WO2010020202A2 - Apparatus with a semiconductor component-array and a cooling element - Google Patents

Abstract

The invention relates to an apparatus with a semiconductor component-array (2) which is arranged on an accommodation surface (2a) of a cooling element (1), and extends at least across a portion of the width of the cooling element (1).  The cooling element (1) comprises at least one coolant control structure.  The coolant control structure comprises at least a first recess (4) for the inlet or outlet of the coolant which has a smaller width (b_AN1) than the semiconductor-component array (2).  Furthermore, the coolant control structure comprises a first number n of first channel sections (5) extending in a fan-shape and which are outlet-connected to the flow from the first recess (4).  The coolant control structure comprises at least a second recess (6) for the outlet or inlet of the coolant which has a smaller width than the semiconductor component array (2).  Finally, the coolant control structure comprises a second number of second channel sections (9) extending fan-like and which are inlet-connected to the flow from the second recess.  The first and second channel sections (5, 9) intersect in different planes and are einarider outlet-connected to the flow.  The first and second channel sections (5, 9) run underneath the semiconductor element array (2).

Description

 Device with a semiconductor device arrangement and a cooling element

This patent application claims the priority of German Patent Application 10 2008 026 857.7, the Dungenbarungsgehalt hereby incorporated by reference.

description

The invention relates to a device with a semiconductor device arrangement, which is arranged .auf a receiving surface of a cooling element. In particular, the semiconductor device arrangement comprises a laser diode or a laser diode bar or stack thereof. The cooling element typically comprises channels, which are arranged in superimposed planes and flowed through by a cooling liquid.

The use of e.g. High-power laser diodes are always associated with the requirement for cooling, which can be realized in a particularly efficient manner by fluid-dynamic microchannel cooling with water as the cooling fluid. Thus, considerable heat input surfaces are achieved with so-called microchannel heat sinks, in which the microchannels are incorporated with different methods into a material of good thermal conductivity.

Generally, the cooling element for cooling the electronic component on the one hand should be as small and compact as possible, but on the other hand allow efficient cooling. Such efficient cooling requires high heat exchange performance, which in turn can only be achieved with coolant throughput. In the structural design of the cooling element, i. In the arrangement and geometric shaping of the channels extending in the interior of the cooling element for supplying and discharging the coolant to the microchannels or from the microchannels, it is therefore desirable to minimize the pressure drop within the cooling element for a given coolant throughput required for cooling the electronic component is low.

In stackable cooling elements or microchannel heat sinks the task of extending a narrow supply and return to the width of the electronic component in order to cool this mög ^¬ lichst homogeneously through channels exist. Both the intake and the return are usually carried out as widening over the width of the electronic component chambers. In this case, the flow in the inlet between the inlet and the microchannel structure spatially laterally spread and in the return between the microchannel structure and the outlet spatially laterally narrowed. These chambers, which are referred to as flow spreading and constriction chambers, have disadvantages for the cooling element, because they are very large compared with the usual structures of the cooling element. This suffers, on the one hand, the stability of the cooling element, in particular its resistance to pressure, bending and bending torsional forces. In addition, the chambers, which are arranged in the vicinity of the electronic component, hardly contribute to a heat input.

The plurality of known microchannel heat sinks contain different functional planes in a sequence of merged structured layers, the electronic device to be cooled being applied to an upper cover layer, e.g. by soldering, is applied. In the layer structure, the functions of Zuq uqd the discharge of Kühlfiüssigkeit and the actual cooling via the microchannels are housed.

From DE 43 15 580 A1 a five-layer microchannel heat sink is known. In a microchannel or distributor plate, the coolant supplied via an inflow is distributed to the microchannels which are located below the diode-diode mounted on the cover layer. Via connecting channels in an intermediate layer, the cooling liquid is led into a collection plate, from where there is a connection to a drain. A baseplate closes the microchannel heat sink down. This modular structure is in principle suitable for vertical stacking.

Based on DE 43 15 580 A1, a device for cooling electronic elements is described in DE 197 10 716 A1, in which the pressure loss which the cooling fluid undergoes when passing through the microchannel heat sink can be reduced. For this purpose, an intermediate plate is modified by a layering in such a way that a successive flow cross-section adaptation is achieved via a staircase structure. The disadvantage of this is that the stratification increases the height.

DE 100 47 780 A1 provides a device for cooling diode lasers, in which the heat transfer coefficient is increased at low height of the device such that the pressure losses occurring also ensure a flow-parallel operation of stacked heat sinks in an effective manner. In this device, the channels in each level are divided into fluidically serially connected groups in sequence, which open for the subsequent connection in common for the superimposed planes fluidic connection links, are available from the Groups of channels a first group with a common inflow and another, last downstream group with a common outlet for the cooling liquid in combination.

DE 10 2006 023 177 A1 discloses a planar heat dissipation device for dissipating heat from an electronic component such as a CPU. The heat dissipation device has a planar housing defining a planar interior therein. It further comprises a dividing unit that divides the interior into a plurality of upper fluid channels and a plurality ^'of lower dkanälen flui which cross the upper fluid channels. Each of the upper fluid channels is in fluid communication with at least one of the lower fluid channels at a point of intersection therebetween. Here are the upper and. lower fluid channels in a flow connection.

From EP 1 253 685 A1 a cooling element is also known in which an inlet is connected via a channel structure with cooling channels for cooling an electronic component. The component to be cooled is applied to the mutually parallel cooling channels.

It is an object of the present invention, an apparatus having a _specifying cooling member for a semiconductor device arrangement in which the heat input improved in the cooling element and the thermal resistance of the cooling element is reduced.

These objects are achieved by a device having the features of claim 1. Advantageous embodiments result from the dependent claims.

A device with a semiconductor component arrangement is proposed, which is arranged on a receiving surface of a cooling element and extends over at least part of the width of the cooling element. The cooling element has a coolant structure with the following. Characteristics on: at least a first recess for the inlet or outlet of the coolant, which has a smaller width than the semiconductor device arrangement; a first number n of fan-shaped first channel sections, which are the first

Recess are downstream of flow; at least one second recess for the outlet or inlet of the coolant, the lower one

Having width as the semiconductor device arrangement; a second number m in itself fan-shaped extending second channel sections, which are upstream of the second recess fluidically. Here, the first and second channel sections are downstream of each other in terms of flow and cross each other in different levels. Furthermore, the first and second channel sections extend at least partially below the semiconductor device arrangement.

In this case, "below the semiconductor component arrangement" means a region of the smallest area surrounding the semiconductor component arrangement which extends perpendicular to the pickup area This means that the previously used flow-spreading chamber and the flow-constriction chamber are subdivided into individual channels which cross over in different planes On the one hand, this provides an improved stability of the cooling element and, on the other hand, the heat flow paths created by the channels in the flow spreading and constriction structures can be increased to one size rte heat transfer surface access. As a result, the thermal resistance of the cooling element is reduced as a result. Another advantage that allows uniform heat dissipation is that the distance for the coolant from the inlet to the drain, regardless of through which the channel sections of the fan structure flows this, is almost the same length. The naturally uniform distribution of the flow resistance of flow-parallel to each other through flowed first and second channel sections thus allows for identical channel cross-sections a same flow velocity in all channel sections, which advantageously results in a homogeneous cooling of the receiving surface.

It is further provided that the first and the second recess are at least partially juxtaposed in one direction along the width of the semiconductor device arrangement. This feature also contributes to optimizing the outer dimensions of the cooling element.

The cooling element according to the invention is preferably distinguished ^'further characterized in that the first and second channel portions at least nx (m - l) / 2 and at most n χ (m + l) / 2 points of intersection crossing, the following three combination cases are permissible : a) n straight, m straight; b) n odd, m odd; c) n even, m odd. It is particularly expedient if the first number n corresponds to the second number m. In a further embodiment, the number of crossing points, the at least one of the first channel sections with the second channel sections is not smaller than (m-1) and / or the number of crossing points having at least one of the second channel sections with the first channel sections is not smaller than (n-1).

According to a further expedient embodiment, an inventive cooling element between an upper and lower cover layer on at least three levels for guiding the coolant. The three levels for guiding the coolant may for example be located in three layers of the cooling element.

A further advantageous embodiment of the device has a coolant structure with the following additional features: a third number of third channel sections aligned essentially parallel to one another, which are distributed below the semiconductor component arrangement, and of which at least some are fluidically connected in series with the first number n are fan-shaped extending, first channel sections are interconnected; and a fourth number of substantially parallel aligned fourth channel sections distributed below the semiconductor device array, and at least some of the fourth channel sections are fluidly connected in series with the second number m of fan-shaped second channel sections. ^'

The thermal resistance is reduced efficiently in particular if the number of the first or second channel sections is at least one third, preferably at least half the number of the third or fourth channel sections, and ideally corresponds to their number. Advantageously, the cooling element according to the invention can be combined with other microchannel structures, in particular those of cascade cooling elements, as described for example in DE 100 47 780 A1. A "cascading" is to be understood as meaning the fluidic series connection of adjacent and / or mutually parallel channel sections.

The term "substantially parallel running" is in the context ^'of this description to be understood that the longitudinal axes of the respective channel sections adjacent and lie in a direction perpendicular to their longitudinal axes parallel to one another, so that angular deviations from parallelism of up to 15 °, in particular 10 °, preferably 5 ° are allowed. In an expedient embodiment, the first channel sections are oriented at least partially obliquely to the third channel sections and / or the fourth channel sections are oriented at least partially obliquely to the second channel sections. This feature allows to design the shape of the "fan" as desired by the hard ^¬ interpretation of respective lengths of the channel sections. In particular, the embodiment can be carried out with respect to pressure and flow technical constraints or with respect to an optimization of the thermal resistance.

It is further provided that the third channel sections form a microchannel structure which is connected via the first channel sections to the first recess and / or the fourth channel sections form a microchannel structure which is connected to the second recess via the second channel sections. A cooling element designed in this way has a known microchannel structure in the region of the receiving surface, which are connected to the inlet and outlet via the first or second channel sections extending in a fan-shaped manner. This configuration makes it possible to considerably increase the receiving area compared to the cooling elements known from the prior art, so that the length of the laser diode bar can be considerably increased in the case of an electronic component designed as a laser diode bar. The magnification of the actively acting receiving area becomes achieved solely by the internal channel structure training, without having to change the external dimensions of the cooling element. In this way can be used optimized laser diode bar in ^terms' efficiency.

In particular, the third and the first channel portions in a common first plane are arranged and / or the fourth and the second channel sections in a common second plane being arranged ^¬. In this way, the cooling element can be formed by a total of three functional layers plus a lower and upper cover layer. As a result, the cooling element according to the invention can be formed with a small thickness.

According to a further embodiment, the longitudinal axes of the third and fourth channel sections are aligned substantially perpendicular to the width direction of the cooling element and thus of the semiconductor device arrangement. This favors efficient cooling of the laser diode bar.

In a cooling element according to the invention, the semiconductor device arrangement in a direction of extension perpendicular to the width direction of the cooling element (and thus the semiconductor device arrangement) has a total length which corresponds to up to 3 times the length of the third or fourth channel sections. Compared to a conventional cooling element of the prior art As a result, the area available for the semiconductor component arrangement can be made three times as large. In this case, the cooling element according to the invention allows compact dimensions of the device due to the efficient cooling,

In a further refinement, in each case one of the first channel sections is connected to one or two adjacent third channel sections and / or one of the second channel sections is connected to one or two adjacent fourth channel sections.

In a further concrete embodiment it can be provided that the first channel sections each have a width that is greater than or equal to the width of one of the third channel sections and smaller than twice the width of one of the third channel sections and / or the second channel sections each have a width, which is greater than or equal to the width of one of the fourth channel sections and less than twice the width of one of the fourth channel sections. In a further alternative or additional embodiment, the distance between two adjacent first and / or second channel sections corresponds to

1 to 2 times, preferably 42 times the distance between two adjacent third and / or fourth channel sections.

According to a further embodiment, the first and / or second channel sections have feed or drain sections running parallel to the third and / or fourth channel sections. In this case, the supply or discharge sections of the first and / or second channel sections are approximately the same length.

In accordance with a further embodiment, the number of the third and the number of first channel sections are arranged symmetrically with respect to an axis of symmetry of the cooling element and / or the number of the fourth and the number of second channel sections are arranged symmetrically with respect to an axis of symmetry of the cooling element. This results in particularly advantageous pressure loss or flow conditions, simultaneously a large receiving surface for the cooling to ^"electronic device is provided.

The semiconductor device arrangement has at least one laser diode bar or at least one row of a plurality of juxtaposed laser diodes or consists of a laser diode bar or at least one row of a plurality of juxtaposed laser diodes.

The invention will be described in more detail below with reference to exemplary embodiments in the figures. Show it: 1a to 1d a first embodiment of a coolant guide structure of a cooling element according to the invention,

2a to 2d, a second embodiment of a coolant guide structure of a cooling element according to the invention,

3a to 3d a third embodiment of a coolant guide structure of a cooling element according to the invention,

4a to 4d, a fourth embodiment of a coolant guide structure of a cooling element according to the invention,

5a to 5d, a fifth embodiment of a coolant guide structure of a cooling element according to the invention,

5e shows a first modification of the channel center guide structure of the fifth embodiment,

5f shows a second modification of the channel center guide structure of the fifth embodiment,

6a to 6d, a sixth embodiment of a coolant guide structure of a cooling element according to the invention,

6e shows a cross section through a stackable cooling element with a laser diode bar on a coolant guide structure of the sixth embodiment,

Fig. 6f the cooling element of Fig. 6e in a plan view.

1 a, 2 a, 3 a, 4 a) as well as three parallel planes (see FIGS. 1 b, 1 c, 1 d, 2 b, 2 c, 2 d, 3 c, 3 c, 3d, 4b, 4c, 4d) which, when arranged one above the other, give the overall view. The illustrated coolant guide structures are incomplete in that their connection to inlets and outlets in the cooling element is not shown. In the first embodiment shown in FIG. 1, comprising FIGS. 1a to 1d, is a _. Channel centering structure KM of a cooling element 1, which is referred to as "U-channel guide laterally long, type 1." Fig. 1a shows a plan view of the coolant guide structure KM, which are arranged one above the other in Figs. 1b, 1c and 1d Each of the planes shown in Figures 1b and 1d may, for example, be located in a layer S1, S2 and S3, which may be arranged between an upper and a lower cover layer to form the coolant guide structure arranged one above the other However coolant guide structure described in the embodiments need not necessarily ^'of superposed layers to be formed. Instead, the coolant guiding structure can be manufactured by molding or in the aggregate for example. When reference is made in the following description, layers, so this is not to be limiting understand.

The coolant guide structure KM is formed on a good heat conductive material of the cooling element 1. The edge boundaries of the cooling element 1 are not shown in the present figures, since they are of minor importance to the invention. However, in a known manner, the cooling element 1 has a receiving surface 2 a, the dimensions of which are marked DA and U in FIG. 1 a. In this case, bA denotes the width of the receiving surface 2a, IA the length of the receiving surface. The receiving surface 2 a serves to receive a semiconductor component arrangement 2 of corresponding size, wherein a reliable, essentially homogeneous cooling of the semiconductor component arrangement 2 is ensured in the region of the receiving surface 2 a owing to the channel structure of the cooling element 1. The receiving surface 2a thus corresponds in the following description to the region below the semiconductor device arrangement or the outline of the projection of the semiconductor device arrangement 2. The semiconductor device arrangement 2, which is not shown in the figures, is in particular a laser diode or a laser diode bar or extending in the width direction row / row thereof, the cooling element according to the invention or the coolant guide structure formed therein is in principle, however, also for cooling other and / or more electronic components.

The coolant guide structure of the first exemplary embodiment in FIG. 1 has a first number of substantially parallel third channel sections 3, which in the exemplary embodiment are uniformly distributed over the width of the receiving surface b _{A of} the cooling element. This means that the longitudinal axes of two adjacent channel sections each have the same distance from each other. The third channel sections 3 form a microchannel structure of known type. In the version For example, a total of 16 parallel juxtaposed third channel sections 3 are shown. In principle, a different number of third channel sections 3 can be provided.

The third channel sections 3 are arranged in a first layer S1 (see Fig. 1b). Two adjacent each of the third channel sections 3 are connected to one another via a connecting section 13 extending along the width bA of the receiving surface 2a. This results in approximately a U-shaped channel guide. Each second of the third channel sections 3 (ie each "U") is connected via a second number of fan-shaped first channel sections 5 to a first recess 4, eg an inlet, which is symmetrical with respect to an axis of symmetry 10 and approximately horseshoe-shaped Channel sections 5 are in this case oriented obliquely in sections to the third channel sections 3, these opening into feed sections 7 running parallel to the third channel sections, which connect the first channel sections 5 to the first recess and the feed sections 7 of the first channel sections 5 are such that there is symmetry with respect to the axis of symmetry 10. Symmetrically with the axis of symmetry 10, a second recess 6, eg a drain, is formed in the first layer S1, which is connected to channel-shaped drain sections 11 is which extending in the direction of the third channel sections 3 and the Zuführabschnitte 7 of the first channel sections 5.

FIG. 1d shows the profile of the channel centerline structure in the fourth layer S3. This has substantially parallel aligned fourth channel sections 8, wherein each two adjacent channel sections are connected via a connecting portion 14. This also results in a U-shaped channel guide. If the first and fourth layers S1 and S3 are arranged one above the other, then the third channel sections 3, the fourth channel sections 8 and the connecting sections 13 and 14 come to lie one above the other. Each second of the fourth channel sections 8 is fluidically interconnected with the second recess 6 via a second number of second channel sections 9 extending in a fan-shaped manner. The second channel sections 9 have, corresponding to the first channel sections 5, outlet sections 11 which are located substantially in respective axes of the fourth channel sections 8. The run-off sections 11 thus run essentially parallel to one another. The discharge sections 11 lead into the second recess 6. The feed sections of the first channel sections 5, the outlet sections 11 of the second channel sections 9 and the first and second recesses 4, 6 extend over all layers S1, S2 and S3. By connecting portions 12, the number of the number of third channel sections 3 and the fourth channel sections 8 corresponds, and which are arranged in the second layer S2 in the region or at the height of the connecting portions 13 and 14, there is a fluidic downstream of the first and second channel sections, which, as is apparent from Fig. 1a, cross in different planes. The flow-related course in the exemplary embodiment illustrated in FIG. 1 results in the following sequence: first recess 4-first channel sections 5-third channel sections 3-fourth channel sections 8-second channel sections 9-second recess 6.

The length of the Zuführabschnitte 7 of the first channel sections 5 is identical in the voriiegenden embodiment. The respective left and right of the axis of symmetry 10 arranged Zuführabschnitte 7 are arranged offset from each other in the longitudinal direction, so that the inclined portions of the first channel sections 5 parallel to each other. In the dimensioning shown in the drawing, the oblique sections of the first channel sections 5 extend approximately at a 45 ° angle to the third channel sections 3 and to the feed sections 7. The same applies to the second channel sections 9 formed in the fourth layer S3 , which are connected via the flow sections 11 with the second recess 6.

It is readily apparent that this embodiment chosen in the first embodiment is not mandatory. Rather, each of the left and right of the axis of symmetry 10 extending oblique portions of the first Kanaiabschnitte 5 could run at a different angle relative to the third channel sections 3 and feed sections 7, which could be effected in particular by a different length of the feed sections 7. In another variant, the ends of the feed sections 7 opening into the first recess 4 could lie in a line which is e.g. perpendicular to the longitudinal axes of the third channel sections 3 extends. The same again applies to the second channel sections 9 and the outlet sections 11 of the second channel sections. In a further alternative embodiment, the feed sections 7 of the first channel sections 5 and the drain sections 11 of the second channel sections 9 can also be dispensed with and replaced by the first or second cutouts 4, 6.

The distance between two adjacent first and / or second channel sections 5, 9 corresponds to 1, 2 times, preferably 4Ϊ times the distance between two adjacent third and / or fourth channel sections 4, 8. The distance between two adjacent channel sections becomes here the distance between their respective centrally located longitudinal axes of the channel sections understood. As can be seen from the overall view according to FIG. 1a, the coolant, for example, fed into the first recess 4, is spread across the fan-shaped first channel sections 5 from a width bANi of the first recess 4 over the entire width bA of the receiving surface 2a, ie below the semiconductor device arrangement 2 or its outline of the projection, spread. The width b _AN i is expediently less than 60% of the width bA of the receiving surface 2a. In a corresponding manner, the coolant flowing from the third channel sections 3 into the fourth channel sections 8 is narrowed via the fan-shaped second channel sections 9 and the second recess 6, the 'process, fed. The two recesses 6 provided due to the symmetrical arrangement together assume a width which results from the difference between bA and ÖANI.

It is readily apparent that not only the third channel sections 3 and the fourth channel sections 8 contribute to the heat dissipation, but also the first channel sections 5 and the second channel sections 9, which cross each other in the first and third planes. As a result of this, the length of the area below the semiconductor component arrangement 2 can be extended beyond the third or fourth channel sections 3, 8 so that it encloses at least part of the first and second channel sections 5, 9. In addition to improved stability of the heat sink, access can be made to the heat flow paths formed by the first and second channel sections, so that an enlarged heat transfer surface is available for the electronic component. An advantage of this variant is that the distance for the coolant from the inlet 4 to the drain 6, regardless of the channel sections of the fan structure flows through this, is almost the same length. This results in all the channel sections 7, 5, 3, 8, 9 and 11 similar, ideally identical, flows that allow in channel sections of the same channel cross sections in principle identical flow velocities with identical heat dissipation of the cooling medium. ,

Contrary to the representation in FIG. 1, a cooling element according to the invention could also be formed only by the part shown on the left or the right of the axis of symmetry 10. However, the mirror-symmetrical embodiment in the exemplary embodiment has practical advantages, which have already been explained above.

The exemplary embodiment illustrated in FIG. 1 has a partial coolant-carrying structure formed on the left or right of the axis of symmetry 10. a number of ten crossing points. This is calculated according to the formula nχ (m + l) / 2, where n is the number of parallel first channel separations. sections 5 and m is the number of parallel second channel sections 9. Both n and m are 4 in this embodiment.

The second exemplary embodiment shown in Figure 2, comprising Figures 2a to 2d, is of the type "U channel guide laterally long, type 2." The coolant guide structure differs from the variant shown in the first embodiment shown in FIG Instead of this, the third channel section 3, the first channel section 5 and the feed section 7 lie in one axis The axis of symmetry 10 at the furthest away from the third channel sections 3 directly, ie in the layer S1 and on a line with one of the drainage sections 11, opens into the same The same applies to the lying in the fourth layer S3 coolant flow guide structure in the second layer S2 for those third channel sections 3 and fourth Ka, respectively Nalabschnitte 8, which are located immediately adjacent to the axis of symmetry 10 and which are located farthest from the axis of symmetry 10, no connection sections 12 are required. Incidentally, the shape of Kühlmittelfύhmng in the second corresponds. Layer S2 (see Fig. 2c) of the embodiment of the first embodiment. The flow-related course in the exemplary embodiment illustrated in FIG. 2 results in the following order: first recess 4-first channel sections 5-third channel sections 3-fourth channel sections 8-second channel sections 9-second recess 6.

The number of crossing points in a coolant-guiding structure arranged on the left or right of the axis of symmetry 10 is determined by the formula nχ (m-1) / 2, so that a total of six crossing points result in the embodiment of FIG. 2, n in turn represents the number of parallel runs first channel sections 5 and m, the number of parallel second channel sections 9, where n = m = 4.

The fourth embodiment in Fig. 3 is of the "U-channel vertical length" type, as best seen in Fig. 3b, two adjacent third channel sections 3 are connected to one channel of the first channel sections 5, respectively Channel sections 3 opposite ends of the inclined portions of the first channel sections 5 open fan-shaped approximately equal length Zuführabschnitte 7 of the first Kanalabschrjitte, which extend in the direction of the third channel sections 3 and turn into the first due to the symmetrical configuration horseshoe-shaped recess 4. In a corresponding manner the fourth channel sections 8 in the fourth layer S3 are connected to the second recess 6 via the second channel sections 9. Here, too, two fourth channel sections 8 arranged adjacent to one another are fluidically connected in parallel by corresponding channels of the second channel sections 9. The exemplary embodiment of the same length trained drain sections 11 of the second channel sections 9 connect the second recess 6 with the ends of the inclined sections of the second channel sections 9, which are the fourth channel sections 8 facing away. A flow-related sequential connection of the third channel sections 3 and the fourth channel sections 8 results from the connection sections 12 in the second layer S2. The flow-related course of the embodiment shown in Fig. 3 results in the order: first recess 4 - first channel sections 5 - third, channel sections 3 - fourth channel sections 8 - second channel sections 9 - second recess 6. As in the previous embodiments penetrate the first recess 4, the second recess 6 and the feed sections 7 and the drain sections 11 all of the three layers S1. S2 and S3,

The number of nodes in a left or right of the axis of symmetry 10 arranged coolant flow structure is determined according to the formula n χ (m - l) / 2, so that in the embodiment of FIG. 2 result in a total of six intersection points, n in turn, the number of parallel extending first channel sections 5 and m, the number of parallel second channel sections 9, where n = m = 4.

The second embodiment shown in Fig. 4 corresponds to a "U-channel guide laterally short." In contrast to the previous embodiment, the parallel third channel sections 3 are substantially shorter and moreover, a smaller number of parallel third channel sections 3 are provided are connected via the first Kanaiabschnitte 5, which relative to the third channel sections 3 obliquely extending portions and parallel to the third channel sections 3 extending feed sections 7 with the first recess 4. As in the previous embodiment of FIG. 2 which is the symmetry axis 10 immediately adjacent third channel section 3 directly connected in straight connection with the first recess 4, in a corresponding manner, this applies to those third channel sections 3, which are arranged farthest from the axis of symmetry 10. In a corresponding, "inverse" manner the fourth channel sections 8 are connected to the second recess 6 via the second channel sections 9, which have sections and drain sections 11 running obliquely with the fourth channel sections 8. Also analogous to the second embodiment in Fig. 2 are those fourth channel sections 8, which are immediately adjacent to the axis of symmetry 10 and farthest to this formed, directly, ie in straight connection, connected to the second recess 6. The fluidic The series connection of the channels extending in the first and third layers S1 and S3, and in particular of the crossing first and second channel sections, results via the connecting sections 12 provided in the second layer S2. For those third and fourth channel sections 3, 8 adjacent thereto are arranged at the farthest axis 10 and farthest to this, no connecting portions 12 are required according to the second embodiment. Corresponding to the exemplary embodiments already described above, the first and second recesses 4, 6 and the feed sections 7 and the discharge sections 8 penetrate the first to third layers S1. S2 and S3.

The flow-related course of the embodiment shown in Fig. 4 results in the order: first recess 4 - first channel sections 5 - third channel sections 3 - fourth channel sections 8 - second channel sections 9 - second recess 6. In a (not shown) embodiment of the fluidic Course also take place in the following order: first recess - third channel sections - second channel sections - fourth channel sections - second channel sections - second recess. In this variant, the channel sections 7 can be regarded as third channel sections and the channel sections 11 as first channel sections.

The number of crossing points in a coolant-guiding structure arranged on the left or right of the axis of symmetry 10 is determined according to the formula n χ (m-ϊ) / 2, so that a total of six crossing points result in the exemplary embodiment of FIG. ^In turn, n represents the number of parallel first channel sections 5 and m the number of parallel second channel sections 9. Again, n = m = 4. ■.

4, the third and fourth channel sections 3, 8 could also be dispensed with, so that the ends of the oblique sections of the first and second channel sections 5, 9 remote from the first and second recesses 4, 6, respectively are directly connected to the respective connecting portions 13, and 14, respectively. As can readily be seen from FIG. 4b and FIG. 4d, the connecting sections 13 and 14 lie on a common axis in different planes of the layers S1 and S3. The fluidic profile results in the following order: first recess - third channel sections - first channel sections - fourth channel sections - second channel sections - second recess. In this variant, the channel sections 7 can be regarded as third channel sections and the channel sections 11 as first channel sections. The fifth exemplary embodiment shown in FIGS. 5 a to 5 d represents a more general variant of the fourth exemplary embodiment according to FIG. 4. The coolant guide structure KM has fan-shaped first and second channel sections 5, 9, with the first channel sections 5 downstream of the first recess 4 and the second channel portion 9 of the second recess 6 are upstream of flow. The first and second channel sections 5, 9 are fluidly connected downstream via connecting sections 12 in the second, middle layer S2. Due to the waiver of the third and fourth channel sections, as compared to the exemplary embodiment according to FIG. 4, and the channel sections which connect the fan structures to the inlet and outlet, the microchannel structure is formed essentially exclusively by the first and second channel sections 5, 9 , Below the receiving surface 2a or the Halbleiterbauelement- arrangement thus extend only channel sections of the fan structures. An advantage of this variant is that the distance for the coolant from the inlet 4 to the outlet 6, regardless of which of the Kanaiabschnitte the fan structure flows this is almost the same length. This results in the same flow velocities in all channel sections.

FIGS. 5e and 5f respectively illustrate alternative embodiments of FIG. 5a in which the outflow-side coolant-guiding structures in the third layer S3 are shifted toward the inlet-side coolant-carrying structure (FIG. 5e) or away from it (FIG. 5f) The ends of the first and second fan-shaped extending channel sections 5, 9 are no longer one above the other, but slightly offset from each other, The connection of the ends of the first and second channel section 5, 9 is carried out by in the width direction of the semiconductor device arrangement, ie lateral, extending channels in the second, middle layer S2. In these embodiment variants, the different possible numbers of crossing points, which are characterized by the black-filled points, become clear: for every five channel sections (n = 5, m = 5), in the case of FIG. 5e a total of 5 × 6/2 results = 15 crossing points, in the case of Fig. 5f a total of 5 x 4/2 = 10 crossing points.

The fifth exemplary embodiment of the coolant guide structure KM in FIGS. 6a to 6d represents a variant which, in comparison to the embodiment of FIGS. 5a to 5d, additionally comprises third channel sections 3 and fourth channel sections 8 which are arranged between the inlet 4 and the outlet 6 and the first channel sections 5 and the second channel sections 9 are arranged. The first and second channel sections 5, 9 are, as in the exemplary embodiment according to FIGS. 5 a to 5 d, downstream of each other (directly) in terms of flow. Compared with the fourth exemplary embodiment according to FIGS. 5 a to 5 d, the receiving surface 2 a or the region below the semiconductor component arrangement 2 can thereby be made larger. The embodiment of FIGS. 6a to 6d thus enables the cooling a comparatively larger semiconductor device arrangement 2. This ^~ variant also has the advantage that the distance for the coolant from the inlet 4 to the outlet 6, regardless of the channel sections of the fan structure flows through this, is almost the same length. This results in a uniform distribution channel-individual flows with relatively homogeneous cooling effect on the receiving surface 2a.

6e shows a cross-sectional view of a stackable cooling element 1 with a laser diode bar 2 mounted on the receiving surface 2a as a semiconductor component arrangement, wherein the cooling medium guide structure KM of the cooling element 1 according to FIG. 6a is formed.

FIG. 6f shows the stackable cooling element 1 provided with the laser diode bar 2 in a top view, wherein the topmost layer (S1) of the internal cooling medium guide structure KM is indicated by dots. An inlet 15 designed as a breakthrough is connected to the inlet 4, and an outlet designed as a breakthrough is on. the sequence 6 connected.

All embodiments have in common that a compared to conventional cooling elements much larger semiconductor device assembly 2 can be added and cooled. In particular, the length of the receiving surface U can be up to 3 times the usual length. The usual length used here is the length IKAI of the third channel sections 3, as shown for example in FIGS. 1, 2 and 3. This is made possible by the provision of first and second channel sections, which run fan-shaped and cross each other in different planes. The first and second channel sections, whose respective channels can be flowed through in parallel by coolant, are in this case downstream of each other in terms of flow.

LIST OF REFERENCE NUMBERS

1 cooling element

2 semiconductor device arrangement

2a receiving surface

3 third channel sections

4 first recess (e.g., inlet)

5 first channel sections

6 second recess (e.g., drain)

7 supply sections of the second channel sections

8 fourth channel sections

9 second channel sections

10 symmetry axis

11 drain sections fourth channel sections

12 connecting section

13 connecting section

14 connecting section

15 inlet

16 outlet

20 semiconductor device arrangement bk width of the cooling element b _A width of the receiving surface

IA length of the receiving surface

IKA1 length, the first channel sections bAN1 width of the first recess

S1 first layer

S2 second layer

S3 third shift

Claims

claims 1. Device having a semiconductor component arrangement (2) which is arranged on a receiving surface (2a) of the cooling element (1) and extends over at least part of the width of the cooling element (1), wherein the cooling element (1) at least one coolant guide structure comprising: at least a first recess (4) for the inlet or outlet of the coolant, which has a smaller width (bANi) than the semiconductor device arrangement (2); a first number n of fan-shaped, first channel sections (5), which are connected downstream of the first recess (4) in terms of flow; at least one second recess (6) for the outlet or inlet of the coolant, which has a smaller width than the semiconductor component arrangement (2); a second number m in itself fan-shaped extending second channel sections (9), which are upstream of the second recess (6) fluidically; wherein the first and second channel sections (5, 9) are downstream of one another in terms of flow, intersect in different planes and run at least partially beneath the semiconductor component arrangement (2). 2. Device according to claim 1, wherein the first and the second recess (4, 6) in a direction along the width of the semiconductor device arrangement (2) at least partially arranged side by side. Apparatus according to any one of the preceding claims, wherein the first and second channel sections (5, 9) intersect at least n - {m - \) ll and at most n - {m + \) l2 crossing points, the following three Combination cases are permissible: a) n straight, m straight; b) n odd, m odd; c) n even, m odd. 4. Device according to one of the preceding claims, in which the first number n corresponds to the second number m. 5. Device according to one of the preceding claims, wherein the number of crossing points, which has at least one of the first channel sections (5) with the second channel sections (8) is not less than (m -i) and / or the number of Cross points having at least one of the second channel sections (8) with the first channel sections (5) is not smaller than (w - l). 6. Device according to one of the preceding claims, wherein the cooling element (1) between an upper and a lower cover layer has at least three levels for guiding the coolant. 7. Device according to one of the preceding claims, whose coolant structure has the following additional features: a third number of substantially parallel aligned third channel sections (3), which are distributed below the semiconductor device arrangement (2), and of which at least some fluidically serially are interconnected with the first number n of fan-shaped extending first channel sections (5); a fourth number of substantially parallel aligned fourth channel sections (8) distributed below the semiconductor device array (2), and at least some of the fourth channel sections (8) are serially extending in a fan shape in series with the second number m, second channel sections (9) are interconnected. 8. Apparatus according to claim 7, wherein the first channel sections (5) are at least partially oriented obliquely to the third channel sections (3) and / or the second channel sections (8) are oriented at least partially obliquely to the fourth channel sections (9). 9. Device according to claim 7 or 8, wherein the third channel sections (3) form a microchannel structure which is connected to the first recess (4) via the first channel sections (5); and / or the fourth channel sections (8) form a microchannel structure which is connected to the second recess (5) via the second channel sections (9). 10. Device according to one of claims 7 to 9, wherein the first and the third channel sections (5, 3) are arranged in a common first plane and / or the second and the fourth channel sections (9, 8) in a common second plane are arranged. 11. Device according to one of claims 7 to 10, are aligned in the longitudinal axes of the third and fourth channel portions (3, 8) substantially perpendicular to the width direction of the cooling element (1). 12. Device according to one of claims 7 to 11, wherein the semiconductor device arrangement (2) in an extension direction perpendicular to the width direction of the cooling element (1) has a total length which up to 3 times the length of the first or third channel sections ( 3, 8) corresponds. 13. Device according to one of claims 7 to 12, wherein in each case one of the first channel sections (5) with one or two adjacent of the third channel sections (3) is connected and / or one of the second channel sections (9) with one or two adjacent the fourth channel sections (8) is connected. 14. Device according to one of claims 7 to 13, wherein the first channel sections (5) each have a width which is greater than or equal to the width of one of the third channel sections (3) and smaller than twice the width of one of the third channel sections (3 ) and / or the second channel sections (9) each have a width which is greater than or equal to the width of one of the fourth channel sections (8) and less than twice the width of one of the fourth channel sections (8). 15. Device according to one of claims 7 to 14, wherein the distance between two adjacent first and / or second channel sections (5, 9) to 1 to 2 times, preferably 4ϊ times, the distance between two adjacent third and / or fourth channel sections (3, 8) corresponds. 16. Device according to one of claims 7 to 15, wherein the first and / or second channel sections (5, 9) relative to the third and / or fourth channel sections (3, 8) parallel feed or drain sections (7, 11) exhibit. 17. The apparatus of claim 16, wherein the supply or drain sections (7, 11) of the first and / or second channel sections (5, 9) are approximately equal in length. 18. Device according to one of the preceding claims, wherein the Halbleiterbauelement- arrangement comprises at least one laser diode bar or at least one row of a plurality of juxtaposed laser diodes or consists of a laser diode bar or at least one row of a plurality of juxtaposed laser diodes.