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WO2010015878A2 - Procédé de modification d’un substrat - Google Patents

Procédé de modification d’un substrat Download PDF

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Publication number
WO2010015878A2
WO2010015878A2 PCT/IB2008/003101 IB2008003101W WO2010015878A2 WO 2010015878 A2 WO2010015878 A2 WO 2010015878A2 IB 2008003101 W IB2008003101 W IB 2008003101W WO 2010015878 A2 WO2010015878 A2 WO 2010015878A2
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
layer
support substrate
bonding
electromagnetic radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2008/003101
Other languages
English (en)
Other versions
WO2010015878A3 (fr
Inventor
Bruce Faure
Fabrice Letertre
Jonathan J. Wierer, Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Lumileds LLC
Original Assignee
Soitec SA
Philips Lumileds Lighing Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP08290757A external-priority patent/EP2151856A1/fr
Priority claimed from EP08290759.3A external-priority patent/EP2151852B1/fr
Application filed by Soitec SA, Philips Lumileds Lighing Co LLC filed Critical Soitec SA
Priority to TW098125948A priority Critical patent/TW201029049A/zh
Publication of WO2010015878A2 publication Critical patent/WO2010015878A2/fr
Publication of WO2010015878A3 publication Critical patent/WO2010015878A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H10P90/1914—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/139—Manufacture or treatment of devices covered by this subclass using temporary substrates
    • H10P72/74—
    • H10W10/181—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H10P72/7416—
    • H10P72/7432—
    • H10P72/7434—
    • H10P72/744—

Definitions

  • Titie Process for modifying a substrate
  • the present invention relates to a process for modifying a substrate.
  • the present invention provides processes for joining and separating semiconductor layers and substrates, useful for example for forming three-dimensionally stacked "system-on-chip” devices, or for transferring optoelectronic & (photo)voltaic elements.
  • Materials of layers may for example be chosen among the IV group materials (Si, Ge%), the III/V group materials (GaN, InGaN, InGaAs..) and the materials can be polar, non polar or semi-polar according to the application.
  • the invention provides a method facilitating the removal of intermediate substrates that may be necessary for manufacturing certain semiconductor electronic devices.
  • the invention further provides a method for facilitating access to "front" and "back" faces of semiconductor layers, which is of general importance and, in certain embodiments the invention, may be applied to the manufacture of devices containing layers of IH-N materials.
  • electronic circuits may be introduced on one face of a thin layer on an initial support substrate favourable for this functionalization step, and then the exposed and functionalized "front" surface may be bonded to an intermediate substrate.
  • the removal of the initial substrate support enables other circuits to be prepared on the "back" face of the functionalized thin layer.
  • the exposed ⁇ back" face may be further transferred, for example to a support adapted to the operation of the functionalized centres created, for example for heat dissipation.
  • the group III-V materials such as InGaAs, InP or InAIAs are very useful for solar cell applications and Ill-nitride materials such as GaN, AIGaN or InGaN are of considerable interest in the semiconductor industry for use in light-emitting devices such as light-emitting diodes, laser diodes and related devices.
  • GaN is a promising material for optoelectronic applications as well as for high frequency, high power electronic devices. It is important to be able to provide GaN or InGaN layers showing a low amount of crystal defects and a high quality surface. It is of interest in these areas of technology to dispose of methods enabling IH-V and IH-N materials to be provided on a variety of surfaces and support materials.
  • III-V material is grown by epitaxy on a substrate surface
  • a high crystalline quality and appropriate lattice parameters of the growth substrate are necessary to enable sufficient quality IH-V growth, restricting the choice of underlying seed support substrates for the III-V material.
  • polar c-plane IH-N material it is also of interest to be able to expose particular faces of IH-N substrates.
  • polar c-plane IH-N material it is common for polar c-plane IH-N material to have a specific atom surface termination such that one surface is terminated by the element from group III and the other surface is terminated by nitrogen atoms.
  • the present invention proposes a process for modifying a substrate (10) comprising: (a) providing an initial substrate (10) having a face (10b) for bonding and an opposing face (lOr);
  • the present invention proposes a process for modifying a substrate (10) comprising:
  • a substrate comprising a. support substrate (25) substantially transparent to a wavelength of electromagnetic radiation; b. a layer (aa) bonded to the support substrate (25); and c. an electromagnetic radiation absorbing layer (24) in- between the support substrate and the layer (aa);
  • Figure 1 represents a schematic view of the general process of the invention.
  • Figure 2 represents a schematic view of an example process of the invention in which a part of initial substrate (10) is removed to form a new layer (aa).
  • Figures 3 and 4 represent schematic views of example processes of the invention in which, respectively, the layer (aa) is functionalized to produce a layer (aa)', and/or further layers are bonded to the layer (aa).
  • Figure 5 is a schematic view of an example process of the invention in which ion implantation is used as well as bonding to a final substrate.
  • FIG. 6 is a schematic view of a further example process of the invention in which ion implantation is used as well as bonding to a final substrate.
  • Figure 1 represents a schematic view of the general process of the invention. As shown in Figure 1, the invention combines both a bonding step
  • the bonding of layers may involve molecular, eutectic, hot, pressured or anodic bonding.
  • bonding may be achieved using one or more oxide bonding layers (not shown in Figure 1), that may be added to one or both of the faces of substrates being bonded.
  • An appropriate example of a material for an oxide bonding layer is silicon dioxide (SiCb). Silicon dioxide materials for bonding purposes may be provided in layers thermally or by chemical vapour chemical deposition techniques such as LPCVD or PECVD.
  • the composition of this layer is chosen in such a way as to absorb electromagnetic radiation emitted by a source such as a laser at a chosen wavelength and allow the separation of bonded entity under the effect of the energy absorbed.
  • a source such as a laser
  • the separation of the support substrate (25) of step e) is due to chemical and/or physical changes in the electromagnetic radiation absorbing layer (24).
  • separation of the bonded entity it is meant that the binding energy of each element forming the bonded entity is weaker after the application of the electromagnetic radiation than before.
  • the energy absorbed will give rise to different effects, for example atomic level vibration, sublimation, specific diffusion or formation of a gas, which in itself leads to separation, as defined above, or chemical reactions. Mechanisms involving purely thermal effects as well as photochemistry can thus be behind the separation mechanism.
  • the absorbing layer (24) may appropriately comprise at least one material selected from the group consisting of: Si x Ny : H, Si3N 4 , Si x Ny, GaN, AIN, InN, or mixed nitrides of one or more of In, Ga and Al or poly Si, amorphous Si (H rich) or crystalline Si.
  • several absorbing layers (24) may be introduced and buried in the bonding layer so that several irradiations for several subsequent separations may be performed.
  • Laser irradiation is preferably carried out in the framework of the present invention across the support substrate (25).
  • the latter support substrate (25) must therefore be substantially transparent to the wavelength of visible light and/or ultraviolet radiation being used to effect the separation mechanism, that is the material of the support substrate has a weak optical absorption coefficient at the wavelength used, for example less than about 10 1 cm "1 , or has a forbidden optical band which is larger than that of the material of the absorbing layer (24).
  • the absorbing layer (24) may appropriately be a material of the type Si x N y :H, Si 3 N 4 in amorphous form, Si x Ny, or a IH-N material deposited for example in a polycrystalline form (the latter being less expensive in an industrial context than a monocrystalline form).
  • HI-N material as the layer (24) absorbing electromagnetic radiation such as visible light and/or ultraviolet radiation. If a substrate such as initial substrate (10) is itself a HI-N material which is to be processed so as to introduce functionalities, the use of the same IH-N material layer as an absorbing layer (24) will preferably be carried out with the two HI-N layers (functionalized layer and sacrificial electromagnetic radiation absorbing layer) being separated by a bonding layer, such as a silicon dioxide bonding layer.
  • a bonding layer such as a silicon dioxide bonding layer.
  • IH-N materials which can be used as absorbing layers, one may cite GaN (with a wavelength of absorption below 360 nm in view of the forbidden band of 3.4 eV), AIN (below 198 nm in view of the forbidden band of 6.2 eV), InN (below 230 nm in view of the forbidden band at 0.7 eV).
  • a Nd/YAG or excimer laser may be used to induce decomposition or other effects of such an electromagnetic radiation absorbing layer (24) that could lead to separation.
  • Ternary or quaternary nitride materials combining aluminium, gallium and indium may also be used as materials for an electromagnetic radiation absorbing layer (24), for example AIGaN or InGaN. These nitride materials are particularly useful because they seem to decompose with production of gaseous nitrogen. Their forbidden band defines a clear threshold of wavelength absorption, at which point the materials show a transition from almost complete transparency to almost complete absorption. Furthermore, their melting point is much higher than the temperature at which they decompose and they give rise to minimum collateral damage to the surrounding substrate when melting.
  • support substrate (25) be substantially transparent or has a high transmittance to the electromagnetic radiation such as ultraviolet and/or visible light in the wavelength region which will be used to irradiate the absorbing layer (24).
  • the preferred minimum thickness of the absorbing layer (24) is 10 nm.
  • support substrate 25
  • high transmittance is observed at wavelengths higher than 350 nm which corresponds to commonly used laser sources.
  • Sapphire is also appropriate for shorter wavelengths.
  • Other appropriate choices for support substrate (25) include materials made of at least one of the following species: LiTaO 3 (substantially transparent at wavelengths higher than 270 nm), LiNbO 3 (substantially transparent at wavelengths higher than 280 nm), MgO (substantially transparent at wavelengths higher than 200 nm), or glass.
  • Other materials may also be suitable to obtain the separation, even if they do not exhibit the same high transmittance value as the one listed above, but may then require higher electromagnetic radiation energy, which is not desirable in an industrial environment.
  • electromagnetic radiation absorbing layer (24) it is possible in the present invention for electromagnetic radiation absorbing layer (24) to be linked to support substrate (25) via a bonding layer, such as an oxide bonding layer.
  • electromagnetic radiation absorbing layer (24) is in direct contact with the support substrate (25), without the intermediary of an oxide bonding layer.
  • a part of the initial substrate is removed to form a layer (aa), after step a) and preferably before step e).
  • An example of such a process is illustrated schematically in Figure 2, where initial substrate (10), in this example after the bonding step Sl, is partially thinned or ablated by a method such as grinding, polishing, SMART CUT®, by a laser lift off technique or etching, to give rise to modified layer (aa) derived from initial substrate (10).
  • a process for modifying a substrate including such a step of removing part of the initial substrate to form a layer (aa), and then, in a step (d), after step c) in the above- mentioned process: - functionalizing the layer (aa); and/or
  • step (aa)' represents a functionalized layer (aa) (derived from initial substrate (10)).
  • Functionalization in step (d), shown in a schematic illustrative example in step S3 of Figure 3 following on from steps Sl and S2 as shown in Figure 2, may include forming regions with photovoltaic, optical, optoelectronic, electronic and/or mechanical functions in or on the layer (aa). It is also to be understood that functionalization step may includes any technological step that changes the layer characteristic such as forming material layers, thin layer or sufficiently thick layer to be freestanding, or forming active layers.
  • a further substrate (30) is bonded to the entity comprising layer (aa), electromagnetic radiation absorbing layer (24) and support substrate (25) in a step S3, following on e.g. from steps Sl and S2 as shown in Figure 2.
  • layer (aa) may have been functionalized is indicated by the legend (aa) / (aa)'.
  • support substrate (25) instead of or in addition to layer (aa), contain regions with photovoltaic, optical, optoelectronic, electronic and/or mechanical functions. Bonding may be performed to join the exposed face of layer (aa), derived from initial substrate (10), to a final substrate (30) that may also be functionalized. Bonding may, for example, be performed via a silicon dioxide bonding layer laid down by the processes discussed above. This bonding may also contain an electromagnetic radiation absorbing layer for a subsequent separation of support substrate (30) if needed.
  • the initial substrate (10) may be a bulk free-standing substrate.
  • the initial substrate (10) may comprise a surface layer (12) having a face (10b) for bonding to the support substrate (25), and an underlying support substrate (11) acting as a template on which surface layer (12) has been deposited.
  • the initial substrate (10) may also comprise a surface layer (12), an intermediate layer and an underlying support substrate (11).
  • the surface layer (12) and bulk substrate (10) from which layer (aa) is formed may appropriately comprise at least one of the group selected from: GaN, InGaN, SiC, Si, Si(OOO), Si(IIl), GaAs, ZnO, crystalline AIN, AIGaN, InGaAs, InP, Ge, InAIAs.
  • the layer (aa) may also be formed in a semiconductor material for example from the IV group materials (such as Si, Ge), the III/V group materials (polar or non polar or semi-polar materials such as GaN, InGaN, InGaAs).
  • the initial substrate (10) to be used in the process of the present invention may appropriately contain an underlying support substrate (11) chosen for a reasonable dilatation coefficient match and/or lattice parameter match between the support and the surface layer (12) comprising sapphire (AI 2 O 3 ), LiTaO 3 , LiNbO 3 , MgO, Si, SiC or a metal alloy containing one or more of Cr, Ni, Mo and W. Such materials may also be used in the final substrate (30), in embodiments where there is such a final substrate.
  • an underlying support substrate (11) chosen for a reasonable dilatation coefficient match and/or lattice parameter match between the support and the surface layer (12) comprising sapphire (AI 2 O 3 ), LiTaO 3 , LiNbO 3 , MgO, Si, SiC or a metal alloy containing one or more of Cr, Ni, Mo and W.
  • Such materials may also be used in the final substrate (30), in embodiments where there is such a final substrate.
  • the initial substrate (10) comprises a surface layer (12) grown on an underlying support substrate (11)
  • the surface layer (12) is a IH-N material
  • appropriate initial seed support materials may for example include: sapphire (AI 2 O 3 ), SiC, Si(IIl), GaAs, ZnO, crystalline AIN.
  • epitaxy as a step of functionalization may be carried out on layer (aa), for example to obtain a sufficient thickness of material for the layer then produced to become a free standing substrate.
  • ion implantation is performed in said initial substrate (10), prior to bonding to the support substrate (25) via the radiation absorbing layer (24) in step (c), so as to provide a plane of weakness defining an upper region of said substrate (10), and removing the upper region by splitting at the plane of weakness.
  • a IH-N material layer is withdrawn from an initial donor substrate using Smart Cut® technology.
  • the HI-N material (12 in Figure 5) may be initially present on a bulk donor substrate (11 in Figure 4).
  • a IH-N material is shown which may be GaN grown by epitaxy on a "template” such as sapphire.
  • An alternative embodiment would be to use a IH-N material attached to a support substrate via an intermediate bonding layer-such an arrangement may be referred to as GaNOS (GaN bonded On Sapphire).
  • Ion implantation is carried out (step Sl in Figure 5), and then bonding (step S2 in Figure 5) is performed to a second substrate, linking the IH-N surface (12) through a bonding material layer (23) to an electromagnetic radiation absorbing layer (24) on a support substrate (25).
  • the bonding may also be performed without the bonding material layer (23), directly between the support substrate, the absorbing layer (24) and the IH-N material layer (12).
  • Splitting (step S3 in Figure 5) at the plane of weakness generated by ion implantation may then be achieved.
  • implantation of hydrogen ions, co- implantation of hydrogen and helium ions, and more generally implantation of light ions may be performed.
  • a generally appropriate implantation dose of hydrogen ions for GaN lies between 1 x 10 17 and 6 x 10 17 atoms / cm 2 , with an implantation energy range of 10 to 210 keV.
  • Implantation may generally be performed at a temperature lying between 20 and 400 0 C, preferably between 50 and 150 0 C.
  • the skilled person knows how to adjust the implantation so as to obtain a depth of the plane of weakness of between 50 and 1000 nm, and the temperature and duration of the heating process used to induce separation and splitting about the plane of weakness are known to varying according to implantation conditions, and in particular the implantation ion dose.
  • step S4 in Figure 5 the surface exposed by splitting about the plane of weakness is bonded to a final substrate (30), in this case chosen to comprise a final support substrate (31) and a bonding layer (33).
  • a final substrate in this case chosen to comprise a final support substrate (31) and a bonding layer (33).
  • step S5 in Figure 5 the entity thus obtained, containing elements from each of the initial, second and third substrates, is subjected to electromagnetic radiation, directed through transparent support substrate (25), the radiation having a wavelength chosen so as to be absorbed by electromagnetic radiation absorbing layer (24) and to lead to the separation of substrate (25).
  • epitaxial growth may be performed on thin layer (12f) so as to produce a substrate of sufficient thickness (for example, greater than 100 microns) to enable it to be freestanding, before fracturing about the plane of weakness.
  • Epitaxial growth may thus be performed before step S2, where a second substrate is bonded via surface layer (12f) to the initial substrate.
  • the thermal treatment due to epitaxial growth has to be less than the heating process to induce the splitting at the plane of weakness.
  • Epitaxial growth may also be performed on the exposed layer after step S3 of separation at the plane of weakness, or after step S5 of separation by irradiation absorption.
  • functionalization may be formed in region (12f), corresponding to layer (aa), so as to form regions with photovoltaic, optical, optoelectronic, electronic and/or mechanical functions therein or thereon.
  • the bonding layer (23), which previously linked the HI-N material layer (12f) with the absorbing layer (24), may be removed.
  • the bonding layer (23) is comprised of silicon dioxide, this layer may appropriately be removed by dry etching or mechanical polishing associated with chemical etching, for example using a dilute aqueous solution (10% by volume) of hydrofluoric acid (HF).
  • III-N materials such as IH-N materials grown on a template such as sapphire, showing a c-plane wurtzite structure, have a gallium and a nitrogen face.
  • the upper face is usually the gallium face, while the bottom surface (adjacent to the growth substrate), the initial donor support substrate (1) is a nitrogen face.
  • a double transfer is carried out in order to expose in the final product the gallium face, i.e. the same which was initially exposed in the initial product. It is consequently possible to begin epitaxy again at this stage on the III-N material with limiting the risk of dislocations and cracks, with respect to the situation where epitaxy was attempted starting from the nitrogen face.
  • wafers of any particular diameter may be manipulated, without any specific limitation.
  • step (e) epitaxy or further functionalization may be carried out on the bonding face (10b) of the initial substrate (10) liberated by the irradiation of electromagnetic radiation absorbing layer (24) in step
  • the structure that can be used in the process of the invention is obtained by ion implantation in a substrate such as bulk GaN, followed by epitaxy of a HI-N material such as InGaN in such a way as to not exceed the energy input required to split the substrate along the plane of weakness generated by ion implantation, followed by bonding the GaN/InGaN material to an absorbing layer on an intermediary substrate and then carrying out fracture along the plane of weakness (analogous to step S3 in Figure 5). It is also possible to perform implantation after the epitaxy of the InGaN layer and before covering by a protection layer, so that epitaxy thermal budget is not limited.
  • the implanted HI-N material In order to ensure successful fracture about the plane of weakness, it is preferable to first bond the implanted HI-N material to an intermediate support, as shown in step S2 of Figure 5 in relation to the second embodiment, which rigidifies and strengthens the stacked entity.
  • the present second embodiment is of interest in order to be able to continue epitaxy with InGaN, this being of interest in LED applications for example.
  • a layer of InGaN may be grown by epitaxy on a GaNOS substrate and then ion implantation may be carried out in the InGaN.
  • the exposed upper face in the InGaN layer which has gallium polarity, is bonded to an intermediate substrate having a bonding layer (23) and an absorbing layer (24).
  • the structure consisting of the sacrificial intermediate support, the UV and/or visible light absorbing layer, the bonding layer and the InGaN layer can be bonded to a final support substrate (see step S4 of Figure 5), which may for example be a sapphire substrate. Separation can then be carried out using irradiation via the support substrate (25) of the intermediate substrate, and a InGaNOS substrate is obtained with the required polarity on the upper face in order to begin proceed with further epitaxy.
  • bonding between the initial substrate (10) and the second substrate (25) may be carried out using one or more silicon oxide bonding layers.
  • one or more of the bonding layer(s), such as oxide bonding layer(s), may contain at least one embedded region of electromagnetic radiation absorbing material comprising Si x N y/ Si x Ny : H, S ⁇ 3 N 4 , GaN, AIN, InN, or mixed nitrides of one or more of In, Ga and Al.
  • an InGaN layer is transferred using a process of molecular bonding and released by irradiation of an electromagnetic radiation absorbing layer according to the invention.
  • An initial substrate is provided in which a layer of InGaN (12t) to be transferred is formed by epitaxy on a template showing a seed layer of GaN (12s) grown by epitaxy on, as an example, a sapphire support substrate (11). This is shown as step Sl in Figure 6, where the InGaN layer on GaN is together represented as layer (12), and the underlying support substrate (11) is sapphire.
  • the thickness of the layer of InGaN will be approximately 100 nm and the amount of indium will be of the order of 5 to 15%.
  • the dislocation density in the layer will preferably be below 5xlO 8 /cm 2 .
  • GaN grown by epitaxy on a c-plane sapphire is a polar material and the upper free face is a gallium (Ga) face. This polarity is conserved by the InGaN which is grown thereupon.
  • an oxide bonding layer (SiC ⁇ , layer (13) in the Figure) is laid down on the InGaN layer by a LPOJD technique.
  • An appropriate thickness will be about 300 nm.
  • step S3 implantation by ions such as hydrogen and/or helium can be carried out through the oxide layer (13) and through the InGaN, in order to create a zone of weakness at a depth of about 500 nm, the zone of weakness being situated in the GaN seed layer.
  • a dose of the order of 4 x 10 17 atoms/cm 2 is appropriate for such an implantation.
  • an intermediate substrate comprising, in order, a support substrate such as sapphire (25), an absorbant layer (24) such as Si x Ny laid down by a PECVD technique with a thickness of about 100 nm, and a silicon dioxide bonding layer (23) having a thickness of about 500 nm, is provided.
  • Molecular bonding is used to link the initial and intermediate substrate entities via the oxide bonding layers (13 and 23) which are brought into contact.
  • step S7- the silicon dioxide layer is represented as 33.
  • step S8 the structure obtained in step S7 is put into contact with the final support substrate of sapphire, labelled (31) (step S8).
  • Bonding reinforcement thermal treatment may be carried out, involving heating at 300 to 950 0 C during several hours.
  • electromagnetic radiation absorbing layer (24) may be irradiated, for instance by sweeping a laser beam at the surface of the substrate, at a wave length of 193 nm in order to induce decomposition and separation of the intermediate support (25 in combination with 24), possibly with the addition of mechanical energy.
  • the absorbing layer (34) may be used as a separation layer for separation of the support substrate (31) in a subsequent use of the final entity if needed.

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Abstract

La présente invention concerne un procédé de modification de substrat (10) qui consiste : (a) à disposer d’un substrat initial (10) présentant une face de liaison (10b) et une face opposée (10r) ; (b) à disposer d’un substrat de support (25) ; la face de liaison (10b) du substrat initial (10) et/ou la face du substrat de support (25) étant pourvues d’une couche absorbant les rayonnements électromagnétiques (24), le substrat de support (25) étant sensiblement transparent à une longueur d’onde de rayonnements électromagnétiques ; (c) à effectuer une liaison afin de relier la face de liaison (10b) du substrat initial (10) au substrat de support (25) au moyen de la couche absorbant les rayonnements électromagnétiques (24) ; et (e) à irradier la couche absorbant les rayonnements électromagnétiques (24) au travers du substrat de support (25) sensiblement transparent afin d’induire une séparation du substrat de support (25).
PCT/IB2008/003101 2008-08-06 2008-09-08 Procédé de modification d’un substrat Ceased WO2010015878A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW098125948A TW201029049A (en) 2008-08-06 2009-07-31 Process for modifying a substrate

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
EP08290757A EP2151856A1 (fr) 2008-08-06 2008-08-06 Relâchement de couches tendues
EP08290759.3A EP2151852B1 (fr) 2008-08-06 2008-08-06 Relâchement et transfert de couches tendues
EP08290757.7 2008-08-06
EP08290759.3 2008-08-06

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Publication Number Publication Date
WO2010015878A2 true WO2010015878A2 (fr) 2010-02-11
WO2010015878A3 WO2010015878A3 (fr) 2010-04-15

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Cited By (13)

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CN102810466A (zh) * 2011-05-10 2012-12-05 Soitec公司 用于制造半导体衬底的方法
EP2645429A1 (fr) 2012-03-28 2013-10-02 Soitec Fabrication de dispositifs à cellules solaires multijonctions
EP2645428A1 (fr) 2012-03-28 2013-10-02 Soitec Fabrication de dispositifs à cellules solaires multi-jonctions
EP2645431A1 (fr) 2012-03-28 2013-10-02 Soltec Fabrication de dispositifs à cellules solaires multijonctions
EP2645430A1 (fr) 2012-03-28 2013-10-02 Soitec Fabrication de dispositifs à cellules solaires multijonctions
US8970045B2 (en) 2011-03-31 2015-03-03 Soitec Methods for fabrication of semiconductor structures including interposers with conductive vias, and related structures and devices
TWI499078B (zh) * 2013-01-31 2015-09-01 Just Innovation Corp 元件基板、元件基板的製造方法、光電裝置及其製造方法
TWI606611B (zh) * 2016-08-30 2017-11-21 光磊科技股份有限公司 具亞胺化鋰層的基板、具亞胺化鋰層的ｌｅｄ及其相關製作方法
JP2018522426A (ja) * 2015-06-19 2018-08-09 キューエムエイティ・インコーポレーテッド 接合剥離層転写プロセス
KR20180138138A (ko) * 2017-06-20 2018-12-28 엘타 시스템즈 리미티드 갈륨 나이트라이드 반도체 구조 및 그 제조 방법
WO2021041138A1 (fr) * 2019-08-28 2021-03-04 Semileds Corporation Procédé de fabrication de puces (del) au moyen d'un décollement laser depuis un substrat vers une plaque réceptrice
EP4418334A1 (fr) * 2023-02-16 2024-08-21 Lumileds LLC Formation de dispositif à del à l'aide d'une liaison de tranche inorganique libérable
FR3156987A1 (fr) * 2023-12-18 2025-06-20 Wormsensing Procédé de transfert de couche fonctionnelle

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TWI499078B (zh) * 2013-01-31 2015-09-01 Just Innovation Corp 元件基板、元件基板的製造方法、光電裝置及其製造方法
JP2018522426A (ja) * 2015-06-19 2018-08-09 キューエムエイティ・インコーポレーテッド 接合剥離層転写プロセス
EP3311422A4 (fr) * 2015-06-19 2019-06-12 Qmat, Inc. Processus de transfert de couche d'adhésion et de libération
EP3544065A1 (fr) * 2015-06-19 2019-09-25 Qmat, Inc. Processus de transfert de couche d'adhésion et de libération
TWI606611B (zh) * 2016-08-30 2017-11-21 光磊科技股份有限公司 具亞胺化鋰層的基板、具亞胺化鋰層的ｌｅｄ及其相關製作方法
KR20180138138A (ko) * 2017-06-20 2018-12-28 엘타 시스템즈 리미티드 갈륨 나이트라이드 반도체 구조 및 그 제조 방법
KR102549134B1 (ko) 2017-06-20 2023-06-28 엘타 시스템즈 리미티드 갈륨 나이트라이드 반도체 구조 및 그 제조 방법
WO2021041138A1 (fr) * 2019-08-28 2021-03-04 Semileds Corporation Procédé de fabrication de puces (del) au moyen d'un décollement laser depuis un substrat vers une plaque réceptrice
US11417799B2 (en) 2019-08-28 2022-08-16 Semileds Corporation Method for fabricating (LED) dice using laser lift-off from a substrate to a receiving plate
US11862755B2 (en) 2019-08-28 2024-01-02 Shin-Etsu Chemical Co., Ltd. Method for fabricating (LED) dice using laser lift-off from a substrate to a receiving plate
US11862754B2 (en) 2019-08-28 2024-01-02 Semileds Corporation Method for fabricating (LED) dice using semiconductor structures on a substrate and laser lift-off to a receiving plate
EP4418334A1 (fr) * 2023-02-16 2024-08-21 Lumileds LLC Formation de dispositif à del à l'aide d'une liaison de tranche inorganique libérable
FR3156987A1 (fr) * 2023-12-18 2025-06-20 Wormsensing Procédé de transfert de couche fonctionnelle
WO2025132429A1 (fr) * 2023-12-18 2025-06-26 Wormsensing Procédé de transfert de couche fonctionnelle

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