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WO2010013348A1 - Electron beam recorder, its controller, and control method - Google Patents

Electron beam recorder, its controller, and control method Download PDF

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Publication number
WO2010013348A1
WO2010013348A1 PCT/JP2008/063907 JP2008063907W WO2010013348A1 WO 2010013348 A1 WO2010013348 A1 WO 2010013348A1 JP 2008063907 W JP2008063907 W JP 2008063907W WO 2010013348 A1 WO2010013348 A1 WO 2010013348A1
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WO
WIPO (PCT)
Prior art keywords
electron beam
pattern
substrate
signal
translation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/063907
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French (fr)
Japanese (ja)
Inventor
寛顕 鈴木
章雄 福島
孝幸 糟谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
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Filing date
Publication date
Application filed by Pioneer Corp filed Critical Pioneer Corp
Priority to PCT/JP2008/063907 priority Critical patent/WO2010013348A1/en
Publication of WO2010013348A1 publication Critical patent/WO2010013348A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/82Disk carriers
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/855Coating only part of a support with a magnetic layer
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/26Apparatus or processes specially adapted for the manufacture of record carriers
    • G11B7/261Preparing a master, e.g. exposing photoresist, electroforming

Definitions

  • the present invention relates to an electron beam recording apparatus, a control apparatus, and a control method for manufacturing a master.
  • Magnetic disks or hard disks are used in personal computer (PC) storage devices, mobile devices, in-vehicle devices, and the like.
  • PC personal computer
  • the application has been remarkably expanded and the surface recording density has been rapidly improved.
  • Electron beam mastering technology has been extensively studied for manufacturing such high recording density hard disks.
  • an electron beam lithography exposure apparatus an electron beam spot emitted from an electron gun and focused by an electron lens is irradiated onto a substrate coated with a resist.
  • the irradiation position of the electron beam spot is controlled by a blanking control system and a beam deflection control system, and a desired beam pattern is drawn.
  • an electron beam exposure apparatus an apparatus for accurately creating a master disk of a recording medium such as an optical disk has been developed. For example, it is described in JP-A-2002-367178.
  • the problem to be solved by the present invention is that it is possible to draw pits and arbitrary patterns of various shapes with high precision, an electron beam recording apparatus having high flexibility and excellent controllability, its control apparatus, and control
  • One example is to provide a method and a computer program.
  • a control device is a control device for an electron beam recording device that draws a pattern on a substrate by irradiating an electron beam while rotating and translating the substrate,
  • a storage unit for storing a setting value for drawing a pattern piece on the substrate of the electron beam;
  • a modulation signal generator for generating a modulation signal for drawing the pattern piece on the substrate by the electron beam based on the set value;
  • the set value is characterized in that it is determined so that the pattern is constituted by a combination of a plurality of the pattern pieces.
  • the program according to the present invention is a computer program used for controlling an electron beam recording apparatus that irradiates an electron beam while rotating and translating a substrate to draw a pattern on the substrate.
  • the computer is caused to execute a modulation signal generation step for generating a modulation signal for drawing the pattern piece on the substrate by the electron beam.
  • An electron beam recording apparatus is an electron beam recording apparatus that draws a pattern on a substrate by irradiating the electron beam while rotating and translating the substrate, A storage unit for storing a setting value for drawing the pattern piece on the substrate of the electron beam, and a modulation signal for drawing the pattern piece on the substrate by the electron beam based on the setting value are generated.
  • a modulation signal generator, and the setting value is determined such that the pattern is configured by a combination of a plurality of the pattern pieces;
  • a rotation and translation drive unit for rotating and translating the substrate; and And an electron beam modulator that performs on / off modulation of the electron beam in accordance with the modulation signal.
  • FIG. 1 is a block diagram schematically showing the configuration of an electron beam recording apparatus (EBR) that is Embodiment 1 of the present invention.
  • FIG. 2 is a block diagram schematically showing the configuration of the formatter shown in FIG.
  • FIG. 3 is a diagram showing a drawing sequence performed by the EBR by the formatter control.
  • FIG. 4 is a time chart showing the control of the formatter which is Embodiment 1 of the present invention.
  • FIG. 5 is a diagram for explaining the deflection control of the electron beam with respect to the translational movement of the substrate.
  • FIG. 6 is a top view of the substrate, illustrating the deflection control of the formatter that draws the lines LN1 to LN4 with the spiral beam trajectory (broken line) as the concentric beam trajectory (solid line).
  • FIG. 9 is a diagram schematically showing the pit piece V (j) when a drawing shift is performed by the outer peripheral direction and inner peripheral direction offset signals F8 and F9.
  • FIG. 10 is a diagram schematically showing adjustment of the dose profile in the radial direction.
  • FIG. 11 is a diagram schematically showing the adjustment of the dose profile in the tangential direction.
  • FIG. 12 is a diagram schematically illustrating a spiral beam trajectory controlled by the formatter.
  • FIG. 1 schematically shows a configuration of an electron beam recording apparatus (EBR: Electron Beam Recording (hereinafter referred to as EBR)) 10 and an EBR control device (formatter) 50 that controls the EBR 10 according to a first embodiment of the present invention.
  • EBR Electron Beam Recording
  • the electron beam recording apparatus 10 is an EB mastering apparatus that uses an electron beam to create, for example, a master for manufacturing a magnetic disk.
  • the EBR control device (formatter) 50 may be incorporated in the EBR 10 and may be configured as an electron beam recording device (EBR) 10 as a whole.
  • EBR electron beam recording device
  • a configuration EBR 10 of an electron beam recording device (EBR) 10 includes a vacuum chamber 11, a stage driving device for mounting, rotating, and translating a substrate disposed in the vacuum chamber 11, and an electron beam attached to the vacuum chamber 11.
  • Various circuits and control systems for controlling the column 20 and the stage driving device, controlling the electron beam, and the like are provided.
  • the substrate 15 for the master disc is placed on the turntable 16.
  • a resist material that is exposed to an electron beam is applied on a substrate 15 such as a glass substrate or a silicon substrate.
  • the turntable 16 is rotationally driven with respect to the vertical axis (Z axis) of the main surface of the disk substrate by a spindle motor 17 which is a rotational drive device that rotationally drives the substrate 15.
  • the spindle motor 17 is provided on a translation stage (hereinafter also simply referred to as a stage) 18.
  • the stage 18 is coupled to a translation motor 19 which is a transfer (translation drive) device, and can move the spindle motor 17 and the turntable 16 in a predetermined direction in a plane parallel to the main surface of the substrate 15. Yes.
  • the substrate 15 is held by suction on the turntable 16.
  • the turntable 16 is made of a dielectric, for example, ceramic, and has an electrostatic chucking mechanism (not shown).
  • Such an electrostatic chucking mechanism includes a turntable 16 and an electrode made of a conductor provided in the turntable 16 for causing electrostatic polarization.
  • a high voltage power source (not shown) is connected to the electrode, and the substrate 15 is held by suction by applying a voltage from the high voltage power source to the electrode.
  • optical elements such as a reflection mirror 35A and an interferometer, which are a part of a laser position measurement system 35 described later, are arranged.
  • the vacuum chamber 11 is installed via an anti-vibration table (not shown) such as an air damper, and vibration transmission from the outside is suppressed.
  • the vacuum chamber 11 is connected to a vacuum pump (not shown), and the interior of the vacuum chamber 11 is set to a vacuum atmosphere at a predetermined pressure by evacuating the chamber.
  • an electron gun (emitter) 21 for emitting an electron beam a converging lens 22, a blanking electrode 23, an aperture 24, a beam deflection coil 25, an alignment coil 26, a deflection electrode 27, a focus lens 28, an objective
  • the lenses 29 are arranged in this order.
  • the electron gun 21 emits an electron beam (EB) accelerated to several tens of KeV by a cathode (not shown) to which a high voltage supplied from an acceleration high-voltage power supply (not shown) is applied.
  • the converging lens 22 converges the emitted electron beam.
  • the blanking electrode 23 performs on / off switching (ON / OFF) of the electron beam based on the modulation signal from the blanking control unit 31. That is, by applying a voltage between the blanking electrodes 23 to greatly deflect the passing electron beam, the electron beam is prevented from passing through the aperture 24, and irradiation of the electron beam to the substrate 15 is turned off (non- Irradiation).
  • the alignment coil 26 corrects the position of the electron beam based on the correction signal from the beam position corrector 32.
  • the deflection electrode 27 can control the deflection of the electron beam in the radial direction and the tangential direction at high speed based on the control signal from the deflection control unit 33. Further, it may be configured to have a plurality of deflection electrodes for controlling deflection in each of the radial direction and the tangential direction. With this deflection control, the position of the electron beam spot relative to the substrate 15 is controlled.
  • the focus lens 28 performs electron beam focus control based on a control signal from the focus control unit 34.
  • the vacuum chamber 11 is provided with a light source 36A and a photodetector 36B for detecting the height of the main surface of the substrate 15.
  • the photodetector 36B includes, for example, a position sensor, a CCD (Charge Coupled Device), etc., receives a light beam (laser light) emitted from the light source 36A and reflected by the surface of the substrate 15, and increases the received light signal. This is supplied to the thickness detector 36.
  • the height detection unit 36 detects the height of the main surface of the substrate 15 based on the light reception signal, and generates a detection signal.
  • a detection signal indicating the height of the main surface of the substrate 15 is supplied to the focus control unit 34, and the focus control unit 34 performs focus adjustment of the electron beam based on the detection signal.
  • the laser position measurement system 35 measures the distance to the stage 18 using the measurement laser light from the light source in the laser position measurement system 35 and sends the measurement data, that is, the position data of the stage 18 to the translation controller 37.
  • the translation controller 37 performs translation control of the X stage in synchronization with a translation clock signal (T-CLK) F4 which is a reference signal supplied from the formatter 50.
  • the translation controller 37 generates a translation error signal based on the stage position data from the laser position measurement system 35 and sends it to the beam position corrector 32.
  • the beam position corrector 32 corrects the position of the electron beam based on the translation error signal.
  • the translation controller 37 generates a control signal for controlling the translation motor 19 and supplies it to the translation motor 19.
  • the rotation controller 38 controls the rotation of the spindle motor 17 in synchronization with a rotation clock signal (R-CLK) F5 which is a reference signal supplied from the formatter 50. More specifically, the spindle motor 17 is provided with a rotary encoder (not shown), and generates a rotation signal when the turntable 16 (that is, the substrate 15) is rotated by the spindle motor 17.
  • the rotation signal includes an origin signal indicating the reference rotation position of the substrate 15 and a pulse signal (rotary encoder signal) for each predetermined rotation angle from the reference rotation position.
  • the rotation signal is supplied to the rotation controller 38.
  • the rotation controller 38 detects a rotation error of the turntable 16 based on the rotary encoder signal, and corrects the rotation of the spindle motor 17 based on the detected rotation error.
  • EBR I / F EBR interface circuit
  • the modulation signal F1 and the deflection signal F3 are supplied from the EBR controller 50.
  • the blanking control unit 31 performs blanking control (electron beam on / off) based on the modulation signal F1
  • the deflection control unit 33 performs electron beam deflection control based on the deflection signal F3.
  • the control signal from the EBR control device 50 and the operation of the EBR control device 50 based on the control signal will be described in detail below.
  • the formatter 50 includes an EBR control signal generator (processor) 51 that generates a control signal for controlling the EBR 10, and a formatter interface circuit (formatter I / F) 54. Specifically, control signals, control data, and the like generated by the control data generator 51 are sent to the EBR 10 via the formatter interface circuit 54.
  • EBR control signal generator processor
  • formatter I / F formatter interface circuit
  • the formatter 50 is provided with a clock signal generator 52 for generating various clock signals described later.
  • the clock signal generator 52 generates a clock signal corresponding to, for example, CLV (Constant Line Velocity) drawing or CAV (Constant Angular Velocity) drawing. That is, as will be described in detail later, the clock signal generator 52 generates a rotation clock and a translation clock signal representing the driving amounts of the spindle motor 17 and the translation motor 19.
  • the formatter 50 also has a memory 53 for storing setting values and data related to various control signals described later, and an input / output unit 55 for inputting setting values used for controlling the EBR 10. Further, the formatter 50 is provided with a display unit 56 for displaying the operating conditions, operating states, setting values, and the like of the EBR 10 and the formatter 50.
  • control signals used to control the EBR 10 between the formatter interface circuit (formatter I / F) 54 and the EBR interface circuit (EBR I / F) 39 provided in the EBR 10 Is described as follows.
  • F3-Saw-Tooth-Deflection-X hereinafter also referred to as a saw-tooth deflection signal F3 or simply a deflection signal F3.
  • F4-translation clock signal F4-Translation-clock: hereinafter also referred to as a translation clock signal F4 or simply a translation clock F4.
  • the EBR apparatus drives the translation stage (X stage) in synchronization with this signal.
  • the pulse reference unit ( ⁇ X) can be set on the formatter side. As a default value, for example, 632.991345 / 1024 nm. Also, ⁇ X / 2, ⁇ X / 4, ⁇ X / 8, etc. can be set.
  • Reference signal to the rotating spindle output by the formatter is, for example, 3600 pulse / rev.
  • the duty is 50%.
  • F6-Start signal (F6- / Start) Hereinafter, it is also referred to as a drawing start signal F6 or simply a start signal F6.
  • the formatter notifies the EBR device of the end of drawing (signal output) with “High”.
  • the period during which the translation clock signal F4 and the rotation clock signal F5 are valid is “Low”.
  • the EBR apparatus sets the drawing start signal F6 to “High” and finishes drawing the current job.
  • F8-Beam Outer Direction Offset Signal F8-BeamOffsetOut: Hereinafter also referred to as an outer periphery direction offset signal F8 or a high speed offset (+) signal F8.
  • F9-Beam inner direction offset signal (F8-BeamOffsetOut): Hereinafter also referred to as an inner periphery direction offset signal F9 or a high-speed offset (-) signal F9.
  • F16-Beam / Tangential Deflection Signal (F16-BeamTangentialDeflection): Hereinafter also referred to as a tangential deflection signal F16.
  • FIG. 3 is a diagram showing a drawing sequence performed by the EBR 10 under the control of the formatter 50.
  • the formatter 50 Prior to starting the job for drawing, the formatter 50 sets the drawing end signal F7 (F7-End) to “Low” and outputs the translation clock signal F4 and the rotation clock signal F5 (FIG. 3, time). Tp). At this time, the translation clock signal F4 and the rotation clock signal F5 are clock signals having a frequency (Fini) at the start of the drawing job.
  • the EBR 10 After the translation clock signal F4 and the rotation clock signal F5 become effective (signal output), the EBR 10 operates in synchronization with these clocks, and when the drawing start radius is reached, the EBR 10 outputs the drawing start signal F6 (F6). -/ Start) is set to “Low” (active).
  • the formatter 50 starts drawing in response to the start signal F6 becoming active. That is, output of the modulation signal F1, which is a drawing signal, is started (FIG. 3, time Tini).
  • FIG. 4 is a time chart showing the control of the formatter 50 which is Embodiment 1 of the present invention.
  • the EBR 10 draws concentric lines, but draws data with a plurality of lines as one track. Note that the case where the EBR 10 draws concentric lines will be described as an example. However, the drawing is not limited to the case where the EBR 10 draws concentric lines. Also in the case of drawing a line in a spiral shape (spiral shape), the control of the formatter 50 described below can be easily modified and applied.
  • the formatter 50 outputs a translation clock (T-CLK) F4 and a rotation clock (T-CLK) F5.
  • the formatter 50 outputs a deflection signal F3 (first deflection signal).
  • the substrate 15 is translated at a constant speed by a translation clock (T-CLK) F4. More specifically, the substrate 15 extends in the X direction from the position at the start of drawing (indicated by a broken line, the center of the substrate is indicated by O) to the position at the end of one rotation (indicated by a solid line, the center of the substrate is indicated by O ′) Translate.
  • the electron beam EB is deflected so as to follow the substrate 15 by the deflection signal F3. That is, as shown in FIG. 6, when the deflection (that is, the emission direction) of the electron beam EB is fixed, a spiral beam locus (indicated by a broken line) is formed on the substrate 15.
  • the EBR 10 draws a concentric line LN1 (shown by a solid line).
  • the radial position (radial position) of the beam spot on the substrate 15 with respect to the center of the substrate 15 has moved by the translational distance required for drawing the line LN1. As shown in FIG. 7, this distance becomes a pitch q between lines (referred to as a line pitch).
  • the pit W in the present embodiment is one form of a drawing pattern, and a pattern having various shapes can be drawn without being limited to the pit.
  • a line of pits W pit sequence WW is drawn using the lines LN1 to LN4 as one track.
  • the profile of the electron beam has a spread (generally, a Gaussian shape), and the dose profile (dose distribution) varies depending on the forward and back scattering of the irradiation beam.
  • the formatter 50 controls the interval between drawing lines adjacent to each other so that the dose profile of each line overlaps. Accordingly, the dose amount profile by drawing (beam irradiation) of the lines LN1 to LN4 is a combination of these.
  • a pit W having an arbitrary shape can be formed by the pit pieces V (1) to V (4).
  • the line drawing pattern is a row (pit piece sequence) of pit pieces V (1) to be drawn on the drawing line LN1, and the pit piece sequence of the line LN1 is, for example, k1 pit pieces V ( 1, k1).
  • the formatter 50 includes a pit piece drawing end point (hereinafter referred to as “drawing start point”) VS (1) from the pit piece drawing start point (hereinafter simply referred to as drawing start point) of the pit piece V (1) on the line LN1. This is simply referred to as a drawing end point.) Drawing (beam irradiation) is performed up to VE (1). Thereby, drawing of the pit piece V (1) is performed.
  • the drawing start position and the drawing end point, or set values of the pit piece drawing length described later are stored in the memory 53 or a storage unit provided in the EBR control signal generator (processor) 51.
  • the memory 53 stores hard disk drawing pattern data (such as concentric circular patterns, track area patterns, servo area patterns, etc.) such as discrete track media and bit patterned media.
  • the processor 51 generates a control signal for the EBR 10 using the drawing pattern data.
  • the outer peripheral direction and inner peripheral direction offset signals F8 and F9 which are beam shift signals (second deflection signals) in the radial direction are not output, and the beam is shifted at high speed. The amount is zero. Therefore, the pit piece sequence VQ (1) of the line is drawn without shifting from the line LN1.
  • the above steps S12 to S15 are executed for the line LN2, and the pit piece sequence VQ (2) is drawn on the line LN2.
  • the beam is deflected (+ shifted) in the outer peripheral direction by the outer peripheral direction offset signal F8, and drawing is performed (FIG. 9).
  • the pit piece V (2) is drawn from the drawing start point VS (2) to the pit piece drawing end point VE (2), and the pit piece V (2) is drawn. Is done.
  • the drawing line LN3 is drawn from the drawing start point VS (3) to the pit piece drawing end point VE (3) in a state where the beam is deflected ( ⁇ shifted) to the inner circumference by the inner circumference direction offset signal F9. Drawing of the pit piece V (3) is performed (FIG. 9).
  • the drawing line LN4 is not deflected by the outer and inner circumferential offset signals F8 and F9, but is drawn from the drawing start point VS (4) to the pit piece drawing end point VE (4). Drawing of the piece V (4) is performed (FIG. 9).
  • step S15 When it is determined that the drawing line LN4 has been drawn, it is determined that drawing of the drawing pattern WW has ended (step S15), and this control is ended (FIG. 8).
  • the substrate 15 on which drawing has been completed is processed into a hard disk mold (stamper) through a development process and an etching process.
  • an arbitrarily shaped pit W can be formed by synthesizing the pit pieces V (1) to V (4). More specifically, the dose profile changes according to the overlapping of drawing of the pit pieces V (1) to V (4) or the beam intensity in drawing (beam irradiation). That is, the profile of the electron beam is broad (generally a Gaussian shape), and the dose profile changes depending on the forward and back scattering of the irradiation beam. Accordingly, the actual shape of the pit W (dose amount profile) is a combination of these. More specifically, as shown in FIG. 10, the dose profile in the radial direction can be adjusted by drawing the pit pieces V (1) to V (4). For example, the central portion in the radial direction can be strengthened as in the profile RA, or the edge portion in the radial direction can be strengthened as in the profile RB.
  • the formatter 50 outputs a tangential deflection signal F16 (third deflection signal) and deflects the beam in a tangential direction or a circumferential direction (+ ⁇ , ⁇ direction) at a high speed when drawing the pit piece V (j).
  • F16 third deflection signal
  • the dose profile in the tangential direction or the circumferential direction can be adjusted.
  • the central portion in the tangential direction can be strengthened as in the profile TA, or the edge portion in the tangential direction can be strengthened as in the profile TB.
  • the offset amounts (offset signals F8 and F9) in the outer circumferential direction and the inner circumferential direction can be arbitrarily set, and the formatter 50 has a function of adjusting the offset amount according to the input overlapping degree.
  • the formatter 50 generates and outputs the control signals F1 to F16 described above in order to form the drawing pattern of the arbitrary shape described above on the substrate 15.
  • the formatter 50 controls the amount of drawing overwriting, the degree of overwriting of drawing lines (radial beam deflection amount) and the like based on drawing definition information data (hereinafter referred to as definition information) that defines a drawing pattern. And a control signal representing the control amount is generated.
  • drawing mode CLV, CAV, etc.
  • drawing position disk track, sector, etc.
  • translation clock signal F4 The rotation clock signal F5 and the deflection signal F3 are generated and output.
  • outer peripheral direction and inner peripheral direction offset signals F8, F9 outer peripheral direction and inner peripheral direction offset signals F8, F9, (3) tangential direction or circle Adjustment of the dose profile in the circumferential direction (tangential deflection signal F16) is performed.
  • the formatter 50 receives drawing definition information such as a drawing mode, the number of overwriting, the degree of overlapping of drawing of each line, a drawing pit pattern (pit sequence) and individual pit shapes, for example, from the input / output unit.
  • the control signal is automatically generated based on the definition information.
  • the EBR control signal generator (processor) 51 of the formatter 50 displays drawing definition information such as a drawing pit pattern and pit shape for each drawing line in the outer peripheral direction and inner peripheral direction offset amount for each pit piece, and in the tangential direction.
  • a conversion table for converting to the above-described deflection or the like is provided in advance, and the control signal described above is automatically generated based on the conversion table.
  • the control by the formatter 50 described above can also be realized as a computer program. That is, the modulation signal F1, the deflection signal F3, the tangential deflection signal F16, the translation clock signal F4, the rotation clock signal F5, the drawing start signal F6, the drawing end signal F7, etc., which are the above control signals, are overwritten, the drawing pit pattern. Or a computer program including a designation or command generated based on drawing settings such as a pit shape or the like. The computer program can be executed by a processor to generate the control signal to control the electron beam recording apparatus.
  • the case where the EBR 10 draws concentric lines has been described as an example.
  • the above-described formatter 50 can be easily controlled even when pit pieces and pits are drawn on various beam trajectories. Can be modified and applied.
  • the above-described control of the formatter 50 can be applied to a case where a line is drawn in a spiral shape (spiral shape).
  • the formatter 50 generates the translation clock signal F4, the rotation clock signal F5, and the deflection signal F3 so that the track is spiral.
  • the beam trajectory on the substrate 15 is spiral (broken line) by fixing the deflection (that is, the emission direction) of the electron beam EB.
  • the beam deflection is performed by the deflection signal F3 so that the electron beam EB follows the substrate 15.
  • the deflection signal F3 is constant during drawing in the drawing sequence shown in FIG.
  • the beam deflection can be fixed. That is, drawing can be performed in a spiral shape.
  • the beam direction is fixed by not applying or using the deflection signal (following deflection signal), so that drawing can be performed in a spiral shape.
  • FIG. 12 schematically shows a spiral beam trajectory controlled by the formatter 50.
  • the pit piece drawing of the pit piece V (j) on the line LSj is performed in the j-th rotation of the substrate 15.
  • the pit piece V (j) is drawn.
  • the pit piece drawing end point VE (j) is defined or set, and drawing (beam irradiation) is performed from the drawing start point VS (j) to the drawing end point VE (j). It may be.
  • drawing start position and drawing end point, or set values of the pit piece drawing length are stored in the memory 53 or a storage unit provided in the EBR control signal generator (processor) 51.
  • the beam is deflected (+ shifted) in the outer circumferential direction by the outer circumferential direction offset signal F8, or the beam is deflected ( ⁇ shifted) in the inner circumferential direction by the inner circumferential direction offset signal F9. It is also possible to draw in a state of being).
  • the drawing in the drawing of the pit piece V (2) on the line LS2, the drawing is performed in a state where the beam is deflected ( ⁇ shifted) to the inner circumference by the inner circumference direction offset signal F9.
  • the drawing of the pit piece V (3) on the line LS3 shows that the beam is deflected (+ shifted) in the outer peripheral direction by the outer peripheral direction offset signal F8 and drawing is performed.
  • the profile of the dose amount in the radial direction can be adjusted by drawing the pit pieces V (2) to V (3).
  • the edge portion in the radial direction of the pit W obtained by the synthesis of the pit pieces V (1) to V (4) becomes a dose amount profile enhanced compared to the central portion in the radial direction.
  • the tangential direction can be obtained by outputting the tangential deflection signal F16 and deflecting the beam in the tangential direction or the circumferential direction (+ ⁇ , ⁇ direction) at a high speed when drawing the pit piece V (j).
  • the dose profile in the circumferential direction can be adjusted.
  • the dose adjustment by the tangential deflection signal F16 may be used alone, or may be used together with the dose adjustment by the outer peripheral direction offset signal F8 and / or the inner peripheral direction offset signal F9.
  • a pit W having an arbitrary shape can be formed by synthesizing the pit pieces V (1) to V (4).
  • the offset amounts (offset signals F8 and F9) and the tangential deflection signal F16 in the outer circumferential direction and the inner circumferential direction can be arbitrarily set, and the formatter 50 adjusts the offset amount according to the input overlapping degree. It has a function.
  • the above pits can be drawn at any position on the substrate. Also, by setting the drawing start position and drawing end point or drawing length of each pit piece V (j), and the dose amount adjustment, it is possible to draw a pit having an arbitrary shape. Furthermore, one or a plurality of pits can be drawn on the substrate, and a plurality of pits can be drawn at positions adjacent to each other or discretely. For example, by drawing a plurality of pits at positions adjacent to each other, it is possible to draw one pit having an arbitrary shape formed by combining a plurality of pits.
  • the present embodiment is applicable not only to electron beams but also to drawing using other means such as ion beams. Further, the present invention can be applied not only to a hard disk original plate but also to a fine structure such as an optical disk.

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Abstract

An electron beam recorder has a storage section for storing a setting value for drawing a pattern piece on the substrate of an electron beam and a modulated signal generator for generating a modulated signal for allowing the electron beam to draw the pattern piece on the substrate on the basis of the setting value. The setting value is defined so that the pattern is constructed of the combination of the pattern pieces.

Description

電子ビーム記録装置及びその制御装置並びに制御方法Electron beam recording apparatus, control apparatus and control method thereof

 本発明は、原盤を製造するための電子ビーム記録装置及びその制御装置並びに制御方法に関する。 The present invention relates to an electron beam recording apparatus, a control apparatus, and a control method for manufacturing a master.

 磁気ディスク又はハードディスク(HD:Hard Disk)は、パーソナルコンピュータ(PC)の記憶装置、モバイル機器,車載機器等に用いられている。近年、さらにその用途も著しく拡大しているとともに、面記録密度も急速に向上している。 Magnetic disks or hard disks (HD) are used in personal computer (PC) storage devices, mobile devices, in-vehicle devices, and the like. In recent years, the application has been remarkably expanded and the surface recording density has been rapidly improved.

 かかる高記録密度ハードディスクの製造のため、電子ビームマスタリング技術が広範に研究されている。電子ビーム描画露光装置においては、電子銃から射出され電子レンズによって集束された電子ビームスポットがレジストを塗布した基板上に照射される。かかる電子ビームスポットは、ブランキング制御系およびビーム偏向制御系によってその照射位置が制御され、所望のビームパターンが描画される。例えば、電子ビーム露光装置としては、光ディスクなどの記録媒体の原盤を精度良く作成するための装置が開発されている。例えば、特開2002-367178号公報に記載されている。 Electron beam mastering technology has been extensively studied for manufacturing such high recording density hard disks. In an electron beam lithography exposure apparatus, an electron beam spot emitted from an electron gun and focused by an electron lens is irradiated onto a substrate coated with a resist. The irradiation position of the electron beam spot is controlled by a blanking control system and a beam deflection control system, and a desired beam pattern is drawn. For example, as an electron beam exposure apparatus, an apparatus for accurately creating a master disk of a recording medium such as an optical disk has been developed. For example, it is described in JP-A-2002-367178.

 従って、高記録密度の電子ビーム描画を行うには、高精度に電子ビームスポットの照射位置制御をなす必要がある。ハードディスクでは、光ディスク等に採用されているスパイラルパターンではなく、同心円状のパターンが用いられている。同心円状に電子ビーム描画を行う場合には、高精度に同心円状に描画することが可能で制御性に優れた電子ビーム記録装置の実現が重要である。 Therefore, in order to perform electron beam writing with high recording density, it is necessary to control the irradiation position of the electron beam spot with high accuracy. In a hard disk, a concentric pattern is used instead of a spiral pattern employed in an optical disk or the like. When electron beam writing is performed concentrically, it is important to realize an electron beam recording apparatus that can perform concentric writing with high accuracy and has excellent controllability.

 また、様々な形状のピットや任意のパターンを描画することが可能な高精度で自由度の高い制御が可能な電子ビーム記録装置の制御装置並びに制御方法が望まれている。さらに、レジスト性能に応じて精度の高いピット形状を描画可能な制御性の高い電子ビーム記録装置の制御装置並びに制御方法が望まれている。 Further, there is a demand for a control device and a control method for an electron beam recording apparatus capable of drawing pits of various shapes and arbitrary patterns and capable of high-precision and highly flexible control. Furthermore, there is a demand for a control device and a control method for an electron beam recording apparatus with high controllability capable of drawing a highly accurate pit shape according to resist performance.

 本発明が解決しようとする課題には、様々な形状のピットや任意のパターンを高精度に描画することが可能で、自由度が高く制御性に優れた電子ビーム記録装置及びその制御装置、制御方法並びにコンピュータプログラムを提供することが一例として挙げられる。 The problem to be solved by the present invention is that it is possible to draw pits and arbitrary patterns of various shapes with high precision, an electron beam recording apparatus having high flexibility and excellent controllability, its control apparatus, and control One example is to provide a method and a computer program.

 本発明による制御装置は、基板を回転及び並進させつつ電子ビームを照射して当該基板上にパターンを描画する電子ビーム記録装置の制御装置であって、
 当該電子ビームの当該基板上にパターン片を描画するための設定値を記憶する記憶部と、
当該設定値に基づいて、当該パターン片を当該電子ビームにより当該基板へ描画を行う変調信号を生成する変調信号生成器と、を有し、
 当該設定値は、複数の当該パターン片の組合せによって当該パターンが構成されるように定められていることを特徴としている。
A control device according to the present invention is a control device for an electron beam recording device that draws a pattern on a substrate by irradiating an electron beam while rotating and translating the substrate,
A storage unit for storing a setting value for drawing a pattern piece on the substrate of the electron beam;
A modulation signal generator for generating a modulation signal for drawing the pattern piece on the substrate by the electron beam based on the set value;
The set value is characterized in that it is determined so that the pattern is constituted by a combination of a plurality of the pattern pieces.

 また、本発明によるプログラムは、基板を回転及び並進させつつ電子ビームを照射して当該基板上にパターンを描画する電子ビーム記録装置の制御に用いられるコンピュータのプログラムであって、
 当該電子ビームの当該基板上にパターン片を描画するための設定値であって、複数の当該パターン片の組合せによって当該パターンが構成されるように定められている設定値を記憶する記憶ステップと、
 当該設定値に基づいて、当該パターン片を当該電子ビームにより当該基板へ描画を行う変調信号を生成する変調信号生成ステップと、を当該コンピュータに実行させることを特徴とする。
The program according to the present invention is a computer program used for controlling an electron beam recording apparatus that irradiates an electron beam while rotating and translating a substrate to draw a pattern on the substrate.
A storage step of storing a set value for drawing a pattern piece on the substrate of the electron beam, the set value being determined such that the pattern is configured by a combination of a plurality of the pattern pieces;
Based on the set value, the computer is caused to execute a modulation signal generation step for generating a modulation signal for drawing the pattern piece on the substrate by the electron beam.

 また、本発明による電子ビーム記録装置は、基板を回転及び並進させつつ電子ビームを照射して当該基板上にパターンを描画する電子ビーム記録装置であって、
 当該電子ビームの当該基板上にパターン片を描画するための設定値を記憶する記憶部と、当該設定値に基づいて、当該パターン片を当該電子ビームにより当該基板へ描画を行う変調信号を生成する変調信号生成器と、を有し、当該設定値は、複数の当該パターン片の組合せによって当該パターンが構成されるように定められている制御装置と、
 当該基板を回転駆動及び並進駆動する回転及び並進駆動部と、
 当該変調信号に応じて電子ビームのオンオフ変調を行う電子ビーム変調器と、を有することを特徴としている。
An electron beam recording apparatus according to the present invention is an electron beam recording apparatus that draws a pattern on a substrate by irradiating the electron beam while rotating and translating the substrate,
A storage unit for storing a setting value for drawing the pattern piece on the substrate of the electron beam, and a modulation signal for drawing the pattern piece on the substrate by the electron beam based on the setting value are generated. A modulation signal generator, and the setting value is determined such that the pattern is configured by a combination of a plurality of the pattern pieces;
A rotation and translation drive unit for rotating and translating the substrate; and
And an electron beam modulator that performs on / off modulation of the electron beam in accordance with the modulation signal.

図1は、本発明の実施例1である電子ビーム記録装置(EBR)の構成を模式的に示すブロック図である。FIG. 1 is a block diagram schematically showing the configuration of an electron beam recording apparatus (EBR) that is Embodiment 1 of the present invention. 図2は、図1に示すフォーマッタの構成を模式的に示すブロック図である。FIG. 2 is a block diagram schematically showing the configuration of the formatter shown in FIG. 図3は、フォーマッタの制御によってEBRが行う描画シーケンスを示す図である。FIG. 3 is a diagram showing a drawing sequence performed by the EBR by the formatter control. 図4は、本発明の実施例1であるフォーマッタの制御を示すタイムチャートである。FIG. 4 is a time chart showing the control of the formatter which is Embodiment 1 of the present invention. 図5は、基板の並進移動に対する電子ビームの偏向制御について説明する図である。FIG. 5 is a diagram for explaining the deflection control of the electron beam with respect to the translational movement of the substrate. 図6は、基板の上面図であり、スパイラル状のビーム軌跡(破線)を同心円のビーム軌跡(実線)としてラインLN1~LN4を描画するフォーマッタの偏向制御について説明する図である。FIG. 6 is a top view of the substrate, illustrating the deflection control of the formatter that draws the lines LN1 to LN4 with the spiral beam trajectory (broken line) as the concentric beam trajectory (solid line). 図7は、描画ラインLN1~LN4の各々に描画されるピット片V(j)(j=1~4)を模式的に示す図である。FIG. 7 is a diagram schematically showing pit pieces V (j) (j = 1 to 4) drawn on each of the drawing lines LN1 to LN4. 図8は、描画ラインLN(j)の各々にピット片V(j)(j=1,2,...)を描画する場合の手順を示すフローチャートである。FIG. 8 is a flowchart showing a procedure for drawing a pit piece V (j) (j = 1, 2,...) On each drawing line LN (j). 図9は、外周方向及び内周方向オフセット信号F8及びF9による描画シフトがなされる場合の、ピット片V(j)を模式的に示す図である。FIG. 9 is a diagram schematically showing the pit piece V (j) when a drawing shift is performed by the outer peripheral direction and inner peripheral direction offset signals F8 and F9. 図10は、ラジアル方向のドーズ量プロファイルの調整について模式的に示す図である。FIG. 10 is a diagram schematically showing adjustment of the dose profile in the radial direction. 図11は、タンジェンシャル方向のドーズ量プロファイルの調整について模式的に示す図である。FIG. 11 is a diagram schematically showing the adjustment of the dose profile in the tangential direction. 図12は、フォーマッタの制御によるスパイラル状のビーム軌跡を模式的に示す図である。FIG. 12 is a diagram schematically illustrating a spiral beam trajectory controlled by the formatter. 図13は、スパイラル状の描画ラインLS(j)の各々にピット片V(j)(j=1,2,3,4)が描画されていることを模式的に示す図である。FIG. 13 is a diagram schematically showing that pit pieces V (j) (j = 1, 2, 3, 4) are drawn on each of the spiral drawing lines LS (j).

発明を実施するための形態BEST MODE FOR CARRYING OUT THE INVENTION

 以下、本発明の実施例について図面を参照しつつ詳細に説明する。なお、以下に示す実施例において、等価な構成要素には同一の参照符を付している。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the following embodiments, the same reference numerals are assigned to equivalent components.

 図1は、本発明の実施例1である電子ビーム記録装置(EBR:Electron Beam Recording apparatus、以下、EBRという。)10及びEBR10を制御するEBR制御装置(フォーマッタ)50の構成を模式的に示すブロック図である。電子ビーム記録装置10は、電子ビームを用い、例えば、磁気ディスク製造用の原盤を作成するEBマスタリング装置である。なお、EBR制御装置(フォーマッタ)50はEBR10に組み込まれ、全体として電子ビーム記録装置(EBR)10として構成されていてもよい。以下においては、EBR制御装置(以下、単に「フォーマッタ」ともいう。)50及びEBR10がインターフェース回路で互いに接続されている場合を例に説明する。 FIG. 1 schematically shows a configuration of an electron beam recording apparatus (EBR: Electron Beam Recording (hereinafter referred to as EBR)) 10 and an EBR control device (formatter) 50 that controls the EBR 10 according to a first embodiment of the present invention. It is a block diagram. The electron beam recording apparatus 10 is an EB mastering apparatus that uses an electron beam to create, for example, a master for manufacturing a magnetic disk. The EBR control device (formatter) 50 may be incorporated in the EBR 10 and may be configured as an electron beam recording device (EBR) 10 as a whole. Hereinafter, a case where the EBR control device (hereinafter also simply referred to as “formatter”) 50 and the EBR 10 are connected to each other by an interface circuit will be described as an example.

 電子ビーム記録装置(EBR)10の構成
 EBR10は、真空チャンバ11、及び真空チャンバ11内に配された基板を載置及び回転、並進移動するステージ駆動装置、及び真空チャンバ11に取り付けられた電子ビームカラム20、及びステージ駆動装置の制御、電子ビーム制御等をなす種々の回路、制御系が設けられている。
A configuration EBR 10 of an electron beam recording device (EBR) 10 includes a vacuum chamber 11, a stage driving device for mounting, rotating, and translating a substrate disposed in the vacuum chamber 11, and an electron beam attached to the vacuum chamber 11. Various circuits and control systems for controlling the column 20 and the stage driving device, controlling the electron beam, and the like are provided.

 より詳細には、ディスク原盤用の基板15は、ターンテーブル16上に載置されている。なお、基板15は例えばガラス基板又はシリコン基板の上に、電子ビームによって感光するレジスト材料が塗布されている。ターンテーブル16は、基板15を回転駆動する回転駆動装置であるスピンドルモータ17によってディスク基板主面の垂直軸(Z軸)に関して回転駆動される。スピンドルモータ17は並進ステージ(以下、単にステージとも称する)18上に設けられている。ステージ18は、移送(並進駆動)装置である並進モータ19に結合され、スピンドルモータ17及びターンテーブル16を基板15の主面と平行な面内の所定方向に移動することができるようになっている。 More specifically, the substrate 15 for the master disc is placed on the turntable 16. For example, a resist material that is exposed to an electron beam is applied on a substrate 15 such as a glass substrate or a silicon substrate. The turntable 16 is rotationally driven with respect to the vertical axis (Z axis) of the main surface of the disk substrate by a spindle motor 17 which is a rotational drive device that rotationally drives the substrate 15. The spindle motor 17 is provided on a translation stage (hereinafter also simply referred to as a stage) 18. The stage 18 is coupled to a translation motor 19 which is a transfer (translation drive) device, and can move the spindle motor 17 and the turntable 16 in a predetermined direction in a plane parallel to the main surface of the substrate 15. Yes.

 基板15はターンテーブル16上に吸着保持される。ターンテーブル16は誘電体、例えば、セラミックからなり、静電チャッキング機構(図示しない)を有している。かかる静電チャッキング機構は、ターンテーブル16とターンテーブル16内に設けられ静電分極を生起させるための導体からなる電極とを備えて構成されている。当該電極には高電圧電源(図示しない)が接続されており、高電圧電源から当該電極に電圧が印加されることにより基板15を吸着保持している。 The substrate 15 is held by suction on the turntable 16. The turntable 16 is made of a dielectric, for example, ceramic, and has an electrostatic chucking mechanism (not shown). Such an electrostatic chucking mechanism includes a turntable 16 and an electrode made of a conductor provided in the turntable 16 for causing electrostatic polarization. A high voltage power source (not shown) is connected to the electrode, and the substrate 15 is held by suction by applying a voltage from the high voltage power source to the electrode.

 ステージ18上には、後述するレーザ位置測定システム35の一部である反射鏡35A、干渉計などの光学要素が配されている。 On the stage 18, optical elements such as a reflection mirror 35A and an interferometer, which are a part of a laser position measurement system 35 described later, are arranged.

 真空チャンバ11は、エアーダンパなどの防振台(図示しない)を介して設置され、外部からの振動の伝達が抑制されている。また、真空チャンバ11は、真空ポンプ(図示しない)が接続されており、これによってチャンバ内を排気することによって真空チャンバ11の内部が所定圧力の真空雰囲気となるように設定されている。 The vacuum chamber 11 is installed via an anti-vibration table (not shown) such as an air damper, and vibration transmission from the outside is suppressed. The vacuum chamber 11 is connected to a vacuum pump (not shown), and the interior of the vacuum chamber 11 is set to a vacuum atmosphere at a predetermined pressure by evacuating the chamber.

 電子ビームカラム20内には、電子ビームを射出する電子銃(エミッタ)21、収束レンズ22、ブランキング電極23、アパーチャ24、ビーム偏向コイル25、アライメントコイル26、偏向電極27、フォーカスレンズ28、対物レンズ29がこの順で配置されている。 In the electron beam column 20, an electron gun (emitter) 21 for emitting an electron beam, a converging lens 22, a blanking electrode 23, an aperture 24, a beam deflection coil 25, an alignment coil 26, a deflection electrode 27, a focus lens 28, an objective The lenses 29 are arranged in this order.

 電子銃21は、加速高圧電源(図示しない)から供給される高電圧が印加される陰極(図示しない)により数10KeVに加速された電子ビーム(EB)を射出する。収束レンズ22は、射出された電子ビームを収束する。ブランキング電極23は、ブランキング制御部31からの変調信号に基づいて電子ビームのオン/オフ切換(ON/OFF)を行う。すなわち、ブランキング電極23間に電圧を印加して通過する電子ビームを大きく偏向させることにより、電子ビームがアパーチャ24を通過するのを阻止し、基板15への電子ビームの照射をオフ状態(非照射)とすることができる。 The electron gun 21 emits an electron beam (EB) accelerated to several tens of KeV by a cathode (not shown) to which a high voltage supplied from an acceleration high-voltage power supply (not shown) is applied. The converging lens 22 converges the emitted electron beam. The blanking electrode 23 performs on / off switching (ON / OFF) of the electron beam based on the modulation signal from the blanking control unit 31. That is, by applying a voltage between the blanking electrodes 23 to greatly deflect the passing electron beam, the electron beam is prevented from passing through the aperture 24, and irradiation of the electron beam to the substrate 15 is turned off (non- Irradiation).

 アライメントコイル26は、ビーム位置補正器32からの補正信号に基づいて電子ビームの位置補正を行う。偏向電極27は、偏向制御部33からの制御信号に基づいて電子ビームを高速にラジアル方向及びタンジェンシャル方向に偏向制御することができる。また、ラジアル方向及びタンジェンシャル方向それぞれに偏向を制御する為の複数の偏向電極を有する構成にしても良い。かかる偏向制御により、基板15に対する電子ビームスポットの位置制御を行う。フォーカスレンズ28は、フォーカス制御部34からの制御信号に基づいて電子ビームのフォーカス制御を行う。 The alignment coil 26 corrects the position of the electron beam based on the correction signal from the beam position corrector 32. The deflection electrode 27 can control the deflection of the electron beam in the radial direction and the tangential direction at high speed based on the control signal from the deflection control unit 33. Further, it may be configured to have a plurality of deflection electrodes for controlling deflection in each of the radial direction and the tangential direction. With this deflection control, the position of the electron beam spot relative to the substrate 15 is controlled. The focus lens 28 performs electron beam focus control based on a control signal from the focus control unit 34.

 また、真空チャンバ11には、基板15の主面の高さを検出するための光源36A及び光検出器36Bが設けられている。光検出器36Bは、例えば、ポジションセンサやCCD(Charge Coupled Device)などを含み、光源36Aから射出され、基板15の表面で反射された光ビーム(レーザ光)を受光し、その受光信号を高さ検出部36に供給する。高さ検出部36は、受光信号に基づいて基板15の主面の高さを検出し、検出信号を生成する。基板15の主面の高さを表す検出信号は、フォーカス制御部34に供給され、フォーカス制御部34は当該検出信号に基づいて電子ビームのフォーカス調整を行う。 The vacuum chamber 11 is provided with a light source 36A and a photodetector 36B for detecting the height of the main surface of the substrate 15. The photodetector 36B includes, for example, a position sensor, a CCD (Charge Coupled Device), etc., receives a light beam (laser light) emitted from the light source 36A and reflected by the surface of the substrate 15, and increases the received light signal. This is supplied to the thickness detector 36. The height detection unit 36 detects the height of the main surface of the substrate 15 based on the light reception signal, and generates a detection signal. A detection signal indicating the height of the main surface of the substrate 15 is supplied to the focus control unit 34, and the focus control unit 34 performs focus adjustment of the electron beam based on the detection signal.

 レーザ位置測定システム35は、レーザ位置測定システム35内の光源からの測定用レーザ光を用いてステージ18までの距離を測定し、その測定データ、すなわちステージ18の位置データを並進コントローラ37に送る。 The laser position measurement system 35 measures the distance to the stage 18 using the measurement laser light from the light source in the laser position measurement system 35 and sends the measurement data, that is, the position data of the stage 18 to the translation controller 37.

 並進コントローラ37は、フォーマッタ50から供給されるリファレンス信号である並進クロック信号(T-CLK)F4に同期してXステージの並進制御を行う。また、並進コントローラ37は、レーザ位置測定システム35からのステージ位置データに基づいて並進誤差信号を生成し、ビーム位置補正器32に送出する。上記したように、この並進誤差信号に基づいてビーム位置補正器32は電子ビームの位置補正を行う。また、並進コントローラ37は、並進モータ19の制御を行う制御信号を生成して並進モータ19に供給する。 The translation controller 37 performs translation control of the X stage in synchronization with a translation clock signal (T-CLK) F4 which is a reference signal supplied from the formatter 50. The translation controller 37 generates a translation error signal based on the stage position data from the laser position measurement system 35 and sends it to the beam position corrector 32. As described above, the beam position corrector 32 corrects the position of the electron beam based on the translation error signal. The translation controller 37 generates a control signal for controlling the translation motor 19 and supplies it to the translation motor 19.

 回転コントローラ38は、フォーマッタ50から供給されるリファレンス信号である回転クロック信号(R-CLK)F5に同期してスピンドルモータ17の回転制御を行う。より詳細には、スピンドルモータ17にはロータリエンコーダ(図示しない)が設けられており、スピンドルモータ17によってターンテーブル16(すなわち、基板15)が回転される際に、回転信号を生成する。当該回転信号は、基板15の基準回転位置を表す原点信号及び基準回転位置からの所定回転角ごとのパルス信号(ロータリ・エンコーダ信号)を含んでいる。当該回転信号は、回転コントローラ38に供給される。回転コントローラ38は、当該ロータリ・エンコーダ信号によりターンテーブル16の回転誤差を検出し、該検出された回転誤差に基づいてスピンドルモータ17の回転補正を行う。 The rotation controller 38 controls the rotation of the spindle motor 17 in synchronization with a rotation clock signal (R-CLK) F5 which is a reference signal supplied from the formatter 50. More specifically, the spindle motor 17 is provided with a rotary encoder (not shown), and generates a rotation signal when the turntable 16 (that is, the substrate 15) is rotated by the spindle motor 17. The rotation signal includes an origin signal indicating the reference rotation position of the substrate 15 and a pulse signal (rotary encoder signal) for each predetermined rotation angle from the reference rotation position. The rotation signal is supplied to the rotation controller 38. The rotation controller 38 detects a rotation error of the turntable 16 based on the rotary encoder signal, and corrects the rotation of the spindle motor 17 based on the detected rotation error.

 EBRインターフェース回路(EBR I/F)39には、EBR制御装置50のフォーマッタ・インターフェース回路54を介して種々の制御信号が供給される。より具体的には、EBR制御装置50から変調信号F1及び偏向信号F3が供給される。ブランキング制御部31は変調信号F1に基づいてブランキング制御(電子ビームのオン/オフ)を行い、偏向制御部33は偏向信号F3に基づいて電子ビームの偏向制御を行う。EBR制御装置50からの制御信号及び当該制御信号に基づくEBR制御装置50の動作については以下に詳述する。 Various control signals are supplied to the EBR interface circuit (EBR I / F) 39 via the formatter interface circuit 54 of the EBR control device 50. More specifically, the modulation signal F1 and the deflection signal F3 are supplied from the EBR controller 50. The blanking control unit 31 performs blanking control (electron beam on / off) based on the modulation signal F1, and the deflection control unit 33 performs electron beam deflection control based on the deflection signal F3. The control signal from the EBR control device 50 and the operation of the EBR control device 50 based on the control signal will be described in detail below.

 フォーマッタ50の構成
 次に、EBR10の制御装置であるフォーマッタ50について、図2を参照しつつ詳細に説明する。フォーマッタ50は、EBR10を制御するための制御信号を生成するEBR制御信号生成器(プロセッサ)51と、フォーマッタ・インターフェース回路(フォーマッタ I/F)54とを有している。具体的には、制御データ生成器51により生成された制御信号、制御データなどはフォーマッタ・インターフェース回路54を介してEBR10に送出される。
Configuration of Formatter 50 Next, the formatter 50 as a control device of the EBR 10 will be described in detail with reference to FIG. The formatter 50 includes an EBR control signal generator (processor) 51 that generates a control signal for controlling the EBR 10, and a formatter interface circuit (formatter I / F) 54. Specifically, control signals, control data, and the like generated by the control data generator 51 are sent to the EBR 10 via the formatter interface circuit 54.

 また、フォーマッタ50は、後述する種々のクロック信号を生成するクロック信号生成器52が設けられている。クロック信号生成器52は、例えば、CLV(Constant Line Velocity)描画やCAV(Constant Angular Velocity)描画に応じたクロック信号を生成する。つまり、クロック信号生成器52は、後に詳述するように、スピンドルモータ17及び並進モータ19の駆動量を表す回転クロック及び並進クロック信号を生成する。 The formatter 50 is provided with a clock signal generator 52 for generating various clock signals described later. The clock signal generator 52 generates a clock signal corresponding to, for example, CLV (Constant Line Velocity) drawing or CAV (Constant Angular Velocity) drawing. That is, as will be described in detail later, the clock signal generator 52 generates a rotation clock and a translation clock signal representing the driving amounts of the spindle motor 17 and the translation motor 19.

 また、フォーマッタ50は、後述する種々の制御信号に関する設定値やデータを格納するメモリ53、EBR10の制御のために用いられる設定値などを入力するための入出力部55を有している。さらに、フォーマッタ50には、EBR10及びフォーマッタ50の動作条件、動作状態、設定値などを表示するための表示部56が設けられている。 The formatter 50 also has a memory 53 for storing setting values and data related to various control signals described later, and an input / output unit 55 for inputting setting values used for controlling the EBR 10. Further, the formatter 50 is provided with a display unit 56 for displaying the operating conditions, operating states, setting values, and the like of the EBR 10 and the formatter 50.

 フォーマッタ・インターフェース回路(フォーマッタ I/F)54とEBR10に設けられたEBRインターフェース回路(EBR I/F)39との間で、EBR10を制御するために用いられる種々の制御信号(インターフェース信号)及びそれらの説明は以下の通りである。
[F1-変調信号(F1-Modulation(/Blanking))]:以下、変調信号F1ともいう。
Various control signals (interface signals) used to control the EBR 10 between the formatter interface circuit (formatter I / F) 54 and the EBR interface circuit (EBR I / F) 39 provided in the EBR 10 Is described as follows.
[F1-Modulation (/ Blanking)]: hereinafter also referred to as modulation signal F1.

 電子ビームをオン/オフするためにフォーマッタが出力する信号。例えば、”Low”のとき電子ビームはブランキングされ、電子ビームはオフとされる。
[F3-鋸歯状波偏向信号(F3-Saw-Tooth-Deflection-X]:以下、鋸歯状偏向信号F3又は単に偏向信号F3ともいう。
A signal output by the formatter to turn the electron beam on and off. For example, when “Low”, the electron beam is blanked and the electron beam is turned off.
[F3-Saw-Tooth-Deflection-X]: hereinafter also referred to as a saw-tooth deflection signal F3 or simply a deflection signal F3.

 スパイラルを同心円とするための偏向信号。Xステージの移動方向によりランプ波の極性反転が必要である。
[F4-並進クロック信号(F4-Translation-clock)]:以下、並進クロック信号F4又は、単に並進クロックF4ともいう。
A deflection signal for concentric spirals. The polarity of the ramp wave needs to be reversed depending on the moving direction of the X stage.
[F4-translation clock signal (F4-Translation-clock)]: hereinafter also referred to as a translation clock signal F4 or simply a translation clock F4.

 フォーマッタが出力するXステージのへのリファレンス信号。EBR装置はこの信号に同期して並進ステージ(Xステージ)を駆動する。パルスの基準単位(ΔX)をフォーマッタ側で設定可能とする。デフォルト値としては、例えば、632.991345/1024nm。また、ΔX/2,ΔX/4,ΔX/8等も設定可能とする。
[F5-回転クロック信号(F5-Rotation-clock)]:以下、回転クロック信号F5ともいう。
Reference signal to the X stage output by the formatter. The EBR apparatus drives the translation stage (X stage) in synchronization with this signal. The pulse reference unit (ΔX) can be set on the formatter side. As a default value, for example, 632.991345 / 1024 nm. Also, ΔX / 2, ΔX / 4, ΔX / 8, etc. can be set.
[F5-rotation clock signal (F5-Rotation-clock)]: hereinafter also referred to as a rotation clock signal F5.

 フォーマッタが出力する回転スピンドルへのリファレンス信号。デフォルトは、例えば、3600pulse/rev。デューティは、例えば、50%。
[F6-開始信号(F6-/Start)]:以下、描画開始信号F6、又は、単に開始信号F6ともいう。
Reference signal to the rotating spindle output by the formatter. The default is, for example, 3600 pulse / rev. For example, the duty is 50%.
[F6-Start signal (F6- / Start)]: Hereinafter, it is also referred to as a drawing start signal F6 or simply a start signal F6.

 描画終了信号F7(下記)が”High”で並進クロック信号F4及び回転クロック信号F5が有効になった後に、EBR装置側がこれらのクロックに同期し、描画開始半径になった時点でEBR装置側が描画開始信号F6を”Low”とする。これにより、フォーマッタが描画(信号出力)を開始する。
[F7-終了信号(F7-End)]:以下、描画終了信号F7、又は、単に終了信号F7ともいう。
After the drawing end signal F7 (below) is "High" and the translation clock signal F4 and the rotation clock signal F5 are enabled, the EBR device side is synchronized with these clocks, and when the drawing start radius is reached, the EBR device side draws. The start signal F6 is set to “Low”. As a result, the formatter starts drawing (signal output).
[F7-End signal (F7-End)]: Hereinafter, it is also referred to as a drawing end signal F7 or simply an end signal F7.

 フォーマッタが描画(信号出力)の終了を”High”でEBR装置に通知する。並進クロック信号F4及び回転クロック信号F5が有効な期間は”Low”とする。この信号を受けてEBR装置は描画開始信号F6を”High”として、現在のジョブの描画を終了する。
[F8-ビーム外周方向オフセット信号(F8-BeamOffsetOut)]:以下、外周方向オフセット信号F8、又は高速オフセット(+)信号F8ともいう。
The formatter notifies the EBR device of the end of drawing (signal output) with “High”. The period during which the translation clock signal F4 and the rotation clock signal F5 are valid is "Low". Upon receiving this signal, the EBR apparatus sets the drawing start signal F6 to “High” and finishes drawing the current job.
[F8-Beam Outer Direction Offset Signal (F8-BeamOffsetOut)]: Hereinafter also referred to as an outer periphery direction offset signal F8 or a high speed offset (+) signal F8.

 高速でビームを外周へオフセットさせる信号。
[F9-ビーム内周方向オフセット信号(F8-BeamOffsetOut)]:以下、内周方向オフセット信号F9、又は、高速オフセット(-)信号F9ともいう。
A signal that offsets the beam to the outer periphery at high speed.
[F9-Beam inner direction offset signal (F8-BeamOffsetOut)]: Hereinafter also referred to as an inner periphery direction offset signal F9 or a high-speed offset (-) signal F9.

 高速でビームを内周へオフセットさせる信号。
[F16-ビーム・タンジェンシャル方向偏向信号(F16-BeamTangentialDeflection)]:以下、タンジェンシャル偏向信号F16ともいう。
A signal that offsets the beam to the inner circumference at high speed.
[F16-Beam / Tangential Deflection Signal (F16-BeamTangentialDeflection)]: Hereinafter also referred to as a tangential deflection signal F16.

 高速でビームをタンジェンシャル方向又は円周方向(+θ,-θ方向)へ偏向する信号。 Signal that deflects the beam at high speed in the tangential direction or circumferential direction (+ θ, -θ direction).

 以上が、主なインターフェース信号であるが、上記した数値、論理レベル(”High”,”Low”)などは例示に過ぎない。適宜、設定・変更することができる。 The above are the main interface signals, but the above numerical values, logic levels (“High”, “Low”), etc. are merely examples. It can be set and changed as appropriate.

 EBR10及びフォーマッタ50の動作
 次に、EBR10及びフォーマッタ50の動作について説明する。図3は、フォーマッタ50の制御によってEBR10が行う描画シーケンスを示す図である。
Operations of EBR 10 and Formatter 50 Next, operations of the EBR 10 and the formatter 50 will be described. FIG. 3 is a diagram showing a drawing sequence performed by the EBR 10 under the control of the formatter 50.

 描画のためのジョブを開始するに先立って、フォーマッタ50は、描画終了信号F7(F7-End)を”Low”とすると共に、並進クロック信号F4及び回転クロック信号F5を出力する(図3、時刻Tp)。なお、この際の並進クロック信号F4及び回転クロック信号F5は描画ジョブ開始時の周波数(Fini)のクロック信号である。 Prior to starting the job for drawing, the formatter 50 sets the drawing end signal F7 (F7-End) to “Low” and outputs the translation clock signal F4 and the rotation clock signal F5 (FIG. 3, time). Tp). At this time, the translation clock signal F4 and the rotation clock signal F5 are clock signals having a frequency (Fini) at the start of the drawing job.

 上記した並進クロック信号F4及び回転クロック信号F5が有効(信号出力)となった後に、EBR10がこれらのクロックに同期して動作し、描画開始半径になった時点でEBR10が描画開始信号F6(F6-/Start)を”Low”(アクティブ)とする。 After the translation clock signal F4 and the rotation clock signal F5 become effective (signal output), the EBR 10 operates in synchronization with these clocks, and when the drawing start radius is reached, the EBR 10 outputs the drawing start signal F6 (F6). -/ Start) is set to “Low” (active).

 フォーマッタ50は、開始信号F6がアクティブとなったことに応答して描画を開始する。すなわち、描画信号である変調信号F1の出力を開始する(図3、時刻Tini)。 The formatter 50 starts drawing in response to the start signal F6 becoming active. That is, output of the modulation signal F1, which is a drawing signal, is started (FIG. 3, time Tini).

 図4は、本発明の実施例1であるフォーマッタ50の制御を示すタイムチャートである。本実施例において、フォーマッタ50の制御によって、EBR10は同心円状のラインを描画するが、複数のラインを1トラックとしてデータの描画を行う。なお、EBR10が同心円状のラインを描画する場合を例に説明するが、同心円状のラインを描画する場合に限らず、後に詳述するように、種々のビーム軌跡で描画を行う場合、例えば、スパイラル状(螺旋状)にラインを描画する場合についても、下記に述べるフォーマッタ50の制御を容易に改変し、適用することができる。 FIG. 4 is a time chart showing the control of the formatter 50 which is Embodiment 1 of the present invention. In this embodiment, under the control of the formatter 50, the EBR 10 draws concentric lines, but draws data with a plurality of lines as one track. Note that the case where the EBR 10 draws concentric lines will be described as an example. However, the drawing is not limited to the case where the EBR 10 draws concentric lines. Also in the case of drawing a line in a spiral shape (spiral shape), the control of the formatter 50 described below can be easily modified and applied.

 以下に、フォーマッタ50の制御によって、EBR10が4ラインを1トラック(NLN回=4、NLN:1トラックのライン数)として描画を行う場合を例に説明する。 In the following, an example will be described in which the EBR 10 performs rendering with four lines as one track (N LN times = 4, N LN : number of lines of one track) under the control of the formatter 50.

 フォーマッタ50は、並進クロック(T-CLK)F4を出力するとともに回転クロック(T-CLK)F5を出力する。また、フォーマッタ50は、偏向信号F3(第1偏向信号)を出力する。第1偏向信号F3(以下、単に、偏向信号F3という。)は鋸歯状信号(アナログ電圧信号)であって、基板15が1回回転する間(Tini ~T1)、基準電圧(V=Vref=0volt)からV=VDまで線形に変化する。時刻T1において偏向信号F3は基準電圧Vref(=0volt)に戻され、電子ビームは基準偏向位置(例えば、基板15に対して垂直位置)に戻される。 The formatter 50 outputs a translation clock (T-CLK) F4 and a rotation clock (T-CLK) F5. The formatter 50 outputs a deflection signal F3 (first deflection signal). The first deflection signal F3 (hereinafter simply referred to as the deflection signal F3) is a sawtooth signal (analog voltage signal), and the reference voltage (V = Vref =) while the substrate 15 rotates once (Tini -T1). 0 volt) to V = VD. At time T1, the deflection signal F3 is returned to the reference voltage Vref (= 0 volt), and the electron beam is returned to the reference deflection position (for example, a position perpendicular to the substrate 15).

 図5に示すように、並進クロック(T-CLK)F4によって一定速度で基板15は並進する。より詳細には、基板15は、描画開始時の位置(破線で示す、基板中心をOで示す)から1回転終了時の位置(実線で示す、基板中心をO’で示す)までX方向に並進する。この際、電子ビームEBは、偏向信号F3によって基板15を追従するようにビーム偏向がなされる。つまり、図6に示すように、電子ビームEBの偏向(すなわち、射出方向)が固定されている場合には、基板15上でスパイラル状のビーム軌跡(破線で示す)となるが、フォーマッタ50の制御(偏向信号F3)によって、EBR10は、同心円のラインLN1(実線で示す)を描画する。なお、以下においては、ライン番号j(すなわち、LN=j)の同心円のラインをLNjのように表記して説明する。 As shown in FIG. 5, the substrate 15 is translated at a constant speed by a translation clock (T-CLK) F4. More specifically, the substrate 15 extends in the X direction from the position at the start of drawing (indicated by a broken line, the center of the substrate is indicated by O) to the position at the end of one rotation (indicated by a solid line, the center of the substrate is indicated by O ′) Translate. At this time, the electron beam EB is deflected so as to follow the substrate 15 by the deflection signal F3. That is, as shown in FIG. 6, when the deflection (that is, the emission direction) of the electron beam EB is fixed, a spiral beam locus (indicated by a broken line) is formed on the substrate 15. By control (deflection signal F3), the EBR 10 draws a concentric line LN1 (shown by a solid line). In the following description, a concentric line having a line number j (ie, LN = j) is described as LNj.

 当該第ラインLN1の描画の終了と同時に(T=T1)、偏向信号F3によって偏向電圧は基準電圧(V=Vref=0volt、図4)に戻される。すなわち、電子ビームはラインLN1の描画開始時の偏向位置(基準偏向位置)に戻され、電子ビームEBのビームスポットは基板15の中心に関してラインLN1の描画終了時の角度位置と同一の角度位置に戻される。一方、この時点において、基板15上のビームスポットの基板15の中心に関する半径位置(ラジアル位置)は、ラインLN1の描画に要した並進距離だけ移動している。図7に示すように、かかる距離がライン間のピッチq(ラインピッチという。)になる。 At the same time when the drawing of the second line LN1 is completed (T = T1), the deflection voltage is returned to the reference voltage (V = Vref = 0 volt, FIG. 4) by the deflection signal F3. That is, the electron beam is returned to the deflection position (reference deflection position) at the start of drawing of the line LN1, and the beam spot of the electron beam EB is at the same angular position as the angular position at the end of drawing of the line LN1 with respect to the center of the substrate 15. Returned. On the other hand, at this time, the radial position (radial position) of the beam spot on the substrate 15 with respect to the center of the substrate 15 has moved by the translational distance required for drawing the line LN1. As shown in FIG. 7, this distance becomes a pitch q between lines (referred to as a line pitch).

 そして、基板15の第2回転~第4回転(REV=2~4)において、フォーマッタ50の制御により、上記したのと同様な制御が繰り返し実行され、ラインピッチqだけ互いに離れた同心円の第1ラインLN1~第4ラインLN4の描画が実行される(図6,7)。なお、図6においては、図の説明上、ラインピッチを拡大して示している。また、図7は、描画ラインLN1~LN4の各々に描画されるピット片V(j)(j=1~4)を模式的に示している。なお、本実施例におけるピットWは描画パターンの一形態であり、ピットに限らず様様な形状のパターンを描くことが出来る。 Then, in the second to fourth rotations (REV = 2 to 4) of the substrate 15, the same control as described above is repeatedly executed by the control of the formatter 50, and the first concentric circles separated from each other by the line pitch q. Drawing of the line LN1 to the fourth line LN4 is executed (FIGS. 6 and 7). In FIG. 6, the line pitch is enlarged for the sake of explanation. FIG. 7 schematically shows the pit pieces V (j) (j = 1 to 4) drawn on each of the drawing lines LN1 to LN4. Note that the pit W in the present embodiment is one form of a drawing pattern, and a pattern having various shapes can be drawn without being limited to the pit.

 描画ラインLN1~LN4の描画(ライン数NLN=4)によってラインLN1~LN4を1つのトラックとしてピットWの列(ピットシーケンスWW)が描画されることになる。 By drawing the drawing lines LN1 to LN4 (number of lines N LN = 4), a line of pits W (pit sequence WW) is drawn using the lines LN1 to LN4 as one track.

 つまり、電子ビームのプロファイルは広がり(一般的には、ガウシアン形状)を有し、また、照射ビームの前方及び後方散乱によってドーズ量プロファイル(ドーズ量分布)は変化する。本実施例においては、フォーマッタ50は、描画ラインの隣接する描画ライン間の間隔は各ラインのドーズ量プロファイルがオーバーラップするように制御する。従って、ラインLN1~LN4の描画(ビーム照射)によるドーズ量プロファイルはこれらの合成されたものとなる。 That is, the profile of the electron beam has a spread (generally, a Gaussian shape), and the dose profile (dose distribution) varies depending on the forward and back scattering of the irradiation beam. In the present embodiment, the formatter 50 controls the interval between drawing lines adjacent to each other so that the dose profile of each line overlaps. Accordingly, the dose amount profile by drawing (beam irradiation) of the lines LN1 to LN4 is a combination of these.

 従って、描画ラインLN1~LN4の各々にピット片(パターン片)の列(ピット片シーケンス)を描画することによって、これらの描画されたピット片の合成(組合せ)によってピットシーケンスWWが描画される。 Therefore, by drawing a sequence (pit piece sequence) of pit pieces (pattern pieces) on each of the drawing lines LN1 to LN4, a pit sequence WW is drawn by combining (combining) these drawn pit pieces.

 次に、図面を参照して、フォーマッタ50によって、描画ラインLN(j)上にピット片V(j)を描画し、複数のピット片V(j)(jはライン番号、j=1,2,...)により任意の形状のピットWを構成する制御、当該ピットWの列(ピットシーケンス)からなるピットパターンWWを描画する制御について詳細に説明する。 Next, referring to the drawing, a pit piece V (j) is drawn on a drawing line LN (j) by a formatter 50, and a plurality of pit pieces V (j) (j is a line number, j = 1, 2). ,...) Will be described in detail with respect to control for forming a pit W having an arbitrary shape and control for drawing a pit pattern WW composed of a row (pit sequence) of the pit W.

 図8は、描画ラインLN(j)の各々にピット片V(j)(j=1,2,...)を描画する場合の手順を示すフローチャートである。なお、以下においては、描画ラインLN1~LN4(j=1~4)の各々上にピット片V(1)~V(4)を描画する場合を例に説明する。ピット片V(1)~V(4)によって任意形状のピットWを形成することができる。 FIG. 8 is a flowchart showing a procedure for drawing a pit piece V (j) (j = 1, 2,...) On each drawing line LN (j). In the following description, an example in which pit pieces V (1) to V (4) are drawn on each of the drawing lines LN1 to LN4 (j = 1 to 4) will be described. A pit W having an arbitrary shape can be formed by the pit pieces V (1) to V (4).

 まず、フォーマッタ50は、電子ビームの照射位置が基板15上の描画開始ライン(LN1,すなわち、j=1)上の描画開始位置に到達したか否かを判別する(ステップS11)。描画開始位置に到達したと判別された場合、フォーマッタ50は、描画データに基づいて当該ラインに描画すべき描画パターン(以下、ライン描画パターンともいう。)を生成、出力し、描画を行う(ステップS12)。ここで、当該ライン描画パターンは描画ラインLN1に描画すべきピット片V(1)の列(ピット片シーケンス)であって、ラインLN1の当該ピット片シーケンスは、例えば、k1個のピット片V(1,k1)からなる。そして、k1=1の場合は連続してラインLN1上に描画(ビーム照射)することを示し、k1=0の場合はラインLN1上には描画(ビーム照射)をしないことを示している。また、ラインLN1~LN4にはそれぞれk1~k4個のピット片V(j,kj)からなるピット片シーケンスVQ(j)が描画される。 First, the formatter 50 determines whether or not the irradiation position of the electron beam has reached the drawing start position on the drawing start line (LN1, i.e., j = 1) on the substrate 15 (step S11). If it is determined that the drawing start position has been reached, the formatter 50 generates and outputs a drawing pattern (hereinafter also referred to as a line drawing pattern) to be drawn on the line based on the drawing data, and performs drawing (step). S12). Here, the line drawing pattern is a row (pit piece sequence) of pit pieces V (1) to be drawn on the drawing line LN1, and the pit piece sequence of the line LN1 is, for example, k1 pit pieces V ( 1, k1). When k1 = 1, it indicates that drawing (beam irradiation) is continuously performed on the line LN1, and when k1 = 0, it indicates that drawing (beam irradiation) is not performed on the line LN1. In addition, a pit piece sequence VQ (j) including k1 to k4 pit pieces V (j, kj) is drawn on the lines LN1 to LN4, respectively.

 本実施例においては、ラインLN1~LN4上に描画されるピット片シーケンスVQ(1)~VQ(4)のうち、ラインLN1~LN4上の同一の半径位置(r)にそれぞれピット片V(1)~V(4)を描画する場合を例に説明する。(図7,9)
 図9に示すように、フォーマッタ50は、ラインLN1上におけるピット片V(1)のピット片描画開始点(以下、単に描画開始点という。)VS(1)からピット片描画終了点(以下、単に描画終了点という。)VE(1)まで描画(ビーム照射)を行う。これにより、ピット片V(1)の描画が行われる。なお、描画開始位置及び描画終了点、あるいは、後述するピット片描画長さの設定値はメモリ53、あるいは、EBR制御信号生成器(プロセッサ)51に設けられた記憶部に記憶されている。なお、メモリ53には、例えばディスクリートトラックメディアやビットパターンドメディアなどのハードディスクの描画パターンデータ(同心円状パターン、トラックエリアのパターン、サーボエリアのパターンなど)が記録されている。プロセッサー51は、この描画パターンデータを用いてEBR10の制御信号を生成する。
In the present embodiment, among the pit piece sequences VQ (1) to VQ (4) drawn on the lines LN1 to LN4, the pit pieces V (1) are respectively placed at the same radial position (r) on the lines LN1 to LN4. ) To V (4) will be described as an example. (Figs. 7 and 9)
As shown in FIG. 9, the formatter 50 includes a pit piece drawing end point (hereinafter referred to as “drawing start point”) VS (1) from the pit piece drawing start point (hereinafter simply referred to as drawing start point) of the pit piece V (1) on the line LN1. This is simply referred to as a drawing end point.) Drawing (beam irradiation) is performed up to VE (1). Thereby, drawing of the pit piece V (1) is performed. Note that the drawing start position and the drawing end point, or set values of the pit piece drawing length described later are stored in the memory 53 or a storage unit provided in the EBR control signal generator (processor) 51. The memory 53 stores hard disk drawing pattern data (such as concentric circular patterns, track area patterns, servo area patterns, etc.) such as discrete track media and bit patterned media. The processor 51 generates a control signal for the EBR 10 using the drawing pattern data.

 なお、図4に示すように、ラインLN1の描画においては半径方向へのビームシフト信号(第2偏向信号)である外周方向及び内周方向オフセット信号F8及びF9は出力されず、ビームの高速シフト量はゼロである。従って、ラインLN1からのシフト無しに当該ラインのピット片シーケンスVQ(1)の描画がなされる。 As shown in FIG. 4, in the drawing of the line LN1, the outer peripheral direction and inner peripheral direction offset signals F8 and F9 which are beam shift signals (second deflection signals) in the radial direction are not output, and the beam is shifted at high speed. The amount is zero. Therefore, the pit piece sequence VQ (1) of the line is drawn without shifting from the line LN1.

 このように、ラインLN1上にピット片シーケンスVQ(1)を描画し、ラインLN1の描画を終了したと判別された場合(ステップS13)、フォーマッタ50は、ライン番号jをインクリメントする(ステップS14)。次に、描画パターンWWの描画が終了したか否かが判別される(ステップS15)が、描画すべきライン番号はj=2であるので、ステップS12に移行する。 As described above, when it is determined that the pit piece sequence VQ (1) is drawn on the line LN1 and the drawing of the line LN1 is finished (step S13), the formatter 50 increments the line number j (step S14). . Next, it is determined whether or not the drawing pattern WW has been drawn (step S15). Since the line number to be drawn is j = 2, the process proceeds to step S12.

 ラインLN2について上記ステップS12~ステップS15が実行され、ラインLN2上にピット片シーケンスVQ(2)が描画される。なお、図4に示すように、ラインLN2の描画においては外周方向オフセット信号F8によって外周方向にビームが偏向(+シフト)され、描画がなされる(図9)。ピット片V(2)についてもピット片V(1)の場合と同様に、描画開始点VS(2)からピット片描画終了点VE(2)まで描画がなされ、ピット片V(2)の描画が行われる。 The above steps S12 to S15 are executed for the line LN2, and the pit piece sequence VQ (2) is drawn on the line LN2. As shown in FIG. 4, in the drawing of the line LN2, the beam is deflected (+ shifted) in the outer peripheral direction by the outer peripheral direction offset signal F8, and drawing is performed (FIG. 9). Similarly to the pit piece V (1), the pit piece V (2) is drawn from the drawing start point VS (2) to the pit piece drawing end point VE (2), and the pit piece V (2) is drawn. Is done.

 描画ラインLN3については、内周方向オフセット信号F9によって内周にビームが偏向(-シフト)された状態で、描画開始点VS(3)からピット片描画終了点VE(3)まで描画がなされ、ピット片V(3)の描画が行われる(図9)。また、描画ラインLN4については、外周方向及び内周方向オフセット信号F8、F9によるビームの偏向はなされず、描画開始点VS(4)からピット片描画終了点VE(4)まで描画がなされ、ピット片V(4)の描画が行われる(図9)。 The drawing line LN3 is drawn from the drawing start point VS (3) to the pit piece drawing end point VE (3) in a state where the beam is deflected (−shifted) to the inner circumference by the inner circumference direction offset signal F9. Drawing of the pit piece V (3) is performed (FIG. 9). The drawing line LN4 is not deflected by the outer and inner circumferential offset signals F8 and F9, but is drawn from the drawing start point VS (4) to the pit piece drawing end point VE (4). Drawing of the piece V (4) is performed (FIG. 9).

 描画ラインLN4の描画終了により、描画パターンWWの描画が終了したと判別され(ステップS15)、本制御を終了する(図8)。 When it is determined that the drawing line LN4 has been drawn, it is determined that drawing of the drawing pattern WW has ended (step S15), and this control is ended (FIG. 8).

 描画が完了した基板15は、現像工程、エッチング工程を経てハードディスク用のモールド(スタンパ)に加工される。 The substrate 15 on which drawing has been completed is processed into a hard disk mold (stamper) through a development process and an etching process.

 上記したように、ピット片V(1)~V(4)の合成によって任意形状のピットWを形成することができる。より詳細には、ピット片V(1)~V(4)の描画の重なり、又は描画(ビーム照射)におけるビーム強度に応じてドーズ量プロファイルは変化する。つまり、電子ビームのプロファイルは広がり(一般的には、ガウシアン形状)を有し、また、照射ビームの前方及び後方散乱によってドーズ量プロファイルは変化する。従って、実際のピットWの形状(ドーズ量プロファイル)はこれらの合成となる。より具体的には、図10に示すように、ピット片V(1)~V(4)の描画によって、ラジアル方向のドーズ量のプロファイルを調整することができる。例えば、プロファイルR-Aのようにラジアル方向の中央部を増強する、あるいは、プロファイルR-Bのようにラジアル方向のエッジ部を増強することができる。 As described above, an arbitrarily shaped pit W can be formed by synthesizing the pit pieces V (1) to V (4). More specifically, the dose profile changes according to the overlapping of drawing of the pit pieces V (1) to V (4) or the beam intensity in drawing (beam irradiation). That is, the profile of the electron beam is broad (generally a Gaussian shape), and the dose profile changes depending on the forward and back scattering of the irradiation beam. Accordingly, the actual shape of the pit W (dose amount profile) is a combination of these. More specifically, as shown in FIG. 10, the dose profile in the radial direction can be adjusted by drawing the pit pieces V (1) to V (4). For example, the central portion in the radial direction can be strengthened as in the profile RA, or the edge portion in the radial direction can be strengthened as in the profile RB.

 あるいは、フォーマッタ50はタンジェンシャル偏向信号F16(第3偏向信号)を出力し、ピット片V(j)を描画する際に高速でビームを接線方向又は円周方向(+θ,-θ方向)に偏向することで、タンジェンシャル方向又は円周方向のドーズ量のプロファイルを調整することができる。図11に示すように、例えば、プロファイルT-Aのようにタンジェンシャル方向の中央部を増強したり、あるいは、プロファイルT-Bのようにタンジェンシャル方向のエッジ部を増強することができる。 Alternatively, the formatter 50 outputs a tangential deflection signal F16 (third deflection signal) and deflects the beam in a tangential direction or a circumferential direction (+ θ, −θ direction) at a high speed when drawing the pit piece V (j). Thus, the dose profile in the tangential direction or the circumferential direction can be adjusted. As shown in FIG. 11, for example, the central portion in the tangential direction can be strengthened as in the profile TA, or the edge portion in the tangential direction can be strengthened as in the profile TB.

 なお、外周方向及び内周方向へのオフセット量(オフセット信号F8、F9)は任意に設定可能であり、フォーマッタ50は、入力された重なり度合いに応じてオフセット量を調整する機能を有する。 The offset amounts (offset signals F8 and F9) in the outer circumferential direction and the inner circumferential direction can be arbitrarily set, and the formatter 50 has a function of adjusting the offset amount according to the input overlapping degree.

 従って、ラジアル方向及び/又はタンジェンシャル方向におけるドーズ量のプロファイルを調整することによって、レジスト性能に応じた精度の高いピット形状を描画可能であり、かつ制御性の高い描画を行うことができる。また、任意の描画ピットパターンやピット形状等の描画を行うことができる。 Therefore, by adjusting the dose profile in the radial direction and / or tangential direction, it is possible to draw a pit shape with high accuracy according to the resist performance and to perform drawing with high controllability. In addition, it is possible to draw an arbitrary drawing pit pattern, pit shape, and the like.

 フォーマッタ50の機能
 フォーマッタ50は、上記した任意形状の描画パターンを基板15上に形成するために上記した制御信号F1~F16を生成し、出力する。フォーマッタ50は、描画パターンを定義する描画定義情報データ(以下、定義情報という。)に基づいて、描画の重ね書き回数、描画ラインの重ね書きの程度(半径方向のビーム偏向量)等の制御量を算出し、当該制御量を表す制御信号を生成する。
Function of the formatter 50 The formatter 50 generates and outputs the control signals F1 to F16 described above in order to form the drawing pattern of the arbitrary shape described above on the substrate 15. The formatter 50 controls the amount of drawing overwriting, the degree of overwriting of drawing lines (radial beam deflection amount) and the like based on drawing definition information data (hereinafter referred to as definition information) that defines a drawing pattern. And a control signal representing the control amount is generated.

 より詳細には、描画モード(CLV,CAV等)、任意の重ね書き回数、ビーム照射の半径及び角度位置等の描画位置(ディスクのトラック、セクタ等)に応じて、(1)並進クロック信号F4、回転クロック信号F5、偏向信号F3を生成し、出力する。また、基板15に描画すべきピットパターン(ピットシーケンス)やピット形状に応じて、各描画ライン毎に、(2)外周方向及び内周方向オフセット信号F8,F9、(3)タンジェンシャル方向又は円周方向のドーズ量プロファイルの調整(タンジェンシャル偏向信号F16)を行う。 More specifically, according to the drawing mode (CLV, CAV, etc.), arbitrary number of overwriting times, drawing position (disk track, sector, etc.) such as the beam irradiation radius and angular position, (1) translation clock signal F4 The rotation clock signal F5 and the deflection signal F3 are generated and output. Further, according to the pit pattern (pit sequence) and pit shape to be drawn on the substrate 15, for each drawing line, (2) outer peripheral direction and inner peripheral direction offset signals F8, F9, (3) tangential direction or circle Adjustment of the dose profile in the circumferential direction (tangential deflection signal F16) is performed.

 すなわち、フォーマッタ50は、描画モードや、重ね書き回数、各ラインの描画の重なり度合い、描画ピットパターン(ピットシーケンス)や個々のピット形状等の描画定義情報が、例えば入出力部から入力されれば、当該定義情報に基づいて、上記制御信号を自動で生成する。例えば、フォーマッタ50のEBR制御信号生成器(プロセッサ)51は、描画ピットパターンやピット形状等の描画定義情報を描画ラインの各々について、ピット片ごとの外周方向及び内周方向オフセット量、タンジェンシャル方向の偏向等に変換するための変換テーブルを予め有しており、当該変換テーブルに基づいて上記した制御信号を自動で生成する。 That is, the formatter 50 receives drawing definition information such as a drawing mode, the number of overwriting, the degree of overlapping of drawing of each line, a drawing pit pattern (pit sequence) and individual pit shapes, for example, from the input / output unit. The control signal is automatically generated based on the definition information. For example, the EBR control signal generator (processor) 51 of the formatter 50 displays drawing definition information such as a drawing pit pattern and pit shape for each drawing line in the outer peripheral direction and inner peripheral direction offset amount for each pit piece, and in the tangential direction. A conversion table for converting to the above-described deflection or the like is provided in advance, and the control signal described above is automatically generated based on the conversion table.

 上記したフォーマッタ50による制御はコンピュータプログラムとして実現することも可能である。すなわち、上記した制御信号である変調信号F1、偏向信号F3、タンジェンシャル偏向信号F16、並進クロック信号F4、回転クロック信号F5、描画開始信号F6、描画終了信号F7等を重ね書き回数、描画ピットパターンやピット形状等の描画設定に基づいて生成する指定あるいは指令を含むコンピュータプログラムを用いることができる。そして、当該コンピュータプログラムをプロセッサによって実行し、上記制御信号を生成して電子ビーム記録装置を制御することができる。 The control by the formatter 50 described above can also be realized as a computer program. That is, the modulation signal F1, the deflection signal F3, the tangential deflection signal F16, the translation clock signal F4, the rotation clock signal F5, the drawing start signal F6, the drawing end signal F7, etc., which are the above control signals, are overwritten, the drawing pit pattern. Or a computer program including a designation or command generated based on drawing settings such as a pit shape or the like. The computer program can be executed by a processor to generate the control signal to control the electron beam recording apparatus.

 上記した実施例1においては、EBR10が同心円状のラインを描画する場合を例に説明したが、種々のビーム軌跡上にピット片、ピットを描画する場合についても、上記したフォーマッタ50の制御を容易に改変し、適用することが可能である。 In the first embodiment, the case where the EBR 10 draws concentric lines has been described as an example. However, the above-described formatter 50 can be easily controlled even when pit pieces and pits are drawn on various beam trajectories. Can be modified and applied.

 例えば、スパイラル状(螺旋状)にラインを描画する場合についても、上記したフォーマッタ50の制御を適用することが可能である。この場合、フォーマッタ50は、トラックがスパイラル状になるように並進クロック信号F4、回転クロック信号F5、偏向信号F3を生成する。 For example, the above-described control of the formatter 50 can be applied to a case where a line is drawn in a spiral shape (spiral shape). In this case, the formatter 50 generates the translation clock signal F4, the rotation clock signal F5, and the deflection signal F3 so that the track is spiral.

 より詳細には、基板15が並進クロック(T-CLK)F4によって並進する場合、電子ビームEBの偏向(すなわち、射出方向)を固定することによって、基板15上でのビーム軌跡がスパイラル状(破線で示す)となる。例えば、実施例1においては、電子ビームEBが基板15を追従するように偏向信号F3によってビーム偏向がなされることについて説明したが、図3に示した描画シーケンスにおいて偏向信号F3を描画中において一定とすることによって、ビーム偏向を固定することができる。すなわち、スパイラル状に描画を行うことができる。あるいは、当該偏向信号(追従偏向信号)を印加しない又は用いないことによっても、ビーム方向は固定されるので、スパイラル状に描画を行うことができる。 More specifically, when the substrate 15 is translated by the translation clock (T-CLK) F4, the beam trajectory on the substrate 15 is spiral (broken line) by fixing the deflection (that is, the emission direction) of the electron beam EB. Is shown). For example, in the first embodiment, it has been described that the beam deflection is performed by the deflection signal F3 so that the electron beam EB follows the substrate 15. However, the deflection signal F3 is constant during drawing in the drawing sequence shown in FIG. Thus, the beam deflection can be fixed. That is, drawing can be performed in a spiral shape. Alternatively, the beam direction is fixed by not applying or using the deflection signal (following deflection signal), so that drawing can be performed in a spiral shape.

 図12は、かかるフォーマッタ50の制御によるスパイラル状のビーム軌跡を模式的に示している。なお、以下においては、基板15のj回転~(j+3)回転(本実施例では、j=1とする。)における1回転ごとに形成されるスパイラル状のビーム軌跡(ライン)LSをライン番号j(すなわち、LS=j)として、LSj又はLS(j)のように表記して説明する。 FIG. 12 schematically shows a spiral beam trajectory controlled by the formatter 50. In the following, the spiral beam trajectory (line) LS formed for each rotation in j to (j + 3) rotations (in this embodiment, j = 1) of the substrate 15 is represented by the line number j. (Ie, LS = j), LSj or LS (j) is used for description.

 図13は、スパイラル状の描画ラインLS(j)の各々にピット片V(j)(j=1,2,..,4)が描画されていることを模式的に示している。そして、実施例1の場合と同様にして(図8~図11)、ピット片V(1)~V(4)によって任意形状のピットWを形成することができる。 FIG. 13 schematically shows that pit pieces V (j) (j = 1, 2,..., 4) are drawn on each of the spiral drawing lines LS (j). Then, similarly to the case of the first embodiment (FIGS. 8 to 11), pits W having an arbitrary shape can be formed by the pit pieces V (1) to V (4).

 より詳細には、図13に示すように、実施例1の場合と同様にして、フォーマッタ50の制御によって、基板15の第j回転において、ラインLSj上におけるピット片V(j)のピット片描画開始点(以下、単に描画開始点という。)VS(j)から描画長さVL(j)に亘ってピット片の描画が実行される(j=1,2,3,4)。これにより、ピット片V(j)の描画が行われる。なお、実施例1の場合と同様に、ピット片描画終了点VE(j)が定義又は設定され、描画開始点VS(j)から描画終了点VE(j)まで描画(ビーム照射)を行うようにしてもよい。 More specifically, as shown in FIG. 13, in the same manner as in the first embodiment, under the control of the formatter 50, the pit piece drawing of the pit piece V (j) on the line LSj is performed in the j-th rotation of the substrate 15. The drawing of the pit piece is executed from the start point (hereinafter simply referred to as the drawing start point) VS (j) to the drawing length VL (j) (j = 1, 2, 3, 4). As a result, the pit piece V (j) is drawn. As in the first embodiment, the pit piece drawing end point VE (j) is defined or set, and drawing (beam irradiation) is performed from the drawing start point VS (j) to the drawing end point VE (j). It may be.

 なお、描画開始位置及び描画終了点、あるいは、ピット片描画長さの設定値はメモリ53、あるいは、EBR制御信号生成器(プロセッサ)51に設けられた記憶部に記憶されている。 Note that the drawing start position and drawing end point, or set values of the pit piece drawing length are stored in the memory 53 or a storage unit provided in the EBR control signal generator (processor) 51.

 また、例えば、ラインLSjの描画において、外周方向オフセット信号F8によって外周方向にビームが偏向(+シフト)されて描画がなされ、あるいは内周方向オフセット信号F9によって内周方向にビームが偏向(-シフト)された状態で描画がなされるようにすることもできる。なお、本実施例(図13)においては、ラインLS2上のピット片V(2)の描画において、内周方向オフセット信号F9によって内周にビームが偏向(-シフト)された状態で描画がなされ、ラインLS3上のピット片V(3)の描画において、外周方向オフセット信号F8によって外周方向にビームが偏向(+シフト)され、描画がなされる場合を示している。 Further, for example, in the drawing of the line LSj, the beam is deflected (+ shifted) in the outer circumferential direction by the outer circumferential direction offset signal F8, or the beam is deflected (−shifted) in the inner circumferential direction by the inner circumferential direction offset signal F9. It is also possible to draw in a state of being). In this embodiment (FIG. 13), in the drawing of the pit piece V (2) on the line LS2, the drawing is performed in a state where the beam is deflected (−shifted) to the inner circumference by the inner circumference direction offset signal F9. In the drawing of the pit piece V (3) on the line LS3, the drawing shows that the beam is deflected (+ shifted) in the outer peripheral direction by the outer peripheral direction offset signal F8 and drawing is performed.

 かかるピット片V(2)~V(3)の描画によって、ラジアル方向のドーズ量のプロファイルを調整することができる。この場合、ピット片V(1)~V(4)の合成によって得られるピットWのラジアル方向のエッジ部がラジアル方向中央部に比べて増強されたドーズ量プロファイルとなる。 The profile of the dose amount in the radial direction can be adjusted by drawing the pit pieces V (2) to V (3). In this case, the edge portion in the radial direction of the pit W obtained by the synthesis of the pit pieces V (1) to V (4) becomes a dose amount profile enhanced compared to the central portion in the radial direction.

 あるいは、また、タンジェンシャル偏向信号F16を出力し、ピット片V(j)を描画する際に高速でビームを接線方向又は円周方向(+θ,-θ方向)に偏向することで、タンジェンシャル方向又は円周方向のドーズ量のプロファイルを調整することができる。タンジェンシャル偏向信号F16によるドーズ量調整は単独で用いられてもよく、あるいは、外周方向オフセット信号F8及び/又は内周方向オフセット信号F9によるドーズ量調整と共に用いられてもよい。 Alternatively, the tangential direction can be obtained by outputting the tangential deflection signal F16 and deflecting the beam in the tangential direction or the circumferential direction (+ θ, −θ direction) at a high speed when drawing the pit piece V (j). Alternatively, the dose profile in the circumferential direction can be adjusted. The dose adjustment by the tangential deflection signal F16 may be used alone, or may be used together with the dose adjustment by the outer peripheral direction offset signal F8 and / or the inner peripheral direction offset signal F9.

 そして、ピット片V(1)~V(4)の合成によって任意形状のピットWを形成することができる。 Then, a pit W having an arbitrary shape can be formed by synthesizing the pit pieces V (1) to V (4).

 なお、外周方向及び内周方向へのオフセット量(オフセット信号F8、F9)及びタンジェンシャル偏向信号F16は任意に設定可能であり、フォーマッタ50は、入力された重なり度合いに応じてオフセット量を調整する機能を有する。 The offset amounts (offset signals F8 and F9) and the tangential deflection signal F16 in the outer circumferential direction and the inner circumferential direction can be arbitrarily set, and the formatter 50 adjusts the offset amount according to the input overlapping degree. It has a function.

 また、上記したピットは基板上の任意の位置に描画することができる。また、ピット片V(j)の各々の描画開始位置及び描画終了点、あるいは描画長さ、並びにドーズ量調整を設定することで、任意の形状のピットを描画することができる。さらに、基板上に1つ又は複数のピットを描画することができ、複数のピットを互いに隣接する位置に、あるいは、離散的に描画することもできる。例えば、複数のピットを互いに隣接する位置に描画することによって複数のピットの合成からなる任意形状の1のピットを描画することもできる。 Also, the above pits can be drawn at any position on the substrate. Also, by setting the drawing start position and drawing end point or drawing length of each pit piece V (j), and the dose amount adjustment, it is possible to draw a pit having an arbitrary shape. Furthermore, one or a plurality of pits can be drawn on the substrate, and a plurality of pits can be drawn at positions adjacent to each other or discretely. For example, by drawing a plurality of pits at positions adjacent to each other, it is possible to draw one pit having an arbitrary shape formed by combining a plurality of pits.

 本実施例は電子ビームに限らず、イオンビーム等の他の手段を使った描画に適用できることは言うまでもない。また、本発明はハードディスク用の原板のみならず、光ディスクなどの微細構造体にも応用できる。 Needless to say, the present embodiment is applicable not only to electron beams but also to drawing using other means such as ion beams. Further, the present invention can be applied not only to a hard disk original plate but also to a fine structure such as an optical disk.

 以上、詳細に説明したように、本発明によれば、様々な形状のピットや任意のパターンを高精度に描画することが可能で、自由度が高く制御性に優れた電子ビーム記録装置及びその制御装置、制御方法並びにコンピュータプログラム製品を提供することができる。 As described above in detail, according to the present invention, it is possible to draw pits and arbitrary patterns of various shapes with high precision, an electron beam recording apparatus having high flexibility and excellent controllability, and its A control device, a control method, and a computer program product can be provided.

Claims (24)

基板を回転及び並進させつつ電子ビームを照射して前記基板上にパターンを描画する電子ビーム記録装置の制御装置であって、
 前記電子ビームの前記基板上にパターン片を描画するための設定値を記憶する記憶部と、
前記設定値に基づいて、前記パターン片を前記電子ビームにより前記基板へ描画を行う変調信号を生成する変調信号生成器と、を有し、
 前記設定値は、複数の前記パターン片の組合せによって前記パターンが構成されるように定められていることを特徴とする制御装置。
A control device for an electron beam recording apparatus that draws a pattern on the substrate by irradiating an electron beam while rotating and translating the substrate,
A storage unit for storing a setting value for drawing a pattern piece on the substrate of the electron beam;
A modulation signal generator for generating a modulation signal for drawing the pattern piece on the substrate by the electron beam based on the set value;
The control apparatus is characterized in that the set value is determined so that the pattern is constituted by a combination of a plurality of the pattern pieces.
 前記パターンは、複数の描画ラインの各々に描画されたパターン片の組み合わせによって構成されるように定められていることを特徴とする請求項1に記載の制御装置。 2. The control device according to claim 1, wherein the pattern is determined to be configured by a combination of pattern pieces drawn on each of a plurality of drawing lines. 前記設定値は、前記パターン片の各々の描画開始位置及び描画長さであることを特徴とする請求項1に記載の制御装置。 The control apparatus according to claim 1, wherein the set value is a drawing start position and a drawing length of each of the pattern pieces. 前記基板の回転駆動及び並進駆動の動作クロックを与える回転同期信号及び並進同期信号を生成する同期信号生成器を有し、
 前記変調信号生成器は、前記回転同期信号及び前記並進同期信号に同期して前記変調信号を生成することを特徴とする請求項1に記載の制御装置。
A synchronization signal generator for generating a rotation synchronization signal and a translation synchronization signal for providing an operation clock for rotation drive and translation drive of the substrate;
The control device according to claim 1, wherein the modulation signal generator generates the modulation signal in synchronization with the rotation synchronization signal and the translation synchronization signal.
前記パターンの形状に応じて、当該パターンを構成する前記パターン片の各々を描く際の前記電子ビームのラジアル方向の偏向量を調整するラジアル偏向信号を生成するラジアル偏向信号生成器を有することを特徴とする請求項1乃至4のいずれか1に記載の制御装置。 A radial deflection signal generator that generates a radial deflection signal that adjusts a radial deflection amount of the electron beam when drawing each of the pattern pieces constituting the pattern according to the shape of the pattern. The control device according to any one of claims 1 to 4. 前記パターンの形状に応じて、当該パターンを構成する前記パターン片の各々を描く際の前記電子ビームのタンジェンシャル方向の偏向量を調整するタンジェンシャル偏向信号を生成するタンジェンシャル偏向信号生成器を有することを特徴とする請求項1乃至5のいずれか1に記載の制御装置。 A tangential deflection signal generator that generates a tangential deflection signal that adjusts a deflection amount of the electron beam in a tangential direction when drawing each of the pattern pieces constituting the pattern according to the shape of the pattern; The control device according to claim 1, wherein the control device is a control device. 前記電子ビームの前記基板上のビームスポットが前記基板の並進に追従するように前記並進同期信号に同期して前記電子ビームを偏向させる追従偏向信号を生成する追従偏向信号生成器を有することを特徴とする請求項1乃至6のいずれか1項に記載の制御装置。 And a tracking deflection signal generator for generating a tracking deflection signal for deflecting the electron beam in synchronization with the translation synchronization signal so that a beam spot of the electron beam on the substrate follows the translation of the substrate. The control device according to any one of claims 1 to 6. 請求項1に記載の制御装置であって、前記電子ビームの照射による1の描画ラインのドーズ量分布が隣接する描画ラインとで互いにオーバーラップすることを特徴とする制御装置。 2. The control device according to claim 1, wherein dose distributions of one drawing line by irradiation of the electron beam overlap each other with adjacent drawing lines. 基板を回転及び並進させつつ電子ビームを照射して前記基板上にパターンを描画する電子ビーム記録装置の制御に用いられるコンピュータのプログラムであって、
 前記電子ビームの前記基板上にパターン片を描画するための設定値であって、複数の前記パターン片の組合せによって前記パターンが構成されるように定められている設定値を記憶する記憶ステップと、
 前記設定値に基づいて、前記パターン片を前記電子ビームにより前記基板へ描画を行う変調信号を生成する変調信号生成ステップと、を前記コンピュータに実行させるためのプログラム。
A computer program used for controlling an electron beam recording apparatus that draws a pattern on the substrate by irradiating an electron beam while rotating and translating the substrate,
A storage step for storing a setting value for drawing a pattern piece on the substrate of the electron beam, the setting value being determined so that the pattern is configured by a combination of a plurality of the pattern pieces;
A program for causing the computer to execute a modulation signal generation step of generating a modulation signal for drawing the pattern piece on the substrate by the electron beam based on the set value.
 前記パターンは、複数の描画ラインの各々に描画されたパターン片の組み合わせによって構成されるように定められていることを特徴とする請求項9に記載のプログラム。 10. The program according to claim 9, wherein the pattern is determined to be configured by a combination of pattern pieces drawn on each of a plurality of drawing lines. 前記設定値は、前記パターン片の各々の描画開始位置及び描画長さであることを特徴とする請求項9に記載のプログラム。 The program according to claim 9, wherein the set value is a drawing start position and a drawing length of each of the pattern pieces. 前記基板の回転駆動及び並進駆動の動作クロックを与える回転同期信号及び並進同期信号を生成する同期信号生成器を有し、
 前記変調信号生成器は、前記回転同期信号及び前記並進同期信号に同期して前記変調信号を生成することを特徴とする請求項9に記載のプログラム。
A synchronization signal generator for generating a rotation synchronization signal and a translation synchronization signal for providing an operation clock for rotation drive and translation drive of the substrate;
The program according to claim 9, wherein the modulation signal generator generates the modulation signal in synchronization with the rotation synchronization signal and the translation synchronization signal.
前記パターンの形状に応じて、当該パターンを構成する前記パターン片の各々を描く際の前記電子ビームのラジアル方向の偏向量を調整するラジアル偏向信号を生成するラジアル偏向信号生成ステップを有することを特徴とする請求項9乃至12のいずれか1に記載のプログラム。 A radial deflection signal generating step for generating a radial deflection signal for adjusting a radial deflection amount of the electron beam when drawing each of the pattern pieces constituting the pattern according to the shape of the pattern. The program according to any one of claims 9 to 12. 前記パターンの形状に応じて、当該パターンを構成する前記パターン片の各々を描く際の前記電子ビームのタンジェンシャル方向の偏向量を調整するタンジェンシャル偏向信号を生成するタンジェンシャル偏向信号生成ステップを有することを特徴とする請求項9乃至13のいずれか1に記載のプログラム。 A tangential deflection signal generating step for generating a tangential deflection signal for adjusting a deflection amount in the tangential direction of the electron beam when drawing each of the pattern pieces constituting the pattern according to the shape of the pattern; The program according to claim 9, wherein the program is any one of the above. 前記電子ビームの前記基板上のビームスポットが前記基板の並進に追従するように前記並進同期信号に同期して前記電子ビームを偏向させる追従偏向信号を生成する追従偏向信号生成ステップを有することを特徴とする請求項9乃至14のいずれか1に記載のプログラム。 A tracking deflection signal generating step for generating a tracking deflection signal for deflecting the electron beam in synchronization with the translation synchronization signal so that a beam spot of the electron beam on the substrate follows the translation of the substrate; The program according to any one of claims 9 to 14. 請求項9に記載の制御装置であって、前記電子ビームの照射による1の描画ラインのドーズ量分布が隣接する描画ラインとで互いにオーバーラップすることを特徴とするプログラム。 10. The program according to claim 9, wherein the dose distribution of one drawing line by the irradiation of the electron beam overlaps with an adjacent drawing line. 基板を回転及び並進させつつ電子ビームを照射して前記基板上にパターンを描画する電子ビーム記録装置であって、
 前記電子ビームの前記基板上にパターン片を描画するための設定値を記憶する記憶部と、前記設定値に基づいて、前記パターン片を前記電子ビームにより前記基板へ描画を行う変調信号を生成する変調信号生成器と、を有し、前記設定値は、複数の前記パターン片の組合せによって前記パターンが構成されるように定められている制御装置と、
 前記基板を回転駆動及び並進駆動する回転及び並進駆動部と、
 前記変調信号に応じて電子ビームのオンオフ変調を行う電子ビーム変調器と、を有することを特徴とする電子ビーム記録装置。
An electron beam recording apparatus that draws a pattern on the substrate by irradiating an electron beam while rotating and translating the substrate,
A storage unit that stores a setting value for drawing a pattern piece on the substrate of the electron beam, and generates a modulation signal for drawing the pattern piece on the substrate by the electron beam based on the setting value. A control signal generator, wherein the set value is determined such that the pattern is configured by a combination of a plurality of pattern pieces;
A rotation and translation drive for rotating and translating the substrate; and
An electron beam recording apparatus comprising: an electron beam modulator that performs on / off modulation of an electron beam in accordance with the modulation signal.
 前記パターンは、複数の描画ラインの各々に描画されたパターン片の組み合わせによって構成されるように定められていることを特徴とする請求項17に記載の電子ビーム記録装置。 18. The electron beam recording apparatus according to claim 17, wherein the pattern is defined by a combination of pattern pieces drawn on each of a plurality of drawing lines. 前記設定値は、前記パターン片の各々の描画開始位置及び描画長さであることを特徴とする請求項17に記載の電子ビーム記録装置。 The electron beam recording apparatus according to claim 17, wherein the set value is a drawing start position and a drawing length of each of the pattern pieces. 前記基板の回転駆動及び並進駆動の動作クロックを与える回転同期信号及び並進同期信号を生成する同期信号生成器を有し、
 前記変調信号生成器は、前記回転同期信号及び前記並進同期信号に同期して前記変調信号を生成することを特徴とする請求項17に記載の電子ビーム記録装置。
A synchronization signal generator for generating a rotation synchronization signal and a translation synchronization signal for providing an operation clock for rotation drive and translation drive of the substrate;
18. The electron beam recording apparatus according to claim 17, wherein the modulation signal generator generates the modulation signal in synchronization with the rotation synchronization signal and the translation synchronization signal.
前記パターンの形状に応じて、当該パターンを構成する前記パターン片の各々を描く際の前記電子ビームのラジアル方向の偏向量を調整するラジアル偏向信号を生成するラジアル偏向信号生成器を有することを特徴とする請求項17に記載の電子ビーム記録装置。 A radial deflection signal generator that generates a radial deflection signal that adjusts a radial deflection amount of the electron beam when drawing each of the pattern pieces constituting the pattern according to the shape of the pattern. The electron beam recording apparatus according to claim 17. 前記パターンの形状に応じて、当該パターンを構成する前記パターン片の各々を描く際の前記電子ビームのタンジェンシャル方向の偏向量を調整するタンジェンシャル偏向信号を生成するタンジェンシャル偏向信号生成器を有することを特徴とする請求項17乃至21のいずれか1に記載の電子ビーム記録装置。 A tangential deflection signal generator that generates a tangential deflection signal that adjusts a deflection amount of the electron beam in a tangential direction when drawing each of the pattern pieces constituting the pattern according to the shape of the pattern; The electron beam recording apparatus according to any one of claims 17 to 21, wherein the electron beam recording apparatus is characterized in that: 前記電子ビームの前記基板上のビームスポットが前記基板の並進に追従するように前記並進同期信号に同期して前記電子ビームを偏向させる追従偏向信号を生成する追従偏向信号生成器を有することを特徴とする請求項17乃至22のいずれか1に記載の電子ビーム記録装置。 And a tracking deflection signal generator for generating a tracking deflection signal for deflecting the electron beam in synchronization with the translation synchronization signal so that a beam spot of the electron beam on the substrate follows the translation of the substrate. The electron beam recording apparatus according to any one of claims 17 to 22. 請求項17に記載の電子ビーム記録装置であって、前記電子ビームの照射による1の描画ラインのドーズ量分布が隣接する描画ラインとで互いにオーバーラップすることを特徴とする電子ビーム記録装置。 18. The electron beam recording apparatus according to claim 17, wherein the dose amount distribution of one drawing line by the irradiation of the electron beam overlaps with an adjacent drawing line.
PCT/JP2008/063907 2008-08-01 2008-08-01 Electron beam recorder, its controller, and control method Ceased WO2010013348A1 (en)

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JPH11259916A (en) * 1998-03-10 1999-09-24 Sony Corp Method and apparatus for manufacturing disk-shaped recording medium
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Publication number Priority date Publication date Assignee Title
JPH01315037A (en) * 1987-10-05 1989-12-20 Hitachi Maxell Ltd Optical device for optical information recording medium
JPH01235047A (en) * 1988-03-14 1989-09-20 Sony Corp Working device for disk-shaped recording medium
JPH11259916A (en) * 1998-03-10 1999-09-24 Sony Corp Method and apparatus for manufacturing disk-shaped recording medium
JP2005524104A (en) * 2002-04-24 2005-08-11 オブデュキャット、アクチボラグ Lithographic apparatus, method and computer program product
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