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WO2010064829A2 - Composition de sous-couche antireflet - Google Patents

Composition de sous-couche antireflet Download PDF

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Publication number
WO2010064829A2
WO2010064829A2 PCT/KR2009/007120 KR2009007120W WO2010064829A2 WO 2010064829 A2 WO2010064829 A2 WO 2010064829A2 KR 2009007120 W KR2009007120 W KR 2009007120W WO 2010064829 A2 WO2010064829 A2 WO 2010064829A2
Authority
WO
WIPO (PCT)
Prior art keywords
formula
layer
radiation
underlayer film
antireflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2009/007120
Other languages
English (en)
Korean (ko)
Other versions
WO2010064829A3 (fr
Inventor
윤경호
이진국
전환승
김민수
송지윤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cheil Industries Inc
Original Assignee
Cheil Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cheil Industries Inc filed Critical Cheil Industries Inc
Priority to CN200980148064.3A priority Critical patent/CN102227458B/zh
Publication of WO2010064829A2 publication Critical patent/WO2010064829A2/fr
Publication of WO2010064829A3 publication Critical patent/WO2010064829A3/fr
Priority to US13/151,531 priority patent/US8697341B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L65/00—Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Compositions of derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
    • C08G2261/34—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain
    • C08G2261/342—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing only carbon atoms
    • C08G2261/3424—Monomer units or repeat units incorporating structural elements in the main chain incorporating partially-aromatic structural elements in the main chain containing only carbon atoms non-conjugated, e.g. paracyclophanes or xylenes

Definitions

  • the present invention relates to an underlayer film composition having antireflection useful for lithographic processes.
  • microelectronics industry as well as in other industries, including the fabrication of microscopic structures (eg, micromachines, magnetoresist heads, etc.), there is a continuing need to reduce the size of structural features.
  • microscopic structures eg, micromachines, magnetoresist heads, etc.
  • Lithographic influences the fabrication of microscopic structures in terms of directly imaging a pattern on a given substrate, as well as in manufacturing a mask typically used for such imaging.
  • Typical lithographic processes involve forming a patterned resist layer by patterning exposing the radiation-sensitive resist to imaging radiation. The image is then developed by contacting the exposed resist layer with any material (typically an aqueous alkaline developer). The pattern is then transferred to the backing material by etching the material in the openings of the patterned resist layer. After the transfer is completed, the remaining resist layer is removed.
  • any material typically an aqueous alkaline developer.
  • the pattern is then transferred to the backing material by etching the material in the openings of the patterned resist layer. After the transfer is completed, the remaining resist layer is removed.
  • ARC antireflective coating
  • the resist used does not provide sufficient resistance to subsequent etching steps to effectively transfer a desired pattern to the layer behind the resist.
  • Many practical examples e.g. when ultra thin resist layers are required, when the backing material to be etched is thick, when a significant amount of etching depth is required and / or by using an etchant specific to a given backing material
  • a so-called hardmask layer is used as an intermediate between the resist layer and the backing material which can be patterned by transfer from the patterned resist.
  • the hardmask layer must be able to withstand the etching process required to receive the pattern from the patterned resist layer and transfer the pattern to the backing material.
  • underlayer film compositions Although many hardmask materials exist in the prior art, there is a continuing need for improved underlayer film compositions. Many such prior art materials are difficult to apply to substrates, and therefore may require the use of chemical or physical deposition, special solvents, and / or high temperature firing, for example. It is desirable to have an underlayer film composition that can be applied by spin-coating techniques without the need for high temperature firing. In addition, the underlayer film composition can be easily etched selectively using the upper photoresist layer as a mask, and at the same time resistant to the etching process required to pattern the back layer using the hard mask layer as a mask when the back layer is a metal layer. It is preferable to have.
  • an underlayer composition having certain optical properties for image radiation of shorter wavelengths (eg, 157, 193, 248 nm).
  • One aspect of the invention is a novel underlayer film composition that can be used to perform lithographic techniques using antireflective compositions that have high etch selectivity, sufficient resistance to multiple etching, and minimize reflectivity between the resist and backing layer. It is to provide.
  • Another aspect of the present invention is to provide a method of patterning a backing material layer on a substrate using the underlayer film composition of the present invention.
  • an aromatic ring containing polymer represented by the following formula (1) or (2).
  • n is in the range of 1 ⁇ n ⁇ 250, and R 1 includes any one of the following Formulas 1A.
  • R 1 is in the range of 1 ⁇ n ⁇ 250, R 1 is the same as in formula 1, R 2 comprises any one of the following Formulas 2A and R 3 comprises any one of Formulas 2B):
  • the present invention (a) at least one aromatic ring (aromatic ring) containing polymer represented by the formula (1) or (2); And (b) provides an antireflective underlayer film composition comprising an organic solvent.
  • the underlayer film composition may include (a) 1 to 30% by weight of an aromatic ring (aromatic ring), (b) 70 to 99% by weight of an organic solvent, and the aromatic ring-containing polymer may have a weight average molecular weight of 1,000 to 50,000.
  • a method comprising the steps of: (a) providing a material layer on a substrate; (b) forming an antireflective hardmask layer using the underlayer film composition over the material layer; (c) forming a radiation-sensitive imaging layer over the antireflective hardmask layer; (d) generating a pattern of radiation-exposed areas within the radiation-sensitive imaging layer by patternwise exposing the radiation-sensitive imaging layer to radiation; (e) selectively removing portions of the radiation-sensitive imaging layer and the antireflective hardmask layer to expose portions of the material layer; And (f) forming a patterned material shape by etching the exposed portion of the material layer.
  • the antireflective underlayer film composition according to the present invention has a refractive index and absorbance of a useful range as an antireflection film in a deep UV (DUV) region such as an ArF (193 nm) and KrF (248 nm) wavelength region when forming a film.
  • a deep UV (DUV) region such as an ArF (193 nm) and KrF (248 nm) wavelength region when forming a film.
  • the antireflective underlayer film composition of the present invention comprises an aromatic ring containing polymer having strong absorption in the short wavelength region (157 nm, 193 nm, 248 nm).
  • the aromatic ring-containing polymer may be represented by the following formula (1) or (2).
  • n is in the range of 1 ⁇ n ⁇ 250, and R 1 includes any one of the following Formulas 1A.
  • n is in the range of 1 ⁇ n ⁇ 250
  • R 1 is the same as in formula 1
  • R 2 comprises any one of formulas 2A
  • R 3 comprises any one of formulas 2B.
  • the antireflective underlayer film composition of the present invention comprises: (a) at least one aromatic ring-containing polymer represented by Formula 1 or 2 having strong absorption in a short wavelength region; And (b) an organic solvent.
  • the aromatic ring of the (a) aromatic ring-containing polymer is preferably present in the skeleton portion of the polymer.
  • the aromatic ring-containing polymer causes a self-curing reaction by imidation reaction at -COOH group and -CONH group present in the skeleton during high temperature heat treatment. Therefore, film formation is possible without a separate crosslinking component.
  • this self-curing reaction it has a property of ensuring sufficient chemical resistance as a hard mask layer. And it has a solution and film-forming property which helps to form a layer by conventional spin-coating.
  • the underlayer film composition of the present invention preferably contains an aromatic ring-containing polymer represented by the formula (1) or (2), and satisfies all of the above conditions.
  • the aromatic ring-containing polymer (a) is more preferably about 1,000 to 50,000 based on the weight average molecular weight.
  • the said (a) aromatic ring containing polymer is used in 1-30 weight part with respect to 100 weight part of said (b) organic solvents.
  • the aromatic ring-containing polymer is in the above range, the desired coating thickness can be easily obtained.
  • the organic solvent (b) is not particularly limited as long as it is an organic solvent having sufficient solubility in the (a) aromatic ring-containing polymer.
  • examples thereof include propylene glycol monomethyl ether acetate (PGMEA) and 1-methyl-2-. Pyrrolidinone (1-methyl-2-pyrrolidinone), cyclohexanone, ethyl lactate, ethyl ether acetate, ethyl 3-ethoxy propionate, methyl 3-methoxypropionate ( methyl 3-methoxy propionate), and dimethylsulfoxide.
  • the underlayer film composition of the present invention comprises (a) 1 to 30% by weight of an aromatic ring-containing polymer having strong absorption in the short wavelength region, more preferably 3 to 15% by weight, and (b) 70 to 99 organic solvents. It is preferable to contain the weight percent in order to match the desired coating thickness.
  • the underlayer film composition of this invention may contain additives, such as surfactant, further.
  • the present invention includes a method of patterning a backing material layer on a substrate using the underlayer film composition.
  • the method of forming the patterned material shape on the substrate according to the present invention may be specifically performed as follows. First, a material to be patterned, such as aluminum and SiN (silicon nitride), is formed on a silicon substrate in a conventional manner.
  • the material to be patterned used in the underlayer film composition of the present invention may be any conductive, semiconducting, magnetic or insulating material.
  • a hard mask layer is formed by spin-coating to a thickness of 500 Pa to 4000 Pa using the underlayer film composition of the present invention, and baked at 100 ° C. to 300 ° C. for 10 seconds to 30 minutes to form a hard mask layer.
  • a radiation-sensitive imaging layer is formed, and a development process of exposing an area where a pattern is to be formed is performed by an exposure process through the imaging layer. Subsequently, the imaging layer and the antireflective layer are selectively removed to expose portions of the material layer, and generally dry etching is performed using a CHF 3 / CF 4 mixed gas or the like. After the patterned material shape is formed, any remaining resist can be removed by conventional photoresist strippers. By this method, a semiconductor integrated circuit device can be provided.
  • compositions of the present invention and formed lithographic structures can be used in the manufacture and design of integrated circuit devices in accordance with semiconductor fabrication processes. For example, it can be used to form patterned material layer structures, such as metal wiring, holes for contacts or bias, insulating sections (e.g., damascene trenches or shallow trench isolations), trenches for capacitor structures, and the like. Can be. It is also to be understood that the invention is not limited to any particular lithographic technique or device structure.
  • the residual ethanol was then removed by rotary evaporation at 60 ° C. for 20 minutes.
  • the molecular weight and the polydispersity of the obtained copolymer were measured by GPC under tetrahydrofuran to obtain a polymer represented by the following formula (4) having a molecular weight of 9,000 degree of dispersion of 1.8.
  • MAK methylamyl ketone
  • sample solutions prepared in Examples 1 and 2 and Comparative Example 1 were respectively coated on a silicon wafer by spin-coating to bake at 250 ° C. for 180 seconds to form a film having a thickness of 3500 mm 3.
  • Refractive index n and extinction coefficient k of the formed films were obtained, respectively.
  • the instrument used was Ellipsometer (J. A. Woollam) and the measurement results are shown in Table 1.
  • the film formed from the composition of the present invention had refractive index and absorbance which can be used as antireflection films at ArF (193 nm) and KrF (248 nm) wavelengths.
  • the film formed from the composition of Comparative Example showed low absorption at KrF (248 nm) wavelength.
  • sample solutions prepared in Examples 1 and 2 and Comparative Example 1 were coated on a silicon wafer coated with aluminum by spin-coating, and baked at 250 ° C. for 60 seconds to form a film having a thickness of 3500 mm 3.
  • Each film formed was coated with KrF photoresist, baked at 110 ° C. for 60 seconds, and exposed to light using an ASML (XT: 1400, NA 0.93) exposure apparatus, and then developed with TMAH (2.38 wt% aqueous solution). And using a FE-SEM to examine the line and space (line and space) pattern of 90nm, respectively, as shown in Table 2 below.
  • the exposure latitude (EL) margin according to the change of the exposure dose and the depth of focus (DoF) margin according to the distance change with the light source are considered and recorded in Table 2.
  • the film formed from the composition of this invention was able to confirm the favorable result in terms of a pattern profile and a margin.
  • the results were found to be relatively disadvantageous in terms of pattern profile and margin. This is believed to be due to the difference in absorption characteristics at KrF (248 nm) wavelength.
  • the film formed from the composition of the comparative example was able to confirm the taper phenomenon in the etch profile. This may be due to the lack of selectivity under the etch conditions.

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)

Abstract

La présente invention concerne une composition de sous-couche présentant des propriétés antireflet qui sont utiles en traitement lithographique. La composition selon la présente invention confèrent des caractéristiques optiques, des caractéristiques mécaniques et des caractéristiques de rapport de sélectivité d'attaque chimique très exceptionnelles tout en conférant dans le même temps une caractéristique telle que l'enduction peut être effectuée en utilisant la technique de dépôt à la tournette. Avantageusement, la composition de la présente invention est utilisée en lithographie à longueur d'onde relativement courte et a une teneur d'acide résiduel minimale.
PCT/KR2009/007120 2008-12-02 2009-12-01 Composition de sous-couche antireflet Ceased WO2010064829A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200980148064.3A CN102227458B (zh) 2008-12-02 2009-12-01 具有抗反射特性的下层组合物
US13/151,531 US8697341B2 (en) 2008-12-02 2011-06-02 Aromatic ring containing polymer, underlayer composition including the same, and associated methods

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080121350A KR101156489B1 (ko) 2008-12-02 2008-12-02 반사방지 하드마스크 조성물
KR10-2008-0121350 2008-12-02

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US13/151,531 Continuation US8697341B2 (en) 2008-12-02 2011-06-02 Aromatic ring containing polymer, underlayer composition including the same, and associated methods

Publications (2)

Publication Number Publication Date
WO2010064829A2 true WO2010064829A2 (fr) 2010-06-10
WO2010064829A3 WO2010064829A3 (fr) 2010-08-26

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Country Link
US (1) US8697341B2 (fr)
KR (1) KR101156489B1 (fr)
CN (1) CN102227458B (fr)
TW (1) TWI411628B (fr)
WO (1) WO2010064829A2 (fr)

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KR101432605B1 (ko) * 2010-12-16 2014-08-21 제일모직주식회사 하드마스크 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
KR101344792B1 (ko) 2010-12-17 2013-12-24 제일모직주식회사 하드마스크 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
SG11201401430RA (en) * 2011-10-10 2014-09-26 Brewer Science Inc Spin-on carbon compositions for lithographic processing
KR101556276B1 (ko) 2012-12-28 2015-09-30 제일모직 주식회사 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
KR101682021B1 (ko) * 2013-03-20 2016-12-02 제일모직 주식회사 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
KR101667788B1 (ko) 2013-12-31 2016-10-19 제일모직 주식회사 하드마스크 조성물 및 이를 사용한 패턴 형성 방법
KR101788093B1 (ko) * 2014-03-19 2017-10-19 제일모직 주식회사 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법

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KR100655064B1 (ko) * 2005-05-27 2006-12-06 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물
KR100671120B1 (ko) * 2005-07-28 2007-01-17 제일모직주식회사 신규 플루오렌 중합체 및 이를 이용한 반사방지성을 갖는하드마스크 조성물
KR100836675B1 (ko) 2006-12-20 2008-06-10 제일모직주식회사 반사방지 하드마스크 조성물, 이를 이용한 패턴화된 재료형상의　제조방법 및 반도체 집적회로 디바이스
KR100896451B1 (ko) 2006-12-30 2009-05-14 제일모직주식회사 카본 함량이 개선된 고 내에칭성 반사방지 하드마스크조성물, 이를 이용한 패턴화된 재료 형상의　제조방법
SG11201401430RA (en) * 2011-10-10 2014-09-26 Brewer Science Inc Spin-on carbon compositions for lithographic processing

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WO2010064829A3 (fr) 2010-08-26
CN102227458B (zh) 2014-07-16
US8697341B2 (en) 2014-04-15
TWI411628B (zh) 2013-10-11
US20110229828A1 (en) 2011-09-22
KR20100062629A (ko) 2010-06-10
TW201030054A (en) 2010-08-16
KR101156489B1 (ko) 2012-06-18

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