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WO2010092399A3 - Transducteur mems intégré et circuits - Google Patents

Transducteur mems intégré et circuits Download PDF

Info

Publication number
WO2010092399A3
WO2010092399A3 PCT/GB2010/050233 GB2010050233W WO2010092399A3 WO 2010092399 A3 WO2010092399 A3 WO 2010092399A3 GB 2010050233 W GB2010050233 W GB 2010050233W WO 2010092399 A3 WO2010092399 A3 WO 2010092399A3
Authority
WO
WIPO (PCT)
Prior art keywords
transducer
circuitry
layer
plate
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/GB2010/050233
Other languages
English (en)
Other versions
WO2010092399A2 (fr
Inventor
Anthony Traynor
Neil Sinclair Rankin
Colin Roberts Jenkins
Tsjerk Hoekstra
Richard Laming
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cirrus Logic International UK Ltd
Original Assignee
Wolfson Microelectronics PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wolfson Microelectronics PLC filed Critical Wolfson Microelectronics PLC
Publication of WO2010092399A2 publication Critical patent/WO2010092399A2/fr
Publication of WO2010092399A3 publication Critical patent/WO2010092399A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/04—Microphones
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0257—Microphones or microspeakers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R1/00—Details of transducers, loudspeakers or microphones
    • H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
    • H04R1/04—Structural association of microphone with electric circuitry therefor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
    • H04R31/006—Interconnection of transducer parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

La présente invention concerne l'intégration de transducteurs MEMS avec des circuits électroniques sur le même substrat. Elle concerne également un procédé de fabrication d'un transducteur MEMS intégré et de circuits, le procédé étant entièrement compatible avec un traitement CMOS standard et ne nécessitant pas de posttraitement. Le transducteur est fabriqué par la formation d'au moins une couche membrane, d'une pluralité de couches de plaque arrière et d'au moins une structure sacrificielle, de façon que le retrait de ladite structure laisse la membrane libre de se déplacer par rapport à la plaque arrière fixe. Le procédé forme également des couches de circuits sur le substrat, afin de former les composants des circuits, et fait intervenir le partage de couches de matériau de façon qu'au moins certaines des couches qui forment la plaque arrière du transducteur forment également l'une des couches de circuits et que de telles couches comprennent au moins une couche métallique et au moins une couche diélectrique. Le procédé réduit ainsi le nombre d'étapes de traitement nécessaires par rapport à la fabrication séquentielle des circuits et du transducteur. L'invention concerne également un transducteur intégré et des dispositifs électroniques.
PCT/GB2010/050233 2009-02-13 2010-02-12 Transducteur mems intégré et circuits Ceased WO2010092399A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0902479.5 2009-02-13
GB0902479A GB2467776A (en) 2009-02-13 2009-02-13 Integrated MEMS transducer and circuitry

Publications (2)

Publication Number Publication Date
WO2010092399A2 WO2010092399A2 (fr) 2010-08-19
WO2010092399A3 true WO2010092399A3 (fr) 2011-05-05

Family

ID=40548201

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB2010/050233 Ceased WO2010092399A2 (fr) 2009-02-13 2010-02-12 Transducteur mems intégré et circuits

Country Status (2)

Country Link
GB (1) GB2467776A (fr)
WO (1) WO2010092399A2 (fr)

Families Citing this family (35)

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CN102086019B (zh) * 2010-11-02 2013-04-17 中国电子科技集团公司第二十四研究所 多晶硅悬梁结构的单片制造方法
US9276080B2 (en) 2012-03-09 2016-03-01 Mcube, Inc. Methods and structures of integrated MEMS-CMOS devices
US9540232B2 (en) 2010-11-12 2017-01-10 MCube Inc. Method and structure of MEMS WLCSP fabrication
US9181087B2 (en) 2011-03-02 2015-11-10 Epcos Ag Flat back plate
CN103404172B (zh) * 2011-03-04 2016-11-09 埃普科斯股份有限公司 麦克风和定位两个背板之间的隔膜的方法
US9148726B2 (en) 2011-09-12 2015-09-29 Infineon Technologies Ag Micro electrical mechanical system with bending deflection of backplate structure
FR2983189B1 (fr) * 2011-11-30 2014-02-07 Commissariat Energie Atomique Procede de realisation d'une structure comportant au moins une partie active presentant des zones d'epaisseurs differentes
US10036635B2 (en) 2013-01-25 2018-07-31 MCube Inc. Multi-axis MEMS rate sensor device
US10132630B2 (en) 2013-01-25 2018-11-20 MCube Inc. Multi-axis integrated MEMS inertial sensing device on single packaged chip
US9249012B2 (en) 2013-01-25 2016-02-02 Mcube, Inc. Method and device of MEMS process control monitoring and packaged MEMS with different cavity pressures
US9533873B2 (en) 2013-02-05 2017-01-03 Butterfly Network, Inc. CMOS ultrasonic transducers and related apparatus and methods
US10913653B2 (en) 2013-03-07 2021-02-09 MCube Inc. Method of fabricating MEMS devices using plasma etching and device therefor
US10046964B2 (en) 2013-03-07 2018-08-14 MCube Inc. MEMS structure with improved shielding and method
US9079761B2 (en) * 2013-03-14 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked semiconductor device and method of forming the same related cases
CN105307975B (zh) 2013-03-15 2017-04-26 蝴蝶网络有限公司 互补金属氧化物半导体(cmos)超声换能器及其形成方法
CN105247890B (zh) * 2013-05-28 2019-03-29 罗伯特·博世有限公司 用于微机械麦克风的多层复合式背板
US9510103B2 (en) 2013-09-09 2016-11-29 Audio Pixels Ltd. Microelectromechanical apparatus for generating a physical effect
AU2015247484B2 (en) 2014-04-18 2020-05-14 Butterfly Network, Inc. Ultrasonic transducers in complementary metal oxide semiconductor (CMOS) wafers and related apparatus and methods
DE102014106220B4 (de) 2014-05-05 2020-06-18 Tdk Corporation Sensorbauelement mit zwei Sensorfunktionen
US9067779B1 (en) 2014-07-14 2015-06-30 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
GB2528872B (en) * 2014-07-31 2018-10-31 Cirrus Logic Int Semiconductor Ltd Integrated MEMS transducer and circuitry
US20170374473A1 (en) * 2014-12-23 2017-12-28 Cirrus Logic International Semiconductor Ltd. Mems transducer package
US9862600B2 (en) 2015-05-21 2018-01-09 Ams International Ag Chip structure
JP2018520612A (ja) 2015-07-22 2018-07-26 オーディオ ピクセルズ エルティーディー．Ａｕｄｉｏ Ｐｉｘｅｌｓ Ｌｔｄ． Ｄｓｒスピーカ素子及びその製造方法
US10567883B2 (en) 2015-07-22 2020-02-18 Audio Pixels Ltd. Piezo-electric actuators
US9987661B2 (en) 2015-12-02 2018-06-05 Butterfly Network, Inc. Biasing of capacitive micromachined ultrasonic transducers (CMUTs) and related apparatus and methods
GB2547729B (en) * 2016-02-29 2020-01-22 Cirrus Logic Int Semiconductor Ltd Integrated MEMS transducer and circuitry
US10358340B2 (en) 2016-04-28 2019-07-23 Globalfoundries Singapore Pte. Ltd. Integrated circuits having shielded MEMS devices and methods for fabricating shielded MEMS devices
DE102016123130B4 (de) 2016-11-30 2020-12-10 Infineon Technologies Austria Ag MEMS-Vorrichtung und Verfahren zum Herstellen einer MEMS-Vorrichtung
US10196261B2 (en) 2017-03-08 2019-02-05 Butterfly Network, Inc. Microfabricated ultrasonic transducers and related apparatus and methods
GB2561403A (en) 2017-04-13 2018-10-17 Cirrus Logic Int Semiconductor Ltd MEMS Device
US10512936B2 (en) 2017-06-21 2019-12-24 Butterfly Network, Inc. Microfabricated ultrasonic transducer having individual cells with electrically isolated electrode sections
CN108666412A (zh) * 2018-05-31 2018-10-16 歌尔股份有限公司 一种mems麦克风和气压传感器集成结构及其制作方法
CN110248288A (zh) * 2019-06-11 2019-09-17 东莞泉声电子有限公司 复合喇叭膜片及其制作方法
CN213280087U (zh) * 2019-12-10 2021-05-25 楼氏电子(苏州)有限公司 力反馈致动器和微机电系统电容换能器

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US6012336A (en) * 1995-09-06 2000-01-11 Sandia Corporation Capacitance pressure sensor
US6140689A (en) * 1996-11-22 2000-10-31 Siemens Aktiengesellschaft Micromechanical sensor
US20020135708A1 (en) * 2001-03-23 2002-09-26 Koninklijke Philips Electronics N.V. Display substrate and display device
US20030210799A1 (en) * 2002-05-10 2003-11-13 Gabriel Kaigham J. Multiple membrane structure and method of manufacture
US20060205106A1 (en) * 2005-02-25 2006-09-14 Hiroshi Fukuda Integrated micro electro-mechanical system and manufacturing method thereof

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US5717631A (en) 1995-07-21 1998-02-10 Carnegie Mellon University Microelectromechanical structure and process of making same
WO2000009440A1 (fr) * 1998-08-11 2000-02-24 Infineon Technologies Ag Capteur micromecanique et son procede de production
US6829131B1 (en) 1999-09-13 2004-12-07 Carnegie Mellon University MEMS digital-to-acoustic transducer with error cancellation
US6987859B2 (en) * 2001-07-20 2006-01-17 Knowles Electronics, Llc. Raised microstructure of silicon based device
JP2002131161A (ja) * 2000-10-27 2002-05-09 Denso Corp 半導体圧力センサ
US6472243B2 (en) * 2000-12-11 2002-10-29 Motorola, Inc. Method of forming an integrated CMOS capacitive pressure sensor
GB2435544B (en) 2006-02-24 2008-11-19 Oligon Ltd Mems device
GB0605576D0 (en) 2006-03-20 2006-04-26 Oligon Ltd MEMS device
DE102006022378A1 (de) * 2006-05-12 2007-11-22 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Bauelements und mikromechanisches Bauelement

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6012336A (en) * 1995-09-06 2000-01-11 Sandia Corporation Capacitance pressure sensor
US6140689A (en) * 1996-11-22 2000-10-31 Siemens Aktiengesellschaft Micromechanical sensor
US20020135708A1 (en) * 2001-03-23 2002-09-26 Koninklijke Philips Electronics N.V. Display substrate and display device
US20030210799A1 (en) * 2002-05-10 2003-11-13 Gabriel Kaigham J. Multiple membrane structure and method of manufacture
US20060205106A1 (en) * 2005-02-25 2006-09-14 Hiroshi Fukuda Integrated micro electro-mechanical system and manufacturing method thereof

Also Published As

Publication number Publication date
WO2010092399A2 (fr) 2010-08-19
GB2467776A (en) 2010-08-18
GB0902479D0 (en) 2009-04-01
GB2467776A8 (fr) 2010-09-01

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