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WO2010097268A3 - Mwt-halbleiter-solarzelle mit einer vielzahl von das halbleitende material kontaktierenden, parallel zueinander verlaufenden schmalen leitfähigen fingern vorgegebener länge - Google Patents

Mwt-halbleiter-solarzelle mit einer vielzahl von das halbleitende material kontaktierenden, parallel zueinander verlaufenden schmalen leitfähigen fingern vorgegebener länge Download PDF

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Publication number
WO2010097268A3
WO2010097268A3 PCT/EP2010/051106 EP2010051106W WO2010097268A3 WO 2010097268 A3 WO2010097268 A3 WO 2010097268A3 EP 2010051106 W EP2010051106 W EP 2010051106W WO 2010097268 A3 WO2010097268 A3 WO 2010097268A3
Authority
WO
WIPO (PCT)
Prior art keywords
fingers
mwt
conductive fingers
cell
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2010/051106
Other languages
English (en)
French (fr)
Other versions
WO2010097268A2 (de
Inventor
Hans-Joachim Krokoszinski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to EP10701388A priority Critical patent/EP2401772A2/de
Publication of WO2010097268A2 publication Critical patent/WO2010097268A2/de
Anticipated expiration legal-status Critical
Publication of WO2010097268A3 publication Critical patent/WO2010097268A3/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/90—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers
    • H10F19/902—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells
    • H10F19/908—Structures for connecting between photovoltaic cells, e.g. interconnections or insulating spacers for series or parallel connection of photovoltaic cells for back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/215—Geometries of grid contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/223—Arrangements for electrodes of back-contact photovoltaic cells for metallisation wrap-through [MWT] photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Die Erfindung betrifft eine MWT-Halbbleiter-Solarzelle mit einer Vielzahl von das halbleitende Material kontaktierenden, parallel zueinander verlaufenden schmalen leitfähigen Fingern vorgegebener Länge, welche sich auf der dem Licht zugewandten Vorderseite der Zelle befinden, und Durchkontaktierungslöchern zu m elektrischen Verbinden der leitfähigen Finger mit auf der Rückseite der Zelle vorgesehenen, gegenüber ihrer Umgebung isolierten Busbars, wobei die leitfähigen Finger streifenförmig verteilt auf der Zelle angeordnet sind. Erfindungsgemäß ist die Länge der Finger je Fingerstreifen durch eine erhöhte Streifenanzahl je Zelle reduziert, wobei jeweils elektrisch verschaltete Fingergruppen, bestehend aus fünf bis zehn parallelen Fingern, durch jeweils ein querliegendes leitfähiges Bahnstück gebildet werden und jedes Bahnstück mit mindestens einem Durchkontaktierungsloch in Verbindung steht.
PCT/EP2010/051106 2009-02-24 2010-01-29 Mwt-halbleiter-solarzelle mit einer vielzahl von das halbleitende material kontaktierenden, parallel zueinander verlaufenden schmalen leitfähigen fingern vorgegebener länge Ceased WO2010097268A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP10701388A EP2401772A2 (de) 2009-02-24 2010-01-29 Mwt-halbleiter-solarzelle mit einer vielzahl von das halbleitende material kontaktierenden, parallel zueinander verlaufenden schmalen leitfähigen fingern vorgegebener länge

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102009010246 2009-02-24
DE102009010246.9 2009-02-24
DE102009041722 2009-09-16
DE102009041722.2 2009-09-16
DE102009047778.0 2009-09-30
DE102009047778A DE102009047778A1 (de) 2009-02-24 2009-09-30 MWT-Halbleiter-Solarzelle mit einer Vielzahl von das halbleitende Material kontaktierenden, parallel zueinander verlaufenden schmalen leitfähigen Fingern vorgegebener Länge

Publications (2)

Publication Number Publication Date
WO2010097268A2 WO2010097268A2 (de) 2010-09-02
WO2010097268A3 true WO2010097268A3 (de) 2011-09-15

Family

ID=42371846

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2010/051106 Ceased WO2010097268A2 (de) 2009-02-24 2010-01-29 Mwt-halbleiter-solarzelle mit einer vielzahl von das halbleitende material kontaktierenden, parallel zueinander verlaufenden schmalen leitfähigen fingern vorgegebener länge

Country Status (3)

Country Link
EP (1) EP2401772A2 (de)
DE (1) DE102009047778A1 (de)
WO (1) WO2010097268A2 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8916410B2 (en) 2011-05-27 2014-12-23 Csi Cells Co., Ltd Methods of manufacturing light to current converter devices
US9153713B2 (en) 2011-04-02 2015-10-06 Csi Cells Co., Ltd Solar cell modules and methods of manufacturing the same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010060303A1 (de) 2010-11-02 2012-05-03 Solarworld Innovations Gmbh Verfahren zum Herstellen einer Solarzelle
CN102800723B (zh) * 2011-05-27 2015-10-21 苏州阿特斯阳光电力科技有限公司 太阳电池组件及其制造方法
EP2634814A2 (de) 2012-02-29 2013-09-04 SCHOTT Solar AG Rückseitenkontaktsolarzelle
GB2508792A (en) 2012-09-11 2014-06-18 Rec Modules Pte Ltd Back contact solar cell cell interconnection arrangements
CN104465806A (zh) * 2014-12-18 2015-03-25 浙江鸿禧能源股份有限公司 一种太阳能电池片正电极栅线结构

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007126441A2 (en) * 2005-12-16 2007-11-08 Bp Corporation North America Inc. Back-contact photovoltaic cells
WO2008078741A1 (ja) * 2006-12-26 2008-07-03 Kyocera Corporation 太陽電池モジュール
EP1990839A2 (de) * 2007-05-09 2008-11-12 SANYO Electric Techno Create Co., Ltd. Solarzellenmodul
EP2003699A2 (de) * 2007-06-13 2008-12-17 SCHOTT Solar GmbH Halbleiterbauelement und Verfahren zur Herstellung eines Metall-Halbleiter-Kontakts

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1010635C2 (nl) 1998-11-23 2000-05-24 Stichting Energie Werkwijze voor het vervaardigen van een metallisatiepatroon op een fotovoltaïsche cel.

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007126441A2 (en) * 2005-12-16 2007-11-08 Bp Corporation North America Inc. Back-contact photovoltaic cells
WO2008078741A1 (ja) * 2006-12-26 2008-07-03 Kyocera Corporation 太陽電池モジュール
EP2105970A1 (de) * 2006-12-26 2009-09-30 Kyocera Corporation Solarzellenmodul
EP1990839A2 (de) * 2007-05-09 2008-11-12 SANYO Electric Techno Create Co., Ltd. Solarzellenmodul
EP2003699A2 (de) * 2007-06-13 2008-12-17 SCHOTT Solar GmbH Halbleiterbauelement und Verfahren zur Herstellung eines Metall-Halbleiter-Kontakts

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9153713B2 (en) 2011-04-02 2015-10-06 Csi Cells Co., Ltd Solar cell modules and methods of manufacturing the same
US8916410B2 (en) 2011-05-27 2014-12-23 Csi Cells Co., Ltd Methods of manufacturing light to current converter devices
US9209342B2 (en) 2011-05-27 2015-12-08 Csi Cells Co., Ltd Methods of manufacturing light to current converter devices
US9281435B2 (en) 2011-05-27 2016-03-08 Csi Cells Co., Ltd Light to current converter devices and methods of manufacturing the same

Also Published As

Publication number Publication date
DE102009047778A1 (de) 2010-09-02
WO2010097268A2 (de) 2010-09-02
EP2401772A2 (de) 2012-01-04

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