[go: up one dir, main page]

WO2010057837A1 - Dispositif et procédé de revêtement d’un substrat au moyen de cvd - Google Patents

Dispositif et procédé de revêtement d’un substrat au moyen de cvd Download PDF

Info

Publication number
WO2010057837A1
WO2010057837A1 PCT/EP2009/065177 EP2009065177W WO2010057837A1 WO 2010057837 A1 WO2010057837 A1 WO 2010057837A1 EP 2009065177 W EP2009065177 W EP 2009065177W WO 2010057837 A1 WO2010057837 A1 WO 2010057837A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
heating
pivot arm
coating
arm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2009/065177
Other languages
German (de)
English (en)
Inventor
Martin RÜFFER
Stefan Rosiwal
Christian Bareiss
Walter Reichert
Oliver Lemmer
Marc Perle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DiaCCon GmbH
Cemecon AG
Original Assignee
DiaCCon GmbH
Cemecon AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by DiaCCon GmbH, Cemecon AG filed Critical DiaCCon GmbH
Priority to JP2011536836A priority Critical patent/JP5635524B2/ja
Priority to EP20090756295 priority patent/EP2359388B1/fr
Priority to US13/130,728 priority patent/US9127350B2/en
Priority to CN2009801552641A priority patent/CN102292795B/zh
Publication of WO2010057837A1 publication Critical patent/WO2010057837A1/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H10P72/0436—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H10P72/0431—

Definitions

  • the invention relates to a device according to the preamble of claim 1 and a method using the device.
  • Such a device is known from JP 01072992 A.
  • the heating conductors are arranged horizontally above the substrate to be coated. To generate a suitable clamping force, the heating conductors are guided over a deflection device and provided at one end with a weight.
  • the device known from the prior art has the disadvantage that the heating conductors break after only one or two coating operations and, as a result, become unusable. It is necessary in practice to replace the heating conductors after each coating operation. This requires a lot of time and money.
  • relatively thick heating conductors with a diameter of about 2 mm.
  • the use of such relatively thick heating element is also disadvantageous. Thick heating conductors, in contrast to thin heating conductors, generate a relatively large heat radiation, which undesirably acts on the substrates. Apart from that, a considerably higher electrical power is needed for heating thicker heating wires.
  • the object of the invention is to eliminate the disadvantages of the prior art.
  • a device is to be specified which enables multiple coating of substrates without replacement of the heating conductors.
  • the electrical power used should be as low as possible.
  • Another object of the invention is to provide a most efficient method for coating a substrate by means of CVD.
  • the clamping device comprises a clamping arm having a pivoting arm, attached to one end of the heating element and the other end is pivotally mounted substantially about a horizontal axis. - Surprisingly, it also succeeds in drastically increasing their durability even when using thin heating conductors.
  • a clamping force generated By the tension weight is applied according to the invention via a pivoting arm on the heating element, a clamping force generated thereby acts essentially in the direction of the longitudinal extent of the heating element.
  • the proposed device is robust, durable and reliable.
  • the device according to the invention ensures that the heating conductors are always kept taut and exact, in particular exactly parallel. Even after a large number of operating cycles, the heating conductors do not sag. Their distance from the coating substrate can always be kept reproducibly constant over a large number of coating processes.
  • the tension weight can be provided by the weight of the swing arm itself. In a particularly suen case, it may be in the pivoting arm to a tilted in the clamping direction flat metal.
  • the tension weight is at least partially formed by a pivot arm extending from the lever arm.
  • the weight of the lever arm with a suitable arrangement of the same already sufficient to produce sufficient clamping force.
  • the lever arm is additionally attached a weight.
  • the lever arm extends from the second end of the pivot arm.
  • a center of gravity of the tensioning device is located near the second end of the pivoting arm and thus near the horizontal axis.
  • the swivel arm is made of an electrically conductive metal.
  • the second end of the pivot arm may be attached or supported on the second electrode.
  • An electrical connection between the heating conductor and the second electrode may conveniently be made exclusively via the pivot arm.
  • the second end of the pivot arm is pivotally supported against a provided on the second electrode abutment.
  • the abutment can be a step, a groove, a gutter or the like. act.
  • this particularly simple embodiment for example, can be dispensed with the provision of a hinge for connecting the pivot arm with a base, in particular with the second electrode.
  • two adjacent heating conductors are formed from a single wire, the two ends of which are held on a further pivot arm provided either on the pivoting arm or on the first electrode.
  • the two ends of the wire are mounted on both sides of a pivot axis of the further pivot arm. This makes it possible to keep both adjacent heating wires stretched at the same time.
  • the heating conductors are made of a refractory metal, preferably of W, Ta, Mo, Rh or an alloy thereof.
  • the proposed materials are suitable for producing particularly thin wires and on the other hand can be exposed to high thermal stresses.
  • the heating conductors are expediently wires having a diameter in the range of 5 microns to 600 microns, preferably in the range of 100 microns to 400 microns.
  • the required electrical power for coating a substrate can be significantly reduced.
  • a high temperature of the heating conductor can be achieved, which supports the formation of atomic hydrogen.
  • the heating conductors do not necessarily have to be designed in the form of wires. It may also be that these are bands, rods or sheets. A diameter or an The cross-sectional area of the heating conductor does not have to be the same over its entire longitudinal extent.
  • a holding device for fastening the other end of the heating element is provided on the first electrode.
  • This may expediently be a device for clamping attachment of the heating element.
  • the holding device can in particular be designed such that an attachment of the heating conductor without a substantial bend of the same is possible.
  • the first and / or second electrode is made of a dispersion-strengthened copper material.
  • the proposed dispersion-strengthened copper material is extremely dimensionally stable even at high temperatures. Apart from that, workpieces, in particular profiles or hollow profiles, can be extruded from such a material simply and inexpensively and subsequently processed.
  • a cooling device for cooling the first and / or second electrode.
  • the first and / or second electrode may be formed, for example, in the form of a hollow profile, through which a cooling fluid flows.
  • the cooling fluid is expediently water.
  • the heating element array is designed as a module.
  • the first and the second electrode are fixed relative to each other, for example by means of a plate, and form a structural unit.
  • Such a unit is suitably designed so that it can be arranged in a conventional housing of a CVD coating device.
  • Heating the heating element from ambient to one
  • a pressure in the range of about 0.1 to 400 mbar is set therein.
  • the pressure during the generation of the reactive gas atmosphere is 1 to 400 mbar, preferably 3 to 20 mbar.
  • the reactive gas atmosphere expediently contains 90 to 99.5% by weight of hydrogen.
  • methane in a concentration of 0.5 to 10% by weight can be used as the carbon carrier.
  • the reactive gas atmosphere may contain a gaseous silicon carrier instead of the gaseous carbon carrier.
  • the reactive gas atmosphere may additionally contain nitrogen, oxygen, phosphorus or boron-containing gases.
  • the heating conductors are expediently at a temperature in the range of 1800 0 C to 2500 0 C, preferably 1900 ° C to
  • 1 is a schematic view of a first device
  • 2 is a schematic view of a second device
  • Fig. 3 shows the distribution of forces in a clamping device GE measure of Figs. 1 and 2 and
  • FIG. 4 shows a schematic sectional view of a CVD coating device.
  • Fig. 1 shows a schematic view of a first device.
  • a plurality of heating elements 2 are in a row next to each other, preferably with approximately the same distance, attached.
  • the heating conductors 2 can be received in a clamping manner in holding devices 3, which are provided on the first electrode 1.
  • the heating element 2 are held by individually tensioned at the end of the clamping elements 4.
  • Each of the clamping elements 4 has a pivoting arm 5, which is pivotable about a horizontal axis H.
  • At a first end of each clamping element 4 El one end of a heating element 2 is attached. From a second end E2 extending in a direction away from the first electrode 1 direction a lever arm 6.
  • the pivot arm 5 and thus firmly, z. B.
  • lever arm 6 form an acute angle, preferably in the range of 20 to 60 °.
  • a tilting moment is exerted on the pivot arm 5, which forces this in a direction away from the first electrode 1.
  • a tension force is exerted on the heating element 2.
  • the heating conductor 2 is held in a straight line between the first electrode 1 and the first end E1 of the clamping element 4. It can thus be advantageously dispensed with a sliding contact or a special, connected to the heating element 2 power supply cable.
  • the heating element 2 are arranged side by side in a substantially horizontally extending plane.
  • an abutment is referred to, in which the clamping element 4 is pivotally supported.
  • the abutment 7 may be formed in a simple case of a step against which the second end E2 of the clamping element 4 is supported.
  • the abutment 7 may for example be part of a second electrode.
  • the clamping device forms a part of the second electrode 8, which is movable relative to the first electrode 1 for clamping the heating conductor 2. Ie.
  • the heating element 2 is held stretched in a straight line by the electrodes 1, 8 which are movable relative to one another. It can thus be avoided to an undesirable bending of the heating element 2, which may be due to a sliding contact on an electrode 1, 8 or a deflection, for example.
  • the first electrode 1 is arranged approximately vertically.
  • clamping elements 4 are provided, which however are arranged one above the other in a vertical direction.
  • FIG. 3 schematically shows the distribution of forces on the clamping element 4.
  • a heating conductor 2 held in tension by means of the clamping element 4 extends between the first electrode 1 (not shown here) and the first end E1 of the clamping element 4.
  • the direction of the heating conductor 2 is determined in FIG Further referred to as "longitudinal extension". Due to the effect of the arm 6 caused weight G whose vector is directed vertically, a tilting moment is exerted on the pivot arm 5, which causes a clamping force S.
  • the vector of the clamping force S runs parallel to the longitudinal extension of the heating conductor 2.
  • the reference symbol K denotes a contact force which acts obliquely in the direction of the abutment 7.
  • FIG. 4 shows a schematic sectional view of a CVD coating device.
  • the abutments 7 are attached to a second electrode 8 configured in the form of a horizontal plate.
  • the first electrode 1 is connected to the second electrode 8 with the interposition of an electrical insulator 9.
  • Reference numeral 10 denotes a gas-tight housing which surrounds the heating conductor array.
  • a pump 11 For evacuating the housing 10, a pump 11 is provided.
  • a nozzle is designated by the optional reaction gas can be performed in the housing 10.
  • the first 1 and the second electrode 8 are connected to a current source 13 for heating the heating conductors 2.
  • the reference numeral 14 denotes a substrate which is supported for coating on the second electrode 8. LIST OF REFERENCE NUMBERS

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

L’invention concerne un dispositif de revêtement d’un substrat (14) au moyen de CVD, en particulier de revêtement avec du diamant ou du silicium, dans lequel une matrice conductrice de chaleur d’une pluralité de conducteurs de chaleur (2) s’étendant entre une première (1) et une seconde (8) électrodes est disposée dans un boîtier (10), où les conducteurs de chaleur (2) sont maintenus tendus individuellement par un module de tension amené à leur extrémité. Pour améliorer la solidité des conducteurs de chaleur (2), l’invention propose que le module de tension comprenne un bras de rotation (5) comportant un poids de tension (G) à la première extrémité (E1) duquel le conducteur de chaleur (2) est amené et dont la seconde extrémité (E2) est disposée de façon à tourner sensiblement autour d’un axe horizontal (H).
PCT/EP2009/065177 2008-11-24 2009-11-13 Dispositif et procédé de revêtement d’un substrat au moyen de cvd Ceased WO2010057837A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2011536836A JP5635524B2 (ja) 2008-11-24 2009-11-13 化学気相成長法を用いて基板をコーティングするデバイス
EP20090756295 EP2359388B1 (fr) 2008-11-24 2009-11-13 Dispositif et procédé de revêtement d un substrat au moyen de cvd
US13/130,728 US9127350B2 (en) 2008-11-24 2009-11-13 Device and method for coating a substrate using CVD
CN2009801552641A CN102292795B (zh) 2008-11-24 2009-11-13 用cvd涂敷基板的装置与方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008044025.6 2008-11-24
DE200810044025 DE102008044025A1 (de) 2008-11-24 2008-11-24 Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD

Publications (1)

Publication Number Publication Date
WO2010057837A1 true WO2010057837A1 (fr) 2010-05-27

Family

ID=41535285

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/065177 Ceased WO2010057837A1 (fr) 2008-11-24 2009-11-13 Dispositif et procédé de revêtement d’un substrat au moyen de cvd

Country Status (6)

Country Link
US (1) US9127350B2 (fr)
EP (1) EP2359388B1 (fr)
JP (1) JP5635524B2 (fr)
CN (1) CN102292795B (fr)
DE (1) DE102008044025A1 (fr)
WO (1) WO2010057837A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020104690A1 (de) 2020-02-21 2021-08-26 Pro-Beam Gmbh & Co. Kgaa Positioniervorrichtung zum Positionieren eines Werkstücks während des Schweißens sowie Verfahren zur Herstellung einer solchen

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008044025A1 (de) * 2008-11-24 2010-08-05 Cemecon Ag Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD
CN108169114B (zh) * 2017-12-29 2023-09-05 浙江大学 钢筋非均匀锈蚀辅助电极限位器自锁张紧装置
WO2020168382A1 (fr) 2019-02-19 2020-08-27 Xefco Pty Ltd Système de traitement et/ou de revêtement de substrats

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4958592A (en) * 1988-08-22 1990-09-25 General Electric Company Resistance heater for diamond production by CVD
EP0714997A1 (fr) * 1994-11-30 1996-06-05 Kodak-Pathe Procédé de fabrication de couches minces de diamant dopées de bore
US5997650A (en) * 1995-12-20 1999-12-07 Sp3, Inc. Reactor having an array of heating filaments and a filament force regulator
US6582780B1 (en) * 1999-08-30 2003-06-24 Si Diamond Technology, Inc. Substrate support for use in a hot filament chemical vapor deposition chamber
WO2008003275A1 (fr) * 2006-07-06 2008-01-10 Ecka Granulate Velden Gmbh Procédés de fabrication de pièces moulées en alliages métalliques durcis par phase dispersée

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2072518B (en) * 1980-03-28 1984-02-08 Pretorius W J Ball game apparatus
JPS6472992A (en) 1987-09-14 1989-03-17 Sumitomo Electric Industries Diamond synthesizing installation
US4970986A (en) * 1989-08-03 1990-11-20 General Electric Company Apparatus for synthetic diamond deposition including spring-tensioned filaments
JPH03120571U (fr) * 1990-03-23 1991-12-11
JPH0421777A (ja) * 1990-05-14 1992-01-24 Seiko Instr Inc ダイヤモンドの合成装置
US6427622B2 (en) * 1998-08-28 2002-08-06 Mv Systems, Inc. Hot wire chemical vapor deposition method and apparatus using graphite hot rods
TWI313059B (fr) * 2000-12-08 2009-08-01 Sony Corporatio
KR100382943B1 (ko) * 2001-02-26 2003-05-09 프리시젼다이아몬드 주식회사 고온 열 필라멘트를 이용한 기상화학다이아몬드증착장치
JP4843785B2 (ja) 2006-02-28 2011-12-21 国立大学法人東北大学 気相ダイヤモンド膜のコーティング方法及び装置
TW200809924A (en) * 2006-08-09 2008-02-16 Kinik Co Chemical vapor thin film deposition device
TW200809000A (en) * 2006-08-09 2008-02-16 Kinik Co Chemical vapor thin film deposition apparatus having vertical plating surface and power controlled heat wire
CN201095308Y (zh) * 2007-07-16 2008-08-06 郑俭余 叠翼卷藏式停车隔热车帽的自动展叠翼装置
CN201102987Y (zh) * 2007-08-28 2008-08-20 武汉工程大学 热丝恒张力悬挂装置
US8291856B2 (en) * 2008-03-07 2012-10-23 Tokyo Electron Limited Gas heating device for a vapor deposition system
DE102008044028A1 (de) * 2008-11-24 2010-08-12 Cemecon Ag Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD
DE102008044025A1 (de) * 2008-11-24 2010-08-05 Cemecon Ag Vorrichtung und Verfahren zum Beschichten eines Substrats mittels CVD
DE102009023471B4 (de) * 2009-06-02 2012-08-30 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage und -verfahren
DE102009023467B4 (de) * 2009-06-02 2011-05-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage und -verfahren
DE102009023472B4 (de) * 2009-06-02 2014-10-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Beschichtungsanlage und Beschichtungsverfahren
US8272347B2 (en) * 2009-09-14 2012-09-25 Tokyo Electron Limited High temperature gas heating device for a vapor deposition system
US8852347B2 (en) * 2010-06-11 2014-10-07 Tokyo Electron Limited Apparatus for chemical vapor deposition control
US8662941B2 (en) * 2011-05-12 2014-03-04 Applied Materials, Inc. Wire holder and terminal connector for hot wire chemical vapor deposition chamber
US20140102364A1 (en) * 2012-10-12 2014-04-17 NCD Technologies, LLC Coating apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4958592A (en) * 1988-08-22 1990-09-25 General Electric Company Resistance heater for diamond production by CVD
EP0714997A1 (fr) * 1994-11-30 1996-06-05 Kodak-Pathe Procédé de fabrication de couches minces de diamant dopées de bore
US5997650A (en) * 1995-12-20 1999-12-07 Sp3, Inc. Reactor having an array of heating filaments and a filament force regulator
US6582780B1 (en) * 1999-08-30 2003-06-24 Si Diamond Technology, Inc. Substrate support for use in a hot filament chemical vapor deposition chamber
WO2008003275A1 (fr) * 2006-07-06 2008-01-10 Ecka Granulate Velden Gmbh Procédés de fabrication de pièces moulées en alliages métalliques durcis par phase dispersée

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020104690A1 (de) 2020-02-21 2021-08-26 Pro-Beam Gmbh & Co. Kgaa Positioniervorrichtung zum Positionieren eines Werkstücks während des Schweißens sowie Verfahren zur Herstellung einer solchen

Also Published As

Publication number Publication date
JP5635524B2 (ja) 2014-12-03
DE102008044025A1 (de) 2010-08-05
CN102292795A (zh) 2011-12-21
EP2359388B1 (fr) 2013-07-31
US9127350B2 (en) 2015-09-08
US20110287192A1 (en) 2011-11-24
JP2012509826A (ja) 2012-04-26
EP2359388A1 (fr) 2011-08-24
CN102292795B (zh) 2013-12-04

Similar Documents

Publication Publication Date Title
DE69009893T2 (de) Vorrichtung zur Abscheidung von synthetischem Diamant, die unter Federdruck stehende Drähte enthält.
DE69127609T2 (de) Vorrichtung und verfahren zur herstellung von diamanten
DE69815348T2 (de) Vorrichtung und verfahren zur keimbildung und abscheidung von diamant mittels heissdraht-dc-plasma
EP2359388B1 (fr) Dispositif et procédé de revêtement d un substrat au moyen de cvd
DE69009915T2 (de) Vorrichtung zur synthetischen Diamantherstellung mit gebogenen Filamenten und Substratkühlungseinrichtung.
DE60015725T2 (de) Erzeugung von Werkstoffen
EP0432528B1 (fr) Procédé pour la production de couches en carbone dur et appareillage pour sa réalisation
DE1931412A1 (de) Duennschichtwiderstaende und Verfahren zu ihrer Herstellung
DE10101040A1 (de) Vorrichtung und Verfahren zur Herstellung eines polykristallinen Siliciumstabes
EP2361322B1 (fr) Dispositif et procédé pour revêtir un substrat par dépôt chimique en phase vapeur
EP2438206B1 (fr) Installation et procédé de revêtement
DE102004025669A1 (de) Funktionelle CVD-Diamantschichten auf großflächigen Substraten
DE60201176T2 (de) Verfahren zur bildung einer kohlenstoffnanoröhren enthaltenden beschichtung auf einem substrat
DE102005057276B3 (de) Absorberrohr
EP2699711B1 (fr) Procédé à fil chaud pour le dépôt de matériau semi-conducteur sur un substrat et dispositif de mise en oeuvre de ce procédé
DE102023136630B3 (de) Kontakteinrichtung, Heizleiterhalter, Vorrichtung sowie Verfahren zum Beschichten eines Substrats mittels CVD
DE102009023467B4 (de) Beschichtungsanlage und -verfahren
DE3208086C2 (de) Verwendung einer Plasmakanone
CN216663228U (zh) 一种热丝加热装置及热丝化学气相沉积设备
WO2008006688A1 (fr) Conducteur de courant fort, en particulier pour un four à arc électrique ainsi que procédé pour la conception d'un conducteur de courant fort
DE1614656C3 (de) Verfahren zum Verlöten der Gitter draYitetiocribelasfbarerKreuzspanngitter fur elektrische Entladungsgefäß
DE19654250A1 (de) Verfahren und Vorrichtung zum Herstellen oxidationsempfindlicher Lötverbindunden
DE19630134A1 (de) Fügeverfahren für Elektronik- und Elektrotechnik-Baugruppen
DE10256693A1 (de) Verfahren und Vorrichtung zur Oberflächenmodifizierung und zum Bonden von Halbleitersubstraten mittels atmosphärischer Plasmabehandlung
DE2223868A1 (de) Verfahren und vorrichtung zum herstellen von aus halbleitermaterial bestehenden hohlkoerpern, insbesondere von siliciumrohren

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200980155264.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09756295

Country of ref document: EP

Kind code of ref document: A1

DPE2 Request for preliminary examination filed before expiration of 19th month from priority date (pct application filed from 20040101)
WWE Wipo information: entry into national phase

Ref document number: 2011536836

Country of ref document: JP

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2009756295

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 13130728

Country of ref document: US