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WO2010065332A3 - Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods - Google Patents

Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods Download PDF

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Publication number
WO2010065332A3
WO2010065332A3 PCT/US2009/065219 US2009065219W WO2010065332A3 WO 2010065332 A3 WO2010065332 A3 WO 2010065332A3 US 2009065219 W US2009065219 W US 2009065219W WO 2010065332 A3 WO2010065332 A3 WO 2010065332A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor device
structures including
device structures
associated methods
energy barriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2009/065219
Other languages
French (fr)
Other versions
WO2010065332A2 (en
Inventor
Chandra V. Mouli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to CN200980148547.3A priority Critical patent/CN102239548B/en
Priority to JP2011539583A priority patent/JP2012511256A/en
Publication of WO2010065332A2 publication Critical patent/WO2010065332A2/en
Publication of WO2010065332A3 publication Critical patent/WO2010065332A3/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/299—Channel regions of field-effect devices of FETs of IGFETs having lateral doping variations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/326—Application of electric currents or fields, e.g. for electroforming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/056—Making the transistor the transistor being a FinFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/36—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being a FinFET
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/711—Insulated-gate field-effect transistors [IGFET] having floating bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

A semiconductor device structure includes a transistor with an energy barrier beneath its transistor channel. The energy barrier prevents leakage of stored charge from the transistor channel into a bulk substrate. Methods for fabricating semiconductor devices that include energy barriers are also disclosed.
PCT/US2009/065219 2008-12-05 2009-11-19 Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods Ceased WO2010065332A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200980148547.3A CN102239548B (en) 2008-12-05 2009-11-19 Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods
JP2011539583A JP2012511256A (en) 2008-12-05 2009-11-19 Semiconductor device structure having energy barrier with transistor adjacent to transistor channel and associated method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/329,185 US8330170B2 (en) 2008-12-05 2008-12-05 Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods
US12/329,185 2008-12-05

Publications (2)

Publication Number Publication Date
WO2010065332A2 WO2010065332A2 (en) 2010-06-10
WO2010065332A3 true WO2010065332A3 (en) 2010-08-19

Family

ID=42230126

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/065219 Ceased WO2010065332A2 (en) 2008-12-05 2009-11-19 Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods

Country Status (6)

Country Link
US (3) US8330170B2 (en)
JP (1) JP2012511256A (en)
KR (1) KR20110085002A (en)
CN (1) CN102239548B (en)
TW (1) TWI416722B (en)
WO (1) WO2010065332A2 (en)

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US8330170B2 (en) * 2008-12-05 2012-12-11 Micron Technology, Inc. Semiconductor device structures including transistors with energy barriers adjacent to transistor channels and associated methods
US10008212B2 (en) * 2009-04-17 2018-06-26 The Nielsen Company (Us), Llc System and method for utilizing audio encoding for measuring media exposure with environmental masking
JP6046514B2 (en) * 2012-03-01 2016-12-14 株式会社半導体エネルギー研究所 Semiconductor device
US9214557B2 (en) * 2014-02-06 2015-12-15 Globalfoundries Singapore Pte. Ltd. Device with isolation buffer
US9520498B2 (en) * 2014-03-17 2016-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET structure and method for fabricating the same
KR102269228B1 (en) * 2014-07-31 2021-06-25 삼성전자주식회사 Methods of manufacturing semiconductor devices
KR102621649B1 (en) * 2017-02-08 2024-01-05 삼성전자주식회사 Method for providing activity information of other related to user activity pattern and an electronic device thereof
WO2019005059A1 (en) * 2017-06-29 2019-01-03 Intel Corporation Sub-fin leakage control in semiconductor devices
US10446681B2 (en) 2017-07-10 2019-10-15 Micron Technology, Inc. NAND memory arrays, and devices comprising semiconductor channel material and nitrogen
US11538919B2 (en) * 2021-02-23 2022-12-27 Micron Technology, Inc. Transistors and arrays of elevationally-extending strings of memory cells

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Also Published As

Publication number Publication date
US8878191B2 (en) 2014-11-04
CN102239548A (en) 2011-11-09
TWI416722B (en) 2013-11-21
US20100140709A1 (en) 2010-06-10
WO2010065332A2 (en) 2010-06-10
KR20110085002A (en) 2011-07-26
CN102239548B (en) 2015-05-20
US20150035082A1 (en) 2015-02-05
JP2012511256A (en) 2012-05-17
US8330170B2 (en) 2012-12-11
TW201030970A (en) 2010-08-16
US20130001593A1 (en) 2013-01-03

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