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WO2010099892A3 - Solarzellen mit rückseitenkontaktierung sowie verfahren zu deren herstellung - Google Patents

Solarzellen mit rückseitenkontaktierung sowie verfahren zu deren herstellung Download PDF

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Publication number
WO2010099892A3
WO2010099892A3 PCT/EP2010/001152 EP2010001152W WO2010099892A3 WO 2010099892 A3 WO2010099892 A3 WO 2010099892A3 EP 2010001152 W EP2010001152 W EP 2010001152W WO 2010099892 A3 WO2010099892 A3 WO 2010099892A3
Authority
WO
WIPO (PCT)
Prior art keywords
solar cells
rear contact
contact solar
production
relates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/001152
Other languages
English (en)
French (fr)
Other versions
WO2010099892A2 (de
Inventor
Filip Granek
Daniel Kray
Kuno Mayer
Monica Aleman
Sybille Hopman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to US13/254,181 priority Critical patent/US20120138138A1/en
Priority to CN2010800100885A priority patent/CN102341921A/zh
Priority to EP10705559A priority patent/EP2404323A2/de
Publication of WO2010099892A2 publication Critical patent/WO2010099892A2/de
Publication of WO2010099892A3 publication Critical patent/WO2010099892A3/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10P32/16—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Herstellung von Solarzellen mit Rückseitenkontaktierung, das auf einer Mikrostrukturierung eines mit einer dielektrisehen Schicht versehenen Wafers und einer Dotierung der mikrostrukturierten Bereiche auf der Rückseite sowie einer Emitterdiffusion auf der Frontseite basiert. Im Anschluss erfolgt die Abscheidung einer metallhaltigen Keimschicht sowie eine galvanische Verstärkung der Kontaktierungen auf der Rückseite. Ebenso betrifft die Erfindung derart herstellbare Solarzellen.
PCT/EP2010/001152 2009-03-02 2010-02-22 Solarzellen mit rückseitenkontaktierung sowie verfahren zu deren herstellung Ceased WO2010099892A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/254,181 US20120138138A1 (en) 2009-03-02 2010-02-22 Solar cells with back side contacting and also method for production thereof
CN2010800100885A CN102341921A (zh) 2009-03-02 2010-02-22 背面接触太阳能电池及其制造方法
EP10705559A EP2404323A2 (de) 2009-03-02 2010-02-24 Solarzellen mit rückseitenkontaktierung sowie verfahren zu deren herstellung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009011305.3 2009-03-02
DE102009011305A DE102009011305A1 (de) 2009-03-02 2009-03-02 Solarzellen mit Rückseitenkontaktierung sowie Verfahren zu deren Herstellung

Publications (2)

Publication Number Publication Date
WO2010099892A2 WO2010099892A2 (de) 2010-09-10
WO2010099892A3 true WO2010099892A3 (de) 2010-12-02

Family

ID=42470673

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/001152 Ceased WO2010099892A2 (de) 2009-03-02 2010-02-22 Solarzellen mit rückseitenkontaktierung sowie verfahren zu deren herstellung

Country Status (6)

Country Link
US (1) US20120138138A1 (de)
EP (1) EP2404323A2 (de)
KR (1) KR20110137299A (de)
CN (1) CN102341921A (de)
DE (1) DE102009011305A1 (de)
WO (1) WO2010099892A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102201493A (zh) * 2011-04-02 2011-09-28 周明 一种高速精密晶硅激光刻蚀的装备和工艺方法
US9559228B2 (en) 2011-09-30 2017-01-31 Sunpower Corporation Solar cell with doped groove regions separated by ridges
CN102437242B (zh) * 2011-12-05 2014-06-25 天威新能源控股有限公司 一种太阳电池背面钝化层开口方法
CN102842646A (zh) * 2012-05-30 2012-12-26 浙江晶科能源有限公司 一种基于n型衬底的ibc电池的制备方法
DE102012214011A1 (de) * 2012-07-23 2014-05-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zum schicht- und regioselektiven Abtrag einer metallhaltigen Feststoffschicht von einer zweiten Feststoffschicht mit Hilfe eines Flüssigkeitsstrahls
US9379258B2 (en) 2012-11-05 2016-06-28 Solexel, Inc. Fabrication methods for monolithically isled back contact back junction solar cells
WO2014137283A1 (en) * 2013-03-05 2014-09-12 Trina Solar Energy Development Pte Ltd Method of fabricating a solar cell
CN103367539B (zh) * 2013-06-26 2015-09-09 英利集团有限公司 Ibc太阳能电池的制作方法及ibc太阳能电池
KR101424538B1 (ko) * 2013-06-28 2014-08-04 주식회사 엔씨디 레이저 어닐링 방법을 이용한 베컨텍 태양전지 제조방법
US9653638B2 (en) 2013-12-20 2017-05-16 Sunpower Corporation Contacts for solar cells formed by directing a laser beam with a particular shape on a metal foil over a dielectric region
CN103956410A (zh) * 2014-05-09 2014-07-30 苏州阿特斯阳光电力科技有限公司 一种n型背结太阳能电池的制备方法
DE102014109179B4 (de) * 2014-07-01 2023-09-14 Universität Konstanz Verfahren zum Erzeugen von unterschiedlich dotierten Bereichen in einem Siliziumsubstrat, insbesondere für eine Solarzelle, und Solarzelle mit diesen unterschiedlich dotierten Bereichen
DE102015213473A1 (de) * 2015-07-17 2017-01-19 Robert Bosch Gmbh Herstellungsverfahren für eine mikromechanische Fensterstruktur und entsprechende mikromechanische Fensterstruktur
CN209389043U (zh) * 2018-11-27 2019-09-13 晶澳（扬州）太阳能科技有限公司 晶体硅太阳能电池及光伏组件
CN113948611B (zh) * 2021-10-15 2023-12-01 浙江爱旭太阳能科技有限公司 一种p型ibc电池及其制备方法、组件、光伏系统
CN117374158B (zh) * 2023-10-17 2024-05-31 扬州大学 一种基于光诱导掺杂的bc结构太阳能电池的制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999056907A1 (de) * 1998-04-30 1999-11-11 Synova S.A. Materialbearbeitungsvorrichtung mit einem in einen flüssigkeitsstrahl eingekoppelten laserstrahl
EP1657020A1 (de) * 2004-11-10 2006-05-17 Synova S.A. Verfahren und Vorrichtung zur Optimierung der Kohärenz eines Flüssigkeitsstrahls für eine Materialbearbeitung und Flüssigkeitsdüse für eine solche Vorrichtung
DE102006042617A1 (de) * 2006-09-05 2007-09-13 Maximilian Scherff Lokale Heterostrukturkontakte
WO2008107194A2 (de) * 2007-03-06 2008-09-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur präzisionsbearbeitung von substraten und dessen verwendung
WO2008137174A1 (en) * 2007-05-07 2008-11-13 Georgia Tech Research Corporation Formation of high quality back contact with screen-printed local back surface field

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5538564A (en) * 1994-03-18 1996-07-23 Regents Of The University Of California Three dimensional amorphous silicon/microcrystalline silicon solar cells
DE10150040A1 (de) * 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
US6998288B1 (en) * 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
DE102006003604A1 (de) * 2005-03-16 2006-11-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Mikrostrukturierung von Festkörperoberflächen
JP2009524523A (ja) * 2006-01-25 2009-07-02 フラオンホファー−ゲゼルシャフト・ツア・フェルデルング・デア・アンゲヴァンテン・フォルシュング・エー・ファオ 基板を精密加工するための方法および装置ならびにその使用

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999056907A1 (de) * 1998-04-30 1999-11-11 Synova S.A. Materialbearbeitungsvorrichtung mit einem in einen flüssigkeitsstrahl eingekoppelten laserstrahl
EP1657020A1 (de) * 2004-11-10 2006-05-17 Synova S.A. Verfahren und Vorrichtung zur Optimierung der Kohärenz eines Flüssigkeitsstrahls für eine Materialbearbeitung und Flüssigkeitsdüse für eine solche Vorrichtung
DE102006042617A1 (de) * 2006-09-05 2007-09-13 Maximilian Scherff Lokale Heterostrukturkontakte
WO2008107194A2 (de) * 2007-03-06 2008-09-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur präzisionsbearbeitung von substraten und dessen verwendung
WO2008137174A1 (en) * 2007-05-07 2008-11-13 Georgia Tech Research Corporation Formation of high quality back contact with screen-printed local back surface field

Also Published As

Publication number Publication date
US20120138138A1 (en) 2012-06-07
CN102341921A (zh) 2012-02-01
KR20110137299A (ko) 2011-12-22
DE102009011305A1 (de) 2010-09-09
EP2404323A2 (de) 2012-01-11
WO2010099892A2 (de) 2010-09-10

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