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WO2010058629A1 - Dispositif d’affichage à cristaux liquides et dispositif électronique - Google Patents

Dispositif d’affichage à cristaux liquides et dispositif électronique Download PDF

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Publication number
WO2010058629A1
WO2010058629A1 PCT/JP2009/063606 JP2009063606W WO2010058629A1 WO 2010058629 A1 WO2010058629 A1 WO 2010058629A1 JP 2009063606 W JP2009063606 W JP 2009063606W WO 2010058629 A1 WO2010058629 A1 WO 2010058629A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
liquid crystal
semiconductor layer
crystal display
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2009/063606
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English (en)
Japanese (ja)
Inventor
淳人 村井
元 今井
英樹 北川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to US13/130,253 priority Critical patent/US20110222011A1/en
Publication of WO2010058629A1 publication Critical patent/WO2010058629A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars

Definitions

  • the present invention relates to a liquid crystal display device incorporating an optical sensor.
  • a photodiode (photoelectric element) is generally used as an optical sensor.
  • the sensitivity of this photodiode is generally expressed as S (signal) / N (noise). That is, if the value of S / N is large, the sensitivity is good.
  • Patent Document 1 discloses a technique for reducing SNR due to light incident on a photosensor and improving S / N. It is disclosed. That is, in the technique disclosed in Patent Document 1, the photocurrent indicating N (noise) in the S / N indicating the sensitivity of the photodiode is reduced to improve the sensitivity.
  • a groove surrounding the periphery of the sensor unit is formed, and a light shielding material or a light absorbing material is embedded in the groove.
  • Patent Document 2 describes the incident of light (stray light) other than light that is originally incident on the image sensor by surrounding the image sensor (photosensor) with a light-shielding insulating layer. A configuration to reduce is disclosed.
  • Patent Document 3 in order to improve the sensitivity of the photoelectric conversion element (photosensor), a light collector (lens) is provided on the light incident side of the photoelectric conversion element, and incident light is incident on the photoelectric conversion element.
  • a technique for condensing light is disclosed.
  • the above-described light shielding body is formed so as to surround the optical sensor portion, there is a space without any liquid crystal material inside, and problems are likely to occur in manufacturing. For example, there is a concern that the liquid crystal material may penetrate into the space. As described above, since the liquid crystal material permeates into the space, as a result, the liquid crystal exists on the optical sensor unit, so that the light affected by the alignment state of the liquid crystal is incident on the optical sensor. Therefore, there arises a problem that the sensitivity as an optical sensor is lowered.
  • Patent Document 3 since a light shielding body is not provided around the photoelectric conversion element, even if incident light is collected by the light collecting body, the light transmitted through the adjacent light collecting body or condensed light is collected.
  • the light incident obliquely between the body and the light collector may be incident on the photoelectric conversion element as stray light, which may result in a decrease in light detection sensitivity when the photoelectric conversion element is a photosensor. Occurs.
  • the present invention has been made in view of the above-described problems, and an object of the present invention is to provide an optical sensor (photoelectric sensor) having a simple configuration that is not affected by the alignment state of the liquid crystal and that is less susceptible to noise caused by stray light. It is to realize a liquid crystal display device provided with an element.
  • the liquid crystal display device is a liquid crystal display device in which liquid crystal is sealed between a TFT array substrate and a counter substrate.
  • a photoelectric element that generates a current of a magnitude corresponding to the light-receiving element is formed, and a light transmitting member having a solid structure sandwiched between the TFT array substrate and the counter substrate is formed on the light-receiving surface of the photoelectric element. It is a feature.
  • the light transmitting member having a solid structure sandwiched between the TFT array substrate and the counter substrate is formed on the light receiving surface of the photoelectric element. Light transmitted through the transmissive member is incident.
  • the light transmission member is sandwiched between the TFT array substrate and the counter substrate, there is no liquid crystal layer between the light transmission member and the counter substrate and between the light transmission member and the TFT array substrate. Moreover, since the light transmission member has a solid structure, the liquid crystal material from the liquid crystal layer does not enter the light transmission member. For these reasons, light is incident on the light receiving surface of the photoelectric element without interposing a liquid crystal.
  • the photoelectric element since the photoelectric element receives light that is not affected by the alignment state of the liquid crystal, an appropriate current corresponding to the intensity of the incident light can be generated.
  • the light transmitting member has a solid structure
  • the structure is simple as in the prior art, and can be manufactured by a simple process.
  • liquid crystal display device including a photoelectric sensor having a high detection sensitivity that is not affected by the alignment state of the liquid crystal and is not easily affected by stray light.
  • the light transmitting member is preferably formed above the photoelectric element and in a region where the current changes due to the influence of light.
  • the light transmitting member is preferably arranged so as to cover at least a semiconductor layer region constituting the photoelectric element.
  • the semiconductor layer region functioning as the light receiving surface in the photoelectric element is covered with the light transmitting member, only light incident from the light transmitting member that does not reliably receive the alignment state of the liquid crystal is incident on the photoelectric element. Become. Thereby, the detection sensitivity by a photoelectric element can further be improved.
  • the following three types can be given.
  • the photoelectric element has a TFT structure having at least a gate electrode, a gate insulating film, a semiconductor layer, a contact layer of a source electrode and a drain electrode, a source electrode, and a drain electrode
  • the light transmission The member may be formed at least in a region where the gate electrode and the semiconductor layer overlap with each other, and in a region where a light shielding body such as a source electrode and a drain electrode is not disposed.
  • the photoelectric element comprises at least a p-type semiconductor layer, an i-type semiconductor layer, an n-type semiconductor layer, and electrodes connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively, and the p-type,
  • the light transmission member includes at least the semiconductor layer and the electrodes, etc. What is necessary is just to form in the area
  • the photoelectric element includes at least a p-type semiconductor layer, an i-type semiconductor layer, an n-type semiconductor layer, and electrodes connected to the p-type semiconductor layer and the n-type semiconductor layer, respectively, and the p-type
  • the light transmission member is at least the p-type, i-type, and n-type semiconductor. Of the layers, it may be formed above the semiconductor layer closest to the light incident side.
  • the light transmitting member may also serve as a spacer for determining a gap between the TFT array substrate and the counter substrate.
  • the step of forming the spacer becomes the step of forming the light transmissive member, the liquid crystal display in which the light transmissive member is formed on the photoelectric element without changing the number of steps of manufacturing the liquid crystal display device so far.
  • the device can be manufactured.
  • a color filter may be formed between the light transmitting member and the counter substrate.
  • the light incident from the counter substrate is transmitted through the color filter and is incident on the light transmitting member. Therefore, the light is easily incident on the photoelectric element simply by adjusting the transmission wavelength by the color filter.
  • the transmission wavelength of the light to be determined can be determined.
  • the light transmitting member preferably contains at least a photosensitive resin material.
  • the light transmitting member can be easily formed by patterning using a photolithography method.
  • the photosensitive resin material itself has a characteristic of transmitting / absorbing light of a specific wavelength, and the photosensitive resin material is assigned patterning characteristics by a photolithography method so that light of a specific wavelength can be obtained.
  • the transmission wavelength of the light transmitting member can be determined by an easy method such as a method of mixing a material that transmits / absorbs light (specifically, a color filter pigment or the like is mixed). Get higher.
  • the light transmitting member is preferably made of a material having a higher refractive index than the liquid crystal.
  • the stray light from the liquid crystal is partially reflected by the light transmitting member due to the refractive index difference between the light transmitting member and the liquid crystal, so that the stray light can be prevented from entering the photoelectric element.
  • the light transmitting member preferably contains a light absorbing material that absorbs light of a specific wavelength.
  • liquid crystal display device having the above configuration can be applied to various electronic devices, and is particularly suitable for an electronic device equipped with a touch panel or a scanner.
  • the liquid crystal display device is a liquid crystal display device in which liquid crystal is sealed between a TFT array substrate and a counter substrate.
  • a photoelectric element that generates a current of a magnitude is formed, and a light transmitting member having a solid structure sandwiched between the TFT array substrate and the counter substrate is formed on the light receiving surface of the photoelectric element.
  • FIG. 3 is an equivalent circuit diagram corresponding to one pixel in the liquid crystal display device shown in FIG. 2.
  • FIG. 3 is a plan view of one pixel in the liquid crystal display device shown in FIG. 2.
  • FIG. 5 is a cross-sectional view taken along line AA ′ of one pixel shown in FIG. 4.
  • FIG. 5 is a cross-sectional view of one pixel shown in FIG. 4 taken along line BB ′.
  • FIG. 5 is a cross-sectional view of one pixel shown in FIG. FIG.
  • FIG. 3 is a diagram showing each step on the active matrix substrate side in the method for manufacturing the liquid crystal display device shown in FIG. 2. It is a figure which shows each process by the side of a counter substrate in the manufacturing method of the liquid crystal display device shown in FIG. It is a schematic sectional drawing of the transmissive member vicinity of the liquid crystal display device which concerns on other embodiment of this invention. It is a schematic sectional drawing of the transmissive member vicinity of the liquid crystal display device which concerns on further another embodiment of this invention. It is a schematic sectional drawing of the transmissive member vicinity of the liquid crystal display device which concerns on other embodiment of this invention. (A) (b) is a figure for demonstrating the arrangement position of the light transmissive member in case a photoelectric element is a TFT type structure.
  • (A) (b) is a figure for demonstrating the arrangement position of the light transmissive member in case the photoelectric element is a lateral-structure pin photodiode.
  • (A) (b) is a figure for demonstrating the arrangement position of the light transmissive member in case a photoelectric element is a pin photodiode of a vertical structure.
  • (A) (b) is a figure which shows the comparative example for demonstrating the effect of this invention.
  • (A) (b) is a figure for demonstrating the effect of this invention.
  • (A) (b) is a figure for demonstrating the effect of this invention. It is a block diagram which shows the principal part structure of the conventional liquid crystal display device.
  • an embodiment of the present invention will be described as follows.
  • an example in which the display device of the present invention is applied to a liquid crystal display device with a built-in optical sensor touch panel hereinafter referred to as an optical sensor TP system
  • an optical sensor TP system a built-in optical sensor touch panel
  • the optical sensor TP system is a display circuit that is a circuit for causing the display panel 101 to perform display around the display panel 101 including a photoelectric element as an optical sensor.
  • the scanning signal line driving circuit 102 and the display video signal line driving circuit 103, the sensor scanning signal line driving circuit 104 and the sensor reading circuit 105 which are circuits for causing the display panel 101 to function as a touch panel, and the sensor reading circuit 105.
  • a sensing image processing LSI 107 PC (including software) for indexing the touched coordinates from the sensing data from, and a power supply circuit 106.
  • the liquid crystal display device illustrated in FIG. 2 is an example, and is not limited to this configuration.
  • the sensor scanning signal line driver circuit 104 and the sensor readout circuit 105 are other circuits, specifically, display scanning.
  • the function may be included in the signal line driver circuit 102, the display video signal line driver circuit 103, or the like, and the sensor readout circuit 105 may be included in the function of the sensing image processing LSI 107.
  • the display panel 101 has a configuration in which a liquid crystal layer 300 is sandwiched between a counter substrate 100 and a TFT array substrate 200 as shown in FIGS. 1A and 1B show schematic cross sections of one pixel.
  • a display driving TFT (Thin Film Transistor) element 20 for driving a pixel electrode (not shown) is formed, and a photoelectric current that generates a current corresponding to the intensity of the irradiated light is generated.
  • a photodiode 17 as an element is formed, and a light transmitting member 15 having a solid structure sandwiched between the TFT array substrate 200 and the counter substrate 100 is formed on the light receiving surface of the photodiode 17.
  • the photodiode 17 receives a certain amount of light regardless of the alignment state of the liquid crystal. It becomes possible to do.
  • the light transmitting member 15 is sandwiched between the TFT array substrate 200 and the counter substrate 100, the cell thickness gap can be adjusted. For this reason, since the light transmission member 15 can be substituted for the spacer, the cost increase due to the provision of the light transmission member 15 does not occur.
  • the light transmitting member 15 is formed using, for example, at least a photosensitive resin material.
  • a resin material having photosensitivity or a material to be mixed may be appropriately selected in accordance with the sensitivity of the photodiode 17, the light wavelength to be transmitted, and the like.
  • the degree of freedom of material selection for forming the member 15 is high.
  • the desired function may be realized only by the resin material, the resin material and, for example, a light-absorbing material may be “mixed” to express the desired function.
  • the light transmissive member 15 when the light transmissive member 15 is selected based on the above conditions, the light transmissive member 15 that is not colored can be formed, for example, as shown in FIG. As shown in b), a colored light transmission member 15 can also be formed.
  • FIG. 3 shows an equivalent circuit of one pixel in which a part of the display panel 101 shown in FIG. 2 is enlarged.
  • the display panel 101 is assumed to be an active matrix liquid crystal display panel in which pixels are arranged in a matrix and each pixel is driven independently.
  • the notation of n, n + 1, m, and m + 1 at the end of each wiring represents the nth line, the n + 1th line, the mth line, and the m + 1th line.
  • each pixel X of the display panel 101 is provided with a gate wiring Gn, a source wiring Sm, and an auxiliary capacitance wiring Csn as display wirings, and a photodiode circuit as a detection circuit wiring.
  • a reset wiring Vrstn, a NetA voltage-boost capacitor wiring Vrwn, a voltage supply wiring Vsm to the output AMP, and an optical sensor output wiring Vom are provided.
  • the gate wiring Gn is a wiring for supplying a scanning signal from the display scanning signal line driving circuit 102 to the display driving TFT element 20, and the source wiring Sm is orthogonal to the gate wiring Gn.
  • the wiring is arranged to supply a video signal from the display video signal line drive circuit 103 to the display drive TFT element 20.
  • the auxiliary capacitance line Csn is arranged in parallel with the gate line Gn and is connected to the auxiliary capacitance Cs formed in the display driving TFT element 20.
  • the photodiode reset wiring Vrstn is arranged in parallel with the gate wiring Gn, is connected to the anode side of the photodiode 17, and supplies a reset signal from the sensor scanning signal line drive circuit 104. Wiring.
  • the NetA voltage-boost capacitor wiring Vrwn is arranged in parallel with the gate wiring Gn, and is connected to the cathode side node of the photodiode 17; Is connected to the opposite electrode.
  • the voltage supply wiring Vsm to the output AMP is arranged in parallel with the source wiring Sm and connected to the source electrode of the output AMP.
  • the optical sensor output wiring Vom is a wiring for outputting an output signal from the output AMP, which changes in accordance with the amount of light received by the photodiode 17, to the sensor readout circuit 105.
  • the optical sensor output wiring Vom is arranged in parallel with the source wiring Sm and connected to the drain electrode of the output AMP.
  • the light transmitting member 15 is disposed on the photodiode 17 as shown in FIG.
  • FIG. 4 is a plan view showing the equivalent circuit of one pixel shown in FIG. 3 with a specific wiring structure.
  • FIG. 4 shows the wiring and element structure on the TFT array substrate 200 side.
  • the counter substrate side is omitted.
  • FIG. 5 shows a cross-sectional view of one pixel shown in FIG.
  • FIG. 6 shows a cross-sectional view of one pixel shown in FIG.
  • FIG. 7 shows a cross-sectional view of one pixel shown in FIG.
  • Reference numeral 1 is an insulating substrate
  • reference numeral 2 is a gate electrode and gate wiring
  • reference numeral 3 is a gate insulating film
  • reference numeral 4 is a semiconductor layer (a-Si)
  • reference numeral 5 is a contact layer (n + a-Si)
  • reference numeral 6 is a drain.
  • Reference numeral 7 denotes a source electrode and wiring
  • reference numeral 8 denotes an auxiliary capacitance wiring
  • reference numeral 9 denotes a passivation film
  • reference numeral 10 denotes an interlayer insulating film
  • reference numeral 11 denotes a pixel electrode
  • reference numeral 12 denotes a counter electrode
  • reference numeral 13 denotes a light shielding film.
  • 14 is a polarizing plate
  • 15 is a light transmitting member
  • 16 is a contact hole
  • 17 is a photodiode
  • 18 is a NetA voltage-boosting capacitor
  • 19 is an output AMP
  • 20 is a pixel driving TFT
  • 21 is a color filter
  • 22 is a photodiode gate electrode and wiring (Vrst wiring)
  • 23 is a photodiode drain electrode and wiring
  • 24 denotes a source electrode and a wiring of the photodiode
  • reference numeral 25 denotes a Vrw wiring.
  • the light transmitting member 15 includes the counter electrode 12 on the insulating substrate 1 on the counter substrate 100 side facing from the photodiode 17 formed on the insulating substrate 1 on the TFT array substrate 200 side. It is a columnar structure extended in The light transmission member 15 is formed of a photosensitive resin material and has a solid structure. Details of the arrangement position of the light transmitting member 15 will be described later.
  • the A-A ′ section in FIG. 4 relating to the formation of the photodiode is described, and the B-B ′ section and the C-C ′ section are omitted.
  • the manufacturing process from the TFT array substrate 200 side will be described first, and then the manufacturing process from the counter substrate side will be described.
  • FIG. 8 is a diagram showing a manufacturing process of the display panel 101 on the TFT array substrate 200 side.
  • a metal layer such as Ti / Al / Ti is formed on the insulating substrate 1 by a sputtering method with a thickness of about 250 nm, and a gate electrode / wiring of a photodiode which becomes a photoelectric element by a photolithography method. (Vrst wiring) 22 is formed.
  • a gate insulating film silicon nitride: SiNx
  • an n + a-Si layer 5 of about 50 nm are continuously formed by plasma CVD. Pattern into islands by the method.
  • the gate insulating film 3 is etched into a predetermined pattern by a photolithography method in order to form the contact hole 16, the wiring lead-out terminal pad portion (not shown) of the gate wiring and the source wiring.
  • a metal layer of Ti / Al / Ti or the like is continuously formed by sputtering to a thickness of about 250 nm, and the source electrode / wiring 24 of the photodiode, the photo layer is formed by photolithography.
  • a drain electrode / wiring 23 of the diode is formed.
  • the gate electrode / wiring (Vrst wiring) 22 of the photodiode and the source electrode / wiring 24 of the photodiode are electrically connected by the contact hole 16 formed in the step of FIG.
  • channel portions of an a-Si layer: 6 and an n + a-Si layer: 7 are formed by a dry etching method using a gas containing SF6.
  • the photodiode 17 is formed by the above method.
  • a silicon nitride film is formed as a passivation film 9 by a plasma CVD method to a thickness of about 350 nm, and subsequently a low dielectric constant photosensitive resin is formed by a spin method to 2500-4500 nm.
  • a contact hole 16 (not shown) for electrically connecting the pixel electrode 11 and the drain electrode / wiring 6 and a wiring lead-out terminal for the gate wiring and the source wiring by forming the film to the extent that the photosensitive resin is photolithographically used.
  • a pad portion (not shown) is formed to form the interlayer insulating film 10.
  • the passivation film 9 is etched by a dry etching method using a gas containing CF 4 / O 2.
  • a transparent conductive film made of ITO is formed on the interlayer insulating film 10 by a sputtering method with a thickness of about 100 nm, and the pixel electrode 11 is etched into a predetermined pattern by a photolithography method (not shown). ).
  • the TFT array substrate 200 of the present invention can be manufactured by the above method.
  • FIG. 9 is a diagram showing a manufacturing process of the display panel 101 on the counter substrate 100 side.
  • a resin film having both UV curable properties and thermosetting properties and having light shielding properties is obtained at 100 ° C. Laminating on the insulating substrate 1 while raising the temperature back and forth, the resin (film thickness: approximately 1600 nm) is transferred.
  • UV light containing light having a wavelength of 365 nm is irradiated from the resin side (front side) at approximately 70 mJ / cm 2 (inspection wavelength: 365 nm) to develop the resin.
  • the light shielding film 13 is formed by baking at 220 ° C. for about 1 hour.
  • each color (R, G, B) is formed in a desired pattern (not shown).
  • a transparent conductive film made of ITO is formed to a thickness of about 100 nm by a sputtering method, a mask vapor deposition method, or the like to form the counter electrode 12.
  • a photosensitive resin film having optical transparency to ultraviolet light, visible light, and infrared light film thickness: approximately 3500 nm, refractive index: approximately 1.5.
  • the film is laminated and transferred onto the insulating substrate 1 on which the light shielding film 13 and the color filter 21 are formed while the temperature is raised to about 100 ° C.
  • the resin side (front side) is irradiated with ultraviolet rays (UV light) containing light having a wavelength of 365 nm at about 70 mJ / cm 2 (inspection wavelength: 365 nm) to develop the resin.
  • UV light ultraviolet rays
  • the light transmission member 15 is formed by baking at 220 ° C. for about 1 hour.
  • the said resin material used what removed the color material from the resin film used for the said color filter 21.
  • the display panel 101 shown in FIG. 9C can be manufactured.
  • the display panel 101 having the above configuration, since the liquid crystal material does not exist on the light transmitting member 15, the intensity of incident light to the photodiode 17 can be made constant regardless of the alignment state of the liquid crystal. In addition, since the light transmitting member 15 also serves as a cell gap defining spacer, the display panel 101 can be manufactured without increasing the cost.
  • a material considering the wavelength-absorption characteristic (sensitivity) and display quality (external light reflection by the material) of the photodiode 17 may be selected, and the degree of freedom in material selection is high.
  • FIG. 10 is a diagram illustrating an example in which the light transmitting member 15 is colored.
  • the light transmitting property can be adjusted. This can be realized without adding a special manufacturing method.
  • the color filter 21 can be arranged.
  • FIG. 11 shows an example in which a color filter 21 is provided in the same layer as the light shielding film 13.
  • FIG. 12 is a diagram illustrating an example in which the color filter 21 illustrated in FIG. 11 has a two-layer structure.
  • the color filter 21 may be provided in two layers. Needless to say, three layers may be used. In this case, the two layers of color filters 21 may be the same color or different colors, and may be arranged by appropriately combining colors as necessary.
  • TFTs are required to have high liquid crystal driving characteristics / pixel potential holding characteristics, and photodiodes are required to have high photosensitivity characteristics.
  • the reason for coloring the light transmitting member 15 is to color the light transmitting member 15 in order to reduce the sensitivity when the photosensitivity of the photodiode is too high.
  • a material for forming the light transmission member 15 for example, (1) in order to cut infrared rays from outside light when considering use under strong outside light Select a material that cuts infrared rays, or (2) If you want to suppress stray light as much as possible, select a material that is colored / highly light-absorbing, or select a material that has a large refractive index difference from the liquid crystal material. Or just choose.
  • the light transmissive member 15 when considering the use of the display panel 101 under strong external light, it is preferable to form the light transmissive member 15 by mixing materials that cut infrared rays in order to cut infrared rays from the external light. Examples of such a material include heat ray absorbing resin / polycarbonate.
  • the light transmitting member 15 is preferably arranged on the photodiode 17 so as to cover the entire formation region of the photodiode 17. However, the light transmitting member 15 is affected by the light above the photodiode 17 and the current is increased. What is necessary is just to arrange
  • the light transmitting member 15 only needs to be disposed so as to cover at least the semiconductor layer region constituting the photodiode 17.
  • the semiconductor layer region functioning as the light receiving surface in the photodiode 17 is covered by the light transmitting member 15, so that only light incident from the light transmitting member that does not reliably receive the alignment state of the liquid crystal is incident on the photodiode 17. Will be. Thereby, the detection sensitivity by the photodiode 17 can be further improved.
  • the following three types will be described as the structural type of the photoelectric element as the photodiode 17.
  • FIG. 13, FIG. 14 and FIG. 15 are diagrams showing the arrangement positions of the light transmitting members resulting from the structural differences of the photoelectric elements.
  • FIG. 13 are diagrams showing regions where the light transmission member 15 is to be arranged when the photoelectric element has a TFT structure.
  • the light transmitting member 15 is provided with at least a region where the gate electrode 22 and the semiconductor layer 4 overlap, and a light shielding body such as an electrode. What is necessary is just to arrange
  • the gate electrode and the source electrode are connected via a contact hole.
  • a configuration may be adopted in which individual voltages are input independently of each other from the electrode and the source electrode. Note that the voltage can be simplified to one system (Vrst) by connecting the gate electrode and the source electrode.
  • FIGS. 14A and 14B are diagrams showing regions where the light transmitting member 15 is to be disposed when the photoelectric element is a lateral pin photodiode.
  • the light transmission member 15 may be disposed at least above the i-type semiconductor layer and in a region where a light shielding body such as an electrode is not disposed. .
  • FIGS. 15A and 15B are diagrams showing regions where the light transmitting member 15 is to be arranged when the photoelectric element is a vertical structure pin photodiode.
  • the light transmitting member 15 is at least above the semiconductor layer closest to the light incident side among the p-type, i-type, and n-type semiconductor layers. What is necessary is just to arrange
  • 16 (a) and 16 (b) are diagrams showing comparative examples of the present invention.
  • the liquid crystal layer 300 is also formed above the photodiode 17 on the TFT array substrate 200.
  • the liquid crystal on the photodiode 17 is aligned in the black display state, and external light is less likely to be transmitted through the liquid crystal. The amount is reduced.
  • the liquid crystal on the photodiode 17 is aligned in the white display state, and the external light is transmitted through the liquid crystal as it is. If the irradiation intensity of external light is the same as the black state shown in FIG. 16A, the amount of light received by the photodiode 17 increases.
  • 17 (a) and 17 (b) are diagrams showing the present invention.
  • the light transmission member 15 is formed above the photodiode 17 on the TFT array substrate 200.
  • the light transmission member 15 is disposed between the TFT array substrate 200 and the counter substrate 100 and above the photodiode 17.
  • the external light is not subjected to the alignment state of the liquid crystal. Therefore, if the external light has the same illuminance, the intensity of incident light from directly above the photodiode 17 is always constant.
  • a liquid crystal material is placed on the photodiode 17 even in the case of black display or in the case of white display as shown in FIG. Therefore, if the external light irradiation intensity is the same, the incident intensity to the photodiode 17 is always constant, and stable detection can be performed.
  • stray light not only incident light from above but also light from the liquid crystal display region side may be incident on the photodiode 17 and detected as noise.
  • the light in this case is called stray light.
  • FIG. 18 are diagrams showing a comparison regarding handling of stray light.
  • FIG. 18A shows a comparative example in which the light transmissive member 15 is not provided on the photodiode 17, and FIG. 18B shows the present invention in which the light transmissive member 15 is provided on the photodiode 17. .
  • the light transmitted through the liquid crystal layer 300 on the display driving TFT element 20 is incident on the photodiode 17 as it is. Stray light due to irregular reflection inside the panel easily enters the photodiode 17.
  • the light transmission member 15 is made of a material having a refractive index larger than that of the liquid crystal layer 300.
  • the refractive index of the liquid crystal material is about 1.4
  • the refractive index is about 1.5 when the light transmitting member 15 is made of a polymer made of a material obtained by removing the color material from the color filter material. ⁇ 1.6.
  • the stray light from the liquid crystal layer 300 is reflected by the light transmission member 15 using this refractive index difference.
  • polymer polymer examples include alkali-soluble carboxylic acid derivative polymers and novolak resins.
  • the refractive index difference may be used, but stray light to the photodiode 17 can also be reduced by using a light-absorbing material for the light transmitting member 15.
  • the material of the light transmitting member 15 absorbs light of a specific wavelength such as the case of using the color filter material described above as the light absorbing material or an epoxy-based visible light absorbing resin.
  • the light-absorbing material which can be mentioned can be mentioned.
  • the present invention is suitably used for an electronic device equipped with a touch panel.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Human Computer Interaction (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)

Abstract

L’invention concerne un dispositif d’affichage à cristaux liquides comprenant une couche de cristaux liquides (300) formée entre un substrat de réseaux TFT (200) et un substrat opposé (100). Sur le substrat de réseaux TFT (200) est formée une photodiode (17) qui génère un courant ayant une intensité qui est fonction de l’intensité de la lumière d’illumination. La photodiode (17) possède une surface de réception de la lumière sur laquelle est formé un élément de transmission de lumière (15) pris en sandwich entre le substrat de réseaux TFT (200) et le substrat opposé (100). Ainsi il est possible d’obtenir un dispositif d’affichage à cristaux liquides de structure simple ayant un photo-détecteur (élément photoélectrique) hautement sensible qui n’est pas affecté par l’état d’orientation du cristal liquide.
PCT/JP2009/063606 2008-11-21 2009-07-30 Dispositif d’affichage à cristaux liquides et dispositif électronique Ceased WO2010058629A1 (fr)

Priority Applications (1)

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US13/130,253 US20110222011A1 (en) 2008-11-21 2009-07-30 Liquid crystal display device and electronic device

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JP2008298689 2008-11-21
JP2008-298689 2008-11-21

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WO2010058629A1 true WO2010058629A1 (fr) 2010-05-27

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JP2011242761A (ja) * 2010-04-23 2011-12-01 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
KR20150007301A (ko) * 2012-04-11 2015-01-20 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 투명 전극을 갖춘 사용자 인터페이스 장치
JP2018040806A (ja) * 2010-10-07 2018-03-15 株式会社半導体エネルギー研究所 光検出回路、液晶表示素子及び表示素子
US10126933B2 (en) 2012-10-15 2018-11-13 Commissariat à l'Energie Atomique et aux Energies Alternatives Portable appliance comprising a display screen and a user interface device
US10203811B2 (en) 2012-09-12 2019-02-12 Commissariat A L'energie Atomique Et Aux Energies Non-contact user interface system
JP2022053996A (ja) * 2020-09-25 2022-04-06 セイコーエプソン株式会社 電気光学装置および電子機器

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CN107479760B (zh) * 2017-09-22 2021-09-24 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板和显示系统

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JP2011242761A (ja) * 2010-04-23 2011-12-01 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
JP2018040806A (ja) * 2010-10-07 2018-03-15 株式会社半導体エネルギー研究所 光検出回路、液晶表示素子及び表示素子
KR20150007301A (ko) * 2012-04-11 2015-01-20 꼼미사리아 아 레네르지 아토미끄 에뜨 옥스 에너지스 앨터네이티브즈 투명 전극을 갖춘 사용자 인터페이스 장치
JP2015515693A (ja) * 2012-04-11 2015-05-28 コミサリア ア エナジー アトミック エ オックス エナジーズ オルタネティヴ 透明電極を有するユーザインタフェースデバイス
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US10203811B2 (en) 2012-09-12 2019-02-12 Commissariat A L'energie Atomique Et Aux Energies Non-contact user interface system
US10126933B2 (en) 2012-10-15 2018-11-13 Commissariat à l'Energie Atomique et aux Energies Alternatives Portable appliance comprising a display screen and a user interface device
JP2022053996A (ja) * 2020-09-25 2022-04-06 セイコーエプソン株式会社 電気光学装置および電子機器
JP7552197B2 (ja) 2020-09-25 2024-09-18 セイコーエプソン株式会社 電気光学装置および電子機器

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