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WO2010032468A1 - Élément et dispositif de stockage - Google Patents

Élément et dispositif de stockage Download PDF

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Publication number
WO2010032468A1
WO2010032468A1 PCT/JP2009/004681 JP2009004681W WO2010032468A1 WO 2010032468 A1 WO2010032468 A1 WO 2010032468A1 JP 2009004681 W JP2009004681 W JP 2009004681W WO 2010032468 A1 WO2010032468 A1 WO 2010032468A1
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WIPO (PCT)
Prior art keywords
current
conductor layer
resistance
voltage
semiconductor layer
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Ceased
Application number
PCT/JP2009/004681
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English (en)
Japanese (ja)
Inventor
岡田崇志
飯島光輝
有田浩二
三河巧
富永健司
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Panasonic Corp
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Panasonic Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Definitions

  • the present invention relates to a current suppressing element used in a nonvolatile memory element suitable for high integration and high speed. More specifically, the present invention relates to a current suppressing element (MSM diode) composed of a conductor / semiconductor / conductor. And a memory device using the memory element.
  • MSM diode current suppressing element
  • This resistance change element has a thin film composed mainly of a metal oxide material between two electrodes.
  • the resistance value is changed, and the changed resistance value is preserved even after the application of the electric pulse is stopped. Therefore, when the high resistance state and the low resistance state of the thin film are associated with, for example, “1” and “0” of the binary data, the binary data can be stored in the variable resistance element.
  • the amplitude and pulse width of the electric pulse applied to the thin film of the resistance change element are sufficient to change the physical state of the thin film, and may be any level that does not destroy the thin film. Moreover, you may apply an electrical pulse to the thin film of this resistance change element in multiple times.
  • a storage device (a so-called cross-point storage device) in which a plurality of such variable resistance elements are arranged at each three-dimensional intersection of a plurality of word lines and a plurality of bit lines, a selected resistance
  • write disturb a failure in which the resistance value of the non-selected resistance change element changes due to the bypass current. Therefore, when configuring such a cross-point type storage device, it is necessary to provide a special configuration for preventing the occurrence of write disturb.
  • a detour current to the non-selected resistance change element causes a reverse bias or a zero bias to the diode of the non-selected memory element. It is blocked by adjusting the voltage of the selected / unselected bit lines and word lines to apply. As a result, it is expected to prevent occurrence of write disturb in the cross-point type storage device.
  • data is written to the variable resistance element by applying pulses of the same polarity and different voltages to the variable resistance element. That is, the variable resistance element is a unipolar type.
  • a unipolar diode connected in series with the selected variable resistance element (when a voltage higher than a certain threshold value is applied to the diode, the diode is turned on by forward bias, causing a large current to flow, and the opposite polarity. When the voltage is applied, the diode is turned off by reverse bias and the current hardly flows)) is written with forward bias, and when not selected, it is turned off with reverse bias or zero bias. Disturbance can be prevented.
  • variable resistance element described in Patent Document 1 was a unipolar type as described above, writing disturbance could be prevented by connecting a unipolar diode in series with the variable resistance element.
  • the variable resistance element is formed by applying binary data “1” and “0” and voltage pulses having different polarities to the thin film due to the material constituting the thin film having the resistance changing function.
  • variable resistance element (bipolar type) for writing.
  • a unipolar variable resistance element has a characteristic that, when changing from a low resistance state to a high resistance state (so-called resetting), an electric pulse ( ⁇ 1 ⁇ sec) having a longer pulse width than that in the reverse setting is required. There are many things.
  • bipolar resistance change elements can change resistance with electric pulses having a short pulse width (100 nsec or less) both at the time of setting and resetting, and some are superior to the unipolar type in terms of writing speed.
  • a resistance change element if a diode is connected in series with the resistance change element, a voltage pulse of one polarity can be used for writing data, but a voltage pulse of the other polarity can be used for writing data. It cannot be used. Therefore, in a cross-point memory device including such a bipolar variable resistance element, a unipolar diode such as a Schottky diode cannot be connected in series to the variable resistance element. There is a problem that the occurrence cannot be prevented.
  • This problem can be solved by using a diode that is connected in series with the variable resistance element that has a non-linear electrical resistance characteristic and whose current-voltage characteristic is substantially symmetric with respect to the polarity of the applied voltage.
  • a diode that is connected in series with the variable resistance element that has a non-linear electrical resistance characteristic and whose current-voltage characteristic is substantially symmetric with respect to the polarity of the applied voltage.
  • an element having such characteristics for example, an MIM diode (Metal-Insulator-Metal; meaning metal-insulator-metal), an MSM diode (Metal-Semiconductor-Metal; meaning metal-semiconductor-metal), or Two-terminal elements such as varistors are known.
  • These diodes are referred to as bipolar diodes as opposed to unipolar diodes such as Schottky diodes.
  • FIG. 6 is a characteristic diagram schematically showing the voltage-current characteristics of the current suppressing element.
  • FIG. 6 (a) is a voltage-current characteristic diagram of a bipolar diode
  • FIG. 6 (b) is a Schottky diode or the like. It is a voltage-current characteristic view of a unipolar diode.
  • the unipolar diode exhibits nonlinear electrical resistance characteristics, but its voltage-current characteristics are not symmetrical at all with respect to the polarity of the applied voltage.
  • bipolar diodes such as MIM diodes, MSM diodes, and varistors exhibit non-linear electrical resistance characteristics, and their voltage-current characteristics depend on the polarity of the applied voltage. It is substantially symmetric with respect to it. That is, the change in current with respect to the positive applied voltage and the change in current with respect to the negative applied voltage are substantially point-symmetric with respect to the origin 0.
  • the applied voltage is not more than the first critical voltage (lower limit voltage of range A) and not less than the second critical voltage (upper limit voltage of range B) (that is, range C). Then, the electrical resistance is very high, and when the first critical voltage is exceeded or the second critical voltage is lowered, the electrical resistance rapidly decreases. That is, these two-terminal elements have non-linear electrical resistance characteristics such that a large current flows when the applied voltage exceeds the first critical voltage or falls below the second critical voltage.
  • bipolar diodes with a bipolar memory element and using it as a current suppressing element, it is possible to avoid the occurrence of write disturbance in a cross-point memory device using a bipolar variable resistance element. Can be expected.
  • the resistance value is changed by applying a voltage pulse to the resistance change element, so that the resistance change element is in a high resistance state or a low resistance state.
  • a voltage pulse to the resistance change element, so that the resistance change element is in a high resistance state or a low resistance state.
  • it is necessary to pass a large current through the resistance change element although it greatly depends on the material of the change element and its configuration.
  • a metal oxide material specifically, a Pr—Ca—Mn—O-based material, titanium dioxide, nickel oxide, copper oxide, etc.
  • the variable resistance layer of the variable resistance element at least 1000 ⁇ A.
  • the resistance change characteristic of the resistance change element cannot be obtained unless a current is passed at a current density of / ⁇ m 2 or more.
  • a storage element that does not write data by applying an on-voltage to a storage element in which data is to be written (hereinafter referred to as a selected storage element).
  • an off-voltage is applied to the non-selected memory element.
  • a metal oxide material specifically, PRPr—Ca—Mn—O-based material, titanium dioxide, nickel oxide, copper oxide, etc.
  • selective memory is used as the resistance change layer of the resistance change element.
  • the element requires an applied voltage of 2.0 V, that is, an on voltage of 2.0 V
  • the non-selected memory element requires an applied voltage of 1.0 V, that is, an off voltage of 1.0 V.
  • the current flowing at this on-voltage is large.
  • the ratio of the on-current to the off-current that is, the on-off current ratio obtained by dividing the on-current by the off-current (hereinafter, this ratio is referred to as “on / off-current ratio”) is defined as The larger it is, the better.
  • the on / off current ratio is at least 50 or more.
  • the present invention has been made to solve the above-described conventional problems, and is a current suppressing element connected in series to a bipolar variable resistance element, and is necessary for the resistance change of the variable resistance element, 1000 ⁇ A / ⁇ m 2.
  • a non-volatile memory element capable of flowing the above current and realizing an on / off current ratio of at least 50 to prevent occurrence of a write disturbance and increase a read margin, and a memory device including the same It is intended to provide.
  • a memory element includes a resistance change element that changes its electrical resistance value by applying a positive or negative electric pulse, and maintains the electric resistance value after the change. And a current suppressing element that suppresses a current that flows when the electric pulse is applied to the variable resistance element, wherein the current suppressing element includes a first conductor layer and the first conductor.
  • a tantalum nitride comprising a semiconductor layer provided on the layer and a second conductor layer provided on the semiconductor layer, wherein the first conductor layer or the second conductor layer contains tantalum and nitrogen And the semiconductor layer is made of silicon nitride containing silicon and nitrogen, and the tantalum nitride forming the first or second conductor layer is expressed as TaN X. ⁇ x ⁇ 1.67 Features.
  • the tantalum nitride used for the conductor layer of the current suppressing element is a material that has been used as a barrier layer for copper wiring in the semiconductor field, and the silicon nitride used for the semiconductor layer of the current suppressing element is also It is a material with a track record of use.
  • a current suppressing element is constructed using these materials, it is easy to maintain and maintain the semiconductor production line for producing the current suppressing element, and to divert existing equipment or processing conditions relating to film formation or etching. It is possible to provide a memory element that is excellent in performance.
  • the tantalum nitride used for the first conductor layer or the second conductor layer is more preferably Ta 2 N or Ta 3 N 5 .
  • a storage device includes a plurality of the above-described storage elements according to the present invention, and includes a plurality of bit lines and a plurality of word lines that three-dimensionally intersect the plurality of bit lines, A series circuit of a resistance change element and the current suppressing element, wherein the plurality of storage elements are disposed in each portion where the bit line and the word line intersect three-dimensionally; One end of the circuit is connected to the corresponding bit line, and the other end of the series circuit is connected to the corresponding word line.
  • the configuration of the memory element and the memory device according to the present invention includes a bipolar resistance change element that causes a resistance change by applying electric pulses having different polarities, and combines an MSM type current suppression element according to the present invention with a resistance.
  • a current of 1000 ⁇ A / ⁇ m 2 or more necessary to change the resistance of the change element is allowed to flow, a breakdown is suppressed, and an on / off current ratio of at least 50 can be realized, thereby preventing a write disturbance.
  • FIG. 1 is a block diagram schematically showing a configuration of a memory device of the present invention including a resistance change element as a memory element.
  • FIG. 2 is a cross-sectional view schematically showing a configuration according to the embodiment of the current suppressing element of the present invention.
  • FIG. 3 is a diagram showing voltage-current characteristics of the current suppressing element according to the embodiment of the present invention. 4 shows the ratio x of N to Ta of tantalum nitride, which is the first and second conductor layers according to the embodiment of the present invention, and the breakdown current derived from the voltage-current characteristics of FIG. It is a figure which shows the relationship.
  • FIG. 1 is a block diagram schematically showing a configuration of a memory device of the present invention including a resistance change element as a memory element.
  • FIG. 2 is a cross-sectional view schematically showing a configuration according to the embodiment of the current suppressing element of the present invention.
  • FIG. 3 is a diagram showing voltage-current characteristics of the current suppressing element according to
  • FIG. 5 shows the ratio of N to Ta of tantalum nitride, which is the first and second conductor layers according to the embodiment of the present invention, and the on / off current derived from the voltage-current characteristics of FIG. It is a figure which shows the relationship with ratio.
  • FIG. 6 is a characteristic diagram schematically showing the voltage-current characteristics of the current suppressing element, (a) a characteristic chart of a two-terminal element such as a varistor, and (b) a characteristic chart of a Schottky diode.
  • FIG. 1 is a block diagram schematically showing a configuration of a storage device including storage elements arranged in series with bipolar current suppressing elements and bipolar variable resistance elements according to an embodiment of the present invention. .
  • FIG. 1 only the components necessary for explaining the present invention are shown, and the other components are not shown.
  • the storage device 21 is a so-called cross-point storage device.
  • the storage device 21 configures a storage element array 20 and peripheral circuits (a bit line decoder 4, a read circuit 5, and word line decoders 6 and 7 described later) for driving the storage element array 20. ing.
  • An actual storage element array usually has a plurality of bit lines and a plurality of word lines, but in this specification, as shown in FIG. 1, the configuration of the storage element array can be easily understood.
  • the storage element array 20 including four bit lines BL0 to BL3 and four word lines WL0 to WL3 is illustrated.
  • the four bit lines BL0 to BL3 and the four word lines WL0 to WL3 are arranged so as to three-dimensionally intersect each other at right angles.
  • a storage element 3 (so-called cell) is disposed in each of the three-dimensional intersections 11 between the four bit lines BL0 to BL3 and the four word lines WL0 to WL3.
  • the memory elements 3 are arranged in a matrix of 4 rows and 4 columns.
  • each of the memory elements 3 is constituted by a series circuit of a resistance change element 1 and a current suppression element 2 connected in series to the resistance change element 1.
  • One end and the other end of the series circuit are connected to the bit lines BL0 to BL3 and the word lines WL0 to WL3 corresponding to the solid intersection 11 respectively.
  • bit line decoder 4 As shown in FIG. 1, one end of each of the four bit lines BL0 to BL3 is connected to the bit line decoder 4. The other ends of the bit lines BL0 to BL3 are connected to the read circuit 5. On the other hand, both ends of the four word lines WL0 to WL3 are connected to the word line decoders 6 and 7, respectively.
  • the two word line decoders 6 and 7 are disposed at both ends of the word lines WL0 to WL3, for example, the even-numbered word lines are connected to the word line decoder 6 and the odd-numbered word lines are connected to the word lines.
  • the word lines WL0 to WL3 can be alternately connected to the word line decoder 6 and the word line decoder 7 so as to be connected to the line decoder 7.
  • such a connection form is adopted. With this configuration, the interval between the word lines WL0 to WL3 can be reduced, and the degree of freedom regarding the circuit arrangement of the word line decoders 6 and 7 can be increased.
  • the bit line decoder 4 selects the bit lines BL0 to BL3 in response to a command from a controller (not shown). Further, the word line decoders 6 and 7 select the word lines WL0 to WL3 in accordance with a command from the controller. The bit line decoder 4 and the word line decoders 6 and 7 select the selected bit on the bit lines BL0 to BL3 depending on whether the command from the controller is data writing or data reading. An electric pulse whose voltage is a predetermined write voltage Vw (more precisely, a voltage pulse) or a predetermined read voltage Vr between the line and a selected word line in the word lines WL0 to WL3 An electric pulse (more precisely, a voltage pulse) is applied.
  • Vw more precisely, a voltage pulse
  • Vr predetermined read voltage
  • the reading circuit 5 detects the current value flowing through the selected bit line in the bit lines BL0 to BL3, reads the data stored in the selected storage element 3, and directs this to the controller. Output.
  • peripheral circuits such as the bit line decoder 4, the read circuit 5, and the word line decoders 6 and 7 shown in FIG.
  • the storage device 21 is usually manufactured by a semiconductor manufacturing process.
  • variable resistance element According to the present embodiment, the configuration of the variable resistance element according to the present embodiment will be described in detail.
  • a resistance change element 1 shown in FIG. 1 includes a thin film made of a resistance change material (hereinafter referred to as a “resistance change thin film”) between a pair of opposed electrode layers (not shown). Yes.
  • a predetermined electric pulse is applied to the resistance change thin film from the pair of counter electrodes, the resistance value between the pair of counter electrodes transitions between a low resistance state and a high resistance state.
  • this resistance change thin film maintains the state after the transition unless a predetermined electric pulse is applied.
  • one of the binary data “0” and “1” and the other is assigned to the low resistance state and the high resistance state, respectively, and the state of the resistance change thin film is set to the low resistance state.
  • a resistance change material for constituting the resistance change thin film a perovskite type transition metal oxide, a typical metal or an oxide of a transition metal, or the like can be used.
  • the resistance change material for forming the resistance change thin film Pr (1-x) Ca x MnO 3 (0 ⁇ x ⁇ 1), TiO 2 , NiO x (x> 0), Cu x O (x> 0) or the like, substitution products thereof, a mixture or a laminated structure thereof, or the like can be given.
  • the resistance change material is not limited to these resistance change materials.
  • the current suppressing element is configured by disposing a semiconductor layer between a pair of opposing conductor layers.
  • This configuration is the same as the MSM diode described above, exhibits nonlinear electrical resistance characteristics, and the current-voltage characteristics are substantially symmetric with respect to the polarity of the applied voltage. Even when it is applied, it is possible to prevent the occurrence of write disturb.
  • the current-voltage characteristic of the current suppression element depends greatly on the potential barrier formed between the conductor layer and the semiconductor layer adjacent to the conductor layer, and the potential barrier exhibits a rectifying property. In addition, by controlling the height of the potential barrier, the current suppressing element can pass a large current.
  • FIG. 2 is a cross-sectional view schematically showing the configuration of the current suppressing element according to the embodiment of the present invention.
  • the current suppressing element 2 is disposed between the first conductor layer 31, the second conductor layer 32, and the first and second conductor layers 31 and 32.
  • the semiconductor layer 33 is formed.
  • the first and second conductor layers 31 and 32 include tantalum nitride containing tantalum (Ta) and nitrogen (N), and the semiconductor layer 33 includes silicon (Si) and nitrogen (N). Contains silicon nitride.
  • an intermediate value of each crystal phase can be realized by mixing a plurality of TaN X phases having different X values. .
  • the material containing Si and N which is the semiconductor layer 33 indicates so-called silicon nitride.
  • Silicon nitride forms a tetrahedral amorphous semiconductor that forms a four-coordinate bond, and the tetrahedral amorphous semiconductor basically has a structure close to single crystal silicon or germanium, so elements other than Si must be introduced. It has the feature that the difference in structure due to is easily reflected in the physical properties. Therefore, if silicon nitride is applied to the semiconductor layer 33, it is easy to control the physical properties of the semiconductor layer 33 by controlling the structure of the silicon nitride, and accordingly, the first and second conductor layers 31 and 32 are thereby controlled. There is an advantage that the control of the potential barrier formed between the two becomes easier.
  • the tantalum nitride applied in the first and second conductor layers 31 and 32 is applied as a barrier layer for copper wiring
  • the silicon nitride applied in the semiconductor layer 33 is a semiconductor layer.
  • tantalum nitride and silicon nitride do not cause new impurity contamination due to the introduction of the semiconductor manufacturing line, and maintenance and maintenance of the semiconductor manufacturing line It is a preferable material.
  • the existing equipment can be easily transferred with respect to film formation or etching, and the processing conditions can be accommodated by using the existing film formation or etching conditions.
  • the inventors of the present application can control the composition of the tantalum nitride that is the first and second conductor layers 31 and 32 to allow a large current to flow through the resistance change element, that is, 1000 ⁇ A / It has been found that a current can flow at a current density of ⁇ m 2 or more (breakdown current is 1000 ⁇ A / ⁇ m 2 or more), and an on / off current ratio of at least 50 can be realized.
  • the first and second conductor layers 31 and 32 are composed of four types of metal Ta and tantalum nitride TaN 0.1 , Ta 2 N, Ta 3 N 5 having a film thickness of 50 nm.
  • the semiconductor layer 33 was made of silicon nitride SiN 0.3 having a thickness of 10 nm, and the current suppressing element 2 was produced.
  • the tantalum nitride film forming the first and second conductor layers 31 and 32 uses reactive sputtering, and an inert gas Ar used in sputtering and a reactive gas N 2 in nitride formation are simultaneously vacuumed.
  • the film was formed at room temperature while flowing through.
  • each tantalum nitride which is the conductor layers 31 and 32 of the present embodiment derived the composition and crystal structure in X-ray diffraction, and the film thickness and film surface shape were confirmed with a scanning electron microscope. .
  • the electrical resistivity of each tantalum nitride was derived from the value measured from the sheet resistance measuring machine.
  • the film formation of silicon nitride which is the semiconductor layer 33 of the present embodiment, uses reactive sputtering, and the inert gas Ar used for sputtering and the reactive gas N 2 for forming nitride are simultaneously supplied to the vacuum apparatus. Film formation was performed at room temperature. Further, the ratio of N to Si of silicon nitride, SiN 0.3 , which is the semiconductor layer of the present embodiment, was obtained by Rutherford backscattering spectroscopy. The film thickness of the silicon nitride layer was confirmed using ellipsometry spectroscopy. The surface shape of the silicon nitride film was confirmed with a scanning electron microscope.
  • a tantalum nitride film having a thickness of 50 nm as the first conductor layer 31 is formed on the substrate by reactive sputtering, and a silicon nitride film having a thickness of 10 nm as the semiconductor layer 33 is formed thereon by reactive sputtering.
  • the current suppression element 2 having an area of 0.46 ⁇ m ⁇ 0.46 ⁇ m was produced.
  • the first and second conductor layers 31 and 32 are made of Ta, TaN 0.1 , Ta 2 N, and Ta 3 N 5 tantalum nitride having a film thickness of 50 nm, and the semiconductor layer 33 is formed as a film.
  • the current-voltage characteristics of the four types of current suppressing elements 2 that were made of silicon nitride having a thickness of SiN 0.3 of 10 nm and whose conductor layer area was 0.46 ⁇ m ⁇ 0.46 ⁇ m were experimentally obtained. Is.
  • the current suppressing element 2 in which the first and second conductor layers 31 and 32 are made of tantalum nitride and the semiconductor layer 33 is made of silicon nitride has nonlinear electrical resistance characteristics. Further, it can be confirmed that a large amount of current flows in any voltage range as the ratio x of N to Ta of the tantalum nitride which is the first and second conductor layers 31 and 32 increases.
  • the current suppressing element 2 in which the ratio x of N to Ta is 0.5 and 1.67, and the so-called Ta 2 N and Ta 3 N 5 are the first and second conductor layers 31 and 32 is Ta
  • FIG. 4 shows that the first and second conductor layers 31 and 32 shown in FIG. 3 are made of tantalum nitrides of Ta, TaN 0.1 , Ta 2 N, and Ta 3 N 5 with a film thickness of 50 nm. From the current-voltage characteristics of the four types of current suppressing elements 2 in which the semiconductor layer 33 is made of silicon nitride of SiN 0.3 having a thickness of 10 nm and the area of the conductor layer is 0.46 ⁇ m ⁇ 0.46 ⁇ m. The relationship between the obtained ratio of N to Ta x and the breakdown current is shown.
  • the breakdown current increases as the ratio x of N to Ta of the tantalum nitride which is the first and second conductor layers 31 and 32 increases.
  • the breakdown current in each tantalum nitride of so-called Ta 2 N and Ta 3 N 5 in which the ratio of N to Ta is 0.5 and 1.67 is at least 1000 ⁇ A / ⁇ m 2 or more, and the resistance change It can be confirmed that a current can be passed through the element at a current density of 1000 ⁇ A / ⁇ m 2 or more.
  • FIG. 5 shows that the first and second conductor layers 31 and 32 shown in FIG. 3 are made of tantalum nitrides of Ta, TaN 0.1 , Ta 2 N, and Ta 3 N 5 with a thickness of 50 nm, From the current-voltage characteristics of the four types of current suppressing elements 2 in which the semiconductor layer 33 is made of silicon nitride of SiN 0.3 having a thickness of 10 nm and the area of the conductor layer is 0.46 ⁇ m ⁇ 0.46 ⁇ m. It is the graph which calculated
  • the breakdown current of the current suppressing element 2 is set to 1000 ⁇ A. / ⁇ m 2 or more, and an on / off current ratio of 50 or more can be secured.
  • the tantalum nitride of the first and second conductor layers 31 and 32 has a higher ratio of nitriding to Ta as the ratio of N to Ta increases.
  • the rate tends to be high and current tends to hardly flow.
  • the factor governing the flow of current is not the electrical resistivity of the conductor layers 31 and 32 (tantalum nitride) but the first and second conductor layers 31 constituting the MSM diode. , 32 and the semiconductor layer 33, it can be presumed that the height of the potential barrier is reduced, so that current easily flows at the interface.
  • the on / off ratio is improved because the off-region leakage current increases as the ratio x of N of Ta to tantalum nitride increases, but the increase in the on-region current exceeds the increase in the off-region current. It is thought that.
  • the current suppressing element 2 As described above, by configuring the current suppressing element 2, a non-linear electrical resistance characteristic is exhibited, the current-voltage characteristic is substantially symmetric with respect to the polarity of the applied voltage, and the resistance change element is large. It is possible to obtain the current suppressing element 2 capable of flowing a current. Therefore, even when electrical pulses having different polarities are applied, it is possible to prevent the occurrence of write disturbance and to allow a large current to flow through the resistance change element 1 and the storage device 21 including the storage element 3. It becomes possible to provide. From the foregoing description, many modifications and other embodiments of the present invention are obvious to one skilled in the art.
  • the memory element and the memory device according to the present invention can prevent the occurrence of write disturbance even when electric pulses having different polarities are applied, and even when a resistance change element is configured using a metal oxide material. Since data can be written without any problem, for example, it is suitable for use in a storage device including a current suppressing element that controls a current flowing through a resistance change storage element.

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Abstract

L'invention concerne: des éléments de stockage (3) disposés en matrice dans un dispositif de stockage (21) dont la valeur de stockage varie quand on applique une impulsion électrique de polarité négative ou positive et qu'on maintient la résistance électrique modifiée; et un élément suppresseur de courant (2) supprimant le courant qui s'écoule lors de l'application de l'impulsion électrique à l'élément à résistance variable. L'élément suppresseur de courant comprend: une première couche conductrice contenant du tantale et un nitrure de tantale azoté, une couche de semi-conducteur contenant du silicium et un nitrure de silicium azoté, disposée sur la première couche conductrice, et une deuxième couche conductrice contenant du tantale et un nitrure de tantale azoté et disposée sur la couche de semi-conducteur.
PCT/JP2009/004681 2008-09-19 2009-09-17 Élément et dispositif de stockage Ceased WO2010032468A1 (fr)

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JP2008-240471 2008-09-19
JP2008240471A JP2011249351A (ja) 2008-09-19 2008-09-19 記憶素子及び記憶装置

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Citations (5)

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