peripheral ends of both the front and back surfaces, the maximum surface unevenness of the end surface is 0.04 mm or less, and the maximum surface unevenness of the chamfered surface Is preferably 0.007 mm or less.
- the glass substrates disclosed in Patent Documents 1 and 2 are tempered glass, even if a glass substrate that has not been subjected to a tempering process is subjected to a process for forming a chamfered surface as in the same document, the glass substrate. If the glass substrate is bent or has an inappropriate temperature distribution, the glass substrate cannot be reliably prevented from being damaged. That is, it can be said that the chamfered surface described in each document is not a surface property that can be suitably applied to any glass substrate including the glass substrates used for the above-described applications.
- the surface properties of the chamfered surface of the glass substrate described in each document are defined by using the maximum surface unevenness as a parameter, and the surface properties based on such a rule ensure that the glass substrate is not damaged as described above. Cannot be stopped. In other words, it is not optimal to use the maximum surface roughness as a parameter, so even if the surface properties of the chamfered surface satisfy the provisions described in each of the documents, the substrate may be bent or have an inappropriate temperature distribution. Therefore, the glass substrate cannot be dealt with accurately due to the damage of the glass substrate.
- the above-mentioned problems are caused by chamfering by polishing at the boundary portion of a glass substrate divided by using a laser such as laser cleaving other than the above-described splitting of the glass substrate. In the case of formation, it can occur in the same manner.
- the present invention is made by optimizing the surface properties of the boundary surface (chamfered surface) extending from the front surface and the back surface of the glass substrate to the glass substrate, regardless of whether the strengthening treatment is performed or not. It is a technical problem to reliably prevent the occurrence of breakage due to the bending of the glass and the inappropriate temperature distribution, and to solve the problem of glass particles.
- a first invention created to solve the above technical problem is a glass substrate having a front surface and a back surface, and end surfaces existing between outer peripheral ends of the both surfaces, and at least one surface of the front surface and the back surface. and said end face and a chamfered surface is formed at the boundary portion between the ten point average roughness Rz 2 of the chamfered surface is less than ten-point average roughness Rz 1 of the end face, and, crude chamfered surface
- An average length RSm 2 of the roughness curve element is characterized by being larger than an average length RSm 1 of the roughness curve element of the end face.
- the surface roughness is measured using Surfcom 590A manufactured by Tokyo Seimitsu Co., Ltd. (hereinafter the same).
- the ten-point average roughness Rzjis (Rz 1 , Rz 2 ) and the average length RSm (RSm 1 , RSm 2 ) of the roughness curve elements conform to JIS B0601: 2001 (the same applies hereinafter).
- the “chamfered surface” means the surface of the chamfered portion obtained by chamfering the boundary portion (hereinafter the same).
- the ten-point average roughness of the chamfered surface formed at the boundary portion between at least one of the front and back surfaces of the glass substrate and the end surface is smaller than the ten-point average roughness of the end surface.
- the average length of the roughness curve element of the chamfered surface is made larger than the average length of the roughness curve element of the end face.
- the chamfered surface has a ten-point average roughness Rz 2 and an end surface has a ten-point average roughness Rz 1 that satisfies Rz 2 ⁇ 1.5 ⁇ m and 1.5 ⁇ Rz 1 / Rz. It is preferable to satisfy the relationship of 2 ⁇ 10.0.
- Rz 1 / Rz 2 is preferably within the above numerical range.
- the average length RSm 2 of the roughness curve element of the particular polished surface it is preferable to satisfy the relation of RSm 2 ⁇ 100 ⁇ m.
- the ratio of the average lengths of the roughness curve elements is preferably 0.1 or more and 0.7 or less.
- RSm 1 / RSm 2 is preferably within the above numerical range.
- a second invention created in order to solve the above technical problem is a glass substrate having a front surface and a back surface and end surfaces existing between outer peripheral ends of both surfaces, and at least one surface of the front surface and the back surface.
- a chamfered surface is formed at a boundary portion between the first and second end surfaces, and a protruding valley depth Rvk at the chamfered surface satisfies a relationship of Rvk ⁇ 0.95 ⁇ m.
- the protruding valley depth Rvk conforms to JIS B0671-2: 2002 (hereinafter the same).
- the surface property of the chamfered surface formed at the boundary portion of the glass substrate is defined using the protruding valley depth Rvk as a parameter, and the Rvk is equal to 0. Since it is a glass substrate having a chamfered surface defined as 95 ⁇ m or less, the problem of breakage due to bending of the glass substrate and improper temperature distribution and degradation of quality due to glass particles are suppressed as much as possible. That is, the protruding valley depth Rvk is a value indicating how much the portion deeper than the average unevenness of the surface is, and if this value is large, an abnormally deep valley portion exists. become.
- the boundary portion has such an abnormal valley portion, when the tensile stress is generated in the boundary portion due to bending or an inappropriate temperature distribution, the stress concentration is abnormally deep in the valley portion. As a result, breakage is likely to occur, and the glass particles are likely to remain and stay in the abnormally deep valley portion.
- the projecting trough depth Rvk of the chamfered surface formed at the boundary portion is 0.95 ⁇ m or less as described above, there is no abnormally deep trough portion at the boundary portion. The stress concentration is less likely to occur even if acts, and the glass particles are less likely to remain.
- the protruding valley depth Rvk of the chamfered surface formed at the boundary portion is 0.20 ⁇ m or less.
- the protruding valley depth Rvk at the boundary portion of the glass substrate is smaller than the protruding valley depth Rvk of the end surface connected to the chamfered surface of the boundary portion. That is, it has been found that when stress is generated inside the glass substrate due to bending of the glass substrate or an inappropriate temperature distribution, these stresses are most likely to occur near the boundary.
- the protruding valley depth Rvk of the boundary portion is made smaller than the protruding valley depth Rvk of the end face, an abnormally deep valley portion that causes the stress concentration is generated from the boundary portion where stress concentration is likely to occur. It will be reduced. As a result, it is possible to reduce as much as possible the damage caused by the bending of the glass substrate and the inappropriate temperature distribution, and in addition to this, the problem of remaining glass particles is avoided.
- the protruding valley depth Rvk at the end surface of the glass substrate is smaller than the protruding valley depth Rvk of the chamfered surface of the boundary portion, although it becomes an excessive quality from the viewpoint of surface properties, The problem will not be disturbed. And even in the glass substrate which concerns on this 2nd invention, even if it does not perform the reinforcement
- a third invention devised to solve the above technical problem is a glass substrate having a front surface and a back surface, and end surfaces existing between outer peripheral ends of both surfaces, and at least one surface of the front surface and the back surface.
- a chamfered surface is formed at a boundary portion between the surface and the end surface, and the root mean square slope R ⁇ q of the roughness curve on the chamfered surface satisfies the relationship of R ⁇ q ⁇ 0.10.
- the root mean square slope R ⁇ q of the roughness curve conforms to JIS B0601-2001 (the same applies hereinafter).
- the surface property of the chamfered surface formed at the boundary portion of the glass substrate is defined using the root mean square slope R ⁇ q of the roughness curve as a parameter
- the root mean square slope R ⁇ q of the roughness curve is an average value of the slope of each concave portion and each convex portion of the roughness curve with respect to the normal of the surface. This means that there are many concave portions in which the valley bottom has a sharp shape.
- the boundary portion is a chamfered surface having such a property
- stress concentration occurs in the concave portion where the bottom of the valley forms a sharp shape.
- breakage is likely to occur, and the glass particles are liable to remain in the recesses.
- the root mean square slope R ⁇ q of the roughness curve in the chamfered surface formed at the boundary portion as described above is 0.10 or less
- the boundary portion has few concave portions having sharp valley bottoms so as not to cause a problem. For this reason, even if tensile stress acts on the boundary portion, stress concentration is less likely to occur, and the glass particles are less likely to remain.
- the root mean square slope R ⁇ q of the roughness curve on the chamfered surface formed at the boundary is more preferably 0.05 or less.
- the root mean square slope R ⁇ q of the roughness curve at the boundary surface of the glass substrate is smaller than the root mean square slope R ⁇ q of the roughness curve of the end surface connected to the boundary surface. That is, it has been found that when stress is generated inside the glass substrate due to bending of the glass substrate or an inappropriate temperature distribution, these stresses are most likely to occur near the boundary. Therefore, if the root mean square slope R ⁇ q of the roughness curve of the boundary portion is made smaller than the root mean square slope R ⁇ q of the end surface roughness curve, it causes stress concentration from the boundary portion where stress concentration is likely to occur.
- a fourth invention devised to solve the above technical problem is a glass substrate having a front surface and a back surface, and end surfaces existing between the outer peripheral ends of the both surfaces, and at least one surface of the front surface and the back surface.
- a chamfered surface is formed at a boundary portion between the first and second end surfaces, and the maximum valley depth Rv in the chamfered surface satisfies the relationship of Rv ⁇ 2.0 ⁇ m.
- the maximum valley depth Rv conforms to JIS B0601-2001 (the same applies hereinafter).
- the surface property of the chamfered surface formed at the boundary portion of the glass substrate is defined using the maximum valley depth Rv as a parameter, and the Rv is 2.0 ⁇ m. Since the glass substrate has a chamfered surface defined as follows, the problem of breakage due to bending of the glass substrate and an inappropriate temperature distribution and the deterioration of quality caused by glass particles are suppressed as much as possible.
- the chamfered surface has a valley portion having such a depth that tearing develops due to heat or bending tensile stress.
- the glass substrate is not easily damaged, and the glass particles hardly remain in the valleys.
- the maximum valley depth Rv of the chamfered surface formed at the boundary portion is 1.5 ⁇ m or less.
- the maximum valley depth Rv on the chamfered surface of the glass substrate is smaller than the maximum valley depth Rv of the end surface connected to the chamfered surface. That is, it has been found that when stress is generated inside the glass substrate due to bending of the glass substrate or an inappropriate temperature distribution, these stresses are most likely to occur near the boundary.
- the maximum valley depth Rv of the boundary portion (chamfered surface) is made smaller than the maximum valley depth Rv of the end surface, a deep valley portion that causes the stress concentration is generated from the boundary portion where stress concentration easily occurs. It will be reduced or disappeared. As a result, it is possible to reduce as much as possible the damage caused by the bending of the glass substrate and the inappropriate temperature distribution, and in addition to this, the problem of remaining glass particles is avoided.
- the maximum valley depth Rv at the end face of the glass substrate is smaller than the maximum valley depth Rv at the chamfered surface of the boundary portion, although it becomes excessive quality from the viewpoint of surface properties, it is a problem of breakage and glass particles. There will be no hindrance. Even in the glass substrate according to the fourth invention, the above-described advantages can be obtained even if the strengthening process (thermal strengthening process) is not performed or is performed.
- the chamfered surface is preferably formed by a polishing process.
- the surface properties (Rzjis and RSm, second in the first invention) Rvk in the present invention, R ⁇ q in the third invention, and Rv in the fourth invention) can be made uniform. Therefore, a chamfer having a uniform surface property over the entire length in the longitudinal direction at the boundary portion of a single glass substrate. A surface can be formed. In addition, it is possible to form a chamfered surface having the same surface property at each boundary portion for a plurality of glass substrates, regardless of the difference in glass substrates, and to reduce variation in quality. Become.
- the chamfered surface is formed by a polishing process after the end surface is polished.
- the surface properties of the end surface are appropriately improved (Rzjis is reduced and RSm is increased in the first invention, Rvk is reduced in the second invention, In the third invention, R ⁇ q is reduced, and in the fourth invention, Rv is reduced), and then the surface property of the chamfered surface is made better than the surface property of the end surface by forming a chamfered surface by polishing. It is possible to achieve surface properties that can efficiently solve the problem of glass substrate breakage and particles. Therefore, it is an efficient process from the viewpoint of surface properties.
- the end surface can be formed as a flat surface between the outer peripheral ends of the front surface and the back surface.
- the end surface of the glass substrate may be subjected to a polishing process, or a glass substrate that has been divided using a laser, such as laser cutting, is subjected to a polishing process. It does not have to be. That is, when the glass substrate is divided by laser cleaving or the like, the surface properties of the end surface of the glass substrate formed as a flat surface are close to the same surface as the front and back surfaces, so the end surface is polished. Without it, it is sufficient to form a chamfered surface by polishing at the boundary.
- the end surface can be formed as a curved surface that gradually protrudes outward from the outer peripheral ends of the front and back surfaces to the center portion of the plate thickness.
- the connecting portion between the chamfered surface and the end surface and the connecting portion between the chamfered surface and the front surface (or the back surface) can be connected via a gentle bent portion, so that the periphery of the chamfered surface This is advantageous in reducing the tensile stress or stress concentration generated in the case.
- the boundary portion z1 has an uneven shape, and this boundary portion z1 originally exists at the position indicated by the straight line zx, but is actually biased toward the center side of the front surface (or back surface) 2a1. Will exist.
- Such a phenomenon is caused by the fact that the abrasive grains of the grindstone bite into the front surface (or back surface) 2a1 side rather than the straight line zx that should be the original boundary when the end surface 3b1 of the glass substrate 11 is polished.
- the grindstone 6b1 of the grindstone is about 45 ° in the vicinity of the straight line zx that should essentially be the boundary between the front surface (or back surface) 2a1 of the glass substrate 11 and the end surface 3b1. If the contact is made with the inclination, the grinding surface 6b1 of the grindstone is not in contact with the actual boundary portion z1. Therefore, the grindstone cannot polish the uneven boundary portion z1 or can only polish a part of the boundary portion z1, and as a result, the uneven boundary portion z is completely polished.
- the angles ⁇ and ⁇ are preferably set to 45 ° or less. However, when the angles ⁇ and ⁇ are smaller than 10 °, the polishing region on the end surface side when the chamfered surface is formed by polishing becomes narrow. In order to avoid glass chipping or chipping or cracks remaining at the boundary between the end surface and the front surface (or the back surface), the polishing region is on the front surface side (or the back surface side). ) Is required to be widened, resulting in an unfavorable form as a boundary.
- angles ⁇ and ⁇ exceed 30 °, the chamfered surface cannot be formed unless the polishing region on the end surface side is excessively wide when the chamfered surface is formed by polishing. Invite the deterioration. Therefore, if the angles ⁇ and ⁇ are within the above numerical range, these problems do not occur. From such a viewpoint, more preferably, the lower limits of the angles ⁇ and ⁇ are 15 ° and the upper limit is 20 °.
- the plate thickness T preferably satisfies the relationship of 0.05 mm ⁇ T ⁇ 1.1 mm.
- the thickness T of the glass substrate exceeds 1.1 mm, the influence of the thickness T of the glass substrate on the strength of the glass substrate increases, and the stress due to the bending or the inappropriate temperature distribution that leads to the breakage of the glass substrate described above. There is a possibility that the effects unique to the present invention (first to fourth inventions) for combating the above cannot be fully exhibited.
- the plate thickness T of the glass substrate is less than 0.05 mm, it may be difficult to perform an appropriate polishing process on the boundary portion between both the front surface and the back surface. Therefore, if the thickness T of the glass substrate is within the above numerical range, such a problem can be avoided. From these viewpoints, more preferably, the lower limit value of the plate thickness T of the glass substrate is 0.1 mm, and the upper limit value is 0.7 mm.
- the plate thickness T and the width W in the direction perpendicular to the longitudinal direction of the chamfered surface satisfy the relationship of 0.07 ⁇ W / T ⁇ 0.30.
- the chamfered surface of the glass substrate having the above configuration is formed over the entire length of the side.
- an invention of a method created to solve the above technical problem is a method of manufacturing a glass substrate formed with the above-mentioned chamfered surface, and a rotating shaft as a polishing tool for polishing the chamfered surface.
- a rotary polishing tool having a polishing surface orthogonal to the surface, and forming the roughness of the outer peripheral portion of the polishing surface to be smaller than the roughness of the inner peripheral portion, and at least one of the front and back surfaces of the glass substrate;
- the polishing surface (abrasive surface) of the rotary polishing tool is orthogonal to the rotation axis, and the roughness of the outer peripheral portion of the polishing surface is smaller than the roughness of the inner peripheral portion.
- the occurrence of chipping or cracking at the rear end of the chamfered surface due to the vibration of the rotary polishing tool acting on the chamfered surface from the rear end in the moving direction of the polishing surface is suppressed, and due to relative rough polishing.
- the fine grinding powder or glass powder remaining on the chamfered surface is removed.
- a series of polishing processes including fine polishing (relative polishing), relative rough polishing, and final polishing are performed along the relative linear movement of a single rotary polishing tool. Since the chamfered surface can be formed in a short time while suppressing the occurrence of chips and cracks, the device is simplified and the quality around the chamfered surface is improved. Once secured, productivity can be significantly improved.
- either one or both of the rotary polishing tool and the glass substrate may be linearly moved.
- the glass substrate It is advantageous to move the rotating polishing tool in the longitudinal direction of the boundary portion while the tool is fixed on the work table or the like. It is advantageous to move the substrate linearly across the polishing surface.
- the surface property of the chamfered surface can be made suitable by bringing the rotary polishing tool into elastic contact with an elastic body such as a spring and press-contacting the boundary portion of the glass substrate. .
- an invention of a method created to solve the above technical problem is a method of manufacturing a glass substrate formed by forming a chamfered surface after the above-described end surface polishing treatment, and the method is directed to the end surface of the glass substrate.
- the final polishing process is performed, and then, polishing at a boundary portion between at least one of the front surface and the back surface of the glass substrate and the end surface has a finer particle size than the final polishing process.
- the chamfered surface is formed by performing a specific polishing process using a tool.
- the end face of the glass substrate can be polished efficiently in a short time by rough polishing and finish polishing, for example, in a substantially arc-shaped cross section, and the end face is further polished at a finer grain size as subsequent polishing.
- the chamfered surface is formed with a finer-grained polishing tool at the boundary portion, instead of being polished to the same shape with a tool. Therefore, the end face strength can be efficiently improved by optimizing the three kinds of surface properties of the end face, the chamfered face, and the front and back faces.
- a polishing tool for performing rough polishing processing of the end surface preferably, by arranging a polishing tool for performing rough polishing processing of the end surface, a polishing tool for performing final polishing processing of the end surface, and a polishing tool for performing specific polishing processing on the same path,
- Each polishing tool can perform each polishing process while continuously moving relatively linearly, and compared with the case where each process is performed separately, the processing time is greatly reduced and the productivity is improved. It becomes possible to plan.
- the surface property of the chamfered surface is made suitable by bringing the polishing tool for performing the specific polishing treatment into pressure contact with the boundary portion of the glass substrate in a state where the polishing tool is elastically supported using an elastic body such as a spring. can do.
- a chamfered surface is formed at a boundary portion existing between at least one of the front and back surfaces of the glass substrate and the end surface, and the surface properties of the chamfered surface use appropriate parameters. Therefore, even if tensile stress is generated on the chamfered surface due to bending of the glass substrate or an inappropriate temperature distribution, stress that causes cracking or chipping of the glass substrate. Concentration is less likely to occur, the probability of breakage is drastically reduced, and glass particles are less likely to stay and improve the quality of the product.
- FIG. 1 is an enlarged longitudinal sectional view of a main part of the glass substrate 1 according to the present embodiment.
- the glass substrate 1 has a planar surface 2a, an end surface 3 having a convex arcuate cross section, and a planar chamfer formed between the surface 2a and the end surface 3.
- Surface 4 In other words, in the glass substrate 1, the end surface 3 existing between the outer peripheral ends of the front surface 2 a and the back surface, and the front surface 2 a and the back surface are connected via the chamfered surfaces 4, respectively.
- this glass substrate 1 is not subjected to the tempering process (thermal tempering process or the like), the glass substrate 1 may be subjected to the process.
- the end surface 3 of the glass substrate 1 is a polished surface that has been subjected to a final polishing process after being subjected to a rough polishing process
- the surface 2a is a molded surface, that is, an unpolished surface, and is chamfered.
- the surface 4 is a specific polished surface that has been subjected to a specific polishing process after the final polishing process of the end surface 3.
- Ten-point average roughness Rz 2 of the chamfered surface 4 of the glass substrate 1 is smaller than the ten-point average roughness Rz 1 of the end face 3, and an average length RSm 2 of the roughness curve element of the chamfered surface 4, It is made larger than the average length RSm 1 of the roughness curve element of the end face 3.
- the surface 2a since a mirror surface, the average roughness thereof ten-point is smaller than the ten-point average roughness Rz 2 of the chamfered surface 4, and the average length of the roughness curve element chamfer It is larger than the average length RSm 2 of the roughness curve element of 4.
- the ten-point average roughness Rz 2 of the chamfered surface 4 is 1.5 ⁇ m or less, and the ratio Rz 1 / Rz 2 to the ten-point average roughness Rz 1 of the polished surface of the end face 3 is 1 .5 or more and 10.0 or less.
- the average length RSm 2 of the roughness curve element of the chamfered surface 4 is 100 ⁇ m or more, and RSm 1 / RSm 2 , which is a ratio with the average length RSm 1 of the roughness curve element of the end face 3, is 0. .1 or more and 0.7 or less.
- the protruding valley depth Rvk of the chamfered surface 4 of the glass substrate 1 is 0.95 or less (preferably 0.20 or less). Since the surface 2 a is a mirror surface, the protruding valley depth Rvk is smaller than the protruding valley depth Rvk of the chamfered surface 4.
- the root mean square slope R ⁇ q of the roughness curve of the chamfered surface 4 of the glass substrate 1 is 0.10 or less (preferably 0.05 or less). Since the surface 2a is a mirror surface, the root mean square slope R ⁇ q of the roughness curve thereof is smaller than the root mean square slope R ⁇ q of the roughness curve of the chamfered surface 4.
- the maximum valley depth Rv of the chamfered surface 4 of the glass substrate 1 is set to 2.0 ⁇ m or less (preferably 1.5 ⁇ m or less). Since the surface 2 a is a mirror surface, the maximum valley depth Rv is smaller than the maximum valley depth Rv of the chamfered surface 4.
- the angle ⁇ between the tangent line A to the surface 2a side of the chamfered surface 4 and the surface 2a is 10 ° or more and 30 ° or less (18 ° in the present embodiment), and although not shown, the chamfered surface on the back surface also has an angle formed between the tangent to the back surface side and the back surface of 10 ° or more and It is 30 degrees or less (18 degrees in this embodiment).
- the chamfered surface 4 is a periphery of the original boundary portion z that forms a waveform between the surface 2a and the end surface 3 in a state where the polishing process of the end surface 3 has been performed (a periphery of a portion indicated by a broken line in FIG. Is removed by a specific polishing process, and the removed portion has a width W1 from the original boundary z to the end surface 3 side of 70 ⁇ m and a width W2 from the original boundary z to the surface 2a side.
- the region is 30 ⁇ m.
- the angle ⁇ formed between the tangent line B of the original boundary portion z and the surface 2a is 25 ° in the present embodiment.
- the glass substrate 1 has a thickness T of 1.1 mm or less and 0.05 mm or more, and is orthogonal to the width W of the chamfered surface 4 (longitudinal direction of the chamfered surface 4 (direction along the side)).
- W / T which is the ratio of the thickness 2 in the direction parallel to the front surface 2a and the back surface) and the plate thickness T, is set to be 0.07 or more and 0.30 or less.
- the glass substrate 1 having the above-described configuration is manufactured as follows.
- Fig. 2 shows scribing at four locations on the surface of the glass glass after molding by the downdraw method, float method, etc., so that areas with roughly rectangular engraving lines are drawn, and the scribe marks are the starting points.
- a substantially rectangular glass substrate 1 obtained by folding a glass original plate and a polishing tool 5 for polishing the end surface portion 3a of the glass substrate 1 that has been broken are illustrated.
- the end surface portion 3a of the glass substrate 1 is first subjected to a rough polishing process using a first polishing tool, and then a final polishing process using a second polishing tool. As shown in FIG.
- the first polishing tool is a rough polishing rotary grindstone wheel (metal) that is formed by attaching a diamond abrasive grain layer held by a metal bond to an outer peripheral surface having a concave arc shape when viewed from the front. Bond diamond wheel). Then, with the first polishing tool pressed against the end surface portion 3a of the glass substrate 1, the first polishing tool is relatively moved in the longitudinal direction (direction along the side) of the end surface portion 3a of the glass substrate 1. Rough polishing is performed.
- the second polishing tool is a grinding wheel for finishing polishing (resin bond wheel) having the same shape as the first polishing tool, and fine abrasive grains such as silicon carbide bonded to the outer peripheral surface thereof with polyurethane resin or the like.
- the second polishing tool is subjected to a final polishing process by moving in the same manner as described above while being pressed against the end surface of the glass substrate 1 subjected to the rough polishing process.
- the glass substrate 1 has a ten-point average roughness Rzjis of about 1 to 3 ⁇ m, a protruding valley depth Rvk of about 1.0 to 1.5, and a root mean square slope R ⁇ q of the roughness curve of about 0.12 to 0. 20.
- An end surface 3b having a substantially arc-shaped cross section having a maximum valley depth Rv of about 3.0 to 5.0 ⁇ m is formed.
- the formation of the end face 3b of the glass substrate 1 is not limited to the two-stage polishing process as described above, and may be performed by a three-stage or more polishing process.
- the end surface 3b having a substantially arc-shaped cross section is formed on the glass substrate 1, the boundary portion z between the end surface 3b and the surface 2a, and the boundary portion z between the end surface 3b and the back surface 2b,
- the chamfered surface 4 is formed by performing a specific polishing process using the third polishing tool 6.
- the third polishing tool 6 has a flat polishing surface (abrasive surface) 6b orthogonal to the rotation shaft 6a.
- the polishing surface 6b is finer than the second polishing tool. It is made of abrasive grains.
- the glass substrate 1 is set on the upper surface of the work table (surface plate) 7 with the periphery of the end surface 3b protruding.
- the third polishing tool The specific polishing process is performed by relatively moving 6 in the longitudinal direction of the boundary portion z of the glass substrate 1. Thereby, a large number of glass chippings and the like remaining at the boundary z of the glass substrate 1 are removed.
- the angles formed between the polishing surfaces 6b of the two third polishing tools 6 and the front surface 2a and the back surface 2b of the glass substrate 1 are each set to 10 ° or more and 30 ° or less (18 ° in this embodiment). .
- the third polishing tool 6 is a concave portion having a circular central portion, and an inner peripheral side polishing portion 6 ba having a relatively small roughness so as to surround the concave portion, and the roughness Are arranged with a relatively large outer peripheral side polishing portion 6bb, and the boundary portion z of the glass substrate 1 is subjected to a specific polishing treatment by both of the polishing portions 6ba and 6bb. Note that the two third polishing tools 6 are spaced apart from each other in the relative movement direction.
- a chamfered surface 4 is obtained by completely removing the boundary portion z between the surface 2a and the end surface 3 of the glass substrate 1. It is formed.
- the chamfered surface 4 even if a tensile stress caused by the bending of the glass substrate 1 or an inappropriate temperature distribution acts on the chamfered surface 4, no stress concentration occurs on the chamfered surface 4, and the end surface 3 (including the chamfered surface 4) is increased in strength, and the problem of remaining glass particles or glass chipping remaining is also avoided.
- the present invention is applied to the glass substrate 1 in which the end surface 3 is curved outwardly from the outer peripheral ends of the front surface 2a and the back surface 2b, but the end surface 3 is a flat surface (preferably The present invention can be similarly applied to a glass substrate having a flat surface perpendicular to the front and back surfaces.
- the present invention is applied to the glass substrate on which the end surface forming the curved surface that gradually protrudes outward from the outer peripheral edge of the front surface and the back surface to the central portion of the plate thickness.
- the present invention can be similarly applied to a glass substrate in which an end surface forming a flat surface perpendicular to these surfaces is formed between them.
- this invention was applied to the glass substrate formed by dividing
- the present invention can be similarly applied to.
- the polishing process is not performed on the end surface forming the flat surface, and the chamfered surface is formed only by the polishing process on the boundary portion.
- the present invention is applied to a glass substrate for FPD.
- the present invention can also be applied to a glass substrate for organic EL lighting or a solar cell, for example.
- Examples 1a to 1c and Comparative Examples 1a and 1b of the present invention shown in Table 1 below as a sample to be used, a glass original plate having a plate thickness of 700 ⁇ m is split along a scribe mark so as to have a short side dimension. A glass substrate having a length of 1500 mm and a long side dimension of 1800 mm was obtained. Similarly, for Examples 1d and 1e and Comparative Example 1c, as a sample to be used, a glass original plate having a plate thickness of 500 ⁇ m is folded and divided along a scribe mark so that a short side dimension is 550 mm and a long side dimension is Obtained a glass substrate of 670 mm.
- a rough polishing as a first polishing tool having the form shown in FIG. 2 in a state where a glass substrate is placed on a surface plate and fixed by suction.
- the outer peripheral surface of the polishing grindstone (abrasive grain # 400) is brought into pressure contact with the end surface portion of the glass substrate and linearly moved at the grinding speed shown in Table 1 to obtain an end surface portion that is a rough surface having a substantially arc-shaped cross section. Formed.
- the outer peripheral surface of the rotary grindstone for finishing polishing (abrasive grain # 1000) as the second polishing tool having the form shown in FIG.
- the final polishing rotary grindstone (abrasive grain # 1000) as the second polishing tool having the form shown in FIG. ) was pressed into contact with the end surface of the glass substrate after rough polishing to form an end surface that was finished and polished into a substantially circular arc cross section.
- a specific polishing process was performed with a third polishing tool on each boundary portion between the end surface, the front surface, and the back surface of the glass substrate.
- the third polishing tool there was used a flat diamond polishing plate in which diamond abrasive grains were dispersed in a resin material on a circular base.
- size of the abrasive grain shown to Table 1, 2 are based on JISR6001: 1998.
- the angle formed by the front and back surfaces of the glass substrate and the tangent line of the chamfered surface is 18 ° to 22 ° as appropriate.
- a grinding liquid grinding water
- the third polishing tool polishing plate
- it is linearly moved at different grinding speeds as shown in Tables 1 and 2, and near the corner portion.
- a specific polishing treatment was performed over the entire outer periphery of the glass substrate except for. As described above, the glass substrates of Examples 1a to 1c and Examples 1d and 1e were obtained.
- the abrasive grains of the third polishing tool are # 3000, and in Examples 1c and 1e, the abrasive grains of the third polishing tool are # 2000, whereas in Comparative Examples 1a to 1c, Without performing the specific polishing process with the third polishing tool, only the rough polishing process with the first polishing tool and the final polishing process with the second polishing tool were performed on the end surface portion of the glass substrate.
- the moving speed and grinding conditions of the third polishing tool are selected so that the chamfer dimension (chamfer width) is in the range of 60 to 200 ⁇ m, and all the end surfaces of the glass substrate as a sample are selected. A substantially flat chamfered surface was formed at the boundary between the front surface and the back surface.
- a method of forming a chamfered surface at the boundary between the front surface and the back surface of the end surface using the third polishing tool after forming a substantially arc-shaped polished surface on the end surface portion of the glass substrate is installed on the same traveling rail in a state where the glass substrate is sucked and fixed on the surface plate, and simultaneously along the traveling rail. You may make it complete
- the roughness was measured at a measurement length of 5.0 mm using Surfcom 590A manufactured by Tokyo Seimitsu Co., Ltd., and the glass was measured according to JIS B0601: 2001.
- the roughness parameters of the ten-point average roughness Rzjis (Rz 1 , Rz 2 ) and the average length RSm (RSm 1 , RSm 2 ) value of the roughness curve element of the end face and chamfered surface of the substrate were calculated.
- the ten-point average roughness Rz 1 , Rz 2 and the average length RSm 1 , RSm 2 of the roughness curve element were subjected to chamfering treatment on 10 glass substrates under the same conditions, and 10 times for each. Measurements were made and evaluated by calculating the average value. The results are shown in Tables 1 and 2 below.
- the breaking strength was measured by a three-point bending test method using Orientec's Tensilon RTA-250.
- a test piece obtained by cutting out the central part of the side of the end face of the glass substrate into a size of 80 ⁇ 15 mm is used, and the load is applied with the apex of the end face (the apex of the substantially arc of the cross section) facing upward.
- the fracture stress (end face strength) ⁇ was measured by applying the load, measuring the load at the time of breakage, and calculating by the equation shown in the following formula 1.
- P is the breaking load
- L is the distance between fulcrums
- B is the sample width
- h is the glass thickness.
- Examples 1a to 1e of the present invention have a small ten-point average roughness at the boundary between the front surface and the back surface of the end surface of the glass substrate and are close to a mirror surface.
- a chamfered surface having a sufficient width is formed, and the fracture strength (that is, the end surface strength is 160 MPa) is significantly higher than that of a glass substrate having no chamfered surface as in Comparative Examples 1a to 1c. Super).
- the chamfered surface of each example it was confirmed that no level difference or minute cracks at the polishing boundary due to chipping were observed, and that good or extremely good results were exhibited in all of the adhesion of glass particles and the like.
- the glass substrate according to each embodiment of the present invention hardly induces breakage in the post-process, becomes extremely high in strength, and generates very little glass particles due to the end face. Further, even when used in a high-resolution display such as an organic EL, it is possible to effectively suppress a disconnection failure that occurs when a display element or device is formed on a glass substrate.
- the same chamfered surface can be efficiently obtained by appropriately selecting the polishing plate of the polishing tool and setting the grinding conditions. It can be obtained well and the efficiency of the process can be increased.
- each comparative example not only when the moving speed of the polishing tool is 200 mm / sec or 400 mm / sec but also at a low speed of 100 mm / sec, the minimum fracture strength of the end face is relatively low and the strength is low. There is a risk of causing breakage due to the contact of the conveying means to the end face and the concentration of thermal stress.
- the particle value is relatively high and the chipping level difference at the boundary is large, for example, in the process such as cleaning, drying, transporting, and packing, the glass is higher than the chipping part at the boundary. Particles may peel off and adhere to the glass substrate, causing a disconnection failure when forming a display element or device. Therefore, it was confirmed that the glass substrate according to each example of the present invention was extremely excellent in both the breaking strength and the glass particle as compared with the glass substrate according to these comparative examples.
- Examples 2a to 2d and Comparative Examples of the present invention shown in Table 4 below as a sample to be used, a glass original plate having a plate thickness of 700 ⁇ m is scribed and divided into two pieces, whereby the short side dimension is 1500 mm and A glass substrate having a side dimension of 1800 mm was obtained.
- a scribe was made on the surface of the glass original plate with a diamond tip, and a bending moment was applied to the glass original plate so that a tensile stress was generated on the scribe line.
- initial scratches are formed on a part of the glass original plate with a diamond wheel, etc., and this part is irradiated with laser to perform local heating, and then cooled rapidly by blowing a refrigerant. It is also possible to cause the initial crack to progress by cutting the glass original plate.
- the end surface of the glass substrate is a flat surface, and thus has an end surface shape different from those of the glass substrates according to this example and the comparative example.
- a cylindrical grindstone whose outer peripheral surface is a cylindrical surface (in this example and the comparative example, the outer peripheral surface is recessed in a substantially arc shape) is rotated. Polishing of the end surface is performed by moving the shaft relatively linearly in the longitudinal direction of the end surface while rotating while pressing in a state where the shaft is arranged in parallel with the normal direction of the surface of the glass substrate. .
- the grindstone for polishing the end surface of the glass substrate a plurality of types of grindstones having different abrasive grains and binders are prepared. First, the grindstone is rough and the binder is hard, and the grindstone is gradually finer and the binder is softer. Changed to
- a substantially flat chamfered surface was formed by polishing at the boundary between the end surface and the front surface (back surface) of the glass substrate that had been subjected to the end surface polishing treatment.
- the grindstone used for chamfered surface polishing is finer in abrasive grains and softer in binder than the grindstone for polishing the end face described above.
- the surface pressed against the chamfered surface may be a cylindrical surface or a conical surface, or may be a substantially flat circular end surface or an annular end surface.
- the surface of the polishing cloth which fixed the grain may be sufficient.
- Example 2a shown in Table 4 below will be described specifically.
- the first polishing tool having the form shown in FIG. 2 in a state where the divided glass substrate is placed on the surface plate and fixed by suction.
- a rough grinding rotary grindstone # 400 abrasive grains fixed by metal bond
- the outer peripheral surface is linearly moved while being pressed against the end surface portion of the glass substrate, so that the end surface portion is a rough surface having a substantially arc-shaped cross section. Formed.
- the outer peripheral surface of the final polishing rotary grindstone (# 1000 abrasive grains fixed by resin bond) as the second polishing tool having the form shown in FIG. 2 is used as the end surface portion after rough polishing of the glass substrate.
- An end face that was finished and polished into a substantially arc shape in cross section was formed by linearly moving while pressing. Thereafter, a specific polishing process was performed with a third polishing tool on each boundary portion between the end surface, the front surface, and the back surface of the glass substrate.
- a specific polishing process was performed with a third polishing tool on each boundary portion between the end surface, the front surface, and the back surface of the glass substrate.
- the third polishing tool a flat diamond polishing plate obtained by dispersing diamond abrasive grains (# 3000 abrasive grains) in a resin material on a circular base was used.
- the angle formed by the front and back surfaces of the glass substrate and the tangent line of the chamfered surface is 18 ° to 22 ° as appropriate.
- Example 2a After adjusting the angle of the 3 polishing tool, a grinding liquid (grinding water) was supplied to the contact surface between the third polishing tool and the glass substrate. Then, while rotating the third polishing tool (polishing plate) at a peripheral speed of 2000 m / min so as to obtain a desired chamfered surface width dimension, it extends over the entire outer periphery excluding the vicinity of the corner portion in plan view of the glass substrate. Specific polishing treatment was performed. As described above, a glass substrate of Example 2a was obtained. In addition, the size of the above-mentioned abrasive grains conforms to JIS R6001: 1998. In this case, about Example 2b, 2c, 2d and a comparative example, the abrasive grain of the 1st, 2nd, 3rd polishing tool is different from Example 2a, respectively.
- a grinding liquid grinding water
- the protrusion valley depth Rvk of the chamfered surface of the glass substrate and the protrusion valley depth Rvk of the end face shown in Table 4 below are measured over a measurement length of 5.0 mm using a surfcom 590A manufactured by Tokyo Seimitsu Co., Ltd. The measurement was performed, and the value of each Rvk was calculated according to JIS B0601: 2001. Each of these two types of protruding valley depth Rvk was evaluated by measuring the chamfered surface on 10 glass substrates under the same conditions for each of the 10 glass substrates, measuring them 10 times, and calculating an average value thereof. did.
- the maximum cross-sectional height Pt of the end surface of the glass substrate and the maximum cross-sectional height Pt of the chamfered surface were determined.
- the strength of the end face of the glass substrate was determined as a measure of the ease with which the glass substrate was bent or damaged by thermal stress.
- the fracture strength was measured by a three-point bending test method using Orientsil's Tensilon RTA-250, and this was used as the end face strength.
- a test piece obtained by cutting the center part of the end face part of the glass substrate into a size of 80 ⁇ 15 mm is used, and a load is applied with the apex of the end face part (vertical arc of the cross section) facing upward. Then, the load at the time of breakage was measured, and the fracture stress (end surface strength) ⁇ was measured by calculating with the above-described equation (1).
- Table 4 below shows the protruding valley depth Rvk of the chamfered surface, the end surface strength, the maximum cross-sectional height Pt of the chamfered surface, and the maximum cross-sectional height Pt of the end surface obtained as described above.
- the maximum cross-sectional height Pt of the end face and the maximum cross-sectional height Pt of the chamfered surface correspond to the maximum height Rmax in JIS B0601: 1982. It can be considered that it corresponds to unevenness.
- the maximum height Pt of the chamfered surface of the glass substrate of the comparative example is 5.57 ⁇ m and 7 ⁇ m (0.007 mm) or less, and the maximum height Pt of the end surface is 7.44 ⁇ m. Since it is 40 ⁇ m (0.04 mm) or less, the conditions of the numerical ranges described in Patent Documents 1 and 2 are satisfied.
- the present inventors have confirmed that the glass substrate according to this comparative example is frequently damaged in the manufacturing process of FPD, organic EL, solar cell and the like. This means that the glass substrate according to the comparative example has insufficient end face strength. Considering this, it can be understood that the end face strength needs to be 160 MPa. And, in Examples 2a to 2d of the present invention, the end face strength exceeds 160 MPa because the protruding valley depth Rvk of the chamfered surface is 0.95 or less, and the end face strength is sufficient. I can grasp.
- the protrusion valley depth Rvk of the chamfered surface of the glass substrate to be 0.95 or less suppresses the generation of tensile stress due to the bending of the glass substrate and the inappropriate temperature distribution, thereby enabling stress concentration. It can be confirmed that there is a great significance in reducing the amount of damage and preventing breakage of the glass substrate.
- the glass substrate divided by laser cutting the glass original plate is close to a mirror surface as in the case of the front and back surfaces, the surface property of the flat surface of the glass substrate is similar to the above on the boundary portion of the glass substrate. Even when a chamfered surface is formed, if the projecting valley depth Rvk of the chamfered surface is 0.95 or less, a result equal to or better than the good results shown in Table 4 above can be obtained. I can guess.
- the inventors of the present invention compared the Examples 3a to 3d of the present invention with the comparative example. This was performed as shown below.
- OA-10 manufactured by Nippon Electric Glass Co., Ltd. (not subjected to strengthening treatment) formed by the overflow downdraw method was used as a glass original plate.
- Examples 3a to 3d and Comparative Examples of the present invention shown in Table 5 below as a sample to be used, a short side dimension of 1500 mm and a long length was obtained by putting a scribe into a glass original plate having a plate thickness of 700 ⁇ m and splitting it. A glass substrate having a side dimension of 1800 mm was obtained. As a specific method for dividing the glass original plate, a scribe was made on the surface of the glass original plate with a diamond tip, and a bending moment was applied to the glass original plate so that a tensile stress was generated on the scribe line.
- initial scratches are formed on a part of the glass original plate with a diamond wheel, etc., and this part is irradiated with laser to perform local heating, and then cooled rapidly by blowing a refrigerant. It is also possible to cause the initial crack to progress by cutting the glass original plate.
- the end surface of the glass substrate is a flat surface, and thus has an end surface shape different from those of the glass substrates according to the examples and comparative examples.
- a cylindrical grindstone whose outer peripheral surface is a cylindrical surface (in this example and the comparative example, the outer peripheral surface is recessed in a substantially arc shape) is rotated. Polishing of the end surface is performed by moving the shaft relatively linearly in the longitudinal direction of the end surface while rotating while pressing in a state where the shaft is arranged in parallel with the normal direction of the surface of the glass substrate. .
- the grindstone for polishing the end surface of the glass substrate a plurality of types of grindstones having different abrasive grains and binders are prepared. First, the grindstone is rough and the binder is hard, and the grindstone is gradually finer and the binder is softer. Changed to
- a substantially flat chamfered surface was formed by polishing at the boundary between the end surface and the front surface (back surface) of the glass substrate that had been subjected to the end surface polishing treatment.
- the grindstone used for chamfered surface polishing is finer in abrasive grains and softer in binder than the grindstone for polishing the end face described above.
- the surface pressed against the chamfered surface may be a cylindrical surface or a conical surface, or may be a substantially flat circular end surface or an annular end surface.
- the surface of the polishing cloth which fixed the grain may be sufficient.
- Example 3a shown in Table 5 below will be described in detail.
- the first polishing tool having the form shown in FIG. 2 in a state where the divided glass substrate is placed on a surface plate and fixed by suction.
- a rough grinding rotary grindstone # 400 abrasive grains fixed by metal bond
- the outer peripheral surface is linearly moved while being pressed against the end surface portion of the glass substrate, so that the end surface portion is a rough surface having a substantially arc-shaped cross section. Formed.
- the outer peripheral surface of the final polishing rotary grindstone (# 1000 abrasive grains fixed by resin bond) as the second polishing tool having the form shown in FIG. 2 is used as the end surface portion after rough polishing of the glass substrate.
- An end face that was finished and polished into a substantially arc shape in cross section was formed by linearly moving while pressing. Thereafter, a specific polishing process was performed with a third polishing tool on each boundary portion between the end surface, the front surface, and the back surface of the glass substrate.
- a specific polishing process was performed with a third polishing tool on each boundary portion between the end surface, the front surface, and the back surface of the glass substrate.
- the third polishing tool a flat diamond polishing plate obtained by dispersing diamond abrasive grains (# 3000 abrasive grains) in a resin material on a circular base was used.
- the angle formed by the front and back surfaces of the glass substrate and the tangent line of the chamfered surface is 18 ° to 22 ° as appropriate.
- Example 3a After adjusting the angle of the 3 polishing tool, a grinding liquid (grinding water) was supplied to the contact surface between the third polishing tool and the glass substrate. Then, while rotating the third polishing tool (polishing plate) at a peripheral speed of 2000 m / min so as to obtain a desired chamfered surface width dimension, it extends over the entire outer periphery excluding the vicinity of the corner portion in plan view of the glass substrate. Specific polishing treatment was performed. As described above, a glass substrate of Example 3a was obtained. In addition, the size of the above-mentioned abrasive grains conforms to JIS R6001: 1998. In this case, about Example 3b, 3c, 3d and a comparative example, the abrasive grain of a 1st, 2nd, 3rd polishing tool is different from Example 3a, respectively.
- a grinding liquid grinding water
- the root mean square slope R ⁇ q of the chamfered surface roughness curve and the root mean square slope R ⁇ q of the end surface roughness curve of the glass substrate shown in Table 5 below were measured using a Surfcom 590A manufactured by Tokyo Seimitsu Co., Ltd. The roughness was measured over 0 mm, and the value of each R ⁇ q was calculated according to JIS BO601: 2001.
- Each of these two types of root-mean-square slope R ⁇ q was evaluated by measuring a chamfered surface on 10 glass substrates under the same conditions for each of them, measuring them 10 times, and calculating the average value. .
- the maximum cross-sectional height Pt of the end surface of the glass substrate and the maximum cross-sectional height Pt of the chamfered surface were determined.
- the strength of the end face of the glass substrate was determined as a measure of the ease with which the glass substrate is bent or damaged by thermal stress.
- the fracture strength was measured by a three-point bending test method using Orientsil's Tensilon RTA-250, and this was used as the end face strength.
- a test piece obtained by cutting the center part of the side of the end face of the glass substrate into a size of 80 ⁇ 15 mm is used, and a load is applied with the apex of the end face (vertical arc of the cross section) facing upward. Then, the load at the time of breakage was measured, and the fracture stress (end surface strength) ⁇ was measured by calculating with the above-described equation (1).
- Table 5 below shows the root mean square slope R ⁇ q of the chamfered surface, the end surface strength, the maximum cross-sectional height Pt of the chamfered surface, and the maximum cross-sectional height Pt of the end surface obtained as described above.
- the maximum cross-sectional height Pt of the end surface and the maximum cross-sectional height Pt of the chamfered surface are JIS Since it corresponds to the maximum height Rmax in B0601: 1982, it can be considered that it corresponds to the maximum surface unevenness of Patent Documents 1 and 2 described above.
- the maximum height Pt of the chamfered surface of the glass substrate of the comparative example is 5.57 ⁇ m and 7 ⁇ m (0.007 mm) or less, and the maximum height Pt of the end surface is 7.44 ⁇ m. Since it is 40 ⁇ m (0.04 mm) or less, the conditions of the numerical ranges described in Patent Documents 1 and 2 are satisfied.
- the present inventors have confirmed that the glass substrate according to this comparative example is frequently damaged in the manufacturing process of FPD, organic EL, solar cell and the like. This means that the glass substrate according to the comparative example has insufficient end face strength. Considering this, it can be understood that the end face strength needs to be 160 MPa. In Examples 3a to 3d of the present invention, the root mean square slope R ⁇ q of the chamfered surface is 0.10 or less, so that the end face strength exceeds 160 MPa, and it is understood that the end face strength is sufficient. it can.
- the glass substrate divided by laser cutting the glass original plate is close to a mirror surface as in the case of the front and back surfaces, the surface property of the flat surface of the glass substrate is similar to the above on the boundary portion of the glass substrate. Even when a chamfered surface is formed, if the root mean square slope R ⁇ q of the chamfered surface is 0.10 or less, it is estimated that a result equal to or better than the good results shown in Table 5 above can be obtained. it can.
- the present inventors show the comparison between Examples 4a to 4d of the present invention and the comparative example. It was done like that.
- OA-10 manufactured by Nippon Electric Glass Co., Ltd. (not subjected to strengthening treatment) formed by the overflow downdraw method was used as a glass original plate.
- Examples 4a to 4d and Comparative Examples of the present invention shown in Table 6 below as a sample to be used, a short side dimension of 1500 mm and a long length was obtained by putting a scribe into a glass original plate having a plate thickness of 700 ⁇ m and splitting it. A glass substrate having a side dimension of 1800 mm was obtained. As a specific method for dividing the glass original plate, a scribe was made on the surface of the glass original plate with a diamond tip, and a bending moment was applied to the glass original plate so that a tensile stress was generated on the scribe line.
- initial scratches are formed on a part of the glass original plate with a diamond wheel, etc., and this part is irradiated with laser to perform local heating, and then cooled rapidly by blowing a refrigerant. It is also possible to cause the initial crack to progress by cutting the glass original plate.
- the end surface of the glass substrate is a flat surface, and thus has an end surface shape different from those of the glass substrates according to the examples and comparative examples.
- a cylindrical grindstone whose outer peripheral surface is a cylindrical surface (in this example and the comparative example, the outer peripheral surface is recessed in a substantially arc shape) is rotated. Polishing of the end surface is performed by moving the shaft relatively linearly in the longitudinal direction of the end surface while rotating while pressing in a state where the shaft is arranged in parallel with the normal direction of the surface of the glass substrate. .
- the grindstone for polishing the end surface of the glass substrate a plurality of types of grindstones having different abrasive grains and binders are prepared. First, the grindstone is rough and the binder is hard, and the grindstone is gradually finer and the binder is softer. Changed to
- a substantially flat chamfered surface was formed by polishing at the boundary between the end surface and the front surface (back surface) of the glass substrate that had been subjected to the end surface polishing treatment.
- the grindstone used for chamfered surface polishing is finer in abrasive grains and softer in binder than the grindstone for polishing the end face described above.
- the surface pressed against the chamfered surface may be a cylindrical surface or a conical surface, or may be a substantially flat circular end surface or an annular end surface.
- the surface of the polishing cloth which fixed the grain may be sufficient.
- Example 4a shown in Table 6 below will be described specifically.
- the first polishing tool having the form shown in FIG. 2 in a state where the divided glass substrate is placed on a surface plate and fixed by suction.
- a rough grinding rotary grindstone # 400 abrasive grains fixed by metal bond
- the outer peripheral surface is linearly moved while being pressed against the end surface portion of the glass substrate, so that the end surface portion is a rough surface having a substantially arc-shaped cross section. Formed.
- the outer peripheral surface of the final polishing rotary grindstone (# 1000 abrasive grains fixed by resin bond) as the second polishing tool having the form shown in FIG. 2 is used as the end surface portion after rough polishing of the glass substrate.
- An end face that was finished and polished into a substantially arc shape in cross section was formed by linearly moving while pressing. Thereafter, a specific polishing process was performed with a third polishing tool on each boundary portion between the end surface, the front surface, and the back surface of the glass substrate.
- a specific polishing process was performed with a third polishing tool on each boundary portion between the end surface, the front surface, and the back surface of the glass substrate.
- the third polishing tool a flat diamond polishing plate obtained by dispersing diamond abrasive grains (# 3000 abrasive grains) in a resin material on a circular base was used.
- the angle formed by the front and back surfaces of the glass substrate and the tangent line of the chamfered surface is 18 ° to 22 ° as appropriate.
- Example 4a After adjusting the angle of the 3 polishing tool, a grinding liquid (grinding water) was supplied to the contact surface between the third polishing tool and the glass substrate. Then, while rotating the third polishing tool (polishing plate) at a peripheral speed of 2000 m / min so as to obtain a desired chamfered surface width dimension, it extends over the entire outer periphery excluding the vicinity of the corner portion in plan view of the glass substrate. Specific polishing treatment was performed. As described above, a glass substrate of Example 4a was obtained. In addition, the size of the above-mentioned abrasive grains conforms to JIS R6001: 1998. In this case, about Example 4b, 4c, 4d and a comparative example, the abrasive grain of the 1st, 2nd, 3rd polishing tool is different from Example 4a, respectively.
- a grinding liquid grinding water
- the maximum valley depth Rv of the chamfered surface in the glass substrate shown in Table 6 below is measured with a surfcom 590A manufactured by Tokyo Seimitsu Co., Ltd., and the roughness is measured over a measurement length of 5.0 mm, according to JIS B0601: 2001. The value was calculated.
- This maximum valley depth Rv was evaluated by measuring 10 times of chamfered surfaces on 10 glass substrates under the same conditions and calculating an average value thereof.
- the maximum cross-sectional height Pt of the end surface of the glass substrate and the maximum cross-sectional height Pt of the chamfered surface were determined.
- the strength of the end face of the glass substrate was determined as a measure of the ease with which the glass substrate is bent or damaged by thermal stress.
- the fracture strength was measured by a three-point bending test method using Orientsil's Tensilon RTA-250, and this was used as the end face strength.
- a test piece obtained by cutting the center part of the side of the end face of the glass substrate into a size of 80 ⁇ 15 mm is used, and a load is applied with the apex of the end face (vertical arc of the cross section) facing upward. Then, the load at the time of breakage was measured, and the fracture stress (end surface strength) ⁇ was measured by calculating with the above-described equation (1).
- Table 6 below shows the maximum chamfer depth Rv, end face strength ⁇ , maximum cross section height Pt of the chamfered face, and maximum cross section height Pt of the end face obtained as described above.
- the maximum cross-sectional height Pt of the end surface and the maximum cross-sectional height Pt of the chamfered surface are JIS Since it corresponds to the maximum height Rmax in B0601: 1982, it can be considered that it corresponds to the maximum surface unevenness of Patent Documents 1 and 2 described above.
- the maximum height Pt of the chamfered surface is 5.57 ⁇ m and 7 ⁇ m (0.007 mm) or less, and the maximum height Pt of the end surface is 7.44 ⁇ m. Since it is 40 ⁇ m (0.04 mm) or less, the conditions of the numerical ranges described in Patent Documents 1 and 2 are satisfied.
- the present inventors have confirmed that the glass substrate according to this comparative example is frequently damaged in the manufacturing process of FPD, organic EL, solar cell and the like. This means that the glass substrate according to the comparative example has insufficient end face strength. Considering this, it can be understood that the end face strength needs to be 160 MPa. In Examples 4a to 4d of the present invention, it is understood that the end face strength exceeds 160 MPa because the maximum valley depth Rv of the chamfered surface is 2.0 ⁇ m or less, and the end face strength is sufficient. it can.
- the maximum valley depth Rv of the chamfered surface of the glass substrate to be 2.0 ⁇ m or less suppresses the generation of tensile stress due to the bending of the glass substrate or an inappropriate temperature distribution, thereby allowing stress concentration as much as possible. It was confirmed that there was a great significance in reducing the glass substrate and preventing breakage of the glass substrate.
- the glass substrate divided by laser cutting the glass original plate is close to a mirror surface as in the case of the front and back surfaces, the surface property of the flat surface of the glass substrate is similar to the above on the boundary portion of the glass substrate. Even when a chamfered surface is formed, if the maximum valley depth Rv of the chamfered surface is 2.0 ⁇ m or less, it is estimated that a result equal to or better than the good results shown in Table 6 above can be obtained. it can.
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Abstract
Description
本発明は、表面および裏面と、それら両面の外周端相互間に存する端面との間の境界部について、その面性状を適正化してなるガラス基板およびその製造方法に関する。 The present invention relates to a glass substrate formed by optimizing the surface properties of a boundary portion between a front surface and a back surface and end surfaces existing between outer peripheral ends of both surfaces, and a manufacturing method thereof.
周知のように、近年における画像(映像)表示装置は、液晶ディスプレイ(LCD)、プラズマディスプレイ(PDP)、フィールドエミッションディスプレイ(FED)、有機ELディスプレイ(OLED)などに代表されるフラットパネルディスプレイ(FPD)が主流となっている。また、有機ELは、OLEDのように微細な三原色をTFTにより明滅させず、単色(例えば白色)のみで発光させてLCDのバックライトや屋内照明の光源などの平面光源としても利用されつつある。 As is well known, image (video) display devices in recent years are flat panel displays (FPD) represented by a liquid crystal display (LCD), a plasma display (PDP), a field emission display (FED), an organic EL display (OLED), and the like. ) Is the mainstream. In addition, organic EL is being used as a planar light source such as a backlight of an LCD or a light source for indoor lighting by causing only three colors (for example, white) to emit light without causing the three primary colors to be flickered by a TFT unlike OLED.
これらのFPDや照明は何れも、ガラス基板の表面に、それぞれの素子や配線を含む種々の構成物を付設等し且つ組み合わせることにより構成される。特に、FPDは、生産性効率化の観点から、一枚の大型のガラス基板上に複数個のFPD用パネル素子などを形成し、最終的にそれらを適宜分割して個々のFPD用ガラスパネルとする所謂マルチ採りが行われている。このマルチ採りは、ガラス基板が大型化するに連れて効率が向上することから、一辺の長さが3mを超えるガラス基板が使用されるに至っている。更に、近年においては、FPD自体の大型化が推進されていることから、その重量増を阻止する要請に応じるために、ガラス基板としては、より薄肉のものが必要となっている。また、この種のガラス基板は、上述のFPDや有機EL照明以外に、太陽電池のガラス基板としても利用されるに至っている。 These FPDs and illuminations are each configured by attaching and combining various components including respective elements and wirings on the surface of the glass substrate. In particular, from the viewpoint of improving productivity, FPD is formed by forming a plurality of FPD panel elements on a single large glass substrate, and finally dividing them appropriately to obtain individual FPD glass panels. So-called multi-taking is performed. Since this multi-collection improves the efficiency as the glass substrate becomes larger, a glass substrate having a side length of more than 3 m has been used. Further, in recent years, since the size of the FPD itself has been promoted, a thinner glass substrate is required to meet the demand for preventing the increase in weight. Moreover, this kind of glass substrate has come to be used as a glass substrate for solar cells in addition to the above-mentioned FPD and organic EL illumination.
そして、これらのFPD、有機EL照明、および太陽電池の製造工程においては、ガラス基板を例えば定盤から持ち上げる工程や熱処理する工程が存在しており、これらの工程でガラス基板を持ち上げる際には、次に示すような問題が生じる。 And in the manufacturing process of these FPD, organic EL lighting, and solar cell, for example, there is a step of lifting the glass substrate from the surface plate and a step of heat treatment. When lifting the glass substrate in these steps, The following problems arise.
すなわち、ガラス基板は、そのサイズが大型化し且つ薄肉化が進むと、持ち上げ時に極めて大きな撓みが生じ、その撓みに起因して凸になる面には引張り応力が作用すると共に、凹になる面には圧縮応力が作用する。その場合、ガラス基板は、表面および裏面と、これら両面の外周端相互間に存する端面とが、それぞれ境界部を介して連なる形態を有するが、ガラス基板が撓んだ場合には、上述の境界部に当該応力が集中する。したがって、ガラス基板が撓んだ際には、凸になる表面または裏面とその面に連接された端面との境界部周辺に大きな引っ張り応力が生じる。そのため、ガラス基板の表裏両面と端面とのそれぞれの境界部周辺に、傷やクラック或いは異物などの微小欠陥が存在していると、ガラス基板が撓んだ際に当該欠陥付近に大きな引張り応力が生じると共に当該欠陥に応力集中が発生し、微小欠陥が拡大して一挙にガラス基板を破損に至らしめる。 That is, when the glass substrate is increased in size and thinned, an extremely large deflection occurs when it is lifted, and tensile stress acts on the convex surface due to the deflection, and the concave surface becomes. Compressive stress acts. In that case, the glass substrate has a form in which the front surface and the back surface and the end surfaces existing between the outer peripheral ends of both surfaces are connected via a boundary portion, respectively. The stress concentrates on the part. Therefore, when the glass substrate is bent, a large tensile stress is generated around the boundary between the convex surface or back surface and the end surface connected to the surface. Therefore, if there are minute defects such as scratches, cracks, or foreign objects around the boundary between the front and back surfaces and the end surface of the glass substrate, a large tensile stress is generated near the defect when the glass substrate is bent. At the same time, stress concentration occurs in the defect, and the micro defect expands to break the glass substrate all at once.
上述のガラス基板の熱処理工程においても、これと同様の問題が生じる。すなわち、ガラス基板は、温度上昇に伴って膨張すると共に温度低下に伴って収縮するが、熱処理工程でガラス基板に不当な温度分布が生じると、一枚のガラス基板内に、膨張と収縮が生じて引張り応力と圧縮応力とが混在することになる。その場合に、ガラス基板の表裏両面と端面との境界部周辺に微小欠陥が存在し且つ当該境界部に引っ張り応力が生じると、その微小欠陥に応力集中が発生し、ガラス基板を破損に至らしめる。 The same problem occurs in the above-described heat treatment process of the glass substrate. That is, a glass substrate expands with a rise in temperature and shrinks with a decrease in temperature. However, if an inappropriate temperature distribution occurs in the glass substrate in the heat treatment process, expansion and contraction occur in one glass substrate. Thus, tensile stress and compressive stress are mixed. In that case, if a micro defect exists in the vicinity of the boundary between the front and back surfaces of the glass substrate and the end surface and a tensile stress is generated in the boundary, stress concentration occurs in the micro defect, leading to breakage of the glass substrate. .
ところで、この種のガラス基板は、分割することにより所望の大きさとされるが、その分割方法としては、ガラス基板の表面にダイヤモンドチップ等でスクライブ線を刻設し、そのスクライブ線に引張り応力が作用するように力を加えて、ガラス基板を割断する所謂折割りが一般的に採用されている。このような分割方法では、分割後のガラス基板の表裏両面と端面との境界部に、無数の微小欠陥が生じることになるので、上述のようにガラス基板の撓み時や熱処理時に当該ガラス基板が破損する確率が高くなる。 By the way, this kind of glass substrate is made to have a desired size by dividing. As a dividing method, a scribe line is engraved on the surface of the glass substrate with a diamond chip or the like, and tensile stress is applied to the scribe line. So-called splitting, in which a glass substrate is cut by applying a force so as to act, is generally employed. In such a dividing method, innumerable minute defects are generated at the boundary between the front and back surfaces and the end surface of the glass substrate after the division, so that the glass substrate is deformed or heat-treated as described above. The probability of breakage increases.
このような問題に対処すべく、特許文献1、2によれば、ガラス基板の表裏両面と端面との境界部に研磨処理を施して面取り面を形成すると共に、端面よりも研磨後の面取り面を滑らかにすることが開示されている。詳しくは、特許文献1によれば、ガラス基板の端面は表裏両面に対して直角であって、その端面の表面最大凹凸が0.05mm以下で且つ面取り面の表面最大凹凸が0.007mm以下であることが好ましいと記載されている。また、特許文献2によれば、ガラス基板の端面が、表裏両面の外周端から湾曲して外方に突出しており、その端面の表面最大凹凸が0.04mm以下で且つ面取り面の表面最大凹凸が0.007mm以下であることが好ましいと記載されている。
According to
しかしながら、特許文献1、2に開示されたガラス基板は、強化ガラスであるため、強化処理を施していないガラス基板に、同各文献と同様に面取り面を形成する処理を行っても、ガラス基板に撓みや不当な温度分布が生じた場合に、ガラス基板の破損の招来を確実に回避することはできない。すなわち、同各文献に記載された面取り面は、上記列挙した用途に使用されるガラス基板を含めて、どのようなガラス基板であっても好適に適用できるとういう面性状ではないと言える。
However, since the glass substrates disclosed in
しかも、同各文献に記載されたガラス基板の面取り面の面性状は、表面最大凹凸をパラメータとして規定したものであり、このような規定に基づく面性状では、上述の如きガラス基板の破損を確実に阻止することはできない。すなわち、表面最大凹凸をパラメータとすること自体が最適であるとは言えないため、面取り面の面性状が同各文献に記載の規定を満たしていたとしても、基板の撓みや不当な温度分布に起因するガラス基板の破損に対しては的確に対処し得ないことになる。 In addition, the surface properties of the chamfered surface of the glass substrate described in each document are defined by using the maximum surface unevenness as a parameter, and the surface properties based on such a rule ensure that the glass substrate is not damaged as described above. Cannot be stopped. In other words, it is not optimal to use the maximum surface roughness as a parameter, so even if the surface properties of the chamfered surface satisfy the provisions described in each of the documents, the substrate may be bent or have an inappropriate temperature distribution. Therefore, the glass substrate cannot be dealt with accurately due to the damage of the glass substrate.
更に、同各文献にて規定された面取り面の面性状であれば、端面の研磨時に発生してガラス基板の表面に付着したガラスパーティクル等が、洗浄工程において、面取り面に滞留し易いという不具合をも招きかねない。そして、これが原因となって、乾燥工程において、ガラスパーティクル等が、ガラス基板の表面に付着した状態となり、ガラス基板の品位低下という致命的な欠陥をも招来する。 Furthermore, if the surface properties of the chamfered surface specified in the same document, glass particles, etc. generated during the polishing of the end surface and adhering to the surface of the glass substrate are likely to stay on the chamfered surface in the cleaning process. May also be invited. Due to this, in the drying process, glass particles and the like are attached to the surface of the glass substrate, which causes a fatal defect that the quality of the glass substrate is deteriorated.
なお、以上のような問題は、ガラス基板の分割が既述の折割りによるもの以外、例えばレーザー割断等のようにレーザーを使用して分割されたガラス基板についてその境界部に研磨による面取り面を形成した場合においても、同様にして生じ得る。 In addition, the above-mentioned problems are caused by chamfering by polishing at the boundary portion of a glass substrate divided by using a laser such as laser cleaving other than the above-described splitting of the glass substrate. In the case of formation, it can occur in the same manner.
そして、以上のような問題到来のおそれが否めないにも拘わらず、従来においては、その面性状を適切に規定するための具体的手段については、最適なものが見出されていないのが実情である。 In spite of the unavoidable possibility of the above problems, the actual situation is that no optimum means has been found in the past as a specific means for appropriately defining the surface properties. It is.
本発明は、上記事情に鑑み、ガラス基板の表面および裏面から端面に跨る境界面(面取り面)の面性状を適正化させることにより、強化処理が施されているか否かに拘わらず、ガラス基板の撓みや不当な温度分布に起因する破損の発生を確実に防止すると共に、ガラスパーティクルの問題をも解消することを技術的課題とする。 In view of the above circumstances, the present invention is made by optimizing the surface properties of the boundary surface (chamfered surface) extending from the front surface and the back surface of the glass substrate to the glass substrate, regardless of whether the strengthening treatment is performed or not. It is a technical problem to reliably prevent the occurrence of breakage due to the bending of the glass and the inappropriate temperature distribution, and to solve the problem of glass particles.
上記技術的課題を解決するために創案された第1の発明は、表面および裏面と、その両面の外周端の相互間に存する端面とを有するガラス基板において、前記表面および裏面の少なくとも一方の面と前記端面との間の境界部に面取り面が形成され、該面取り面の十点平均粗さRz2が、前記端面の十点平均粗さRz1よりも小さく、且つ、該面取り面の粗さ曲線要素の平均長さRSm2が、前記端面の粗さ曲線要素の平均長さRSm1よりも大きいことに特徴づけられる。なお、表面粗さについては、東京精密社製サーフコム590Aを用いて測定を行うものとする(以下、同様)。また、ここでは、十点平均粗さRzjis(Rz1、Rz2)および粗さ曲線要素の平均長さRSm(RSm1、RSm2)は、JIS B0601:2001に準拠している(以下、同様)。更に、「面取り面」とは、当該境界部に面取り加工を施して得られる面取り部の表面を意味する(以下、同様)。 A first invention created to solve the above technical problem is a glass substrate having a front surface and a back surface, and end surfaces existing between outer peripheral ends of the both surfaces, and at least one surface of the front surface and the back surface. and said end face and a chamfered surface is formed at the boundary portion between the ten point average roughness Rz 2 of the chamfered surface is less than ten-point average roughness Rz 1 of the end face, and, crude chamfered surface An average length RSm 2 of the roughness curve element is characterized by being larger than an average length RSm 1 of the roughness curve element of the end face. The surface roughness is measured using Surfcom 590A manufactured by Tokyo Seimitsu Co., Ltd. (hereinafter the same). Here, the ten-point average roughness Rzjis (Rz 1 , Rz 2 ) and the average length RSm (RSm 1 , RSm 2 ) of the roughness curve elements conform to JIS B0601: 2001 (the same applies hereinafter). ). Furthermore, the “chamfered surface” means the surface of the chamfered portion obtained by chamfering the boundary portion (hereinafter the same).
このような構成によれば、ガラス基板の表面および裏面の少なくとも一方の面と端面との間の境界部に形成された面取り面の十点平均粗さが、端面の十点平均粗さよりも小さいのみならず、その面取り面の粗さ曲線要素の平均長さが、端面の粗さ曲線要素の平均長さよりも大きくされている。このように、十点平均粗さRzjisおよび粗さ曲線要素の平均長さRSmをパラメータとして、面取り面の面性状と端面の面性状との関係を規定したことにより、当該境界部を起点として欠けやクラックが発生してガラス基板が欠損或いは破損すること、当該境界部からガラス片やガラスパーティクルが剥離除去すること、洗浄工程で当該境界部にガラスパーティクル等が滞留すること、および、乾燥工程でガラスパーティクル等がガラス基板の表面に付着して品位低下を招くこと等の不具合が効果的に回避される。そして、この第1の発明に係るガラス基板は、強化処理(熱強化処理)が施されていなくても、或いは施されていても、上記のような利点を得ることができる。 According to such a configuration, the ten-point average roughness of the chamfered surface formed at the boundary portion between at least one of the front and back surfaces of the glass substrate and the end surface is smaller than the ten-point average roughness of the end surface. Not only that, the average length of the roughness curve element of the chamfered surface is made larger than the average length of the roughness curve element of the end face. Thus, by defining the relationship between the surface properties of the chamfered surface and the surface properties of the chamfered surface using the ten-point average roughness Rzjis and the average length RSm of the roughness curve elements as parameters, the boundary portion is missing as a starting point. Or cracks occur and the glass substrate is lost or damaged, glass pieces or glass particles are peeled and removed from the boundary, glass particles stay in the boundary in the cleaning process, and drying process. Problems such as glass particles adhering to the surface of the glass substrate and degrading the quality are effectively avoided. And the glass substrate which concerns on this 1st invention can acquire the above advantages, even if it does not perform the reinforcement | strengthening process (thermal reinforcement | strengthening process).
この第1の発明において、前記面取り面の十点平均粗さRz2および前記端面の十点平均粗さRz1は、Rz2≦1.5μmであり、且つ、1.5≦Rz1/Rz2≦10.0の関係を満たすことが好ましい。 In the first invention, the chamfered surface has a ten-point average roughness Rz 2 and an end surface has a ten-point average roughness Rz 1 that satisfies Rz 2 ≦ 1.5 μm and 1.5 ≦ Rz 1 / Rz. It is preferable to satisfy the relationship of 2 ≦ 10.0.
このようにすれば、上記の境界部に形成された面取り面の十点平均粗さRz2を1.5μm以下とすることによって、当該境界部を起点とするガラス基板の破損等がより確実に抑止されて端面周辺の破壊強度が上昇すると共に、当該境界部でのガラスパーティクルの発生や滞留等の問題もより一層効果的に回避される。そして、端面の十点平均粗さRz1を面取り面の十点平均粗さで除算した値(Rz1/Rz2)が1.5未満であると、面取り面を形成したことによる端面周辺の破壊強度の上昇効果が少なくなる。これに対して、Rz1/Rz2が10.0を超えると、面取り面と端面との粗さの差が大きくなり、この両面の境界に新たな応力集中による破損が誘起されるおそれがある。したがって、Rz1/Rz2は、上記の数値範囲内にあることが好ましい。 Thus, by the ten-point average roughness Rz 2 of the chamfered surface formed on the boundary portion of the a 1.5μm or less, breakage of the glass substrate as a starting point the boundary is more reliably While being suppressed, the breaking strength around the end face is increased, and problems such as generation and retention of glass particles at the boundary are further effectively avoided. If the value (Rz 1 / Rz 2 ) obtained by dividing the ten-point average roughness Rz 1 of the end face by the ten-point average roughness of the chamfered face is less than 1.5, The effect of increasing the breaking strength is reduced. On the other hand, if Rz 1 / Rz 2 exceeds 10.0, the difference in roughness between the chamfered surface and the end surface increases, and damage due to new stress concentration may be induced at the boundary between both surfaces. . Accordingly, Rz 1 / Rz 2 is preferably within the above numerical range.
また、この第1の発明において、前記特定研磨面の粗さ曲線要素の平均長さRSm2は、RSm2≧100μmの関係を満たすことが好ましい。 Further, in the first invention, the average length RSm 2 of the roughness curve element of the particular polished surface, it is preferable to satisfy the relation of RSm 2 ≧ 100μm.
このようにすれば、当該境界部を起点とするガラス基板の破損等、および当該境界部でのガラスパーティクルの発生や滞留等の問題がより一層効果的に回避される。特に、RSm2≧100μmであることにより、面取り面のうねりの凹凸の間隔(周期)が大きくなり、表面積が抑えられるため、ガラスパーティクルが有効面(表面)に付着するという不具合が効果的に回避される。この場合、粗さ曲線要素の平均長さの比つまりRSm1/RSm2は、0.1以上で且つ0.7以下であることが好ましい。すなわち、RSm1/RSm2が、0.1未満であると、端面と面取り面とのうねりの凹凸の間隔の差が大きくなって、その両者の境界で面性状が急激に変化するため、その境界に新たな破損起点が発生する。これに対して、RSm1/RSm2が、0.7を超えると、端面と面取り部との間で、うねりの凹凸の間隔の差が小さくなり、結論的には面取り面の形成によって凹凸が効率よく除去されていないことになり、破壊強度の上昇効果が不十分となる。したがって、RSm1/RSm2は上記の数値範囲内にあることが好ましい。 In this way, problems such as breakage of the glass substrate starting from the boundary and generation and retention of glass particles at the boundary can be more effectively avoided. In particular, since RSm 2 ≧ 100 μm increases the crevice unevenness interval (cycle) of the chamfered surface and suppresses the surface area, the problem of glass particles adhering to the effective surface (surface) is effectively avoided. Is done. In this case, the ratio of the average lengths of the roughness curve elements, that is, RSm 1 / RSm 2 is preferably 0.1 or more and 0.7 or less. That is, when RSm 1 / RSm 2 is less than 0.1, the difference in the waviness unevenness between the end face and the chamfered surface becomes large, and the surface properties rapidly change at the boundary between the two. A new breakage origin occurs at the boundary. On the other hand, when RSm 1 / RSm 2 exceeds 0.7, the difference between the waviness unevenness between the end face and the chamfered portion becomes small, and as a result, the unevenness is formed by the formation of the chamfered surface. It is not removed efficiently, and the effect of increasing the breaking strength is insufficient. Accordingly, RSm 1 / RSm 2 is preferably within the above numerical range.
上記技術的課題を解決するために創案された第2の発明は、表面および裏面と、その両面の外周端の相互間に存する端面とを有するガラス基板において、前記表面および裏面の少なくとも一方の面と前記端面との間の境界部に面取り面が形成され、該面取り面における突出谷部深さRvkが、Rvk≦0.95μmの関係を満たすことに特徴づけられる。ここで、突出谷部深さRvkは、JIS B0671-2:2002に準拠している(以下、同様)。 A second invention created in order to solve the above technical problem is a glass substrate having a front surface and a back surface and end surfaces existing between outer peripheral ends of both surfaces, and at least one surface of the front surface and the back surface. A chamfered surface is formed at a boundary portion between the first and second end surfaces, and a protruding valley depth Rvk at the chamfered surface satisfies a relationship of Rvk ≦ 0.95 μm. Here, the protruding valley depth Rvk conforms to JIS B0671-2: 2002 (hereinafter the same).
このような構成によれば、ガラス基板の境界部に形成された面取り面の面性状が、突出谷部深さRvkをパラメータとして使用して規定されていることに加えて、そのRvkが0.95μm以下と規定された面取り面を有するガラス基板であることから、当該ガラス基板の撓みや不当な温度分布に起因する破損並びにガラスパーティクルに起因する品位低下の問題が可及的に抑制される。すなわち、突出谷部深さRvkは、面の平均的な凹凸よりも深い部分がどの程度であるかを示す指標となる値であって、この値が大きければ異常に深い谷部分が存在することになる。そして、境界部がこのような異常谷部分を有する面性状であれば、撓みや不当な温度分布に起因して当該境界部に引張り応力が発生した場合に、異常に深い谷部分に応力集中が生じるため、破損を到来し易くなると共に、その異常に深い谷部分にガラスパーティクルが残存滞留し易くなる。しかしながら、上記のように境界部に形成された面取り面の突出谷部深さRvkが0.95μm以下であると、境界部には異常に深い谷部分が存在しないことから、境界部に引張り応力が作用しても応力集中が生じ難くなると共に、ガラスパーティクルが残存滞留し難くなる。なお、このような観点から、境界部に形成された面取り面の突出谷部深さRvkは、0.20μm以下であることがより好ましい。また、ガラス基板の境界部における突出谷部深さRvkは、この境界部の面取り面に連接する端面の突出谷部深さRvkよりも小さいことが有効である。すなわち、ガラス基板の撓みや不当な温度分布に起因して当該ガラス基板の内部に応力が発生する場合には、それらの応力は、境界部付近に最も強く生じ易いことが判明している。そのため、境界部の突出谷部深さRvkを、端面の突出谷部深さRvkよりも小さくすれば、応力集中の生じ易い境界部からは、その応力集中の原因となる異常に深い谷部分が低減されていることになる。その結果として、ガラス基板の撓みや不当な温度分布に起因する破損を可及的に低減させることができ、これに加えてガラスパーティクルの残存滞留の問題も回避される。なお、ガラス基板の端面における突出谷部深さRvkが、境界部の面取り面の突出谷部深さRvkよりも小さくても、面性状の観点からは過剰品質になるものの、破損やガラスパーティクルの問題に支障が生じることはない。そして、この第2の発明に係るガラス基板においても、強化処理(熱強化処理)が施されていなくても、或いは施されていても、上記のような利点を得ることができる。 According to such a configuration, the surface property of the chamfered surface formed at the boundary portion of the glass substrate is defined using the protruding valley depth Rvk as a parameter, and the Rvk is equal to 0. Since it is a glass substrate having a chamfered surface defined as 95 μm or less, the problem of breakage due to bending of the glass substrate and improper temperature distribution and degradation of quality due to glass particles are suppressed as much as possible. That is, the protruding valley depth Rvk is a value indicating how much the portion deeper than the average unevenness of the surface is, and if this value is large, an abnormally deep valley portion exists. become. If the boundary portion has such an abnormal valley portion, when the tensile stress is generated in the boundary portion due to bending or an inappropriate temperature distribution, the stress concentration is abnormally deep in the valley portion. As a result, breakage is likely to occur, and the glass particles are likely to remain and stay in the abnormally deep valley portion. However, if the projecting trough depth Rvk of the chamfered surface formed at the boundary portion is 0.95 μm or less as described above, there is no abnormally deep trough portion at the boundary portion. The stress concentration is less likely to occur even if acts, and the glass particles are less likely to remain. From such a viewpoint, it is more preferable that the protruding valley depth Rvk of the chamfered surface formed at the boundary portion is 0.20 μm or less. In addition, it is effective that the protruding valley depth Rvk at the boundary portion of the glass substrate is smaller than the protruding valley depth Rvk of the end surface connected to the chamfered surface of the boundary portion. That is, it has been found that when stress is generated inside the glass substrate due to bending of the glass substrate or an inappropriate temperature distribution, these stresses are most likely to occur near the boundary. Therefore, if the protruding valley depth Rvk of the boundary portion is made smaller than the protruding valley depth Rvk of the end face, an abnormally deep valley portion that causes the stress concentration is generated from the boundary portion where stress concentration is likely to occur. It will be reduced. As a result, it is possible to reduce as much as possible the damage caused by the bending of the glass substrate and the inappropriate temperature distribution, and in addition to this, the problem of remaining glass particles is avoided. In addition, even if the protruding valley depth Rvk at the end surface of the glass substrate is smaller than the protruding valley depth Rvk of the chamfered surface of the boundary portion, although it becomes an excessive quality from the viewpoint of surface properties, The problem will not be disturbed. And even in the glass substrate which concerns on this 2nd invention, even if it does not perform the reinforcement | strengthening process (thermal reinforcement | strengthening process) or is performed, the above advantages can be acquired.
上記技術的課題を解決するために創案された第3の発明は、表面および裏面と、その両面の外周端の相互間に存する端面とを有するガラス基板において、前記表面および裏面の少なくとも一方の面と前記端面との間の境界部に面取り面が形成され、該面取り面における粗さ曲線の二乗平均平方根傾斜RΔqが、RΔq≦0.10の関係を満たすことに特徴づけられる。ここで、粗さ曲線の二乗平均平方根傾斜RΔqは、JIS B0601-2001に準拠している(以下、同様)。 A third invention devised to solve the above technical problem is a glass substrate having a front surface and a back surface, and end surfaces existing between outer peripheral ends of both surfaces, and at least one surface of the front surface and the back surface. A chamfered surface is formed at a boundary portion between the surface and the end surface, and the root mean square slope RΔq of the roughness curve on the chamfered surface satisfies the relationship of RΔq ≦ 0.10. Here, the root mean square slope RΔq of the roughness curve conforms to JIS B0601-2001 (the same applies hereinafter).
このような構成によれば、ガラス基板の境界部に形成された面取り面の面性状が、粗さ曲線の二乗平均平方根傾斜RΔqをパラメータとして使用して規定されていることに加えて、そのRΔqが0.10以下と規定された面取り面を有するガラス基板であることから、当該ガラス基板の撓みや不当な温度分布に起因する破損並びにガラスパーティクルに起因する品位低下の問題が可及的に抑制される。すなわち、粗さ曲線の二乗平均平方根傾斜RΔqは、粗さ曲線における各凹部および各凸部における当該面の法線に対する傾斜の平均値であることから、この値が大きければ凹凸の傾斜が急であること、つまり谷底が鋭利な形状をなす凹部が多いことを意味している。そして、境界部がこのような性状の面取り面であれば、撓みや不当な温度分布に起因して当該境界部に引張り応力が発生した場合に、谷底が鋭利な形状をなす凹部に応力集中が生じるため、破損が到来し易くなると共に、その凹部にガラスパーティクルが残存滞留し易くなる。しかしながら、上記のように境界部に形成された面取り面における粗さ曲線の二乗平均平方根傾斜RΔqが0.10以下であると、境界部には鋭利な谷底を有する凹部が問題とならない程度に少ないことから、境界部に引張り応力が作用しても応力集中が生じ難くなると共に、ガラスパーティクルが残存滞留し難くなる。なお、このような観点から、境界部に形成された面取り面における粗さ曲線の二乗平均平方根傾斜RΔqは、0.05以下であることがより好ましい。また、ガラス基板の境界面における粗さ曲線の二乗平均平方根傾斜RΔqは、この境界面に連接する端面の粗さ曲線の二乗平均平方根傾斜RΔqよりも小さいことが有効である。すなわち、ガラス基板の撓みや不当な温度分布に起因して当該ガラス基板の内部に応力が発生する場合には、それらの応力は、境界部付近に最も強く生じ易いことが判明している。そのため、境界部の粗さ曲線の二乗平均平方根傾斜RΔqを、端面の粗さ曲線の二乗平均平方根傾斜RΔqよりも小さくすれば、応力集中の生じ易い境界部からは、その応力集中の原因となる谷底が鋭利とされた凹部が低減されていることになる。その結果として、ガラス基板の撓みや不当な温度分布に起因する破損を可及的に低減させることができ、これに加えてガラスパーティクルの残存滞留の問題も回避される。なお、ガラス基板の端面における粗さ曲線の二乗平均平方根傾斜RΔqが、境界部の面取り面における粗さ曲線の二乗平均平方根傾斜RΔqよりも小さくても、面性状の観点からは過剰品質になるものの、破損やガラスパーティクルの問題に支障が生じることはない。そして、この第3の発明に係るガラス基板においても、強化処理(熱強化処理)が施されていなくても、或いは施されていても、上記のような利点を得ることができる。 According to such a configuration, in addition to the fact that the surface property of the chamfered surface formed at the boundary portion of the glass substrate is defined using the root mean square slope RΔq of the roughness curve as a parameter, the RΔq Is a glass substrate having a chamfered surface defined as 0.10 or less, it is possible to suppress as much as possible problems of breakage due to bending of the glass substrate and improper temperature distribution and degradation of quality due to glass particles. Is done. That is, the root mean square slope RΔq of the roughness curve is an average value of the slope of each concave portion and each convex portion of the roughness curve with respect to the normal of the surface. This means that there are many concave portions in which the valley bottom has a sharp shape. If the boundary portion is a chamfered surface having such a property, when a tensile stress is generated in the boundary portion due to bending or an inappropriate temperature distribution, stress concentration occurs in the concave portion where the bottom of the valley forms a sharp shape. As a result, breakage is likely to occur, and the glass particles are liable to remain in the recesses. However, when the root mean square slope RΔq of the roughness curve in the chamfered surface formed at the boundary portion as described above is 0.10 or less, the boundary portion has few concave portions having sharp valley bottoms so as not to cause a problem. For this reason, even if tensile stress acts on the boundary portion, stress concentration is less likely to occur, and the glass particles are less likely to remain. From such a viewpoint, the root mean square slope RΔq of the roughness curve on the chamfered surface formed at the boundary is more preferably 0.05 or less. In addition, it is effective that the root mean square slope RΔq of the roughness curve at the boundary surface of the glass substrate is smaller than the root mean square slope RΔq of the roughness curve of the end surface connected to the boundary surface. That is, it has been found that when stress is generated inside the glass substrate due to bending of the glass substrate or an inappropriate temperature distribution, these stresses are most likely to occur near the boundary. Therefore, if the root mean square slope RΔq of the roughness curve of the boundary portion is made smaller than the root mean square slope RΔq of the end surface roughness curve, it causes stress concentration from the boundary portion where stress concentration is likely to occur. The recessed part with which the valley bottom was made sharp is reduced. As a result, it is possible to reduce as much as possible the damage caused by the bending of the glass substrate and the inappropriate temperature distribution, and in addition to this, the problem of remaining glass particles is avoided. Even if the root mean square slope RΔq of the roughness curve at the end face of the glass substrate is smaller than the root mean square slope RΔq of the roughness curve at the chamfered surface of the boundary, the quality is excessive from the viewpoint of surface properties. There will be no hindrance to breakage or glass particle problems. Even in the glass substrate according to the third aspect of the present invention, the above-described advantages can be obtained even if the strengthening process (thermal strengthening process) is not performed or is performed.
上記技術的課題を解決するために創案された第4の発明は、表面および裏面と、その両面の外周端の相互間に存する端面とを有するガラス基板において、前記表面および裏面の少なくとも一方の面と前記端面との間の境界部に面取り面が形成され、該面取り面における最大谷深さRvは、Rv≦2.0μmの関係を満たすことに特徴づけられる。ここで、最大谷深さRvは、JIS B0601-2001に準拠している(以下、同様)。 A fourth invention devised to solve the above technical problem is a glass substrate having a front surface and a back surface, and end surfaces existing between the outer peripheral ends of the both surfaces, and at least one surface of the front surface and the back surface. A chamfered surface is formed at a boundary portion between the first and second end surfaces, and the maximum valley depth Rv in the chamfered surface satisfies the relationship of Rv ≦ 2.0 μm. Here, the maximum valley depth Rv conforms to JIS B0601-2001 (the same applies hereinafter).
このような構成によれば、ガラス基板の境界部に形成された面取り面の面性状が、最大谷深さRvをパラメータとして使用して規定されていることに加えて、そのRvが2.0μm以下と規定された面取り面を有するガラス基板であることから、当該ガラス基板の撓みや不当な温度分布に起因する破損並びにガラスパーティクルに起因する品位低下の問題が可及的に抑制される。すなわち、上記の面取り面の性状を表わす粗さ曲線には、山部と谷部とが存在しているが、谷部が深い場合に曲げや熱による引張応力が面取り面に作用すると、谷部を引き裂くようにその谷底に応力集中が生じ、これに起因して谷部の引き裂きが進展することにより、ガラス基板を破損に至らしめる。しかしながら、上記のように面取り面の最大谷深さRvが2.0μm以下であると、面取り面には、熱や曲げによる引張応力に起因して引き裂きが進展するような深さの谷部が存在していないことになり、ガラス基板の破損が到来し難くなるばかりでなく、谷部にガラスパーティクルが残存滞留し難くなる。なお、このような観点から、境界部に形成された面取り面の最大谷深さRvは、1.5μm以下であることがより好ましい。また、ガラス基板の面取り面における最大谷深さRvは、この面取り面に連接する端面の最大谷深さRvよりも小さいことが有効である。すなわち、ガラス基板の撓みや不当な温度分布に起因して当該ガラス基板の内部に応力が発生する場合には、それらの応力は、境界部付近に最も強く生じ易いことが判明している。そのため、境界部(面取り面)の最大谷深さRvを、端面の最大谷深さRvよりも小さくすれば、応力集中の生じ易い境界部からは、その応力集中の原因となる深い谷部が低減もしくは消失していることになる。その結果として、ガラス基板の撓みや不当な温度分布に起因する破損を可及的に低減させることができ、これに加えてガラスパーティクルの残存滞留の問題も回避される。なお、ガラス基板の端面における最大谷深さRvが、境界部の面取り面における最大谷深さRvよりも小さくても、面性状の観点からは過剰品質になるものの、破損やガラスパーティクルの問題に支障が生じることはない。そして、この第4の発明に係るガラス基板においても、強化処理(熱強化処理)が施されていなくても、或いは施されていても、上記のような利点を得ることができる。 According to such a configuration, the surface property of the chamfered surface formed at the boundary portion of the glass substrate is defined using the maximum valley depth Rv as a parameter, and the Rv is 2.0 μm. Since the glass substrate has a chamfered surface defined as follows, the problem of breakage due to bending of the glass substrate and an inappropriate temperature distribution and the deterioration of quality caused by glass particles are suppressed as much as possible. That is, in the roughness curve representing the properties of the chamfered surface, there are crests and troughs, but when the troughs are deep, if tensile stress due to bending or heat acts on the chamfered surfaces, the troughs As a result, stress concentration occurs at the bottom of the valley so that the glass substrate is torn, and the tearing of the valley develops due to this, thereby causing the glass substrate to break. However, when the maximum valley depth Rv of the chamfered surface is 2.0 μm or less as described above, the chamfered surface has a valley portion having such a depth that tearing develops due to heat or bending tensile stress. As a result, the glass substrate is not easily damaged, and the glass particles hardly remain in the valleys. From such a viewpoint, it is more preferable that the maximum valley depth Rv of the chamfered surface formed at the boundary portion is 1.5 μm or less. In addition, it is effective that the maximum valley depth Rv on the chamfered surface of the glass substrate is smaller than the maximum valley depth Rv of the end surface connected to the chamfered surface. That is, it has been found that when stress is generated inside the glass substrate due to bending of the glass substrate or an inappropriate temperature distribution, these stresses are most likely to occur near the boundary. Therefore, if the maximum valley depth Rv of the boundary portion (chamfered surface) is made smaller than the maximum valley depth Rv of the end surface, a deep valley portion that causes the stress concentration is generated from the boundary portion where stress concentration easily occurs. It will be reduced or disappeared. As a result, it is possible to reduce as much as possible the damage caused by the bending of the glass substrate and the inappropriate temperature distribution, and in addition to this, the problem of remaining glass particles is avoided. In addition, even if the maximum valley depth Rv at the end face of the glass substrate is smaller than the maximum valley depth Rv at the chamfered surface of the boundary portion, although it becomes excessive quality from the viewpoint of surface properties, it is a problem of breakage and glass particles. There will be no hindrance. Even in the glass substrate according to the fourth invention, the above-described advantages can be obtained even if the strengthening process (thermal strengthening process) is not performed or is performed.
以上の第1~第4の何れかの発明において、前記面取り面は、研磨処理により形成されていることが好ましい。 In any of the first to fourth inventions described above, the chamfered surface is preferably formed by a polishing process.
すなわち、ガラス基板の当該境界部に研磨処理による面取り面を形成するようにしたならば、同一の研磨処理を施すことにより、その面取り面における面性状(第1の発明ではRzjisおよびRSm、第2の発明ではRvk、第3の発明ではRΔq、第4の発明ではRv)を均一化できることになるため、単一のガラス基板の境界部に、長手方向全長に亘って均一な面性状を有する面取り面を形成することができる。加えて、複数のガラス基板についても、ガラス基板の別異に拘わらず、それぞれの境界部に同等の面性状を有する面取り面を形成することが可能となり、品質のバラツキを低減させることが可能となる。 That is, if a chamfered surface is formed at the boundary portion of the glass substrate by performing the same polishing process, the surface properties (Rzjis and RSm, second in the first invention) Rvk in the present invention, RΔq in the third invention, and Rv in the fourth invention) can be made uniform. Therefore, a chamfer having a uniform surface property over the entire length in the longitudinal direction at the boundary portion of a single glass substrate. A surface can be formed. In addition, it is possible to form a chamfered surface having the same surface property at each boundary portion for a plurality of glass substrates, regardless of the difference in glass substrates, and to reduce variation in quality. Become.
更に、前記面取り面は、前記端面の研磨処理後における研磨処理により形成されていることが好適である。 Furthermore, it is preferable that the chamfered surface is formed by a polishing process after the end surface is polished.
すなわち、先ずガラス基板の端面を研磨することにより当該端面の面性状を適度に良くしておき(第1の発明ではRzjisを小さく且つRSmを大きくし、第2の発明ではRvkを小さくし、第3の発明ではRΔqを小さくし、第4の発明ではRvを小さくし)、その後に、研磨により面取り面を形成することにより当該面取り面の面性状を前記端面の面性状よりも良くすれば、効率良くガラス基板の破損やパーティクルの問題を解消し得る面性状とすることができる。したがって、面性状の観点からは、効率的な処理となる。 That is, by first polishing the end surface of the glass substrate, the surface properties of the end surface are appropriately improved (Rzjis is reduced and RSm is increased in the first invention, Rvk is reduced in the second invention, In the third invention, RΔq is reduced, and in the fourth invention, Rv is reduced), and then the surface property of the chamfered surface is made better than the surface property of the end surface by forming a chamfered surface by polishing. It is possible to achieve surface properties that can efficiently solve the problem of glass substrate breakage and particles. Therefore, it is an efficient process from the viewpoint of surface properties.
上記の構成において、前記端面は、前記表面および裏面の外周端の相互間に平坦面として形成することができる。 In the above configuration, the end surface can be formed as a flat surface between the outer peripheral ends of the front surface and the back surface.
このようにすれば、表面および裏面の双方の面と端面との間のそれぞれの境界部が角張った状態となるため、引張応力の緩和の観点から、当該境界部に面取り面を形成する意義は大きくなる。この場合、ガラス基板の端面は、研磨処理が施されているものであってもよく、或いは、ガラス基板の分割をレーザー割断等のようにレーザーを使用して行ったものについては研磨処理が施されていなくてもよい。すなわち、ガラス基板の分割をレーザー割断等で行った場合には、平坦面として形成されるガラス基板の端面の面性状が、表面および裏面と略同等の面に近くなることから、端面に研磨を行うことなく、境界部に研磨による面取り面を形成するだけで充分となる。 In this way, since each boundary portion between both the front and back surfaces and the end surface is in an angular state, from the viewpoint of relaxation of tensile stress, the significance of forming a chamfered surface at the boundary portion is growing. In this case, the end surface of the glass substrate may be subjected to a polishing process, or a glass substrate that has been divided using a laser, such as laser cutting, is subjected to a polishing process. It does not have to be. That is, when the glass substrate is divided by laser cleaving or the like, the surface properties of the end surface of the glass substrate formed as a flat surface are close to the same surface as the front and back surfaces, so the end surface is polished. Without it, it is sufficient to form a chamfered surface by polishing at the boundary.
また、前記端面は、前記表面および裏面の外周端から板厚中央部にかけて外方に漸次突出する湾曲面として形成することもできる。 Also, the end surface can be formed as a curved surface that gradually protrudes outward from the outer peripheral ends of the front and back surfaces to the center portion of the plate thickness.
このようにすれば、面取り面と端面との連接部、および面取り面と表面(または裏面)との連接部を、緩やかな屈曲部を介して連ならせることが可能となるため、面取り面周辺に生じる引張応力或いは応力集中を小さくする上で有利となる。 In this way, the connecting portion between the chamfered surface and the end surface and the connecting portion between the chamfered surface and the front surface (or the back surface) can be connected via a gentle bent portion, so that the periphery of the chamfered surface This is advantageous in reducing the tensile stress or stress concentration generated in the case.
このような端面形状の場合、前記端面の長手方向と直交し且つ前記表面及び裏面と直交する断面において、表面側の境界部に形成される前記面取り面の表面側への接線と、前記表面とのなす角度α、および、裏面側の境界部に形成される前記面取り面の裏面側への接線と、前記裏面とのなす角度βは、それぞれ、10°≦α≦30°および10°≦β≦30°の関係を満たしていることが好ましい。 In the case of such an end face shape, in a cross section orthogonal to the longitudinal direction of the end face and orthogonal to the front surface and the back surface, a tangent to the front surface side of the chamfered surface formed at the boundary portion on the front surface side, and the front surface And the angle β formed between the tangent to the back surface side of the chamfered surface formed at the boundary portion on the back surface side and the back surface is 10 ° ≦ α ≦ 30 ° and 10 ° ≦ β, respectively. It is preferable that the relationship of ≦ 30 ° is satisfied.
すなわち、例えば、図7に平面視で示すように、板厚中央部にかけて外方に漸次突出する断面円弧状の端面3b1のみを研磨した後においては、当該端面3b1と表面(または裏面)2a1との境界部z1が、凹凸形状になると共に、この境界部z1は、本来ならば直線zxで示す位置に存在するものであるが、実際には表面(または裏面)2a1の中央側に偏倚して存在することになる。このような現象は、ガラス基板11の端面3b1の研磨時に、砥石の砥粒が、本来の境界となるべき直線zxよりも、表面(または裏面)2a1側に食い込むこと、および砥石の砥粒が、表面(または裏面)2a1側部分を剥離させることなどによって生じるものである。然るに、図8に縦断面で示すように、ガラス基板11の表面(または裏面)2a1と端面3b1との本来的に境界となるべき上記の直線zx近辺に、砥石の砥面6b1が45°程度の傾斜をもって接触したのでは、実際の境界部z1に砥石の砥面6b1が非接触となる。そのため、砥石が、この凹凸状の境界部z1を研磨できなかったり、或いは境界部z1の一部のみを研磨できるに留まるなどして、結果的には凹凸状の境界部zが完全に研磨されず、この境界部に特定の研磨面からなる面取り面を形成できないという事態を招く。そこで、上記の角度α、βを45°以下とすることが好ましいが、この角度α、βが10°よりも小さいと、面取り面を研磨により形成する場合における端面側の研磨領域が狭くなり、当該端面と表面(または裏面)とのそれぞれの境界部に残存しているガラスチッピング或いは欠けやクラック等の除去が不十分となるため、これを回避するには研磨領域を表面側(または裏面側)に広げる必要性が生じて、境界部として好ましくない形態となる。これに対して、上記の角度α、βが30°を超えると、面取り面を研磨により形成する場合における端面側の研磨領域を不当に広くしなければ、当該面取り面を形成できなくなり、生産性の悪化を招く。したがって、この角度α、βが上記の数値範囲内にあれば、これらの不具合は生じない。このような観点から、より好ましくは、上記の角度α、βの下限値が15°とされ、上限値が20°とされる。
That is, for example, as shown in a plan view in FIG. 7, after polishing only the end surface 3b1 having an arcuate cross section that protrudes outwardly toward the center of the plate thickness, the end surface 3b1 and the front surface (or back surface) 2a1 The boundary portion z1 has an uneven shape, and this boundary portion z1 originally exists at the position indicated by the straight line zx, but is actually biased toward the center side of the front surface (or back surface) 2a1. Will exist. Such a phenomenon is caused by the fact that the abrasive grains of the grindstone bite into the front surface (or back surface) 2a1 side rather than the straight line zx that should be the original boundary when the end surface 3b1 of the
以上の構成において、板厚Tは、0.05mm≦T≦1.1mmの関係を満たすことが好ましい。 In the above configuration, the plate thickness T preferably satisfies the relationship of 0.05 mm ≦ T ≦ 1.1 mm.
すなわち、ガラス基板の板厚Tが1.1mmを超えると、当該ガラス基板の強度に対するガラス基板の板厚Tの影響が大きくなり、上述のガラス基板の破損につながる撓みや不当な温度分布による応力に対抗するための本発明(第1~第4の発明)特有の効果を充分に発揮し得なくなるおそれがある。これに対して、ガラス基板の板厚Tが0.05mm未満であると、表面および裏面の双方の面と端面とのそれぞれの間の境界部に適正な研磨処理を施すことが困難となり得る。したがって、ガラス基板の板厚Tが上記の数値範囲内にあれば、このような不具合を回避することができる。なお、これらの観点から、より好ましくは、ガラス基板の板厚Tの下限値が0.1mmとされ、上限値が0.7mmとされる。 That is, when the thickness T of the glass substrate exceeds 1.1 mm, the influence of the thickness T of the glass substrate on the strength of the glass substrate increases, and the stress due to the bending or the inappropriate temperature distribution that leads to the breakage of the glass substrate described above. There is a possibility that the effects unique to the present invention (first to fourth inventions) for combating the above cannot be fully exhibited. On the other hand, when the plate thickness T of the glass substrate is less than 0.05 mm, it may be difficult to perform an appropriate polishing process on the boundary portion between both the front surface and the back surface. Therefore, if the thickness T of the glass substrate is within the above numerical range, such a problem can be avoided. From these viewpoints, more preferably, the lower limit value of the plate thickness T of the glass substrate is 0.1 mm, and the upper limit value is 0.7 mm.
また、板厚Tと、前記面取り面の長手方向と直交する方向の幅Wとが、0.07≦W/T≦0.30の関係を満たすことが好ましい。 Further, it is preferable that the plate thickness T and the width W in the direction perpendicular to the longitudinal direction of the chamfered surface satisfy the relationship of 0.07 ≦ W / T ≦ 0.30.
すなわち、W/Tが0.07未満であると、面取り面の形成領域が不十分となり、面取り面の存在による端面強度の上昇効果が少なくなる。これに対して、W/Tが0.30を超えると、面取り面の形成に要する時間が長期化され、生産性が低下する。したがって、W/Tが上記の数値範囲内にあれば、このような不具合を回避し得る。なお、これらの観点から、より好ましくは、0.10≦W/T≦0.20の関係を満たすことである。 That is, when W / T is less than 0.07, the formation area of the chamfered surface is insufficient, and the effect of increasing the end face strength due to the presence of the chamfered surface is reduced. On the other hand, when W / T exceeds 0.30, the time required for forming the chamfered surface is prolonged, and the productivity is lowered. Therefore, if W / T is within the above numerical range, such a problem can be avoided. From these viewpoints, it is more preferable to satisfy the relationship of 0.10 ≦ W / T ≦ 0.20.
なお、以上の構成を備えたガラス基板は、面取り面が辺の全長に亘って形成されていることが好ましいが、板厚の薄いガラス基板等については、面取り面の研磨による形成の困難性を考慮して、平面視でのコーナー部近傍を面取り面の形成箇所から除外してもよい。 In addition, it is preferable that the chamfered surface of the glass substrate having the above configuration is formed over the entire length of the side. However, for a glass substrate having a thin plate thickness, it is difficult to form the chamfered surface by polishing. Considering this, the vicinity of the corner portion in plan view may be excluded from the chamfered surface forming portion.
一方、上記技術的課題を解決するために創案された方法の発明は、上述の面取り面を形成してなるガラス基板を製造する方法であって、前記面取り面を研磨する研磨具として、回転軸と直交する研磨面を有する回転研磨具を使用し、且つ前記研磨面の外周部の粗度を内周部の粗度よりも小さく形成すると共に、ガラス基板の表面および裏面の少なくとも一方の面と研磨処理後の端面との間の境界部に対して、前記回転研磨具がその長手方向に相対的に直線移動しながら前記回転軸廻りに回転することにより、前記研磨面の外周部および内周部の双方によって前記面取り面を形成することに特徴づけられる。 On the other hand, an invention of a method created to solve the above technical problem is a method of manufacturing a glass substrate formed with the above-mentioned chamfered surface, and a rotating shaft as a polishing tool for polishing the chamfered surface. And using a rotary polishing tool having a polishing surface orthogonal to the surface, and forming the roughness of the outer peripheral portion of the polishing surface to be smaller than the roughness of the inner peripheral portion, and at least one of the front and back surfaces of the glass substrate; By rotating the rotary polishing tool around the rotation axis while moving relatively linearly in the longitudinal direction with respect to the boundary portion between the end surface after the polishing process, the outer peripheral portion and the inner peripheral portion of the polishing surface The chamfered surface is formed by both of the parts.
このような方法によれば、回転研磨具の研磨面(砥面)が回転軸と直交し且つ該研磨面の外周部の粗度が内周部の粗度よりも小さくされているので、この回転研磨具を上述のガラス基板の境界部に対してその長手方向に相対的に直線移動させつつ回転軸廻りに回転させて該境界部の研磨処理を行う場合には、先ず研磨面における粗度の小さい外周部によって、当該境界部の微細削り(微細研磨)が行われていわゆる「ならし」効果が得られる。これにより、ガラス基板の境界部に対する面取り面形成の初期段階において、不当な応力集中が抑制され、且つガラス基板のばたつきに起因する欠け(初期チッピング)やクラック等の発生が抑制された上で、当該境界部に初期段階に相当する面取り面が形成される。次段階として、回転研磨具が相対的に直線移動することにより、研磨面における粗度の大きい内周部が、上記の初期段階に相当する面取り面に当接して、相対的な粗研磨が行われる。この相対的粗研磨によって、研磨の進行速度が高められるため、面取り面形成時間が短縮されると共に、相対的粗研磨の開始時には当該境界部が微細研磨されて上述の「ならし」が行われていることから、欠けやクラック等の発生或いはそれらの進展を招くことなく、円滑に相対的粗研磨が開始されて進行していく。最終段階として、回転研磨具がさらに相対的に直線移動することにより、研磨面における上述の粗度の小さい外周部が、相対的粗研磨を施された面取り面に当接して、仕上げ研磨が行われる。これにより、回転研磨具の振動が研磨面の移動方向後端から面取り面に作用することによる該面取り面の後端への欠けやクラック等の発生が抑止されると共に、相対的粗研磨に起因して面取り面に残存した微小な研削粉或いはガラス粉が除去されることになる。このように、単一の回転研磨具の相対的な直線移動に伴って、微細研磨(ならし)と、相対的粗研磨と、仕上げ研磨とからなる一連の研磨処理が、ガラス基板の境界部に対して順次施されることにより、欠けやクラック等の発生を抑止しつつ短時間で面取り面の形成処理を行うことが可能となるため、装置の簡素化および面取り面周辺の良好な品位を確保した上で、大幅な生産性の向上が図られる。なお、回転研磨具とガラス基板とは、何れか一方または双方が直線移動すればよいが、ガラス基板の境界部の長手方向の寸法が、1000mm以上という大型のガラス基板の場合には、ガラス基板を作業台上等に固定した状態で回転研磨具をその境界部の長手方向に移動させるのが有利であり、その逆の小型のガラス基板の場合には、回転研磨具を定置設置してガラス基板が研磨面を横切るように直線移動させるのが有利である。そして、好ましくは、回転研磨具をスプリング等の弾性体を用いて弾性支持した状態で、上述のガラス基板の境界部に圧接させることにより、面取り面の面性状を好適なものとすることができる。 According to such a method, the polishing surface (abrasive surface) of the rotary polishing tool is orthogonal to the rotation axis, and the roughness of the outer peripheral portion of the polishing surface is smaller than the roughness of the inner peripheral portion. When the rotary polishing tool is rotated about the rotation axis while linearly moving in the longitudinal direction with respect to the boundary portion of the glass substrate, the roughness of the polishing surface is first given. With the small outer peripheral portion, the boundary portion is finely cut (fine polishing) to obtain a so-called “run-in” effect. Thereby, in the initial stage of chamfered surface formation with respect to the boundary portion of the glass substrate, unreasonable stress concentration is suppressed, and occurrence of chipping (initial chipping) or cracks due to flapping of the glass substrate is suppressed, A chamfered surface corresponding to the initial stage is formed at the boundary portion. As the next stage, the rotary polishing tool moves relatively linearly, so that the inner peripheral part having a large roughness on the polishing surface comes into contact with the chamfered surface corresponding to the initial stage described above, and the relative rough polishing is performed. Is called. Since this relative rough polishing increases the speed of polishing, the time for forming a chamfered surface is shortened, and at the start of the relative rough polishing, the boundary portion is finely polished to perform the above-described “run-in”. Therefore, relative rough polishing is smoothly started and progressed without causing the occurrence of cracks, cracks, or the like or the progress thereof. As a final step, the rotary polishing tool further moves relatively linearly, so that the outer peripheral portion having the low roughness on the polishing surface comes into contact with the chamfered surface that has been subjected to relative rough polishing, and finish polishing is performed. Is called. As a result, the occurrence of chipping or cracking at the rear end of the chamfered surface due to the vibration of the rotary polishing tool acting on the chamfered surface from the rear end in the moving direction of the polishing surface is suppressed, and due to relative rough polishing. Thus, the fine grinding powder or glass powder remaining on the chamfered surface is removed. As described above, a series of polishing processes including fine polishing (relative polishing), relative rough polishing, and final polishing are performed along the relative linear movement of a single rotary polishing tool. Since the chamfered surface can be formed in a short time while suppressing the occurrence of chips and cracks, the device is simplified and the quality around the chamfered surface is improved. Once secured, productivity can be significantly improved. It should be noted that either one or both of the rotary polishing tool and the glass substrate may be linearly moved. However, in the case of a large glass substrate having a longitudinal dimension of the boundary portion of the glass substrate of 1000 mm or more, the glass substrate It is advantageous to move the rotating polishing tool in the longitudinal direction of the boundary portion while the tool is fixed on the work table or the like. It is advantageous to move the substrate linearly across the polishing surface. Then, preferably, the surface property of the chamfered surface can be made suitable by bringing the rotary polishing tool into elastic contact with an elastic body such as a spring and press-contacting the boundary portion of the glass substrate. .
更に、上記技術的課題を解決するために創案された方法の発明は、上述の端面の研磨処理後に面取り面を形成してなるガラス基板を製造する方法であって、ガラス基板の端面に対して粗研磨処理を施した後に仕上げ研磨処理を施し、然る後、ガラス基板の表面および裏面の少なくとも一方の面と前記端面との間の境界部に、前記仕上げ研磨処理よりも細かい粒度を有する研磨具を用いて特定研磨処理を施すことにより前記面取り面を形成することに特徴づけられる。 Furthermore, an invention of a method created to solve the above technical problem is a method of manufacturing a glass substrate formed by forming a chamfered surface after the above-described end surface polishing treatment, and the method is directed to the end surface of the glass substrate. After performing the rough polishing process, the final polishing process is performed, and then, polishing at a boundary portion between at least one of the front surface and the back surface of the glass substrate and the end surface has a finer particle size than the final polishing process. The chamfered surface is formed by performing a specific polishing process using a tool.
このような方法によれば、ガラス基板の端面を粗研磨と仕上げ研磨とによって効率よく短時間で例えば断面略円弧状等に研磨できると共に、その後の研磨として、さらにその端面をより細かい粒度の研磨具で同形状に研磨するのではなく、当該境界部に、より細かい粒度の研磨具で面取り面を形成するものである。そのため、端面と、面取り面と、表裏面との3種の面性状を、最適なものとして、端面強度を効率よく向上させることができる。そして、好ましくは、端面の粗研磨処理を行う研磨具と、端面の仕上げ研磨処理を行う研磨具と、特定研磨処理を行う研磨具とを、同一の経路上に配設しておくことにより、各研磨具が連続して相対的に直線移動しながら各研磨処理を行っていくことができ、各処理を別々に行う場合と比較して、処理時間を大幅に短縮して生産性の向上を図ることが可能となる。更に、好ましくは、特定研磨処理を行う研磨具をスプリング等の弾性体を用いて弾性支持した状態で、上述のガラス基板の境界部に圧接させることにより、面取り面の面性状を好適なものとすることができる。 According to such a method, the end face of the glass substrate can be polished efficiently in a short time by rough polishing and finish polishing, for example, in a substantially arc-shaped cross section, and the end face is further polished at a finer grain size as subsequent polishing. The chamfered surface is formed with a finer-grained polishing tool at the boundary portion, instead of being polished to the same shape with a tool. Therefore, the end face strength can be efficiently improved by optimizing the three kinds of surface properties of the end face, the chamfered face, and the front and back faces. And, preferably, by arranging a polishing tool for performing rough polishing processing of the end surface, a polishing tool for performing final polishing processing of the end surface, and a polishing tool for performing specific polishing processing on the same path, Each polishing tool can perform each polishing process while continuously moving relatively linearly, and compared with the case where each process is performed separately, the processing time is greatly reduced and the productivity is improved. It becomes possible to plan. Furthermore, preferably, the surface property of the chamfered surface is made suitable by bringing the polishing tool for performing the specific polishing treatment into pressure contact with the boundary portion of the glass substrate in a state where the polishing tool is elastically supported using an elastic body such as a spring. can do.
以上のように本発明によれば、ガラス基板の表面および裏面の少なくとも一方の面と端面との間に存する境界部に面取り面が形成され、この面取り面の面性状が、適切なパラメータを使用して最適値に規定されているため、ガラス基板の撓みや不当な温度分布に起因して当該面取り面に引張応力が発生した場合であっても、ガラス基板の割れや欠けの原因となる応力集中が生じ難くなり、破損の発生確率が激減すると共に、ガラスパーティクルが残存滞留し難くなり製品の品位向上が図られる。 As described above, according to the present invention, a chamfered surface is formed at a boundary portion existing between at least one of the front and back surfaces of the glass substrate and the end surface, and the surface properties of the chamfered surface use appropriate parameters. Therefore, even if tensile stress is generated on the chamfered surface due to bending of the glass substrate or an inappropriate temperature distribution, stress that causes cracking or chipping of the glass substrate. Concentration is less likely to occur, the probability of breakage is drastically reduced, and glass particles are less likely to stay and improve the quality of the product.
1 ガラス基板
2a 表面
2b 裏面
3 端面
4 面取り面
5 研磨具(第1、第2研磨具)
6 第3研磨具
6a 第3研磨具の回転軸
6b 第3研磨具の研磨面(砥面)
6ba 第3研磨具の研磨面(砥面)の内周部
6bb 第3研磨具の研磨面(砥面)の外周部
A 面取り面の表面側への接線
z 境界部
α 接線と表面とのなす角度
DESCRIPTION OF
6
6ba Inner peripheral portion 6bb of the third polishing tool (abrasive surface) Outer peripheral portion A of the third polishing tool's polishing surface (abrasive surface) A tangent line to the surface side of the chamfered surface Boundary portion α angle
以下、本発明の実施形態を添付図面を参照して説明する。なお、以下の実施形態においては、LCD用に代表されるFPD用のガラス基板を対象とする。 Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In the following embodiments, a glass substrate for FPD typified by LCD is targeted.
図1は、本実施形態に係るガラス基板1の要部を拡大した縦断面図である。なお、同図は、ガラス基板1の表面2a側部分の形態のみを図示しているが、裏面側部分も板厚方向中心線Xを挟んで略対称となる形態をなしている。同図に示すように、このガラス基板1は、平面状の表面2aと、縦断面が凸状の円弧形状をなす端面3と、表面2aと端面3との間に形成された平面状の面取り面4とを有する。換言すれば、ガラス基板1は、表面2aおよび裏面の外周端相互間に存する端面3と、表面2aおよび裏面とが、それぞれ面取り面4を介して連なっている。なお、このガラス基板1は、強化処理(熱強化処理等)が施されていないが、当該処理が施されていても差し支えない。
FIG. 1 is an enlarged longitudinal sectional view of a main part of the
このガラス基板1の端面3は、本実施形態では粗研磨処理が施された後に仕上げ研磨処理が施された研磨面であると共に、表面2aは、成形面つまり未研磨面であり、且つ、面取り面4は、端面3の仕上げ研磨処理後に特定研磨処理が施された特定研磨面である。
In this embodiment, the
このガラス基板1の面取り面4の十点平均粗さRz2は、端面3の十点平均粗さRz1よりも小さく、且つ、面取り面4の粗さ曲線要素の平均長さRSm2は、端面3の粗さ曲線要素の平均長さRSm1よりも大きくされている。なお、表面2aは、鏡面であることから、その十点平均粗さは、面取り面4の十点平均粗さRz2よりも小さく、且つ、その粗さ曲線要素の平均長さは、面取り面4の粗さ曲線要素の平均長さRSm2よりも大きい。この場合、面取り面4の十点平均粗さRz2は、1.5μm以下であると共に、端面3の研磨面の十点平均粗さRz1との比であるRz1/Rz2は、1.5以上で且つ10.0以下である。また、面取り面4の粗さ曲線要素の平均長さRSm2は、100μm以上であると共に、端面3の粗さ曲線要素の平均長さRSm1との比であるRSm1/RSm2は、0.1以上で且つ0.7以下である。
Ten-point average roughness Rz 2 of the chamfered
また、このガラス基板1の面取り面4の突出谷部深さRvkは、0.95以下(好ましくは0.20以下)とされている。なお、表面2aは、鏡面であることから、その突出谷部深さRvkは、面取り面4の突出谷部深さRvkよりも小さい。
The protruding valley depth Rvk of the chamfered
さらに、このガラス基板1の面取り面4の粗さ曲線の二乗平均平方根傾斜RΔqは、0.10以下(好ましくは0.05以下)とされている。なお、表面2aは、鏡面であることから、その粗さ曲線の二乗平均平方根傾斜RΔqは、面取り面4の粗さ曲線の二乗平均平方根傾斜RΔqよりも小さい。
Furthermore, the root mean square slope RΔq of the roughness curve of the chamfered
また、このガラス基板1の面取り面4の最大谷深さRvは、2.0μm以下(好ましくは1.5μm以下)とされている。なお、表面2aは、鏡面であることから、その最大谷深さRvは、面取り面4の最大谷深さRvよりも小さい。
Further, the maximum valley depth Rv of the chamfered
一方、図1に示す断面(端面3の長手方向と直交し且つ表面2aおよび裏面と直交する断面)においては、面取り面4の表面2a側への接線Aと表面2aとのなす角度αは、10°以上で且つ30°以下(本実施形態では18°)であると共に、図示しないが、裏面側の面取り面も、その裏面側への接線と裏面とのなす角度が、10°以上で且つ30°以下(本実施形態では18°)である。
On the other hand, in the cross section shown in FIG. 1 (the cross section orthogonal to the longitudinal direction of the
この場合、面取り面4は、端面3の研磨処理が行われたのみの状態での表面2aと端面3との波形をなす元の境界部zの周辺(図1に破線で示す部位の周辺)を、特定研磨処理により除去してなるものであり、その除去部は、元の境界部zから端面3側への幅W1が70μmで且つ元の境界部zから表面2a側への幅W2が30μmの領域である。なお、この元の境界部zの接線Bと表面2aとのなす角度γは、本実施形態では25°である。
In this case, the chamfered
さらに、このガラス基板1は、その板厚Tが、1.1mm以下で且つ0.05mm以上であると共に、面取り面4の幅W(面取り面4の長手方向(辺に沿う方向)と直交し且つ表面2aおよび裏面と平行な方向の寸法)と板厚Tとの比であるW/Tは、0.07以上で且つ0.30以下となるように設定されている。
Further, the
以上のような構成を備えたガラス基板1は、以下のようにして製造される。
The
図2は、ダウンドロー法やフロート法等による成形後におけるガラス原板の表面の四箇所に、略矩形の刻設線が描かれた領域が得られるようにスクライブを入れ、且つそのスクライブ痕を起点としてガラス原板を折り割ることにより得られた略矩形のガラス基板1と、そのガラス基板1の折り割られた端面部3aを研磨処理する研磨具5とを例示している。このガラス基板1の端面部3aは、先ず第1の研磨具により粗研磨処理が行われ、次いで第2の研磨具により仕上げ研磨処理が行われる。第1の研磨具は、図2に示すように、正面視で凹状の略円弧形状をなす外周面に、メタルボンドで保持されたダイヤモンド砥粒層を取り付けてなる粗研磨用回転砥石ホイール(メタルボンドダイヤモンドホイール)である。そして、この第1研磨具を、ガラス基板1の端面部3aに押し当てた状態で、第1研磨具をガラス基板1の端面部3aの長手方向(辺に沿う方向)に相対移動させることにより粗研磨処理を行う。第2研磨具は、第1研磨具と同形状をなし、その外周面に、炭化珪素等の細かい砥粒をポリウレタン樹脂等で結合した仕上げ研磨用回転砥石ホイール(レジンボンドホイール)である。この第2研磨具は、ガラス基板1の粗研磨処理した端面部に押し当てられた状態で、上記と同様に相対移動することにより仕上げ研磨処理が行われ、その結果として図3に示すように、ガラス基板1に十点平均粗さRzjisが約1~3μm、突出谷部深さRvkが約1.0~1.5、粗さ曲線の二乗平均平方根傾斜RΔqが約0.12~0.20、最大谷深さRvが約3.0~5.0μmの断面略円弧状の端面3bが形成される。なお、ガラス基板1の端面3bの形成は、上記のように二段階に亘る研磨処理に限らず、三段階以上に亘る研磨処理により行うようにしてもよい。
Fig. 2 shows scribing at four locations on the surface of the glass glass after molding by the downdraw method, float method, etc., so that areas with roughly rectangular engraving lines are drawn, and the scribe marks are the starting points. As an example, a substantially
以上のようにして、ガラス基板1に断面略円弧状の端面3bが形成された場合には、その端面3bと表面2aとの境界部z、および端面3bと裏面2bとの境界部zに、第3研磨具6を用いて特定研磨処理を施すことにより面取り面4を形成する。この第3研磨具6は、図4に示すように、回転軸6aと直交する平面状の研磨面(砥面)6bを有し、この研磨面6bは、上記の第2研磨具よりも細かい砥粒で形成されている。なお、ガラス基板1は、端面3bの周辺がせり出した状態で、作業台(定盤)7の上面にセットされる。
As described above, when the
そして、ガラス基板1の表面2a側の境界部zと裏面2b側の境界部zとに対して、同時に2つの第3研磨具6の研磨面6bを押し当てて回転させながら、第3研磨具6をガラス基板1の境界部zの長手方向に相対移動させることにより特定研磨処理が行われる。これにより、ガラス基板1の境界部zに残存していた多数のガラスチッピング等が除去される。この場合、2つの第3研磨具6の研磨面6bと、ガラス基板1の表面2aおよび裏面2bとなす角度はそれぞれ10°以上で且つ30°以下(本実施形態では18°)に設定される。好ましくは、第3研磨具6は、図5に示すように、中央部が円形の凹部であり、その凹部を取り囲むように、粗度が相対的に小さい内周側研磨部6baと、粗度が相対的に大きい外周側研磨部6bbとが配列され、この双方の研磨部6ba、6bbによってガラス基板1の境界部zが特定研磨処理を受ける。なお、2つの第3研磨具6は、相対移動方向に対して離隔して配置される。
Then, while simultaneously pressing and rotating the polishing
そして、この特定研磨処理を終えることにより、図6(および図1)に示すように、ガラス基板1の表面2aと端面3との間に境界部zを完全に除去してなる面取り面4が形成される。この面取り面4が形成されることにより、ガラス基板1の撓みや不当な温度分布に起因する引っ張り応力が当該面取り面4に作用しても、その面取り面4には応力集中が生じず、端面3(面取り面4を含む)の破壊強度が上昇すると共に、ガラスパーティクル或いはガラスチッピング等が残存滞留するという問題も回避される。
Then, by completing this specific polishing treatment, as shown in FIG. 6 (and FIG. 1), a
なお、上記実施形態では、端面3が、表面2aおよび裏面2bの外周端から外方に凸状に湾曲してなるガラス基板1に本発明を適用したが、端面3が、平坦面(好ましくは表裏面と直角な平坦面)をなすガラス基板についても同様に本発明を適用することが可能である。
In the above embodiment, the present invention is applied to the
また、上記実施形態では、表面及び裏面の外周端から板厚中央部にかけて外方に漸次突出する湾曲面をなす端面が形成されたガラス基板に本発明を適用したが、表面および裏面の外周端の相互間にそれらの面と直角な平坦面をなす端面が形成されたガラス基板についても同様に本発明を適用することができる。 Further, in the above embodiment, the present invention is applied to the glass substrate on which the end surface forming the curved surface that gradually protrudes outward from the outer peripheral edge of the front surface and the back surface to the central portion of the plate thickness. The present invention can be similarly applied to a glass substrate in which an end surface forming a flat surface perpendicular to these surfaces is formed between them.
さらに、上記実施形態では、ガラス原板を折割りにより分割してなるガラス基板に本発明を適用したが、ガラス原板をレーザー割断等のようにレーザー或いは熱応力を使用して分割してなるガラス基板についても同様に本発明を適用することができる。この場合には、平坦面をなす端面に対して研磨処理が行われず、境界部に対してのみ研磨処理による面取り面が形成される。 Furthermore, in the said embodiment, although this invention was applied to the glass substrate formed by dividing | segmenting a glass original plate by folding, the glass substrate formed by dividing a glass original plate using a laser or a thermal stress like laser cleaving etc. The present invention can be similarly applied to. In this case, the polishing process is not performed on the end surface forming the flat surface, and the chamfered surface is formed only by the polishing process on the boundary portion.
また、上記実施形態では、FPD用のガラス基板に本発明を適用したが、例えば、有機EL照明用や太陽電池用のガラス基板についても同様に本発明を適用することが可能である。 In the above embodiment, the present invention is applied to a glass substrate for FPD. However, the present invention can also be applied to a glass substrate for organic EL lighting or a solar cell, for example.
本発明者等は、上述の図1に例示したガラス基板の面取り面における十点平均粗さRzjisおよび粗さ曲線要素の平均長さRSmに関する効果を確認すべく、本発明の実施例1a~1eと比較例1a~1cとの対比を、以下に示すようにして行った。これらの実施例および比較例は何れについても、ガラス原板として、オーバーフローダウンドロー法で成形された日本電気硝子株式会社製OA-10を用いた。 In order to confirm the effects of the ten-point average roughness Rzjis and the average length RSm of the roughness curve element on the chamfered surface of the glass substrate illustrated in FIG. 1 as described above, the present inventors have implemented Examples 1a to 1e of the present invention. And Comparative Examples 1a to 1c were compared as follows. In each of these Examples and Comparative Examples, OA-10 manufactured by Nippon Electric Glass Co., Ltd., which was formed by the overflow downdraw method, was used as the glass original plate.
下記の表1に示す本発明の実施例1a~1cおよび比較例1a、1bについては、用いる試料として、板厚が700μmのガラス原板をスクライブ痕に沿って折り割り分割することにより、短辺寸法が1500mmおよび長辺寸法が1800mmのガラス基板を得た。また、同様に、実施例1d、1eおよび比較例1cについては、用いる試料として、板厚が500μmのガラス原板をスクライブ痕に沿って折り割り分割することにより、短辺寸法が550mmおよび長辺寸法が670mmのガラス基板を得た。そして、これらのガラス基板の端面部に対して、断面が凸状の円弧形状をなす端面を形成するための研磨処理と、その研磨後の端面と表面および裏面とのそれぞれの境界部に面取り面を形成するための特定研磨処理とを、以下に示す手順で行った。 For Examples 1a to 1c and Comparative Examples 1a and 1b of the present invention shown in Table 1 below, as a sample to be used, a glass original plate having a plate thickness of 700 μm is split along a scribe mark so as to have a short side dimension. A glass substrate having a length of 1500 mm and a long side dimension of 1800 mm was obtained. Similarly, for Examples 1d and 1e and Comparative Example 1c, as a sample to be used, a glass original plate having a plate thickness of 500 μm is folded and divided along a scribe mark so that a short side dimension is 550 mm and a long side dimension is Obtained a glass substrate of 670 mm. Then, with respect to the end surface portions of these glass substrates, a polishing process for forming an end surface having a circular arc shape with a convex cross section, and chamfered surfaces at respective boundary portions between the end surface, the front surface, and the back surface after the polishing The specific polishing treatment for forming the film was performed according to the following procedure.
本発明の実施例1a~1cおよび比較例1a、1bについては、先ず、ガラス基板を定盤上に載置して吸着固定した状態で、図2に示す形態をなす第1研磨具としての粗研磨用回転砥石(砥粒#400)の外周面を、ガラス基板の端面部に圧接させると共に、表1に示す研削速度で直線移動させることにより、断面略円弧形状の粗面である端面部を形成した。次いで、同様に、図2に示す形態をなす第2研磨具としての仕上げ研磨用回転砥石(砥粒#1000)の外周面を、ガラス基板の粗研磨後の端面部に圧接させると共に、表1に示す研削速度で直線移動させることにより、断面略円弧形状に仕上げ研磨された端面を形成した。また、本発明の実施例1d、1eおよび比較例1cについては、先ず、ガラス基板を表2に示す研削速度で直線移動させながら、定位置に固定配置された図2に示す形態をなす第1研磨具としての粗研磨用回転砥石(砥粒#400)の外周面を、ガラス基板の端面部に圧接させることにより、断面略円弧形状の粗面である端面部を形成した。次いで、同様に、ガラス基板を表2に示す研削速度で直線移動させながら、定位置に固定設置された図2に示す形態をなす第2研磨具としての仕上げ研磨用回転砥石(砥粒#1000)の外周面を、ガラス基板の粗研磨後の端面部に圧接させることにより、断面略円弧形状に仕上げ研磨された端面を形成した。 For Examples 1a to 1c and Comparative Examples 1a and 1b of the present invention, first, a rough polishing as a first polishing tool having the form shown in FIG. 2 in a state where a glass substrate is placed on a surface plate and fixed by suction. The outer peripheral surface of the polishing grindstone (abrasive grain # 400) is brought into pressure contact with the end surface portion of the glass substrate and linearly moved at the grinding speed shown in Table 1 to obtain an end surface portion that is a rough surface having a substantially arc-shaped cross section. Formed. Next, similarly, the outer peripheral surface of the rotary grindstone for finishing polishing (abrasive grain # 1000) as the second polishing tool having the form shown in FIG. 2 is brought into pressure contact with the end surface portion after rough polishing of the glass substrate, and Table 1 The end face finished and polished into a substantially circular arc shape was formed by linear movement at the grinding speed shown in FIG. For Examples 1d and 1e of the present invention and Comparative Example 1c, first, the glass substrate is linearly moved at the grinding speed shown in Table 2 while being fixedly arranged at a fixed position as shown in FIG. The outer peripheral surface of the rotating grindstone for rough polishing (abrasive grain # 400) as a polishing tool was brought into pressure contact with the end surface portion of the glass substrate, thereby forming an end surface portion that was a rough surface having a substantially arc-shaped cross section. Next, similarly, while rotating the glass substrate linearly at the grinding speed shown in Table 2, the final polishing rotary grindstone (abrasive grain # 1000) as the second polishing tool having the form shown in FIG. ) Was pressed into contact with the end surface of the glass substrate after rough polishing to form an end surface that was finished and polished into a substantially circular arc cross section.
この後、ガラス基板の端面と表面および裏面とのそれぞれの境界部に対して、第3研磨具で特定研磨処理を行った。第3研磨具としては、円形の基盤上に、樹脂材料にダイヤモンド砥粒を分散させてなる平板状のダイヤモンド研磨板を固定したものを使用した。なお、上記の砥粒の大きさおよび表1、2に示す砥粒の大きさは、JIS R6001:1998に準拠している。 Thereafter, a specific polishing process was performed with a third polishing tool on each boundary portion between the end surface, the front surface, and the back surface of the glass substrate. As the third polishing tool, there was used a flat diamond polishing plate in which diamond abrasive grains were dispersed in a resin material on a circular base. In addition, the magnitude | size of said abrasive grain and the magnitude | size of the abrasive grain shown to Table 1, 2 are based on JISR6001: 1998.
特定研磨処理の実行に際しては、ガラス基板の表面および裏面と面取り面の接線とのそれぞれがなす角度(図1の角度α:裏面側も同様)が18°~22°になるように、適宜第3研磨具の角度を調整した上で、第3研磨具とガラス基板との接触面に研削液(研削水)を供給した。そして、所望の面取り寸法が得られるように、第3研磨具(研磨板)を周速2000m/minで回転させながら、表1、2に示すように異なる研削速度で直線移動させ、コーナー部近傍を除くガラス基板の全外周に亘り、特定研磨処理を行った。以上のようにして、実施例1a~1cおよび実施例1d、1eのガラス基板を得た。 When performing the specific polishing process, the angle formed by the front and back surfaces of the glass substrate and the tangent line of the chamfered surface (angle α in FIG. 1; the same applies to the back surface side) is 18 ° to 22 ° as appropriate. After adjusting the angle of the 3 polishing tool, a grinding liquid (grinding water) was supplied to the contact surface between the third polishing tool and the glass substrate. Then, while rotating the third polishing tool (polishing plate) at a peripheral speed of 2000 m / min so as to obtain a desired chamfer dimension, it is linearly moved at different grinding speeds as shown in Tables 1 and 2, and near the corner portion. A specific polishing treatment was performed over the entire outer periphery of the glass substrate except for. As described above, the glass substrates of Examples 1a to 1c and Examples 1d and 1e were obtained.
実施例1a、1b、1dでは、第3研磨具の砥粒が#3000、実施例1c、1eでは、第3研磨具の砥粒が#2000であるのに対して、比較例1a~1cでは、第3研磨具による特定研磨処理を行わずに、ガラス基板の端面部に、第1研磨具による粗研磨処理および第2研磨具による仕上げ研磨処理を行うに留めた。また、全ての実施例においては、面取り寸法(面取り幅)が60~200μmの範囲内になるように、第3研磨具の移動速度や研削条件を選定し、試料であるガラス基板の全ての端面の表面および裏面との境界部に略平坦な面取り面を形成した。 In Examples 1a, 1b, and 1d, the abrasive grains of the third polishing tool are # 3000, and in Examples 1c and 1e, the abrasive grains of the third polishing tool are # 2000, whereas in Comparative Examples 1a to 1c, Without performing the specific polishing process with the third polishing tool, only the rough polishing process with the first polishing tool and the final polishing process with the second polishing tool were performed on the end surface portion of the glass substrate. In all the examples, the moving speed and grinding conditions of the third polishing tool are selected so that the chamfer dimension (chamfer width) is in the range of 60 to 200 μm, and all the end surfaces of the glass substrate as a sample are selected. A substantially flat chamfered surface was formed at the boundary between the front surface and the back surface.
なお、以上の実施例では、ガラス基板の端面部に略円弧状の研磨面を形成した後に、第3研磨具を使用して、端面の表面および裏面との境界部に面取り面を形成する方法を用いたが、ガラス基板を定盤上に吸着固定した状態で、同一の走行レール上に、第1研磨具、第2研磨具および第3研磨具を設置し、その走行レールに沿って同時に三種の研磨具を走行させることにより、連続的に研磨動作を完了させるようにしてもよい。このようにすれば、より短時間で全ての研磨処理が完了するため、加工効率を著しく上昇させることができ、且つ、各辺の寸法が1000mm以上である大型サイズのガラス基板の研磨処理工程において、その取り扱いが容易となる。また、サイズの小さなガラス基板については、3種の研磨具をガラス基板の辺と平行になるように設置し、ガラス基板を搬送ベルト等の搬送手段を用いて搬送させながら連続して各研磨処理を行う方法を用いてもよい。 In the above embodiment, a method of forming a chamfered surface at the boundary between the front surface and the back surface of the end surface using the third polishing tool after forming a substantially arc-shaped polished surface on the end surface portion of the glass substrate. However, the first polishing tool, the second polishing tool, and the third polishing tool are installed on the same traveling rail in a state where the glass substrate is sucked and fixed on the surface plate, and simultaneously along the traveling rail. You may make it complete | finish polishing operation | movement continuously by making 3 types of grinding | polishing tools drive | work. In this way, since all polishing processes are completed in a shorter time, the processing efficiency can be remarkably increased, and in the polishing process step of a large-sized glass substrate having a dimension of each side of 1000 mm or more. The handling becomes easy. For glass substrates with small sizes, three types of polishing tools are installed so as to be parallel to the sides of the glass substrate, and each glass substrate is continuously polished while being transported using a transport means such as a transport belt. You may use the method of performing.
一方、実施例1a~1eおよび比較例1a~1cの各ガラス基板については、東京精密社製サーフコム590Aを用いて、測定長5.0mmにて粗さ測定を行い、JIS B0601:2001にてガラス基板の端面および面取り面の十点平均粗さRzjis(Rz1、Rz2)、および粗さ曲線要素の平均長さRSm(RSm1、RSm2)値の各粗さパラメータを算出した。この十点平均粗さRz1、Rz2および粗さ曲線要素の平均長さRSm1、RSm2については、同一の条件で面取り処理を10枚のガラス基板に施した上で、それぞれについて10回測定し、その平均値を算出することによって評価した。その結果を下記の表1、2に示す。 On the other hand, for the glass substrates of Examples 1a to 1e and Comparative Examples 1a to 1c, the roughness was measured at a measurement length of 5.0 mm using Surfcom 590A manufactured by Tokyo Seimitsu Co., Ltd., and the glass was measured according to JIS B0601: 2001. The roughness parameters of the ten-point average roughness Rzjis (Rz 1 , Rz 2 ) and the average length RSm (RSm 1 , RSm 2 ) value of the roughness curve element of the end face and chamfered surface of the substrate were calculated. The ten-point average roughness Rz 1 , Rz 2 and the average length RSm 1 , RSm 2 of the roughness curve element were subjected to chamfering treatment on 10 glass substrates under the same conditions, and 10 times for each. Measurements were made and evaluated by calculating the average value. The results are shown in Tables 1 and 2 below.
研磨後のガラス基板の強度については、Orientec社製Tensilon RTA-250を用いた三点曲げ試験法により破壊強度を測定した。曲げ試験のサンプルには、ガラス基板の端面部の辺の中央部を80×15mmのサイズに切り出した試験片を用い、さらに、端面部の頂点(断面略円弧の頂点)を上にして荷重を負荷し、その破損時の荷重を測定し、下記の数1で示される式で計算することにより、破壊応力(端面強度)σを測定した。
Regarding the strength of the polished glass substrate, the breaking strength was measured by a three-point bending test method using Orientec's Tensilon RTA-250. For the sample of the bending test, a test piece obtained by cutting out the central part of the side of the end face of the glass substrate into a size of 80 × 15 mm is used, and the load is applied with the apex of the end face (the apex of the substantially arc of the cross section) facing upward. The fracture stress (end face strength) σ was measured by applying the load, measuring the load at the time of breakage, and calculating by the equation shown in the following
なお、上記の数1で示される式中、Pは破壊荷重、Lは支点間距離、Bはサンプル幅、hはガラス厚みである。 In the above equation (1), P is the breaking load, L is the distance between fulcrums, B is the sample width, and h is the glass thickness.
下記の表1、2には、ガラス基板の破壊応力を記載しているが、これらは各実施例および各比較例のそれぞれの破壊応力を10枚測定し、その最小値(最も強度が小さいもの)を示すものである。さらに、ガラス基板の表面に付着または残存したガラスパーティクルの付着特性を評価するために、各実施例および各比較例のそれぞれのガラス基板を洗浄および乾燥させた後に、ガラス基板の表面に残存したガラスシートあたりの表面のパーティクル値を測定した。パーティクル値は、日立ハイテクノロジーズ社製パーティクル測定装置GI-7200を用いて1μm以上の粒子数の測定を行い、その数値を1平方メートル当りの個数に換算した。その結果を下記の表1、2に示す。また、各実施例および各比較例のそれぞれのガラス基板について、端面の表面および裏面との境界部分におけるチッピングによる段差の残存状態を、顕微鏡にて拡大観察した。その結果を下記の表1、2に示す。この場合、表1、2中、『○』はチッピング段差の存在が認められないものを示し、『△』は微小の段差の残存が観察されるものを示し、『×』は大きな段差の残存が観察されるものを示している。 In Tables 1 and 2 below, the breaking stress of the glass substrate is described, and these are measured for 10 breaking stresses of each Example and each Comparative Example, and the minimum value (the one with the smallest strength) is measured. ). Furthermore, in order to evaluate the adhesion characteristics of the glass particles adhering to or remaining on the surface of the glass substrate, the glass remaining on the surface of the glass substrate after washing and drying each glass substrate of each Example and each Comparative Example The surface particle value per sheet was measured. For the particle value, the number of particles of 1 μm or more was measured using a particle measuring device GI-7200 manufactured by Hitachi High-Technologies Corporation, and the numerical value was converted to the number per square meter. The results are shown in Tables 1 and 2 below. Further, with respect to each glass substrate of each example and each comparative example, the remaining state of the step due to chipping at the boundary portion between the front surface and the back surface of the end face was magnified and observed with a microscope. The results are shown in Tables 1 and 2 below. In this case, in Tables 1 and 2, “○” indicates that no chipping level difference is observed, “Δ” indicates that a small level difference is observed, and “×” indicates a large level level remaining. Indicates what is observed.
なお、面取り面の特定研磨処理時におけるガラス基板の表面とこれに隣接する面取り面の表面側への接線とのなす角度α(図1参照)、およびガラス基板の裏面とこれに隣接する面取り面の裏面側への接線とのなす角βの実測値と、面取り面の幅Wの測定値とを、下記の表3に示す。 Note that an angle α (see FIG. 1) between the surface of the glass substrate and the tangent to the surface side of the chamfering surface adjacent to the surface of the glass substrate during the specific polishing treatment of the chamfered surface, and the back surface of the glass substrate and the chamfering surface adjacent to the surface. Table 3 below shows the actual measurement value of the angle β formed by the tangent to the back surface side and the measured value of the width W of the chamfered surface.
上記の表1、2によれば、本発明の実施例1a~1eの何れもが、ガラス基板の端面の表面および裏面との境界部に、十点平均粗さが小さく鏡面に近いのは勿論のこと、十分な幅を有する面取り面が形成されており、比較例1a~1cの場合のように面取り面を形成していないガラス基板に比して、著しく高い破壊強度(すなわち端面強度が160MPa超)を有することが確認された。また、各実施例の面取り面においては、チッピングによる研磨境界部の段差や微小クラックが確認されず、さらにはガラスパーティクルの付着等の全てにおいて良好または極めて良好な結果を示すことが確認された。 According to Tables 1 and 2 above, it is a matter of course that all of Examples 1a to 1e of the present invention have a small ten-point average roughness at the boundary between the front surface and the back surface of the end surface of the glass substrate and are close to a mirror surface. In other words, a chamfered surface having a sufficient width is formed, and the fracture strength (that is, the end surface strength is 160 MPa) is significantly higher than that of a glass substrate having no chamfered surface as in Comparative Examples 1a to 1c. Super). In addition, on the chamfered surface of each example, it was confirmed that no level difference or minute cracks at the polishing boundary due to chipping were observed, and that good or extremely good results were exhibited in all of the adhesion of glass particles and the like.
したがって、本発明の各実施例に係るガラス基板は、後工程での破損を誘起し難く、極めて高強度なものになると共に、端面に起因するガラスパーティクルの発生が極めて少なく、液晶ディスプレイやプラズマディスプレイさらには有機EL等のように、高解像度の表示ディスプレイに使用される場合でも、ガラス基板上に表示素子やデバイスを形成する際に発生する断線不良等を効果的に抑制することができる。 Therefore, the glass substrate according to each embodiment of the present invention hardly induces breakage in the post-process, becomes extremely high in strength, and generates very little glass particles due to the end face. Further, even when used in a high-resolution display such as an organic EL, it is possible to effectively suppress a disconnection failure that occurs when a display element or device is formed on a glass substrate.
また、本発明の各実施例の場合、研削速度を100mm/minから400mm/minまで増大させても、適宜研磨具の研磨板を選択して研削条件を設定すれば、同様の面取り面を効率よく得ることができ、工程の高効率化が可能となる。 Further, in the case of each embodiment of the present invention, even if the grinding speed is increased from 100 mm / min to 400 mm / min, the same chamfered surface can be efficiently obtained by appropriately selecting the polishing plate of the polishing tool and setting the grinding conditions. It can be obtained well and the efficiency of the process can be increased.
一方、各比較例では、研磨具の移動速度が200mm/secや400mm/secである場合のみならず、100mm/secまで低速にしても、端面部の最低破壊強度は比較的低く、強度の低い端面部への搬送手段の接触や熱応力集中に起因して、破損を誘発するおそれがある。また、何れの比較例についても、パーティクル値は比較的高く、しかも境界部のチッピング段差が大きいため、例えば洗浄時および乾燥時や搬送時および梱包時等の工程において、境界部のチッピング部よりガラスパーティクルがガラス基板上に剥離付着して、表示素子やデバイスを形成する際に断線不良を起こすおそれがある。したがって、本発明の各実施例に係るガラス基板は、これらの比較例に係るガラス基板に比して、破壊強度とガラスパーティクルとの何れの点においても極めて優れていることが確認された。 On the other hand, in each comparative example, not only when the moving speed of the polishing tool is 200 mm / sec or 400 mm / sec but also at a low speed of 100 mm / sec, the minimum fracture strength of the end face is relatively low and the strength is low. There is a risk of causing breakage due to the contact of the conveying means to the end face and the concentration of thermal stress. In any of the comparative examples, since the particle value is relatively high and the chipping level difference at the boundary is large, for example, in the process such as cleaning, drying, transporting, and packing, the glass is higher than the chipping part at the boundary. Particles may peel off and adhere to the glass substrate, causing a disconnection failure when forming a display element or device. Therefore, it was confirmed that the glass substrate according to each example of the present invention was extremely excellent in both the breaking strength and the glass particle as compared with the glass substrate according to these comparative examples.
本発明者等は、上述の図1に例示したガラス基板の面取り面における突出谷部深さRvkに関する効果を確認すべく、本発明の実施例2a~2dと比較例との対比を、以下に示すようにして行った。これらの実施例および比較例は何れについても、ガラス原板として、オーバーフローダウンドロー法で成形された日本電気硝子株式会社製OA-10(強化処理は施されていない)を用いた。 In order to confirm the effect of the protrusion valley depth Rvk on the chamfered surface of the glass substrate illustrated in FIG. 1 as described above, the inventors of the present invention compare the following Examples 2a to 2d with Comparative Examples. As shown. In each of these examples and comparative examples, OA-10 manufactured by Nippon Electric Glass Co., Ltd. (not subjected to strengthening treatment) formed by the overflow downdraw method was used as a glass original plate.
下記の表4に示す本発明の実施例2a~2dおよび比較例については、用いる試料として、板厚が700μmのガラス原板にスクライブを入れて折割り分割することにより、短辺寸法が1500mmおよび長辺寸法が1800mmのガラス基板を得た。具体的なガラス原板の分割手法は、ダイヤモンドチップでガラス原板の表面にスクライブを入れて、そのスクライブ線に引張り応力が生じるようにガラス原板に曲げモーメントを作用させることにより折割り分割を行った。なお、その他の分割手法として、ガラス原板の一部にダイヤモンドホイールなどで初期傷(イニシャルクラック)を形成し、この部位にレーザーを照射して局部加熱を行った後、冷媒を吹き付けて急激に冷却をすることによりイニシャルクラックを進展させ、これによりガラス原板を割断させるようにしてもよい。但し、このようなレーザー割断による場合には、ガラス基板の端面は平坦面となるため、この実施例及び比較例に係るガラス基板とは異なる端面形状となる。 For Examples 2a to 2d and Comparative Examples of the present invention shown in Table 4 below, as a sample to be used, a glass original plate having a plate thickness of 700 μm is scribed and divided into two pieces, whereby the short side dimension is 1500 mm and A glass substrate having a side dimension of 1800 mm was obtained. As a specific method for dividing the glass original plate, a scribe was made on the surface of the glass original plate with a diamond tip, and a bending moment was applied to the glass original plate so that a tensile stress was generated on the scribe line. As another division method, initial scratches are formed on a part of the glass original plate with a diamond wheel, etc., and this part is irradiated with laser to perform local heating, and then cooled rapidly by blowing a refrigerant. It is also possible to cause the initial crack to progress by cutting the glass original plate. However, in the case of such laser cleaving, the end surface of the glass substrate is a flat surface, and thus has an end surface shape different from those of the glass substrates according to this example and the comparative example.
このようにして得られたガラス基板の端面に対しては、外周面が円筒面(この実施例及び比較例では外周面が略円弧状に凹んでいる)からなる円柱状の砥石を、その回転軸がガラス基板の表面の法線方向と平行になるように配列させた状態で回転させながら押し当てつつ、その端面の長手方向に相対的に直線移動させることにより、当該端面の研磨処理を行う。この場合、ガラス基板の端面を研磨する砥石としては、砥粒やバインダーの異なる複数種の砥石を用意しておき、先ず砥粒が粗くバインダーの硬い砥石から、次第に砥粒が細かくバインダーが柔らかい砥石に変更した。 With respect to the end surface of the glass substrate thus obtained, a cylindrical grindstone whose outer peripheral surface is a cylindrical surface (in this example and the comparative example, the outer peripheral surface is recessed in a substantially arc shape) is rotated. Polishing of the end surface is performed by moving the shaft relatively linearly in the longitudinal direction of the end surface while rotating while pressing in a state where the shaft is arranged in parallel with the normal direction of the surface of the glass substrate. . In this case, as the grindstone for polishing the end surface of the glass substrate, a plurality of types of grindstones having different abrasive grains and binders are prepared. First, the grindstone is rough and the binder is hard, and the grindstone is gradually finer and the binder is softer. Changed to
次に、端面の研磨処理を終えたガラス基板について、端面と表面(裏面)との境界部に略平面状の面取り面を研磨により形成した。この場合、面取り面の研磨に使用される砥石は、上述の端面の研磨用の砥石と比較して、砥粒が細かくバインダーが柔らかいことが必須の要件となる。面取り面の研磨用の砥石は、面取り面に押し当てる面が、円筒面や円錐面であってもよく、また略平面状の円形端面や円環端面であってもよく、更にはベルトに砥粒を固定した研磨布の表面であってもよい。そして、これらの砥石(または研磨布)は、ガラス基板の面取り面の長手方向に対して相対的に直線移動する。 Next, a substantially flat chamfered surface was formed by polishing at the boundary between the end surface and the front surface (back surface) of the glass substrate that had been subjected to the end surface polishing treatment. In this case, it is essential that the grindstone used for chamfered surface polishing is finer in abrasive grains and softer in binder than the grindstone for polishing the end face described above. In the grindstone for polishing a chamfered surface, the surface pressed against the chamfered surface may be a cylindrical surface or a conical surface, or may be a substantially flat circular end surface or an annular end surface. The surface of the polishing cloth which fixed the grain may be sufficient. These grindstones (or polishing cloths) move linearly relative to the longitudinal direction of the chamfered surface of the glass substrate.
下記の表4に示す実施例2aについて具体的に説明をすると、先ず、分割後のガラス基板を定盤上に載置して吸着固定した状態で、図2に示す形態をなす第1研磨具としての粗研磨用回転砥石(#400の砥粒がメタルボンドで固定)の外周面を、ガラス基板の端面部に押し当てつつ直線移動させることにより、断面略円弧形状の粗面である端面部を形成した。次いで、同様に、図2に示す形態をなす第2研磨具としての仕上げ研磨用回転砥石(#1000の砥粒がレジンボンドで固定)の外周面を、ガラス基板の粗研磨後の端面部に押し当てつつ直線移動させることにより、断面略円弧形状に仕上げ研磨された端面を形成した。この後、ガラス基板の端面と表面および裏面とのそれぞれの境界部に対して、第3研磨具で特定研磨処理を行った。第3研磨具としては、円形の基盤上に、樹脂材料にダイヤモンド砥粒(#3000の砥粒)を分散させてなる平板状のダイヤモンド研磨板を固定したものを使用した。特定研磨処理の実行に際しては、ガラス基板の表面および裏面と面取り面の接線とのそれぞれがなす角度(図1の角度α:裏面側も同様)が18°~22°になるように、適宜第3研磨具の角度を調整した上で、第3研磨具とガラス基板との接触面に研削液(研削水)を供給した。そして、所望の面取り面の幅寸法が得られるように、第3研磨具(研磨板)を周速2000m/minで回転させながら、ガラス基板の平面視でのコーナー部近傍を除く全外周に亘り、特定研磨処理を行った。以上のようにして、実施例2aのガラス基板を得た。なお、上記の砥粒の大きさは、JIS R6001:1998に準拠している。この場合、実施例2b、2c、2dおよび比較例については、第1、第2、第3研磨具の砥粒がそれぞれ実施例2aと相違している。 Example 2a shown in Table 4 below will be described specifically. First, the first polishing tool having the form shown in FIG. 2 in a state where the divided glass substrate is placed on the surface plate and fixed by suction. As a rough grinding rotary grindstone (# 400 abrasive grains fixed by metal bond), the outer peripheral surface is linearly moved while being pressed against the end surface portion of the glass substrate, so that the end surface portion is a rough surface having a substantially arc-shaped cross section. Formed. Next, similarly, the outer peripheral surface of the final polishing rotary grindstone (# 1000 abrasive grains fixed by resin bond) as the second polishing tool having the form shown in FIG. 2 is used as the end surface portion after rough polishing of the glass substrate. An end face that was finished and polished into a substantially arc shape in cross section was formed by linearly moving while pressing. Thereafter, a specific polishing process was performed with a third polishing tool on each boundary portion between the end surface, the front surface, and the back surface of the glass substrate. As the third polishing tool, a flat diamond polishing plate obtained by dispersing diamond abrasive grains (# 3000 abrasive grains) in a resin material on a circular base was used. When performing the specific polishing process, the angle formed by the front and back surfaces of the glass substrate and the tangent line of the chamfered surface (angle α in FIG. 1; the same applies to the back surface side) is 18 ° to 22 ° as appropriate. After adjusting the angle of the 3 polishing tool, a grinding liquid (grinding water) was supplied to the contact surface between the third polishing tool and the glass substrate. Then, while rotating the third polishing tool (polishing plate) at a peripheral speed of 2000 m / min so as to obtain a desired chamfered surface width dimension, it extends over the entire outer periphery excluding the vicinity of the corner portion in plan view of the glass substrate. Specific polishing treatment was performed. As described above, a glass substrate of Example 2a was obtained. In addition, the size of the above-mentioned abrasive grains conforms to JIS R6001: 1998. In this case, about Example 2b, 2c, 2d and a comparative example, the abrasive grain of the 1st, 2nd, 3rd polishing tool is different from Example 2a, respectively.
下記の表4に示すガラス基板の面取り面の突出谷部深さRvk、および端面の突出谷部深さRvkは、東京精密社製サーフコム590Aを用いて、測定長5.0mmに亘って粗さ測定を行い、JIS B0601:2001にて各Rvkの値を算出した。この2種の突出谷部深さRvkは何れも、各々について同一の条件で面取り面を10枚のガラス基板に施した上で、それらについて10回測定し、その平均値を算出することによって評価した。更に、これらと同時に、ガラス基板の端面の最大断面高さPtと、面取り面の最大断面高さPtとを求めた。加えて、ガラス基板の撓みや熱応力による破損し易さの目安として、ガラス基板の端面強度を求めた。ガラス基板の端面強度については、Orientec社製Tensilon RTA-250を用いた三点曲げ試験法により破壊強度を測定し、これを端面強度とした。曲げ試験のサンプルには、ガラス基板の端面部の辺の中央部を80×15mmのサイズに切り出した試験片を用い、さらに端面部の頂点(断面略円弧の頂点)を上にして荷重を負荷し、その破損時の荷重を測定し、既述の数1で示される式で計算することにより、破壊応力(端面強度)σを測定した。 The protrusion valley depth Rvk of the chamfered surface of the glass substrate and the protrusion valley depth Rvk of the end face shown in Table 4 below are measured over a measurement length of 5.0 mm using a surfcom 590A manufactured by Tokyo Seimitsu Co., Ltd. The measurement was performed, and the value of each Rvk was calculated according to JIS B0601: 2001. Each of these two types of protruding valley depth Rvk was evaluated by measuring the chamfered surface on 10 glass substrates under the same conditions for each of the 10 glass substrates, measuring them 10 times, and calculating an average value thereof. did. At the same time, the maximum cross-sectional height Pt of the end surface of the glass substrate and the maximum cross-sectional height Pt of the chamfered surface were determined. In addition, the strength of the end face of the glass substrate was determined as a measure of the ease with which the glass substrate was bent or damaged by thermal stress. For the end face strength of the glass substrate, the fracture strength was measured by a three-point bending test method using Orientsil's Tensilon RTA-250, and this was used as the end face strength. For the sample of the bending test, a test piece obtained by cutting the center part of the end face part of the glass substrate into a size of 80 × 15 mm is used, and a load is applied with the apex of the end face part (vertical arc of the cross section) facing upward. Then, the load at the time of breakage was measured, and the fracture stress (end surface strength) σ was measured by calculating with the above-described equation (1).
以上のようにして求めた面取り面の突出谷部深さRvk、端面強度、面取り面の最大断面高さPt、および端面の最大断面高さPtを、下記の表4に示す。 Table 4 below shows the protruding valley depth Rvk of the chamfered surface, the end surface strength, the maximum cross-sectional height Pt of the chamfered surface, and the maximum cross-sectional height Pt of the end surface obtained as described above.
上記の表4中、端面の最大断面高さPtおよび面取り面の最大断面高さPtは、JIS B0601:1982での最大高さRmaxに相当するため、既述の特許文献1、2の表面最大凹凸に相当するものと考えることができる。そして、比較例のガラス基板は、その面取り面の最大高さPtは、5.57μmであって7μm(0.007mm)以下であり、且つ端面の最大高さPtは、7.44μmであって40μm(0.04mm)以下であることから、既述の特許文献1、2に記載された数値範囲の条件を満たしている。しかしながら、この比較例に係るガラス基板は、FPD、有機EL、および太陽電池などの製造工程において、破損が頻繁に起きていることを本発明者等は確認している。これは、比較例に係るガラス基板は、端面強度が不十分であったことを意味している。この事を勘案すれば、端面強度は、160MPaが必要であると把握することができる。そして、本発明の実施例2a~2dは、面取り面の突出谷部深さRvkが0.95以下であることにより端面強度が160MPaを超えており、十分な端面強度を有していることが把握できる。したがって、ガラス基板の面取り面の突出谷部深さRvkを0.95以下と規定することは、ガラス基板の撓みや不当な温度分布に起因する引張り応力の発生を抑制して応力集中を可及的に低減させ、ガラス基板の破損を防止する上で、大きな意義があることを確認することができた。
In Table 4 above, the maximum cross-sectional height Pt of the end face and the maximum cross-sectional height Pt of the chamfered surface correspond to the maximum height Rmax in JIS B0601: 1982. It can be considered that it corresponds to unevenness. The maximum height Pt of the chamfered surface of the glass substrate of the comparative example is 5.57 μm and 7 μm (0.007 mm) or less, and the maximum height Pt of the end surface is 7.44 μm. Since it is 40 μm (0.04 mm) or less, the conditions of the numerical ranges described in
また、ガラス原板をレーザー割断して分割されたガラス基板は、その平坦面をなす端面の面性状が、表裏面と同様に鏡面に近いことから、このガラス基板の当該境界部に上記と同様に面取り面を形成した場合であっても、その面取り面の突出谷部深さRvkが0.95以下であれば、上記の表4に示す好結果と同等或いはそれ以上の結果が得られるものと推認できる。 In addition, since the glass substrate divided by laser cutting the glass original plate is close to a mirror surface as in the case of the front and back surfaces, the surface property of the flat surface of the glass substrate is similar to the above on the boundary portion of the glass substrate. Even when a chamfered surface is formed, if the projecting valley depth Rvk of the chamfered surface is 0.95 or less, a result equal to or better than the good results shown in Table 4 above can be obtained. I can guess.
本発明者等は、上述の図1に例示したガラス基板の面取り面における粗さ曲線の二乗平均平方根傾斜RΔqに関する効果を確認すべく、本発明の実施例3a~3dと比較例との対比を、以下に示すようにして行った。これらの実施例および比較例は何れについても、ガラス原板として、オーバーフローダウンドロー法で成形された日本電気硝子株式会社製OA-10(強化処理は施されていない)を用いた。 In order to confirm the effect on the root mean square slope RΔq of the roughness curve on the chamfered surface of the glass substrate illustrated in FIG. 1 described above, the inventors of the present invention compared the Examples 3a to 3d of the present invention with the comparative example. This was performed as shown below. In each of these examples and comparative examples, OA-10 manufactured by Nippon Electric Glass Co., Ltd. (not subjected to strengthening treatment) formed by the overflow downdraw method was used as a glass original plate.
下記の表5に示す本発明の実施例3a~3dおよび比較例については、用いる試料として、板厚が700μmのガラス原板にスクライブを入れて折割り分割することにより、短辺寸法が1500mmおよび長辺寸法が1800mmのガラス基板を得た。具体的なガラス原板の分割手法は、ダイヤモンドチップでガラス原板の表面にスクライブを入れて、そのスクライブ線に引張り応力が生じるようにガラス原板に曲げモーメントを作用させることにより折割り分割を行った。なお、その他の分割手法として、ガラス原板の一部にダイヤモンドホイールなどで初期傷(イニシャルクラック)を形成し、この部位にレーザーを照射して局部加熱を行った後、冷媒を吹き付けて急激に冷却をすることによりイニシャルクラックを進展させ、これによりガラス原板を割断させるようにしてもよい。但し、このようなレーザー割断による場合には、ガラス基板の端面は平坦面となるため、この実施例及び比較例に係るガラス基板とは異なる端面形状となる。 For Examples 3a to 3d and Comparative Examples of the present invention shown in Table 5 below, as a sample to be used, a short side dimension of 1500 mm and a long length was obtained by putting a scribe into a glass original plate having a plate thickness of 700 μm and splitting it. A glass substrate having a side dimension of 1800 mm was obtained. As a specific method for dividing the glass original plate, a scribe was made on the surface of the glass original plate with a diamond tip, and a bending moment was applied to the glass original plate so that a tensile stress was generated on the scribe line. As another division method, initial scratches are formed on a part of the glass original plate with a diamond wheel, etc., and this part is irradiated with laser to perform local heating, and then cooled rapidly by blowing a refrigerant. It is also possible to cause the initial crack to progress by cutting the glass original plate. However, in the case of such laser cleaving, the end surface of the glass substrate is a flat surface, and thus has an end surface shape different from those of the glass substrates according to the examples and comparative examples.
このようにして得られたガラス基板の端面に対しては、外周面が円筒面(この実施例及び比較例では外周面が略円弧状に凹んでいる)からなる円柱状の砥石を、その回転軸がガラス基板の表面の法線方向と平行になるように配列させた状態で回転させながら押し当てつつ、その端面の長手方向に相対的に直線移動させることにより、当該端面の研磨処理を行う。この場合、ガラス基板の端面を研磨する砥石としては、砥粒やバインダーの異なる複数種の砥石を用意しておき、先ず砥粒が粗くバインダーの硬い砥石から、次第に砥粒が細かくバインダーが柔らかい砥石に変更した。 With respect to the end surface of the glass substrate thus obtained, a cylindrical grindstone whose outer peripheral surface is a cylindrical surface (in this example and the comparative example, the outer peripheral surface is recessed in a substantially arc shape) is rotated. Polishing of the end surface is performed by moving the shaft relatively linearly in the longitudinal direction of the end surface while rotating while pressing in a state where the shaft is arranged in parallel with the normal direction of the surface of the glass substrate. . In this case, as the grindstone for polishing the end surface of the glass substrate, a plurality of types of grindstones having different abrasive grains and binders are prepared. First, the grindstone is rough and the binder is hard, and the grindstone is gradually finer and the binder is softer. Changed to
次に、端面の研磨処理を終えたガラス基板について、端面と表面(裏面)との境界部に略平面状の面取り面を研磨により形成した。この場合、面取り面の研磨に使用される砥石は、上述の端面の研磨用の砥石と比較して、砥粒が細かくバインダーが柔らかいことが必須の要件となる。面取り面の研磨用の砥石は、面取り面に押し当てる面が、円筒面や円錐面であってもよく、また略平面状の円形端面や円環端面であってもよく、更にはベルトに砥粒を固定した研磨布の表面であってもよい。そして、これらの砥石(または研磨布)は、ガラス基板の面取り面の長手方向に対して相対的に直線移動する。 Next, a substantially flat chamfered surface was formed by polishing at the boundary between the end surface and the front surface (back surface) of the glass substrate that had been subjected to the end surface polishing treatment. In this case, it is essential that the grindstone used for chamfered surface polishing is finer in abrasive grains and softer in binder than the grindstone for polishing the end face described above. In the grindstone for polishing a chamfered surface, the surface pressed against the chamfered surface may be a cylindrical surface or a conical surface, or may be a substantially flat circular end surface or an annular end surface. The surface of the polishing cloth which fixed the grain may be sufficient. These grindstones (or polishing cloths) move linearly relative to the longitudinal direction of the chamfered surface of the glass substrate.
下記の表5に示す実施例3aについて具体的に説明をすると、先ず、分割後のガラス基板を定盤上に載置して吸着固定した状態で、図2に示す形態をなす第1研磨具としての粗研磨用回転砥石(#400の砥粒がメタルボンドで固定)の外周面を、ガラス基板の端面部に押し当てつつ直線移動させることにより、断面略円弧形状の粗面である端面部を形成した。次いで、同様に、図2に示す形態をなす第2研磨具としての仕上げ研磨用回転砥石(#1000の砥粒がレジンボンドで固定)の外周面を、ガラス基板の粗研磨後の端面部に押し当てつつ直線移動させることにより、断面略円弧形状に仕上げ研磨された端面を形成した。この後、ガラス基板の端面と表面および裏面とのそれぞれの境界部に対して、第3研磨具で特定研磨処理を行った。第3研磨具としては、円形の基盤上に、樹脂材料にダイヤモンド砥粒(#3000の砥粒)を分散させてなる平板状のダイヤモンド研磨板を固定したものを使用した。特定研磨処理の実行に際しては、ガラス基板の表面および裏面と面取り面の接線とのそれぞれがなす角度(図1の角度α:裏面側も同様)が18°~22°になるように、適宜第3研磨具の角度を調整した上で、第3研磨具とガラス基板との接触面に研削液(研削水)を供給した。そして、所望の面取り面の幅寸法が得られるように、第3研磨具(研磨板)を周速2000m/minで回転させながら、ガラス基板の平面視でのコーナー部近傍を除く全外周に亘り、特定研磨処理を行った。以上のようにして、実施例3aのガラス基板を得た。なお、上記の砥粒の大きさは、JIS R6001:1998に準拠している。この場合、実施例3b、3c、3dおよび比較例については、第1、第2、第3研磨具の砥粒がそれぞれ実施例3aと相違している。 Example 3a shown in Table 5 below will be described in detail. First, the first polishing tool having the form shown in FIG. 2 in a state where the divided glass substrate is placed on a surface plate and fixed by suction. As a rough grinding rotary grindstone (# 400 abrasive grains fixed by metal bond), the outer peripheral surface is linearly moved while being pressed against the end surface portion of the glass substrate, so that the end surface portion is a rough surface having a substantially arc-shaped cross section. Formed. Next, similarly, the outer peripheral surface of the final polishing rotary grindstone (# 1000 abrasive grains fixed by resin bond) as the second polishing tool having the form shown in FIG. 2 is used as the end surface portion after rough polishing of the glass substrate. An end face that was finished and polished into a substantially arc shape in cross section was formed by linearly moving while pressing. Thereafter, a specific polishing process was performed with a third polishing tool on each boundary portion between the end surface, the front surface, and the back surface of the glass substrate. As the third polishing tool, a flat diamond polishing plate obtained by dispersing diamond abrasive grains (# 3000 abrasive grains) in a resin material on a circular base was used. When performing the specific polishing process, the angle formed by the front and back surfaces of the glass substrate and the tangent line of the chamfered surface (angle α in FIG. 1; the same applies to the back surface side) is 18 ° to 22 ° as appropriate. After adjusting the angle of the 3 polishing tool, a grinding liquid (grinding water) was supplied to the contact surface between the third polishing tool and the glass substrate. Then, while rotating the third polishing tool (polishing plate) at a peripheral speed of 2000 m / min so as to obtain a desired chamfered surface width dimension, it extends over the entire outer periphery excluding the vicinity of the corner portion in plan view of the glass substrate. Specific polishing treatment was performed. As described above, a glass substrate of Example 3a was obtained. In addition, the size of the above-mentioned abrasive grains conforms to JIS R6001: 1998. In this case, about Example 3b, 3c, 3d and a comparative example, the abrasive grain of a 1st, 2nd, 3rd polishing tool is different from Example 3a, respectively.
下記の表5に示すガラス基板における面取り面の粗さ曲線の二乗平均平方根傾斜RΔq、および端面の粗さ曲線の二乗平均平方根傾斜RΔqは、東京精密社製サーフコム590Aを用いて、測定長5.0mmに亘って粗さ測定を行い、JIS BO601:2001にて各RΔqの値を算出した。この2種の二乗平均平方根傾斜RΔqは何れも、各々について同一の条件で面取り面を10枚のガラス基板に施した上で、それらについて10回測定し、その平均値を算出することによって評価した。更に、これらと同時に、ガラス基板の端面の最大断面高さPtと、面取り面の最大断面高さPtとを求めた。加えて、ガラス基板の撓みや熱応力による破損し易さの目安として、ガラス基板の端面強度を求めた。ガラス基板の端面強度については、Orientec社製Tensilon RTA-250を用いた三点曲げ試験法により破壊強度を測定し、これを端面強度とした。曲げ試験のサンプルには、ガラス基板の端面部の辺の中央部を80×15mmのサイズに切り出した試験片を用い、さらに端面部の頂点(断面略円弧の頂点)を上にして荷重を負荷し、その破損時の荷重を測定し、既述の数1で示される式で計算することにより、破壊応力(端面強度)σを測定した。 The root mean square slope RΔq of the chamfered surface roughness curve and the root mean square slope RΔq of the end surface roughness curve of the glass substrate shown in Table 5 below were measured using a Surfcom 590A manufactured by Tokyo Seimitsu Co., Ltd. The roughness was measured over 0 mm, and the value of each RΔq was calculated according to JIS BO601: 2001. Each of these two types of root-mean-square slope RΔq was evaluated by measuring a chamfered surface on 10 glass substrates under the same conditions for each of them, measuring them 10 times, and calculating the average value. . At the same time, the maximum cross-sectional height Pt of the end surface of the glass substrate and the maximum cross-sectional height Pt of the chamfered surface were determined. In addition, the strength of the end face of the glass substrate was determined as a measure of the ease with which the glass substrate is bent or damaged by thermal stress. With respect to the end face strength of the glass substrate, the fracture strength was measured by a three-point bending test method using Orientsil's Tensilon RTA-250, and this was used as the end face strength. For the sample of the bending test, a test piece obtained by cutting the center part of the side of the end face of the glass substrate into a size of 80 × 15 mm is used, and a load is applied with the apex of the end face (vertical arc of the cross section) facing upward. Then, the load at the time of breakage was measured, and the fracture stress (end surface strength) σ was measured by calculating with the above-described equation (1).
以上のようにして求めた面取り面の二乗平均平方根傾斜RΔq、端面強度、面取り面の最大断面高さPt、および端面の最大断面高さPtを、下記の表5に示す。 Table 5 below shows the root mean square slope RΔq of the chamfered surface, the end surface strength, the maximum cross-sectional height Pt of the chamfered surface, and the maximum cross-sectional height Pt of the end surface obtained as described above.
上記の表5中、端面の最大断面高さPtおよび面取り面の最大断面高さPtは、JIS
B0601:1982での最大高さRmaxに相当するため、既述の特許文献1、2の表面最大凹凸に相当するものと考えることができる。そして、比較例のガラス基板は、その面取り面の最大高さPtは、5.57μmであって7μm(0.007mm)以下であり、且つ端面の最大高さPtは、7.44μmであって40μm(0.04mm)以下であることから、既述の特許文献1、2に記載された数値範囲の条件を満たしている。しかしながら、この比較例に係るガラス基板は、FPD、有機EL、および太陽電池などの製造工程において、破損が頻繁に起きていることを本発明者等は確認している。これは、比較例に係るガラス基板は、端面強度が不十分であったことを意味している。この事を勘案すれば、端面強度は、160MPaが必要であると把握することができる。そして、本発明の実施例3a~3dは、面取り面の二乗平均平方根傾斜RΔqが0.10以下であることにより端面強度が160MPaを超えており、十分な端面強度を有していることが把握できる。したがって、ガラス基板の面取り面の二乗平均平方根傾斜RΔqを0.10以下と規定することは、ガラス基板の撓みや不当な温度分布に起因する引張り応力の発生を抑制して応力集中を可及的に低減させ、ガラス基板の破損を防止する上で、大きな意義があることを確認することができた。
In Table 5 above, the maximum cross-sectional height Pt of the end surface and the maximum cross-sectional height Pt of the chamfered surface are JIS
Since it corresponds to the maximum height Rmax in B0601: 1982, it can be considered that it corresponds to the maximum surface unevenness of
また、ガラス原板をレーザー割断して分割されたガラス基板は、その平坦面をなす端面の面性状が、表裏面と同様に鏡面に近いことから、このガラス基板の当該境界部に上記と同様に面取り面を形成した場合であっても、その面取り面の二乗平均平方根傾斜RΔqが0.10以下であれば、上記の表5に示す好結果と同等或いはそれ以上の結果が得られるものと推認できる。 In addition, since the glass substrate divided by laser cutting the glass original plate is close to a mirror surface as in the case of the front and back surfaces, the surface property of the flat surface of the glass substrate is similar to the above on the boundary portion of the glass substrate. Even when a chamfered surface is formed, if the root mean square slope RΔq of the chamfered surface is 0.10 or less, it is estimated that a result equal to or better than the good results shown in Table 5 above can be obtained. it can.
本発明者等は、上述の図1に例示したガラス基板の面取り面における最大谷深さRvに関する効果を確認すべく、本発明の実施例4a~4dと比較例との対比を、以下に示すようにして行った。これらの実施例および比較例は何れについても、ガラス原板として、オーバーフローダウンドロー法で成形された日本電気硝子株式会社製OA-10(強化処理は施されていない)を用いた。 In order to confirm the effect of the maximum valley depth Rv on the chamfered surface of the glass substrate illustrated in FIG. 1 as described above, the present inventors show the comparison between Examples 4a to 4d of the present invention and the comparative example. It was done like that. In each of these examples and comparative examples, OA-10 manufactured by Nippon Electric Glass Co., Ltd. (not subjected to strengthening treatment) formed by the overflow downdraw method was used as a glass original plate.
下記の表6に示す本発明の実施例4a~4dおよび比較例については、用いる試料として、板厚が700μmのガラス原板にスクライブを入れて折割り分割することにより、短辺寸法が1500mmおよび長辺寸法が1800mmのガラス基板を得た。具体的なガラス原板の分割手法は、ダイヤモンドチップでガラス原板の表面にスクライブを入れて、そのスクライブ線に引張応力が生じるようにガラス原板に曲げモーメントを作用させることにより折割り分割を行った。なお、その他の分割手法として、ガラス原板の一部にダイヤモンドホイールなどで初期傷(イニシャルクラック)を形成し、この部位にレーザーを照射して局部加熱を行った後、冷媒を吹き付けて急激に冷却をすることによりイニシャルクラックを進展させ、これによりガラス原板を割断させるようにしてもよい。但し、このようなレーザー割断による場合には、ガラス基板の端面は平坦面となるため、この実施例及び比較例に係るガラス基板とは異なる端面形状となる。 For Examples 4a to 4d and Comparative Examples of the present invention shown in Table 6 below, as a sample to be used, a short side dimension of 1500 mm and a long length was obtained by putting a scribe into a glass original plate having a plate thickness of 700 μm and splitting it. A glass substrate having a side dimension of 1800 mm was obtained. As a specific method for dividing the glass original plate, a scribe was made on the surface of the glass original plate with a diamond tip, and a bending moment was applied to the glass original plate so that a tensile stress was generated on the scribe line. As another division method, initial scratches are formed on a part of the glass original plate with a diamond wheel, etc., and this part is irradiated with laser to perform local heating, and then cooled rapidly by blowing a refrigerant. It is also possible to cause the initial crack to progress by cutting the glass original plate. However, in the case of such laser cleaving, the end surface of the glass substrate is a flat surface, and thus has an end surface shape different from those of the glass substrates according to the examples and comparative examples.
このようにして得られたガラス基板の端面に対しては、外周面が円筒面(この実施例及び比較例では外周面が略円弧状に凹んでいる)からなる円柱状の砥石を、その回転軸がガラス基板の表面の法線方向と平行になるように配列させた状態で回転させながら押し当てつつ、その端面の長手方向に相対的に直線移動させることにより、当該端面の研磨処理を行う。この場合、ガラス基板の端面を研磨する砥石としては、砥粒やバインダーの異なる複数種の砥石を用意しておき、先ず砥粒が粗くバインダーの硬い砥石から、次第に砥粒が細かくバインダーが柔らかい砥石に変更した。 With respect to the end surface of the glass substrate thus obtained, a cylindrical grindstone whose outer peripheral surface is a cylindrical surface (in this example and the comparative example, the outer peripheral surface is recessed in a substantially arc shape) is rotated. Polishing of the end surface is performed by moving the shaft relatively linearly in the longitudinal direction of the end surface while rotating while pressing in a state where the shaft is arranged in parallel with the normal direction of the surface of the glass substrate. . In this case, as the grindstone for polishing the end surface of the glass substrate, a plurality of types of grindstones having different abrasive grains and binders are prepared. First, the grindstone is rough and the binder is hard, and the grindstone is gradually finer and the binder is softer. Changed to
次に、端面の研磨処理を終えたガラス基板について、端面と表面(裏面)との境界部に略平面状の面取り面を研磨により形成した。この場合、面取り面の研磨に使用される砥石は、上述の端面の研磨用の砥石と比較して、砥粒が細かくバインダーが柔らかいことが必須の要件となる。面取り面の研磨用の砥石は、面取り面に押し当てる面が、円筒面や円錐面であってもよく、また略平面状の円形端面や円環端面であってもよく、更にはベルトに砥粒を固定した研磨布の表面であってもよい。そして、これらの砥石(または研磨布)は、ガラス基板の面取り面の長手方向に対して相対的に直線移動する。 Next, a substantially flat chamfered surface was formed by polishing at the boundary between the end surface and the front surface (back surface) of the glass substrate that had been subjected to the end surface polishing treatment. In this case, it is essential that the grindstone used for chamfered surface polishing is finer in abrasive grains and softer in binder than the grindstone for polishing the end face described above. In the grindstone for polishing a chamfered surface, the surface pressed against the chamfered surface may be a cylindrical surface or a conical surface, or may be a substantially flat circular end surface or an annular end surface. The surface of the polishing cloth which fixed the grain may be sufficient. These grindstones (or polishing cloths) move linearly relative to the longitudinal direction of the chamfered surface of the glass substrate.
下記の表6に示す実施例4aについて具体的に説明をすると、先ず、分割後のガラス基板を定盤上に載置して吸着固定した状態で、図2に示す形態をなす第1研磨具としての粗研磨用回転砥石(#400の砥粒がメタルボンドで固定)の外周面を、ガラス基板の端面部に押し当てつつ直線移動させることにより、断面略円弧形状の粗面である端面部を形成した。次いで、同様に、図2に示す形態をなす第2研磨具としての仕上げ研磨用回転砥石(#1000の砥粒がレジンボンドで固定)の外周面を、ガラス基板の粗研磨後の端面部に押し当てつつ直線移動させることにより、断面略円弧形状に仕上げ研磨された端面を形成した。この後、ガラス基板の端面と表面および裏面とのそれぞれの境界部に対して、第3研磨具で特定研磨処理を行った。第3研磨具としては、円形の基盤上に、樹脂材料にダイヤモンド砥粒(#3000の砥粒)を分散させてなる平板状のダイヤモンド研磨板を固定したものを使用した。特定研磨処理の実行に際しては、ガラス基板の表面および裏面と面取り面の接線とのそれぞれがなす角度(図1の角度α:裏面側も同様)が18°~22°になるように、適宜第3研磨具の角度を調整した上で、第3研磨具とガラス基板との接触面に研削液(研削水)を供給した。そして、所望の面取り面の幅寸法が得られるように、第3研磨具(研磨板)を周速2000m/minで回転させながら、ガラス基板の平面視でのコーナー部近傍を除く全外周に亘り、特定研磨処理を行った。以上のようにして、実施例4aのガラス基板を得た。なお、上記の砥粒の大きさは、JIS R6001:1998に準拠している。この場合、実施例4b、4c、4dおよび比較例については、第1、第2、第3研磨具の砥粒がそれぞれ実施例4aと相違している。 Example 4a shown in Table 6 below will be described specifically. First, the first polishing tool having the form shown in FIG. 2 in a state where the divided glass substrate is placed on a surface plate and fixed by suction. As a rough grinding rotary grindstone (# 400 abrasive grains fixed by metal bond), the outer peripheral surface is linearly moved while being pressed against the end surface portion of the glass substrate, so that the end surface portion is a rough surface having a substantially arc-shaped cross section. Formed. Next, similarly, the outer peripheral surface of the final polishing rotary grindstone (# 1000 abrasive grains fixed by resin bond) as the second polishing tool having the form shown in FIG. 2 is used as the end surface portion after rough polishing of the glass substrate. An end face that was finished and polished into a substantially arc shape in cross section was formed by linearly moving while pressing. Thereafter, a specific polishing process was performed with a third polishing tool on each boundary portion between the end surface, the front surface, and the back surface of the glass substrate. As the third polishing tool, a flat diamond polishing plate obtained by dispersing diamond abrasive grains (# 3000 abrasive grains) in a resin material on a circular base was used. When performing the specific polishing process, the angle formed by the front and back surfaces of the glass substrate and the tangent line of the chamfered surface (angle α in FIG. 1; the same applies to the back surface side) is 18 ° to 22 ° as appropriate. After adjusting the angle of the 3 polishing tool, a grinding liquid (grinding water) was supplied to the contact surface between the third polishing tool and the glass substrate. Then, while rotating the third polishing tool (polishing plate) at a peripheral speed of 2000 m / min so as to obtain a desired chamfered surface width dimension, it extends over the entire outer periphery excluding the vicinity of the corner portion in plan view of the glass substrate. Specific polishing treatment was performed. As described above, a glass substrate of Example 4a was obtained. In addition, the size of the above-mentioned abrasive grains conforms to JIS R6001: 1998. In this case, about Example 4b, 4c, 4d and a comparative example, the abrasive grain of the 1st, 2nd, 3rd polishing tool is different from Example 4a, respectively.
下記の表6に示すガラス基板における面取り面の最大谷深さRvは、東京精密社製サーフコム590Aを用いて、測定長5.0mmに亘って粗さ測定を行い、JIS B0601:2001にてその値を算出した。この最大谷深さRvは、同一の条件で面取り面を10枚のガラス基板に施した上で、それらについて10回測定し、その平均値を算出することによって評価した。更に、これらと同時に、ガラス基板の端面の最大断面高さPtと、面取り面の最大断面高さPtとを求めた。加えて、ガラス基板の撓みや熱応力による破損し易さの目安として、ガラス基板の端面強度を求めた。ガラス基板の端面強度については、Orientec社製Tensilon RTA-250を用いた三点曲げ試験法により破壊強度を測定し、これを端面強度とした。曲げ試験のサンプルには、ガラス基板の端面部の辺の中央部を80×15mmのサイズに切り出した試験片を用い、さらに端面部の頂点(断面略円弧の頂点)を上にして荷重を負荷し、その破損時の荷重を測定し、既述の数1で示される式で計算することにより、破壊応力(端面強度)σを測定した。 The maximum valley depth Rv of the chamfered surface in the glass substrate shown in Table 6 below is measured with a surfcom 590A manufactured by Tokyo Seimitsu Co., Ltd., and the roughness is measured over a measurement length of 5.0 mm, according to JIS B0601: 2001. The value was calculated. This maximum valley depth Rv was evaluated by measuring 10 times of chamfered surfaces on 10 glass substrates under the same conditions and calculating an average value thereof. At the same time, the maximum cross-sectional height Pt of the end surface of the glass substrate and the maximum cross-sectional height Pt of the chamfered surface were determined. In addition, the strength of the end face of the glass substrate was determined as a measure of the ease with which the glass substrate is bent or damaged by thermal stress. With respect to the end face strength of the glass substrate, the fracture strength was measured by a three-point bending test method using Orientsil's Tensilon RTA-250, and this was used as the end face strength. For the sample of the bending test, a test piece obtained by cutting the center part of the side of the end face of the glass substrate into a size of 80 × 15 mm is used, and a load is applied with the apex of the end face (vertical arc of the cross section) facing upward. Then, the load at the time of breakage was measured, and the fracture stress (end surface strength) σ was measured by calculating with the above-described equation (1).
以上のようにして求めた面取り面の最大谷深さRv、端面強度σ、面取り面の最大断面高さPt、および端面の最大断面高さPtを、下記の表6に示す。 Table 6 below shows the maximum chamfer depth Rv, end face strength σ, maximum cross section height Pt of the chamfered face, and maximum cross section height Pt of the end face obtained as described above.
上記の表6中、端面の最大断面高さPtおよび面取り面の最大断面高さPtは、JIS
B0601:1982での最大高さRmaxに相当するため、既述の特許文献1、2の表面最大凹凸に相当するものと考えることができる。そして、比較例のガラス基板は、その面取り面の最大高さPtが、5.57μmであって7μm(0.007mm)以下であり、且つ端面の最大高さPtは、7.44μmであって40μm(0.04mm)以下であることから、既述の特許文献1、2に記載された数値範囲の条件を満たしている。しかしながら、この比較例に係るガラス基板は、FPD、有機EL、および太陽電池などの製造工程において、破損が頻繁に起きていることを本発明者等は確認している。これは、比較例に係るガラス基板は、端面強度が不十分であったことを意味している。この事を勘案すれば、端面強度は、160MPaが必要であると把握することができる。そして、本発明の実施例4a~4dは、面取り面の最大谷深さRvが2.0μm以下であることにより端面強度が160MPaを超えており、十分な端面強度を有していることが把握できる。したがって、ガラス基板の面取り面の最大谷深さRvを2.0μm以下と規定することは、ガラス基板の撓みや不当な温度分布に起因する引張り応力の発生を抑制して応力集中を可及的に低減させ、ガラス基板の破損を防止する上で、大きな意義があることを確認することができた。
In Table 6 above, the maximum cross-sectional height Pt of the end surface and the maximum cross-sectional height Pt of the chamfered surface are JIS
Since it corresponds to the maximum height Rmax in B0601: 1982, it can be considered that it corresponds to the maximum surface unevenness of
また、ガラス原板をレーザー割断して分割されたガラス基板は、その平坦面をなす端面の面性状が、表裏面と同様に鏡面に近いことから、このガラス基板の当該境界部に上記と同様に面取り面を形成した場合であっても、その面取り面の最大谷深さRvが2.0μm以下であれば、上記の表6に示す好結果と同等或いはそれ以上の結果が得られるものと推認できる。 In addition, since the glass substrate divided by laser cutting the glass original plate is close to a mirror surface as in the case of the front and back surfaces, the surface property of the flat surface of the glass substrate is similar to the above on the boundary portion of the glass substrate. Even when a chamfered surface is formed, if the maximum valley depth Rv of the chamfered surface is 2.0 μm or less, it is estimated that a result equal to or better than the good results shown in Table 6 above can be obtained. it can.
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