[go: up one dir, main page]

WO2010076864A1 - Élément piézoélectrique - Google Patents

Élément piézoélectrique Download PDF

Info

Publication number
WO2010076864A1
WO2010076864A1 PCT/JP2009/070404 JP2009070404W WO2010076864A1 WO 2010076864 A1 WO2010076864 A1 WO 2010076864A1 JP 2009070404 W JP2009070404 W JP 2009070404W WO 2010076864 A1 WO2010076864 A1 WO 2010076864A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
piezoelectric
film
piezoelectric element
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2009/070404
Other languages
English (en)
Japanese (ja)
Inventor
昌宣 鶴子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Brother Industries Ltd
Original Assignee
Brother Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Brother Industries Ltd filed Critical Brother Industries Ltd
Publication of WO2010076864A1 publication Critical patent/WO2010076864A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/079—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing using intermediate layers, e.g. for growth control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers

Definitions

  • the present invention relates to a piezoelectric element having as a piezoelectric film a ceramic thin film formed by an aerosol deposition method.
  • the aerosol deposition method has attracted attention as a method for forming a piezoelectric film in a piezoelectric actuator used in an inkjet printer or the like.
  • an aerosol formed by dispersing ceramic fine particles in a gas is sprayed from a nozzle and sprayed onto the substrate surface at a high speed to pulverize and deposit the fine particles on the substrate to form a ceramic thin film.
  • This film-forming method utilizes the normal temperature impact solidification phenomenon caused by the induction of mechanochemical reaction caused by the release of the local impact energy generated by the collision of ceramic fine particles with the substrate surface.
  • this film forming method is performed at room temperature, the sintering process at 900 ° C. or higher, which is performed in the conventional ceramic forming method, is not necessary. This eliminates the need to design a thin film in consideration of dimensional accuracy. Further, in this film forming method, a dense nanocrystal structure can be formed by crushing fine particles.
  • a grain growth annealing process by heating at a relatively high temperature is performed after the film formation.
  • Fe and Cr in stainless steel diffuse into the piezoelectric layer due to the grain growth annealing treatment, and the piezoelectric characteristics are deteriorated.
  • the grain growth annealing process is a process aimed at improving the piezoelectric characteristics and the like of the thin film by heating the thin film formed by the aerosol deposition method to grow crystal grains in the thin film.
  • the above diffusion can be prevented by providing a diffusion prevention layer made of an insulating ceramic material, a metal material, a conductive oxide or the like between the stainless steel substrate and the piezoelectric layer. This is proposed in Patent Document 1.
  • the film formed by the aerosol deposition method is used as the above-described piezoelectric layer and diffusion preventing layer, the film is annealed at the film interface between the piezoelectric layer and the diffusion preventing layer after the grain growth annealing treatment.
  • peeling was very likely to occur.
  • a crack or pinhole is formed in the manufactured piezoelectric element, so that a pair of electrodes sandwiching the piezoelectric layer is electrically connected and short-circuited, and the yield of the piezoelectric element is not improved. there were.
  • the present invention provides a laminated piezoelectric material that can achieve excellent piezoelectric characteristics that are less likely to cause film peeling and short-circuiting as described above, while having a ceramic film formed by an aerosol deposition method as a piezoelectric layer and a diffusion prevention layer.
  • An object is to provide an element.
  • the piezoelectric element according to the present invention is a piezoelectric element having a four-layer structure in which a first layer, a second layer, and a third layer, which is a piezoelectric layer, are laminated in this order on a substrate.
  • the second layer and the third layer are ceramic films each formed by an aerosol deposition method, and the elastic modulus of the first layer is larger than the elastic modulus of the second layer, and the elastic modulus of the second layer. Is larger than the elastic modulus of the third layer.
  • Type piezoelectric element can be provided.
  • the film forming apparatus includes an aerosol generator 1 for generating aerosol by dispersing material particles in a carrier gas, and a chamber 2 for performing film formation inside.
  • the aerosol generator 1 stores a predetermined amount of material particles and introduces a carrier gas.
  • the aerosol generator 1 generates a gas when a carrier gas is introduced, and further generates vibrations by dispersing material particles in the carrier gas by applying vibration using an ultrasonic vibration device from below.
  • carrier gas inert gas, such as helium and argon, nitrogen, air, oxygen etc. can be used, for example.
  • One end of an aerosol supply pipe 3 is inserted in the upper part of the aerosol generator 1.
  • the other end of the aerosol supply pipe 3 is disposed inside the chamber 2 and is connected to an injection nozzle 4.
  • the chamber 2 is connected to a mechanical booster pump and a rotary pump, and these pumps can depressurize the inside of the chamber 2. As a result, the internal pressure of the chamber 2 becomes lower than the internal pressure of the aerosol generator 1. Then, due to the differential pressure between the internal pressure of the chamber 2 and the internal pressure of the aerosol generator 1, the aerosol generated in the aerosol generator 1 is sucked into the aerosol supply pipe 3 and supplied to the injection nozzle 4.
  • the cavity inside the injection nozzle 4 has such a shape that the cross-sectional area decreases as it travels inside. For this reason, the aerosol that has entered the inside of the injection nozzle 4 from the introduction opening of the injection nozzle 4 is accelerated and sprayed from the injection opening of the injection nozzle 4 onto the substrate 7 as an aerosol flow 5 at a high speed. The material particles colliding with the surface of the substrate 7 are crushed and deposited to form a thin film.
  • a substrate holder 6 is disposed above the injection opening of the injection nozzle 4 as a holding means for attaching the substrate 7 to the lower surface.
  • the substrate holder 6 has a rectangular plate shape.
  • the substrate holder 6 is suspended from the ceiling of the chamber 2 in a horizontal posture by a driving device 8 as driving means.
  • the driving device 8 drives the substrate holder 6 in the left-right direction in FIG. By this reciprocating motion in the left-right direction, scanning film formation on the substrate 7 is performed. By this scanning film formation, a thin film is formed in a predetermined wide range of the substrate 7.
  • the substrate that is the film formation target is typically a stainless steel substrate, but is not limited thereto, and may be a substrate made of other metal, silicon, semiconductor, resin, or the like.
  • lead zirconate titanate As a material constituting the material particles, that is, a thin film material formed by an aerosol deposition method, typically, lead zirconate titanate (PZT) can be given.
  • Lead zirconate titanate is generally known as a material that achieves a desired piezoelectric effect with a film thickness of about several ⁇ m.
  • barium titanate, lead titanate, lead magnesium niobate (PMN), lead nickel niobate (PNN), lead zinc niobate, or the like can be used.
  • the piezoelectric material as described above is used as the material constituting the third layer.
  • aluminum oxide, zirconium oxide, silica Metal oxides such as mullite can be used as the material constituting the first layer and the second layer.
  • the particle size of the material particles may be any particle size that can be used in the aerosol deposition method, and may be, for example, about 0.5 ⁇ m to 5.0 ⁇ m.
  • the film thickness of the thin film formed by the aerosol deposition method is usually about several ⁇ m to several tens of ⁇ m.
  • the piezoelectric element of the present invention shown in FIG. 2 has a first ceramic layer 11 as a first layer laminated on a substrate 14.
  • a second ceramic layer 12 as a second layer is laminated on the first ceramic layer 11.
  • a lower electrode 15 is formed on the second ceramic layer 12.
  • An upper electrode 16 is laminated on the third ceramic layer 13.
  • the ceramics constituting the first ceramic layer 11, the second ceramic layer 12, and the third ceramic layer 13 may be selected from various ceramics that satisfy the above-described elastic modulus relationship.
  • the third ceramic layer 13 needs to be a piezoelectric layer.
  • at least the third ceramic layer 13 is made of a piezoelectric material.
  • the first ceramic layer 11 and the second ceramic layer 12 may be made of a piezoelectric material or may be made of a ceramic material other than the piezoelectric material.
  • each layer is formed by the aerosol deposition method described above.
  • a lower electrode 15 is provided over the entire surface of the second ceramic layer 12 at the interface between the second ceramic layer 12 and the third ceramic layer 13.
  • the lower electrode 15 is used as a ground electrode that is grounded and always has a ground potential.
  • an upper electrode 16 configured as an electrode pattern by a plurality of independent regions is provided on the upper surface of the third ceramic layer 13.
  • the upper electrode 16 has a lead portion connected to each individual region, and is connected to the drive circuit IC via the lead portion.
  • the upper electrode 16 is used as a drive electrode to which a potential different from the ground potential and the ground potential is selectively applied by the drive circuit IC.
  • These electrode layers are preferably made of a metal such as Au or Pt.
  • the first ceramic layer 11 is formed on the surface of the substrate by the above-described aerosol deposition method.
  • the second ceramic layer 12 is formed on the surface of the first ceramic layer 11 by an aerosol deposition method.
  • the lower electrode 15 is formed on the surface of the second ceramic layer 12 by vapor deposition or sputtering, or by applying and drying a paste containing metal particles. Film.
  • a stress release annealing process is performed by heating at a relatively low temperature (about 500 ° C.).
  • the stress release annealing treatment is performed for the purpose of heating the thin film formed by the aerosol deposition method to remove the film forming gas and moisture mixed in the film and releasing the residual stress of the thin film. It is processing.
  • the third ceramic layer 13 which is a piezoelectric layer is again formed on the surface of the lower electrode 15 by the aerosol deposition method.
  • grain growth annealing is performed by heating at a relatively high temperature (about 800 to 900 ° C.) in order to grow crystal grains of the piezoelectric layer.
  • the purpose of grain growth annealing is to heat the piezoelectric layer formed by the aerosol deposition method to achieve growth of crystal grains in the thin film and correction of lattice defects, and to improve the piezoelectric properties of the thin film. It is a process performed in. As described above, the piezoelectric layer formed by the aerosol deposition method has a large change in the elastic modulus in the vicinity of the interface due to the grain growth annealing process. However, by adopting the layer structure according to the present invention, film peeling, etc. The problem can be avoided.
  • the upper electrode 16 is formed on the surface of the third ceramic layer 13.
  • masking is performed and a vapor deposition method or a sputtering method may be performed.
  • a metal layer may be formed on the entire surface of the third ceramic layer 13 by vapor deposition or sputtering, and then formed into a predetermined pattern using photolithography etching.
  • the upper electrode 16 may be formed by screen printing directly on the surface of the third ceramic layer 13. As described above, the piezoelectric element according to the present invention can be manufactured.
  • the elastic modulus of the first ceramic layer 11 constituting the four-layer structure is larger than that of the second ceramic layer 12, and the elastic modulus of the second ceramic layer 12 is that of the third ceramic layer 13. It is comprised so that it may become larger than an elasticity modulus.
  • the gap of the elastic modulus between the ceramic layers can be reduced, so that the stress generated between the layers is reduced, and the interfacial peeling of the piezoelectric layer is less likely to occur.
  • cracks and pinholes are less likely to be formed, short circuits are less likely to occur.
  • the piezoelectric characteristics of the piezoelectric element are improved by reducing the internal stress of the piezoelectric layer.
  • the elastic modulus of the ceramic film referred to in the present invention can be measured by a nanoindentation method. Specifically, it is a value measured using an ultra-fine indentation hardness tester: ENT-1100a manufactured by Elionix Co., with an indentation load of 5 mN.
  • the elastic modulus here is a value measured after each layer is formed and before annealing is performed.
  • the piezoelectric characteristic was calculated by calculating the value of the piezoelectric constant ⁇ d31, and evaluating the magnitude of this value.
  • This piezoelectric constant -d31 was calculated by an operation such as measuring the displacement of the piezoelectric actuator, as will be described later.
  • the first layer is made of zirconium oxide
  • the second layer and the third layer are made of lead zirconate titanate
  • the second layer is a film more than the third layer. The thickness is thin.
  • the elastic modulus of the second layer is made larger than that of the third layer by making the film thickness of the second layer thinner than the film thickness of the third layer.
  • the elastic modulus of a ceramic film formed by an aerosol deposition method depends on the thickness of the ceramic film as well as the type of ceramic. That is, in the case of a ceramic film made of the same material, the light ceramic film becomes harder, that is, the elastic modulus increases. Further, as described above, it is also affected by the elastic modulus of the lower layer of the ceramic film. In this embodiment, the relationship between the elastic moduli of the second layer and the third layer is adjusted using these properties.
  • the first layer is made of aluminum oxide
  • the second layer is made of zirconium oxide
  • the third layer is made of lead zirconate titanate.
  • the aluminum oxide thin film generally has a larger elastic modulus than the zirconium oxide thin film, this embodiment uses this relationship.
  • the first layer is made of aluminum oxide
  • the second layer and the third layer are made of lead zirconate titanate
  • the second layer is a film more than the third layer. The thickness is thin.
  • the relationship between the elastic moduli of the second layer and the third layer is adjusted using the same properties as the first embodiment.
  • the relationship that the elastic modulus of the first layer is larger than the elastic modulus of the second layer and the elastic modulus of the second layer is larger than the elastic modulus of the third layer can be satisfied.
  • the elastic modulus gap between the ceramic layers can be reduced as compared with the conventional piezoelectric element having a three-layer structure. For this reason, even if annealing is performed after film formation by the aerosol deposition method, peeling at the film interface hardly occurs, and electrical evaluation is good. Therefore, the yield can be improved and excellent piezoelectric characteristics can be achieved.
  • Example 1 Preparation of substrate Diffusion bonded SUS substrate and evaluation SUS substrate: 15 ⁇ 35 ⁇ 0.4t were prepared. Using a nanoindenter, the elastic modulus of the evaluation SUS substrate was measured at a load of 5 mN.
  • Formation of First Layer A ZrO 2 film was formed as a first layer serving as a diffusion prevention layer on these substrates by a film forming apparatus based on the aerosol deposition method based on the above-described embodiment.
  • An aerosol generator was charged with 160 g of ZrO 2 powder.
  • the SUS substrate was set in the substrate holder, and the portions other than the film formation range were attached with tape.
  • the substrate holder was set on the XY stage in the film forming chamber, and reciprocal scanning was started. In addition, the stage movement repeated the “U-shaped movement”, and two rows (two sheets) of film formation were performed in the same batch.
  • the chamber which is the film forming chamber was evacuated to an ultimate vacuum pressure of 10 to 20 Pa.
  • Carrier gas was introduced from three systems (flow, crushing, acceleration), and the raw material powder was fluidly stirred. In accordance with a predetermined total flow rate (total of three systems), the flow rate of the flowing gas was set constant while observing the flow state.
  • aerosol injection was performed on each SUS substrate for a predetermined film formation time. After the predetermined film formation time was completed, the film formation gas was stopped and the film formation chamber was opened in vacuum. The substrate holder was removed from the XY stage to obtain a SUS substrate having a first layer formed on the surface.
  • the surface of the SUS substrate on which the first layer was formed was air blown to remove the adhered powder.
  • the film thickness of the first layer on the SUS substrate was measured using a step gauge, it was 1.6 ⁇ m.
  • the elastic modulus of the first layer on the SUS substrate for evaluation was measured using a nanoindenter at a load of 5 mN. The measurement result of the elastic modulus is shown in FIG.
  • the SUS substrate on which the second layer was formed was subjected to ultrasonic cleaning with pure water for a treatment time of 1 min to remove the adhered powder. Water was removed at 150 ° C. ⁇ 30 min and dried. When the film thickness of the second layer on the SUS substrate was measured using a step gauge, it was 1.5 ⁇ m. Next, the elastic modulus of the second layer on the evaluation SUS substrate was measured using a nanoindenter at a load of 5 mN.
  • a PZT film was formed as a piezoelectric layer as the third layer on the laminate after the stress release annealing treatment by the aerosol deposition method similar to that for forming the second layer.
  • the surface of the laminate was air blown to remove the adhered powder.
  • the film thickness of the piezoelectric layer on the SUS substrate was measured using a step gauge, it was 4.9 ⁇ m.
  • the elastic modulus of the piezoelectric layer on the evaluation SUS substrate was measured using a nanoindenter at a load of 5 mN.
  • the obtained laminate was put into a muffle furnace and annealed at 850 ° C. ⁇ 30 min to grow PZT crystal grains on the SUS substrate.
  • terminals for voltage application were connected to the upper electrode and the lower electrode, respectively, where there was no defect determined to be good in electrical evaluation. Then, after heating to 250 ° C. in a heat treatment furnace, a DC voltage corresponding to the film thickness was applied between the terminals under a polarization condition of 6 kv / cm ⁇ 15 min. Then, after cooling to 50 ° C., application of the DC voltage was stopped. Finally, the terminal was removed.
  • Displacement measurement A terminal for voltage application was again connected to the upper electrode and the lower electrode. Next, an AC voltage (input waveform: sine wave of 0 to 20 V, frequency 4 kHz) is applied between the terminals, and the dynamic displacement of the actuator diaphragm (diffusion bonding SUS substrate) at that time is applied to the laser Doppler method. Measured.
  • Example 2 ZrO 2 powder in the step of forming the first layer: Al 2 O 3 powder instead of 160 g: using 140 g, the second layer PZT particles in the forming step: except for using 160 g: ZrO 2 powder instead of 200g
  • a piezoelectric element having a four-layer structure made of SUS substrate / Al 2 O 3 / ZrO 2 / PZT in the same manner as in Example 1. No steps after the polarization treatment were performed.
  • the film thickness of the first layer was 1.3 ⁇ m
  • the film thickness of the second layer was 4.5 ⁇ m
  • the film thickness of the piezoelectric layer was 5.2 ⁇ m.
  • Example 3 consisting of SUS substrate / Al 2 O 3 / PZT / PZT in the same manner as in Example 1 except that Al 2 O 3 powder: 140 g was used instead of ZrO 2 powder: 160 g in the first layer forming step.
  • a layered piezoelectric element was manufactured. No steps after the polarization treatment were performed. The film thickness of the first layer was 1.9 ⁇ m, the film thickness of the second layer was 1.6 ⁇ m, and the film thickness of the piezoelectric layer was 7.0 ⁇ m.
  • Example 1 A piezoelectric element having a three-layer structure made of SUS substrate / Al 2 O 3 / PZT was manufactured in the same manner as in Example 3 except that the step of forming the second layer was omitted. Further, all steps after the polarization treatment were performed in the same manner as in Example 1, and the piezoelectric constant -d31 was 38 pm / V. The first layer had a thickness of 2.0 ⁇ m, and the piezoelectric layer had a thickness of 5.0 ⁇ m. The result of measuring the elastic modulus measured in the same manner as above is shown in FIG. Table 1 shows the determination results of film peeling and electrical evaluation.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

L'invention concerne un élément piézoélectrique stratifié qui comprend des pellicules minces formée par le procédé de dépôt aérosol et présente cependant peu de détachement des pellicules, et qui présente des propriétés électriques hautement évaluées, et par conséquent permet d'obtenir un rendement amélioré et d'excellentes caractéristiques piézoélectriques. Elle concerne un élément piézoélectrique comportant une structure à quatre couches comprenant une première couche, une deuxième couche et une troisième couche qui sont stratifiées dans cet ordre sur un substrat, les première, deuxième et troisième couches étant respectivement des pellicules céramiques formées par le procédé de dépôt aérosol, et le module d'élasticité de la première couche étant supérieur au module d'élasticité de la deuxième couche et le module d'élasticité de la deuxième couche étant supérieur au module d'élasticité de la troisième couche. Des exemples du mode de réalisation spécifique de la première couche/deuxième couche/troisième couche comprennent ZrO2/PZT/PZT, Al2O3/ZrO2/PZT et Al2O3/PZT/PZT.
PCT/JP2009/070404 2008-12-29 2009-12-04 Élément piézoélectrique Ceased WO2010076864A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008-335785 2008-12-29
JP2008335785A JP2010157648A (ja) 2008-12-29 2008-12-29 圧電素子

Publications (1)

Publication Number Publication Date
WO2010076864A1 true WO2010076864A1 (fr) 2010-07-08

Family

ID=42309917

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/070404 Ceased WO2010076864A1 (fr) 2008-12-29 2009-12-04 Élément piézoélectrique

Country Status (2)

Country Link
JP (1) JP2010157648A (fr)
WO (1) WO2010076864A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013026668A1 (fr) * 2011-08-19 2013-02-28 Siemens Aktiengesellschaft Procédé de fabrication d'un transducteur de flexion piézocéramique
EP3653755A1 (fr) * 2018-11-13 2020-05-20 Siemens Aktiengesellschaft Fabrication d'un corps moulé par dépôt d'aérosols

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5526704B2 (ja) * 2009-10-26 2014-06-18 Ｔｄｋ株式会社 圧電アクチュエータ
JP6311179B2 (ja) * 2013-12-27 2018-04-18 株式会社ユーテック 強誘電体セラミックス

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005279953A (ja) * 2004-03-26 2005-10-13 Fuji Photo Film Co Ltd セラミックス構造物及びセラミックス構造物の製造方法
JP2006173249A (ja) * 2004-12-14 2006-06-29 Fuji Photo Film Co Ltd 圧電アクチュエータ及びその製造方法並びに液体吐出ヘッド
JP2006229154A (ja) * 2005-02-21 2006-08-31 Brother Ind Ltd 圧電アクチュエータ、インクジェットヘッド、およびそれらの製造方法
JP2007042740A (ja) * 2005-08-01 2007-02-15 Hitachi Cable Ltd 圧電薄膜素子
JP2008027961A (ja) * 2006-07-18 2008-02-07 Ngk Insulators Ltd 誘電体デバイス
JP2008102318A (ja) * 2006-10-19 2008-05-01 Nec Corp 光学素子、光集積デバイス、及びその製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005279953A (ja) * 2004-03-26 2005-10-13 Fuji Photo Film Co Ltd セラミックス構造物及びセラミックス構造物の製造方法
JP2006173249A (ja) * 2004-12-14 2006-06-29 Fuji Photo Film Co Ltd 圧電アクチュエータ及びその製造方法並びに液体吐出ヘッド
JP2006229154A (ja) * 2005-02-21 2006-08-31 Brother Ind Ltd 圧電アクチュエータ、インクジェットヘッド、およびそれらの製造方法
JP2007042740A (ja) * 2005-08-01 2007-02-15 Hitachi Cable Ltd 圧電薄膜素子
JP2008027961A (ja) * 2006-07-18 2008-02-07 Ngk Insulators Ltd 誘電体デバイス
JP2008102318A (ja) * 2006-10-19 2008-05-01 Nec Corp 光学素子、光集積デバイス、及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013026668A1 (fr) * 2011-08-19 2013-02-28 Siemens Aktiengesellschaft Procédé de fabrication d'un transducteur de flexion piézocéramique
EP3653755A1 (fr) * 2018-11-13 2020-05-20 Siemens Aktiengesellschaft Fabrication d'un corps moulé par dépôt d'aérosols

Also Published As

Publication number Publication date
JP2010157648A (ja) 2010-07-15

Similar Documents

Publication Publication Date Title
JP5188076B2 (ja) 圧電素子及びその製造方法、電子デバイス、インクジェット装置
JP4428509B2 (ja) 圧電体の製造方法
JP2001152360A (ja) セラミックス誘電体膜の形成方法、セラミックス誘電体膜／基板の積層構造体、及び電気−機械変換素子
US11805700B2 (en) Laminated substrate having piezoelectric film, element having piezoelectric film and method for manufacturing this laminated substrate
JP4357659B2 (ja) 圧電体装置及びその製造方法
JP4276276B2 (ja) 圧電素子の製造方法
CN101583735B (zh) 多层膜形成方法及装置
JP2014072511A (ja) 積層体
WO2010076864A1 (fr) Élément piézoélectrique
WO2010116802A1 (fr) Elément piézoélectrique
JP4894137B2 (ja) 圧電アクチュエータおよびインクジェットヘッドの製造方法
JP2002009359A (ja) 耐久性に優れた一体型圧電／電歪膜型素子およびその製造方法
US20070247782A1 (en) Dielectric device
JP2009209413A (ja) エアロゾルデポジション法の最適実施条件の選定方法、及び成膜方法
JP4094521B2 (ja) 構造物の製造方法
US7771780B2 (en) Method of producing composite material, method of producing piezoelectric actuator, method of producing ink-jet head, and piezoelectric actuator
CN106463608A (zh) Pzt薄膜层叠体和pzt薄膜层叠体的制造方法
JP3340043B2 (ja) 圧電アクチュエータとその製造方法
JP2006229154A (ja) 圧電アクチュエータ、インクジェットヘッド、およびそれらの製造方法
JP2006297915A (ja) 圧電アクチュエータ、インクジェットヘッドおよびそれらの製造方法
JP3207315B2 (ja) 圧電／電歪膜型素子
JP2006261656A (ja) 圧電アクチュエータおよびその製造方法
JP5384843B2 (ja) 圧電素子構造体の製造方法および圧電素子構造体
JP2007088449A (ja) 複合材料膜、圧電アクチュエータ、およびインクジェットヘッドの製造方法、並びに圧電アクチュエータ
JP2009164313A (ja) 電極パターン形成方法及び圧電アクチュエータの製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09836204

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09836204

Country of ref document: EP

Kind code of ref document: A1