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WO2010049158A3 - Dispositif vhf - Google Patents

Dispositif vhf Download PDF

Info

Publication number
WO2010049158A3
WO2010049158A3 PCT/EP2009/007759 EP2009007759W WO2010049158A3 WO 2010049158 A3 WO2010049158 A3 WO 2010049158A3 EP 2009007759 W EP2009007759 W EP 2009007759W WO 2010049158 A3 WO2010049158 A3 WO 2010049158A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
vhf
vicinity
coupled
front face
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/EP2009/007759
Other languages
German (de)
English (en)
Other versions
WO2010049158A2 (fr
Inventor
Michael Geisler
Thomas Merz
Rudolf Beckmann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Buehler Alzenau GmbH
Original Assignee
Leybold Optics GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leybold Optics GmbH filed Critical Leybold Optics GmbH
Priority to JP2011533610A priority Critical patent/JP2012507126A/ja
Priority to EP09759655A priority patent/EP2347427A2/fr
Publication of WO2010049158A2 publication Critical patent/WO2010049158A2/fr
Publication of WO2010049158A3 publication Critical patent/WO2010049158A3/fr
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32018—Glow discharge
    • H01J37/32036—AC powered
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32577—Electrical connecting means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne une électrode plasma VHF comportant un corps d'électrode allongé de préférence conçu sous forme de prisme, présentant une surface d'électrode connectée ou pouvant être connectée électriquement à au moins deux éléments de liaison pour l'amenée de puissance électrique. Au moins un premier élément de liaison est accouplé à un premier côté frontal ou à proximité de celui-ci, et au moins un deuxième élément de liaison est accouplé à un deuxième côté frontal du corps d'électrode ou à proximité de celui-ci, et l'électrode est de préférence disposée dans un composant d'intégration libérant la surface d'électrode, réalisé dans un matériau diélectrique. Un élément de blindage libérant la surface d'électrode est de préférence prévu, l'élément de blindage renfermant l'électrode et le composant d'intégration. L'électrode plasma VHF selon l'invention est caractérisée en ce qu'au moins un des éléments de liaison est conçu en tant qu'élément de guidage VHF à vide.
PCT/EP2009/007759 2008-10-29 2009-10-29 Dispositif vhf Ceased WO2010049158A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2011533610A JP2012507126A (ja) 2008-10-29 2009-10-29 Ｖｈｆ装置
EP09759655A EP2347427A2 (fr) 2008-10-29 2009-10-29 Dispositif vhf

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE102008053703.9 2008-10-29
DE102008053703 2008-10-29
DE102008054144.3 2008-10-31
DE102008054144 2008-10-31
DE102009014414A DE102009014414A1 (de) 2008-10-29 2009-03-26 VHF-Elektrodenanordnung, Vorrichtung und Verfahren
DE102009014414.5 2009-03-26

Publications (2)

Publication Number Publication Date
WO2010049158A2 WO2010049158A2 (fr) 2010-05-06
WO2010049158A3 true WO2010049158A3 (fr) 2010-07-01

Family

ID=42096556

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/007759 Ceased WO2010049158A2 (fr) 2008-10-29 2009-10-29 Dispositif vhf

Country Status (5)

Country Link
EP (1) EP2347427A2 (fr)
JP (1) JP2012507126A (fr)
DE (1) DE102009014414A1 (fr)
TW (1) TW201024453A (fr)
WO (1) WO2010049158A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11126775B2 (en) * 2019-04-12 2021-09-21 Taiwan Semiconductor Manufacturing Company, Ltd. IC layout, method, device, and system
DE102020109326B4 (de) * 2019-04-12 2024-07-25 Taiwan Semiconductor Manufacturing Co. Ltd. Ic-vorrichtung, verfahren zum herstellen und verfahren zum herstellen eines layout-diagramms

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4421103A1 (de) * 1994-06-16 1995-12-21 Siemens Solar Gmbh Verfahren und Vorrichtung zur plasmagestützten Abscheidung dünner Schichten
US20050022740A1 (en) * 2003-07-30 2005-02-03 Sharp Kabushiki Kaisha Plasma processing system and cleaning method for the same
EP1548150A1 (fr) * 2002-10-01 2005-06-29 Mitsubishi Heavy Industries Systeme de traitement au plasma et son procede de traitement de substrat, systeme de depot chimique en phase vapeur ameliore active par plasma et son procede de depot de film
JP2008047938A (ja) * 2007-10-17 2008-02-28 Masayoshi Murata 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法。

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3253122B2 (ja) * 1992-04-01 2002-02-04 キヤノン株式会社 プラズマ処理装置及びプラズマ処理方法並びにそれを用いた半導体デバイスの製造方法
JP2002105643A (ja) * 2000-10-04 2002-04-10 Mitsubishi Heavy Ind Ltd プラズマｃｖｄ装置用電極接続具
JP3590955B2 (ja) * 2004-05-26 2004-11-17 村田 正義 平衡伝送回路と、該平衡伝送回路により構成されたプラズマ表面処理装置およびプラズマ表面処理方法
JP4625397B2 (ja) * 2005-10-18 2011-02-02 三菱重工業株式会社 放電電極、薄膜製造装置及び太陽電池の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4421103A1 (de) * 1994-06-16 1995-12-21 Siemens Solar Gmbh Verfahren und Vorrichtung zur plasmagestützten Abscheidung dünner Schichten
EP1548150A1 (fr) * 2002-10-01 2005-06-29 Mitsubishi Heavy Industries Systeme de traitement au plasma et son procede de traitement de substrat, systeme de depot chimique en phase vapeur ameliore active par plasma et son procede de depot de film
US20050022740A1 (en) * 2003-07-30 2005-02-03 Sharp Kabushiki Kaisha Plasma processing system and cleaning method for the same
JP2008047938A (ja) * 2007-10-17 2008-02-28 Masayoshi Murata 高周波プラズマｃｖｄ装置と高周波プラズマｃｖｄ法及び半導体薄膜製造法。

Also Published As

Publication number Publication date
JP2012507126A (ja) 2012-03-22
WO2010049158A2 (fr) 2010-05-06
TW201024453A (en) 2010-07-01
EP2347427A2 (fr) 2011-07-27
DE102009014414A1 (de) 2010-05-12

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