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WO2010080437A3 - Memory cell comprising a diode connected to at least three resistivity-switching elements and methods of fabricating and reading the same - Google Patents

Memory cell comprising a diode connected to at least three resistivity-switching elements and methods of fabricating and reading the same Download PDF

Info

Publication number
WO2010080437A3
WO2010080437A3 PCT/US2009/068234 US2009068234W WO2010080437A3 WO 2010080437 A3 WO2010080437 A3 WO 2010080437A3 US 2009068234 W US2009068234 W US 2009068234W WO 2010080437 A3 WO2010080437 A3 WO 2010080437A3
Authority
WO
WIPO (PCT)
Prior art keywords
resistivity
fabricating
reading
methods
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/068234
Other languages
French (fr)
Other versions
WO2010080437A2 (en
Inventor
Roy E. Scheuerlein
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk 3D LLC
Original Assignee
SanDisk 3D LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/318,001 external-priority patent/US7923812B2/en
Priority claimed from US12/318,022 external-priority patent/US7910407B2/en
Application filed by SanDisk 3D LLC filed Critical SanDisk 3D LLC
Publication of WO2010080437A2 publication Critical patent/WO2010080437A2/en
Publication of WO2010080437A3 publication Critical patent/WO2010080437A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/22—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the metal-insulator-metal type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
    • H10D62/882—Graphene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

Landscapes

  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

A non-volatile memory device (100) includes a first electrode (110), a diode steering element (120) at least three resistivity switching storage elements (131,132,133) and a second electrode (151) The diode steering element electrically contacts the first electrode and the at least three resistivity switching storage elements. The second electrode electrically contacts only one of the at least three resistivity switching storage elements.
PCT/US2009/068234 2008-12-19 2009-12-16 Quad memory cell and method of making same Ceased WO2010080437A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/318,001 US7923812B2 (en) 2008-12-19 2008-12-19 Quad memory cell and method of making same
US12/318,022 2008-12-19
US12/318,022 US7910407B2 (en) 2008-12-19 2008-12-19 Quad memory cell and method of making same
US12/318,001 2008-12-19

Publications (2)

Publication Number Publication Date
WO2010080437A2 WO2010080437A2 (en) 2010-07-15
WO2010080437A3 true WO2010080437A3 (en) 2010-09-02

Family

ID=41693147

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/068234 Ceased WO2010080437A2 (en) 2008-12-19 2009-12-16 Quad memory cell and method of making same

Country Status (2)

Country Link
TW (1) TW201027722A (en)
WO (1) WO2010080437A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9911789B2 (en) * 2014-04-10 2018-03-06 Hewlett Packard Enterprise Development Lp 1-Selector n-Resistor memristive devices
CN107579087B (en) * 2016-07-04 2020-04-07 中芯国际集成电路制造(上海)有限公司 Memory cell array structure and electronic device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1426966A2 (en) * 2002-12-05 2004-06-09 Sharp Kabushiki Kaisha Nonvolatile memory cell and nonvolatile semiconductor memory device
US20080175032A1 (en) * 2007-01-23 2008-07-24 Kabushiki Kaisha Toshiba Semiconductor memory and method for manufacturing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4646266A (en) 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US5751012A (en) 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
US5835396A (en) 1996-10-17 1998-11-10 Zhang; Guobiao Three-dimensional read-only memory
NO972803D0 (en) 1997-06-17 1997-06-17 Opticom As Electrically addressable logic device, method of electrically addressing the same and use of device and method
US6034882A (en) 1998-11-16 2000-03-07 Matrix Semiconductor, Inc. Vertically stacked field programmable nonvolatile memory and method of fabrication
US6420215B1 (en) 2000-04-28 2002-07-16 Matrix Semiconductor, Inc. Three-dimensional memory array and method of fabrication
US6618295B2 (en) 2001-03-21 2003-09-09 Matrix Semiconductor, Inc. Method and apparatus for biasing selected and unselected array lines when writing a memory array
US7504051B2 (en) 2003-09-08 2009-03-17 Nantero, Inc. Applicator liquid for use in electronic manufacturing processes

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1426966A2 (en) * 2002-12-05 2004-06-09 Sharp Kabushiki Kaisha Nonvolatile memory cell and nonvolatile semiconductor memory device
US20080175032A1 (en) * 2007-01-23 2008-07-24 Kabushiki Kaisha Toshiba Semiconductor memory and method for manufacturing the same

Also Published As

Publication number Publication date
TW201027722A (en) 2010-07-16
WO2010080437A2 (en) 2010-07-15

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